KR20110088687A

KR20110088687A - Silicon single crystal ingot forming apparatus with double guider

Info

Publication number: KR20110088687A
Application number: KR1020100008308A
Authority: KR
Inventors: 전동구
Original assignee: (주)코원에프아이에스
Priority date: 2010-01-29
Filing date: 2010-01-29
Publication date: 2011-08-04
Also published as: KR101134499B1

Abstract

PURPOSE: A silicon monocrystal ingot forming apparatus comprised of a double guider is provided to suppress vibrations delivered through a wire and minimize a swing effect, thereby minimizing faults in product production by a warped rotation axis from silicon monocrystal ingot growing. CONSTITUTION: A crucible(110) contains a silicon solution. A reaction chamber(100) includes a heater and a heat shield. The heater heats the crucible and is surrounded by the heat shield. The heat shield blocks the heat generated from the heater. A chamber ascending/descending unit(200) is comprised of a support stand, a shaft axis(210), and a driving part and ascends/descends/rotates the reaction chamber in one direction. The shaft axis is connected to the support stand which is supporting the reaction chamber. A wire pulling unit(300) winds and pulls a wire by a motor and rotates the wire in opposite direction to a rotating direction of the reaction chamber. A seed connection chuck in the lower end part of the wire is installed in the upper part of the reaction chamber. A seed crystal which is raising a monocrystal ingot is connected to the seed connection chuck. A wire maintenance part(400) has a double guider structure which is separated with a fixed interval in up and down following the wire length direction. The wire maintenance part is fixed in the support stand in order to be located between the wire pulling unit and the reaction chamber. A jig hole where the wire is passing through is formed at each center of guider and prevents shaking when pulling or rotating the wire.

Description

Silicon single crystal ingot forming apparatus having a double guider {.}

The present invention relates to a silicon single crystal ingot forming apparatus having a double guider, and more particularly, a wire holding part having a double guider structure between the pulling unit and the reaction chamber to provide vibration generated during the rotation / lift driving of the wire. The present invention relates to a silicon single crystal ingot forming apparatus having a double guider that suppresses and minimizes an imbalance during growth of a silicon single crystal ingot.

In general, a silicon wafer used in semiconductor manufacturing is a polysilicon in a heating furnace (quartz crucible) of a single crystal growth apparatus and melt-heated to form a silicon single crystal ingot in the form of a round bar, which is then plated. It is cut and processed.

This silicon-crystal single crystal ingot is grown by the cz (Chocoralsk) method or the fz (plot zone) method, and about 80% of the silicon substrate is used by the cz method. The cz method is a technique of attaching seed crystals to the axis of a silicon growth device to pull the melt (silicon polycrystal) into a quartz crucible.

In this way, the silicon single crystal ingot is mounted at the end of the connecting shaft connected to the motor and placed in a quartz crucible to grow while pulling / rotating.

Referring to FIG. 1, a conventional silicon single crystal ingot forming apparatus includes a quartz crucible 3 in which a silicon solution S is stored, a heater 4 surrounding the quartz crucible 3 so that the quartz crucible 3 is heated, A reaction chamber having a heat shield 5 made of a hollow shape to surround the heater 4, and a crucible 3, a heater 4, and a heat shield 5 penetrating through a bottom surface thereof when installed therein ( 1) and a wire (W) to which the seed crystal is connected.

In order to manufacture the silicon single crystal ingot (I) using the above-described ingot forming apparatus, first, ultra high purity polycrystalline silicon and boron are charged into a quartz crucible 3 and then heated by a heater 4. To melt.

The heater 4 melts a high-purity polycrystalline silicon mass loaded in the crucible 3 into a silicon solution S, and the heat shield 5 surrounding the heater 4 is heat dissipated from the heater 4. It is prevented from diffusing to the outer wall side of the reaction chamber 1 to improve the thermal efficiency.

Subsequently, after soaking the seed crystal connected to the wire (W) in the dissolved silicon solution (S), the silicon single crystal ingot (I) is grown by slowly pulling up while rotating.

A wire pulling unit (not shown) is formed on the upper portion of the reaction chamber 1 to wind and pull the wire W. The silicon solution in the quartz crucible 3 is disposed below the wire W. A seed crystal for growing the single crystal ingot I while contacting and pulling up (S) is provided.

The wire pulling unit winds up the wire W and grows at the same time as the single crystal ingot I grows.

The crucible 3 is fixedly installed on the shaft shaft 2, and the shaft shaft 2 is rotated and raised by a chamber lifting unit (not shown) provided at a lower portion of the reaction chamber 1.

At this time, the silicon single crystal ingot (I) is rotated in a direction opposite to the rotation direction of the crucible (3) around the same axis as the shaft axis (2) of the crucible (3), the high- The liquid interface is raised to maintain the same height.

However, the conventional ingot forming apparatus grows the silicon single crystal ingot while rotating and raising the wire holding the silicon single crystal ingot through the wire pulling unit, the length of the wire being long, and the lower end due to the weight of the silicon single crystal ingot. As it descends, vibrations are easily transmitted as the lift and rotate drive.

Accordingly, vibration is transmitted to the silicon single crystal ingot connected to the wire, and swinging occurs during the growth of the single crystal ingot due to the reverse rotation of the quartz crucible, which causes instability of the silicon melt, which inevitably increases the defect rate of the product. There was this.

Therefore, there is a need for an apparatus capable of minimizing product imbalance by preventing axial balance shaking of the wire during growth of such silicon single crystal ingot.

The present invention is to solve the above-described problems, the wire having a double guider structure in order to minimize the vibration or swing that is transmitted through the wire when pulling and rotating the wire to grow a silicon single crystal ingot An object of the present invention is to provide a silicon single crystal ingot forming apparatus having a double guider having a holding portion, which can fundamentally prevent the wire from being separated from the rotation center.

The apparatus of the present invention for achieving the above object comprises a crucible containing a silicon solution, a heater for heating the crucible, and the heater in the apparatus for producing a silicon single crystal ingot which is a base material of a silicon wafer. A reaction chamber having a heat shield installed therein to block heat dissipated; A chamber raising and lowering unit consisting of a support for supporting the reaction chamber, a shaft shaft connected to the reaction chamber, and a driving unit, for rotating, raising and lowering the reaction chamber in one direction; While winding the wire by a motor, the wire is rotated in a direction opposite to the reaction chamber rotation direction, and a lower end of the wire is provided with a seed connecting chuck to which seed crystals for growing single crystal ingots are connected, and an upper portion of the reaction chamber is provided. A wire pulling unit installed in the; And a double guider structure spaced apart from each other by a predetermined distance along the length direction of the wire, and fixedly connected to the support so as to be positioned between the wire pulling unit and the reaction chamber, and wires are inserted through the center of each guider. The jig hole is formed, the wire holding portion to prevent the shaking during the lifting and rotation of the wire; characterized in that it comprises a.

The wire holding part may include a guider housing fixedly connected to the center of the support in a cylindrical shape having a predetermined length through which the wire holding part is formed; And a pair of upper and lower guiders interposed therebetween so as to interpolate to the upper and lower ends of the guider housing, respectively.

In addition, the wire pulling unit is provided on the frame portion fixed to the upper side of the support and the upper bottom of the frame portion is connected to the pulley portion and one side end of the pulley portion for winding the wire by the motor is pulled up Characterized in that it further comprises a seed rotating portion for rotating the wire in a direction opposite to the reaction chamber rotation direction.

The present invention includes a wire holding unit having a double structure provided with guiders on the upper and lower ends of the guider housing when the wire is pulled and rotated to grow the silicon single crystal ingot, thereby suppressing the vibration transmitted through the wire and swinging the wire. By minimizing the swing phenomenon, as the silicon single crystal ingot is grown, the rotation axis is twisted, thereby minimizing defects in product production.

1 is a view schematically showing the configuration of a conventional silicon single crystal ingot forming apparatus in the related art.
2 is a view showing the overall structure of a silicon single crystal ingot forming apparatus having a double guider according to the present invention.
3 is a view showing the shape of the wire holding portion of the present invention.

Hereinafter, the present invention will be described with reference to the accompanying drawings, and in the following description, when it is determined that a detailed description of a related well-known function or configuration may unnecessarily obscure the subject matter of the present invention, The description may be omitted.

2 is a view showing the overall structure of a silicon single crystal ingot forming apparatus having a double guider according to the present invention, Figure 3 is a view showing the shape of the wire holding portion of the present invention.

2 to 3, the silicon single crystal ingot forming apparatus of the present invention includes a reaction chamber 100, a chamber lifting unit 200, a wire pulling unit 300, and a wire holding unit 400. It is made of a structure.

The reaction chamber 100 includes a crucible 110, a heater 120, and a heat shield 130 therein. The crucible 110 formed of quartz is surrounded by a graphite material. The crucible 110 is rotated about the shaft axis 210, and a high-purity polycrystalline silicon lump and boron are inserted therein.

The heater 120 is formed in a hollow cylindrical shape so that the crucible 110 is located around the outer side. The heater 120 heats the crucible 110 to dissolve polycrystalline silicon lumps and boron therein into a silicon solution.

The heat shield 130 is installed to surround the heater 120, to prevent the heat emitted from the heater 120 to diffuse toward the outer wall to improve the thermal efficiency.

The upper portion of the reaction chamber 100 is formed to be discharged while being discharged while the silicon single crystal ingot I grown therein is pulled up. The silicon single crystal ingot I connected to the lower end of the wire W is rotated and lifted by the wire pulling unit 300.

In addition, the reaction chamber 100 is rotated and raised and lowered by the chamber raising and lowering unit 200, the chamber raising and lowering unit 200 is a support 220 forming a frame to support the reaction chamber 100 ) And a shaft shaft 210 connected to the lower rotation center of the reaction chamber 100, and a driving unit 230 driving the reaction chamber 100 to rotate, move up and down along the shaft shaft 210. do.

After immersing the seed crystal connected by a seed connecting chuck (not shown) provided at the lower end of the wire W in the silicon solution in the crucible 110, while rotating the wire W with a wire pulling unit 300. Gradually pulled up, silicon single crystal ingot (I) grows as it is exposed to room temperature.

Wire pulling unit 300 is the frame portion 310 is fixedly installed above the support 220 and the motor 320, the pulley portion 330 and the seed rotating portion 340 provided inside the frame portion 310 It is composed of, is located on the upper side of the reaction chamber (100).

The pulley part 330 is connected to the upper bottom surface of the frame part 310 to serve to wind the wire W by the motor 320, and to pull the upper part of the frame part 310 and the pulley part 330. A seed rotation part 340 is provided at one end of the connection to wind the wire W and rotate the wire W.

At this time, the seed connecting chuck (not shown) to which the seed crystals are connected by the seed rotating unit 340 is rotated in a direction opposite to the rotation direction of the reaction chamber 100, and the high-temperature solution of the silicon solution S and the seed crystals is formed. As the liquid interface is raised to maintain the same height, the silicon single crystal ingot I is grown.

The wire holding part 400 includes a guider housing 410 and upper and lower guiders 420 and 430, and is positioned at the center of the support 220 so as to be positioned between the wire pulling unit 300 and the reaction chamber 100. It is fixedly connected to penetrate vertically.

The guider housing 410 is formed through the inside of the cylindrical shape having a predetermined length up and down, the wire (W) is passed through the inside.

Upper and lower guiders 420 and 430 are interpolated at upper and lower ends of the guider housing 410, respectively, and the pair of upper and lower guiders 420 and 430 are fixed to each other corresponding to the length of the guider housing 410. It forms a double guider structure spaced apart.

At the center of each of the upper and lower guiders 420 and 430, a jig hole H through which the wire W is vertically inserted is formed to surround the wire W. As shown in FIG.

Accordingly, the wire (W) passes through the wire holding unit 400 in a state of being integrally inserted into the pair of jig holes (H), the wire (W) by the wire pulling unit 300 The wire W has a function of preventing shaking during pulling and rotation driving so as not to deviate from the rotational central axis.

As such, although the invention has been described by way of limited embodiments and drawings, the invention is not limited thereto and is within the scope of equivalents of ordinary skill and the claims to be described below in the technical field to which the invention pertains. Various modifications and variations are possible, of course.

100: reaction chamber 110: crucible
120: heater 130: heat shield
200: chamber lifting unit 210: shaft shaft
220: support 230: drive unit
300: wire pulling unit 310: frame portion
320: motor 330: pulley
340: seed rotating unit 400: wire holding unit
410: guider housing 420,430: upper, lower guider
I: Ingot W: Wire

Claims

In the apparatus for manufacturing a silicon single crystal ingot that is the base material of a silicon wafer,
A reaction chamber having a crucible containing a silicon solution, a heater for heating the crucible, and a heat shield installed inside the heater to block heat emitted therefrom;
A chamber raising and lowering unit consisting of a support for supporting the reaction chamber, a shaft shaft connected to the reaction chamber, and a driving unit, for rotating, raising and lowering the reaction chamber in one direction;
While winding the wire by a motor, the wire is rotated in a direction opposite to the reaction chamber rotation direction, and a lower end of the wire is provided with a seed connecting chuck to which seed crystals for growing single crystal ingots are connected, and an upper portion of the reaction chamber is provided. A wire pulling unit installed in the; And
A double guider structure is spaced up and down a predetermined distance along the length direction of the wire, and is fixedly connected to the support so as to be located between the wire pulling unit and the reaction chamber, the wire is inserted through the center of each guider Jig hole is formed, the silicon single crystal ingot forming apparatus having a double guide, characterized in that it comprises a; wire holding portion to prevent shaking during the lifting and rotation of the wire.

The method of claim 1,
The wire holding unit,
A guider housing having a cylindrical shape having a predetermined length through which the inside is penetrated and fixedly connected to a center of the support vertically; And
And a pair of upper and lower guiders to be interpolated to the upper and lower ends of the guider housing, respectively.

The method of claim 1,
The wire pulling unit,
The reaction chamber rotation direction is provided in the frame portion fixed to the upper side of the support and the upper surface of the upper portion of the frame portion and the pulley for winding the wire by the motor and the wire connected to one end of the pulley to pull up the wire. Silicon single crystal ingot forming apparatus having a double guider, characterized in that further comprises a seed rotating unit for rotating in the opposite direction of.