WO2020155564A1 - 一种oled显示面板及其制作方法 - Google Patents

一种oled显示面板及其制作方法 Download PDF

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Publication number
WO2020155564A1
WO2020155564A1 PCT/CN2019/095500 CN2019095500W WO2020155564A1 WO 2020155564 A1 WO2020155564 A1 WO 2020155564A1 CN 2019095500 W CN2019095500 W CN 2019095500W WO 2020155564 A1 WO2020155564 A1 WO 2020155564A1
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Prior art keywords
layer
organic
light transmission
light
substrate
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English (en)
French (fr)
Inventor
倪晶
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/622,951 priority Critical patent/US11355566B2/en
Publication of WO2020155564A1 publication Critical patent/WO2020155564A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • the present invention relates to the technical field of display panels, in particular to an OLED display panel and a manufacturing method thereof.
  • OLEDs Organic light-emitting diodes
  • OLED flat panel can be made lighter and thinner, so more and more mobile phone manufacturers choose OLED panel as display screen.
  • Full-screen mobile phones have a stronger sense of visual experience for users because they enhance the appearance and sense of technology of mobile phones, and are therefore the direction pursued by many manufacturers.
  • the real screen-to-body ratio of most mobile phones on the market is uneven. Of which O-cut Because of its relatively high screen-to-body ratio and small impact on the visual screen, screen products are currently more promising designs.
  • O-cut screen mobile phones need to leave a light path for the under-screen camera.
  • the camera is located on the back of the OLED substrate, and natural light passes through the OLED device to excite the camera's sensor, so that the camera can recognize the portrait and display the picture. Since natural light passes through the OLED device, especially the reflective anode, translucent cathode, and PI layer with low transmittance, a lot of light must be lost, resulting in poor light uptake by the under-screen camera.
  • the embodiment of the present invention provides an OLED display panel and a manufacturing method thereof, so as to solve the problem that the poor light transmittance of the existing OLED causes the poor light intake of electronic components under the screen.
  • the embodiment of the present invention provides an OLED display panel, which includes an organic film layer, an array layer, an organic light-emitting layer, and an encapsulation layer provided on the organic light-emitting layer;
  • the organic film layer is provided with a first opening, and the first opening is filled with a light-transmitting material to form a light transmission layer; the side of the organic film layer away from the encapsulation layer is provided with the light The position of the transparent layer corresponds to the electronic component area.
  • second openings are correspondingly provided on the array layer and the organic light-emitting layer, and the second openings correspond to the positions of the light transmission layer;
  • the encapsulation layer is disposed on the surface of the organic light emitting layer and fills the second opening so as to be in contact with the light transmission layer.
  • the encapsulation layer includes a first inorganic layer, an organic layer and a second inorganic layer;
  • the first inorganic layer is provided on the surface of the organic light-emitting layer and the light transmission layer at the bottom of the second opening; the organic layer is provided on the surface of the first inorganic layer and fills the second opening; The second inorganic layer is provided on the surface of the organic layer.
  • a substrate film layer is further provided between the organic film layer and the electronic component area.
  • a substrate film layer is further provided on the side of the organic film layer away from the encapsulation layer, and the electronic component area is a third opening provided in the substrate film layer.
  • the light transmission layer is a cylinder or a polyhedron with an isosceles trapezoid in a longitudinal section, and the light transmission material is transparent glass.
  • the material of the organic film layer includes any one of polyimide and polyethylene terephthalate.
  • the embodiment of the present invention also provides a manufacturing method of an OLED display panel, including:
  • the substrate is removed; the side of the organic film layer away from the encapsulation layer is provided with an electronic component area corresponding to the position of the light transmission layer.
  • the forming a light transmission layer on the substrate and forming an organic film layer on the substrate around the light transmission layer specifically includes:
  • An organic film layer is formed on the substrate around the light transmission layer; the thickness of the organic film layer is not greater than the sum of the thicknesses of the first sacrificial layer and the light transmission layer.
  • the adhesion force between the barrier layer and the second sacrificial layer is greater than the adhesion force between the second sacrificial layer and the light transmission layer; the second sacrificial layer and the The adhesion force between the light transmission layers is greater than the adhesion force between the first sacrificial layer and the substrate.
  • the light transmission layer is a cylinder or a polyhedron with an isosceles trapezoid in its longitudinal section;
  • the barrier layer is a polyhedron with an inverted trapezoid in its longitudinal section.
  • the light-transmitting material is transparent glass
  • the material of the barrier layer is transparent glass
  • the material of the first sacrificial layer and the second sacrificial layer is transparent conductive oxide.
  • the step of sequentially forming an array layer, an organic light-emitting layer, and an encapsulation layer on the organic film layer specifically includes:
  • An encapsulation layer is formed on the organic light emitting layer, and the encapsulation layer fills the second opening so as to be in contact with the light transmission layer.
  • the method further includes:
  • a substrate film layer is formed on the side of the organic film layer away from the encapsulation layer, and a third opening is opened on the substrate film layer to use the third opening as the electronic component area.
  • the beneficial effects of the present invention are: a first opening is provided in the organic film layer, and a light-transmitting material is filled in the first opening to form a light-transmitting layer, and electronic components are provided at the bottom of the panel at a position corresponding to the light-transmitting layer Area, can avoid a large amount of light loss, effectively enhance OLED penetration, increase the light intake of electronic components under the screen; avoid the use of laser cutting during the production of OLED display panels, and reduce the damage caused by laser cutting.
  • FIG. 1 is a schematic structural diagram of an OLED display panel provided by an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of another structure of an OLED display panel provided by an embodiment of the present invention.
  • FIG. 3 is a schematic flowchart of a method for manufacturing an OLED display panel provided by an embodiment of the present invention
  • step 102 is a partial schematic diagram of step 102 in the manufacturing method of the OLED display panel provided by the embodiment of the present invention.
  • step 102 is another partial schematic diagram of step 102 in the manufacturing method of the OLED display panel provided by the embodiment of the present invention.
  • step 103 is a partial schematic diagram of step 103 in the manufacturing method of the OLED display panel provided by the embodiment of the present invention.
  • step 103 is another partial schematic diagram of step 103 in the manufacturing method of the OLED display panel provided by the embodiment of the present invention.
  • FIG. 8 is another partial schematic diagram of step 103 in the manufacturing method of the OLED display panel provided by the embodiment of the present invention.
  • FIG. 9 is a schematic diagram of step 104 in the manufacturing method of the OLED display panel provided by the embodiment of the present invention.
  • FIG. 1 it is a schematic structural diagram of an OLED display panel provided by an embodiment of the present invention.
  • the OLED display panel provided in this embodiment includes an organic film layer 110, an array layer 120, and an organic light-emitting layer 130 that are stacked and disposed, and an encapsulation layer 180 disposed on the organic light-emitting layer 130.
  • the organic film layer 110 can be prepared by coating, suspension coating, etc.
  • the material of the organic film layer 110 includes but not limited to polyimide (PI), polyethylene terephthalate (PET), etc. ⁇ Material.
  • the array layer 120 includes film layers such as TFT, which can be prepared by CVD (Chemical Vapor Deposition), coating, exposure, etching, and the like.
  • the organic light emitting layer 130 includes composite film layers such as an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer, which can be prepared by evaporation equipment.
  • the encapsulation layer 180 includes multiple organic layers and inorganic layers for isolating water and oxygen.
  • the organic film layer 110 is provided with a first opening 111, the first opening 111 is filled with a light-transmitting material, and the filled light-transmitting material forms the light-transmitting layer 102; the organic film layer 110 is far away from the encapsulation layer 180
  • An electronic component area 171 corresponding to the position of the light-transmitting layer 102 is provided on one side.
  • the light-transmitting material of the light-transmitting layer 102 is transparent glass.
  • the light-transmitting layer 102 can be prepared by using glass powder and 3D printing.
  • the light-transmitting layer 102 can be a cylinder or a polyhedron with an isosceles trapezoid in longitudinal section.
  • the electronic component area 171 is used for placing sensor components. In this embodiment, the electronic component area and the light transmission layer are arranged correspondingly, which effectively enhances the penetration of the OLED, and increases the light intake of the electronic component (such as a camera) under the screen.
  • the array layer 120 and the organic light emitting layer 130 are provided with second openings 121 correspondingly, and the second openings 121 correspond to the positions of the light transmission layer 102.
  • the second opening 121 penetrates the array layer 120 and the organic light emitting layer 130 and corresponds to the position of the light transmission layer 101, that is, the second opening 121 corresponds to the position of the electronic element area 171.
  • the encapsulation layer 180 is disposed on the surface of the organic light-emitting layer 130 and fills the second opening 121 to contact the light transmission layer 102, that is, the second opening 121 is filled with the material of the encapsulation layer 180,
  • the area corresponding to the position of the electronic component area 171 is only provided with the light transmission layer 102 and the encapsulation layer 180, while the film layer with poor light transmission rate is located in other positions, which further enhances the penetration of the OLED and improves the electronic components under the screen. Light intake.
  • the encapsulation layer 180 includes a first inorganic layer 140, an organic layer 150 and a second inorganic layer 160.
  • the first inorganic layer 140 can be deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition), PLD (Pulsed Laser Deposition, pulsed laser deposition) or sputtering (Sputter), with a thickness of 0.01 Between ⁇ 1um, the material of the first inorganic layer 140 includes but is not limited to Al2O3, TiO2, SiNx, SiCNx, SiOx, ZrO2 and other inorganic functional materials used to increase water blocking and oxygen functions.
  • the organic layer 150 can be deposited by inkjet printing (IJP).
  • the material of the organic layer 150 includes, but is not limited to, hexamethyldimethicone (HMDSO), acrylate (Acrylate), polyacrylates, and polycarbonate.
  • Organic transparent materials such as polystyrene and polystyrene.
  • the second inorganic layer 160 can be deposited by PECVD, PLD or sputtering, and the thickness is between 0.01 and 1um.
  • the material of the second inorganic layer 160 includes but is not limited to Al2O3, TiO2, SiNx, SiCNx, SiOx, ZrO2, etc. It is an inorganic functional material that increases water blocking and oxygen functions.
  • the first inorganic layer 140 is provided on the surface of the organic light emitting layer 130 and the light transmission layer 102 at the bottom of the second opening 121; the organic layer 150 is provided on the surface of the first inorganic layer 140 and is filled The second opening 121; the second inorganic layer 160 is provided on the surface of the organic layer 150.
  • the organic film layer 110 is further provided with a substrate film layer 170 on the side away from the encapsulation layer 180, and the electronic component area 171 is provided on the substrate.
  • the third opening in the base film layer 170 corresponds to the position of the light transmission layer 102.
  • the substrate film layer 170 includes a composite film layer such as a bottom module.
  • a substrate film layer 170 is further provided between the organic film layer 110 and the electronic element region 171, and the electronic element region 171 is provided on the substrate film layer 170. A side away from the organic film layer 110.
  • a first opening is provided in the organic film layer, and a light-transmitting material is filled in the first opening to form a light-transmitting layer.
  • the bottom of the panel is opposite to the light-transmitting layer. Setting the electronic component area at the corresponding position can avoid a large amount of light loss, effectively enhance the penetration of the OLED, and increase the light intake of the sensor under the screen.
  • FIG. 3 is a schematic flowchart of a manufacturing method of an OLED display panel provided by an embodiment of the present invention.
  • the substrate is a glass substrate.
  • a light transmission layer is formed on the substrate first, and then an organic film layer is formed on the substrate, so that the light transmission layer and the organic film layer are located on one side of the substrate together, and the organic film layer is located on the light transmission layer Around.
  • step 102 includes:
  • An organic film layer is formed on the substrate around the light transmission layer; the thickness of the organic film layer is not greater than the sum of the thicknesses of the first sacrificial layer and the light transmission layer.
  • a first sacrificial layer 101, a light transmission layer 102, a second sacrificial layer 103, and a barrier layer 104 are sequentially formed on the substrate 100.
  • the first sacrificial layer 101 is located on the substrate 100
  • the light transmitting layer 102 is located on the side of the first sacrificial layer 101 away from the substrate 100
  • the second sacrificial layer 103 is located on the side of the light transmitting layer 102 away from the first sacrificial layer 101
  • the barrier layer 104 is located on the side of the second sacrificial layer 103 away from the light transmission layer 102.
  • the light transmission layer 102 and the barrier layer 104 are both transparent glass materials, and can be obtained by using glass powder and 3D printing.
  • the thickness of the light transmission layer 102 and the barrier layer 104 are both 10-20um.
  • the light transmission layer 102 may be a cylinder or a polyhedron with an isosceles trapezoid in longitudinal section
  • the barrier layer 104 may be a polyhedron with an inverted trapezoid in longitudinal section, and the included angle between the longer base and the hypotenuse of the inverted trapezoid is less than 60 °, the film layer in the subsequent process can be separated by the barrier layer 104.
  • the materials of the first sacrificial layer 101 and the second sacrificial layer 103 are both transparent conductive oxides, and the materials can be AZO, ITO, IZO, etc., which are obtained by deposition through PVD or sputtering. It should be noted that the characteristic of the transparent conductive oxide is that the surface roughness can be adjusted. Therefore, the first sacrificial layer 101 and the second sacrificial layer 103 of different thicknesses can be deposited to correspondingly obtain the first sacrificial layer 101 and the second sacrificial layer 101 and the second sacrificial layer with different roughness.
  • Two sacrificial layers 103 to adjust the adhesion between the first sacrificial layer 101 and the substrate 100 and the adhesion between the second sacrificial layer 103 and the light transmission layer 102.
  • the adhesion force between the barrier layer 104 and the second sacrificial layer 103 is greater than the adhesion force between the second sacrificial layer 103 and the light transmission layer 102;
  • the adhesion force between the second sacrificial layer 103 and the light transmission layer 102 is greater than the adhesion force between the first sacrificial layer 101 and the substrate 100.
  • an organic film layer 110 is formed on the substrate 100 around the light transmission layer 102, and the organic film layer 110 can be prepared by coating, suspension coating, or the like.
  • the material of the organic film layer 110 includes, but is not limited to, polymer materials such as polyimide (PI) and polyethylene terephthalate (PET).
  • PI polyimide
  • PET polyethylene terephthalate
  • the thickness of the organic film layer 110 shall not exceed the sum of the thicknesses of the first sacrificial layer 101 and the light transmission layer 102, that is, the upper surface of the organic film layer 110 is flush or slightly lower (not greater than 0.5um) on the light transmission layer 102 The upper surface.
  • An array layer, an organic light-emitting layer, and an encapsulation layer are sequentially formed on the organic film layer.
  • the array layer is located on the side of the organic film layer away from the substrate
  • the organic light emitting layer is located on the side of the array layer away from the substrate
  • the packaging layer is located on the side of the organic light emitting layer away from the substrate.
  • step 103 includes:
  • An encapsulation layer is formed on the organic light emitting layer, and the encapsulation layer fills the second opening so as to be in contact with the light transmission layer.
  • the array layer 120 is formed on the organic film layer 110 first, and then the organic light emitting layer 130 is formed on the array layer 120.
  • the array layer 120 includes film layers such as TFT, which can be prepared by CVD, coating, exposure, etching and other methods.
  • the organic light emitting layer 130 includes composite film layers such as an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer, which can be prepared by evaporation equipment.
  • the organic light emitting layer 130 may also include an inorganic encapsulation layer after evaporation.
  • the upper surface of the organic light emitting layer 130 corresponding to the organic film layer 110 is lower than the upper surface of the barrier layer 104, so that the array layer 120 corresponding to the organic film layer 110 and the organic light emitting layer 130 correspond to the array layer 120 corresponding to the barrier layer 104, respectively. It is separated from the organic light emitting layer 130.
  • the second sacrificial layer 103, the barrier layer 104, and the array layer 120 and the organic light emitting layer 130 corresponding to the barrier layer 104 are peeled off by mechanical peeling, so as to expose the light transmission layer 102. After peeling, as shown in FIG. 7, a second opening 121 is formed in the array layer 120 and the organic light-emitting layer 130 corresponding to the organic film layer 110.
  • the encapsulation layer includes a first inorganic layer 140, an organic layer 150 and a second inorganic layer 160.
  • a first inorganic layer 140 is formed on the surface of the remaining organic light emitting layer 130 and the light transmission layer 102 at the bottom of the second opening 121.
  • An organic layer 150 is formed on the surface of the first inorganic layer 140, and the organic layer 150 fills the second opening 121, and then a second inorganic layer 160 is formed on the surface of the organic layer 150.
  • the first inorganic layer 140 can be deposited by PECVD, PLD or sputtering, and the thickness is between 0.01 ⁇ 1um.
  • the material of the first inorganic layer 140 includes but not limited to Al2O3, TiO2, SiNx, SiCNx, SiOx, ZrO2 Inorganic functional materials used to increase water blocking and oxygen functions.
  • the organic layer 150 can be deposited by IJP.
  • the material of the organic layer 150 includes, but is not limited to, organic transparent materials such as HMDSO, Acrylate, polyacrylate, polycarbonate, and polystyrene.
  • the second inorganic layer 160 can be deposited by PECVD, PLD or Sputter, and the thickness is between 0.01 and 1um.
  • the material of the second inorganic layer 160 includes but is not limited to Al2O3, TiO2, SiNx, SiCNx, SiOx, ZrO2, etc. Inorganic functional materials with water blocking and oxygen functions.
  • step 105 includes:
  • the substrate and the first sacrificial layer are removed by mechanical peeling to expose the light transmission layer and the organic film layer.
  • the substrate 100 and the first sacrificial layer 101 are peeled off by mechanical peeling to expose the light transmitting layer 102 and the organic film layer 110.
  • an electronic component area (not shown in FIG. 9) is provided on the side of the organic film layer 110 away from the encapsulation layer, and the electronic component area is set corresponding to the light transmission layer, which effectively enhances the penetration of the OLED and improves the under-screen The light uptake of the sensor.
  • the method further includes:
  • a substrate film layer is formed on the side of the organic film layer away from the encapsulation layer, and a third opening is opened on the substrate film layer to use the third opening as the electronic component area.
  • a base film layer 170 is formed on the side of the light transmission layer 102 and the organic film layer 110 away from the encapsulation layer.
  • the base film layer 170 is a composite film layer such as a bottom module.
  • the electronic element area 171 may be a third opening opened on the substrate film layer 170.
  • the electronic element area 171 may also be provided on a portion of the substrate film layer 170 away from the organic film layer 110. side. The film with a lower penetration rate above the electronic component area has been removed, so that when a sensor element (such as a camera sensor) is placed in the electronic component area 171, the loss rate of light passing through the film to the sensor element is greatly reduced.
  • a sensor element such as a camera sensor
  • a first opening is provided in the organic film layer, and a light-transmitting material is filled in the first opening to form a light-transmitting layer, which is transparent to light at the bottom of the panel.
  • the electronic component area is set at the corresponding position of the layer, which can avoid a large amount of light loss, effectively enhance the penetration of OLED, and increase the light intake of the sensor under the screen; avoid the use of laser cutting in the production process of OLED display panel, and reduce the amount of laser cutting. The damage caused.

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Abstract

一种OLED显示面板及其制作方法，该OLED显示面板包括层叠设置的有机膜层(110)、阵列层(120)和有机发光层(130)以及设于所述有机发光层(130)上的封装层(180)；所述有机膜层(110)中设有第一开口(111)，所述第一开口(111)中填充有透光材料，以形成光透过层(102)；所述有机膜层(110)远离所述封装层(180)的一侧设有与所述光透过层(102)的位置相对应的电子元件区(171)。

Description

一种OLED显示面板及其制作方法 技术领域
本发明涉及显示面板技术领域，尤其涉及一种OLED显示面板及其制作方法。
 背景技术
有机发光二极管（OLED）因其在固态照明和平板显示的方向拥有巨大的发展潜力而得到了学术界和产业界的极大关注。OLED平板可以做的更轻更薄，因此越来越多的手机厂商选择了OLED面板作为显示屏。全面屏手机由于提升手机的颜值和科技感，对于用户而言也有着更强的视觉体验感，因而是众多厂商所追求的方向。然而由于受限于目前的技术，大多数市面上的手机真实屏占比参差不齐。其中O-cut 屏产品由于其相对较高的屏占比，且在视觉画面上影响较小，因此是当前比较有潜力的设计。
目前O-cut 屏手机需要为屏下摄像头留出光线路径。摄像头位于OLED 衬底背面，自然光透过OLED 器件激发摄像头的传感器，使得摄像头能够识别人像，从而显示画面。由于自然光穿过OLED器件，尤其是具有反射功能的阳极、半透明的阴极以及穿透率较低的PI层，务必会损失很多光线，导致屏下摄像头的光摄取量较差。
 技术问题
本发明实施例提供一种OLED显示面板及其制作方法，以解决现有OLED光透过率较差导致屏下电子元件的光摄取量较差的问题。
 技术解决方案
本发明实施例提供了一种OLED显示面板，包括层叠设置的有机膜层、阵列层和有机发光层以及设于所述有机发光层上的封装层；
所述有机膜层中设有第一开口，所述第一开口中填充有透光材料，以形成光透过层；所述有机膜层远离所述封装层的一侧设有与所述光透过层的位置相对应的电子元件区。
进一步地，所述阵列层和所述有机发光层上对应设有第二开口，且所述第二开口与所述光透过层的位置相对应；
所述封装层设于所述有机发光层的表面并填充所述第二开口，以与所述光透过层接触。
进一步地，所述封装层包括第一无机层、有机层和第二无机层；
所述第一无机层设于所述有机发光层和所述第二开口底部的光透过层的表面；所述有机层设于所述第一无机层的表面并填充所述第二开口；所述第二无机层设于所述有机层的表面。
在一个具体的实施方式中，所述有机膜层与所述电子元件区之间还设有衬底膜层。
在另一个具体的实施方式中，所述有机膜层远离所述封装层的一侧还设有衬底膜层，所述电子元件区是设于所述衬底膜层中的第三开口。
进一步地，所述光透过层呈圆柱体或纵截面为等腰梯形的多面体，所述透光材料为透明玻璃。
进一步地，所述有机膜层的材质包括聚酰亚胺和聚对苯二甲酸乙二醇酯中的任意一种。
本发明实施例还提供了一种OLED显示面板的制作方法，包括：
提供基板；
在所述基板上形成光透过层，并在所述光透过层周围的基板上形成有机膜层；
在所述有机膜层上依次形成阵列层、有机发光层和封装层；
去除所述基板；所述有机膜层远离所述封装层的一侧设有与所述光透过层的位置相对应的电子元件区。
进一步地，所述在所述基板上形成光透过层，并在所述光透过层周围的基板上形成有机膜层，具体包括：
在所述基板上依次形成第一牺牲层、光透过层、第二牺牲层和阻隔层；
在所述光透过层周围的基板上形成有机膜层；所述有机膜层的厚度不大于所述第一牺牲层与所述光透过层的厚度之和。
进一步地，所述阻隔层与所述第二牺牲层之间的粘附力大于所述第二牺牲层与所述光透过层之间的粘附力；所述第二牺牲层与所述光透过层之间的粘附力大于所述第一牺牲层与所述基板之间的粘附力。
进一步地，所述光透过层呈圆柱体或纵截面为等腰梯形的多面体；所述阻隔层呈纵截面为倒梯形的多面体。
进一步地，所述透光材料为透明玻璃，所述阻隔层的材质为透明玻璃，所述第一牺牲层和所述第二牺牲层的材质为透明导电氧化物。
进一步地，所述在所述有机膜层上依次形成阵列层、有机发光层和封装层，具体包括：
在所述有机膜层上依次形成阵列层和有机发光层；
采用机械剥离的方式去除所述第二牺牲层，以在所述阵列层和有机发光层中形成第二开口；
在所述有机发光层上形成封装层，并使所述封装层填充所述第二开口，以与所述光透过层接触。
进一步地，在所述去除所述基板之后，还包括：
在所述有机膜层远离所述封装层的一侧形成衬底膜层，并在所述衬底膜层上开设第三开口，以将所述第三开口作为所述电子元件区。
 有益效果
本发明的有益效果为：在有机膜层中设置第一开口，并在第一开口中填充透光材料，形成光透过层，在面板底部与光透过层的相对应的位置设置电子元件区，能够避免大量光线损失，有效增强OLED穿透度，提高屏下电子元件的光摄取量；OLED显示面板制作过程中避免使用激光镭射切割，减少由于激光镭射切割带来的损害。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的OLED显示面板的一结构示意图；
图2为本发明实施例提供的OLED显示面板的另一结构示意图；
图3为本发明实施例提供的OLED显示面板的制作方法的流程示意图；
图4为本发明实施例提供的OLED显示面板的制作方法中步骤102的部分示意图；
图5为本发明实施例提供的OLED显示面板的制作方法中步骤102的另一部分示意图；
图6为本发明实施例提供的OLED显示面板的制作方法中步骤103的部分示意图；
图7为本发明实施例提供的OLED显示面板的制作方法中步骤103的另一部分示意图；
图8为本发明实施例提供的OLED显示面板的制作方法中步骤103的又一部分示意图；
图9为本发明实施例提供的OLED显示面板的制作方法中步骤104的示意图。
 本发明的实施方式
以下参考说明书附图介绍本发明的优选实施例，用以举例证明本发明可以实施，这些实施例可以向本领域中的技术人员完整介绍本发明的技术内容，使得本发明的技术内容更加清楚和便于理解。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
本发明说明书中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。
参见图1，是本发明实施例提供的OLED显示面板的结构示意图。
本实施例提供的OLED显示面板包括层叠设置的有机膜层110、阵列层120和有机发光层130以及设于所述有机发光层130上的封装层180。其中，有机膜层110可通过涂布、悬涂等方式进行制备，有机膜层110的材料包括但不限于聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)等聚合物材料。阵列层120包括TFT等膜层，可通过CVD(Chemical Vapor Deposition, 化学气相沉积)、涂布、曝光、蚀刻等方式制备。有机发光层130包括电子注入层、电子传输层、发光层、空穴传输层、空穴注入层等复合膜层，可通过蒸镀设备进行制备。封装层180包括多层有机层和无机层，用于隔绝水氧。
有机膜层110中设有第一开口111，所述第一开口111中填充有透光材料，且填充的透光材料形成光透过层102；所述有机膜层110远离所述封装层180的一侧设有与所述光透过层102的位置相对应的电子元件区171。其中，光透过层102的透光材料为透明玻璃，可采用玻璃粉并通过3D打印方式制备光透过层102，光透过层102可呈圆柱体或纵截面为等腰梯形的多面体。电子元件区171用于放置传感器元件。本实施例将电子元件区与光透过层对应设置，有效增强OLED穿透度，提高屏下电子元件（例如摄像头）的光摄取量。
进一步地，如图1所示，所述阵列层120和所述有机发光层130上对应设有第二开口121，且所述第二开口121与所述光透过层102的位置相对应。其中，第二开口121贯穿阵列层120和有机发光层130，且与光透过层101的位置相对应，即第二开口121与电子元件区171的位置相对应。
所述封装层180设于所述有机发光层130的表面并填充所述第二开口121，以与所述光透过层102接触，即第二开口121中填充的是封装层180的材料，使得与电子元件区171位置相对应的区域仅设有光透过层102和封装层180，而光透过率差的膜层位于其他位置，进一步增强OLED穿透度，提高屏下电子元件的光摄取量。
进一步地，如图2所示，所述封装层180包括第一无机层140、有机层150和第二无机层160。其中，第一无机层140可通过PECVD ( Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法)、PLD（Pulsed Laser Deposition，脉冲激光沉积）或溅射（Sputter）的方式沉积获得，厚度在0.01~1um之间，第一无机层140的材料包括但不限于Al2O3、TiO2、SiNx、SiCNx、SiOx、ZrO2等用于增加阻水、氧功能的无机功能材料。有机层150可通过喷墨打印（IJP）的方式沉积获得，有机层150的材料包括但不限于六甲基二甲硅醚（HMDSO）、丙烯酸酯（Acrylate）、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯等有机透明材料。第二无机层160可通过PECVD、PLD或溅射的方式沉积获得，厚度在0.01~1um之间，第二无机层160的材料包括但不限于Al2O3、TiO2、SiNx、SiCNx、SiOx、ZrO2等用于增加阻水、氧功能的无机功能材料。
所述第一无机层140设于所述有机发光层130和所述第二开口121底部的光透过层102的表面；所述有机层150设于所述第一无机层140的表面并填充所述第二开口121；所述第二无机层160设于所述有机层150的表面。
在一个具体的实施方式中，如图1所示，所述有机膜层110远离所述封装层180的一侧还设有衬底膜层170，所述电子元件区171是设于所述衬底膜层170中的第三开口，且第三开口与光透过层102的位置相对应。其中，衬底膜层170包括底部模组等复合膜层。
在另一个具体的实施方式中，如图2所示，所述有机膜层110与所述电子元件区171之间还设有衬底膜层170，电子元件区171设于衬底膜层170远离有机膜层110的一侧。
由上述可知，本实施例提供的OLED显示面板，在有机膜层中设置第一开口，并在第一开口中填充透光材料，形成光透过层，在面板底部与光透过层的相对应的位置设置电子元件区，能够避免大量光线损失，有效增强OLED穿透度，提高屏下传感器的光摄取量。
参见图3，是本发明实施例提供的OLED显示面板的制作方法的流程示意图。
本发明实施例提供的OLED显示面板的制作方法包括：
101、提供基板。
本实施例中，基板为玻璃衬底。
102、在所述基板上形成光透过层，并在所述光透过层周围的基板上形成有机膜层。
本实施例中，先在基板上形成光透过层，再在基板上形成有机膜层，以使光透过层和有机膜层共同位于基板的一侧，且有机膜层位于光透过层的周围。
具体地，步骤102包括：
在所述基板上依次形成第一牺牲层、光透过层、第二牺牲层和阻隔层；
在所述光透过层周围的基板上形成有机膜层；所述有机膜层的厚度不大于所述第一牺牲层与所述光透过层的厚度之和。
如图4所示，先在基板100上依次形成第一牺牲层101、光透过层102、第二牺牲层103和阻隔层104。其中，第一牺牲层101位于基板100上，光透过层102位于第一牺牲层101远离基板100的一侧，第二牺牲层103位于光透过层102远离第一牺牲层101的一侧，阻隔层104位于第二牺牲层103远离光透过层102的一侧。
其中，光透过层102和阻隔层104均为透明玻璃材质，可以采用玻璃粉并通过3D打印方式制备获得。光透过层102和阻隔层104的厚度均在10~20um之间。光透过层102可呈圆柱体或纵截面为等腰梯形的多面体，阻隔层104可为纵截面为倒梯形的多面体，且倒梯形的较长底边与斜边之间的夹角小于60°，以后续制程的膜层能够被阻隔层104隔断。
第一牺牲层101和第二牺牲层103的材质均为透明导电氧化物，其材料可以为AZO、ITO或IZO等，以通过PVD或溅射等方式进行沉积获得。需要说明的是，透明导电氧化物具有的特质是表面粗糙可调控，因此可通过沉积不同厚度的第一牺牲层101和第二牺牲层103来对应获得不同粗糙度的第一牺牲层101和第二牺牲层103，从而调节第一牺牲层101与基板100之间的粘附力以及第二牺牲层103与光透过层102之间的粘附力。本实施例中，所述阻隔层104与所述第二牺牲层103之间的粘附力大于所述第二牺牲层103与所述光透过层102之间的粘附力；所述第二牺牲层103与所述光透过层102之间的粘附力大于所述第一牺牲层101与所述基板100之间的粘附力。
进而，如图5所示，在光透过层102周围的基板100上形成有机膜层110，有机膜层110可通过涂布、悬涂等方式进行制备。有机膜层110的材料包括但不限于聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)等聚合物材料。有机膜层110的厚度不得超过第一牺牲层101与光透过层102的厚度之和，即有机膜层110的上表面平齐于或略低（不得大于0.5um）于光透过层102的上表面。
103、在所述有机膜层上依次形成阵列层、有机发光层和封装层。
本实施例中，阵列层位于有机膜层远离基板的一侧，有机发光层位于阵列层远离有基板的一侧，封装层位于有机发光层远离基板的一侧。
具体地，步骤103包括：
在所述有机膜层上依次形成阵列层和有机发光层；
采用机械剥离的方式去除所述第二牺牲层，以在所述阵列层和有机发光层中形成第二开口；
在所述有机发光层上形成封装层，并使所述封装层填充所述第二开口，以与所述光透过层接触。
如图6所示，先在有机膜层110上形成阵列层120，再在阵列层120上形成有机发光层130。其中，阵列层120包括TFT等膜层，可通过CVD、涂布、曝光、蚀刻等方式制备。有机发光层130包括电子注入层、电子传输层、发光层、空穴传输层、空穴注入层等复合膜层，可通过蒸镀设备进行制备。另外，有机发光层130还可包括蒸镀完毕后的无机封装层。有机膜层110对应的有机发光层130的上表面低于阻隔层104的上表面，以使有机膜层110对应的阵列层120和有机发光层130分别与所述阻隔层104对应的阵列层120和有机发光层130隔断。
进而，通过机械剥离的方式将第二牺牲层103、阻隔层104以及阻隔层104对应的阵列层120和有机发光层130进行剥离，以裸露光透过层102。剥离后，如图7所示，有机膜层110对应的阵列层120和有机发光层130中形成第二开口121。
如图8所示，封装层包括第一无机层140、有机层150和第二无机层160。在保留的有机发光层130和第二开口121底部的光透过层102的表面形成第一无机层140。在第一无机层140的表面形成有机层150，且有机层150填充第二开口121中，进而在有机层150的表面形成第二无机层160。
其中，第一无机层140可通过PECVD、PLD或溅射的方式沉积获得，厚度在0.01~1um之间，第一无机层140的材料包括但不限于Al2O3、TiO2、SiNx、SiCNx、SiOx、ZrO2等用于增加阻水、氧功能的无机功能材料。有机层150可通过IJP的方式沉积获得，有机层150的材料包括但不限于HMDSO、Acrylate、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯等有机透明材料。第二无机层160可通过PECVD、PLD或Sputter的方式沉积获得，厚度在0.01~1um之间，第二无机层160的材料包括但不限于Al2O3、TiO2、SiNx、SiCNx、SiOx、ZrO2等用于增加阻水、氧功能的无机功能材料。
104、去除所述基板；所述有机膜层远离所述封装层的一侧设有与所述光透过层的位置相对应的电子元件区。
具体地，步骤105包括：
采用机械剥离的方式去除所述基板和所述第一牺牲层，以裸露所述光透过层和所述有机膜层。
如图9所示，通过机械剥离的方式将基板100和第一牺牲层101进行剥离，以裸露出光透过层102和有机膜层110。同时，在有机膜层110远离所述封装层的一侧设置电子元件区（图9未示出），并将电子元件区与光透过层对应设置，有效增强OLED穿透度，提高屏下传感器的光摄取量。
进一步地，在所述去除所述基板之后，还包括：
在所述有机膜层远离所述封装层的一侧形成衬底膜层，并在所述衬底膜层上开设第三开口，以将所述第三开口作为所述电子元件区。
如图1和图2所示，在光透过层102和有机膜层110远离封装层的一侧形成衬底膜层170，衬底膜层170为底部模组等复合膜层。如图1所示，电子元件区171可以是衬底膜层170上开设的第三开口，如图2所示，电子元件区171也可以设于衬底膜层170远离有机膜层110的一侧。电子元件区上方穿过率较低的膜层均已去除，使得在传感器元件（例如摄像头传感器）放入电子元件区171时，光线穿过膜层到达传感器元件的损失率大幅度降低。
由上述可知，本实施例提供的OLED显示面板的制作方法，在有机膜层中设置第一开口，并在第一开口中填充透光材料，形成光透过层，在面板底部与光透过层的相对应的位置设置电子元件区，能够避免大量光线损失，有效增强OLED穿透度，提高屏下传感器的光摄取量；OLED显示面板制作过程中避免使用激光镭射切割，减少由于激光镭射切割带来的损害。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

  1. 一种OLED显示面板，其中，包括层叠设置的有机膜层、阵列层和有机发光层以及设于所述有机发光层上的封装层；
    所述有机膜层中设有第一开口，所述第一开口中填充有透光材料，以形成光透过层；所述有机膜层远离所述封装层的一侧设有与所述光透过层的位置相对应的电子元件区。
  2. 根据权利要求1所述的OLED显示面板，其中，所述阵列层和所述有机发光层上对应设有第二开口，且所述第二开口与所述光透过层的位置相对应；
    所述封装层设于所述有机发光层的表面并填充所述第二开口，以与所述光透过层接触。
  3. 根据权利要求2所述的OLED显示面板，其中，所述封装层包括第一无机层、有机层和第二无机层；
    所述第一无机层设于所述有机发光层和所述第二开口底部的光透过层的表面；所述有机层设于所述第一无机层的表面并填充所述第二开口；所述第二无机层设于所述有机层的表面。
  4. 根据权利要求1所述的OLED显示面板，其中，所述有机膜层与所述电子元件区之间还设有衬底膜层。
  5. 根据权利要求1所述的OLED显示面板，其中，所述有机膜层远离所述封装层的一侧还设有衬底膜层，所述电子元件区是设于所述衬底膜层中的第三开口。
  6. 根据权利要求1所述的OLED显示面板，其中，所述光透过层呈圆柱体或纵截面为等腰梯形的多面体，所述透光材料为透明玻璃。
  7. 根据权利要求1所述的OLED显示面板，其中，所述有机膜层的材质包括聚酰亚胺和聚对苯二甲酸乙二醇酯中的任意一种。
  8. 一种OLED显示面板的制作方法，其中，包括：
    提供基板；
    在所述基板上形成光透过层，并在所述光透过层周围的基板上形成有机膜层；
    在所述有机膜层上依次形成阵列层、有机发光层和封装层；
    去除所述基板；所述有机膜层远离所述封装层的一侧设有与所述光透过层的位置相对应的电子元件区。
  9. 根据权利要求8所述的OLED显示面板的制作方法，其中，所述在所述基板上形成光透过层，并在所述光透过层周围的基板上形成有机膜层，具体包括：
    在所述基板上依次形成第一牺牲层、光透过层、第二牺牲层和阻隔层；
    在所述光透过层周围的基板上形成有机膜层；所述有机膜层的厚度不大于所述第一牺牲层与所述光透过层的厚度之和。
  10. 根据权利要求9所述的OLED显示面板的制作方法，其中，所述阻隔层与所述第二牺牲层之间的粘附力大于所述第二牺牲层与所述光透过层之间的粘附力；所述第二牺牲层与所述光透过层之间的粘附力大于所述第一牺牲层与所述基板之间的粘附力。
  11. 根据权利要求9所述的OLED显示面板的制作方法，其中，所述光透过层呈圆柱体或纵截面为等腰梯形的多面体；所述阻隔层呈纵截面为倒梯形的多面体。
  12. 根据权利要求9所述的OLED显示面板的制作方法，其中，所述透光材料为透明玻璃，所述阻隔层的材质为透明玻璃，所述第一牺牲层和所述第二牺牲层的材质为透明导电氧化物。
  13. 根据权利要求9所述的OLED显示面板的制作方法，其中，所述在所述有机膜层上依次形成阵列层、有机发光层和封装层，具体包括：
    在所述有机膜层上依次形成阵列层和有机发光层；
    采用机械剥离的方式去除所述第二牺牲层，以在所述阵列层和有机发光层中形成第二开口；
    在所述有机发光层上形成封装层，并使所述封装层填充所述第二开口，以与所述光透过层接触。
  14. 根据权利要求8所述的OLED显示面板的制作方法，其中，在所述去除所述基板之后，还包括：
    在所述有机膜层远离所述封装层的一侧形成衬底膜层，并在所述衬底膜层上开设第三开口，以将所述第三开口作为所述电子元件区。
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