WO2020133284A1 - Ensemble photovoltaïque et son procédé de fabrication - Google Patents

Ensemble photovoltaïque et son procédé de fabrication Download PDF

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Publication number
WO2020133284A1
WO2020133284A1 PCT/CN2018/125080 CN2018125080W WO2020133284A1 WO 2020133284 A1 WO2020133284 A1 WO 2020133284A1 CN 2018125080 W CN2018125080 W CN 2018125080W WO 2020133284 A1 WO2020133284 A1 WO 2020133284A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
photovoltaic module
layer
light reflecting
sheet
Prior art date
Application number
PCT/CN2018/125080
Other languages
English (en)
Chinese (zh)
Inventor
王同心
李威威
殷镭城
薛群山
沈一春
Original Assignee
中天科技精密材料有限公司
江苏中天科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中天科技精密材料有限公司, 江苏中天科技股份有限公司 filed Critical 中天科技精密材料有限公司
Priority to PCT/CN2018/125080 priority Critical patent/WO2020133284A1/fr
Publication of WO2020133284A1 publication Critical patent/WO2020133284A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the thickness of the substrate is 18-256 ⁇ m, and the thickness of the adhesive layer is 10-40 ⁇ m.
  • the apex angle of the cross section of the microstructure is 90°-135°, and the center-to-center distance between two adjacent microstructures is 40-60 ⁇ m.
  • FIG. 3 is a partial schematic view of a light reflection film in an embodiment of the invention.
  • Microstructure layer 73 Base 731 Microprism layer 733 microstructure 7331 Reflective layer 74
  • the non-cell sheet 40 area of the photovoltaic module 100 can be more fully utilized, so that the sunlight shining on the surface of the gap area of the battery sheet 40 can Under the action of the light reflecting film 70, total reflection occurs on the cell sheet 40, which increases the total amount of light received by the cell sheet 40 in the photovoltaic module 100, thereby increasing the output power of the photovoltaic module 100.
  • the microstructure layer 73 in the light reflection film 70 is used to reflect sunlight.
  • the microstructure layer 73 includes a base 731 and a microprism layer 733, wherein the thickness of the microprism layer 733 is Between 5-20 ⁇ m, the thickness of the base 731 is between 1-10 ⁇ m; the base 731 and the base layer 711 on the substrate 72 are bonded to each other, and the ridgeline of the microstructure layer 73 is The angle of the longitudinal direction of the base material 72 is between -90° and 90°. Preferably, the angle between the ridgeline of the microstructure layer 73 and the longitudinal direction of the substrate 72 is 45°.
  • the reflective layer 74 is a film layer formed by vacuum evaporation, magnetron sputtering, vacuum sputtering, and electroplating, wherein the metal used in the process of forming the reflective film 74 needs to have a light wavelength of 200 nm The average reflectance is higher in the range of ⁇ 1100nm.
  • the reflective layer 74 is a metal aluminum layer, which is produced by vacuum evaporation of high purity (99.9%) aluminum elemental method.
  • the battery sheet 40 is also provided with a plurality of main grid lines.
  • the ridge lines of the microstructure 7331 on the micro-prism layer 733 form an angle with the long side of the main grid line, and the included angle range is -90° to 90 °.
  • the angle formed between the ridge line of the microstructure 7331 on the microprism layer 733 and the long side of the main grid line is 45°.
  • the structure of a photovoltaic module 100 provided in Example 1 to Example 12 is basically the same as the above specific embodiment, the difference is that the thickness of each component on the microstructure layer 73 is different, and the specific performance is as follows:
  • multiple light reflective films 70 are simultaneously attached to the back plate 60; in other embodiments, a single pick light reflective film 70 may also be used Of the film.
  • the back sheet 60 is any one including a KPK back sheet, a KPO back sheet, a TPT back sheet, a fluorine-coated back sheet and a transparent back sheet One;
  • the photovoltaic module 100 is a double glass photovoltaic module 100, the back plate 60 is a glass plate, the light reflecting film 70 is attached to the smooth surface or glass embossed surface of the back plate 60.
  • S2 The front packaging board 10, the first packaging adhesive film 30, the battery layer, the second packaging adhesive film 50, and the back plate 60 with the light reflecting film 70 for the gap are stacked in this order from bottom to top, and laminated To complete the manufacture of photovoltaic module 100.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur un ensemble photovoltaïque (100) et son procédé de fabrication, l'ensemble photovoltaïque (100) comprenant une feuille d'encapsulation avant (10), un premier film adhésif d'encapsulation (30), une feuille de batterie (40), un second film adhésif d'encapsulation (50) et une feuille arrière (60) qui sont disposés successivement; un film réfléchissant la lumière (70) est également disposé sur une surface latérale du côté de la feuille arrière (60) adjacent au second film adhésif d'encapsulation (50), s'étend en continu le long d'un espace longitudinal ou latéral de la feuille de batterie (40), et est en forme de bande, sa plage de largeur étant comprise entre 2 et 30 mm, et sa plage d'épaisseur étant comprise entre 50 et 300 µm. Le film réfléchissant la lumière (70) disposé au niveau de l'espace longitudinal et de l'espace latéral de la feuille de batterie (40) permet d'exploiter efficacement la lumière solaire située au niveau des espaces de la feuille de batterie (40), et une zone sans feuille de batterie dans l'ensemble photovoltaïque (100) est pleinement exploitée, de telle sorte que la lumière solaire incidente dans l'ensemble photovoltaïque (100) est exploitée au maximum, ce qui permet d'augmenter efficacement la puissance de sortie de l'ensemble photovoltaïque (100).
PCT/CN2018/125080 2018-12-28 2018-12-28 Ensemble photovoltaïque et son procédé de fabrication WO2020133284A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/125080 WO2020133284A1 (fr) 2018-12-28 2018-12-28 Ensemble photovoltaïque et son procédé de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/125080 WO2020133284A1 (fr) 2018-12-28 2018-12-28 Ensemble photovoltaïque et son procédé de fabrication

Publications (1)

Publication Number Publication Date
WO2020133284A1 true WO2020133284A1 (fr) 2020-07-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/125080 WO2020133284A1 (fr) 2018-12-28 2018-12-28 Ensemble photovoltaïque et son procédé de fabrication

Country Status (1)

Country Link
WO (1) WO2020133284A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103413861A (zh) * 2013-07-18 2013-11-27 常州大学 一种光伏组件反光薄膜及其与焊带的固定方法
JP2013254992A (ja) * 2013-09-26 2013-12-19 Mitsubishi Electric Corp 光起電力素子モジュールおよびその製造方法
CN106449828A (zh) * 2016-12-22 2017-02-22 苏州高德辰光电科技有限公司 应用于光伏电池组件的背板及光伏电池组件
CN108598208A (zh) * 2018-05-03 2018-09-28 中天科技精密材料有限公司 一种太阳能反光膜及其制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103413861A (zh) * 2013-07-18 2013-11-27 常州大学 一种光伏组件反光薄膜及其与焊带的固定方法
JP2013254992A (ja) * 2013-09-26 2013-12-19 Mitsubishi Electric Corp 光起電力素子モジュールおよびその製造方法
CN106449828A (zh) * 2016-12-22 2017-02-22 苏州高德辰光电科技有限公司 应用于光伏电池组件的背板及光伏电池组件
CN108598208A (zh) * 2018-05-03 2018-09-28 中天科技精密材料有限公司 一种太阳能反光膜及其制作方法

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