WO2020122698A3 - 디스플레이 장치 및 반도체 발광소자의 자가조립 방법 - Google Patents

디스플레이 장치 및 반도체 발광소자의 자가조립 방법 Download PDF

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WO2020122698A3
WO2020122698A3 PCT/KR2020/004553 KR2020004553W WO2020122698A3 WO 2020122698 A3 WO2020122698 A3 WO 2020122698A3 KR 2020004553 W KR2020004553 W KR 2020004553W WO 2020122698 A3 WO2020122698 A3 WO 2020122698A3
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semiconductor light
emitting elements
electrode
display device
self
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PCT/KR2020/004553
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French (fr)
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WO2020122698A2 (ko
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김정훈
조현우
허미희
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엘지전자 주식회사
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Priority to EP20732459.1A priority Critical patent/EP3989284A4/en
Publication of WO2020122698A2 publication Critical patent/WO2020122698A2/ko
Publication of WO2020122698A3 publication Critical patent/WO2020122698A3/ko

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    • HELECTRICITY
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    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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Abstract

본 발명은 복수의 반도체 발광소자들, 상기 반도체 발광소자들에 전기신호를 공급하도록 상기 반도체 발광소자들에서 각각 연장되는 제1배선전극 및 제2배선전극, 상기 기판 상에서 배치되며, 전류가 공급되면 전기장을 생성하는 제1전극 및 제2전극을 구비하는 복수의 페어 전극들 및 상기 페어 전극들을 덮도록 형성되는 유전체층을 포함하고, 상기 제1배선전극과 제2배선전극은 상기 반도체 발광소자들을 기준으로 상기 복수의 페어 전극들의 반대측에 형성되고, 상기 유전체층 및 상기 반도체 발광소자들 사이에 배치되며, 상기 유전체층 및 상기 반도체 발광소자들 각각과 공유결합을 형성하는 공유결합층을 더 포함하는 것을 특징으로 하는 디스플레이 장치를 제공한다.
PCT/KR2020/004553 2019-06-20 2020-04-03 디스플레이 장치 및 반도체 발광소자의 자가조립 방법 WO2020122698A2 (ko)

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Application Number Priority Date Filing Date Title
EP20732459.1A EP3989284A4 (en) 2019-06-20 2020-04-03 DISPLAY DEVICE AND SELF-ASSEMBLY METHOD FOR SEMICONDUCTOR ELECTROLUMINESCENT DEVICE

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KR10-2019-0073654 2019-06-20
KR1020190073654A KR20200026679A (ko) 2019-06-20 2019-06-20 디스플레이 장치 및 반도체 발광소자의 자가조립 방법

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WO2020122698A3 true WO2020122698A3 (ko) 2020-09-03

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US (2) US11374150B2 (ko)
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200026679A (ko) 2019-06-20 2020-03-11 엘지전자 주식회사 디스플레이 장치 및 반도체 발광소자의 자가조립 방법
CN110416124B (zh) * 2019-07-05 2020-10-13 深超光电(深圳)有限公司 Led的转移方法及led显示面板的制备方法
KR20210142791A (ko) 2020-05-18 2021-11-26 삼성디스플레이 주식회사 표면 개질용 리간드, 이를 포함하는 발광 소자, 및 표시 장치의 제조 방법
CN113763818B (zh) * 2021-09-07 2023-06-02 武汉华星光电技术有限公司 显示装置
WO2023146000A1 (ko) * 2022-01-27 2023-08-03 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 그 제조 방법
WO2024080390A1 (ko) * 2022-10-11 2024-04-18 엘지전자 주식회사 반도체 발광소자를 포함하는 디스플레이 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130093528A (ko) * 2010-08-06 2013-08-22 셈프리어스 아이엔씨. 인쇄가능한 화합물 반도체 장치를 박리시키기 위한 물질 및 방법
US20140361409A1 (en) * 2006-09-20 2014-12-11 The Board Of Trustees Of The University Of Illinois Release Strategies for Making Transferable Semiconductor Structures, Devices and Device Components
KR20160098431A (ko) * 2013-12-17 2016-08-18 도쿄엘렉트론가부시키가이샤 기판 상의 자가조립 단층 또는 주기적 유기실리케이트의 스핀온 코팅을 위한 시스템 및 방법
KR20180030454A (ko) * 2016-09-15 2018-03-23 일룩스 아이엔씨. 발광 표시 장치의 유체 조립 시스템 및 방법
KR20180070506A (ko) * 2016-11-14 2018-06-26 보에 테크놀로지 그룹 컴퍼니 리미티드 양자점 발광 다이오드 및 그의 제조 방법, 디스플레이 패널 및 디스플레이 장치
KR20200026679A (ko) * 2019-06-20 2020-03-11 엘지전자 주식회사 디스플레이 장치 및 반도체 발광소자의 자가조립 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100087932A (ko) * 2009-01-29 2010-08-06 삼성전기주식회사 자기 조립 단분자막을 이용한 다이 어태치 방법 및 자기 조립 단분자막을 이용하여 다이가 어태치된 패키지 기판
EP2424941B1 (en) * 2009-05-01 2017-05-31 Nanosys, Inc. Functionalized matrixes for dispersion of nanostructures
US9825202B2 (en) 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
US10543486B2 (en) * 2014-10-31 2020-01-28 eLux Inc. Microperturbation assembly system and method
US9711443B2 (en) * 2015-11-14 2017-07-18 Intel Corporation Magnetic alignment for flip chip microelectronic devices
KR102581666B1 (ko) * 2018-08-24 2023-09-22 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140361409A1 (en) * 2006-09-20 2014-12-11 The Board Of Trustees Of The University Of Illinois Release Strategies for Making Transferable Semiconductor Structures, Devices and Device Components
KR20130093528A (ko) * 2010-08-06 2013-08-22 셈프리어스 아이엔씨. 인쇄가능한 화합물 반도체 장치를 박리시키기 위한 물질 및 방법
KR20160098431A (ko) * 2013-12-17 2016-08-18 도쿄엘렉트론가부시키가이샤 기판 상의 자가조립 단층 또는 주기적 유기실리케이트의 스핀온 코팅을 위한 시스템 및 방법
KR20180030454A (ko) * 2016-09-15 2018-03-23 일룩스 아이엔씨. 발광 표시 장치의 유체 조립 시스템 및 방법
KR20180070506A (ko) * 2016-11-14 2018-06-26 보에 테크놀로지 그룹 컴퍼니 리미티드 양자점 발광 다이오드 및 그의 제조 방법, 디스플레이 패널 및 디스플레이 장치
KR20200026679A (ko) * 2019-06-20 2020-03-11 엘지전자 주식회사 디스플레이 장치 및 반도체 발광소자의 자가조립 방법

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US11715812B2 (en) 2023-08-01
KR20200026679A (ko) 2020-03-11
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US20220302342A1 (en) 2022-09-22

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