WO2020141775A1

WO2020141775A1 - Semiconductor chip laser bonding device

Info

Publication number: WO2020141775A1
Application number: PCT/KR2019/018261
Authority: WO
Inventors: 안근식; 심무섭
Original assignee: 주식회사 프로텍
Priority date: 2019-01-02
Filing date: 2019-12-20
Publication date: 2020-07-09
Also published as: KR20200084174A; TW202032692A

Abstract

The present invention relates to a semiconductor chip laser bonding device and, more specifically, to a semiconductor chip laser bonding device which picks up a semiconductor chip supplied by means of a chip carrier, presses the semiconductor chip against a substrate, etc., and then irradiates laser light to the chip for bonding. The semiconductor chip laser bonding device, according to the present invention, does not heavily raise the temperature of a semiconductor chip during a semiconductor chip bonding process, and thus has the effect of solving any problem which may occur due to damage or thermal expansion of the semiconductor chip. In addition, by using laser light, the method rapidly reaches a temperature required for bonding and significantly reduces the time for lowering the temperature of the semiconductor chip, thereby having the effect of shortening the entire processing time.

Description

Semiconductor chip laser bonding device

The present invention relates to a semiconductor chip laser bonding apparatus, and more particularly, to a semiconductor chip laser bonding apparatus for picking up a semiconductor chip supplied through a chip carrier and pressing it against a substrate, etc., and then irradiating and bonding the laser light to the chip. .

The semiconductor chip bonding apparatus picks up a semiconductor chip formed on a wafer or a semiconductor chip cut on a wafer and attached to an adhesive film called a blue sheet to a target such as a lead frame or substrate for use in the next process. It is a device to be attached.

Among these semiconductor chip bonding apparatuses, a thermal compression bonding apparatus is generally bonded by heating a semiconductor chip while the semiconductor chip is pressed against the target to fuse a solder ball of the semiconductor chip to the target. The conventional TC bonder has a problem in that the semiconductor chip may be damaged in the process of heating the semiconductor chip. In addition, the conventional thermal compression type semiconductor chip bonder has a problem in that the overall process efficiency is lowered because it takes time to heat or cool the heating block that adsorbs the semiconductor chip and presses the target.

In order to solve this problem, a semiconductor chip bonding apparatus capable of bonding to a target by rapidly increasing a temperature of a solder pump or a solder ball of a semiconductor chip without increasing the temperature of the semiconductor chip itself is required.

The present invention has been devised to solve the need as described above, a semiconductor capable of bonding a semiconductor chip to a target by rapidly heating a solder bump or a solder ball of the semiconductor chip without significantly increasing the temperature of the semiconductor chip itself. It is an object to provide a chip laser bonding apparatus.

A semiconductor chip laser bonding apparatus according to the present invention for achieving the above object comprises: a head unit for receiving a semiconductor chip from a chip carrier and clamping to pre-bond to a target; A first transfer unit for transferring the head unit in the horizontal and vertical directions so that the semiconductor chip clamped to the head unit is aligned and pressed against the target; A target transfer unit for transferring the target pre-bonded by the semiconductor chip in the horizontal direction by the head unit; A laser head that irradiates laser light to the semiconductor chip so as to adhere the target and the semiconductor chip to each other by applying heat to the solder bumps of the semiconductor chip prebonded to the target; And a control unit that controls the operation of the head unit, the first transfer unit, the target transfer unit, and the laser head.

Since the semiconductor chip laser bonding apparatus according to the present invention does not significantly increase the temperature of the semiconductor chip itself during the semiconductor chip bonding process, there is an effect of solving a problem that may occur due to damage or thermal expansion of the semiconductor chip.

1 is a block diagram of a semiconductor chip laser bonding apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view of a head unit of the semiconductor chip laser bonding apparatus shown in FIG. 1.

3 is a perspective view of a portion of the head unit shown in FIG. 2.

4 and 5 are cross-sectional views taken along line III-III of the head unit shown in FIG. 3.

FIG. 6 is a perspective view of the laser head of the semiconductor chip laser bonding apparatus shown in FIG. 2.

7 is a front view of the laser chip and the semiconductor chip and the target bonded by the laser head shown in FIG.

Hereinafter, a semiconductor chip laser bonding apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings.

The semiconductor chip laser bonding device of the present invention is a device that picks up a semiconductor chip and bonds it to a target. The target of this embodiment may be a substrate to which a semiconductor chip is bonded, or another semiconductor chip in a state bonded on a substrate. Here, when another semiconductor chip is a target, for example, when a semiconductor chip manufactured with a technology such as through silicon via (TSV) is stacked on a substrate. Referring to FIG. 1, a semiconductor chip laser bonding apparatus according to the present exemplary embodiment includes a head unit 1000 for picking up a semiconductor chip and prebonding it to a target, and a laser head 2000 for bonding a semiconductor chip prebonded to a target to a target. ). Here, the pre-bonding refers to a bonding process in which the position of the semiconductor chip and the target is fixed using an adhesive material before completely bonding the connection portion such as a solder bump formed on the semiconductor chip and the target.

First, the head unit 1000 and the first transfer unit 520 for transferring the head unit 1000 will be described in detail with reference to FIGS. 3 to 5. FIG. 3 is a perspective view of a portion of the semiconductor chip laser bonding apparatus shown in FIG. 2, and FIGS. 4 and 5 are cross-sectional views taken along line III-III of the semiconductor chip laser bonding apparatus shown in FIG. 2.

3 to 4, the head unit 1000 of the semiconductor chip laser bonding apparatus according to the present embodiment includes a housing 100, a stretching member 200, and a clamping member 300.

The housing 100 includes a first accommodation space 110 and a second accommodation space 120. The first accommodating space 110 and the second accommodating space 120 are each formed in a cavity shape extending upward and downward. The first accommodation space 110 is disposed above the housing 100, and the second accommodation space 120 is disposed below the housing 100.

The stretching member 200 is disposed in the first receiving space 110 of the housing 100. The stretching member 200 includes a pneumatic chamber 210 filled with air therein. According to the pressure and external force of the pneumatic chamber 210, the elastic member 200 is elastically deformed to increase or decrease in length. In the present embodiment, the elastic member 200 is configured in the form of metal bellows. That is, the elastic member 200 is formed in the form of a corrugated pipe made of metal.

A pneumatic regulator 600 is connected to the pneumatic chamber 210 to adjust the pressure of the pneumatic chamber 210. The control unit 700 controls the operation of the pneumatic regulator 600. When the pressure inside the pneumatic chamber 210 increases by the pneumatic regulator 600, the length of the stretching member 200 increases, and when the pressure inside the pneumatic chamber 210 decreases, the length of the stretching member 200 decreases. When the pressure inside the pneumatic chamber 210 is constant and an external force is applied to the elastic member 200 in the vertical direction, the length of the elastic member 200 is reduced.

A stopper 121 is formed in the first accommodation space 110 of the housing 100. The stopper 121 serves to limit the length of the stretchable member 200 so that the length of the stretchable member 200 does not extend beyond a predetermined length. That is, as illustrated in FIG. 4, when the pressure inside the pneumatic chamber 210 is increased by the pneumatic regulator 600 to increase the length of the expansion and contraction member 200, the expansion and contraction member 200 is caught by the stopper 121. . The stopper 121 serves to prevent the stretchable member 200 from extending beyond a predetermined length.

The clamping member 300 is configured to clamp the semiconductor chip. In this embodiment, the clamping member 300 clamps the semiconductor chip by a vacuum adsorption method. As shown in Figure 4, the clamping member 300 is installed to be elevated in the second receiving space 120 of the housing 100, and is coupled to the lower portion of the expansion and contraction member 200. When the length of the stretching member 200 increases or decreases, the clamping member 300 descends or rises along the stretching member 200.

4, the rotating member 510 is installed in the housing 100. The rotating member 510 rotates the clamping member 300 relative to the housing 100 to adjust the direction of the semiconductor chip clamped to the clamping member 300. In the case of this embodiment, the rotating member 510 is combined with the elastic member 200. The rotating member 510 rotates the clamping member 300 coupled with the elastic member 200 by rotating the elastic member 200. As described above, since the elastic member 200 is configured in the form of a metal bellows, the elastic member 200 is elastically deformed in the longitudinal direction, but is not torsionally deformed around the vertical central axis. Therefore, when the rotating member 510 rotates the elastic member 200, the clamping member 300 together with the elastic member 200 also rotates in the same angular displacement.

The displacement sensor 400 is installed in the first accommodation space 110 of the housing 100. The displacement sensor 400 measures the vertical displacement of the clamping member 300 relative to the housing 100 and transmits it to the control unit 700. In the present embodiment, the displacement sensor 400 indirectly measures the vertical displacement of the clamping member 300 by measuring the displacement of the lower end of the elastic member 200. The displacement sensor 400 of this embodiment includes an encoder scale 410 and a lead head 420 as shown in FIG. 4. The encoder scale 410 is installed at the lower end of the expansion and contraction member 200. The encoder scale 410 moves up and down according to a change in the length of the elastic member 200. The lead head 420 is installed on the inner wall of the first accommodation space 110 of the housing 100. The read head 420 detects a change in the vertical displacement of the encoder scale 410 and transmits it to the control unit 700.

Referring to FIG. 2, the first transfer unit 520 is coupled to the housing 100 of the head unit 1000. The first transfer unit 520 transfers the head unit 1000 in the horizontal direction and moves up and down. At the position determined by the first transfer unit 520, the first transfer unit 520 lowers the housing 100 of the head unit 1000 to pick up the semiconductor chip. When the first transfer unit 520 transfers the head unit 1000 over the target, the first transfer unit 520 lowers the housing 100 of the head unit 1000 to press the semiconductor chip to the target and prebond it. .

Next, the laser head 2000 and the rest of the configuration will be described in detail with reference to FIGS. 6 and 7. 6 is a perspective view of the laser head 2000 of the semiconductor chip laser bonding apparatus shown in FIG. 2, and FIG. 7 is a cross-sectional view of the laser head 2000 shown in FIG. 6.

The laser head 2000 bonds the semiconductor chip pre-bonded to the target by the head unit 1000 described above to the target. The laser head 2000 includes a light source that generates laser light. The laser head 2000 includes a pressure unit 2100 and a second transfer unit 2200.

6 and 7, the pressing unit 2100 is disposed under the laser head 2000. The pressing unit 2100 includes a transmission portion 2140, a pressing member 2110, a supporting member 2120, and a tilt member 2130. The transmitting portion 2140 transmits laser light generated from the light source of the laser head 2000. The transmissive portion 2140 is made of quartz and has high transmittance. Referring to FIG. 6, the transmission part 2140 is coupled to the pressing member 2110. The pressing member 2110 is disposed to be positioned above the semiconductor chip pre-bonded to the target. The support member 2120 is disposed above the pressing member 2110.

6 and 7, the tilt member 2130 is installed between the support member 2120 and the pressure member 2110 to connect the pressure member 2110 and the support member 2120. The tilt member 2130 adjusts the angle of the pressing member 2110 with respect to the support member 2120. The tilt member 2130 again includes three tilt rods 2131 and three force sensors 2132. The tilt rod 2131 connects the support member 2120 and the pressing member 2110 at three points. That is, the support member 2120 and the pressing member 2110 are connected to each other by three tilt rods 2131. In this embodiment, the tilt rod 2131 is composed of a piezoelectric actuator. The piezoelectric actuator is composed of a piezoelectric element whose length is changed by an applied voltage. The length of the tilt rod 2131 composed of a piezoelectric actuator is varied by the applied voltage. The inclination angle of the pressing member 2110 is adjusted by changing the lengths of the three tilt rods 2131 according to the applied voltage of the control unit 700.

The force sensor 2132 is installed on the pressing member 2110 and measures the force applied to the pressing member 2110. In the case of this embodiment, the force sensor 2132 is composed of a piezoelectric element. The piezoelectric element generates a voltage according to a change in external force applied to the piezoelectric element. The force sensor 2132 generates a voltage through a change in the force applied to the pressing member 2110, detects the amount of change in the force, and transmits the result to the control unit 700.

The second transfer unit 2200 transfers the pressing unit 2100 in the vertical direction. When the second transfer unit 2200 descends the pressing unit 2100, the transmission unit 2140 of the pressing unit 2100 can press the semiconductor chip pre-bonded to the target.

Next, the target transfer unit 3000 and the control unit 700 will be described.

The target transfer unit 3000 transfers the target to which the semiconductor chip is pre-bonded by the head unit 1000 described above in the horizontal direction. The target transfer unit 3000 transfers the target in which the pre-bonding process is completed in the head unit 1000 in the horizontal direction to transfer the target to the working space of the laser head 2000.

The control unit 700 controls both the operation of the head unit, the second transfer unit 2200, the target transfer unit 3000, and the laser head 2000. The detailed description of the control of the control unit 700 will be made in the description of the operation of the semiconductor chip laser bonding apparatus according to the present embodiment.

Hereinafter, the operation of the head unit 1000 configured as described above will be described.

First, an operation of prebonding the semiconductor chip to the target through the operation of the head unit 1000 will be described.

In order to prebond the semiconductor chip to the target, an adhesive material is previously attached to the target to which the semiconductor chip is prebonded. Various adhesive materials can be used for semiconductor chip pre-bonding, but in the present embodiment, a non-conductive film (NCF) is used. The non-conductive film is an insulating film having tackiness. In the present embodiment, a semiconductor chip is bonded by receiving a target having a non-conductive film attached to the substrate or a non-conductive film attached to the semiconductor chip bonded onto the substrate. When the semiconductor chip is pressed against the non-conductive film of the target, the semiconductor chip may be pre-bonded to the target by the adhesiveness of the non-conductive film.

The control unit 700 operates the pneumatic regulator 600 to maintain a constant air pressure in the pneumatic chamber 210 of the expansion and contraction member 200. When the pressure inside the pneumatic chamber 210 increases, the expansion and contraction member 200 increases to a length in contact with the stopper 121 as shown in FIG. 4.

In this state, the control unit 700 operates the head unit 1000 and the first transfer unit 520 so that the head unit 1000 picks up the semiconductor chip. As described above, when the first transfer unit 520 horizontally transfers the head unit 1000 of the present embodiment to a location where the semiconductor chip is to be picked up, the control unit 700 operates the first transfer unit 520. When the first transfer unit 520 lowers the housing 100 to contact the clamping member 300 with the semiconductor chip, the clamping member 300 adsorbs and clamps the semiconductor chip. In this state, when the first transfer unit 520 raises the housing 100, the clamping member 300 separates and lifts the semiconductor chip from the chip carrier.

According to the command of the control unit 700, the first transfer unit 520 transfers the head unit 1000 of the present embodiment onto the target. In this state, the control unit 700 controls the direction of the semiconductor chip clamped to the clamping member 300 by rotating the elastic member 200 by operating the rotating member 510. To this end, a semiconductor chip and a target are photographed using a camera in advance. Based on the image taken by the camera, the controller 700 aligns the position and direction between the target and the semiconductor chip.

Next, the control unit 700 operates the first transfer unit 520 to lower the clamping member 300. When the clamping member 300 descends and the semiconductor chip contacts the target, the stretching member 200 begins to contract. The force pressing the semiconductor chip by the contraction displacement of the expansion and contraction member 200 is determined in a state in which a constant pressure is maintained in the pneumatic chamber 210 by the pneumatic regulator 600. Typically, the pressure for pressing the semiconductor chip against the target is determined in advance as a process specification. The control unit 700 adjusts the pressing force of the semiconductor chip against the target by adjusting the contraction displacement value of the elastic member 200 (that is, the displacement that lowers the housing 100 by the first transfer unit 520). . The control unit 700 receives the degree of contraction of the elastic member 200 in real time using the displacement sensor 400. The controller 700 lowers the housing 100 through the first transfer unit 520 to a predetermined displacement while sensing the measured value of the displacement sensor 400 in real time.

Since the non-conductive film as an adhesive material is mounted on the semiconductor chip or target as described above, when the semiconductor chip is pressed against the target, the semiconductor chip is prebonded to the target.

The control unit 700 releases the vacuum of the clamping member 300 to place the semiconductor chip on the target, and raises the housing 100 through the first transfer unit 520. When the clamping member 300 is raised by the operation of the first transfer unit 520, the semiconductor chip pre-bonding process is completed.

As described above, the head unit 1000 of the present embodiment adjusts the operation of the first transfer unit 520 while real-time detecting the change in the length of the expansion and contraction member 200, so that the pressing force of the semiconductor chip against the target is accurate and It has the advantage of being elaborately adjustable.

In particular, when pre-bonding a very thin semiconductor chip to a target, there is an advantage of effectively preventing a defect in which the semiconductor chip is broken by the pressing force of the clamping member 300.

As the thickness of the semiconductor chip becomes thinner, the pressing force for pressing the semiconductor chip is determined as a microload. The head unit 1000 of this embodiment can accurately and precisely adjust the pressing force for such a microload.

The pressure generated by the pneumatic regulator 600 and the elastic modulus of the expansion and contraction member 200 may vary depending on the temperature and ambient environmental conditions. In this case, after considering the variables affecting the pressing force, Since the change can be compensated or corrected by a change in the descending displacement of the first transfer unit 520 (ie, the contraction displacement of the elastic member 200), it is possible to greatly improve the quality of the pre-bonding process.

As described above, when the head unit 1000 pre-bonds the semiconductor chip to the target, the control unit 700 operates the target transfer unit 3000. The target transfer unit 3000 transfers the pre-bonded target in a horizontal direction to the semiconductor chip so that the target is transported to the working area of the laser head 2000.

As described above, when the target is transported to the working area of the laser head 2000, the state is as shown in FIG. 7. As shown in Fig. 7, the semiconductor chip is adhered to the target by a non-conductive film. The control unit 700 operates the second transfer unit 2200. In the case of the semiconductor chip laser bonding apparatus according to the present embodiment, the pre-bonded semiconductor chip is bonded to the target on which the non-conductive film is placed. In order to bond the semiconductor chip, a connection portion such as a solder bump of the semiconductor chip must pass through the non-conductive film to contact the connection portion of the target. For this reason, it is necessary to press the semiconductor chip with a relatively large force against the target. By the operation of the second transfer unit 2200, the pressing unit 2100 of the laser head 2000 descends toward the target. By the descending of the pressing unit 2100, the transmissive portion 2140 coupled to the pressing member 2110 and the semiconductor chip pre-bonded to the target begin to contact.

In some cases, the semiconductor chip and the target may be pre-bonded in a state that is not aligned with each other. In this state, when the pressing member 2110 presses the semiconductor chip, a connection failure problem may occur. This connection failure is a problem that occurs when the connection portion of the semiconductor chip does not contact the connection portion of the target in the portion pressed with a relatively weak force. In some cases, misalignment of the semiconductor chip and the target may also occur. In the semiconductor chip laser bonding apparatus according to the present embodiment, in the pressing process of the semiconductor chip, the tilt member 2130 adjusts the angle of the pressing member 2110 so that the semiconductor chip and the target are parallel to each other. Further, the tilt member 2130 allows the force applied by the pressing member 2110 to the semiconductor chip to be constant.

As described above, the semiconductor chip laser bonding apparatus according to the present embodiment includes a tilt member 2130 installed between the support member 2120 and the pressing member 2110. When the transmission part 2140 coupled to the pressing member 2110 starts to contact the semiconductor chip, the force sensor 2132 of the tilt member 2130 measures the change in contact force between the semiconductor chip and the pressing member 2110. As described above, the force sensor 2132 is composed of three, and the three force sensors 2132 measure a change in contact force. The control unit 700 applies a voltage to the tilt rod 2131 of the tilt member 2130 based on the contact force measured by the force sensor 2132. That is, the control unit 700 applies a voltage to the tilt rod 2131 so that the contact forces measured by the force sensors 2132 are equal to each other.

For example, if the contact force measured by one of the three force sensors 2132 is greater than the other two contact forces, the semiconductor chip and the target are inclined with each other, or the pressing member 2110 is unbalanced. It means that the semiconductor chip is being pressed with one force. The control unit 700 applies a voltage to the tilt rod 2131 disposed at a portion where two force sensors 2132 having a small contact force are located. The voltage-applied tilt rod 2131 increases in length. The angle of the pressing member 2110 relative to the supporting member 2120 is changed by the tilt rod 2131 whose length is increased. In addition, the pressing member 2110 presses the semiconductor chip with a stronger force than before in the portion where the tilt rod 2131 having an increased length is installed. Due to this, the pressing member 2110 can press the semiconductor chip in a tilted state so that the semiconductor chip is pressed in a state parallel to the target. In addition, the force exerted by the pressing member 2110 on the semiconductor chip becomes constant at all portions. In this way, the control unit 700 applies a voltage to the tilt rod 2131 so that the values measured by the force sensor 2132 are all the same. Due to this, the transmissive portion 2140 is maintained in parallel with the semiconductor chip, and the pressing member 2110 can press the semiconductor chip against the target with a uniform force. For this reason, it is possible to completely solve the above-described connection problem between the semiconductor chip and the target.

Meanwhile, the force sensor 2132 is composed of a piezoelectric element. The piezoelectric element has a very fast reaction speed compared to a general load cell capable of detecting a change in contact force, and thus it is possible to quickly detect the inclined state of the pressing member 2110. In addition, the tilt rod 2131 for correcting the inclination of the pressing member 2110 according to the applied voltage of the control unit 700 through the measured value of the force sensor 2132 is composed of a piezoelectric actuator. The piezoelectric actuator has a very fast response speed and generates a strong force. As described above, in order to bond the semiconductor chip and the target using a non-conductive film, it is necessary to press the semiconductor chip with a relatively strong force against the target. Since piezoelectric actuators generate strong forces, they are suitable for bonding semiconductor chips using adhesive materials such as non-conductive films. Thus, the tilt rod 2131 can solve the misalignment problem by correcting the angle of the pressing member 2110 very quickly and accurately. That is, the semiconductor chip laser bonding apparatus according to the present embodiment has the effect of quickly measuring the inclination of the pressing member 2110 using a piezoelectric element and a piezoelectric actuator, and quickly correcting it, thereby blocking the problem of misalignment.

Alignment of the pressing member 2110 of the tilt member 2130 may be performed each time the semiconductor chip is pressed, or the rest of the semiconductor chip pressing may be performed while fixing the pressing member 2110 aligned during the pressing process of the first semiconductor chip. It might be. The angle formed between the semiconductor chips pre-bonded to the target and the pressing member 2110 is generally the same. Once the pressing member 2110 and the semiconductor chip are aligned in parallel, the rest of the semiconductor chip and the pressing member 2110 are also in parallel. In this case, since the alignment of the tilt member 2130 does not need to be performed individually, the process time can be slightly shortened.

In this way, the light source of the laser head 2000 irradiates laser light while the transmissive portion 2140 coupled to the pressing member 2110 presses the semiconductor chip. The laser light transmitted through the transmissive portion 2140 is transmitted to the semiconductor chip to rapidly and rapidly increase the temperature of the connecting portion. Due to this, the connection portion of the semiconductor chip is instantaneously melted and the semiconductor chip and the target are bonded. This is called laser bonding. Unlike the commonly used thermo-bonding (TC Bonding) process, laser bonding rapidly raises the temperature of a semiconductor chip without a heating block, which significantly reduces the problem of semiconductor chip and target misalignment due to thermal expansion of the semiconductor chip. Can be reduced. In addition, laser bonding can perform a faster bonding because the process of lowering the temperature of the heating block can be omitted, unlike the heat press bonding process. That is, the semiconductor chip laser bonding apparatus according to the present embodiment has an effect of solving the problem of misalignment of the semiconductor chip and the target through laser bonding and shortening the process time. In the process of laser bonding, the non-conductive film is also cured as described above. The cured non-conductive film fills the empty space between the semiconductor chip and the target, thereby increasing the physical and chemical stability of the semiconductor packaging.

On the other hand, it is also possible to perform laser bonding by controlling the size of the transmissive portion 2140 to press a plurality of semiconductor chips at once. When the large-sized transmission unit 2140 presses the plurality of semiconductor chips at once and laser bonding is performed in this state, the plurality of semiconductor chips are bonded to the target at once. This can shorten the process time for bonding the semiconductor chip and the target.

When the semiconductor chip is completely bonded to the target by laser bonding, the control unit 700 operates the second transfer unit 2200 again. The second transfer unit 2200 raises the pressure unit 2100. Next, the control unit 700 operates the target transfer unit 3000 so that the target transfer unit 3000 transfers the semiconductor chip-bonded target to the next process.

The preferred embodiment of the present invention has been described above, but the scope of the present invention is not limited to the above-described and illustrated forms.

For example, the head unit 1000 provided with the elastic member 200 has been described as an example, but various head units capable of prebonding a semiconductor chip to a target may be used. That is, the semiconductor chip laser bonding apparatus may be configured as a head unit having a simple structure that simply picks up a semiconductor chip and transports it to a target to pre-bond the target.

In addition, the head unit 1000 having the rotating member 510 has been described as an example, but in some cases, a semiconductor chip laser bonding device without the rotating member 510 may be configured.

In addition, although the stretching member 200 was previously described as being composed of a metal bellows, it is also possible to configure a stretching member having a configuration other than the metal bellows. Various other configurations in which the length is stretched by the pressure of the pneumatic chamber can be used as the stretching member. For example, the spline shaft and the boss may be coupled to each other to construct a stretchable member using a structure constituting a pneumatic chamber between them.

In addition, the clamping member 300 may also be used in a structure capable of clamping the semiconductor chip by a method other than the vacuum adsorption method.

In addition, the displacement sensor 400 may be used in addition to the displacement sensor 400 composed of the encoder scale 410 and the lead head 420 described above, a displacement sensor of various other structures, such as a laser sensor.

In addition, although the tilt member 2130 has been described as having three tilt rods 2131 and three force sensors 2132, the number of tilt rods and force sensors may be variously changed.

In addition, although the tilt rod 2131 was previously described as being composed of a piezoelectric actuator, and the force sensor 2132 was composed of a piezoelectric element, the tilt rod may be composed of various actuators capable of length deformation, and the force sensor is also capable of contact force. It can be composed of various sensors that can be calculated.

In addition, although the force sensor 2132 was previously described as being installed on the pressing member 2110, the installation position of the force sensor can be variously changed. The force sensor may be installed at a position capable of measuring the force applied to the pressing member. For example, the force sensor can be installed between the tilt rod and the pressing member.

In addition, although the laser head 2000 described above includes the tilt member 2130, the laser chip with the tilt member 2130 omitted may constitute the semiconductor chip laser bonding apparatus according to the present invention.

The semiconductor chip laser bonding apparatus of the present invention may be manufactured in the form of parts that can be used in a die bonding apparatus, and may be produced, distributed, etc., or may be implemented in the form of a die bonding apparatus in which the semiconductor chip laser bonding apparatus of the present invention is installed. have.

Claims

A head unit for receiving a semiconductor chip from the chip carrier and clamping to pre-bond the target;

A first transfer unit for transferring the head unit in the horizontal and vertical directions so that the semiconductor chip clamped to the head unit is aligned and pressed against the target;

A target transfer unit for transferring the target pre-bonded by the semiconductor chip in the horizontal direction by the head unit;

A laser head that irradiates laser light to the semiconductor chip so as to adhere the target and the semiconductor chip to each other by applying heat to the solder bumps of the semiconductor chip prebonded to the target; And

And a control unit for controlling the operation of the head unit, the first transfer unit, the target transfer unit, and the laser head.
According to claim 1,

A pressing unit having a transmission portion capable of transmitting laser light irradiated from the laser head and disposed under the laser head; And

Further comprising; a second transfer unit for transferring the pressing unit in the vertical direction so as to press the semiconductor chip pre-bonded to the target by the transmission unit of the pressing unit;

The control unit, the semiconductor chip laser bonding apparatus for controlling the operation of the pressing unit and the second transfer unit.
According to claim 2,

The pressing unit is provided between the pressing member to which the transmission portion is coupled, the supporting member disposed above the pressing member, and the supporting member and the pressing member to adjust the angle of the pressing member with respect to the supporting member A semiconductor chip laser bonding device further comprising a tilt member.
According to claim 3,

The tilt member of the pressing unit, the semiconductor chip laser bonding apparatus is provided at three points to connect the pressing member and the support member to each other and has three tilt rods configured to increase or decrease in length according to the command of the control unit.
According to claim 4,

The tilt member of the pressing unit further includes a force sensor installed on any one of the three tilt rods and the pressing member to measure the force applied to the pressing member by the three tilt rods. Including,

The control unit, a semiconductor chip laser bonding apparatus for controlling the operation of the tilt rod using the measured value of the force sensor.
The method of claim 5,

Each of the three tilt rods of the tilt member is composed of a piezoelectric actuator whose length is changed by an applied voltage,

The three force sensors of the tilt member are composed of a piezoelectric element that generates a voltage according to a change in external force,

The controller is a semiconductor chip laser bonding apparatus for controlling the operation of the tilt member so that the deviation between the measured values measured by the force sensors is reduced.
According to claim 1,

The head unit,

A housing having a first accommodation space formed to extend vertically and a second accommodation space disposed below the first accommodation space and formed to extend vertically;

It is provided with a pneumatic chamber filled with air and is formed of a material that is elastically deformable in the vertical direction, and is arranged in a first accommodation space of the housing to be elastically deformable in the vertical direction by pressure and external force of the pneumatic chamber. Absence,

A clamping member coupled to the elastic member and installed in the second receiving space of the housing to slide up and down according to the movement of the elastic member, and clamping the semiconductor chip;

And a pneumatic regulator connected to the elastic member to adjust the pressure of the pneumatic chamber of the elastic member,

The control unit, the semiconductor chip laser bonding apparatus for controlling the operation of the clamping member and the pneumatic regulator and the first transfer unit.
The method of claim 7,

The head unit, the semiconductor chip laser bonding apparatus further comprises a rotating member that is installed in the housing to rotate the clamping member to adjust the direction of the semiconductor chip clamped to the clamping member.
The method of claim 8,

The expansion and contraction member of the head unit is formed in a metal bellows shape,

The rotating member of the head unit, the semiconductor chip laser bonding apparatus for adjusting the angle of the clamping member by rotating the stretching member.
The method of claim 7,

The housing of the head unit, the semiconductor chip laser bonding apparatus further comprises a stopper that is formed in the first receiving space so that the stretching member does not extend over a predetermined length to limit the length of the stretching member.
The method of claim 10,

The head unit,

And further comprising a displacement sensor installed in the housing to measure the vertical displacement of the clamping member relative to the housing,

The control unit, the semiconductor chip laser bonding apparatus for controlling the operation of the clamping member, the pneumatic regulator and the first transfer unit using the measured value of the displacement sensor.
The method of claim 11,

The displacement sensor of the head unit,

A semiconductor chip laser bonding apparatus comprising an encoder scale coupled to a lower portion of the elastic member and a lead head that detects a change in the vertical displacement of the encoder scale.
The method of claim 12,

The control unit, the semiconductor chip laser bonding apparatus for determining the vertical displacement range to elevate the housing by the first transfer unit using the displacement of the clamping member detected by the displacement sensor of the head unit to the housing.
The method of claim 12,

The control unit further lowers the housing by a displacement difference between a lower end of the elastic member and a stopper of the housing, using the displacement of the clamping member as a reference displacement when the elastic member contacts the stopper of the housing A semiconductor chip laser bonding apparatus that operates the first transfer unit to press a chip against the target.
The method of claim 10,

The control unit, the semiconductor chip laser bonding apparatus for determining the pressing force for pressing the semiconductor chip against the target with the pressure applied to the pneumatic chamber by the pneumatic regulator in the state that the elastic member is in contact with the stopper of the housing.