WO2020138597A1 - Method for manufacturing multi-junction solar cell, and multi-junction solar cell manufactured by same - Google Patents

Method for manufacturing multi-junction solar cell, and multi-junction solar cell manufactured by same Download PDF

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WO2020138597A1
WO2020138597A1 PCT/KR2019/004862 KR2019004862W WO2020138597A1 WO 2020138597 A1 WO2020138597 A1 WO 2020138597A1 KR 2019004862 W KR2019004862 W KR 2019004862W WO 2020138597 A1 WO2020138597 A1 WO 2020138597A1
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solar cell
junction
junction solar
tunnel junction
substrate
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PCT/KR2019/004862
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French (fr)
Korean (ko)
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정상현
강호관
김창주
신현범
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(재)한국나노기술원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method of manufacturing a multi-junction solar cell and a multi-junction solar cell manufactured thereby, by applying a tunnel junction structure as a recombination layer instead of a transparent electrode and a metal electrode, improving transmittance and electrical conductivity to improve solar cell efficiency. It was improved.
  • These solar cells are the core elements of photovoltaic power generation, and are devices that convert photovoltaic energy directly into electrical energy by using photovoltaic effects, to improve conversion efficiency and reduce manufacturing costs. I am researching the structure.
  • the III-V compound semiconductor solar cell has the advantage of high efficiency because it can be a multi-junction solar cell.
  • the III-V compound semiconductor multi-junction solar cell has a disadvantage of low economic efficiency due to high power generation cost because of the need for a high substrate price and a device for condensing.
  • a recombination layer is required between sub-cells, and a transparent electrode (FIG. 1(a)) or a patterned metal electrode (FIG. 1(b)) is used.
  • the efficiency of the solar cell decreases due to a decrease in transmittance due to diffuse reflection caused by a difference in refractive index between the unit solar cell and the transparent electrode material.
  • an additional process of depositing an anti-reflection coating (ARC) material between the solar cell and the transparent electrode is required.
  • ARC anti-reflection coating
  • the material used as a transparent electrode has a lower electrical conductivity than a typical metal material, thereby increasing the resistance of the solar cell, causing a decrease in solar cell efficiency.
  • a metal electrode patterned as a recombination layer as shown in FIG. 1(b) when using a metal electrode patterned as a recombination layer as shown in FIG. 1(b), a patterned metal electrode process that is aligned between unit solar cells is additionally required, and shadow loss occurs by the patterned metal electrode. Thus, the efficiency of the solar cell is reduced.
  • the present invention was devised by the necessity, and a method for manufacturing a multi-junction solar cell that improves solar cell efficiency by improving the transmittance and electrical conductivity by applying a tunnel junction structure as a recombination layer instead of a transparent electrode and a metal electrode, and manufacturing the same
  • the purpose is to provide a multi-junction solar cell.
  • the present invention in a method of manufacturing a multi-junction solar cell, a first step of forming a light absorbing layer on the epi growth substrate and a second step of forming a back electrode on the light absorbing layer. , A third step of removing the epitaxial growth substrate from the light absorption layer and a fourth step of forming a front electrode on the light absorption layer on the side where the epitaxial growth substrate is removed, wherein the light absorption layers have different absorptions.
  • each subcell is a tunnel junction (Tunnel junction) multi-junction solar cell manufacturing method characterized in that to form a multi-junction and the multiple produced by this
  • the junction solar cell is a technical point.
  • the subcell is preferably arranged to absorb light of a long wavelength at a short wavelength from a direction in which light is incident.
  • the tunnel junction is composed of a junction of p-type and n-type semiconductor materials, and using Al x Ga y In z As or Al x Ga y In z P materials (0 ⁇ x, y, z ⁇ 1, wherein at least one of x, y, and z is non-zero) is preferred.
  • the doping concentration of the semiconductor material forming the tunnel junction is preferably 1 ⁇ 10 19 cm -3 to 1 ⁇ 10 22 cm -3 , and the thickness of the semiconductor material forming the tunnel junction is 10 nm to 100 nm. do.
  • the band gap of the semiconductor material forming the tunnel junction is characterized in that it is relatively larger than the band gap of the sub-cell located under the tunnel junction.
  • the light absorbing layer it is preferable to first form a sacrificial layer on the epi growth substrate.
  • the multi-junction solar cell may be transferred to a heterogeneous substrate, and the heterogeneous substrate may be formed of a rigid or flexible material.
  • the heterogeneous substrate may be formed of a rigid or flexible material.
  • any one of silicon, glass, quartz, metal foil, and plastic film can be used.
  • the present invention uses a tunnel junction structure instead of a transparent electrode or a metal electrode between sub-cells in a multi-junction solar cell to improve transmittance and electrical conductivity to improve the multi-junction solar cell. It has the effect of improving efficiency.
  • the output voltage of the multi-junction solar cell is higher than that of the conventional single-junction solar cell, it is easy to match the rated voltage of the applied product, and the number of series connections can be reduced, thereby increasing the efficiency of the entire module.
  • a multi-junction solar cell on a heterogeneous substrate, it can be used in various ways depending on the purpose or use, and a multi-junction solar cell structure can be realized by delivering a multi-junction solar cell to a transparent flexible substrate, for example, regardless of the type of the final substrate. Therefore, by providing a transparent flexible solar cell, its utilization is expected to be excellent.
  • heterogeneous solar cells ie, III-V compound semiconductor solar cells, as well as heterogeneous subcells such as silicon, perovskite, CIGS, and organic materials are combined, and a tunnel junction structure is formed between each subcell. It is expected to be competitive in the heterogeneous multi-junction solar cell market, which is expected to come after the silicon solar cell market by realizing heterogeneous multi-junction solar cells by solving the problems of low permeability and low electrical conductivity by forming, and the possibility of practical use is very high. do.
  • heterogeneous multi-junction solar cells is expected to be a driving force of the national economy by creating high added value and creating employment in various industries including the power generation device industry.
  • FIG. 1 Figure 2-schematic diagram for a method of manufacturing a multi-junction solar cell according to the present invention.
  • the present invention uses a tunnel junction structure instead of a transparent electrode or a metal electrode between sub-cells in a multi-junction solar cell to improve transmittance and conductivity to improve the efficiency of the multi-junction solar cell. Is to improve.
  • FIG. 2 is a schematic view of a method of manufacturing a multi-junction solar cell according to the present invention
  • FIG. 3 is a schematic view of a multi-junction solar cell according to the present invention
  • FIG. 4 is a tunnel junction structure according to an embodiment of the present invention. It shows the electron micrograph of the containing subcell.
  • the manufacturing method of a multi-junction solar cell in the manufacturing method of a multi-junction solar cell, a first step of forming a light absorbing layer 20 on the substrate 10 for epi growth, and The second step of forming the back electrode 40 on the light absorbing layer 20, and the third step of removing the epitaxial growth substrate 10 from the light absorbing layer 20 and the epitaxial growth substrate 10 Including the fourth step of forming the front electrode 50 on the light absorbing layer 20 of the removed side, the light absorbing layer 20 has N subcells having different absorption wavelengths (N is a natural number of 2 or more ) 22, and each subcell 22 is tunnel junction 30 to form multiple junctions.
  • N is a natural number of 2 or more
  • the method of manufacturing a multi-junction solar cell according to the present invention is to form a light absorbing layer 20 on the substrate 10 for epi growth, as shown in FIG. 2 (first step, FIG. 2(a)). ).
  • the epitaxial growth substrate 10 uses a substrate having a similar lattice constant to the light absorption layer 20 to minimize defects of the light absorption layer 20 formed thereon.
  • the epitaxial growth substrate 10 uses materials such as AlGaInP, AlGaAs, InGaAs as the light absorbing layer 20.
  • the light absorbing layer 20 of the solar cell in the present invention is composed of N subcells (N is a natural number of 2 or more) 22 having different absorption wavelengths, as shown in FIG. 3, and each subcell 22 ) Is a tunnel junction (Tunnel junction) 30 is made a multiple junction, it is possible to absorb light of various wavelengths to improve the efficiency.
  • N is a natural number of 2 or more
  • Tunnel junction tunnel junction
  • the subcell 22 is arranged to absorb light of a long wavelength at a short wavelength from the direction in which light is incident, that is, when light enters the subcell 22 of the uppermost layer, light of a short wavelength is absorbed first, and the long wavelength The light of is designed to be absorbed from the lower layer.
  • the sub-cell 22 in which the light absorbing layer 20 is (Al x Ga 1-x ) 0.5 In 0.5 P from the top layer of the multi-junction solar cell, and the sub cell (Al x Ga 1 - x As ( 22), In x Ga 1 - x As (0 ⁇ x ⁇ 1) is designed in the order of the sub-cell 22, the epi growth substrate 10 is formed in the reverse order of the epi growth, which will be described later The substrate 10 is removed, and the first subcell 22 formed on the substrate 10 for epitaxial growth is disposed on the top layer in a multi-junction solar cell structure.
  • the sub-cell 22 according to the present invention is a combination of solar cells of the same type or different types, such as silicon, perovskite, CIGS, organic material, group III-V compound semiconductor, etc. Can also be implemented.
  • the tunnel junction 30 is composed of a junction of p-type and n-type semiconductor materials, thereby minimizing the loss between each adjacent subcell 22 to maximize luminous efficiency.
  • the tunnel junction 30, using an Al x Ga y In z As or Al x Ga y In z P material (0 ⁇ x, y, z ⁇ 1, where at least any of x, y, z One is non-zero).
  • the tunnel junction 30 solves the problem of diffuse reflection due to a difference in refractive index when using a conventional transparent electrode and improves the transmittance to improve solar cell efficiency.
  • the doping concentration of the semiconductor material constituting the tunnel junction 30 is characterized in that 1 ⁇ 10 19 cm -3 ⁇ 1 ⁇ 10 22 cm -3 .
  • the efficiency of the solar cell is lowered by increasing the resistance of the solar cell due to low electrical conductivity.
  • the tunnel junction is performed.
  • the electrical conductivity in the tunnel junction 30 layer is improved to improve the efficiency of the solar cell.
  • the thickness of the semiconductor material constituting the tunnel junction 30 is 100 nm or less, preferably 10 nm to 100 nm, so that electrons and holes can be easily moved through the tunneling effect, suitable as a recombination layer to further improve the efficiency of the solar cell. It is possible.
  • the band gap of the semiconductor material forming the tunnel junction 30 is characterized in that it is relatively larger than the band gap of the sub-cell 22 located under the tunnel junction 30. This is to improve the efficiency of the solar cell by being made of a material that transmits light that can be absorbed by the subcell 22 located under the tunnel junction 30.
  • the sacrificial layer 12 may be first formed on the epitaxial growth substrate 10 before the light absorption layer 20 is formed on the epitaxial growth substrate 10. This is to efficiently remove the epitaxial growth substrate 10 to be described later, and the sacrificial layer 12 is epitaxially grown on the epitaxial growth substrate 10 and must be etched more easily than the substrate for a specific solvent.
  • the growth substrate 10 is formed of a different material or a different lattice constant material.
  • a buffer layer or the like may be further formed on the sacrificial layer 12 to minimize lattice defects.
  • the sacrificial layer 12 and the multi-junction light absorbing layer 20 formed on the epitaxial growth substrate 10 are formed by a conventional thin film deposition process, and the epitaxial growth substrate 10 and the light absorbing layer ( 20) When the sacrificial layer 12 is formed between, the removal of the epitaxial growth substrate 10, which will be described later, is performed through the removal of the sacrificial layer 12.
  • a back electrode 40 is formed on the light absorbing layer 20 (second step, FIG. 2(b)).
  • the subcell 22 constituting the light absorbing layer 20 formed on the epitaxial growth substrate 10 is formed in the reverse order of the final multi-junction solar cell structure, it is formed on the epitaxial growth substrate 10
  • the rear electrode 40 is formed on the uppermost layer of the subcells 22.
  • the back electrode 40 is formed of a metal such as gold (Au), titanium (Ti), chromium (Cr), silver (Ag), platinum (Pt), nickel (Ni), copper (Cu), or a transparent material In the case of using, it is formed of ITO or FTO or a conductive polymer resin layer.
  • the epitaxial growth substrate 10 is removed from the light absorbing layer 20 (third step, FIG. 2(c),(d)).
  • the sacrificial layer 12 is not formed between the epitaxial growth substrate 10 and the light absorbing layer 20, the laser lift due to the difference in band gap energy between the light absorbing layer 20 and the epitaxial growth substrate 10
  • the epitaxial growth substrate 10 is separated from the light absorbing layer 20 by an off process or the like, or when the sacrificial layer 12 is formed, the epitaxial growth substrate 10 is etched by the etching process of the sacrificial layer 12 or the like. It is separated from the absorbing layer (20).
  • the separated epitaxial growth substrate 10 can be reused and used in the next process, thereby reducing the cost for the expensive epitaxial growth substrate 10.
  • the heterogeneous substrate 60 is a target substrate constituting the final multi-junction solar cell, and is a hard material, a flexible material, a transparent material, an opaque material, a semi-transparent material, etc. according to the purpose and use of the multi-junction solar cell. It can be used in various ways.
  • ITO indium-tin oxide
  • FTO fluorine doped tin oxide
  • AZO aluminum doped zinc oxide
  • IGZO indium gallium zinc oxide
  • polymer films such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polypropylene (PP), polyimide (PI), polystylene (PS), and polycarbonate (PC) can be used, and metal foil ( Metal foil) can also be used in the form of a flexible substrate.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PP polypropylene
  • PI polyimide
  • PS polystylene
  • PC polycarbonate
  • metal foil Metal foil
  • the heterogeneous substrate 60 may be deposited, coated, bonded or laminated on the back electrode 40, or the multi-junction solar cell itself may be transferred and transferred onto the heterogeneous substrate 60.
  • a bonding process with the rear electrode 40 or a multi-junction solar cell may be added.
  • a temporary substrate for a process is formed under the dissimilar substrate 60 to temporarily support a multi-junction solar cell while the process is completed.
  • the front electrode 50 is formed on the light absorption layer 20 on the side where the epitaxial growth substrate 10 is removed (step 4, FIG. 2(e)).
  • the front electrode 50 is formed in a specific region by n-ohmic etching by a patterning process, and performs mesa etching of light absorption at the top layer and forms an anti-reflection coating (ARC) layer (FIG. 2(f)). Alternatively, a plurality of multi-junction solar cell elements will be completed.
  • ARC anti-reflection coating
  • the front electrode 50 may be formed of a metal material or a transparent material, like the back electrode 40.
  • FIG. 4 shows an electron micrograph of a subcell including a tunnel junction in a multi-junction solar cell structure manufactured according to an embodiment of the present invention.
  • the tunnel junction layer can be formed to a thickness of 83.3 nm to facilitate the movement of electrons or holes, and can be suitably used as a recombination layer.
  • the present invention uses a tunnel junction structure instead of a transparent electrode or a metal electrode between sub-cells (unit solar cells) in a multi-junction solar cell to improve transmittance and electrical conductivity to improve the multi-junction sun. It is intended to improve the efficiency of the battery.
  • the output voltage of the multi-junction solar cell is higher than that of the conventional single-junction solar cell, it is easy to match the rated voltage of the applied product, and the number of series connections can be reduced, thereby increasing the efficiency of the entire module.
  • a multi-junction solar cell on a heterogeneous substrate, it can be used in various ways depending on the purpose or use, and a multi-junction solar cell structure can be realized by delivering a multi-junction solar cell to a transparent flexible substrate, for example, regardless of the type of final substrate Therefore, by providing a transparent flexible solar cell, its utilization is expected to be excellent.
  • heterogeneous solar cells ie, III-V compound semiconductor solar cells, as well as heterogeneous subcells such as silicon, perovskite, CIGS, and organic materials are combined, and a tunnel junction structure is formed between each subcell. It is expected to be competitive in the heterogeneous multi-junction solar cell market, which is expected to come after the silicon solar cell market by realizing heterogeneous multi-junction solar cells by solving the problems of low permeability and low electrical conductivity by forming, and the possibility of practical use is very high. do.

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Abstract

The present invention relates to a method for manufacturing a multi-junction solar cell, and a multi-junction solar cell manufactured by same, and comprises: a first step for forming a light absorption layer above a substrate for epitaxial growth; a second step for forming a back contact electrode above the light absorption layer; a third step for removing the substrate for epitaxial growth from the light absorption layer, and a fourth step for forming a front contact electrode above the light absorption layer on the side where the substrate for epitaxial growth has been removed, wherein the light absoprtion layer is formed with N sub-cells (N is a natural number greater than or equal to 2) having different absorption wavelengths from each other, and each sub-cell is joined via a tunnel junction to form a multi-junction.

Description

다중접합 태양전지의 제조방법 및 이에 의해 제조된 다중접합 태양전지Manufacturing method of multi-junction solar cell and multi-junction solar cell manufactured thereby
본 발명은 다중접합 태양전지의 제조방법 및 이에 의해 제조된 다중접합 태양전지에 관한 것으로서, 투명 전극 및 금속 전극 대신에 재결합층으로 터널접합 구조를 적용하여 투과율 및 전기전도도를 개선하여 태양전지 효율을 향상시킨 것이다.The present invention relates to a method of manufacturing a multi-junction solar cell and a multi-junction solar cell manufactured thereby, by applying a tunnel junction structure as a recombination layer instead of a transparent electrode and a metal electrode, improving transmittance and electrical conductivity to improve solar cell efficiency. It was improved.
화석연료의 고갈과 환경오염, 지구온난화 문제로 인해 신재생에너지의 개발 필요성이 높아지고 있으며, 환경 친화적이고 무한 재생이 가능한 태양전지가 차세대 에너지원으로 주목받고 있다.Due to the depletion of fossil fuels, environmental pollution, and global warming, the need to develop new and renewable energy is increasing, and environmentally friendly and infinitely renewable solar cells are attracting attention as the next generation energy source.
이러한 태양전지는 태양광 발전의 핵심소자이며, 광기전력 효과(Photovoltaic Effect)를 이용하여 태양광 에너지를 직접 전기에너지로 변환시키는 소자로써, 변환효율을 향상시키고 제조비용을 감소시키기 위해 태양전지의 재료나 구조에 대한 연구가 이루어지고 있다.These solar cells are the core elements of photovoltaic power generation, and are devices that convert photovoltaic energy directly into electrical energy by using photovoltaic effects, to improve conversion efficiency and reduce manufacturing costs. I am researching the structure.
특히 Ⅲ-Ⅴ 화합물 반도체 태양전지는 다중접합 태양전지가 가능해 효율이 높은 장점을 가지고 있다. 그러나, Ⅲ-Ⅴ 화합물 반도체 다중접합 태양전지는 높은 기판 가격, 집광을 위한 장치 등이 필요하여 높은 발전단가로 경제성이 떨어지는 단점이 있다.Particularly, the III-V compound semiconductor solar cell has the advantage of high efficiency because it can be a multi-junction solar cell. However, the III-V compound semiconductor multi-junction solar cell has a disadvantage of low economic efficiency due to high power generation cost because of the need for a high substrate price and a device for condensing.
이를 극복하기 위해서 실리콘(Silicon), 페로브스카이트(Perovskite), 유기물질 등 제조 단가가 낮은 물질을 이용하여 이종의 다중접합 태양전지를 개발하여 발전단가를 낮추고자 하는 여러 시도가 이루어지고 있다.In order to overcome this, various attempts have been made to lower the cost of power generation by developing heterogeneous multi-junction solar cells using materials having low manufacturing costs, such as silicon, perovskite, and organic materials.
일반적으로 이종의 다중접합 태양전지 구조에서 단위 태양전지(sub-cell) 사이에 재결합층(recombination layer)를 필요로 하는데, 재결합층으로 투명전극(도 1(a)) 또는 패터닝된 금속전극(도 1(b))을 사용하고 있다.In general, in a heterogeneous multi-junction solar cell structure, a recombination layer is required between sub-cells, and a transparent electrode (FIG. 1(a)) or a patterned metal electrode (FIG. 1(b)) is used.
도 1(a)에 도시한 바와 같이, 재결합층으로 투명전극을 사용하는 경우 단위 태양전지와 투명전극 물질의 굴절률 차이에 의해 발생하는 난반사에 의한 투과율 저하로 태양전지 효율 저하기 발생하게 된다. 이를 해결하기 위해 태양전지와 투명전극 사이에 ARC(Anti-reflection coating) 물질을 증착하는 추가 공정이 필요하다.As shown in FIG. 1(a), when a transparent electrode is used as the recombination layer, the efficiency of the solar cell decreases due to a decrease in transmittance due to diffuse reflection caused by a difference in refractive index between the unit solar cell and the transparent electrode material. In order to solve this, an additional process of depositing an anti-reflection coating (ARC) material between the solar cell and the transparent electrode is required.
또한 투명전극으로 사용되는 물질은 일반적인 금속 물질보다 전기전도도가 낮아서 태양전지 저항을 높게 하여 태양전지 효율 저하를 유발하게 된다.In addition, the material used as a transparent electrode has a lower electrical conductivity than a typical metal material, thereby increasing the resistance of the solar cell, causing a decrease in solar cell efficiency.
또한 도 1(b)에 도시한 바와 같이 재결합층으로 패터닝된 금속전극을 사용하는 경우 단위 태양전지 사이에 Align된 패터닝된 금속전극 공정이 추가로 필요하고 또한 패터닝된 금속전극에 의해서 shadow loss가 발생하여 태양전지 효율이 저하되게 된다.In addition, when using a metal electrode patterned as a recombination layer as shown in FIG. 1(b), a patterned metal electrode process that is aligned between unit solar cells is additionally required, and shadow loss occurs by the patterned metal electrode. Thus, the efficiency of the solar cell is reduced.
본 발명은 상기 필요성에 의해 고안된 것으로서, 투명 전극 및 금속 전극 대신에 재결합층으로 터널접합 구조를 적용하여 투과율 및 전기전도도를 개선하여 태양전지 효율을 향상시킨 다중접합 태양전지의 제조방법 및 이에 의해 제조된 다중접합 태양전지의 제공을 그 목적으로 한다.The present invention was devised by the necessity, and a method for manufacturing a multi-junction solar cell that improves solar cell efficiency by improving the transmittance and electrical conductivity by applying a tunnel junction structure as a recombination layer instead of a transparent electrode and a metal electrode, and manufacturing the same The purpose is to provide a multi-junction solar cell.
상기 목적을 달성하기 위해 본 발명은, 다중접합 태양전지의 제조방법에 있어서, 에피성장용 기판 상부에 광흡수층을 형성시키는 제1단계와, 상기 광흡수층 상부에 후면전극을 형성시키는 제2단계와, 상기 광흡수층으로부터 상기 에피성장용 기판을 제거하는 제3단계 및 상기 에피성장용 기판이 제거된 측의 광흡수층 상부에 전면전극을 형성하는 제4단계를 포함하되, 상기 광흡수층은 서로 다른 흡수 파장을 갖는 N개의 서브셀(N은 2 이상의 자연수)로 이루어지며, 각 서브셀은 터널접합(Tunnel junction)되어 다중접합을 이루는 것을 특징으로 하는 다중접합 태양전지의 제조방법 및 이에 의해 제조된 다중접합 태양전지를 기술적 요지로 한다.In order to achieve the above object, the present invention, in a method of manufacturing a multi-junction solar cell, a first step of forming a light absorbing layer on the epi growth substrate and a second step of forming a back electrode on the light absorbing layer. , A third step of removing the epitaxial growth substrate from the light absorption layer and a fourth step of forming a front electrode on the light absorption layer on the side where the epitaxial growth substrate is removed, wherein the light absorption layers have different absorptions. N subcells having a wavelength (N is a natural number of 2 or more), each subcell is a tunnel junction (Tunnel junction) multi-junction solar cell manufacturing method characterized in that to form a multi-junction and the multiple produced by this The junction solar cell is a technical point.
여기에서 상기 서브셀은, 빛이 입사되는 방향으로부터 단파장에서 장파장의 빛을 흡수하도록 배치되는 것이 바람직하다.Here, the subcell is preferably arranged to absorb light of a long wavelength at a short wavelength from a direction in which light is incident.
또한, 상기 터널접합은, p-type과 n-type 반도체 물질의 접합으로 구성되며, AlxGayInzAs 또는 AlxGayInzP 물질을 사용하는 것(0≤x, y, z≤1, 여기서 x, y, z 중 적어도 어느 하나는 0이 아님)이 바람직하다.In addition, the tunnel junction is composed of a junction of p-type and n-type semiconductor materials, and using Al x Ga y In z As or Al x Ga y In z P materials (0≤x, y, z ≤1, wherein at least one of x, y, and z is non-zero) is preferred.
또한, 상기 터널접합을 이루는 반도체 물질의 도핑 농도는 1×1019cm-3 ~ 1×1022cm-3 인 것이 바람직하며, 상기 터널접합을 이루는 반도체 물질의 두께는 10nm~100nm 인 것을 특징으로 한다.In addition, the doping concentration of the semiconductor material forming the tunnel junction is preferably 1×10 19 cm -3 to 1×10 22 cm -3 , and the thickness of the semiconductor material forming the tunnel junction is 10 nm to 100 nm. do.
또한, 상기 터널접합을 이루는 반도체 물질의 밴드갭은 상기 터널접합 하부에 위치하는 서브셀의 밴드갭보다 상대적으로 큰 것을 특징으로 한다.In addition, the band gap of the semiconductor material forming the tunnel junction is characterized in that it is relatively larger than the band gap of the sub-cell located under the tunnel junction.
또한, 상기 광흡수층을 형성하기 전에, 상기 에피성장용 기판 상부에 희생층을 먼저 형성하는 것이 바람직하다.In addition, before forming the light absorbing layer, it is preferable to first form a sacrificial layer on the epi growth substrate.
한편, 상기 다중접합 태양전지를 이종기판에 전사할 수 있으며, 상기 이종기판은, 경질 또는 플렉시블 재질로 형성될 수 있다. 예컨대 실리콘, 유리, quartz, 메탈 호일, 플라스틱 필름 중 어느 하나를 사용할 수 있다.Meanwhile, the multi-junction solar cell may be transferred to a heterogeneous substrate, and the heterogeneous substrate may be formed of a rigid or flexible material. For example, any one of silicon, glass, quartz, metal foil, and plastic film can be used.
본 발명은 다중접합 태양전지에서 서브셀(Sub-cell, 단위 태양전지) 사이에 투명전극이나 금속전극 대신에 터널접합(Tunnel junction) 구조를 사용하여 투과율 및 전기전도도를 개선하여 다중접합 태양전지의 효율을 개선시킨 효과가 있다.The present invention uses a tunnel junction structure instead of a transparent electrode or a metal electrode between sub-cells in a multi-junction solar cell to improve transmittance and electrical conductivity to improve the multi-junction solar cell. It has the effect of improving efficiency.
또한 다중접합 태양전지는 기존의 단일접합 태양전지에 비해 출력전압이 높기 때문에 응용제품의 정격 전압을 맞추기 용이하며 직렬연결 수를 줄일 수 있기 때문에 전체 모듈의 효율을 높일 수 있다.In addition, because the output voltage of the multi-junction solar cell is higher than that of the conventional single-junction solar cell, it is easy to match the rated voltage of the applied product, and the number of series connections can be reduced, thereby increasing the efficiency of the entire module.
또한 이종기판에 다중접합 태양전지를 형성함으로써, 목적이나 용도에 따라 다양하게 활용할 수 있으며, 최종 기판의 종류에 관계없이 예컨대 투명한 플렉시블 기판에도 다중접합 태양전지를 전달하여 다중접합 태양전지 구조를 구현할 수 있으므로, 투명 플렉시블 태양전지를 제공함으로써, 그 활용도가 뛰어날 것으로 기대된다.In addition, by forming a multi-junction solar cell on a heterogeneous substrate, it can be used in various ways depending on the purpose or use, and a multi-junction solar cell structure can be realized by delivering a multi-junction solar cell to a transparent flexible substrate, for example, regardless of the type of the final substrate. Therefore, by providing a transparent flexible solar cell, its utilization is expected to be excellent.
또한 이종 태양전지 즉, Ⅲ-Ⅴ 화합물 반도체 태양전지뿐만 아니라 실리콘(Silicon), 페로브스카이트(Perovskite), CIGS, 유기물질과 같은 이종의 서브셀을 조합하고, 각 서브셀 간에 터널접합 구조를 형성하여 낮은 투과도, 낮은 전기전도도 문제를 해결하여 이종의 다중접합 태양전지를 구현함으로써 실리콘 태양전지 시장 이후에 도래할 것으로 예상되는 이종 다중접합 태양전지 시장에서 경쟁력을 갖추고, 실용화 가능성이 매우 높을 것으로 기대된다.In addition, heterogeneous solar cells, ie, III-V compound semiconductor solar cells, as well as heterogeneous subcells such as silicon, perovskite, CIGS, and organic materials are combined, and a tunnel junction structure is formed between each subcell. It is expected to be competitive in the heterogeneous multi-junction solar cell market, which is expected to come after the silicon solar cell market by realizing heterogeneous multi-junction solar cells by solving the problems of low permeability and low electrical conductivity by forming, and the possibility of practical use is very high. do.
또한 이종 다중접합 태양전지 개발은 발전 소자 산업을 비롯한 다양한 산업분야에서 높은 부가가치를 창출하고, 고용을 창출함으로써 국가 경제 활성화의 원동력이 될 것으로 기대된다.In addition, the development of heterogeneous multi-junction solar cells is expected to be a driving force of the national economy by creating high added value and creating employment in various industries including the power generation device industry.
도 1 - 종래의 다중접합 태양전지에 대한 모식도.1-A schematic diagram of a conventional multi-junction solar cell.
도 2 - 본 발명에 따른 다중접합 태양전지의 제조방법에 대한 모식도.Figure 2-schematic diagram for a method of manufacturing a multi-junction solar cell according to the present invention.
도 3 - 본 발명에 따른 다중접합 태양전지에 대한 모식도.3-A schematic diagram of a multi-junction solar cell according to the present invention.
도 4 - 본 발명의 일실시예에 따라 터널접합 구조를 포함하는 서브셀에 대한 전자 현미경 사진을 나타낸 도.4-an electron micrograph of a subcell comprising a tunnel junction structure in accordance with one embodiment of the present invention.
본 발명은 다중접합 태양전지에서 서브셀(Sub-cell, 단위 태양전지) 사이에 투명전극이나 금속전극 대신에 터널접합(Tunnel junction) 구조를 사용하여 투과율 및 전도도를 개선하여 다중접합 태양전지의 효율을 개선시키고자 하는 것이다.The present invention uses a tunnel junction structure instead of a transparent electrode or a metal electrode between sub-cells in a multi-junction solar cell to improve transmittance and conductivity to improve the efficiency of the multi-junction solar cell. Is to improve.
이하에서는 첨부된 도면을 참조하여 본 발명에 대해 상세히 설명하고자 한다. 도 2는 본 발명에 따른 다중접합 태양전지의 제조방법에 대한 모식도이고, 도 3은 본 발명에 따른 다중접합 태양전지에 대한 모식도이며, 도 4는 본 발명의 일실시예에 따라 터널접합 구조를 포함하는 서브셀에 대한 전자 현미경 사진을 나타낸 것이다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. 2 is a schematic view of a method of manufacturing a multi-junction solar cell according to the present invention, FIG. 3 is a schematic view of a multi-junction solar cell according to the present invention, and FIG. 4 is a tunnel junction structure according to an embodiment of the present invention. It shows the electron micrograph of the containing subcell.
도시된 바와 같이 본 발명에 따른 다중접합 태양전지의 제조방법은, 다중접합 태양전지의 제조방법에 있어서, 에피성장용 기판(10) 상부에 광흡수층(20)을 형성시키는 제1단계와, 상기 광흡수층(20) 상부에 후면전극(40)을 형성시키는 제2단계와, 상기 광흡수층(20)으로부터 상기 에피성장용 기판(10)을 제거하는 제3단계 및 상기 에피성장용 기판(10)이 제거된 측의 광흡수층(20) 상부에 전면전극(50)을 형성하는 제4단계를 포함하되, 상기 광흡수층(20)은 서로 다른 흡수 파장을 갖는 N개의 서브셀(N은 2 이상의 자연수)(22)로 이루어지며, 각 서브셀(22)은 터널접합(Tunnel junction)(30)되어 다중접합을 이루는 것을 특징으로 한다.As shown in the manufacturing method of a multi-junction solar cell according to the present invention, in the manufacturing method of a multi-junction solar cell, a first step of forming a light absorbing layer 20 on the substrate 10 for epi growth, and The second step of forming the back electrode 40 on the light absorbing layer 20, and the third step of removing the epitaxial growth substrate 10 from the light absorbing layer 20 and the epitaxial growth substrate 10 Including the fourth step of forming the front electrode 50 on the light absorbing layer 20 of the removed side, the light absorbing layer 20 has N subcells having different absorption wavelengths (N is a natural number of 2 or more ) 22, and each subcell 22 is tunnel junction 30 to form multiple junctions.
본 발명에 따른 다중접합 태양전지의 제조방법은 도 2에 도시한 바와 같이, 먼저, 에피성장용 기판(10) 상부에 광흡수층(20)을 형성하는 것이다(제1단계, 도 2(a)).The method of manufacturing a multi-junction solar cell according to the present invention is to form a light absorbing layer 20 on the substrate 10 for epi growth, as shown in FIG. 2 (first step, FIG. 2(a)). ).
상기 에피성장용 기판(10)은 그 상부에 형성되는 광흡수층(20)의 결함을 최소화하기 위해 광흡수층(20)과 격자상수가 비슷한 기판을 사용한다. 예컨대, 상기 에피성장용 기판(10)은 GaAs, InP 등을 사용하는 경우 광흡수층(20)으로는 AlGaInP, AlGaAs, InGaAs 등의 재료를 사용하게 된다.The epitaxial growth substrate 10 uses a substrate having a similar lattice constant to the light absorption layer 20 to minimize defects of the light absorption layer 20 formed thereon. For example, in the case of using GaAs, InP, etc., the epitaxial growth substrate 10 uses materials such as AlGaInP, AlGaAs, InGaAs as the light absorbing layer 20.
본 발명에서의 태양전지의 광흡수층(20)은 도 3에 도시한 바와 같이, 서로 다른 흡수 파장을 갖는 N개의 서브셀(N은 2 이상의 자연수)(22)로 이루어지며, 각 서브셀(22)은 터널접합(Tunnel junction)(30)되어 다중접합을 이루어, 다양한 파장의 빛을 흡수할 수 있어 효율을 개선시킨 것이다.The light absorbing layer 20 of the solar cell in the present invention is composed of N subcells (N is a natural number of 2 or more) 22 having different absorption wavelengths, as shown in FIG. 3, and each subcell 22 ) Is a tunnel junction (Tunnel junction) 30 is made a multiple junction, it is possible to absorb light of various wavelengths to improve the efficiency.
여기에서 상기 서브셀(22)은, 빛이 입사되는 방향으로부터 단파장에서 장파장의 빛을 흡수하도록 배치되며, 즉, 최상층의 서브셀(22)에 빛이 입사되면 단파장의 빛이 먼저 흡수되고, 장파장의 빛은 보다 하부층에서 흡수되도록 설계된다.Here, the subcell 22 is arranged to absorb light of a long wavelength at a short wavelength from the direction in which light is incident, that is, when light enters the subcell 22 of the uppermost layer, light of a short wavelength is absorbed first, and the long wavelength The light of is designed to be absorbed from the lower layer.
본 발명의 일실시예로 다중접합 태양전지의 최상층으로부터 광흡수층(20)이 (AlxGa1-x)0.5In0.5P인 서브셀(22), AlxGa1 - xAs인 서브셀(22), InxGa1 - xAs(0<x<1)인 서브셀(22)의 순서로 설계되게 되므로, 에피성장용 기판(10) 상부에는 이의 역순으로 형성되게 되며, 후술할 에피성장용 기판(10)이 제거되고, 에피성장용 기판(10)에 가장 먼저 형성된 서브셀(22)이 다중접합 태양전지 구조에서 최상층에 배치되게 된다.In one embodiment of the present invention, the sub-cell 22 in which the light absorbing layer 20 is (Al x Ga 1-x ) 0.5 In 0.5 P from the top layer of the multi-junction solar cell, and the sub cell (Al x Ga 1 - x As ( 22), In x Ga 1 - x As (0 <x <1) is designed in the order of the sub-cell 22, the epi growth substrate 10 is formed in the reverse order of the epi growth, which will be described later The substrate 10 is removed, and the first subcell 22 formed on the substrate 10 for epitaxial growth is disposed on the top layer in a multi-junction solar cell structure.
또한, 본 발명에 따른 서브셀(22)은 같은 종류 또는 서로 다른 종류의 태양전지 예컨대 실리콘(Silicon), 페로브스카이트(Perovskite), CIGS, 유기물질, Ⅲ-Ⅴ족 화합물 반도체 등의 조합으로도 구현될 수 있다.In addition, the sub-cell 22 according to the present invention is a combination of solar cells of the same type or different types, such as silicon, perovskite, CIGS, organic material, group III-V compound semiconductor, etc. Can also be implemented.
또한, 상기 터널접합(30)은, p-type과 n-type 반도체 물질의 접합으로 구성되어, 각 인접하는 서브셀(22) 간의 손실을 최소화시켜 발광 효율을 극대화시키는 것이다. 또한, 상기 터널접합(30)은, AlxGayInzAs 또는 AlxGayInzP 물질을 사용하는 것(0≤x, y, z≤1, 여기서 x, y, z 중 적어도 어느 하나는 0이 아님)을 특징으로 한다.In addition, the tunnel junction 30 is composed of a junction of p-type and n-type semiconductor materials, thereby minimizing the loss between each adjacent subcell 22 to maximize luminous efficiency. In addition, the tunnel junction 30, using an Al x Ga y In z As or Al x Ga y In z P material (0≤x, y, z≤1, where at least any of x, y, z One is non-zero).
이러한 터널접합(30)은 서브셀(22)과의 굴절률이 비슷한 반도체 물질을 사용함으로써, 기존의 투명전극 사용시 굴절률 차이에 따른 난반사 문제를 해결하고 투과도를 향상하여 태양전지 효율을 향상시킨 것이다.By using a semiconductor material having a similar refractive index to the subcell 22, the tunnel junction 30 solves the problem of diffuse reflection due to a difference in refractive index when using a conventional transparent electrode and improves the transmittance to improve solar cell efficiency.
또한, 상기 터널접합(30)을 이루는 반도체 물질의 도핑 농도는 1×1019cm-3 ~ 1×1022cm-3인 것을 특징으로 한다.In addition, the doping concentration of the semiconductor material constituting the tunnel junction 30 is characterized in that 1 × 10 19 cm -3 ~ 1 × 10 22 cm -3 .
기존의 다중접합 태양전지에서 각 서브셀(22) 간의 재결합층으로 투명전극을 사용하는 경우, 낮은 전기전도도로 인해 태양전지의 저항을 높게 하여 태양전지의 효율을 저하시키게 되는데, 본 발명에서는 터널접합(30)을 이루는 반도체 물질의 고농도 도핑을 구현하여 터널접합(30) 층에서의 전기전도도를 향상시켜 태양전지의 효율을 향상시키는 것이다.In the case of using a transparent electrode as a recombination layer between each sub-cell 22 in a conventional multi-junction solar cell, the efficiency of the solar cell is lowered by increasing the resistance of the solar cell due to low electrical conductivity. In the present invention, the tunnel junction is performed. By implementing high concentration doping of the semiconductor material constituting (30), the electrical conductivity in the tunnel junction 30 layer is improved to improve the efficiency of the solar cell.
또한 상기 터널접합(30)을 이루는 반도체 물질의 두께는 100nm 이하, 바람직하게는 10nm~100nm로 형성하여 터널링 효과로 전자와 홀의 이동이 용이하도록 하여 재결합층으로 적합하여 태양전지의 효율을 더욱 향상시킬 수 있는 것이다.In addition, the thickness of the semiconductor material constituting the tunnel junction 30 is 100 nm or less, preferably 10 nm to 100 nm, so that electrons and holes can be easily moved through the tunneling effect, suitable as a recombination layer to further improve the efficiency of the solar cell. It is possible.
또한 상기 터널접합(30)을 이루는 반도체 물질의 밴드갭은 상기 터널접합(30) 하부에 위치하는 서브셀(22)의 밴드갭보다 상대적으로 큰 것을 특징으로 한다. 이는 터널접합(30) 하부에 위치하는 서브셀(22)에서 흡수할 수 있는 빛을 투과하는 물질로 구현되도록 하여 태양전지의 효율을 향상시키도록 하는 것이다.In addition, the band gap of the semiconductor material forming the tunnel junction 30 is characterized in that it is relatively larger than the band gap of the sub-cell 22 located under the tunnel junction 30. This is to improve the efficiency of the solar cell by being made of a material that transmits light that can be absorbed by the subcell 22 located under the tunnel junction 30.
한편, 에피성장용 기판(10) 상부에 광흡수층(20)을 형성하기 전에 상기 에피성장용 기판(10) 상부에 희생층(12)을 먼저 형성할 수도 있다. 이는 후술할 에피성장용 기판(10) 제거시 효율적으로 제거하기 위한 것으로서, 희생층(12)은 에피성장용 기판(10) 상에 에픽탁셜하게 성장되며 특정 용매에 대하여 기판보다 쉽게 식각되어야 하므로 에피성장용 기판(10)과는 다른 재료 또는 다른 격자상수의 물질로 형성된다. 또한 격자결함을 최소화하기 위해 희생층(12) 상에 버퍼층 등을 더 형성시킬 수 있다.Meanwhile, the sacrificial layer 12 may be first formed on the epitaxial growth substrate 10 before the light absorption layer 20 is formed on the epitaxial growth substrate 10. This is to efficiently remove the epitaxial growth substrate 10 to be described later, and the sacrificial layer 12 is epitaxially grown on the epitaxial growth substrate 10 and must be etched more easily than the substrate for a specific solvent. The growth substrate 10 is formed of a different material or a different lattice constant material. In addition, a buffer layer or the like may be further formed on the sacrificial layer 12 to minimize lattice defects.
이와 같이 에피성장용 기판(10) 상에 형성된 희생층(12) 및 다중접합 구조의 광흡수층(20)은 통상의 박막 증착 공정에 의해 형성되게 되며, 에피성장용 기판(10)과 광흡수층(20) 사이에 희생층(12)을 형성한 경우에는 후술할 에피성장용 기판(10)의 제거는 상기 희생층(12)의 제거를 통해 이루어지게 된다.As described above, the sacrificial layer 12 and the multi-junction light absorbing layer 20 formed on the epitaxial growth substrate 10 are formed by a conventional thin film deposition process, and the epitaxial growth substrate 10 and the light absorbing layer ( 20) When the sacrificial layer 12 is formed between, the removal of the epitaxial growth substrate 10, which will be described later, is performed through the removal of the sacrificial layer 12.
그리고, 상기 광흡수층(20) 상부에 후면전극(40)을 형성시킨다(제2단계, 도 2(b)).Then, a back electrode 40 is formed on the light absorbing layer 20 (second step, FIG. 2(b)).
상술한 바와 같이, 에피성장용 기판(10)에 형성되는 광흡수층(20)을 이루는 서브셀(22)은 최종 다중접합 태양전지 구조의 역순으로 형성하게 되므로, 에피성장용 기판(10)에 형성된 서브셀(22) 중 최상층에 후면전극(40)을 형성하게 된다.As described above, since the subcell 22 constituting the light absorbing layer 20 formed on the epitaxial growth substrate 10 is formed in the reverse order of the final multi-junction solar cell structure, it is formed on the epitaxial growth substrate 10 The rear electrode 40 is formed on the uppermost layer of the subcells 22.
상기 후면전극(40)은 금(Au), 티타늄(Ti), 크롬(Cr), 은(Ag), 백금(Pt), 니켈(Ni), 구리(Cu) 등의 금속으로 형성되거나, 투명한 재료를 사용하고자 하는 경우에는 ITO나 FTO 또는 전도성 고분자 수지층으로 형성된다.The back electrode 40 is formed of a metal such as gold (Au), titanium (Ti), chromium (Cr), silver (Ag), platinum (Pt), nickel (Ni), copper (Cu), or a transparent material In the case of using, it is formed of ITO or FTO or a conductive polymer resin layer.
그리고 상기 광흡수층(20)으로부터 상기 에피성장용 기판(10)을 제거한다(제3단계, 도 2(c),(d)).Then, the epitaxial growth substrate 10 is removed from the light absorbing layer 20 (third step, FIG. 2(c),(d)).
희생층(12)이 에피성장용 기판(10)과 광흡수층(20) 사이에 형성되어 있지 않은 경우에는 광흡수층(20)과 에피성장용 기판(10)과의 밴드갭 에너지 차이에 의한 레이저 리프트 오프 공정 등에 의해 에피성장용 기판(10)을 광흡수층(20)으로부터 분리시키거나, 희생층(12)이 형성된 경우에는 희생층(12)의 식각 공정 등에 의해 에피성장용 기판(10)을 광흡수층(20)으로부터 분리시킨다.If the sacrificial layer 12 is not formed between the epitaxial growth substrate 10 and the light absorbing layer 20, the laser lift due to the difference in band gap energy between the light absorbing layer 20 and the epitaxial growth substrate 10 The epitaxial growth substrate 10 is separated from the light absorbing layer 20 by an off process or the like, or when the sacrificial layer 12 is formed, the epitaxial growth substrate 10 is etched by the etching process of the sacrificial layer 12 or the like. It is separated from the absorbing layer (20).
이러한 분리된 에피성장용 기판(10)은 다시 재사용되어 다음 공정에 사용할 수 있어 고가의 에피성장용 기판(10)에 대한 비용을 절감시킬 수 있다.The separated epitaxial growth substrate 10 can be reused and used in the next process, thereby reducing the cost for the expensive epitaxial growth substrate 10.
그리고 상기 에피성장용 기판(10)을 제거한 다음 또는 에피성장용 기판(10)을 제거하기 전에 도 3에 도시한 바와 같이 상기 후면전극(40) 상부에 이종기판(60)을 형성할 수 있다. 상기 이종기판(60)은 최종 다중접합 태양전지를 이루는 기판(Target substrate)으로써, 다중접합 태양전지의 사용목적 및 용도에 따라 경질 재료, 플렉시블한 재료, 투명한 재료, 불투명한 재료, 반투명한 재료 등 다양하게 사용할 수 있다.Then, after removing the epitaxial growth substrate 10 or before removing the epitaxial growth substrate 10, a heterogeneous substrate 60 may be formed on the rear electrode 40 as shown in FIG. 3. The heterogeneous substrate 60 is a target substrate constituting the final multi-junction solar cell, and is a hard material, a flexible material, a transparent material, an opaque material, a semi-transparent material, etc. according to the purpose and use of the multi-junction solar cell. It can be used in various ways.
예컨대 경질 기판으로는 ITO(indium-tin oxide), FTO(fluorine doped tin oxide), AZO(aluminium doped zinc oxide), IGZO(Indium gallium zinc oxide), 유리, 실리콘, quartz 등이 사용될 수 있다.For example, indium-tin oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), indium gallium zinc oxide (IGZO), glass, silicon, quartz, and the like can be used.
플렉시블 기판으로는 PET(Polyethyleneterephthalate), PEN(polyethylene naphthalate), PP(polypropylene), PI(polyimide), PS(polystylene) 및 PC(polycarbonate) 등과 같은 고분자 필름이 사용될 수 있으며, 금속을 증착한 메탈 호일(metal foil)을 사용하는 경우에도 플렉시블 기판의 형태로 제공할 수 있다.As a flexible substrate, polymer films such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polypropylene (PP), polyimide (PI), polystylene (PS), and polycarbonate (PC) can be used, and metal foil ( Metal foil) can also be used in the form of a flexible substrate.
여기에서, 상기 이종기판(60)은 후면전극(40) 상부에 증착, 코팅, 접합 또는 라미네이팅되거나, 다중접합 태양전지 자체가 이종기판(60) 상에 전사되어 전달될 수도 있다.Here, the heterogeneous substrate 60 may be deposited, coated, bonded or laminated on the back electrode 40, or the multi-junction solar cell itself may be transferred and transferred onto the heterogeneous substrate 60.
이종기판(60)의 종류에 따라 후면전극(40) 또는 다중접합 태양전지와의 접합 공정이 추가될 수도 있다.Depending on the type of the heterogeneous substrate 60, a bonding process with the rear electrode 40 or a multi-junction solar cell may be added.
필요에 따라 이종기판(60) 하부에는 공정용 임시기판을 형성하여, 공정이 완료되는 동안 일시적으로 다중접합 태양전지를 지지하는 역할을 수행하게 된다.If necessary, a temporary substrate for a process is formed under the dissimilar substrate 60 to temporarily support a multi-junction solar cell while the process is completed.
그리고, 상기 에피성장용 기판(10)이 제거된 측의 광흡수층(20) 상부에 전면전극(50)을 형성한다(제4단계, 도 2(e)).Then, the front electrode 50 is formed on the light absorption layer 20 on the side where the epitaxial growth substrate 10 is removed (step 4, FIG. 2(e)).
상기 전면전극(50)은 패터닝 공정에 의해 n-ohmic etching하여 특정 영역에 형성되고, 최상층의 광흡수의 mesa etching을 수행하고 ARC(Anti reflection coating) 층(도 2(f))을 형성하여 하나 또는 복수개의 다중접합 태양전지 소자를 완성하게 된다.The front electrode 50 is formed in a specific region by n-ohmic etching by a patterning process, and performs mesa etching of light absorption at the top layer and forms an anti-reflection coating (ARC) layer (FIG. 2(f)). Alternatively, a plurality of multi-junction solar cell elements will be completed.
여기에서 전면전극(50)은 상기 후면전극(40)과 같이 금속 재료로 형성되거나, 투명한 재료로 형성될 수 있다.Here, the front electrode 50 may be formed of a metal material or a transparent material, like the back electrode 40.
도 4는 본 발명의 일실시예에 따라 제작된 다중접합 태양전지 구조에 있어서 터널 접합이 포함된 서브셀에 대한 전자 현미경 사진을 나타낸 것이다.4 shows an electron micrograph of a subcell including a tunnel junction in a multi-junction solar cell structure manufactured according to an embodiment of the present invention.
(AlxGa1 -x)0.5In0 .5P인 서브셀, 터널접합을 이루는 반도체 물질로 AlGaAs/GaInP 물질을 사용하였으며, 터널접합 구조로 굴절률의 차이가 비슷하여 난반사를 줄이고, 투과도를 향상시킬 수 있으며, 터널접합 층을 두께 83.3nm로 형성하여 전자나 홀의 이동이 용이하여 재결합층으로 적합하게 사용할 수 있다. (Al x Ga 1 -x) 0.5 In 0 .5 P of sub-cells, was used as a AlGaAs / GaInP semiconductor material with a material of the tunnel junction, and the difference in refractive index is similar to the tunnel junction structure to reduce the diffuse reflection, improve transmittance The tunnel junction layer can be formed to a thickness of 83.3 nm to facilitate the movement of electrons or holes, and can be suitably used as a recombination layer.
이와 같이 본 발명은 다중접합 태양전지에서 서브셀(Sub-cell, 단위 태양전지) 사이에 투명전극이나 금속전극 대신에 터널접합(Tunnel junction) 구조를 사용하여 투과율 및 전기전도도를 개선하여 다중접합 태양전지의 효율을 개선시키고자 하는 것이다.As described above, the present invention uses a tunnel junction structure instead of a transparent electrode or a metal electrode between sub-cells (unit solar cells) in a multi-junction solar cell to improve transmittance and electrical conductivity to improve the multi-junction sun. It is intended to improve the efficiency of the battery.
또한 다중접합 태양전지는 기존의 단일접합 태양전지에 비해 출력전압이 높기 때문에 응용제품의 정격 전압을 맞추기 용이하며 직렬연결 수를 줄일 수 있기 때문에 전체 모듈의 효율을 높일 수 있다.In addition, because the output voltage of the multi-junction solar cell is higher than that of the conventional single-junction solar cell, it is easy to match the rated voltage of the applied product, and the number of series connections can be reduced, thereby increasing the efficiency of the entire module.
또한 이종기판에 다중접합 태양전지를 형성함으로써, 목적이나 용도에 따라 다양하게 활용할 수 있으며, 최종 기판의 종류에 관계없이 예컨대 투명한 플렉시블 기판에도 다중접합 태양전지를 전달하여 다중접합 태양전지 구조를 구현할 수 있으므로, 투명 플렉시블 태양전지를 제공함으로써, 그 활용도가 뛰어날 것으로 기대된다.In addition, by forming a multi-junction solar cell on a heterogeneous substrate, it can be used in various ways depending on the purpose or use, and a multi-junction solar cell structure can be realized by delivering a multi-junction solar cell to a transparent flexible substrate, for example, regardless of the type of final substrate Therefore, by providing a transparent flexible solar cell, its utilization is expected to be excellent.
또한 이종 태양전지 즉, Ⅲ-Ⅴ 화합물 반도체 태양전지뿐만 아니라 실리콘(Silicon), 페로브스카이트(Perovskite), CIGS, 유기물질과 같은 이종의 서브셀을 조합하고, 각 서브셀 간에 터널접합 구조를 형성하여 낮은 투과도, 낮은 전기전도도 문제를 해결하여 이종의 다중접합 태양전지를 구현함으로써 실리콘 태양전지 시장 이후에 도래할 것으로 예상되는 이종 다중접합 태양전지 시장에서 경쟁력을 갖추고, 실용화 가능성이 매우 높을 것으로 기대된다.In addition, heterogeneous solar cells, ie, III-V compound semiconductor solar cells, as well as heterogeneous subcells such as silicon, perovskite, CIGS, and organic materials are combined, and a tunnel junction structure is formed between each subcell. It is expected to be competitive in the heterogeneous multi-junction solar cell market, which is expected to come after the silicon solar cell market by realizing heterogeneous multi-junction solar cells by solving the problems of low permeability and low electrical conductivity by forming, and the possibility of practical use is very high. do.
아울러, 본 발명은 하기 기재된 2개의 국가연구개발사업의 지원으로 이루어졌음을 밝힌다.In addition, it is revealed that the present invention was made with the support of the two national research and development projects described below.
과제고유번호: 2017M1A2A2087356 Assignment No .: 2017M1A2A2087356
부처명: 과학기술정보통신부Department name: Ministry of Science and ICT
연구관리전문기관: 한국연구재단Research management agency: Korea Research Foundation
연구사업명: 기후변화대응기술개발사업 Research Project Name: Climate Change Response Technology Development Project
연구과제명: 이종 다중접합 태양전지 적용을 위한 효율 18% 이상의 고신뢰성 박막형 InGaP 태양전지 개발Project Title: Development of high-reliability thin-film InGaP solar cells with an efficiency of over 18% for the application of heterogeneous multi-junction solar cells
기여율: 1/2Contribution rate: 1/2
주관기관: 한국나노기술원Organized by: Korea Nanotechnology Institute
연구기간: 2017. 12. 20 ~ 2022. 01. 19Research Period: 2017. 12. 20 ~ 2022. 01. 19
과제고유번호: 20163030013980 Assignment No .: 20163030013980
부처명: 산업통상자원부Department name: Ministry of Trade, Industry and Energy
연구관리전문기관: 한국에너지기술평가원Research management agency: Korea Institute of Energy Technology Evaluation
연구사업명: 신재생에너지핵심기술개발사업Research Project Name: New Renewable Energy Core Technology Development Project
연구과제명: 에너지 하베스팅 및 단열 성능을 고려한 창호형 태양광 모듈 개발Project Title: Development of window-type solar modules considering energy harvesting and insulation performance
기여율: 1/2Contribution rate: 1/2
주관기관: 전자부품연구원Organized by: Electronic Components Research Institute
연구기간: 2016. 12. 01 ~ 2019 . 11. 30Research Period: 2016. 12. 01 ~ 2019. 11. 30

Claims (20)

  1. 다중접합 태양전지의 제조방법에 있어서,In the manufacturing method of a multi-junction solar cell,
    에피성장용 기판 상부에 광흡수층을 형성시키는 제1단계;A first step of forming a light absorbing layer on the epi growth substrate;
    상기 광흡수층 상부에 후면전극을 형성시키는 제2단계;A second step of forming a back electrode on the light absorbing layer;
    상기 광흡수층으로부터 상기 에피성장용 기판을 제거하는 제3단계; 및A third step of removing the substrate for epitaxial growth from the light absorption layer; And
    상기 에피성장용 기판이 제거된 측의 광흡수층 상부에 전면전극을 형성하는 제4단계;를 포함하되,A fourth step of forming a front electrode on the light absorption layer on the side where the substrate for epi growth is removed; includes,
    상기 광흡수층은 서로 다른 흡수 파장을 갖는 N개의 서브셀(N은 2 이상의 자연수)로 이루어지며, 각 서브셀은 터널접합(Tunnel junction)되어 다중접합을 이루는 것을 특징으로 하는 다중접합 태양전지의 제조방법.The light absorbing layer is composed of N subcells having different absorption wavelengths (N is a natural number of 2 or more), and each subcell is tunnel junctiond to form a multijunction solar cell. Way.
  2. 제 1항에 있어서, 상기 서브셀은,The method of claim 1, wherein the sub-cell,
    빛이 입사되는 방향으로부터 단파장에서 장파장의 빛을 흡수하도록 배치되는 것을 특징으로 하는 다중접합 태양전지의 제조방법.A method of manufacturing a multi-junction solar cell, characterized in that it is arranged to absorb light of a long wavelength at a short wavelength from a direction in which light is incident.
  3. 제 1항에 있어서, 상기 터널접합은,According to claim 1, The tunnel junction,
    p-type과 n-type 반도체 물질의 접합으로 구성된 것을 특징으로 하는 다중접합 태양전지의 제조방법.A method of manufacturing a multi-junction solar cell, characterized by consisting of a junction of p-type and n-type semiconductor materials.
  4. 제 1항에 있어서, 상기 터널접합은,According to claim 1, The tunnel junction,
    AlxGayInzAs 또는 AlxGayInzP 물질을 사용하는 것(여기서, x+y+z=1)을 특징으로 하는 다중접합 태양전지의 제조방법.A method of manufacturing a multi-junction solar cell, characterized by using Al x Ga y In z As or Al x Ga y In z P materials (here, x+y+z=1).
  5. 제 1항에 있어서, 상기 터널접합을 이루는 반도체 물질의 도핑 농도는 1×1019cm-3 ~ 1×1022cm-3 이상인 것을 특징으로 하는 다중접합 태양전지의 제조방법.The method of claim 1, wherein the doping concentration of the semiconductor material forming the tunnel junction is 1×10 19 cm -3 to 1×10 22 cm -3 or more.
  6. 제 1항에 있어서, 상기 터널접합을 이루는 반도체 물질의 두께는 10nm~100nm 인 것을 특징으로 하는 다중접합 태양전지의 제조방법.The method of claim 1, wherein the thickness of the semiconductor material forming the tunnel junction is 10 nm to 100 nm.
  7. 제 1항에 있어서, 상기 터널접합을 이루는 반도체 물질의 밴드갭은 상기 터널접합 하부에 위치하는 서브셀의 밴드갭보다 상대적으로 큰 것을 특징으로 하는 다중접합 태양전지의 제조방법.The method of claim 1, wherein the band gap of the semiconductor material forming the tunnel junction is relatively larger than the band gap of the subcell located under the tunnel junction.
  8. 제 1항에 있어서, 상기 광흡수층을 형성하기 전에,According to claim 1, Before forming the light absorbing layer,
    상기 에피성장용 기판 상부에 희생층을 먼저 형성하는 것을 특징으로 하는 다중접합 태양전지의 제조방법.A method of manufacturing a multi-junction solar cell, comprising first forming a sacrificial layer on the epi growth substrate.
  9. 제 1항에 있어서, 상기 다중접합 태양전지를 이종기판에 전사하는 것을 특징으로 하는 다중접합 태양전지의 제조방법.The method of claim 1, wherein the multi-junction solar cell is transferred to a heterogeneous substrate.
  10. 제 9항에 있어서, 상기 이종기판은,10. The method of claim 9, The heterogeneous substrate,
    실리콘, 유리, quartz, 메탈 호일, 플라스틱 필름 중 어느 하나인 것을 특징으로 하는 다중접합 태양전지의 제조방법.Method of manufacturing a multi-junction solar cell, characterized in that any one of silicon, glass, quartz, metal foil, and plastic film.
  11. 다중접합 태양전지에 있어서,In a multi-junction solar cell,
    광흡수층은 서로 다른 흡수 파장을 갖는 N개의 서브셀(N은 2 이상의 자연수)로 이루어지며, 각 서브셀은 터널접합(Tunnel junction)되어 다중접합을 이루는 것을 특징으로 하는 다중접합 태양전지.The light absorbing layer is composed of N subcells having different absorption wavelengths (N is a natural number of 2 or more), and each subcell is a tunnel junction (Tunnel junction) to form a multiple junction solar cell.
  12. 제 11항에 있어서, 상기 서브셀은,The method of claim 11, wherein the sub-cell,
    빛이 입사되는 방향으로부터 단파장에서 장파장의 빛을 흡수하도록 배치되는 것을 특징으로 하는 다중접합 태양전지.A multi-junction solar cell arranged to absorb light of a long wavelength at a short wavelength from a direction in which light is incident.
  13. 제 11항에 있어서, 상기 터널접합은,The method of claim 11, wherein the tunnel junction,
    p-type과 n-type 반도체 물질의 접합으로 구성된 것을 특징으로 하는 다중접합 태양전지.A multi-junction solar cell comprising a junction of p-type and n-type semiconductor materials.
  14. 제 11항에 있어서, 상기 터널접합은,The method of claim 11, wherein the tunnel junction,
    AlxGayInzAs 또는 AlxGayInzP 물질을 사용하는 것(여기서, x+y+z=1)을 특징으로 하는 다중접합 태양전지.A multi-junction solar cell characterized by using Al x Ga y In z As or Al x Ga y In z P materials (here, x+y+z=1).
  15. 제 11항에 있어서, 상기 터널접합을 이루는 반도체 물질의 도핑 농도는 1×1019cm-3 ~ 1×1022cm-3 이상인 것을 특징으로 하는 다중접합 태양전지.The multi-junction solar cell according to claim 11, wherein the doping concentration of the semiconductor material forming the tunnel junction is 1×10 19 cm -3 to 1×10 22 cm -3 or more.
  16. 제 11항에 있어서, 상기 터널접합을 이루는 반도체 물질의 두께는 10nm~100nm 인 것을 특징으로 하는 다중접합 태양전지.The multi-junction solar cell according to claim 11, wherein a thickness of the semiconductor material forming the tunnel junction is 10 nm to 100 nm.
  17. 제 11항에 있어서, 상기 터널접합을 이루는 반도체 물질의 밴드갭은 상기 터널접합 하부에 위치하는 서브셀의 밴드갭보다 상대적으로 큰 것을 특징으로 하는 다중접합 태양전지.12. The multi-junction solar cell of claim 11, wherein a band gap of the semiconductor material forming the tunnel junction is relatively larger than a band gap of a subcell located under the tunnel junction.
  18. 제 11항에 있어서, 상기 광흡수층을 형성하기 전에,12. The method of claim 11, Before forming the light absorbing layer,
    상기 에피성장용 기판 상부에 희생층을 먼저 형성하는 것을 특징으로 하는 다중접합 태양전지.A multi-junction solar cell comprising first forming a sacrificial layer on the epi growth substrate.
  19. 제 11항에 있어서, 상기 다중접합 태양전지를 이종기판에 전사하는 것을 특징으로 하는 다중접합 태양전지.The multi-junction solar cell according to claim 11, wherein the multi-junction solar cell is transferred to a heterogeneous substrate.
  20. 제 19항에 있어서, 상기 이종기판은,The heterogeneous substrate of claim 19,
    실리콘, 유리, quartz, 메탈 호일, 플라스틱 필름 중 어느 하나인 것을 특징으로 하는 다중접합 태양전지.Multi-junction solar cell, characterized in that it is any one of silicon, glass, quartz, metal foil, and plastic film.
PCT/KR2019/004862 2018-12-27 2019-04-23 Method for manufacturing multi-junction solar cell, and multi-junction solar cell manufactured by same WO2020138597A1 (en)

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