WO2020140579A9 - 滤波天线器件 - Google Patents

滤波天线器件 Download PDF

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Publication number
WO2020140579A9
WO2020140579A9 PCT/CN2019/113376 CN2019113376W WO2020140579A9 WO 2020140579 A9 WO2020140579 A9 WO 2020140579A9 CN 2019113376 W CN2019113376 W CN 2019113376W WO 2020140579 A9 WO2020140579 A9 WO 2020140579A9
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WIPO (PCT)
Prior art keywords
metal layer
dielectric substrate
resonant cavity
antenna device
coplanar waveguide
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PCT/CN2019/113376
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English (en)
French (fr)
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WO2020140579A1 (zh
Inventor
买剑春
邾志民
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瑞声声学科技(深圳)有限公司
瑞声科技（南京）有限公司
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Publication of WO2020140579A1 publication Critical patent/WO2020140579A1/zh
Publication of WO2020140579A9 publication Critical patent/WO2020140579A9/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H01P1/20309—Strip line filters with dielectric resonator
    • H01P1/20318—Strip line filters with dielectric resonator with dielectric resonators as non-metallised opposite openings in the metallised surfaces of a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2088—Integrated in a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means

Definitions

  • the invention relates to the field of microwave communication, in particular to a filter antenna device used in the field of communication electronic products.
  • the filter antenna of the related art does not have a structure to resist out-of-band spurious signals, cannot well suppress out-of-band spurious signals, and is easily interfered by surface waves, which reduces the working efficiency of the filter antenna.
  • the technical problem to be solved by the present invention is to provide a filter antenna device that can suppress the interference of out-of-band spurious signals and can effectively reduce the surface wave loss.
  • the present invention provides a filter antenna device, including a SIW filter structure and a SIW radiating structure cascaded with the SIW filter structure, and the SIW filter structure includes a first resonator stacked up and down and connected Cavity and a second resonant cavity, the SIW radiating structure includes a back cavity that is arranged side by side with the first resonant cavity and the second resonant cavity and communicated with and a metal patch accommodated in the back cavity, the filter The antenna device also includes a feed port and a first coplanar waveguide disposed on the side of the first resonant cavity away from the back cavity, and a second coplanar waveguide disposed on the side of the second resonant cavity close to the back cavity.
  • the SIW filter structure includes a first dielectric substrate and a second dielectric substrate stacked one above the other, a first metal layer covering the surface of the first dielectric substrate away from the second dielectric substrate, and The second metal layer on the surface of the second dielectric substrate away from the first dielectric substrate, the third metal layer sandwiched between the first dielectric substrate and the second dielectric substrate, a plurality of spaces arranged and penetrated
  • the first metalized through holes of the first dielectric substrate and a plurality of second metalized through holes that are spaced apart and penetrate through the second dielectric substrate, and the plurality of first metalized through holes are along the first dielectric substrate
  • the periphery of the substrate is arranged and electrically connected to the first metal layer and the third metal layer, and the plurality of second metallized through holes are arranged along the periphery of the second dielectric substrate and are electrically connected to the second metal Layer and the third metal layer, the first metal layer, the third metal layer, and the first metallized through hole together form the first resonant cavity
  • the fourth metal layer and the first metal layer are on the same plane, and the fifth metal layer and the second metal layer are on the same plane.
  • the first coplanar waveguide is arranged in the first metal layer and extends from the feed port in a direction close to the back cavity, and the second coplanar waveguide is arranged on the second metal layer And have the same extension direction as the first coplanar waveguide.
  • a radiation window is opened in the center of the fourth metal layer, the metal patch is arranged in the radiation window, the transmission line is opened in the fifth metal layer, and the probe penetrates the third medium
  • the substrate is electrically connected to the metal patch and the transmission line.
  • the second coplanar waveguide includes a central conductor strip and conductor planes located on both sides of the central conductor strip, and the transmission line is connected to the central conductor strip.
  • the third metal layer is provided with two coupling gaps arranged at intervals, and the first resonant cavity and the second resonant cavity are connected through the coupling gap.
  • the coupling gap has a rectangular shape and is separately provided on two sides of the first coplanar waveguide.
  • the penetrating first metalized through hole and the second metalized through hole are integrally formed.
  • the filter antenna device of the present invention is provided with the back cavity in the SIW radiating structure, and the metal patch is arranged in the back cavity, because the back cavity can effectively The surface wave is suppressed, thereby effectively reducing the surface wave loss of the metal patch, and by setting the SIW filter structure cascaded with the SIW radiation structure, the interference of out-of-band spurious signals can be suppressed.
  • FIG. 1 is a three-dimensional schematic diagram of the overall structure of a filter antenna device provided by the present invention
  • FIG. 2 is a schematic diagram of an exploded structure of a part of the structure of the filter antenna device provided by the present invention
  • Figure 3 is a cross-sectional view of the filter antenna device shown in Figure 1 along line A-A;
  • Fig. 4 is a reflection coefficient diagram of the filter antenna device provided by the present invention.
  • Figure 5 is a diagram of the overall efficiency of the filter antenna device provided by the present invention.
  • Fig. 6 is a gain diagram of the filter antenna device provided by the present invention.
  • the present invention provides a filter antenna device 100 including a SIW filter structure 10 and a SIW radiating structure 30 cascaded with the SIW filter structure 10.
  • the SIW filter structure 10 includes a first resonant cavity 11 and a second resonant cavity 12 that are stacked on top of each other and communicated.
  • the SIW radiating structure 30 includes a back cavity 31 that is arranged side by side and communicated with the first resonant cavity 11 and the second resonant cavity 12 and a metal patch 32 contained in the back cavity 31.
  • the filter antenna device 100 also includes a feed port 50 and a first coplanar waveguide 60 disposed on the side of the first resonant cavity 11 away from the back cavity 31, and a first coplanar waveguide 60 disposed close to the second resonant cavity 12.
  • the second coplanar waveguide 70 on one side of the back cavity 31, the transmission line 80 disposed in the back cavity 31 and connected to one end of the second coplanar waveguide 70, and the transmission line 80 and the metal sticker are connected The probe 90 of the piece 32.
  • One end of the first coplanar waveguide 60 is connected to the feeding port 50, and the other end is opposite to the end of the second coplanar waveguide 70 away from the transmission line 80.
  • the back cavity 31 can effectively suppress surface waves, thereby effectively reducing the surface wave loss of the metal patch 32; by providing the SIW filter structure 10 cascaded with the SIW radiating structure 30, Effectively suppress the interference of out-of-band spurious signals.
  • the SIW filter structure 10 includes a first dielectric substrate 13 and a second dielectric substrate 14 stacked one above the other, and a first metal layer covering the surface of the first dielectric substrate 13 away from the second dielectric substrate 14. 15 and the second metal layer 16 covering the surface of the second dielectric substrate 14 away from the first dielectric substrate 13, and the second metal layer 16 sandwiched between the first dielectric substrate 13 and the second dielectric substrate 14.
  • the first dielectric substrate 13 and the second dielectric substrate 14 are both rectangular, and both the first dielectric substrate 13 and the second dielectric substrate 14 adopt LTCC (low temperature common Fired ceramics) as the main material.
  • LTCC low temperature common Fired ceramics
  • a plurality of the first metallization through holes 18 are arranged along the periphery of the first dielectric substrate 13 and electrically connect the first metal layer 15 and the third metal layer 17, and a plurality of the second metallization
  • the through holes 19 are arranged along the periphery of the second dielectric substrate 14 and electrically connect the second metal layer 16 and the third metal layer 17.
  • the first metal layer 15, the third metal layer 17 and the first metallized through hole 18 together form the first resonant cavity 11, the second metal layer 16, the third metal layer 17 and the second metallized through hole 19 jointly enclose the second resonant cavity 12.
  • the third metal layer 17 is provided with two coupling gaps 171 arranged at intervals, and the first resonant cavity 11 and the second resonant cavity 12 are connected through the coupling gaps 171.
  • the present invention does not limit the shape of the coupling gap 171.
  • the coupling gap 171 can be rectangular, square, circular, etc.
  • the coupling gap 171 is rectangular, and is arranged separately. The two sides of the first coplanar waveguide 60 are described.
  • the first coplanar waveguide 60 is disposed in the first metal layer 15 and extends from the feed port 50 in a direction close to the back cavity 31, and the second coplanar waveguide 70 is disposed in the The second metal layer 16 has the same extending direction as the first coplanar waveguide 60.
  • the second coplanar waveguide 70 includes a central conductor strip 71 and a conductor plane 73 located on both sides of the central conductor strip 71, and the transmission line 80 is connected to the central conductor strip 71.
  • the penetrating first metalized through hole 18 and the second metalized through hole 19 are integrally formed.
  • the SIW radiation structure 30 includes a third dielectric substrate 33 arranged side by side with the first dielectric substrate 13 and the second dielectric substrate 14, and a fourth metal layer 34 covering two opposite surfaces of the third dielectric substrate 33 And the fifth metal layer 35 and a plurality of third metallized through holes 36 spaced apart and penetrated through the third dielectric substrate 33.
  • the plurality of third metallized through holes 36 are arranged along the periphery of the third dielectric substrate 33 and electrically connect the fourth metal layer 34 and the fifth metal layer 35, and the fourth metal layer 34.
  • the fifth metal layer 35 and the plurality of third metallized through holes 36 jointly enclose the back cavity 31.
  • the fourth metal layer 34 and the first metal layer 15 are on the same plane, and the fifth metal layer 35 and the second metal layer 16 are on the same plane.
  • a radiation window 341 is opened in the center of the fourth metal layer 34, the metal patch 32 is arranged in the radiation window 341, the transmission line 80 is opened in the fifth metal layer 35, and the probe 90 penetrates the
  • the third dielectric substrate 33 is electrically connected to the metal patch 32 and the transmission line 80.
  • the performance of the filter antenna device 100 provided by the present invention is shown in Figures 4-6. With reference to Figures 4 to 6, it can be seen from the figures that the filter antenna device 100 provided by the present invention optimizes the filter antenna scheme in a compact environment, and effectively reduces the loss of surface waves by suppressing the interference of out-of-band spurious signals. .
  • the filter antenna device 100 of the present invention provides the back cavity 31 in the SIW filter structure 10 and the metal patch 31 in the back cavity.
  • the cavity 31 can effectively suppress surface waves, thereby effectively reducing the surface wave loss of the metal patch 31, and the cascaded SIW filter structure 10 arranged on the SIW radiating structure 30 can suppress out-of-band spurious signals Interference.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

本发明提供了一种滤波天线器件，包括SIW滤波结构和与SIW滤波结构级联的SIW辐射结构，SIW滤波结构包括上下层叠设置并相连通的第一谐振腔和第二谐振腔，SIW辐射结构包括与第一谐振腔及第二谐振腔并排设置且连通的背腔和收容于背腔内的金属贴片，滤波天线器件还包括设置于第一谐振腔的远离背腔一侧的馈电端口及第一共面波导、设置于第二谐振腔的靠近背腔一侧的第二共面波导、设置于背腔内且与第二共面波导的一端连接的传输线及连接传输线与金属贴片的探针，第一共面波导一端与馈电端口连接，另一端与第二共面波导远离传输线的端部相对设置。与相关技术相比，本发明提供的滤波天线器件能抑制带外杂散信号的干扰，有效降低表面波损耗。

Description

滤波天线器件 技术领域
本发明涉及微波通信领域，尤其涉及一种运用在通讯电子产品领域的滤波天线器件。
 背景技术
随着无线通信系统的高速发展，无线通讯终端在功能强大的同时，尺寸却越来越小，因此像巴伦滤波器、功分滤波器、滤波天线等等的多功能组件设计逐渐成为必然趋势。将天线和滤波器集成在一起可以有效降低系统的损耗、提高系统的效率且能缩小系统的尺寸。
然而，相关技术的滤波天线并不具备抵御带外杂散信号的结构，不能够很好的抑制带外杂散信号，并容易受到表面波的干扰，降低滤波天线的工作效率。
因此，有必要提供一种新的滤波天线器件来解决上述问题。
 技术问题
本发明要解决的技术问题是提供一种能抑制带外杂散信号的干扰，能有效降低表面波损耗的滤波天线器件。
 技术解决方案
为解决上述技术问题，本发明提供了一种滤波天线器件，包括SIW滤波结构和与所述SIW滤波结构级联的SIW辐射结构，所述SIW滤波结构包括上下层叠设置并相连通的第一谐振腔和第二谐振腔，所述SIW辐射结构包括与所述第一谐振腔及所述第二谐振腔并排设置且连通的背腔和收容于所述背腔内的金属贴片，所述滤波天线器件还包括设置于所述第一谐振腔的远离所述背腔一侧的馈电端口及第一共面波导、设置于所述第二谐振腔的靠近所述背腔一侧的第二共面波导、设置于所述背腔内且与所述第二共面波导的一端连接的传输线及连接所述传输线与所述金属贴片的探针，所述第一共面波导一端与所述馈电端口连接，另一端与所述第二共面波导远离所述传输线的端部相对设置。
优选的，所述SIW滤波结构包括上下层叠设置的第一介质基板和第二介质基板、覆于所述第一介质基板远离所述第二介质基板的表面的第一金属层和覆于所述第二介质基板远离所述第一介质基板的表面的第二金属层、夹设于所述第一介质基板和所述第二介质基板之间的第三金属层、多个间隔设置且贯穿所述第一介质基板的第一金属化通孔及多个间隔设置且贯穿所述第二介质基板的第二金属化通孔，多个所述第一金属化通孔沿所述第一介质基板的周缘排布且电连接所述第一金属层和所述第三金属层，多个所述第二金属化通孔沿所述第二介质基板的周缘排布且电连接所述第二金属层和所述第三金属层，所述第一金属层、所述第三金属层及所述第一金属化通孔共同围成所述第一谐振腔，所述第二金属层、所述第三金属层及所述第二金属化通孔共同围成所述第二谐振腔，所述SIW辐射结构包括与所述第一介质基板和所述第二介质基板并排设置的第三介质基板、覆于所述第三介质基板相对两表面的第四金属层和第五金属层及多个间隔设置且贯穿所述第三介质基板的第三金属化通孔，多个所述第三金属化通孔沿所述第三介质基板的周缘排布且电连接所述第四金属层和所述第五金属层，所述第四金属层、所述第五金属层及多个所述第三金属化通孔共同围成所述背腔。
优选的，所述第四金属层与所述第一金属层处于同一平面，所述第五金属层与所述第二金属层处于同一平面。
优选的，所述第一共面波导设置于所述第一金属层内且自所述馈电端口向靠近所述背腔方向延伸，所述第二共面波导设置于所述第二金属层内且与所述第一共面波导具有相同的延伸方向。
优选的，所述第四金属层中心开设有辐射窗口，所述金属贴片设置于所述辐射窗口内，所述传输线开设于所述第五金属层，所述探针贯穿所述第三介质基板并电连接所述金属贴片和所述传输线。
优选的，所述第二共面波导包括中心导体带和位于所述中心导体带两侧的导体平面，所述传输线与所述中心导体带连接。
优选的，所述第三金属层开设有两间隔设置的耦合间隙，所述第一谐振腔与所述第二谐振腔通过所述耦合间隙连通。
优选的，所述耦合间隙呈矩形，且分设于所述第一共面波导的两侧。
优选的，贯通的所述第一金属化通孔和所述第二金属化通孔一体成型。
 有益效果
与相关技术相比，本发明的所述滤波天线器件通过在所述SIW辐射结构中设置所述背腔，并在所述背腔内设置所述金属贴片，因所述背腔能有效的抑制表面波，从而有效的降低了所述金属贴片的表面波损耗，且通过设置与SIW辐射结构级联的SIW滤波结构，能抑制带外杂散信号的干扰。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为本发明提供的滤波天线器件的整体结构的立体结构示意图；
图2为本发明提供的滤波天线器件的部分结构的分解结构示意图；
图3为图1所示的滤波天线器件沿A-A线的剖视图；
图4为本发明提供的滤波天线器件的反射系数图；
图5为本发明提供的滤波天线器件的总效率图；
图6为本发明提供的滤波天线器件的增益图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请结合参阅图1至图3，本发明提供了一种滤波天线器件100，包括SIW滤波结构10和与所述SIW滤波结构10级联的SIW辐射结构30。其中，所述SIW滤波结构10包括上下层叠设置并相连通的第一谐振腔11和第二谐振腔12。所述SIW辐射结构30包括与所述第一谐振腔11及所述第二谐振腔12并排设置且连通的背腔31和收容于所述背腔31内的金属贴片32。
需要说明的是，文中的“上下层叠设置”是指本发明的附图3中的位置关系，若所述滤波天线器件100的摆放状态发生改变，所述第一谐振腔11和所述第二谐振腔12的位置关系就不再是上下层叠设置。所述滤波天线器件100还包括设置于所述第一谐振腔11的远离所述背腔31一侧的馈电端口50及第一共面波导60、设置于所述第二谐振腔12的靠近所述背腔31一侧的第二共面波导70、设置于所述背腔31内且与所述第二共面波导70的一端连接的传输线80及连接所述传输线80与所述金属贴片32的探针90。所述第一共面波导60一端与所述馈电端口50连接，另一端与所述第二共面波导70远离所述传输线80的端部相对设置。
如此设计，因所述背腔31能有效的抑制表面波，从而有效的降低了所述金属贴片32的表面波损耗；通过设置与所述SIW辐射结构30级联的SIW滤波结构10，能有效抑制带外杂散信号的干扰。
具体的，所述SIW滤波结构10包括上下层叠设置的第一介质基板13和第二介质基板14、覆于所述第一介质基板13远离所述第二介质基板14的表面的第一金属层15和覆于所述第二介质基板14远离所述第一介质基板13的表面的第二金属层16、夹设于所述第一介质基板13和所述第二介质基板14之间的第三金属层17、多个间隔设置且贯穿所述第一介质基板13的第一金属化通孔18及多个间隔设置且贯穿所述第二介质基板14的第二金属化通孔19。
优选的，在本实施方式中，所述第一介质基板13和所述第二介质基板14均呈矩形，且所述第一介质基板13和所述第二介质基板14均采用LTCC（低温共烧陶瓷）作为其主体的材料。
多个所述第一金属化通孔18沿所述第一介质基板13的周缘排布且电连接所述第一金属层15和所述第三金属层17，多个所述第二金属化通孔19沿所述第二介质基板14的周缘排布且电连接所述第二金属层16和所述第三金属层17。所述第一金属层15、所述第三金属层17及所述第一金属化通孔18共同围成所述第一谐振腔11，所述第二金属层16、所述第三金属层17及所述第二金属化通孔19共同围成所述第二谐振腔12。
具体的，所述第三金属层17开设有两间隔设置的耦合间隙171，所述第一谐振腔11与所述第二谐振腔12通过所述耦合间隙171连通。
优选的，本发明对所述耦合间隙171的形状不做限定，所述耦合间隙171可以为矩形、方形、圆形等，在本实施方式中，所述耦合间隙171呈矩形，且分设于所述第一共面波导60的两侧。
具体的，所述第一共面波导60设置于所述第一金属层15内且自所述馈电端口50向靠近所述背腔31方向延伸，所述第二共面波导70设置于所述第二金属层16内且与所述第一共面波导60具有相同的延伸方向。
具体的，所述第二共面波导70包括中心导体带71和位于所述中心导体带71两侧的导体平面73，所述传输线80与所述中心导体带71连接。
优选的，贯通的所述第一金属化通孔18和所述第二金属化通孔19一体成型。
所述SIW辐射结构30包括与所述第一介质基板13和所述第二介质基板14并排设置的第三介质基板33、覆于所述第三介质基板33相对两表面的第四金属层34和第五金属层35及多个间隔设置且贯穿所述第三介质基板33的第三金属化通孔36。
其中，多个所述第三金属化通孔36沿所述第三介质基板33的周缘排布且电连接所述第四金属层34和所述第五金属层35，所述第四金属层34、所述第五金属层35及多个所述第三金属化通孔36共同围成所述背腔31。
优选的，所述第四金属层34与所述第一金属层15处于同一平面，所述第五金属层35与所述第二金属层16处于同一平面。
所述第四金属层34中心开设有辐射窗口341，所述金属贴片32设置于所述辐射窗口341内，所述传输线80开设于所述第五金属层35，所述探针90贯穿所述第三介质基板33并电连接所述金属贴片32和所述传输线80。
本发明提供的滤波天线器件100的性能如图4-6所示。结合参阅图4至图6，由图可知，本发明提供的所述滤波天线器件100在紧凑环境下对滤波天线方案进行了优化，通过抑制带外杂散信号的干扰有效降低了表面波的损耗。
与相关技术相比，本发明的所述滤波天线器件100通过在所述SIW滤波结构10中设置所述背腔31，并在所述背腔内设置所述金属贴片31，因所述背腔31能有效的抑制表面波，从而有效的降低了所述金属贴片31的表面波损耗，且通过设置于所述SIW辐射结构30级联的SIW滤波结构10，能抑制带外杂散信号的干扰。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (9)

  1. 一种滤波天线器件，包括SIW滤波结构和与所述SIW滤波结构级联的SIW辐射结构，其特征在于，所述SIW滤波结构包括上下层叠设置并相连通的第一谐振腔和第二谐振腔，所述SIW辐射结构包括与所述第一谐振腔及所述第二谐振腔并排设置且连通的背腔和收容于所述背腔内的金属贴片，所述滤波天线器件还包括设置于所述第一谐振腔的远离所述背腔一侧的馈电端口及第一共面波导、设置于所述第二谐振腔的靠近所述背腔一侧的第二共面波导、设置于所述背腔内且与所述第二共面波导的一端连接的传输线及连接所述传输线与所述金属贴片的探针，所述第一共面波导一端与所述馈电端口连接，另一端与所述第二共面波导远离所述传输线的端部相对设置。
  2. 根据权利要求1所述的滤波天线器件，其特征在于，所述SIW滤波结构包括上下层叠设置的第一介质基板和第二介质基板、覆于所述第一介质基板远离所述第二介质基板的表面的第一金属层和覆于所述第二介质基板远离所述第一介质基板的表面的第二金属层、夹设于所述第一介质基板和所述第二介质基板之间的第三金属层、多个间隔设置且贯穿所述第一介质基板的第一金属化通孔及多个间隔设置且贯穿所述第二介质基板的第二金属化通孔，多个所述第一金属化通孔沿所述第一介质基板的周缘排布且电连接所述第一金属层和所述第三金属层，多个所述第二金属化通孔沿所述第二介质基板的周缘排布且电连接所述第二金属层和所述第三金属层，所述第一金属层、所述第三金属层及所述第一金属化通孔共同围成所述第一谐振腔，所述第二金属层、所述第三金属层及所述第二金属化通孔共同围成所述第二谐振腔，所述SIW辐射结构包括与所述第一介质基板和所述第二介质基板并排设置的第三介质基板、覆于所述第三介质基板相对两表面的第四金属层和第五金属层及多个间隔设置且贯穿所述第三介质基板的第三金属化通孔，多个所述第三金属化通孔沿所述第三介质基板的周缘排布且电连接所述第四金属层和所述第五金属层，所述第四金属层、所述第五金属层及多个所述第三金属化通孔共同围成所述背腔。
  3. 根据权利要求2所述的滤波天线器件，其特征在于，所述第四金属层与所述第一金属层处于同一平面，所述第五金属层与所述第二金属层处于同一平面。
  4. 根据权利要求2所述的滤波天线器件，其特征在于，所述第一共面波导设置于所述第一金属层内且自所述馈电端口向靠近所述背腔方向延伸，所述第二共面波导设置于所述第二金属层内且与所述第一共面波导具有相同的延伸方向。
  5. 根据权利要求4所述的滤波天线器件，其特征在于，所述第四金属层中心开设有辐射窗口，所述金属贴片设置于所述辐射窗口内，所述传输线开设于所述第五金属层，所述探针贯穿所述第三介质基板并电连接所述金属贴片和所述传输线。
  6. 根据权利要求5所述的滤波天线器件，其特征在于，所述第二共面波导包括中心导体带和位于所述中心导体带两侧的导体平面，所述传输线与所述中心导体带连接。
  7. 根据权利要求5所述的滤波天线器件，其特征在于，所述第三金属层开设有两间隔设置的耦合间隙，所述第一谐振腔与所述第二谐振腔通过所述耦合间隙连通。
  8. 根据权利要求6所述的滤波天线器件，其特征在于，所述耦合间隙呈矩形，且分设于所述第一共面波导的两侧。
  9. 根据权利要求2所述的滤波天线器件，其特征在于，贯通的所述第一金属化通孔和所述第二金属化通孔一体成型。
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