WO2020113749A1 - Oled 显示面板的制作方法及 oled 显示面板 - Google Patents

Oled 显示面板的制作方法及 oled 显示面板 Download PDF

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Publication number
WO2020113749A1
WO2020113749A1 PCT/CN2019/070120 CN2019070120W WO2020113749A1 WO 2020113749 A1 WO2020113749 A1 WO 2020113749A1 CN 2019070120 W CN2019070120 W CN 2019070120W WO 2020113749 A1 WO2020113749 A1 WO 2020113749A1
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layer
ito layer
ito
display panel
oled display
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French (fr)
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李镇石
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/489,414 priority Critical patent/US11063234B2/en
Publication of WO2020113749A1 publication Critical patent/WO2020113749A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape

Definitions

  • the invention relates to the field of display technology, in particular to a method for manufacturing an OLED display panel and an OLED display panel.
  • OLED Organic Light-Emitting Diode
  • OLED display technology has become the object of research in the field of optoelectronics due to its advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, and high response speed. According to the way of taking out light, OLED displays can be divided into top-emission type and bottom-emission type. Traditional bottom-emission OLED devices need to emit light through the array substrate on the bottom layer. Metal devices on the array substrate will block part of the light. The problem of low aperture ratio; the light of the top-emitting OLED device does not need to pass through the substrate, and is emitted from above the OLED light-emitting layer, avoiding the problem of low aperture ratio.
  • top-emitting OLED displays the structure and performance of the anode are the key factors that determine the performance of the device.
  • the anode is required to have high reflectivity and high work function.
  • composite materials are used as anodes for top-emitting OLEDs.
  • Commonly used composite anode materials There are two main categories of transparent conductive oxides and metals.
  • the composite anode generally adopts a three-layer film superimposing method.
  • the middle layer is a metal film to increase the reflectivity of the anode, and the upper and lower two films are oxides with high work functions.
  • a yellow photolithography process is used to form a patterned composite anode.
  • the photoresist covering the top film layer becomes deeper as the etching depth increases, and the photoresist will be missing during the etching process.
  • the other areas that do not need to be etched are etched away, and the areas of the metal layer that do not need to be etched are exposed, which in turn causes the surface of the metal to change, causing quality problems and affecting the performance of the OLED.
  • the invention provides a method for manufacturing an OLED display panel to solve the existing method for manufacturing an OLED. Since the photoresist may be missing during the etching process when preparing the OLED anode, the metal layer does not need to be etched. Exposure to bareness leads to changes in the metal surface, which in turn affects the technical issues of display device performance.
  • the present invention provides an OLED display panel, including: an array substrate, an anode layer formed on the array substrate, and an OLED light emitting layer formed on the anode layer, the array substrate includes a base substrate and a A thin film transistor array on the base substrate; the anode layer includes a first ITO layer, a reflective layer, and a second ITO layer arranged in sequence; wherein, the second ITO layer covers the reflective layer, and the second Part of the film thickness of the ITO layer is greater than that of the first ITO layer; the first ITO layer, the reflective layer, and the second ITO layer are formed by the same etching process, and the reflective layer
  • the material is silver metal.
  • the partial film thickness of the second ITO layer is twice the film thickness of the first ITO layer.
  • the invention also provides a method for manufacturing an OLED display panel, including the following steps:
  • an array substrate includes a substrate substrate and a thin film transistor array
  • a first ITO layer, a reflective layer, and a second ITO layer are sequentially formed on the array substrate, wherein the film thickness of the second ITO layer is greater than the film thickness of the first ITO layer;
  • the film thickness of the second ITO layer is twice that of the first ITO layer.
  • the etching time of the second ITO layer is greater than the etching time of the first ITO layer.
  • the S40 includes:
  • the first ITO layer is etched using the photoresist and the second ITO layer as self-alignment, wherein the second ITO layer covers the reflective layer.
  • the photoresist is stripped, and the patterned first ITO layer, the reflective layer, and the second ITO layer together form the Anode layer.
  • a partial film thickness of the second ITO layer is less than or equal to the film thickness of the first ITO layer.
  • the S20 includes:
  • a reflective layer is vapor-deposited on the first ITO layer, and the reflective layer material is silver metal material;
  • the present invention provides another OLED display panel, including: an array substrate, an anode layer formed on the array substrate, and an OLED light emitting layer formed on the anode layer;
  • the array substrate includes a substrate substrate and a A thin film transistor array on the base substrate;
  • the anode layer includes a first ITO layer, a reflective layer, and a second ITO layer arranged in sequence; wherein the second ITO layer covers the reflective layer, and the first Part of the film thickness of the second ITO layer is greater than that of the first ITO layer.
  • the first ITO layer, the reflective layer, and the second ITO layer are formed through the same etching process.
  • the partial film thickness of the second ITO layer is twice the film thickness of the first ITO layer.
  • the beneficial effects of the present invention are as follows: The manufacturing method of the OLED display panel provided by the present invention, by increasing the thickness of the top ITO film layer, avoids the influence of the lack of photoresist during the etching process, resulting in the lower metal surface being affected, and Ensure the quality stability of the product.
  • FIGS. 2 to 4 are schematic diagrams of OLED structures in the manufacturing process of the OLED display panel of the present invention.
  • 5 to 7 are schematic diagrams of the structure of an OLED in the absence of photoresist of the present invention.
  • the present invention is directed to the manufacturing method of the existing OLED display panel.
  • the photoresist may be missing during the etching process, resulting in the exposed areas of the metal layer that need not be etched, resulting in changes in the surface properties of the metal. Furthermore, the technical problem that affects the display performance of the device can be solved in this embodiment.
  • the present invention provides a method for manufacturing an OLED display panel, including the following steps:
  • an array substrate 10 is provided, and the array substrate 10 includes a base substrate and a thin film transistor array;
  • the base substrate may be a flexible substrate such as a glass substrate or polyimide.
  • the thin film transistor array includes an active layer, source and drain electrodes, and a gate electrode.
  • the array substrate is further provided with a gate insulating layer and an interlayer For the structure of the insulating layer and the pixel definition layer, reference may be made to the prior art, which will not be repeated here.
  • ITO Indium tin oxide, Indium Tin Oxide
  • a metal material is vapor-deposited on the first ITO layer 21 to form the reflective layer 22.
  • the metal material in this embodiment is silver metal, and silver has high reflectivity, which can reflect the light of the OLED back;
  • a layer of ITO material is evaporated on the reflective layer 22 to form a second ITO layer 23;
  • the second ITO layer 23 is evaporated to a film thickness greater than that of the first ITO layer 21, so that even if the photoresist is missing, the etching process continues In this case, the second ITO layer 23 will not be completely etched away, and a certain thickness of the film layer will remain, so as to prevent the lower reflective layer 22 from being affected by etching.
  • a patterned photoresist 30 is formed on the second ITO layer 23;
  • the second ITO layer 23 is etched by a wet etching method, the photoresist 30 is used for self-alignment, and the second ITO layer 23 is covered by the photoresist Partially reserved, other parts are etched away, because the wet etching has side etching while etching along the thickness direction of the film, so the wet etching will affect the etching accuracy, but the error is within the required accuracy range, And wet etching has the advantages of fast etching rate, high selection ratio, and low price;
  • the self-aligned photoresist 30 and the etched second ITO layer 23 are used to etch the reflective layer 22 to form a patterned reflective layer 22;
  • FIG. 5 illustrates a type of photoresist missing after the reflective layer 22 is etched. may;
  • the first ITO layer 21 is etched, resulting in the first Part of the surface of the second ITO layer 23 is exposed, so during the process of etching the first ITO layer 21, the exposed part of the second ITO layer 23 will also be etched by the etching solution;
  • the film thickness of the second ITO layer 23 is greater than the film thickness of the first ITO layer 21, to avoid that after the photoresist is missing, the etching solution corresponds to the top of the reflective layer 22
  • the film layer of the second ITO layer 23 is completely etched away.
  • the thickness of the film layer deposited by the second ITO layer 23 is twice that of the film layer of the first ITO layer 21, corresponding to Ground, the etching time of the second ITO layer 23 is greater than the etching time of the first ITO layer 21;
  • the corresponding second ITO layer 23 above the reflective layer 22 retains a certain thickness of the film layer, although it is affected by the etching solution, but The second ITO layer 23 completely covers the reflective layer 22 even if the photoresist is missing, which effectively protects the underlying reflective layer from etching.
  • the photoresist 30 is stripped, and the patterned first ITO layer 21, the reflective layer 22, and the second ITO layer together form a composite structure In the anode layer 20, a part of the film thickness of the second ITO layer 23 after etching is less than or equal to that of the first ITO layer, and this part of the film thickness corresponds to the area where the photoresist is missing.
  • etching residue is not allowed to exist in the etching process, so in the actual etching process, it will be calculated
  • a certain percentage of etching time (usually called over-etching time) is extended to ensure that there is no etching residue.
  • the thickness of the film layer deposited by the second ITO layer 23 is more than 1.5 times the thickness of the first ITO film layer, so as to ensure that the film layer of the photoresist missing area corresponding to the second ITO layer 23 will be thin
  • the thin layer retains a certain thickness to protect the lower reflective layer 22 from etching.
  • the OLED light emitting layer is prepared on the second ITO layer 23, and the OLED light emitting layer includes a hole injection layer, a hole transport layer, a light emitting material layer, an electron transport layer, and an electron injection layer; the preparation The method also includes preparing a cathode on the OLED light emitting layer.
  • the manufacturing method provided by the present invention is also applicable to other structures for forming a three-layer film layer, and is particularly applicable to the case where the top vapor deposition film is missing and causes adverse effects.
  • the present invention also provides an OLED display panel prepared by the above manufacturing method, which includes an array substrate 10, an anode layer 20, and an OLED light emitting layer formed on the anode layer 20.
  • the array substrate includes a base substrate and a thin film transistor array disposed on the base substrate.
  • the anode layer 20 is formed on the array substrate 10, and the array substrate 10 includes a first ITO layer 21, a reflective layer 22, and a second ITO layer 23 in sequence, wherein the second ITO layer 23 covers the For the reflective layer 22, the thickness of a part of the film layer of the second ITO layer 23 is greater than that of the first ITO layer 21.
  • the specific structure of the anode layer 20 please refer to the structure prepared by the above manufacturing method, which is not repeated here .
  • the manufacturing method of the OLED display panel provided by the present invention by increasing the thickness of the top ITO film layer, avoids the influence of the lack of photoresist during the etching process, resulting in the lower metal surface being affected, thereby ensuring the product Quality stability.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示面板的制作方法，包括：提供阵列基板；在阵列基板上依次形成第一ITO层、反射层、第二ITO层，其中，所述第二ITO层的膜层厚度大于所述第一ITO层的膜层厚度；在第二ITO层上形成图案化的光刻胶；利用同一道刻蚀工艺对第二ITO层、反射层、第一ITO层进行刻蚀，以形成图案化的阳极层；在所述阳极层上制备OLED发光层。

Description

OLED显示面板的制作方法及OLED显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板的制作方法及OLED显示面板。
 背景技术
OLED（Organic Light-Emitting Diode，有机发光二极管）显示技术因具有自发光、广视角、高对比度、低电耗、高反应速度等优点，成为光电领域研究的对象。按光的取出方式，OLED显示器可分为顶发射型和底发射型，传统的底发射型OLED器件，其光线需要穿过底层的阵列基板发光，阵列基板上的金属器件会遮挡部分光线，存在开口率低的问题；顶发射型OLED器件的光线不需穿过基板，从OLED发光层的上方射出，避免了开口率低的问题。在顶发射型OLED显示器中，阳极的结构和性能是决定器件性能的关键因素，要求阳极具有高的反射率和高功函数，一般采用复合材料作为顶发射型OLED的阳极，常用的复合阳极材料主要有透明导电氧化物和金属两大类。
目前的复合阳极一般采用三层膜叠加的方式，中间一层为金属薄膜增加阳极的反射率，上下两层薄膜则为具有高功函数的氧化物。一般采用黄光工艺形成图案化的复合阳极，在进行三层膜层的刻蚀时，覆盖顶层膜层的光刻胶随着刻蚀深度的加深，在刻蚀过程中光刻胶会出现缺失的情况，导致顶层膜层其他不需刻蚀的区域被刻蚀掉，裸露出金属层的不需要刻蚀的区域，进而导致金属的表面发生变化，引起品质问题，进而影响OLED的性能。
 技术问题
本发明提供一种OLED显示面板的制作方法，以解决现有的OLED的制作方法，由于在制备OLED阳极时，在刻蚀过程中光刻胶有可能缺失，导致金属层不需刻蚀的领域裸露出来，导致金属表面发生变化，进而影响显示器件性能的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种OLED显示面板，包括：阵列基板、形成于所述阵列基板上的阳极层、以及形成于所述阳极层上的OLED发光层，所述阵列基板包括衬底基板和设置于所述衬底基板上的薄膜晶体管阵列；所述阳极层包括依次设置的第一ITO层、反射层、以及第二ITO层；其中，所述第二ITO层覆盖所述反射层，所述第二ITO层的部分膜层厚度大于所述第一ITO层的膜层厚度；所述第一ITO层、所述反射层、以及所述第二ITO层经过同一道刻蚀工艺形成，所述反射层材料为银金属。
在本发明的至少一种实施例中，所述第二ITO层的部分膜层厚度是所述第一ITO层的膜层厚度的两倍。
本发明还提供一种OLED显示面板的制作方法，包括以下步骤：
S10，提供阵列基板，所述阵列基板包括衬底基板和薄膜晶体管阵列；
S20，在所述阵列基板上依次形成第一ITO层、反射层、第二ITO层，其中，所述第二ITO层的膜层厚度大于所述第一ITO层的膜层厚度；
S30，在所述第二ITO层上形成图案化的光刻胶；
S40，利用同一道刻蚀工艺对所述第二ITO层、所述反射层、所述第一ITO层进行刻蚀，以形成图案化的阳极层；
S50，在所述阳极层上制备OLED发光层。
在本发明的至少一种实施例中，所述S20中，所述第二ITO层的膜层厚度是所述第一ITO层的膜层厚度的2倍。
在本发明的至少一种实施例中，所述第二ITO层的刻蚀时间大于所述第一ITO层的刻蚀时间。
在本发明的至少一种实施例中，所述S40包括：
S401，以所述光刻胶为自对准，对所述第二ITO层进行刻蚀；
S402，以所述光刻胶和所述第二ITO层为自对准，对所述反射层进行刻蚀；
S403，以所述光刻胶和所述第二ITO层为自对准，对所述第一ITO层进行刻蚀，其中，所述第二ITO层覆盖所述反射层。
在本发明的至少一种实施例中，在所述S40之后，剥离所述光刻胶，图案化后的所述第一ITO层、所述反射层、所述第二ITO层一起形成所述阳极层。
在本发明的至少一种实施例中，经过刻蚀工艺后，所述第二ITO层的部分膜层厚度小于或等于所述第一ITO层的膜层厚度。
在本发明的至少一种实施例中，所述S20包括：
S201，在所述阵列基板上蒸镀第一ITO层；
S202，在所述第一ITO层上蒸镀反射层，所述反射层材料为银金属材料；
S203，在所述反射层上蒸镀第二ITO层。
本发明提供另一种OLED显示面板，包括：阵列基板、形成于所述阵列基板上的阳极层、以及形成于所述阳极层上的OLED发光层；所述阵列基板包括衬底基板和设置于所述衬底基板上的薄膜晶体管阵列；所述阳极层包括依次设置的第一ITO层、反射层、以及第二ITO层；其中，所述第二ITO层覆盖所述反射层，所述第二ITO层的部分膜层厚度大于所述第一ITO层的膜层厚度。
在本发明的至少一种实施例中，所述第一ITO层、所述反射层、以及所述第二ITO层经过同一道刻蚀工艺形成。
在本发明的至少一种实施例中，所述第二ITO层的部分膜层厚度是所述第一ITO层的膜层厚度的两倍。
 有益效果
本发明的有益效果为：本发明提供的OLED显示面板的制作方法，通过增加顶层的ITO膜层的厚度，避免了在刻蚀过程中由于光刻胶的缺失，导致下层金属表面受到影响，进而保证了产品的品质稳定性。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明OLED显示面板的制作方法的步骤流程图；
图2~4为本发明OLED显示面板的制作过程中的OLED结构示意图；
图5~7为本发明光刻胶缺失情况下的OLED结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的OLED显示面板的制作方法，由于在制备OLED阳极时，刻蚀过程中光刻胶可能会缺失，导致金属层不需刻蚀的领域裸露出来，导致金属表面性质发变化，进而影响器件显示性能的技术问题，本实施例能够解决该缺陷。
如图1所示，本发明提供一种OLED显示面板的制作方法，包括以下步骤：
S10，如图2所示，提供阵列基板10，所述阵列基板10包括衬底基板和薄膜晶体管阵列；
所述衬底基板可为玻璃基板或聚酰亚胺等柔性基板，所述薄膜晶体管阵列包括有源层、源漏极、栅极，所述阵列基板上还设置有栅极绝缘层、层间绝缘层、像素定义层，其结构可参考现有技术，这里不再赘述。
S20，在所述阵列基板10上依次形成第一ITO层21、反射层22、第二ITO层23，其中，所述第二ITO层23的膜层厚度大于所述第一ITO层21的膜层厚度；
先在所述阵列基板10上蒸镀ITO（Indium tin oxide，氧化铟锡）材料，以形成第一ITO层21；
再在所述第一ITO层21上蒸镀一层金属材料以形成反射层22，本实施例中的金属材料为银金属，银具有高反射率，能够将OLED的光线反射回去；
之后在所述反射层22上蒸镀一层ITO材料，以形成第二ITO层23；
其中，在蒸镀膜层的时候，将所述第二ITO层23蒸镀为膜厚大于所述第一ITO层21的膜厚，以用于即使光刻胶缺失，刻蚀工艺还在继续的情况下，所述第二ITO层23不会被完全刻蚀掉，还会保留一定厚度的膜层，进而避免下层的反射层22受到刻蚀影响。
S30，如图3所示，在所述第二ITO层23上形成图案化的光刻胶30；
首先，在所述第二ITO层23上均匀地涂布一层正性光刻胶材料，然后利用掩膜板对该光刻胶材料进行紫外线照射，之后利用显影液对曝光后的光刻胶材料进行显影，被光照到的部分发生化学性质的改变，溶解在显影液中，未被光照射到的光刻胶被保留下来，形成所述图案化的光刻胶30。
S40，利用同一道刻蚀工艺对所述第二ITO层23、反射层22、第一ITO层21进行刻蚀，以形成图案化的阳极层；
如图4所示，采用湿法刻蚀法对所述第二ITO层23进行刻蚀，以所述光刻胶30为自对准，所述第二ITO层23的被光刻胶覆盖的部分保留，其他部分被刻蚀掉，由于湿法刻蚀在沿薄膜厚度方向刻蚀的同时存在侧向刻蚀，所以湿法刻蚀会影响刻蚀精度，但误差在要求的精度范围内，且湿法刻蚀具有刻蚀速率快、选择比高、价格便宜等优点；
之后，以所述光刻胶30和刻蚀后的第二ITO层23为自对准，对所述反射层22进行刻蚀，形成图案化的反射层22；
如图5所示，在刻蚀过程中，随着刻蚀深度的加深和刻蚀时间的延长，光刻胶会有所缺失，导致膜层的部分表面裸露出来。光刻胶的缺失在刻蚀过程中的任意时刻，随着刻蚀时间的推移，缺失的几率增大，图5示意出在所述反射层22刻蚀完成后，光刻胶缺失的一种可能；
然后，以保留下来的所述光刻胶30和裸露出的所述第二ITO层23为自对准，对所述第一ITO层21进行刻蚀，由于部分光刻胶缺失造成所述第二ITO层23的部分表面裸露出来，所以在进行对所述第一ITO层21刻蚀的过程中，所述第二ITO层23的裸露部分也会受到刻蚀液的刻蚀；
在上一步S20中，所述第二ITO层23蒸镀的膜厚大于所述第一ITO层21的膜厚，避免在光刻胶缺失后，刻蚀液将所述反射层22的上方对应的第二ITO层23的膜层完全刻蚀掉，在本实施例中，所述第二ITO层23蒸镀的膜层厚度是所述第一ITO层21的膜层厚度的2倍，对应地，所述第二ITO层23的刻蚀时间大于所述第一ITO层21的刻蚀时间；
如图6所示，所述第一ITO层21刻蚀完成后，所述反射层22的上方对应的第二ITO层23保留有一定膜厚的膜层，虽然受到刻蚀液影响，但并未完全刻蚀掉，在即使发生光刻胶缺失的情况下，所述第二ITO层23还是完全覆盖所述反射层22，有效地保护了下层反射层免受刻蚀影响。
如图7所示，在所述S40之后，还包括剥离所述光刻胶30，图案化后的所述第一ITO层21、所述反射层22、所述第二ITO层一起形成复合结构的阳极层20，刻蚀后的所述第二ITO层23的部分膜层厚度小于或等于所述第一ITO层的膜层厚度，该部分膜层厚度对应于光刻胶缺失的区域。
刻蚀过程中，设定的刻蚀区域对应的某些位置的薄膜可能会存在残留，但是在刻蚀工艺中刻蚀残留是不被允许存在的，所以在实际刻蚀工艺中，会在计算好的平均刻蚀时间的基础上再延伸一定百分比的刻蚀时间（通常称为过刻蚀时间），保证无刻蚀残留，当设定第一ITO层21过刻蚀的百分比为30%时，在具体制作时，第二ITO层23蒸镀的膜层厚度是所述第一ITO膜层厚度的1.5倍以上，才能保证第二ITO层23对应的光刻胶缺失区域的膜层会薄薄的保留一定厚度，保护下层反射层22免受刻蚀影响。
S50，在所述阳极层20上制备OLED发光层（图中未示出）；
具体地，在所述第二ITO层23上制备所述OLED发光层，所述OLED发光层包括空穴注入层、空穴传输层、发光材料层、电子传输层、电子注入层；所述制备方法还包括在所述OLED发光层上制备阴极。
本发明提供的制作方法，同样适用于其他的形成三层膜层的结构，尤其适用于顶层蒸镀膜缺失造成不良影响的情况。
本发明还提供一种上述制作方法制备的OLED显示面板，包括阵列基板10、阳极层20、以及形成于所述阳极层20上的OLED发光层。
所述阵列基板包括衬底基板和设置于所述衬底基板上的薄膜晶体管阵列。
所述阳极层20形成于所述阵列基板10上，所述阵列基板10依次包括第一ITO层21、反射层22、以及第二ITO层23，其中，所述第二ITO层23覆盖所述反射层22，所述第二ITO层23的部分膜层厚度大于所述第一ITO层21的膜层厚度，所述阳极层20的具体结构请参见上述制作方法制备的结构，这里不再赘述。
有益效果：本发明提供的OLED显示面板的制作方法，通过增加顶层的ITO膜层的厚度，避免了在刻蚀过程中由于光刻胶的缺失，导致下层金属表面受到影响，进而保证了产品的品质稳定性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (12)

  1. 一种OLED显示面板，其中，包括：
    阵列基板，所述阵列基板包括衬底基板和设置于所述衬底基板上的薄膜晶体管阵列；
    阳极层，形成于所述阵列基板上，所述阳极层包括依次设置的第一ITO层、反射层、以及第二ITO层；
    OLED发光层，形成于所述阳极层上；其中，
    所述第二ITO层覆盖所述反射层，所述第二ITO层的部分膜层厚度大于所述第一ITO层的膜层厚度；所述第一ITO层、所述反射层、以及所述第二ITO层经过同一道刻蚀工艺形成，所述反射层材料为银金属。
  2. 根据权利要求1所述的OLED显示面板，其中，所述第二ITO层的部分膜层厚度是所述第一ITO层的膜层厚度的两倍。
  3. 一种OLED显示面板的制作方法，其中，包括以下步骤：
    S10，提供阵列基板，所述阵列基板包括衬底基板和薄膜晶体管阵列；
    S20，在所述阵列基板上依次形成第一ITO层、反射层、第二ITO层，其中，所述第二ITO层的膜层厚度大于所述第一ITO层的膜层厚度；
    S30，在所述第二ITO层上形成图案化的光刻胶；
    S40，利用同一道刻蚀工艺对所述第二ITO层、所述反射层、所述第一ITO层进行刻蚀，以形成图案化的阳极层；
    S50，在所述阳极层上制备OLED发光层。
  4. 根据权利要求3所述的OLED显示面板的制作方法，其中，在所述S20中，所述第二ITO层的膜层厚度是所述第一ITO层的膜层厚度的2倍。
  5. 根据权利要求4所述的OLED显示面板的制作方法，其中，所述第二ITO层的刻蚀时间大于所述第一ITO层的刻蚀时间。
  6. 根据权利要求5所述的OLED显示面板的制作方法，其中，所述S40包括：
    S401，以所述光刻胶为自对准，对所述第二ITO层进行刻蚀；
    S402，以所述光刻胶和所述第二ITO层为自对准，对所述反射层进行刻蚀；
    S403，以所述光刻胶和所述第二ITO层为自对准，对所述第一ITO层进行刻蚀，其中，所述第二ITO层覆盖所述反射层。
  7. 根据权利要求6所述的OLED显示面板的制作方法，其中，在所述S40之后，剥离所述光刻胶，图案化后的所述第一ITO层、所述反射层、所述第二ITO层一起形成所述阳极层。
  8. 根据权利要求6所述的OLED显示面板的制作方法，其中，经过刻蚀工艺后，所述第二ITO层的部分膜层厚度小于或等于所述第一ITO层的膜层厚度。
  9. 根据权利要求3所述的OLED显示面板的制作方法，其中，所述S20包括：
    S201，在所述阵列基板上蒸镀第一ITO层；
    S202，在所述第一ITO层上蒸镀反射层，所述反射层材料为银金属材料；
    S203，在所述反射层上蒸镀第二ITO层。
  10. 一种OLED显示面板，其中，包括：
    阵列基板，所述阵列基板包括衬底基板和设置于所述衬底基板上的薄膜晶体管阵列；
    阳极层，形成于所述阵列基板上，所述阳极层包括依次设置的第一ITO层、反射层、以及第二ITO层；
    OLED发光层，形成于所述阳极层上；其中，
    所述第二ITO层覆盖所述反射层，所述第二ITO层的部分膜层厚度大于所述第一ITO层的膜层厚度。
  11. 根据权利要求10所述的OLED显示面板，其中，所述第一ITO层、所述反射层、以及所述第二ITO层经过同一道刻蚀工艺形成。
  12. 根据权利要求10所述的OLED显示面板，其中，所述第二ITO层的部分膜层厚度是所述第一ITO层的膜层厚度的两倍。
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