CN109638044A - Oled显示面板及oled显示装置 - Google Patents
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- 230000008033 biological extinction Effects 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 31
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- 230000000694 effects Effects 0.000 description 12
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- 239000011229 interlayer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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Abstract
本申请提供一种OLED显示面板及OLED显示装置,包括基板、TFT阵列功能层、设置在阵列功能层上的平坦层、阳极和设置在阳极上的像素定义层,平坦层和/或像素定义层包括有用于吸收照射入OLED显示面板外来光的吸光体,吸光体掺杂在平坦层和/或像素定义层内。本申请通过吸光体的设置,以吸收射入OLED显示面板的外来光线,减少外来光线照射到阵列功能层的金属层从而发生反射,进而减弱反射光对有机发光层发出光的影响,提高OLED显示面板的清晰度。
Description
技术领域
本申请涉及一种显示技术,特别涉及一种OLED显示面板及OLED显示装置。
背景技术
在有机发光二极管(Organic Light Emitting Diode,OLED)显示面板中,OLED显示面板包括有栅极金属层和源漏极金属层。OLED显示面板在使用的过程中,外来光线透过显示面板的有机发光层向下照射。当光线遇到栅极金属层、源漏极金属层时会发生反射,反射光线向上透过有机发光层射出屏幕。这样会造成有机发光层发出的光和反射光同时存在,影响OLED显示面板的出光效果,造成视觉混淆。
发明内容
本申请实施例提供一种OLED显示面板及OLED显示装置,以解决现有的OLED显示面板中,外来光线遇到的栅极金属层和源漏金属层发生反射,导致反射光线和有机发光层发出光线混淆,造成OLED显示面板的出光效果较差的技术问题。
本申请实施例提供一种OLED显示面板,其包括:
基板;
TFT阵列功能层,设置在所述基板上;
平坦层,设置在所述阵列功能层上;
阳极,设置在所述平坦层上;以及
像素定义层,设置在所述阳极上;
其中,所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体,所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示面板中,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于所述平坦层的厚度;当所述像素定义层掺杂有所述吸光体时,所述吸光体的粒径小于所述像素定义层的厚度。
在本申请的OLED显示面板中,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
在本申请的OLED显示面板中,所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示面板中,当所述平坦层内掺杂有所述吸光体时,所述吸光体和所述平坦层的掺杂比例小于等于35:100;当所述像素定义层掺杂有所述吸光体时,所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
在本申请的OLED显示面板中,所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
在本申请的OLED显示面板中,所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
本申请还涉及一种OLED显示装置,其包括OLED显示面板,所述OLED显示面板包括:
基板;
TFT阵列功能层,设置在所述基板上;
平坦层,设置在所述阵列功能层上;
阳极,设置在所述平坦层上;
像素定义层,设置在所述阳极上;
其中,所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体,所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于所述平坦层的厚度;当所述像素定义层掺杂有所述吸光体时,所述吸光体的粒径小于所述像素定义层的厚度。
在本申请的OLED显示装置中,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
在本申请的OLED显示装置中,所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中,当所述平坦层内掺杂有所述吸光体时,所述吸光体和所述平坦层的掺杂比例小于等于35:100;当所述像素定义层掺杂有所述吸光体时,所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
在本申请的OLED显示装置中,所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
在本申请的OLED显示装置中,所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
相较于现有技术的显示面板,本申请的OLED显示面板和OLED显示装置通过在平坦层和/或像素定义层中掺杂吸光材料,以吸收射入OLED显示面板的外来光线,减少外来光线照射到阵列功能层的金属层从而发生反射,进而减弱反射光对有机发光层发出光的影响,提高OLED显示面板的清晰度,降低OLED显示面板的视觉混淆;解决了现有的OLED显示面板中,外来光线遇到的栅极金属层和源漏金属层发生反射,导致反射光线和有机发光层发出光线混淆,造成OLED显示面板的出光效果较差的技术问题。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图获取其他的附图。
图1为本申请的OLED显示面板的第一实施例的结构示意图;
图2为本申请的OLED显示面板的第二实施例的结构示意图;
图3为本申请的OLED显示面板的第三实施例的结构示意图。
具体实施方式
请参照附图中的图式,其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例,其不应被视为限制本申请未在此详述的其它具体实施例。
在本申请的OLED显示面板中,OLED显示面板包括基板、薄膜晶体管(Thin FilmTransistor,TFT)阵列功能层、平坦层、阳极、像素定义层和间隔部。
TFT阵列功能层设置在基板上。平坦层设置在阵列功能层上。阳极设置在平坦层上。像素定义层设置在阳极上。
其中,平坦层和/或像素定义层包括有用于吸收照射入OLED显示面板外来光的吸光体,吸光体掺杂在平坦层和/或像素定义层内。即,吸光体可以掺杂在平坦层内(第一实施例),或掺杂在像素定义层内(第二实施例),或掺杂在平坦层和像素定义层内(第三实施例)。
请参照图1,图1为本申请的OLED显示面板的第一实施例的结构示意图。本申请的第一实施例的OLED显示面板100,其包括基板11、TFT阵列功能层12、平坦层13、阳极14、像素定义层15和间隔部16。
TFT阵列功能层12设置在基板11上。平坦层13设置在阵列功能层12上。阳极14设置在平坦层13上。像素定义层15设置在阳极14上。间隔部16设置在像素定义层15上。其中,平坦层13包括有用于吸收照射入OLED显示面板100外来光的吸光体131,吸光体131掺杂在平坦层13内。
在本第一实施例中,当外来光线透过有机发光层材料向下照射时,平坦层13中掺杂的吸光体131会吸收大部分的光线,从而只有极少部分的光线能向下照射到TFT阵列功能层12中的第一栅极金属层123和第二栅极金属层125等金属层,最终只有极少数的反射光射出,使有机发光层发出的光更清晰和高效化,降低OLED面板的视觉混淆。
形成平坦层13的过程是:首先准备平坦层原料,平坦层原料为浓度较高的溶液,接着将吸光体131混合在平坦层原料中,并混合均匀;然后将该混合溶液涂布在TFT阵列功能层12。最后,烘干混合溶液,以形成平坦层13。
为了确保平坦层13具有良好的平坦化作用和成膜效果,吸光体131和平坦层13的掺杂比例小于等于35:100。即吸光体131和烘干后的混合溶液(平坦层13)的比例小于等于为35:100。而为了确保吸光体131的良好吸光效果,吸光体131和平坦层13的掺杂比例大于等于1:10。
吸光体131的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。即吸光体131可以单一的碳纳米管、镍铁合金和苯并噻吩类的化学物质,也可以是两种不同材料的吸光体131掺杂在平坦层13中,也可以是三种不同材料的吸光体131掺杂在平坦层13中。
在本第一实施例中,吸光体131的粒径小于平坦层13的厚度。这样的设置,便于平坦层13成膜。
进一步的,吸光体131的粒径小于等于平坦层13厚度的三分之一。由于平坦层13的作用在于平坦化TFT阵列功能层12的顶面,以便在形成阳极14。因此平坦层13必须具有一定的流平性,因此当吸光体131的粒径小于等于平坦层13厚度的三分之一,提高了平坦层13平坦化的作用。
另一方面,吸光体131均匀分布在平坦层13内。这样的设置,一方面便于平坦层13成膜,另一方面,提高了吸光体131在平坦层13中的吸光效果。
在本申请的OLED显示面板中,所述TFT阵列功能层包括依次设置在所述基板上的有源层121、第一绝缘层122、第一栅极金属层123、第二绝缘层124、第二栅极金属层125、层间介电层126和源漏金属层127。
请参照图2,本第二实施例的OLED显示面板200包括基板21、TFT阵列功能层22、平坦层23、阳极24、像素定义层25和间隔部26。本第二实施例和第一实施例的不同之处在于:
像素定义层25包括有用于吸收照射入OLED显示面板200外来光的吸光体251,吸光体251掺杂在像素定义层25内。
在本第二实施例中,当外来光线透过有机发光层材料向下照射时,像素定义层25中掺杂的吸光体251会吸收大部分的光线,从而只有极少部分的光线能向下照射到TFT阵列功能层22中的第一栅极金属层和第二栅极金属层等金属层,最终只有极少数的反射光射出,使有机发光层发出的光更清晰和高效化,降低OLED面板的视觉混淆。
形成像素定义层25的过程是:首先准备像素定义层原料,像素定义层原料为浓度较高的溶液,接着将吸光体251混合在像素定义层原料中,并混合均匀,形成混合溶液;然后将该混合溶液涂布在阳极24上。最后,烘干混合溶液,以形成像素定义层25。
为了确保像素定义层25具有良好的成膜效果,吸光体251和像素定义层25的掺杂比例小于等于35:100。即吸光体251和烘干后的混合溶液(像素定义层24)的比例小于等于为35:100。而为了确保吸光体251的良好吸光效果,吸光体251和像素定义层25的掺杂比例大于等于1:10。
且吸光体251的粒径小于像素定义层25的厚度。这样的设置,便于像素定义层25成膜。
吸光体251均匀分布在像素定义层25内,以提高吸光体251的吸光效果。
请参照图3,本第三实施例的OLED显示面板300包括基板31、TFT阵列功能层32、平坦层33、阳极34、像素定义层35和间隔部36。本第三实施例和第一实施例的不同之处在于:
平坦层33和像素定义层35包括有用于吸收照射入OLED显示面板300外来光的吸光体,吸光体掺杂在平坦层33和像素定义层35内。平坦层33中的吸光体为第一吸光体331。像素定义层35中的吸光体为第二吸光体351。
在本第三实施例中,通过在平坦层33和像素定义层35均掺杂有吸光体,提高了对外来光线的吸收效果。
其中,平坦层33的第一吸光体331的结构和第一实施例中的吸光体的结构相同,具体请参照第一实施例的内容。像素定义层35的第二吸光体351的结构和第二实施例中的吸光体的结构相同,具体请参照第二实施例的内容。
本申请还涉及一种OLED显示装置,其包括OLED显示面板,OLED显示面板包括:
基板;
TFT阵列功能层,设置在所述基板上;
平坦层,设置在所述阵列功能层上;
阳极,设置在所述平坦层上;
像素定义层,设置在所述阳极上;
其中,所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体,所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于所述平坦层的厚度;当所述像素定义层掺杂有所述吸光体时,所述吸光体的粒径小于所述像素定义层的厚度。
在本申请的OLED显示装置中,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
在本申请的OLED显示装置中,所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
在本申请的OLED显示装置中,当所述平坦层内掺杂有所述吸光体时,所述吸光体和所述平坦层的掺杂比例小于等于35:100;当所述像素定义层掺杂有所述吸光体时,所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
在本申请的OLED显示装置中,所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
在本申请的OLED显示装置中,所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
相较于现有技术的显示面板,本申请的OLED显示面板和OLED显示装置通过在平坦层和/或像素定义层中掺杂吸光材料,以吸收射入OLED显示面板的外来光线,减少外来光线照射到阵列功能层的金属层从而发生反射,进而减弱反射光对有机发光层发出光的影响,提高OLED显示面板的清晰度,降低OLED显示面板的视觉混淆;解决了现有的OLED显示面板中,外来光线遇到的栅极金属层和源漏金属层发生反射,导致反射光线和有机发光层发出光线混淆,造成OLED显示面板的出光效果较差的技术问题。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (10)
1.一种OLED显示面板,其特征在于,包括:
基板;
TFT阵列功能层,设置在所述基板上;
平坦层,设置在所述阵列功能层上;
阳极,设置在所述平坦层上;以及
像素定义层,设置在所述阳极上;
其中,所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体,所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
2.根据权利要求1所述的OLED显示面板,其特征在于,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于所述平坦层的厚度;当所述像素定义层掺杂有所述吸光体时,所述吸光体的粒径小于所述像素定义层的厚度。
3.根据权利要求2所述的OLED显示面板,其特征在于,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
4.根据权利要求1所述的OLED显示面板,其特征在于,所述吸光体均匀分布在所述平坦层和/或所述像素定义层内。
5.根据权利要求1所述的OLED显示面板,其特征在于,当所述平坦层内掺杂有所述吸光体时,所述吸光体和所述平坦层的掺杂比例小于等于35:100;当所述像素定义层掺杂有所述吸光体时,所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
6.根据权利要求1所述的OLED显示面板,其特征在于,所述吸光体的材料为碳纳米管、镍铁合金和苯并噻吩类的化学物质的一种或至少两种不同材料。
7.根据权利要求1所述的OLED显示面板,其特征在于,所述TFT阵列功能层包括依次设置在所述基板上的有源层、第一绝缘层、第一栅极金属层、第二绝缘层、第二栅极金属层、层间介电层和源漏金属层。
8.一种OLED显示装置,其特征在于,包括OLED显示面板,所述OLED显示面板包括:
基板;
TFT阵列功能层,设置在所述基板上;
平坦层,设置在所述阵列功能层上;
阳极,设置在所述平坦层上;
像素定义层,设置在所述阳极上;
其中,所述平坦层和/或所述像素定义层包括有用于吸收照射入所述OLED显示面板外来光的吸光体,所述吸光体掺杂在所述平坦层和/或所述像素定义层内。
9.根据权利要求8所述的OLED显示装置,其特征在于,当所述平坦层内掺杂有所述吸光体时,所述吸光体的粒径小于等于所述平坦层厚度的三分之一。
10.根据权利要求8所述的OLED显示装置,其特征在于,当所述平坦层内掺杂有所述吸光体时,所述吸光体和所述平坦层的掺杂比例小于等于35:100;当所述像素定义层掺杂有所述吸光体时,所述吸光体和所述像素定义层的掺杂比例小于等于35:100。
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