WO2020087224A1 - Driving circuit and switch power supply - Google Patents

Driving circuit and switch power supply Download PDF

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Publication number
WO2020087224A1
WO2020087224A1 PCT/CN2018/112479 CN2018112479W WO2020087224A1 WO 2020087224 A1 WO2020087224 A1 WO 2020087224A1 CN 2018112479 W CN2018112479 W CN 2018112479W WO 2020087224 A1 WO2020087224 A1 WO 2020087224A1
Authority
WO
WIPO (PCT)
Prior art keywords
transformer
resistor
mos tube
output terminal
coupled
Prior art date
Application number
PCT/CN2018/112479
Other languages
French (fr)
Chinese (zh)
Inventor
刘一
Original Assignee
深圳配天智能技术研究院有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳配天智能技术研究院有限公司 filed Critical 深圳配天智能技术研究院有限公司
Priority to PCT/CN2018/112479 priority Critical patent/WO2020087224A1/en
Priority to CN201880087346.6A priority patent/CN111684694A/en
Publication of WO2020087224A1 publication Critical patent/WO2020087224A1/en

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion

Definitions

  • This application relates to the technical field of power supply, in particular to a driving circuit and a switching power supply.
  • full-bridge inverter circuits are widely used, and many high-power switching power supplies use this circuit structure.
  • the advantage of the full-bridge circuit is that the output power is large, and the power switch tube is required to have a low withstand voltage, which is convenient for selecting the power switch tube.
  • the driving circuit is used to amplify the PWM signal output by the control circuit, thereby meeting the requirements of driving the power switch tube.
  • the performance of the drive circuit is directly related to the switching speed and power consumption of the switch tube, the overall efficiency and reliability. Among them, the driving circuit must realize the electrical isolation of the control circuit and the gate of the driven switch tube.
  • the electrical isolation of the control circuit and the gate of the driven switch tube is achieved by a photocoupler.
  • the photocoupler includes a light emitting diode and a phototransistor. When the light emitting diode emits light, the phototransistor is turned on.
  • the optical coupler has a narrow frequency band, and is not suitable for transmitting high-frequency switching signals; in addition, the optical coupler has a long delay time, and therefore the response is slow.
  • the main technical problem solved by this application is to provide a driving circuit and a switching power supply, which can reduce the signal transmission delay time and transmit high-frequency signals.
  • a technical solution adopted by the present application is to provide a driving circuit which is coupled to a full-bridge inverter circuit, and the driving circuit at least includes a control chip, a first driving chip, and a second driving chip.
  • the control chip is coupled to the first driving chip, the first Two driving chips, the third driving chip and the fourth driving chip, the primary coil of the first transformer and the first secondary coil of the first transformer and the second secondary of the first transformer respectively Coil coupling
  • the first secondary coil of the first transformer includes a first output terminal of the first transformer and a second output terminal of the first transformer
  • the second secondary coil of the first transformer includes A third output terminal of the first transformer and a fourth output terminal of the first transformer
  • a primary coil of the first transformer includes a first input terminal of the first transformer and the first transformer
  • the second input terminal, the first driving chip is coupled to the first input terminal of the first transformer
  • the second driving chip is coupled to the second input terminal of the first transformer;
  • the primary of the second transformer The coils are respectively coupled to the first secondary coil of the second transformer and the second secondary coil of
  • the full-bridge inverter circuit includes at least a first MOS tube, a second MOS tube, a third MOS tube, and a fourth MOS tube.
  • the first output terminal of the first transformer is connected to the first The gate of a MOS tube
  • the source of the first MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube
  • the fourth output terminal of the first transformer passes
  • the second resistor is connected to the gate of the second MOS tube
  • the source of the second MOS tube is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer and all
  • the source of the fourth MOS tube, the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through the fourth resistor
  • the drain of the fourth MOS tube is coupled to the first A second output terminal of the second transformer and a source of the third MOS tube
  • a first output terminal of the second transformer is connected to the gate of the third MOS tube through the third resistor
  • a switching power supply including a driving circuit
  • the driving circuit is coupled to a full-bridge inverter circuit
  • the driving circuit includes at least a control chip and a A driving chip, a second driving chip, a third driving chip, a fourth driving chip, a first resistor, a second resistor, a third resistor, a fourth resistor, a first transformer and a second transformer
  • the control chip is coupled to the The first driving chip, the second driving chip, the third driving chip and the fourth driving chip, the primary coil of the first transformer and the first secondary coil and the first transformer of the first transformer respectively The second secondary coil of the first transformer is coupled.
  • the first secondary coil of the first transformer includes a first output terminal of the first transformer and a second output terminal of the first transformer.
  • a second secondary coil of a transformer includes a third output terminal of the first transformer and a fourth output terminal of the first transformer, and a primary coil of the first transformer includes the first transformer A first input terminal and a second input terminal of the first transformer, the first driving chip is coupled to the first input terminal of the first transformer, and the second driving chip is coupled to the first input terminal of the first transformer Two input terminals;
  • the primary coil of the second transformer is respectively coupled to the first secondary coil of the second transformer and the second secondary coil of the second transformer, the first secondary of the second transformer
  • the coil includes a first output terminal of the second transformer and a second output terminal of the second transformer, and a second secondary coil of the second transformer includes a third output terminal of the second transformer and the first A fourth output end of the second transformer, the primary coil of the second transformer includes a first input end of the second transformer and a second input end of the second transformer, and the third driving chip is
  • the full-bridge inverter circuit includes at least a first MOS tube, a second MOS tube, a third MOS tube, and a fourth MOS tube.
  • the first output terminal of the first transformer is connected to the first The gate of a MOS tube
  • the source of the first MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube
  • the fourth output terminal of the first transformer passes
  • the second resistor is connected to the gate of the second MOS tube
  • the source of the second MOS tube is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer and all
  • the source of the fourth MOS tube, the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through the fourth resistor
  • the drain of the fourth MOS tube is coupled to the first A second output terminal of the second transformer and a source of the third MOS tube
  • a first output terminal of the second transformer is connected to the gate of the third MOS tube through the third resistor
  • the first driving chip of the present application is coupled to the first input terminal of the first transformer, the second driving chip is coupled to the second input terminal of the first transformer, and the third The driving chip is coupled to the first input terminal of the second transformer, and the fourth driving chip is coupled to the second input terminal of the second transformer;
  • the first output terminal of the first transformer is connected to the gate of the first MOS tube through the first resistor
  • the source of a MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube
  • the fourth output terminal of the first transformer is connected to the gate of the second MOS tube through the second resistor
  • the second MOS tube Is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer, and the source electrode of the fourth MOS tube, and the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through a fourth resistor Electrode
  • the drain of the fourth MOS tube is coupled to the second output of the second transformer and
  • FIG. 1 is a circuit diagram of the driving circuit of the first embodiment of the present application
  • FIG. 2 is a circuit diagram of a driving circuit of a second embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a switching power supply according to the first embodiment of the present application.
  • FIG. 1 is a circuit diagram of the driving circuit of the first embodiment of the present application.
  • the driving circuit 10 of this embodiment is coupled to the full-bridge inverter circuit 20 and is used to drive the MOS transistor of the full-bridge inverter circuit 20.
  • the driving circuit 10 includes at least a control chip 11, a first driving chip U1, a second driving chip U2, a third driving chip U3, a fourth driving chip U4, a first transformer 14, a second transformer 15, a first resistor R1 The second resistor R2, the third resistor R3, and the fourth resistor R4.
  • the control chip 11 is coupled to the first driving chip U1, the second driving chip U2, the third driving chip U3, and the fourth driving chip U4, wherein the first driving chip U1 may include a first amplifier 121, and the second driving chip U2 may include a first Two amplifiers 122, the third driving chip U3 may include a third amplifier 123, the fourth driving chip U4 may include a fourth amplifier 124; the input terminal of the first amplifier 121 is connected to the first output terminal Q1 of the control chip 11, and the second amplifier The input of 122 is connected to the second output Q2 of the control chip 11, the input of the third amplifier 123 is connected to the third output Q3 of the control chip 11, and the input of the fourth amplifier 124 is connected to the fourth output of the control chip 11 Q4 connection.
  • the primary coil of the first transformer 14 is coupled to the first secondary coil of the first transformer 14 and the second secondary coil of the first transformer 14 respectively.
  • the first secondary coil of the first transformer 14 includes the first An output terminal and a second output terminal of the first transformer 14, the second secondary coil of the first transformer 14 includes a third output terminal of the first transformer 14 and a fourth output terminal of the first transformer 14, the
  • the primary coil includes a first input end of the first transformer 14 and a second input end of the first transformer 14, the first driving chip U1 is coupled to the first input end of the first transformer 14, and the second driving chip U2 is coupled to the first transformer
  • the second input terminal of 14, that is, the output terminal of the first amplifier 121 is connected to the first input terminal of the first transformer 14, and the output terminal of the second amplifier 122 is connected to the second input terminal of the first transformer 14.
  • the primary coil of the second transformer 15 is coupled to the first secondary coil of the second transformer 15 and the second secondary coil of the second transformer 15 respectively.
  • the first secondary coil of the second transformer 15 includes the first An output terminal and a second output terminal of the second transformer 15, the second secondary coil of the second transformer 15 includes a third output terminal of the second transformer 15 and a fourth output terminal of the second transformer 15,
  • the primary coil includes a first input terminal of the second transformer 15 and a second input terminal of the second transformer 15, the third driving chip U3 is coupled to the first input terminal of the second transformer 15, and the fourth driving chip U4 is coupled to the second transformer
  • the second input terminal of 15, that is, the output terminal of the third amplifier 123 is connected to the first input terminal of the second transformer 15, and the output terminal of the fourth amplifier 124 is connected to the second input terminal of the second transformer 15.
  • the logic signal output from the first output terminal Q1 of the control chip 11 is amplified by the first amplifier 121 and input to the first input terminal of the first transformer 14, and the logic signal output from the second output terminal Q2 of the control chip 11 passes through the second amplifier 122 After being amplified and input to the second input terminal of the first transformer 14, the logic signal output from the third output terminal Q3 of the control chip 11 is amplified and input to the first input terminal of the second transformer 15 through the third amplifier 131 to control the
  • the logic signal output from the fourth output terminal Q4 is amplified by the fourth amplifier 132 and input to the second input terminal of the second transformer 15.
  • the full-bridge inverter circuit 20 includes at least a first MOS tube T1, a second MOS tube T2, a third MOS tube T3, and a fourth MOS tube T4.
  • the first output terminal of the first transformer 14 is connected to the gate of the first MOS transistor T1 through a first resistor R1, and the source of the first MOS transistor T1 is coupled to the second output terminal of the first transformer 14 and the second MOS transistor T2 Drain;
  • the fourth output of the first transformer 14 is connected to the gate of the second MOS transistor T2 through a second resistor R2, the source of the second MOS transistor T2 is coupled to the third output of the first transformer 14, the second transformer
  • the fourth output terminal of the second transformer 15 is connected to the gate of the fourth MOS transistor T4 through a fourth resistor R4, and the drain of the fourth MOS transistor T4 is coupled
  • the first input terminal of the first transformer 14 and the first output terminal and the third output terminal of the first transformer 14 have the same name
  • the first input terminal of the second transformer 15 and the first output terminal of the second transformer 15 and The third output is the same name.
  • the first input end of the first transformer 14 may be the same name as the second output end and the fourth output end of the first transformer 14
  • the first input end of the second transformer 15 may be the same as the second transformer 15
  • the second output terminal and the fourth output terminal have the same name, so that the output windings connected to the first MOS tube T1 and the second MOS tube T2 can be wound in the same direction.
  • the full-bridge inverter circuit 20 may further include a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, and a tenth Six resistors R16; one end of the first capacitor C1, one end of the second capacitor C2, one end of the thirteenth resistor R13 and one end of the fourteenth resistor R14 are connected to the source of the first MOS transistor T1; one end of the third capacitor C3, One end of the fourth capacitor C4, one end of the fifteenth resistor R15 and one end of the sixteenth resistor R16 are connected to the source of the third MOS tube; the other end of the first capacitor C1, the other end of the thirteenth resistor R13, the third The other end of the capacitor C3 and the other end of the fifteenth resistor R15 are connected to the drain of the first MOS transistor T1; the other end of the second capacitor C2, the other end of the fourth capacitor C4, the other end
  • the thirteenth resistor R13, the fourteenth resistor R14, the fifteenth resistor R15 and the sixteenth resistor R16 respectively play a voltage dividing role to adjust the first MOS tube T1, the second MOS tube T2, the third MOS tube The voltage across T3 and the fourth MOS transistor T4.
  • the first capacitor C1, the second capacitor C2, the third capacitor C3, and the fourth capacitor C4 are used to eliminate voltage spikes generated when the switches are connected in parallel to protect the MOS. tube.
  • the first MOS tube T1, the second MOS tube T2, the third MOS tube T3, and the fourth MOS tube T4 are all P-type MOS tubes.
  • the first MOS tube T1, the second MOS tube T2, the third MOS tube T3, and the fourth MOS tube T4 may be other MOS tubes, such as the first MOS tube T1, the second MOS tube T2, the third Both the MOS tube T3 and the fourth MOS tube T4 are N-type MOS tubes.
  • the first output terminal of the first transformer 14 controls the first MOS transistor T1 to turn on, and the second MOS The tube T2 is disconnected; when the logic signal received at the first input terminal of the second transformer 15 flows to the second input terminal of the second transformer 15, the first output terminal of the second transformer 15 controls the third MOS transistor T3 to conduct On, the fourth MOS transistor T4 is off.
  • the first MOS transistor T1 When the logic signal received by the second input terminal of the first transformer 14 flows to the first input terminal of the first transformer 14, the first MOS transistor T1 is disconnected, and the fourth output terminal 146 of the first transformer 14 controls the second The MOS transistor T2 is turned on; when the logic signal received at the second input terminal of the second transformer 15 flows to the first input terminal of the second transformer 15, the third MOS transistor T3 is disconnected, and the fourth of the second transformer 15 The output terminal controls the fourth MOS transistor T4 to be turned on.
  • the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are driving resistors, and their functions are to suppress oscillation and limit the current.
  • the driving resistance has a great influence on the MOSFET turn-on process.
  • the small driving resistance is helpful to accelerate the turn-off speed and reduce the turn-off loss, but it will cause excessive di / dt and produce a large collector voltage spike.
  • the resistance values of R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are preferably set to 60-90 ohms, thereby ensuring the first MOS tube T1, the second MOS tube T2 and the third MOS tube
  • the driving current of T3 and the fourth MOS tube T4, and to avoid the driving voltage of the first MOS tube T1, the second MOS tube T2, the third MOS tube T3 and the fourth MOS tube T4 is too high.
  • the first driving chip U1 and the second driving chip U2 of this embodiment isolate and drive the first MOS transistor T1 and the second MOS transistor T2 of the full-bridge inverter circuit 20 through the first transformer 14, and the third driving chip U3 and the fourth The driving chip U4 isolates and drives the third MOS transistor T3 and the fourth MOS transistor T4 of the full-bridge inverter circuit 20 through the second transformer 15, which can realize the isolated driving.
  • the structure is simple and the cost is reduced.
  • the first transformer 14 and the second transformer 15 The delay time of the transmission signal is small, suitable for transmitting high-frequency signals; in addition, the output windings connected to the first MOS tube T1 and the second MOS tube T2 are wound in the same direction, but the two outputs are reversely connected to the first MOS tube T1 With the gate of the second MOS tube T2, the MOS tube on the same bridge arm of the full-bridge inverter circuit 20 is reversed, so that the first MOS tube T1 and the second MOS tube T2 will not be turned on at the same time. The third MOS transistor T3 and the fourth MOS transistor T4 will not be turned on at the same time, thereby preventing the full-bridge inverter circuit 20 from being short-circuited.
  • a certain Dead time that is, the turn-on and turn-off of the upper and lower MOS tubes of the same bridge arm are staggered by a certain time.
  • the technical solution for setting the dead time is the existing technology and is not the focus of this case, so it will not be described here.
  • the present application further provides the driving circuit of the second embodiment, which is described on the basis of the driving circuit 10 disclosed in the first embodiment.
  • the driving circuit 10 of this embodiment further includes a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a first diode D1, a second diode D2, a first Three diodes D3, fourth diodes D4, ninth resistor R9, tenth resistor R10, eleventh resistor R11 and twelfth resistor R12.
  • the anode of the first diode D1 is connected to the gate of the first MOS transistor T1 through a fifth resistor R5, and the cathode of the first diode D1 is connected to the first output of the first transformer 14; the second diode D2 The anode of the second diode is connected to the gate of the second MOS transistor T2 through a sixth resistor R6, the cathode of the second diode D2 is connected to the fourth output terminal of the first transformer 14; the anode of the third diode D3 is connected through the seventh resistor R7
  • the gate of the third MOS transistor T3, the cathode of the third diode D3 is connected to the first output terminal of the second transformer 15; the anode of the fourth diode D4 is connected to the gate of the fourth MOS transistor T4 through the eighth resistor R8
  • the cathode of the fourth diode D4 is connected to the fourth output terminal of the second transformer 15.
  • the fifth resistor R5 and the first diode D1 constitute the discharge circuit of the first MOS transistor T1
  • the sixth resistor R6 and the second diode D2 constitute the discharge circuit of the second MOS transistor T2
  • the three diodes D3 constitute the discharge circuit of the third MOS transistor T3
  • the eighth resistor R8 and the fourth diode D4 constitute the discharge circuit of the fourth MOS transistor T4.
  • the resistance of the fifth resistor R5 is smaller than that of the first resistor R1, the resistance of the sixth resistor R6 is smaller than that of the second resistor R2, the resistance of the seventh resistor R7 is smaller than that of the third resistor R3, the eighth The resistance of the resistor R8 is smaller than the resistance of the fourth resistor R4, so the first MOS transistor T1, the second MOS transistor T2, the third MOS transistor T3, and the fourth MOS transistor T4 can quickly discharge, increasing the turn-off speed.
  • the resistance values of the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, and the eighth resistor R8 can all be set to 10-30 ohms.
  • the first driving chip U1 is connected to the first input terminal of the first transformer 14 through a ninth resistor R9
  • the second driving chip U2 is connected to the second input terminal of the first transformer 14 through a tenth resistor R10
  • the third driving chip U3 is connected through
  • the eleventh resistor R11 is connected to the first input terminal of the second transformer 15
  • the fourth driving chip U4 is connected to the second input terminal of the second transformer 15 through the twelfth resistor R12.
  • the fifth resistor R5 and the first diode D1 of this embodiment constitute the discharge circuit of the first MOS transistor T1
  • the sixth resistor R6 and the second diode D2 constitute the second MOS
  • the discharge circuit of the tube T2 the seventh resistor R7 and the third diode D3 constitute the discharge circuit of the third MOS tube T3, and the eighth resistor R8 and the fourth diode D4 constitute the discharge circuit of the fourth MOS tube T4.
  • the first MOS tube T1, the second MOS tube T2, the third MOS tube T3, and the fourth MOS tube T4 are quickly discharged to increase the turn-off speed.
  • the present application also provides a switching power supply 30.
  • the switching power supply 30 disclosed in this embodiment includes a driving circuit 31.
  • the driving circuit 31 is the driving circuit disclosed in the foregoing embodiment, and details are not described herein again.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

A driving circuit and a switch power supply. The driving circuit (10) at least comprises a control chip (11), a first driving chip (U1), a second driving chip (U2), a third driving chip (U3), a fourth driving chip (U4), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a first transformer (14) and a second transformer (15), wherein the first driving chip (U1) is coupled to a first input end of the first transformer (14); the second driving chip (U2) is coupled to a second input end of the first transformer (14); the third driving chip (U3) is coupled to a first input end of the second transformer (15); and the fourth driving chip (U4) is coupled to a second input end of the second transformer (15). By means of isolating the first transformer (14) and the second transformer (15), that is, the driving circuit (10) being coupled to a full-bridge inverter circuit (20) through the first transformer (14) and the second transformer (15), a signal transmission delay time is reduced, and high-frequency signals can be transmitted.

Description

驱动电路及开关电源 Drive circuit and switching power supply The
【技术领域】【Technical Field】
本申请涉及电源技术领域,特别是涉及一种驱动电路及开关电源。This application relates to the technical field of power supply, in particular to a driving circuit and a switching power supply.
【背景技术】 【Background technique】
目前,全桥式逆变电路应用广泛,许多高功率应用开关电源都采用该电路结构。全桥式电路的优点是输出功率较大,要求功率开关管耐压较低,便于选取功率开关管。At present, full-bridge inverter circuits are widely used, and many high-power switching power supplies use this circuit structure. The advantage of the full-bridge circuit is that the output power is large, and the power switch tube is required to have a low withstand voltage, which is convenient for selecting the power switch tube.
驱动电路用于将控制电路输出的PWM信号进行放大,进而满足驱动功率开关管的要求。驱动电路的性能直接关系到开关管的开关速度和功耗、整机效率和可靠性。其中,驱动电路必须实现控制电路与被驱动开关管的栅极的电隔离。The driving circuit is used to amplify the PWM signal output by the control circuit, thereby meeting the requirements of driving the power switch tube. The performance of the drive circuit is directly related to the switching speed and power consumption of the switch tube, the overall efficiency and reliability. Among them, the driving circuit must realize the electrical isolation of the control circuit and the gate of the driven switch tube.
现有技术的通过光耦合器实现控制电路与被驱动开关管的栅极的电隔离,光耦合器包括发光二极管和光敏晶体管,在发光二极管发光时,光敏晶体管导通。但光耦合器的频带窄,不适合用于传递高频开关信号;此外光耦合器的延迟时间长,因此反应慢。In the prior art, the electrical isolation of the control circuit and the gate of the driven switch tube is achieved by a photocoupler. The photocoupler includes a light emitting diode and a phototransistor. When the light emitting diode emits light, the phototransistor is turned on. However, the optical coupler has a narrow frequency band, and is not suitable for transmitting high-frequency switching signals; in addition, the optical coupler has a long delay time, and therefore the response is slow.
【发明内容】 [Invention content]
本申请主要解决的技术问题是提供一种驱动电路及开关电源,能够减小信号传输延迟时间,并传递高频信号。The main technical problem solved by this application is to provide a driving circuit and a switching power supply, which can reduce the signal transmission delay time and transmit high-frequency signals.
为解决上述技术问题,本申请采用的一个技术方案是:提供一种驱动电路,其耦接全桥式逆变电路,所述驱动电路至少包括控制芯片、第一驱动芯片、第二驱动芯片、第三驱动芯片、第四驱动芯片、第一电阻、第二电阻、第三电阻、第四电阻、第一变压器和第二变压器,所述控制芯片耦接所述第一驱动芯片、所述第二驱动芯片、所述第三驱动芯片和所述第四驱动芯片,所述第一变压器的初级线圈分别与所述第一变压器的第一次级线圈及所述第一变压器的第二次级线圈耦接,所述第一变压器的第一次级线圈包括所述第一变压器的第一输出端及所述第一变压器的第二输出端,所述第一变压器的第二次级线圈包括所述第一变压器的第三输出端及所述第一变压器的第四输出端,所述第一变压器的初级线圈包括所述第一变压器的第一输入端及所述第一变压器的第二输入端,所述第一驱动芯片耦接所述第一变压器的第一输入端,所述第二驱动芯片耦接所述第一变压器的第二输入端;所述第二变压器的初级线圈分别与所述第二变压器的第一次级线圈及所述第二变压器的第二次级线圈耦接,所述第二变压器的第一次级线圈包括所述第二变压器的第一输出端及所述第二变压器的第二输出端,所述第二变压器的第二次级线圈包括所述第二变压器的第三输出端及所述第二变压器的第四输出端,所述第二变压器的初级线圈包括所述第二变压器的第一输入端及所述第二变压器的第二输入端,所述第三驱动芯片耦接所述第二变压器的第一输入端,所述第四驱动芯片耦接所述第二变压器的第二输入端;In order to solve the above technical problems, a technical solution adopted by the present application is to provide a driving circuit which is coupled to a full-bridge inverter circuit, and the driving circuit at least includes a control chip, a first driving chip, and a second driving chip. A third driving chip, a fourth driving chip, a first resistor, a second resistor, a third resistor, a fourth resistor, a first transformer, and a second transformer, the control chip is coupled to the first driving chip, the first Two driving chips, the third driving chip and the fourth driving chip, the primary coil of the first transformer and the first secondary coil of the first transformer and the second secondary of the first transformer respectively Coil coupling, the first secondary coil of the first transformer includes a first output terminal of the first transformer and a second output terminal of the first transformer, the second secondary coil of the first transformer includes A third output terminal of the first transformer and a fourth output terminal of the first transformer, a primary coil of the first transformer includes a first input terminal of the first transformer and the first transformer The second input terminal, the first driving chip is coupled to the first input terminal of the first transformer, the second driving chip is coupled to the second input terminal of the first transformer; the primary of the second transformer The coils are respectively coupled to the first secondary coil of the second transformer and the second secondary coil of the second transformer, the first secondary coil of the second transformer includes the first output of the second transformer Terminal and the second output terminal of the second transformer, the second secondary coil of the second transformer includes a third output terminal of the second transformer and a fourth output terminal of the second transformer, the first The primary coil of the two transformers includes a first input end of the second transformer and a second input end of the second transformer, the third driving chip is coupled to the first input end of the second transformer, the first Four driving chips are coupled to the second input end of the second transformer;
所述全桥式逆变电路至少包括第一MOS管、第二MOS管、第三MOS管以及第四MOS管,所述第一变压器的第一输出端通过所述第一电阻连接所述第一MOS管的栅极,所述第一MOS管的源极耦接所述第一变压器的第二输出端和所述第二MOS管的漏极,所述第一变压器的第四输出端通过所述第二电阻连接所述第二MOS管的栅极,所述第二MOS管的源极耦接所述第一变压器的第三输出端、所述第二变压器的第三输出端和所述第四MOS管的源极,所述第二变压器的第四输出端通过所述第四电阻连接所述第四MOS管的栅极,所述第四MOS管的漏极耦接所述第二变压器的第二输出端和所述第三MOS管的源极,所述第二变压器的第一输出端通过所述第三电阻连接所述第三MOS管的栅极,所述第三MOS管的漏极耦接所述第一MOS管的漏极;所述第一变压器的第一输入端和所述第一变压器的第一输出端以及第三输出端为同名端,所述第二变压器的第一输入端和所述第二变压器的第一输出端以及第三输出端为同名端。The full-bridge inverter circuit includes at least a first MOS tube, a second MOS tube, a third MOS tube, and a fourth MOS tube. The first output terminal of the first transformer is connected to the first The gate of a MOS tube, the source of the first MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube, the fourth output terminal of the first transformer passes The second resistor is connected to the gate of the second MOS tube, and the source of the second MOS tube is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer and all The source of the fourth MOS tube, the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through the fourth resistor, and the drain of the fourth MOS tube is coupled to the first A second output terminal of the second transformer and a source of the third MOS tube, a first output terminal of the second transformer is connected to the gate of the third MOS tube through the third resistor, and the third MOS The drain of the tube is coupled to the drain of the first MOS tube; the first input terminal of the first transformer and the first output terminal of the first transformer A third output terminal and the dotted terminals, a first input terminal of said second transformer and said second transformer first output terminal and third output terminal of the same name.
为解决上述技术问题,本申请采用的另一个技术方案是:提供一种开关电源,其包括驱动电路,所述驱动电路耦接全桥式逆变电路,所述驱动电路至少包括控制芯片、第一驱动芯片、第二驱动芯片、第三驱动芯片、第四驱动芯片、第一电阻、第二电阻、第三电阻、第四电阻、第一变压器和第二变压器,所述控制芯片耦接所述第一驱动芯片、所述第二驱动芯片、所述第三驱动芯片和所述第四驱动芯片,所述第一变压器的初级线圈分别与所述第一变压器的第一次级线圈及所述第一变压器的第二次级线圈耦接,所述第一变压器的第一次级线圈包括所述第一变压器的第一输出端及所述第一变压器的第二输出端,所述第一变压器的第二次级线圈包括所述第一变压器的第三输出端及所述第一变压器的第四输出端,所述第一变压器的初级线圈包括所述第一变压器的第一输入端及所述第一变压器的第二输入端,所述第一驱动芯片耦接所述第一变压器的第一输入端,所述第二驱动芯片耦接所述第一变压器的第二输入端;所述第二变压器的初级线圈分别与所述第二变压器的第一次级线圈及所述第二变压器的第二次级线圈耦接,所述第二变压器的第一次级线圈包括所述第二变压器的第一输出端及所述第二变压器的第二输出端,所述第二变压器的第二次级线圈包括所述第二变压器的第三输出端及所述第二变压器的第四输出端,所述第二变压器的初级线圈包括所述第二变压器的第一输入端及所述第二变压器的第二输入端,所述第三驱动芯片耦接所述第二变压器的第一输入端,所述第四驱动芯片耦接所述第二变压器的第二输入端;In order to solve the above technical problems, another technical solution adopted by the present application is to provide a switching power supply including a driving circuit, the driving circuit is coupled to a full-bridge inverter circuit, and the driving circuit includes at least a control chip and a A driving chip, a second driving chip, a third driving chip, a fourth driving chip, a first resistor, a second resistor, a third resistor, a fourth resistor, a first transformer and a second transformer, the control chip is coupled to the The first driving chip, the second driving chip, the third driving chip and the fourth driving chip, the primary coil of the first transformer and the first secondary coil and the first transformer of the first transformer respectively The second secondary coil of the first transformer is coupled. The first secondary coil of the first transformer includes a first output terminal of the first transformer and a second output terminal of the first transformer. A second secondary coil of a transformer includes a third output terminal of the first transformer and a fourth output terminal of the first transformer, and a primary coil of the first transformer includes the first transformer A first input terminal and a second input terminal of the first transformer, the first driving chip is coupled to the first input terminal of the first transformer, and the second driving chip is coupled to the first input terminal of the first transformer Two input terminals; the primary coil of the second transformer is respectively coupled to the first secondary coil of the second transformer and the second secondary coil of the second transformer, the first secondary of the second transformer The coil includes a first output terminal of the second transformer and a second output terminal of the second transformer, and a second secondary coil of the second transformer includes a third output terminal of the second transformer and the first A fourth output end of the second transformer, the primary coil of the second transformer includes a first input end of the second transformer and a second input end of the second transformer, and the third driving chip is coupled to the first A first input end of two transformers, the fourth driving chip is coupled to a second input end of the second transformer;
所述全桥式逆变电路至少包括第一MOS管、第二MOS管、第三MOS管以及第四MOS管,所述第一变压器的第一输出端通过所述第一电阻连接所述第一MOS管的栅极,所述第一MOS管的源极耦接所述第一变压器的第二输出端和所述第二MOS管的漏极,所述第一变压器的第四输出端通过所述第二电阻连接所述第二MOS管的栅极,所述第二MOS管的源极耦接所述第一变压器的第三输出端、所述第二变压器的第三输出端和所述第四MOS管的源极,所述第二变压器的第四输出端通过所述第四电阻连接所述第四MOS管的栅极,所述第四MOS管的漏极耦接所述第二变压器的第二输出端和所述第三MOS管的源极,所述第二变压器的第一输出端通过所述第三电阻连接所述第三MOS管的栅极,所述第三MOS管的漏极耦接所述第一MOS管的漏极;所述第一变压器的第一输入端和所述第一变压器的第一输出端以及第三输出端为同名端,所述第二变压器的第一输入端和所述第二变压器的第一输出端以及第三输出端为同名端。The full-bridge inverter circuit includes at least a first MOS tube, a second MOS tube, a third MOS tube, and a fourth MOS tube. The first output terminal of the first transformer is connected to the first The gate of a MOS tube, the source of the first MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube, the fourth output terminal of the first transformer passes The second resistor is connected to the gate of the second MOS tube, and the source of the second MOS tube is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer and all The source of the fourth MOS tube, the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through the fourth resistor, and the drain of the fourth MOS tube is coupled to the first A second output terminal of the second transformer and a source of the third MOS tube, a first output terminal of the second transformer is connected to the gate of the third MOS tube through the third resistor, and the third MOS The drain of the tube is coupled to the drain of the first MOS tube; the first input terminal of the first transformer and the first output terminal of the first transformer A third output terminal and the dotted terminals, a first input terminal of said second transformer and said second transformer first output terminal and third output terminal of the same name.
本申请的有益效果是:区别于现有技术的情况,本申请的第一驱动芯片耦接第一变压器的第一输入端,第二驱动芯片耦接第一变压器的第二输入端,第三驱动芯片耦接第二变压器的第一输入端,第四驱动芯片耦接第二变压器的第二输入端;第一变压器的第一输出端通过第一电阻连接第一MOS管的栅极,第一MOS管的源极耦接第一变压器的第二输出端和第二MOS管的漏极,第一变压器的第四输出端通过第二电阻连接第二MOS管的栅极,第二MOS管的源极耦接第一变压器的第三输出端、第二变压器的第三输出端和第四MOS管的源极,第二变压器的第四输出端通过第四电阻连接第四MOS管的栅极,第四MOS管的漏极耦接第二变压器的第二输出端和第三MOS管的源极,第二变压器的第一输出端通过第三电阻连接第三MOS管的栅极,第三MOS管的漏极耦接第一MOS管的漏极,由于本申请的驱动电路采用第一变压器和第二变压器隔离,即驱动电路通过第一变压器和第二变压器和全桥式逆变电路耦接,减小了信号传输延迟时间,并可传递高频信号。The beneficial effects of the present application are: different from the situation in the prior art, the first driving chip of the present application is coupled to the first input terminal of the first transformer, the second driving chip is coupled to the second input terminal of the first transformer, and the third The driving chip is coupled to the first input terminal of the second transformer, and the fourth driving chip is coupled to the second input terminal of the second transformer; the first output terminal of the first transformer is connected to the gate of the first MOS tube through the first resistor, The source of a MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube, the fourth output terminal of the first transformer is connected to the gate of the second MOS tube through the second resistor, and the second MOS tube Is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer, and the source electrode of the fourth MOS tube, and the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through a fourth resistor Electrode, the drain of the fourth MOS tube is coupled to the second output of the second transformer and the source of the third MOS tube, the first output of the second transformer is connected to the gate of the third MOS tube through a third resistor, The drain of the three MOS tube is coupled to the drain of the first MOS tube. A driving circuit using a first and second transformers isolation, i.e., a first driving circuit and second transformers and a full bridge inverter circuit is coupled to reduce the signal propagation delay time, and transmitting a high frequency signal.
【附图说明】 【Explanation】
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly explain the embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings required in the embodiments. Obviously, the drawings in the following description are only some of the applications For the embodiment, for those of ordinary skill in the art, without paying any creative labor, other drawings may be obtained based on these drawings.
图1是本申请第一实施例的驱动电路的电路图;FIG. 1 is a circuit diagram of the driving circuit of the first embodiment of the present application;
图2是本申请第二实施例的驱动电路的电路图;2 is a circuit diagram of a driving circuit of a second embodiment of the present application;
图3是本申请第一实施例的开关电源的结构示意图。3 is a schematic structural diagram of a switching power supply according to the first embodiment of the present application.
【具体实施方式】【detailed description】
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative work fall within the protection scope of the present application.
请参见图1所示,图1是本申请第一实施例的驱动电路的电路图。本实施例的驱动电路10耦接全桥式逆变电路20,用于驱动全桥式逆变电路20的MOS管。Please refer to FIG. 1, which is a circuit diagram of the driving circuit of the first embodiment of the present application. The driving circuit 10 of this embodiment is coupled to the full-bridge inverter circuit 20 and is used to drive the MOS transistor of the full-bridge inverter circuit 20.
其中,驱动电路10至少包括控制芯片11、第一驱动芯片U1、第二驱动芯片U2、第三驱动芯片U3、第四驱动芯片U4、第一变压器14、第二变压器15、第一电阻R1、第二电阻R2、第三电阻R3以及第四电阻R4。The driving circuit 10 includes at least a control chip 11, a first driving chip U1, a second driving chip U2, a third driving chip U3, a fourth driving chip U4, a first transformer 14, a second transformer 15, a first resistor R1 The second resistor R2, the third resistor R3, and the fourth resistor R4.
控制芯片11耦接第一驱动芯片U1、第二驱动芯片U2、第三驱动芯片U3和第四驱动芯片U4,其中第一驱动芯片U1可包括第一放大器121,第二驱动芯片U2可包括第二放大器122,第三驱动芯片U3可包括第三放大器123,第四驱动芯片U4可包括第四放大器124;第一放大器121的输入端与控制芯片11的第一输出端Q1连接,第二放大器122的输入端与控制芯片11的第二输出端Q2连接,第三放大器123的输入端与控制芯片11的第三输出端Q3连接,第四放大器124的输入端与控制芯片11的第四输出端Q4连接。The control chip 11 is coupled to the first driving chip U1, the second driving chip U2, the third driving chip U3, and the fourth driving chip U4, wherein the first driving chip U1 may include a first amplifier 121, and the second driving chip U2 may include a first Two amplifiers 122, the third driving chip U3 may include a third amplifier 123, the fourth driving chip U4 may include a fourth amplifier 124; the input terminal of the first amplifier 121 is connected to the first output terminal Q1 of the control chip 11, and the second amplifier The input of 122 is connected to the second output Q2 of the control chip 11, the input of the third amplifier 123 is connected to the third output Q3 of the control chip 11, and the input of the fourth amplifier 124 is connected to the fourth output of the control chip 11 Q4 connection.
第一变压器14的初级线圈分别与第一变压器14的第一次级线圈及第一变压器14的第二次级线圈耦接,第一变压器14的第一次级线圈包括第一变压器14的第一输出端及第一变压器14的第二输出端,第一变压器14的第二次级线圈包括第一变压器14的第三输出端及第一变压器14的第四输出端,第一变压器14的初级线圈包括第一变压器14的第一输入端及第一变压器14的第二输入端,第一驱动芯片U1耦接第一变压器14的第一输入端,第二驱动芯片U2耦接第一变压器14的第二输入端,即第一放大器121的输出端与第一变压器14的第一输入端连接,第二放大器122的输出端与第一变压器14的第二输入端连接。The primary coil of the first transformer 14 is coupled to the first secondary coil of the first transformer 14 and the second secondary coil of the first transformer 14 respectively. The first secondary coil of the first transformer 14 includes the first An output terminal and a second output terminal of the first transformer 14, the second secondary coil of the first transformer 14 includes a third output terminal of the first transformer 14 and a fourth output terminal of the first transformer 14, the The primary coil includes a first input end of the first transformer 14 and a second input end of the first transformer 14, the first driving chip U1 is coupled to the first input end of the first transformer 14, and the second driving chip U2 is coupled to the first transformer The second input terminal of 14, that is, the output terminal of the first amplifier 121 is connected to the first input terminal of the first transformer 14, and the output terminal of the second amplifier 122 is connected to the second input terminal of the first transformer 14.
第二变压器15的初级线圈分别与第二变压器15的第一次级线圈及第二变压器15的第二次级线圈耦接,第二变压器15的第一次级线圈包括第二变压器15的第一输出端及第二变压器15的第二输出端,第二变压器15的第二次级线圈包括第二变压器15的第三输出端及第二变压器15的第四输出端,第二变压器15的初级线圈包括第二变压器15的第一输入端及第二变压器15的第二输入端,第三驱动芯片U3耦接第二变压器15的第一输入端,第四驱动芯片U4耦接第二变压器15的第二输入端,即第三放大器123的输出端与第二变压器15的第一输入端连接,第四放大器124的输出端与第二变压器15的第二输入端连接。The primary coil of the second transformer 15 is coupled to the first secondary coil of the second transformer 15 and the second secondary coil of the second transformer 15 respectively. The first secondary coil of the second transformer 15 includes the first An output terminal and a second output terminal of the second transformer 15, the second secondary coil of the second transformer 15 includes a third output terminal of the second transformer 15 and a fourth output terminal of the second transformer 15, The primary coil includes a first input terminal of the second transformer 15 and a second input terminal of the second transformer 15, the third driving chip U3 is coupled to the first input terminal of the second transformer 15, and the fourth driving chip U4 is coupled to the second transformer The second input terminal of 15, that is, the output terminal of the third amplifier 123 is connected to the first input terminal of the second transformer 15, and the output terminal of the fourth amplifier 124 is connected to the second input terminal of the second transformer 15.
控制芯片11的第一输出端Q1输出的逻辑信号通过第一放大器121放大后输入至第一变压器14的第一输入端,控制芯片11的第二输出端Q2输出的逻辑信号通过第二放大器122放大后输入至第一变压器14的第二输入端,控制芯片11的第三输出端Q3输出的逻辑信号通过第三放大器131放大后输入至第二变压器15的第一输入端,控制芯片11的第四输出端Q4输出的逻辑信号通过第四放大器132放大后输入至第二变压器15的第二输入端。The logic signal output from the first output terminal Q1 of the control chip 11 is amplified by the first amplifier 121 and input to the first input terminal of the first transformer 14, and the logic signal output from the second output terminal Q2 of the control chip 11 passes through the second amplifier 122 After being amplified and input to the second input terminal of the first transformer 14, the logic signal output from the third output terminal Q3 of the control chip 11 is amplified and input to the first input terminal of the second transformer 15 through the third amplifier 131 to control the The logic signal output from the fourth output terminal Q4 is amplified by the fourth amplifier 132 and input to the second input terminal of the second transformer 15.
全桥式逆变电路20至少包括第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4。第一变压器14的第一输出端通过第一电阻R1连接第一MOS管T1的栅极,第一MOS管T1的源极耦接第一变压器14的第二输出端和第二MOS管T2的漏极;第一变压器14的第四输出端通过第二电阻R2连接第二MOS管T2的栅极,第二MOS管T2的源极耦接第一变压器14的第三输出端、第二变压器15的第三输出端和第四MOS管T4的源极;第二变压器15的第四输出端通过第四电阻R4连接第四MOS管T4的栅极,第四MOS管T4的漏极耦接第二变压器15的第二输出端和第三MOS管T3的源极;第二变压器15的第一输出端通过第三电阻R3连接第三MOS管T3的栅极,第三MOS管T3的漏极耦接第一MOS管T1的漏极。The full-bridge inverter circuit 20 includes at least a first MOS tube T1, a second MOS tube T2, a third MOS tube T3, and a fourth MOS tube T4. The first output terminal of the first transformer 14 is connected to the gate of the first MOS transistor T1 through a first resistor R1, and the source of the first MOS transistor T1 is coupled to the second output terminal of the first transformer 14 and the second MOS transistor T2 Drain; the fourth output of the first transformer 14 is connected to the gate of the second MOS transistor T2 through a second resistor R2, the source of the second MOS transistor T2 is coupled to the third output of the first transformer 14, the second transformer The third output terminal of 15 and the source of the fourth MOS transistor T4; the fourth output terminal of the second transformer 15 is connected to the gate of the fourth MOS transistor T4 through a fourth resistor R4, and the drain of the fourth MOS transistor T4 is coupled The second output terminal of the second transformer 15 and the source of the third MOS transistor T3; the first output terminal of the second transformer 15 is connected to the gate of the third MOS transistor T3 through the third resistor R3, and the drain of the third MOS transistor T3 The pole is coupled to the drain of the first MOS transistor T1.
其中,第一变压器14的第一输入端和第一变压器14的第一输出端以及第三输出端为同名端,第二变压器15的第一输入端和第二变压器15的第一输出端以及第三输出端为同名端。在其他实施例中,第一变压器14的第一输入端可以和第一变压器14的第二输出端以及第四输出端为同名端;第二变压器15的第一输入端可以和第二变压器15的第二输出端以及第四输出端为同名端,以使与第一MOS管T1与第二MOS管T2分别相连的输出绕组同向绕制即可。Among them, the first input terminal of the first transformer 14 and the first output terminal and the third output terminal of the first transformer 14 have the same name, the first input terminal of the second transformer 15 and the first output terminal of the second transformer 15 and The third output is the same name. In other embodiments, the first input end of the first transformer 14 may be the same name as the second output end and the fourth output end of the first transformer 14; the first input end of the second transformer 15 may be the same as the second transformer 15 The second output terminal and the fourth output terminal have the same name, so that the output windings connected to the first MOS tube T1 and the second MOS tube T2 can be wound in the same direction.
全桥式逆变电路20还可以包括第一电容C1、第二电容C2、第三电容C3、第四电容C4、第十三电阻R13、第十四电阻R14、第十五电阻R15以及第十六电阻R16;第一电容C1的一端、第二电容C2的一端、第十三电阻R13的一端以及第十四电阻R14的一端连接第一MOS管T1的源极;第三电容C3的一端、第四电容C4的一端、第十五电阻R15的一端以及第十六电阻R16的一端连接第三MOS管的源极;第一电容C1的另一端、第十三电阻R13的另一端、第三电容C3的另一端以及第十五电阻R15的另一端连接第一MOS管T1的漏极;第二电容C2的另一端、第四电容C4的另一端、第十四电阻R14的另一端以及第十六电阻R16的另一端连接第二MOS管T2的源极。其中,第十三电阻R13、第十四电阻R14、第十五电阻R15以及第十六电阻R16分别起分压作用,以分别调节第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4两端的电压,第一电容C1、第二电容C2、第三电容C3、第四电容C4用于消除开关所各自并联的MOS管时所产生的电压尖峰,以保护MOS管。The full-bridge inverter circuit 20 may further include a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, and a tenth Six resistors R16; one end of the first capacitor C1, one end of the second capacitor C2, one end of the thirteenth resistor R13 and one end of the fourteenth resistor R14 are connected to the source of the first MOS transistor T1; one end of the third capacitor C3, One end of the fourth capacitor C4, one end of the fifteenth resistor R15 and one end of the sixteenth resistor R16 are connected to the source of the third MOS tube; the other end of the first capacitor C1, the other end of the thirteenth resistor R13, the third The other end of the capacitor C3 and the other end of the fifteenth resistor R15 are connected to the drain of the first MOS transistor T1; the other end of the second capacitor C2, the other end of the fourth capacitor C4, the other end of the fourteenth resistor R14 and the first The other end of the sixteen resistor R16 is connected to the source of the second MOS transistor T2. Among them, the thirteenth resistor R13, the fourteenth resistor R14, the fifteenth resistor R15 and the sixteenth resistor R16 respectively play a voltage dividing role to adjust the first MOS tube T1, the second MOS tube T2, the third MOS tube The voltage across T3 and the fourth MOS transistor T4. The first capacitor C1, the second capacitor C2, the third capacitor C3, and the fourth capacitor C4 are used to eliminate voltage spikes generated when the switches are connected in parallel to protect the MOS. tube.
其中,第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4均为P型MOS管。在其他实施例中,第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4可以为其他MOS管,例如第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4均为N型MOS管。The first MOS tube T1, the second MOS tube T2, the third MOS tube T3, and the fourth MOS tube T4 are all P-type MOS tubes. In other embodiments, the first MOS tube T1, the second MOS tube T2, the third MOS tube T3, and the fourth MOS tube T4 may be other MOS tubes, such as the first MOS tube T1, the second MOS tube T2, the third Both the MOS tube T3 and the fourth MOS tube T4 are N-type MOS tubes.
以下描述本实施例驱动电路10驱动全桥式逆变电路20的工作原理:The following describes the working principle of the driving circuit 10 driving the full-bridge inverter circuit 20 of this embodiment:
在第一变压器14的第一输入端接收到的逻辑信号流向第一变压器14的第二输入端时,此时第一变压器14的第一输出端控制第一MOS管T1导通,第二MOS管T2断开;在第二变压器15的第一输入端接收到的逻辑信号流向第二变压器15的第二输入端时,此时第二变压器15的第一输出端控制第三MOS管T3导通,第四MOS管T4断开。When the logic signal received by the first input terminal of the first transformer 14 flows to the second input terminal of the first transformer 14, the first output terminal of the first transformer 14 controls the first MOS transistor T1 to turn on, and the second MOS The tube T2 is disconnected; when the logic signal received at the first input terminal of the second transformer 15 flows to the second input terminal of the second transformer 15, the first output terminal of the second transformer 15 controls the third MOS transistor T3 to conduct On, the fourth MOS transistor T4 is off.
在第一变压器14的第二输入端接收到的逻辑信号流向第一变压器14的第一输入端时,此时第一MOS管T1断开,第一变压器14的第四输出端146控制第二MOS管T2导通;在第二变压器15的第二输入端接收到的逻辑信号流向第二变压器15的第一输入端时,此时第三MOS管T3断开,第二变压器15的第四输出端控制第四MOS管T4导通。When the logic signal received by the second input terminal of the first transformer 14 flows to the first input terminal of the first transformer 14, the first MOS transistor T1 is disconnected, and the fourth output terminal 146 of the first transformer 14 controls the second The MOS transistor T2 is turned on; when the logic signal received at the second input terminal of the second transformer 15 flows to the first input terminal of the second transformer 15, the third MOS transistor T3 is disconnected, and the fourth of the second transformer 15 The output terminal controls the fourth MOS transistor T4 to be turned on.
其中,第一电阻R1、第二电阻R2、第三电阻R3和第四电阻R4为驱动电阻,其作用为抑制震荡,及限制电流。驱动电阻对MOSFET开通过程影响较大,驱动电阻小有利于加快关断速度,减小关断损耗,但会造成di/dt过大,产生较大的集电极电压尖峰因此需要合理设置第一电阻R1、第二电阻R2、第三电阻R3和第四电阻R4的阻值,优选地,均可设置为60-90欧姆,进而保证第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4的驱动电流,并且避免第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4的驱动电压过高。Among them, the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are driving resistors, and their functions are to suppress oscillation and limit the current. The driving resistance has a great influence on the MOSFET turn-on process. The small driving resistance is helpful to accelerate the turn-off speed and reduce the turn-off loss, but it will cause excessive di / dt and produce a large collector voltage spike. Therefore, it is necessary to set the first resistor reasonably The resistance values of R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are preferably set to 60-90 ohms, thereby ensuring the first MOS tube T1, the second MOS tube T2 and the third MOS tube The driving current of T3 and the fourth MOS tube T4, and to avoid the driving voltage of the first MOS tube T1, the second MOS tube T2, the third MOS tube T3 and the fourth MOS tube T4 is too high.
本实施例的第一驱动芯片U1和第二驱动芯片U2通过第一变压器14隔离驱动全桥式逆变电路20的第一MOS管T1和第二MOS管T2,第三驱动芯片U3和第四驱动芯片U4通过第二变压器15隔离驱动全桥式逆变电路20的第三MOS管T3和第四MOS管T4,能够实现隔离驱动,结构简单,降低成本,第一变压器14和第二变压器15传输信号的延迟时间小,适合传递高频信号;此外,与第一MOS管T1与第二MOS管T2分别相连的输出绕组同向绕制,但两路输出反向接入第一MOS管T1与第二MOS管T2的栅极,实现全桥式逆变电路20的同一桥臂上的MOS管反向,使第一MOS管T1和第二MOS管T2不会同时导通,同理,第三MOS管T3和第四MOS管T4也不会同时导通,从而防止全桥式逆变电路20短路。可以理解的是,由于在关断MOS管的过程中,存在拖尾效应,即关断时间比开通时间相对较长,为了进一步防止同一桥臂的上下两个MOS管同时导通,可设置一定的死区时间,即同一桥臂的上下两个MOS管的导通和关断错开一定的时间,设置死区时间的技术方案有多种,如延时导通以及提前导通补偿等,由于设置死区时间的技术方案为现有技术,且非本案的重点内容,故不在此展开叙述。The first driving chip U1 and the second driving chip U2 of this embodiment isolate and drive the first MOS transistor T1 and the second MOS transistor T2 of the full-bridge inverter circuit 20 through the first transformer 14, and the third driving chip U3 and the fourth The driving chip U4 isolates and drives the third MOS transistor T3 and the fourth MOS transistor T4 of the full-bridge inverter circuit 20 through the second transformer 15, which can realize the isolated driving. The structure is simple and the cost is reduced. The first transformer 14 and the second transformer 15 The delay time of the transmission signal is small, suitable for transmitting high-frequency signals; in addition, the output windings connected to the first MOS tube T1 and the second MOS tube T2 are wound in the same direction, but the two outputs are reversely connected to the first MOS tube T1 With the gate of the second MOS tube T2, the MOS tube on the same bridge arm of the full-bridge inverter circuit 20 is reversed, so that the first MOS tube T1 and the second MOS tube T2 will not be turned on at the same time. The third MOS transistor T3 and the fourth MOS transistor T4 will not be turned on at the same time, thereby preventing the full-bridge inverter circuit 20 from being short-circuited. It is understandable that due to the tailing effect in the process of turning off the MOS tube, that is, the turn-off time is relatively longer than the turn-on time, in order to further prevent the upper and lower MOS tubes of the same bridge arm from turning on at the same time, a certain Dead time, that is, the turn-on and turn-off of the upper and lower MOS tubes of the same bridge arm are staggered by a certain time. There are many technical solutions for setting the dead time, such as delayed turn-on and early turn-on compensation. The technical solution for setting the dead time is the existing technology and is not the focus of this case, so it will not be described here.
本申请进一步提供第二实施例的驱动电路,其在第一实施例所揭示的驱动电路10的基础上进行描述。如图2所示,本实施例的驱动电路10进一步包括第五电阻R5、第六电阻R6、第七电阻R7、第八电阻R8、第一二极管D1、第二二极管D2、第三二极管D3、第四二极管D4、第九电阻R9、第十电阻R10、第十一电阻R11和第十二电阻R12。The present application further provides the driving circuit of the second embodiment, which is described on the basis of the driving circuit 10 disclosed in the first embodiment. As shown in FIG. 2, the driving circuit 10 of this embodiment further includes a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a first diode D1, a second diode D2, a first Three diodes D3, fourth diodes D4, ninth resistor R9, tenth resistor R10, eleventh resistor R11 and twelfth resistor R12.
其中,第一二极管D1的正极通过第五电阻R5连接第一MOS管T1的栅极,第一二极管D1的负极连接第一变压器14的第一输出端;第二二极管D2的正极通过第六电阻R6连接第二MOS管T2的栅极,第二二极管D2的负极连接第一变压器14的第四输出端;第三二极管D3的正极通过第七电阻R7连接第三MOS管T3的栅极,第三二极管D3的负极连接第二变压器15的第一输出端;第四二极管D4的正极通过第八电阻R8连接第四MOS管T4的栅极,第四二极管D4的负极连接第二变压器15的第四输出端。The anode of the first diode D1 is connected to the gate of the first MOS transistor T1 through a fifth resistor R5, and the cathode of the first diode D1 is connected to the first output of the first transformer 14; the second diode D2 The anode of the second diode is connected to the gate of the second MOS transistor T2 through a sixth resistor R6, the cathode of the second diode D2 is connected to the fourth output terminal of the first transformer 14; the anode of the third diode D3 is connected through the seventh resistor R7 The gate of the third MOS transistor T3, the cathode of the third diode D3 is connected to the first output terminal of the second transformer 15; the anode of the fourth diode D4 is connected to the gate of the fourth MOS transistor T4 through the eighth resistor R8 The cathode of the fourth diode D4 is connected to the fourth output terminal of the second transformer 15.
其中,第五电阻R5和第一二极管D1构成第一MOS管T1的放电回路,第六电阻R6和第二二极管D2构成第二MOS管T2的放电回路,第七电阻R7和第三二极管D3构成第三MOS管T3的放电回路,第八电阻R8和第四二极管D4构成第四MOS管T4的放电回路。第五电阻R5的阻值小于第一电阻R1的阻值,第六电阻R6的阻值小于第二电阻R2的阻值,第七电阻R7的阻值小于第三电阻R3的阻值,第八电阻R8的阻值小于第四电阻R4的阻值,因此第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4能够快速放电,提升关断速度。例如,第五电阻R5、第六电阻R6、第七电阻R7和第八电阻R8的电阻值均可设置为10-30欧姆。Among them, the fifth resistor R5 and the first diode D1 constitute the discharge circuit of the first MOS transistor T1, the sixth resistor R6 and the second diode D2 constitute the discharge circuit of the second MOS transistor T2, the seventh resistor R7 and the first The three diodes D3 constitute the discharge circuit of the third MOS transistor T3, and the eighth resistor R8 and the fourth diode D4 constitute the discharge circuit of the fourth MOS transistor T4. The resistance of the fifth resistor R5 is smaller than that of the first resistor R1, the resistance of the sixth resistor R6 is smaller than that of the second resistor R2, the resistance of the seventh resistor R7 is smaller than that of the third resistor R3, the eighth The resistance of the resistor R8 is smaller than the resistance of the fourth resistor R4, so the first MOS transistor T1, the second MOS transistor T2, the third MOS transistor T3, and the fourth MOS transistor T4 can quickly discharge, increasing the turn-off speed. For example, the resistance values of the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, and the eighth resistor R8 can all be set to 10-30 ohms.
其中,第一驱动芯片U1通过第九电阻R9连接第一变压器14的第一输入端,第二驱动芯片U2通过第十电阻R10连接第一变压器14的第二输入端,第三驱动芯片U3通过第十一电阻R11连接第二变压器15的第一输入端,第四驱动芯片U4通过第十二电阻R12连接第二变压器15的第二输入端。The first driving chip U1 is connected to the first input terminal of the first transformer 14 through a ninth resistor R9, the second driving chip U2 is connected to the second input terminal of the first transformer 14 through a tenth resistor R10, and the third driving chip U3 is connected through The eleventh resistor R11 is connected to the first input terminal of the second transformer 15, and the fourth driving chip U4 is connected to the second input terminal of the second transformer 15 through the twelfth resistor R12.
相对于第一实施例的驱动电路,本实施例的第五电阻R5和第一二极管D1构成第一MOS管T1的放电回路,第六电阻R6和第二二极管D2构成第二MOS管T2的放电回路,第七电阻R7和第三二极管D3构成第三MOS管T3的放电回路,第八电阻R8和第四二极管D4构成第四MOS管T4的放电回路,可实现第一MOS管T1、第二MOS管T2、第三MOS管T3以及第四MOS管T4快速放电,提升关断速度。Compared with the drive circuit of the first embodiment, the fifth resistor R5 and the first diode D1 of this embodiment constitute the discharge circuit of the first MOS transistor T1, and the sixth resistor R6 and the second diode D2 constitute the second MOS The discharge circuit of the tube T2, the seventh resistor R7 and the third diode D3 constitute the discharge circuit of the third MOS tube T3, and the eighth resistor R8 and the fourth diode D4 constitute the discharge circuit of the fourth MOS tube T4. The first MOS tube T1, the second MOS tube T2, the third MOS tube T3, and the fourth MOS tube T4 are quickly discharged to increase the turn-off speed.
本申请还提供一种开关电源30,如图3所示,本实施例所揭示的开关电源30包括驱动电路31,该驱动电路31为上述实施例所揭示的驱动电路,在此不再赘述。The present application also provides a switching power supply 30. As shown in FIG. 3, the switching power supply 30 disclosed in this embodiment includes a driving circuit 31. The driving circuit 31 is the driving circuit disclosed in the foregoing embodiment, and details are not described herein again.
以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。The above are only the embodiments of the present application, and therefore do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by the description and drawings of this application, or directly or indirectly used in other related technologies In the field, the same reason is included in the scope of patent protection of this application.

Claims (10)

  1. 一种驱动电路,其特征在于,所述驱动电路耦接全桥式逆变电路,所述驱动电路至少包括控制芯片、第一驱动芯片、第二驱动芯片、第三驱动芯片、第四驱动芯片、第一电阻、第二电阻、第三电阻、第四电阻、第一变压器和第二变压器,所述控制芯片耦接所述第一驱动芯片、所述第二驱动芯片、所述第三驱动芯片和所述第四驱动芯片,所述第一变压器的初级线圈分别与所述第一变压器的第一次级线圈及所述第一变压器的第二次级线圈耦接,所述第一变压器的第一次级线圈包括所述第一变压器的第一输出端及所述第一变压器的第二输出端,所述第一变压器的第二次级线圈包括所述第一变压器的第三输出端及所述第一变压器的第四输出端,所述第一变压器的初级线圈包括所述第一变压器的第一输入端及所述第一变压器的第二输入端,所述第一驱动芯片耦接所述第一变压器的第一输入端,所述第二驱动芯片耦接所述第一变压器的第二输入端;所述第二变压器的初级线圈分别与所述第二变压器的第一次级线圈及所述第二变压器的第二次级线圈耦接,所述第二变压器的第一次级线圈包括所述第二变压器的第一输出端及所述第二变压器的第二输出端,所述第二变压器的第二次级线圈包括所述第二变压器的第三输出端及所述第二变压器的第四输出端,所述第二变压器的初级线圈包括所述第二变压器的第一输入端及所述第二变压器的第二输入端,所述第三驱动芯片耦接所述第二变压器的第一输入端,所述第四驱动芯片耦接所述第二变压器的第二输入端;A driving circuit, characterized in that the driving circuit is coupled to a full-bridge inverter circuit, and the driving circuit at least includes a control chip, a first driving chip, a second driving chip, a third driving chip, and a fourth driving chip , A first resistor, a second resistor, a third resistor, a fourth resistor, a first transformer and a second transformer, the control chip is coupled to the first drive chip, the second drive chip, the third drive Chip and the fourth driving chip, the primary coil of the first transformer is respectively coupled to the first secondary coil of the first transformer and the second secondary coil of the first transformer, the first transformer Of the first secondary coil includes the first output of the first transformer and the second output of the first transformer, the second secondary coil of the first transformer includes the third output of the first transformer Terminal and the fourth output terminal of the first transformer, the primary coil of the first transformer includes a first input terminal of the first transformer and a second input terminal of the first transformer, the first driver chip Connected to the first input end of the first transformer, the second driving chip is coupled to the second input end of the first transformer; the primary coil of the second transformer is respectively connected to the first time of the second transformer Primary coil and the second secondary coil of the second transformer, the first secondary coil of the second transformer includes a first output terminal of the second transformer and a second output terminal of the second transformer , The second secondary coil of the second transformer includes a third output terminal of the second transformer and a fourth output terminal of the second transformer, and the primary coil of the second transformer includes the The first input terminal and the second input terminal of the second transformer, the third driving chip is coupled to the first input terminal of the second transformer, and the fourth driving chip is coupled to the first input terminal of the second transformer Two input terminals;
    所述全桥式逆变电路至少包括第一MOS管、第二MOS管、第三MOS管以及第四MOS管,所述第一变压器的第一输出端通过所述第一电阻连接所述第一MOS管的栅极,所述第一MOS管的源极耦接所述第一变压器的第二输出端和所述第二MOS管的漏极,所述第一变压器的第四输出端通过所述第二电阻连接所述第二MOS管的栅极,所述第二MOS管的源极耦接所述第一变压器的第三输出端、所述第二变压器的第三输出端和所述第四MOS管的源极,所述第二变压器的第四输出端通过所述第四电阻连接所述第四MOS管的栅极,所述第四MOS管的漏极耦接所述第二变压器的第二输出端和所述第三MOS管的源极,所述第二变压器的第一输出端通过所述第三电阻连接所述第三MOS管的栅极,所述第三MOS管的漏极耦接所述第一MOS管的漏极;所述第一变压器的第一输入端和所述第一变压器的第一输出端以及第三输出端为同名端,所述第二变压器的第一输入端和所述第二变压器的第一输出端以及第三输出端为同名端。The full-bridge inverter circuit includes at least a first MOS tube, a second MOS tube, a third MOS tube, and a fourth MOS tube. The first output terminal of the first transformer is connected to the first The gate of a MOS tube, the source of the first MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube, the fourth output terminal of the first transformer passes The second resistor is connected to the gate of the second MOS tube, and the source of the second MOS tube is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer and all The source of the fourth MOS tube, the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through the fourth resistor, and the drain of the fourth MOS tube is coupled to the first A second output terminal of the second transformer and a source of the third MOS tube, a first output terminal of the second transformer is connected to the gate of the third MOS tube through the third resistor, and the third MOS The drain of the tube is coupled to the drain of the first MOS tube; the first input terminal of the first transformer and the first output terminal of the first transformer A third output terminal and the dotted terminals, a first input terminal of said second transformer and said second transformer first output terminal and third output terminal of the same name.
  2. 根据权利要求1所述的驱动电路,其特征在于,所述驱动电路还包括第一二极管、第二二极管、第三二极管、第四二极管、第五电阻、第六电阻、第七电阻和第八电阻,所述第一二极管的正极通过所述第五电阻连接所述第一MOS管的栅极,所述第一二极管的负极连接所述第一变压器的第一输出端;所述第二二极管的正极通过所述第六电阻连接所述第二MOS管的栅极,所述第二二极管的负极连接所述第一变压器的第四输出端;所述第三二极管的正极通过所述第七电阻连接所述第三MOS管的栅极,所述第三二极管的负极连接所述第二变压器的第一输出端;所述第四二极管的正极通过所述第八电阻连接所述第四MOS管的栅极,所述第四二极管的负极连接所述第二变压器的第四输出端。The driving circuit according to claim 1, wherein the driving circuit further comprises a first diode, a second diode, a third diode, a fourth diode, a fifth resistor, a sixth A resistor, a seventh resistor, and an eighth resistor, the anode of the first diode is connected to the gate of the first MOS tube through the fifth resistor, and the cathode of the first diode is connected to the first The first output of the transformer; the anode of the second diode is connected to the gate of the second MOS tube through the sixth resistor, and the cathode of the second diode is connected to the first of the first transformer Four output terminals; the anode of the third diode is connected to the gate of the third MOS tube through the seventh resistor, and the cathode of the third diode is connected to the first output terminal of the second transformer The anode of the fourth diode is connected to the gate of the fourth MOS tube through the eighth resistor, and the cathode of the fourth diode is connected to the fourth output end of the second transformer.
  3. 根据权利要求2所述的驱动电路,其特征在于,所述第五电阻的阻值小于所述第一电阻的阻值,所述第六电阻的阻值小于所述第二电阻的阻值,所述第七电阻的阻值小于所述第三电阻的阻值,所述第八电阻的阻值小于所述第四电阻的阻值。The driving circuit according to claim 2, wherein the resistance of the fifth resistor is smaller than the resistance of the first resistor, and the resistance of the sixth resistor is smaller than the resistance of the second resistor, The resistance of the seventh resistor is less than the resistance of the third resistor, and the resistance of the eighth resistor is less than the resistance of the fourth resistor.
  4. 根据权利要求2所述的驱动电路,其特征在于,所述驱动电路还包括第九电阻、第十电阻、第十一电阻和第十二电阻,所述第一驱动芯片通过所述第九电阻连接所述第一变压器的第一输入端,所述第二驱动芯片通过所述第十电阻连接所述第一变压器的第二输入端,所述第三驱动芯片通过所述第十一电阻连接所述第二变压器的第一输入端,所述第四驱动芯片通过所述第十二电阻连接所述第二变压器的第二输入端。The driving circuit according to claim 2, wherein the driving circuit further comprises a ninth resistance, a tenth resistance, an eleventh resistance and a twelfth resistance, and the first driving chip passes the ninth resistance Connected to the first input terminal of the first transformer, the second driver chip is connected to the second input terminal of the first transformer through the tenth resistor, and the third driver chip is connected through the eleventh resistor The first input terminal of the second transformer, the fourth driving chip is connected to the second input terminal of the second transformer through the twelfth resistor.
  5. 根据权利要求1所述的驱动电路,其特征在于,所述全桥式逆变电路还包括第一电容、第二电容、第三电容、第四电容、第十三电阻、第十四电阻、第十五电阻以及第十六电阻,所述第一电容的一端、所述第二电容的一端、所述第十三电阻的一端以及所述第十四电阻的一端连接所述第一MOS管的源极;所述第三电容的一端、所述第四电容的一端、所述第十五电阻的一端以及所述第十六电阻的一端连接所述第三MOS管的源极;所述第一电容的另一端、所述第十三电阻的另一端、所述第三电容的另一端以及所述第十五电阻的另一端连接所述第一MOS管的漏极;所述第二电容的另一端、所述第四电容的另一端、所述第十四电阻的另一端以及所述第十六电阻的另一端连接所述第二MOS管的源极。The driving circuit according to claim 1, wherein the full-bridge inverter circuit further includes a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a thirteenth resistor, a fourteenth resistor, A fifteenth resistor and a sixteenth resistor, one end of the first capacitor, one end of the second capacitor, one end of the thirteenth resistor and one end of the fourteenth resistor are connected to the first MOS tube The source of the third capacitor, the end of the fourth capacitor, the end of the fifteenth resistor, and the end of the sixteenth resistor connected to the source of the third MOS tube; The other end of the first capacitor, the other end of the thirteenth resistor, the other end of the third capacitor, and the other end of the fifteenth resistor are connected to the drain of the first MOS tube; the second The other end of the capacitor, the other end of the fourth capacitor, the other end of the fourteenth resistor, and the other end of the sixteenth resistor are connected to the source of the second MOS tube.
  6. 一种开关电源,其特征在于,所述开关电源包括驱动电路,所述驱动电路耦接全桥式逆变电路,所述驱动电路至少包括控制芯片、第一驱动芯片、第二驱动芯片、第三驱动芯片、第四驱动芯片、第一电阻、第二电阻、第三电阻、第四电阻、第一变压器和第二变压器,所述控制芯片耦接所述第一驱动芯片、所述第二驱动芯片、所述第三驱动芯片和所述第四驱动芯片,所述第一变压器的初级线圈分别与所述第一变压器的第一次级线圈及所述第一变压器的第二次级线圈耦接,所述第一变压器的第一次级线圈包括所述第一变压器的第一输出端及所述第一变压器的第二输出端,所述第一变压器的第二次级线圈包括所述第一变压器的第三输出端及所述第一变压器的第四输出端,所述第一变压器的初级线圈包括所述第一变压器的第一输入端及所述第一变压器的第二输入端,所述第一驱动芯片耦接所述第一变压器的第一输入端,所述第二驱动芯片耦接所述第一变压器的第二输入端;所述第二变压器的初级线圈分别与所述第二变压器的第一次级线圈及所述第二变压器的第二次级线圈耦接,所述第二变压器的第一次级线圈包括所述第二变压器的第一输出端及所述第二变压器的第二输出端,所述第二变压器的第二次级线圈包括所述第二变压器的第三输出端及所述第二变压器的第四输出端,所述第二变压器的初级线圈包括所述第二变压器的第一输入端及所述第二变压器的第二输入端,所述第三驱动芯片耦接所述第二变压器的第一输入端,所述第四驱动芯片耦接所述第二变压器的第二输入端;A switching power supply, characterized in that the switching power supply includes a driving circuit, the driving circuit is coupled to a full-bridge inverter circuit, the driving circuit at least includes a control chip, a first driving chip, a second driving chip, a Three driving chips, a fourth driving chip, a first resistor, a second resistor, a third resistor, a fourth resistor, a first transformer and a second transformer, the control chip is coupled to the first driving chip and the second A driving chip, the third driving chip and the fourth driving chip, the primary coil of the first transformer and the first secondary coil of the first transformer and the second secondary coil of the first transformer respectively Coupling, the first secondary coil of the first transformer includes a first output terminal of the first transformer and a second output terminal of the first transformer, the second secondary coil of the first transformer includes all A third output terminal of the first transformer and a fourth output terminal of the first transformer, a primary coil of the first transformer includes a first input terminal of the first transformer and a first output terminal of the first transformer At the input end, the first driving chip is coupled to the first input end of the first transformer, and the second driving chip is coupled to the second input end of the first transformer; the primary coils of the second transformer are respectively Coupled to the first secondary coil of the second transformer and the second secondary coil of the second transformer, the first secondary coil of the second transformer includes the first output end of the second transformer and A second output terminal of the second transformer, a second secondary coil of the second transformer includes a third output terminal of the second transformer and a fourth output terminal of the second transformer, the second transformer The primary coil includes a first input end of the second transformer and a second input end of the second transformer, the third driving chip is coupled to the first input end of the second transformer, and the fourth drive The chip is coupled to the second input end of the second transformer;
    所述全桥式逆变电路至少包括第一MOS管、第二MOS管、第三MOS管以及第四MOS管,所述第一变压器的第一输出端通过所述第一电阻连接所述第一MOS管的栅极,所述第一MOS管的源极耦接所述第一变压器的第二输出端和所述第二MOS管的漏极,所述第一变压器的第四输出端通过所述第二电阻连接所述第二MOS管的栅极,所述第二MOS管的源极耦接所述第一变压器的第三输出端、所述第二变压器的第三输出端和所述第四MOS管的源极,所述第二变压器的第四输出端通过所述第四电阻连接所述第四MOS管的栅极,所述第四MOS管的漏极耦接所述第二变压器的第二输出端和所述第三MOS管的源极,所述第二变压器的第一输出端通过所述第三电阻连接所述第三MOS管的栅极,所述第三MOS管的漏极耦接所述第一MOS管的漏极;所述第一变压器的第一输入端和所述第一变压器的第一输出端以及第三输出端为同名端,所述第二变压器的第一输入端和所述第二变压器的第一输出端以及第三输出端为同名端。The full-bridge inverter circuit includes at least a first MOS tube, a second MOS tube, a third MOS tube, and a fourth MOS tube. The first output terminal of the first transformer is connected to the first The gate of a MOS tube, the source of the first MOS tube is coupled to the second output terminal of the first transformer and the drain of the second MOS tube, the fourth output terminal of the first transformer passes The second resistor is connected to the gate of the second MOS tube, and the source of the second MOS tube is coupled to the third output terminal of the first transformer, the third output terminal of the second transformer and all The source of the fourth MOS tube, the fourth output terminal of the second transformer is connected to the gate of the fourth MOS tube through the fourth resistor, and the drain of the fourth MOS tube is coupled to the first A second output terminal of the second transformer and a source of the third MOS tube, a first output terminal of the second transformer is connected to the gate of the third MOS tube through the third resistor, and the third MOS The drain of the tube is coupled to the drain of the first MOS tube; the first input terminal of the first transformer and the first output terminal of the first transformer A third output terminal and the dotted terminals, a first input terminal of said second transformer and said second transformer first output terminal and third output terminal of the same name.
  7. 根据权利要求6所述的开关电源,其特征在于,所述驱动电路还包括第一二极管、第二二极管、第三二极管、第四二极管、第五电阻、第六电阻、第七电阻和第八电阻,所述第一二极管的正极通过所述第五电阻连接所述第一MOS管的栅极,所述第一二极管的负极连接所述第一变压器的第一输出端;所述第二二极管的正极通过所述第六电阻连接所述第二MOS管的栅极,所述第二二极管的负极连接所述第一变压器的第四输出端;所述第三二极管的正极通过所述第七电阻连接所述第三MOS管的栅极,所述第三二极管的负极连接所述第二变压器的第一输出端;所述第四二极管的正极通过所述第八电阻连接所述第四MOS管的栅极,所述第四二极管的负极连接所述第二变压器的第四输出端。The switching power supply according to claim 6, wherein the driving circuit further comprises a first diode, a second diode, a third diode, a fourth diode, a fifth resistor, a sixth A resistor, a seventh resistor, and an eighth resistor, the anode of the first diode is connected to the gate of the first MOS tube through the fifth resistor, and the cathode of the first diode is connected to the first The first output of the transformer; the anode of the second diode is connected to the gate of the second MOS tube through the sixth resistor, and the cathode of the second diode is connected to the first of the first transformer Four output terminals; the anode of the third diode is connected to the gate of the third MOS tube through the seventh resistor, and the cathode of the third diode is connected to the first output terminal of the second transformer The anode of the fourth diode is connected to the gate of the fourth MOS tube through the eighth resistor, and the cathode of the fourth diode is connected to the fourth output end of the second transformer.
  8. 根据权利要求7所述的开关电源,其特征在于,所述第五电阻的阻值小于所述第一电阻的阻值,所述第六电阻的阻值小于所述第二电阻的阻值,所述第七电阻的阻值小于所述第三电阻的阻值,所述第八电阻的阻值小于所述第四电阻的阻值。The switching power supply according to claim 7, wherein the resistance of the fifth resistor is smaller than the resistance of the first resistor, and the resistance of the sixth resistor is smaller than the resistance of the second resistor, The resistance of the seventh resistor is less than the resistance of the third resistor, and the resistance of the eighth resistor is less than the resistance of the fourth resistor.
  9. 根据权利要求7所述的开关电源,其特征在于,所述驱动电路还包括第九电阻、第十电阻、第十一电阻和第十二电阻,所述第一驱动芯片通过所述第九电阻连接所述第一变压器的第一输入端,所述第二驱动芯片通过所述第十电阻连接所述第一变压器的第二输入端,所述第三驱动芯片通过所述第十一电阻连接所述第二变压器的第一输入端,所述第四驱动芯片通过所述第十二电阻连接所述第二变压器的第二输入端。The switching power supply according to claim 7, wherein the driving circuit further comprises a ninth resistor, a tenth resistor, an eleventh resistor and a twelfth resistor, and the first driving chip passes the ninth resistor Connected to the first input terminal of the first transformer, the second driver chip is connected to the second input terminal of the first transformer through the tenth resistor, and the third driver chip is connected through the eleventh resistor The first input terminal of the second transformer, the fourth driving chip is connected to the second input terminal of the second transformer through the twelfth resistor.
  10. 根据权利要求6所述的开关电源,其特征在于,所述全桥式逆变电路还包括第一电容、第二电容、第三电容、第四电容、第十三电阻、第十四电阻、第十五电阻以及第十六电阻,所述第一电容的一端、所述第二电容的一端、所述第十三电阻的一端以及所述第十四电阻的一端连接所述第一MOS管的源极;所述第三电容的一端、所述第四电容的一端、所述第十五电阻的一端以及所述第十六电阻的一端连接所述第三MOS管的源极;所述第一电容的另一端、所述第十三电阻的另一端、所述第三电容的另一端以及所述第十五电阻的另一端连接所述第一MOS管的漏极;所述第二电容的另一端、所述第四电容的另一端、所述第十四电阻的另一端以及所述第十六电阻的另一端连接所述第二MOS管的源极。 The switching power supply according to claim 6, wherein the full-bridge inverter circuit further includes a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a thirteenth resistor, a fourteenth resistor, A fifteenth resistor and a sixteenth resistor, one end of the first capacitor, one end of the second capacitor, one end of the thirteenth resistor and one end of the fourteenth resistor are connected to the first MOS tube The source of the third capacitor, the end of the fourth capacitor, the end of the fifteenth resistor, and the end of the sixteenth resistor connected to the source of the third MOS tube; The other end of the first capacitor, the other end of the thirteenth resistor, the other end of the third capacitor, and the other end of the fifteenth resistor are connected to the drain of the first MOS tube; the second The other end of the capacitor, the other end of the fourth capacitor, the other end of the fourteenth resistor, and the other end of the sixteenth resistor are connected to the source of the second MOS tube.
PCT/CN2018/112479 2018-10-29 2018-10-29 Driving circuit and switch power supply WO2020087224A1 (en)

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