WO2020136994A1 - 圧電トランスデューサ - Google Patents

圧電トランスデューサ Download PDF

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Publication number
WO2020136994A1
WO2020136994A1 PCT/JP2019/033431 JP2019033431W WO2020136994A1 WO 2020136994 A1 WO2020136994 A1 WO 2020136994A1 JP 2019033431 W JP2019033431 W JP 2019033431W WO 2020136994 A1 WO2020136994 A1 WO 2020136994A1
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WIPO (PCT)
Prior art keywords
plate
beam portions
layer
piezoelectric transducer
piezoelectric
Prior art date
Application number
PCT/JP2019/033431
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English (en)
French (fr)
Japanese (ja)
Inventor
伸介 池内
洋一 持田
文弥 黒川
青司 梅澤
永純 安達
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to DE112019006444.4T priority Critical patent/DE112019006444T5/de
Priority to CN201980083754.9A priority patent/CN113228708B/zh
Publication of WO2020136994A1 publication Critical patent/WO2020136994A1/ja

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • H04R7/10—Plane diaphragms comprising a plurality of sections or layers comprising superposed layers in contact

Definitions

  • the present invention relates to a piezoelectric transducer.
  • Patent Document 1 Japanese Patent Laid-Open No. 2016-536155
  • Patent Document 2 Japanese Patent Laid-Open No. 2017-22576
  • Patent Document 3 International Publication No. 2013/042316
  • the moving element is connected to the mechanical support by at least one bending portion associated with at least one piezoelectric member.
  • the piezoelectric member acts so as to be deformed by the electric field applied to the piezoelectric member. As a result, the bent portion to which the piezoelectric member is connected bends.
  • the piezoelectric transducer described in Patent Document 2 includes a base material, a piezoelectric thin film, an upper electrode, and a lower electrode.
  • the base material has a cavity.
  • the piezoelectric thin film is supported by the base material and has a movable film portion facing the cavity.
  • a slit is formed in the movable film portion.
  • the slit partitions the plurality of cantilevers and the weight portion into the movable film portion.
  • the plurality of cantilevers are arranged rotationally symmetrically with respect to a predetermined center of symmetry.
  • the weight portion is commonly coupled to the tip portions of the plurality of cantilevers, and has the center of gravity at the center of symmetry.
  • the upper electrode is arranged on one surface of the piezoelectric thin film.
  • the lower electrode is arranged on the other surface of the piezoelectric thin film.
  • the vibrating section has a vibrating plate, a piezoelectric element, a plurality of beams, and a fixed section.
  • the piezoelectric element is formed on at least one of the upper surface and the lower surface of the diaphragm.
  • the plurality of beams are provided on at least a part of the outer circumference of the diaphragm.
  • the fixed portion is provided outside the plurality of beams. Each of the plurality of beams is spirally formed in a diagonal direction from the diaphragm to the fixed portion.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a piezoelectric transducer that has improved input/output characteristics in the piezoelectric transducer that inputs and outputs via air vibration.
  • the piezoelectric transducer includes a base portion and a membrane portion.
  • the membrane part is indirectly supported by the base part and is located above the base part.
  • the membrane part does not overlap the base part.
  • the membrane part includes a plate part, a plurality of beam parts, and a base end part.
  • the plate-shaped portion has an outer peripheral side surface that extends in an annular shape when viewed in the vertical direction.
  • Each of the plurality of beam portions is connected to the outer peripheral side surface of the plate-shaped portion and extends away from the plate-shaped portion.
  • the plurality of beam portions are arranged at equal intervals in the circumferential direction of the outer peripheral side surface.
  • the base end portion is connected to the end portion on the opposite side to the plate-shaped portion side of each of the plurality of beam portions when viewed from the up-down direction, and is arranged concentrically with the plate-shaped portion and has an annular shape. is there.
  • At least one of the plate-shaped portion and the plurality of beam portions has a piezoelectric layer, an upper electrode layer, and a lower electrode layer.
  • the upper electrode layer is arranged above the piezoelectric layer.
  • the lower electrode layer is arranged so as to face at least a part of the upper electrode layer with the piezoelectric layer interposed therebetween.
  • each of the plurality of beam portions When viewed in the up-down direction, each of the plurality of beam portions has the same outer shape from the plate-shaped portion side to the base end portion side, and at least a part of the outer shape is curved.
  • a slit extending along the extending direction of the beam portions located on both sides is provided between the beam portions adjacent to each other in the circumferential direction of the plurality of beam portions.
  • FIG. 2 is a cross-sectional view of the piezoelectric transducer shown in FIG. 1 as seen from the direction of arrows II-II. It is a perspective view which shows the structure of the piezoelectric transducer which concerns on one Embodiment of this invention, omitting illustration of some members.
  • FIG. 4 is a cross-sectional view of the piezoelectric transducer shown in FIG. 3, as seen from the direction of arrows IV-IV.
  • FIG. 3 is a partially enlarged plan view of the piezoelectric transducer according to the embodiment of the present invention when viewed from above.
  • FIG. 6 is a cross-sectional view showing a state in which a lower electrode layer, a lower wiring layer, and a lower electrode pad are provided on the upper surface of an insulating layer in the method for manufacturing a piezoelectric transducer according to the embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing a state in which a piezoelectric layer is provided on upper surfaces of a lower electrode layer, a lower wiring layer, a lower electrode pad, and an insulating layer in the method for manufacturing a piezoelectric transducer according to the embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing a state in which a piezoelectric layer is provided on upper surfaces of a lower electrode layer, a lower wiring layer, a lower electrode pad, and an insulating layer in the method for manufacturing a piezoelectric transducer according to the embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing a state in which an upper electrode layer, an upper wiring layer, and an upper electrode pad are provided on the upper surface of the piezoelectric layer in the method for manufacturing a piezoelectric transducer according to the embodiment of the present invention.
  • FIG. 6 is a diagram showing a state in which slits are formed in each of the piezoelectric layer and the insulating layer in the method of manufacturing the piezoelectric transducer according to the embodiment of the present invention.
  • FIG. 6 is a diagram showing a state in which slits are formed in the support layer in the method of manufacturing the piezoelectric transducer according to the embodiment of the present invention.
  • FIG. 6 is a diagram showing a state in which a recess is formed in the lower base portion in the method of manufacturing the piezoelectric transducer according to the embodiment of the present invention.
  • FIG. 8 is a plan view of a piezoelectric transducer according to a first modified example of the embodiment of the present invention viewed from above.
  • FIG. 11 is a plan view of a piezoelectric transducer according to a second modified example of the embodiment of the present invention viewed from above. It is the top view which looked at the piezoelectric transducer concerning the 3rd modification of one embodiment of the present invention from the upper part.
  • FIG. 1 is a perspective view showing a configuration of a piezoelectric transducer according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the piezoelectric transducer shown in FIG. 1 as seen in the direction of arrows II-II. Note that, in FIG. 1, a section line in a direction of an arrow II-II is indicated by a two-dot chain line.
  • a piezoelectric transducer 100 includes a base 110 and a membrane 120.
  • the base 110 includes a lower base 111 and an upper base 112.
  • the upper base 112 is stacked on the lower base 111.
  • a recess 130 is formed in the lower base 111.
  • the lower base 111 is made of Si.
  • the upper base 112 is made of SiO 2 . Note that, in FIG. 1, the lower base portion 111 and the upper base portion 112 are not shown.
  • the membrane part 120 is located above the base part 110.
  • the membrane part 120 has a virtual outer peripheral edge 120s.
  • the base 110 when viewed from above and below, has an inner peripheral side surface 110s.
  • the inner peripheral side surface 110s of the base portion 110 is located immediately below the virtual outer peripheral edge 120s of the membrane portion 120. For this reason, the membrane part 120 does not overlap the base part 110 when viewed from the top and bottom.
  • the membrane part 120 is composed of a laminated body described later. When viewed from above and below, the laminate extends from the membrane portion 120 to the outer peripheral side. The extending portion of the laminated body is arranged on the upper surface of the base 110. In this way, the membrane part 120 is indirectly supported by the base part 110.
  • FIG. 3 is a perspective view showing the configuration of the piezoelectric transducer according to the embodiment of the present invention, with some of the members omitted.
  • FIG. 4 is a cross-sectional view of the piezoelectric transducer shown in FIG. 3 as seen from the direction of arrows IV-IV. Note that, in FIG. 3, a section line in a direction of an arrow IV-IV line is indicated by a two-dot chain line.
  • the membrane portion 120 includes a plate portion 121, a plurality of beam portions 122, and a base end portion 123. Further, as shown in FIG. 3, the membrane part 120 has a virtual circular outer shape when viewed from the up and down direction.
  • the plate-like portion 121 has an outer peripheral side surface 121s that extends in an annular shape when viewed from above and below.
  • the outer peripheral side surface 121s extends in an annular shape when viewed from above and below.
  • the plate-shaped portion 121 is displaced in the vertical direction during driving. The operation of the piezoelectric transducer 100 during driving will be described later.
  • Each of the plurality of beam portions 122 is connected to the outer peripheral side surface 121 s of the plate-shaped portion 121 and extends away from the plate-shaped portion 121.
  • the plurality of beam portions 122 are arranged at equal intervals in the circumferential direction of the outer peripheral side surface 121s.
  • the base end portion 123 is connected to the end portion on the side opposite to the plate-shaped portion 121 side of each of the plurality of beam portions 122 when viewed in the vertical direction, and is arranged concentrically with the plate-shaped portion 121. ..
  • the base end portion 123 has an annular shape when viewed from above and below. As shown in FIG. 4, in the present embodiment, the base end portion 123 is located inside the inner peripheral side surface 110s when viewed in the vertical direction.
  • each of the plurality of beam portions 122 has the same outer shape from the plate-shaped portion 121 side to the base end portion 123 side, and at least one of the outer shapes.
  • the part is curved.
  • each of the plurality of beam portions 122 has the same outer shape so as to be point-symmetric with respect to the center O of the plate-shaped portion 121.
  • the outer shapes of the plurality of beam portions 122 do not have to be exactly point-symmetric with respect to each other.
  • each of the plurality of beam portions 122 when viewed in the vertical direction, is curved with a constant curvature over the entire length from the end portion on the plate-shaped portion 121 side to the end portion on the base end portion 123 side. doing. Further, when the piezoelectric transducer 100 according to the present embodiment is viewed from above, each of the plurality of beam portions 122 is convexly curved to one side in the circumferential direction of the outer peripheral side surface 121s of the plate-shaped portion 121. That is, in the present embodiment, each of the plurality of beam portions 122 is curved so as to turn right when viewed from the base end portion 123 side.
  • the curved aspect of the plurality of beam portions 122 in the present embodiment is not limited to the above. A modified example in which the outer shapes of the plurality of beam portions 122 are changed will be described later.
  • a slit 124 that extends along the extending direction of the beam portions 122 located on both sides is provided between the beam portions 122 that are adjacent to each other in the circumferential direction of the plurality of beam portions 122.
  • the slit 124 extends from the outer peripheral side surface 121 s of the plate-shaped portion 121 to the base end portion 123.
  • the slits 124 extend while maintaining a constant spacing. As will be described later, as long as the displacements of the beam portions 122 on both sides during driving are substantially equal to each other, the slits 124 do not have to maintain a strictly constant interval.
  • the slit 124 is curved with a constant curvature over the entire length from the outer peripheral side surface 121 s of the plate-shaped portion 121 to the base end portion 123.
  • the plurality of beam portions 122 of the plurality of beam portions 122 are controlled so as to suppress the difference in radial displacement of the outer peripheral side surfaces 121s between the beam portions adjacent to each other via the slit 124 during driving.
  • the outer shape of each is determined.
  • FIG. 5 is a partially enlarged plan view of the piezoelectric transducer according to the embodiment of the present invention when viewed from above.
  • each of the plurality of beam portions 122 extends in the extending direction Ep at a portion 122p located at the center between the base end portion 123 and the plate-like portion 121 in the radial direction.
  • each of the plurality of beam portions 122 extends in the extending direction Eq in the portion 122q on the plate-shaped portion 121 side.
  • each of the plurality of beam portions 122 has a portion 122q closer to the plate-shaped portion 121 than a portion 122p located in the center between the base end portion 123 and the plate-shaped portion 121 in the radial direction. Is directed in the radial direction of the outer peripheral side surface 121s of the plate-like portion 121. Specifically, a portion 122p located in the center between the base end portion 123 and the plate-like portion 121 in the radial direction and a center O of the plate-like portion 121 are connected to each other and a virtual straight line Rp extending in the radial direction.
  • the angle formed by the virtual straight line Rq connecting the centers O to each other and extending in the radial direction and the extending direction Eq at the portion 122q on the plate-like portion 121 side is small.
  • each of the plurality of beam portions 122 when viewed in the vertical direction, includes the base end portion 123 and the plate-shaped portion 121 in the radial direction of the outer peripheral side surface 121 s of the plate-shaped portion 121.
  • the portion 122q on the plate-shaped portion 121 side is oriented in the radial direction more than the portion 122p located in the center of the space.
  • At least one of the plate-like portion 121 and the plurality of beam portions 122 has a piezoelectric layer 101, an upper electrode layer 102, and a lower electrode layer 103.
  • the plate-shaped portion 121 has the piezoelectric layer 101, the upper electrode layer 102, and the lower electrode layer 103.
  • the piezoelectric layer 101 is arranged on the entire plate-shaped portion 121 when viewed from the up and down direction.
  • the piezoelectric layer 101 may be made of a polycrystalline material or a single crystal material.
  • the piezoelectric layer 101 is made of a lead zirconate titanate (PZT)-based piezoelectric material, aluminum nitride (AlN), lithium niobate (LiNbO 3 ), lithium tantalate (LiTaO 3 ), or the like.
  • PZT lead zirconate titanate
  • the upper electrode layer 102 is arranged above the piezoelectric layer 101. As shown in FIG. 1, when viewed from above and below, the upper electrode layer 102 has a circular outer shape and is arranged so as to be concentric with the plate portion 121.
  • the upper electrode layer 102 is made of a conductive material such as Pt.
  • An adhesion layer made of Ti or the like may be arranged between the upper electrode layer 102 and the piezoelectric layer 101.
  • the lower electrode layer 103 is arranged so as to face at least a part of the upper electrode layer 102 with the piezoelectric layer 101 interposed therebetween.
  • the lower electrode layer 103 has a circular outer shape and is arranged so as to be concentric with the plate-like portion 121.
  • the radius of the lower electrode layer 103 may be larger than, smaller than, or the same as the radius of the upper electrode layer 102.
  • the lower electrode layer 103 is made of a conductive material such as Pt.
  • An adhesion layer made of Ti or the like may be arranged between the lower electrode layer 103 and the piezoelectric layer 101.
  • the plate-shaped portion 121 further includes an insulating layer 104 and a support layer 105.
  • the insulating layer 104 is arranged below each of the piezoelectric layer 101 and the lower electrode layer 103.
  • the material forming the insulating layer 104 is not particularly limited as long as it has an insulating property.
  • the insulating layer 104 is made of SiO 2 .
  • the support layer 105 is arranged on the lowermost side of the plate-like portion 121.
  • the support layer 105 is made of Si.
  • At least a part of the plurality of beam portions 122 includes an upper wiring layer 102x extending from the upper electrode layer 102 and a lower electrode layer. At least one of the lower wiring layers 103 x extended from 103 is provided.
  • each of the upper wiring layer 102x and the lower wiring layer 103x is arranged point-symmetrically with respect to the center O.
  • each of all the plurality of beam portions 122 has the upper wiring layer 102x or the lower wiring layer 103x.
  • each of the upper wiring layer 102x and the lower wiring layer 103x is arranged on the plurality of beam portions 122 so as to be staggered in the circumferential direction of the outer peripheral side surface 121s of the plate-shaped portion 121.
  • the upper wiring layer 102x extends along the beam portion 122. As shown in FIGS. 1 and 3, the upper wiring layer 102x is arranged so as to further extend from the beam portion 122 toward the base end portion 123 side.
  • the upper wiring layer 102x extending along each of some of the beam portions 122 of the plurality of beam portions 122 is an upper portion that extends along the circumferential direction of the base end portion 123 outside the base end portion 123. It is connected to the wiring layer 102y.
  • the upper wiring layer 102y extending in the circumferential direction is connected to the upper electrode pad 102z arranged further outside in the circumferential direction than the upper wiring layer 102y.
  • the lower wiring layer 103x extends along the beam portion 122. As shown in FIGS. 1 and 3, the lower wiring layer 103x is arranged so as to further extend from the beam portion 122 toward the base end portion 123 side.
  • the lower wiring layer 103x extending along each of the some beam portions 122 of the plurality of beam portions 122 is a lower portion that extends along the circumferential direction of the base end portion 123 outside the base end portion 123. It is connected to the wiring layer 103y.
  • the lower wiring layer 103y extending in the circumferential direction is connected to the lower electrode pad 103z arranged on the outer peripheral side of the lower wiring layer 103y.
  • the lower electrode pad 103z is not exposed on the surface, but it may be exposed on the surface for connecting with an external electrode.
  • each of the plurality of beam portions 122 further includes a piezoelectric layer 101, an insulating layer 104, and a support layer 105.
  • the portion forming the beam portion 122 is continuous with the portion forming the plate-like portion 121.
  • the upper wiring layer 102x is arranged above the piezoelectric layer 101.
  • the lower wiring layer 103x is arranged below the piezoelectric layer 101.
  • the upper wiring layer 102x and the lower wiring layer 103x are arranged so as not to face each other in the vertical direction.
  • the base end portion 123 has the piezoelectric layer 101, the upper wiring layer 102x, the lower wiring layer 103x, the insulating layer 104, and the support layer 105. In these layers, the portion forming the base end portion 123 is continuous with the portion forming the beam portion 122.
  • the laminated body including the piezoelectric layer 101, the upper wiring layer 102x, the lower wiring layer 103x, the insulating layer 104, and the support layer 105 has a base end portion 123. It extends further to the outer peripheral side and is supported by the base 110.
  • the operation of the piezoelectric transducer 100 according to the present embodiment during driving will be described.
  • a voltage is applied to each of the upper electrode pad 102z and the lower electrode pad 103z.
  • a voltage is applied to each of the upper electrode layer 102 and the lower electrode layer 103 through each of the upper wiring layers 102x and 102y and the lower wiring layers 103x and 103y.
  • a voltage is applied to the piezoelectric layer 101 in the plate-like portion located between the upper electrode layer 102 and the lower electrode layer 103.
  • the plate-like portion 121 having the piezoelectric layer 101 constrained by the upper electrode layer 102, the lower electrode layer 103, and the insulating layer 104 flexurally vibrates in the vertical direction.
  • the piezoelectric transducer 100 is driven.
  • FIG. 6 is a cross-sectional view showing a state in which a lower electrode layer, a lower wiring layer, and a lower electrode pad are provided on the upper surface of an insulating layer in the method for manufacturing a piezoelectric transducer according to the embodiment of the present invention.
  • the lower electrode layer 103, the lower wiring layers 103x and 103y, and the lower electrode pad 103z are provided on the upper surface of the insulating layer 104 by a lift-off method, a plating method, an etching method, or the like.
  • the lower electrode pad 103z is not shown in FIG.
  • the laminate having the lower base 111, the upper base 112 and the support layer 105 is prepared in advance as a so-called SOI (Silicon on Insulator) substrate.
  • the insulating layer 104 is provided on the upper surface of the support layer 105 of the SOI substrate by a CVD (Chemical Vapor Deposition) method, a PVD (Physical Vapor Deposition) method, or the like.
  • FIG. 7 is a cross-sectional view showing a state in which a piezoelectric layer is provided on upper surfaces of a lower electrode layer, a lower wiring layer, a lower electrode pad, and an insulating layer in a method of manufacturing a piezoelectric transducer according to an embodiment of the present invention.
  • a piezoelectric (Chemical Vapor Deposition) method or a PVD (Physical Vapor Deposition) method is used to form a piezoelectric layer on the upper surface of the lower electrode layer 103, the lower wiring layers 103x and 103y, the lower electrode pad 103z, and the insulating layer 104.
  • the body layer 101 is provided.
  • the lower electrode pad 103z is not shown in FIG.
  • the lower electrode layer 103, the lower wiring layers 103x and 103y, the lower electrode pad 103z, the insulating layer 104, and the piezoelectric layer 101 are different from the above-described steps. May be laminated.
  • a piezoelectric single crystal substrate prepared separately from the SOI substrate is formed by a lift-off method, a plating method, an etching method, or the like. Then, the lower wiring layers 103x and 103y and the lower electrode pad 103z are laminated.
  • An insulating layer 104 is laminated on the lower surface of each of the piezoelectric single crystal substrate, the lower wiring layers 103x and 103y, and the lower electrode pad 103z by the CVD method or the PVD method.
  • the lower surface of the insulating layer 104 is flattened by chemical mechanical polishing (CMP) or the like, and then bonded to the upper surface of the support layer 105. Then, the upper surface of the piezoelectric single crystal substrate is ground by CMP or the like, and the piezoelectric single crystal substrate is adjusted to a desired thickness, whereby the piezoelectric layer 101 is formed.
  • CMP chemical mechanical polishing
  • FIG. 8 is a cross-sectional view showing a state in which an upper electrode layer, an upper wiring layer, and an upper electrode pad are provided on the upper surface of the piezoelectric layer in the method for manufacturing a piezoelectric transducer according to the embodiment of the present invention.
  • the upper electrode layer 102, the upper wiring layers 102x and 102y, and the upper electrode pad 102z are provided on the upper surface of the piezoelectric layer 101 by a lift-off method, a plating method, an etching method, or the like.
  • FIG. 9 is a diagram showing a state in which slits are formed in each of the piezoelectric layer and the insulating layer in the method of manufacturing the piezoelectric transducer according to the embodiment of the present invention.
  • the piezoelectric layer 101 and the insulating layer 104 are patterned by a lift-off method or an etching method.
  • the slits 124 are formed in each of the piezoelectric layer 101 and the insulating layer 104.
  • FIG. 10 is a diagram showing a state in which a slit is formed in the support layer in the method of manufacturing the piezoelectric transducer according to the embodiment of the present invention.
  • each of the support layers 105 is patterned by a lift-off method or an etching method.
  • the slits 124 are formed in the support layer 105.
  • FIG. 11 is a diagram showing a state in which a recess is formed in the lower base portion in the method of manufacturing the piezoelectric transducer according to the embodiment of the present invention.
  • Deep RIE deep reactive ion etching
  • the recess 130 is formed in the upper base 112 by performing reactive ion etching from the lower surface of the upper base 112 to the upper base 112. Through these steps, the membrane part 120 in this embodiment is formed, and the piezoelectric transducer 100 according to one embodiment of the present invention as shown in FIG. 2 is manufactured.
  • the plurality of beam portions 122 are arranged at equal intervals in the circumferential direction of the outer peripheral side surface 121s. Further, when viewed in the vertical direction, each of the plurality of beam portions 122 has the same outer shape with respect to the center O of the plate-shaped portion 121 from the plate-shaped portion 121 side to the base end portion 123 side, and At least part of which is curved. Between the beam portions 122 adjacent to each other in the circumferential direction of the plurality of beam portions 122, slits 124 extending along the extending direction of the beam portions 122 located on both sides are provided.
  • the piezoelectric transducer 100 when the piezoelectric transducer 100 is driven, the displacement amounts of the beam portions 122 adjacent to each other in the circumferential direction among the plurality of beam portions 122 become substantially equal to each other. That is, when viewed from the circumferential direction of the outer peripheral side surface 121s of the plate-like portion 121, the gap between the beam portions 122 adjacent to each other does not widen. Therefore, when the piezoelectric transducer 100 is driven, it is possible to prevent air from leaking from between the beam portions 122 adjacent to each other, and it is possible to improve the input/output characteristics of the piezoelectric transducer 100.
  • the slits 124 between the beam portions 122 adjacent to each other extend along the extending direction of the beam portions 122 located on both sides, a gap between the beam portions 122 adjacent to each other is created. Since it is possible to suppress the generation of a large portion, it is possible to suppress air from leaking from the gap between the beam portions 122 adjacent to each other. Therefore, in the piezoelectric transducer 100 which inputs and outputs via air vibration, the input/output characteristics of the piezoelectric transducer 100 can be improved.
  • the plate-shaped portion 121 has the piezoelectric layer 101, the upper electrode layer 102, and the lower electrode layer 103. At least a part of the plurality of beam portions 122 has at least one of the upper wiring layer 102x extending from the upper electrode layer 102 and the lower wiring layer 103x extending from the lower electrode layer 103.
  • the electrodes only on the plate-like portion 121 and drive the electrodes without disposing the electrodes on each of the plurality of beam portions 122, so that the conversion efficiency between the electric and mechanical of the piezoelectric transducer 100 is improved. Can be made.
  • the upper wiring layer 102x and the lower wiring layer 103x are arranged point-symmetrically with respect to the center O.
  • the symmetry of the membrane part 120 is improved when viewed from above and below, and when the piezoelectric transducer 100 is driven, the displacement amount of a part of the plate-shaped part 121 is suppressed from being different from other parts. Therefore, it is possible to maintain the symmetry of vibration of the plate-like portion 121 and improve the conversion efficiency between the electric and mechanical of the piezoelectric transducer 100.
  • the beam portion 122 having the upper wiring layer 102x and the beam portion 122 having the lower wiring layer 103x are different from each other.
  • the base 110 has the inner peripheral side surface 110s when viewed from above and below.
  • the base end portion 123 is located inside the inner peripheral side surface 110s when viewed in the vertical direction.
  • the length of each of the plurality of beam portions 122 can be maintained, so that the vibration symmetry of the plate-like portion 121 is maintained.
  • the electrical-mechanical conversion efficiency of the piezoelectric transducer 100 can be improved.
  • each of the plurality of beam portions 122 when viewed from above and below, includes the base end portion 123 and the plate portion 121 in the radial direction of the outer peripheral side surface 121s of the plate portion 121.
  • the portion 122q on the plate-like portion 121 side faces the radial direction more than the portion 122p located at the center of the space.
  • the gap between the beam portions 122 adjacent to each other in the circumferential direction of the outer peripheral side surface becomes large in the portion 122q on the plate-shaped portion 121 side where the distance from the base end portion 123 is long and the displacement amount is large. Can be suppressed.
  • the expansion of the gap between the beam portions 122 adjacent to each other in the circumferential direction of the outer peripheral side surface is located in the center between the base end portion 123 and the plate-like portion 121 in the radial direction. It is possible to improve the input/output characteristics of the piezoelectric transducer 100 by suppressing more in the section from the plate portion 121 to the plate portion 121.
  • the outer shape of each of the plurality of beam portions 122 when viewed in the vertical direction is not limited to the above.
  • modified examples of the outer shape of each of the plurality of beam portions 122 will be described.
  • FIG. 12 is a plan view of a piezoelectric transducer according to a first modified example of the embodiment of the present invention viewed from above.
  • each of the plurality of beam portions 122a has an outer peripheral side surface of the plate-shaped portion 121 when viewed from the up and down direction. It is convexly curved to the other side in the circumferential direction of 121s. That is, in the present modification, each of the plurality of beam portions 122a is curved so as to turn left when viewed from the base end portion 123 side.
  • FIG. 13 is a plan view of a piezoelectric transducer according to a second modified example of the embodiment of the present invention viewed from above.
  • each of the plurality of beam portions 122b is a portion on the side of the plate-like portion 121 when viewed in the vertical direction. Is convexly curved to the other side in the circumferential direction of the outer peripheral side surface 121s, and the portion on the base end 123 side is convexly curved to one side in the circumferential direction of the outer peripheral side surface 121s.
  • the end portion on the base end portion 123 side is curved so as to turn right and has a plate shape.
  • the end on the part 121 side is curved so as to turn left.
  • the stress concentrated on each of the portions can be relaxed, and the durability of the plurality of beam portions 122b can be improved.
  • FIG. 14 is a plan view of a piezoelectric transducer according to a third modified example of the embodiment of the present invention viewed from above.
  • each of the plurality of beam portions 122c has a plate-like portion 121 side portion in the circumferential direction of the outer peripheral side surface 121s. It is convexly curved to the other side, and the portion on the base end 123 side is convexly curved to one side in the circumferential direction of the outer peripheral side surface 121s.
  • the radius of curvature of each curved portion of the plurality of beam portions 122c according to the third modification is smaller than the radius of curvature of each curved portion of the plurality of beam portions 122b according to the second modification.
  • the connection portion between the beam portion 122c and the plate-shaped portion 121 and the connection portion between the beam portion 122c and the base end portion 123 are the plate-shaped portion.
  • the outer peripheral side surfaces 121 of 121 are aligned in the radial direction. Accordingly, when the piezoelectric transducer 100c is driven, the symmetry of vibration of the plate-shaped portion 121 can be maintained, and the conversion efficiency between the electric and mechanical of the piezoelectric transducer 100c can be improved.
  • each of the plurality of beam portions 122a to 122c is a plate.
  • the outer shape has the same outer shape from the shape portion 121 side to the base end portion 123 side, and at least a part of the outer shape is curved.
  • between the beam portions 122a to 122c that are adjacent to each other in the circumferential direction of the outer peripheral side surface extend along the extending direction of the beam portions 122a to 122c located on both sides.
  • a slit 124 is provided.
  • 100, 100a, 100b, 100c piezoelectric transducer 101 piezoelectric layer, 102 upper electrode layer, 102x, 102y upper wiring layer, 102z upper electrode pad, 103 lower electrode layer, 103x, 103y lower wiring layer, 103z lower electrode pad, 104 Insulating layer, 105 support layer, 110 base, 110s inner peripheral side, 111 lower base, 112 upper base, 120 membrane part, 120s virtual outer peripheral edge, 121 plate part, 121s outer peripheral side, 122, 122a, 122b, 122c beam Part, 122p base end side part, 122q plate-shaped part side part, 123 base end part, 124 slit, 130 recess, Ep, Eq extension direction, O center, Rp, Rq virtual straight line.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Micromachines (AREA)
PCT/JP2019/033431 2018-12-27 2019-08-27 圧電トランスデューサ WO2020136994A1 (ja)

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DE112019006444.4T DE112019006444T5 (de) 2018-12-27 2019-08-27 Piezoelektrischer wandler
CN201980083754.9A CN113228708B (zh) 2018-12-27 2019-08-27 压电换能器

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CN113543000A (zh) * 2021-06-30 2021-10-22 青岛芯笙微纳电子科技有限公司 一种mems压电芯片及mems器件

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JP2018133384A (ja) * 2017-02-14 2018-08-23 新日本無線株式会社 圧電素子
JP2018170697A (ja) * 2017-03-30 2018-11-01 新日本無線株式会社 圧電素子

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WO2013042316A1 (ja) * 2011-09-22 2013-03-28 パナソニック株式会社 指向性スピーカ
JP2018133384A (ja) * 2017-02-14 2018-08-23 新日本無線株式会社 圧電素子
JP2018170697A (ja) * 2017-03-30 2018-11-01 新日本無線株式会社 圧電素子

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CN113526456A (zh) * 2021-06-30 2021-10-22 青岛芯笙微纳电子科技有限公司 一种mems压电芯片及mems器件
CN113543000A (zh) * 2021-06-30 2021-10-22 青岛芯笙微纳电子科技有限公司 一种mems压电芯片及mems器件

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