WO2020098722A1 - 一种全彩化显示模块及其制作方法 - Google Patents

一种全彩化显示模块及其制作方法 Download PDF

Info

Publication number
WO2020098722A1
WO2020098722A1 PCT/CN2019/118204 CN2019118204W WO2020098722A1 WO 2020098722 A1 WO2020098722 A1 WO 2020098722A1 CN 2019118204 W CN2019118204 W CN 2019118204W WO 2020098722 A1 WO2020098722 A1 WO 2020098722A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
full
display module
pixel units
color display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/118204
Other languages
English (en)
French (fr)
Inventor
欧建兵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/648,246 priority Critical patent/US11223031B2/en
Publication of WO2020098722A1 publication Critical patent/WO2020098722A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to the technical field of full-color display, in particular to the technical field of liquid crystal display of a full-color display module with a microcavity effect.
  • AMOLED Active Matrix Organic Light Emitting Diode
  • the current full-color display structure of AMOLED is to use a juxtaposition method of three primary colors of red, green and blue to form a thin film transistor (Thin Film Transistor, hereinafter referred to as TFT) layer 20 on a glass substrate 10;
  • TFT Thin Film Transistor
  • the anode layer 30 corresponding to the pixel structures of three colors of red, green, and blue respectively;
  • the red organic light emitting layer 40, the green organic light emitting layer 42, and the blue organic light emitting layer 44 are formed on the corresponding anode layer 30;
  • a cathode layer 50 is formed on the light-emitting layer 40, the green organic light-emitting layer 42, and the blue organic light-emitting layer 44.
  • the existing process for fabricating the three-color pixel structure is to use vapor deposition to form a film, that is, when vapor deposition of a group of organic materials of red pixels, green pixels, and blue pixels, through high-precision alignment, a metal mask is used
  • the board covers the other two sub-pixels, and the material is heated and evaporated to the designated position. According to this method, the pixel structures of other colors are evaporated separately.
  • the purpose of the present disclosure is to provide a full-color display module with a microcavity effect and a manufacturing method thereof.
  • the three primary colors of green and blue light strengthen the light of a specific wavelength, narrow its electroluminescence spectrum, and improve color purity.
  • the full-color display module includes: a glass substrate; a thin film transistor (Thin Film Transistor (TFT) layer, which is provided on the glass substrate; an anode layer is formed on the TFT layer, and the anode layer corresponds to each pixel unit and is electrically connected to the TFT layer to match the TFT layer for the corresponding
  • the drive control of the pixel unit of the white light emitting layer is formed on the corresponding anode layer; the cathode layer is formed on the white light emitting layer; the resonant cavity structure is formed on the cathode layer, the resonant cavity structure is included in the A first transparent organic layer, a first semi-reflective metal layer, a second transparent organic layer, and a second semi-reflective metal layer that are sequentially formed on the cathode layer; wherein, the electric power of pixel units of different primary colors in the resonant cavity structure
  • the hole transport layer is included in the hole transport layer
  • the anode layer is a fully reflective metal layer
  • the cathode layer is a semi-reflective metal layer
  • the white light emitting layer is a stacked structure combined with different color structures.
  • the first semi-reflective metal layer, the second semi-reflective metal layer and the cathode layer are made of the same material.
  • the pixel units may be arranged in such a manner that pixel units corresponding to various colors have the same number and are evenly distributed, or may be pixel units corresponding to a specific color to The pixel units are arranged in different numbers.
  • the size or opening width of the pixel unit is made in such a way that the pixel units of various colors have the same size or opening width, or alternatively, the size or opening width of the pixel unit is Pixel units corresponding to a specific color are manufactured in a manner that has different sizes or different opening widths from pixel units of other colors.
  • Another embodiment of the present disclosure provides a method for manufacturing a full-color display module with a microcavity effect.
  • the manufacturing method includes the following steps:
  • Step S1 forming a TFT layer on the glass substrate
  • Step S2 separately forming an anode layer corresponding to each pixel unit on the TFT layer, the anode layer corresponding to each pixel unit electrically connected to the TFT layer to cooperate with the TFT layer to drive the corresponding pixel unit control;
  • Step S3 forming a white light emitting layer on the corresponding anode layer, wherein the white light emitting layer may use a common metal mask (Common Metal Mask (CMM) is used as a mask for the vapor deposition process;
  • CMS Common Metal Mask
  • Step S4 forming a cathode layer on the white light emitting layer
  • Step S5 forming a resonant cavity structure on the cathode layer, the resonant cavity structure on the cathode layer is a first transparent organic layer, a first semi-reflective metal layer, a second transparent organic layer and a Two semi-reflective metal layers;
  • the hole transmission layer of the pixel units of different primary colors in the resonant cavity structure has different thicknesses to achieve the luminous effect of the desired color light.
  • the thickness of the hole transmission layer of red light is about 60 nm, and the hole transmission of green light
  • the thickness of the layer is about 50 nm, and the thickness of the hole transport layer of blue light is about 30 nm.
  • step S5 further includes the following steps:
  • Step S51 First use the CMM as a mask for the vapor deposition process to make the transparent organic layer with the minimum thickness required for the corresponding colored light;
  • Step S52 A fine metal mask (FMM) is used as a mask for the vapor deposition process to make a transparent organic layer required for other colored light.
  • FMM fine metal mask
  • the beneficial effects brought by the disclosed embodiments are: the full-color display module with the micro-cavity effect provided by the disclosed embodiments and a method for manufacturing the same , Green, blue three primary colors of light, so that the specific wavelength of light is strengthened, narrowing its electroluminescence spectrum to improve color purity, and can effectively avoid color mixing errors, pixel defects and other problems, which is conducive to the application of display technology.
  • FIG. 1 is a schematic structural diagram of an AMOLED display module in the prior art.
  • FIG. 2 is a schematic structural diagram of a full-color display module with a micro-cavity effect provided by an embodiment of the disclosure.
  • FIG. 3 is a detailed schematic diagram of the structure of the resonant cavity in FIG. 2.
  • FIG. 2 is a schematic structural diagram of a full-color display module using a microcavity effect provided by an embodiment of the disclosure.
  • the full-color display module includes a glass substrate 12, a thin film transistor (Thin Film Transistor (hereinafter abbreviated as TFT) layer 22, anode layer 32, cathode layer 52, white light emitting layer 60, and resonant cavity structure 70.
  • TFT Thin Film Transistor
  • the TFT layer 22 is formed on the glass substrate 12.
  • the anode layer 32 corresponding to each pixel unit is formed on the TFT layer 22 respectively.
  • the anode layer 32 is electrically connected to the TFT layer 22 to cooperate with the TFT layer 22 to drive and control each pixel unit.
  • the white light emitting layer 60 is formed on the corresponding anode layer 32, the cathode layer 52 is formed on the white light emitting layer 60, and the cathode layer 52 may cover all of the white light emitting layer 60.
  • the anode layer 32 is a fully reflective metal layer, preferably indium tin oxide (Indium Tin Oxide) Tin oxide (hereinafter referred to as ITO) layer or silver (Ag) material
  • the cathode layer 52 is a semi-reflective metal layer, preferably made of magnesium (Mg) or silver material.
  • the manufacturing process of the white light emitting layer 60 may use a common metal mask (Common Metal Mask, hereinafter referred to as CMM) as a vapor deposition process mask plate.
  • CMM Common Metal Mask
  • the white light emitting layer 60 may use a stack structure, for example: yellow The combination of light and blue light, or a stacked structure of red light, green light and blue light, to achieve the effect of emitting white light.
  • the white light emitting layer 60 may be composed of an organic light emitting diode (Organic Light Emitting Diode, hereinafter referred to as OLED) device, or may be composed of other devices that emit white light, such as a quantum dot device.
  • OLED Organic Light Emitting Diode
  • FIG. 3 is a detailed schematic diagram of the resonant cavity structure 70 in FIG. 2.
  • the resonant cavity structure 70 forms a first transparent organic layer 72 and a first semi-reflective metal layer 76 on the anode layer 32, the white light emitting layer 60 and the cathode layer 52 in this order , A second transparent organic layer 74 and a second semi-reflective metal layer 78.
  • the first transparent organic layer 72 and the second transparent organic layer 74 are thickness adjustment layers. By adjusting the thickness of the transparent organic layer, the light of a specific wavelength is strengthened.
  • the first semi-reflective metal layer 76 and the second semi-reflective metal layer 78 are preferably made of the same material as the cathode layer 52.
  • the fabrication of the partial structure of the resonant cavity structure 70 requires more precise control to produce the layered structure with the required precise thickness, so a fine metal mask (Fine Metal Mask (hereinafter referred to as FMM) is produced as a mask for the vapor deposition process.
  • FMM Fe Metal Mask
  • the thickness of the transparent organic layer required is also inconsistent, and because the cost of the FMM process is higher than the CMM process, in order to optimize the process of the cavity structure 70, reduce the FMM The number of times of the process is used to reduce the cost of the process.
  • the CMM When manufacturing the resonant cavity structure 70, the CMM can be used as a vapor deposition process mask to make the transparent organic layer with the minimum thickness required for the corresponding color light, and then the FMM can be used as the vapor deposition process mask
  • the transparent organic layer required for the other two colored lights by the membrane plate can reduce the number of FMM required from the total process from 6 to 4 sheets.
  • the transparent organic layer is only a thickness adjustment layer, not a light-emitting functional layer, there is no interface problem.
  • the principle of the Microcavity Effect is to generate optical interference within the cavity structure, so that the photon density of different energy states is redistributed, so that only light of a specific wavelength can be at a specific angle after conforming to the cavity mode After being emitted, the light of a specific specific wavelength is strengthened, and part of the light is weakened. After determining the anode and cathode materials, adjust the optical wavelength to adjust the resonance wavelength. At present, the optical length is mainly achieved by adjusting the thickness between the two reflecting surfaces.
  • Organic light-emitting components with a micro-cavity effect structure can narrow its electroluminescence spectrum, thereby improving color purity and being beneficial to the application of display technology.
  • the disclosed embodiment utilizes the microcavity effect of white light passing through the resonant cavity structure 70 to emit three primary colors of red, green, and blue.
  • the white light emitting layer 60 emits multi-wavelength white light, and white light enters the resonant cavity structure 70 of each pixel unit from the cathode layer 52 according to different pixel units
  • the thickness of the transparent organic layer to filter out the three primary colors of red, green and blue.
  • the cavity transmission layer of the pixel unit of different primary colors of the resonant cavity structure 70 has different thicknesses to achieve the luminous effect of the desired color light.
  • the thickness of the hole transmission layer of red light is about 60 nm (the peak of the red light spectrum is about 604 nm ),
  • the hole transport layer thickness of green light is about 50nm (reaching the peak of green light spectrum is about 528nm), the hole transport layer thickness of blue light is about 30nm (reaching the peak of green light spectrum is about 468nm).
  • the number of pixel units of the three primary colors of red, green, and blue in the disclosed embodiment may be set in such a manner that the colors have the same amount and are evenly distributed, or may be different from pixel units of other colors for pixel units of a specific color Set by quantity.
  • the size or opening width of the pixel units of the three primary colors of red, green and blue in the disclosed embodiment may be made in a manner that the colors have the same size or opening width, or may be a pixel unit of a specific color to match other colors
  • the pixel units have different sizes or different opening widths.
  • Another embodiment of the present disclosure provides a method for manufacturing a full-color display module with a microcavity effect.
  • the manufacturing method includes the following steps:
  • Step S1 forming a TFT layer on the glass substrate
  • Step S2 separately forming an anode layer corresponding to each pixel unit on the TFT layer, the anode layer corresponding to each pixel unit electrically connected to the TFT layer to cooperate with the TFT layer to drive the corresponding pixel unit control;
  • Step S3 a white light-emitting layer is formed on the corresponding anode layer, wherein the white light-emitting layer can be manufactured by using a CMM as a mask of a vapor deposition process;
  • Step S4 a cathode layer is formed on the white light emitting layer
  • Step S5 a resonant cavity structure is formed on the cathode layer, and the resonant cavity structure on the cathode layer is a first transparent organic layer, a first semi-reflective metal layer, a second transparent organic layer and Two semi-reflective metal layer.
  • step S5 the following steps are further included:
  • Step S51 First use the CMM as a mask for the vapor deposition process to make the transparent organic layer with the minimum thickness required for the corresponding colored light;
  • Step S52 The FMM is used as a mask for the vapor deposition process to make a transparent organic layer required for other colored light.
  • the anode layer is a fully reflective metal layer, preferably made of an ITO layer or silver material, and the cathode layer is a semi-reflective metal
  • the layer is preferably made of magnesium or silver material.
  • the white light emitting layer may adopt a stacked structure, for example, a combination of yellow light and blue light, or red light, green light and blue light may be used Combined stacking structure to achieve the effect of emitting white light.
  • the first semi-reflective metal layer and the second semi-reflective metal layer are preferably made of the same material as the cathode layer Make.
  • the number of pixel units corresponding to the three primary colors of red, green, and blue light can be set in a manner that the colors have the same number and are evenly distributed.
  • the pixel units of a specific color may be arranged in a different number from the pixel units of other colors.
  • the size or opening width of the pixel unit corresponding to the three primary colors of red, green, and blue light may be the same size or opening width in various colors It can also be produced by a pixel unit of a specific color with a different size or a different opening width than a pixel unit of another color.
  • the full-color display module with micro-cavity effect and the manufacturing method thereof use the method of causing white light to generate micro-cavity oscillation effect through the resonant cavity structure to emit three primary colors of red, green and blue to make specific
  • the wavelength of light is strengthened, narrowing its electroluminescence spectrum to improve color purity, and can effectively avoid problems such as color mixing errors and pixel defects, which is beneficial to the application of display technology.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本揭示提供一种具有微腔效应的全彩化显示模块，所述全彩化显示模块包括玻璃基板、薄膜晶体管层、阳极层、阴极层、白光发光层以及共振腔结构，所述共振腔结构在所述阴极层上依序形成第一透明有机层、第一半反射金属层、第二透明有机层以及第二半反射金属层，通过调整所述透明有机层的厚度来实现特定波长光的加强。

Description

一种全彩化显示模块及其制作方法 技术领域
本揭示涉及全彩化显示技术领域，特别是涉及一种具有微腔效应的全彩化显示模块液晶显示技术领域。
 背景技术
相较于传统液晶显示(Liquid Crystal Display)屏幕，有源矩阵有机发光二极管(Active Matrix Organic Light Emitting Diode,以下简称AMOLED)屏幕具有响应速度快、自发光、广视角、显示效果好以及较低电能消耗等优点。因为上述优点，AMOLED屏幕已广泛在智能手机上采用。
如图1所示,目前AMOLED的全彩化显示结构是采用红绿蓝三原色并置法，在玻璃基板10上制作薄膜晶体管(Thin Film Transistor,以下简称TFT)层20；在TFT层20上制作分别对应于红色、绿色、蓝色三种颜色像素结构的阳极层30；在对应的阳极层30上分别形成红色有机发光层40、绿色有机发光层42、蓝色有机发光层44；在红色有机发光层40、绿色有机发光层42、蓝色有机发光层44上形成阴极层50。而制作三种颜色像素结构的现有工艺是采用蒸镀成膜的方式，即在蒸镀红色像素、绿色像素、蓝色像素其中一组有机材料时，通过高精度对位，利用金属掩膜板将另外两个子像素遮住，将该材料加热蒸镀到指定位置。依此方法，再分别蒸镀其他颜色的像素结构。
然而，采用现有方法进行蒸镀时，经常会发生由于掩膜板制作精度不够或对位精度不够等因素导致的红色像素、绿色像素、蓝色像素材料蒸镀位置偏移的情况发生，继而产生混色误差、像素残缺等问题。因此，需要提出一种新的全彩化显示技术以解决现有技术的缺陷。
 技术问题
为解决上述现有技术的问题，本揭示的目的在于提供一种具有微腔效应的全彩化显示模块及其制作方法，其利用使白光通过共振腔结构产生微腔振荡效应的方式发出红色、绿色、蓝色三原色光，使得特定特定波长的光被加强，窄化其电致发光光谱进而提高色纯度。
 技术解决方案
为达成上述目的，本揭示提供一种具有微腔效应的全彩化显示模块，所述全彩化显示模块包括：玻璃基板；薄膜晶体管(Thin Film Transistor，TFT)层，设置于所述玻璃基板上；阳极层制作于所述TFT层上，所述阳极层对应于各个像素单元与所述TFT层电连接以配合所述TFT层对于所对应的像素单位的驱动控制；白光发光层形成于对应的所述阳极层上；阴极层形成于所述白光发光层上；共振腔结构形成于所述阴极层上，所述共振腔结构包括在所述阴极层上依序形成的第一透明有机层、第一半反射金属层、第二透明有机层以及第二半反射金属层；其中，所述共振腔结构中不同原色光的像素单元的电洞传输层以不同厚度来达成所需颜色光的发光效果，红光的电洞传输层厚度约为60nm，绿光的电洞传输层厚度约为50nm，蓝光的电洞传输层厚度约为30nm。
本揭示的实施例中，所述阳极层为全反射金属层，所述阴极层为半反射金属层。
本揭示的实施例中，所述白光发光层为以不同颜色结构组合的堆叠结构。
本揭示的实施例中，所述第一半反射金属层、所述第二半反射金属层与所述阴极层为相同材料制成。
本揭示的实施例中，所述像素单元可以是以对应于各种颜色的像素单元具有相同数量且平均分布的方式设置，或者，也可以是以对应于特定颜色的像素单元以与其他颜色的像素单元具有不同数量的方式设置。
本揭示的实施例中，所述像素单元的尺寸或开口宽度是以各种颜色的像素单元具有相同尺寸或开口宽度的方式制作，或者，也可以是以所述像素单元的尺寸或开口宽度是以对应于特定颜色的像素单元以与其他颜色的像素单元具有不同尺寸或不同开口宽度的方式制作。
本揭示的另一实施例提供一种具有微腔效应的全彩化显示模块的制作方法，所述制作方法包括以下步骤：
步骤S1：在玻璃基板上制作TFT层；
步骤S2：在所述TFT层上分别制作对应于各个像素单元的阳极层，所述阳极层对应于各个像素单元与所述TFT层电连接以配合所述TFT层对于所对应的像素单位的驱动控制；
步骤S3：形成白光发光层于对应的所述阳极层上，其中所述白光发光层可采用共用金属掩膜(Common Metal Mask，CMM)作为蒸镀制程掩膜板进行制作；
步骤S4：形成阴极层于所述白光发光层上；以及
步骤S5：形成共振腔结构于所述阴极层的上面，所述共振腔结构在所述阴极层的上面依序为第一透明有机层、第一半反射金属层、第二透明有机层以及第二半反射金属层；
其中，所述共振腔结构中不同原色光的像素单元的电洞传输层以不同厚度来达成所需颜色光的发光效果，红光的电洞传输层厚度约为60nm，绿光的电洞传输层厚度约为50nm，蓝光的电洞传输层厚度约为30nm。
在本揭示的另一实施例中，所述步骤S5还包括以下步骤：
步驟S51：先使用CMM作为蒸镀制程掩膜板制作对应色光所需厚度最小的透明有机层；以及
步驟S52：再使用精细金属掩膜板(Fine Metal Mask，以下简称FMM)作为蒸镀制程掩膜板制作其他色光所需的透明有机层。
 有益效果
本揭示实施例带来的有益效果为：本揭示实施例所提供的具有微腔效应的全彩化显示模块及其制作方法，其利用使白光通過共振腔结构产生微腔振荡效应的方式发出红色、绿色、蓝色三原色光，使得特定特定波长的光被加强，窄化其电致发光光谱进而提高色纯度，并且可以有效避免混色误差、像素残缺等问题发生，有利于显示技术的应用。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术的AMOLED显示模块的结构示意图。
图2为本揭示实施例提供的一种具有微腔效应的全彩化显示模块的结构示意图。
图3为图2中的共振腔结构的详细结构示意图。
 本发明的实施方式
在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本揭示的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本揭示提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本揭示所描述的实施例可具有其他符合本揭示构思的技术方案结合或变化。
以下各实施例的说明是参考附加的图式，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下 ]、[前]、 [后]、 [左]、 [右]、 [内]、 [外]、 [侧面 ]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本发明。
图2为本揭示实施例提供的一种采用微腔效应的全彩化显示模块的结构示意图。如图2所示，全彩化显示模块包括玻璃基板12、薄膜晶体管(Thin Film Transistor,以下简称TFT)层22、阳极层32、阴极层52、白光发光层60以及共振腔结构70。
在所述玻璃基板12上制作所述TFT层22。在所述TFT层22上分别制作对应于各个像素单元的所述阳极层32，所述阳极层32与所述TFT层22电连接以配合所述TFT层22对各个像素单位的驱动控制。所述白光发光层60形成于对应的所述阳极层32上，所述阴极层52形成于所述白光发光层60上，所述阴极层52可覆盖全部所述白光发光层60。当所述TFT层22施加于各个像素单位所对应的所述阳极层32的驱动电压达到可点亮所述白光发光层60的最小点亮电压值时，所述阳极层32与所述阴极层52之间的电压差值可点亮所述白光发光层60。所述阳极层32为全反射金属层，优选为采用氧化铟锡(Indium Tin oxide，以下简称ITO)层或银(Ag)材料制成，所述阴极层52为半反射金属层，优选为采用镁(Mg)或银材料制成。
制作所述白光发光层60的制程可采用共用金属掩膜(Common Metal Mask，以下简称CMM)作为蒸镀制程掩膜板进行制作，所述白光发光层60可采用堆叠结构，例如：可采用黄光与蓝光结合，或是红光、绿光与蓝光结合的堆叠结构，以实现发出白光的效果。所述白光发光层60可以是以有机发光二极管(Organic Light Emitting Diode,以下简称OLED)器件组成，也可以采用其他可发出白光的器件组成，例如量子点器件。
图3为图2中的所述共振腔结构70的详细结构示意图。如图3所示，所述共振腔结构70在所述阳极层32、所述白光发光层60及所述阴极层52的上面依序形成第一透明有机层72、第一半反射金属层76、第二透明有机层74以及第二半反射金属层78。所述第一透明有机层72与所述第二透明有机层74为厚度调整层，通过调整所述透明有机层的厚度来实现特定波长光的加强。所述第一半反射金属层76与所述第二半反射金属层78优选为采用和所述阴极层52相同的材料来制作。
为了实现微腔效应的光学效果，所述共振腔结构70的部分结构的制作需要较为精确的控制，以制作出所需精确厚度的层状结构，因此需要以精细金属掩膜板(Fine Metal Mask，以下简称FMM)作为蒸镀制程掩膜板进行制作。由于红、绿、蓝三种色光的波长存在明显差异，因此所需要的透明有机层的厚度也不一致，并且，由于FMM制程的成本高于CMM制程，为了优化共振腔结构70的制程，减少FMM制程的使用次数以降低制程成本，在制作所述共振腔结构70时，可先使用CMM作为蒸镀制程掩膜板制作对应色光所需厚度最小的透明有机层，再使用FMM作为蒸镀制程掩膜板制作另外两种色光所需的透明有机层，可使总制程所需FMM的数量由6张缩减为4张。另外，由于透明有机层仅为厚度调整层，并非发光功能层，因此不会存在界面问题。
微腔效应(Microcavity Effect)的原理为在共振腔结构内部产生光学的干涉现象，使不同能态的光子密度被重新分配，使得只有特定波长的光在符合共振腔模式后，得以在特定的角度射出，使得特定特定波长的光被加强，一部分光被消弱。当确定阳极、阴极材料后，通过调整光学长度，来调整共振波长。而光学长度目前主要是通过调整两个反射面之间的厚度来实现。具备微腔效应结构的有机发光组件可以窄化其电致发光光谱，进而提高色纯度而有利于显示技术的应用。
本揭示实施例利用白光通过所述共振腔结构70而产生的微腔效应来发出红、绿、蓝三原色光。当所述阳极层32及所述阴极层52通电后，所述白光发光层60发出多波长的白光，白光从所述阴极层52进入各像素单元的所述共振腔结构70，根据不同像素单元的透明有机层的厚度，来实现红、绿、蓝三原色光的滤出。所述共振腔结构70不同原色光的像素单元的电洞传输层以不同厚度来达成所需颜色光的发光效果，红光的电洞传输层厚度约为60nm（达到红光频谱峰值约为604nm），绿光的电洞传输层厚度约为50nm（达到绿光频谱峰值约为528nm），蓝光的电洞传输层厚度约为30nm（达到绿光频谱峰值约为468nm）。本揭示实施例中的红、绿、蓝三原色光的像素单元数量可以是以各种颜色具有相同数量且平均分布的方式设置，也可以是针对特定颜色的像素单元以与其他颜色的像素单元不同数量的方式设置。本揭示实施例中的红、绿、蓝三原色光的像素单元的尺寸或开口宽度可以是以各种颜色具有相同尺寸或开口宽度的方式制作，也可以是针对特定颜色的像素单元以与其他颜色的像素单元具有不同尺寸或不同开口宽度的方式制作。
本揭示另一实施例提供一种具有微腔效应的全彩化显示模块的制作方法，所述制作方法包括以下步骤：
步骤S1：在玻璃基板上制作TFT层；
步骤S2：在所述TFT层上分别制作对应于各个像素单元的阳极层，所述阳极层对应于各个像素单元与所述TFT层电连接以配合所述TFT层对于所对应的像素单位的驱动控制；
步骤S3：白光发光层形成于对应的所述阳极层上，其中所述白光发光层可采用CMM作为蒸镀制程掩膜板进行制作；
步骤S4：阴极层形成于所述白光发光层上；
步骤S5：共振腔结构形成于所述阴极层的上面，所述共振腔结构在所述阴极层的上面依序为第一透明有机层、第一半反射金属层、第二透明有机层以及第二半反射金属层。
在步骤S5中，进一步包括以下步骤：
步驟S51：先使用CMM作为蒸镀制程掩膜板制作对应色光所需厚度最小的透明有机层；
步驟S52：再使用FMM作为蒸镀制程掩膜板制作其他色光所需的透明有机层。
本揭示实施例提供的具有微腔效应的全彩化显示模块的制作方法中，所述阳极层为全反射金属层，优选为采用ITO层或银材料制成，所述阴极层为半反射金属层，优选为采用镁或银材料制成。
本揭示实施例提供的具有微腔效应的全彩化显示模块的制作方法中，所述白光发光层可采用堆叠结构，例如：可采用黄光与蓝光结合，或是红光、绿光与蓝光结合的堆叠结构，以实现发出白光的效果。
本揭示实施例提供的具有微腔效应的全彩化显示模块的制作方法中，所述第一半反射金属层与所述第二半反射金属层优选为采用和所述阴极层相同的材料来制作。
本揭示实施例提供的具有微腔效应的全彩化显示模块的制作方法中，对应于红、绿、蓝三原色光的像素单元数量可以是以各种颜色具有相同数量且平均分布的方式设置，也可以是针对特定颜色的像素单元以与其他颜色的像素单元不同数量的方式设置。
本揭示实施例提供的具有微腔效应的全彩化显示模块的制作方法中，对应于红、绿、蓝三原色光的像素单元的尺寸或开口宽度可以是以各种颜色具有相同尺寸或开口宽度的方式制作，也可以是针对特定颜色的像素单元以与其他颜色的像素单元具有不同尺寸或不同开口宽度的方式制作。
本揭示实施例所提供的具有微腔效应的全彩化显示模块及其制作方法，其利用使白光通過共振腔结构产生微腔振荡效应的方式发出红色、绿色、蓝色三原色光，使得特定特定波长的光被加强，窄化其电致发光光谱进而提高色纯度，并且可以有效避免混色误差、像素残缺等问题发生，有利于显示技术的应用。
综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本揭示的精神和范围内，所衍生的各种更动与变化，皆涵盖于本发明以权利要求界定的保护范围内。

Claims (20)

  1. 一种具有微腔效应的全彩化显示模块，所述全彩化显示模块包括：
    玻璃基板；
    薄膜晶体管(Thin Film Transistor，TFT)层，设置于所述玻璃基板上；
    阳极层制作于所述TFT层上，所述阳极层对应于各个像素单元与所述TFT层电连接以配合所述TFT层对于所对应的像素单位的驱动控制；
    白光发光层形成于对应的所述阳极层上；
    阴极层形成于所述白光发光层上；以及
    共振腔结构形成于所述阴极层上；
    其中，所述共振腔结构中不同原色光的像素单元的电洞传输层以不同厚度来达成所需颜色光的发光效果，红光的电洞传输层厚度约为60nm，绿光的电洞传输层厚度约为50nm，蓝光的电洞传输层厚度约为30nm。
  2. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述阳极层为全反射金属层，所述阴极层为半反射金属层。
  3. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述共振腔结构还包括在所述阴极层上依序形成的第一透明有机层、第一半反射金属层、第二透明有机层以及第二半反射金属层。
  4. 如权利要求3所述的具有微腔效应的全彩化显示模块，其中所述第一半反射金属层、所述第二半反射金属层与所述阴极层为相同材料制成。
  5. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述白光发光层为以不同颜色结构组合的堆叠结构。
  6. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述白光发光层是采用共用金属掩膜(Common Metal Mask，CMM)作为蒸镀制程掩膜板进行制作。
  7. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述像素单元是以对应于各种颜色的像素单元具有相同数量且平均分布的方式设置。
  8. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述像素单元是以对应于特定颜色的像素单元以与其他颜色的像素单元具有不同数量的方式设置。
  9. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述像素单元的尺寸或开口宽度是以各种颜色的像素单元具有相同尺寸或开口宽度的方式制作。
  10. 如权利要求1所述的具有微腔效应的全彩化显示模块，其中所述像素单元的尺寸或开口宽度是以对应于特定颜色的像素单元以与其他颜色的像素单元具有不同尺寸或不同开口宽度的方式制作。
  11. 一种具有微腔效应的全彩化显示模块的制作方法，所述制作方法包括以下步骤：
    步骤S1：在玻璃基板上制作TFT层；
    步骤S2：在所述TFT层上分别制作对应于各个像素单元的阳极层，所述阳极层对应于各个像素单元与所述TFT层电连接以配合所述TFT层对于所对应的像素单位的驱动控制；
    步骤S3：形成白光发光层于对应的所述阳极层上；
    步骤S4：形成阴极层于所述白光发光层上；以及
    步骤S5：形成共振腔结构于所述阴极层的上面，所述共振腔结构在所述阴极层的上面依序为第一透明有机层、第一半反射金属层、第二透明有机层以及第二半反射金属层；
    其中，所述共振腔结构中不同原色光的像素单元的电洞传输层以不同厚度来达成所需颜色光的发光效果，红光的电洞传输层厚度约为60nm，绿光的电洞传输层厚度约为50nm，蓝光的电洞传输层厚度约为30nm。
  12. 如权利要求11所述的制作方法，其中所述步骤S3还包括以下步骤：所述白光发光层是采用共用金属掩膜(Common Metal Mask，CMM)作为蒸镀制程掩膜板进行制作。
  13. 如权利要求11所述的制作方法，其中所述步骤S5还包括以下步骤：
    步驟S51：先使用CMM作为蒸镀制程掩膜板制作对应色光所需厚度最小的透明有机层；以及
    步驟S52：再使用精细金属掩膜板(Fine Metal Mask，FMM)作为蒸镀制程掩膜板制作其他色光所需的透明有机层。
  14. 如权利要求11所述的制作方法，其中所述阳极层为全反射金属层，所述阴极层为半反射金属层。
  15. 如权利要求11所述的制作方法，其中所述第一半反射金属层、所述第二半反射金属层与所述阴极层为相同材料制成。
  16. 如权利要求11所述的制作方法，其中所述白光发光层为以不同颜色结构组合的堆叠结构。
  17. 如权利要求11所述的制作方法，其中所述像素单元是以对应于各种颜色的像素单元具有相同数量且平均分布的方式设置。
  18. 如权利要求11所述的制作方法，其中所述像素单元是以对应于特定颜色的像素单元以与其他颜色的像素单元具有不同数量的方式设置。
  19. 如权利要求11所述的制作方法，其中所述像素单元的尺寸或开口宽度是以各种颜色的像素单元具有相同尺寸或开口宽度的方式制作。
  20. 如权利要求11所述的制作方法，其中所述像素单元的尺寸或开口宽度是以对应于特定颜色的像素单元以与其他颜色的像素单元具有不同尺寸或不同开口宽度的方式制作。
PCT/CN2019/118204 2018-11-15 2019-11-13 一种全彩化显示模块及其制作方法 Ceased WO2020098722A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/648,246 US11223031B2 (en) 2018-11-15 2019-11-13 Full color display module and manufacturing method of same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811361575.0 2018-11-15
CN201811361575.0A CN109638037B (zh) 2018-11-15 2018-11-15 一种全彩化显示模块及其制作方法

Publications (1)

Publication Number Publication Date
WO2020098722A1 true WO2020098722A1 (zh) 2020-05-22

Family

ID=66068087

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/118204 Ceased WO2020098722A1 (zh) 2018-11-15 2019-11-13 一种全彩化显示模块及其制作方法

Country Status (3)

Country Link
US (1) US11223031B2 (zh)
CN (1) CN109638037B (zh)
WO (1) WO2020098722A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109638037B (zh) * 2018-11-15 2021-04-02 武汉华星光电半导体显示技术有限公司 一种全彩化显示模块及其制作方法
US11980046B2 (en) * 2020-05-27 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device
CN113629114B (zh) * 2021-07-30 2023-02-03 深圳市华星光电半导体显示技术有限公司 显示面板
KR20250102716A (ko) * 2023-12-28 2025-07-07 엘지디스플레이 주식회사 유기발광 표시장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104904030A (zh) * 2013-01-04 2015-09-09 乐金显示有限公司 Oled微腔结构及其制造方法
US20170250231A1 (en) * 2016-02-26 2017-08-31 Japan Display Inc. Display device
CN107958963A (zh) * 2017-12-14 2018-04-24 安徽熙泰智能科技有限公司 全彩化oled微显示器件及其制备方法
CN109638037A (zh) * 2018-11-15 2019-04-16 武汉华星光电半导体显示技术有限公司 一种全彩化显示模块及其制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796615B1 (ko) * 2006-12-22 2008-01-22 삼성에스디아이 주식회사 유기전계발광소자 및 그의 제조방법
KR101434361B1 (ko) * 2007-10-16 2014-08-26 삼성디스플레이 주식회사 백색 유기 전계 발광소자 및 이를 이용한 컬러 디스플레이장치
KR101520489B1 (ko) * 2008-09-30 2015-05-15 엘지디스플레이 주식회사 유기발광다이오드 표시소자와 그 제조방법
KR101058109B1 (ko) * 2009-09-15 2011-08-24 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치
US8957442B2 (en) * 2011-02-11 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US8686448B2 (en) * 2011-05-27 2014-04-01 Seiko Epson Corporation Light emitting device, electronic apparatus, and manufacturing method of light emitting device
KR101454752B1 (ko) * 2011-12-09 2014-10-28 엘지디스플레이 주식회사 유기발광다이오드표시장치 및 그 제조 방법
KR102046157B1 (ko) * 2012-12-21 2019-12-03 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
TWI500146B (zh) * 2013-04-25 2015-09-11 Au Optronics Corp 電激發光顯示面板之畫素結構
KR102233943B1 (ko) * 2014-06-09 2021-04-01 삼성디스플레이 주식회사 유기 발광 표시 장치
CN104409468B (zh) * 2014-10-29 2018-09-14 京东方科技集团股份有限公司 显示基板及其显示装置、制作方法
CN107316880A (zh) * 2016-04-27 2017-11-03 中华映管股份有限公司 有机发光二极管显示面板的像素结构的制作方法
CN108695359B (zh) * 2017-04-11 2021-10-22 京东方科技集团股份有限公司 一种显示基板和显示装置
CN108511628B (zh) * 2018-05-16 2021-03-02 云谷（固安）科技有限公司 有机电致发光装置
CN108598134A (zh) * 2018-05-30 2018-09-28 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
US10937983B2 (en) * 2019-06-28 2021-03-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic electroluminescent device and display panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104904030A (zh) * 2013-01-04 2015-09-09 乐金显示有限公司 Oled微腔结构及其制造方法
US20170250231A1 (en) * 2016-02-26 2017-08-31 Japan Display Inc. Display device
CN107958963A (zh) * 2017-12-14 2018-04-24 安徽熙泰智能科技有限公司 全彩化oled微显示器件及其制备方法
CN109638037A (zh) * 2018-11-15 2019-04-16 武汉华星光电半导体显示技术有限公司 一种全彩化显示模块及其制作方法

Also Published As

Publication number Publication date
US11223031B2 (en) 2022-01-11
CN109638037B (zh) 2021-04-02
US20210167331A1 (en) 2021-06-03
CN109638037A (zh) 2019-04-16

Similar Documents

Publication Publication Date Title
CN100401549C (zh) 彩色有机el显示器及其制造方法
CN103811525B (zh) 有机发光显示设备及制造该有机发光显示设备的方法
CN105140247B (zh) 有机发光二极管阵列基板、制造方法及使用其的显示器
US9166204B2 (en) Organic light-emitting diode and method of fabricating the same
CN107195584B (zh) 一种显示面板的制备方法、显示面板及显示装置
CN102956673B (zh) 有机发光二极管显示器及其制造方法
CN103000662B (zh) 阵列基板及其制作方法、显示装置
US9786720B2 (en) Organic light emitting display device
CN104037202B (zh) 一种amoled显示器件及其子像素结构的制备方法
KR101990312B1 (ko) 유기전계발광표시장치 및 그 제조방법
CN102369788B (zh) 有机电致发光显示装置
WO2020233284A1 (zh) 显示面板及其制作方法、显示装置
KR20150057485A (ko) 유기발광 디스플레이 장치
WO2020098722A1 (zh) 一种全彩化显示模块及其制作方法
WO2016074372A1 (zh) Amoled显示面板及其制作方法、显示装置
WO2020258395A1 (zh) 一种有机电致发光器件及显示面板
WO2020093974A1 (zh) 阳极、发光器件、显示基板及其制作方法、显示装置
KR20150078396A (ko) 유기전계발광 표시장치
WO2017113743A1 (zh) 有机电致发光显示装置及其制备方法
CN107768526B (zh) 量子点电致发光器件
CN114566601B (zh) 显示面板及其制备方法
US12324343B2 (en) Top emitting display panels and display devices
CN100379050C (zh) 全色化有机电致发光显示器及其制作方法
US20070075634A1 (en) Trans-reflective organic electroluminescent panel and method of fabricating the same
JP2020080299A (ja) 表示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19884051

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19884051

Country of ref document: EP

Kind code of ref document: A1