WO2020125468A1 - 腔室进气结构以及反应腔室 - Google Patents

腔室进气结构以及反应腔室 Download PDF

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Publication number
WO2020125468A1
WO2020125468A1 PCT/CN2019/123984 CN2019123984W WO2020125468A1 WO 2020125468 A1 WO2020125468 A1 WO 2020125468A1 CN 2019123984 W CN2019123984 W CN 2019123984W WO 2020125468 A1 WO2020125468 A1 WO 2020125468A1
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WO
WIPO (PCT)
Prior art keywords
chamber
uniform flow
channel
air
plate body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/123984
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English (en)
French (fr)
Inventor
徐刚
张军
郑波
马振国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201822125785.1U external-priority patent/CN209298073U/zh
Priority claimed from CN201811550798.1A external-priority patent/CN109637952B/zh
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to JP2021512747A priority Critical patent/JP7179972B2/ja
Priority to KR1020217013431A priority patent/KR102465613B1/ko
Publication of WO2020125468A1 publication Critical patent/WO2020125468A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Definitions

  • the invention relates to the technical field of semiconductor manufacturing, in particular to a chamber air intake structure and a reaction chamber.
  • silicon-based materials such as silicon or polysilicon.
  • the surface of the silicon (or polysilicon) placed in the air will naturally oxidize a dense SiO 2 layer.
  • the film should be in direct contact with the silicon substrate. If there is a layer of SiO 2 on the surface of the substrate, the resistivity of the film will increase, which will affect the device performance. For this reason, this layer of SiO 2 needs to be removed before the subsequent process.
  • embodiments of the present invention provide a chamber air intake structure and a reaction chamber.
  • a chamber air intake structure including a jet disk assembly, the jet disk assembly including a jet surface; and, the jet disk assembly is provided with a first central channel and a A second central channel, a first uniform channel and a second uniform channel isolated from each other, and a first uniform channel and a second uniform channel isolated from each other, ,
  • the air inlet end of the first uniform flow channel is connected to the air outlet end of the first central channel through the first uniform flow cavity, and there are multiple air outlet ends of the first uniform flow channel, which are evenly distributed in all On the surface of the jet;
  • the air inlet end of the second uniform flow channel is connected to the air outlet end of the second central channel through the second uniform flow cavity, and there are multiple air outlet ends of the second uniform flow channel, which are evenly distributed in the Described on the surface of the jet.
  • the jet disk assembly includes:
  • An air intake component is provided on the upper cover of the chamber, and both the first center channel and the second center channel are provided in the air intake component, and the air intake component includes an air outlet surface and the air intake surface A first central boss on the air outlet surface, the air outlet end of the first central channel is located on the table surface of the first central boss, and the air outlet end of the second central channel is located on the air outlet surface;
  • the air jet disk is spaced apart from the upper cover of the chamber to form the second uniform flow cavity, and the air jet disk is sealingly butted with the table surface of the first central boss.
  • the air jet disk includes a first plate body and a second plate body stacked on top of each other; wherein,
  • the first plate body is spaced from the chamber upper cover to form the second uniform flow cavity, and the first plate body is sealingly butted with the table of the first central boss, and the first plate body A central through hole and a plurality of first through holes are provided in the center, and both ends of the central through hole communicate with the first central channel and the first uniform flow cavity respectively;
  • the second plate body is located on the first A side of a plate body far away from the upper cover of the chamber, and a plurality of second through holes are provided in the second plate body, the number of the second through holes is the same as the number of the first through holes , And provided in a one-to-one correspondence, the first through hole and the second through hole corresponding thereto constitute the second uniform flow channel;
  • At least one of the two opposite surfaces of the first plate body and the second plate body is provided with a uniform flow channel for forming between the first plate body and the second plate body
  • the first uniform flow cavity; and, the surface of the second plate body away from the first plate body is the jet surface, and a plurality of A third through hole of the first uniform flow channel, one end of the third through hole communicates with the uniform flow channel, and the other end is located on the air jet surface.
  • a plurality of concentric ring-shaped bosses are provided on at least one of the two opposite surfaces of the first plate body and the second plate body, and two adjacent rings
  • An annular groove is formed between the convex bosses; and each of the annular bosses includes a plurality of sub-bosses arranged at intervals along the circumferential direction thereof, and the sub-groove and phase between two adjacent sub-bosses The adjacent annular grooves are connected to form the uniform flow channel;
  • Each second through hole is provided corresponding to each annular boss; each third through hole is provided corresponding to each annular groove.
  • each of the sub-grooves and the adjacent sub-grooves are arranged along the radial direction of the second plate body, so as to form a plurality of radial grooves in a radial shape at the center.
  • the second through holes corresponding to the same annular boss are evenly distributed along the circumferential direction of the annular boss; the third through holes corresponding to the same annular groove are along The circumferential direction of the annular groove is evenly distributed.
  • the air intake structure of the chamber further includes a uniform flow plate, the uniform flow plate is disposed between the upper cover of the chamber and the air jet plate, and is sealed with the table of the first central boss Docking
  • the uniform flow plate and the air jet disk are spaced apart to divide the second uniform flow chamber into a third uniform flow chamber and a fourth uniform flow chamber, and the second uniform flow channel communicates with the third uniform flow chamber
  • a second center boss is provided on the surface of the uniform flow plate opposite to the air jet plate, the second central boss is sealingly butted with the air jet plate, and a center is provided in the uniform flow plate
  • a connection hole and a plurality of uniform flow holes wherein the inlet end of the central connection hole communicates with the outlet end of the first central channel, and the outlet end of the center connection hole is located on the table of the second central boss And communicate with the first uniform flow chamber; the two ends of each uniform flow hole communicate with the third uniform flow chamber and the fourth uniform flow chamber, respectively.
  • each of the uniform flow holes and the intake end of the second uniform flow channel are interleaved with each other.
  • the air intake structure of the chamber further includes a connector device, and the connector device includes a first connector, the first connector is stacked on a side of the air intake member that is far from the jet disc On the side surface, and a first intake passage and a second intake passage which are spaced apart from each other are provided in the first connecting member, and the respective outlet ends of the first intake passage and the second intake passage are respectively The respective intake ends of the first central channel and the second central channel are connected; the respective intake ends of the first and second intake channels are located at different orientations of the first connector On both surfaces.
  • the chamber air intake structure further includes a second connector, the second connector is stacked on the surface where the air inlet end of the second air inlet channel of the first connector is located; And a recess is provided on at least one of two surfaces of the second connector and the first connector opposite to form a mixing chamber between the second connector and the first connector ;
  • the second connecting piece is further provided with a mixing channel, an inlet end of the mixing channel is connected to a plurality of gas pipelines, and an outlet end of the mixing channel is in communication with the mixing chamber.
  • the present invention also provides a reaction chamber, including: a chamber and a chamber upper cover provided on the top of the chamber, the chamber upper cover is provided with the above-mentioned chamber provided by the present invention Intake structure.
  • the chamber air intake structure provided by the invention uses two isolated air intake paths in the jet disc assembly to realize the independent delivery of gas into the chamber, which can prevent the gas from mixing and reacting before entering the chamber; at the same time, due to the two Each air intake path adopts central air intake, which can avoid the gas distribution offset in the chamber, and the two air intake paths use the uniform flow cavity and the uniform air channel to achieve uniform flow, which can ensure that the two intake air The path enters the gas uniformity in the chamber.
  • the structure of the air jet disk is simple and easy to process.
  • the reaction chamber provided by the present invention by adopting the above-mentioned chamber intake structure provided by the present invention, can not only avoid the occurrence of gas distribution bias in the chamber, but also improve the uniformity of gas distribution.
  • FIG. 1 is a schematic structural diagram of an embodiment of a chamber air intake structure according to an embodiment of the present invention
  • FIG. 2 is a partially enlarged schematic view of part I of an embodiment of a chamber air intake structure according to an embodiment of the present invention
  • FIG. 3 is a schematic front view of an air jet disk according to an embodiment of a chamber air intake structure provided by an embodiment of the present invention
  • FIG. 4 is a schematic top view of a second plate body of a gas jet disk according to an embodiment of a chamber intake structure provided by an embodiment of the present invention
  • FIG. 5 is a schematic plan view of a first plate body of a gas jet disk according to an embodiment of a chamber intake structure provided by an embodiment of the present invention
  • 6A, 6B, and 6C are schematic diagrams of a top view, a side view, and a bottom view of a uniform flow plate according to an embodiment of a chamber air intake structure according to an embodiment of the present invention
  • 7A and 7B are respectively a bottom view and an A-A cross-sectional schematic view of an air intake part of an embodiment of a chamber air intake structure according to an embodiment of the present invention
  • 8A, 8B, and 8C are respectively a top view, a A-A cross-sectional view, and a bottom view of a first connector of an embodiment of a chamber air intake structure according to an embodiment of the present invention
  • 9A, 9B, and 9C are schematic diagrams of a top view, A-A cross-section, and bottom view of a second connector of an embodiment of a chamber air intake structure according to an embodiment of the present invention.
  • an embodiment of the present invention provides a reaction chamber, which includes a chamber 305 and a chamber upper cover 304 disposed at the top of the chamber 305, and disposed in the chamber 305 for carrying a workpiece to be processed
  • the base 307 is also provided with a pipeline for passing heated liquid and back-blowing gas.
  • the reaction chamber also includes vacuum system, vacuum measurement equipment and other related equipment.
  • the present invention also provides a chamber air intake structure, the chamber air intake structure is disposed on the chamber upper cover 304, and is located below the chamber upper cover 304.
  • the air intake structure of the chamber includes a jet disc assembly including a connector device, an air intake part 310, a uniform flow plate 309, and a jet disc 308.
  • the air intake member 310 is provided on the chamber upper cover 304, specifically, a through hole penetrating in the vertical direction is provided in the chamber upper cover 304, and the air intake member 310 is installed in the through hole.
  • the intake member 310 is provided with a first central channel 041 and a second central channel 043, as shown in FIGS. 9B and 9C, the first central channel 041 is a straight through hole vertically penetrating through the intake member 310, the straight through hole
  • the axis of is coincident with the axis of the upper cover 304 of the chamber, so as to realize the central air intake and avoid the gas distribution offset in the chamber.
  • the second center channel 043 surrounds the first center channel 041 and is isolated from each other. As shown in FIG.
  • the second central channel 043 includes a plurality of straight through holes that vertically penetrate the air intake member 310, and is symmetrically distributed around the first central channel 041. Since the second center channel 043 surrounds the first center channel 041, and the center of the surround coincides with the axis of the chamber upper cover 304, this can also achieve central air intake and avoid gas distribution offset in the chamber. Of course, in practical applications, the second central channel 043 may also use a closed annular through hole.
  • the air intake member 310 includes an air outlet surface B and a first center boss 3101 provided on the air outlet surface B, and the air outlet end of the first center channel 041 is located on the table C of the first center boss 3101;
  • the outlet end of the second central channel 043 is located on the outlet surface B.
  • the air-jet disc 308 and the chamber upper cover 304 are spaced apart, and a second uniform flow cavity is formed between the two, and the uniform flow plate 309 is provided between the chamber upper cover 304 and the air-jet disc 308 to divide the second uniform flow chamber into the first Three uniform flow chambers 313 and a fourth uniform flow chamber 314.
  • the outlet end of the second central channel 043 communicates with the third uniform flow chamber 313.
  • the uniform flow plate 309 is sealingly butted with the mesa C of the first central boss 3101, in other words, the first central boss 3101 passes through the third uniform flow chamber 313 and is sealingly butted with the uniform plate 309 so as to be located on the mesa C
  • the gas outlet of the first central channel 041 on the upper side can be isolated from the third uniform flow cavity 313, so as to ensure that the gas in the first central channel 041 will not mix with the gas in the third uniform flow cavity 313.
  • the air-jet disk 308 includes a first plate 3081 and a second plate 3082 that are stacked on each other.
  • the first plate 3081 and the second plate 3082 are fixedly connected, for example, welding or other connection methods may be used.
  • a fourth uniform flow cavity 314 is formed between the uniform flow plate 309 and the first plate body 3081, and, as shown in FIG. 5, the first plate body 3081 is provided with a central through hole 11 vertically penetrating the first plate body 3081 And a plurality of first through holes 12, wherein the axis of the central through hole 11 coincides with the axis of the first plate 3081; the plurality of first through holes 12 are evenly distributed with respect to the plane where the first plate 3081 is located.
  • the surface of the uniform flow plate 309 opposite to the first plate body 3081 is provided with a second center boss, which is sealingly butted with the first plate body 3081, in other words, the second center convex
  • the stage passes through the fourth uniform flow chamber 314 and is sealed and docked with the first plate 3081.
  • the uniform flow plate 309 is provided with a central connection hole 3091 and a plurality of uniform flow holes 3092; wherein, the intake end of the central connection hole 3091 and the first central channel 041 The air outlet is connected, and the air outlet of the central connection hole 3091 is located on the table surface of the second central boss and communicates with the central through hole 11 because the second central boss is sealingly butted with the first plate body 3081, thereby ensuring the central through hole Both 11 and the central connection hole 3091 are isolated from the fourth uniform flow cavity 314. Both ends of each uniform flow hole 3092 communicate with the third uniform flow chamber 313 and the fourth uniform flow chamber 314, respectively.
  • the edge of the uniform flow plate 309 is provided with convex edges 3093 respectively protruding upward and downward, to achieve the uniform flow plate 309 and the chamber upper cover 304 and the air jet disc respectively 308 are spaced apart to form a third uniform flow chamber 313 and a fourth uniform flow chamber 314.
  • the above-mentioned uniform flow plate 309 may not be provided.
  • the air jet disk 308 may be spaced from the chamber upper cover 304 to form the above-mentioned second uniform flow chamber, and the air jet disk 308 Sealed butt with the mesa C of the first center boss 3101.
  • the second plate body 3082 is located on the side of the first plate body 3081 away from the chamber upper cover 304, and the second plate body 3082 is provided with a plurality of second
  • the number of the through holes 13 and the number of the second through holes 13 are the same as the number of the first through holes 12 and are provided in a one-to-one correspondence.
  • the first through holes 12 and the corresponding second through holes 13 constitute a second uniform flow channel.
  • At least one of the two opposite surfaces of the first plate body 3081 and the second plate body 3082 is provided with a uniform flow channel 14 for forming a first plate body 3081 and the second plate body 3082 between the first plate body 3081 and the second plate body 3082.
  • a uniform flow cavity for example, the uniform flow channel 14 is provided on the second plate body 3082 to form a closed first uniform flow chamber with the lower surface of the first plate body 3081.
  • the surface of the second plate body 3082 on the side away from the first plate body 3081 is a jet surface A, which is exposed in the process space in the cavity 305.
  • the second plate body 3082 is provided with a plurality of third through holes 16.
  • the third through hole 16 communicates with the uniform flow channel 14, and the other end is located on the air injection surface A.
  • the third through hole 16 serves as a first uniform flow channel for delivering gas into the process space in the cavity 305.
  • the gas outlets of the plurality of third through holes 16 are evenly distributed on the gas injection surface A, so that the gas can be evenly delivered into the cavity 305.
  • the surface of the second plate 3082 opposite to the first plate 3081 is provided with a plurality of concentric annular bosses 15, and two adjacent annular Ring-shaped grooves are formed between the bosses 15; and each ring-shaped boss 15 includes a plurality of sub-bosses 151 arranged at intervals along its circumferential direction, and sub-grooves 152 between each adjacent two sub-bosses 151 Communicating with the adjacent annular groove constitutes the above-mentioned uniform flow channel 14.
  • each second through hole 13 is provided corresponding to each annular boss 15; each third through hole 16 is provided corresponding to each annular groove.
  • each annular groove can be communicated through each sub-groove 152 to form a uniform flow channel 14, and the second through hole 13 can also be made
  • the outlet end of the third outlet 16 and the outlet end of the third through hole 16 can be staggered in the radial direction of the jet surface A, which is more conducive to the two types of outlets from the outlet end of the second through hole 13 and the outlet end of the third through hole 16
  • the mixing of gases further improves the uniformity of gas mixing.
  • each sub-groove 152 and the adjacent sub-groove 152 are arranged in the radial direction of the second plate body 3082 to form a plurality of radial grooves that are radial in the center , So as to realize the interconnection of the annular grooves on the circumferences of different radii in the radial direction.
  • the second through holes 13 corresponding to the same annular boss 15 are evenly distributed along the circumferential direction of the annular boss 15; the third through holes 16 corresponding to the same annular groove are along the circumference of the annular groove To evenly distributed. This can improve the uniformity of the distribution in the circumferential direction of the air-blast surface A.
  • the number of second through holes 13 provided on the annular boss 15 on the inner ring is generally less than the number of second through holes 13 provided on the annular boss 15 on the outer ring. Quantity.
  • the diameter of the central through hole 11 in the first plate body 3081 is larger than the diameter of the first through hole 12 to ensure that the flow rate of the central intake air meets the requirements.
  • the first through hole 12 and the second through hole 13 have the same diameter.
  • the uniform flow holes 3092 in each uniform flow plate 309 and the first through holes 12 in the first plate body 3081 are staggered with each other to improve the degree of diffusion of gas in the fourth uniform flow chamber 314.
  • the connector device may have various structures.
  • the connector device includes: a first connector 311 and a second connector 312.
  • the first connector 311 is stacked on the side surface of the air intake member 310 away from the air jet disc 308, and the first connectors 311 are provided with spaced apart first inlets.
  • the air passage 031 and the second intake passage 032, and the respective outlet ends of the first intake passage 031 and the second intake passage 032 are connected to the respective intake ends of the first central passage 041 and the second central passage 043, respectively.
  • the intake ends of the first intake passage 031 and the second intake passage 032 are respectively located on two surfaces of the first connector 311 facing different directions.
  • the first intake passage 031 is provided on the circumferential side wall of the first connector 311, and the second intake passage 032 is provided on the upper end surface of the first connector 311. In this way, it can be easily connected with different gas pipelines.
  • the second air intake channel 032 is a plurality of straight through holes vertically penetrating the first connector 311, and the air intake member 310 has a plurality of straight through holes forming the second central channel 043 Set one by one.
  • an annular recess 042 is further provided on the surface of the air intake member 310 butted against the first connector 311, and the annular recess 042 is used for the air intake member 310 and the first connector 311 A buffer space is formed between them to ensure that the gas flow rate of the second intake passage 032 can meet the process requirements.
  • the second connecting piece 312 is superposed on the surface where the intake end of the second intake passage 032 of the first connecting piece 311 is located. Also, as shown in FIGS. 7A and 7B, a recess is provided on at least one of the two surfaces of the second connector 312 and the first connector 311 opposite to the second connector 312 and the first connector A mixing chamber 022 is formed between 311; and, a mixing channel 021 is also provided in the second connector 312, and the intake end of the mixing channel 021 is connected to a plurality of gas pipelines, which can pass in a variety of different gases for mixing The gas outlet of the channel 021 communicates with the mixing chamber 022.
  • the gas can be mixed in advance before entering the chamber, so that the gas mixing uniformity can be improved; at the same time, the buffer space formed by the annular recess 042 can also be used for secondary mixing. Thereby further improving the gas mixing uniformity.
  • a sealing ring is provided on the butting surface between the two components to achieve a sealed butt joint, for example, a sealing ring is provided between two surfaces of the second connector 312 and the first connector 311 opposite to each other .
  • the two separate intake paths in the chamber air intake structure are used to realize the independent delivery of the gas into the cavity 305, so as to prevent the gas from mixing and occurring before entering the chamber reaction.
  • the mixing chamber 022 and the gas mixing channel 021 in the second connecting member 312 can also be used to mix at least two gases that do not react in advance.
  • the chamber air intake structure has two mutually separate air intake paths, namely a first air intake path and a second air intake path, wherein the first air intake path is connected to the The two pipes 301 and 302 are connected; the second intake path is connected to the pipe 303 through the first connector 311.
  • the two gases in the two pipes 301 and 302 will not react, and can enter the mixing chamber 022 through the gas mixing channel 021 and be mixed in advance in the mixing chamber 022.
  • the second intake passage 032 in the first connecting piece 311 and the second central passage 043 in the intake member 310 in sequence, the buffer space formed by the annular recess 042 is entered, and secondary mixing can also be performed.
  • the mixed gas after the second mixing enters the fourth uniform flow chamber 314 through the third uniform flow chamber 313 and the uniform flow holes 3092 in the uniform flow plate 309 in sequence, and the first uniform flow is realized at this time; the fourth The mixed gas in the uniform flow chamber 314 then enters the cavity 305 through the first through holes 12 in the first plate 3081 and the second through holes 13 in the second plate 3082, at which time the second uniform flow. It can be seen from the above that since the mixed gas undergoes secondary mixing and secondary uniform flow before entering the chamber, the uniformity of the mixing and diffusion of the reactive gas above the workpiece to be processed can be effectively improved.
  • the pipeline 303 Since the pipeline 303 is used to pass gases that react with the two gases in the two pipelines 301 and 302, the second intake path and the first intake path are isolated from each other, which can ensure the gas in the pipeline 303 The gas in the two pipes 301, 302 will not mix before entering the chamber.
  • the gas in the pipeline 303 passes through the first intake passage 031 in the first connection piece 311, the first central passage 041 in the intake member 310, and the central connection hole in the uniform flow plate 309 in sequence 3091.
  • the central through hole 11 in the first plate 3081 enters the uniform flow channel 14 (ie, the first uniform flow cavity), and then enters the cavity 305 via the third through holes 16. Thereby, a uniform flow effect is achieved, ensuring the uniformity of the gas entering the chamber from the second intake path.
  • the chamber air intake structure provided by the embodiment of the present invention uses two isolated air intake paths in the jet disc assembly to realize the independent delivery of gas into the chamber, which can prevent the gas from mixing and entering before entering the chamber. Reaction occurs; at the same time, since the two air intake paths use central air intake, this can avoid the occurrence of gas distribution bias in the chamber, and the two air intake paths use the uniform flow cavity and the uniform gas channel to achieve uniform flow. It can ensure the uniformity of the gas entering the chamber from the two intake paths.
  • the structure of the air jet disk is simple and easy to process.
  • an embodiment of the present invention provides a reaction chamber, which includes a chamber 305, a chamber upper cover 304 disposed on the top of the chamber 305, and disposed within the chamber 305
  • the base 307 for carrying the workpiece 306 to be processed.
  • the base 307 is also provided with a pipeline for passing heated liquid and back-blowing gas.
  • the reaction chamber also includes vacuum system, vacuum measurement equipment and other related equipment.
  • the reaction chamber provided by the embodiment of the present invention further includes the chamber air intake structure as in any of the above embodiments.
  • the chamber air intake structure is provided on the chamber upper cover 304.
  • the reaction chamber provided by the embodiment of the present invention by adopting the above-mentioned chamber intake structure provided by the present invention, can not only avoid the occurrence of gas distribution bias in the chamber, but also improve the uniformity of gas distribution.
  • a fixed connection can be understood as: a detachable fixed connection (for example, using a bolt or screw connection), or It is understood as: a non-removable fixed connection (such as riveting and welding).
  • the fixed connection can also be replaced by an integrated structure (for example, manufactured by integral molding using a casting process) (except that it is obviously impossible to use an integrated molding process).
  • any component provided by the present invention may be assembled from a plurality of separate components, or may be a separate component manufactured by an integral molding process.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一种腔室进气结构以及反应腔室，该腔室进气结构包括喷气盘组件，该喷气盘组件包括喷气表面（A）；喷气盘组件中设置有第一中心通道(041)和设置在第一中心通道（041）周围且与之相互隔离的第二中心通道(043)、相互隔离的第一匀流通道和第二匀流通道、以及相互隔离的第一匀流腔和第二匀流腔，第一匀流通道的进气端通过第一匀流腔与第一中心通道(041)的出气端连接，第一匀流通道的出气端为多个，且均匀分布在喷气表面(A)上；第二匀流通道的进气端通过第二匀流腔与第二中心通道（043）的出气端连接，第二匀流通道的出气端为多个，且均匀分布在喷气表面（A）上。该腔室进气结构能够避免气体在进入腔室前混合并发生反应，同时避免发生腔室中的气体分布偏置，而且可以保证气体均匀性。

Description

腔室进气结构以及反应腔室 技术领域
本发明涉及半导体制造技术领域，尤其涉及一种腔室进气结构以及反应腔室。
背景技术
目前，集成电路的制造仍然使用诸如硅或者多晶硅等的硅基材料，放置在空气中的硅(或者多晶硅)的表面会自然氧化一层致密的SiO 2层，对于有些工艺来说，例如金属硅化物(Silicide)、金属NiPt等，薄膜要与硅衬底直接接触，如果衬底表面有一层SiO 2会增加薄膜的电阻率，从而影响器件性能。为此，在进行后续工艺之前，需要去除这层SiO 2。
但是，在去除SiO 2层的同时必须保护其它薄膜/结构不能被去除或者损伤。目前，集成电路业界常用干法去除SiO 2。干法去除SiO 2通常需要无水甲醇、HF气体、NH 3等的反应气体经过管路通入腔室内，反应气体在腔室内混合反应，并在晶片表面进行刻蚀，以去除SiO 2。
现有的反应腔室在实际应用中往往存在以下缺陷：由于反应气体过早混合并发生反应，导致反应所生成的固态生成物NH 3HF很容易堵塞阀体和管路，从而对于设备维护周期和维护成本产生不利影响。此外，现有的腔室进气结构存在气体分布容易偏置、气体扩散不均匀和结构复杂等的缺点。
发明内容
有鉴于此，本发明实施例提供一种腔室进气结构以及反应腔室。
根据本发明实施例的一个方面，提供了一种腔室进气结构，包括喷气盘组件，所述喷气盘组件包括喷气表面；并且，所述喷气盘组件中设置有第一中心通道和设置在所述第一中心通道周围且与之相互隔离的第二中心通道、 相互隔离的第一匀流通道和第二匀流通道，以及相互隔离的第一匀流腔和第二匀流腔，其中，
所述第一匀流通道的进气端通过所述第一匀流腔与所述第一中心通道的出气端连接，所述第一匀流通道的出气端为多个，且均匀分布在所述喷气表面上；
所述第二匀流通道的进气端通过所述第二匀流腔与所述第二中心通道的出气端连接，所述第二匀流通道的出气端为多个，且均匀分布在所述喷气表面上。
可选的，所述喷气盘组件包括：
进气部件，设置在腔室上盖上，且所述第一中心通道和所述第二中心通道均设置在所述进气部件中，并且所述进气部件包括出气表面和设置在所述出气表面上的第一中心凸台，所述第一中心通道的出气端位于所述第一中心凸台的台面上，所述第二中心通道的出气端位于所述出气表面上；
喷气盘，与所述腔室上盖间隔构成所述第二匀流腔，且所述喷气盘与所述第一中心凸台的台面密封对接。
可选的，所述喷气盘包括相互叠置的第一板体和第二板体；其中，
所述第一板体与所述腔室上盖间隔构成所述第二匀流腔，且所述第一板体与所述第一中心凸台的台面密封对接，并且所述第一板体中设置有中心通孔和多个第一通孔，所述中心通孔的两端分别与所述第一中心通道和所述第一匀流腔连通；所述第二板体位于所述第一板体的远离所述腔室上盖的一侧，且所述第二板体中设置有多个第二通孔，所述第二通孔的数量和所述第一通孔的数量相同，且一一对应地设置，所述第一通孔和与之对应的所述第二通孔构成所述第二匀流通道；
所述第一板体和所述第二板体相对的两个表面中的至少一个表面上设置有匀流凹道，用以在所述第一板体和所述第二板体之间构成所述第一匀流 腔；并且，所述第二板体的远离所述第一板体一侧的表面为所述喷气表面，且所述第二板体中设置有多个用作所述第一匀流通道的第三通孔，所述第三通孔的一端与所述匀流凹道连通，另一端位于所述喷气表面上。
可选的，所述第一板体和所述第二板体相对的两个表面中的至少一个表面上设置有多个同心的环状凸台，且在各相邻的两个所述环状凸台之间形成环状凹槽；并且，各所述环状凸台包括沿其周向间隔排布的多个子凸台，各相邻的两个子凸台之间的子凹槽和相邻的所述环状凹槽连通构成所述匀流凹道；
各所述第二通孔对应各所述环状凸台设置；各所述第三通孔对应各所述环状凹槽设置。
可选的，各所述子凹槽和与之相邻的所述子凹槽沿所述第二板体的径向排列，以构成呈中心放射状的多条径向凹道。
可选的，与同一所述环状凸台对应的所述第二通孔沿所述环状凸台的周向均匀分布；与同一所述环状凹槽对应的所述第三通孔沿所述环状凹槽的周向均匀分布。
可选的，所述腔室进气结构还包括匀流板，所述匀流板设置在所述腔室上盖与所述喷气盘之间，并且与所述第一中心凸台的台面密封对接；
所述匀流板与所述喷气盘间隔设置，将所述第二匀流腔分隔为第三匀流腔和第四匀流腔，所述第二匀流通道连通所述第三匀流腔，且所述匀流板的与所述喷气盘相对的表面上设置有第二中心凸台，所述第二中心凸台与所述喷气盘密封对接，且所述匀流板中设置有中心连接孔和多个匀流孔；其中，所述中心连接孔的进气端与所述第一中心通道的出气端连通，所述中心连接孔的出气端位于所述第二中心凸台的台面上，且与所述第一匀流腔连通；各所述匀流孔的两端分别与所述第三匀流腔和所述第四匀流腔连通。
可选的，各所述匀流孔与所述第二匀流通道的进气端相互交错。
可选的，所述腔室进气结构还包括连接件装置，所述连接件装置包括第一连接件，所述第一连接件叠置在所述进气部件的远离所述喷气盘的一侧表面上，且在所述第一连接件中设置有相互间隔的第一进气通道和第二进气通道，并且所述第一进气通道和第二进气通道各自的出气端分别与所述第一中心通道和所述第二中心通道各自的进气端连接；所述第一进气通道和第二进气通道各自的进气端分别位于所述第一连接件的朝向不同的两个表面上。
可选的，所述腔室进气结构还包括第二连接件，所述第二连接件叠置在所述第一连接件的所述第二进气通道的进气端所在的表面上；并且在所述第二连接件和所述第一连接件相对的两个表面中的至少一个表面上设置有凹部，以在所述第二连接件和所述第一连接件之间构成混合腔；
所述第二连接件中还设置有混合通道，所述混合通道的进气端与多个气体管路连接，所述混合通道的出气端与所述混合腔连通。
作为另一个技术方案，本发明还提供一种反应腔室，包括：腔体和设置在所述腔体顶部的腔室上盖，所述腔室上盖上设置有如本发明提供的上述腔室进气结构。
本发明提供的腔室进气结构，其利用喷气盘组件中两条隔离的进气路径来实现将气体独立输送至腔室内，能够避免气体在进入腔室前混合并发生反应；同时，由于两条进气路径均采用中心进气，这可以避免发生腔室中的气体分布偏置，而且两条进气路径均借助匀流腔和匀气通道来实现匀流，可以保证自两条进气路径进入腔室中的气体均匀性。此外，喷气盘的结构简单，且易于加工。
本发明提供的反应腔室，其通过采用本发明提供的上述腔室进气结构，不仅可以避免发生腔室中的气体分布偏置，而且可以提高气体分布均匀性。
本发明实施例附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其它的附图：
图1为根据本发明实施例提供的腔室进气结构的一个实施例的结构示意图；
图2为根据本发明实施例提供的腔室进气结构的一个实施例的I部分的局部放大示意图；
图3为根据本发明实施例提供的腔室进气结构的一个实施例的喷气盘的主视示意图；
图4为根据本发明实施例提供的腔室进气结构的一个实施例的喷气盘的第二板体的俯视示意图；
图5为根据本发明实施例提供的腔室进气结构的一个实施例的喷气盘的第一板体的俯视示意图；
图6A、6B、6C分别为根据本发明实施例提供的腔室进气结构的一个实施例的匀流板的俯视、侧视、仰视示意图；
图7A、7B分别为根据本发明实施例提供的腔室进气结构的一个实施例的进气部件的仰视、A-A剖视示意图；
图8A、8B、8C分别为根据本发明实施例提供的腔室进气结构的一个实施例的第一连接件的俯视、A-A剖视、仰视示意图；
图9A、9B、9C分别为根据本发明实施例提供的腔室进气结构的一个实施例的第二连接件的俯视、A-A剖视、仰视示意图。
具体实施方式
下面参照附图对本发明进行更全面的描述，其中说明本发明的示例性实施例。下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。下面结合图和实施例对本发明的技术方案进行多方面的描述。
下文为了叙述方便，下文中所称的“左”、“右”、“上”、“下”与附图本身的左、右、上、下方向一致。下文中的“第一”、“第二”等，仅用于描述上相区别，并没有其它特殊的含义。
如图1所示，本发明实施例提供一种反应腔室，其包括腔体305和设置在该腔体305顶部的腔室上盖304，及设置在腔体305内用于承载被加工工件306的基座307。基座307中还设置有用于通入加热液体和背吹气体的管路。另外，反应腔室还包括真空系统、真空测量设备等相关设备。
请一并参阅图1至图9C，本发明还提供一种腔室进气结构，该腔室进气结构设置在腔室上盖304上，且位于该腔室上盖304的下方。在本实施例中，腔室进气结构包括喷气盘组件，该喷气盘组件包括连接件装置、进气部件310、匀流板309和喷气盘308。
其中，进气部件310设置在腔室上盖304上，具体地，在腔室上盖304中设置有沿竖直方向贯通的通孔，进气部件310安装在该通孔中。并且，进气部件310中设置有第一中心通道041和第二中心通道043，如图9B和图9C所示，第一中心通道041为竖直贯通进气部件310的直通孔，该直通孔的轴线与腔室上盖304的轴线相重合，以实现中心进气，避免发生腔室中的气体分布偏置。第二中心通道043环绕在第一中心通道041周围，且与之相互隔离。如图9C所示，第二中心通道043包括多个竖直贯通进气部件310的直通孔，且围绕第一中心通道041对称分布。由于第二中心通道043环绕在 第一中心通道041周围，且环绕的中心与腔室上盖304的轴线相重合，这同样可以实现中心进气，避免发生腔室中的气体分布偏置。当然，在实际应用中，第二中心通道043还可以采用闭合的环形通孔。
如图9B所示，进气部件310包括出气表面B和设置在该出气表面B上的第一中心凸台3101，第一中心通道041的出气端位于第一中心凸台3101的台面C上；第二中心通道043的出气端位于出气表面B上。喷气盘308与腔室上盖304间隔设置，二者之间形成第二匀流腔，匀流板309设置在腔室上盖304与喷气盘308之间，将第二匀流腔分隔成第三匀流腔313和第四匀流腔314。第二中心通道043的出气端与该第三匀流腔313相连通。
而且，匀流板309与第一中心凸台3101的台面C密封对接，换言之，第一中心凸台3101穿过第三匀流腔313，并与匀流板309密封对接，从而使位于台面C上的第一中心通道041的出气端能够与第三匀流腔313相隔离，从而保证第一中心通道041中气体不会与第三匀流腔313中的气体混合。
在一个实施例中，如图3至图5所示，喷气盘308包括相互叠置的第一板体3081和第二板体3082。第一板体3081和第二板体3082固定连接，例如可以采用焊接等连接方式。其中，匀流板309与第一板体3081间形成第四匀流腔314，并且，如图5所示，第一板体3081中设置有竖直贯通第一板体3081的中心通孔11和多个第一通孔12，其中，中心通孔11的轴线与第一板体3081的轴线重合；多个第一通孔12相对于第一板体3081所在平面均匀分布。
在一个实施例中，匀流板309的与第一板体3081相对的表面上设置有第二中心凸台，该第二中心凸台与第一板体3081密封对接，换言之，第二中心凸台穿过第四匀流腔314，并与第一板体3081密封对接。并且，如图2、图6A和图6C所示，匀流板309中设置有中心连接孔3091和多个匀流孔3092；其中，中心连接孔3091的进气端与第一中心通道041的出气端连通， 中心连接孔3091的出气端位于第二中心凸台的台面上，且与中心通孔11连通，由于第二中心凸台与第一板体3081密封对接，从而可以保证中心通孔11和中心连接孔3091均与第四匀流腔314相隔离。各匀流孔3092的两端分别与第三匀流腔313和第四匀流腔314连通。
在一个实施例中，如图6B所示，匀流板309的边缘设置有分别朝上和朝下凸出的凸边3093，用以实现匀流板309分别与腔室上盖304和喷气盘308间隔设置，以构成第三匀流腔313和第四匀流腔314。
需要说明的是，在实际应用中，也可以不设置上述匀流板309，在这种情况下，可以使喷气盘308与腔室上盖304间隔构成上述第二匀流腔，且喷气盘308与第一中心凸台3101的台面C密封对接。
在一个实施例中，如图3和图4所示，第二板体3082位于第一板体3081的远离腔室上盖304的一侧，且第二板体3082中设置有多个第二通孔13，第二通孔13的数量和第一通孔12的数量相同，且一一对应地设置，第一通孔12和与之对应的第二通孔13构成第二匀流通道。
而且，第一板体3081和第二板体3082相对的两个表面中的至少一个表面上设置有匀流凹道14，用以在第一板体3081和第二板体3082之间构成第一匀流腔，例如，该匀流凹道14设置在第二板体3082上，用以与第一板体3081的下表面构成封闭的第一匀流腔。并且，第二板体3082的远离第一板体3081一侧的表面为喷气表面A，该喷气表面A暴露在腔体305内的工艺空间中。并且，第二板体3082中设置有多个第三通孔16，该第三通孔16的一端与匀流凹道14连通，另一端位于喷气表面A上。第三通孔16用作第一匀流通道，用以将气体输送至腔体305内的工艺空间中。可选的，多个第三通孔16的出气端在喷气表面A上均匀分布，从而能够均匀地将气体输送至腔体305内。
在一个实施例中，如图4所示，第二板体3082的与第一板体3081相对 的表面上设置有多个同心的环状凸台15，且在各相邻的两个环状凸台15之间形成环状凹槽；并且，各环状凸台15包括沿其周向间隔排布的多个子凸台151，各相邻的两个子凸台151之间的子凹槽152和相邻的环状凹槽连通构成上述匀流凹道14。并且，各第二通孔13对应各环状凸台15设置；各第三通孔16对应各环状凹槽设置。这样设置，既可以实现第二通孔13和环状凹槽相互隔离，又可以使各环形凹槽通过各子凹槽152实现连通，构成匀流凹道14，还可以使第二通孔13的出气端和第三通孔16的出气端能够在喷气表面A的径向上交错设置，从而更有利于自第二通孔13的出气端和第三通孔16的出气端喷出的两种气体的混合，进而提高气体混合均匀性。
在一个实施例中，如图4所示，各子凹槽152和与之相邻的子凹槽152沿第二板体3082的径向排列，以构成呈中心放射状的多条径向凹道，从而实现径向上不同半径圆周上的环状凹槽的相互连通。
可选的，与同一环状凸台15对应的第二通孔13沿环状凸台15的周向均匀分布；与同一环状凹槽对应的第三通孔16沿环状凹槽的周向均匀分布。这可以提高在喷气表面A的圆周方向上的分布均匀性。
在实际应用中，根据均匀性要求，一般位于内圈的环状凸台15上设置的第二通孔13的数量少于位于外圈的环状凸台15上设置的第二通孔13的数量。
在实际应用中，第一板体3081中的中心通孔11的直径大于第一通孔12的直径，以保证中心进气的流量满足要求。另外，第一通孔12和第二通孔13的直径相同。另外，各匀流板309中的匀流孔3092与第一板体3081中的第一通孔12相互交错，以提高气体在第四匀流腔314中的扩散程度。
在一个实施例中，如图7A至图9C所示，连接件装置可以有多种结构。例如，连接件装置包括：第一连接件311和第二连接件312。其中，如图8A和图8B所示，第一连接件311叠置在进气部件310的远离喷气盘308的一 侧表面上，且在第一连接件311中设置有相互间隔的第一进气通道031和第二进气通道032，并且第一进气通道031和第二进气通道032各自的出气端分别与第一中心通道041和第二中心通道043各自的进气端连接。而且，第一进气通道031和第二进气通道032各自的进气端分别位于第一连接件311的朝向不同的两个表面上。如图2所示，第一进气通道031设置在第一连接件311的周向侧壁上，而第二进气通道032设置在第一连接件311的上端面上。这样，可以便于与不同的气体管路连接。
在一个实施例中，如图8A所示，第二进气通道032为多个竖直贯通第一连接件311的直通孔，且进气部件310上构成第二中心通道043的多个直通孔一一对应地设置。可选的，如图9B所示，在进气部件310的与第一连接件311对接的表面上还设置有环形凹部042，该环形凹部042用于在进气部件310与第一连接件311之间形成缓冲空间，以保证第二进气通道032的气体流量能够满足工艺要求。
第二连接件312叠置在第一连接件311的第二进气通道032的进气端所在的表面上。并且，如图7A和图7B所示，在第二连接件312和第一连接件311相对的两个表面中的至少一个表面上设置有凹部，以在第二连接件312和第一连接件311之间构成混合腔022；并且，第二连接件312中还设置有混合通道021，该混合通道021的进气端与多个气体管路连接，可以通入是多种不同的气体，混合通道021的出气端与混合腔022连通。借助上述混合腔022和混气通道021，可以在进入腔室之前提前对气体进行混合，从而可以提高气体混合均匀性；同时，借助上述环形凹部042构成的缓冲空间，还可以进行二次混合，从而进一步提高气体混合均匀性。
在实际应用中，在两个部件之间的对接面上均设置有密封圈以实现密封对接，例如，在第二连接件312和第一连接件311相对的两个表面之间设置有密封圈。
在需要向腔体305内通入反应气体时，利用腔室进气结构中两条隔离的进气路径来实现将气体独立输送至腔体305内，以避免气体在进入腔室前混合并发生反应。同时，还可以利用上述第二连接件312中的混合腔022和混气通道021对不发生反应的至少两种气体提前进行混合。
在一个实施例中，腔室进气结构中具有两条相互隔离的进气路径，分别为第一进气路径和第二进气路径，其中，第一进气路径通过第二连接件312与两条管路301、302连接；第二进气路径通过第一连接件311与管路303连接。具体来说，对于第一进气路径，两条管路301、302中的两种气体不会发生反应，可经由混气通道021进入混合腔022中，并在混合腔022中提前进行混合，然后依次经由第一连接件311中的第二进气通道032和进气部件310中的第二中心通道043进入上述环形凹部042构成的缓冲空间，还可以进行二次混合。之后，二次混合后的混合气体再依次经由第三匀流腔313和匀流板309中的各匀流孔3092进入第四匀流腔314，此时实现了第一次匀流；第四匀流腔314中的混合气体再经由第一板体3081中的各第一通孔12和第二板体3082中的第二通孔13进入腔体305内，此时实现了第二次匀流。由上可知，由于混合气体在进入腔室之前进行了二次混合和二次匀流，可以有效提高反应气体的在被加工工件上方混合和扩散均匀性。
由于管路303用于通入与两条管路301、302中的两种气体会发生反应的气体，所以第二进气路径与第一进气路径相互隔离，可以保证管路303中的气体与两条管路301、302中的气体在进入腔室之前不会混合。对于第二进气路径，管路303中的气体依次经由第一连接件311中的第一进气通道031、进气部件310中的第一中心通道041、匀流板309中的中心连接孔3091、第一板体3081中的中心通孔11进入匀流凹道14(即，第一匀流腔)，然后在经由各第三通孔16进入腔体305内。由此，实现了匀流作用，保证自第二进气路径进入腔室中的气体均匀性。
综上所述，本发明实施例提供的腔室进气结构，其利用喷气盘组件中两条隔离的进气路径来实现将气体独立输送至腔室内，能够避免气体在进入腔室前混合并发生反应；同时，由于两条进气路径均采用中心进气，这可以避免发生腔室中的气体分布偏置，而且两条进气路径均借助匀流腔和匀气通道来实现匀流，可以保证自两条进气路径进入腔室中的气体均匀性。此外，喷气盘的结构简单，且易于加工。
在一个实施例中，如图1所示，本发明实施例提供一种反应腔室，其包括腔体305和设置在该腔体305顶部的腔室上盖304，及设置在腔体305内用于承载被加工工件306的基座307。基座307中还设置有用于通入加热液体和背吹气体的管路。另外，反应腔室还包括真空系统、真空测量设备等相关设备。
本发明实施例提供的反应腔室，其还包括如上任一实施例中的腔室进气结构。该腔室进气结构设置在腔室上盖304上。
本发明实施例提供的反应腔室，其通过采用本发明提供的上述腔室进气结构，不仅可以避免发生腔室中的气体分布偏置，而且可以提高气体分布均匀性。
上述本发明所公开的任一技术方案除另有声明外，如果其公开了数值范围，那么公开的数值范围均为优选的数值范围，任何本领域的技术人员应该理解：优选的数值范围仅仅是诸多可实施的数值中技术效果比较明显或具有代表性的数值。由于数值较多，无法穷举，所以本发明才公开部分数值以举例说明本发明的技术方案，并且，上述列举的数值不应构成对本发明创造保护范围的限制。
同时，上述本发明如果公开或涉及了互相固定连接的零部件或结构件，那么，除另有声明外，固定连接可以理解为：能够拆卸地固定连接(例如使用螺栓或螺钉连接)，也可以理解为：不可拆卸的固定连接(例如铆接、焊接)， 当然，互相固定连接也可以为一体式结构(例如使用铸造工艺一体成形制造出来)所取代(明显无法采用一体成形工艺除外)。
另外，上述本发明公开的任一技术方案中所应用的用于表示位置关系或形状的术语除另有声明外其含义包括与其近似、类似或接近的状态或形状。本发明提供的任一部件既可以是由多个单独的组成部分组装而成，也可以为一体成形工艺制造出来的单独部件。
以上实施例仅用以说明本发明的技术方案而非对其限制；尽管参照较佳实施例对本发明进行了详细的说明，所属领域的普通技术人员应当理解：依然可以对本发明的具体实施方式进行修改或者对部分技术特征进行等同替换；而不脱离本发明技术方案的精神，其均应涵盖在本发明请求保护的技术方案范围当中。
本发明的描述是为了示例和描述起见而给出的，而并不是无遗漏的或者将本发明限于所公开的形式。很多修改和变化对于本领域的普通技术人员而言是显然的。选择和描述实施例是为了更好说明本发明的原理和实际应用，并且使本领域的普通技术人员能够理解本发明从而设计适于特定用途的带有各种修改的各种实施例。

Claims (11)

  1. 一种腔室进气结构，其特征在于，包括喷气盘组件，所述喷气盘组件包括喷气表面；并且，所述喷气盘组件中设置有第一中心通道和设置在所述第一中心通道周围且与之相互隔离的第二中心通道、相互隔离的第一匀流通道和第二匀流通道，以及相互隔离的第一匀流腔和第二匀流腔，其中，
    所述第一匀流通道的进气端通过所述第一匀流腔与所述第一中心通道的出气端连接，所述第一匀流通道的出气端为多个，且均匀分布在所述喷气表面上；
    所述第二匀流通道的进气端通过所述第二匀流腔与所述第二中心通道的出气端连接，所述第二匀流通道的出气端为多个，且均匀分布在所述喷气表面上。
  2. 如权利要求1所述的腔室进气结构，其特征在于，所述喷气盘组件包括：
    进气部件，设置在腔室上盖上，且所述第一中心通道和所述第二中心通道均设置在所述进气部件中，并且所述进气部件包括出气表面和设置在所述出气表面上的第一中心凸台，所述第一中心通道的出气端位于所述第一中心凸台的台面上，所述第二中心通道的出气端位于所述出气表面上；
    喷气盘，与所述腔室上盖间隔构成所述第二匀流腔，且所述喷气盘与所述第一中心凸台的台面密封对接。
  3. 如权利要求2所述的腔室进气结构，其特征在于，所述喷气盘包括相互叠置的第一板体和第二板体；其中，
    所述第一板体与所述腔室上盖间隔构成所述第二匀流腔，且所述第一板体与所述第一中心凸台的台面密封对接，并且所述第一板体中设置有中心通孔和多个第一通孔，所述中心通孔的两端分别与所述第一中心通道和所述第 一匀流腔连通；所述第二板体位于所述第一板体的远离所述腔室上盖的一侧，且所述第二板体中设置有多个第二通孔，所述第二通孔的数量和所述第一通孔的数量相同，且一一对应地设置，所述第一通孔和与之对应的所述第二通孔构成所述第二匀流通道；
    所述第一板体和所述第二板体相对的两个表面中的至少一个表面上设置有匀流凹道，用以在所述第一板体和所述第二板体之间构成所述第一匀流腔；并且，所述第二板体的远离所述第一板体一侧的表面为所述喷气表面，且所述第二板体中设置有多个用作所述第一匀流通道的第三通孔，所述第三通孔的一端与所述匀流凹道连通，另一端位于所述喷气表面上。
  4. 如权利要求3所述的腔室进气结构，其特征在于，所述第一板体和所述第二板体相对的两个表面中的至少一个表面上设置有多个同心的环状凸台，且在各相邻的两个所述环状凸台之间形成环状凹槽；并且，各所述环状凸台包括沿其周向间隔排布的多个子凸台，各相邻的两个子凸台之间的子凹槽和相邻的所述环状凹槽连通构成所述匀流凹道；
    各所述第二通孔对应各所述环状凸台设置；各所述第三通孔对应各所述环状凹槽设置。
  5. 如权利要求4所述的腔室进气结构，其特征在于，各所述子凹槽和与之相邻的所述子凹槽沿所述第二板体的径向排列，以构成呈中心放射状的多条径向凹道。
  6. 如权利要求4所述的腔室进气结构，其特征在于，与同一所述环状凸台对应的所述第二通孔沿所述环状凸台的周向均匀分布；与同一所述环状凹槽对应的所述第三通孔沿所述环状凹槽的周向均匀分布。
  7. 如权利要求2-5任意一项所述的腔室进气结构，其特征在于，所述 腔室进气结构还包括匀流板，所述匀流板设置在所述腔室上盖与所述喷气盘之间，并且与所述第一中心凸台的台面密封对接；
    所述匀流板与所述喷气盘间隔设置，将所述第二匀流腔分隔为第三匀流腔和第四匀流腔，所述第二匀流通道连通所述第三匀流腔，且所述匀流板的与所述喷气盘相对的表面上设置有第二中心凸台，所述第二中心凸台与所述喷气盘密封对接，且所述匀流板中设置有中心连接孔和多个匀流孔；其中，所述中心连接孔的进气端与所述第一中心通道的出气端连通，所述中心连接孔的出气端位于所述第二中心凸台的台面上，且与所述第一匀流腔连通；各所述匀流孔的两端分别与所述第三匀流腔和所述第四匀流腔连通。
  8. 如权利要求7所述的腔室进气结构，其特征在于，各所述匀流孔与所述第二匀流通道的进气端相互交错。
  9. 如权利要求2-5任意一项所述的腔室进气结构，其特征在于，所述腔室进气结构还包括连接件装置，所述连接件装置包括第一连接件，所述第一连接件叠置在所述进气部件的远离所述喷气盘的一侧表面上，且在所述第一连接件中设置有相互间隔的第一进气通道和第二进气通道，并且所述第一进气通道和第二进气通道各自的出气端分别与所述第一中心通道和所述第二中心通道各自的进气端连接；所述第一进气通道和第二进气通道各自的进气端分别位于所述第一连接件的朝向不同的两个表面上。
  10. 如权利要求9所述的腔室进气结构，其特征在于，所述腔室进气结构还包括第二连接件，所述第二连接件叠置在所述第一连接件的所述第二进气通道的进气端所在的表面上；并且在所述第二连接件和所述第一连接件相对的两个表面中的至少一个表面上设置有凹部，以在所述第二连接件和所述第一连接件之间构成混合腔；
    所述第二连接件中还设置有混合通道，所述混合通道的进气端与多个气 体管路连接，所述混合通道的出气端与所述混合腔连通。
  11. 一种反应腔室，其特征在于，包括：腔体和设置在所述腔体顶部的腔室上盖，所述腔室上盖上设置有如权利要求1至10任一项所述的腔室进气结构。
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112458441A (zh) * 2020-10-22 2021-03-09 北京北方华创微电子装备有限公司 半导体工艺设备的反应腔室及半导体工艺设备
CN113430502A (zh) * 2021-06-18 2021-09-24 北京北方华创微电子装备有限公司 半导体工艺设备及其混合进气装置
CN113488415A (zh) * 2021-07-06 2021-10-08 华海清科股份有限公司 晶圆后处理设备及其应用的具有匀流功能的通风系统
CN115692157A (zh) * 2022-11-07 2023-02-03 拓荆科技股份有限公司 半导体设备进料块结构及进气装置
CN117213932A (zh) * 2023-11-09 2023-12-12 南京浦蓝大气环境研究院有限公司 一种用于室外大气检测的均匀采气设备
CN117604499A (zh) * 2023-11-13 2024-02-27 浙江大学绍兴研究院 一种半导体设备用分体式气体喷淋组件
WO2024088171A1 (zh) * 2022-10-25 2024-05-02 苏州卓兆点胶股份有限公司 压盘式供胶设备
CN119920671A (zh) * 2023-10-30 2025-05-02 北京北方华创微电子装备有限公司 半导体工艺腔室及其进气组件

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113441032B (zh) * 2021-06-25 2022-09-16 北京北方华创微电子装备有限公司 半导体工艺设备及其气体输送装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345184A (zh) * 2008-08-22 2009-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备、气体分配装置以及气体输送方法
CN102424956A (zh) * 2011-12-02 2012-04-25 彭继忠 用于金属有机化合物化学气相沉积设备的喷淋装置
JP2017212357A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理方法
CN109637952A (zh) * 2018-12-18 2019-04-16 北京北方华创微电子装备有限公司 腔室进气结构以及反应腔室
CN209298073U (zh) * 2018-12-18 2019-08-23 北京北方华创微电子装备有限公司 腔室进气结构以及反应腔室

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4717179B2 (ja) * 2000-06-21 2011-07-06 日本電気株式会社 ガス供給装置及び処理装置
WO2004049413A1 (en) * 2002-11-25 2004-06-10 Ips Ltd. Apparatus for depositing thin film on wafer
KR100509231B1 (ko) * 2003-01-03 2005-08-22 주식회사 아이피에스 박막증착용 반응용기
US20060162661A1 (en) * 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US10714315B2 (en) * 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
TWI582823B (zh) * 2015-11-17 2017-05-11 弘潔科技股份有限公司 一種用於電漿反應室之氣體分散板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345184A (zh) * 2008-08-22 2009-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备、气体分配装置以及气体输送方法
CN102424956A (zh) * 2011-12-02 2012-04-25 彭继忠 用于金属有机化合物化学气相沉积设备的喷淋装置
JP2017212357A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理方法
CN109637952A (zh) * 2018-12-18 2019-04-16 北京北方华创微电子装备有限公司 腔室进气结构以及反应腔室
CN209298073U (zh) * 2018-12-18 2019-08-23 北京北方华创微电子装备有限公司 腔室进气结构以及反应腔室

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112458441A (zh) * 2020-10-22 2021-03-09 北京北方华创微电子装备有限公司 半导体工艺设备的反应腔室及半导体工艺设备
CN112458441B (zh) * 2020-10-22 2022-09-16 北京北方华创微电子装备有限公司 半导体工艺设备的反应腔室及半导体工艺设备
CN113430502A (zh) * 2021-06-18 2021-09-24 北京北方华创微电子装备有限公司 半导体工艺设备及其混合进气装置
US12264393B2 (en) 2021-06-18 2025-04-01 Beijing Naura Microelectronics Equipment Co., Ltd. Semiconductor processing apparatus and mixing inlet device
CN113488415A (zh) * 2021-07-06 2021-10-08 华海清科股份有限公司 晶圆后处理设备及其应用的具有匀流功能的通风系统
WO2024088171A1 (zh) * 2022-10-25 2024-05-02 苏州卓兆点胶股份有限公司 压盘式供胶设备
CN115692157A (zh) * 2022-11-07 2023-02-03 拓荆科技股份有限公司 半导体设备进料块结构及进气装置
CN119920671A (zh) * 2023-10-30 2025-05-02 北京北方华创微电子装备有限公司 半导体工艺腔室及其进气组件
CN117213932A (zh) * 2023-11-09 2023-12-12 南京浦蓝大气环境研究院有限公司 一种用于室外大气检测的均匀采气设备
CN117213932B (zh) * 2023-11-09 2024-01-19 南京浦蓝大气环境研究院有限公司 一种用于室外大气检测的均匀采气设备
CN117604499A (zh) * 2023-11-13 2024-02-27 浙江大学绍兴研究院 一种半导体设备用分体式气体喷淋组件

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