WO2020108386A1 - 射频放大模块及通信终端 - Google Patents

射频放大模块及通信终端 Download PDF

Info

Publication number
WO2020108386A1
WO2020108386A1 PCT/CN2019/120070 CN2019120070W WO2020108386A1 WO 2020108386 A1 WO2020108386 A1 WO 2020108386A1 CN 2019120070 W CN2019120070 W CN 2019120070W WO 2020108386 A1 WO2020108386 A1 WO 2020108386A1
Authority
WO
WIPO (PCT)
Prior art keywords
balun
radio frequency
amplifier
electrically connected
input
Prior art date
Application number
PCT/CN2019/120070
Other languages
English (en)
French (fr)
Inventor
倪建兴
Original Assignee
锐石创芯（深圳）科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 锐石创芯（深圳）科技有限公司 filed Critical 锐石创芯（深圳）科技有限公司
Publication of WO2020108386A1 publication Critical patent/WO2020108386A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3081—Duplicated single-ended push-pull arrangements, i.e. bridge circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Definitions

  • the embodiments of the present invention relate to the field of electronic technology, and in particular, to a radio frequency amplification module and a communication terminal.
  • RF power amplifiers are widely used to amplify RF signals to achieve the required power level for wireless propagation of antennas.
  • the RF power amplifier has been continuously optimized. Especially with the gradual adoption of all-round frequency, the antenna's demand for the output power of the RF power amplifier is getting higher and higher, and further demands are placed on the design of the RF power amplifier.
  • RF power amplifiers can be divided into single-ended amplifiers and push-pull amplifiers according to the structure of the output stage amplifier circuit.
  • the RF power amplifier used in mobile phones is a single-ended amplifier.
  • the output matching circuit is implemented on the substrate. It is generally composed of a capacitive inductance and the winding inductance of the substrate.
  • the single-ended amplifier based on the 4-layer substrate has a small area, a simple structure, is easier to implement, and has a lower cost.
  • the single-ended amplifier's RF power is not high, the efficiency is not high. Poor. Therefore, in order to improve the performance of wireless communication products, the industry usually considers the application of push-pull amplifiers.
  • the output stage of a push-pull amplifier generally has two amplifier devices. When one channel is working, the current of the channel increases, and the other channel decreases accordingly. Therefore, the states of the two channels are switched in turn, as if one channel is pushing and the other channel is pulling. , And completed the current output task together.
  • the output stage of the push-pull amplifier is realized by two power amplifiers.
  • the differential form of the phase is realized by an input balun on the input of the output stage, and the signal is combined through the balun at the output of the output stage.
  • push-pull amplifiers Compared with single-ended amplifiers, push-pull amplifiers have high linear power and high efficiency, but because the output balun is realized by winding on the substrate, and because the ratio of the balun master coil and the slave coil is generally above 2:1 , Push-pull amplifiers have higher requirements for the number of substrate layers, generally 6-layer substrate. At the same time, the input balun of the output stage is integrated on the chip, which results in a larger chip area of the push-pull amplifier, which also leads to excessive cost and cannot be widely used in wireless communication products.
  • the purpose of the embodiments of the present invention is to provide a radio frequency amplification module and a communication terminal, so as to reduce the chip area of the radio frequency amplification module and reduce the product cost.
  • a radio frequency amplification module including: an input balun, an output balun, and a power amplifier module;
  • the input balun and the output balun are implemented by an integrated passive device process
  • the power amplifier module is disposed on the substrate, and the input balun is electrically connected to the output balun through the power amplifier module.
  • Embodiments of the present invention also provide a communication terminal, including:
  • the RF amplification module as described above.
  • the embodiments of the present invention because the input balun and the output balun in the RF amplifier module are implemented by an integrated passive device process, and the integrated passive device process has a more elaborate processing process, and the input balun The area of the output balun is very small, which ultimately reduces the area of the RF amplifier module, and the processing cost of the integrated passive device process is low, and the cost of the RF amplifier module is also reduced.
  • the power amplifier module includes a first amplifier and a second amplifier. Both ends of the main coil of the input balun are electrically connected to the input end of the first amplifier and the input end of the second amplifier, respectively. The output terminal of the first amplifier and the output terminal of the second amplifier are respectively electrically connected to both ends of the main coil of the output balun.
  • the radio frequency amplifying module further includes a first signal input terminal
  • the power amplifier module further includes a third amplifier
  • the first signal input terminal is electrically connected to one end of a slave coil of the input balun
  • the input bar The other end of the Lun slave coil is electrically connected to the third amplifier.
  • the RF amplification module further includes a first capacitor, one end of the first capacitor is electrically connected to the first signal input terminal, and the other end of the first capacitor is grounded.
  • the RF amplification module further includes a first signal output terminal and the second signal output terminal, and the two ends of the slave coil of the output balun are respectively output with the first signal output terminal and the second signal ⁇ End electrical connection.
  • the RF amplification module further includes a second capacitor, one end of the second capacitor is electrically connected to the first signal output terminal, and the other end of the second capacitor is grounded.
  • the radio frequency amplification module further includes a radio frequency switch chip, and the radio frequency switch chip is electrically connected to the second signal output terminal.
  • the radio frequency amplification module further includes a second signal input terminal, and the second signal input terminal is electrically connected to the center tap of the main coil of the output balun.
  • the RF amplification module further includes a third capacitor, one end of the third capacitor is electrically connected to the second signal input terminal, and the other end of the third capacitor is grounded.
  • FIG. 1 is a schematic structural diagram of a radio frequency amplification module according to Embodiment 1 of the present invention. ;
  • FIG. 2 is a schematic structural diagram of a radio frequency amplification module according to Embodiment 2 of the present invention.
  • the first embodiment of the present invention relates to a radio frequency amplifying module.
  • the radio frequency amplifying module includes an integrated balun module 1 and a power amplifier module 2.
  • the integrated balun module 1 is implemented by an integrated passive device process, and the integrated balun
  • the module includes input balun 11 and output balun 12.
  • the power amplifier module 2 is disposed on the substrate, and the input balun 11 is electrically connected to the output balun 12 through the power amplifier module 2.
  • the input balun 11 and the output balun 12 may be set on the same passive module according to actual needs, or may be set on different passive modules respectively, which is not limited herein.
  • the balun is a broadband RF transmission line transformer that realizes the connection between the balanced transmission line circuit and the unbalanced transmission line circuit by converting the matched input to the differential output.
  • the function of the balun is to make the system have different impedances or compatible with differential/single-ended signaling, and is used in modern communication systems such as mobile phones and data transmission networks.
  • the radio frequency amplifying module realizes the phase differential form through an input balun in the input part, and combines the signals through an output balun in the output part.
  • the input balun and the output balun in the RF amplifier module are realized by winding the substrate, and since the ratio of the balun generally needs to be more than 2:1, the number of layers of the substrate is required Higher, the number of substrate layers occupied by the input balun and the output balun reaches 3 layers.
  • integrated passive device In electronic products, integrated passive device (Integrated Passive Device, IPD) process technology can integrate passive devices into the substrate to form a functionalized substrate. And 30% to 50% of the solder joints on the PCB (printed circuit board) using the substrate are passive devices, which not only occupy the area, but also reduce the reliability of the system. IPD can replace surface-mount discrete components on the substrate, reduce the area occupied by discrete components, simplify surface-mounting steps, improve integration, and avoid parasitic effects caused by surface welding in the RF section.
  • IPD Integrated Passive Device
  • the integrated balun module 1 uses the low temperature co-fired ceramic (Low-Temperature Co-fired Ceramic LTCC) process technology.
  • the low-temperature co-fired ceramic (LTCC) is a typical thick film IPD technology, which is widely used in civil communications and military electronics
  • the technology has become the mainstream technology of passive integration, the development direction of the passive component field and the economic growth point of the new component industry.
  • the substrate of the RF amplification module of this embodiment can be It is greatly simplified, and the number of layers of the substrate can be reduced by at least 3 layers previously occupied by the balun. Therefore, compared with the traditional push-pull power amplifier module design, the chip area of the packaged RF amplifier module will be greatly reduced by about 30%.
  • the RF amplifier module of this embodiment integrates the input balun 11 and the output balun 12 into an integrated balun module of a separate LTCC. Due to the cost of LTCC It is lower and the processing technology is more refined, so the area of the integrated balun module can be made very small, which reduces the area of the RF amplifier module and also reduces the cost of the RF amplifier module.
  • the second embodiment of the present invention relates to a radio frequency amplification module.
  • the second embodiment is substantially the same as the first embodiment, and the main difference is that, as shown in FIG. 2, the RF amplifier module further includes an RF switch chip 3, and a first signal input terminal 13, a second signal input terminal 14, and a second A signal output terminal 15 and a second signal output terminal 16, a first capacitor 17, a second capacitor 18, and a third capacitor 19.
  • the power amplifier module 2 includes a first amplifier 21, a second amplifier 22, and a third amplifier 23, and both ends of the main coil 11b of the input balun 11 are respectively connected to the input end of the first amplifier 21 and the input of the second amplifier 22
  • the terminals are electrically connected, and the output terminal of the first amplifier 21 and the output terminal of the second amplifier 22 are electrically connected to both ends of the main coil 12b of the output balun 12, respectively.
  • the first signal input terminal 13 is electrically connected to one end of the slave coil 11a of the input balun 11, and the first signal input terminal 13 is used to access a first external voltage signal to supply power to the input balun 11.
  • the other end of the slave coil 11 a of the input balun 11 is electrically connected to the third amplifier 23.
  • Both ends of the slave coil 12a of the output balun 12 are electrically connected to the first signal output terminal 15 and the second signal output terminal 16, respectively.
  • One end of the first capacitor 17 is electrically connected to the first signal input terminal 13, and the other end of the first capacitor 17 is grounded.
  • One end of the second capacitor 18 is electrically connected to the first signal output terminal 15, and the other end of the second capacitor 18 is grounded.
  • One end of the third capacitor 19 is electrically connected to the second signal input terminal 14, and the other end of the third capacitor 19 is grounded.
  • the radio frequency switch chip 3 is electrically connected to the second signal output terminal 16.
  • the second signal input terminal 14 is electrically connected to the center tap of the main coil 12a of the output balun 12.
  • the second signal input terminal 14 is used to input a second external voltage signal to supply the output balun 12.
  • the RF amplifier module Since the most complex part of the RF amplifier module is also the input balun and output balun that require more layers of substrates are realized by integrating passive devices and integrated passive device processes, compared with the traditional 6-layer substrate structure, this implementation
  • the substrate of the RF amplification module of the example can be greatly simplified, and the number of substrate layers can be reduced by at least 3 layers previously occupied by the balun to reduce the number of substrate layers of the RF amplification module from the original 6 layers to less than 4.
  • the chip area of the packaged RF amplifier module is also greatly reduced, the reduction area is about 30% or more.
  • a third embodiment of the present invention relates to a communication terminal.
  • the communication terminal includes the radio frequency amplification module in the second embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

本发明实施例涉及电子技术领域，公开了一种射频放大模块及通信终端。本发明中，射频放大模块包括：输入巴伦、输出巴伦和功放模块；所述输入巴伦和所述输出巴伦采用集成无源器件工艺实现；所述功放模块设置于基板上，所述输入巴伦通过所述功放模块与所述输出巴伦电连接。本发明的输入巴伦和输出巴伦采用集成无源器件工艺实现，使得射频放大模块的成本降低，而且集成无源器件工艺的加工工艺更加精细，可将集成巴伦模块的面积做的非常小，最终使得射频放大模块的面积减小。

Description

射频放大模块及通信终端 技术领域
本发明实施例涉及电子技术领域，特别涉及一种射频放大模块及通信终端。
背景技术
在无线通信中，射频功放被广泛用于放大射频信号达到所需求的功率等级，以用于天线的无线传播。射频功放作为核心器件，业界一直不断地努力优化。尤其是随着全面频的逐渐采用，天线对射频功放的输出功率的需求越来越高，对射频功放的设计提出了进一步的需求。
射频功放按照其输出级放大电路的架构可以分为单端放大器和推挽放大器。在传统的无线通信产品中，如手机中采用的射频功放大都是单端放大器，输出匹配电路实现于基板上，一般由电容电感和基板的绕线电感组成，单端放大器的基板大都采用4层的基板，基于4层基板的单端放大器的面积较小，结构简单，较容易实现，而且成本较低，但因为单端放大器的射频功率不高，效率不高，在极限情况下，散热会较差。因此，为提高无线通信产品的性能，业界通常考虑应用推挽放大器。
推挽放大器的输出级一般有两路放大器件，当一路工作时候，该路的电流增加，另一路相应地减小；因此两路的状态在轮流转换，好像是一路在推，另一路在拉，共同完成了电流的输出任务。推挽放大器的输出级由两路功放实现。在输出级的输入上通过一个输入的巴伦实现相位的差分形式，在输出级的输出端又通过巴伦进行信号的合路。与单端放大器相比，推挽放大器具有高线性功率和高效率，但由于输出巴伦通过在基板绕线的方式实现，并且由于巴伦主线圈和从线圈的比例一般要达到2:1以上，推挽放大器对基板的层数要求较高，一般为6层基板。同时输出级的输入巴伦集成于芯片上，导致推挽放大器的芯片面积较大，也导致了成本过高，在无线通信产品中不能得到广泛的应用。
发明内容
本发明实施方式的目的在于提供一种射频放大模块及通信终端，以减小射频放大模块的芯片面积，降低产品成本。
为解决上述技术问题，本发明的实施方式提供了一种射频放大模块，包括：输入巴伦、输出巴伦和功放模块；
所述输入巴伦和所述输出巴伦采用集成无源器件工艺实现；
所述功放模块设置于基板上，所述输入巴伦通过所述功放模块与所述输出巴伦电连接。
本发明的实施方式还提供了一种通信终端，包括：
如上所述的射频放大模块。
本发明实施方式相对于现有技术而言，因为射频放大模块中的输入巴伦和输出巴伦采用集成无源器件工艺实现，而集成无源器件工艺的加工工艺更加精细，可将输入巴伦和输出巴伦的面积做的非常小，最终使得射频放大模块的面积减小，并且集成无源器件工艺的加工工艺的加工成本低，也使得射频放大模块的成本降低。
另外，所述功放模块包括第一放大器、第二放大器，所述输入巴伦的主线圈的两端分别与所述第一放大器的输入端和所述第二放大器的输入端电连接，所述第一放大器的输出端和所述第二放大器的输出端分别与所述输出巴伦的主线圈的两端电连接。
另外，所述射频放大模块还包括第一信号输入端，所述功放模块还包括第三放大器，所述第一信号输入端与所述输入巴伦的从线圈的一端电连接，所述输入巴伦的从线圈的另一端与所述第三放大器电连接。
另外，所述射频放大模块还包括第一电容，所述第一电容的一端与所述第一信号输入端电连接，所述第一电容的另一端接地。
另外，所述射频放大模块还包括第一信号输出端和所述第二信号输出端，所述输出巴伦的从线圈的两端分别与所述第一信号输出端和所述第二信号输出端电连接。
另外，所述射频放大模块还包括第二电容，所述第二电容的一端与所述第一信号输出端电连接，所述第二电容的另一端接地。
另外，所述射频放大模块还包括射频开关芯片，所述射频开关芯片与所述第二信号输出端电连接。
另外，所述射频放大模块还包括第二信号输入端，所述第二信号输入端与所述输出巴伦的主线圈的中心抽头电连接。
另外，所述射频放大模块还包括第三电容，所述第三电容的一端与所述第二信号输入端电连接，所述第三电容的另一端接地。
附图说明
一个或多个实施例通过与之对应的附图中的图片进行示例性说明，这些示例性说明并不构成对实施例的限定，附图中具有相同参考数字标号的元件表示为类似的元件，除非有特别申明，附图中的图不构成比例限制。
图1为本发明的实施例1的射频放大模块的结构示意图。；
图2是本发明的实施例2的射频放大模块的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合附图对本发明的各实施方式进行详细的阐述。然而，本领域的普通技术人员可以理解，在本发明各实施方式中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施方式的种种变化和修改，也可以实现本申请所要求保护的技术方案。以下各个实施例的划分是为了描述方便，不应对本发明的具体实现方式构成任何限定，各个实施例在不矛盾的前提下可以相互结合相互引用。
本发明的第一实施方式涉及一种射频放大模块，如图1所示，射频放大模块包括集成巴伦模块1和功放模块2，集成巴伦模块1采用集成无源器件工艺实现，集成巴伦模块包括输入巴伦11和输出巴伦12。功放模块2设置于基板上，输入巴伦11通过功放模块2与输出巴伦12电连接。在实际应用中，可根据实际需求，将输入巴伦11和输出巴伦12设置于同一个无源模块上，也可以分别设置于不同的无源模块上，在此不作限定。
巴伦是一种通过将匹配输入转换为差分输出而实现平衡传输线电路与不平衡传输线电路之间的连接的宽带射频传输线变压器。巴伦的功能在于使系统具有不同阻抗或与差分/单端信令兼容，并且用于手机和数据传输网络等现代通信系统。
射频放大模块在输入部分通过一个输入的巴伦实现相位的差分形式，在输出部分又通过一个输出的巴伦进行信号的合路。现有技术中，射频放大模块中的输入的巴伦和输出的巴伦都通过在基板绕线的方式实现，并且由于巴伦的比例一般要达到2:1以上，因此对基板的层数要求较高，输入的巴伦和输出的巴伦占用的基板的层数就达到3层。
电子产品中，集成无源器件(Integrated Passive Device，IPD)工艺技术可以将无源器件集成到衬底内部，形成功能化衬底。而采用基板的PCB(印制电路板)上30％～50％的焊点属于无源器件，不仅占用面积，还降低了系统的可靠性。IPD可替代衬底上表贴分立元件，减小分立元件占用的面积、简化表贴步骤、提高集成度，并避免表面焊接在射频段带来的寄生效应。
目前可用的IPD技术分为厚膜技术与薄膜技术。本实施例中，集成巴伦模块1采用低温共烧陶瓷(Low Temperature Co-fired Ceramic LTCC)工艺技术，低温共烧陶瓷(LTCC)是典型的厚膜IPD技术，广泛运用在民用通信、军用电子中，该技术已经成为无源集成的主流技术，成为无源元件领域的发展方向和新的元件产业的经济增长点。
把射频放大模块中最复杂部分也是最需要更多层基板的输入巴伦和输出巴伦采用集成无源器件工艺实现，因此与传统的基板结构相比，本实施例的射频放大模块的基板可 以大大简化，基板的层数可至少减少之前巴伦占用的3层。因此，与传统的推挽式的功率放大模块设计相比，封装射频放大模块做成的芯片面积会大大缩小，缩小面积约为30％以上。
本实施方式的射频放大模块与业界已有的推挽式的功率放大模块相比，本实施例将输入巴伦11和输出巴伦12集成到单独LTCC的集成巴伦模块中，由于LTCC的成本较低，并且加工工艺更加精细，所以可以将集成巴伦模块的面积做得非常小，使得射频放大模块的面积减小，也使得射频放大模块的成本得以降低。
本发明的第二实施方式涉及一种射频放大模块。第二实施方式与第一实施方式大致相同，主要区别之处在于：如图2所示，射频放大模块还包括射频开关芯片3，以及第一信号输入端13、第二信号输入端14、第一信号输出端15和第二信号输出端16、第一电容17、第二电容18、第三电容19。
更具体地，功放模块2包括第一放大器21、第二放大器22和第三放大器23，输入巴伦11的主线圈11b的两端分别与第一放大器21的输入端和第二放大器22的输入端电连接，第一放大器21的输出端和第二放大器22的输出端分别与输出巴伦12的主线圈12b的两端电连接。
第一信号输入端13与输入巴伦11的从线圈11a的一端电连接，第一信号输入端13用于接入第一外部电压信号，为输入巴伦11供电。输入巴伦11的从线圈11a的另一端与第三放大器23电连接。输出巴伦12的从线圈12a的两端分别与第一信号输出端15和第二信号输出端16电连接。
第一电容17的一端与第一信号输入端13电连接，第一电容17的另一端接地。第二电容18的一端与第一信号输出端15电连接，第二电容18的另一端接地。第三电容19的一端与第二信号输入端14电连接，第三电容19的另一端接地。
射频开关芯片3与第二信号输出端16电连接。
第二信号输入端14与输出巴伦12的主线圈12a的中心抽头电连接。第二信号输入端14用于输入第二外部电压信号为输出巴伦12供电。
由于把射频放大模块中最复杂部分也是最需要更多层基板的输入巴伦和输出巴伦以集成无源器件以集成无源器件工艺实现，因此与传统的6层基板结构相比，本实施例的射频放大模块的基板可以大大简化，基板的层数可至少减少之前巴伦占用的3层以将射频放大模块的基板的层数由原来的6层降低至4层以下。同时，与传统的推挽式的功率放大模块设计相比，封装射频放大模块做成的芯片面积也大大缩小，缩小面积约为30％以上。
其成本比较见下表所示，从下表内容可以得知，本发明的射频放大模块也大大节省了成本：
Figure PCTCN2019120070-appb-000001
本发明的第三实施方式涉及一种通信终端，通信终端包括第二实施方式中的射频放大模块。
本领域的普通技术人员可以理解，上述各实施方式是实现本发明的具体实施例，而在实际应用中，可以在形式上和细节上对其作各种改变，而不偏离本发明的精神和范围。

Claims (10)

  1. 一种射频放大模块，其特征在于，所述射频放大模块包括：输入巴伦、输出巴伦和功放模块；
    所述输入巴伦和所述输出巴伦采用集成无源器件工艺实现；
    所述功放模块设置于基板上，所述输入巴伦通过所述功放模块与所述输出巴伦电连接。
  2. 根据权利要求1所述的射频放大模块，其特征在于，所述功放模块包括第一放大器、第二放大器，所述输入巴伦的主线圈的两端分别与所述第一放大器的输入端和所述第二放大器的输入端电连接，所述第一放大器的输出端和所述第二放大器的输出端分别与所述输出巴伦的主线圈的两端电连接。
  3. 根据权利要求2所述的射频放大模块，其特征在于，所述射频放大模块还包括第一信号输入端，所述功放模块还包括第三放大器，所述第一信号输入端与所述输入巴伦的从线圈的一端电连接，所述输入巴伦的从线圈的另一端与所述第三放大器电连接。
  4. 根据权利要求3所述的射频放大模块，其特征在于，所述射频放大模块还包括第一电容，所述第一电容的一端与所述第一信号输入端电连接，所述第一电容的另一端接地。
  5. 根据权利要求1所述的射频放大模块，其特征在于，所述射频放大模块还包括第一信号输出端和所述第二信号输出端，所述输出巴伦的从线圈的两端分别与所述第一信号输出端和所述第二信号输出端电连接。
  6. 根据权利要求5所述的射频放大模块，其特征在于，所述射频放大模块还包括第二电容，所述第二电容的一端与所述第一信号输出端电连接，所述第二电容的另一端接地。
  7. 根据权利要求5所述的射频放大模块，其特征在于，所述射频放大模块还包括射频开关芯片，所述射频开关芯片与所述第二信号输出端电连接。
  8. 根据权利要求2所述的射频放大模块，其特征在于，所述射频放大模块还包括第二信号输入端，所述第二信号输入端与所述输出巴伦的主线圈的中心抽头电连接。
  9. 根据权利要求8所述的射频放大模块，其特征在于，所述射频放大模块还包括第三电容，所述第三电容的一端与所述第二信号输入端电连接，所述第三电容的另一端接地。
  10. 一种通信终端，其特征在于，所述通信终端包括根据权利要求1至9中所述的射频放大模块。
PCT/CN2019/120070 2018-11-26 2019-11-22 射频放大模块及通信终端 WO2020108386A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811417162.XA CN109462411A (zh) 2018-11-26 2018-11-26 射频放大模块及通信终端
CN201811417162.X 2018-11-26

Publications (1)

Publication Number Publication Date
WO2020108386A1 true WO2020108386A1 (zh) 2020-06-04

Family

ID=65611661

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/120070 WO2020108386A1 (zh) 2018-11-26 2019-11-22 射频放大模块及通信终端

Country Status (2)

Country Link
CN (1) CN109462411A (zh)
WO (1) WO2020108386A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109462411A (zh) * 2018-11-26 2019-03-12 锐石创芯（深圳）科技有限公司 射频放大模块及通信终端
CN113572433B (zh) * 2020-10-30 2023-10-13 锐石创芯(深圳)科技股份有限公司 射频差分放大电路和射频模组
CN112968679B (zh) * 2021-02-08 2023-09-19 锐石创芯(深圳)科技股份有限公司 推挽功率放大系统及射频前段模组
CN115913141A (zh) * 2021-09-30 2023-04-04 锐磐微电子科技(上海)有限公司 射频推挽功率放大器、电路及射频前端模组
CN115913139A (zh) * 2021-09-30 2023-04-04 锐磐微电子科技(上海)有限公司 推挽式射频功率放大电路及推挽式射频功率放大器
CN216390918U (zh) * 2021-11-05 2022-04-26 深圳飞骧科技股份有限公司 一种hbt高效率射频功率放大器
CN114172468A (zh) * 2021-11-24 2022-03-11 深圳飞骧科技股份有限公司 射频功率放大器及短报文通信系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050032481A1 (en) * 2003-08-05 2005-02-10 Cheng-Yen Shih Front end module for wireless network system
CN106603022A (zh) * 2016-11-10 2017-04-26 电子科技大学 一种短波高线性平衡结构功率放大器
CN108270407A (zh) * 2016-12-30 2018-07-10 通用电气公司 一种平面巴伦及一种多层电路板
CN109462411A (zh) * 2018-11-26 2019-03-12 锐石创芯（深圳）科技有限公司 射频放大模块及通信终端
CN209088930U (zh) * 2018-11-26 2019-07-09 锐石创芯（深圳）科技有限公司 射频放大模块及通信终端

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2586125A4 (en) * 2010-06-22 2014-06-18 Hittite Microwave Corp IMPROVED DOUBLE BALANCED MIXER
CN104101427B (zh) * 2013-04-15 2016-05-18 袁博 立体封装太赫兹辐射探测器
CN105591660A (zh) * 2014-10-23 2016-05-18 展讯通信（上海）有限公司 射频收发机及移动终端
CN106330128A (zh) * 2015-06-30 2017-01-11 展讯通信（上海）有限公司 实现宽带巴伦的集成电路
CN107046408B (zh) * 2017-04-14 2020-09-18 上海华虹宏力半导体制造有限公司 一种低成本射频差分放大器
CN107093988A (zh) * 2017-04-17 2017-08-25 武汉大学 一种7模式增益和输出功率可控的k波段功率放大器
CN107453731A (zh) * 2017-08-16 2017-12-08 湖南时变通讯科技有限公司 一种射频功率合成装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050032481A1 (en) * 2003-08-05 2005-02-10 Cheng-Yen Shih Front end module for wireless network system
CN106603022A (zh) * 2016-11-10 2017-04-26 电子科技大学 一种短波高线性平衡结构功率放大器
CN108270407A (zh) * 2016-12-30 2018-07-10 通用电气公司 一种平面巴伦及一种多层电路板
CN109462411A (zh) * 2018-11-26 2019-03-12 锐石创芯（深圳）科技有限公司 射频放大模块及通信终端
CN209088930U (zh) * 2018-11-26 2019-07-09 锐石创芯（深圳）科技有限公司 射频放大模块及通信终端

Also Published As

Publication number Publication date
CN109462411A (zh) 2019-03-12

Similar Documents

Publication Publication Date Title
WO2020108386A1 (zh) 射频放大模块及通信终端
US8049589B2 (en) Balun circuit manufactured by integrate passive device process
US10348265B2 (en) Transformer-type phase shifter, phase-shift circuit, and communication terminal apparatus
CN109845029B (zh) 定向耦合器内置基板、高频前端电路以及通信装置
KR20180044330A (ko) 분파 장치 및 그 설계 방법
US11870401B2 (en) Power amplifier module, frontend circuit, and communication device
EP2188890A2 (en) Broadband power amplifier
CN104426489A (zh) 功率放大器
US11757476B2 (en) Radio frequency module and communication device
WO2018225590A1 (ja) 高周波モジュール
US11128266B1 (en) Amplifiers with feedback circuits
US10199709B2 (en) Microwave power combiner
CN115913128B (zh) 多尔蒂功率放大器、射频芯片及电子设备
CN218124668U (zh) 射频前端模组
US9362883B2 (en) Passive radio frequency signal handler
JP2006528854A (ja) 小型インピーダンス変換回路
CN209088930U (zh) 射频放大模块及通信终端
US8766727B2 (en) Power amplification circuit
CN116566329A (zh) 巴伦、射频前端芯片和射频前端模组
WO2011127777A1 (zh) 射频功率放大器模块及移动通信终端
US7389090B1 (en) Diplexer circuit for wireless communication devices
KR20130033159A (ko) 전력 결합기를 이용한 씨모스 전력 증폭기
CN111628733B (zh) 高频前端电路
CN219514051U (zh) 匹配电路和射频前端模组
US20240014841A1 (en) Radio-frequency module and communication device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19890393

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 02.11.2021)

122 Ep: pct application non-entry in european phase

Ref document number: 19890393

Country of ref document: EP

Kind code of ref document: A1