WO2020103173A1 - 基板载具、溅镀装置及溅镀方法 - Google Patents

基板载具、溅镀装置及溅镀方法

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Publication number
WO2020103173A1
WO2020103173A1 PCT/CN2018/117770 CN2018117770W WO2020103173A1 WO 2020103173 A1 WO2020103173 A1 WO 2020103173A1 CN 2018117770 W CN2018117770 W CN 2018117770W WO 2020103173 A1 WO2020103173 A1 WO 2020103173A1
Authority
WO
WIPO (PCT)
Prior art keywords
groove
substrate
area
substrate carrier
end surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/117770
Other languages
English (en)
French (fr)
Inventor
刘洪胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of WO2020103173A1 publication Critical patent/WO2020103173A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to the field of display technology, and in particular, to a substrate carrier, a sputtering device, and a sputtering method.
  • LCD liquid crystal displays
  • other flat display devices are widely used in mobile phones, TVs, personal digital assistants, digital cameras, and notebooks due to their advantages of high image quality, power saving, thin body, and wide range of applications.
  • Various consumer electronic products such as computers and desktop computers have become the mainstream in display devices.
  • the liquid crystal display includes a liquid crystal display panel and a backlight module (backlight module).
  • the structure of the liquid crystal display panel is composed of a color filter substrate (Color Filter Substrate, CF Substrate) and a thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate) and a liquid crystal layer (Liquid Crystal Layer) disposed between the two substrates, in which there are many vertical and horizontal thin wires on the array substrate.
  • the working principle of the liquid crystal display panel is to control the rotation of the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on two glass substrates, and refract the light of the backlight module to generate a picture.
  • the material of the film layers such as pixel electrodes and common electrodes is generally indium tin oxide (ITO), and the coating of the ITO layer requires the use of a substrate carrier to fix the glass substrate on the substrate carrier to complete the ITO layer Splashing.
  • ITO indium tin oxide
  • the existing substrate carrier 100 has a rectangular frame shape and has an opening 110
  • the glass substrate 300 when the glass substrate 300 is fixed on the substrate carrier 100 for ITO sputtering, the glass substrate 300 covers the opening 110.
  • the peripheral edge forms a rectangular frame-shaped overlapping region 310 with the substrate carrier 100.
  • the distance between the inner edge and the outer edge of the overlapping area 310 formed between the glass substrate 300 and the substrate carrier 100 is generally 8 mm.
  • the distance between the edge of the resistance guarantee area on the glass substrate 300 and the edge of the glass substrate 300 is 15 mm.
  • LOC Laser Pattern on CF
  • Some substrate carrier structures cannot meet this demand.
  • due to the complexity of machine equipment, product performance and sputtering process it is not possible to simply reduce the size of the overlapping area formed between the glass substrate and the substrate carrier to meet Expand the requirements for the effective film formation area on the stripped substrate during the ITO sputtering process.
  • An object of the present invention is to provide a substrate carrier, which can reduce the area of the overlapping area between the substrate and the substrate carrier, and enlarge the effective film formation area of the substrate in the sputtering process.
  • Another object of the present invention is to provide a sputtering device that can reduce the area of the overlapping area between the substrate and the substrate carrier and increase the effective film formation area of the substrate in the sputtering process.
  • Another object of the present invention is to provide a sputtering method, which can reduce the area of the overlapping area between the substrate and the substrate carrier, and enlarge the effective film formation area of the substrate in the sputtering process.
  • the present invention provides a substrate carrier including a frame-shaped body; the inner side of the body is provided with a plurality of through slots, and the two ends of each through slot are respectively connected to the first end face and the second end of the body End face
  • Each through-groove includes a first area and a second area that are sequentially arranged along the arrangement direction of the first end surface and the second end surface; the groove depth of each through groove in the first area is greater than the groove depth in the second area.
  • the body is a rectangular frame, and the inner side surface of the body includes a first surface, a second surface, a third surface, and a fourth surface that are connected in sequence.
  • a plurality of through grooves are provided on the first surface and the third surface.
  • the plurality of through grooves on the first surface are in one-to-one correspondence with the plurality of through grooves on the third surface.
  • each through groove and the groove wall are connected by rounded corners, and the groove wall of each through groove and the inner side surface of the body are connected by rounded corners.
  • each through slot in the first zone is 10-12mm
  • the length of the first zone of each through slot in the arrangement direction of the first end face and the second end face of the body is 1-3mm
  • each through slot is in the second zone
  • the groove depth is 2-4mm
  • the distance between the two groove walls of each through groove is 75-85mm.
  • the body is placed vertically.
  • the substrate carrier further includes a fixing element provided on the first end surface of the body;
  • the fixing element is used for fixing the substrate on the first end surface of the body when the substrate is provided on the side of the first end surface of the body.
  • the invention also provides a sputtering device, including the above substrate carrier.
  • the invention also provides a sputtering method, including the following steps:
  • Step S1 Provide the above sputtering device and substrate;
  • Step S2 Step S2, fixing the substrate on the first end surface of the body, the substrate covering the opening enclosed by the inner side of the body (10) and overlapping with the plurality of through slots, the edge of the substrate is inside the body
  • the distance between the sides is a predetermined distance, which is greater than the groove depth of the through groove in the second area and smaller than the groove depth of the through groove in the first area;
  • Step S3 Sputtering a conductive material toward the side of the substrate away from the body.
  • the substrate carrier of the present invention includes a frame-shaped body.
  • the inner side of the body is provided with a plurality of through slots.
  • the two ends of each through slot are respectively connected to the first and second end faces of the body. It includes a first area and a second area arranged in order along the arrangement direction of the first end surface and the second end surface.
  • the groove depth of each through groove in the first area is greater than that in the second area.
  • the substrate covers the inside of the body
  • the opening enclosed by the side and overlapping with the plurality of through slots, the distance between the edge of the substrate and the inner side of the body is a preset distance, which is greater than the depth of the through slot in the second area and smaller than the through slot
  • the groove depth of the first zone can reduce the area of the overlapping area between the substrate and the substrate carrier, and increase the effective film formation area of the substrate in the sputtering process.
  • the sputtering apparatus of the present invention can reduce the area of the overlapping area between the substrate and the substrate carrier, and enlarge the effective film formation area of the substrate in the sputtering process.
  • the sputtering method of the present invention can reduce the area of the overlapping area between the substrate and the substrate carrier, and enlarge the effective film formation area of the substrate in the sputtering process.
  • Figure 1 is a schematic diagram of the structure of an existing substrate carrier
  • FIG. 2 is a schematic diagram of the substrate carrier shown in FIG. 1 after being loaded with a glass substrate;
  • FIG. 3 is a schematic structural view of the substrate carrier of the present invention.
  • FIG. 4 is an enlarged schematic view at A in FIG. 3;
  • FIG. 5 is a schematic diagram of the corresponding three-dimensional structure at A in FIG. 3;
  • FIG. 6 is a schematic cross-sectional view at B-B 'in FIG. 3;
  • step S2 of the sputtering method of the present invention is a schematic diagram of step S2 of the sputtering method of the present invention.
  • FIG. 9 is a schematic cross-sectional view at C-C 'in FIG. 8.
  • the present invention provides a substrate carrier including a frame-shaped body 10.
  • the inner side surface 11 of the body 10 is provided with a plurality of through slots 12 as shown in FIG. 4.
  • the two ends of each through slot 12 are respectively connected to the first end surface 13 and the second end surface of the body 10 14.
  • each through slot 12 includes a first area 121 and a second area 122 arranged in sequence along the arrangement direction of the first end surface 13 and the second end surface 14.
  • the depth of each through groove 12 in the first area 121 is greater than that in the second area 122.
  • the body 10 is a rectangular frame, and the inner side surface 11 of the body 10 includes a first surface 111, a second surface 112, a third surface 113, and a fourth surface 114 that are sequentially connected.
  • the first surface 111 and the third surface 113 are provided with a plurality of through slots 12.
  • the plurality of through grooves 12 on the first surface 111 and the plurality of through grooves 12 on the third surface 113 respectively face each other.
  • the number of the through slots 12 provided on the first surface 111 and the third surface 113 can be selected according to actual production requirements. In the embodiment shown in FIG. 3, there are six on the first surface 111 and the third surface 113
  • the through slot 12, that is, the inner side 11 of the body 10 is provided with twelve through slots 12.
  • the body 10 includes a frame-shaped first part 15 and a frame-shaped second part 16 located in the first part 15, the outer side of the second part 16 is connected to the inner side of the first part 15,
  • the distance between the two end faces of the first part 15 is greater than the distance between the two end faces of the second part 16, one of the two end faces of the first part 15 and one of the two end faces of the second part 16 are on the same plane, constituting the body
  • the second end face 14 of 10 and the other of the two end faces of the first part 15 and the other of the two end faces of the second part 16 together form the first end face 13 of the stepped body 10.
  • each through groove 12 are connected by rounded corners, and the wall of each through groove 12 and the inner side surface 11 of the body 10 are connected by rounded corners, thereby Avoiding the formation of the tip position of the body 10 due to the provision of the through-groove 12, and improving the arcing problem.
  • each through groove 12 in the second region 122 gradually increases in a direction away from the first end surface 13.
  • each through groove 12 in the first area 121 is 10-12 mm, preferably 11 mm.
  • the length of the first region 121 of each through groove 12 in the direction in which the first end surface 13 and the second end surface 14 of the body 10 are arranged is 1-3 mm, preferably 2 mm.
  • the groove depth of each through groove 12 in the second area 122 is 2-4 mm, preferably 3 mm.
  • the distance between the two groove walls of each through groove 12 is 75-85 mm, preferably 80 mm.
  • the body 10 is placed vertically, and the first end surface 13 thereof serves as a bearing surface for carrying the substrate.
  • the substrate carrier further includes a fixing element 20 disposed on the first end surface 13 of the body 10. Since the body 10 is placed vertically, when the substrate is placed on the first end surface 13 of the body 10, Falling under the force of gravity, the fixing element 20 fixes the substrate on the first end surface 13 of the body 10 at this time, thus completing the loading of the substrate on the substrate carrier.
  • the fixing element 20 can be any of the prior art that can lift the substrate
  • the element to be fixed can be, for example, a clamping device or the like.
  • the substrate carrier of the present invention is applied to a sputtering device to carry a substrate to facilitate sputtering of a conductive material on the substrate, please refer to FIGS. 8 and 9, and the substrate 1 is fixed during the sputtering.
  • the substrate 1 covers the opening enclosed by the inner side surface 11 of the body 10 and overlaps with the plurality of through slots 12, the distance between the edge of the substrate 1 and the inner side surface 11 of the body 10 is A predetermined distance, which is greater than the groove depth of the through groove 12 in the second area 122 and smaller than the groove depth of the through groove in the first area 121, and the predetermined distance can be set to be smaller than the glass substrate in the prior art
  • the width of the overlapping region formed between the substrate carrier and the substrate carrier can be set to, for example, 6 mm, and since the preset distance is greater than the groove depth of the through groove 12 in the second region 122 and smaller than the groove depth of the through groove in the first region 121,
  • the projection of the edge of the substrate 1 in the horizontal direction is between the bottom of the grooves of the plurality of through grooves 12 in the first area 121 and the bottom of the groove in the second area 122.
  • the portion of the substrate 1 that coincides with the projection of the second region 122 of the through slot 12 in the horizontal direction does not overlap with the body 10, so that this portion of the substrate 1 can be used as an effective coating area, while matching the substrate 1
  • the distance between the edge of the edge and the inner side surface 11 of the body 10 is a small preset distance, which can significantly reduce the area of the overlapping area of the substrate 1 and the substrate carrier, and greatly increase the effective film formation area of the substrate 1 in the sputtering process.
  • the present invention also provides a sputtering apparatus including the above substrate carrier, and the structure of the substrate carrier will not be described repeatedly here.
  • the substrate 1 when the sputtering device of the present invention is used to sputter conductive materials onto the substrate, the substrate 1 is fixed on the first end surface 13 of the body 10, and the substrate 1 covers the body 10 The opening formed by the inner surface 11 of the inner surface overlaps with the plurality of through grooves 12.
  • the distance between the edge of the substrate 1 and the inner surface 11 of the body 10 is a predetermined distance, which is greater than the through groove 12 in the second area
  • the groove depth of 122 is smaller than the groove depth of the through groove in the first area 121
  • the preset distance may be set to be smaller than the inner edge and the outer edge of the overlapping area formed between the glass substrate and the substrate carrier in the prior art
  • the distance may be set to 6 mm, for example, and because the preset distance is greater than the groove depth of the through groove 12 in the second area 122 and smaller than the groove depth of the through groove in the first area 121, the edge of the substrate 1 is horizontal
  • the projection above is located between the bottoms of the plurality of through-slots 12 in the first area 121 and the bottom of the second-area 122.
  • the substrate 1 and the through-slot The portion where the second region 122 of FIG. 12 coincides with the projection in the horizontal direction does not overlap with the body 10, so that the portion on the substrate 1 can be used as an effective coating area, and at the same time match the edge of the substrate 1 and the inner side 11 of the body 10
  • the distance between them is a small preset distance, which can significantly reduce the area of the overlapping area between the substrate 1 and the substrate carrier, and greatly increase the effective film formation area of the substrate 1.
  • the present invention also provides a sputtering method, including the following steps:
  • Step S1 please refer to FIGS. 3 to 6 to provide the above-mentioned sputtering device and substrate 1.
  • the structure of the sputtering device will not be described repeatedly here.
  • the substrate 1 may be a glass substrate.
  • Step S2 please refer to FIG. 8 and FIG. 9, the substrate 1 is fixed on the first end surface 13 of the body 10, the substrate 1 covers the opening enclosed by the inner side surface 11 of the body 10 and overlaps with the plurality of through slots 12,
  • the distance between the edge of the substrate 1 and the inner side surface 11 of the body 10 is a predetermined distance, which is greater than the depth of the through groove 12 in the second area 122 and smaller than the groove of the through groove 12 in the first area 121 deep.
  • Step S3 Sputtering a conductive material toward the side of the substrate 1 away from the body 10, the conductive material may be a common conductive material formed by sputtering, such as ITO.
  • the substrate 1 is fixed on the first end surface 13 of the body 10, the substrate 1 covers the opening surrounded by the inner side surface 11 of the body 10 and intersects with the plurality of through grooves 12
  • the distance between the edge of the substrate 1 and the inner side 11 of the body 10 is a predetermined distance, which is greater than the groove depth of the through groove 12 in the second area 122 and smaller than the groove depth of the through groove in the first area 121
  • the preset distance may be set to be smaller than the distance between the inner edge and the outer edge of the overlapping area formed between the glass substrate and the substrate carrier in the prior art, for example, it may be set to 6 mm, and, due to the preset distance It is greater than the groove depth of the through groove 12 in the second area 122 and smaller than the groove depth of the through groove in the first area 121, so that the projection of the edge of the substrate 1 in the horizontal direction is located in the grooves of the plurality of through grooves 12 in the first area 121
  • the portion of the substrate 1 that coincides with the horizontal projection of the second area 122 of the through groove 12 is not Overlap with the body 10, so that this part of the substrate 1 can be used as an effective coating area, and the distance between the edge of the substrate 1 and the inner side surface 11 of the body 10 is a small preset distance, which can significantly reduce the substrate 1
  • the area of the overlapping area with the substrate carrier so that after subsequent sputtering of the conductive material toward the side of the substrate 1 away from the body 10, the effective film-forming area of the substrate 1 is greatly increased.
  • the substrate carrier of the present invention includes a frame-shaped body.
  • the inner side of the body is provided with a plurality of through slots.
  • the two ends of each through slot are respectively connected to the first end face and the second end face of the body.
  • Each through slot includes The first area and the second area are arranged in order along the arrangement direction of the first end surface and the second end surface, the groove depth of each through groove in the first area is greater than that in the second area, and the substrate covers the inner side of the body during sputtering
  • the enclosed opening overlaps with a plurality of through slots, and the distance between the edge of the substrate and the inner side of the body is a predetermined distance, which is greater than the depth of the through slot in the second area and less than the through slot
  • the groove depth in one zone can reduce the area of the overlapping area between the substrate and the substrate carrier, and enlarge the effective film formation area of the substrate in the sputtering process.
  • the sputtering apparatus of the present invention can reduce the area of the overlapping area between the substrate and the substrate carrier, and enlarge the effective film formation area of the substrate in the sputtering process.
  • the sputtering method of the present invention can reduce the area of the overlapping area between the substrate and the substrate carrier, and enlarge the effective film formation area of the substrate in the sputtering process.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
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Abstract

一种基板载具、溅镀装置及溅镀方法。基板载具包括框状的本体（10），本体（10）的内侧面设有多个通槽（12），每一通槽（12）的两端分别连接本体（10）的第一端面（13）及第二端面（14），每一通槽（12）包括沿第一端面（13）及第二端面（14）排列方向依次设置的第一区（121）及第二区（122），每一通槽（12）在第一区（121）的槽深大于在第二区（122）的槽深，溅镀时，基板（1）覆盖本体（10）的内侧面围成的开口且与多个通槽（12）交叠，基板（1）的边缘与本体（10）的内侧面间的距离为一预设距离，该预设距离大于通槽（12）在第二区（122）的槽深且小于通槽（12）在第一区（121）的槽深，能够降低基板（1）与基板载具之间的重叠区域的面积，扩大溅镀制程中基板（1）的有效成膜面积。

Description

基板载具、溅镀装置及溅镀方法 技术领域
本发明涉及显示技术领域，尤其涉及一种基板载具、溅镀装置及溅镀方法。
 背景技术
液晶显示器（Liquid Crystal Display，LCD）等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
液晶显示器包括液晶显示面板及背光模组（backlight module）。液晶显示面板的结构是由一彩色滤光片基板（Color Filter Substrate，CF Substrate）、一薄膜晶体管阵列基板（Thin Film Transistor Array Substrate，TFT Array Substrate）以及一配置于两基板间的液晶层（Liquid Crystal Layer）所构成，其中在阵列基板上有许多竖直和水平的细小电线。液晶显示面板的工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
在TFT-LCD产品中，像素电极以及公共电极等膜层的材料一般为氧化铟锡（ITO），而ITO层的镀膜需使用基板载具，使玻璃基板固定在基板载具上，完成ITO层的溅镀。
请参阅图1，现有的基板载具100呈矩形框架状，具有一开口110，请参阅图2，玻璃基板300固定于基板载具100上进行ITO溅镀时，玻璃基板300覆盖所述开口110，其四周边缘与基板载具100形成矩形框状的重叠区310，玻璃基板300与基板载具100间形成的重叠区310的内侧边缘与外侧边缘之间的距离越大，玻璃基板300上的电阻保证区边缘与玻璃基板300边缘之间的距离越大，现有技术中，玻璃基板300与基板载具100间形成的重叠区310的内侧边缘与外侧边缘之间的距离一般为8mm，相应地，玻璃基板300上的电阻保证区的边缘与玻璃基板300边缘之间的距离为15mm。然而，对于采用在彩膜基板上进行镭射图案（Laser pattern on CF，LOC）技术的产品，需要保证在玻璃基板上溅镀ITO时，电阻保证区边缘与玻璃基板边缘的尺寸下降至9mm，现有的基板载具的结构无法满足这一需求，同时由于机台设备、产品性能与溅镀制程的复杂性，不能只是简单地减少玻璃基板与基板载具之间形成的重叠区的尺寸来满足扩大ITO溅镀制程中剥离基板上有效成膜面积的要求。
因此，需要对基板载具做进一步的设计改进。
 技术问题
本发明的目的在于提供一种基板载具，能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。
本发明的另一目的在于提供一种溅镀装置，能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。
本发明的又一目的在于提供一种溅镀方法，能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。
 技术解决方案
为实现上述目的，本发明提供了一种基板载具，包括框状的本体；所述本体的内侧面设有多个通槽，每一通槽的两端分别连接本体的第一端面及第二端面；
每一通槽包括沿第一端面及第二端面排列方向依次设置的第一区及第二区；每一通槽在第一区的槽深大于在第二区的槽深。
所述本体为矩形框，所述本体的内侧面包括依次连接的第一面、第二面、第三面、及第四面。
所述第一面及第三面上均设有多个通槽。
所述第一面上的多个通槽分别与第三面上的多个通槽一一相对。
每一通槽的槽底与槽壁之间通过圆角连接，每一通槽的槽壁与本体的内侧面之间通过圆角连接。
每一通槽在第一区的槽深为10-12mm，每一通槽的第一区在本体的第一端面与第二端面排列方向上的长度为1-3mm，每一通槽在第二区的槽深为2-4mm，每一通槽的两槽壁之间的距离为75-85mm。
所述本体竖直放置。
所述基板载具还包括设于本体的第一端面上的固定元件；
所述固定元件用于在将基板设于本体的第一端面一侧时将基板固定在本体的第一端面上。
本发明还提供一种溅镀装置，包括上述的基板载具。
本发明还提供一种溅镀方法，包括如下步骤：
步骤S1、提供上述的溅镀装置及基板；
步骤S2、步骤S2、将基板固定在本体的第一端面上，所述基板覆盖本体（10）的内侧面围成的开口且与多个通槽交叠，所述基板的边缘与本体的内侧面间的距离为一预设距离，该预设距离大于通槽在第二区的槽深且小于通槽在第一区的槽深；
步骤S3、向基板远离本体的一侧溅镀导电材料。
有益效果
本发明的有益效果：本发明的基板载具包括框状的本体，本体的内侧面设有多个通槽，每一通槽的两端分别连接本体的第一端面及第二端面，每一通槽包括沿第一端面及第二端面排列方向依次设置的第一区及第二区，每一通槽在第一区的槽深大于在第二区的槽深，溅镀时，基板覆盖本体的内侧面围成的开口且与多个通槽交叠，基板的边缘与本体的内侧面间的距离为一预设距离，该预设距离大于通槽在第二区的槽深且小于通槽在第一区的槽深，能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。本发明的溅镀装置能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。本发明的溅镀方法能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有基板载具的结构示意图；
图2为图1所示的基板载具装载了玻璃基板后的示意图；
图3为本发明的基板载具的结构示意图；
图4为图3中A处的放大示意图；
图5为图3中A处对应的立体结构示意图；
图6为图3中B-B’处的剖视示意图；
图7为本发明的溅镀方法的流程图；
图8为本发明的溅镀方法的步骤S2的示意图；
图9为图8中C-C’处的剖视示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3至图6，本发明提供一种基板载具，包括框状的本体10。所述本体10的内侧面11设有多个如图4所示的通槽12，请参阅图5及图6，每一通槽12的两端分别连接本体10的第一端面13及第二端面14。
请参阅图6，每一通槽12包括沿第一端面13及第二端面14排列方向依次设置的第一区121及第二区122。每一通槽12在第一区121的槽深大于在第二区122的槽深。
具体地，请参阅图3，所述本体10为矩形框，所述本体10的内侧面11包括依次连接的第一面111、第二面112、第三面113、及第四面114。
进一步地，请参阅图3，所述第一面111及第三面113上均设有多个通槽12。所述第一面111上的多个通槽12分别与第三面113上的多个通槽12一一相对。第一面111及第三面113上设置的通槽12的数量可以根据实际生产需求进行选取，在图3所示的实施例中，第一面111及第三面113上均设有6个通槽12也即该本体10的内侧面11上共设有12个通槽12。
具体地，请结合图6，所述本体10包括框状的第一部分15及位于第一部分15内的框状的第二部分16，第二部分16的外侧面与第一部分15的内侧面连接，第一部分15的两端面之间的距离大于第二部分16的两端面之间的距离，第一部分15的两端面中的一个与第二部分16的两端面中的一个位于同一平面，构成了本体10的第二端面14，而第一部分15的两端面中的另一个与第二部分16的两端面中的另一个共同构成了阶梯状的本体10的第一端面13。
具体地，请参阅图4及图5，每一通槽12的槽底与槽壁之间通过圆角连接，每一通槽12的槽壁与本体10的内侧面11之间通过圆角连，从而避免本体10因设置了通槽12而形成尖端位置，改善电弧放电（Arcing）问题。
具体地，在图6所示的实力中，每一通槽12在第二区域122的槽深沿远离第一端面13的方向逐渐增大。
具体地，每一通槽12在第一区121的槽深为10-12mm，优选为11mm。每一通槽12的第一区121在本体10的第一端面13与第二端面14排列方向上的长度为1-3mm，优选为2mm。每一通槽12在第二区122的槽深为2-4mm，优选为3mm。每一通槽12的两槽壁之间的距离为75-85mm，优选为80mm。
具体地，所述本体10竖直放置，其第一端面13作为用于对基板进行承载的承载面。
具体地，请参阅图3，所述基板载具还包括设于本体10的第一端面13上的固定元件20，由于本体10竖直放置，将基板放置在本体10的第一端面13时会受重力下落，固定元件20此时将基板固定在本体10的第一端面13上，从而完成基板装载于所述基板载具上，该固定元件20可以为现有技术中任意的能够对基板起到固定作用的元件，例如可以为夹持装置等等。
需要说明的是，本发明的基板载具应用于溅镀装置中对基板进行承载，以便于对基板进行导电材料溅镀，请参阅图8及图9，具体进行溅镀时，将基板1固定在本体10的第一端面13上，所述基板1覆盖本体10的内侧面11围成的开口且与多个通槽12交叠，基板1的边缘与本体10的内侧面11间的距离为一预设距离，该预设距离大于通槽12在第二区122的槽深且小于通槽在第一区121的槽深，所述预设的距离可以设置为小于现有技术中玻璃基板与基板载具间形成的重叠区的宽度，例如可以设置为6mm，并且，由于该预设距离大于通槽12在第二区122的槽深且小于通槽在第一区121的槽深，从而使得基板1的边缘在水平方向上的投影位于多个通槽12在第一区121的槽底与在第二区122的槽底之间，此时，由于通槽12的第二区122的存在，基板1上与通槽12的第二区122在水平方向上投影重合的部分并不与本体10交叠，从而基板1上该部分能够用于作为有效镀膜的区域，同时搭配基板1的边缘与本体10的内侧面11间的距离为较小的预设距离，能够显著降低基板1与基板载具交叠区域的面积，大大提升溅镀制程中基板1的有效成膜面积。
基于同一发明构思，本发明还提供一种溅镀装置，包括上述的基板载具，在此不再对基板载具的结构做重复性描述。
需要说明的是，请参阅图8及图9，利用本发明的溅镀装置向基板上溅镀导电材料时，将基板1固定在本体10的第一端面13上，所述基板1覆盖本体10的内侧面11围成的开口且与多个通槽12交叠，基板1的边缘与本体10的内侧面11间的距离为一预设距离，该预设距离大于通槽12在第二区122的槽深且小于通槽在第一区121的槽深，所述预设的距离可以设置为小于现有技术中玻璃基板与基板载具间形成的重叠区的内侧边缘与外侧边缘之间的距离，例如可以设置为6mm，并且，由于该预设距离大于通槽12在第二区122的槽深且小于通槽在第一区121的槽深，从而使得基板1的边缘在水平方向上的投影位于多个通槽12在第一区121的槽底与在第二区122的槽底之间，此时，由于通槽12的第二区122的存在，基板1上与通槽12的第二区122在水平方向上投影重合的部分并不与本体10交叠，从而基板1上该部分能够用于作为有效镀膜的区域，同时搭配基板1的边缘与本体10的内侧面11间的距离为较小的预设距离，能够显著降低基板1与基板载具交叠区域的面积，大大提升基板1的有效成膜面积。
基于同一发明构思，请参阅图7，本发明还提供一种溅镀方法，包括如下步骤：
步骤S1、请结合图3至图6，提供上述的溅镀装置及基板1。在此不再对溅镀装置的结构进行重复性描述。
具体地，基板1可以为玻璃基板。
步骤S2、请参阅图8及图9，将基板1固定在本体10的第一端面13上，所述基板1覆盖本体10的内侧面11围成的开口且与多个通槽12交叠，所述基板1的边缘与本体10的内侧面11间的距离为一预设距离，该预设距离大于通槽12在第二区122的槽深且小于通槽12在第一区121的槽深。
步骤S3、向基板1远离本体10的一侧溅镀导电材料，该导电材料可以为常见的通过溅镀成膜的导电材料，例如ITO。
需要说明的是，本发明的溅镀方法中，将基板1固定在本体10的第一端面13上，所述基板1覆盖本体10的内侧面11围成的开口且与多个通槽12交叠，基板1的边缘与本体10的内侧面11间的距离为一预设距离，该预设距离大于通槽12在第二区122的槽深且小于通槽在第一区121的槽深，所述预设的距离可以设置为小于现有技术中玻璃基板与基板载具间形成的重叠区的内侧边缘与外侧边缘之间的距离，例如可以设置为6mm，并且，由于该预设距离大于通槽12在第二区122的槽深且小于通槽在第一区121的槽深，从而使得基板1的边缘在水平方向上的投影位于多个通槽12在第一区121的槽底与在第二区122的槽底之间，此时，由于通槽12的第二区122的存在，基板1上与通槽12的第二区122在水平方向上投影重合的部分并不与本体10交叠，从而基板1上该部分能够用于作为有效镀膜的区域，同时搭配基板1的边缘与本体10的内侧面11间的距离为较小的预设距离，能够显著降低基板1与基板载具交叠区域的面积，从而在后续向基板1远离本体10的一侧溅镀导电材料后，大大提升基板1的有效成膜面积。
综上所述，本发明的基板载具包括框状的本体，本体的内侧面设有多个通槽，每一通槽的两端分别连接本体的第一端面及第二端面，每一通槽包括沿第一端面及第二端面排列方向依次设置的第一区及第二区，每一通槽在第一区的槽深大于在第二区的槽深，溅镀时，基板覆盖本体的内侧面围成的开口且与多个通槽交叠，基板的边缘与本体的内侧面间的距离为一预设距离，该预设距离大于通槽在第二区的槽深且小于通槽在第一区的槽深，能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。本发明的溅镀装置能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。本发明的溅镀方法能够降低基板与基板载具之间的重叠区域的面积，扩大溅镀制程中基板的有效成膜面积。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (17)

  1. 一种基板载具，包括框状的本体；所述本体的内侧面设有多个通槽，每一通槽的两端分别连接本体的第一端面及第二端面；
    每一通槽包括沿第一端面及第二端面排列方向依次设置的第一区及第二区；每一通槽在第一区的槽深大于在第二区的槽深。
  2. 如权利要求1所述的基板载具，其中，所述本体为矩形框，所述本体的内侧面包括依次连接的第一面、第二面、第三面、及第四面。
  3. 如权利要求2所述的基板载具，其中，所述第一面及第三面上均设有多个通槽。
  4. 如权利要求3所述的基板载具，其中，所述第一面上的多个通槽分别与第三面上的多个通槽一一相对。
  5. 如权利要求1所述的基板载具，其中，每一通槽的槽底与槽壁之间通过圆角连接，每一通槽的槽壁与本体的内侧面之间通过圆角连接。
  6. 如权利要求1所述的基板载具，其中，每一通槽在第一区的槽深为10-12mm，每一通槽的第一区在本体的第一端面与第二端面排列方向上的长度为1-3mm，每一通槽在第二区的槽深为2-4mm，每一通槽的两槽壁之间的距离为75-85mm。
  7. 如权利要求1所述的基板载具，其中，所述本体竖直放置。
  8. 如权利要求7所述的基板载具，还包括设于本体的第一端面上的固定元件；
    所述固定元件用于在将基板设于本体的第一端面一侧时将基板固定在本体的第一端面上。
  9. 一种溅镀装置，包括基板载具；
    所述基板载具包括框状的本体；所述本体的内侧面设有多个通槽，每一通槽的两端分别连接本体的第一端面及第二端面；
    每一通槽包括沿第一端面及第二端面排列方向依次设置的第一区及第二区；每一通槽在第一区的槽深大于在第二区的槽深。
  10. 如权利要求9所述的溅镀装置，其中，所述本体为矩形框，所述本体的内侧面包括依次连接的第一面、第二面、第三面、及第四面。
  11. 如权利要求10所述的溅镀装置，其中，所述第一面及第三面上均设有多个通槽。
  12. 如权利要求11所述的溅镀装置，其中，所述第一面上的多个通槽分别与第三面上的多个通槽一一相对。
  13. 如权利要求9所述的溅镀装置，其中，每一通槽的槽底与槽壁之间通过圆角连接，每一通槽的槽壁与本体的内侧面之间通过圆角连接。
  14. 如权利要求9所述的溅镀装置，其中，每一通槽在第一区的槽深为10-12mm，每一通槽的第一区在本体的第一端面与第二端面排列方向上的长度为1-3mm，每一通槽在第二区的槽深为2-4mm，每一通槽的两槽壁之间的距离为75-85mm。
  15. 如权利要求9所述的溅镀装置，其中，所述本体竖直放置。
  16. 如权利要求15所述的溅镀装置，其中，所述基板载具还包括设于本体的第一端面上的固定元件；
    所述固定元件用于在将基板设于本体的第一端面一侧时将基板固定在本体的第一端面上。
  17. 一种溅镀方法，包括如下步骤：
    步骤S1、提供如权利要求9所述的溅镀装置及基板；
    步骤S2、将基板固定在本体的第一端面上，所述基板覆盖本体的内侧面围成的开口且与多个通槽交叠，所述基板的边缘与本体的内侧面间的距离为一预设距离，该预设距离大于通槽在第二区的槽深且小于通槽在第一区的槽深；
    步骤S3、向基板远离本体的一侧溅镀导电材料。
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