WO2020124871A1 - Etching endpoint monitoring device and etching endpoint monitoring method - Google Patents

Etching endpoint monitoring device and etching endpoint monitoring method Download PDF

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Publication number
WO2020124871A1
WO2020124871A1 PCT/CN2019/081606 CN2019081606W WO2020124871A1 WO 2020124871 A1 WO2020124871 A1 WO 2020124871A1 CN 2019081606 W CN2019081606 W CN 2019081606W WO 2020124871 A1 WO2020124871 A1 WO 2020124871A1
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WIPO (PCT)
Prior art keywords
incident light
metal layer
light
etching
substrate
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PCT/CN2019/081606
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French (fr)
Chinese (zh)
Inventor
梅园
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深圳市华星光电技术有限公司
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Publication of WO2020124871A1 publication Critical patent/WO2020124871A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the invention relates to the field of display technology, and in particular to an etching endpoint monitoring device and an etching endpoint monitoring method.
  • LCD liquid crystal displays
  • other flat display devices have been widely used in mobile phones, TVs, and individuals due to their advantages of high image quality, power saving, thin body, and wide range of applications.
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream in display devices.
  • liquid crystal display devices on the existing market are backlight type liquid crystal displays, which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal thin wires in the middle of the two glass substrates.
  • the liquid crystal molecules are controlled to change the direction by turning on or off, and the light of the backlight module is controlled. Refracted to produce a picture.
  • a liquid crystal display panel is composed of a color filter substrate (CF, Color Filter) and a thin film transistor substrate (TFT, Thin Film) Transistor), liquid crystal (LC, Liquid Crystal) and sealant frame (Sealant) sandwiched between the color film substrate and the thin film transistor substrate
  • the molding process generally includes: the front-end array (Array) process (film, yellow light, etching And film stripping), the middle cell process (the TFT substrate is bonded to the CF substrate) and the rear stage module assembly process (the driver IC is pressed to the printed circuit board).
  • the front-stage Array process is mainly to form a TFT substrate to facilitate the control of the movement of liquid crystal molecules;
  • the middle-stage Cell process is mainly to add liquid crystal between the TFT substrate and the CF substrate;
  • the rear-stage module assembly process is mainly to drive the IC pressing and printed circuit The integration of the board then drives the liquid crystal molecules to rotate and display images.
  • the purpose of the present invention is to provide an etching end point monitoring device, which can quickly and effectively monitor the etching end point, promote the development of the etching process and improve the etching accuracy.
  • the object of the present invention is also to provide an etching end point monitoring method, which can quickly and effectively monitor the etching end point, promote the development of the etching process and improve the etching accuracy.
  • the present invention provides an etching endpoint monitoring device, which includes: an incident light source, a reflecting mirror and a color rendering plate;
  • the incident light source is used to emit incident light to the substrate to be etched
  • the reflector is located on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, and is used to reflect the first reflected light and generate second reflected light to irradiate the color rendering board;
  • the color rendering plate is located on the optical path of the second reflected light, and is used to display the light spot generated by the second reflected light, so as to monitor the etching end point of the substrate to be etched according to the intensity change of the light spot .
  • the substrate to be etched includes: a base substrate and a first metal layer on the base substrate;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
  • the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
  • the substrate to be etched includes: a base substrate, a first metal layer on the base substrate, and a second metal layer on the first metal layer;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
  • the light spot is weak first, then strong, and then weak on the color rendering board.
  • the light spot is etched from weak to strong, which is the end point of the etching of the second metal layer, and the light spot is changed from strong to weak Is the end point of the etching of the first metal layer.
  • the etching end point monitoring device further includes: a convex lens located on the optical path of the second reflected light, the convex lens is used to focus the second reflected light, and the color developing plate is located at the focal point of the convex lens.
  • the incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
  • the invention also provides an etching endpoint monitoring method, including:
  • Step S1 Provide an etching end point monitoring device, including an incident light source, a reflecting mirror and a color rendering plate;
  • Step S2 providing a substrate to be etched, and etching the substrate to be etched, and the incident light source emits incident light toward the substrate to be etched;
  • Step S3 Set the mirror on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light to reflect the first reflected light and generate second reflected light to irradiate the color On board
  • Step S4 The color rendering plate displays a light spot generated by the second reflected light, and monitors the etching end point of the substrate to be etched according to the strength change of the light spot.
  • the substrate to be etched includes: a base substrate and a first metal layer on the base substrate;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
  • the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
  • the substrate to be etched includes: a base substrate, a first metal layer on the base substrate, and a second metal layer on the first metal layer;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
  • the light spot is weak first, then strong, and then weak on the color rendering board.
  • the light spot is etched from weak to strong, which is the end point of the etching of the second metal layer.
  • the moment when it becomes weak is the end point of the etching of the first metal layer.
  • the etching end point monitoring device provided in the step S1 further includes: a convex lens;
  • the second reflected light in step S3 needs to be focused by the convex lens before being irradiated to the color rendering board;
  • the color rendering plate is located at the focal point of the convex lens to display the light spot generated by the focused second reflected light.
  • the incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
  • the present invention provides an etching endpoint monitoring device, which includes: an incident light source, a reflector and a color rendering plate; the incident light source is used to emit incident light to the substrate to be etched; The substrate to be etched reflects the first reflected light generated by the incident light on the optical path for reflecting the first reflected light and generating second reflected light to irradiate the color rendering board; the color rendering board is located at the The optical path of the second reflected light is used to display the light spot generated by the second reflected light.
  • the difference in the reflection characteristics of the incident light by different film layers on the substrate to be etched makes the light spot of the display panel in different
  • the etching stage has different strong and weak states, so that the etching end point can be quickly and effectively monitored according to the strength change of the light spot, which promotes the development of the etching process and the improvement of the etching accuracy.
  • the invention also provides an etching endpoint monitoring method, which can quickly and effectively monitor the etching endpoint, promote the development of the etching process and improve the etching accuracy.
  • FIGS. 1 to 2 are schematic diagrams of a first embodiment of an etching endpoint monitoring device of the present invention
  • 3 to 5 are schematic diagrams of the second embodiment of the etching endpoint monitoring device of the present invention.
  • FIG. 6 is a schematic diagram of a third embodiment of an etching endpoint monitoring device of the present invention.
  • FIG. 7 is a flowchart of an etching end point monitoring method of the present invention.
  • the present invention provides an etching endpoint monitoring device, which is characterized by comprising: an incident light source 1 ,Reflector 2 And color plate 3 ;
  • the incident light source 1 Used to emit incident light to the substrate to be etched;
  • the mirror 2 Located on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, is used to reflect the first reflected light, and generate second reflected light to irradiate the color rendering board;
  • the color rendering board 3 Located on the optical path of the second reflected light, it is used to display the light spot generated by the second reflected light, so as to monitor the etching end point of the substrate to be etched according to the change of the intensity of the light spot.
  • the substrate to be etched includes: a base substrate 11 And located on the base substrate 11 First metal layer 12 .
  • the base substrate 11 Is a glass substrate
  • the first metal layer 12 The material can be selected from various metals in the third to seventh periods of the periodic table.
  • the spot on the light can change with the substrate in different etching stages.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, in detail, that is, the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate 11 Time, 65% The above incident light passes through the base substrate through refraction 11 .
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the first metal layer 12
  • obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 2 After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 3
  • the color rendering board 3 There is an obvious light spot on the surface, as the etching progresses, as shown in the figure 2
  • the incident light irradiates the base substrate 11
  • the color rendering plate 3 Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 3
  • the moment when the light spot on the surface becomes weak or even disappears is the first metal layer 12
  • the etching end point that is, during etching, the light spot is strong
  • the substrate to be etched includes: a base substrate 11 , Located on the base substrate 11 First metal layer 12 And located in the first metal layer 12 Second metal layer 13 .
  • the base substrate 11 Is a glass substrate, the first metal layer 12 And the second metal layer 13
  • the material can be selected from various metals in the third to seventh periods of the periodic table.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, when the incident light irradiates the second metal layer 13 When on, most of the incident light is caused by the second metal layer 13 Absorbed, almost no reflected light, in detail, the incident light source 1 The incident light emitted has the following characteristics: the incident light irradiates the second metal layer 13 Time, 65% The above incident light is affected by the second metal layer 13 Absorbed; the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate
  • the range of the spectral line of the incident light and the first metal layer can be set 12
  • the intersection of the inverse spectral lines belongs to the first metal layer 12 A subset of the inverse spectral lines of 13 There is no intersection of the inverted color spectral lines to achieve that the incident light is captured by the second metal layer 13 Absorbed and absorbed by the first metal layer 12 Reflective characteristics.
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the second metal layer 13 Most of the light is absorbed and almost no reflected light is produced.
  • the substrate to be etched is placed horizontally, and the incident light is irradiated onto the substrate to be etched from above the substrate to be etched.
  • the position of the etched substrate will not move, the incident light irradiating the substrate to be etched is also relatively fixed, and the optical path of the reflected light generated is also relatively fixed, but during the beaker test, the substrate to be etched is held vertically and held Test in the beaker. At this time, the substrate to be etched may have swings.
  • the incident light irradiates the substrate to be etched, multiple reflection points may be generated and multiple reflected lights may be generated, such as the third invention. Examples.
  • the substrate to be etched is placed vertically into a beaker for testing, and the substrate to be etched has a swing with a swing amplitude of ⁇ 1cm ,
  • the incident light generates three first reflected lights at three swing positions, and the three first reflected lights pass through the reflective sheet 2 After reflection, three second reflected lights are generated.
  • a convex lens is also added 4 ,
  • the convex lens 4 Disposed on the optical path of the three second reflected lights, for focusing the three second reflected lights, and at the same time the color rendering plate 3
  • the convex lens 4 On the focus, thus making the color rendering board 3 There is still one spot on the top, which ensures that the spot can still be effectively observed.
  • the second reflected light is perpendicular to the color rendering plate 3
  • the incident light source 1 The incident light emitted is a monochromatic laser or light processed by selective filtering technology.
  • the present invention provides an etching endpoint monitoring method, including:
  • step S1 Provide an etching endpoint monitoring device, including incident light source 1 ,Reflector 2 And color plate 3 ;
  • step S2 Providing a substrate to be etched, and etching the substrate to be etched, and at the same time the incident light source 1 Emit incident light to the substrate to be etched;
  • step S3 The mirror 2 It is arranged on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, to reflect the first reflected light, and generate second reflected light to irradiate the color rendering board 3 on;
  • step S4 The color rendering board 3 A light spot generated by the second reflected light is displayed, and the etching end point of the substrate to be etched is monitored according to the strength change of the light spot.
  • the substrate to be etched includes: a base substrate 11 And located on the base substrate 11 First metal layer 12 .
  • the base substrate 11 Is a glass substrate
  • the first metal layer 12 The material can be selected from various metals in the third to seventh periods of the periodic table.
  • the spot on the light can change with the substrate in different etching stages.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, in detail, that is, the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate 11 Time, 65% The above incident light passes through the base substrate through refraction 11 .
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the first metal layer 12
  • obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 2 After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 3
  • the color rendering board 3 There is an obvious light spot on the surface, as the etching progresses, as shown in the figure 2
  • the incident light irradiates the base substrate 11
  • the color rendering plate 3 Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 3
  • the moment when the light spot on the surface becomes weak or even disappears is the first metal layer 12
  • the etching end point that is, during etching, the light spot is strong
  • the substrate to be etched includes: a base substrate 11 , Located on the base substrate 11 First metal layer 12 And located in the first metal layer 12 Second metal layer 13 .
  • the base substrate 11 Is a glass substrate, the first metal layer 12 And the second metal layer 13
  • the material can be selected from various metals in the third to seventh periods of the periodic table.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, when the incident light irradiates the second metal layer 13 When on, most of the incident light is caused by the second metal layer 13 Absorbed, almost no reflected light, in detail, the incident light source 1 The incident light emitted has the following characteristics: the incident light irradiates the second metal layer 13 Time, 65% The above incident light is affected by the second metal layer 13 Absorbed; the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate
  • the range of the spectral line of the incident light and the first metal layer can be set 12
  • the intersection of the inverse spectral lines belongs to the first metal layer 12 A subset of the inverse spectral lines of 13 There is no intersection of the inverted color spectral lines to achieve that the incident light is captured by the second metal layer 13 Absorbed and absorbed by the first metal layer 12 Reflective characteristics.
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the second metal layer 13 Most of the light is absorbed and almost no reflected light is produced.
  • the substrate to be etched is placed horizontally, and the incident light is irradiated onto the substrate to be etched from above the substrate to be etched.
  • the position of the etched substrate will not move, the incident light irradiating the substrate to be etched is also relatively fixed, and the optical path of the reflected light generated is also relatively fixed, but during the beaker test, the substrate to be etched is held vertically and held Test in the beaker. At this time, the substrate to be etched may have swings.
  • the incident light irradiates the substrate to be etched, multiple reflection points may be generated and multiple reflected lights may be generated, such as the third invention. Examples.
  • the substrate to be etched is placed vertically into a beaker for testing, and the substrate to be etched has a swing with a swing amplitude of ⁇ 1cm ,
  • the incident light generates three first reflected lights at three swing positions, and the three first reflected lights pass through the reflective sheet 2 After reflection, three second reflected lights are generated.
  • a convex lens is also added 4 ,
  • the convex lens 4 Disposed on the optical path of the three second reflected lights, for focusing the three second reflected lights, and at the same time the color rendering plate 3
  • the convex lens 4 On the focus, thus making the color rendering board 3 There is still one spot on the top, which ensures that the spot can still be effectively observed.
  • the second reflected light is perpendicular to the color rendering plate 3
  • the incident light source 1 The incident light emitted is a monochromatic laser or light processed by selective filtering technology.
  • the present invention provides an etching end point monitoring device, including: an incident light source, a reflector and a color rendering plate; the incident light source is used to emit incident light to the substrate to be etched; the reflector is located by the The substrate to be etched reflects the first reflected light on the optical path generated by the incident light, and is used to reflect the first reflected light and generate second reflected light to irradiate the color rendering plate; the color rendering plate is located on the first The optical path of the second reflected light is used to display the light spot generated by the second reflected light.
  • the difference in the reflection characteristics of the incident light by different film layers on the substrate to be etched makes the light spot of the display panel etched in different ways
  • the stages have different strength states, so that the etching end point can be monitored quickly and effectively according to the strength changes of the light spot, so as to promote the development of the etching process and the improvement of the etching accuracy.
  • the invention also provides an etching endpoint monitoring method, which can quickly and effectively monitor the etching endpoint, promote the development of the etching process and improve the etching accuracy.

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Abstract

Provided in the present invention are an etching endpoint monitoring device and an etching endpoint monitoring method. The etching endpoint monitoring device comprises: an incident light source, a mirror, and a chromogenic plate. The incident light source is used for transmitting an incident light to a substrate to be etched. The mirror is arranged on the light path of a first reflected light produced by said substrate reflecting the incident light and is used for reflecting the first reflected light and generating a second reflected light to be shone on the chromogenic plate. The chromogenic plate is arranged on the light path of the second reflected light and is used for displaying a light spot produced by the second reflected light. By utilizing different characteristics of different film layers on said substrate in reflecting the incident light, a light spot of a display panel is provided with different states of strength during different etching phases, thus allowing quick and efficient monitoring of an etching endpoint on the basis of changes in the strength of the light spot, and promoting the development of an etching process and increasing the precision of etching.

Description

蚀刻终点监控装置及蚀刻终点监控方法Etching endpoint monitoring device and etching endpoint monitoring method 技术领域Technical field
本发明涉及显示技术领域，尤其涉及一种蚀刻终点监控装置及蚀刻终点监控方法。The invention relates to the field of display technology, and in particular to an etching endpoint monitoring device and an etching endpoint monitoring method.
背景技术Background technique
随着显示技术的发展，液晶显示器（Liquid Crystal Display，LCD）等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。With the development of display technology, liquid crystal displays (LCD) and other flat display devices have been widely used in mobile phones, TVs, and individuals due to their advantages of high image quality, power saving, thin body, and wide range of applications. Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream in display devices.
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组（backlight module）。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。Most of the liquid crystal display devices on the existing market are backlight type liquid crystal displays, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal thin wires in the middle of the two glass substrates. The liquid crystal molecules are controlled to change the direction by turning on or off, and the light of the backlight module is controlled. Refracted to produce a picture.
通常液晶显示面板由彩膜基板（CF，Color Filter）、薄膜晶体管基板（TFT，Thin Film Transistor)、夹于彩膜基板与薄膜晶体管基板之间的液晶（LC，Liquid Crystal）及密封胶框（Sealant）组成，其成型工艺一般包括：前段阵列（Array）制程（薄膜、黄光、蚀刻及剥膜）、中段成盒（Cell）制程（TFT基板与CF基板贴合）及后段模组组装制程（驱动IC与印刷电路板压合）。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。Generally, a liquid crystal display panel is composed of a color filter substrate (CF, Color Filter) and a thin film transistor substrate (TFT, Thin Film) Transistor), liquid crystal (LC, Liquid Crystal) and sealant frame (Sealant) sandwiched between the color film substrate and the thin film transistor substrate, the molding process generally includes: the front-end array (Array) process (film, yellow light, etching And film stripping), the middle cell process (the TFT substrate is bonded to the CF substrate) and the rear stage module assembly process (the driver IC is pressed to the printed circuit board). Among them, the front-stage Array process is mainly to form a TFT substrate to facilitate the control of the movement of liquid crystal molecules; the middle-stage Cell process is mainly to add liquid crystal between the TFT substrate and the CF substrate; the rear-stage module assembly process is mainly to drive the IC pressing and printed circuit The integration of the board then drives the liquid crystal molecules to rotate and display images.
在液晶显示面板的制作过程中经常需要使用蚀刻制程，蚀刻终点的判定的精确性，对蚀刻制程的效果有较大的影响，现有技术中，缺乏能够有效判定蚀刻终点装置，尤其判定烧杯实验时以及面板生产过程的局部范围（5cm 2以下面积）的蚀刻终点的装置，不利于蚀刻工艺的开发及蚀刻精度的提升。 In the manufacturing process of liquid crystal display panels, it is often necessary to use an etching process. The accuracy of the determination of the etching end point has a great influence on the effect of the etching process. In the prior art, there is a lack of a device that can effectively determine the etching end point, especially the beaker experiment The device of the etching end point of the local range (area of 5cm 2 or less) of the panel production process is not conducive to the development of the etching process and the improvement of the etching accuracy.
技术问题technical problem
本发明的目的在于提供一种蚀刻终点监控装置，能够快捷有效的监控蚀刻终点，促进蚀刻工艺的开发及蚀刻精度的提升。The purpose of the present invention is to provide an etching end point monitoring device, which can quickly and effectively monitor the etching end point, promote the development of the etching process and improve the etching accuracy.
本发明的目的还在于提供一种蚀刻终点监控方法，能够快捷有效的监控蚀刻终点，促进蚀刻工艺的开发及蚀刻精度的提升。The object of the present invention is also to provide an etching end point monitoring method, which can quickly and effectively monitor the etching end point, promote the development of the etching process and improve the etching accuracy.
技术解决方案Technical solution
为实现上述目的，本发明提供了一种蚀刻终点监控装置，包括：入射光源、反射镜及显色板；In order to achieve the above object, the present invention provides an etching endpoint monitoring device, which includes: an incident light source, a reflecting mirror and a color rendering plate;
所述入射光源用于向待蚀刻的基板发射入射光；The incident light source is used to emit incident light to the substrate to be etched;
所述反射镜位于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，用于反射所述第一反射光，产生第二反射光照射至显色板上；The reflector is located on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, and is used to reflect the first reflected light and generate second reflected light to irradiate the color rendering board;
所述显色板位于所述第二反射光的光路上，用于显示由所述第二反射光产生的光斑，以根据所述光斑的强弱变化，监控所述待蚀刻的基板的蚀刻终点。The color rendering plate is located on the optical path of the second reflected light, and is used to display the light spot generated by the second reflected light, so as to monitor the etching end point of the substrate to be etched according to the intensity change of the light spot .
所述待蚀刻的基板包括：衬底基板及位于所述衬底基板上的第一金属层；The substrate to be etched includes: a base substrate and a first metal layer on the base substrate;
所述入射光源发出的入射光具有如下特性：所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
蚀刻时，所述光斑在所述显色板上先强后弱，所述光斑从强变至弱的时刻，为所述第一金属层的蚀刻终点。During etching, the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
所述待蚀刻的基板包括：衬底基板、位于所述衬底基板上的第一金属层、及位于所述第一金属层上的第二金属层；The substrate to be etched includes: a base substrate, a first metal layer on the base substrate, and a second metal layer on the first metal layer;
所述入射光源发出的入射光具有如下特性：所述入射光照射到第二金属层时，65%以上的入射光被所述第二金属层所吸收；所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
蚀刻时，所述光斑在所述显色板上先弱后强接着又弱，所述光斑从弱变至强的蚀刻，为第二金属层的蚀刻终点，所述光斑从强又变至弱的时刻，为第一金属层的蚀刻终点。During the etching, the light spot is weak first, then strong, and then weak on the color rendering board. The light spot is etched from weak to strong, which is the end point of the etching of the second metal layer, and the light spot is changed from strong to weak Is the end point of the etching of the first metal layer.
所述蚀刻终点监控装置还包括：位于所述第二反射光的光路上的凸透镜，所述凸透镜用于将所述第二反射光进行聚焦，所述显色板位于所述凸透镜的焦点处。The etching end point monitoring device further includes: a convex lens located on the optical path of the second reflected light, the convex lens is used to focus the second reflected light, and the color developing plate is located at the focal point of the convex lens.
所述入射光源发射的入射光为单色激光或经过选择性滤光技术处理后的光线。The incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
本发明还提供一种蚀刻终点监控方法，包括：The invention also provides an etching endpoint monitoring method, including:
步骤S1、提供一蚀刻终点监控装置，包括入射光源、反射镜及显色板；Step S1: Provide an etching end point monitoring device, including an incident light source, a reflecting mirror and a color rendering plate;
步骤S2、提供一待蚀刻的基板，并对所述待蚀刻的基板进行蚀刻，同时所述入射光源向待蚀刻的基板发射入射光；Step S2, providing a substrate to be etched, and etching the substrate to be etched, and the incident light source emits incident light toward the substrate to be etched;
步骤S3、将所述反射镜设置于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，以反射所述第一反射光，产生第二反射光照射至显色板上；Step S3: Set the mirror on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light to reflect the first reflected light and generate second reflected light to irradiate the color On board
步骤S4、所述显色板显示由所述第二反射光产生的光斑，并根据所述光斑的强弱变化，监控所述待蚀刻的基板的蚀刻终点。Step S4: The color rendering plate displays a light spot generated by the second reflected light, and monitors the etching end point of the substrate to be etched according to the strength change of the light spot.
所述步骤S2中，待蚀刻的基板包括：衬底基板及位于所述衬底基板上的第一金属层；In the step S2, the substrate to be etched includes: a base substrate and a first metal layer on the base substrate;
所述入射光源发出的入射光具有如下特性：所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
所述步骤S4中，所述光斑在所述显色板上先强后弱，所述光斑从强变至弱的时刻，为所述第一金属层的蚀刻终点。In the step S4, the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
所述步骤S2中，所述待蚀刻的基板包括：衬底基板、位于所述衬底基板上的第一金属层、及位于所述第一金属层上的第二金属层；In the step S2, the substrate to be etched includes: a base substrate, a first metal layer on the base substrate, and a second metal layer on the first metal layer;
所述入射光源发出的入射光具有如下特性：所述入射光照射到第二金属层时，65%以上的入射光被所述第二金属层所吸收；所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
所述步骤S4中，所述光斑在所述显色板上先弱后强接着又弱，所述光斑从弱变至强的蚀刻，为第二金属层的蚀刻终点，所述光斑从强又变至弱的时刻，为第一金属层的蚀刻终点。In the step S4, the light spot is weak first, then strong, and then weak on the color rendering board. The light spot is etched from weak to strong, which is the end point of the etching of the second metal layer. The moment when it becomes weak is the end point of the etching of the first metal layer.
所述步骤S1中提供的蚀刻终点监控装置还包括：凸透镜；The etching end point monitoring device provided in the step S1 further includes: a convex lens;
所述步骤S3中的第二反射光在照射到所述显色板上之前还需要经过所述凸透镜的聚焦；The second reflected light in step S3 needs to be focused by the convex lens before being irradiated to the color rendering board;
所述步骤S4中，所述显色板位于所述凸透镜的焦点处，以显示由聚焦后的第二反射光产生的光斑。In the step S4, the color rendering plate is located at the focal point of the convex lens to display the light spot generated by the focused second reflected light.
所述入射光源发射的入射光为单色激光或经过选择性滤光技术处理后的光线。The incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
有益效果Beneficial effect
本发明的有益效果：本发明提供一种蚀刻终点监控装置，包括：入射光源、反射镜及显色板；所述入射光源用于向待蚀刻的基板发射入射光；所述反射镜位于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，用于反射所述第一反射光，产生第二反射光照射至显色板上；所述显色板位于所述第二反射光的光路上，用于显示由所述第二反射光产生的光斑，利用待蚀刻的基板上不同膜层对所述入射光的反射特性的不同，使得显示板的光斑在不同的蚀刻阶段具有不同的强弱状态，从而能够根据所述光斑的强弱变化，快捷有效的监控蚀刻终点，促进蚀刻工艺的开发及蚀刻精度的提升。本发明还提供一种蚀刻终点监控方法，能够快捷有效的监控蚀刻终点，促进蚀刻工艺的开发及蚀刻精度的提升。Beneficial effect of the present invention: The present invention provides an etching endpoint monitoring device, which includes: an incident light source, a reflector and a color rendering plate; the incident light source is used to emit incident light to the substrate to be etched; The substrate to be etched reflects the first reflected light generated by the incident light on the optical path for reflecting the first reflected light and generating second reflected light to irradiate the color rendering board; the color rendering board is located at the The optical path of the second reflected light is used to display the light spot generated by the second reflected light. The difference in the reflection characteristics of the incident light by different film layers on the substrate to be etched makes the light spot of the display panel in different The etching stage has different strong and weak states, so that the etching end point can be quickly and effectively monitored according to the strength change of the light spot, which promotes the development of the etching process and the improvement of the etching accuracy. The invention also provides an etching endpoint monitoring method, which can quickly and effectively monitor the etching endpoint, promote the development of the etching process and improve the etching accuracy.
附图说明BRIEF DESCRIPTION
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings are provided for reference and explanation only, and are not intended to limit the present invention.
附图中，In the drawings,
图1至图2为本发明的蚀刻终点监控装置的第一实施例的示意图；1 to 2 are schematic diagrams of a first embodiment of an etching endpoint monitoring device of the present invention;
图3至图5为本发明的蚀刻终点监控装置的第二实施例的示意图；3 to 5 are schematic diagrams of the second embodiment of the etching endpoint monitoring device of the present invention;
图6为本发明的蚀刻终点监控装置的第三实施例的示意图；6 is a schematic diagram of a third embodiment of an etching endpoint monitoring device of the present invention;
图7为本发明的蚀刻终点监控方法的流程图。7 is a flowchart of an etching end point monitoring method of the present invention.
本发明的实施方式Embodiments of the invention
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。In order to further elaborate on the technical means and effects adopted by the present invention, the following will describe in detail with reference to the preferred embodiments of the present invention and the accompanying drawings.
请参阅图Please refer to the picture 11 至图To figure 66 ，本发明提供一种蚀刻终点监控装置，其特征在于，包括：入射光源The present invention provides an etching endpoint monitoring device, which is characterized by comprising: an incident light source 11 、反射镜,Reflector 22 及显色板And color plate 33 ；;
所述入射光源The incident light source 11 用于向待蚀刻的基板发射入射光；Used to emit incident light to the substrate to be etched;
所述反射镜The mirror 22 位于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，用于反射所述第一反射光，产生第二反射光照射至显色板上；Located on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, is used to reflect the first reflected light, and generate second reflected light to irradiate the color rendering board;
所述显色板The color rendering board 33 位于所述第二反射光的光路上，用于显示由所述第二反射光产生的光斑，以根据所述光斑的强弱变化，监控所述待蚀刻的基板的蚀刻终点。Located on the optical path of the second reflected light, it is used to display the light spot generated by the second reflected light, so as to monitor the etching end point of the substrate to be etched according to the change of the intensity of the light spot.
具体地，如图Specifically, as shown 11 至图To figure 22 所示，在本发明的第一实施例中，所述待蚀刻的基板包括：衬底基板As shown, in the first embodiment of the present invention, the substrate to be etched includes: a base substrate 1111 及位于所述衬底基板And located on the base substrate 1111 上的第一金属层First metal layer 1212 。.
优选地，所述衬底基板Preferably, the base substrate 1111 为玻璃基板，所述第一金属层Is a glass substrate, the first metal layer 1212 材料可以选择元素周期表中第三周期至第七周期的各种金属。The material can be selected from various metals in the third to seventh periods of the periodic table.
具体地，为了使得所述显色板Specifically, in order to make the color rendering plate 33 上的光斑能够随着基板在不同的蚀刻阶段产生强弱变化，所述入射光源The spot on the light can change with the substrate in different etching stages. The incident light source 11 向所述待蚀刻的基板发射的入射光需要满足以下条件，当所述入射光照射到第一金属层The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 1212 上时，能够产生明显的反射光，当所述入射光照射到衬底基板When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 1111 上时大部分光线经过折射穿过所述衬底基板Most light passes through the base substrate after being refracted 1111 ，仅产生微弱的反射光甚至不产生反射光，详细来说，即所述入射光照射到第一金属层, Only weak reflected light or even no reflected light, in detail, that is, the incident light irradiates the first metal layer 1212 时，Time, 65%65% 以上的入射光被所述第一金属层The above incident light is taken by the first metal layer 1212 所反射；所述入射光照射到衬底基板Reflected; the incident light irradiates the base substrate 1111 时，Time, 65%65% 以上的入射光经折射穿过所述衬底基板The above incident light passes through the base substrate through refraction 1111 。.
从而如图Thus as shown 11 所示，在蚀刻开始时，所述入射光源As shown, at the beginning of the etching, the incident light source 11 向所述待蚀刻的基板发射的入射光，所述入射光照射到第一金属层Incident light emitted to the substrate to be etched, the incident light irradiating the first metal layer 1212 上，产生明显的第一反射光，所述第一反射光经过反射板On the top, obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 22 的反射后产生第二反射光，所述第二反射光照射到显色板After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 33 ，所述显色板, The color rendering board 33 上产生明显的光斑，随着蚀刻的进行，如图There is an obvious light spot on the surface, as the etching progresses, as shown in the figure 22 所示，当所述第一金属层As shown, when the first metal layer 1212 被完全蚀刻掉之后，所述入射光照射到衬底基板After being completely etched away, the incident light irradiates the base substrate 1111 上，大部分光线经过折射穿过所述衬底基板Most of the light passes through the base substrate through refraction 1111 ，几乎已经不存在第一反射光及第二反射光，显色板, There is almost no first reflected light and second reflected light, the color rendering plate 33 是明显的光斑也明显变弱甚至已经消失，所述显色板Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 33 上的光斑变弱甚至消失的瞬间即为所述第一金属层The moment when the light spot on the surface becomes weak or even disappears is the first metal layer 1212 的蚀刻终点，也即蚀刻时，所述光斑在所述显色板上先强后弱，所述光斑从强变至弱的时刻，为所述第一金属层The etching end point, that is, during etching, the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the first metal layer 1212 的蚀刻终点。End of the etch.
具体地，如图Specifically, as shown 33 至图To figure 55 所示，在本发明的第二实施例中，所述待蚀刻的基板包括：衬底基板As shown, in the second embodiment of the present invention, the substrate to be etched includes: a base substrate 1111 、位于所述衬底基板, Located on the base substrate 1111 上的第一金属层First metal layer 1212 及位于所述第一金属层And located in the first metal layer 1212 上的第二金属层Second metal layer 1313 。.
优选地，所述衬底基板Preferably, the base substrate 1111 为玻璃基板，所述第一金属层Is a glass substrate, the first metal layer 1212 和第二金属层And the second metal layer 1313 的材料可以选择元素周期表中第三周期至第七周期的各种金属。The material can be selected from various metals in the third to seventh periods of the periodic table.
具体地，为了使得所述显色板Specifically, in order to make the color rendering plate 33 上的光斑能够随着基板在不同的蚀刻阶段产生强弱变化，所述入射光源The spot on the light can change with the substrate in different etching stages. The incident light source 11 向所述待蚀刻的基板发射的入射光需要满足以下条件，当所述入射光照射到第一金属层The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 1212 上时，能够产生明显的反射光，当所述入射光照射到衬底基板When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 1111 上时大部分光线经过折射穿过所述衬底基板Most light passes through the base substrate after being refracted 1111 ，仅产生微弱的反射光甚至不产生反射光，当所述入射光照射到第二金属层, Only weak reflected light or even no reflected light, when the incident light irradiates the second metal layer 1313 上时，所述入射光大部分被所述第二金属层When on, most of the incident light is caused by the second metal layer 1313 所吸收，几乎不产生反射光，详细来说，述入射光源Absorbed, almost no reflected light, in detail, the incident light source 11 发出的入射光具有如下特性：所述入射光照射到第二金属层The incident light emitted has the following characteristics: the incident light irradiates the second metal layer 1313 时，Time, 65%65% 以上的入射光被所述第二金属层The above incident light is affected by the second metal layer 1313 所吸收；所述入射光照射到第一金属层Absorbed; the incident light irradiates the first metal layer 1212 时，Time, 65%65% 以上的入射光被所述第一金属层The above incident light is taken by the first metal layer 1212 所反射；所述入射光照射到衬底基板Reflected; the incident light irradiates the base substrate 1111 时，Time, 65%65% 以上的入射光经折射穿过所述衬底基板The above incident light passes through the base substrate through refraction 1111 。.
具体地，可通过设置所述入射光的谱线范围与第一金属层Specifically, the range of the spectral line of the incident light and the first metal layer can be set 1212 的反色光谱线存在交集属于第一金属层The intersection of the inverse spectral lines belongs to the first metal layer 1212 的反色光谱线的子集，同时入射光的谱线范围与第二金属膜A subset of the inverse spectral lines of 1313 的反色光谱线不存在交集，来实现所述入射光被所述第二金属层There is no intersection of the inverted color spectral lines to achieve that the incident light is captured by the second metal layer 1313 吸收和被第一金属层Absorbed and absorbed by the first metal layer 1212 反射的特性。Reflective characteristics.
从而如图Thus as shown 33 所示，在蚀刻开始时，所述入射光源As shown, at the beginning of the etching, the incident light source 11 向所述待蚀刻的基板发射的入射光，所述入射光照射到第二金属层Incident light emitted to the substrate to be etched, the incident light irradiating the second metal layer 1313 上，大部分光线被吸收，几乎不产生反射光，所述显色板Most of the light is absorbed and almost no reflected light is produced. 33 不存在明显的光斑甚至没有光斑，随着蚀刻的进行，如图There is no obvious light spot or even no light spot, as the etching progresses, as shown in the figure 44 所示，所述第二金属层As shown, the second metal layer 1313 被完全蚀刻掉，所述入射光照射到第一金属层Is completely etched away, the incident light irradiates the first metal layer 1212 上，产生明显的第一反射光，所述第一反射光经过反射板On the top, obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 22 的反射后产生第二反射光，所述第二反射光照射到显色板After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 33 ，所述显色板, The color rendering board 33 上产生明显的光斑，所述显色板Produces a noticeable light spot on the color rendering plate 33 产生明显的光斑的瞬间即为所述第二金属层The moment when an obvious light spot is generated is the second metal layer 1313 的蚀刻终点，进一步地，如图The etch endpoint, further, as shown 55 所示，当所述第一金属层As shown, when the first metal layer 1212 被完全蚀刻掉之后，所述入射光照射到衬底基板After being completely etched away, the incident light irradiates the base substrate 1111 上，大部分光线经过折射穿过所述衬底基板Most of the light passes through the base substrate through refraction 1111 ，几乎已经不存在第一反射光及第二反射光，显色板, There is almost no first reflected light and second reflected light, the color rendering plate 33 是明显的光斑也明显变弱甚至已经消失，所述显色板Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 33 上的光斑变弱甚至消失的瞬间即为所述第一金属层The moment when the light spot on the surface becomes weak or even disappears is the first metal layer 1212 的蚀刻终点，也即蚀刻时，所述光斑在所述显色板上先弱后强接着又弱，所述光斑从弱变至强的蚀刻，为第二金属层The etching end point, that is, when etching, the light spot on the color rendering board is weak first and then strong and then weak again, and the light spot is etched from weak to strong, which is the second metal layer 1313 的蚀刻终点，所述光斑从强又变至弱的时刻，为第一金属层The end point of the etching, the moment when the light spot changes from strong to weak, it is the first metal layer 1212 的蚀刻终点。End of the etch.
具体地，在本发明第一实施例和第二实施例中，所述待蚀刻的基板水平放置，所述入射光从所述待蚀刻的基板的上方照射到所述待蚀刻的基板上，待蚀刻的基板的位置不会移动，入射光照射到待蚀刻的基板也相对固定，产生的反射光的光路也相对固定，但在烧杯测试时，待蚀刻的基板被夹持着竖直地放入烧杯中进行测试，此时待蚀刻的基板可能会存在摆动，入射光照射到所述待蚀刻的基板上时，可能会产生多个反射点，并产生多条反射光，例如本发明的第三实施例。Specifically, in the first and second embodiments of the present invention, the substrate to be etched is placed horizontally, and the incident light is irradiated onto the substrate to be etched from above the substrate to be etched. The position of the etched substrate will not move, the incident light irradiating the substrate to be etched is also relatively fixed, and the optical path of the reflected light generated is also relatively fixed, but during the beaker test, the substrate to be etched is held vertically and held Test in the beaker. At this time, the substrate to be etched may have swings. When the incident light irradiates the substrate to be etched, multiple reflection points may be generated and multiple reflected lights may be generated, such as the third invention. Examples.
如图As shown 66 所示，在本发明的第三实施例中，所述待蚀刻的基板被夹持着竖直地放入烧杯中进行测试，所述待蚀刻的基板存在摆动，摆动幅度为±As shown, in the third embodiment of the present invention, the substrate to be etched is placed vertically into a beaker for testing, and the substrate to be etched has a swing with a swing amplitude of ± 1cm1cm ，所述入射光在三个摆动位置分别产生三条第一反射光，所述三条第一反射光经过反射片, The incident light generates three first reflected lights at three swing positions, and the three first reflected lights pass through the reflective sheet 22 的反射后产生三条第二反射光，此时为了避免摆动干扰显色板上的光斑的观察，在所述第三实施例中，还加入了凸透镜After reflection, three second reflected lights are generated. At this time, in order to avoid swinging interference with the observation of the light spot on the color rendering board, in the third embodiment, a convex lens is also added 44 ，所述凸透镜, The convex lens 44 设置于所述三条第二反射光的光路上，用于对所述三条第二反射光进行聚焦，同时所述显色板Disposed on the optical path of the three second reflected lights, for focusing the three second reflected lights, and at the same time the color rendering plate 33 设于所述凸透镜The convex lens 44 的焦点上，从而使得所述显色板On the focus, thus making the color rendering board 33 上的光斑仍为一个，保证所述光斑依然能够被有效的观察。There is still one spot on the top, which ensures that the spot can still be effectively observed.
优选地，所述第二反射光垂直到照射到所述显色板Preferably, the second reflected light is perpendicular to the color rendering plate 33 上，所述入射光源Above, the incident light source 11 发射的入射光为单色激光或经过选择性滤光技术处理后的光线。The incident light emitted is a monochromatic laser or light processed by selective filtering technology.
请参阅图Please refer to the picture 77 ，本发明提供一种蚀刻终点监控方法，包括：The present invention provides an etching endpoint monitoring method, including:
步骤step S1S1 、提供一蚀刻终点监控装置，包括入射光源、Provide an etching endpoint monitoring device, including incident light source 11 、反射镜,Reflector 22 及显色板And color plate 33 ；;
步骤step S2S2 、提供一待蚀刻的基板，并对所述待蚀刻的基板进行蚀刻，同时所述入射光源, Providing a substrate to be etched, and etching the substrate to be etched, and at the same time the incident light source 11 向待蚀刻的基板发射入射光；Emit incident light to the substrate to be etched;
步骤step S3S3 、将所述反射镜, The mirror 22 设置于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，以反射所述第一反射光，产生第二反射光照射至显色板It is arranged on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, to reflect the first reflected light, and generate second reflected light to irradiate the color rendering board 33 上；on;
步骤step S4S4 、所述显色板、The color rendering board 33 显示由所述第二反射光产生的光斑，并根据所述光斑的强弱变化，监控所述待蚀刻的基板的蚀刻终点。A light spot generated by the second reflected light is displayed, and the etching end point of the substrate to be etched is monitored according to the strength change of the light spot.
具体地，如图Specifically, as shown 11 至图To figure 22 所示，在本发明的第一实施例中，所述待蚀刻的基板包括：衬底基板As shown, in the first embodiment of the present invention, the substrate to be etched includes: a base substrate 1111 及位于所述衬底基板And located on the base substrate 1111 上的第一金属层First metal layer 1212 。.
优选地，所述衬底基板Preferably, the base substrate 1111 为玻璃基板，所述第一金属层Is a glass substrate, the first metal layer 1212 材料可以选择元素周期表中第三周期至第七周期的各种金属。The material can be selected from various metals in the third to seventh periods of the periodic table.
具体地，为了使得所述显色板Specifically, in order to make the color rendering plate 33 上的光斑能够随着基板在不同的蚀刻阶段产生强弱变化，所述入射光源The spot on the light can change with the substrate in different etching stages. The incident light source 11 向所述待蚀刻的基板发射的入射光需要满足以下条件，当所述入射光照射到第一金属层The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 1212 上时，能够产生明显的反射光，当所述入射光照射到衬底基板When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 1111 上时大部分光线经过折射穿过所述衬底基板Most light passes through the base substrate after being refracted 1111 ，仅产生微弱的反射光甚至不产生反射光，详细来说，即所述入射光照射到第一金属层, Only weak reflected light or even no reflected light, in detail, that is, the incident light irradiates the first metal layer 1212 时，Time, 65%65% 以上的入射光被所述第一金属层The above incident light is taken by the first metal layer 1212 所反射；所述入射光照射到衬底基板Reflected; the incident light irradiates the base substrate 1111 时，Time, 65%65% 以上的入射光经折射穿过所述衬底基板The above incident light passes through the base substrate through refraction 1111 。.
从而如图Thus as shown 11 所示，在蚀刻开始时，所述入射光源As shown, at the beginning of the etching, the incident light source 11 向所述待蚀刻的基板发射的入射光，所述入射光照射到第一金属层Incident light emitted to the substrate to be etched, the incident light irradiating the first metal layer 1212 上，产生明显的第一反射光，所述第一反射光经过反射板On the top, obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 22 的反射后产生第二反射光，所述第二反射光照射到显色板After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 33 ，所述显色板, The color rendering board 33 上产生明显的光斑，随着蚀刻的进行，如图There is an obvious light spot on the surface, as the etching progresses, as shown in the figure 22 所示，当所述第一金属层As shown, when the first metal layer 1212 被完全蚀刻掉之后，所述入射光照射到衬底基板After being completely etched away, the incident light irradiates the base substrate 1111 上，大部分光线经过折射穿过所述衬底基板Most of the light passes through the base substrate through refraction 1111 ，几乎已经不存在第一反射光及第二反射光，显色板, There is almost no first reflected light and second reflected light, the color rendering plate 33 是明显的光斑也明显变弱甚至已经消失，所述显色板Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 33 上的光斑变弱甚至消失的瞬间即为所述第一金属层The moment when the light spot on the surface becomes weak or even disappears is the first metal layer 1212 的蚀刻终点，也即蚀刻时，所述光斑在所述显色板上先强后弱，所述光斑从强变至弱的时刻，为所述第一金属层The etching end point, that is, during etching, the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the first metal layer 1212 的蚀刻终点。End of the etch.
具体地，如图Specifically, as shown 33 至图To figure 55 所示，在本发明的第二实施例中，所述待蚀刻的基板包括：衬底基板As shown, in the second embodiment of the present invention, the substrate to be etched includes: a base substrate 1111 、位于所述衬底基板, Located on the base substrate 1111 上的第一金属层First metal layer 1212 及位于所述第一金属层And located in the first metal layer 1212 上的第二金属层Second metal layer 1313 。.
优选地，所述衬底基板Preferably, the base substrate 1111 为玻璃基板，所述第一金属层Is a glass substrate, the first metal layer 1212 和第二金属层And the second metal layer 1313 的材料可以选择元素周期表中第三周期至第七周期的各种金属。The material can be selected from various metals in the third to seventh periods of the periodic table.
具体地，为了使得所述显色板Specifically, in order to make the color rendering plate 33 上的光斑能够随着基板在不同的蚀刻阶段产生强弱变化，所述入射光源The spot on the light can change with the substrate in different etching stages. The incident light source 11 向所述待蚀刻的基板发射的入射光需要满足以下条件，当所述入射光照射到第一金属层The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 1212 上时，能够产生明显的反射光，当所述入射光照射到衬底基板When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 1111 上时大部分光线经过折射穿过所述衬底基板Most light passes through the base substrate after being refracted 1111 ，仅产生微弱的反射光甚至不产生反射光，当所述入射光照射到第二金属层, Only weak reflected light or even no reflected light, when the incident light irradiates the second metal layer 1313 上时，所述入射光大部分被所述第二金属层When on, most of the incident light is caused by the second metal layer 1313 所吸收，几乎不产生反射光，详细来说，述入射光源Absorbed, almost no reflected light, in detail, the incident light source 11 发出的入射光具有如下特性：所述入射光照射到第二金属层The incident light emitted has the following characteristics: the incident light irradiates the second metal layer 1313 时，Time, 65%65% 以上的入射光被所述第二金属层The above incident light is affected by the second metal layer 1313 所吸收；所述入射光照射到第一金属层Absorbed; the incident light irradiates the first metal layer 1212 时，Time, 65%65% 以上的入射光被所述第一金属层The above incident light is taken by the first metal layer 1212 所反射；所述入射光照射到衬底基板Reflected; the incident light irradiates the base substrate 1111 时，Time, 65%65% 以上的入射光经折射穿过所述衬底基板The above incident light passes through the base substrate through refraction 1111 。.
具体地，可通过设置所述入射光的谱线范围与第一金属层Specifically, the range of the spectral line of the incident light and the first metal layer can be set 1212 的反色光谱线存在交集属于第一金属层The intersection of the inverse spectral lines belongs to the first metal layer 1212 的反色光谱线的子集，同时入射光的谱线范围与第二金属膜A subset of the inverse spectral lines of 1313 的反色光谱线不存在交集，来实现所述入射光被所述第二金属层There is no intersection of the inverted color spectral lines to achieve that the incident light is captured by the second metal layer 1313 吸收和被第一金属层Absorbed and absorbed by the first metal layer 1212 反射的特性。Reflective characteristics.
从而如图Thus as shown 33 所示，在蚀刻开始时，所述入射光源As shown, at the beginning of the etching, the incident light source 11 向所述待蚀刻的基板发射的入射光，所述入射光照射到第二金属层Incident light emitted to the substrate to be etched, the incident light irradiating the second metal layer 1313 上，大部分光线被吸收，几乎不产生反射光，所述显色板Most of the light is absorbed and almost no reflected light is produced. 33 不存在明显的光斑甚至没有光斑，随着蚀刻的进行，如图There is no obvious light spot or even no light spot, as the etching progresses, as shown in the figure 44 所示，所述第二金属层As shown, the second metal layer 1313 被完全蚀刻掉，所述入射光照射到第一金属层Is completely etched away, the incident light irradiates the first metal layer 1212 上，产生明显的第一反射光，所述第一反射光经过反射板On the top, obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 22 的反射后产生第二反射光，所述第二反射光照射到显色板After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 33 ，所述显色板, The color rendering board 33 上产生明显的光斑，所述显色板Produces a noticeable light spot on the color rendering plate 33 产生明显的光斑的瞬间即为所述第二金属层The moment when an obvious light spot is generated is the second metal layer 1313 的蚀刻终点，进一步地，如图The etch endpoint, further, as shown 55 所示，当所述第一金属层As shown, when the first metal layer 1212 被完全蚀刻掉之后，所述入射光照射到衬底基板After being completely etched away, the incident light irradiates the base substrate 1111 上，大部分光线经过折射穿过所述衬底基板Most of the light passes through the base substrate through refraction 1111 ，几乎已经不存在第一反射光及第二反射光，显色板, There is almost no first reflected light and second reflected light, the color rendering plate 33 是明显的光斑也明显变弱甚至已经消失，所述显色板Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 33 上的光斑变弱甚至消失的瞬间即为所述第一金属层The moment when the light spot on the surface becomes weak or even disappears is the first metal layer 1212 的蚀刻终点，也即蚀刻时，所述光斑在所述显色板上先弱后强接着又弱，所述光斑从弱变至强的蚀刻，为第二金属层The etching end point, that is, when etching, the light spot on the color rendering board is weak first and then strong and then weak again, and the light spot is etched from weak to strong, which is the second metal layer 1313 的蚀刻终点，所述光斑从强又变至弱的时刻，为第一金属层The end point of the etching, the moment when the light spot changes from strong to weak, it is the first metal layer 1212 的蚀刻终点。End of the etch.
具体地，在本发明第一实施例和第二实施例中，所述待蚀刻的基板水平放置，所述入射光从所述待蚀刻的基板的上方照射到所述待蚀刻的基板上，待蚀刻的基板的位置不会移动，入射光照射到待蚀刻的基板也相对固定，产生的反射光的光路也相对固定，但在烧杯测试时，待蚀刻的基板被夹持着竖直地放入烧杯中进行测试，此时待蚀刻的基板可能会存在摆动，入射光照射到所述待蚀刻的基板上时，可能会产生多个反射点，并产生多条反射光，例如本发明的第三实施例。Specifically, in the first and second embodiments of the present invention, the substrate to be etched is placed horizontally, and the incident light is irradiated onto the substrate to be etched from above the substrate to be etched. The position of the etched substrate will not move, the incident light irradiating the substrate to be etched is also relatively fixed, and the optical path of the reflected light generated is also relatively fixed, but during the beaker test, the substrate to be etched is held vertically and held Test in the beaker. At this time, the substrate to be etched may have swings. When the incident light irradiates the substrate to be etched, multiple reflection points may be generated and multiple reflected lights may be generated, such as the third invention. Examples.
如图As shown 66 所示，在本发明的第三实施例中，所述待蚀刻的基板被夹持着竖直地放入烧杯中进行测试，所述待蚀刻的基板存在摆动，摆动幅度为±As shown, in the third embodiment of the present invention, the substrate to be etched is placed vertically into a beaker for testing, and the substrate to be etched has a swing with a swing amplitude of ± 1cm1cm ，所述入射光在三个摆动位置分别产生三条第一反射光，所述三条第一反射光经过反射片, The incident light generates three first reflected lights at three swing positions, and the three first reflected lights pass through the reflective sheet 22 的反射后产生三条第二反射光，此时为了避免摆动干扰显色板上的光斑的观察，在所述第三实施例中，还加入了凸透镜After reflection, three second reflected lights are generated. At this time, in order to avoid swinging interference with the observation of the light spot on the color rendering board, in the third embodiment, a convex lens is also added 44 ，所述凸透镜, The convex lens 44 设置于所述三条第二反射光的光路上，用于对所述三条第二反射光进行聚焦，同时所述显色板Disposed on the optical path of the three second reflected lights, for focusing the three second reflected lights, and at the same time the color rendering plate 33 设于所述凸透镜The convex lens 44 的焦点上，从而使得所述显色板On the focus, thus making the color rendering board 33 上的光斑仍为一个，保证所述光斑依然能够被有效的观察。There is still one spot on the top, which ensures that the spot can still be effectively observed.
优选地，所述第二反射光垂直到照射到所述显色板Preferably, the second reflected light is perpendicular to the color rendering plate 33 上，所述入射光源Above, the incident light source 11 发射的入射光为单色激光或经过选择性滤光技术处理后的光线。The incident light emitted is a monochromatic laser or light processed by selective filtering technology.
综上所述，本发明提供一种蚀刻终点监控装置，包括：入射光源、反射镜及显色板；所述入射光源用于向待蚀刻的基板发射入射光；所述反射镜位于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，用于反射所述第一反射光，产生第二反射光照射至显色板上；所述显色板位于所述第二反射光的光路上，用于显示由所述第二反射光产生的光斑，利用待蚀刻的基板上不同膜层对所述入射光的反射特性的不同，使得显示板的光斑在不同的蚀刻阶段具有不同的强弱状态，从而能够根据所述光斑的强弱变化，快捷有效的监控蚀刻终点，促进蚀刻工艺的开发及蚀刻精度的提升。本发明还提供一种蚀刻终点监控方法，能够快捷有效的监控蚀刻终点，促进蚀刻工艺的开发及蚀刻精度的提升。In summary, the present invention provides an etching end point monitoring device, including: an incident light source, a reflector and a color rendering plate; the incident light source is used to emit incident light to the substrate to be etched; the reflector is located by the The substrate to be etched reflects the first reflected light on the optical path generated by the incident light, and is used to reflect the first reflected light and generate second reflected light to irradiate the color rendering plate; the color rendering plate is located on the first The optical path of the second reflected light is used to display the light spot generated by the second reflected light. The difference in the reflection characteristics of the incident light by different film layers on the substrate to be etched makes the light spot of the display panel etched in different ways The stages have different strength states, so that the etching end point can be monitored quickly and effectively according to the strength changes of the light spot, so as to promote the development of the etching process and the improvement of the etching accuracy. The invention also provides an etching endpoint monitoring method, which can quickly and effectively monitor the etching endpoint, promote the development of the etching process and improve the etching accuracy.
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。As mentioned above, for those of ordinary skill in the art, various other corresponding changes and modifications can be made according to the technical solutions and technical concepts of the present invention, and all these changes and modifications should fall within the protection scope of the claims of the present invention. .

Claims (10)

  1. 一种蚀刻终点监控装置，包括：入射光源、反射镜及显色板；An etching end point monitoring device, including: an incident light source, a reflecting mirror and a color rendering board;
    所述入射光源用于向待蚀刻的基板发射入射光；The incident light source is used to emit incident light to the substrate to be etched;
    所述反射镜位于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，用于反射所述第一反射光，产生第二反射光照射至显色板上；The reflector is located on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, and is used to reflect the first reflected light and generate second reflected light to irradiate the color rendering board;
    所述显色板位于所述第二反射光的光路上，用于显示由所述第二反射光产生的光斑，以根据所述光斑的强弱变化，监控所述待蚀刻的基板的蚀刻终点。The color rendering plate is located on the optical path of the second reflected light, and is used to display the light spot generated by the second reflected light, so as to monitor the etching end point of the substrate to be etched according to the intensity change of the light spot .
  2. 如权利要求1所述的蚀刻终点监控装置，其中，所述待蚀刻的基板包括：衬底基板及位于所述衬底基板上的第一金属层；The etching endpoint monitoring device according to claim 1, wherein the substrate to be etched comprises: a base substrate and a first metal layer on the base substrate;
    所述入射光源发出的入射光具有如下特性：所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
    蚀刻时，所述光斑在所述显色板上先强后弱，所述光斑从强变至弱的时刻，为所述第一金属层的蚀刻终点。During etching, the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
  3. 如权利要求1所述的蚀刻终点监控装置，其中，所述待蚀刻的基板包括：衬底基板、位于所述衬底基板上的第一金属层及位于所述第一金属层上的第二金属层；The etch endpoint monitoring device according to claim 1, wherein the substrate to be etched comprises: a base substrate, a first metal layer on the base substrate, and a second metal layer on the first metal layer Metal layer
    所述入射光源发出的入射光具有如下特性：所述入射光照射到第二金属层时，65%以上的入射光被所述第二金属层所吸收；所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
    蚀刻时，所述光斑在所述显色板上先弱后强接着又弱，所述光斑从弱变至强的蚀刻，为第二金属层的蚀刻终点，所述光斑从强又变至弱的时刻，为第一金属层的蚀刻终点。During the etching, the light spot is weak first, then strong, and then weak on the color rendering board. The light spot is etched from weak to strong, which is the end point of the etching of the second metal layer, and the light spot is changed from strong to weak Is the end point of the etching of the first metal layer.
  4. 如权利要求1所述的蚀刻终点监控装置，还包括：位于所述第二反射光的光路上的凸透镜，所述凸透镜用于将所述第二反射光进行聚焦，所述显色板位于所述凸透镜的焦点处。The etching end point monitoring device according to claim 1, further comprising: a convex lens located on the optical path of the second reflected light, the convex lens is used to focus the second reflected light, and the color rendering plate is located on the Describe the focal point of the convex lens.
  5. 如权利要求1所述的蚀刻终点监控装置，其中，所述入射光源发射的入射光为单色激光或经过选择性滤光技术处理后的光线。The etch endpoint monitoring device according to claim 1, wherein the incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
  6. 一种蚀刻终点监控方法，包括：An etching end point monitoring method, including:
    步骤S1、提供一蚀刻终点监控装置，包括入射光源、反射镜及显色板；Step S1: Provide an etching end point monitoring device, including an incident light source, a reflecting mirror and a color rendering plate;
    步骤S2、提供一待蚀刻的基板，并对所述待蚀刻的基板进行蚀刻，同时所述入射光源向待蚀刻的基板发射入射光；Step S2, providing a substrate to be etched, and etching the substrate to be etched, and the incident light source emits incident light toward the substrate to be etched;
    步骤S3、将所述反射镜设置于由所述待蚀刻的基板反射所述入射光产生的第一反射光的光路上，以反射所述第一反射光，产生第二反射光照射至显色板上；Step S3: Set the mirror on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light to reflect the first reflected light and generate second reflected light to irradiate the color On board
    步骤S4、所述显色板显示由所述第二反射光产生的光斑，并根据所述光斑的强弱变化，监控所述待蚀刻的基板的蚀刻终点。Step S4: The color rendering plate displays a light spot generated by the second reflected light, and monitors the etching end point of the substrate to be etched according to the strength change of the light spot.
  7. 如权利要求6所述的蚀刻终点监控方法，其中，所述步骤S2中，待蚀刻的基板包括：衬底基板及位于所述衬底基板上的第一金属层；The etching endpoint monitoring method according to claim 6, wherein in step S2, the substrate to be etched comprises: a base substrate and a first metal layer on the base substrate;
    所述入射光源发出的入射光具有如下特性：所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
    所述步骤S4中，所述光斑在所述显色板上先强后弱，所述光斑从强变至弱的时刻，为所述第一金属层的蚀刻终点。In the step S4, the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
  8. 如权利要求6所述的蚀刻终点监控方法，其中，所述步骤S2中，所述待蚀刻的基板包括：衬底基板、位于所述衬底基板上的第一金属层、及位于所述第一金属层上的第二金属层；The etching endpoint monitoring method according to claim 6, wherein in the step S2, the substrate to be etched comprises: a base substrate, a first metal layer on the base substrate, and a A second metal layer on a metal layer;
    所述入射光源发出的入射光具有如下特性：所述入射光照射到第二金属层时，65%以上的入射光被所述第二金属层所吸收；所述入射光照射到第一金属层时，65%以上的入射光被所述第一金属层所反射；所述入射光照射到衬底基板时，65%以上的入射光经折射穿过所述衬底基板；The incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
    所述步骤S4中，所述光斑在所述显色板上先弱后强接着又弱，所述光斑从弱变至强的蚀刻，为第二金属层的蚀刻终点，所述光斑从强又变至弱的时刻，为第一金属层的蚀刻终点。In the step S4, the light spot is weak first, then strong, and then weak on the color rendering board. The light spot is etched from weak to strong, which is the end point of the etching of the second metal layer. The moment when it becomes weak is the end point of the etching of the first metal layer.
  9. 如权利要求6所述的蚀刻终点监控方法，其中，所述步骤S1中提供的蚀刻终点监控装置还包括：凸透镜；The etching endpoint monitoring method according to claim 6, wherein the etching endpoint monitoring device provided in step S1 further comprises: a convex lens;
    所述步骤S3中的第二反射光在照射到所述显色板上之前还需要经过所述凸透镜的聚焦；The second reflected light in step S3 needs to be focused by the convex lens before being irradiated to the color rendering board;
    所述步骤S4中，所述显色板位于所述凸透镜的焦点处，以显示由聚焦后的第二反射光产生的光斑。In the step S4, the color rendering plate is located at the focal point of the convex lens to display the light spot generated by the focused second reflected light.
  10. 如权利要求6所述的蚀刻终点监控方法，其中，所述入射光源发射的入射光为单色激光或经过选择性滤光技术处理后的光线。The etching end point monitoring method according to claim 6, wherein the incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
     A
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