WO2020103166A1 - 一种光源结构、光学投影模组、感测装置及设备 - Google Patents

一种光源结构、光学投影模组、感测装置及设备

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Publication number
WO2020103166A1
WO2020103166A1 PCT/CN2018/117343 CN2018117343W WO2020103166A1 WO 2020103166 A1 WO2020103166 A1 WO 2020103166A1 CN 2018117343 W CN2018117343 W CN 2018117343W WO 2020103166 A1 WO2020103166 A1 WO 2020103166A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting unit
emitting units
source structure
light source
Prior art date
Application number
PCT/CN2018/117343
Other languages
English (en)
French (fr)
Inventor
田浦延
Original Assignee
深圳阜时科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳阜时科技有限公司 filed Critical 深圳阜时科技有限公司
Priority to PCT/CN2018/117343 priority Critical patent/WO2020103166A1/zh
Priority to CN201880002353.1A priority patent/CN109643052B/zh
Publication of WO2020103166A1 publication Critical patent/WO2020103166A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2013—Plural light sources

Definitions

  • the present application belongs to the technical field of optics, and particularly relates to a light source structure, an optical projection module, a sensing device and equipment.
  • the existing three-dimensional (3D) sensing module usually uses a light source structure with an irregularly distributed light emitting unit to project a corresponding irregularly distributed light spot pattern for three-dimensional sensing.
  • forming irregularly distributed light-emitting units on a semiconductor substrate requires precise positioning of the light-emitting units, which is difficult to manufacture.
  • the distribution of the light-emitting units is designed to be arranged in a regular pattern in order to reduce the difficulty of production, the projected regular spot pattern will not be able to realize three-dimensional sensing because the relative positional relationship is too similar, and if you want to use a regular arrangement of light-emitting units to project
  • a diffractive optical element with a complex structure is expensive to manufacture and is not conducive to product promotion.
  • the application provides a light source structure, an optical projection module, a sensing device and equipment for realizing three-dimensional sensing.
  • An embodiment of the present application provides a light source structure, which is used to emit a light beam to a measured object for three-dimensional sensing.
  • the light source structure includes a semiconductor substrate and a plurality of light emitting units formed on the semiconductor substrate.
  • the light emitting units are distributed on the semiconductor substrate in the form of a two-dimensional lattice. At least three adjacent light emitting units are arranged on the semiconductor substrate at unequal intervals.
  • the peak value of the normalized correlation coefficient between the light-emitting units as a whole is greater than or equal to 0.3 and less than 1.
  • the ratio of the set of light-emitting unit sub-regions whose correlation coefficient with the reference region is greater than or equal to a preset threshold to all light-emitting units is The product of the average value of the correlation coefficient corresponding to each sub-region of the light-emitting unit in the set is greater than or equal to 0.25 and less than 1.
  • the ratio of the number of light-emitting units included in the reference sub-region to the total number of all light-emitting units is greater than or equal to 10%.
  • the reference sub-region includes more than ten light-emitting units.
  • the correlation coefficient is a normalized correlation coefficient
  • the preset correlation coefficient threshold is 0.3.
  • the ratio of the set of light-emitting unit sub-regions to all light-emitting units is the number of light-emitting units included in the set of light-emitting unit sub-regions accounting for the total number of all light-emitting units proportion.
  • the ratio of the set of light-emitting unit sub-regions to all light-emitting units is the ratio of the sum of the areas of the light-emitting unit sub-regions in the set to the total area of the entire light-emitting region.
  • the product is greater than or equal to 0.3 and less than 0.5.
  • the light-emitting unit set includes two or more types of light-emitting unit sets that are arranged according to different arrangement patterns, and the normalized correlation coefficient between the different types of light-emitting unit sets is less than 0.3, the same There is no correlation between the light-emitting units in one set of light-emitting units.
  • the light source structure includes two sets of light emitting units, the normalized correlation coefficient between the light emitting units in the same set of light emitting units is less than 0.3, and the The normalized correlation coefficient is greater than or equal to 0.3 and less than or equal to 1.
  • the total number of all light-emitting units is greater than or equal to 50.
  • the light emitting unit is selected from any one of vertical cavity surface emitting lasers, light emitting diodes, and laser diodes, and combinations thereof.
  • the light emitting unit emits laser light with a current signal, and the laser current is greater than 1 mA.
  • An embodiment of the present application provides an optical projection module for projecting a patterned light beam with a preset pattern onto a target to be measured for three-dimensional sensing, which includes a beam adjustment element, a patterned optical element, and any implementation as described above
  • the light source structure provided by the way.
  • the light beam adjusting element is used to adjust the light beam emitted by the light source structure to meet the preset propagation characteristic requirements.
  • the patterned optical element is used to rearrange the light field emitted by the light source structure to form a patterned light beam with a predetermined pattern.
  • the optical projection module further includes a driving circuit that provides current to drive the light emitting unit to emit light.
  • the beam adjustment element includes one or more of a collimating element, a beam expanding element, a reflecting element, an optical microlens array group, or a grating.
  • the patterned optical element includes one or more of a diffractive optical element, an optical microlens array, or a grating.
  • Embodiments of the present application provide a sensing device for sensing three-dimensional information of a measured object. It includes the optical projection module and the sensing module provided in the above embodiments.
  • the sensing module is used to sense the preset pattern projected by the optical module on the object to be measured and analyze the preset The image of the pattern acquires the three-dimensional information of the object to be measured.
  • the sensing module includes a lens, an image sensor, and an image analysis processor, and the image sensor senses the image formed by the patterned light beam on the measured object through the lens, the image The analysis processor analyzes the sensed image projected on the measured object to obtain three-dimensional information of the measured object.
  • the sensing device is a three-dimensional face recognition device for sensing the three-dimensional information on the surface of the object to be measured and identifying the identity of the object to be measured accordingly.
  • An embodiment of the present application provides an apparatus, including the sensing device provided by the above embodiment.
  • the device performs the corresponding function according to the three-dimensional information of the measured object sensed by the sensing device.
  • the sensing device is a three-dimensional face recognition device for sensing three-dimensional information on the surface of the target to be measured
  • the device is a mobile phone, which is used to sense the three-dimensional face recognition device The three-dimensional information of the face of the measured object to identify the identity of the measured object.
  • the light source structure, the optical projection module, the sensing device and the device provided in the embodiments of the present application are related to each other because the arrangement positions of the light emitting units of the different light emitting unit sets are related to each other.
  • the location can be accurately determined more easily, reducing the difficulty of production.
  • FIG. 1 is a schematic structural diagram of a light source structure provided by the first embodiment of the present application.
  • FIG. 2 is a schematic diagram of the light-emitting unit distribution of the light source structure shown in FIG. 1.
  • FIG. 3 is a schematic structural diagram of a light source structure provided by a second embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a light source structure provided by a third embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a light source structure provided by a fourth embodiment of the present application.
  • FIG. 6 is a schematic diagram of calculating correlation coefficients between sets of light-emitting units with different sizes.
  • FIG. 7 is a schematic structural diagram of a light source structure provided by a fifth embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a light source structure provided by a sixth embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of an optical module provided by a seventh embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of a sensing device provided in an eighth embodiment of the present application.
  • FIG. 11 is a schematic structural diagram of a device provided in a ninth embodiment of the present application.
  • connection should be understood in a broad sense, for example, it can be fixed or detachable Connection, or integrated connection; it can be mechanical connection, electrical connection or mutual communication; it can be directly connected, or it can be indirectly connected through an intermediary, it can be the connection between two components or the mutual connection between two components Role relationship.
  • the first embodiment of the present application provides a light source structure 1 for emitting a light beam to a measured object for three-dimensional sensing.
  • the light beam may be a light beam with a specific wavelength according to the sensing principle and application scenario.
  • the light beam is used to sense the three-dimensional information of the measured object, and may be an infrared or near-infrared wavelength light beam with a wavelength range of 750 nanometers (Nanometer, nm) to 1650 nm.
  • the light source structure 1 includes a semiconductor substrate 10, a plurality of light emitting units 12 formed on the semiconductor substrate 10, an anode 14 and a cathode 16.
  • the light-emitting unit 12 is a semiconductor structure capable of emitting light under the action of electrical excitation, and is formed on the semiconductor substrate 10 through processes such as photolithography, etching, and / or metal organic chemical vapor deposition.
  • the light emitting unit 12 may be, but not limited to, a vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL).
  • the anode 14 and the cathode 16 are respectively disposed on opposite end surfaces of the semiconductor substrate 10, and the light-emitting unit 12 is excited by the current signal to emit light.
  • the excitation current is greater than 1 mA.
  • the light emitting unit 12 may also be a light emitting diode (Light Emitting Diode, LED) or a laser diode (Laser Diode, LD). Therefore, the light emitting unit 12 is selected from any one of VCSEL, LED, and LD, and a combination thereof.
  • LED Light Emitting Diode
  • LD Laser Diode
  • the light-emitting units 12 are distributed in the light-emitting area of the semiconductor substrate 10 in the form of a two-dimensional lattice, and at least three adjacent light-emitting units 12 are unequal on the semiconductor substrate 10 Arranged at intervals. All the light-emitting units 12 have correlation as a whole.
  • the correlation of the arrangement pattern composed of the plurality of light-emitting units 12 is usually evaluated by calculating the correlation coefficient f n between the plurality of light-emitting units 12, if the calculated correlation coefficient f n is greater than or equal to If the threshold is preset, then the light-emitting units 12 are considered to be related.
  • the calculation formula of the correlation coefficient f n may be, but not limited to, a normalized correlation coefficient formula (Normalized Correlation Coefficient, NCC), and the expression is as follows:
  • the R 0 is a reference sub-region of the light-emitting unit 12 randomly selected from all the light-emitting units 12 on the semiconductor substrate 10 according to a preset condition, and the light-emitting unit 12 refers to the sub-region R 0 to traverse the entire light-emitting region of the semiconductor substrate 10 except R Other parts other than 0 and calculate the correlation coefficient f n of the light-emitting unit 12 reference sub-region R 0 and the light-emitting unit sub-region R n passed through during the traversal process.
  • Said H is the height of the sub-region R n of the light-emitting unit 12 under consideration
  • W is the width of the sub-region R n of the light-emitting unit 12 under consideration.
  • the preset condition for selecting the reference sub-region R 0 of the light-emitting unit 12 is that the ratio of the number of light-emitting units 12 included in the reference sub-region of the selected light-emitting unit 12 to the total number of all light-emitting units 12 is greater than or equal to 10% or the selected light-emitting
  • the unit 12 reference sub-region includes more than ten light-emitting units 12.
  • the total number of all light-emitting units 12 is greater than or equal to 50.
  • the light-emitting unit 12 refers to the sub-region R 0 to perform traversal in a manner of translation in a plane rectangular coordinate system.
  • the The center is the origin to expand the area of the light-emitting unit 12 to avoid that when the physical size of the light-emitting unit 12 is small, the background area in the entire arrangement pattern is too large, so that the normalized correlation coefficient calculated by the above formula cannot be reflected
  • the actual correlation between the light emitting units 12 is shown.
  • the arrangement pattern of the light-emitting units 12 with low correlation can also calculate a high normalized correlation coefficient.
  • the calculated normalized correlation coefficient of the arrangement pattern of the light-emitting unit 12 can reflect the actual correlation between the light-emitting units 12 to the greatest extent.
  • the regions of each light-emitting unit 12 are expanded at the same scale, and the degree of expansion should be such that adjacent regions of the light-emitting units 12 do not overlap each other after expansion.
  • the light-emitting unit 12 may refer to the sub-region R 0 to traverse in a polar coordinate system by rotating around the coordinate origin.
  • f n 1
  • the selected light-emitting unit 12 refers to the light-emitting unit 12 in the sub-region R 0 and the light-emitting unit 12 in the sub-region R n of the light-emitting unit 12 passing through during traversal is exactly the same, that is, the light-emitting unit 12 refers to the sub-region R 0 is completely related to the light emitting unit 12 sub-region R n .
  • the selected light-emitting unit 12 refers to the light-emitting unit 12 in the sub-region R 0 and the light-emitting unit 12 in the sub-region R n of the light-emitting unit 12 passing through during traversing partially overlaps, that is, the light-emitting unit 12
  • the reference sub-region R 0 is partially related to the sub-region R n of the light-emitting unit 12.
  • a larger normalized correlation coefficient f n indicates that the selected light-emitting unit 12 refers to the light-emitting unit 12 in the reference sub-region R 0 and passes through The more the light-emitting units 12 in the light-emitting unit 12 sub-region R n overlap each other, that is, the higher the correlation between the light-emitting unit 12 reference sub-region R 0 and the light-emitting unit 12 sub-region R n .
  • the normalized correlation coefficient f n ⁇ 0.3 it can be considered that the reference sub-region R 0 of the light-emitting unit 12 is related to the sub-region R n of the light-emitting unit 12, and there is a correlation between the light-emitting units 12. If the normalized correlation coefficient f n ⁇ 0.5, it can be considered that the reference sub-region R 0 of the light-emitting unit 12 is highly correlated with the sub-region R n of the light-emitting unit 12, and there is a high correlation between the light-emitting units 12.
  • the correlation coefficient is a normalized correlation coefficient f n
  • the preset threshold is 0.3, that is, if the light-emitting unit 12 refers to the sub-region R 0 during the traversal process, the calculated normalization exists.
  • the normalized correlation coefficient f n ⁇ 0.3, or the peak value of the normalized correlation coefficient f n calculated by the light-emitting unit 12 with reference to the sub-region R 0 during the traversal process f n_max ⁇ 0.3 can be regarded as the light-emitting unit There is a correlation between 12 as a whole.
  • the position of the light-emitting units 12 on the semiconductor substrate 10 can be easily determined, which reduces the difficulty of manufacturing.
  • the second embodiment of the present application provides a light source structure 2, which is basically the same as the light source structure 1 in the first embodiment, and the main difference is that when evaluating the correlation between the light emitting units 22
  • the ratio of the light-emitting units 22 that is greater than or equal to the preset normalized correlation coefficient threshold to all the light-emitting units 22 is also considered to more objectively evaluate the light-emitting unit 22 Correlation between.
  • a correlation strength function for evaluating the correlation between the light-emitting units 22 is defined Where a is the ratio of the light-emitting units 22 whose correlation coefficient is greater than or equal to the preset correlation coefficient threshold to all the light-emitting units 22, and the calculation formula is Where R 0 is a reference sub-region of the light-emitting unit 22 selected according to a preset condition, the light-emitting unit 22 refers to the sub-region R 0 to traverse the entire light-emitting region of the semiconductor substrate 20 and calculates the light-emitting unit 22 reference sub-region R 0 and the entire semiconductor
  • the correlation coefficients of the light-emitting regions of the substrate 20 other than R 0 assume that there are N sub-regions of the light-emitting unit 22 whose correlation coefficient with R 0 is greater than or equal to a preset correlation coefficient threshold, respectively expressed as R 1 , ..., R N , then P represents the set of all light emitting units 22 whose correlation coefficient between the light emitting area of the entire
  • the S is a collection of all light-emitting units on the entire semiconductor substrate 20.
  • the ratio may be, but not limited to, the ratio of the number of related light-emitting units 22 to the total number of all light-emitting units 22, or the ratio of the area of the related light-emitting units 22 to the total surface of the entire light-emitting area Evaluation can be selected according to the actual situation.
  • the P and S may be the number of the light-emitting units 22 in the corresponding light-emitting unit 12 set. If the light emitting units 22 are evenly distributed, the P and S may also be the area of the area where the corresponding light emitting units 22 are located. It can be understood that, in the calculation of P and S here, the overlapping parts that may occur in R 0 , R 1 , ..., R N are calculated only once without repeated calculation.
  • the preset correlation coefficient threshold is 0.3, that is, when f n ⁇ 0.3, it is considered that the light-emitting unit 12 in the corresponding light-emitting unit 22 sub-region R n (0 ⁇ n ⁇ N) is
  • the selected light-emitting unit 22 has correlation between the reference sub-regions R 0 , and the light-emitting unit 22 sub-region R n (0 ⁇ n ⁇ N) can be applied to the correlation intensity function defined above To evaluate the overall correlation of all light emitting units 22 on the semiconductor substrate 10.
  • the a is the ratio of the light-emitting units 22 having correlation to all the light-emitting units 22, so 0 ⁇ a ⁇ 1. Said Is the average value of the normalized correlation coefficient f n , so Therefore, the correlation strength function
  • the calculated correlation strength value F also satisfies the value range 0 ⁇ F ⁇ 1.
  • the correlation intensity value F satisfies 0.25 ⁇ F ⁇ 0.5, all the light emitting units 22 on the semiconductor substrate 20 have correlation as a whole. If the correlation intensity value F satisfies 0.5 ⁇ F ⁇ 1, all the light-emitting units 22 on the semiconductor substrate 20 are strongly correlated as a whole.
  • the calculated correlation intensity value F may be different according to the reference sub-region R 0 of the light-emitting unit 22 selected in the calculation process
  • the change is not always consistent, so when determining the correlation strength of all the light-emitting units 22 on the semiconductor substrate 20 as a whole, based on the correlation calculated by all light-emitting units 22 satisfying the preset conditions with reference to the sub-region R 0
  • the maximum value of the sexual intensity value F is used for judgment.
  • the correlation intensity value F calculated according to the light-emitting unit 22 reference sub-region R 0 satisfies the corresponding range of the correlation intensity defined above That is, the light-emitting unit 22 on the semiconductor substrate 20 has a corresponding correlation strength as a whole.
  • all the light-emitting units 22 on the semiconductor substrate 20 have correlation as a whole.
  • the maximum value F max of the correlation intensity value F of the entire light-emitting units 22 is greater than or equal to 0.25 and less than 1. That is, the correlation intensity value F calculated by the light-emitting unit 22 selected according to the preset condition with reference to the sub-region R 0 is greater than or equal to 0.25 and less than 1.
  • all the light emitting units 22 on the semiconductor substrate 20 have a strong correlation as a whole.
  • the maximum value F max of the correlation intensity value F of the entire light-emitting units 22 is greater than or equal to 0.5 and less than 1. That is, the correlation intensity value F calculated by the light-emitting unit 22 selected according to the preset condition with reference to the sub-region R 0 is greater than or equal to 0.5 and less than 1.
  • the third embodiment of the present application provides a light source structure 3, which is basically the same as the light source structure 2 in the second embodiment, and the main difference is that the reference sub-region R of the light-emitting unit 32 selected in the calculation 0 and the traversed correlation coefficient f n between the other portions of the light-emitting region of the semiconductor substrate 30 when examining the light-emitting unit 32 reference sub-region R 0 and the traversed light-emitting unit 32 sub-region R n (0 ⁇ n ⁇ N )
  • the normalized correlation coefficient f n between the changing sub-regions R ′ n (0 ⁇ n ⁇ N) of the light-emitting unit 32 obtained after the transformation T.
  • the transformation T may be, but not limited to, an affine transformation.
  • the affine transformation includes transformations such as translation, rotation, and mirroring. In this embodiment, the transformations T are all referred to a plane rectangular coordinate system.
  • the light-emitting unit 32 sub-region R n (0 ⁇ n ⁇ N) of the original light-emitting unit 32 on the semiconductor substrate 30 undergoes the conversion T, and the conversion sub-region R ′ n of the light-emitting unit 32 and the selected light-emitting unit 32 reference sub
  • the normalized correlation coefficient f n between the regions R 0 satisfies f n ⁇ 0.3
  • the number of 32 light-emitting units in the sub-region R n (0 ⁇ n ⁇ N) of the light-emitting unit 32 is related to the corresponding normalization
  • the coefficient f n is applied to the correlation strength function defined above To evaluate the overall correlation of all light emitting units 32 on the semiconductor substrate 30.
  • the expression of the normalized correlation coefficient f n is as follows:
  • H is the height of the sub-region R n (0 ⁇ n ⁇ N) of the light-emitting unit 32 under consideration
  • W is the width of the sub-region R n (0 ⁇ n ⁇ N) of the light-emitting unit 32 under consideration.
  • the fourth embodiment of the present application provides a light source structure 4, which is basically the same as the light source structure 1 in the first embodiment, and the main difference is that all the light emitting units 42 on the semiconductor substrate 40 can Divided into a plurality of light-emitting unit sets 420, the plurality here refers to two or more than two. There is a correlation between the light-emitting unit sets 420. There is at least one light-emitting unit 42 within the light-emitting unit set 420 that has no correlation.
  • the correlation between the light-emitting unit sets 420 can be evaluated by calculating the normalized correlation coefficient f n between the light-emitting unit sets 420.
  • the calculation formula is as described above and can be:
  • R 0 and R n are respectively two sets of light emitting units 420 that need to calculate the normalized correlation coefficient f n
  • H is the height of the light emitting unit set 420 under consideration
  • W is the width of the light emitting unit set 420 under consideration.
  • the value range of the normalized correlation coefficient f n is 0 ⁇ f n ⁇ 1, when f n ⁇ 0.3, it is considered that there is no correlation between the light-emitting unit sets 420; when f n ⁇ 0.3, it is considered that between said light emitting unit 420 having a set of correlation; when f n ⁇ 0.5, it is considered set between the light emitting unit 420 are highly correlated.
  • the number of light-emitting units 42 included in the light-emitting unit set 420 is greater than or equal to 10, or the ratio of the number of light-emitting units 42 included in the total number of all light-emitting units 42 is greater than or equal to 10%.
  • the normalized correlation coefficient between the light-emitting unit sets 420 is 0.3 ⁇ f n ⁇ 1.
  • the light-emitting unit sets 420 may be highly correlated, and the normalized correlation coefficient between the light-emitting unit sets 420 is 0.5 ⁇ f n ⁇ 1.
  • the light-emitting unit set 421 is used as a reference sub-region to traverse the extended region 400 according to the formula of the normalized correlation coefficient f n to calculate the normalization between the light-emitting units 42 in the entire region 400 correlation coefficient f n set as the light emitting means and the light emitting unit 420 a set of normalized correlation coefficient between 421 f n.
  • the coordinate values in the extended area 400 except for the light emitting unit set 420 and the light emitting unit set 421 need to be set to 0, so as to eliminate The influence caused by the normalized correlation coefficient f n between the light-emitting unit 42 originally existing in the unit set 420 and the light-emitting unit set 421.
  • the correlation between the light-emitting unit sets 420 may be that each two of the light-emitting unit sets 420 are related to each other, or there may be a case where at least two light-emitting unit sets 420 have correlation Not all the light-emitting unit sets 420 are related to each other.
  • the correlation between the light-emitting units 42 inside the light-emitting unit set 420 adopts the correlation intensity function described in the first embodiment
  • the correlation intensity value F ⁇ 0.1 between all the light-emitting units 42 in the light-emitting unit set 420 there is no correlation between the light-emitting units 42 in at least one of the light-emitting unit sets 420, and the correlation intensity value F ⁇ 0.1 between all the light-emitting units 42 in the light-emitting unit set 420.
  • the fifth embodiment of the present application provides a light source structure 5, which is basically the same as the light source structure 4 in the fourth embodiment, and the main difference is that the light emitting unit set 520 includes a third type of light emitting unit Set 521 and fourth type light emitting unit set 522. There is no correlation between the light-emitting units 52 in the third type of light-emitting unit set 521.
  • the light-emitting units 52 in the third type of light-emitting unit set 521 are all arranged according to the same first arrangement pattern. There is no correlation between the light-emitting units in the fourth type of light-emitting unit set 522.
  • the light emitting units 52 in the fourth type light emitting unit set 522 are all arranged according to the same second arrangement pattern, and the second arrangement pattern is different from the first arrangement pattern. There is no correlation between the different types of light-emitting unit sets 521 and 522. That is, the normalized correlation coefficient between the light-emitting unit sets 521 and 522 of different classes is less than 0.3.
  • all the light emitting units 52 on the semiconductor substrate 50 can be divided into nine light emitting unit sets 520.
  • the number of the third type light emitting unit set 521 is four, and the number of the fourth type light emitting unit set 522 is five.
  • Each light-emitting unit set 520 includes at least ten light-emitting units 52. It can be understood that the positions of the third type light emitting unit set 521 and the fourth type light emitting unit set 522 may be any grid in the matrix arrangement, as long as the requirements of the corresponding number and arrangement pattern are satisfied.
  • the total number of the light-emitting unit sets 520 is not limited to nine, and the arrangement manner is not limited to nine-grid or matrix arrangement. It suffices that at least one set of the third type light emitting unit set 521 and at least one set of the fourth type light emitting unit set 522 are satisfied.
  • the sixth embodiment of the present application provides a light source structure 6, which is basically the same as the light source structure 4 in the fourth embodiment, and the main difference is that the light source structure 6 includes two light emitting unit sets 620 . There is no correlation between the light-emitting units 62 in each light-emitting unit set 620. There is a correlation between the two light-emitting unit sets 620. That is, the set of two light emitting units normalized correlation coefficient between 620 0.3 ⁇ f n ⁇ 1, the normalized correlation coefficient f n ⁇ 0.3 between the light emitting cells 62 within each of the light emitting unit 620. In this embodiment, each light-emitting unit set 620 includes at least one hundred unrelated light-emitting units 62.
  • the seventh embodiment of the present application provides an optical projection module 7 for projecting a patterned light beam with a preset pattern onto an object to be measured for sensing.
  • the optical projection module 7 includes a beam adjustment element 70, a patterned optical element 72, and the light source structure 1 in the first to sixth embodiments described above.
  • the beam adjustment element 70 includes, but is not limited to, a collimating element, a beam expanding element, a reflecting element, an optical microlens array group, and a grating.
  • the light beam adjusting element 70 is used to adjust the light beam emitted by the light source structure 1 so as to satisfy the preset propagation characteristic requirements, such as: propagation direction, collimation, beam aperture, etc.
  • the patterned optical element 72 is used to rearrange the light field emitted by the light source structure 1 to form a patterned light beam that can project a preset pattern on the object to be measured.
  • the patterned optical element 72 includes but is not limited to one or more of a diffractive optical element (Diffractive Optical Element, DOE), an optical microlens array group, or a grating.
  • the diffractive optical element replicates the light beam emitted by the light source structure 1 and spreads it within a preset angle range to form a patterned light beam and project it onto the object to be measured.
  • the eighth embodiment of the present application provides a sensing device 8 for sensing three-dimensional information of a measured object.
  • the sensed spatial information of the measured object can be used to identify the measured object or construct a three-dimensional model of the measured object.
  • the sensing device 8 includes the optical projection module 7 and the sensing module 80 as provided in the seventh embodiment described above.
  • the optical projection module 7 is used to project a specific light beam onto the measured object.
  • the sensing module 80 includes a lens 81, an image sensor 82, and an image analysis processor 83.
  • the image sensor 82 senses the image formed by the patterned light beam on the object to be measured through the lens 81.
  • the image analysis processor 83 analyzes the sensed image projected on the measured object to obtain three-dimensional information of the measured object.
  • the sensing device 8 is a three-dimensional face recognition device that senses the three-dimensional information on the surface of the measured object and recognizes the identity of the measured object accordingly.
  • the sensing module 80 analyzes the three-dimensional information of the surface of the measured target according to the shape change of the preset pattern projected on the measured target by the sensed patterned light beam and performs the measurement on the measured target accordingly Face recognition.
  • the ninth embodiment of the present application provides a device 9, such as a mobile phone, a notebook computer, a tablet computer, a touch interactive screen, a door, a vehicle, a robot, an automatic CNC machine tool, and so on.
  • the device 9 includes at least one sensing device 8 provided in the eighth embodiment described above.
  • the device 9 is used to perform corresponding functions according to the sensing result of the sensing device 8.
  • the corresponding functions include, but are not limited to, any one of unlocking, paying, launching a preset application, avoiding obstacles, and recognizing a user's facial expression using deep learning technology to determine the user's emotions and health One or more.
  • the sensing device 8 is a three-dimensional face recognition device that senses the three-dimensional information on the surface of the measured object and recognizes the identity of the measured object accordingly.
  • the device 9 is an electronic terminal such as a mobile phone, a notebook computer, a tablet computer, a touch interactive screen equipped with the three-dimensional face recognition device, or a door, a vehicle, a security inspection instrument, an immigration gate, etc. that involve access authority Device 9.
  • the light source structure 1, the optical projection module 7, the sensing device 8 and the device 9 provided in this application are related to each other due to the arrangement positions of the light emitting units 12 of the different light emitting unit sets 120 In fact, the position of the light-emitting unit 12 on the semiconductor substrate 10 can be easily and accurately determined, which reduces the difficulty of manufacturing.

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Abstract

一种光源结构（1），其用于发射光束至一被测目标物上进行三维感测。光源结构（1）包括半导体基底（10）及形成在半导体基底（10）上的多个发光单元（12）。发光单元（12）以二维点阵的形式分布在半导体基底（10）上。其中至少三个相邻发光单元（12）在半导体基底（10）上非等间距排布。发光单元（12）之间整体上的归一化相关系数的峰值大于或等于0.3而小于1。

Description

一种光源结构、光学投影模组、感测装置及设备 技术领域
本申请属于光学技术领域，尤其涉及一种光源结构、光学投影模组、感测装置及设备。
背景技术
现有的三维(Three Dimensional,3D)感测模组通常采用具有不规则分布发光单元的光源结构来投射出相应的不规则分布光斑图案来进行三维感测。然而，在半导体基底上形成不规则分布的发光单元需要对发光单元进行精准定位，制作难度高。而如果为了降低制作难度将发光单元分布设计成规则图案排布，则所投射出来的规则光斑图案会因为相对位置关系太相似而无法实现三维感测，而若想运用规则排布发光单元来投射出不规则分布的光斑图案还需要特别定制出结构复杂的衍射光学元件来对光源发射出的规则分布光场进行重新排布，但是此种结构复杂的衍射光学元件造价昂贵，不利于产品推广。
发明内容
本申请提供一种用于实现三维感测的光源结构、光学投影模组、感测装置及设备。
本申请实施方式提供一种光源结构，其用于发射光束至一被测目标物上进行三维感测。所述光源结构包括半导体基底及形成在所述半导体基底上的多个发光单元。所述发光单元以二维点阵的形式分布在所述半导体基底上。其中至少三个相邻发光单元在半导体基底上非等间距排布。所述发光单元之间整体上的归一化相关系数的峰值大于或等于0.3而小于1。
在某些实施方式中，所述发光单元中存在参考区域，与该参考区域之间的相关系数大于或等于预设阈值的发光单元子区域所组成的集合占全部发光单元的比例值与所述集合中各个发光单元子区域对应的相关系数的平均值的乘积大于或等于0.25而小于1。
在某些实施方式中，所述参考子区域包括的发光单元个数占全部发光单元总数的比例大于或等于10％。
在某些实施方式中，所述参考子区域包括十个以上发光单元。
在某些实施方式中，所述相关系数为归一化相关系数，所述预设的相关系数阈值为0.3。
在某些实施方式中，所述发光单元子区域所组成的集合占全部发光单元的比例值为所述发光单元子区域所组成的集合内包括的发光单元个数占全部发光单元总个数的比例。
在某些实施方式中，所述发光单元子区域所组成的集合占全部发光单元的比例值为所述集合内的发光单元子区域的面积之和占整个发光区域总面积的比例。
在某些实施方式中，所述乘积大于或等于0.3而小于0.5。
在某些实施方式中，所述发光单元集合包括两类以上分别按照不同排布图案进行发光单元排布的发光单元集合，不同类的发光单元集合之间的归一化相关系数小于0.3，同一个所述发光单元集合内的发光单元之间不具有相关性。
在某些实施方式中，所述光源结构包括两个发光单元集合，同一个所述发光单元集合内的发光单元之间的归一化相关系数小于0.3，所述两个发光单元集合之间的归一化相关系数大于等于0.3而小于或等于1。
在某些实施方式中，所述全部发光单元的总个数大于或等于50。
在某些实施方式中，所述发光单元选自垂直腔面发射激光器、发光二极管及激光二极管中的任意一种及其组合。
在某些实施方式中，所述发光单元由电流信号激光发光，所述激光电流大于1mA。
本申请实施方式提供一种光学投影模组，用于投射具有预设图案的图案化光束至被测目标物上进行三维感测，其包括光束调整元件、图案化光学元件及如上述任意一实施方式提供的光源结构。所述光束调整元件用于对光源结构所发出的光束进行调整以使其满足预设的传播特性要求。所述图案化光学元件用于将光源结构发出的光场进行重新排布以形成具有预设图案的图案化光束。
在某些实施方式中，所述光学投影模组还包括驱动电路，所述驱动电路提供电流以驱动所述发光单元进行发光。
在某些实施方式中，所述光束调整元件包括准直元件、扩束元件、反射元件、光学微透镜阵列组或光栅中的一种或几种。
在某些实施方式中，所述图案化光学元件包括衍射光学元件、光学微透镜阵列或光栅中的一种或几种。
本申请实施方式提供一种感测装置，其用于感测被测目标物的三维信息。其包括上述实施方式提供的光学投影模组及感测模组，所述感测模组用于感测所述光学模组在被测目标物上投射的预设图案并通过分析所述预设图案的图像获取被测标的物的三维信息。
在某些实施方式中，所述感测模组包括镜头、图像传感器和图像分析处理器，所述图像传感器通过镜头感测所述图案化光束在被测目标物上形成的图像，所述图像分析处理器分析所感测到的投射在被测目标物上的图像以获取被测目标物的三维信息。
在某些实施方式中，所述感测装置为用于感测被测目标物表面的三维信息并据此识别被测目标物身份的三维脸部识别装置。
本申请实施方式提供一种设备，包括上述实施方式提供的感测装置。所述设备根据所述感测装置所感测到的被测目标物的三维信息来执行相应功能。
在某些实施方式中，所述感测装置为用于感测被测目标物表面的三维信息 的三维脸部识别装置，所述设备为手机，用于根据三维脸部识别装置所感测到的被测目标物脸部的三维信息来识别被测目标物的身份。
本申请实施方式所提供的光源结构、光学投影模组、感测装置及设备因所述不同发光单元集合的发光单元相互之间的排布位置具有相关性，所述发光单元在半导体基底上的位置能够较容易地实现精准确定，降低了制作难度。
本申请实施方式的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本申请实施方式的实践了解到。
附图说明
图1是本申请第一实施方式提供的光源结构的结构示意图。
图2是图1中所述光源结构的发光单元分布示意图。
图3是本申请第二实施方式提供的光源结构的结构示意图。
图4是本申请第三实施方式提供的光源结构的结构示意图。
图5是本申请第四实施方式提供的光源结构的结构示意图。
图6是计算大小不一致的发光单元集合之间相关系数原理图。
图7是本申请第五实施方式提供的光源结构的结构示意图。
图8是本申请第六实施方式提供的光源结构的结构示意图。
图9是本申请第七实施方式提供的光学模组的结构示意图。
图10是本申请第八实施方式提供的感测装置的结构示意图。
图11是本申请第九实施方式提供的设备的结构示意图。
具体实施方式
下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。在本申请的描述中，需要理解的是，术语“第一”、 “第二”仅用于描述，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或排列顺序。由此，限定有“第一”、“第二”的技术特征可以明示或者隐含地包括一个或者更多个所述技术特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定或限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体化连接；可以是机械连接，也可以是电连接或相互通信；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件之间的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
下文的公开提供了许多不同的实施方式或示例用来实现本申请的不同结构。为了简化本申请的公开，下文仅对特定例子的部件和设定进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复使用参考数字和/或参考字母，这种重复使用是为了简化和清楚地表述本申请，其本身不指示所讨论的各种实施方式和/或设定之间的特定关系。此外，本申请在下文描述中所提供的各种特定的工艺和材料仅为实现本申请技术方案的示例，但是本领域普通技术人员应该意识到本申请的技术方案也可以通过下文未描述的其他工艺和/或其他材料来实现。
进一步地，所描述的特征、结构可以以任何合适的方式结合在一个或更多实施方式中。在下文的描述中，提供许多具体细节以便能够充分理解本申请的实施方式。然而，本领域技术人员应意识到，即使没有所述特定细节中的一个或更多，或者采用其它的结构、组元等，也可以实践本申请的技术方案。在其它情况下，不详细示出或描述公知结构或者操作以避免模糊本申请之重点。
应该理解的是，此处所述的实施方式和/或方法在本质上是示例性的，不应视为对本申请技术方案的局限。此处所描述的实施方式或方法仅是本申请相关技术思想所涵盖的众多技术方案中的一种或多种，因此所描述的方法技术方案 的各个步骤可以按照所标示的次序执行，可以按照其他次序执行，可以同时执行，或者在某些情况下被省略，上述的改动均应视为本申请所要求保护的技术方案所涵盖的范围。
如图1所示，本申请第一实施方式提供了一种光源结构1，用于发射光束至一被测目标物上进行三维感测。所述光束根据感测原理及应用场景可以为具有特定波长的光束。在本实施方式中，所述光束用于感测被测目标物的三维信息，可以为红外或近红外波长光束，波长范围为750纳米(Nanometer,nm)至1650nm。
所述光源结构1包括半导体基底10、形成在所述半导体基底10上的多个发光单元12、阳极14和阴极16。所述发光单元12为能够在电激励作用下发光的半导体结构，通过光刻、蚀刻和/或金属有机化学气相沉积等工艺形成在所述半导体基底10上。例如，所述发光单元12可以为，但不限于，垂直腔面发射激光器(Vertical Cavity Surface Emitting Laser,VCSEL)。所述阳极14和阴极16分别设置在所述半导体基底10相对的两端面上，以导入电流信号激发所述发光单元12进行发光。所述激发电流大于1mA。
可以理解的是，在其他实施方式中，所述发光单元12还可以为发光二极管(Light Emitting Diode,LED)或激光二极管(Laser Diode,LD)。因此，所述发光单元12选自VCSEL、LED及LD中的任意一种及其组合。
请一并参阅图1和图2，所述发光单元12以二维点阵的形式分布在所述半导体基底10的发光区域内，其中至少三个相邻发光单元12在半导体基底10上非等间距排布。所述全部发光单元12整体上具有相关性。
评估所述多个发光单元12所组成的排布图案的相关性通常是通过计算所述多个发光单元12之间的相关系数f n来进行，若所计算得到的相关系数f n大于或等于预设阈值，则认为所述发光单元12之间具有相关性。
所述相关系数f n的计算公式可以为但不限于归一化相关系数公式(Normalized Correlation Coefficient,NCC)，表达式如下：
Figure PCTCN2018117343-appb-000001
其中，
Figure PCTCN2018117343-appb-000002
所述R 0为按照预设条件在半导体基底10上的所有发光单元12中任意选取的发光单元12参考子区域，以所述发光单元12参考子区域R 0遍历整个半导体基底10发光区域除了R 0以外的其他部分并计算所述发光单元12参考子区域R 0与遍历过程中所经过的发光单元子区域R n的相关系数f n。所述
Figure PCTCN2018117343-appb-000003
Figure PCTCN2018117343-appb-000004
H为所考察的发光单元12子区域R n的高度，W为所考察的发光单元12子区域R n的宽度。所述选取发光单元12参考子区域R 0的预设条件为所选取的发光单元12参考子区域包括的发光单元12个数占全部发光单元12总数的比例大于或等于10％或者所选取的发光单元12参考子区域包括十个以上发光单元12。所述全部发光单元12的总数大于或等于50。
可以理解的是，所述发光单元12参考子区域R 0采用在平面直角坐标系内平移的方式进行遍历。在进行计算所述发光单元12的归一化相关系数时为了排除排布图案中所述发光单元12以外的背景区域对归一化相关系数的影响，在进行计算前以所述发光单元12的中心为原点将发光单元12的区域进行扩张，以避免当发光单元12物理尺寸较小时，因整个排布图案中背景区域比重过大，而使得经上述公式计算后的归一化相关系数无法反映出发光单元12之间的实际相关性。比如，相关性较低的发光单元12排布图案也能算出较高的归一化相关系数。经过上述对发光单元12区域的扩张后使得背景区域的比重降低，计算出来的发光单元12排布图案的归一化相关系数能够最大限度地反映发光单元12之间的实际相关性。所述每个发光单元12区域以相同的尺度进行扩张，扩张的程度应满足扩张后相邻的发光单元12区域不相互重叠。
另外，也可以在按照上述公式进行归一化相关系数计算时只取发光单元12参考子区域R 0和所遍历发光单元子区域R n内所述发光单元12所占区域内对应 的坐标，而不取背景区域对应的坐标。即，R(i,j)＝1(i,j取发光单元所占区域内对应的坐标)，以排除在计算归一化相关系数时背景区域对发光单元12实际相关性造成的影响。
可以理解的是，在其他实施方式中，所述发光单元12参考子区域R 0还可以在极坐标系中以绕坐标原点旋转的方式进行遍历。
按照上述归一化相关系数公式计算出来的归一化相关系数f n的取值范围为0≤f n≤1。若f n＝0，说明所选取的发光单元12参考子区域R 0中的发光单元12与遍历时经过的发光单元12子区域R n中的发光单元12完全错开而没有任何重合，即所述发光单元12参考子区域R 0与发光单元12子区域R n完全不相关。
若f n＝1说明所选取的发光单元12参考子区域R 0中的发光单元12与遍历时经过的发光单元12子区域R n中的发光单元12一模一样，即所述发光单元12参考子区域R 0与发光单元12子区域R n完全相关。
若0<f n<1说明所选取的发光单元12参考子区域R 0中的发光单元12与遍历时经过的发光单元12子区域R n中的发光单元12部分重合，即所述发光单元12参考子区域R 0与发光单元12子区域R n部分相关，所述归一化相关系数f n越大则说明所选取的发光单元12参考子区域R 0中的发光单元12与遍历时经过的发光单元12子区域R n中的发光单元12相互重合得越多，即所述发光单元12参考子区域R 0与发光单元12子区域R n之间的相关性越高。
若所述归一化相关系数f n≥0.3，则可认为所述发光单元12参考子区域R 0与发光单元12子区域R n相关，所述发光单元12之间具有相关性。若所述归一化相关系数f n≥0.5，则可认为所述发光单元12参考子区域R 0与发光单元12子区域R n高度相关，所述发光单元12之间具有高度相关性。
在本实施方式中，所述相关系数为归一化相关系数f n，所述预设阈值为0.3，即所述发光单元12参考子区域R 0在遍历过程中若存在所计算得出的归一化相关系数f n≥0.3，或者说所述发光单元12参考子区域R 0在遍历过程中所计算得出的归一化相关系数f n的峰值f n_max≥0.3则可认为所述发光单元12之间整体 上具有相关性。
因所述发光单元12之间具有相关性，所述发光单元12在半导体基底10上的位置能够较容易确定，降低了制作难度。
如图3所示，本申请的第二实施方式提供了一种光源结构2，其与第一实施方式中的光源结构1基本相同，主要区别在于评估所述发光单元22之间的相关性时除了考虑所述发光单元22的归一化相关系数以外还同时考虑大于或等于预设的归一化相关系数阈值的发光单元22占全部发光单元22的比例以更客观地评估所述发光单元22之间的相关性。
由此，定义出用于评估所述发光单元22之间相关性强弱的相关性强度函数
Figure PCTCN2018117343-appb-000005
其中a为相关系数大于或等于预设的相关系数阈值的发光单元22占全部发光单元22的比例，计算公式为
Figure PCTCN2018117343-appb-000006
其中R 0为按照预设条件选取的发光单元22参考子区域，以所述发光单元22参考子区域R 0遍历整个半导体基底20发光区域并计算所述发光单元22参考子区域R 0与整个半导体基底20发光区域除了R 0以外的其他部分的相关系数，假设存在N个与R 0之间的相关系数大于或等于预设相关系数阈值的发光单元22子区域，分别表示为R 1,…,R N，则所述P表示整个半导体基底20发光区域内与所述发光单元22参考子区域R 0之间的相关系数大于或等于预设相关系数阈值的所有发光单元22的集合{R 0,R 1,…,R N}，所述集合P＝{R 0,R 1,…,R N}中的发光单元22之间具有相关性。所述S为整个半导体基底20上全部发光单元的集合。所述比例可以为但不限于具有相关性的发光单元22的个数占全部发光单元22总个数的比例，或者具有相关性的发光单元22所在的区域面积占整个发光区域总面的比例进行评估，可根据实际情况进行选择。
所述P和S可以为对应发光单元12集合内的发光单元22个数。若所述发光单元22均匀分布，所述P和S也可以是对应发光单元22集合所在区域面积。可以理解的是，此处P和S的计算中针对R 0,R 1,…,R N中可能出现的重叠部分仅计算一次而不重复计算。
所述
Figure PCTCN2018117343-appb-000007
为所述集合P＝{R 0,R 1,…,R N}内所有发光单元22子区域R n(0<n≤N)与所述发光单元22参考子区域R 0之间的归一化相关系数f n的平均值，计算公式为
Figure PCTCN2018117343-appb-000008
其中f n为R n(0<n≤N)与R 0之间的归一化相关系数。
在本实施方式中，因为所述预设的相关系数阈值为0.3，即当f n≥0.3时，认为对应的发光单元22子区域R n(0<n≤N)中的发光单元12与所选取的发光单元22参考子区域R 0之间具有相关性，所述发光单元22子区域R n(0<n≤N)可运用于上述定义的相关性强度函数
Figure PCTCN2018117343-appb-000009
来评估所述半导体基底10上所有发光单元22的整体相关性。
所述a为具有相关性的发光单元22占全部发光单元22的比例，所以0≤a≤1。所述
Figure PCTCN2018117343-appb-000010
为归一化相关系数f n的平均值，所以
Figure PCTCN2018117343-appb-000011
因此，相关性强度函数
Figure PCTCN2018117343-appb-000012
所计算出来的相关性强度值F也满足取值范围0≤F≤1。在此定义若所述相关性强度值F满足0≤F<0.1，所述半导体基底10上的全部发光单元22整体上不相关。若所述相关性强度值F满足0.1≤F<0.25，所述半导体基底20上的全部发光单元22整体上弱相关。若所述相关性强度值F满足0.25≤F<0.5，所述半导体基底20上的全部发光单元22整体上具有相关性。若所述相关性强度值F满足0.5≤F≤1，所述半导体基底20上的全部发光单元22整体上强相关。
可以理解的是，对于所述半导体基底20上相同的发光单元22排布图案，所计算出来的相关性强度值F可能会随着计算过程中所选取的发光单元22参考子区域R 0的不同而变化，并不是始终保持一致的，所以在判断所述半导体基底20上全部发光单元22整体上的相关性强度时根据所有满足预设条件的发光单元22参考子区域R 0所计算出来的相关性强度值F中的最大值来进行判断。也就是说，只要存在按照预设条件选取的发光单元22参考子区域R 0，使得根据该发光单元22参考子区域R 0计算出来的相关性强度值F满足上述定义的相关性强度的对应范围即可认为所述半导体基底20上的发光单元22整体上具有对应的相关性强度。
在本实施方式中，所述半导体基底20上的全部发光单元22整体上具有相关性。所述全部发光单元22整体上的相关性强度值F的最大值F max大于或等于0.25而小于1。即存在按照预设条件选取的发光单元22参考子区域R 0所计算出来的相关性强度值F大于或等于0.25而小于1。
可以理解的是，在其他实施方式中，所述半导体基底20上的全部发光单元22整体上具有强相关性。所述全部发光单元22整体上的相关性强度值F的最大值F max大于或等于0.5而小于1。即存在按照预设条件选取的发光单元22参考子区域R 0所计算出来的相关性强度值F大于或等于0.5而小于1。
如图4所示，本申请的第三实施方式提供了一种光源结构3，其与第二实施方式中的光源结构2基本相同，主要区别在于在计算所选取的发光单元32参考子区域R 0与所遍历的半导体基底30发光区域其他部分之间的相关系数f n时考察的是所述发光单元32参考子区域R 0与所遍历的发光单元32子区域R n(0<n≤N)经过变换T之后得到的发光单元32变化子区域R′ n(0<n≤N)之间的归一化相关系数f n。所述变换T可以为但不限于仿射变换，所述仿射变换包括平移、旋转、镜像等变换。在本实施方式中，所述变换T均以平面直角坐标系为参照。
即，所述半导体基底30上原有的发光单元32子区域R n(0<n≤N)经过所述变换T后得到的发光单元32变换子区域R′ n与所选取的发光单元32参考子区域R 0之间的归一化相关系数f n满足f n≥0.3时，将所述发光单元32子区域R n(0<n≤N)的发光单元32个数和对应的归一化相关系数f n运用于上述定义的相关性强度函数
Figure PCTCN2018117343-appb-000013
来评估所述半导体基底30上所有发光单元32的整体相关性。在本实施方式中，所述归一化相关系数f n的表达式如下：
Figure PCTCN2018117343-appb-000014
其中，
Figure PCTCN2018117343-appb-000015
H为所考察的发光单元32子区域R n(0<n≤N)的高度，W为所考察的发光单 元32子区域R n(0<n≤N)的宽度。
如图5所示，本申请的第四实施方式提供了一种光源结构4，其与第一实施方式中的光源结构1基本相同，主要区别在于所述半导体基底40上的全部发光单元42可划分为多个发光单元集合420，此处的多个指的是两个及两个以上。所述发光单元集合420之间具有相关性。至少存在一个所述发光单元集合420内部的发光单元42之间不具有相关性。
所述发光单元集合420之间的相关性可以通过计算发光单元集合420之间的归一化相关系数f n来进行评估。计算公式如上所述，可以为：
Figure PCTCN2018117343-appb-000016
其中，R 0和R n分别为需要计算归一化相关性系数f n的两个发光单元集合420，
Figure PCTCN2018117343-appb-000017
H为所考察的发光单元集合420的高度，W为所考察的发光单元集合420的宽度。所述归一化相关系数f n的数值范围为0≤f n≤1，当f n<0.3时，认为所述发光单元集合420之间不具有相关性；当f n≥0.3时，认为所述发光单元集合420之间具有相关性；当f n≥0.5时，认为所述发光单元集合420之间高度相关。
在本实施方式中，所述发光单元集合420所包括的发光单元42个数大于等于10，或者所包括的发光单元42的个数占全部发光单元42总个数的比例大于或等于10％。所述发光单元集合420之间的归一化相关系数0.3≤f n<1。
可以理解的是，在其他实施方式中，所述发光单元集合420之间也可以是高度相关的，所述发光单元集合420之间的归一化相关系数0.5≤f n<1。
可以理解的是，如图6所示，若所划分的发光单元集合420和发光单元集合421的区域大小和/或所包括的发光单元42个数不一致，则可采用将其中一个所述发光单元集合420周缘向四周扩展以形成一个足够大的区域400能容纳另一个发光单元集合421围绕所述发光单元集合420的周缘平移一周。此时，将所述发光单元集合421作为一个参考子区域按照上述归一化相关系数f n的公 式在所述扩展区域400内遍历来计算整个区域400内所述发光单元42之间的归一化相关系数f n作为上述发光单元集合420和发光单元集合421之间的归一化相关系数f n。需要注意的是，在上述归一化相关系数f n的计算过程中需要将扩展区域400内除了发光单元集合420和发光单元集合421以外的坐标值都取值为0，以消除扩展部分对发光单元集合420和发光单元集合421内原本存在的发光单元42之间的归一化相关系数f n造成的影响。
需要说明的是，所述发光单元集合420之间具有相关性可以是每两个所述发光单元集合420之间相互相关，也可以是至少存在两个发光单元集合420之间具有相关性的情况而并非所有发光单元集合420彼此之间都相关。
所述发光单元集合420内部的发光单元42之间的相关性采用第一实施方式中所记载的相关性强度函数
Figure PCTCN2018117343-appb-000018
来进行评估，具体计算过程请参照上述第一实施方式中的对应内容，此处不再赘述。在本实施方式中，存在至少一个所述发光单元集合420内部的发光单元42之间不具有相关性，该发光单元集合420内的全部发光单元42之间的相关强度值F≤0.1。
如图7所示，本申请的第五实施方式提供了一种光源结构5，其与第四实施方式中的光源结构4基本相同，主要区别在于所述发光单元集合520包括第三类发光单元集合521及第四类发光单元集合522。所述第三类发光单元集合521内的发光单元52之间不具有相关性。所述第三类发光单元集合521内的发光单元52均按照相同的第一排布图案进行排布。所述第四类发光单元集合522内的发光单元之间不具有相关性。所述第四类发光单元集合522内的发光单元52均按照相同的第二排布图案进行排布，所述第二排布图案与第一排布图案不同。不同类的发光单元集合521和522之间不具有相关性。即，不同类的发光单元集合521和522之间的归一化相关系数小于0.3。
在本实施方式中，所述半导体基底50上的全部发光单元52可划分为九个发光单元集合520。其中，所述第三类发光单元集合521的个数为四个，所述第四类发光单元集合522的个数为五个。每一个所述发光单元集合520包括至 少十个所述发光单元52。可以理解的是，所述第三类发光单元集合521和第四类发光单元集合522的位置可以为矩阵排布中的任意一个格，只要满足对应个数和排布图案的要求即可。
在其他实施方式中，所述发光单元集合520的总个数不限于九个，排布方式也不限于九宫格或矩阵排布。只要满足至少有一个所述第三类发光单元集合521和至少有一个所述第四类发光单元集合522的条件即可。
如图8所示，本申请的第六实施方式提供了一种光源结构6，其与第四实施方式中的光源结构4基本相同，主要区别在于所述光源结构6包括两个发光单元集合620。每个发光单元集合620内的发光单元62之间不具有相关性。所述这两个发光单元集合620之间具有相关性。即，所述两个发光单元集合620之间的归一化相关系数0.3≤f n≤1，每个发光单元620内的发光单元62之间的归一化相关系数f n<0.3。在本实施方式中，所述每个发光单元集合620内包括至少一百个不相关的发光单元62。
如图9所示，本申请第七实施方式提供了一种光学投影模组7，用于投射具有预设图案的图案化光束至被测目标物上进行感测。所述光学投影模组7包括光束调整元件70、图案化光学元件72及上述第一至第六实施方式中的光源结构1。
所述光束调整元件70包括但不限于准直元件、扩束元件、反射元件、光学微透镜阵列组及光栅。所述光束调整元件70用于对光源结构1所发出的光束进行调整，以使其满足预设的传播特性要求，比如：传播方向、准直度、光束孔径等。所述图案化光学元件72用于将光源结构1发出的光场进行重新排布，以形成能够在被测目标物上投射出预设图案的图案化光束。所述图案化光学元件72包括但不限于衍射光学元件(Diffractive Optical Element,DOE)、光学微透镜阵列组或光栅中的一种或几种。在本实施方式中，所述衍射光学元件将所述光源结构1发出的光束进行复制后在预设角度范围内展开以形成图案化光束投射至被测目标物上。
如图10所示，本申请第八实施方式提供了一种感测装置8，其用于感测被测目标物的三维信息。所感测到的被测目标物的空间信息可被用于识别被测目标物或构建被测目标物的三维模型。
所述感测装置8包括如上述第七实施方式所提供的光学投影模组7及感测模组80。所述光学投影模组7用于投射特定光束至被测目标物上。所述感测模组80包括镜头81、图像传感器82和图像分析处理器83。所述图像传感器82通过镜头81感测所述图案化光束在被测目标物上形成的图像。所述图像分析处理器83分析所感测到的投射在被测目标物上的图像以获取被测目标物的三维信息。
在本实施方式中，所述感测装置8为感测被测目标物表面的三维信息并据此识别被测目标物身份的三维脸部识别装置。
所述感测模组80根据所感测到的图案化光束在被测目标物上投射出的预设图案的形状变化来分析出被测目标物表面的三维信息并据此对被测目标物进行脸部识别。
如图11所示，本申请第九实施方式提供一种设备9，例如手机、笔记本电脑、平板电脑、触控交互屏、门、交通工具、机器人、自动数控机床等。所述设备9包括至少一个上述第八实施方式所提供的感测装置8。所述设备9用于根据该感测装置8的感测结果来对应执行相应的功能。所述相应功能包括但不限于识别使用者身份后解锁、支付、启动预设的应用程序、避障、识别使用者脸部表情后利用深度学习技术判断使用者的情绪和健康情况中的任意一种或多种。
在本实施方式中，所述感测装置8为感测被测目标物表面的三维信息并据此识别被测目标物身份的三维脸部识别装置。所述设备9为装有所述三维脸部识别装置的手机、笔记本电脑、平板电脑、触控交互屏等电子终端，或者为门、交通工具、安检仪器、出入境闸机等涉及进出权限的设备9。
与现有技术相比，本申请所提供的光源结构1、光学投影模组7、感测装置 8及设备9因所述不同发光单元集合120的发光单元12相互之间的排布位置具有相关性，所述发光单元12在半导体基底10上的位置能够较容易地实现精准确定，降低了制作难度。
在本说明书的描述中，参考术语“一个实施方式”、“某些实施方式”、“示意性实施方式”、“示例”、“具体示例”、或“一些示例”等的描述意指结合所述实施方式或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施方式或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
以上所述仅为本申请的较佳实施方式而已，并不用以限制本申请，凡在本申请的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本申请的保护范围之内。

Claims (22)

  1. 一种光源结构，其用于发射光束至一被测目标物上进行三维感测，所述光源结构包括半导体基底及形成在所述半导体基底上的多个发光单元，所述发光单元以二维点阵的形式分布在所述半导体基底上，其中至少三个相邻发光单元在半导体基底上非等间距排布，所述发光单元之间整体上的归一化相关系数的峰值大于或等于0.3而小于1。
  2. 如权利要求1所述的光源结构，其特征在于：所述发光单元中存在参考区域，与该参考区域之间的相关系数大于或等于预设阈值的发光单元子区域所组成的集合占全部发光单元的比例值与所述集合中各个发光单元子区域对应的相关系数的平均值的乘积大于或等于0.25而小于1。
  3. 如权利要求2所述的光源结构，其特征在于：所述参考子区域包括的发光单元个数占全部发光单元总数的比例大于或等于10％。
  4. 如权利要求2所述的光源结构，其特征在于：所述参考子区域包括十个以上发光单元。
  5. 如权利要求2所述的光源结构，其特征在于：所述相关系数为归一化相关系数，所述预设的相关系数阈值为0.3。
  6. 如权利要求2所述的光源结构，其特征在于：所述发光单元子区域所组成的集合占全部发光单元的比例值为所述发光单元子区域所组成的集合内包括的发光单元个数占全部发光单元总个数的比例。
  7. 如权利要求2所述的光源结构，其特征在于：所述发光单元子区域所组成的集合占全部发光单元的比例值为所述集合内的发光单元子区域的面积之和占整个发光区域总面积的比例。
  8. 如权利要求2所述的光源结构，其特征在于：所述乘积大于或等于0.3而小于0.5。
  9. 如权利要求1或2任意一项所述的光源结构，其特征在于：所述发光单 元集合包括两类以上分别按照不同排布图案进行发光单元排布的发光单元集合，不同类的发光单元集合之间的归一化相关系数小于0.3，同一个所述发光单元集合内的发光单元之间不具有相关性。
  10. 如权利要求1或2任意一项所述的光源结构，其特征在于：所述光源结构包括两个发光单元集合，同一个所述发光单元集合内的发光单元之间的归一化相关系数小于0.3，所述两个发光单元集合之间的归一化相关系数大于等于0.3而小于或等于1。
  11. 如权利要求1或2任意一项所述的光源结构，其特征在于：所述全部发光单元的总个数大于或等于50。
  12. 如权利要求1或2任意一项所述的光源结构，其特征在于：所述发光单元选自垂直腔面发射激光器、发光二极管及激光二极管中的任意一种及其组合。
  13. 如权利要求1或2任意一项所述的光源结构，其特征在于：所述发光单元由电流信号激光发光，所述激光电流大于1mA。
  14. 一种光学投影模组，用于投射具有预设图案的图案化光束至被测目标物上进行三维感测，其包括光束调整元件、图案化光学元件及如权利要求1至13中任意一项所述的光源结构，所述光束调整元件用于对光源结构所发出的光束进行调整以使其满足预设的传播特性要求，所述图案化光学元件用于将光源结构发出的光场进行重新排布以形成具有预设图案的图案化光束。
  15. 如权利要求14所述的光学投影模组，其特征在于：所述光学投影模组还包括驱动电路，所述驱动电路提供电流以驱动所述发光单元进行发光。
  16. 如权利要求14所述的光学投影模组，其特征在于：所述光束调整元件包括准直元件、扩束元件、反射元件、光学微透镜阵列组或光栅中的一种或几种。
  17. 如权利要求14所述的光学投影模组，其特征在于：所述图案化光学元 件包括衍射光学元件、光学微透镜阵列或光栅中的一种或几种。
  18. 一种感测装置，其用于感测被测目标物的三维信息，其包括感测模组及如权利要求14至17中任意一项所述的光学投影模组，所述感测模组用于感测所述光学模组在被测目标物上投射的预设图案并通过分析所述预设图案的图像获取被测标的物的三维信息。
  19. 如权利要求18所述的感测装置，其特征在于：所述感测模组包括镜头、图像传感器和图像分析处理器，所述图像传感器通过镜头感测所述图案化光束在被测目标物上形成的图像，所述图像分析处理器分析所感测到的投射在被测目标物上的图像以获取被测目标物的三维信息。
  20. 如权利要求18所述的感测装置，其特征在于：所述感测装置为用于感测被测目标物表面的三维信息并据此识别被测目标物身份的三维脸部识别装置。
  21. 一种设备，包括权利要求18至20中任意一项所述的感测装置，所述设备根据所述感测装置所感测到的被测目标物的三维信息来执行相应功能。
  22. 如权利要求21所述的设备，其特征在于：所述感测装置为用于感测被测目标物表面的三维信息的三维脸部识别装置，所述设备为手机，用于根据三维脸部识别装置所感测到的被测目标物脸部的三维信息来识别被测目标物的身份。
PCT/CN2018/117343 2018-11-24 2018-11-24 一种光源结构、光学投影模组、感测装置及设备 WO2020103166A1 (zh)

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