WO2020133649A1 - Oled显示面板及oled显示装置 - Google Patents

Oled显示面板及oled显示装置 Download PDF

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Publication number
WO2020133649A1
WO2020133649A1 PCT/CN2019/075524 CN2019075524W WO2020133649A1 WO 2020133649 A1 WO2020133649 A1 WO 2020133649A1 CN 2019075524 W CN2019075524 W CN 2019075524W WO 2020133649 A1 WO2020133649 A1 WO 2020133649A1
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WIPO (PCT)
Prior art keywords
light
metal layer
area
oled display
display panel
Prior art date
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Ceased
Application number
PCT/CN2019/075524
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English (en)
French (fr)
Inventor
周阳
赵勇
金武谦
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/476,077 priority Critical patent/US11049923B2/en
Publication of WO2020133649A1 publication Critical patent/WO2020133649A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display panel and an OLED display device.
  • Organic light emitting diode display (Organic Light Emitting Display, OLED) has self-luminous, low driving voltage, high luminous efficiency, short response time, high definition and contrast, close to 180 ° viewing angle, wide use temperature range, can achieve flexible display and The large area full-color display and many other advantages are recognized by the industry as the most promising display device.
  • OLED can be divided into passive matrix OLED (Passive Matrix) OLED, PMOLED) and Active Matrix OLED (Active Matrix OLED, AMOLED) are two categories, namely direct addressing and thin film transistor (TFT) matrix addressing.
  • AMOLED has pixels arranged in an array, which is an active display type and has high luminous efficacy, and is generally used as a high-definition large-size display device.
  • OLED devices generally include: a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light emitting layer provided on the hole transport layer, An electron transport layer on the light-emitting layer, an electron injection layer provided on the electron transport layer, and a cathode provided on the electron injection layer.
  • the principle of light emission of OLED devices is that semiconductor materials and organic light-emitting materials are driven by an electric field, which causes light emission through carrier injection and recombination.
  • OLED devices usually use indium tin oxide (ITO) electrodes and metal electrodes as the anode and cathode of the device, respectively, under a certain voltage drive, electrons and holes are injected from the cathode and anode into the electron transport layer and hole transport layer, respectively.
  • ITO indium tin oxide
  • the electrons and holes migrate to the light-emitting layer through the electron-transport layer and the hole-transport layer, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules.
  • the latter emits visible light after radiation relaxation.
  • a conventional flexible OLED display panel generally has a TFT array layer on a flexible substrate 100, and then an OLED device layer on the TFT array layer.
  • the TFT array layer includes an active layer 210, a first metal layer 220, a second metal layer 230, a third metal layer 240 and an anode layer 250 in this order, between the first metal layer 220 and the second metal layer 230, the second metal A transparent insulating layer is provided between the layer 230 and the third metal layer 240 to be spaced apart.
  • the flexible substrate 100 is provided with a plurality of pixel areas arranged in an array and a non-light emitting area located outside the pixel area, the first metal layer 220 is used to form the gate of the TFT device, and a plurality of spaced first metal layer traces are provided 221, the second metal layer 230 is used to form a capacitor plate, and is provided with a plurality of spaced second metal layer traces 231, and the third metal layer 240 is used to form the source and drain of the TFT device, and is provided with a plurality of spaced Three metal layer traces 241, and the anode layer 250 include a plurality of anodes 251 respectively located above the plurality of pixel regions.
  • the first metal layer trace 221, the second metal layer trace 232, and the third metal layer trace 242 are all linear and randomly arranged.
  • the active layer 210, the first metal layer 220, and the second metal layer 230, The third metal layer 240 and the anode layer 250 are both opaque materials, which cannot transmit light, resulting in poor light transmittance of the OLED display panel. If the OLED display panel of this structure is provided on the side where the flexible substrate is provided When a camera with a photosensitive element captures light on the side of the OLED display panel away from the flexible substrate for imaging, the photosensitive element of the camera can obtain a smaller amount of light and the imaging quality is poor.
  • the object of the present invention is to provide an OLED display panel with high light transmittance.
  • Another object of the present invention is to provide an OLED display device whose OLED display panel has a higher light transmittance, which is beneficial to increase the amount of light obtained by the photosensitive element.
  • the present invention first provides an OLED display panel.
  • the OLED display panel includes a plurality of pixel areas arranged in an array and a non-light emitting area between the plurality of pixel areas;
  • the OLED display panel further includes a plurality of wires, at least part of the wires are curvedly arranged and enclose a plurality of light-transmitting regions, and the light-transmitting regions are corresponding to the non-light-emitting regions.
  • the OLED display panel includes multiple metal layers arranged in sequence, each metal layer includes a plurality of wires, and a portion of the wires of at least one metal layer is bent to surround a plurality of light-transmitting regions.
  • Part of the wires of at least two metal layers are bent to form a plurality of light-transmitting regions.
  • the width of the wire surrounding the light-transmitting area in the metal layer away from the pixel area and the light-transmitting area in the metal layer close to the pixel area The widths of the wires of the wires are equal; or, the width of the wires surrounding the light-transmitting area in the metal layer far from the pixel area is larger than the width of the wires surrounding the light-transmitting area in the metal layer close to the pixel area.
  • the width of the wire surrounding the light-transmitting area in the metal layer far from the pixel area is larger than that surrounding the light-transmitting area in the metal layer close to the pixel area
  • the width of the conductive wire, and the conductive wire surrounding the light-transmitting area in at least one metal layer includes a plurality of sub-conductors arranged at intervals.
  • the distance between the wire surrounding the light-transmitting area in the metal layer away from the pixel area and the center of the light-transmitting area is less than that in the metal layer close to the pixel area The distance between the wire surrounding the light-transmitting area and the center of the light-transmitting area.
  • the OLED display panel includes a substrate, an active layer provided on the substrate, a first metal layer provided on the substrate and the active layer, a first metal layer provided on the substrate, the active layer and the first metal layer An insulating layer, a second metal layer provided on the first insulating layer, a second insulating layer provided on the second metal layer and the first insulating layer, a third metal layer provided on the second insulating layer, A planarization layer on the third metal layer and the second insulation layer, and an anode layer provided on the planarization layer;
  • the active layer is disposed corresponding to the plurality of pixel regions;
  • the first metal layer includes a plurality of first wires;
  • the second metal layer includes a plurality of second wires; and
  • the third metal layer includes a plurality of A third wire;
  • the anode layer includes a plurality of spaced anodes, and each anode is disposed opposite to a pixel area;
  • At least part of the first wire is bent, at least part of the second wire is bent, and at least part of the third wire is bent, so as to enclose a plurality of light-transmitting regions.
  • the shape of the light-transmitting area is a circle, a polygon, a figure surrounded by a plurality of arcs, or a figure surrounded by at least one line segment and at least one arc.
  • Multiple light-transmitting areas are arranged in an array
  • a light-transmitting area is provided between adjacent four vertices of any four adjacent pixel areas; or, a light-transmitting area is provided between any two adjacent pixel areas in the same row of pixel areas; or, the same A light transmission area is provided between any two adjacent pixel areas in the column pixel area.
  • a groove is provided on a side of the substrate away from the pixel area, and the groove is used for placing a photosensitive element.
  • the invention also provides an OLED display device, comprising the above-mentioned OLED display panel and a photosensitive element provided on one side of the OLED display panel.
  • the OLED display panel of the present invention includes a plurality of pixel areas arranged in an array and a non-light emitting area between the plurality of pixel areas.
  • the OLED display panel further includes a plurality of wires, at least part of which The wires are bent and formed into a plurality of light-transmitting areas, and the light-transmitting areas are arranged corresponding to the non-light-emitting areas, so that the light transmittance of the OLED display panel of the present invention is greatly improved, which is beneficial to enhance the lining provided on the OLED display panel The amount of light obtained by the photosensitive element on the side far from the pixel area.
  • the OLED display device of the present invention has higher light transmittance, which is beneficial to increase the amount of light obtained by the photosensitive element.
  • FIG. 1 is a schematic top view of an existing OLED display panel
  • FIG. 2 is a schematic top view of the first embodiment of the OLED display panel of the present invention.
  • FIG. 3 is a schematic top view of the active layer and the underlying structure of the first embodiment of the OLED display panel of the present invention
  • FIG. 4 is a schematic top view of a first metal layer and a structure thereunder according to the first embodiment of the OLED display panel of the present invention
  • FIG. 5 is a schematic top view of the second metal layer and the underlying structure of the first embodiment of the OLED display panel of the present invention.
  • FIG. 6 is a schematic top view of a third metal layer and a structure thereunder according to the first embodiment of the OLED display panel of the present invention.
  • FIG. 7 is a cross-sectional view taken along line A-A' in FIG. 2;
  • FIG. 8 is a cross-sectional view taken along line B-B' in FIG. 2;
  • FIG. 9 is a schematic cross-sectional view of the first metal layer and the film layer above it after being cut along the line C-C' in FIG. 2;
  • FIG. 10 is a schematic diagram of the positional relationship between the pixel area of the substrate and the light-transmitting area in the second embodiment of the OLED display panel of the present invention.
  • FIG. 11 is a schematic diagram of the positional relationship between the pixel area of the substrate and the light-transmitting area in the third embodiment of the OLED display panel of the present invention.
  • FIG. 12 is a schematic diagram of the positional relationship between the pixel area of the substrate and the light-transmitting area in the fourth embodiment of the OLED display panel of the present invention.
  • FIG. 13 is a schematic diagram of the positional relationship between the pixel area of the substrate and the light-transmitting area in the fifth embodiment of the OLED display panel of the present invention.
  • FIG. 14 is a schematic diagram of the positional relationship between the pixel area of the substrate and the light-transmitting area in the sixth embodiment of the OLED display panel of the present invention.
  • FIG. 15 is a schematic cross-sectional view of two metal layers with wires surrounding a light-transmitting region in a seventh embodiment of an OLED display panel of the present invention.
  • 16 is a schematic cross-sectional view of two metal layers with wires surrounding a light-transmitting area in an eighth embodiment of an OLED display panel of the present invention at a light-transmitting area;
  • FIG. 17 is a schematic cross-sectional view of two metal layers with wires surrounding a light-transmitting area in a ninth embodiment of the OLED display panel of the present invention at a light-transmitting area.
  • the present invention provides a OLED Display panel, described OLED
  • the display panel includes a plurality of pixel areas arranged in an array 11 And located in multiple pixel areas 11 Non-luminous area 12 .
  • the display panel further includes a plurality of wires, at least part of which are bent and formed into a plurality of light-transmitting areas 121 , The light-transmitting area 121 With the non-luminous area 12 Corresponding settings.
  • the OLED The display panel includes multiple layers of metal layers arranged in sequence, each metal layer includes a plurality of wires, and a portion of the wires of at least one metal layer is bent to form a plurality of light-transmitting areas 121 .
  • part of the wires of at least two metal layers are bent to form a plurality of light-transmitting areas 121 .
  • the OLED Display panel including substrate 10 , On the substrate 10 Active layer 20 , On the substrate 10 Active layer 20 First metal layer 30 , On the substrate 10 Active layer 20 And the first metal layer 30 First insulating layer 40 , Located on the first insulating layer 40 Second metal layer 50 , Located on the second metal layer 50 And the first insulating layer 40 Second insulating layer 60 , Located on the second insulating layer 60
  • the third metal layer 70 Located in the third metal layer 70 And the second insulating layer 60
  • Planarization layer 80 Located on the planarization layer 80
  • Anode layer 90 As well as the anode layer 90
  • the light-emitting layer and the cathode layer (not shown) provided in this order.
  • the first metal layer 30 Includes multiple first wires 31 .
  • the second metal layer 50 Includes multiple second wires 51 .
  • the third metal layer 70 Includes multiple third wires 71 .
  • the anode layer 90 Multiple anodes including spaces 91 , Each anode 91 With a pixel area 11 Relative settings. Per pixel area 11 Including an anode 91 And the anode 91 On the light-emitting layer and the cathode layer.
  • Substrate 10 ⁇ First insulation layer 40 ⁇ Second insulation layer 60 , Flattening layer 80 Located in each light transmission area 121 The parts are made of transparent materials.
  • the substrate 10 Away from the pixel area 11 One side is provided with a groove (not shown), which is used to place the photosensitive element.
  • the substrate 10 It is a flexible substrate, specifically polyimide ( PI ), polyetherimide ( PEI ),Polyphenylene sulfide( PPS ), polyarylate ( PAR ) One or a combination of several.
  • PI polyimide
  • PEI polyetherimide
  • PPS Polyphenylene sulfide
  • PAR polyarylate
  • the active layer 20 The material can be amorphous silicon, low temperature polysilicon, oxide semiconductor, carbon nanotubes, graphene, etc.
  • any two have a light-transmitting area enclosed 121 In the metal layer of the wire, away from the pixel area 11
  • the metal layer is surrounded by a light-transmitting area 121 Wire and the light-transmitting area 121
  • the distance of the center is less than that close to the pixel area 11
  • the light-transmitting area is enclosed in the metal layer of 121 Wire and the light-transmitting area 121 The distance from the center.
  • the first metal layer 30 Surrounded by light-transmitting area 121
  • second metal layer 50 Surrounded by light-transmitting area 121 Second wire 51 With the light-transmitting area 121
  • the distance from the center is less than the third metal layer 70
  • Third wire 71 With the light-transmitting area 121 The distance from the center so that each light-transmitting area 121
  • the cross-section is shaped like an inverted trapezoid, when the light from the third metal layer 70 Side injection OLED When displaying the panel, the light will form a light-transmitting area 121 The side walls of the wires are reflected, making the light-transmitting area 121 Ability to converge light and improve OLED The penetration rate of the display panel
  • the light-transmitting area 121 The specific arrangement density can be selected according to actual needs, for example, please refer to the figure 10 In the second embodiment of the present invention, any four adjacent pixel areas can be provided 11 There is a light transmission area between the four adjacent vertices 121 , for another example, see the picture 11 In the third embodiment of the present invention, the same row of pixel areas 11 Any two adjacent pixel areas 11 There is a light transmission area 121 , For another example, see the picture 12 In the fourth embodiment of the present invention, the same column of pixel areas 11 Any two adjacent pixel areas 11 There is a light transmission area 121 , Or, please refer to the picture 13 In the fifth embodiment of the present invention, in the pixel regions of even columns 11 Set a light transmission area on the right 121 , For another example, see the picture 14 In the sixth embodiment of the present invention, in addition to 3 The pixel area of an integer multiple of the column 11 Every pixel area outside 11 On the right 121 .
  • part of the wires of at least two metal layers are bent to form a plurality of light-transmitting areas 121 , Any two have a light-transmitting area enclosed 121 In the metal layer of the wire, away from the pixel area 11 The metal layer is surrounded by a light-transmitting area 121 Wire 901 The width of the pixel area 11 The light-transmitting area is enclosed in the metal layer of 121 Wire 902 The width of the 121 The size of the wires is equal, which is convenient for the production of wires.
  • At least two metal layers are partially bent to form a plurality of light-transmitting areas 121 , Any two have a light-transmitting area enclosed 121 In the metal layer of the wire, away from the pixel area 11
  • the metal layer is surrounded by a light-transmitting area 121 Wire 901 'Is wider than the pixel area 11
  • the light-transmitting area is enclosed in the metal layer of 121 Wire 902
  • the width of the wire 902 Both sides can protrude from the wire 901 ’, making the wire 901 ’And wire 902 Both sides of ’can be used to enclose a light-transmitting area with a cross-sectional shape similar to an inverted trapezoid 121 .
  • At least two metal layers are partially bent to form a plurality of light-transmitting areas 121 , Any two have a light-transmitting area enclosed 121 In the metal layer of the wire, away from the pixel area 11
  • the metal layer is surrounded by a light-transmitting area 121 Wire 901 "Is wider than the pixel area 11
  • the light-transmitting area is enclosed in the metal layer of 121 Wire 902 ”Width, and at least one metal layer surrounds a light-transmitting area 121 Of the wire includes multiple sub-wires arranged at intervals, in the figure 17 In the illustrated embodiment, it is away from the pixel area 11
  • the metal layer is surrounded by a light-transmitting area 121 Wire 901 "Includes two sub-wires arranged at intervals 9011 ", by making the wire include multiple sub-wires to reduce the difficulty of increasing the width of the wire in the manufacturing process.
  • the light transmitting area 121 The shape is a circle, a polygon, a figure surrounded by a plurality of arcs, or a figure surrounded by at least one line segment and at least one arc, preferably a circle.
  • the display panel is formed by bending at least part of the wires therein and surrounding a plurality of light-transmitting areas 121 So that the light-transmitting area 121 With pixel area 11 Non-luminous area 12 Corresponding setting, which greatly improves the penetration rate, making the OLED Substrate of display panel 10 Away from pixel area 11 After placing the photosensitive element in the groove on one side, the light can penetrate more OLED The display panel enters the photosensitive element to increase the amount of light received by the photosensitive element.
  • the present invention also provides a OLED Display device, including the above OLED Display panel and set at OLED The photosensitive element on the side of the display panel. No longer right here OLED The structure of the display panel is repeatedly described.
  • the photosensitive element is provided in OLED Substrate of display panel 10 Away from pixel area 11 In the groove on the side.
  • the display device OLED At least part of the wires in the display panel are bent and formed into multiple light-transmitting areas 121 So that the light-transmitting area 121 With pixel area 11 Non-luminous area 12 Corresponding settings, which greatly improves OLED The transmittance of the display panel allows more light to penetrate OLED The display panel enters the photosensitive element to increase the amount of light received by the photosensitive element.

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Abstract

本发明提供一种 OLED显示面板及OLED显示装置。本发明的OLED显示面板包括呈阵列排布的多个像素区及位于多个像素区之间的非发光区，所述OLED显示面板还包括多条导线，至少部分所述导线弯曲设置并围成多个透光区，所述透光区与所述非发光区对应设置，从而本发明的OLED显示面板的透光率大大提升，有利于提升设置在OLED显示面板的衬底远离像素区一侧的感光元件获得的光量。

Description

OLED显示面板及OLED显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及OLED显示装置。
 背景技术
有机发光二极管显示装置（Organic Light Emitting Display，OLED）具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED（Passive Matrix OLED，PMOLED）和有源矩阵型OLED（Active Matrix OLED，AMOLED）两大类，即直接寻址和薄膜晶体管（TFT）矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡（ITO）电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
请参阅图1，现有的柔性OLED显示面板一般在柔性衬底100上设置TFT阵列层，而后在TFT阵列层上设置OLED器件层。TFT阵列层包括依次设置有源层210、第一金属层220、第二金属层230、第三金属层240及阳极层250，第一金属层220与第二金属层230之间、第二金属层230与第三金属层240之间设有透明的绝缘层以间隔开。柔性衬底100设有阵列排布的多个像素区及位于像素区外的非发光区，第一金属层220用于形成TFT器件的栅极，设有间隔的多个第一金属层走线221，第二金属层230用于形成电容极板，设有间隔的多个第二金属层走线231，第三金属层用240于形成TFT器件的源漏极，设有间隔的多个第三金属层走线241，阳极层250包括分别位于多个像素区上方的多个阳极251。第一金属层走线221、第二金属层走线232及第三金属层走线242均为直线状，且随机排布，有源层210、第一金属层220、第二金属层230、第三金属层240及阳极层250均为不透明材料，无法进行光的穿透，导致OLED显示面板的透光性较差，若在此种结构的OLED显示面板设有柔性衬底的一侧设置具有感光元件的摄像头以获取OLED显示面板远离柔性衬底一侧的光线进行成像时，摄像头的感光元件能够获取的光量较小，成像质量较差。
 技术问题
本发明的目的在于提供一种OLED显示面板，具有较高的透光率。
本发明的另一目的在于提供一种OLED显示装置，其OLED显示面板具有较高的透光率，有利于提升感光元件获得的光量。
 技术解决方案
为实现上述目的，本发明首先提供一种OLED显示面板，所述OLED显示面板包括呈阵列排布的多个像素区及位于多个像素区之间的非发光区；
所述OLED显示面板还包括多条导线，至少部分所述导线弯曲设置并围成多个透光区，所述透光区与所述非发光区对应设置。
所述OLED显示面板包括依次设置的多层金属层，每一金属层均包括多条导线，至少一层金属层的部分导线弯曲设置围成多个透光区。
至少两层金属层的部分导线弯曲设置围成多个透光区。
任意两个具有围成透光区的导线的金属层中，远离所述像素区的金属层中围成透光区的导线的宽度与靠近所述像素区的金属层中围成该透光区的导线的宽度相等；或者，远离所述像素区的金属层中围成透光区的导线的宽度大于靠近所述像素区的金属层中围成该透光区的导线的宽度。
任意两个具有围成透光区的导线的金属层中，远离所述像素区的金属层中围成透光区的导线的宽度大于靠近所述像素区的金属层中围成该透光区的导线的宽度，且至少一层金属层中围成透光区的导线包括间隔设置的多条子导线。
任意两个具有围成透光区的导线的金属层中，远离所述像素区的金属层中围成透光区的导线与该透光区中心的距离小于靠近所述像素区的金属层中围成该透光区的导线与该透光区中心的距离。
所述OLED显示面板包括衬底、设于衬底上的有源层、设于衬底及有源层上的第一金属层、设于衬底、有源层及第一金属层上的第一绝缘层、设于第一绝缘层上的第二金属层、设于第二金属层及第一绝缘层上的第二绝缘层、设于第二绝缘层上的第三金属层、设于第三金属层及第二绝缘层上的平坦化层以及设于平坦化层上的阳极层；
所述有源层与所述多个像素区对应设置；所述第一金属层包括多条第一导线；所述第二金属层包括多条第二导线；所述第三金属层包括多条第三导线；所述阳极层包括间隔的多个阳极，每一阳极与一像素区相对设置；
至少部分第一导线弯曲设置，至少部分第二导线弯曲设置，至少部分第三导线弯曲设置，从而围成多个透光区。
所述透光区的形状为圆形、多边形、多个弧线围成的图形或至少一个线段与至少一个弧线围成的图形。
多个透光区呈阵列式排布；
任意四个相邻的像素区相邻的四个顶点之间设有一个透光区；或者，同一行像素区中任意两个相邻的像素区之间设有一个透光区；或者，同一列像素区中任意两个相邻的像素区之间设有一个透光区。
所述衬底远离所述像素区的一侧设有凹槽，所述凹槽用于放置感光元件。
本发明还提供一种OLED显示装置，包括上述的OLED显示面板及设于OLED显示面板一侧的感光元件。
 有益效果
本发明的有益效果：本发明的OLED显示面板包括呈阵列排布的多个像素区及位于多个像素区之间的非发光区，所述OLED显示面板还包括多条导线，至少部分所述导线弯曲设置并围成多个透光区，所述透光区与所述非发光区对应设置，从而本发明的OLED显示面板的透光率大大提升，有利于提升设置在OLED显示面板的衬底远离像素区一侧的感光元件获得的光量。本发明的OLED显示装置具有较高的透光率，有利于提升感光元件获得的光量。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的OLED显示面板的俯视示意图；
图2为本发明的OLED显示面板的第一实施例的俯视示意图；
图3为本发明的OLED显示面板的第一实施例的有源层及其下方结构的俯视示意图；
图4为本发明的OLED显示面板的第一实施例的第一金属层及其下方结构的俯视示意图；
图5为本发明的OLED显示面板的第一实施例的第二金属层及其下方结构的俯视示意图；
图6为本发明的OLED显示面板的第一实施例的第三金属层及其下方结构的俯视示意图；
图7为沿图2中的A-A’线的剖视图；
图8为沿图2中的B-B’线的剖视图；
图9为沿图2中的C-C’线剖开后第一金属层及其上方膜层的剖视示意图；
图10为本发明的OLED显示面板的第二实施例中衬底的像素区与透光区的位置关系示意图；
图11为本发明的OLED显示面板的第三实施例中衬底的像素区与透光区的位置关系示意图；
图12为本发明的OLED显示面板的第四实施例中衬底的像素区与透光区的位置关系示意图；
图13为本发明的OLED显示面板的第五实施例中衬底的像素区与透光区的位置关系示意图；
图14为本发明的OLED显示面板的第六实施例中衬底的像素区与透光区的位置关系示意图；
图15为本发明的OLED显示面板的第七实施例中两层具有围成透光区的导线的金属层在一透光区处的剖视示意图；
图16为本发明的OLED显示面板的第八实施例中两层具有围成透光区的导线的金属层在一透光区处的剖视示意图；
图17为本发明的OLED显示面板的第九实施例中两层具有围成透光区的导线的金属层在一透光区处的剖视示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图 2 ，本发明提供一种 OLED 显示面板，所述 OLED 显示面板包括呈阵列排布的多个像素区 11 及位于多个像素区 11 之间的非发光区 12 。
所述 OLED 显示面板还包括多条导线，至少部分所述导线弯曲设置并围成多个透光区 121 ，所述透光区 121 与所述非发光区 12 对应设置。
具体地，所述 OLED 显示面板包括依次设置的多层金属层，每一金属层均包括多条导线，至少一层金属层的部分导线弯曲设置围成多个透光区 121 。
优选地，至少两层金属层的部分导线弯曲设置围成多个透光区 121 。
具体地，请参阅图 2 至图 9 ，在本发明的第一实施例中，所述 OLED 显示面板包括衬底 10 、设于衬底 10 上的有源层 20 、设于衬底 10 及有源层 20 上的第一金属层 30 、设于衬底 10 、有源层 20 及第一金属层 30 上的第一绝缘层 40 、设于第一绝缘层 40 上的第二金属层 50 、设于第二金属层 50 及第一绝缘层 40 上的第二绝缘层 60 、设于第二绝缘层 60 上的第三金属层 70 、设于第三金属层 70 及第二绝缘层 60 上的平坦化层 80 、设于平坦化层 80 上的阳极层 90 以及于阳极层 90 上依次设置的发光层及阴极层（未图示）。
所述有源层 20 与所述多个像素区 11 对应设置。所述第一金属层 30 包括多条第一导线 31 。所述第二金属层 50 包括多条第二导线 51 。所述第三金属层 70 包括多条第三导线 71 。所述阳极层 90 包括间隔的多个阳极 91 ，每一阳极 91 与一像素区 11 相对设置。每一像素区 11 包括一阳极 91 及设于该阳极 91 上的发光层及阴极层。
至少部分第一导线 31 弯曲设置，至少部分第二导线 51 弯曲设置，至少部分第三导线 71 弯曲设置，从而围成多个透光区 121 。衬底 10 、第一绝缘层 40 、第二绝缘层 60 、平坦化层 80 位于每一透光区 121 的部分均为透明材料。
具体地，所述衬底 10 远离所述像素区 11 的一侧设有凹槽（未图示），所述凹槽用于放置感光元件。
具体地，所述衬底 10 为柔性衬底，具体可以为聚酰亚胺（ PI ）、聚醚酰亚胺（ PEI ），聚苯硫醚（ PPS ）、聚芳酯（ PAR ）等中的一种或几种的组合。
具体地，所述有源层 20 的材料可以为用非晶硅、低温多晶硅、氧化物半导体、碳纳米管、石墨烯等。
具体地，在本发明中，当至少两层金属层的部分导线弯曲设置围成多个透光区 121 时，任意两个具有围成透光区 121 的导线的金属层中，远离所述像素区 11 的金属层中围成透光区 121 的导线与该透光区 121 中心的距离小于靠近所述像素区 11 的金属层中围成该透光区 121 的导线与该透光区 121 中心的距离。具体请参阅图 7 至图 9 ，在本发明的第一实施例中，第一金属层 30 围成透光区 121 的第一导线 31 与该透光区 121 中心的距离小于第二金属层 50 中围成该透光区 121 的第二导线 51 与该透光区 121 中心的距离，第二金属层 50 围成透光区 121 的第二导线 51 与该透光区 121 中心的距离小于第三金属层 70 中围成该透光区 121 的第三导线 71 与该透光区 121 中心的距离，从而使得每一透光区 121 的截面呈类似倒梯形的形状，当光线从第三金属层 70 一侧射入 OLED 显示面板时，光线会在围成透光区 121 的导线的侧壁产生反射，从而使得透光区 121 能够对光线进行会聚，提升 OLED 显示面板的穿透率。
具体地，请参阅图 10 至图 14 ，本发明中，透光区 121 具体的排布密度可以根据实际需求进行选择，例如请参阅图 10 ，在本发明的第二实施例中，可以设置任意四个相邻的像素区 11 相邻的四个顶点之间设有一个透光区 121 ，又例如，请参阅图 11 ，在本发明的第三实施例中，同一行像素区 11 中任意两个相邻的像素区 11 之间设有一个透光区 121 ，又例如，请参阅图 12 ，在本发明的第四实施例中，同一列像素区 11 中任意两个相邻的像素区 11 之间设有一个透光区 121 ，又或者，请参阅图 13 ，在本发明的第五实施例中，在偶数列的像素区 11 右侧设置一个透光区 121 ，又例如，请参阅图 14 ，在本发明的第六实施例中，在除了 3 的整数倍列的像素区 11 外的每一像素区 11 的右侧设置一个透光区 121 。
具体地，请参阅图 15 ，在本发明的第七实施例中，至少两层金属层的部分导线弯曲设置围成多个透光区 121 ，任意两个具有围成透光区 121 的导线的金属层中，远离所述像素区 11 的金属层中围成透光区 121 的导线 901 的宽度与靠近所述像素区 11 的金属层中围成该透光区 121 的导线 902 的宽度相等，通过使围成透光区 121 的导线尺寸相等，便于导线的制作。
具体地，请参阅图 16 ，在本发明的第八实施例中，至少两层金属层的部分导线弯曲设置围成多个透光区 121 ，任意两个具有围成透光区 121 的导线的金属层中，远离所述像素区 11 的金属层中围成透光区 121 的导线 901 ’的宽度大于靠近所述像素区 11 的金属层中围成该透光区 121 的导线 902 ’的宽度，从而导线 902 ’的两侧均可以突出于导线 901 ’，使得导线 901 ’及导线 902 ’的两侧均可以用于围成截面呈近似于倒梯形的形状的透光区 121 。
具体地，请参阅图 17 ，在本发明的第九实施例中，至少两层金属层的部分导线弯曲设置围成多个透光区 121 ，任意两个具有围成透光区 121 的导线的金属层中，远离所述像素区 11 的金属层中围成透光区 121 的导线 901 ”的宽度大于靠近所述像素区 11 的金属层中围成该透光区 121 的导线 902 ”的宽度，并且至少一层金属层中围成透光区 121 的导线包括间隔设置的多条子导线，在图 17 所示的实施例中为远离所述像素区 11 的金属层中围成透光区 121 的导线 901 ”包括两条间隔设置的子导线 9011 ”，通过使得导线包括多条子导线的方式降低制程中增加导线宽度的难度。
具体地，所述透光区 121 的形状为圆形、多边形、多个弧线围成的图形或至少一个线段与至少一个弧线围成的图形，优选为圆形。
需要说明的是，本发明的 OLED 显示面板通过使得其中的至少部分导线弯曲设置并围成多个透光区 121 ，使得透光区 121 与像素区 11 外的非发光区 12 对应设置，从而大大提升了穿透率，使得在本发明的 OLED 显示面板的衬底 10 远离像素区 11 的一侧的凹槽中放置感光元件后，光线能够更多地穿透 OLED 显示面板进入感光元件中，提升感光元件获取到的光量。
基于同一发明构思，本发明还提供一种 OLED 显示装置，包括上述的 OLED 显示面板及设于 OLED 显示面板一侧的感光元件。在此不再对 OLED 显示面板的结构进行重复性描述。
具体地，该感光元件设置在 OLED 显示面板的衬底 10 远离像素区 11 的一侧的凹槽中。
需要说明的是，本发明的 OLED 显示装置通过使得 OLED 显示面板中的至少部分导线弯曲设置并围成多个透光区 121 ，使得透光区 121 与像素区 11 外的非发光区 12 对应设置，从而大大提升了 OLED 显示面板的穿透率，使得光线能够更多地穿透 OLED 显示面板进入感光元件中，提升感光元件获取到的光量。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种OLED显示面板，包括呈阵列排布的多个像素区及位于多个像素区之间的非发光区；
    所述OLED显示面板还包括多条导线，至少部分所述导线弯曲设置并围成多个透光区，所述透光区与所述非发光区对应设置。
  2. 如权利要求1所述的OLED显示面板，包括依次设置的多层金属层，每一金属层均包括多条导线，至少一层金属层的部分导线弯曲设置围成多个透光区。
  3. 如权利要求2所述的OLED显示面板，其中，至少两层金属层的部分导线弯曲设置围成多个透光区。
  4. 如权利要求3所述的OLED显示面板，其中，任意两个具有围成透光区的导线的金属层中，远离所述像素区的金属层中围成透光区的导线的宽度与靠近所述像素区的金属层中围成该透光区的导线的宽度相等；或者，远离所述像素区的金属层中围成透光区的导线的宽度大于靠近所述像素区的金属层中围成该透光区的导线的宽度。
  5. 如权利要求3所述的OLED显示面板，其中，任意两个具有围成透光区的导线的金属层中，远离所述像素区的金属层中围成透光区的导线的宽度大于靠近所述像素区的金属层中围成该透光区的导线的宽度，且至少一层金属层中围成透光区的导线包括间隔设置的多条子导线。
  6. 如权利要求3所述的OLED显示面板，其中，任意两个具有围成透光区的导线的金属层中，远离所述像素区的金属层中围成透光区的导线与该透光区中心的距离小于靠近所述像素区的金属层中围成该透光区的导线与该透光区中心的距离。
  7. 如权利要求6所述的OLED显示面板，包括衬底、设于衬底上的有源层、设于衬底及有源层上的第一金属层、设于衬底、有源层及第一金属层上的第一绝缘层、设于第一绝缘层上的第二金属层、设于第二金属层及第一绝缘层上的第二绝缘层、设于第二绝缘层上的第三金属层、设于第三金属层及第二绝缘层上的平坦化层以及设于平坦化层上的阳极层；
    所述有源层与所述多个像素区对应设置；所述第一金属层包括多条第一导线；所述第二金属层包括多条第二导线；所述第三金属层包括多条第三导线；所述阳极层包括间隔的多个阳极，每一阳极与一像素区相对设置；
    至少部分第一导线弯曲设置，至少部分第二导线弯曲设置，至少部分第三导线弯曲设置，从而围成多个透光区。
  8. 如权利要求1所述的OLED显示面板，其中，所述透光区的形状为圆形、多边形、多个弧线围成的图形或至少一个线段与至少一个弧线围成的图形。
  9. 如权利要求1所述的OLED显示面板，其中，多个透光区呈阵列式排布；
    任意四个相邻的像素区相邻的四个顶点之间设有一个透光区；或者，同一行像素区中任意两个相邻的像素区之间设有一个透光区；或者，同一列像素区中任意两个相邻的像素区之间设有一个透光区。
  10. 如权利要求7所述的OLED显示面板，其中，所述衬底远离所述像素区的一侧设有凹槽，所述凹槽用于放置感光元件。
  11. 一种OLED显示装置，包括如权利要求1所述的OLED显示面板及设于OLED显示面板一侧的感光元件。
PCT/CN2019/075524 2018-12-25 2019-02-20 Oled显示面板及oled显示装置 Ceased WO2020133649A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023032490A1 (ja) * 2021-08-31 2023-03-09 三洋電機株式会社 非水電解質二次電池

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024145740A1 (zh) * 2023-01-03 2024-07-11 京东方科技集团股份有限公司 显示面板及其显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108269503A (zh) * 2018-03-26 2018-07-10 上海天马微电子有限公司 一种显示面板及显示装置
CN108509899A (zh) * 2018-03-29 2018-09-07 上海天马微电子有限公司 一种显示面板和显示装置
CN108594550A (zh) * 2018-04-25 2018-09-28 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102345470B1 (ko) * 2015-01-28 2021-12-31 삼성디스플레이 주식회사 표시장치
JP2017151339A (ja) * 2016-02-26 2017-08-31 株式会社ジャパンディスプレイ 表示装置
KR102572128B1 (ko) * 2016-03-14 2023-08-30 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102526110B1 (ko) * 2016-04-12 2023-04-27 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR102592857B1 (ko) * 2016-12-16 2023-10-24 삼성디스플레이 주식회사 표시패널 및 이를 포함하는 표시장치
CN106654047B (zh) * 2016-12-22 2019-02-01 武汉华星光电技术有限公司 Oled显示面板及其制作方法
CN108615746A (zh) * 2018-04-28 2018-10-02 武汉天马微电子有限公司 显示面板和显示装置
CN108878488B (zh) * 2018-06-26 2020-12-04 上海天马有机发光显示技术有限公司 一种显示面板和显示装置及显示面板的制作方法
CN108987451B (zh) * 2018-08-01 2021-09-24 京东方科技集团股份有限公司 显示面板及其控制方法和显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108269503A (zh) * 2018-03-26 2018-07-10 上海天马微电子有限公司 一种显示面板及显示装置
CN108509899A (zh) * 2018-03-29 2018-09-07 上海天马微电子有限公司 一种显示面板和显示装置
CN108594550A (zh) * 2018-04-25 2018-09-28 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023032490A1 (ja) * 2021-08-31 2023-03-09 三洋電機株式会社 非水電解質二次電池

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