CN103248206A - Isolation drive method of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) switch tubes applied to traveling wave tube program control high-voltage power supply - Google Patents
Isolation drive method of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) switch tubes applied to traveling wave tube program control high-voltage power supply Download PDFInfo
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- CN103248206A CN103248206A CN2013101531535A CN201310153153A CN103248206A CN 103248206 A CN103248206 A CN 103248206A CN 2013101531535 A CN2013101531535 A CN 2013101531535A CN 201310153153 A CN201310153153 A CN 201310153153A CN 103248206 A CN103248206 A CN 103248206A
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses an isolation drive method of MOSFET switch tubes applied to a traveling wave tube program control high-voltage power supply. A pulse width modulating signal is sent to an extra-high voltage isolation pulse transformer to produce two groups of trigger pulse signals with the same amplitude, the same frequency and opposite phases after processed; and each group of the trigger signals drive an MOSFET power switch tube on a respective bridge arm to work after passing through a push-pull amplifier circuit and a transient suppression circuit respectively.
Description
Technical field
The present invention relates to switch mosfet pipe isolation drive technical field, specially a kind of switch mosfet pipe isolation drive method applied to travelling-wave tubes program control high voltage power supply.
Background technology
Each supply voltage of travelling-wave tubes program control high voltage power supply is mainly characterized by control accuracy height, output power, voltage-to-ground and is up to tens thousand of volts etc. all using negative electrode as reference；The program control high voltage power supply cathode voltage of the present invention is up to 16kV, collector peak power 4kW.Firstly, since output voltage is higher, so to carry out the electrical isolation of superelevation between power main loop and control circuit, secondly, switching tube is operated in high-frequency high-power state, so the antijamming capability of drive circuit must be improved；In addition, to ensure that power MOFET works under high frequency, high pressure, high current, snap switch load capacity, load dynamic responding speed to power supply, the precision of voltage regulation propose great challenge；Therefore, it is necessary to design the gate driving circuit of high efficient and reliable for such power MOFET switching tubes.
At present in traditional switch mosfet pipe isolation drive method, more using Drive Control Techniques such as level shift, optocoupler isolation, Fiber isolation, pulse transformer isolation.Level shift mode is not proper isolation, but a kind of mode of quasi- isolation, and power consumption is big, manufacturing process is difficult to.Optocoupler isolation method isolation pressure withstanding degree is not high, and switching frequency is low, and transmission delay, speed are slow, and common mode inhibition capacity is poor, and transmission range is short, it is desirable to provide high voltage isolated power supply.It is high that Fiber isolation mode isolates pressure-resistant comparison, can effectively suppression electromagnetic interference, but there is transmission delay, easy aging, need to provide high voltage isolated power supply.Pulse transformer isolation method isolates high pressure, cost is low, reliability is high, transmission delay is small, switching frequency is high, strong to the rejection ability of common-mode signal, it is not necessary to provide high voltage isolated power supply.
Pulse transformer isolation is a kind of conventional isolated form of the wholly-controled device such as MOSFET and IGBT drive circuit, because it has, circuit structure is simple, it is relatively low to provide insulating power supply, cost, the advantages of pulse signals are without transmission delay, drive circuit electrical isolation, rapidity, the requirement of stronger driving force are disclosure satisfy that, therefore is considered as this isolation drive mode in R＆D process first.But, for high pressure, powerful travelling-wave tubes program control high voltage power supply, traditional pulse transformer isolation drive mode is also that can not meet what it was required.The present invention has creatively invented a kind of switch mosfet pipe isolation drive technology applied to travelling-wave tubes program control high voltage power supply, i.e., a kind of novel passive pulse transformer isolation drive technology on the basis of conventional pulse transformer isolation method.
The content of the invention
The problem of existing for prior art, it is an object of the invention to provide a kind of switch mosfet pipe isolation drive method applied to travelling-wave tubes program control high voltage power supply.
In order to achieve the above object, the technical solution adopted in the present invention is：
Switch mosfet pipe isolation drive method applied to travelling-wave tubes program control high voltage power supply, it is characterised in that：Pass through vibration damping circuit as the pulse-width signal of drive signal, eliminate after long line oscillator noise, send into current buffering drive circuit, carry out current driving ability amplification, again through blocking vibration damping circuit, high_voltage isolation coupling transformer input is sent into, secondarily level produces same width, two groups of start pulse signals with frequency but opposite in phase；Every group of trigger signal is each by recommending amplification driving circuit, Channel-shifted isolation circuit, again after suppressing the Sofe Switch drive circuit of function with transient state, the MOSFET power switch pipes on respective bridge arm are driven to work respectively, wherein, vibration damping circuit, blocking vibration damping circuit, and Sofe Switch drive circuit complete noise suppressing function jointly；Current buffering drive circuit, recommend amplification driving circuit constitute driving enhancing circuit；The capacitance of high_voltage isolation coupling transformer and its input then constitutes block isolating circuit, and its stopping direct current, the superperformance of logical exchange reach the electrical isolation function of drive circuit primary and secondary；High voltage isolating transformer is as one of key technology of the present invention, and the coiling in parallel of its primary and secondary close-coupled, good insulating properties, ultralow leakage inductance characteristic are enough to keep drive waveforms pulse characteristic and are prevented effectively from driving delay；Main switch grid, source electrode punching suppress the Sofe Switch drive circuit that magnetic bead is constituted, with in low frequency present perception, high frequency when tend to resistive feature, therefore Sofe Switch function can effectively be realized, with good switching transient rejection ability, the switch mosfet pipe isolation drive of preferable travelling-wave tubes program control high voltage power supply is finally realized.
Travelling-wave tubes program control high voltage power supply utilizes proprietary switch mosfet pipe isolation drive technology, realize that power is quickly dynamically adjusted, reached the various functions index of the special program control high voltage power supply of travelling-wave tubes test system, be also travelling-wave tubes program control high voltage power supply high pressure, high-power isolation inversion design on optimal selection.
The present invention is in the design of travelling-wave tubes program control high voltage power supply, according to its high pressure, the particularity of high power switch characteristic, employ a kind of unique switch mosfet pipe isolation drive method, this method is skillfully constructed, circuit is reliable and practical, high-power momentary switch driving force is not only increased, switch drive noise is effectively inhibited, and has further prevented the common phenomenon of the switch of high-power.
The beneficial effects of the invention are as follows：Drive circuit possesses good electrical isolation characteristic, it is to avoid power stage circuit is interfered to signal processed；MOSFET rapid translatings and high peak current are met, Miller effect is overcome；The propagation delay time of drive circuit is shorter, reduces switching dead time, improves the control accuracy and efficiency of converter；The drive circuit propagation delay time difference of bridge power pipe is also minimum, it is to avoid two power tubes of bridge arm are straight-through to damage phenomenon；In addition, the present invention drive circuit is simple and reliable, small volume, cost are low.
Brief description of the drawings
Fig. 1 is the schematic block circuit diagram of the inventive method.
Fig. 2 is the circuit theory diagrams of the inventive method.
Fig. 3 is driving transformer key point waveform diagram.
Embodiment
As shown in Figure 1.The workflow of theory diagram shown in Fig. 1 is as follows：Drive signal is sent to high current buffering drive circuit and carries out expansion stream process, transient state current drive capability expands to ampere level from milliampere level after the long line vibration of vibration damping circuit for eliminating；Isolation coupling primary is input to through blocking vibration damping circuit, the transformer has high_voltage isolation, couples the characteristic such as good, transformer secondary output exports a pair with width with frequency but completely anti-phase pulse drive signal, pass through two groups of circuitry control parameters and the completely the same push-pull amplifier circuit of component parameter, Channel-shifted isolation circuit again, push-pull amplifier circuit, which is played, avoids common conducting from acting on, and Channel-shifted isolation circuit then can avoid what is turned on and off from interfering；Drive signal is after the processing of above-mentioned series of optimum, it is sent to respective Sofe Switch drive circuit, Sofe Switch drive circuit on the one hand to eliminate distribution capacity voltage may caused by switching tube mislead problem, on the other hand realize that the dynamic of switching surge electric current suppresses function, and then realize the perfect isolation drive function of switch mosfet pipe.
As shown in Figure 2.In fig. 2, resistance R1, R2 and R4, R5 are antihunt circuit, are acted on long line concussion is eliminated.N1, N2 are high current buffering driver, it has the pulse output circuit ability of higher continuous output current and Geng Gao, with faster rise and fall time and shorter internal delay time, and with very low output inner resistance, certain guarantee effect is played in the Hyblid Buffer Amplifier driving to electric current.V1~V4 collectively constitutes primary peak absorbing and reverse connecting protection etc. in figure.Resistance R3, electric capacity C3 constitute primary blocking and vibration damping circuit.Transformer T1 is one of key technology of the present invention, and the pulse transformer has 3 windings, an armature winding and two secondary windings, and they should all have good insulating properties, and the number of turn between three is essentially equal, close-coupled during in favor of coiling in parallel；Pulse transformer does not answer storage energy, therefore reduction is let out and feels extremely important for improving drive waveforms and raising efficiency, so just be can guarantee that the higher peak point current of offer when on or off, is prevented effectively from the time delay in raster data model；In addition in Pulse Transformer Design it must also be taken into account that the harsh situation of transient state under all conditions such as maximum duty cycle, maximum input voltage.
V5, V6 and V11, V12, which are separately constituted, recommends amplification driving circuit, further enhancing current driving ability.V7, V8 and V13, V14 constitute signal path conversion and buffer action, are effectively guaranteed multitube complementary drive function, reduction is interfered.L1~L8 is that main switch grid, the punching of source electrode suppress magnetic bead, increases driving force, reaches Sofe Switch effect and avoid influence to switching waveform.
From this figure it can be seen that the drive circuit has complementary drive function, i.e., another power MOSFET is turned off while a power MOSFET ON, and the two drive signals are mutually isolated.Pulse transformer has two secondary windings, and two independent drive circuits are connected respectively.Because the Same Name of Ends of two secondary windings is just the opposite, then when N1 is output as high level, N2 and is output as low level, upper group of drive circuit output voltage is just, it is negative that the following group drive circuit, which brings out voltage, and vice versa.Because signal comes from same pulse transformer, so the complementarity of this circuit is very well, the generation of the bad phenomenon such as common can be effectively prevented.
Power and the aspect gain amplifier requirement of electric current two are ensure that by above-mentioned a variety of measures, so as to ensure that the Transient Gain and speed index of loop of power circuit；Especially the innovative design of passive pulse transformer driving, greatly strengthen the switching capability of switching tube, it is suppressed that switching noise, thus can effectively improve the high-power fan-out capability of the high voltage transient of switching tube.
The characteristics of the inventive method is：Start pulse signal has sufficiently fast raising and lowering speed；Using low resistance as gate capacitance charges when opening, low resistance discharge loop is provided for grid during shut-off, to improve power MOSFET switching speed；In order that the reliable triggering and conductings of power MOSFET, trigger pulse voltage is higher than the cut-in voltage of switching tube, in order to prevent misleading, sufficiently high reverse gate source voltage is additionally provided when it ends；Required driving current is the charging and discharging currents of grid capacitance when power switch pipe is switched, and power tube interelectrode capacity is bigger, and required electric current is bigger, i.e., carrying load ability is bigger.
N1, N2 use the high current buffered-display driver chip with high-power MOS FET driving forces in the present invention, and it has superior heavily loaded switch drive ability, and its important technological parameters requires as follows：Ipk=9A, Idc=2A, Tr=60nS, Tf=60nS, Td=30nS.Which improves the ability to bear of instantaneous short circuit electric current, is even more important for circuit of the present invention.Because the process of rising or falling that the generation of instantaneous short circuit electric current is often as drive level pulse is oversize, or transmission delay is excessive, at this moment the MOSFET of high-pressure side and low-pressure side forms short circuit in the state simultaneously turned in the very short time between power supply and ground.Instantaneous short circuit electric current can significant reduction power supply efficiency, using this problem can be improved after high current buffered-display driver chip driver in terms of two：
The rise time and fall time of MOSFET gate drive levels first are equal, and the time is shorter；TC4422EPA types driver is in the case where 1nF is loaded, and pulse rise time Tr and fall time Tf are only 25ns.Secondly the propagation delay of driving pulse is very short, it is ensured that the MOSFET of high-pressure side and low-pressure side has equal on-delay and turn-off delay；The rising edge of a pulse of TC4422EPA types driver and the propagation delay of trailing edge are respectively less than 2ns in the present invention.And be difficult in traditional discrete device circuit.Legacy drive is only applicable to the product that circuit is simple, output current is small, can neither meet and require high performance, also without any cost advantage.
Drive circuit should possess good electrical isolation characteristic, it is to avoid power stage circuit is interfered to signal processed, therefore the present invention uses pulse transformer type of drive.Produce symmetrical negative pulse to accelerate MOSFET turn-off speed, it is ensured that MOSFET reliable turn-offs, improve the antijamming capability of drive circuit；Avoid simultaneously because voltage stress too high when MOSFET cut-in voltage declines with the time and MOSFET is turned off causes MOSFET to mislead.Therefore, the design of self-made components pulse transformer is also one of key technology of the present invention.Pulse transformer specific design is as follows：
1st, working frequency fT=100kHz, to reduce pulse transformer volume, size；2nd, supply voltage 15V, had both ensured the abundant switch conductions of MOSFET, and had also ensured that it was operated in place of safety；3rd, average driving power >=1000mW.The selection of magnetic core of transformer：
PQ2020 power capacity product is 0.42, is about twice than 0.22 numerical value, therefore design load leaves abundant surplus.
Calculate the inductance value of armature winding：
The primary and secondary umber of turn design of pulse transformer：
It is 36 circles to take the primary and secondary number of turn
Pulse transformer also takes measure in detail below when actual design makes：Reduce umber of turn as far as possible in the case where meeting design requirement；Winding thickness is reduced from suitable size magnetic core；Ensure to reduce the insulation between winding on the premise of insulation as far as possible；From the small insulating materials of dielectric constant；Reasonable arrangement winding polarity；Using electrostatic screen；The full coiling in parallel of primary and secondary use winding, section of winding layering coiling improves drive waveforms to reduce leakage inductance.
The propagation delay time of drive circuit should be lacked as far as possible, to reduce switching dead time, improve the control accuracy and efficiency of converter.The drive circuit propagation delay time difference of bridge arm power tube should be as small as possible.If propagation delay time difference is larger, it is possible to cause two power tubes of bridge arm to lead directly to, cause power tube to damage.Therefore, each link on driving path considers transmission delay problem, middle power MOSFET switch tube V5, V6 and V11, the V12 of drive circuit, and main switch using low input grid capacitance, the "None" transmission delay switching tube of low transfer characteristic.In addition, all high frequency capacitances are high-frequency ceramic electric capacity in figure, it is ensured that stronger capacitive is still presented in high frequency, to the impedance very little of high-frequency signal, therefore radio-frequency component can be absorbed well.So overall equivalent inductive reactance of circuit is just smaller, and the ESR of high-frequency signal is also smaller, has effectively prevented higher-order of oscillation problem.As shown in figure 3, Fig. 3 is the drive waveforms schematic diagram by taking V5 as an example, key point oscillogram reflects the good "None" transmission delay characteristics of the circuit in figure.
Present invention employs the Novel MOS FET switch pipe isolation drive technology applied to travelling-wave tubes program control high voltage power supply, meet the particular/special requirement of high pressure, high power travelling wave tube program control high voltage power supply to drive circuit, avoid unwanted oscillation, a series of problems, such as high pressure is common, make circuit being switched fast with preferable transient state regulating power to load, and effectively increase the stability and dynamic performance index of system.
Claims (1)
1. the switch mosfet pipe isolation drive method applied to travelling-wave tubes program control high voltage power supply, it is characterised in that：Pass through vibration damping circuit as the pulse-width signal of drive signal, eliminate after long line oscillator noise, send into current buffering drive circuit, carry out current driving ability amplification, again through blocking vibration damping circuit, high_voltage isolation coupling transformer input is sent into, secondarily level produces same width, two groups of start pulse signals with frequency but opposite in phase；Every group of trigger signal is each by recommending amplification driving circuit, Channel-shifted isolation circuit, again after suppressing the Sofe Switch drive circuit of function with transient state, the MOSFET power switch pipes on respective bridge arm are driven to work respectively, wherein, vibration damping circuit, blocking vibration damping circuit, and Sofe Switch drive circuit complete noise suppressing function jointly；Current buffering drive circuit, recommend amplification driving circuit constitute driving enhancing circuit；The capacitance of high_voltage isolation coupling transformer and its input then constitutes block isolating circuit, and its stopping direct current, the superperformance of logical exchange reach the electrical isolation function of drive circuit primary and secondary；High voltage isolating transformer is as one of key technology of the present invention, and the coiling in parallel of its primary and secondary close-coupled, good insulating properties, ultralow leakage inductance characteristic are enough to keep drive waveforms pulse characteristic and are prevented effectively from driving delay；Main switch grid, source electrode punching suppress the Sofe Switch drive circuit that magnetic bead is constituted, with in low frequency present perception, high frequency when tend to resistive feature, therefore Sofe Switch function can effectively be realized, with good switching transient rejection ability, the switch mosfet pipe isolation drive of preferable travelling-wave tubes program control high voltage power supply is finally realized.
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| CN201310153153.5A CN103248206B (en) | 2013-04-27 | 2013-04-27 | Be applied to the switch mosfet pipe isolation drive method of the program control high voltage source of travelling wave tube |
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| CN201310153153.5A CN103248206B (en) | 2013-04-27 | 2013-04-27 | Be applied to the switch mosfet pipe isolation drive method of the program control high voltage source of travelling wave tube |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105515349A (en) * | 2015-12-02 | 2016-04-20 | 中国电子科技集团公司第四十一研究所 | Switch tube drive circuit applied to programmable DC power supply |
| WO2020087224A1 (en) * | 2018-10-29 | 2020-05-07 | 深圳配天智能技术研究院有限公司 | Driving circuit and switch power supply |
| CN112434401A (en) * | 2020-10-15 | 2021-03-02 | 北京交通大学 | Mathematical model for high-frequency pulse interference of MOSFET grid-source voltage response |
| CN116488624A (en) * | 2023-05-11 | 2023-07-25 | 天津大学 | All-solid-state nanosecond high-voltage pulse switch |
| CN116704956A (en) * | 2023-08-07 | 2023-09-05 | 上海视涯技术有限公司 | Level conversion circuit, silicon-based organic light-emitting micro display panel and display device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105515349A (en) * | 2015-12-02 | 2016-04-20 | 中国电子科技集团公司第四十一研究所 | Switch tube drive circuit applied to programmable DC power supply |
| CN105515349B (en) * | 2015-12-02 | 2018-06-26 | 中国电子科技集团公司第四十一研究所 | A kind of switch tube driving circuit applied to programme-controlled dc power |
| WO2020087224A1 (en) * | 2018-10-29 | 2020-05-07 | 深圳配天智能技术研究院有限公司 | Driving circuit and switch power supply |
| CN112434401A (en) * | 2020-10-15 | 2021-03-02 | 北京交通大学 | Mathematical model for high-frequency pulse interference of MOSFET grid-source voltage response |
| CN112434401B (en) * | 2020-10-15 | 2021-10-08 | 北京交通大学 | Method for responding high-frequency pulse interference by MOSFET grid-source voltage |
| CN116488624A (en) * | 2023-05-11 | 2023-07-25 | 天津大学 | All-solid-state nanosecond high-voltage pulse switch |
| CN116704956A (en) * | 2023-08-07 | 2023-09-05 | 上海视涯技术有限公司 | Level conversion circuit, silicon-based organic light-emitting micro display panel and display device |
| CN116704956B (en) * | 2023-08-07 | 2023-10-13 | 上海视涯技术有限公司 | Level conversion circuit, silicon-based organic light-emitting micro display panel and display device |
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