WO2020132977A1 - Semiconductor package and electronic device - Google Patents

Semiconductor package and electronic device Download PDF

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Publication number
WO2020132977A1
WO2020132977A1 PCT/CN2018/124013 CN2018124013W WO2020132977A1 WO 2020132977 A1 WO2020132977 A1 WO 2020132977A1 CN 2018124013 W CN2018124013 W CN 2018124013W WO 2020132977 A1 WO2020132977 A1 WO 2020132977A1
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WIPO (PCT)
Prior art keywords
semiconductor package
semiconductor device
auxiliary structure
electrical connector
package according
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PCT/CN2018/124013
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French (fr)
Chinese (zh)
Inventor
葉冠宏
汤佳杰
林来存
邱士超
郝建霞
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华为技术有限公司
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2018/124013 priority Critical patent/WO2020132977A1/en
Publication of WO2020132977A1 publication Critical patent/WO2020132977A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

Definitions

  • the present application relates to the technical field of electronic packaging, in particular to a semiconductor package and electronic equipment.
  • Flip chip packaging technology is to electrically connect the bumps of the chip to the substrate. There is a gap between the chip and the substrate. In order to protect the chip and the bumps, the dispensing process will dispense glue around the chip. Under the action of the gap between the chip and the substrate and the capillary phenomenon produced by the underfill material, the primer material penetrates into the gap between the chip and the substrate to fill the underfill. However, when the bumps are unevenly distributed, the capillary phenomenon at the positions where the bumps are not distributed in the gap will be weakened, so that the primer cannot effectively fill the gap. Decreased reliability.
  • the embodiments of the present invention provide a semiconductor package and an electronic device, which are used to solve the problem that the filling property of the primer decreases due to uneven distribution of the bumps.
  • An aspect of an embodiment of the present application provides a semiconductor package, including a package substrate, a semiconductor device, a plurality of first electrical connectors, and a plurality of auxiliary structures.
  • the packaging substrate has an upper surface and a lower surface that are oppositely arranged.
  • the semiconductor device is located on the upper surface of the package substrate.
  • a plurality of first electrical connectors are arranged on the lower surface of the semiconductor device, and are used to electrically connect the semiconductor device and the packaging substrate.
  • a plurality of auxiliary structures are arranged on the upper surface of the packaging substrate and protrude from the upper surface of the packaging substrate. The orthographic projection of the auxiliary structure on the lower surface of the semiconductor device is located on the portion of the lower surface of the semiconductor device where the first electrical connector is not provided.
  • a plurality of auxiliary structures can be used to compensate for the insufficient distribution of the first electrical connector.
  • the primer material will penetrate into the gap between the semiconductor device and the packaging substrate in the direction of the arrow due to the capillary phenomenon.
  • a plurality of first electrical connectors and a plurality of auxiliary structures distributed in different positions in the gap between the semiconductor device and the package substrate can enhance the above capillary phenomenon, so that the primer material can further enter the gap Inside, and to the location where the first electrical connection and the auxiliary structure are distributed.
  • the primer material can fill the gaps approximately or completely, thereby improving the filling property of the primer.
  • the primer material can fill the gap approximately or completely, so there is no need to use a pressure oven to press the primer material into the gap between the semiconductor device and the packaging substrate. Therefore, the production cost can be saved.
  • the packaging substrate includes at least one metal wiring layer, and the metal wiring layer includes multiple metal wires.
  • the material constituting the auxiliary structure is a metallic material.
  • the auxiliary structure is in contact with the metal wires exposed on the upper surface of the packaging substrate. By contacting the auxiliary structure made of metal material with the metal wires exposed on the upper surface of the packaging substrate, the purpose of fixing the auxiliary structure is achieved.
  • the material of the auxiliary structure is the same as the material of the metal wire.
  • the materials constituting the auxiliary structure can be selected from the materials commonly used in the process of manufacturing the package substrate, thereby simplifying the manufacturing process.
  • the packaging substrate includes at least one metal wiring layer, and a solder resist layer covering the outermost metal wiring layer.
  • the material constituting the auxiliary structure is the same as the material of the solder resist layer. In this way, the materials constituting the auxiliary structure can be selected from the materials commonly used in the process of manufacturing the package substrate, thereby simplifying the manufacturing process.
  • the first electrical connector includes solder bumps, solder balls, or copper pillars.
  • the auxiliary structure has the same shape and external dimensions as the first electrical connector.
  • the gap between the semiconductor device and the package substrate can be further reduced, the primer material flows through the gap of the path, to achieve the above capillary phenomenon, and promote the primer material in the gap between the semiconductor device and the package substrate The purpose of the flow.
  • the spacing between any two adjacent auxiliary structures is the same as the spacing between two adjacent first electrical connectors among the plurality of first electrical connectors.
  • the plurality of first electrical connectors and the plurality of auxiliary structures may be approximately uniformly distributed in the gap between the semiconductor device and the package substrate.
  • the primer material enters the gap between the semiconductor device and the package substrate under the action of the capillary phenomenon, and can be uniformly distributed in the plurality of first electrical connectors and the plurality of auxiliary structures Under the attraction of, it flows uniformly to the above gaps and fills the gap to improve the filling and distribution uniformity of the primer.
  • the auxiliary structure is a cubic block, and the volume of the auxiliary structure is larger than the volume of the first electrical connector.
  • the auxiliary structure has a large volume and does not require a high-precision manufacturing process to prepare it, so the production cost can be reduced.
  • the auxiliary structure is in contact with a portion of the lower surface of the semiconductor device where the first electrical connector is not provided. Therefore, the gap between the semiconductor device and the packaging substrate can be further reduced, and the primer material flows through the gap of the path to achieve the effect of enhancing the capillary phenomenon.
  • the above semiconductor package further includes a primer.
  • the primer can be filled between the packaging substrate and the semiconductor device through the above dispensing process.
  • the above primer can protect the first electrical connector arranged on the lower surface of the semiconductor device.
  • the semiconductor device is a bare chip.
  • the orthographic projection of the auxiliary structure on the active surface of the bare chip is located on the part of the bare chip active surface where the first electrical connector is not provided.
  • the semiconductor device may also be a chip entity obtained by packaging one or more bare chips.
  • the semiconductor device includes: a redistribution layer, a bare chip, and a plurality of second electrical connections.
  • the redistribution layer includes an upper surface and a lower surface disposed oppositely.
  • the bare chip is located on the upper surface of the redistribution layer.
  • a plurality of second electrical connectors are arranged on the active surface of the bare chip, and are used to electrically connect the bare chip and the redistribution layer.
  • the orthographic projection of the auxiliary structure on the lower surface of the redistribution layer is located on the portion of the lower surface of the redistribution layer where the first electrical connector is not provided.
  • Another aspect of the embodiments of the present application provides an electronic device including a printed circuit board, a third electrical connector, and any semiconductor package as described above.
  • the third electrical connector is located between the semiconductor package and the printed circuit board and is arranged on the semiconductor package; the third electrical connector is used to electrically connect the semiconductor package and the printed circuit board.
  • the above-mentioned electronic device has the same technical effect as the semiconductor package provided in the foregoing embodiment, and will not be repeated here.
  • FIG. 1 is a schematic structural diagram of a semiconductor package provided by some embodiments of this application.
  • FIG. 2 is a schematic diagram of a distribution structure of the first electrical connector on the lower surface of the semiconductor device in FIG. 1;
  • FIG. 3 is a schematic diagram of a distribution structure of the front projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
  • FIG. 4 is a schematic diagram of manufacturing the semiconductor package shown in FIG. 1;
  • FIG. 5 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application.
  • FIG. 6 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application.
  • FIG. 7 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application.
  • FIG. 8 is a schematic diagram of another distribution structure of the orthographic projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
  • FIG. 9 is a schematic diagram of another distribution structure of the orthographic projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
  • FIG. 10 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application.
  • FIG. 11 is a schematic diagram of another distribution structure of the front projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
  • FIG. 12 is a schematic diagram of a package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • FIG. 13 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • FIG. 14 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • 15 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • 16 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • 17 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • FIG. 18 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • 19 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application.
  • FIG. 20 is a schematic structural diagram of an electronic device provided by some embodiments of the present application.
  • first, second, etc. are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • “multiple” means two or more.
  • An embodiment of the present application provides a semiconductor package 01. As shown in FIG. 1, the package includes a packaging substrate 10, a semiconductor device 11, a plurality of first electrical connectors 21, a plurality of auxiliary structures 30, and a primer 12.
  • the package substrate 10 described above has an upper surface A1 and a lower surface A2 that are oppositely arranged.
  • the semiconductor device 11 is located on the upper surface A1 of the package substrate 11.
  • the package substrate 10 is used to support the semiconductor device 11.
  • the plurality of first electrical connectors 21 are arranged on the lower surface of the semiconductor device 11 (the surface close to the package substrate 10 ), and are used to electrically connect the semiconductor device 11 and the package substrate 10.
  • the plurality of first electrical connectors 21 are arranged in a relatively sparse area, and the capillary phenomenon is weak during the dispensing process. Therefore, the primer material cannot effectively fill the area.
  • the semiconductor package 01 provided by the embodiment of the present application is shown in FIG. 1.
  • the semiconductor package 01 also includes a plurality of auxiliary structures 30.
  • the plurality of auxiliary structures 30 are arranged on the upper surface A1 of the package substrate 10 and protrude from the upper surface A1 of the package substrate 10.
  • the orthographic projection of the above-mentioned auxiliary structure 30 on the lower surface of the semiconductor device 11 is located on the portion of the lower surface of the semiconductor device 11 where the first electrical connector 21 is not provided.
  • the plurality of protruding auxiliary structures 30 can compensate for the insufficient distribution of the first electrical connectors 21.
  • the primer material will penetrate into the gap between the semiconductor device 11 and the package substrate 10 in the direction of the arrow due to the capillary phenomenon Inside.
  • a plurality of first electrical connectors 21 and a plurality of auxiliary structures 30 distributed at different positions can enhance the above-mentioned capillary phenomenon, making the primer
  • the material can further enter the interior of the gap and flow to the location where the first electrical connection 21 and the auxiliary structure 30 are distributed.
  • the primer material can fill the gaps approximately or completely, thereby improving the filling property of the primer 12.
  • the primer material can fill the gap approximately or completely, so there is no need to use a pressure oven to press the primer material into the gap between the semiconductor device 11 and the package substrate 10 Inside. Therefore, the production cost can be saved.
  • the auxiliary structure 30 may be on the lower surface of the semiconductor device 21 without the first electrical The parts of the connector 21 are in contact. Therefore, in the gap between the semiconductor device 11 and the package substrate 10, the primer material flows through the gap of the path, and the effect of enhancing the capillary phenomenon is achieved.
  • the shape of the above-mentioned auxiliary structure 30 is the same as the first electrical connector 21.
  • the above-mentioned semiconductor chip 11 may be a bare chip (Die) 110.
  • the plurality of first electrical connectors 21 are solder bumps arranged on the active surface of the bare chip 110.
  • an under bump metallurgy (UBM) 210 is also provided on the active surface of the bare chip 110 corresponding to the solder bumps.
  • the under-bump metal layer 210 can cover the solder pads exposed on the active surface of the bare chip 110, thereby adhering to the solder bumps, and blocking the mutual diffusion of the metal materials constituting the solder bumps and the materials constituting the solder pads.
  • the active surface of the bare chip 110 is a surface provided with a circuit structure on the bare chip 110.
  • the orthographic projection of the auxiliary structure 30 on the active surface of the bare chip 110 is located on the active surface of the bare chip 110 where the first electrical connector 21 is not provided section.
  • the shape of the auxiliary structure 30 may be the same as the shape of the solder bump (ie, the first electrical connector 21 ).
  • the plurality of first electrical connectors 21 are a plurality of copper pillars arranged on the active surface of the bare chip 110.
  • the shape of the auxiliary structure 30 may be the same as the shape of the copper pillar, which is cylindrical.
  • the structure of the semiconductor chip 11 shown in FIG. 7 includes the bare chip 110, a redistribution layer (RDL) 120, and a second circuit Connector 22.
  • RDL redistribution layer
  • the redistribution layer 120 includes an upper surface B1 and a lower surface B2 that are oppositely arranged.
  • the bare chip 110 is located on the upper surface B1 of the redistribution layer 120 described above.
  • the redistribution layer 120 includes multiple dielectric layers 201 and multiple metal wiring layers.
  • Each metal wiring layer includes a plurality of metal wires 202.
  • a metal wiring layer and a dielectric layer 201 are alternately arranged.
  • the above multilayer metal wiring layer constitutes the metal wiring structure in the redistribution layer.
  • the dielectric layer 201 is also provided with via holes for electrically connecting two adjacent metal wiring layers 202.
  • the plurality of second electrical connectors 22 are arranged on the active surface of the bare chip 110 for electrically connecting the bare chip and the redistribution layer 120.
  • the second electrical connector 22 may be the solder bump or the copper pillar.
  • the first electrical connection 21 may be a solder ball.
  • a plurality of solder balls can be fabricated on the lower surface B2 of the redistribution layer 120 by using a ball grid array (BGA) ball planting process.
  • BGA ball grid array
  • the orthographic projection of the auxiliary structure 30 on the lower surface B2 of the redistribution layer 120 is located on the portion of the lower surface B2 of the redistribution layer 120 where the first electrical connector 21 is not provided.
  • the shape of the auxiliary structure 30 may be the same as the shape of the solder ball formed on the lower surface B2 of the redistribution layer 120.
  • the distance H1 between any two adjacent auxiliary structures 30 is different from the two adjacent first electrical connectors 21
  • the pitch H2 between the connecting members 21 is the same.
  • the plurality of first electrical connectors 21 and the plurality of auxiliary structures 30 may be approximately uniformly distributed in the gap between the semiconductor device 11 and the package substrate 10.
  • the primer material enters the gap between the semiconductor device 11 and the package substrate 10, and can be evenly distributed in the plurality of first electrical connectors 21 and the multiple Under the attraction of each auxiliary structure 30, it uniformly flows to each position of the above-mentioned gap, and fills the gap, thereby improving the filling property and distribution uniformity of the primer 12.
  • the auxiliary structure 30 is a cubic block, and the volume of the auxiliary structure 30 is larger than the volume of the first electrical connection 21.
  • the surface of the auxiliary structure 30 in contact with the semiconductor device 11 Can be flat.
  • the auxiliary structure 30 in this example has a larger volume and does not require high-precision fabrication Process to prepare it, so it can reduce production costs.
  • auxiliary structures 30 arranged on the upper surface A1 of the package substrate 10 may adopt the structure of Example 1.
  • it is spherical or cylindrical with the same shape as the first electrical connector 21.
  • another part of the auxiliary structure 30 may adopt the structure of Example 2, for example, a cube.
  • auxiliary structure 30 The materials constituting the auxiliary structure 30 will be described below.
  • the material constituting the auxiliary structure 30 may be a metal material or a resin material.
  • the material constituting the auxiliary structure 30 may be a material commonly used in manufacturing the package substrate 10.
  • the packaging substrate 10 may include at least one core board 20.
  • the core board 20 includes a dielectric layer 201 and metal layers on the upper and lower surfaces of the dielectric layer 201.
  • a plurality of metal wires 202 on the dielectric layer 201 can be formed.
  • a plurality of metal wires 202 located on the same dielectric layer 201 are called metal wiring layers.
  • graphic processing includes processes such as sticking a dry film, exposure, development, etching, film stripping and the like.
  • the package substrate 10 has a plurality of core plates 20, as shown in FIG. 12, the plurality of core plates 20 are stacked. There is an adhesive layer 30 between two adjacent core boards 20.
  • the outer surfaces of the uppermost and lowermost core boards 20 are covered with a solder mask 40, or green oil.
  • the solder resist layer 40 is used to protect the outermost metal wiring layer of the package substrate 10.
  • the material constituting the auxiliary structure 30 is a metal material
  • the material of the auxiliary structure 30 may be the same as the material of the metal wire 202 described above.
  • a hole needs to be formed in the solder resist layer 40 to expose the metal wires 202 below. Then, a spherical auxiliary structure 30 is made by a ball-balling process.
  • the auxiliary structure 30 is in contact with the upper surface A1 of the package substrate 10 and the metal wires 202 exposed through the openings in the solder resist layer 40, so that the auxiliary structure 30 can be fixed to the upper surface A1 of the package substrate 10.
  • the material constituting the auxiliary structure 30 is a resin material
  • the material of the auxiliary structure 30 may be the same as the material of the solder resist layer 40 described above.
  • a ball bumping process may be used to form a spherical auxiliary structure 30 as shown in FIG. 13 on the surface of the solder resist layer 40.
  • a printing process is used to form an auxiliary structure 30 in the shape of a cube as shown in FIG. 14 on the surface of the solder resist layer 40.
  • both the auxiliary structure 30 made of resin material and the auxiliary structure 30 made of metal material can be made.
  • the auxiliary structure 30 made of a metal material is in contact with the metal wire 202 exposed on the upper surface A1 of the package substrate 10.
  • the package substrate 10 includes multiple dielectric layers 201 and multiple metal wiring layers.
  • Each metal wiring layer includes multiple metal wires 202.
  • the above multilayer metal wiring layer constitutes the metal wiring structure in the package substrate 10.
  • the dielectric layer 201 is also provided with via holes for electrically connecting two adjacent metal wiring layers.
  • a metal wiring layer 202 and a dielectric layer 201 are alternately arranged.
  • the metal wiring layer 202 is formed on the dielectric layer 201 underneath through a plating process, or on a carrier board used to carry the package substrate 10.
  • the above-mentioned dielectric layer 201 is made of semi-cured resin material, and can be pressed on the substrate on which the metal wire 202 has been formed by a pressing process, so that the metal wire 202 under the dielectric layer 201 is embedded in the above-mentioned dielectric layer 201.
  • the outer surfaces of the uppermost and lowermost core boards 20 are covered with a solder mask 40, or green oil.
  • the solder resist layer 40 is used to protect the outermost metal wiring layer of the package substrate 10.
  • the material constituting the auxiliary structure 30 is a metal material
  • the same can be said that the material of the auxiliary structure 30 may be the same as the material of the metal wire 202 described above.
  • auxiliary structure 30 in order to enable the auxiliary structure 30 to be fixed to the upper surface A1 of the package substrate 10, a hole needs to be formed in the solder resist layer 40 to expose the metal wires 202 below. Then, a ball-shaped auxiliary structure 30 as shown in FIG. 16 is manufactured by a ball-balling process.
  • an electroplating process is used to form a cubic block-shaped auxiliary structure 30 as shown in FIG. 17 at the window opening position of the solder resist layer 40.
  • the auxiliary structure 30 is in contact with the upper surface A1 of the package substrate 10 and the metal wires 202 exposed through the openings in the solder resist layer 40, so that the auxiliary structure 30 can be fixed to the upper surface A1 of the package substrate 10.
  • the material constituting the auxiliary structure 30 when the material constituting the auxiliary structure 30 is a resin material, in order to briefly describe the manufacturing process, the material of the auxiliary structure 30 may be the same as the material of the solder resist layer 40 described above.
  • a ball bumping process may be used to form a spherical auxiliary structure 30 as shown in FIG. 18 on the surface of the solder resist layer 40.
  • a printing process is used to form a cubic auxiliary structure 30 as shown in FIG. 19 on the surface of the solder resist layer 40.
  • An embodiment of the present application provides an electronic device 03, as shown in FIG. 20, which includes a printed circuit board (PCB), a third electrical connector 23, and any of the semiconductor packages 01 as described above.
  • PCB printed circuit board
  • the third electrical connector 23 is located between the semiconductor package 01 and the PCB, and is arranged on the lower surface of the semiconductor package 01 (ie, the side surface close to the PCB).
  • the third electrical connector 23 is used to electrically connect the semiconductor package 01 and the PCB.
  • the above-mentioned electronic device has the same technical effect as the semiconductor package 01 provided in the foregoing embodiment, and will not be repeated here.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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Abstract

Provided are a semiconductor package and an electronic device, relating to the technical field of electronic packaging and used for solving the problem of the degradation of the underfill filling capacity due to the non-uniform distribution of bumps. The semiconductor package comprises a package substrate, a semiconductor device, a plurality of first electrical connectors and a plurality of auxiliary structures, wherein the package substrate has an upper surface and a lower surface arranged opposite one another; the semiconductor device is located on the upper surface of the package substrate; the plurality of first electrical connectors are distributed on a lower surface of the semiconductor device and are used for electrically connecting the semiconductor device to the package substrate; and the plurality of auxiliary structures are distributed on the upper surface of the package substrate and protrude from the upper surface of the package substrate. The orthographic projections of the auxiliary structures on the lower surface of the semiconductor device are located on a part of the lower surface of the semiconductor device where no first electrical connector is provided.

Description

一种半导体封装件、电子设备Semiconductor package and electronic equipment 技术领域Technical field
本申请涉及电子封装技术领域,尤其涉及一种半导体封装件、电子设备。The present application relates to the technical field of electronic packaging, in particular to a semiconductor package and electronic equipment.
背景技术Background technique
覆晶(flip chip)封装技术是,将芯片导电的凸块(bump)与基板电连接。芯片与基板之间具有间隙。为了对芯片和凸块进行保护性,采用点胶工艺会在芯片周围点胶。在芯片与基板之间的间隙(gap)与底胶(underfill)材料产生的毛细现象(capillary phenomenon)作用下,使得底胶材料渗入芯片和基板之间的间隙,以填充底胶的填充。然而,当上述凸块分布不均时,上述间隙中未分布凸块的位置的毛细现象会减弱,从而使得底胶无法有效对上述间隙进行填充。降低了递减的可靠性。Flip chip packaging technology is to electrically connect the bumps of the chip to the substrate. There is a gap between the chip and the substrate. In order to protect the chip and the bumps, the dispensing process will dispense glue around the chip. Under the action of the gap between the chip and the substrate and the capillary phenomenon produced by the underfill material, the primer material penetrates into the gap between the chip and the substrate to fill the underfill. However, when the bumps are unevenly distributed, the capillary phenomenon at the positions where the bumps are not distributed in the gap will be weakened, so that the primer cannot effectively fill the gap. Decreased reliability.
发明内容Summary of the invention
本发明实施例提供一种半导体封装件、电子设备,用于解决了由于凸块分布不均,导致底胶填充性下降的问题。The embodiments of the present invention provide a semiconductor package and an electronic device, which are used to solve the problem that the filling property of the primer decreases due to uneven distribution of the bumps.
为达到上述目的,本申请实施例采用如下技术方案:To achieve the above purpose, the embodiments of the present application adopt the following technical solutions:
本申请实施例的一方面,提供一种半导体封装件,包括封装基板、半导体器件、多个第一电连接件、多个辅助结构。其中,封装基板具有相对设置的上表面和下表面。半导体器件位于封装基板的上表面。多个第一电连接件排布于半导体器件的下表面,用于将半导体器件与封装基板电连接。多个辅助结构排布于封装基板的上表面,并从该封装基板的上表面凸出。辅助结构在半导体器件下表面上的正投影,位于半导体器件下表面上未设置第一电连接件的部分。这样一来,在半导体器件与封装基板之间的间隙中,可以通过多个辅助结构,对第一电连接件分布不足的现象进行弥补。由上述可知,当点胶装置在半导体器件周边进行点胶操作时,底胶材料因为毛细现象,会沿箭头方向渗入至半导体器件与封装基板之间的间隙内。基于上述半导体封装件的结构,半导体器件与封装基板之间的间隙内,分布在不同位置的多个第一电连接件和多个辅助结构能够增强上述毛细现象,使得底胶材料能够进一步进入间隙内部,并向分布有第一电连接件和辅助结构的位置流动。在此情况下,底胶材料能够将上述间隙近似或完全填充,从而提高了底胶的填充性。此外,在上述填充底胶的过程中,底胶材料能够将上述间隙近似或完全填充,因此无需采用压力烤箱将底胶材料压入半导体器件与封装基板之间的间隙内。从而能够节约制作成本。An aspect of an embodiment of the present application provides a semiconductor package, including a package substrate, a semiconductor device, a plurality of first electrical connectors, and a plurality of auxiliary structures. Wherein, the packaging substrate has an upper surface and a lower surface that are oppositely arranged. The semiconductor device is located on the upper surface of the package substrate. A plurality of first electrical connectors are arranged on the lower surface of the semiconductor device, and are used to electrically connect the semiconductor device and the packaging substrate. A plurality of auxiliary structures are arranged on the upper surface of the packaging substrate and protrude from the upper surface of the packaging substrate. The orthographic projection of the auxiliary structure on the lower surface of the semiconductor device is located on the portion of the lower surface of the semiconductor device where the first electrical connector is not provided. In this way, in the gap between the semiconductor device and the package substrate, a plurality of auxiliary structures can be used to compensate for the insufficient distribution of the first electrical connector. As can be seen from the above, when the dispensing device performs the dispensing operation around the semiconductor device, the primer material will penetrate into the gap between the semiconductor device and the packaging substrate in the direction of the arrow due to the capillary phenomenon. Based on the structure of the above semiconductor package, a plurality of first electrical connectors and a plurality of auxiliary structures distributed in different positions in the gap between the semiconductor device and the package substrate can enhance the above capillary phenomenon, so that the primer material can further enter the gap Inside, and to the location where the first electrical connection and the auxiliary structure are distributed. In this case, the primer material can fill the gaps approximately or completely, thereby improving the filling property of the primer. In addition, in the process of filling the primer, the primer material can fill the gap approximately or completely, so there is no need to use a pressure oven to press the primer material into the gap between the semiconductor device and the packaging substrate. Therefore, the production cost can be saved.
可选的,封装基板包括至少一层金属布线层,金属布线层包括多条金属导线。构成辅助结构的材料为金属材料。辅助结构与封装基板上表面露出的金属导线相接触。通过将金属材料构成的辅助结构与封装基板上表面露出的金属导线相接触,达到固定辅助结构的目的。Optionally, the packaging substrate includes at least one metal wiring layer, and the metal wiring layer includes multiple metal wires. The material constituting the auxiliary structure is a metallic material. The auxiliary structure is in contact with the metal wires exposed on the upper surface of the packaging substrate. By contacting the auxiliary structure made of metal material with the metal wires exposed on the upper surface of the packaging substrate, the purpose of fixing the auxiliary structure is achieved.
可选的,辅助结构的材料与上述金属导线的材料相同。这样一来,构成辅助结构的材料可以选通制作封装基板过程中,常用的材料,从而能够简化制作工艺。Optionally, the material of the auxiliary structure is the same as the material of the metal wire. In this way, the materials constituting the auxiliary structure can be selected from the materials commonly used in the process of manufacturing the package substrate, thereby simplifying the manufacturing process.
或者,可选的,封装基板包括至少一层金属布线层,以及覆盖最外侧的金属布线层的阻焊层。构成辅助结构的材料,与阻焊层的材料相同。这样一来,构成辅助结构的材料可以选通制作封装基板过程中,常用的材料,从而能够简化制作工艺。Alternatively, optionally, the packaging substrate includes at least one metal wiring layer, and a solder resist layer covering the outermost metal wiring layer. The material constituting the auxiliary structure is the same as the material of the solder resist layer. In this way, the materials constituting the auxiliary structure can be selected from the materials commonly used in the process of manufacturing the package substrate, thereby simplifying the manufacturing process.
可选的,第一电连接件包括焊锡凸块、焊球或者铜柱。Optionally, the first electrical connector includes solder bumps, solder balls, or copper pillars.
可选的,辅助结构的形状以及外形尺寸与第一电连接件相同。这样一来,可以进一步减小半导体器件与封装基板之间的间隙中,底胶材料流经路径的缝隙,达到增强上述毛细现象,促进底胶材料在半导体器件与封装基板之间的间隙中的流动的目的。Optionally, the auxiliary structure has the same shape and external dimensions as the first electrical connector. In this way, the gap between the semiconductor device and the package substrate can be further reduced, the primer material flows through the gap of the path, to achieve the above capillary phenomenon, and promote the primer material in the gap between the semiconductor device and the package substrate The purpose of the flow.
可选的,任意相邻两个辅助结构之间的间距,与多个第一电连接件中,相邻两个第一电连接件之间的间距相同。在此情况下,上述多个第一电连接件和多个辅助结构,可以近似均匀分布于半导体器件与封装基板之间的间隙中。这样一来,在点胶工艺中,底胶材料在毛细现象的作用下,进入到半导体器件与封装基板之间的间隙后,能够在均匀分布的多个第一电连接件和多个辅助结构的吸引下,均匀的流动至上述间隙的各个位置,并对该间隙进行填充,提高底胶的填充性和分布均匀性。Optionally, the spacing between any two adjacent auxiliary structures is the same as the spacing between two adjacent first electrical connectors among the plurality of first electrical connectors. In this case, the plurality of first electrical connectors and the plurality of auxiliary structures may be approximately uniformly distributed in the gap between the semiconductor device and the package substrate. In this way, in the dispensing process, the primer material enters the gap between the semiconductor device and the package substrate under the action of the capillary phenomenon, and can be uniformly distributed in the plurality of first electrical connectors and the plurality of auxiliary structures Under the attraction of, it flows uniformly to the above gaps and fills the gap to improve the filling and distribution uniformity of the primer.
可选的,辅助结构为立方块,且辅助结构的体积大于第一电连接件的体积。这样一来,辅助结构的体积较大,无需精度较高的制作工艺对其进行制备,因此能够降低生产成本。Optionally, the auxiliary structure is a cubic block, and the volume of the auxiliary structure is larger than the volume of the first electrical connector. In this way, the auxiliary structure has a large volume and does not require a high-precision manufacturing process to prepare it, so the production cost can be reduced.
可选的,辅助结构与半导体器件下表面上,未设置第一电连接件的部分相接触。从而可以进一步减小半导体器件与封装基板之间的间隙中,底胶材料流经路径的缝隙,达到增强毛细现象的效果。Optionally, the auxiliary structure is in contact with a portion of the lower surface of the semiconductor device where the first electrical connector is not provided. Therefore, the gap between the semiconductor device and the packaging substrate can be further reduced, and the primer material flows through the gap of the path to achieve the effect of enhancing the capillary phenomenon.
可选的,上述半导体封装件还包括底胶。该底胶可以通过上述点胶工艺,填充于封装基板与半导体器件之间。上述底胶可以对排布于半导体器件下表面的第一电连接件进行保护。Optionally, the above semiconductor package further includes a primer. The primer can be filled between the packaging substrate and the semiconductor device through the above dispensing process. The above primer can protect the first electrical connector arranged on the lower surface of the semiconductor device.
可选的,半导体器件为裸芯片。辅助结构在裸芯片的有源面上的正投影,位于裸芯片有源面上未设置第一电连接件的部分。在其他可选的实施例中,所述半导体器件也可以为将一个或多个裸芯片封装得到的芯片实体。Optionally, the semiconductor device is a bare chip. The orthographic projection of the auxiliary structure on the active surface of the bare chip is located on the part of the bare chip active surface where the first electrical connector is not provided. In other optional embodiments, the semiconductor device may also be a chip entity obtained by packaging one or more bare chips.
或者,可选的,半导体器件包括:重布线层、裸芯片以及多个第二电连接件。该重布线层包括相对设置的上表面和下表面。裸芯片位于重布线层的上表面。多个第二电连接件排布于裸芯片的有源面上,用于将裸芯片与重布线层电连接。辅助结构在重布线层的下表面上的正投影,位于重布线层下表面上未设置第一电连接件的部分。Or, optionally, the semiconductor device includes: a redistribution layer, a bare chip, and a plurality of second electrical connections. The redistribution layer includes an upper surface and a lower surface disposed oppositely. The bare chip is located on the upper surface of the redistribution layer. A plurality of second electrical connectors are arranged on the active surface of the bare chip, and are used to electrically connect the bare chip and the redistribution layer. The orthographic projection of the auxiliary structure on the lower surface of the redistribution layer is located on the portion of the lower surface of the redistribution layer where the first electrical connector is not provided.
本申请实施例的另一方面,提供一种电子设备包括印刷电路板、第三电连接件,以及如上所述的任意一种半导体封装件。第三电连接件位于半导体封装件和印刷电路板之间,且排布于半导体封装件上;第三电连接件用于将半导体封装件与印刷电路板电连接。上述电子设备具有与前述实施例提供的半导体封装件相同的技术效果,此处不再赘述。Another aspect of the embodiments of the present application provides an electronic device including a printed circuit board, a third electrical connector, and any semiconductor package as described above. The third electrical connector is located between the semiconductor package and the printed circuit board and is arranged on the semiconductor package; the third electrical connector is used to electrically connect the semiconductor package and the printed circuit board. The above-mentioned electronic device has the same technical effect as the semiconductor package provided in the foregoing embodiment, and will not be repeated here.
附图说明BRIEF DESCRIPTION
图1为本申请的一些实施例提供的一种半导体封装件的结构示意图;1 is a schematic structural diagram of a semiconductor package provided by some embodiments of this application;
图2为图1中半导体器件下表面上第一电连接件的一种分布结构示意图;2 is a schematic diagram of a distribution structure of the first electrical connector on the lower surface of the semiconductor device in FIG. 1;
图3为图1中半导体器件下表面上第一电连接件和辅助结构正投影的一种分布结构示意图;FIG. 3 is a schematic diagram of a distribution structure of the front projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
图4为制作如图1所示的半导体封装件的一种示意图;4 is a schematic diagram of manufacturing the semiconductor package shown in FIG. 1;
图5为本申请的一些实施例提供的另一种半导体封装件的结构示意图;5 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application;
图6为本申请的一些实施例提供的另一种半导体封装件的结构示意图;6 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application;
图7为本申请的一些实施例提供的另一种半导体封装件的结构示意图;7 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application;
图8为图1中半导体器件下表面上第一电连接件和辅助结构正投影的另一种分布结构示意图;8 is a schematic diagram of another distribution structure of the orthographic projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
图9为图1中半导体器件下表面上第一电连接件和辅助结构正投影的另一种分布结构示意图;9 is a schematic diagram of another distribution structure of the orthographic projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
图10为本申请的一些实施例提供的另一种半导体封装件的结构示意图;10 is a schematic structural diagram of another semiconductor package provided by some embodiments of the present application;
图11为图1中半导体器件下表面上第一电连接件和辅助结构正投影的另一种分布结构示意图;11 is a schematic diagram of another distribution structure of the front projection of the first electrical connector and the auxiliary structure on the lower surface of the semiconductor device in FIG. 1;
图12为本申请的一些实施例提供的一种分布有辅助结构的封装基板的示意图;12 is a schematic diagram of a package substrate with auxiliary structures distributed according to some embodiments of the present application;
图13为本申请的一些实施例提供的另一种分布有辅助结构的封装基板的示意图;13 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application;
图14为本申请的一些实施例提供的另一种分布有辅助结构的封装基板的示意图;14 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application;
图15为本申请的一些实施例提供的另一种分布有辅助结构的封装基板的示意图;15 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application;
图16为本申请的一些实施例提供的另一种分布有辅助结构的封装基板的示意图;16 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application;
图17为本申请的一些实施例提供的另一种分布有辅助结构的封装基板的示意图;17 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application;
图18为本申请的一些实施例提供的另一种分布有辅助结构的封装基板的示意图;18 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application;
图19为本申请的一些实施例提供的另一种分布有辅助结构的封装基板的示意图;19 is a schematic diagram of another package substrate with auxiliary structures distributed according to some embodiments of the present application;
图20为本申请的一些实施例提供的一种电子设备的结构示意图。FIG. 20 is a schematic structural diagram of an electronic device provided by some embodiments of the present application.
附图标记:Reference mark:
01-半导体封装件;02-点胶装置;03-电子设备;10-封装基板;11-半导体器件;110-裸芯片;120-重布线层;201-介电层;202-金属导线;12-底胶;20-芯板;21-第一电连接件;210-凸点下金属层;22-第二电连接件;23-第三电连接件;30-辅助结构;40-焊阻层。01- semiconductor package; 02- dispensing device; 03- electronic equipment; 10- package substrate; 11- semiconductor device; 110- bare chip; 120- redistribution layer; 201- dielectric layer; 202- metal wire; 12 -Primer; 20-core board; 21-first electrical connector; 210-under bump metal layer; 22-second electrical connector; 23-third electrical connector; 30- auxiliary structure; 40- solder resistance Floor.
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。The technical solutions in the embodiments of the present invention will be described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all the embodiments.
本文中,术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,除非另有说明,“多个”的含义是两个或两个以上。Herein, the terms "first", "second", etc. are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise stated, "multiple" means two or more.
此外,本文中,“上”、“下”等方位术语是相对于附图中的显示面板示意置放的方位来定义的,应当理解到,这些方向性术语是相对的概念,它们用于相对于的描述和澄清,其可以根据显示面板所放置的方位的变化而相应地发生变化。In addition, in this article, directional terms such as “upper” and “lower” are defined relative to the orientation in which the display panel in the drawing is schematically placed. It should be understood that these directional terms are relative concepts and they are used for relative For the description and clarification of Yu, it can change accordingly according to the change of the orientation of the display panel.
本申请实施例提供一种半导体封装件01,如图1所示,包括:封装基板10、半导体器件11、多个第一电连接件21、多个辅助结构30以及底胶12。An embodiment of the present application provides a semiconductor package 01. As shown in FIG. 1, the package includes a packaging substrate 10, a semiconductor device 11, a plurality of first electrical connectors 21, a plurality of auxiliary structures 30, and a primer 12.
上述封装基板10具有相对设置的上表面A1和下表面A2。半导体器件11位于封装基板11的上表面A1。该封装基板10用于对半导体器件11进行支撑。The package substrate 10 described above has an upper surface A1 and a lower surface A2 that are oppositely arranged. The semiconductor device 11 is located on the upper surface A1 of the package substrate 11. The package substrate 10 is used to support the semiconductor device 11.
此外,上述多个第一电连接件21,排布于半导体器件11的下表面(靠近封装基板10的表面),用于将半导体器件11与封装基板10电连接。In addition, the plurality of first electrical connectors 21 are arranged on the lower surface of the semiconductor device 11 (the surface close to the package substrate 10 ), and are used to electrically connect the semiconductor device 11 and the package substrate 10.
在此情况下,受到半导体器件11中电路设计布局的影响,如图2所示,在半导体器件11的下表面,多个第一电连接件21在有些区域分布较为密集,而在有些区域分布较为稀疏。In this case, due to the influence of the circuit design layout in the semiconductor device 11, as shown in FIG. 2, on the lower surface of the semiconductor device 11, a plurality of first electrical connectors 21 are densely distributed in some areas and distributed in some areas Relatively sparse.
这样一来,在半导体器件11与封装基板10之间的间隙中,上述多个第一电连接件21排布较为稀疏的区域,在点胶过程中,毛细现象较弱。从而使得底胶材料无法有效将该区域进行填充。In this way, in the gap between the semiconductor device 11 and the package substrate 10, the plurality of first electrical connectors 21 are arranged in a relatively sparse area, and the capillary phenomenon is weak during the dispensing process. Therefore, the primer material cannot effectively fill the area.
为了解决半导体器件11与封装基板10之间的间隙中,第一电连接件21分布较稀疏位置处,底胶12填充不足的问题。本申请实施例提供的半导体封装件01,如图1所示。该半导体封装件01还包括多个辅助结构30。In order to solve the problem of the gap between the semiconductor device 11 and the package substrate 10, the first electrical connectors 21 are distributed at sparse locations, and the underfill 12 is insufficiently filled. The semiconductor package 01 provided by the embodiment of the present application is shown in FIG. 1. The semiconductor package 01 also includes a plurality of auxiliary structures 30.
上述多个辅助结构30排布于封装基板10的上表面A1,并从封装基板10的上表面A1凸出。The plurality of auxiliary structures 30 are arranged on the upper surface A1 of the package substrate 10 and protrude from the upper surface A1 of the package substrate 10.
如图3所示,上述辅助结构30在半导体器件11下表面上的正投影,位于半导体器件11下表面上未设置第一电连接件21的部分。As shown in FIG. 3, the orthographic projection of the above-mentioned auxiliary structure 30 on the lower surface of the semiconductor device 11 is located on the portion of the lower surface of the semiconductor device 11 where the first electrical connector 21 is not provided.
这样一来,在半导体器件11与封装基板10之间的间隙中,可以通过多个凸出的辅助结构30,对第一电连接件21分布不足的现象进行弥补。In this way, in the gap between the semiconductor device 11 and the package substrate 10, the plurality of protruding auxiliary structures 30 can compensate for the insufficient distribution of the first electrical connectors 21.
由上述可知,如图4所示,当点胶装置02在半导体器件11周边进行点胶操作时,底胶材料因为毛细现象,会沿箭头方向渗入至半导体器件11与封装基板10之间的间隙内。As can be seen from the above, as shown in FIG. 4, when the dispensing device 02 performs the dispensing operation around the semiconductor device 11, the primer material will penetrate into the gap between the semiconductor device 11 and the package substrate 10 in the direction of the arrow due to the capillary phenomenon Inside.
基于上述半导体封装件01的结构,半导体器件11与封装基板10之间的间隙内,分布在不同位置的多个第一电连接件21和多个辅助结构30能够增强上述毛细现象,使得底胶材料能够进一步进入间隙内部,并向分布有第一电连接件21和辅助结构30的位置流动。在此情况下,底胶材料能够将上述间隙近似或完全填充,从而提高了底胶12的填充性。Based on the structure of the semiconductor package 01 described above, in the gap between the semiconductor device 11 and the package substrate 10, a plurality of first electrical connectors 21 and a plurality of auxiliary structures 30 distributed at different positions can enhance the above-mentioned capillary phenomenon, making the primer The material can further enter the interior of the gap and flow to the location where the first electrical connection 21 and the auxiliary structure 30 are distributed. In this case, the primer material can fill the gaps approximately or completely, thereby improving the filling property of the primer 12.
此外,在上述填充底胶12的过程中,底胶材料能够将上述间隙近似或完全填充,因此无需采用压力烤箱(pressure oven)将底胶材料压入半导体器件11与封装基板10之间的间隙内。从而能够节约制作成本。In addition, in the process of filling the primer 12, the primer material can fill the gap approximately or completely, so there is no need to use a pressure oven to press the primer material into the gap between the semiconductor device 11 and the package substrate 10 Inside. Therefore, the production cost can be saved.
在此基础上,为了进一步增强上述毛细现象,促进底胶材料在半导体器件11与封装基板10之间的间隙中的流动,上述辅助结构30可以与半导体器件21下表面上,未设置第一电连接件21的部分相接触。从而可以进一步减小半导体器件11与封装基板10之间的间隙中,底胶材料流经路径的缝隙,达到增强毛细现象的效果。On this basis, in order to further enhance the above capillary phenomenon and promote the flow of the primer material in the gap between the semiconductor device 11 and the package substrate 10, the auxiliary structure 30 may be on the lower surface of the semiconductor device 21 without the first electrical The parts of the connector 21 are in contact. Therefore, in the gap between the semiconductor device 11 and the package substrate 10, the primer material flows through the gap of the path, and the effect of enhancing the capillary phenomenon is achieved.
以下对辅助结构30的设置方式进行举例说明。The arrangement of the auxiliary structure 30 will be exemplified below.
示例一Example one
本示例中,上述辅助结构30的形状与第一电连接件21相同。In this example, the shape of the above-mentioned auxiliary structure 30 is the same as the first electrical connector 21.
例如,如图5所示,上述半导体芯片11可以为裸芯片(Die)110。For example, as shown in FIG. 5, the above-mentioned semiconductor chip 11 may be a bare chip (Die) 110.
此外,上述多个第一电连接件21为,排布于裸芯片110有源面上的多个焊锡凸块(solder bump)。In addition, the plurality of first electrical connectors 21 are solder bumps arranged on the active surface of the bare chip 110.
在此情况下,上述裸芯片110的有源面上,在对应焊锡凸块的位置,还设置有凸 点下金属层(Under Bump Metallization,UBM)210。In this case, an under bump metallurgy (UBM) 210 is also provided on the active surface of the bare chip 110 corresponding to the solder bumps.
该凸点下金属层210能够覆盖裸芯片110有源面上裸露的焊垫,从而对上述焊锡凸块进行粘附,并阻挡构成焊锡凸块的金属材料与构成上述焊垫的材料互相扩散。The under-bump metal layer 210 can cover the solder pads exposed on the active surface of the bare chip 110, thereby adhering to the solder bumps, and blocking the mutual diffusion of the metal materials constituting the solder bumps and the materials constituting the solder pads.
需要说明的是,上述裸芯片110的有源面为,裸芯片110上设置有电路结构的表面。It should be noted that the active surface of the bare chip 110 is a surface provided with a circuit structure on the bare chip 110.
在此情况下,对于图5所示的结构而言,辅助结构30在裸芯片110的有源面上的正投影,位于裸芯片110有源面上未设置所述第一电连接件21的部分。In this case, for the structure shown in FIG. 5, the orthographic projection of the auxiliary structure 30 on the active surface of the bare chip 110 is located on the active surface of the bare chip 110 where the first electrical connector 21 is not provided section.
此时,如图5所示,上述辅助结构30的形状可以与该锡焊凸块(即第一电连接件21)的形状相同。At this time, as shown in FIG. 5, the shape of the auxiliary structure 30 may be the same as the shape of the solder bump (ie, the first electrical connector 21 ).
或者,又例如,如图6所示,在上述半导体芯片11为裸芯片110的情况下,上述多个第一电连接件21为排布于裸芯片110有源面上的多个铜柱。Or, for another example, as shown in FIG. 6, when the semiconductor chip 11 is a bare chip 110, the plurality of first electrical connectors 21 are a plurality of copper pillars arranged on the active surface of the bare chip 110.
在此情况下,上述辅助结构30的形状可以与该铜柱的形状相同,为圆柱形。In this case, the shape of the auxiliary structure 30 may be the same as the shape of the copper pillar, which is cylindrical.
或者,又例如在本申请的另一些实施例中,上述半导体芯片11的结构,如图7所示,上述半导体芯片11包括裸芯片110、重布线层(redistribution layer,RDL)120以及第二电连接件22。Or, for example, in some other embodiments of the present application, the structure of the semiconductor chip 11 shown in FIG. 7 includes the bare chip 110, a redistribution layer (RDL) 120, and a second circuit Connector 22.
其中,重布线层120包括相对设置的上表面B1和下表面B2。裸芯片110位于上述重布线层120的上表面B1。Among them, the redistribution layer 120 includes an upper surface B1 and a lower surface B2 that are oppositely arranged. The bare chip 110 is located on the upper surface B1 of the redistribution layer 120 described above.
需要说明的是,重布线层120包括多层介电层201以及多层金属布线层。每层金属布线层包括多条金属导线202。It should be noted that the redistribution layer 120 includes multiple dielectric layers 201 and multiple metal wiring layers. Each metal wiring layer includes a plurality of metal wires 202.
一层金属布线层与一层介电层201交替设置。上述多层金属布线层构成该重布线层中的金属线路结构。此外,上述介电层201上还设置有用于将相邻两层金属布线层202电连接的过孔。A metal wiring layer and a dielectric layer 201 are alternately arranged. The above multilayer metal wiring layer constitutes the metal wiring structure in the redistribution layer. In addition, the dielectric layer 201 is also provided with via holes for electrically connecting two adjacent metal wiring layers 202.
在此基础上,上述多个第二电连接件22,排布于裸芯片110的有源面上,用于将上述裸芯片与重布线层120电连接。On this basis, the plurality of second electrical connectors 22 are arranged on the active surface of the bare chip 110 for electrically connecting the bare chip and the redistribution layer 120.
上述第二电连接件22可以为上述焊锡凸块,或者铜柱。The second electrical connector 22 may be the solder bump or the copper pillar.
在此情况下,该第一电连接件21可以为焊球(solder ball)。多个焊球可以采用焊球阵列(ball grid array,BGA)植球工艺制作于重布线层120的下表面B2。In this case, the first electrical connection 21 may be a solder ball. A plurality of solder balls can be fabricated on the lower surface B2 of the redistribution layer 120 by using a ball grid array (BGA) ball planting process.
基于此,辅助结构30在重布线层120的下表面B2上的正投影,位于重布线层120下表面B2上未设置第一电连接件21的部分。Based on this, the orthographic projection of the auxiliary structure 30 on the lower surface B2 of the redistribution layer 120 is located on the portion of the lower surface B2 of the redistribution layer 120 where the first electrical connector 21 is not provided.
此时,上述辅助结构30的形状,可以与制作于重布线层120的下表面B2上的焊球的形状相同。At this time, the shape of the auxiliary structure 30 may be the same as the shape of the solder ball formed on the lower surface B2 of the redistribution layer 120.
在此基础上,对于图5、图6以及图7所示的任意一种辅助结构30而言,在该辅助结构30的形状与第一电连接件21的形状相同的情况下,上述辅助结构30和第一电连接21的外形尺寸也可以相同。这样一来,可以进一步减小半导体器件11与封装基板10之间的间隙中,底胶材料流经路径的缝隙,达到增强上述毛细现象,促进底胶材料在半导体器件11与封装基板10之间的间隙中的流动的目的。On this basis, for any of the auxiliary structures 30 shown in FIGS. 5, 6, and 7, if the shape of the auxiliary structure 30 is the same as the shape of the first electrical connector 21, the above auxiliary structure The external dimensions of 30 and the first electrical connection 21 may also be the same. In this way, the gap between the semiconductor device 11 and the package substrate 10 can be further reduced, and the gap of the primer material flowing through the path can enhance the capillary phenomenon and promote the primer material between the semiconductor device 11 and the package substrate 10 The purpose of the flow in the gap.
此外,在本申请的一些实施例中,如图8所示,任意相邻两个辅助结构30之间的间距H1,与上述多个第一电连接件21中,相邻两个第一电连接件21之间的间距H2相同。In addition, in some embodiments of the present application, as shown in FIG. 8, the distance H1 between any two adjacent auxiliary structures 30 is different from the two adjacent first electrical connectors 21 The pitch H2 between the connecting members 21 is the same.
在此情况下,上述多个第一电连接件21和多个辅助结构30,可以近似均匀分布于半导体器件11与封装基板10之间的间隙中。In this case, the plurality of first electrical connectors 21 and the plurality of auxiliary structures 30 may be approximately uniformly distributed in the gap between the semiconductor device 11 and the package substrate 10.
这样一来,在点胶工艺中,底胶材料在毛细现象的作用下,进入到半导体器件11与封装基板10之间的间隙后,能够在均匀分布的多个第一电连接件21和多个辅助结构30的吸引下,均匀的流动至上述间隙的各个位置,并对该间隙进行填充,提高底胶12的填充性和分布均匀性。In this way, in the dispensing process, under the effect of the capillary phenomenon, the primer material enters the gap between the semiconductor device 11 and the package substrate 10, and can be evenly distributed in the plurality of first electrical connectors 21 and the multiple Under the attraction of each auxiliary structure 30, it uniformly flows to each position of the above-mentioned gap, and fills the gap, thereby improving the filling property and distribution uniformity of the primer 12.
示例二Example 2
本示例中,如图9所示,上述辅助结构30为立方块,且辅助结构30的体积大于第一电连接件21的体积。In this example, as shown in FIG. 9, the auxiliary structure 30 is a cubic block, and the volume of the auxiliary structure 30 is larger than the volume of the first electrical connection 21.
在此基础上,如图10所示,在辅助结构30与半导体器件11下表面上,未设置第一电连接件21的部分相接触的情况下,辅助结构30与半导体器件11相接触的表面可以为平面。On this basis, as shown in FIG. 10, in the case where the auxiliary structure 30 is in contact with the lower surface of the semiconductor device 11 where no first electrical connector 21 is provided, the surface of the auxiliary structure 30 in contact with the semiconductor device 11 Can be flat.
这样一来,相对于示例一中,提供的辅助结构30与第一电连接件21的形状和外形尺寸相同的方案而言,本示例中辅助结构30的体积较大,无需精度较高的制作工艺对其进行制备,因此能够降低生产成本。In this way, compared to the solution in which the shape and the outer dimensions of the auxiliary structure 30 and the first electrical connector 21 are the same in Example 1, the auxiliary structure 30 in this example has a larger volume and does not require high-precision fabrication Process to prepare it, so it can reduce production costs.
需要说明的是,在本申请的另一些示例中,如图11所示,排布于封装基板10的上表面A1中的多个辅助结构30中,一部分辅助结构30可以采用示例一的结构,例如,为与第一电连接件21形状相同的球形或圆柱形。此外,另一部分辅助结构30的可以采用示例二的结构,例如为立方块。It should be noted that, in some other examples of the present application, as shown in FIG. 11, a plurality of auxiliary structures 30 arranged on the upper surface A1 of the package substrate 10, and some auxiliary structures 30 may adopt the structure of Example 1. For example, it is spherical or cylindrical with the same shape as the first electrical connector 21. In addition, another part of the auxiliary structure 30 may adopt the structure of Example 2, for example, a cube.
以下对构成辅助结构30的材料进行说明。The materials constituting the auxiliary structure 30 will be described below.
在本申请实施例中,构成辅助结构30的材料可以为金属材料,也可以为树脂材料。In the embodiment of the present application, the material constituting the auxiliary structure 30 may be a metal material or a resin material.
基于此,为了简化制作容易,构成辅助结构30的材料可以采用制作封装基板10中常用的材料。Based on this, in order to simplify manufacturing, the material constituting the auxiliary structure 30 may be a material commonly used in manufacturing the package substrate 10.
例如,在本公开的一些实施例中,如图12、图13、图14以及图15所示,封装基板10可以包括至少一个芯板20。For example, in some embodiments of the present disclosure, as shown in FIGS. 12, 13, 14, and 15, the packaging substrate 10 may include at least one core board 20.
该芯板20包括介质层201,以及位于该介质层201上、下表面的金属层。The core board 20 includes a dielectric layer 201 and metal layers on the upper and lower surfaces of the dielectric layer 201.
对该金属层进行图形化处理,可以形成位于该介质层201上的多条金属导线202。本申请实施例中,将位于同一介质层201上的多条金属导线202称为金属布线层。By patterning the metal layer, a plurality of metal wires 202 on the dielectric layer 201 can be formed. In the embodiment of the present application, a plurality of metal wires 202 located on the same dielectric layer 201 are called metal wiring layers.
需要说明的是,上述图形化处理包括贴干膜、曝光、显影、刻蚀、剥膜等工艺。It should be noted that the above-mentioned graphic processing includes processes such as sticking a dry film, exposure, development, etching, film stripping and the like.
当封装基板10具有多个芯板20时,如图12所示,上述多个芯板20堆叠设置。相邻两个芯板20之间具有粘结层30。When the package substrate 10 has a plurality of core plates 20, as shown in FIG. 12, the plurality of core plates 20 are stacked. There is an adhesive layer 30 between two adjacent core boards 20.
此外,封装基板10中,最上方和最下方的芯板20的外表面覆盖有阻焊层(solder mask)40,或称为绿油。上述阻焊层40用于对封装基板10最外侧的金属布线层进行保护。In addition, in the package substrate 10, the outer surfaces of the uppermost and lowermost core boards 20 are covered with a solder mask 40, or green oil. The solder resist layer 40 is used to protect the outermost metal wiring layer of the package substrate 10.
在此情况下,当构成辅助结构30的材料为金属材料时,为了简化制作工艺,辅助结构30的材料可以与上述金属导线202的材料相同。In this case, when the material constituting the auxiliary structure 30 is a metal material, in order to simplify the manufacturing process, the material of the auxiliary structure 30 may be the same as the material of the metal wire 202 described above.
基于此,为了使得辅助结构30能够固定于封装基板10的上表面A1,需要在阻焊层40上开孔,以露出下方的金属导线202。然后,通过植球工艺制作球形的辅助结构30。Based on this, in order to enable the auxiliary structure 30 to be fixed to the upper surface A1 of the package substrate 10, a hole needs to be formed in the solder resist layer 40 to expose the metal wires 202 below. Then, a spherical auxiliary structure 30 is made by a ball-balling process.
上述辅助结构30与封装基板10上表面A1,通过阻焊层40上的开孔所露出的金属导线202相接触,从而使得辅助结构30能够固定于封装基板10的上表面A1。The auxiliary structure 30 is in contact with the upper surface A1 of the package substrate 10 and the metal wires 202 exposed through the openings in the solder resist layer 40, so that the auxiliary structure 30 can be fixed to the upper surface A1 of the package substrate 10.
或者,构成辅助结构30的材料为树脂材料时,为了简述制作工艺,辅助结构30的材料可以与上述阻焊层40的材料相同。Alternatively, when the material constituting the auxiliary structure 30 is a resin material, in order to briefly describe the manufacturing process, the material of the auxiliary structure 30 may be the same as the material of the solder resist layer 40 described above.
基于此,可以采用植球工艺,在阻焊层40的表面,形成如图13所示的球形的辅助结构30。Based on this, a ball bumping process may be used to form a spherical auxiliary structure 30 as shown in FIG. 13 on the surface of the solder resist layer 40.
或者采用印刷工艺,在阻焊层40的表面,形成如图14所示的立方块形状的辅助结构30。Alternatively, a printing process is used to form an auxiliary structure 30 in the shape of a cube as shown in FIG. 14 on the surface of the solder resist layer 40.
此外,在本申请的一些实施例中,如图15所示,在封装基板10上表面A1上,即可以制作树脂材料构成的辅助结构30,又可以制作金属材料构成辅助结构30。其中,由上述可知,金属材料构成辅助结构30与封装基板10上表面A1露出的金属导线202相接触。In addition, in some embodiments of the present application, as shown in FIG. 15, on the upper surface A1 of the package substrate 10, both the auxiliary structure 30 made of resin material and the auxiliary structure 30 made of metal material can be made. As can be seen from the above, the auxiliary structure 30 made of a metal material is in contact with the metal wire 202 exposed on the upper surface A1 of the package substrate 10.
或者,在本申请的另一些实施例中,如图16、图17、图18以及图19所示,封装基板10包括多层介电层201以及多层金属布线层。Alternatively, in some other embodiments of the present application, as shown in FIGS. 16, 17, 18 and 19, the package substrate 10 includes multiple dielectric layers 201 and multiple metal wiring layers.
其中,每一层金属布线层包括多条金属导线202。上述多层金属布线层构成该封装基板10中的金属线路结构。Each metal wiring layer includes multiple metal wires 202. The above multilayer metal wiring layer constitutes the metal wiring structure in the package substrate 10.
此外,上述介电层201上还设置有用于将相邻两层金属布线层电连接的过孔。In addition, the dielectric layer 201 is also provided with via holes for electrically connecting two adjacent metal wiring layers.
如图16所示,一层金属布线层202与一层介电层201交替设置。As shown in FIG. 16, a metal wiring layer 202 and a dielectric layer 201 are alternately arranged.
在制作图16所示的封装基板10中,金属布线层202通过电镀工艺形成于下方的介电层201,或者用于承载封装基板10的承载板上。In manufacturing the package substrate 10 shown in FIG. 16, the metal wiring layer 202 is formed on the dielectric layer 201 underneath through a plating process, or on a carrier board used to carry the package substrate 10.
上述介电层201采用半固化树脂材料构成,可以通过压合工艺,压合于已经形成有金属导线202的基板上,使得该介电层201下方的金属导线202嵌入上述介电层201中。The above-mentioned dielectric layer 201 is made of semi-cured resin material, and can be pressed on the substrate on which the metal wire 202 has been formed by a pressing process, so that the metal wire 202 under the dielectric layer 201 is embedded in the above-mentioned dielectric layer 201.
此外,封装基板10中,最上方和最下方的芯板20的外表面覆盖有阻焊层(solder mask)40,或称为绿油。上述阻焊层40用于对封装基板10最外侧的金属布线层进行保护。In addition, in the package substrate 10, the outer surfaces of the uppermost and lowermost core boards 20 are covered with a solder mask 40, or green oil. The solder resist layer 40 is used to protect the outermost metal wiring layer of the package substrate 10.
在此情况下,当构成辅助结构30的材料为金属材料时,同理可得,辅助结构30的材料可以与上述金属导线202的材料相同。In this case, when the material constituting the auxiliary structure 30 is a metal material, the same can be said that the material of the auxiliary structure 30 may be the same as the material of the metal wire 202 described above.
此外,为了使得辅助结构30能够固定于封装基板10的上表面A1,需要在阻焊层40上开孔,以露出下方的金属导线202。然后,通过植球工艺制作如图16所示的,球形的辅助结构30。In addition, in order to enable the auxiliary structure 30 to be fixed to the upper surface A1 of the package substrate 10, a hole needs to be formed in the solder resist layer 40 to expose the metal wires 202 below. Then, a ball-shaped auxiliary structure 30 as shown in FIG. 16 is manufactured by a ball-balling process.
或者,采用电镀工艺,焊阻层40的开窗位置,电镀形成如图17所示的,立方块形状的辅助结构30。Alternatively, an electroplating process is used to form a cubic block-shaped auxiliary structure 30 as shown in FIG. 17 at the window opening position of the solder resist layer 40.
上述辅助结构30与封装基板10上表面A1,通过阻焊层40上的开孔露出的金属导线202相接触,从而使得辅助结构30能够固定于封装基板10的上表面A1。The auxiliary structure 30 is in contact with the upper surface A1 of the package substrate 10 and the metal wires 202 exposed through the openings in the solder resist layer 40, so that the auxiliary structure 30 can be fixed to the upper surface A1 of the package substrate 10.
在本申请的另一些实施例中,当构成辅助结构30的材料为树脂材料时,为了简述制作工艺,辅助结构30的材料可以与上述阻焊层40的材料相同。In other embodiments of the present application, when the material constituting the auxiliary structure 30 is a resin material, in order to briefly describe the manufacturing process, the material of the auxiliary structure 30 may be the same as the material of the solder resist layer 40 described above.
基于此,可以采用植球工艺,在阻焊层40的表面形成如图18所示的,球形的辅助结构30。Based on this, a ball bumping process may be used to form a spherical auxiliary structure 30 as shown in FIG. 18 on the surface of the solder resist layer 40.
或者,采用印刷工艺,在阻焊层40的表面形成如图19所示的,立方块形状的辅助结构30。Alternatively, a printing process is used to form a cubic auxiliary structure 30 as shown in FIG. 19 on the surface of the solder resist layer 40.
本申请实施例提供一种电子设备03,如图20所示,包括印刷电路板(printed circuit board,PCB)、第三电连接件23,以及如上所述的任意一种半导体封装件01。An embodiment of the present application provides an electronic device 03, as shown in FIG. 20, which includes a printed circuit board (PCB), a third electrical connector 23, and any of the semiconductor packages 01 as described above.
该第三电连接件23位于半导体封装件01和PCB之间,且排布于半导体封装件01的下表面(即靠近PCB的一侧表面)上。The third electrical connector 23 is located between the semiconductor package 01 and the PCB, and is arranged on the lower surface of the semiconductor package 01 (ie, the side surface close to the PCB).
上述第三电连接件23用于将半导体封装件01与PCB电连接。The third electrical connector 23 is used to electrically connect the semiconductor package 01 and the PCB.
上述电子设备具有与前述实施例提供的半导体封装件01相同的技术效果,此处不再赘述。The above-mentioned electronic device has the same technical effect as the semiconductor package 01 provided in the foregoing embodiment, and will not be repeated here.
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。The above are only the specific embodiments of the present invention, but the scope of protection of the present invention is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present invention. It should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (13)

  1. 一种半导体封装件,其特征在于,包括:A semiconductor package is characterized by comprising:
    封装基板,具有相对设置的上表面和下表面;The package substrate has an upper surface and a lower surface which are arranged oppositely;
    半导体器件,位于所述封装基板的上表面;A semiconductor device located on the upper surface of the packaging substrate;
    多个第一电连接件,排布于所述半导体器件的下表面,用于将所述半导体器件与所述封装基板电连接;A plurality of first electrical connectors are arranged on the lower surface of the semiconductor device, and are used to electrically connect the semiconductor device and the packaging substrate;
    多个辅助结构,排布于所述封装基板的上表面,并从所述封装基板的上表面凸出;所述辅助结构在所述半导体器件下表面上的正投影,位于所述半导体器件下表面上未设置所述第一电连接件的部分。A plurality of auxiliary structures are arranged on the upper surface of the packaging substrate and protrude from the upper surface of the packaging substrate; the orthographic projection of the auxiliary structures on the lower surface of the semiconductor device is located under the semiconductor device No part of the first electrical connection is provided on the surface.
  2. 根据权利要求1所述的半导体封装件,其特征在于,所述封装基板包括至少一层金属布线层,所述金属布线层包括多条金属导线;The semiconductor package according to claim 1, wherein the packaging substrate includes at least one metal wiring layer, and the metal wiring layer includes a plurality of metal wires;
    构成所述辅助结构的材料为金属材料;所述辅助结构与所述封装基板上表面露出的金属导线相接触。The material constituting the auxiliary structure is a metal material; the auxiliary structure is in contact with the metal wires exposed on the upper surface of the packaging substrate.
  3. 根据权利要求1所述的半导体封装件,其特征在于,所述辅助结构的材料与所述金属导线的材料相同。The semiconductor package according to claim 1, wherein the material of the auxiliary structure is the same as the material of the metal wire.
  4. 根据权利要求1所述的半导体封装件,其特征在于,所述封装基板包括至少一层金属布线层,以及覆盖最外侧的所述金属布线层的阻焊层;The semiconductor package according to claim 1, wherein the packaging substrate includes at least one metal wiring layer, and a solder resist layer covering the outermost metal wiring layer;
    构成所述辅助结构的材料,与所述阻焊层的材料相同。The material constituting the auxiliary structure is the same as the material of the solder resist layer.
  5. 根据权利要求1-4任一项所述的半导体封装件,其特征在于,所述第一电连接件包括焊锡凸块、焊球或者铜柱。The semiconductor package according to any one of claims 1 to 4, wherein the first electrical connector includes solder bumps, solder balls, or copper pillars.
  6. 根据权利要求5所述的半导体封装件,其特征在于,所述辅助结构的形状以及外形尺寸与所述第一电连接件相同。The semiconductor package according to claim 5, wherein the auxiliary structure has the same shape and external dimensions as the first electrical connector.
  7. 根据权利要求6所述的半导体封装件,其特征在于,The semiconductor package according to claim 6, wherein:
    任意相邻两个辅助结构之间的间距,与所述多个第一电连接件中,相邻两个第一电连接件之间的间距相同。The spacing between any two adjacent auxiliary structures is the same as the spacing between two adjacent first electrical connectors in the plurality of first electrical connectors.
  8. 根据权利要求1-5任一项所述的半导体封装件,其特征在于,所述辅助结构为立方块,且所述辅助结构的体积大于所述第一电连接件的体积。The semiconductor package according to any one of claims 1 to 5, wherein the auxiliary structure is a cube, and the volume of the auxiliary structure is larger than the volume of the first electrical connection.
  9. 根据权利要求1-8任一项所述的半导体封装件,其特征在于,所述辅助结构与所述半导体器件下表面上,未设置所述第一电连接件的部分相接触。The semiconductor package according to any one of claims 1-8, wherein the auxiliary structure is in contact with a portion of the lower surface of the semiconductor device where the first electrical connector is not provided.
  10. 根据权利要求1-9任一项所述的半导体封装件,其特征在于,所述半导体封装件还包括底胶;The semiconductor package according to any one of claims 1-9, wherein the semiconductor package further comprises a primer;
    所述底胶填充于所述封装基板与所述半导体器件之间。The primer is filled between the packaging substrate and the semiconductor device.
  11. 根据权利要求1-10任一项所述的半导体封装件,其特征在于,所述半导体器件为裸芯片;The semiconductor package according to any one of claims 1-10, wherein the semiconductor device is a bare chip;
    所述辅助结构在所述裸芯片的有源面上的正投影,位于所述裸芯片有源面上未设置所述第一电连接件的部分。An orthographic projection of the auxiliary structure on the active surface of the bare chip is located on a portion of the bare chip active surface where the first electrical connector is not provided.
  12. 根据权利要求1-10任一项所述的半导体封装件,其特征在于,所述半导体器件包括:The semiconductor package according to any one of claims 1-10, wherein the semiconductor device comprises:
    重布线层,包括相对设置的上表面和下表面;Redistribution layer, including upper and lower surfaces oppositely arranged;
    裸芯片,位于所述重布线层的上表面;A bare chip, located on the upper surface of the redistribution layer;
    多个第二电连接件,排布于所述裸芯片的有源面上,用于将所述裸芯片与所述重布线层电连接;A plurality of second electrical connectors are arranged on the active surface of the bare chip, and are used to electrically connect the bare chip and the redistribution layer;
    所述辅助结构在所述重布线层的下表面上的正投影,位于所述重布线层下表面上未设置所述第一电连接件的部分。An orthographic projection of the auxiliary structure on the lower surface of the redistribution layer is located on a portion of the lower surface of the redistribution layer where the first electrical connector is not provided.
  13. 一种电子设备,其特征在于,包括印刷电路板、第三电连接件,以及如权利要求1-12任一项所述的半导体封装件;An electronic device, comprising a printed circuit board, a third electrical connector, and the semiconductor package according to any one of claims 1-12;
    所述第三电连接件位于所述半导体封装件和所述印刷电路板之间,且排布于所述半导体封装件上;所述第三电连接件用于将所述半导体封装件与所述印刷电路板电连接。The third electrical connector is located between the semiconductor package and the printed circuit board and is arranged on the semiconductor package; the third electrical connector is used to connect the semiconductor package and the The printed circuit board is electrically connected.
PCT/CN2018/124013 2018-12-26 2018-12-26 Semiconductor package and electronic device WO2020132977A1 (en)

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CN112310008A (en) * 2020-10-29 2021-02-02 华天科技(南京)有限公司 Packaging structure provided with substrate pre-brushing glue and manufacturing method thereof

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CN112289751A (en) * 2020-10-29 2021-01-29 华天科技(南京)有限公司 Packaging structure provided with substrate pre-printed tin and manufacturing method thereof
CN112310008A (en) * 2020-10-29 2021-02-02 华天科技(南京)有限公司 Packaging structure provided with substrate pre-brushing glue and manufacturing method thereof

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