WO2020111368A1 - Ingot growing apparatus - Google Patents

Ingot growing apparatus Download PDF

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Publication number
WO2020111368A1
WO2020111368A1 PCT/KR2018/015857 KR2018015857W WO2020111368A1 WO 2020111368 A1 WO2020111368 A1 WO 2020111368A1 KR 2018015857 W KR2018015857 W KR 2018015857W WO 2020111368 A1 WO2020111368 A1 WO 2020111368A1
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WO
WIPO (PCT)
Prior art keywords
guide
cable
ingot
ingot growth
driving unit
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PCT/KR2018/015857
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French (fr)
Korean (ko)
Inventor
배준영
이동근
오대균
이신형
박승빈
남우석
박재창
신종진
백성선
Original Assignee
웅진에너지 주식회사
일신테크(주)
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Publication of WO2020111368A1 publication Critical patent/WO2020111368A1/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Definitions

  • the present invention relates to an ingot growth device capable of maintaining a small orbital value of a cable despite the length of the ingot being produced.
  • a silicon wafer includes a single crystal growth process for making a single crystal ingot, a slicing process for slicing the single crystal ingot to obtain a thin disc-shaped wafer, and the wafer's cracks and distortions obtained by the slicing process. Grinding process to process the outer circumference to prevent the damage, lapping process to remove damage caused by mechanical processing remaining on the wafer, and polishing process to mirror the wafer And a cleaning process for polishing the polished wafer and removing abrasives or foreign substances attached to the wafer.
  • the crucible When growing a silicon single crystal ingot, the crucible is raised while advancing the axis supporting the crucible, and the liquid interface is maintained at the same height, and the silicon single crystal ingot is centered on the same axis as the rotational axis of the crucible and is opposite to the rotational direction of the crucible. Pull up while rotating.
  • the silicon single crystal ingot grown in this way is used for a substrate of a semiconductor device, solar power generation, etc. through the above-described process.
  • the necking, shouldering, body drawing, and tailing processes are processes in which seeds are brought into contact with a polysilicon melt to grow to the desired diameter and length of the single crystal ingot, so there are several processes in progress. Variables should be considered.
  • the conventional ingot growth apparatus 10 is pulled up while growing the ingot in the crucible 12, the pull head (PULL HEAD) that is the impression driving unit 20 uses the cable 11 to pull up the ingot.
  • the pull head (PULL HEAD) that is the impression driving unit 20 uses the cable 11 to pull up the ingot.
  • the cable 11 in the ingot growth apparatus 10 is fixed to the end of the pulling drive unit 20, the movement of the cable 11 by the guide 22 in the front, rear, left and right direction Movement is limited.
  • the cable guide 22 is fixedly installed inside the guide housing 21.
  • the guide fixing cover 21 is fixed to the cable guide 22 in the direction to limit the movement in the upper direction is installed on the upper portion of the guide housing (21). Therefore, the movement of the cable 11 in the front, rear, left, and right directions is restricted by the cable guide 22, and the fixing structure of the cable 11 can be said to be a structure guided at one point. That is, since there is no component capable of fixing the cable 11 from the cable guide 22 to the lower part, the lower part is capable of pivoting rotation and vibrates to the left and right to form a rotational trajectory 11a.
  • the cable of the ingot growth apparatus is also lengthened, so that the rotational trajectory of the cable increases, thereby increasing the overall size of the equipment.
  • the object of the present invention is to solve this problem, and by placing the cable guide limiting the movement of the cable at 2 points up and down, the ingot growth device capable of stable production by reducing the rotational trajectory of the cable even if the length of the target ingot increases. Is to provide
  • the present invention in the ingot growth apparatus including an impression driving unit for raising and lowering while rotating the cable from the top in order to grow the ingot in the chamber with a crucible therein, in the impression driving unit
  • a first guide in close contact with the cable to limit movement of the cables in the front, rear, left, and right directions;
  • a second guide in close contact with the cable so as to limit movement of the cable in the front-rear-left-right direction at a position spaced apart from the first guide in a downward direction in the impression driving unit;
  • the first guide is mounted and fixed on the top, the second guide is mounted and fixed on the bottom, a guide housing installed on the impression driving unit to support the first guide and the second guide; may include.
  • the guide housing is formed in a cylindrical shape, and a ventilation hole may be provided between the positions of the first guide and the second guide.
  • the second guide is formed in a cylindrical shape, and an inner groove may be formed in the guide housing so that the second guide can be seated.
  • a snap ring may be inserted and fixed under the second guide so that the second guide does not come off.
  • the second guide may be formed longer than the first guide.
  • it may further include a fixing cover assembled to the upper portion of the guide housing to limit the movement of the first guide in the upward direction.
  • the first guide and the second guide may be made of Teflon material.
  • the rotational trajectory of the cable can be kept small, thereby enabling stable ingot impression driving.
  • FIG. 1 is a front view of an ingot growth apparatus according to the prior art.
  • Figure 2 is a cross-sectional view of the cable guide portion of the pulling drive of the ingot growth apparatus according to the prior art.
  • FIG. 3 is a front view of the ingot growth apparatus according to the present invention.
  • FIG. 4 is a perspective view of the impression driving unit of the ingot growth apparatus according to the present invention.
  • FIG. 5 is a cross-sectional view of a cable guide housing that is a part of the ingot growth apparatus according to the present invention.
  • FIG. 6 is a perspective view of a cable guide housing which is a part of the ingot growth apparatus according to the present invention.
  • FIG. 7 is a half sectional view of a cable guide housing which is a part of the ingot growth apparatus according to the present invention.
  • FIG. 8 is an exploded perspective view of a cable guide housing which is a component of the ingot growth apparatus according to the present invention.
  • the present invention relates to an ingot growth apparatus 110 including an impression driving unit 120 that rotates and elevates while rotating the cable 111 from the top to grow the ingot in the chamber 112 with a crucible therein.
  • the ingot growth apparatus 110 according to the first embodiment of the present invention, the first guide 122, the second guide 124, the guide housing 121, and the fixing cover ( 123).
  • the first guide 122 may be in close contact with the cable 111 so as to limit the movement of the cable 111 in the front, rear, left, and right directions in the impression driving unit 120.
  • the first guide 122 is installed on the top of the guide housing 121 so that the components made of four circular rings are stacked and in close contact with the cable 111, after lamination, the fixing cover 123 ) Is assembled on the upper surface of the guide housing 121 so that it does not fall out.
  • Teflon which is resistant to heat
  • the second guide 124 is a front-to-left and right-to-left direction of the cable 111 at a position spaced downward from the first guide 122 in the impression driving unit 120. It is in close contact with the cable 111 to limit movement.
  • the second guide 124 is composed of two cylindrical members and assembled to the lower end of the guide housing 121.
  • an inner groove is formed in the guide housing 121 so that the second guide 124 can be seated, and the second guide 124 is inserted into the inner groove 121a of the guide housing 121. To settle down.
  • the second guide 124 is the guide housing 121 by forming a groove 121c for a snap ring having a larger inner diameter after the inner groove bottom of the guide housing 121 and the snap ring 125 is assembled and seated. It does not fall out.
  • the second guide 124 may be made of a heat-resistant Teflon material, similar to the first guide 122 described above.
  • the guide housing 121 referring to FIGS. 3 to 8, the first guide 122 is mounted and fixed at the top, and the second guide 124 is mounted and fixed at the bottom, and the first guide 122 ) And the second guide 124 are installed in the impression driving unit 120.
  • the guide housing 121 is formed in a cylindrical shape, and a ventilation hole 121a is provided between the positions of the first guide 122 and the second guide 124.
  • the guide housing 121 is formed with a flange at the upper end so as to be assembled with the fixing cover 123, a first guide 122 is inserted at the upper end, and a second guide 124 is inserted at the lower end. And assembled.
  • a tapered portion 121d is formed on an outer side of the lower end of the guide housing 121, and an inner diameter connected to the inner groove 121b to which the second guide 124 is seated and an inner groove 121b are further formed inside.
  • a largely formed snap ring groove 121c is formed. Therefore, when the snap ring 125 is assembled in the state in which the second guide 124 is inserted into the inner groove 121b, the second guide 124 is not removed from the guide housing 121.
  • the fixing cover 123 is assembled to the upper flange of the guide housing 121 to limit the movement of the first guide 122 in the upward direction, as described above.
  • the second guide 124 is configured to be formed to be longer than the first guide 122, but may also be formed vice versa.
  • first guide 122 and the second guide 124 is a Teflon material, but of course, other materials resistant to heat can be applied.
  • the ingot growth apparatus 110 is shown. As shown, there is a chamber 112 in which a crucible is built in, and in the crucible, an ingot is grown and rotates and rises. At this time, the ingot is rotated upward by the seed, the seed chuck, the cable 111, and the pulling driving unit 120, and grows.
  • the cable 111 is rotated and pulled in a state where the upper end is fixed by the pulling driving unit 120, and as described above, has a rotating track due to external environment and vibration.
  • 2.5mm rotational orbit occurs in the existing ingot growth device
  • 3.25mm rotational orbit is expected theoretically in the growth device for 4m ingot production. The deviation was reduced.
  • the impression driving unit 120 of the ingot growth apparatus is shown.
  • a guide housing 121 is provided at the center of the impression driving unit 120.
  • the cable 111 is guided and passed through the center of the guide housing 121, and the movement of the cable 111 is restricted to the front, rear, left, and right, so that the rotational trajectory 111a is limited.
  • a guide housing 121 which is a part of the ingot growth apparatus 110 according to the present invention.
  • the fixing cover 123 is assembled to the flange formed on the upper portion of the guide housing 121 so that the assemblies constituting the first guide 122 do not fall upward, and the guide housing 121 has a lower portion.
  • the snap ring 125 is finally assembled so that it does not come off.
  • the cable 111 passes through the center of the first guide 122 and the guide housing 121, and then passes through the center of the second guide 124 again and extends to the chamber 112.
  • the cable 111 since the guide limiting the movement of the front and rear and right and left of the cable 111 is the second guide 124, the cable 111 has a rotational orbit based on the guide. It has a smaller rotational trajectory (111a) than the one based on the guide (122).
  • the cable 111 generated by external force is formed by guiding the guides at two points, that is, two first guides 122 and second guides 124, rather than one guide limiting the front, rear, left, and right movements of the cable 111. ) Vibration is reduced to enable more stable operation.
  • the present invention can be applied to an ingot growth apparatus for manufacturing a wafer.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Disclosed is an ingot growing apparatus capable of maintaining an orbit value of a cable to be small in spite of elongation of the length of an ingot being produced. In an ingot growing apparatus according to the present invention comprising a pulling driving unit which moves a cable vertically from an upper portion while rotating same to grow an ingot in a chamber provided with a crucible therein, the ingot growing apparatus comprises: a first guide which comes into close contact with the cable so as to restrict movement of the cable in the frontward, rearward, leftward, or rightward direction in the pulling driving unit; a second guide which comes into close contact with the cable at a position apart from the first guide in the downward direction so as to restrict movement of the cable in the frontward, rearward, leftward, or rightward direction in the pulling driving unit; and a guide housing having an upper end to which the first guide is installed and fixed and a lower end to which the second guide is installed and fixed, the guide housing being installed in the pulling driving unit to support the first guide and the second guide.

Description

잉곳 성장장치Ingot growth device
본 발명은 생산되는 잉곳의 길이가 길어짐에도 불구하고 케이블의 궤도 값을 작게 유지할 수 있는 잉곳 성장장치에 관한 것이다.The present invention relates to an ingot growth device capable of maintaining a small orbital value of a cable despite the length of the ingot being produced.
일반적으로, 실리콘 웨이퍼는, 단결정 잉곳(Ingot)을 만들기 위한 단결정 성장 공정과, 단결정 잉곳을 슬라이싱(Slicing)하여 얇은 원판 모양의 웨이퍼를 얻는 슬라이싱 공정과, 상기 슬라이싱 공정에 의해 얻어진 웨이퍼의 깨짐, 일그러짐을 방지하기 위해 그 외주부를 가공하는 그라인딩(Grinding) 공정과, 상기 웨이퍼에 잔존하는 기계적 가공에 의한 손상(Damage)을 제거하는 랩핑(Lapping) 공정과, 상기 웨이퍼를 경면화하는 연마(Polishing) 공정과, 연마된 웨이퍼를 연마하고 웨이퍼에 부착된 연마제나 이물질을 제거하는 세정 공정을 포함하여 이루어진다.In general, a silicon wafer includes a single crystal growth process for making a single crystal ingot, a slicing process for slicing the single crystal ingot to obtain a thin disc-shaped wafer, and the wafer's cracks and distortions obtained by the slicing process. Grinding process to process the outer circumference to prevent the damage, lapping process to remove damage caused by mechanical processing remaining on the wafer, and polishing process to mirror the wafer And a cleaning process for polishing the polished wafer and removing abrasives or foreign substances attached to the wafer.
실리콘 단결정 잉곳을 성장시킬 때에는 도가니를 지지하는 축을 전진시키면서 도가니를 상승시켜 고, 액 계면이 동일한 높이를 유지하도록 하고, 실리콘 단결정 잉곳은 도가니의 회전축과 동일한 축을 중심으로 하여 도가니의 회전방향과 반대방향으로 회전시키면서 끌어올린다.When growing a silicon single crystal ingot, the crucible is raised while advancing the axis supporting the crucible, and the liquid interface is maintained at the same height, and the silicon single crystal ingot is centered on the same axis as the rotational axis of the crucible and is opposite to the rotational direction of the crucible. Pull up while rotating.
이렇게 성장된 실리콘 단결정 잉곳은 상술한 공정을 거쳐서, 반도체 디바이스의 기판, 태양광 발전 등에 사용하게 된다.The silicon single crystal ingot grown in this way is used for a substrate of a semiconductor device, solar power generation, etc. through the above-described process.
이러한 실리콘 단결정 잉곳의 성장 공정 중에서 넥킹, 숄더링, 바디 그로잉, 테일링 공정은 종자를 폴리 실리콘 용융액과 접촉시킨 상태에서 목적하는 단결정 잉곳의 직경 및 길이까지 성장을 시키는 공정이므로 공정 진행 중 여러 가지 공정변수를 고려해야 한다.Among the growth processes of the silicon single crystal ingot, the necking, shouldering, body drawing, and tailing processes are processes in which seeds are brought into contact with a polysilicon melt to grow to the desired diameter and length of the single crystal ingot, so there are several processes in progress. Variables should be considered.
종래 잉곳 성장장치(10)는 도가니(12)에서 잉곳을 성장시키면서 끌어 올리게 되는데, 인상 구동부(20)인 풀 헤드(PULL HEAD)가 케이블(11)을 이용하여 잉곳을 끌어 올리게 된다.The conventional ingot growth apparatus 10 is pulled up while growing the ingot in the crucible 12, the pull head (PULL HEAD) that is the impression driving unit 20 uses the cable 11 to pull up the ingot.
이때, 도 1을 참고하면, 잉곳과 인상 구동부(20)는 서로 케이블(11)에 의해 연결되어 있으므로 잉곳의 회전 시 발생되는 진동과 잉곳의 무게에 의해 단결정 잉곳의 중심축이 좌우로 흔들리는 임의의 회전궤도(orbit)(11a)를 형성하게 된다.In this case, referring to FIG. 1, since the ingot and the pulling driving unit 20 are connected to each other by a cable 11, the central axis of the single crystal ingot is shaken from side to side by vibration generated during rotation of the ingot and the weight of the ingot. An orbit 11a is formed.
도 2를 참고하면, 종래기술에 의한 잉곳 성장장치(10)에서 케이블(11)은 인상 구동부(20)에 끝단이 고정되고, 가이드(22)에 의해 케이블(11) 움직임이 전후좌우 방향으로의 이동이 제한된다. 케이블 가이드(22)는 가이드 하우징(21) 내부에 고정 설치된다. 또한 케이블 가이드(22)의 상측방향으로의 움직임을 제한하도록 그 방향으로 고정하는 가이드 고정 커버(21)가 가이드 하우징(21) 상부에 설치된 구조이다. 따라서 케이블(11)은 케이블 가이드(22)에 의해 전후좌우 방향으로의 움직임이 제한되도록 되어 있고, 케이블(11)의 고정구조는 1포인트에서 가이드하는 구조라 할 수 있다. 즉 케이블 가이드(22)로부터 하부 쪽으로 케이블(11)을 고정할 수 있는 구성품이 없기 때문에 그 아랫부분은 피봇회전이 가능하여 좌우로 진동하여 그로부터 시작하여 회전궤도(11a)를 형성하게 된다.Referring to Figure 2, the cable 11 in the ingot growth apparatus 10 according to the prior art is fixed to the end of the pulling drive unit 20, the movement of the cable 11 by the guide 22 in the front, rear, left and right direction Movement is limited. The cable guide 22 is fixedly installed inside the guide housing 21. In addition, the guide fixing cover 21 is fixed to the cable guide 22 in the direction to limit the movement in the upper direction is installed on the upper portion of the guide housing (21). Therefore, the movement of the cable 11 in the front, rear, left, and right directions is restricted by the cable guide 22, and the fixing structure of the cable 11 can be said to be a structure guided at one point. That is, since there is no component capable of fixing the cable 11 from the cable guide 22 to the lower part, the lower part is capable of pivoting rotation and vibrates to the left and right to form a rotational trajectory 11a.
이에 따라, 종래기술에 의한 잉곳 성장장치는 생산되는 잉곳의 길이가 길어짐에 따라 잉곳 성장장치의 케이블도 길어져 케이블의 회전궤도가 증가하게 되어 장비 전체 크기가 증가하게 되는데 이를 줄이기 어려운 문제점이 있었다.Accordingly, in the ingot growth apparatus according to the prior art, as the length of the ingot produced is longer, the cable of the ingot growth apparatus is also lengthened, so that the rotational trajectory of the cable increases, thereby increasing the overall size of the equipment.
본 발명의 목적은, 이러한 문제점을 해결하기 위한 것으로, 케이블의 움직임을 제한하는 케이블 가이드를 상하 2 포인트에 둠으로써 목표 잉곳의 길이가 증가하더라도 케이블의 회전궤도를 작게 하여 안정적인 생산이 가능한 잉곳 성장장치를 제공하는 것이다.The object of the present invention is to solve this problem, and by placing the cable guide limiting the movement of the cable at 2 points up and down, the ingot growth device capable of stable production by reducing the rotational trajectory of the cable even if the length of the target ingot increases. Is to provide
상기한 목적을 달성하기 위한 구체적인 수단으로서 본 발명은, 내부에 도가니를 구비한 챔버에서 잉곳을 성장시키기 위하여 상부로부터 케이블을 회전시키면서 승강시키는 인상 구동부를 포함하는 잉곳 성장장치에 있어서, 상기 인상 구동부에서 상기 케이블의 전후좌우 방향의 움직임을 제한하도록 상기 케이블에 밀착되는 제1가이드; 상기 인상 구동부에서 상기 제1가이드로부터 하측 방향으로 이격된 위치에서 상기 케이블의 전후좌우 방향의 움직임을 제한하도록 상기 케이블에 밀착되는 제2가이드; 및 상기 제1가이드는 상단에 장착 고정되고 상기 제2가이드는 하단에 장착 고정되며, 상기 제1가이드와 제2가이드를 지지하도록 상기 인상 구동부에 설치된 가이드 하우징;을 포함할 수 있다.As a specific means for achieving the above object, the present invention, in the ingot growth apparatus including an impression driving unit for raising and lowering while rotating the cable from the top in order to grow the ingot in the chamber with a crucible therein, in the impression driving unit A first guide in close contact with the cable to limit movement of the cables in the front, rear, left, and right directions; A second guide in close contact with the cable so as to limit movement of the cable in the front-rear-left-right direction at a position spaced apart from the first guide in a downward direction in the impression driving unit; And the first guide is mounted and fixed on the top, the second guide is mounted and fixed on the bottom, a guide housing installed on the impression driving unit to support the first guide and the second guide; may include.
바람직하게는, 상기 가이드 하우징은 원통형으로 이루어지고, 상기 제1가이드와 제2가이드의 위치 사이에는 통기홀이 구비될 수 있다.Preferably, the guide housing is formed in a cylindrical shape, and a ventilation hole may be provided between the positions of the first guide and the second guide.
바람직하게는, 상기 제2가이드는 원통형 형태로 이루어지고, 상기 가이드 하우징에는 상기 제2가이드가 안착될 수 있도록 내측홈이 형성될 수 있다.Preferably, the second guide is formed in a cylindrical shape, and an inner groove may be formed in the guide housing so that the second guide can be seated.
바람직하게는, 상기 제2가이드가 빠지지 않도록 상기 제2가이드 하부에는 스냅링이 삽입되어 고정될 수 있다.Preferably, a snap ring may be inserted and fixed under the second guide so that the second guide does not come off.
바람직하게는, 상기 제2가이드는 상기 제1가이드보다 길게 형성될 수 있다.Preferably, the second guide may be formed longer than the first guide.
바람직하게는, 상기 제1가이드의 상측방향으로의 움직임을 제한하도록 상기 가이드 하우징 상부에 조립된 고정용 커버를 더 포함할 수 있다.Preferably, it may further include a fixing cover assembled to the upper portion of the guide housing to limit the movement of the first guide in the upward direction.
바람직하게는, 상기 제1가이드 및 제2가이드는 테프론 재질로 이루어질 수 있다.Preferably, the first guide and the second guide may be made of Teflon material.
상기한 바와 같은 본 발명에 의하면 다음과 같은 효과가 있다.According to the present invention as described above has the following effects.
(1) 본 발명은 케이블의 움직임을 제한하는 최하부의 제2가이드가 제1가이드보다 낮은 위치에 설치되기 때문에 케이블의 회전궤도를 작게 유지할 수 있어 안정적인 잉곳 인상 구동이 가능해진다.(1) According to the present invention, since the second guide at the bottom limiting the movement of the cable is installed at a lower position than the first guide, the rotational trajectory of the cable can be kept small, thereby enabling stable ingot impression driving.
(2) 본 발명은 케이블의 움직임을 제한하는 가이드를 2 포인트에서 실행하기 때문에 케이블의 안정적인 운전이 가능하다.(2) In the present invention, since the guide limiting the movement of the cable is executed at two points, stable operation of the cable is possible.
도 1은 종래기술에 의한 잉곳 성장장치의 정면도이다.1 is a front view of an ingot growth apparatus according to the prior art.
도 2는 종래기술에 의한 잉곳 성장장치의 인상 구동부의 케이블 가이드 부분의 단면도이다.Figure 2 is a cross-sectional view of the cable guide portion of the pulling drive of the ingot growth apparatus according to the prior art.
도 3은 본 발명에 의한 잉곳 성장장치의 정면도이다.3 is a front view of the ingot growth apparatus according to the present invention.
도 4는 본 발명에 의한 잉곳 성장장치의 인상 구동부의 투시도이다.4 is a perspective view of the impression driving unit of the ingot growth apparatus according to the present invention.
도 5는 본 발명에 의한 잉곳 성장장치의 일부 구성요소인 케이블 가이드 하우징의 단면도이다.5 is a cross-sectional view of a cable guide housing that is a part of the ingot growth apparatus according to the present invention.
도 6은 본 발명에 의한 잉곳 성장장치의 일부 구성요소인 케이블 가이드 하우징의 사시도이다.6 is a perspective view of a cable guide housing which is a part of the ingot growth apparatus according to the present invention.
도 7은 본 발명에 의한 잉곳 성장장치의 일부 구성요소인 케이블 가이드 하우징의 반단면도이다.7 is a half sectional view of a cable guide housing which is a part of the ingot growth apparatus according to the present invention.
도 8은 본 발명에 의한 잉곳 성장장치의 일부 구성요소인 케이블 가이드 하우징의 분해 사시도이다.8 is an exploded perspective view of a cable guide housing which is a component of the ingot growth apparatus according to the present invention.
이하, 첨부한 도면을 참고로 하여 본 발명의 실시예에 대하여 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. 도면에서 본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 동일 또는 유사한 구성요소에 대해서는 동일한 참조부호를 붙였다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily practice. The present invention can be implemented in many different forms and is not limited to the embodiments described herein. In the drawings, parts not related to the description are omitted in order to clearly describe the present invention, and the same reference numerals are attached to the same or similar elements throughout the specification.
본 명세서에서, "포함하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성 요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성 요소, 부분품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다. 또한, 층, 막, 영역, 판 등의 부분이 다른 부분 "위에" 있다고 할 경우, 이는 다른 부분 "바로 위에" 있는 경우뿐만 아니라 그 중간에 또 다른 부분이 있는 경우도 포함한다. 반대로 층, 막, 영역, 판 등의 부분이 다른 부분 "아래에" 있다고 할 경우, 이는 다른 부분 "바로 아래에" 있는 경우뿐만 아니라 그 중간에 또 다른 부분이 있는 경우도 포함한다.In this specification, terms such as “include” or “have” are intended to indicate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, and that one or more other features are present. It should be understood that the presence or addition possibilities of fields or numbers, steps, actions, components, parts or combinations thereof are not excluded in advance. In addition, when a part such as a layer, film, region, plate, etc. is said to be "above" another part, this includes not only the case "directly above" the other part but also another part in the middle. Conversely, when a portion of a layer, film, region, plate, or the like is said to be “under” another portion, this includes not only the case “underneath” another portion, but also another portion in the middle.
이하에서는 도면을 참조하여 본 발명의 일 실시예에 따른 잉곳 성장장치(110)를 보다 상세히 설명하도록 한다.Hereinafter, the ingot growth apparatus 110 according to an embodiment of the present invention will be described in more detail with reference to the drawings.
본 발명은 내부에 도가니를 구비한 챔버(112)에서 잉곳을 성장시키기 위하여 상부로부터 케이블(111)을 회전시키면서 승강시키는 인상 구동부(120)를 포함하는 잉곳 성장장치(110)에 관련된다.The present invention relates to an ingot growth apparatus 110 including an impression driving unit 120 that rotates and elevates while rotating the cable 111 from the top to grow the ingot in the chamber 112 with a crucible therein.
본 발명의 제1실시예에 따른 잉곳 성장장치(110)는 도 3 내지 도 8을 참고하면, 제1가이드(122), 제2가이드(124), 가이드 하우징(121), 그리고 고정용 커버(123)를 포함한다.Referring to Figures 3 to 8, the ingot growth apparatus 110 according to the first embodiment of the present invention, the first guide 122, the second guide 124, the guide housing 121, and the fixing cover ( 123).
상기 제1가이드(122)는, 도 3 내지 도 8을 참고하면, 상기 인상 구동부(120)에서 상기 케이블(111)의 전후좌우 방향의 움직임을 제한하도록 상기 케이블(111)에 밀착될 수 있다.Referring to FIGS. 3 to 8, the first guide 122 may be in close contact with the cable 111 so as to limit the movement of the cable 111 in the front, rear, left, and right directions in the impression driving unit 120.
이때, 상기 제1가이드(122)는 4개의 원형 링 형태로 이루어진 부품들이 적층되어 상기 케이블(111)에 밀착하도록 상기 가이드 하우징(121) 상단에 설치되는 바, 적층 후, 상기 고정용 커버(123)가 상기 가이드 하우징(121) 상면에 조립되어 상측으로 빠지지 않게 된다.At this time, the first guide 122 is installed on the top of the guide housing 121 so that the components made of four circular rings are stacked and in close contact with the cable 111, after lamination, the fixing cover 123 ) Is assembled on the upper surface of the guide housing 121 so that it does not fall out.
이때, 상기 제1가이드(122)의 재질로는 열에 강한 테프론(Teflon)을 적용할 수도 있다.At this time, as the material of the first guide 122, Teflon, which is resistant to heat, may be applied.
상기 제2가이드(124)는, 도 3 내지 도 8을 참고하면, 상기 인상 구동부(120)에서 상기 제1가이드(122)로부터 하측 방향으로 이격된 위치에서 상기 케이블(111)의 전후좌우 방향의 움직임을 제한하도록 상기 케이블(111)에 밀착된다.Referring to FIGS. 3 to 8, the second guide 124 is a front-to-left and right-to-left direction of the cable 111 at a position spaced downward from the first guide 122 in the impression driving unit 120. It is in close contact with the cable 111 to limit movement.
이때, 상기 제2가이드(124)는, 도 8을 참고하면, 2개의 원통형 부재로 이루어져 상기 가이드 하우징(121)의 하단부에 조립된다. At this time, referring to FIG. 8, the second guide 124 is composed of two cylindrical members and assembled to the lower end of the guide housing 121.
이때, 상기 가이드 하우징(121)에는 상기 제2가이드(124)가 안착될 수 있도록 내측홈이 형성되고, 상기 가이드 하우징(121)의 내측홈(121a)에 상기 제2가이드(124)가 삽입되어 안착된다.At this time, an inner groove is formed in the guide housing 121 so that the second guide 124 can be seated, and the second guide 124 is inserted into the inner groove 121a of the guide housing 121. To settle down.
이때, 상기 제2가이드(124)가 빠지지 않도록 상기 제2가이드(124) 하부에는 스냅링(125)이 삽입되어 고정된다. 상기 가이드 하우징(121)의 내측홈 하부에 이어서 더 내경이 큰 스냅링용 홈(121c)이 형성되고, 상기 스냅링(125)이 조립되어 안착됨으로써 상기 제2가이드(124)가 상기 가이드 하우징(121)으로부터 빠지지 않게 된다.At this time, a snap ring 125 is inserted and fixed under the second guide 124 so that the second guide 124 does not fall out. The second guide 124 is the guide housing 121 by forming a groove 121c for a snap ring having a larger inner diameter after the inner groove bottom of the guide housing 121 and the snap ring 125 is assembled and seated. It does not fall out.
이때, 상기 제2가이드(124)는 전술한 제1가이드(122)와 마찬가지로 열에 강한 테프론(Teflon) 재질로 이루어질 수 있다.At this time, the second guide 124 may be made of a heat-resistant Teflon material, similar to the first guide 122 described above.
상기 가이드 하우징(121)은, 도 3 내지 도 8을 참고하면, 상기 제1가이드(122)는 상단에 장착 고정되고 상기 제2가이드(124)는 하단에 장착 고정되며, 상기 제1가이드(122)와 제2가이드(124)를 지지하도록 상기 인상 구동부(120)에 설치된다.The guide housing 121, referring to FIGS. 3 to 8, the first guide 122 is mounted and fixed at the top, and the second guide 124 is mounted and fixed at the bottom, and the first guide 122 ) And the second guide 124 are installed in the impression driving unit 120.
이때, 상기 가이드 하우징(121)은 원통형으로 이루어지고, 상기 제1가이드(122)와 제2가이드(124)의 위치 사이에는 통기홀(121a)이 구비된다.In this case, the guide housing 121 is formed in a cylindrical shape, and a ventilation hole 121a is provided between the positions of the first guide 122 and the second guide 124.
이때, 상기 가이드 하우징(121)은 상단부에 플랜지가 형성되어 상기 고정용 커버(123)와 조립될 수 있도록 되어 있고, 상단부에는 제1가이드(122)가, 하단부에는 제2가이드(124)가 삽입되어 조립된다.At this time, the guide housing 121 is formed with a flange at the upper end so as to be assembled with the fixing cover 123, a first guide 122 is inserted at the upper end, and a second guide 124 is inserted at the lower end. And assembled.
이때, 상기 가이드 하우징(121)의 하단부 외측에는 테이퍼부(121d)가 형성되고, 내측에는 상기 제2가이드(124)가 안착되는 내측홈(121b), 그리고 내측홈(121b)과 연결된 내경이 더 크게 형성된 스냅링용 홈(121c)이 형성된다. 따라서 상기 제2가이드(124)가 내측홈(121b)에 삽입된 상태에서 스냅링(125)을 조립하면 상기 제2가이드(124)가 가이드 하우징(121)으로부터 빠지지 않게 된다.At this time, a tapered portion 121d is formed on an outer side of the lower end of the guide housing 121, and an inner diameter connected to the inner groove 121b to which the second guide 124 is seated and an inner groove 121b are further formed inside. A largely formed snap ring groove 121c is formed. Therefore, when the snap ring 125 is assembled in the state in which the second guide 124 is inserted into the inner groove 121b, the second guide 124 is not removed from the guide housing 121.
상기 고정용 커버(123)는, 도 3 내지 도 8을 참고하면, 전술한 바와 같이, 제1가이드(122)의 상측방향으로의 움직임을 제한하도록 상기 가이드 하우징(121) 상부 플랜지에 조립된다.3 to 8, the fixing cover 123 is assembled to the upper flange of the guide housing 121 to limit the movement of the first guide 122 in the upward direction, as described above.
한편, 상기 제2가이드(124)는 상기 제1가이드(122)보다 길게 형성되도록 구성하고 있으나, 그 반대로 형성할 수도 있다.On the other hand, the second guide 124 is configured to be formed to be longer than the first guide 122, but may also be formed vice versa.
또한, 상기 제1가이드(122)와 제2가이드(124)는 테프론 재질을 적용하였으나, 열에 강한 다른 재질을 적용할 수 있음은 물론이다.In addition, the first guide 122 and the second guide 124 is a Teflon material, but of course, other materials resistant to heat can be applied.
도 3을 참고하면, 본 발명에 의한 잉곳 성장장치(110)가 도시되어 있다. 도시된 바와 같이 하부에는 도가니가 내장된 챔버(112)가 있고, 도가니에서는 잉곳이 성장되어 회전하면서 상승하게 된다. 이때 잉곳은 시드, 시드척, 케이블(111), 인상 구동부(120)에 의해 상측으로 회전 인상되며 성장하게 된다.Referring to Figure 3, the ingot growth apparatus 110 according to the present invention is shown. As shown, there is a chamber 112 in which a crucible is built in, and in the crucible, an ingot is grown and rotates and rises. At this time, the ingot is rotated upward by the seed, the seed chuck, the cable 111, and the pulling driving unit 120, and grows.
이때, 상기 케이블(111)은 인상 구동부(120)에 의해 상단이 고정된 상태에서 회전 인상되고, 전술한 바와 같이 외부환경과 진동에 의해 회전궤도를 가지게 된다. 기존 잉곳 성장장치에서 2.5mm 회전궤도 발생 시, 4m 잉곳 생산용 성장장치에서 이론 상 3.25mm 회전궤도 발생이 예상되었으나, 본 발명에서는 회전궤도(111a)를 2.5mm 이내로 맞추어 케이블(111)의 회전 시 편차를 감소시킨 것이다.At this time, the cable 111 is rotated and pulled in a state where the upper end is fixed by the pulling driving unit 120, and as described above, has a rotating track due to external environment and vibration. When 2.5mm rotational orbit occurs in the existing ingot growth device, 3.25mm rotational orbit is expected theoretically in the growth device for 4m ingot production. The deviation was reduced.
도 4를 참고하면 본 발명에 의한 잉곳 성장장치의 인상 구동부(120)가 도시되어 있다. 상기 인상 구동부(120)의 중앙에 가이드 하우징(121)이 구비되어 있다. 상기 가이드 하우징(121)의 중앙으로 케이블(111)이 안내되면서 통과되도록 되어 있고, 케이블(111)은 전후좌우로의 움직임을 제한받게 되어 회전궤도(111a)가 한정된다.Referring to Figure 4, the impression driving unit 120 of the ingot growth apparatus according to the present invention is shown. A guide housing 121 is provided at the center of the impression driving unit 120. The cable 111 is guided and passed through the center of the guide housing 121, and the movement of the cable 111 is restricted to the front, rear, left, and right, so that the rotational trajectory 111a is limited.
도 5내지 도 8을 참고하면, 본 발명에 의한 잉곳 성장장치(110)의 일부 구성요소인 가이드 하우징(121)이 도시되어 있다. 도면을 참고하면, 가이드 하우징(121)의 상부에 형성된 플랜지에 고정용 커버(123)가 조립되어 제1가이드(122)를 이루는 어셈블리들이 상측으로 빠지지 않게 되어 있고, 가이드 하우징(121) 하부에는 제2가이드(124)가 조립된 다음 스냅링(125)이 마지막으로 조립되어 빠지지 않도록 되어 있다.5 to 8, a guide housing 121 is shown which is a part of the ingot growth apparatus 110 according to the present invention. Referring to the drawings, the fixing cover 123 is assembled to the flange formed on the upper portion of the guide housing 121 so that the assemblies constituting the first guide 122 do not fall upward, and the guide housing 121 has a lower portion. After the two guides 124 are assembled, the snap ring 125 is finally assembled so that it does not come off.
이때, 상기 케이블(111)은 제1가이드(122)의 중앙과 가이드 하우징(121)을 통과한 다음, 제2가이드(124)의 중앙을 다시 통과하여 챔버(112)까지 연장된다.At this time, the cable 111 passes through the center of the first guide 122 and the guide housing 121, and then passes through the center of the second guide 124 again and extends to the chamber 112.
이때, 도 5를 참고하면, 상기 케이블(111)의 전후좌우의 움직임을 마지막으로 제한하는 가이드는 제2가이드(124)이기 때문에 그 점을 기준으로 케이블(111)이 회전궤도를 가지게 되기 때문에 제1가이드(122)를 기준으로 한 경우보다 작은 회전궤도(111a)를 가지게 된다.At this time, referring to FIG. 5, since the guide limiting the movement of the front and rear and right and left of the cable 111 is the second guide 124, the cable 111 has a rotational orbit based on the guide. It has a smaller rotational trajectory (111a) than the one based on the guide (122).
더불어, 상기 케이블(111)의 전후좌우 이동을 제한하는 가이드가 하나가 아니라 제1가이드(122)와 제2가이드(124) 두 개로, 즉 2 포인트에서 가이드하도록 이루어져 외력에 의해 발생되는 케이블(111)의 진동이 저감되어 더욱 안정적인 운전이 가능하게 된다.In addition, the cable 111 generated by external force is formed by guiding the guides at two points, that is, two first guides 122 and second guides 124, rather than one guide limiting the front, rear, left, and right movements of the cable 111. ) Vibration is reduced to enable more stable operation.
이상에서 본 발명의 일 실시예에 대하여 설명하였으나, 본 발명의 사상은 본 명세서에 제시되는 실시 예에 제한되지 아니하며, 본 발명의 사상을 이해하는 당업자는 동일한 사상의 범위 내에서, 구성요소의 부가, 변경, 삭제, 추가 등에 의해서 다른 실시 예를 용이하게 제안할 수 있을 것이나, 이 또한 본 발명의 사상범위 내에 든다고 할 것이다.Although one embodiment of the present invention has been described above, the spirit of the present invention is not limited to the embodiments presented herein, and those skilled in the art to understand the spirit of the present invention may add elements within the scope of the same spirit. However, other embodiments may be easily proposed by changing, deleting, adding, or the like, but it will also be considered to be within the scope of the present invention.
본 발명은 웨이퍼를 제조하기 위한 잉곳 성장장치에 적용될 수 있다.The present invention can be applied to an ingot growth apparatus for manufacturing a wafer.

Claims (7)

  1. 내부에 도가니를 구비한 챔버에서 잉곳을 성장시키기 위하여 상부로부터 케이블을 회전시키면서 승강시키는 인상 구동부를 포함하는 잉곳 성장장치에 있어서,In the ingot growth apparatus including an impression driving unit for raising and lowering while rotating the cable from the top to grow the ingot in the chamber having a crucible therein,
    상기 인상 구동부에서 상기 케이블의 전후좌우 방향의 움직임을 제한하도록 상기 케이블에 밀착되는 제1가이드;A first guide in close contact with the cable so as to limit movement of the cable in the front, rear, left, and right directions in the pulling driver;
    상기 인상 구동부에서 상기 제1가이드로부터 하측 방향으로 이격된 위치에서 상기 케이블의 전후좌우 방향의 움직임을 제한하도록 상기 케이블에 밀착되는 제2가이드;A second guide in close contact with the cable so as to limit movement of the cable in the front-rear-left-right direction at a position spaced apart from the first guide in a downward direction in the impression driving unit;
    상기 제1가이드는 상단에 장착 고정되고 상기 제2가이드는 하단에 장착 고정되며, 상기 제1가이드와 제2가이드를 지지하도록 상기 인상 구동부에 설치된 가이드 하우징;The first guide is mounted and fixed on the top, the second guide is mounted and fixed on the bottom, a guide housing installed on the impression driving unit to support the first guide and the second guide;
    을 포함하는 잉곳 성장장치.Ingot growth device comprising a.
  2. 제1항에 있어서,According to claim 1,
    상기 가이드 하우징은 원통형으로 이루어지고, 상기 제1가이드와 제2가이드의 위치 사이에는 통기홀이 구비된 잉곳 성장장치.The guide housing is formed in a cylindrical shape, an ingot growth device having a ventilation hole between the positions of the first guide and the second guide.
  3. 제1항에 있어서,According to claim 1,
    상기 제2가이드는 원통형 형태로 이루어지고, 상기 가이드 하우징에는 상기 제2가이드가 안착될 수 있도록 내측홈이 형성된 잉곳 성장장치.The second guide is made of a cylindrical shape, the guide housing is an ingot growth device having an inner groove formed so that the second guide can be seated.
  4. 제3항에 있어서,According to claim 3,
    상기 제2가이드가 빠지지 않도록 상기 제2가이드 하부에는 스냅링이 삽입되어 고정된 잉곳 성장장치.An ingot growth device in which a snap ring is inserted and fixed to the lower portion of the second guide so that the second guide does not fall out.
  5. 제1항에 있어서,According to claim 1,
    상기 제2가이드는 상기 제1가이드보다 길게 형성된 잉곳 성장장치.The second guide is an ingot growth device formed longer than the first guide.
  6. 제1항에 있어서,According to claim 1,
    상기 제1가이드의 상측방향으로의 움직임을 제한하도록 상기 가이드 하우징 상부에 조립된 고정용 커버를 더 포함하는 잉곳 성장장치.An ingot growth apparatus further comprising a fixing cover assembled on an upper portion of the guide housing to limit movement of the first guide in an upward direction.
  7. 제1항에 있어서,According to claim 1,
    상기 제1가이드 및 제2가이드는 테프론 재질로 이루어진 잉곳 성장장치.The first guide and the second guide are ingot growth devices made of Teflon.
PCT/KR2018/015857 2018-11-28 2018-12-13 Ingot growing apparatus WO2020111368A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079894A (en) * 1997-03-31 1998-11-25 모리 레이자로 Monocrystalline pulling apparatus, single crystal supporting mechanism and single crystal pulling method
KR20110088687A (en) * 2010-01-29 2011-08-04 (주)코원에프아이에스 Silicon single crystal ingot forming apparatus with double guider
KR20140024601A (en) * 2012-08-20 2014-03-03 주식회사 엘지실트론 Single crystal grower and apparatus and method for supplying raw material to it
KR101402842B1 (en) * 2013-01-14 2014-06-03 주식회사 엘지실트론 Apparatus for manufacturing ingot having single crystal
KR20160068229A (en) * 2014-12-05 2016-06-15 주식회사 엘지실트론 Growing control apparatus of the ingot

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079894A (en) * 1997-03-31 1998-11-25 모리 레이자로 Monocrystalline pulling apparatus, single crystal supporting mechanism and single crystal pulling method
KR20110088687A (en) * 2010-01-29 2011-08-04 (주)코원에프아이에스 Silicon single crystal ingot forming apparatus with double guider
KR20140024601A (en) * 2012-08-20 2014-03-03 주식회사 엘지실트론 Single crystal grower and apparatus and method for supplying raw material to it
KR101402842B1 (en) * 2013-01-14 2014-06-03 주식회사 엘지실트론 Apparatus for manufacturing ingot having single crystal
KR20160068229A (en) * 2014-12-05 2016-06-15 주식회사 엘지실트론 Growing control apparatus of the ingot

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