WO2020134205A1 - Procédé de fabrication de diode électroluminescente à points quantiques, et encre à points quantiques - Google Patents

Procédé de fabrication de diode électroluminescente à points quantiques, et encre à points quantiques Download PDF

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WO2020134205A1
WO2020134205A1 PCT/CN2019/106140 CN2019106140W WO2020134205A1 WO 2020134205 A1 WO2020134205 A1 WO 2020134205A1 CN 2019106140 W CN2019106140 W CN 2019106140W WO 2020134205 A1 WO2020134205 A1 WO 2020134205A1
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quantum dot
ink
light
compound
emitting diode
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PCT/CN2019/106140
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Chinese (zh)
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张节
向超宇
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Tcl科技集团股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/50—Sympathetic, colour changing or similar inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present application relates to the field of display technology, in particular to a method for preparing quantum dot light-emitting diodes, and quantum dot ink.
  • Quantum dots also known as semiconductor nanocrystals, whose three-dimensional dimensions are in the nanometer range (1-100nm), is a kind of nanoparticle theory between bulk materials and molecules. Quantum dots have excellent optical properties such as high quantum yield, large molar extinction coefficient, good light stability, narrow half-peak width, wide excitation spectrum and controllable emission spectrum, and are very suitable for use as light-emitting materials for light-emitting devices. In recent years, due to its advantages of high light color purity, adjustable light emission color, and long service life, quantum dot fluorescent materials have been widely optimistic for the field of flat panel display, and have become a promising next-generation display and solid-state lighting source.
  • Quantum dot light emitting diode is a light-emitting device based on quantum dot material as a luminescent material. Due to its advantages of adjustable wavelength, narrow emission spectrum, high stability, high electroluminescence quantum yield, etc. A strong competitor of a generation of display technology.
  • the compatibility problem between the electron transport layer (especially the zinc oxide layer) is more serious.
  • the poorly compatible quantum dot light-emitting layer and the electronic functional layer (especially the zinc oxide layer) are prone to form a bulge at the interface, affecting the film-forming performance of the device, which in turn affects the light efficiency of the quantum dot light-emitting diode.
  • One of the purposes of the embodiments of the present application is to provide a method for preparing quantum dot light-emitting diodes, quantum dot ink, which aims to solve the poor compatibility between the existing quantum dot light-emitting diode quantum dot light-emitting layers and adjacent layers , A problem affecting the light efficiency of quantum dot light-emitting diodes.
  • a method for manufacturing a quantum dot light emitting diode including the following steps:
  • the quantum dot ink includes a solvent system and quantum dots dispersed in the solvent system, wherein the solvent system includes a non-polar solvent and a doping compound;
  • a cathode substrate or an anode substrate deposit the quantum dot ink on the cathode substrate or the anode substrate, perform a light treatment, and prepare a quantum dot light-emitting layer by annealing, wherein the doping compound is energy after light treatment Photolysis into ionic compounds.
  • the doping compound is selected from at least one of diphenyliodonium compounds and 1,2,3,4-thitriazole-5-mercapto salt compounds.
  • the diphenyl iodonium compound is selected from at least one of (Ph 2 I) 4 Sn 2 S 6 , (Ph 2 I) 2 CdCl 4 and (Ph 2 I) 2 MoO 4 .
  • the 1,2,3,4-thitriazole-5-mercapto salt compound is selected from at least one of NH 4 CS 2 N 3 , NaCS 2 N 3 and LiCS 2 N 3 .
  • the mass percentage of the doping compound is 0%-10%, but not 0.
  • the light source for the light treatment application is selected from ultraviolet light with a wavelength of 100-400 nm and/or visible light with a wavelength of 400-500 nm; and/or
  • the illumination treatment application light source has an illumination of 2000 lx-10000 lx; and/or
  • the time for performing the light treatment after depositing the quantum dot ink on the cathode substrate or the anode substrate is 10 minutes to 60 minutes.
  • the non-polar solvent is selected from toluene, n-heptane, n-hexane, chloroform, methylene chloride, cyclohexane, and trichloroethylene.
  • the mass percentage content of the quantum dot in the quantum dot ink is 0.05wt%-60wt%
  • the non-polar solvent accounts for 35%-99.9% by weight of the quantum dot ink
  • the doping compound accounts for 0.001%-10% by weight of the quantum dot ink.
  • the quantum dot ink has a quantum dot content of 0.5% to 20% by weight of the quantum dot ink.
  • the non-polar solvent accounts for 70% to 99% by weight of the quantum dot ink, and the doping compound accounts for 0.003% to 3% by weight of the quantum dot ink.
  • the mass content of the quantum dot in the quantum dot ink is 1wt%-10wt%
  • the non- The polar solvent accounts for 80% to 98% by weight of the quantum dot ink
  • the hetero compound accounts for 0.005% to 2% by weight of the quantum dot ink.
  • an ink characterized in that the quantum dot ink includes a solvent system and quantum dots dispersed in the solvent system, wherein the solvent system includes a non-polar solvent and a doping compound, wherein,
  • the doping compound is a compound that can be photolyzed into ions after being treated with light.
  • the quantum dot ink is composed of the quantum dot, the non-polar solvent, and the doping compound.
  • the doping compound is selected from at least one of diphenyliodonium compounds and 1,2,3,4-thitriazole-5-mercapto salt compounds.
  • the diphenyl iodonium compound is selected from at least one of (Ph 2 I) 4 Sn 2 S 6 , (Ph 2 I) 2 CdCl 4 and (Ph 2 I) 2 MoO 4 ;and / or
  • the 1,2,3,4-thitriazole-5-mercapto salt compound is selected from at least one of NH 4 CS 2 N 3 , NaCS 2 N 3 and LiCS 2 N 3 .
  • the quantum dot content of the quantum dot ink is 0.5 wt% -20wt%
  • the non-polar solvent accounts for 70wt%-99wt% of the quantum dot ink
  • the doping compound accounts for 0.003wt%-3wt of the quantum dot ink %.
  • the beneficial effect of the preparation method of the quantum dot light emitting diode provided by the embodiment of the present application is that the provided quantum dot ink contains a light-sensitive doping compound, and the quantum dot ink is deposited on the substrate and then subjected to light treatment.
  • the doping compound changes under light conditions and can be converted into ions, so that the contact angle of the quantum dot ink deposited on the substrate surface becomes smaller, and the surface film layer of the quantum dot light-emitting layer formed on the substrate surface is smoother, and Improve the compatibility between the quantum dot light-emitting layer and the adjacent layer, and improve the light efficiency of the quantum dot light-emitting diode.
  • FIG. 1 is a schematic flowchart of a method for manufacturing a quantum dot light-emitting diode according to an embodiment of the present application.
  • first and second are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as “first” and “second” may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of “plurality” is two or more, unless otherwise specifically limited.
  • some embodiments of the present application provide a method for manufacturing a quantum dot light-emitting diode, including the following steps:
  • the quantum dot ink includes a solvent system and quantum dots dispersed in the solvent system, wherein the solvent system includes a non-polar solvent and a doping compound;
  • the provided quantum dot ink contains a light-sensitive doping compound, and the quantum dot ink is deposited on the substrate and then subjected to light treatment.
  • the doping compound changes under light conditions, and can be converted into ions, so that the contact angle of the quantum dot ink deposited on the surface of the substrate becomes smaller, and the surface film layer of the quantum dot light-emitting layer formed on the surface of the substrate is smoother, thereby improving
  • the compatibility between the quantum dot light emitting layer and the adjacent layer improves the light efficiency of the quantum dot light emitting diode.
  • the quantum dot ink includes a solvent system and quantum dots dispersed in the solvent system, wherein the quantum dots are conventional quantum dots in the art, and the surface of the quantum dots usually contains organic body.
  • the solvent system for dispersing quantum dots includes conventional non-polar solvents, and the non-polar solvents are non-polar solvents, including toluene, n-heptane, n-hexane, chloroform, and methylene chloride , Cyclohexane and trichloroethylene, but not limited to this. On this basis, some doping compounds are also added to the solvent system.
  • the polarity of the solvent system is improved, because the doping compound can be converted into ions after the light treatment, which is a more polar ion than the doping compound, thereby reducing the surface of the quantum dot ink substrate
  • the contact angle forms a flat and uniform film layer, which ultimately improves the light efficiency of the quantum dot light-emitting diode.
  • the doping compound is selected from at least one of diphenyliodonium-based compounds and 1,2,3,4-thitriazole-5-mercapto salt-based compounds.
  • the diphenyliodonium compounds, 1,2,3,4-thitriazole-5-mercapto salt compounds can be converted into substances with enhanced polarity under light conditions, reducing The contact angle of the small quantum dot ink on the surface of the underlying film layer such as the electron transport layer improves the flatness of the film layer, and the converted substance does not interfere with the light emission of the quantum dot light-emitting diode.
  • the diphenyl iodonium compound is selected from at least one of (Ph 2 I) 4 Sn 2 S 6 , (Ph 2 I) 2 CdCl 4 , (Ph 2 I) 2 MoO 4 .
  • the 1,2,3,4-thitriazole-5-mercapto salt compound is selected from at least one of NH 4 CS 2 N 3 , NaCS 2 N 3 , and LiCS 2 N 3 .
  • a small amount of doping compound is added to the quantum dot ink, and after light treatment, the effect of reducing the contact angle of the quantum dot ink on the surface of the lower electron transport layer can be achieved.
  • the mass percentage content of the doping compound is 0-10%, but not 0. Since the substance formed after the conversion of the doping compound will remain in the quantum dot light-emitting layer, when the mass percentage of the doping compound exceeds 10%, the impurity content in the quantum dot light-emitting layer increases, which reduces the quantum The light effect of the point light emitting layer.
  • the mass percentage content of the quantum dot in the quantum dot ink is 0.05wt%-60wt%
  • the non-polar solvent accounts for 35%-99.9% by weight of the quantum dot ink
  • the doping compound accounts for 0.001%-10% by weight of the quantum dot ink.
  • the quantum dot content of the quantum dot ink is 0.5wt%-20wt%
  • the non-polar solvent mass content of the quantum dot ink is 70wt%- 99wt%
  • the mass percentage content of the doping compound in the quantum dot ink is 0.003wt%-3wt%.
  • the content of quantum dots in the quantum dot ink is 1wt%-10wt%, and the percentage of non-polar solvents in the quantum dot ink is 80wt%-98wt%,
  • the content of the hetero compound in the quantum dot ink is 0.005 wt% to 2 wt%.
  • a substrate provided with a cathode or an anode is provided for depositing quantum dot ink.
  • the selection of the substrate is not strictly limited, and a rigid substrate such as a glass substrate may be used; a flexible substrate such as a polyimide substrate or a polynorbornene substrate may also be used, but it is not limited thereto.
  • the anode substrate is a substrate provided with an anode.
  • the anode can be selected from conventional anode materials for light-emitting diodes.
  • the anode may use ITO, but it is not limited thereto.
  • the anode substrate is a substrate provided with a cathode.
  • the cathode can be selected from conventional cathode materials for light-emitting diodes.
  • the cathode may use metal electrodes, including but not limited to silver electrodes and aluminum electrodes.
  • the thickness of the cathode is 60-120 nm, and in some embodiments of the present application is 100 nm.
  • the embodiment of the present application deposits the quantum dot ink on the substrate, specifically, deposits the quantum dot ink on the surface of the substrate.
  • the inkjet printing method is used to deposit the quantum dot ink on the substrate.
  • the quantum dot ink can form a pre-made quantum dot light emitting layer on the surface of the electron transport layer.
  • the quantum dot ink is deposited on the cathode substrate or the anode substrate, followed by light treatment, and annealing to prepare a quantum dot light-emitting layer, so that the doping compound in the quantum dot ink is Changes under light conditions can be converted into ions, thereby adjusting the polarity of the solvent system in the quantum dot ink, reducing the contact angle of the quantum dot ink on the surface of the underlying film layer, such as the electron transport layer, improving the flatness of the film, thereby improving Light effect of quantum dot light emitting diode.
  • the light source for the light treatment application is selected from ultraviolet light with a wavelength of 100-400 nm and/or visible light with a wavelength of 400-500 nm.
  • the light-sensitive doping compound undergoes chemical changes and is converted into a more polar substance, thereby facilitating the spreading on the surface of the more polar underlying film layer such as the electron transport layer, The contact angle of the quantum dot ink on the surface of the electron transport layer is reduced, and the flatness of the quantum dot light emitting diode film layer is improved.
  • the light source used in the light treatment is selected from ultraviolet light with a wavelength of 100-400 nm, which is more conducive to the conversion of the doping compound into a more polar substance.
  • the light intensity has a certain influence on the functional layer of the quantum dot light emitting diode.
  • the pre-made quantum dot light-emitting layer is subjected to light treatment. If the illuminance is too high, it will have a certain impact on the formed functional materials such as quantum dot light-emitting materials, electron transport layers, etc., reducing the service life of the quantum dot light-emitting diode; if the illuminance is too low, the doped compound is converted The effect is not obvious.
  • the light treatment of the prefabricated quantum dot light-emitting layer is performed under the condition that the light source of the light treatment application has an illumination of 2000 lx-10000 lx.
  • the irradiation time of the pre-made quantum dot light-emitting layer is 10 minutes to 60 minutes, which can reduce the contact angle of the quantum dot ink on the surface of the electron transport layer.
  • the time of the light treatment is adjusted according to the change of the light intensity. The stronger the light intensity, the shorter the light processing time; the weaker the light intensity, the longer the light processing time.
  • the pre-made quantum dot light-emitting layer after the light treatment is subjected to annealing treatment, and the annealing method is performed according to a conventional method in the art to prepare a quantum dot light-emitting layer.
  • the thickness of the quantum dot light-emitting layer is 30-50 nm.
  • step S20 when an anode is provided on the substrate to form an anode substrate; in some embodiments, the anode substrate includes an anode provided on the substrate, and the anode surface is also provided with an empty A hole functional layer, the hole functional layer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • the hole injection layer and the hole transport layer are used to reduce the difficulty of hole injection, and the electron blocking layer is used to block excess electrons so that the excess electrons cannot reach the anode to form a leakage current, thereby improving the quantum dot light-emitting diode Current efficiency.
  • the material of the hole injection layer can be a conventional hole injection material, including but not limited to PEDOT:PSS.
  • the material of the hole transport layer may use conventional hole transport materials, including but not limited to organic materials such as NPB and TFB, and inorganic materials such as NiO and MoO 3 and their composites, and the thickness of the hole transport layer is 10-100nm.
  • a cathode substrate is formed when the cathode is disposed on the substrate; in some embodiments, the cathode substrate includes a cathode disposed on the substrate, and the cathode surface is also provided with electronic functions Layer, the electron functional layer includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer. Among them, the electron injection layer and the electron transport layer are used to reduce the difficulty of electron injection, and the hole blocking layer is used to block excess holes, so that the excess holes cannot reach the cathode to form a leakage current, thereby improving the quantum dot light-emitting diode Current efficiency.
  • the material of the electron injection layer may use conventional electron hole injection materials, including but not limited to LiF and CsF, and the thickness of the electron transport layer is 10-100 nm.
  • the material of the electron transport layer may be a conventional electron transport material, including but not limited to n-type zinc oxide, and the thickness of the electron transport layer is 10-100 nm.
  • step S20 when the cathode is disposed on the substrate to form the cathode substrate, after preparing the quantum dot light-emitting layer, and before preparing the anode, further including the quantum dot light-emitting layer facing away from the cathode.
  • the hole functional layer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • the method when the cathode is provided on the substrate to form the cathode substrate, after preparing the quantum dot light-emitting layer and before preparing the anode, the method further includes: a side of the quantum dot light-emitting layer facing away from the cathode A hole transport layer is prepared, and a hole injection layer is prepared on the side of the hole transport layer facing away from the cathode.
  • the solution processing method is used for preparation.
  • Embodiments of the present application also provide a quantum dot ink.
  • the quantum dot ink includes a solvent system and quantum dots dispersed in the solvent system, wherein the quantum dots are conventional quantum dots in the art, and the surface of the quantum dots usually contains organic ligands.
  • the solvent system used to disperse the quantum dots includes conventional non-polar solvents, which are non-polar solvents, including but not limited to toluene, n-heptane, n-hexane, chloroform, Dichloromethane, cyclohexane, trichloroethylene, etc. but not limited thereto. On this basis, some doping compounds are also added to the solvent system.
  • the polarity of the solvent system is improved, because the doping compound can be converted into ions after the light treatment, thereby reducing the contact angle of the surface of the quantum dot ink substrate, forming a flat and uniform film layer, and finally improving the quantum Point light-emitting diode light effect.
  • the doping compound is selected from at least one of diphenyliodonium-based compounds and 1,2,3,4-thitriazole-5-mercapto salt-based compounds.
  • the diphenyliodonium compounds, 1,2,3,4-thitriazole-5-mercapto salt compounds can be converted into substances with enhanced polarity under light conditions, reducing the quantum dot ink in the underlying film
  • the contact angle of the surface of the layer such as the electron transport layer improves the flatness of the film layer, and the converted substance does not interfere with the light emission of the quantum dot light-emitting diode.
  • the diphenyl iodonium compound is selected from at least one of (Ph 2 I) 4 Sn 2 S 6 , (Ph 2 I) 2 CdCl 4 , (Ph 2 I) 2 MoO 4 .
  • the 1,2,3,4-thitriazole-5-mercapto salt compound is selected from at least one of NH 4 CS 2 N 3 , NaCS 2 N 3 , and LiCS 2 N 3 .
  • a small amount of doping compound is added to the quantum dot ink, and after light treatment, the effect of reducing the contact angle of the quantum dot ink on the surface of the lower electron transport layer can be achieved.
  • the mass percentage content of the doping compound is 0-10%, but not 0. Since the substance formed after the conversion of the doping compound will remain in the quantum dot light-emitting layer, when the mass percentage of the doping compound exceeds 10%, the impurity content in the quantum dot light-emitting layer increases, which reduces the quantum The light effect of the point light emitting layer.
  • the mass percentage content of the doping compound is 0.1-2%.
  • the mass content of the quantum dot in the quantum dot ink is 0.05wt%-60wt%
  • the non-polar solvent accounts for the mass of the quantum dot ink
  • the percentage content is 35wt%-99.9wt%
  • the mass percentage content of the doping compound in the quantum dot ink is 0.001wt%-10wt%.
  • the quantum dot content of the quantum dot ink is 0.5wt%-20wt%, and the non-polar solvent mass content of the quantum dot ink is 70wt%- 99% by weight, the content percentage of the doping compound in the quantum dot ink is 0.003% to 3% by weight.
  • the content of quantum dots in the quantum dot ink is 1wt%-10wt%, and the percentage of non-polar solvents in the quantum dot ink is 80wt%-98wt%, The content of the hetero compound in the quantum dot ink is 0.005 wt% to 2 wt%.
  • a preparation method of quantum dot light-emitting diode includes the following steps:
  • a cathode substrate (a metal aluminum electrode provided on a glass substrate), prepare an electron injection layer (LiF) on the cathode substrate, and prepare an electron transport layer (ZnO) on the electron injection layer;
  • a hole transport layer (TFB) is prepared on the surface of the quantum dot light emitting layer facing away from the substrate, a hole injection layer (PEDOT:PSS) is prepared on the hole transport layer, and an anode is prepared on the hole injection layer (SED) ITO) to obtain quantum dot light-emitting diodes.
  • FTB hole transport layer
  • PEDOT:PSS hole injection layer
  • SED hole injection layer
  • a preparation method of quantum dot light-emitting diode includes the following steps:
  • a cathode substrate (a metal aluminum electrode provided on a glass substrate), prepare an electron injection layer (LiF) on the cathode substrate, and prepare an electron transport layer (ZnO) on the electron injection layer;
  • D13 Deposit quantum dot ink on the surface of the electron transport layer to form a prefabricated quantum dot light-emitting layer; perform light treatment on the prefabricated quantum dot light-emitting layer and anneal to prepare a quantum dot light-emitting layer, wherein the light source used in the light treatment is selected Self-emitted ultraviolet light with a wavelength of 250nm;
  • a preparation method of quantum dot light-emitting diode includes the following steps:
  • the doping compound is (Ph 2 I) 2 CdCl 4 ; in Example 3, the doping compound is (Ph 2 I) 2 MoO 4 ; in Example 4, the doping compound is LiCS 2 N 3 ; In Example 5, the doping compound is NH 4 CS 2 N 3 ;
  • a cathode substrate (a metal aluminum electrode provided on a glass substrate), prepare an electron injection layer (LiF) on the cathode substrate, and prepare an electron transport layer (ZnO) on the electron injection layer;
  • a hole transport layer (TFB) is prepared on the surface of the quantum dot light emitting layer facing away from the substrate, a hole injection layer (PEDOT: PSS) is prepared on the hole transport layer, and an anode is prepared on the hole injection layer (SED) ITO) to obtain quantum dot light-emitting diodes.
  • PEDOT: PSS hole injection layer
  • SED hole injection layer
  • a preparation method of quantum dot light-emitting diode includes the following steps:
  • a cathode substrate (a metal aluminum electrode provided on a glass substrate), prepare an electron injection layer (LiF) on the cathode substrate, and prepare an electron transport layer (ZnO) on the electron injection layer;
  • a hole transport layer (TFB) is prepared on the surface of the quantum dot light-emitting layer facing away from the substrate, a hole injection layer (PEDOT:PSS) is prepared on the hole transport layer, and an anode is prepared on the hole injection layer ( ITO) to obtain quantum dot light-emitting diodes.
  • FTB hole transport layer
  • PEDOT:PSS hole injection layer
  • ITO hole injection layer
  • the quantum dot light-emitting diode prepared by adding no doping compound to the quantum dot ink of Comparative Example 2 and the quantum dot light-emitting diode prepared by adding the doping compound to the quantum dot ink of Example 2-5 were tested respectively.
  • the EQE change of the quantum dot light-emitting diode (%) is shown in Table 2 below.
  • the quantum dot light-emitting diode prepared by adding a doping compound to the quantum dot ink has significantly improved EQE during the aging process.
  • the quantum dot light-emitting diodes prepared by adding doping compounds to quantum dot inks have improved luminous efficiency to varying degrees.
  • quantum dot light-emitting diodes containing (Ph 2 I) 2 MoO 4 components have the best external quantum efficiency and the best luminescence effectiveness.

Abstract

L'invention concerne un procédé de fabrication d'une diode électroluminescente à points quantiques. Le procédé consiste : à produire une encre à points quantiques, l'encre à points quantiques comprenant un système de solvants et des points quantiques dispersés dans le système de solvants, et le système de solvants comprenant un solvant non polaire et un composé de dopant; et à produire un substrat de cathode ou un substrat d'anode, à déposer l'encre à points quantiques sur le substrat de cathode ou sur le substrat d'anode et puis à procéder à un traitement par irradiation de lumière, et à recuire pour obtenir une couche électroluminescente à points quantiques, le composé de dopant pouvant être photo-dissocié en un composé ionique à la suite du traitement par irradiation de lumière.
PCT/CN2019/106140 2018-12-29 2019-09-17 Procédé de fabrication de diode électroluminescente à points quantiques, et encre à points quantiques WO2020134205A1 (fr)

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