CN101118885A - Crystal-coated packaging structure - Google Patents
Crystal-coated packaging structure Download PDFInfo
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- CN101118885A CN101118885A CNA2006100991902A CN200610099190A CN101118885A CN 101118885 A CN101118885 A CN 101118885A CN A2006100991902 A CNA2006100991902 A CN A2006100991902A CN 200610099190 A CN200610099190 A CN 200610099190A CN 101118885 A CN101118885 A CN 101118885A
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- those
- projection
- packing structure
- projections
- composite packing
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- 239000013078 crystal Substances 0.000 title abstract 2
- 238000004806 packaging method and process Methods 0.000 title 1
- 238000003466 welding Methods 0.000 claims abstract description 14
- 239000003292 glue Substances 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims description 44
- 238000012856 packing Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 230000012447 hatching Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 238000005429 filling process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Packaging Frangible Articles (AREA)
Abstract
The present invention relates to a crystal coating sealing structure, which comprises a wafer, a soft bearing device, a plurality of protruding blocks, a plurality of imitating protruding blocks, and a bottom glue layer. The wafer is provided with an active surface and a plurality of welding mats positioned on the active surface, and the soft bearing device is provided with a soft basal plate and a circuit layer positioned on the soft basal plate. In addition, the protruding block is positioned on the welding mat, wherein the circuit layer is electrically connected with the welding mat through the protruding block, and the bottom glue layer is arranged between the wafer and the soft bearing device to wrap the protruding blocks and the imitate protruding blocks. The present invention can reduce the distorting amount of the soft bearing device by installing a plurality of imitate protruding blocks on the active face of the wafer, thereby reducing the hole producing in the bottom glue layer.
Description
Technical field
The invention relates to a kind of composite packing structure, and particularly wafer is overlying on composite packing structure on the soft carrier relevant for a kind of.
Background technology
Chip package technology (Flip Chip Package Technology) mainly is that the active surface (active surface) at wafer is gone up configuration a plurality of weld pads (bonding pad), and on these weld pads, form projection (bump) respectively, can electrical (electrically) be connected on the soft carrier (flexible carrier) by the projection on the weld pad, wherein soft carrier for example is flexible circuit board (Flexible Printed Circuit board is called for short FPC).It should be noted that, because the chip bonding technology can be applicable to the chip package structure of high pin number (High Pin Count), and have plurality of advantages such as the package area of dwindling and shortening signal transmission path, make the chip package technology be widely used in the wafer package field at present.
Fig. 1 is the schematic diagram of existing a kind of composite packing structure.Please refer to Fig. 1, existing composite packing structure 100 comprises a wafer 110, one soft carrier 120, a plurality of projection 130 and a primer layer (underfill layer) 140.Wafer 110 has an active surface 112, a plurality of weld pad 114, and wherein weld pad 114 is positioned on the active surface 112, and projection 130 promptly is to be disposed on the weld pad 114.Wafer 110 can electrically connect via these projections 130 and soft carrier 120.In addition, between wafer 110 and soft carrier 120, form primer layer 140 to coat projection 130, wherein the thermal stress (thermalstress) of primer layer 140 in order to be produced between buffering wafer 110 and the soft carrier 120.
From the above, if wafer 110 is electrically connected via projection 130 and soft carrier 120, then must carry out a reflow (reflow) processing procedure to composite packing structure 100.It should be noted that in back welding process soft carrier 120 can be heated and expand, and after finishing back welding process, the reduction of ambient temperature and soft carrier 120 flexible character own will make soft carrier 120 produce the phenomenon of contraction distortions.Thus, desire between wafer 110 and soft carrier 120 cast primer material when forming the primer layer 140 that coats projection 130, the primer material just can't be full of 120 of wafer 110 and soft carriers fully, makes primer layer 140 have a plurality of holes (void) 142.
Yet primer layer has a plurality of holes will make primer layer can't coat projection fully, and the part projection promptly is exposed in the environment.In other words, projection is subjected to ectocine easily and produces the crack, and then has influence on the reliability of composite packing structure.Therefore, the hole generation that how to reduce in the primer layer is an important topic with the reliability that improves composite packing structure.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of composite packing structure exactly, can be by on the active surface of wafer, setting a plurality of plan projections reducing the deflection of soft carrier, and then the hole that reduces in the primer layer produces.
For reaching above-mentioned purpose of the present invention, the present invention proposes a kind of composite packing structure, and it comprises a wafer, a soft carrier, a plurality of projection, a plurality of plan projection and a primer layer.Wafer has an active surface and is disposed at a plurality of weld pads of active surface, and soft carrier then has a flexible base plate and and is disposed at line layer on the flexible base plate.In addition, projection is to be disposed on the weld pad, and wherein line layer is to electrically connect via projection and weld pad.In addition, intending projection is to be disposed on the active surface, and wherein soft carrier is connected with the active surface of wafer via intending projection, and primer layer then is between wafer and soft carrier, to coat these projections and these plan projections.
In one embodiment of this invention, wafer for example more comprises a plurality of plan weld pads that are disposed on the active surface, and these plan projections are disposed on these plan weld pads.
In one embodiment of this invention, line layer for example is to intend projection and these plan weld pad electric connections via these.
In one embodiment of this invention, soft carrier comprises that more one is disposed at the welding resisting layer on the line layer, and welding resisting layer exposes the line layer that electrically connects with these projections and these plan projections.
In one embodiment of this invention, projection for example is golden projection.
In one embodiment of this invention, intending projection for example is golden projection.
In one embodiment of this invention, composite packing structure for example more comprises an electric conducting material, and wherein electric conducting material is disposed between line layer and projection and line layer and the plan projection, and line layer is via electric conducting material and projection and the electric connection of plan projection.
In one embodiment of this invention, electric conducting material for example is scolder, conductivity type B rank glue material, anisotropic conductive or anisotropy conducting film.
In one embodiment of this invention, soft carrier for example is a flexible circuit board.
In one embodiment of this invention, the material of flexible base plate for example is a pi.
In one embodiment of this invention, the material of line layer for example is a copper.
Based on above-mentioned, the present invention sets a plurality of plan projections on the active surface of wafer, and these are intended projection and help the areal deformation amount of soft carrier more not obvious in the process of wafer and the electric connection of soft carrier.Therefore, when forming primer layer when the space that is surrounded between primer material injection wafer and the soft carrier, the primer material can inject smooth-goingly, thereby can reduce the probability of the inside formation hole of primer layer, and then improves the yield of primer filling process.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, a plurality of embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the schematic diagram of existing a kind of composite packing structure.
Fig. 2 A is the vertical view of bowing of the composite packing structure of first embodiment of the invention.
Fig. 2 B is the cutaway view of the composite packing structure of Fig. 2 A along hatching A-A '.
Fig. 3 A is the vertical view of bowing of the composite packing structure of second embodiment of the invention.
Fig. 3 B is the cutaway view of the composite packing structure of Fig. 3 A along hatching A-A '.
Fig. 4 A is the vertical view of bowing of the composite packing structure of third embodiment of the invention.
Fig. 4 B is the cutaway view of the composite packing structure of Fig. 4 A along hatching A-A '.
Fig. 4 C is the profile of the composite packing structure of Fig. 4 B in region R.
100,200,300,400: composite packing structure
110,210: wafer
112,212: active surface
114,214: weld pad
120,220: soft carrier
130,230: projection
140,250: primer layer
142: hole
216: intend weld pad
222: flexible base plate
224: line layer
226: welding resisting layer
240: intend projection
260: electric conducting material
Embodiment
Fig. 2 A is the vertical view of the composite packing structure of first embodiment of the invention, and Fig. 2 B is the cutaway view of the composite packing structure of Fig. 2 A along hatching A-A '.Please also refer to Fig. 2 A and Fig. 2 B, the composite packing structure 200 of present embodiment comprises a wafer 210, one soft carrier 220, a plurality of projection 230, a plurality of plan projection (dummy bump) 240 and one primer layer 250.In the present embodiment, wafer 210 has an active surface 212 and a plurality of weld pads 214, and wherein these weld pads 214 are to be disposed on the active surface 212.220 of soft carriers have a flexible base plate 222 and and are disposed at line layer 224 on the flexible base plate 222, and wherein soft carrier 220 for example is a flexible circuit board, and the material of flexible base plate 222 for example is pi (polymide is called for short PI).
In addition, projection 230 is to be disposed on the weld pad 214, and line layer 224 promptly electrically connects via the weld pad in projection 230 and the wafer 210 214.In other words, the signal that wafer 210 is produced can transmit by the line layer 224 of soft carrier 220, and wherein projection 230 for example is golden projection (goldbump), and the material of line layer 224 for example is a copper.
In addition, intending projection 240 is to be disposed on the active surface 212, and wherein soft carrier 220 is connected with the active surface 212 of wafer via intending projection 240, for example is golden projection and intend projection.In the present embodiment, projection 230 and plan projection 240 on average are equipped on each zone on the active surface 212.Therefore, in the engaging process of wafer 210 and soft carrier 220, the existence of intending projection 240 will help to reduce the phenomenon of soft carrier 220 contraction distortion in back welding process.Compared to prior art, the metaboly on soft carrier 220 surfaces of present embodiment is more not obvious.Thus, when cast primer material is with formation primer layer 250 between wafer 210 and soft carrier 220, the mobile of primer material will be comparatively smooth-going, so the inside that can reduce primer layer 250 forms the probability of hole, and then improve the yield of primer filling process, wherein the primer material is to utilize capillarity (capillarity) to insert the space of 220 of (dispense) wafer 210 and soft carriers lentamente.It should be noted that primer layer 250 coats projection 230 and intends projection 240, can prevent that so projection 230 and plan projection 240 are damaged.
Fig. 3 A is the vertical view of the composite packing structure of second embodiment of the invention, and Fig. 3 B is the cutaway view of the composite packing structure of Fig. 3 A along hatching A-A '.Please also refer to Fig. 3 A and Fig. 3 B, the composite packing structure 300 of present embodiment and the composite packing structure 200 of first embodiment are similar, for its main difference is, the wafer 210 of present embodiment more comprises a plurality of plan weld pads (dummy bonding pad) 216 that are disposed on the active surface 212, is disposed on the plan weld pad 216 and intend projection 240.Thus, line layer 224 can be intended projection 240 via these and intend weld pad 216 electric connections with these.It should be noted that intending weld pad 216 can be used as multiple use according to the difference on the function in the present embodiment.For instance, intend weld pad 216 and for example can be ground connection weld pad (ground pad) or power supply weld pad (power pad), intending projection 240 then for example is ground connection projection (ground bump) or power supply projection (power bump).In addition, the heat that plan projection 240 also can be produced wafer 210 inside conducts to soft carrier 220, and is by the fin (not shown) that is disposed on the soft carrier 220 that the heat heat radiation is extremely extraneous again.Certainly, the primer material can be cast between wafer 210 and the soft carrier 220 smooth-goingly and coat projection 230 and the primer layer 250 of intending projection 240 to form.
Fig. 4 A is the vertical view of the composite packing structure of third embodiment of the invention, and Fig. 4 B is the cutaway view of the composite packing structure of Fig. 4 A along hatching A-A ', and Fig. 4 C is the profile of the composite packing structure of Fig. 4 B in region R.Please also refer to Fig. 4 A, Fig. 4 B and Fig. 4 C, the composite packing structure 400 of present embodiment and the composite packing structure 300 of second embodiment are similar, for its main difference is, composite packing structure 400 its soft carriers 220 of present embodiment comprise that more one is disposed at the welding resisting layer 226 on the line layer 224, and wherein welding resisting layer 226 exposes with these projections 230 and these and intends the line layer 224 that projection 240 electrically connects.Thus, weld pad 214 can be electrically connected to line layer 224 by projection 230 and plan projection 240 respectively with plan weld pad 216.In addition, can the excellent electrical property annexation be arranged with line layer 224 for making projection 230 and intending projection 240, composite packing structure 400 for example more comprises an electric conducting material 260, and wherein electric conducting material 260 is disposed at line layer 224 and projection 230 and line layer 224 and intends between the projection 240.Therefore, line layer 224 can successfully electrically connect with projection 230 and plan projection 240 via electric conducting material 260.For instance, electric conducting material 260 can be scolder, conductivity type B rank glue material (Conductive B-stage adhesion), anisotropic conductive (Anisotropic Conductive Paste, be called for short ACP) or anisotropy conducting film (Anisotropic Conductive Film is called for short ACF).Certainly, mentioned in the present embodiment welding resisting layer 226 also can be applicable to previous embodiment with electric conducting material 260, and the present invention is not limited at this.In addition, the present invention does not also limit weld pad 230 and arrangement mode or the distributing position of intending weld pad 240 on the wafer 210 at this.
In sum, the present invention uses a plurality of plan projections and reduce the metaboly that soft carrier is caused in the process that electrically connects with wafer, when forming primer layer so the primer material injects the space that is surrounded between wafer and the soft carrier, the mobile of primer material will be comparatively smooth-going.So, the inside that can reduce primer layer forms the probability of hole, and then improves the yield of primer filling process.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1. composite packing structure is characterized in that it comprises:
One wafer has an active surface and a plurality of weld pads that are disposed at this active surface;
One soft carrier has a flexible base plate and and is disposed at line layer on this flexible base plate;
A plurality of projections are disposed on those weld pads, and wherein this line layer electrically connects via those projections and those weld pads;
A plurality of plan projections are disposed on this active surface, and wherein this soft carrier is connected with this active surface of this wafer via those plan projections; And
One primer layer is between this wafer and this soft carrier, to coat those projections and those plan projections.
2. composite packing structure according to claim 1 is characterized in that wherein said wafer more comprises a plurality of plan weld pads that are disposed on this active surface, and those plan projections are disposed on those plan weld pads.
3. composite packing structure according to claim 2 is characterized in that wherein said line layer is intended projection via those and those intend the weld pad electric connection.
4. composite packing structure according to claim 3 is characterized in that wherein said soft carrier comprises that more one is disposed at the welding resisting layer on this line layer, and this welding resisting layer exposes this line layer that electrically connects with those projections and those plan projections.
5. composite packing structure according to claim 1 is characterized in that wherein said projection comprises golden projection.
6. composite packing structure according to claim 1 is characterized in that wherein said plan projection comprises golden projection.
7. composite packing structure according to claim 1, it is characterized in that it more comprises an electric conducting material, wherein this electric conducting material is disposed between this line layer and those projections and this line layer and those plan projections, and this line layer is via this electric conducting material and those projections and those plan projection electric connections.
8. composite packing structure according to claim 7 is characterized in that wherein said electric conducting material comprises scolder, conductivity type B rank glue material, anisotropic conductive or anisotropy conducting film.
9. composite packing structure according to claim 1 is characterized in that wherein said soft carrier comprises flexible circuit board.
10. composite packing structure according to claim 1 is characterized in that the material of wherein said line layer comprises copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100991902A CN101118885A (en) | 2006-08-02 | 2006-08-02 | Crystal-coated packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100991902A CN101118885A (en) | 2006-08-02 | 2006-08-02 | Crystal-coated packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101118885A true CN101118885A (en) | 2008-02-06 |
Family
ID=39054910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100991902A Pending CN101118885A (en) | 2006-08-02 | 2006-08-02 | Crystal-coated packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101118885A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924126A (en) * | 2009-05-28 | 2010-12-22 | Tdk株式会社 | Organic EL display |
| CN101572237B (en) * | 2008-05-04 | 2011-01-05 | 南茂科技股份有限公司 | Encapsulation structure and encapsulation method for modularization crystal grains |
| CN107527554A (en) * | 2017-08-23 | 2017-12-29 | 京东方科技集团股份有限公司 | Flexible display panels and preparation method thereof, flexible display apparatus |
| WO2020132977A1 (en) * | 2018-12-26 | 2020-07-02 | 华为技术有限公司 | Semiconductor package and electronic device |
-
2006
- 2006-08-02 CN CNA2006100991902A patent/CN101118885A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101572237B (en) * | 2008-05-04 | 2011-01-05 | 南茂科技股份有限公司 | Encapsulation structure and encapsulation method for modularization crystal grains |
| CN101924126A (en) * | 2009-05-28 | 2010-12-22 | Tdk株式会社 | Organic EL display |
| CN101924126B (en) * | 2009-05-28 | 2012-09-19 | 双叶电子工业株式会社 | Organic EL display apparatus |
| CN107527554A (en) * | 2017-08-23 | 2017-12-29 | 京东方科技集团股份有限公司 | Flexible display panels and preparation method thereof, flexible display apparatus |
| US10622330B2 (en) | 2017-08-23 | 2020-04-14 | Boe Technology Group Co., Ltd. | Flexible display panel and preparation method thereof, flexible display device |
| WO2020132977A1 (en) * | 2018-12-26 | 2020-07-02 | 华为技术有限公司 | Semiconductor package and electronic device |
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