WO2020140748A1 - 阵列基板、电致发光面板及显示装置 - Google Patents

阵列基板、电致发光面板及显示装置 Download PDF

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WO2020140748A1
WO2020140748A1 PCT/CN2019/126102 CN2019126102W WO2020140748A1 WO 2020140748 A1 WO2020140748 A1 WO 2020140748A1 CN 2019126102 W CN2019126102 W CN 2019126102W WO 2020140748 A1 WO2020140748 A1 WO 2020140748A1
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layer
light
array substrate
base substrate
electrode
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PCT/CN2019/126102
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English (en)
French (fr)
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韩影
刘威
刘凤娟
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京东方科技集团股份有限公司
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Priority to US16/768,174 priority Critical patent/US11362152B2/en
Publication of WO2020140748A1 publication Critical patent/WO2020140748A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present disclosure relates to the field of semiconductor technology, and in particular, to an array substrate, an electroluminescence panel, and a display device.
  • Flat panel displays F1at Pane1 Disp1ay, FPD
  • LCD liquid crystal displays
  • OLED organic Light Emitted Diode
  • P1asma, Disp1ay, Pane1, PDP plasma Body display panel
  • FED Field Emission Display
  • An embodiment of the present disclosure provides an array substrate, including: a base substrate, a plurality of light sensing units on the base substrate, a flat layer on the light sensing units, and the flat Connection electrode layer above the layer;
  • Each of the light sensing units includes a first electrode, a photosensitive layer, and a second electrode located on the base substrate in sequence; wherein, the connection electrode layer is connected to the The second electrode is in communication.
  • a thin film transistor corresponding to each of the light sensing units is provided between the base substrate and the light sensing unit, wherein the source or drain of the thin film transistor The pole serves as the first electrode.
  • an auxiliary cathode is provided between the flat layer and the connection electrode layer, and the connection electrode layer is connected to the auxiliary cathode.
  • a spacer is provided between the auxiliary cathode and the connection electrode layer.
  • the orthographic projection of the spacer on the base substrate is smaller than the orthographic projection of the auxiliary cathode on the base substrate.
  • the orthographic projection of the spacer on the base substrate and the orthographic projection of the photosensor on the base substrate do not overlap each other.
  • the material of the second electrode layer is indium tin oxide; the material of the connection electrode layer is indium tin oxide.
  • An embodiment of the present disclosure also provides an electroluminescent panel, including the array substrate as provided by an embodiment of the present disclosure, and further including a light-emitting substrate disposed opposite to the array substrate and having a plurality of light-emitting units, wherein each The light-emitting unit includes an anode layer, a light-emitting layer, and a cathode layer, and the cathode layer is in contact with the connection electrode layer.
  • the light-emitting units and the light-sensing units are provided in one-to-one correspondence.
  • An embodiment of the present disclosure also provides a display device, including the electroluminescent panel as provided by the embodiment of the present disclosure.
  • FIG. 1 is a schematic structural diagram of an array substrate provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of an array substrate provided with thin film transistors according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of an array substrate provided with auxiliary cathodes and spacers according to an embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram of a display device provided by an embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of a manufacturing process of an array substrate provided by an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of a manufacturing process of a specific array substrate provided by an embodiment of the present disclosure.
  • a light sensor is provided at a position corresponding to each pixel unit, and in order to reduce the cathode voltage drop (IR drop), it is usually necessary to make an auxiliary cathode
  • the auxiliary cathode also needs to be connected to the cathode through the connection electrode layer, that is, the related art large-size OLED display panel has the problems of many manufacturing processes and a relatively complicated structure.
  • an embodiment of the present disclosure provides an array substrate, including: a base substrate 11, a plurality of light sensing units 14 on the base substrate 11, a flat layer 13 on the light sensing unit 14, And the connection electrode layer 15 on the flat layer 13; wherein,
  • Each light-sensing unit 14 includes a first electrode 141, a photosensitive layer 142, and a second electrode 143 that are sequentially positioned on the base substrate 11; wherein, the connection electrode layer 15 passes through the via hole penetrating the flat layer 13 and the second electrode 143 connected.
  • the photosensitive layer 142 may specifically be a PIN structure.
  • the array substrate includes: a plurality of light sensing units 14 on the base substrate 11, a flat layer 13 on the light sensing unit 14, and connection electrodes on the flat layer 13 Layer 15; wherein, each light-sensing unit 14 includes a first electrode 141, a photosensitive layer 142, and a second electrode 143 located on the base substrate 11 in sequence; wherein, the connection electrode layer 15 passes through the flat layer 13 through The hole communicates with the second electrode 143, so that the second electrode 143 of the light sensing unit 14 can share the connection electrode layer 15 connecting the auxiliary cathode and the cathode, avoiding the need for the light sensing unit 14 to be provided separately for the light sensing unit 14
  • the other electrode layers of the electrical signal and when the array substrate is applied to a large-size OLED display, can reduce the manufacturing process of the large-size OLED display and simplify the structure of the large-size OLED display.
  • a thin film transistor 12 corresponding to each light sensing unit 14 is provided between the base substrate 11 and the light sensing unit 14, wherein the source 127 or the drain of the thin film transistor 12
  • the pole 128 serves as the first electrode 141.
  • the source electrode 127 or the drain electrode 128 of the thin film transistor 12 serves as the first electrode 141 of the photosensitive sensor unit 14, which can further reduce the manufacturing process of the large-size OLED display and simplify the structure of the OLED display.
  • the thin film transistor 12 may specifically be a metal oxide thin film transistor, which may in turn include: a metal oxide semiconductor active layer 123 on the base substrate 11 and a gate on the metal oxide semiconductor active layer 123 Electrode insulating layer 124, gate 125 above gate insulating layer 124, interlayer dielectric layer 126 above gate 125, wherein between metal oxide semiconductor active layer 123 and base substrate 11 A buffer layer 122 is provided, and a light shielding layer 121 can also be provided between the buffer layer 122 and the base substrate 11, and the orthographic projection of the light shielding layer 121 on the base substrate 11 can cover the metal oxide semiconductor active layer 123 on the base substrate 11 Orthographic projection.
  • the specific base substrate 11 may be a glass substrate.
  • an auxiliary cathode 16 is provided between the flat layer 13 and the connection electrode layer 15, and a spacer 17 is provided between the auxiliary cathode 16 and the connection electrode layer 15, wherein the spacer 17
  • the orthographic projection on the base substrate 11 is smaller than the orthographic projection of the auxiliary cathode 16 on the base substrate, and the connection electrode layer 15 is connected to the auxiliary cathode 16.
  • the spacer 17 can be in direct contact with the auxiliary cathode 16, and the connection electrode layer 15 can be in direct contact with the spacer 17.
  • the connection electrode layer 15 is not in contact with the spacer 17 direct contact, it can also be in direct contact with the auxiliary cathode 16, so that the auxiliary cathode 16 is connected to the connection electrode layer 15, when the connection electrode layer 15 is connected to the cathode (not shown in FIG. 3), and finally can be realized
  • the auxiliary cathode 16 is connected to the cathode.
  • the material of the auxiliary cathode 16 may specifically be Mo/AlNd/Mo.
  • the flat layer 13 may specifically include a first flat layer 132, a second flat layer 133, and a passivation layer 131, the passivation layer 131 is located above the source and drain layers of the thin film transistor, and the first flat layer 132 may specifically be a resin A layer (Resin), located on the passivation layer 131, is used for preliminary flattening after the thin film transistor is manufactured; the second flat layer 133 may specifically be a transparent flat layer (Over Coat, OC), which is used for manufacturing the color resist film layer (Not shown in FIG. 3) after flattening.
  • a resin A layer located on the passivation layer 131
  • the second flat layer 133 may specifically be a transparent flat layer (Over Coat, OC), which is used for manufacturing the color resist film layer (Not shown in FIG. 3) after flattening.
  • the orthographic projection of the spacer 17 on the base substrate 11 and the orthographic projection of the photosensor 14 on the base substrate 11 do not overlap each other.
  • the orthographic projection of the spacer 17 on the base substrate 11 and the orthographic projection of the photosensitive sensor 14 on the base substrate 11 do not overlap each other, that is, the spacer 17 and the photosensitive sensor 14 are misaligned.
  • the light blocking of the photosensor 14 by the spacer 17 can be avoided, which may further cause the photosensor 14 to fail to detect the light-emitting unit of the light-emitting substrate normally.
  • the material of the second electrode layer 143 may be indium tin oxide; the material of the connection electrode layer 15 may be indium tin oxide.
  • an embodiment of the present disclosure also provides an electroluminescent panel, including the array substrate 1 as provided by the embodiment of the present disclosure, and further includes a light emitting substrate 2 disposed opposite to the array substrate 1 and having a plurality of light emitting units 22
  • a barrier wall 23 may be provided between adjacent light-emitting units 22 to separate the light-emitting units.
  • Each light-emitting unit 22 includes an anode layer 221, a light-emitting layer 222, and a cathode layer 223.
  • the cathode layer 223 is in contact with the connection electrode layer.
  • FIG. 4 is only a schematic diagram showing a partial structure of the array substrate, and the specific structure of the array substrate 1 may be shown in FIGS. 1 to 3.
  • the light-emitting substrate 2 may specifically include a driving thin film transistor (not shown in FIG. 4) on the base substrate in sequence, an anode layer 221 on the driving thin film transistor, a light-emitting layer 222 on the anode layer 221, The cathode layer 223 above the light emitting layer 222.
  • the light-emitting layer 222 can specifically emit white light, and the cathode layer 223 can be a whole-layer planar cathode.
  • the array substrate 1 can be specifically used as a packaging cover plate, and the array substrate 1 can also be specifically provided with a color resist film layer, and the color resist film layer can specifically include a red color resist unit 191, a green color resist unit 192, and a blue color resist unit 193, adjacent colors
  • a black matrix 18 is also provided between the resistance units.
  • the orthographic projections of the light sensing unit 14 and the black matrix 18 and the color resisting unit on the base substrate 11 do not completely overlap or overlap each other, so as to prevent the black matrix 18 or the color resisting unit from shading the light sensing unit 14 .
  • the light-emitting unit 22 and the light-sensing unit 14 are provided in a one-to-one correspondence.
  • the light-emitting units 22 and the light-sensing units 14 are provided in a one-to-one correspondence, which can detect whether the light emission of each light-emitting unit 22 is normal.
  • embodiments of the present disclosure also provide a display device, including the electroluminescent panel as provided by the embodiments of the present disclosure.
  • an embodiment of the present disclosure also provides a manufacturing method for manufacturing the array substrate provided by the embodiment of the present disclosure.
  • the manufacturing method includes:
  • Step S101 forming a plurality of light sensing units on the base substrate, wherein the light sensing units include a first electrode, a photosensitive layer, and a second electrode sequentially positioned on the base substrate.
  • Step S102 forming a flat layer on the light sensing unit.
  • Step S103 Etching the flat layer to form a via that exposes at least part of the second electrode.
  • Step S104 forming a connection electrode layer on the flat layer, wherein the connection electrode layer communicates with the second electrode layer through the via hole.
  • the manufacturing method further includes:
  • Step S1031 an auxiliary cathode is formed on the flat layer.
  • Step S1032 forming a spacer on the auxiliary cathode.
  • An array substrate provided by an embodiment of the present disclosure includes: a plurality of light sensing units on the base substrate, a flat layer on the light sensing units, and a connection electrode layer on the flat layer; wherein, each A light sensing unit includes a first electrode, a photosensitive layer, and a second electrode on the base substrate in sequence; wherein the connecting electrode layer communicates with the second electrode through a via penetrating through the flat layer, thereby enabling light sensing
  • the second electrode of the unit shares the connection electrode layer connecting the auxiliary cathode and the cathode, avoiding the need for the light sensing unit to be separately provided with other electrode layers providing electrical signals for the light sensing unit, and then applying the array substrate to a large-sized OLED display At this time, the manufacturing process of the large-size OLED display can be reduced, and the structure of the large-size OLED display can be simplified.

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Abstract

一种阵列基板、电致发光面板及显示装置，以解决现有技术的大尺寸OLED显示面板存在制作工序较多，结构较为复杂的问题。所述阵列基板，包括：衬底基板（11）、位于所述衬底基板（11）之上的多个光传感单元（14）、位于所述光传感单元（14）之上的平坦层（13）、以及位于所述平坦层（13）之上的连接电极层（15）；其中，每一所述光传感单元（14）包括依次位于所述衬底基板（11）之上的第一电极（141）、光敏层（142）、以及第二电极（143）；其中，所述连接电极层（15）通过贯穿所述平坦层（13）的过孔与所述第二电极（143）连通。

Description

阵列基板、电致发光面板及显示装置
相关申请的交叉引用
本公开要求在2019年01月04日提交中国专利局、申请号为201910008069.1、申请名称为“一种阵列基板、电致发光面板及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及半导体技术领域，尤其涉及一种阵列基板、电致发光面板及显示装置。
背景技术
平面显示器(F1at Pane1Disp1ay，FPD)己成为市场上的主流产品，平面显示器的种类也越来越多，如液晶显示器(Liquid Crysta1Disp1ay，LCD)、有机发光二极管(Organic Light Emitted Diode，OLED)显示器、等离子体显示面板(P1asma Disp1ay Pane1，PDP)及场发射显示器(Field Emission Display，FED)等。
发明内容
本公开实施例提供一种阵列基板，包括：衬底基板、位于所述衬底基板之上的多个光传感单元、位于所述光传感单元之上的平坦层、以及位于所述平坦层之上的连接电极层；其中，
每一所述光传感单元包括依次位于所述衬底基板之上的第一电极、光敏层、以及第二电极；其中，所述连接电极层通过贯穿所述平坦层的过孔与所述第二电极连通。
在一种可能的实施方式中，所述衬底基板与所述光传感单元之间设置有与每一所述光传感单元对应的薄膜晶体管，其中，所述薄膜晶体管的源极或 漏极作为所述第一电极。
在一种可能的实施方式中，所述平坦层与所述连接电极层之间设置有辅助阴极，所述连接电极层连接所述辅助阴极。
在一种可能的实施方式中，所述辅助阴极与所述连接电极层之间设置有隔垫物。
在一种可能的实施方式中，所述隔垫物在所述衬底基板上的正投影小于所述辅助阴极在所述衬底基板上的正投影。
在一种可能的实施方式中，所述隔垫物在所述衬底基板上的正投影与所述光敏传感器在所述衬底基板上的正投影彼此不交叠。
在一种可能的实施方式中，所述第二电极层的材质为氧化铟锡；所述连接电极层的材质为氧化铟锡。
本公开实施例还提供一种电致发光面板，包括如本公开实施例提供的所述阵列基板，还包括与所述阵列基板相对设置且具有多个发光单元的发光基板，其中，每一所述发光单元包括阳极层、发光层以及阴极层，所述阴极层与所述连接电极层接触。
在一种可能的实施方式中，所述发光单元与所述光传感单元一一对应设置。
本公开实施例还提供一种显示装置，包括如本公开实施例提供的所述电致发光面板。
附图说明
图1为本公开实施例提供的一种阵列基板的结构示意图；
图2为本公开实施例提供的一种设置有薄膜晶体管的阵列基板的结构示意图；
图3为本公开实施例提供的一种设置有辅助阴极以及隔垫物的阵列基板的结构示意图；
图4为本公开实施例提供的一种显示装置的结构示意图；
图5为本公开实施例提供的一种阵列基板的制作流程示意图；
图6为本公开实施例提供的一种具体的阵列基板的制作流程示意图。
具体实施方式
在大尺寸OLED显示器中，为了可以对每个像素单元进行光补偿，在与每一像素单元对应的位置设置有光传感器，而为了降低阴极的压降(IR drop)，通常还需要制作辅助阴极，该辅助阴极还需要通过连接电极层与阴极连接，即，相关技术的大尺寸OLED显示面板存在制作工序较多，结构较为复杂的问题。
为了使得本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
为了保持本公开实施例的以下说明清楚且简明，本公开省略了已知功能和已知部件的详细说明。
参见图1，本公开实施例提供一种阵列基板，包括：衬底基板11、位于衬底基板11之上的多个光传感单元14、位于光传感单元14之上的平坦层13、 以及位于平坦层13之上的连接电极层15；其中，
每一光传感单元14包括依次位于衬底基板11之上的第一电极141、光敏层142、以及第二电极143；其中，连接电极层15通过贯穿平坦层13的过孔与第二电极143连通。光敏层142具体可以为PIN结构。
本公开实施例提供的阵列基板，包括：位于衬底基板11之上的多个光传感单元14、位于光传感单元14之上的平坦层13、以及位于平坦层13之上的连接电极层15；其中，每一光传感单元14包括依次位于衬底基板11之上的第一电极141、光敏层142、以及第二电极143；其中，连接电极层15通过贯穿平坦层13的过孔与第二电极143连通，进而可以使光传感单元14的第二电极143共用连接辅助阴极与阴极的连接电极层15，避免光传感单元14需要单独设置为该光传感单元14提供电信号的其它电极层，进而在将该阵列基板应用于大尺寸OLED显示器时，可以减少大尺寸OLED显示器的制作工序，简化大尺寸OLED显示器的结构。
在具体实施时，参见图2所示，衬底基板11与光传感单元14之间设置有与每一光传感单元14对应的薄膜晶体管12，其中，薄膜晶体管12的源极127或漏极128作为第一电极141。本公开实施例中，薄膜晶体管12的源极127或漏极128作为光敏传感单元14的第一电极141，可以进一步减少大尺寸OLED显示器的制作工序，简化OLED显示器的结构。对于薄膜晶体管12，其具体可以是金属氧化物薄膜晶体管，具体可以依次包括：位于衬底基板11之上的金属氧化物半导体有源层123、位于金属氧化物半导体有源层123之上的栅极绝缘层124、位于栅极绝缘层124之上的栅极125、位于栅极125之上的层间介质层126，其中，金属氧化物半导体有源层123与衬底基板11之间还可以设置缓冲层122，缓冲层122与衬底基板11之间还可以设置遮光层121，遮光层121在衬底基板11上的正投影可以覆盖金属氧化物半导体有源层123在衬底基板上11的正投影。具体的衬底基板11可以为玻璃基板。
在具体实施时，参见图3所示，平坦层13与连接电极层15之间设置有辅助阴极16，辅助阴极16与连接电极层15之间设置有隔垫物17，其中，隔 垫物17在衬底基板11上的正投影小于辅助阴极16在衬底基板上的正投影，连接电极层15连接辅助阴极16。隔垫物17可以与辅助阴极16直接接触，连接电极层15可以与隔垫物17直接接触，由于隔垫物17的投影面积小于辅助阴极16的投影面积，连接电极层15除与隔垫物17直接接触外，还可以与辅助阴极16直接接触，进而实现将辅助阴极16与连接电极层15连接，在连接电极层15与阴极(图3中未示出)连接时，进而可以最终实现将辅助阴极16与阴极连接。辅助阴极16的材质具体可以为Mo/AlNd/Mo。具体的，平坦层13具体可以包括第一平坦层132、第二平坦层133以及钝化层131，钝化层131位于薄膜晶体管的源漏极层之上，第一平坦层132具体可以为树脂层(Resin)，位于钝化层131之上，用于对制作完成薄膜晶体管后进行初步平坦；第二平坦层133具体可以为透明平坦层(Over Coat，OC)，对制作完成色阻膜层(图3中未示出)后进行平坦。
在具体实施时，结合图3所示，隔垫物17在衬底基板11上的正投影与光敏传感器14在衬底基板11上的正投影彼此不交叠。本公开实施例中，隔垫物17在衬底基板11上的正投影与光敏传感器14在衬底基板11上的正投影彼此不交叠，即，隔垫物17与光敏传感器14错位设置，进而在将阵列基板与发光基板相对设置时，可以避免隔垫物17对光敏传感器14的挡光，进而可能导致光敏传感器14无法正常对发光基板的发光单元进行光检测。
在具体实施时，第二电极层143的材质可以为氧化铟锡；连接电极层15的材质可以为氧化铟锡。
参见图4所示，本公开实施例还提供一种电致发光面板，包括如本公开实施例提供的阵列基板1，还包括与阵列基板1相对设置且具有多个发光单元22的发光基板2，相邻发光单元22之间还可以设置有间隔各发光单元的挡墙23，其中，每一发光单元22包括阳极层221、发光层222以及阴极层223，阴极层223与连接电极层接触。需要说明的是，图4仅是示出了阵列基板的部分结构的示意图，阵列基板1的具体结构可以参见图1-图3所示。
发光基板2具体可以包括有依次位于衬底基板之上的驱动薄膜晶体管(图 4中未示出)、位于驱动薄膜晶体管之上的阳极层221、位于阳极层221之上的发光层222、位于发光层222之上的阴极层223。发光层222具体可以出射白光，阴极层223具体可以为一整层的面状阴极。阵列基板1具体可作为封装盖板，阵列基板1具体还可以设置有色阻膜层，色阻膜层具体可以包括红色色阻单元191、绿色色阻单元192以及蓝色色阻单元193，相邻色阻单元之间还设置有黑矩阵18。其中，光传感单元14与黑矩阵18以及色阻单元在衬底基板11上的正投影不完全重叠或彼此不交叠，以避免黑矩阵18或色阻单元对光传感单元14的遮光。
结合图4所示，发光单元22与光传感单元14一一对应设置。本公开实施例中，发光单元22与光传感单元14一一对应设置，可以实现对每一发光单元22的发光是否正常进行检测。
基于同一发明构思，本公开实施例还提供一种显示装置，包括如本公开实施例提供的电致发光面板。
基于同一发明构思，本公开实施例还提供一种制作如本公开实施例提供的阵列基板的制作方法，参见图5所示，制作方法包括：
步骤S101、在衬底基板之上形成多个光传感单元，其中，光传感单元包括依次位于衬底基板之上的第一电极、光敏层、以及第二电极。
步骤S102、在光传感单元之上形成平坦层。
步骤S103、刻蚀平坦层，形成暴露至少部分第二电极的过孔。
步骤S104、在平坦层之上形成连接电极层，其中，连接电极层通过过孔与第二电极层连通。
在一种可能的实施方式中，参见图6所示，在平坦层之上形成连接电极层之前，制作方法还包括：
步骤S1031、在平坦层之上形成辅助阴极。
步骤S1032、在辅助阴极之上形成隔垫物。
本公开实施例提供的阵列基板，包括：位于衬底基板之上的多个光传感单元、位于光传感单元之上的平坦层、以及位于平坦层之上的连接电极层； 其中，每一光传感单元包括依次位于衬底基板之上的第一电极、光敏层、以及第二电极；其中，连接电极层通过贯穿平坦层的过孔与第二电极连通，进而可以使光传感单元的第二电极共用连接辅助阴极与阴极的连接电极层，避免光传感单元需要单独设置为该光传感单元提供电信号的其它电极层，进而在将该阵列基板应用于大尺寸OLED显示器时，可以减少大尺寸OLED显示器的制作工序，简化大尺寸OLED显示器的结构。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (10)

  1. 一种阵列基板，其中，包括：衬底基板、位于所述衬底基板之上的多个光传感单元、位于所述光传感单元之上的平坦层、以及位于所述平坦层之上的连接电极层；其中，
    每一所述光传感单元包括依次位于所述衬底基板之上的第一电极、光敏层、以及第二电极；其中，所述连接电极层通过贯穿所述平坦层的过孔与所述第二电极连通。
  2. 如权利要求1所述的阵列基板，其中，所述衬底基板与所述光传感单元之间设置有与每一所述光传感单元对应的薄膜晶体管，其中，所述薄膜晶体管的源极或漏极作为所述第一电极。
  3. 如权利要求1所述的阵列基板，其中，所述平坦层与所述连接电极层之间设置有辅助阴极，所述连接电极层连接所述辅助阴极。
  4. 如权利要求3所述的阵列基板，其中，所述辅助阴极与所述连接电极层之间设置有隔垫物。
  5. 如权利要求4所述的阵列基板，其中，所述隔垫物在所述衬底基板上的正投影小于所述辅助阴极在所述衬底基板上的正投影。
  6. 如权利要求4所述的阵列基板，其中，所述隔垫物在所述衬底基板上的正投影与所述光敏传感器在所述衬底基板上的正投影彼此不交叠。
  7. 如权利要求1所述的阵列基板，其中，所述第二电极层的材质为氧化铟锡；所述连接电极层的材质为氧化铟锡。
  8. 一种电致发光面板，其中，包括如权利要求1-7任一项所述的阵列基板，还包括与所述阵列基板相对设置且具有多个发光单元的发光基板，其中，每一所述发光单元包括阳极层、发光层以及阴极层，所述阴极层与所述连接电极层接触。
  9. 如权利要求8所述的电致发光面板，其中，所述发光单元与所述光传感单元一一对应设置。
  10. 一种显示装置，其中，包括如权利要求8或9所述的电致发光面板。
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