WO2020125324A1 - 一种具有高效能谐振腔的红外探测器及其制备方法 - Google Patents

一种具有高效能谐振腔的红外探测器及其制备方法 Download PDF

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WO2020125324A1
WO2020125324A1 PCT/CN2019/120448 CN2019120448W WO2020125324A1 WO 2020125324 A1 WO2020125324 A1 WO 2020125324A1 CN 2019120448 W CN2019120448 W CN 2019120448W WO 2020125324 A1 WO2020125324 A1 WO 2020125324A1
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reflective layer
resonant cavity
metal
substrate
film
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PCT/CN2019/120448
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English (en)
French (fr)
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刘卫国
王卓曼
刘欢
韩军
周顺
解潇潇
安妍
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西安工业大学
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Publication of WO2020125324A1 publication Critical patent/WO2020125324A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures

Definitions

  • the invention belongs to the technical field of photoelectric detection, and in particular relates to an infrared detector with a high-efficiency resonant cavity and a preparation method thereof.
  • the infrared imaging system is a system that relies on the thermal radiation of the target and the background to generate a scene image. It can work 24 hours a day and can detect hidden hot targets through camouflage.
  • the infrared detector is the core component of the infrared imaging system, and can convert the incident infrared signal into an electrical signal output with the photoelectric effect and the thermoelectric effect.
  • the infrared signal received by the infrared sensitive film is weakened due to the inevitable absorption of infrared light during the penetration of the above material, which affects The detection efficiency of the detector. Therefore, there is an urgent need to design new absorption structures to further improve the utilization of infrared signals that penetrate the upper structure into the infrared detection structure.
  • the present invention provides an infrared detector with a high-efficiency resonant cavity and a preparation method thereof.
  • the upper surface of the resonant cavity is a transflective film on the back of other detection structures, and the lower surface of the resonant cavity is Total reflection film on the upper surface of the substrate where the integrated circuit is located.
  • the cavity height of the resonant cavity is only a few microns, the cavity space is greatly reduced, it is easier to form and maintain a higher vacuum, to avoid heat loss caused by air convection.
  • the sensitive layer in the resonant cavity is located in the middle of the resonant cavity.
  • the detector structure There are no materials in direct contact with the thin film of the sensitive layer except for the two supporting columns that lead out electrical signals, which reduces the heat loss caused by heat conduction and makes the incident infrared
  • the temperature rise caused by the signal is converted into electrical signal output as much as possible.
  • the light reflects back and forth in the resonant cavity, and can penetrate the sensitive layer film twice, thereby further improving the absorption rate of the infrared signal by the detector.
  • An infrared detector with a high-efficiency resonant cavity includes opposite upper substrate and lower substrate; the lower surface of the upper substrate is provided with an upper reflective layer, and the upper surface of the lower substrate is provided with a lower reflective layer;
  • the detection unit of the four corners of the lower surface of the substrate are sequentially provided A 1, B 1, C 1, and four points D 1, A 1, B 1, C 1 and D 1 are formed a first rectangular; lower surface of the substrate sequentially detecting unit is provided with the four corners a 2, B 2, C 2 and D 2 are four points, a 2, B 2, C 2, and D 2 form a second rectangle, the same size of the first rectangle and the second rectangle and The four points correspond.
  • a 1 and C 1 are provided with two protruding upper metal pillars, and A 2 and C 2 are provided with two protruding lower metal pillars; both the upper metal pillar and the lower metal pillar are perpendicular to the upper substrate and the lower substrate;
  • the upper reflective layer, the lower reflective layer, the upper metal pillar and the lower metal pillar constitute a resonance cavity;
  • a sensitive layer film parallel to the upper substrate and the lower substrate is fixedly arranged in the resonance cavity; There are gaps between the sensitive layer film and the upper reflective layer and between the sensitive layer film and the lower reflective layer; below the lower substrate is an integrated circuit for signal processing and storage of the detector.
  • two protruding support pillars are provided on B 2 and D 2 to jointly support the sensitive layer thin film; the sensitive layer thin film is located at an intermediate position between the upper substrate and the lower substrate; and the support pillar is made of conductive metal material.
  • the thickness of the sensitive layer film is 50-500 nm, and infrared heat sensitive material is selected.
  • the height of the resonant cavity is 1/4 of the operating wavelength of the infrared detector; when the detector is in operation, the interior of the resonant cavity is a vacuum.
  • both the upper substrate and the lower substrate are double-sided polished silicon wafers; the upper surface of the upper substrate is a material and structure transparent to infrared, and the lower surface is an upper reflective layer translucent to infrared.
  • the materials of both the upper reflective layer and the lower reflective layer are metals; the thickness of the upper reflective layer is 5-50 nm, and the thickness of the lower reflective layer is 100-1000 nm.
  • an upper chromium film is provided between the upper substrate and the upper reflective layer, and a lower chromium film is provided between the lower substrate and the lower reflective layer; the thickness of the upper chromium film is 0.1 of the thickness of the upper reflective layer; the lower chromium film is The thickness of the lower reflective layer is 0.1.
  • the integrated circuit is divided into two layers, which are a processing circuit and a memory circuit, where the processing circuit is in contact with the lower surface of the lower substrate.
  • a method for preparing an infrared detector with a high-performance resonator includes the following steps:
  • Step 1 Prepare the upper structure of the resonant cavity
  • Step 2 Prepare the lower structure of the resonant cavity
  • the lower chromium film and the lower reflective layer are deposited by electron beam evaporation.
  • the lower reflective layer is coated with photoresist, exposure, development, post-baking, wet etching, and photoresist removal.
  • Patterning of the reflective layer apply photoresist again on the upper surface of the lower reflective layer, expose, develop, and post-bake, then plate a conductive metal to remove the photoresist, forming two at the A 2 and C 2 of the lower reflective layer
  • the lower metal pillars form two support pillars at B 2 and D 2 ; the heights of the lower metal pillars and the support pillars are the same, and the heights are both 1/8 of the wavelength of the working center of the resonant cavity; Lower film structure of thin film, lower reflective layer, lower metal pillar and support pillar;
  • Step 3 Prepare the sensitive layer in the middle of the resonant cavity
  • the sacrificial layer is spin-coated on the lower reflective layer.
  • the thickness of the sacrificial layer is the same as the height of the lower metal pillar.
  • photolithography and etching holes are formed on the upper ends of the two support pillars, and a sensitive layer is deposited on the end surfaces of the sacrificial layer and the support pillars Thin film, the thickness of the sensitive layer film is 50-500nm, then the sensitive layer film is patterned to form a detection unit; plasma etching is used to remove the sacrificial layer, the two corners of the lower surface of the sensitive layer film are fixedly connected to the two support pillars, and the rest Partially suspended
  • Step 4 Bond the upper and lower pieces to form a resonant cavity
  • the resonant cavity is a cavity formed by the upper reflective layer, the lower reflective layer and the upper metal column and the lower metal column, and a sensitive layer film in the center of the resonant cavity is sensitive
  • the thin film is fixedly connected to the upper end of the support column.
  • the thickness of the second photoresist coating on the upper reflective layer is higher than the height of the upper metal pillar; in step 2, the thickness of the second photoresist coating on the lower reflective layer is higher than the lower metal pillar And the height of the support column.
  • the present invention has the following beneficial effects:
  • the invention discloses an infrared detector with a high-efficiency resonant cavity.
  • the structure in which the detector puts the resonant cavity inside a silicon chip can not only improve the device integration, but also greatly improve the infrared signal utilization rate.
  • the resonant cavity is located inside the device, and the sensitive layer film is located in the middle of the resonant cavity.
  • the gap between the sensitive layer film and the upper reflective layer and the lower reflective layer is evacuated after the device is packaged, which can avoid heat dissipation caused by air convection, and the resonance
  • the cavity height of the cavity is only a few microns, the cavity space is small, and it is easier to form and maintain a higher vacuum.
  • the metal layer on the back of the upper substrate is used as the upper reflective layer, and its thickness is thinner, which is a transflective film;
  • the metal layer on the upper surface of the lower substrate is used as the lower reflective layer, and its thicker thickness is the total reflective film;
  • Penetrate the transflective upper reflective layer enter the resonant cavity, pass the sensitive layer film, reach the lower reflective layer, and then totally reflect upward, and then pass through the sensitive layer film again, so that the light reflects back and forth in the resonant cavity, you can wear Passing the sensitive layer film twice in the middle increases the number of times the sensitive layer film is penetrated, thereby increasing the light absorption rate.
  • the sensitive layer film acts as the upper and lower reflecting surfaces of the resonator, respectively.
  • the light reflects back and forth in this structure, only reaching the surface of the sensitive layer film once, light utilization
  • the sensitive film in the traditional structure is coated with a reflective layer, the thermal mass is large, the same infrared signal is incident, the temperature rise and the resistance value change are small, resulting in low sensitivity of the detector.
  • the resonant cavity structure proposed by the present invention can avoid the above problems.
  • two supporting columns are provided in the resonant cavity to support the sensitive layer film, so that the sensitive layer film is stable and firm in the resonant cavity, and the upper and lower parts of the resonant cavity can be evacuated to reduce the heat loss of the sensitive film caused by air convection. .
  • the thickness of the thin film of the sensitive layer is 50-500 nm.
  • Infrared heat-sensitive materials are selected to function as a thermistor. As a bolometer, the smaller the mass volume, the better. The thickness of the film cannot be too thick. The thicker the film, the greater the thermal mass, which results in the absorption of the same infrared radiation, and the small temperature rise reduces the sensitivity of the detector; if the thickness of the film is too thin, it is difficult to be supported.
  • the heights of the upper metal column and the lower metal column are both 1/8 of the center wavelength of the working band of the resonant cavity, so the height of the resonant cavity is 1/4 of the working wavelength of the detector to form a resonant standing wave and enhance the light in the resonant cavity Absorption rate
  • the thickness of the upper reflective layer is limited to 5-50 nm, and the thickness of the lower reflective layer is limited to 100-1000 nm.
  • the upper reflective layer is a transflective metal film, and the lower reflective layer is a totally reflective metal film.
  • a chromium thin film is added between each substrate and the reflective metal layer to increase the adhesion between the silicon substrate and the reflective metal layer.
  • both the upper metal column and the lower metal column are made of conductive metal, and two pairs of metal columns are respectively bonded together to support the resonant cavity; the other two metal columns support the sensitive layer film to measure the resistance of the sensitive layer film due to absorption of infrared radiation
  • the value changes and is connected to the readout circuit below the detection structure, which converts the detected infrared radiation signal into an electrical signal, which is led to the integrated circuit on the back for signal processing.
  • the integrated circuit of the present invention is divided into a processing circuit and a storage circuit.
  • the processing circuit is used for calculations such as signal amplification processing, noise reduction processing, image generation, target recognition and matching, and the storage circuit is used for target feature library and image Storage of information.
  • the invention also discloses a method for preparing an infrared detector with a high-efficiency resonant cavity.
  • the method first separately prepares the upper structure and the lower structure, and then prepares the sacrificial layer on the lower plate, etches the contact hole, and deposits the sensitive film.
  • the sacrificial layer is removed; then the upper metal pillar and the lower metal pillar are correspondingly bonded to form an infrared detector with an optical resonant cavity.
  • the detector has a novel structure and a simple preparation process, and the detection efficiency of the infrared detector can be improved.
  • the thickness of the second photoresist coating in step 1 is higher than the height of the upper metal pillar
  • the thickness of the second photoresist coating in step 2 is higher than the height of the lower metal pillar and the support pillar, both are In order to facilitate the peeling of the resist.
  • Figure 1 is the overall structure diagram of the infrared absorption detector of the present invention.
  • FIG. 2 is a schematic cross-sectional view of the resonant cavity of the present invention.
  • FIG 3 is a plan view of the upper reflective layer and upper metal pillar of the present invention (A-A cross section);
  • FIG. 4 is a plan distribution diagram (C-C cross section) of the lower reflective layer, the lower metal pillar and the support pillar of the present invention
  • FIG. 5 is a plan view of the sensitive layer film of the present invention and the lower metal pillar and support pillar (B-B section);
  • FIG. 6 is a schematic diagram of the arrangement of the resonant cavity and the metal column of the present invention.
  • the present invention discloses an infrared detector with a high-performance resonant cavity and a preparation method thereof.
  • the infrared detector includes an upper substrate 1 and a lower substrate 5, and a lower surface of the upper substrate 1
  • the upper reflective layer 2 is provided, and the upper surface of the lower substrate 5 is provided with a lower reflective layer 4.
  • the upper reflective layer 2 and the lower reflective layer 4 of each detector unit have the same shape and size, and their materials are all metal, and the upper reflective layer 2
  • the thickness is 5-50nm, and an upper chromium film 12 is provided between the upper substrate 1 and the upper reflective layer 2, the thickness of the upper chromium film 12 is 1/10 of the thickness of the upper reflective layer 2; the thickness of the lower reflective layer 4 is 100nm -1000 nm, a lower chromium thin film 13 is provided between the lower substrate 5 and the lower reflective layer 4, and the thickness of the lower chromium thin film 13 is 1/10 of the thickness of the lower reflective layer 4.
  • each detection unit of the lower surface of the upper substrate 1 is provided with four points A 1 , B 1 , C 1 and D 1 in sequence, A 1 , B 1 , C 1 and D 1.
  • a 1 , B 1 , C 1 and D 1 Form a first rectangle; referring to the CC cross section shown in FIG.
  • the four corners of the upper surface detection unit of the lower substrate 5 are sequentially provided with four points A 2 , B 2 , C 2 and D 2 , A 2 , B 2 , C 2, and D 2 form a second rectangular, same as the first rectangle and the second rectangle of size and position corresponding to the four points, namely: a 1 and a 2 correspond, B 1 and B 2 corresponding to, C 1 and C 2 corresponding to, D 1 and D 2 correspond; A 1 and C 1 are provided with two protruding upper metal posts 9, and corresponding A 2 and C 2 are provided with two protruding lower metal posts 10 and upper metal posts 9 and After the lower metal post 10 is bonded, the upper structure and the lower structure can be fixedly connected together to form a resonant cavity 11; two protruding support posts 14 are provided on B 2 and D 2 to jointly support the sensitive layer film 3.
  • the lengths of the upper metal pillar 9, the lower metal pillar 10, and the support pillar 14 are all 1/8 of the working center wavelength of the resonant cavity,
  • the upper metal post 9 and the lower metal post 10 are supporting structures, and at the same time play the role of defining the height of the resonant cavity; when the upper metal post 9 and the lower metal post 10 are bonded together, the cavity height is the upper metal post 9
  • the resonance cavity 11 is provided with a sensitive layer film 3 parallel to the upper substrate 1 and the lower substrate 5.
  • the sensitive layer film 3 is located in a certain cavity parallel to the upper substrate in the resonance cavity 11 1 and in the plane of the lower substrate 5, distributed in the image cell other than the upper metal pillar 9 and the lower metal pillar 10, the sensitive layer film 3 is preferably in the middle of the height of the resonant cavity 11, the material of the sensitive layer film 3 Infrared heat-sensitive materials are used, such as vanadium oxide, amorphous silicon, etc.
  • the thickness of the sensitive layer film 3 is 50-500nm; when light enters the resonant cavity 11, a single reflection can pass through the sensitive layer film 3 twice, thus The light absorption rate is increased; except for the two diagonally fixed connection of the thin film 3 and the support column 14, there is no other material in direct contact with it, which reduces the heat loss caused by heat conduction and is beneficial to the temperature rise caused by the incident infrared signal Maximum conversion to electrical signal output.
  • an integrated circuit 8 is fixedly arranged on the lower surface of the lower substrate 5, including a processing circuit 6 and a storage circuit 7, and the integrated circuit 8 can convert the infrared radiation absorbed by the sensitive layer film 3 into an electrical signal Perform magnification processing and imaging.
  • the metal layer on the back of the upper substrate serves as the upper reflective layer, which is thinner and is a transflective film;
  • the metal layer on the upper surface of the lower substrate serves as the lower reflective layer, and its thickness is thicker, which is the total reflection film; light penetration
  • the transflective upper reflective layer enters the resonant cavity, passes through the sensitive layer film, reaches the lower reflective layer, then totally reflects upward, and then passes through the sensitive layer film again. Therefore, the light reflected in the resonant cavity can pass through the sensitive layer film twice back and forth, so that the number of times of penetrating the sensitive layer film is increased, thereby improving the light utilization rate of the resonant cavity and the photoelectric conversion efficiency of the entire infrared detector.
  • the preparation method of the infrared detector of the present invention specifically includes the following steps:
  • Step 1 Prepare the top sheet structure
  • the upper substrate 1 Take a double-sided polished silicon wafer as the upper substrate 1, deposit a chromium thin film 12 on the lower surface of the upper substrate 1 by electron beam evaporation method, and deposit an aluminum metal film on the upper chromium thin film 12 by electron beam evaporation method , That is, the upper reflective layer 2, the upper chromium film 12 can increase the adhesion of the silicon substrate to the aluminum metal film, the thickness of the upper chromium film 12 is 1/10 of the thickness of the upper reflective layer 2; the upper reflective layer 2 is coated with photoresist After exposure, development, wet etching, and photoresist removal, the patterning of the upper reflective layer 2 and the chromium film 12 is completed, and the metal in the area near the metal pillar 9 and the isolation area between two adjacent detection units is etched away.
  • the thickness of the aluminum metal film is 10 nm
  • the thickness of the chromium film is 1 nm;
  • Exposure expose the sample in a lithography machine.
  • the exposed pattern is two holes on a diagonal of the detection unit (where the two upper metal posts 9 are located).
  • the lithographic pattern was then immersed in the developing solution for 1 min, then rinsed with deionized water and fixed, and dried with a nitrogen gun.
  • metal is plated on the photoresist pattern in the previous step, and the metal in the hole is not completely filled.
  • the metal in the hole is 1.25 ⁇ m, and the thickness of the photoresist is about 3 ⁇ m, which is thicker than the metal thickness. many.
  • Step two prepare the next piece structure
  • the lower chromium thin film 13 is deposited by electron beam evaporation, and the aluminum metal film, that is, the lower reflective layer 4 is deposited on the lower chromium thin film 13 by electron beam evaporation.
  • the thickness of the lower chromium film 13 is one-tenth of the thickness of the lower reflective layer 4; then the upper surface of the lower reflective layer 4 is coated with photoresist, exposure, development, post-baking, wet etching, Remove the photoresist to complete the patterning of the lower reflective layer 4 and the lower chromium film 13, thereby corroding the metal near the metal pillar 10 and the support pillar 14 and the isolation area between two adjacent detection units; in this embodiment
  • the thickness of the reflective layer can be 100 nm, and the thickness of the chromium film can be 10 nm.
  • the photoresist is uniformly spin-coated on the surface of the silicon substrate with the aluminum metal film prepared on the previous step (on the lower reflective layer 4), with a thickness of about 3 ⁇ m. It was then dried at 95°C for 20 min and then cooled to room temperature.
  • the obtained sample was exposed in a lithography machine.
  • the exposure pattern is four holes at the four corners of the detection unit (the position where the lower metal pillar 10 and the support pillar 14 are located).
  • the metal in the photoresist hole is not completely filled with metal.
  • the depth of the photoresist hole is about 3 microns, and the metal in the hole is 1.25 ⁇ m, that is, the thickness of the photoresist is about twice the thickness of the metal.
  • the sacrificial layer is uniformly spin-coated on the lower reflective layer 4 formed in step (5) in the second step above, to a thickness equal to the height of the metal pillar 10 and the support pillar 14, and then cured; the material of the sacrificial layer includes photosensitive Type polyimide or non-photosensitive type polyimide (PI), benzocyclobutene (BCB), etc. Then, through photolithography and etching, the sacrificial layer covered by the top of the metal pillar is removed to form a contact hole.
  • PI photosensitive Type polyimide or non-photosensitive type polyimide
  • BCB benzocyclobutene
  • the sensitive layer film 3 (2) Deposit the sensitive layer film 3.
  • the other infrared heat-sensitive materials such as vanadium oxide and amorphous silicon are deposited on the cured sacrificial layer by reactive sputtering or plasma enhanced chemical vapor deposition, and are patterned by photolithography and etching, as shown in Figure 5 shape.
  • the thickness of the sensitive layer film 3 ranges from 50 nm to 500 nm.
  • the thin film 3 of the sensitive layer is deposited on the upper surface of the sacrificial layer and the top of the support column 14 for supporting the sensitive film, so as to achieve a fixed connection between the sensitive layer and the support column 14.
  • Oxygen plasma dry etching is used to remove the sacrificial layer, and a detection structure composed of two support pillars 14 and a piece of sensitive film 3 resting on the support pillars 14 is obtained.
  • Step 4 Bond the upper and lower pieces
  • the two upper metal posts 9 and the two lower metal posts 10 are correspondingly bonded together, and at the same time, the upper and lower structures are fixedly connected together to form a resonant cavity 11, the height of the resonant cavity is At 1/4 of the working center wavelength, the sensitive layer film 3 is in the middle of the cavity 11.

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Abstract

一种具有高效能谐振腔（11）的红外探测器及其制备方法，为了提高芯片集成度，探测器的谐振腔（11）位于硅片内部，与传统红外探测器件相比，敏感层薄膜（3）所处的真空腔仅几微米高，腔体空间大大减小，更容易形成及保持较高真空，避免空气对流引起的敏感层热损失。敏感层薄膜（3）位于谐振腔（11）正中间，上反射层（2）为上衬底（1）背面半透半反的薄金属层；下反射层（4）为下衬底（5）上表面全反射的厚金属层，光在谐振腔（11）中反射一个来回就可穿过敏感层薄膜（3）两次，使得穿透敏感层薄膜（3）的次数增多，增加了光吸收率。谐振腔（11）反射层（2，4）的制备方法为常规的光刻、镀膜、腐蚀工艺，流程简单易实现，并且在两个衬底（1，5）上分别制作金属柱（9，10），最后用倒装芯片键合组装成谐振腔（11），工艺巧、成本低、精度高。

Description

一种具有高效能谐振腔的红外探测器及其制备方法 【技术领域】
本发明属于光电探测技术领域，具体涉及一种具有高效能谐振腔的红外探测器及其制备方法。
【背景技术】
红外成像系统是依靠目标与背景的热辐射产生景物图像的系统，能24小时全天候工作，并能透过伪装探测出隐藏的热目标。红外探测器是红外成像系统的核心组件，能够以光电效应和热电效应将入射的红外信号转变为电信号输出。但为了进一步提高器件集成度，在红外探测器上方叠加其它硅基探测结构时，由于红外光在穿透上方材料的过程中不可避免存在吸收，使得红外敏感薄膜接收到的红外信号减弱，从而影响探测器的探测效率。因此迫切需要设计新的吸收结构，进一步提高穿透上方结构进入红外探测结构的红外信号的利用率。
【发明内容】
本发明为了解决上述问题，提供了一种具有高效能谐振腔的红外探测器及其制备方法，谐振腔的上表面为其它探测结构背面的半透半反膜，谐振腔的下表面为背于集成电路所在衬底上表面的全反射膜。与传统红外探测器件相比，该谐振腔的腔体高度仅有数微米，腔体空间大大减小，更容易形成及保持较高真空，避免空气对流引起的热损失。另外，谐振腔内的敏感层位于谐振腔的正中间，敏感层薄膜周围除了两个引出电信号的支撑柱之外，没有其它与其直接接触的材料，降低了热传导引起的热损失，使入射红外信号引起的温升尽可能多地转换为电信号输出。而且该探测器结构中光在谐振腔中反射一个来回，可以穿透敏感层薄膜两次，从而进一步提高探测器对红外信号的吸收利用率。
为实现到上述目的，本发明采用以下技术方案予以实现：
一种具有高效能谐振腔的红外探测器，包括相对的上衬底和下衬底；上衬底的下表面设置有上反射层，下衬底的上表面设置有下反射层；
上衬底下表面的探测单元四个角依次设置有A 1、B 1、C 1和D 1四个点，A 1、B 1、C 1和D 1形成第一矩形；下衬底上表面的探测单元四个角依次设置有A 2、B 2、C 2和D 2四个点，A 2、B 2、C 2和D 2形成第二矩形，第一矩形和第二矩形的尺寸相同且四点位置相对应。A 1和C 1设有两个凸出的上金属柱，A 2和C 2设有两个凸出的下金属柱；上金属柱和下金属柱均垂直于上衬底以及下衬底；上金属柱和下金属柱键合时，上反射层、下反射层、上金属柱和下金属柱组成谐振腔；谐振腔内固定设置有平行于上衬底和下衬底的敏感层薄膜；敏感层薄膜和上反射层之间以及敏感层薄膜和下反射层之间均有间隙；下衬底的下方为进行探测器信号处理与存储的集成电路。
本发明的进一步改进在于：
优选的，B 2和D 2上设置有两个凸出的支撑柱，共同支撑敏感层薄膜；敏感层薄膜位于上衬底和下衬底之间的中间位置；支撑柱选用导电金属材料。
优选的，敏感层薄膜的厚度为50-500nm，选用红外热敏感材料。
优选的，谐振腔的高度为所述红外探测器工作波长的1/4；探测器工作时谐振腔内部为真空。
优选的，上衬底和下衬底均为双面抛光硅片；上衬底的上表面为对红外透明的材料和结构，下表面为对红外半透半反的上反射层。
优选的，上反射层和下反射层的材料均选用金属；上反射层的厚度为5-50nm，下反射层的厚度为100-1000nm。
优选的，上衬底和上反射层之间设置有上铬薄膜，下衬底和下反射层之间设置有下铬薄膜；上铬薄膜的厚度为上反射层厚度的0.1；下铬薄膜为下反射层厚度的0.1。
优选的，集成电路分为两层，为处理电路和存储电路，其中处理电路和下衬底的下表面接触。
一种具有高效能谐振腔的红外探测器的制备方法，包括以下步骤：
步骤1：制备谐振腔的上片结构；
取双面抛光硅片作为上衬底，在上衬底的下表面通过电子束蒸发法沉积上铬薄膜及上反射层，在上反射层上涂光刻胶后曝光、显影、湿法腐蚀、去除光刻胶，完成上铬薄膜及上反射层的图形化；在上反射层表面再一次涂光刻胶、曝光、显影、后烘，然后镀导电金属，去除光刻胶，上反射层的A 1处和C 1处形成两个上金属柱，其中金属柱的高度为谐振腔工作中心波长的1/8；从而制备出包括上衬底、上铬薄膜上反射层和上金属柱的上片结构；
步骤2：制备谐振腔的下片结构；
在下衬底的上表面通过电子束蒸发法沉积下铬薄膜及下反射层，在下反射层涂光刻胶、曝光、显影、后烘、湿法腐蚀、去除光刻胶，完成下铬薄膜及下反射层的图形化；在下反射层的上表面再一次涂光刻胶、曝光、显影、后烘，然后镀导电金属，去除光刻胶，下反射层的A 2处和C 2处形成两个下金属柱，B 2处和D 2处形成两个支撑柱；下金属柱和支撑柱的高度相同，高度皆为谐振腔工作中心波长的1/8；从而制备出包括下衬底、下铬薄膜、下反射层、下金属柱和支撑柱的下片结构；
步骤3：制备谐振腔中间敏感层；
在下反射层上旋涂牺牲层，牺牲层的厚度与下金属柱的高度相同，牺牲层固化后在两个支撑柱上端光刻、刻蚀开孔，在牺牲层及支撑柱端面上沉积敏感层薄膜，敏感层薄膜的厚度为50-500nm，然后对敏感层薄膜进行图形化，形成探测单元；等离子刻蚀去除牺牲层，敏感层薄膜下表面的两个角与两个支撑柱固定连接，其余部分悬空；
步骤4：键合上、下片，形成谐振腔；
将上金属柱和下金属柱键合，形成谐振腔；所述谐振腔为上反射层、下反射层与上金属柱和下金属柱构成的腔体，谐振腔内部中央有敏感层薄膜，敏感层薄膜固定连接在支撑柱上端。
优选的，步骤1中，上反射层上第二次涂光刻胶的厚度高于上金属柱的高度；步骤2中，下反射层上第二次涂光刻胶的厚度高于下金属柱和支撑柱的高度。
与现有技术相比，本发明具有以下有益效果：
本发明公开了一种具有高效能谐振腔的红外探测器，该探测器将谐振腔置于硅片内部的结构不仅可以提高器件集成度，而且可以极大地提高红外信号利用率。谐振腔位于 器件内部，而敏感层薄膜位于谐振腔中间，敏感层薄膜与上反射层和下反射层之间的间隙在器件封装后被抽成真空，能够避免空气对流引起的散热，而且该谐振腔的腔体高度仅有数微米，腔体空间小，更容易形成及保持较高真空。上衬底背面的金属层作为上反射层，其厚度较薄，为半透半反膜；下衬底上的上表面的金属层作为下反射层，其厚度较厚，为全反射膜；光穿透半透半反的上反射层，进入谐振腔，穿过敏感层薄膜，到达下反射层，然后向上全反射，再次经过敏感层薄膜，从而光在谐振腔中反射一个来回，就可以穿过中间的敏感层薄膜两次，使得穿透敏感层薄膜的次数增多，从而增加了光吸收率。在传统的内谐振腔和外谐振腔吸收结构中，敏感层薄膜分别作为谐振腔上反射面和下反射面，光在这种结构中反射一个来回，仅到达敏感层薄膜表面一次，光利用率较本发明低，而且传统结构中的敏感薄膜上镀有反射层，热质量大，相同红外信号入射，引起的温升及阻值变化小，导致探测器灵敏度低。而本发明提出的谐振腔结构可避免上述问题。
进一步的，谐振腔内设置有两个支撑柱支撑敏感层薄膜，使得敏感层薄膜在谐振腔内稳定牢固，且其上下可以抽成真空，减少空气对流引起敏感薄膜的热损失。.
进一步的，敏感层薄膜的厚度为50-500nm，选用红外热敏感材料，起到热敏电阻的作用，作为测辐射热计，质量体积越小越好。薄膜的厚度不能太厚，薄膜越厚，热质量越大，导致吸收相同的红外辐射，温升小，降低探测器灵敏度；若薄膜的厚度太薄，很难被支撑。
进一步的，上金属柱和下金属柱高度皆为谐振腔工作波段中心波长的1/8，因此谐振腔的高度为该探测器工作波长的1/4以形成谐振驻波，增强谐振腔内光的吸收率；
进一步的，上反射层的厚度限制为5-50nm，下反射层的厚度限制为100-1000nm。上反射层是半透半反的金属膜，下反射层是全反射的金属膜。
进一步的，每一个衬底和反射金属层之间增设有铬薄膜，以增加硅衬底和反射金属层之间的粘附性。
进一步的，上金属柱和下金属柱均选用导电金属，其中两对金属柱分别键合在一起支撑谐振腔；另两个金属柱支撑敏感层薄膜，测量敏感层薄膜由于吸收红外辐射引起的阻值变化，并与探测结构下方读出电路连接，将探测到的红外辐射信号转化成电信号，引到背面的集成电路进行信号处理。
进一步的，本发明的集成电路分为处理电路和存储电路，处理电路用于信号的放大处理、降噪处理、图像生成、目标的识别和匹配等计算，存储电路用于目标的特征库及图像信息的存储。
本发明还公开了一种具有高效能谐振腔的红外探测器的制备方法，该方法首先单独制备出上片结构和下片结构，然后在下片制备牺牲层，刻蚀接触孔，沉积敏感薄膜，去除牺牲层；然后将上金属柱和下金属柱对应键合，形成具有光学谐振腔的红外探测器。该探测器结构新颖，制备流程简单，而且红外探测器探测效率得以提高。
进一步的，步骤1中的第二次涂光刻胶的厚度高于上金属柱的高度，步骤2中的第二次涂光刻胶的厚度高于下金属柱和支撑柱的高度，均是为了方便刻胶的剥离。
【附图说明】
图1是本发明的红外吸收探测器总体结构图；
图2是本发明的谐振腔的剖面示意图；
图3是本发明的上反射层与上金属柱的平面分布图(A-A截面)；
图4是本发明的下反射层与下金属柱和支撑柱的平面分布图(C-C截面)；
图5是本发明敏感层薄膜与下金属柱和支撑柱的平面分布图(B-B截面)；
图6是本发明的谐振腔与金属柱的排布示意图；
其中：1-上衬底；2-上反射层；3-敏感层薄膜；4-下反射层；5-下衬底；6-处理电路；7-存储电路；8-集成电路；9-上金属柱；10-下金属柱；11-谐振腔；12-上铬薄膜；13-下铬薄膜；14-支撑柱。
【具体实施方式】
下面结合附图对本发明做进一步详细描述：
参见图1和图2，本发明公开了一种具有高效能谐振腔的红外探测器及其制备方法，所述红外探测器包括上衬底1和下衬底5，上衬底1的下表面设置有上反射层2，下衬底5的上表面设置有下反射层4，每个探测器单元的上反射层2和下反射层4形状尺寸相同，其材料均为金属，上反射层2的厚度为5-50nm，上衬底1和上反射层2之间设置有上铬薄膜12，上铬薄膜12的厚度为上反射层2厚度的1/10；下反射层4的厚度为100nm-1000nm，下衬底5和下反射层4之间设置有下铬薄膜13，下铬薄膜13的厚度为下反射层4厚度的1/10。
参见图3所示A-A截面，上衬底1的下表面每个探测单元四个角依次设置有A 1、B 1、C 1和D 1四个点，A 1、B 1、C 1和D 1形成第一矩形；参见图4所示C-C截面，下衬底5的上表面探测单元四个角依次设置有A 2、B 2、C 2和D 2四个点，A 2、B 2、C 2和D 2形成第二矩形，第一矩形和第二矩形的尺寸相同且四点位置相对应，即：A 1和A 2对应，B 1和B 2对应，C 1和C 2对应，D 1和D 2对应；A 1和C 1上设有两个凸出的上金属柱9，对应的A 2和C 2上设有两个凸出的下金属柱10，上金属柱9和下金属柱10键合后，能够将上片结构和下片结构固定连接起来，共同支撑形成谐振腔11；B 2和D 2上设置有两个凸出的支撑柱14，共同支撑敏感层薄膜3。上金属柱9、下金属柱10和支撑柱14的长度均为谐振腔工作中心波长的1/8，且均为导电金属，如金、银、铜、铝等；
参见图6，当上金属柱9和下金属柱10键合在一起时，上衬底1和下衬底5之间形成空腔，该空腔和上反射层2和下反射层4共同构成谐振腔11，上金属柱9和下金属柱10为支撑结构，同时起限定谐振腔高度的作用；当上金属柱9和下金属柱10键合在一起时，腔体高度为上金属柱9和下金属柱10长度之和，即谐振腔工作中心波长的1/4，以形成共振增强吸收；
参见图2和图5所示B-B截面，谐振腔11内设置有平行于上衬底1和下衬底5的敏感层薄膜3，敏感层薄膜3位于谐振腔11内某一个平行于上衬底1和下衬底5的平面内，分布在像元内除上金属柱9和下金属柱10以外的其他区域，敏感层薄膜3优选在谐振腔11高度的中间位置，敏感层薄膜3的材料选用红外热敏感应材料，如氧化钒、非晶硅等，敏感层薄膜3的厚度为50-500nm；当光进入谐振腔11时，反射一个来回就可以穿过敏感层薄膜3两次，从而增加了光吸收率；敏感层薄膜3除了两个对角与支撑柱14固定连接外，周围没有其它与其直接接触的材料，降低了热传导引起的热损失，有利于将入射红外信号引起的温升最大限度地转换为电信号输出。
参见图1，下衬底5的下表面固定设置有集成电路8，包括处理电路6和存储电路7，所述的集成电路8能将敏感层薄膜3所吸收的红外辐射所转化成的电信号进行放大处理及成像。
工作原理：
上衬底背面的金属层作为上反射层，其厚度较薄，为半透半反膜；下衬底上表面的金属层作为下反射层，其厚度较厚，为全反射膜；光穿透半透半反的上反射层，进入谐振腔，穿过敏感层薄膜，到达下反射层，然后向上全反射，再次经过敏感层薄膜。因此光在谐振腔中反射一个来回可穿过敏感层薄膜两次，使得穿透敏感层薄膜的次数增多，从而提高谐振腔对光的利用率及整个红外探测器的光电转换效率。
本发明的红外探测器的制备方法具体包括以下步骤：
步骤一、制备上片结构
(1)取双面抛光硅片作为上衬底1，在上衬底1的下表面上利用电子束蒸发法沉积上铬薄膜12，利用电子束蒸发法在上铬薄膜12上沉积铝金属膜，即上反射层2，上铬薄膜12能够增加硅衬底与铝金属膜粘附性，上铬薄膜12的厚度为上反射层2厚度的1/10；在上反射层2涂光刻胶后曝光、显影、湿法腐蚀、去除光刻胶，完成上反射层2及铬薄膜12的图形化，将金属柱9附近区域及相邻两个探测单元之间隔离区域的金属腐蚀掉。本实施例中，铝金属膜厚度为10nm，铬薄膜为1nm；
(2)旋涂光刻胶，将光刻胶均匀旋涂在上步骤制备的带有铝金属膜的硅衬底表面上(上反射层2上)，旋涂光刻胶厚度约为3μm。随后在95℃热板上烘烤20min并随后冷却至室温。
(3)曝光，将样品在光刻机中曝光。所曝光的图形是探测单元一个对角上的两个孔(两根上金属柱9所在的位置)。
(4)显影，光刻的图形随后通过将样品在显影液中浸渍1min，随后用去离子水漂洗定影，用氮气枪吹干。
(5)然后在上步骤光刻胶图形上镀金属，孔内金属并未全部填满，作为本例的一个实例，孔内金属为1.25μm，光刻胶厚度约3μm，比金属厚度厚的多。
(6)去除光刻胶。样品浸泡在丙酮等有机溶剂内，从光刻胶孔内未填满金属的区域将光刻胶溶解。将大面积的胶去除的同时去除了胶上的金属层，最终只剩下光刻胶孔内的上金属柱9。
步骤二、制备下片结构
(1)在下衬底5的上表面利用电子束蒸发法沉积下铬薄膜13，利用电子束蒸发法在下铬薄膜13上沉积铝金属膜，即下反射层4，下铬薄膜13能够增加硅衬底与铝金属膜粘附性，下铬薄膜13的厚度为下反射层4厚度的十分之一；再在下反射层4上表面涂光刻胶、曝光、显影、后烘、湿法腐蚀、去除光刻胶，完成下反射层4及下铬薄膜13的图形化，从而将金属柱10和支撑柱14附近区域及相邻两个探测单元之间隔离区域的金属腐蚀掉；本实施例中，反射层厚度可为100nm，铬薄膜厚度为10nm。
(2)旋涂光刻胶。将光刻胶均匀旋涂在上步骤制备的带有铝金属膜的硅衬底表面上(下反射层4上)，涂光刻胶厚度约为3μm。随后在95℃下干燥20min并随后冷却至室温。
(3)曝光。将所得样片在光刻机中曝光。作为本例的一个实例，曝光的图形是探测单元四个角上的四个孔(下金属柱10和支撑柱14所在的位置)。
(4)显影，将样品在显影液中浸渍1min，随后用去离子水漂洗并用氮气枪吹干。
(5)然后在上步骤所得的光刻胶图形上镀金属，光刻胶孔内金属并不全部填满金 属，作为本例的一个实例，光刻胶孔深度约3微米，孔内金属为1.25μm，即光刻胶厚度约为金属厚度厚两倍以上。
(6)去除光刻胶。将样品浸泡在丙酮等有机溶剂内，从光刻胶孔内未填满金属的区域将光刻胶溶解。去除大面积胶的同时去除了胶上的金属层，最终只剩下孔内的下金属柱10、支撑柱14。
步骤三、制备敏感层
(1)旋涂牺牲层。在上述步骤二中的第(5)步形成的下反射层4上均匀旋涂牺牲层，涂至厚度和金属柱10及支撑柱14的高度相等，然后固化；所述牺牲层的材料包括光敏型聚酰亚胺或者非光敏型聚酰亚胺(PI)、苯并环丁烯(BCB)等。然后通过光刻和刻蚀，将金属柱顶端覆盖的的牺牲层去除，形成接触孔。
(2)沉积敏感层薄膜3。通过反应溅射的方法或等离子增强化学气相沉积法将氧化钒、非晶硅等其它红外热敏感材料沉积在固化的牺牲层上，并通过光刻和刻蚀对其图形化，形成如图5形状。作为本例的一个实例，敏感层薄膜3厚度取值范围50nm到500nm。敏感层薄膜3沉积在牺牲层上表面及用来支撑敏感薄膜的支撑柱14的顶端，从而实现敏感层与支撑柱14之间的固定连接。
(3)去除牺牲层。利用氧等离子体干法刻蚀去除牺牲层，得到由两个支撑柱14和一片搭在支撑柱14上的敏感薄膜3组成的探测结构。
步骤四、键合上下片
利用倒装芯片键合机，将两个上金属柱9和两个下金属柱10对应键合在一起，同时上片结构和下片结构固定连接在一起，形成谐振腔11，谐振腔高度是工作中心波长的1/4，敏感层薄膜3在谐振腔11的中间。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种具有高效能谐振腔的红外探测器，其特征在于，包括相对的上衬底(1)和下衬底(5)；上衬底(1)的下表面设置有上反射层(2)，下衬底(5)的上表面设置有下反射层(4)；
    上衬底(1)下表面的探测单元四个角依次设置有A 1、B 1、C 1和D 1四个点，A 1、B 1、C 1和D 1形成第一矩形；下衬底(5)上表面的探测单元四个角依次设置有A 2、B 2、C 2和D 2四个点，A 2、B 2、C 2和D 2形成第二矩形，第一矩形和第二矩形的尺寸相同且四点位置相对应；A 1和C 1设有两个凸出的上金属柱(9)，A 2和C 2设有两个凸出的下金属柱(10)；上金属柱(9)和下金属柱(10)均垂直于上衬底(1)以及下衬底(5)；上金属柱(9)和下金属柱(10)键合时，上反射层(2)、下反射层(4)、上金属柱(9)和下金属柱(10)组成谐振腔(11)；谐振腔(11)内固定设置有平行于上衬底(1)和下衬底(5)的敏感层薄膜(3)；敏感层薄膜(3)和上反射层(2)之间以及敏感层薄膜(3)和下反射层(4)之间均有间隙；下衬底(5)的下方为进行探测器信号处理与存储的集成电路(8)。
  2. 根据权利要求1所述的一种具有高效能谐振腔的红外探测器，其特征在于，B 2和D 2上设置有两个凸出的支撑柱(14)，共同支撑敏感层薄膜(3)；敏感层薄膜(3)位于上衬底(1)和下衬底(5)之间的中间位置；支撑柱(14)选用导电金属材料。
  3. 根据权利要求1所述的一种具有高效能谐振腔的红外探测器，其特征在于，敏感层薄膜(3)的厚度为50-500nm，选用红外热敏感材料。
  4. 根据权利要求1所述的一种具有高效能谐振腔的红外探测器，其特征在于，谐振腔(11)的高度为所述红外探测器工作波长的1/4；探测器工作时谐振腔(11)内部为真空。
  5. 根据权利要求1所述的一种具有高效能谐振腔的红外探测器，其特征在于，上衬底(1)和下衬底(5)均为双面抛光硅片；上衬底(1)的上表面为对红外透明的材料和结构，下表面为对红外半透半反的上反射层(2)。
  6. 根据权利要求1所述的一种具有高效能谐振腔的红外探测器，其特征在于，上反射层(2)和下反射层(4)的材料均选用金属；上反射层(2)的厚度为5-50nm，下反射层(4)的厚度为100-1000nm。
  7. 根据权利要求1所述的一种具有高效能谐振腔的红外探测器，其特征在于，上衬底(1)和上反射层(2)之间设置有上铬薄膜(12)，下衬底(5)和下反射层(4)之间设置有下铬薄膜(13)；上铬薄膜(12)的厚度为上反射层(2)厚度的0.1；下铬薄膜(13)为下反射层(4)厚度的0.1。
  8. 根据权利要求1-7任意一项所述的一种具有高效能谐振腔的红外探测器，其特征在于，集成电路(8)分为两层，为处理电路(6)和存储电路(7)，其中处理电路(6)和下衬底(5)的下表面接触。
  9. 一种具有高效能谐振腔的红外探测器的制备方法，其特征在于，包括以下步骤：
    步骤1：制备谐振腔的上片结构；
    取双面抛光硅片作为上衬底(1)，在上衬底(1)的下表面通过电子束蒸发法沉积上铬薄膜(12)及上反射层(2)，在上反射层(2)上涂光刻胶后曝光、显影、湿法腐蚀、去除光刻胶，完成上铬薄膜(12)及上反射层(2)的图形化；在上反射层(2)表面再一次涂光刻胶、曝光、显影、后烘，然后镀导电金属，去除光刻胶，上反射层(2)的A 1处和C 1处形成两个上金属柱(9)，其中金属柱(9)的高度为谐振腔工作中心波长的1/8；从而制备出包括上衬底(1)、上铬薄膜(12)上反射层(2)和上金属柱(9)的上片结构；
    步骤2：制备谐振腔的下片结构；
    在下衬底(5)的上表面通过电子束蒸发法沉积下铬薄膜(13)及下反射层(4)，在下反射层(4)涂光刻胶、曝光、显影、后烘、湿法腐蚀、去除光刻胶，完成下铬薄膜(13)及下反射层(4)的图形化；在下反射层(4)的上表面再一次涂光刻胶、曝光、显影、后烘，然后镀导电金属，去除光刻胶，下反射层(4)的A 2处和C 2处形成两个下金属柱(10)，B 2处和D 2处形成两个支撑柱(14)；下金属柱(10)和支撑柱(14)的高度相同，高度皆为谐振腔工作中心波长的1/8；从而制备出包括下衬底(5)、下铬薄膜(13)、下反射层(4)、下金属柱(10)和支撑柱(14)的下片结构；
    步骤3：制备谐振腔中间敏感层；
    在下反射层(4)上旋涂牺牲层，牺牲层的厚度与下金属柱(10)的高度相同，牺牲层固化后在两个支撑柱(14)上端光刻、刻蚀开孔，在牺牲层及支撑柱端面上沉积敏感层薄膜(3)，敏感层薄膜(3)的厚度为50-500nm，然后对敏感层薄膜(3)进行图形化，形成探测单元；等离子刻蚀去除牺牲层，敏感层薄膜(3)下表面的两个角与两个支撑柱(14)固定连接，其余部分悬空；
    步骤4：键合上、下片，形成谐振腔；
    将上金属柱(9)和下金属柱(10)键合，形成谐振腔(11)；所述谐振腔(11)为上反射层(2)、下反射层(4)与上金属柱(9)和下金属柱(10)构成的腔体，谐振腔(11)内部中央有敏感层薄膜(3)，敏感层薄膜(3)固定连接在支撑柱(14)上端。
  10. 根据权利要求9所述的一种具有高效能谐振腔的红外探测器的制备方法，其特征在于，步骤1中，上反射层(2)上第二次涂光刻胶的厚度高于上金属柱(9)的高度；步骤2中，下反射层(4)上第二次涂光刻胶的厚度高于下金属柱(10)和支撑柱(14)的高度。
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