WO2020087683A1 - 等离子体发生器及等离子体清洗装置 - Google Patents

等离子体发生器及等离子体清洗装置 Download PDF

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Publication number
WO2020087683A1
WO2020087683A1 PCT/CN2018/121357 CN2018121357W WO2020087683A1 WO 2020087683 A1 WO2020087683 A1 WO 2020087683A1 CN 2018121357 W CN2018121357 W CN 2018121357W WO 2020087683 A1 WO2020087683 A1 WO 2020087683A1
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Prior art keywords
plasma
plasma generator
gas
generator
common flow
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PCT/CN2018/121357
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English (en)
French (fr)
Inventor
王永青
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/332,791 priority Critical patent/US20200139412A1/en
Publication of WO2020087683A1 publication Critical patent/WO2020087683A1/zh
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/04—Cleaning by suction, with or without auxiliary action

Definitions

  • the present application relates to the technical field of display panels, and particularly to a plasma generator and a plasma cleaning device for cleaning a substrate or a cover of a display panel.
  • Plasma has the characteristics of low macro temperature and high electron temperature. It is rich in highly active excited ions and high energy charged particles, so it is suitable for the modification of the surface of the material and the cleaning of the surface of objects such as glass.
  • FIG. 1 shows a common plasma generating device 1 in the prior art.
  • the iso-stereoscopic self-generation device 1 includes a gas source 11, a high-pressure radio frequency generator 12 and a spray head 13.
  • the spray head 13 has an inner cavity 131, and the inner cavity 131 is an insulator.
  • the gas in the gas source 11 forms a gas flow 112 in the inner cavity 131 of the shower head 13 through a gas path 111.
  • the high-voltage RF generator 12 applies a RF voltage to a cathode and a central electrode 121 in the shower head 13 to form a high-frequency alternating electric field.
  • the gas flow 112 in the inner cavity 131 is oscillated by the arc 122 to form the plasma beam 2.
  • the plasma beam 2 In the semiconductor industry and the display panel industry, it is often necessary to use the above-mentioned plasma beam 2 to clean the product to increase its surface adhesion, for example, cleaning the glass substrate, cleaning the terminal part before bonding, and before bonding Clean the glass cover, etc.
  • the plasma beam 2 physically bombards the object to be cleaned, so that the material on the surface of the object to be cleaned becomes particles and gaseous materials, and then is exhausted through vacuuming to achieve the purpose of cleaning.
  • FIG. 2 shows a common plasma cleaning device 3 in the prior art.
  • the plasma cleaning device 3 includes a plasma generating cylinder 31.
  • One end of the plasma generating cylinder 31 is an air inlet 311 and one end is an air outlet 312.
  • the air inlet 311 and the air outlet 312 are respectively provided with ring electrodes 32, and are further electrically connected to an excitation power source 33.
  • the gas in the plasma generating cylinder 31 is formed into plasma.
  • a plasma beam emitted from a surface S to be cleaned is cleaned by nozzles 311 equally spaced on the plasma generating cylinder 31.
  • the plasma cleaning apparatus 3 shown in FIG. 2 since the plasma is emitted through the nozzle 311 after being generated in the plasma generating cylinder 31, there is an uneven phenomenon of plasma injection, resulting in an uneven cleaning effect.
  • the plasma cleaning device 3 when facing the surface to be cleaned by the curved surface, the plasma cleaning device 3 also has a problem of cleaning dead angles.
  • the purpose of the present application is to provide a plasma generator which can be applied to a plasma cleaning device through a modular structure design.
  • the plasma generator and the plasma cleaning device using the plasma generator described in the present application are particularly suitable for cleaning a curved cover plate, and a plasma spray tube is arranged reasonably to achieve the best cleaning uniformity.
  • a plasma generator for treating a surface to be treated.
  • the plasma generator includes at least one plasma torch assembly, the plasma torch assembly includes a plurality of plasma torches and a common flow channel; wherein, each plasma torch has an inlet end and a Exit end
  • Each plasma torch is fluidly connected to the common flow channel through the gas inlet end, and each plasma torch is evenly arranged on the common flow channel;
  • each plasma torch faces the surface to be treated, and the distance between the outlet end of each plasma generator and the surface to be treated is equal.
  • a plasma generator which includes a plurality of plasma torch assemblies and a gas source.
  • Each plasma torch assembly includes a common flow channel and a plurality of plasma torches, wherein each plasma torch has an outlet end and an inlet end with a diameter larger than the outlet end;
  • the plasma torch is fluidly connected to the common flow channel through the gas inlet end, and each of the plasma torches is evenly arranged on the common flow channel;
  • the outlet of each of the plasma torches The end faces the surface to be treated, and the distance between the outlet end of each plasma generator and the surface to be treated is equal; the common flow path of the plurality of plasma torch assemblies They are arranged parallel to each other; and, the outlet ends of the plasma torches are arranged alternately.
  • the plasma generator further includes a gas source, the gas source is fluidly connected to the common flow channel, and is used to provide gas to each of the plasma torch assemblies.
  • the plasma generator further includes an excitation power supply, and the excitation power supply is electrically connected to each of the plasma torches to allow the gas inlet to enter the plasma torch.
  • the gas is excited into a plasma.
  • the excitation power source is a high-voltage radio frequency generator.
  • the diameter of the inlet end is larger than the diameter of the outlet end.
  • the plasma generator includes a plurality of plasma torch assemblies, and the common flow channels of the plasma torch assemblies are arranged parallel to each other.
  • the outlet ends of the plasma torches are staggered.
  • the present application also provides a plasma cleaning device, including at least one plasma generator as described above and a platform, the platform is disposed below the plasma generator and used to place a surface to be treated.
  • the plasma cleaning apparatus further includes a processing chamber, and the surface to be processed is plasma cleaned in the processing chamber.
  • the processing chamber is connected to a vacuum exhaust device through at least one exhaust pipe to form a vacuum environment in the processing chamber.
  • the modular structure of the plasma generator makes the plasma cleaning device using the plasma generator particularly suitable for cleaning a curved cover plate.
  • FIG. 1 is a schematic structural diagram of a plasma generator in the prior art
  • FIG. 2 is a schematic structural diagram of a plasma cleaning device in the prior art
  • FIG. 3 is a schematic structural diagram of a plasma generator according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a plasma cleaning device according to an embodiment of the present application.
  • the first feature “above” or “below” the second feature may include the direct contact of the first and second features, or may include the first and second features Contact not directly but through another feature between them.
  • the first feature is “above”, “above” and “above” the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below” and “below” the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is less horizontal than the second feature.
  • the plasma generator and plasma cleaning device described in this application cannot be clearly displayed due to unnecessary details, only the main components related to this application are shown in the drawings. Those skilled in the art can understand that even if omitted in the drawings, the plasma generator and plasma cleaning device described in this application also include other conventional structures such as a frame and a drive frame.
  • a plasma generator 100 is provided for processing a surface S to be processed.
  • the plasma generator 100 includes: at least one plasma torch assembly 110, a gas source 120 and an excitation power source 130.
  • the plasma torch assembly 110 includes: a plurality of plasma torches 111 and a common flow channel 112.
  • each of the plasma torches 111 has an inlet end 1111 and an outlet end 1112.
  • the diameter of the inlet end 1111 is larger than the diameter of the outlet end 1112.
  • Each plasma torch 111 is fluidly connected to the common flow channel 112 through the gas inlet 1111, and each plasma torch 111 is evenly arranged on the common flow channel 112.
  • the outlet end 1112 of each plasma torch 111 faces the surface S to be treated, and between the outlet end 1112 of each plasma generator 111 and the surface S to be treated The distance is equal. For example, as shown in FIG.
  • the distance D1 between the first plasma nozzle 111a and the second plasma nozzle 111b is equal to the distance D2 between the second plasma nozzle 111b and the third plasma nozzle 111c .
  • the distance L1 between the first plasma nozzle 111a and the surface S to be treated is equal to the distance L2 between the second plasma nozzle 111b and the surface S to be treated, which is also equal to the The distance L3 between the third plasma nozzle 111c and the surface S to be treated.
  • the gas source 120 is fluidly connected to the common flow 112 to provide gas to each of the plasma torch assemblies 110.
  • the excitation power supply 130 is electrically connected to each plasma torch 111 through an internal wire. That is to say, in the plasma generator 100 of this embodiment, gas is uniformly delivered to each plasma nozzle 111 through a common flow channel 112, and to each laboratory through the excitation power supply 130
  • the plasma torch 111 applies a radio frequency voltage to form a high-frequency alternating electric field in each plasma torch 111.
  • the gas in each plasma nozzle 111 is excited into plasma.
  • the plasma generator 100 may include a plurality of plasma torch assemblies 110.
  • the common flow channels 112 of the plasma torch assembly 110 may be arranged parallel to each other, and the outlet ends 1112 of the plasma torch 111 are staggered.
  • each plasma torch assembly 110 may share the same gas source 120 and excitation power source 130.
  • the gas used to form the plasma may be a conventional gas used for forming plasma in the art, for example, the Plasma gas may be Ar, O 2 , N 2 , CDA, or the like.
  • a plasma cleaning apparatus 200 is also provided, which includes the plasma generator 100 and a platform 210.
  • the platform 210 is disposed below the plasma generator 100 and is used for Place the surface to be treated.
  • the plasma cleaning apparatus 200 further includes a processing chamber 220, and the processing chamber 220 is connected to a vacuum exhaust device 222 through at least one exhaust pipe 221 to be used in the processing chamber 220 A vacuum environment is formed inside, so that the surface S to be processed is subjected to plasma cleaning treatment in the processing chamber.
  • the processing chamber 220, the exhaust pipe 221, and the vacuum exhaust device 222 can all use components or structures with the same function known in the art.
  • the processing chamber 220, the exhaust pipe 221, and the vacuum exhaust device 222 can form a vacuum environment around the surface S to be processed and the plasma nozzle 111 of the plasma generator 100, and pump down through negative pressure
  • the exhaust gas and particulate matter generated in the cleaning process can be discharged.
  • the modular structure of the plasma generator 100 makes the plasma cleaning device using the plasma generator 100 particularly suitable Used for cleaning curved covers.
  • the plasma nozzle 111 in the horizontal section of the surface S to be cleaned is perpendicular to the surface S to be cleaned, the plasma emitted from the outlet end 1112 at the cleaning position The body beam is at 90 degrees to the surface S to be cleaned.
  • the plasma nozzle 111 is inclined, the plasma beam emitted from the outlet end 1112 at the cleaning position and the surface S to be cleaned are also at nearly 90 degrees . Therefore, the plasma generator 100 and the plasma cleaning device 200 according to the present invention can achieve the best cleaning uniformity.
  • the subject of this application can be manufactured and used in industry, with industrial applicability.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning In General (AREA)

Abstract

一种等离子体发生器（100）和应用该等离子体发生器（100）的等离子体清洗装置（200），用于处理一待处理表面（S），该等离子体发生器（100）包括至少一等离子体喷管组件（110），等离子体喷管组件（110）包括复数个等离子体喷管（111）和一公共流道（112），每一等离子体喷管（111）的出口端（1112）面朝待处理表面（S），每一出口端（1112）与待处理表面（S）之间的距离相等，通过等离子体发生器（100）的模组化结构，使得应用该等离子体发生器（100）的等离子体清洗装置（200）尤其适合于清洗曲面盖板，达到最佳的清洗均匀性。

Description

等离子体发生器及等离子体清洗装置 技术领域
本申请涉及显示面板技术领域，尤其涉及用于显示面板的基板或盖板清洗的等离子体发生器及等离子体清洗装置。
 背景技术
等离子体具有宏观温度低，电子温度高的特点，其富含高活性激发态离子和高能带电粒子，因而适用于对材料表面的改性和玻璃等物体表面的清洗。
图1所示的是现有技术中一常见的等离子体发生装置1。如图1所示，所述等立体自发生装置1包括：气体源11，高压射频发生器12和喷头13。所述喷头13具有一内腔131，所述内腔131为绝缘体。所述气体源11内的气体通过一气路111在所述喷头13的所述内腔131内形成气流112。所述高压射频发生器12则通过在所述喷头13内的一阴极及一中枢电极121施加射频电压，以形成高频交变电场。进而，使得所述内腔131内的气流112在电弧122激荡下形成等离子体束2。
在半导体行业和显示面板行业中，需要经常使用到上述等离子体束2对产品进行清洗以增加其表面附着力，例如，对玻璃基板的清洁，绑定前对端子部的清洁，以及贴合前对玻璃盖板的清洁等。通过等离子体束2对被清洗物进行物理轰击，使被清洗物表面物质变成粒子和气态物质，随后经过抽真空排出，从而达到清洗目的。
图2所示的是现有技术中一常见的等离子体清洗装置3。如图2所示，所述等离子体清洗装置3包括一等离子体发生筒31。所述等离子体发生筒31的一端为进气口311，一端为出气口312。所述进气口311与出气口312分别设有环形电极32，并进而与一激励电源33导电连接。使得所述等离子体发生筒31内的气体形成等离子体。此外，通过在所述等离子体发生筒31上等距间隔的喷管311，对一待清洁表面S射出等离子体束进行清洗。
 技术问题
在图2所示的等离子体清洗装置3中，由于等离子体为在所述等离子体发生筒31内产生后通过喷管311射出，存在等离子体射出不均匀现象，从而导致清洗效果不均匀。此外，在面临曲面待清洁表面时，所述等离子体清洗装置3还存在清洗死角的问题。
有鉴于此，需要提供一种新的等离子体发生器，以克服上述缺陷。
 技术解决方案
本申请的目的在于提供一种等离子体发生器，所述等离子体发生器通过模组化的结构设计，可以应用于等离子体清洗装置。此外，本申请所述的等离子体发生器及应用该等离子体发生器的等离子体清洗装置，尤其适合于清洗曲面盖板，通过合理设置等离子体喷管以达到最佳的清洗均匀性。
为了达到上述目的，提供一种等离子体发生器，用于处理一待处理表面。所述等离子体发生器包括至少一等离子体喷管组件，所述等离子体喷管组件包括复数个等离子体喷管和一公共流道；其中，每一等离子体喷管具有一进气端和一出口端；
每一所述等离子体喷管通过所述进气端与所述公共流道流体连接，且每一所述等离子体喷管在所述公共流道上均匀排列；并且，
每一所述等离子体喷管的所述出口端面朝所述待处理表面，并且，每一述等离子体发生器的所述出口端与所述待处理表面之间的距离相等。
在一优选实施例中，提供一种等离子体发生器，包括复数个等离子体喷管组件和一气体源。每一所述等离子体喷管组件包括一公共流道和复数个等离子体喷管，其中，每一等离子体喷管具有一出口端和一直径大于所述出口端的一进气端；每一所述等离子体喷管通过所述进气端与所述公共流道流体连接，且每一所述等离子体喷管在所述公共流道上均匀排列；每一所述等离子体喷管的所述出口端面朝所述待处理表面，并且，每一述等离子体发生器的所述出口端与所述待处理表面之间的距离相等；所述复数个等离子体喷管组件的所述公共流道相互平行设置；并且，所述等离子体喷管的所述出口端交错设置。
在一实施例中，所述离子体发生器还包括一气体源，所述气体源与所述公共流道流体连接，用于向每一所述等离子体喷管组件提供气体。
在一实施例中，所述离子体发生器还包括一激励电源，所述激励电源与每一所述等离子体喷管导电连接，用以将由所述进气端进入所述等离子体喷管内的气体激发为等离子体。
在一实施例中，所述激励电源为高压射频发生器。
在一实施例中，所述进气端的直径大于所述出口端的直径。
在一实施例中，所述等离子体发生器包括复数个等离子体喷管组件，所述等离子体喷管组件的所述公共流道相互平行设置。
在一实施例中，所述等离子体喷管的所述出口端交错设置。
本申请还提供一种等离子体清洗装置，包括至少一如上所述的等离子体发生器和一平台，所述平台设置于所述等离子体发生器下方，用于放置一待处理表面。
在一实施例中，所述等离子体清洗装置还包括一处理室，所述待处理表面在所述处理室内进行等离子体清洗处理。
在一实施例中，所述处理室通过至少一排气管与一真空排气装置连接，用以在所述处理室内形成真空环境。
 有益效果
根据本申请的所述等离子体发生器及等离子体清洗装置，通过所述等离子体发生器的模组化结构，使得应用该等离子体发生器的等离子体清洗装置尤其适合于清洗曲面盖板，通过合理设置等离子体喷管以达到最佳的清洗均匀性。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术一等离子体发生器的结构示意图；
图2是现有技术一等离子体清洗装置的结构示意图；
图3是根据本申请一实施例的等离子体发生器的结构示意图；
图4是根据本申请一实施例的等离子体清洗装置的结构示意图。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
为了避免因不必要的细节而无法清晰地展现本申请所述的等离子体发生器及等离子体清洗装置，在附图中仅示出了与本申请相关的主要部件。本领域技术人员可以理解的是，即使附图中省略了，但本申请所述的等离子体发生器及等离子体清洗装置还包括其他诸如机架、驱动机架的结构等常规结构。
请参见图3，在本实施例中提供一等离子体发生器100，用于处理一待处理表面S。如图3所示的，所述等离子体发生器100包括：至少一等离子体喷管组件110，一气体源120和一激励电源130。其中，所述等离子体喷管组件110包括：复数个等离子体喷管111和一公共流道112。
如图3所示的，每一所述等离子体喷管111具有一进气端1111和一出口端1112。优选地，所述进气端1111的直径大于所述出口端1112的直径。每一所述等离子体喷管111通过所述进气端1111与所述公共流道112流体连接，且每一所述等离子体喷管111在所述公共流道112上均匀排列。并且，每一所述等离子体喷管111的所述出口端1112面朝所述待处理表面S，且每一述等离子体发生器111的所述出口端1112与所述待处理表面S之间的距离相等。例如，如图3所示的，第一等离子体喷管111a与第二等离子体喷管111b之间的间距D1等于第二等离子体喷管111b与第三等离子体喷管111c之间的间距D2。并且，所述第一等离子体喷管111a与所述待处理表面S之间的距离L1等于所述第二等离子体喷管111b与所述待处理表面S之间的距离L2，也等于所述第三等离子体喷管111c与所述待处理表面S之间的距离L3。
此外，如图3所示的，所述气体源120与所述公共流112道流体连接，用于向每一所述等离子体喷管组件110提供气体。所述激励电源130通过内部导线，与每一所述等离子体喷管111导电连接。也就是说，在本实施例的所述等离子体发生器100中，通过一公共流道112向每一所述等离子体喷管111均匀地输送气体，并通过所述激励电源130向每一所述等离子体喷管111施加射频电压，以在每一等离子体喷管111内形成高频交变电场。从而，使得每一等离子体喷管111内的气体被激发为等离子体。
当然，为了更均匀地对所述待处理表面S进行清洗，所述等离子体发生器100可以包括复数个等离子体喷管组件110。所述等离子体喷管组件110的所述公共流道112可以相互平行设置，且所述等离子体喷管111的所述出口端1112交错设置。当然，每一所述等离子体喷管组件110可以共享同一个所述气体源120和所述激励电源130。
用于形成等离子体的气体可以是本领域用于形成等离子体的常规气体，例如Plasma气体可以为Ar、O 2、N 2、CDA等。
请参见图4，在本实施例中还提供一等离子体清洗装置200，包括所述等离子体发生器100和一平台210，所述平台210设置于所述等离子体发生器100的下方，用于放置所述待处理表面。如图4所示的，所述等离子体清洗装置200还包括一处理室220，所述处理室220通过至少一排气管221与一真空排气装置222连接，用以在所述处理室220内形成真空环境，以使所述待处理表面S在所述处理室内进行等离子体清洗处理。所述处理室220、排气管221与真空排气装置222均可以使用本领域已知的具有相同功能的部件或结构。所述处理室220、排气管221与真空排气装置222可以使得所述待处理表面S及所述等离子体发生器100的所述等离子体喷管111周围形成真空环境，通过负压抽气可以将清洗过程中产生的废气和颗粒物排出。
根据本申请所述的等离子体发生器100及所述等离子体清洗装置200中，通过所述等离子体发生器100的模组化结构，使得应用该等离子体发生器100的等离子体清洗装置尤其适合于清洗曲面盖板。如图3或图4所示的，由于在待清洗表面S的水平段内的所述等离子体喷管111垂直于所述待清洗表面S，使得清洗位置处的所述出口端1112射出的等离子体束与所述待清洗表面S呈90度。而在所述清洗表面S的弯曲段内，由于所述等离子体喷管111倾斜设置，使得清洗位置处的所述出口端1112射出的等离子体束与所述待清洗表面S亦呈近90度。从而，使得本发明所述的所述等离子体发生器100及所述等离子体清洗装置200可以达到最佳的清洗均匀性。
本申请已由上述相关实施例加以描述，然而上述实施例仅为实施本申请的范例。必需指出的是，已公开的实施例并未限制本申请的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本申请的范围内。
 工业实用性
本申请的主体可以在工业中制造和使用，具备工业实用性。

Claims (14)

  1. 一种等离子体发生器，用于处理一待处理表面，其中，所述等离子体发生器包括复数个等离子体喷管组件和一气体源；并且其中，
    每一所述等离子体喷管组件包括：
    一公共流道；以及，
    复数个等离子体喷管，每一等离子体喷管具有一出口端和一直径大于所述出口端的一进气端；
    每一所述等离子体喷管通过所述进气端与所述公共流道流体连接，且每一所述等离子体喷管在所述公共流道上均匀排列；
    每一所述等离子体喷管的所述出口端面朝所述待处理表面，并且，每一述等离子体发生器的所述出口端与所述待处理表面之间的距离相等；
    所述复数个等离子体喷管组件的所述公共流道相互平行设置；并且，
    所述等离子体喷管的所述出口端交错设置。
  2. 如权利要求1所述的等离子体发生器，其特征在于，所述离子体发生器还包括一气体源，所述气体源与所述公共流道流体连接，用于向每一所述等离子体喷管组件提供气体。
  3. 如权利要求2所述的等离子体发生器，其特征在于，所述离子体发生器还包括一激励电源，所述激励电源与每一所述等离子体喷管导电连接，用以将由所述进气端进入所述等离子体喷管内的气体激发为等离子体。
  4. 如权利要求3所述的等离子体发生器，其特征在于，所述激励电源为高压射频发生器。
  5. 一种等离子体发生器，用于处理一待处理表面，其中，所述等离子体发生器包括至少一等离子体喷管组件，所述等离子体喷管组件包括复数个等离子体喷管和一公共流道；其中，每一等离子体喷管具有一进气端和一出口端；
    每一所述等离子体喷管通过所述进气端与所述公共流道流体连接，且每一所述等离子体喷管在所述公共流道上均匀排列；并且，
    每一所述等离子体喷管的所述出口端面朝所述待处理表面，并且，每一述等离子体发生器的所述出口端与所述待处理表面之间的距离相等。
  6. 如权利要求5所述的等离子体发生器，其特征在于，所述离子体发生器还包括一气体源，所述气体源与所述公共流道流体连接，用于向每一所述等离子体喷管组件提供气体。
  7. 如权利要求6所述的等离子体发生器，其特征在于，所述离子体发生器还包括一激励电源，所述激励电源与每一所述等离子体喷管导电连接，用以将由所述进气端进入所述等离子体喷管内的气体激发为等离子体。
  8. 如权利要求7所述的等离子体发生器，其特征在于，所述激励电源为高压射频发生器。
  9. 如权利要求1所述的等离子体发生器，其特征在于，所述进气端的直径大于所述出口端的直径。
  10. 如权利要求5所述的等离子体发生器，其特征在于，所述等离子体发生器包括复数个等离子体喷管组件，所述等离子体喷管组件的所述公共流道相互平行设置。
  11. 如权利要求10所述的等离子体发生器，其特征在于，所述等离子体喷管的所述出口端交错设置。
  12. 一种等离子体清洗装置，包括至少一如权利要求1所述的等离子体发生器和一平台，所述平台设置于所述等离子体发生器下方，用于放置一待处理表面。
  13. 如权利要求12所述的等离子体清洗装置，其特征在于，所述等离子体清洗装置还包括一处理室，所述待处理表面在所述处理室内进行等离子体清洗处理。
  14. 如权利要求13所述的等离子体清洗装置，其特征在于，所述处理室通过至少一排气管与一真空排气装置连接，用以在所述处理室内形成真空环境。
PCT/CN2018/121357 2018-10-30 2018-12-15 等离子体发生器及等离子体清洗装置 Ceased WO2020087683A1 (zh)

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