WO2020103801A1 - Dispositif d'affichage électroluminescent organique et son procédé de fabrication - Google Patents

Dispositif d'affichage électroluminescent organique et son procédé de fabrication

Info

Publication number
WO2020103801A1
WO2020103801A1 PCT/CN2019/119228 CN2019119228W WO2020103801A1 WO 2020103801 A1 WO2020103801 A1 WO 2020103801A1 CN 2019119228 W CN2019119228 W CN 2019119228W WO 2020103801 A1 WO2020103801 A1 WO 2020103801A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
organic light
pixel
sub
electrode
Prior art date
Application number
PCT/CN2019/119228
Other languages
English (en)
Chinese (zh)
Inventor
陈鼎国
徐湘伦
Original Assignee
陈鼎国
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 陈鼎国 filed Critical 陈鼎国
Priority to US17/309,277 priority Critical patent/US20220020830A1/en
Priority to CN201980075403.3A priority patent/CN113169217A/zh
Publication of WO2020103801A1 publication Critical patent/WO2020103801A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of display technology, and in particular, to a method for manufacturing an organic light-emitting device and an organic light-emitting display manufactured by the method.
  • AMOLED Active Matrix Organic Light Emitting Diode Display
  • LCD Active Matrix Organic Light Emitting Diode Display
  • TFT Thin Film Transistor
  • the organic light-emitting diode can also be integrated on the silicon-based CMOS drive backplane, and the semiconductor display is used to make an ultra-high resolution chip display.
  • organic light-emitting diode displays including active array type Active Matrix OLED (AMOLED) and passive array type Passive Matrix OLED (PMOLED)
  • AMOLED Active Matrix OLED
  • PMOLED Passive Matrix OLED
  • Destruction, traditional device patterning uses vacuum thermal evaporation to deposit small molecule organics onto the substrate through the openings of a metal mask.
  • the vapor deposition coating process uses micro openings of a metal mask or a high-precision metal mask (Fine Metal Mask, FMM) to define the coating area.
  • FMM Fast Metal Mask
  • the thickness of this high-precision metal mask is generally only 20-30um.
  • each micro-opening depends on the resolution of the display. Depends on the rate.
  • the resolution of an AMOLED screen for general smartphone display is about 300 to 600 ppi, and the sub-pixel size is about tens of microns.
  • the accuracy and quality of the mask have a great influence on the performance of OLED components.
  • the precision of the currently used high-precision metal masks (Fine Metal Mask, FMM) has size restrictions, and it is not easy to break through the resolution of more than 800ppi (pixel per inch).
  • the ratio of the light-emitting area (also called the aperture ratio) of the manufactured display is very low, and the current density needs to be increased to achieve the required high brightness, resulting in a problem of low life.
  • the cleaning cycle needs to be replaced, and it is difficult to clean, easily damaged, and has a short service life. High and extremely high production costs.
  • the metal mesh strip made by typesetting to the mask plate frame. In this welding process, the metal mesh strip needs to be stretched to ensure a smooth surface; however, during the stretching process of the metal mesh, it is easy to cause the pixels on the metal sheet to be deformed, which will cause a great deal of patterning in the AMOLED display screen. Large changes, the quality and performance of the resulting display will have a great impact.
  • the manufacturing process of FMM is used to make RGBOLED side-by-side (RGB-Side-By-Side) AMOLED displays below 1000ppi , For products such as smartphones.
  • a metal mask without micro openings Clear Metal Mask, CMM, or Open Mask
  • the structured white light-emitting organic light-emitting device is combined with a red, green, and blue primary color filter (White OLED with Color Filter, WOLED) with sub-pixel design to define an AMOLED display made of sub-pixels.
  • this application aims to solve at least one of the technical problems in the prior art. Therefore, this application proposes a method for manufacturing an ultra-high-resolution organic light-emitting display device with a special yellow light process and device structure without using a high-precision metal mask (FMM) patterning process
  • the method can produce high-resolution organic light-emitting diode displays (AMOLED and PMOLED) and has good display performance.
  • a method for manufacturing an organic light-emitting display device provided by the present invention specifically includes:
  • a first electrode and a pixel definition layer spaced apart are evaporated on the driving substrate to form a plurality of spaced sub-pixel regions on the first electrode;
  • the specific steps of manufacturing the organic light-emitting device in step S2 include:
  • the organic light emitting device film layer includes a red light emitting layer or a green light emitting layer or a blue light emitting layer, an electron transport layer, an electron injection layer and a second electrode;
  • the specific steps of manufacturing the organic light-emitting device in step S2 include:
  • the organic light-emitting device includes one of a red sub-pixel device, a green sub-pixel device, and a blue sub-pixel device.
  • the organic light-emitting device includes hole injection Layer, hole transport layer, red light-emitting layer or green light-emitting layer or blue light-emitting layer, electron transport layer, electron injection layer and second electrode;
  • the specific steps of manufacturing the organic light-emitting device in step S2 include:
  • an organic light-emitting device is vapor-deposited and a second electrode is fabricated in the developed sub-pixel area, and the organic light-emitting device is a white light-emitting device;
  • step S3 the method further includes:
  • a first barrier layer is provided on the third electrode
  • a color filter film is provided on the first barrier layer corresponding to each sub-pixel area
  • the color filter film includes a red filter film, a green filter film, a blue filter film, and a transparent filter film.
  • the white light emitting device includes a vertical stack structure above one organic light emitting unit, each light emitting unit includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, The second electrode is formed on the electron injection layer of the cell.
  • the white light emitting device includes a hole injection layer, a hole transport layer, a first light emitting layer, an electron transport layer, a carrier generation layer, a hole transport layer, a second light emitting layer, an electron transport layer, electron injection Layer and second electrode.
  • the present application also proposes an organic light-emitting display device manufactured by the method for manufacturing an organic light-emitting display device.
  • FIG. 1 is a flow chart of manufacturing a high-resolution red-green-blue-three-color (RGB-Side-By-Side) AMOLED display device according to Embodiment 1 of the present application;
  • 1-2 is a schematic diagram according to step S1002 in Embodiment 1 of the present application.
  • 1-3 are schematic diagrams according to step S1003 in Embodiment 1 of the present application.
  • 1-4 are schematic diagrams according to step S1004 in Embodiment 1 of the present application.
  • FIGS 1-5 are schematic diagrams according to step S1005 in the first embodiment of the present application.
  • FIG. 1-6 is a schematic diagram of the red sub-pixel device evaporated in steps S1006 and S1007 in the first embodiment of the present application;
  • FIGS. 1-7 are schematic diagrams of step S1008 according to Embodiment 1 of the present application.
  • FIGS. 1-8 are schematic diagrams of evaporation of green sub-pixel devices according to repeated steps S1003-S1008 in Embodiment 1 of the present application;
  • FIGS 1-9 are schematic diagrams of the steps S1003-S1008 of vapor-depositing blue sub-pixel devices according to Embodiment 1 of the present application;
  • FIGS. 1-10 are schematic diagrams of step S1009 according to Embodiment 1 of the present application.
  • FIG. 2 is a flowchart of manufacturing a high-resolution RGB-Side-By-Side AMOLED display device according to Embodiment 2 of the present application;
  • FIG. 2-1 is a schematic diagram according to step S2001 in Embodiment 2 of the present application.
  • step S2002 is a schematic diagram according to step S2002 in the second embodiment of the present application.
  • FIG. 2-3 is a schematic diagram according to step S2003 in Embodiment 2 of the present application.
  • 2-4 is a schematic diagram according to step S2004 in the second embodiment of the present application.
  • FIGS. 2-5 are schematic diagrams of the red sub-pixel device evaporated in steps S2005 and S2006 according to the second embodiment of the present application;
  • FIGS 2-6 are schematic diagrams according to step S2007 in Embodiment 2 of the present application.
  • FIGS. 2-7 are schematic diagrams of the evaporation of green sub-pixel devices by repeating steps S2002-S2007 according to Embodiment 2 of the present application;
  • 2-8 are schematic diagrams of the evaporation of blue sub-pixel devices by repeating steps S2002-S2007 in the second embodiment of the present application;
  • FIGS. 2-9 are schematic diagrams according to step S2008 in Embodiment 2 of the present application.
  • FIG. 3 is a flow chart of manufacturing a high-resolution white organic light-emitting diode display device (WOLED plus color filter film) according to Embodiment 3 of the present application;
  • FIG. 3-1 is a schematic diagram of step S3001 according to Embodiment 3 of the present application.
  • step S3002 is a schematic diagram of step S3002 in Embodiment 3 of the present application.
  • step S3003 is a schematic diagram of step S3003 according to Embodiment 3 of the present application.
  • FIG. 3-4 is a schematic diagram according to step S3004 in Embodiment 3 of the present application.
  • Figures 3-5 are schematic diagrams of steps S3005 and S3006 in Embodiment 3 of the present application.
  • 3-6 are schematic diagrams of step S3007 in Embodiment 3 of the present application.
  • step S3008 are schematic diagrams of step S3008 according to Embodiment 3 of the present application.
  • 3-8 are schematic diagrams of the vapor-deposited first barrier film according to Example 3 of the present application.
  • 3-9 are schematic diagrams of manufacturing a color filter film according to Example 3 of the present application.
  • FIGS. 3-10 are schematic diagrams of an evaporated second barrier film according to Example 3 of the present application.
  • FIG. 4 is a schematic structural diagram of a white light-emitting device in step S3005 in Embodiment 3;
  • FIG. 5 is another schematic structural diagram of the white light-emitting device in step S3005 in Embodiment 3.
  • the invention provides a method for manufacturing an organic light-emitting device, including:
  • the active array driving backplane may be glass or Low-temperature polysilicon thin-film transistors (LTPS), flexible semiconductor thin-film transistors (Oxide), or silicon-based complementary field-effect transistors (Si-based Complementary) fabricated directly on silicon wafer , CMOS), the first electrode is a transparent conductive metal oxide layer, such as indium tin oxide, aluminum tin oxide, zinc indium oxide, etc .;
  • the method for manufacturing an organic light-emitting device proposes a special yellow light process and a device structure to produce an ultra-high-resolution organic without using a patterning process of a high-precision metal mask (FMM)
  • FMM high-precision metal mask
  • a manufacturing method of a light-emitting device which can produce a high-resolution organic light-emitting diode display (AMOLED) and has good display performance.
  • this method can produce three (but not limited to) different organic light-emitting devices, including: 1. High-resolution red-green-blue-three-color side-by-side (RGB-Side-By- Side) AMOLED display device; 2. High-resolution red-green-blue-three-color (RGB-Side-By-Side) AMOLED display device; 3. High-resolution white organic light-emitting diode (WOLED) display device.
  • the manufacturing processes of the three organic light-emitting devices are described below.
  • organic light-emitting display devices manufactured in the specific examples given in this embodiment are all active-array organic light-emitting display devices (AMOLEDs) made of an active array driving substrate
  • AMOLEDs active-array organic light-emitting display devices
  • PMOLED passive array type organic light emitting display device
  • this embodiment provides a method for manufacturing a RGB-Side-By-Side OLED display device, including:
  • S1001 Vapor-deposit the first electrodes and the pixel definition layer that are spaced apart on the active array driving substrate to form a plurality of spaced sub-pixel regions on the first electrode;
  • a hole injection layer and a hole transport layer common to all sub-pixel regions are evaporated on the first electrode and the pixel definition layer;
  • the photoresist material of the first photoresist layer may be a conventional photoresist material, such as photoresist, and the photoresist is a photosensitive reaction Polymer material, which can be a negative photoresist that produces photo-polymerization or photo-cross-linking due to light, such as (but not limited to) methyl methacrylate ) Or fluoroalkyl (such as fluoroalkyl) and other photosensitive polymer materials, the bridge reaction occurs due to light; the photoresist can also be a positive photoresist material that decomposes due to light (photo-decomposition), for example: heavy Diazonaphthoquinone (DNQ), etc.
  • the photolithography materials are not limited to the ones listed above; the selection criteria for the solvent used is not to damage the light emitting device layer.
  • the remaining organic light-emitting device film layer is evaporated in the developed sub-pixel area, and the remaining organic light-emitting device includes one of a red sub-pixel device, a green sub-pixel device, and a blue sub-pixel device.
  • the light emitting device film layer includes a red light emitting layer or a green light emitting layer or a blue light emitting layer, an electron transport layer, and an electron injection layer;
  • the first electrode 110 and the pixel defining layer 120 are provided on the active array driving substrate 100 at intervals to form a plurality of intervals on the first electrode Sub-pixel regions; a hole injection layer and a hole transport layer 130 common to all sub-pixel regions are evaporated on the first electrode 110 and the pixel definition layer 120;
  • step S1003 perform step a on the hole injection layer and the hole transport layer 130: coating the first photoresist layer 140 and the second photoresist layer 150;
  • step b is performed on the first photoresist layer 140 and the second photoresist layer 150: exposure with a photomask;
  • step c is performed on the first photoresist layer 140 and the second photoresist layer 150: the exposed first photoresist layer 140 and the second photoresist The adhesive layer 150 is developed and eroded;
  • step d is performed in the developed sub-pixel region: the remaining organic light-emitting devices are vapor-deposited, specifically, the red sub-pixel device 160R is vapor-deposited first, that is, sequentially Vapor deposition of red light-emitting layer, electron transport layer, electron injection layer and second electrode;
  • step S1008 perform step e on the remaining photoresist: peel off the remaining first photoresist layer 140 and second photoresist 150 layer and the unnecessary plating film thereon ;
  • the solvent for stripping is based on the selection criteria that will not cause damage to the light-emitting device.
  • step ae to vaporize the remaining organic light-emitting device in the further developed sub-pixel region, and then to vaporize the green sub-pixel device 160G, that is, to sequentially vaporize the green light-emitting layer in the same sub-pixel, Electron transport layer, electron injection layer, and second electrode; stripping the remaining first photoresist layer 140 and second photoresist layer 150 and unnecessary plating films thereon; the solvent for stripping does not affect the light emitting device Damage is the selection criterion.
  • step ae is further repeated, and the remaining organic light-emitting devices are evaporated in the further developed sub-pixel area, followed by the evaporation of the blue sub-pixel device 160B, that is, the blue is sequentially evaporated in the same sub-pixel Light-emitting layer, electron transport layer, electron injection layer, and second electrode; strip the remaining first photoresist layer 140 and second photoresist 150 layer and unnecessary coatings thereon; the stripping solvent will not Damage to the light emitting device is the selection criterion.
  • the second electrode 160b has been formed on the red sub-pixel device 160R, green sub-pixel device 160G, and blue sub-pixel device 160B, and then step f: Three electrode 170.
  • red-green-blue-three-color (RGB-Side-By-Side) AMOLED display device is formed.
  • this embodiment provides another method for manufacturing a RGB-Side-By-Side OLED display device, including:
  • a first electrode and a pixel definition layer which are arranged at intervals are evaporated on the active array driving substrate to form a plurality of sub-pixel regions arranged at intervals on the first electrode;
  • an organic light-emitting device is vapor-deposited in the developed sub-pixel region, the organic light-emitting device includes one of a red sub-pixel device, a green sub-pixel device, and a blue sub-pixel device, and the organic light-emitting device may include holes Injection layer, hole transport layer, red light-emitting layer or green light-emitting layer or blue light-emitting layer, electron transport layer, electron injection layer;
  • the first electrode 110 and the pixel definition layer 120 spaced apart are vapor-deposited on the active array driving substrate 100 to form a plurality of spaced-apart children on the first electrode Pixel area
  • step S2002 perform step a on the first electrode 110 and the pixel definition layer 120: coating the first photoresist layer 140 and the second photoresist layer 150;
  • step S2003 the first photoresist layer 140 and the second photoresist layer 150 are subjected to step b: exposure with a photomask;
  • step c is performed on the first photoresist layer 140 and the second photoresist layer 150: the exposed first photoresist layer 140 and the second photoresist The adhesive layer 150 is developed and eroded;
  • step d is performed in the developed sub-pixel area: the organic light-emitting device is vapor-deposited, specifically, the red sub-pixel device 190R is vapor-deposited first, that is, the vapor deposition is sequentially performed in the same sub-pixel Hole injection layer, hole transport layer, red light-emitting layer, electron transport layer, electron injection layer and second electrode;
  • step S2006 perform step e on the remaining photoresist: peel off the remaining first photoresist layer 140 and second photoresist layer 150 and the unnecessary plating film thereon ;
  • the solvent for stripping is based on the selection criteria that will not cause damage to the light-emitting device.
  • steps a-e are repeated, and another color organic light-emitting device is vapor-deposited in the further developed sub-pixel area.
  • the green sub-pixel device 190G can be subsequently evaporated, that is, the hole injection layer, the hole transport layer, the green light-emitting layer, the electron transport layer, the electron injection layer, and the second electrode are sequentially deposited in the same sub-pixel;
  • steps a-e are further repeated to vapor-deposit another color organic light-emitting device in the further developed sub-pixel area.
  • the blue sub-pixel device 190B is subsequently evaporated, that is, the hole injection layer, the hole transport layer, the blue light-emitting layer, the electron transport layer, the electron injection layer, and the second electrode are sequentially deposited in the same sub-pixel;
  • step f make a third Electrode 170.
  • Example 1 and Example 2 the design of the device process steps and the overall OLED structure is used to reduce the possible damage of the device surface by the solvent during the process, and the existing photoresist is used to make the organic mask layer
  • the patterned structure enables high reliability, high-performance primary colors of red, green, and blue to be produced without the use of traditional metal masks in the manufacturing process, which makes it possible to produce different light colors, thereby achieving high luminous aperture ratio.
  • This technology is suitable for AMOLED production at all resolutions. Especially the red, green and blue side-by-side (RGB) side-by-side direct-emitting full-color glass-based and flexible AMOLED displays and silicon-based micro AMOLED displays.
  • RGB side-by-side
  • this embodiment provides a method for manufacturing a high-resolution white organic light-emitting diode (WOLED) display device, including:
  • S3001 Vapor-deposit a first electrode and a pixel definition layer spaced apart on an active array driving substrate to form a plurality of spaced-apart sub-pixel regions on the first electrode;
  • an organic light-emitting device is vapor-deposited in the developed sub-pixel area, and the organic light-emitting device is a white organic light-emitting device;
  • S3008 Fabricate a third electrode on the second electrode that has been formed on the organic light-emitting device.
  • the first electrode 110 and the pixel definition layer 120 spaced apart are vapor-deposited on the driving substrate 100 to form a plurality of spaced sub-pixel regions on the first electrode ;
  • step S3002 perform step a on the first electrode 110 and the pixel definition layer 120: coating the first photoresist layer 140 and the second photoresist layer 150;
  • step S3003 step b is performed on the first photoresist layer 140 and the second photoresist layer 150: exposure is performed with a photomask;
  • step c is performed on the first photoresist layer 140 and the second photoresist layer 150: the exposed first photoresist layer 140 and the second photoresist The adhesive layer 150 is developed and eroded;
  • step d is performed in the developed sub-pixel area: the white organic light-emitting device 160W is vapor-deposited, specifically, the white organic light-emitting device 160W is vapor-deposited on all sub-pixels, the white
  • the light-emitting device includes an organic light-emitting unit and a vertical stack structure above.
  • the organic light emitting unit may be formed by stacking one or more than one, for example, 1-4 light emitting unit devices.
  • the white organic light emitting device may adopt the structure shown in FIG. 4 or the structure shown in FIG. 5.
  • the white organic light-emitting device including two light-emitting layers, and the specific structure is that the first electrode on the thin film transistor and the pixel definition layer are made of a hole injection layer and a hole transport layer , The first light-emitting layer, the electron transport layer, the carrier generation layer, the hole transport layer, the second light-emitting layer, the electron transport layer, the electron injection layer, the second electrode; the white organic light-emitting device in FIG.
  • the second electrode 160b is formed on the white organic light emitting device 160W;
  • step e is performed on the remaining photoresist: stripping the remaining first photoresist layer 140 and second photoresist layer 150 and the non-sub-pixel regions Unnecessary plating; the solvent used for stripping is based on selection criteria that does not cause damage to the light-emitting device.
  • step S3008 perform step f on the second electrode 160b that has been made: fabricate a third electrode 170;
  • step g on the third electrode vapor-deposit the first barrier layer 180 on the third electrode
  • step h on the first barrier layer apply a filter film on the first barrier layer 180 corresponding to each sub-pixel area, including a red color filter film 210R, a green color filter The optical film 210G, the blue color filter film 210B, and the transparent color filter film 210W.
  • a filter film on the first barrier layer 180 corresponding to each sub-pixel area, including a red color filter film 210R, a green color filter
  • the optical film 210G, the blue color filter film 210B, and the transparent color filter film 210W Although a combination of red, blue, green, and transparent filters is used in this embodiment, the present invention is not limited to this combination.
  • the specific requirements of the display use different filter film colors to increase or adjust the color saturation;
  • the step i is continued on the color filter film: the second barrier layer 200 is evaporated on the color filter film.
  • Example 3 By optimizing the design of the device process steps and the overall OLED structure, the possible damage to the OLED light-emitting device caused by the solvent during the process is reduced, so that it can improve the life and stability of the device under a specific structure and process to obtain high performance AMOLED display.
  • the traditional yellow process and special photoresist are used to make the patterned structure of the organic light-emitting device, to make the white organic light-emitting device between the individual sub-pixels to form separable sub-pixels, plus red, blue, green colors
  • the film makes it produce a full-color AMOLED display.
  • This separated sub-pixel structure can be avoided.
  • the light-emitting layer is mixed with light leakage caused by the conduction and leakage of the adjacent sub-pixels at high resolution. (Crosstalk) question.
  • the organic thin film mask made by special photoresist and yellow light process is used to make white devices to separate each light-emitting pixel to avoid the possibility of lateral conduction of sub-pixels, effectively reducing device color mixing and greatly improving Device life.
  • the organic light-emitting device and active array-driven organic light-emitting diode display (AMOLED) produced by this application can be used in the production of wearable devices, such as ultra-high-resolution microdisplays, electronic skins, and in-vehicles in VR, MR, AR smart glasses Display and other devices can be used for high-resolution high-end AMOLED displays such as mobile phones, smart phones, e-books, electronic newspapers, televisions, personal portable computers, foldable and rollable flexible OLED and other product applications.
  • wearable devices such as ultra-high-resolution microdisplays, electronic skins, and in-vehicles in VR, MR, AR smart glasses Display and other devices can be used for high-resolution high-end AMOLED displays such as mobile phones, smart phones, e-books, electronic newspapers, televisions, personal portable computers, foldable and rollable flexible OLED and other product applications.
  • first feature and “second feature” may include one or more of the features.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé de fabrication de dispositif d'affichage électroluminescent organique, consistant : S1, à fabriquer sur un substrat de commande (100) une première électrode (110) et une couche de définition de pixel (120), disposée à un intervalle, de telle sorte que de multiples régions de sous-pixel disposées à intervalles soient formées sur la première électrode (110); S2, à fabriquer sur les régions de sous-pixel un dispositif électroluminescent organique, à former une deuxième électrode (160b); S3, à fabriquer sur la deuxième électrode (160b) formée par le dispositif électroluminescent organique une troisième électrode (170). L'invention concerne un procédé de fabrication d'un dispositif électroluminescent organique à ultra haute résolution ne nécessitant pas l'utilisation d'un procédé de formation de motif de masque métallique fin (FMM), et réalisé à l'aide d'un procédé de lumière jaune spécial et d'une structure de dispositif, le procédé étant apte à fabriquer un affichage à diodes électroluminescentes organiques à matrice active à haute résolution (AMOLED) et un affichage à diodes électroluminescentes organiques à matrice passive (PMODEL), et ayant de bonnes performances d'affichage.
PCT/CN2019/119228 2018-11-19 2019-11-18 Dispositif d'affichage électroluminescent organique et son procédé de fabrication WO2020103801A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US17/309,277 US20220020830A1 (en) 2018-11-19 2019-11-18 Patterning of Organic Light Emitting Diode Device and the OLED Displays Manufactured Therefrom
CN201980075403.3A CN113169217A (zh) 2018-11-19 2019-11-18 有机发光显示器件及其制作方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862768983P 2018-11-19 2018-11-19
US201862768987P 2018-11-19 2018-11-19
US62/768,983 2018-11-19
US62/768,987 2018-11-19

Publications (1)

Publication Number Publication Date
WO2020103801A1 true WO2020103801A1 (fr) 2020-05-28

Family

ID=70773250

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/119228 WO2020103801A1 (fr) 2018-11-19 2019-11-18 Dispositif d'affichage électroluminescent organique et son procédé de fabrication

Country Status (3)

Country Link
US (1) US20220020830A1 (fr)
CN (1) CN113169217A (fr)
WO (1) WO2020103801A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728419A (zh) * 2008-10-17 2010-06-09 三星移动显示器株式会社 有机发光显示器
CN101740607A (zh) * 2008-11-10 2010-06-16 三星移动显示器株式会社 有机发光显示器件及其制造方法
CN106784354A (zh) * 2016-12-29 2017-05-31 上海天马有机发光显示技术有限公司 有机发光显示器件及其制造方法、以及有机发光显示装置
US20180190907A1 (en) * 2017-01-03 2018-07-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same
CN108573996A (zh) * 2017-03-13 2018-09-25 三星显示有限公司 有机发光显示装置和制造有机发光显示装置的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040110326A1 (en) * 2002-11-20 2004-06-10 Charles Forbes Active matrix thin film transistor array backplane
TWI336914B (en) * 2003-09-26 2011-02-01 Sumitomo Chemical Co Method for evaluating solution for coating film for semiconductor
US20060228543A1 (en) * 2005-04-12 2006-10-12 Zheng-Hong Lu Metal/fullerene anode structure and application of same
JP6168742B2 (ja) * 2011-09-02 2017-07-26 キヤノン株式会社 有機ｅｌ装置
KR101936774B1 (ko) * 2012-08-10 2019-01-09 엘지디스플레이 주식회사 유기발광소자 및 그 제조방법
KR102629936B1 (ko) * 2016-07-29 2024-01-29 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102603867B1 (ko) * 2016-08-01 2023-11-21 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102602193B1 (ko) * 2016-08-12 2023-11-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN106098742A (zh) * 2016-08-18 2016-11-09 信利（惠州）智能显示有限公司 有机发光显示装置及制造方法
KR102278608B1 (ko) * 2017-03-10 2021-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728419A (zh) * 2008-10-17 2010-06-09 三星移动显示器株式会社 有机发光显示器
CN101740607A (zh) * 2008-11-10 2010-06-16 三星移动显示器株式会社 有机发光显示器件及其制造方法
CN106784354A (zh) * 2016-12-29 2017-05-31 上海天马有机发光显示技术有限公司 有机发光显示器件及其制造方法、以及有机发光显示装置
US20180190907A1 (en) * 2017-01-03 2018-07-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same
CN108573996A (zh) * 2017-03-13 2018-09-25 三星显示有限公司 有机发光显示装置和制造有机发光显示装置的方法

Also Published As

Publication number Publication date
CN113169217A (zh) 2021-07-23
US20220020830A1 (en) 2022-01-20

Similar Documents

Publication Publication Date Title
WO2022052254A1 (fr) Matrice de pixels et appareil d'affichage
US10957751B2 (en) Pixel defining layer and manufacturing method thereof, display substrate, display panel
WO2019134521A1 (fr) Structure d'agencement de pixels, son procédé de fabrication, panneau d'affichage, dispositif d'affichage et masque
WO2019134514A1 (fr) Structure d'agencement de pixels et son procédé de fabrication, panneau d'affichage, écran d'affichage et plaque de masque
US9196664B2 (en) Display device and method for fabricating the same
US10559635B2 (en) Pixel defining layer, production method thereof, and display substrate
WO2020199445A1 (fr) Dispositif d'affichage à delo et son procédé de préparation
WO2016123965A1 (fr) Écran d'affichage et son procédé de fabrication, et dispositif d'affichage
US10305049B2 (en) OLED substrate and manufacture method thereof
WO2015192517A1 (fr) Substrat de film couleur et son procédé de fabrication, panneau d'affichage électroluminescent organique, et appareil d'affichage
WO2018086370A1 (fr) Substrat de dispositif d'affichage électroluminescent organique, appareil d'affichage, et procédé de fabrication associé
US20220376007A1 (en) Display substrate, method for forming the same and display device
KR20160127290A (ko) 마스크 프레임 조립체, 그 제조 방법 및 표시 장치의 제조 방법
CN106816558B (zh) 顶发射有机电致发光显示面板、其制作方法及显示装置
WO2014127546A1 (fr) Dispositif d'affichage à diodes électroluminescentes à matrice active et son procédé de fabrication
WO2020224010A1 (fr) Panneau d'affichage à oled et son procédé de fabrication
US9048204B2 (en) Organic electroluminescent display device
JP2020502722A (ja) Ｏｌｅｄディスプレイ基板、ｏｌｅｄディスプレイ装置およびｏｌｅｄディスプレイ基板の製造方法
WO2022052010A1 (fr) Substrat d'affichage et appareil associé
US11665919B2 (en) Display panel, manufacturing method thereof, and intelligent terminal
JP2021517333A (ja) Ｏｌｅｄ表示装置及びその製造方法
US20230032598A1 (en) Display panel, display apparatus, and manufacturing method for display panel
WO2020181849A1 (fr) Masque très fin et son procédé de fabrication et dispositif d'affichage amoled
CN108231857B (zh) Oled微腔结构及其制备方法、显示装置
WO2019196798A1 (fr) Circuit de définition de pixel, structure de pixel, panneau d'affichage et dispositif d'affichage

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19886424

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19886424

Country of ref document: EP

Kind code of ref document: A1