WO2020113755A1 - Oled 显示面板及 oled 显示装置 - Google Patents

Oled 显示面板及 oled 显示装置 Download PDF

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Publication number
WO2020113755A1
WO2020113755A1 PCT/CN2019/070466 CN2019070466W WO2020113755A1 WO 2020113755 A1 WO2020113755 A1 WO 2020113755A1 CN 2019070466 W CN2019070466 W CN 2019070466W WO 2020113755 A1 WO2020113755 A1 WO 2020113755A1
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Prior art keywords
layer
light absorber
oled display
pixel definition
display panel
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PCT/CN2019/070466
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English (en)
French (fr)
Inventor
夏冲冲
余威
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/463,805 priority Critical patent/US10937995B2/en
Publication of WO2020113755A1 publication Critical patent/WO2020113755A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present application relates to a display technology, in particular to an OLED display panel and an OLED display device.
  • the OLED display panel includes a gate metal layer and a source-drain metal layer.
  • OLED Organic Light Emitting Diode
  • the OLED display panel includes a gate metal layer and a source-drain metal layer.
  • external light is irradiated downward through the organic light-emitting layer of the display panel.
  • the gate metal layer and the source-drain metal layer When the light encounters the gate metal layer and the source-drain metal layer, it will be reflected, and the reflected light will pass upward through the organic light emitting layer and exit the screen. This will cause the light emitted by the organic light-emitting layer and the reflected light to coexist, affect the light-emitting effect of the OLED display panel, and cause visual confusion.
  • Embodiments of the present application provide an OLED display panel and an OLED display device to solve the problem in the existing OLED display panel that the reflection of the gate metal layer and the source-drain metal layer encountered by external light causes the reflected light and the organic light-emitting layer to emit The confusing light causes the technical problem of poor light output of the OLED display panel.
  • An embodiment of the present application provides an OLED display panel, which includes:
  • a TFT array functional layer which is provided on the substrate
  • a flat layer provided on the array functional layer
  • the pixel definition layer is provided on the anode
  • the flat layer and/or the pixel definition layer include a light absorber for absorbing external light irradiated into the OLED display panel, and the light absorber is doped in the flat layer and/or the pixel definition layer Inside;
  • the material of the light absorber is one or at least two different materials of carbon nanotubes, nickel-iron alloys and benzothiophene chemicals;
  • the particle size of the light absorber is smaller than the thickness of the flat layer; when the pixel definition layer is doped with the light absorber, the size of the light absorber The particle size is smaller than the thickness of the pixel definition layer.
  • the particle size of the light absorber is less than or equal to one third of the thickness of the flat layer.
  • the light absorbers are evenly distributed in the flat layer and/or the pixel definition layer.
  • the doping ratio of the light absorber and the flat layer is less than or equal to 35:100; when the pixel definition layer is doped When the light absorber is mixed, the doping ratio of the light absorber and the pixel definition layer is less than or equal to 35:100.
  • the TFT array functional layer includes an active layer, a first insulating layer, a first gate metal layer, a second insulating layer, and a second gate metal that are sequentially arranged on the substrate Layer, interlayer dielectric layer and source-drain metal layer.
  • An embodiment of the present application further provides an OLED display panel, which includes:
  • a TFT array functional layer which is provided on the substrate
  • a flat layer provided on the array functional layer
  • the pixel definition layer is provided on the anode
  • the flat layer and/or the pixel definition layer include a light absorber for absorbing external light irradiated into the OLED display panel, and the light absorber is doped in the flat layer and/or the pixel definition layer Inside.
  • the particle size of the light absorber when the flat layer is doped with the light absorber, the particle size of the light absorber is smaller than the thickness of the flat layer; when the pixel definition layer is doped with the In the case of a light absorber, the particle size of the light absorber is smaller than the thickness of the pixel definition layer.
  • the particle size of the light absorber is less than or equal to one third of the thickness of the flat layer.
  • the light absorbers are evenly distributed in the flat layer and/or the pixel definition layer.
  • the doping ratio of the light absorber and the flat layer is less than or equal to 35:100; when the pixel definition layer is doped When the light absorber is mixed, the doping ratio of the light absorber and the pixel definition layer is less than or equal to 35:100.
  • the material of the light absorber is one or at least two different materials of chemical substances such as carbon nanotubes, nickel-iron alloys and benzothiophenes.
  • the TFT array functional layer includes an active layer, a first insulating layer, a first gate metal layer, a second insulating layer, and a second gate metal that are sequentially arranged on the substrate Layer, interlayer dielectric layer and source-drain metal layer.
  • the present application also relates to an OLED display device, which includes an OLED display panel, and the OLED display panel includes:
  • a TFT array functional layer which is provided on the substrate
  • a flat layer provided on the array functional layer
  • the pixel definition layer is provided on the anode
  • the flat layer and/or the pixel definition layer include a light absorber for absorbing external light irradiated into the OLED display panel, and the light absorber is doped in the flat layer and/or the pixel definition layer Inside.
  • the particle size of the light absorber when the flat layer is doped with the light absorber, the particle size of the light absorber is smaller than the thickness of the flat layer; when the pixel definition layer is doped with the In the case of a light absorber, the particle size of the light absorber is smaller than the thickness of the pixel definition layer.
  • the particle size of the light absorber is less than or equal to one third of the thickness of the flat layer.
  • the light absorber is uniformly distributed in the flat layer and/or the pixel definition layer.
  • the doping ratio of the light absorber and the flat layer is less than or equal to 35:100; when the pixel definition layer is doped When the light absorber is mixed, the doping ratio of the light absorber and the pixel definition layer is less than or equal to 35:100.
  • the material of the light absorber is one or at least two different materials of chemical substances such as carbon nanotubes, nickel-iron alloys, and benzothiophenes.
  • the TFT array functional layer includes an active layer, a first insulating layer, a first gate metal layer, a second insulating layer, and a second gate metal that are sequentially arranged on the substrate Layer, interlayer dielectric layer and source-drain metal layer.
  • the OLED display panel and the OLED display device of the present application dope the flat layer and/or the pixel definition layer with light absorbing materials to absorb the external light entering the OLED display panel and reduce the external light
  • the metal layer of the array functional layer is irradiated to reflect, thereby reducing the influence of the reflected light on the light emitted by the organic light-emitting layer, improving the clarity of the OLED display panel, and reducing the visual confusion of the OLED display panel; solving the existing OLED display panel
  • the gate metal layer and the source-drain metal layer encountered by the external light are reflected, which causes the reflected light to be confused with the light emitted by the organic light-emitting layer, resulting in a technical problem that the light emitting effect of the OLED display panel is poor.
  • FIG. 1 is a schematic structural diagram of a first embodiment of an OLED display panel of this application.
  • FIG. 2 is a schematic structural diagram of a second embodiment of an OLED display panel of this application.
  • FIG. 3 is a schematic structural diagram of a third embodiment of an OLED display panel of the present application.
  • the OLED display panel includes a substrate, a thin film transistor (Thin Film Transistor, TFT) array functional layer, a flat layer, an anode, a pixel definition layer, and a spacer.
  • TFT Thin Film Transistor
  • the TFT array functional layer is provided on the substrate.
  • the flat layer is provided on the array functional layer.
  • the anode is provided on the flat layer.
  • the pixel definition layer is provided on the anode.
  • the flat layer and/or the pixel definition layer include a light absorber for absorbing external light irradiated to the OLED display panel, and the light absorber is doped in the flat layer and/or the pixel definition layer. That is, the light absorber may be doped in the flat layer (first embodiment), or in the pixel definition layer (second embodiment), or in the flat layer and the pixel definition layer (third embodiment) .
  • FIG. 1 is a schematic structural diagram of a first embodiment of an OLED display panel of the present application.
  • the OLED display panel 100 of the first embodiment of the present application includes a substrate 11, a TFT array functional layer 12, a flat layer 13, an anode 14, a pixel definition layer 15, and a spacer 16.
  • the TFT array functional layer 12 is provided on the substrate 11.
  • the flat layer 13 is provided on the array functional layer 12.
  • the anode 14 is provided on the flat layer 13.
  • the pixel definition layer 15 is provided on the anode 14.
  • the spacer 16 is provided on the pixel definition layer 15.
  • the flat layer 13 includes a light absorber 131 for absorbing external light irradiated to the OLED display panel 100, and the light absorber 131 is doped in the flat layer 13.
  • the light absorber 131 doped in the flat layer 13 will absorb most of the light, so that only a small part of the light can be irradiated downward
  • the metal layers such as the first gate metal layer 123 and the second gate metal layer 125 in the TFT array functional layer 12
  • only a very small amount of reflected light is finally emitted, making the light emitted by the organic light-emitting layer clearer and more efficient, reducing The visual confusion of OLED panels.
  • the process of forming the flat layer 13 is as follows: first, the flat layer raw material is prepared, and the flat layer raw material is a solution with a high concentration, and then the light absorber 131 is mixed in the flat layer raw material and mixed uniformly; then the mixed solution is coated on the TFT array Functional layer 12. Finally, the mixed solution is dried to form the flat layer 13.
  • the doping ratio of the light absorber 131 and the flat layer 13 is 35:100 or less. That is, the ratio of the light absorber 131 and the mixed solution after drying (flat layer 13) is 35:100 or less. In order to ensure a good light absorption effect of the light absorber 131, the doping ratio of the light absorber 131 and the flat layer 13 is greater than or equal to 1:10.
  • the material of the light absorber 131 is one or at least two different materials of carbon nanotubes, nickel-iron alloys, and benzothiophene-based chemicals. That is, the light absorber 131 may be a single carbon nanotube, nickel-iron alloy, and benzothiophene-based chemical substance, or the light absorber 131 of two different materials may be doped in the flat layer 13, or the light absorber of three different materials The body 131 is doped in the flat layer 13.
  • the particle size of the light absorber 131 is smaller than the thickness of the flat layer 13. This arrangement facilitates the formation of the flat layer 13.
  • the particle size of the light absorbing body 131 is less than or equal to one third of the thickness of the flat layer 13.
  • the function of the flat layer 13 is to flatten the top surface of the TFT array functional layer 12 so that the anode 14 is formed. Therefore, the flat layer 13 must have a certain leveling property. Therefore, when the particle diameter of the light absorber 131 is less than or equal to one third of the thickness of the flat layer 13, the flattening effect of the flat layer 13 is improved.
  • the light absorber 131 is uniformly distributed in the flat layer 13. This arrangement facilitates film formation of the flat layer 13 on the one hand, and on the other hand, improves the light absorption effect of the light absorber 131 in the flat layer 13.
  • the TFT array functional layer includes an active layer 121, a first insulating layer 122, a first gate metal layer 123, a second insulating layer 124, a The second gate metal layer 125, the interlayer dielectric layer 126 and the source-drain metal layer 127.
  • the OLED display panel 200 of the second embodiment includes a substrate 21, a TFT array functional layer 22, a flat layer 23, an anode 24, a pixel definition layer 25 and a spacer 26.
  • the difference between this second embodiment and the first embodiment lies in:
  • the pixel definition layer 25 includes a light absorber 251 for absorbing external light irradiated to the OLED display panel 200, and the light absorber 251 is doped in the pixel definition layer 25.
  • the light absorber 251 doped in the pixel definition layer 25 will absorb most of the light, so that only a small part of the light can be downward
  • the first gate metal layer, the second gate metal layer and other metal layers irradiated to the TFT array functional layer 22 finally emit only a very small amount of reflected light, which makes the light emitted by the organic light-emitting layer clearer and more efficient, reducing OLED The visual confusion of the panel.
  • the process of forming the pixel definition layer 25 is as follows: first, the pixel definition layer raw material is prepared, and the pixel definition layer raw material is a solution with a higher concentration; then, the light absorber 251 is mixed in the pixel definition layer raw material, and mixed uniformly to form a mixed solution; This mixed solution is coated on the anode 24. Finally, the mixed solution is dried to form the pixel definition layer 25.
  • the doping ratio of the light absorber 251 and the pixel definition layer 25 is 35:100 or less. That is, the ratio of the light absorber 251 and the mixed solution after drying (pixel definition layer 24) is 35:100 or less. In order to ensure a good light absorption effect of the light absorber 251, the doping ratio of the light absorber 251 and the pixel definition layer 25 is greater than or equal to 1:10.
  • the particle diameter of the light absorber 251 is smaller than the thickness of the pixel definition layer 25. Such an arrangement facilitates the formation of the pixel definition layer 25.
  • the light absorber 251 is evenly distributed in the pixel definition layer 25 to improve the light absorption effect of the light absorber 251.
  • the OLED display panel 300 of the third embodiment includes a substrate 31, a TFT array functional layer 32, a flat layer 33, an anode 34, a pixel definition layer 35, and a spacer 36.
  • the difference between this third embodiment and the first embodiment lies in:
  • the flat layer 33 and the pixel definition layer 35 include a light absorber for absorbing external light irradiated to the OLED display panel 300, and the light absorber is doped in the flat layer 33 and the pixel definition layer 35.
  • the light absorber in the flat layer 33 is the first light absorber 331.
  • the light absorber in the pixel definition layer 35 is the second light absorber 351.
  • the flat layer 33 and the pixel definition layer 35 are doped with light absorbers, thereby improving the absorption effect of external light.
  • the structure of the first light absorber 331 of the flat layer 33 is the same as the structure of the light absorber in the first embodiment. For details, please refer to the content of the first embodiment.
  • the structure of the second light absorber 351 of the pixel definition layer 35 is the same as the structure of the light absorber in the second embodiment. For details, please refer to the content of the second embodiment.
  • the present application also relates to an OLED display device, which includes an OLED display panel, and the OLED display panel includes:
  • a TFT array functional layer which is provided on the substrate
  • a flat layer provided on the array functional layer
  • the pixel definition layer is provided on the anode
  • the flat layer and/or the pixel definition layer include a light absorber for absorbing external light irradiated into the OLED display panel, and the light absorber is doped in the flat layer and/or the pixel definition layer Inside.
  • the particle size of the light absorber when the flat layer is doped with the light absorber, the particle size of the light absorber is smaller than the thickness of the flat layer; when the pixel definition layer is doped with the In the case of a light absorber, the particle size of the light absorber is smaller than the thickness of the pixel definition layer.
  • the particle size of the light absorber is less than or equal to one third of the thickness of the flat layer.
  • the light absorber is uniformly distributed in the flat layer and/or the pixel definition layer.
  • the doping ratio of the light absorber and the flat layer is less than or equal to 35:100; when the pixel definition layer is doped When the light absorber is mixed, the doping ratio of the light absorber and the pixel definition layer is less than or equal to 35:100.
  • the material of the light absorber is one or at least two different materials of chemical substances such as carbon nanotubes, nickel-iron alloys, and benzothiophenes.
  • the TFT array functional layer includes an active layer, a first insulating layer, a first gate metal layer, a second insulating layer, and a second gate metal that are sequentially arranged on the substrate Layer, interlayer dielectric layer and source-drain metal layer.
  • the OLED display panel and the OLED display device of the present application dope the flat layer and/or the pixel definition layer with light absorbing materials to absorb the external light entering the OLED display panel and reduce the external light
  • the metal layer of the array functional layer is irradiated to reflect, thereby reducing the influence of the reflected light on the light emitted by the organic light-emitting layer, improving the clarity of the OLED display panel, and reducing the visual confusion of the OLED display panel; solving the existing OLED display panel
  • the gate metal layer and the source-drain metal layer encountered by the external light are reflected, which causes the reflected light to be confused with the light emitted by the organic light-emitting layer, resulting in a technical problem that the light emitting effect of the OLED display panel is poor.

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Abstract

本申请提供一种OLED显示面板及OLED显示装置，包括基板、TFT阵列功能层、设置在阵列功能层上的平坦层、阳极和设置在阳极上的像素定义层，平坦层和/或像素定义层包括有用于吸收照射入OLED显示面板外来光的吸光体，吸光体掺杂在平坦层和/或像素定义层内。

Description

OLED显示面板及OLED显示装置 技术领域
本申请涉及一种显示技术，特别涉及一种OLED显示面板及OLED显示装置。
 背景技术
在有机发光二极管（Organic Light Emitting Diode，OLED）显示面板中，OLED显示面板包括有栅极金属层和源漏极金属层。OLED显示面板在使用的过程中，外来光线透过显示面板的有机发光层向下照射。当光线遇到栅极金属层、源漏极金属层时会发生反射，反射光线向上透过有机发光层射出屏幕。这样会造成有机发光层发出的光和反射光同时存在，影响OLED显示面板的出光效果，造成视觉混淆。
 技术问题
本申请实施例提供一种OLED显示面板及OLED显示装置，以解决现有的OLED显示面板中，外来光线遇到的栅极金属层和源漏金属层发生反射，导致反射光线和有机发光层发出光线混淆，造成OLED显示面板的出光效果较差的技术问题。
 技术解决方案
本申请实施例提供一种OLED显示面板，其包括：
基板；
TFT阵列功能层，设置在所述基板上；
平坦层，设置在所述阵列功能层上；
阳极，设置在所述平坦层上；以及
像素定义层，设置在所述阳极上；
其中，所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体，所述吸光体掺杂在所述平坦层和/或所述像素定义层内；
所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料；
当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于所述平坦层的厚度；当所述像素定义层掺杂有所述吸光体时，所述吸光体的粒径小于所述像素定义层的厚度。
在本申请的OLED显示面板中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
在本申请的OLED显示面板中，所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示面板中，当所述平坦层内掺杂有所述吸光体时，所述吸光体和所述平坦层的掺杂比例小于等于35:100；当所述像素定义层掺杂有所述吸光体时，所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
在本申请的OLED显示面板中，所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
本申请实施例还提供一种OLED显示面板，其包括：
基板；
TFT阵列功能层，设置在所述基板上；
平坦层，设置在所述阵列功能层上；
阳极，设置在所述平坦层上；以及
像素定义层，设置在所述阳极上；
其中，所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体，所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示面板中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于所述平坦层的厚度；当所述像素定义层掺杂有所述吸光体时，所述吸光体的粒径小于所述像素定义层的厚度。
在本申请的OLED显示面板中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
在本申请的OLED显示面板中，所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示面板中，当所述平坦层内掺杂有所述吸光体时，所述吸光体和所述平坦层的掺杂比例小于等于35:100；当所述像素定义层掺杂有所述吸光体时，所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
在本申请的OLED显示面板中，所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
在本申请的OLED显示面板中，所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
本申请还涉及一种OLED显示装置，其包括OLED显示面板，所述OLED显示面板包括：
基板；
TFT阵列功能层，设置在所述基板上；
平坦层，设置在所述阵列功能层上；
阳极，设置在所述平坦层上；
像素定义层，设置在所述阳极上；
其中，所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体，所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于所述平坦层的厚度；当所述像素定义层掺杂有所述吸光体时，所述吸光体的粒径小于所述像素定义层的厚度。
在本申请的OLED显示装置中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
在本申请的OLED显示装置中，所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中，当所述平坦层内掺杂有所述吸光体时，所述吸光体和所述平坦层的掺杂比例小于等于35:100；当所述像素定义层掺杂有所述吸光体时，所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
在本申请的OLED显示装置中，所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
在本申请的OLED显示装置中，所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
 有益效果
相较于现有技术的显示面板，本申请的OLED显示面板和OLED显示装置通过在平坦层和/或像素定义层中掺杂吸光材料，以吸收射入OLED显示面板的外来光线，减少外来光线照射到阵列功能层的金属层从而发生反射，进而减弱反射光对有机发光层发出光的影响，提高OLED显示面板的清晰度，降低OLED显示面板的视觉混淆；解决了现有的OLED显示面板中，外来光线遇到的栅极金属层和源漏金属层发生反射，导致反射光线和有机发光层发出光线混淆，造成OLED显示面板的出光效果较差的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请的OLED显示面板的第一实施例的结构示意图；
图2为本申请的OLED显示面板的第二实施例的结构示意图；
图3为本申请的OLED显示面板的第三实施例的结构示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
在本申请的OLED显示面板中，OLED显示面板包括基板、薄膜晶体管（Thin Film Transistor，TFT）阵列功能层、平坦层、阳极、像素定义层和间隔部。
TFT阵列功能层设置在基板上。平坦层设置在阵列功能层上。阳极设置在平坦层上。像素定义层设置在阳极上。
其中，平坦层和/或像素定义层包括有用于吸收照射入OLED显示面板外来光的吸光体，吸光体掺杂在平坦层和/或像素定义层内。即，吸光体可以掺杂在平坦层内（第一实施例），或掺杂在像素定义层内（第二实施例），或掺杂在平坦层和像素定义层内（第三实施例）。
请参照图1，图1为本申请的OLED显示面板的第一实施例的结构示意图。本申请的第一实施例的OLED显示面板100，其包括基板11、TFT阵列功能层12、平坦层13、阳极14、像素定义层15和间隔部16。
TFT阵列功能层12设置在基板11上。平坦层13设置在阵列功能层12上。阳极14设置在平坦层13上。像素定义层15设置在阳极14上。间隔部16设置在像素定义层15上。其中，平坦层13包括有用于吸收照射入OLED显示面板100外来光的吸光体131，吸光体131掺杂在平坦层13内。
在本第一实施例中，当外来光线透过有机发光层材料向下照射时，平坦层13中掺杂的吸光体131会吸收大部分的光线，从而只有极少部分的光线能向下照射到TFT阵列功能层12中的第一栅极金属层123和第二栅极金属层125等金属层，最终只有极少数的反射光射出，使有机发光层发出的光更清晰和高效化，降低OLED面板的视觉混淆。
形成平坦层13的过程是：首先准备平坦层原料，平坦层原料为浓度较高的溶液，接着将吸光体131混合在平坦层原料中，并混合均匀；然后将该混合溶液涂布在TFT阵列功能层12。最后，烘干混合溶液，以形成平坦层13。
为了确保平坦层13具有良好的平坦化作用和成膜效果，吸光体131和平坦层13的掺杂比例小于等于35:100。即吸光体131和烘干后的混合溶液（平坦层13）的比例小于等于为35:100。而为了确保吸光体131的良好吸光效果，吸光体131和平坦层13的掺杂比例大于等于1:10。
吸光体131的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。即吸光体131可以单一的碳纳米管、镍铁合金和苯并噻吩类的化学物质，也可以是两种不同材料的吸光体131掺杂在平坦层13中，也可以是三种不同材料的吸光体131掺杂在平坦层13中。
在本第一实施例中，吸光体131的粒径小于平坦层13的厚度。这样的设置，便于平坦层13成膜。
进一步的，吸光体131的粒径小于等于平坦层13厚度的三分之一。由于平坦层13的作用在于平坦化TFT阵列功能层12的顶面，以便在形成阳极14。因此平坦层13必须具有一定的流平性，因此当吸光体131的粒径小于等于平坦层13厚度的三分之一，提高了平坦层13平坦化的作用。
另一方面，吸光体131均匀分布在平坦层13内。这样的设置，一方面便于平坦层13成膜，另一方面，提高了吸光体131在平坦层13中的吸光效果。
在本申请的OLED显示面板中，所述TFT阵列功能层包括依次设置在所述基板上的有源层121、第一绝缘层122、第一栅极金属层123、第二绝缘层124、第二栅极金属层125、层间介电层126和源漏金属层127。
请参照图2，本第二实施例的OLED显示面板200包括基板21、TFT阵列功能层22、平坦层23、阳极24、像素定义层25和间隔部26。本第二实施例和第一实施例的不同之处在于：
像素定义层25包括有用于吸收照射入OLED显示面板200外来光的吸光体251，吸光体251掺杂在像素定义层25内。
在本第二实施例中，当外来光线透过有机发光层材料向下照射时，像素定义层25中掺杂的吸光体251会吸收大部分的光线，从而只有极少部分的光线能向下照射到TFT阵列功能层22中的第一栅极金属层和第二栅极金属层等金属层，最终只有极少数的反射光射出，使有机发光层发出的光更清晰和高效化，降低OLED面板的视觉混淆。
形成像素定义层25的过程是：首先准备像素定义层原料，像素定义层原料为浓度较高的溶液，接着将吸光体251混合在像素定义层原料中，并混合均匀，形成混合溶液；然后将该混合溶液涂布在阳极24上。最后，烘干混合溶液，以形成像素定义层25。
为了确保像素定义层25具有良好的成膜效果，吸光体251和像素定义层25的掺杂比例小于等于35:100。即吸光体251和烘干后的混合溶液（像素定义层24）的比例小于等于为35:100。而为了确保吸光体251的良好吸光效果，吸光体251和像素定义层25的掺杂比例大于等于1:10。
且吸光体251的粒径小于像素定义层25的厚度。这样的设置，便于像素定义层25成膜。
吸光体251均匀分布在像素定义层25内，以提高吸光体251的吸光效果。
请参照图3，本第三实施例的OLED显示面板300包括基板31、TFT阵列功能层32、平坦层33、阳极34、像素定义层35和间隔部36。本第三实施例和第一实施例的不同之处在于：
平坦层33和像素定义层35包括有用于吸收照射入OLED显示面板300外来光的吸光体，吸光体掺杂在平坦层33和像素定义层35内。平坦层33中的吸光体为第一吸光体331。像素定义层35中的吸光体为第二吸光体351。
在本第三实施例中，通过在平坦层33和像素定义层35均掺杂有吸光体，提高了对外来光线的吸收效果。
其中，平坦层33的第一吸光体331的结构和第一实施例中的吸光体的结构相同，具体请参照第一实施例的内容。像素定义层35的第二吸光体351的结构和第二实施例中的吸光体的结构相同，具体请参照第二实施例的内容。
本申请还涉及一种OLED显示装置，其包括OLED显示面板，OLED显示面板包括：
基板；
TFT阵列功能层，设置在所述基板上；
平坦层，设置在所述阵列功能层上；
阳极，设置在所述平坦层上；
像素定义层，设置在所述阳极上；
其中，所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体，所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于所述平坦层的厚度；当所述像素定义层掺杂有所述吸光体时，所述吸光体的粒径小于所述像素定义层的厚度。
在本申请的OLED显示装置中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
在本申请的OLED显示装置中，所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中，当所述平坦层内掺杂有所述吸光体时，所述吸光体和所述平坦层的掺杂比例小于等于35:100；当所述像素定义层掺杂有所述吸光体时，所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
在本申请的OLED显示装置中，所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
在本申请的OLED显示装置中，所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
相较于现有技术的显示面板，本申请的OLED显示面板和OLED显示装置通过在平坦层和/或像素定义层中掺杂吸光材料，以吸收射入OLED显示面板的外来光线，减少外来光线照射到阵列功能层的金属层从而发生反射，进而减弱反射光对有机发光层发出光的影响，提高OLED显示面板的清晰度，降低OLED显示面板的视觉混淆；解决了现有的OLED显示面板中，外来光线遇到的栅极金属层和源漏金属层发生反射，导致反射光线和有机发光层发出光线混淆，造成OLED显示面板的出光效果较差的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (19)

  1. 一种OLED显示面板，其包括：
    基板；
    TFT阵列功能层，设置在所述基板上；
    平坦层，设置在所述阵列功能层上；
    阳极，设置在所述平坦层上；以及
    像素定义层，设置在所述阳极上；
    其中所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体，所述吸光体掺杂在所述平坦层和/或所述像素定义层内；
    所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料；
    当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于所述平坦层的厚度；当所述像素定义层掺杂有所述吸光体时，所述吸光体的粒径小于所述像素定义层的厚度。
  2. 根据权利要求1所述的OLED显示面板，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
  3. 根据权利要求1所述的OLED显示面板，其中，所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
  4. 根据权利要求1所述的OLED显示面板，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体和所述平坦层的掺杂比例小于等于35:100；当所述像素定义层掺杂有所述吸光体时，所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
  5. 根据权利要求1所述的OLED显示面板，其中，所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
  6. 一种OLED显示面板，其包括：
    基板；
    TFT阵列功能层，设置在所述基板上；
    平坦层，设置在所述阵列功能层上；
    阳极，设置在所述平坦层上；以及
    像素定义层，设置在所述阳极上；
    其中所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体，所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
  7. 根据权利要求6所述的OLED显示面板，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于所述平坦层的厚度；当所述像素定义层掺杂有所述吸光体时，所述吸光体的粒径小于所述像素定义层的厚度。
  8. 根据权利要求7所述的OLED显示面板，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
  9. 根据权利要求6所述的OLED显示面板，其中，所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
  10. 根据权利要求6所述的OLED显示面板，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体和所述平坦层的掺杂比例小于等于35:100；当所述像素定义层掺杂有所述吸光体时，所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
  11. 根据权利要求6所述的OLED显示面板，其中，所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
  12. 根据权利要求6所述的OLED显示面板，其中，所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
  13. 一种OLED显示装置，其包括OLED显示面板，所述OLED显示面板包括：
    基板；
    TFT阵列功能层，设置在所述基板上；
    平坦层，设置在所述阵列功能层上；
    阳极，设置在所述平坦层上；
    像素定义层，设置在所述阳极上；
    其中所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体，所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
  14. 根据权利要求13所述的OLED显示装置，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于所述平坦层的厚度；当所述像素定义层掺杂有所述吸光体时，所述吸光体的粒径小于所述像素定义层的厚度。
  15. 根据权利要求13所述的OLED显示装置，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体和所述平坦层的掺杂比例小于等于35:100；当所述像素定义层掺杂有所述吸光体时，所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
  16. 根据权利要求14所述的OLED显示装置，其中，当所述平坦层内掺杂有所述吸光体时，所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
  17. 根据权利要求13所述的OLED显示装置，其中，所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
  18. 根据权利要求13所述的OLED显示装置，其中，所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
  19. 根据权利要求13所述的OLED显示装置，其中，所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
PCT/CN2019/070466 2018-12-03 2019-01-04 Oled 显示面板及 oled 显示装置 Ceased WO2020113755A1 (zh)

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