WO2020082453A1 - Method for intelligently adjusting reference voltage in flash memory device - Google Patents
Method for intelligently adjusting reference voltage in flash memory device Download PDFInfo
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- WO2020082453A1 WO2020082453A1 PCT/CN2018/115514 CN2018115514W WO2020082453A1 WO 2020082453 A1 WO2020082453 A1 WO 2020082453A1 CN 2018115514 W CN2018115514 W CN 2018115514W WO 2020082453 A1 WO2020082453 A1 WO 2020082453A1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/062—Securing storage systems
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Definitions
- the invention relates to the technical field of adjusting reference voltage sequencing of flash memory in a storage device, in particular to a method for intelligently adjusting reference voltage in a flash memory storage device.
- Flash memory is a kind of non-volatile memory, even if power is off, data will not be lost, because flash memory does not rewrite data in bytes like RAM (random access memory), so it cannot replace RAM.
- Flash memory is a very common storage medium at present, and can be used from small-sized storage devices to large data storage centers. Flash memory is more susceptible to flash memory reliability changes due to the evolution of the current manufacturing process. These conditions include repeated erasing the interference caused by reading and writing the memory blocks in the flash memory, the interference caused by long-term storage, and the interference caused by high and low temperatures. These conditions will cause errors in the data stored in the flash memory and allow the contents of the storage device Abnormal.
- the current technology proposes a set of repeated reading methods. This method is to re-read the flash memory by adjusting the reference voltage of the parameter to obtain the correct data. Depending on the situation, the parameters used are different.
- the current storage device will put n sets of reference voltage adjustment parameters in the memory during mass production. When an error occurs in reading data from the flash memory, it will sequentially grab the parameters from the memory to set the flash memory and set Read again, and judge whether the data is normal according to the reading result.
- An object of the present invention is to provide a method for intelligently adjusting a reference voltage in a flash memory storage device, so as to solve the above-mentioned problems in the background art.
- a method for intelligently adjusting a reference voltage in a flash memory storage device includes the following steps:
- Step 1 First initialize the order of the reference voltage parameters
- Step 2 Determine whether the data in the flash memory is wrong. If yes, go to the next step. If not, determine whether the data in the flash memory is wrong again;
- Step 3 Adjust the reference voltage and reread the data in the flash memory
- Step 4 Determine whether the reading data is successful, if yes, go to the next step, if no, return to the previous step;
- Step 5 Add 1 to the parameter weight after successful data reading
- Step 6 Calculate the weight of each group of parameters
- Step 7 Rearrange the priority of the reference voltage.
- each set of reference voltage parameters in step 1 is set with a set of weight values.
- the reference voltage parameter is set in the memory in the first step.
- the data in the flash memory is incorrect in the second step, parameters will be grabbed from the memory to set the flash memory and read again.
- the higher the weight value in step 5 is, the higher the priority level to be executed.
- the method of the present invention is more efficient in handling various states than cannot adjust or let the flash memory read the data correctly according to a certain set of parameters to become the highest priority.
- the use of weights can ensure that the most frequently used and successful parameters are the highest priority Being executed, it will not reduce the priority because of a special case.
- FIG. 1 is a flow chart of reference voltage parameter sequencing of the present invention.
- the present invention provides a technical solution: a method for intelligently adjusting a reference voltage in a flash memory storage device, including the following steps:
- Step 1 First initialize the order of the reference voltage parameters
- Step 2 Determine whether the data in the flash memory is wrong. If yes, go to the next step. If not, determine whether the data in the flash memory is wrong again;
- Step 3 Adjust the reference voltage and reread the data in the flash memory
- Step 4 Determine whether the reading data is successful, if yes, go to the next step, if no, return to the previous step;
- Step 5 Add 1 to the parameter weight after successful data reading
- Step 6 Calculate the weight of each group of parameters
- Step 7 Rearrange the priority of the reference voltage.
- the reference voltage parameters are set in the memory, and each set of reference voltage parameters is set with a set of weight values. The higher the weight value, the higher the priority of execution. If the data in the flash memory is incorrect, the parameters will be fetched from the memory to do the flash memory. Set and read again.
- This method proposes the concept of weights.
- Each set of parameters that adjusts the reference voltage has a set of weights.
- the weights of the parameters are modified and the order of execution of each set of parameter adjustments is rearranged.
- the use of weights can ensure that the most frequently used and successful parameters are executed with the highest priority, and will not reduce the priority because of a particular case.
- the parameters suitable for adjusting the high-temperature environment can be prioritized in front of the parameter list. If you insert a case where the reference voltage needs to be adjusted for long-term storage at this time, it will not be because of The parameter suitable for adjusting for a long period of time is successful and the priority of the parameter suitable for adjusting the high temperature environment is reduced.
- Embodiment 1 Change the storage device from normal temperature environment to long time and execute it in a high temperature environment.
- the parameters suitable for adjusting the high temperature environment can be prioritized in front of the parameter list.
- the parameter is defined as parameter A and the weight is 6. Insert a In the case where the reference voltage needs to be adjusted for a long period of time, the parameter is defined as parameter B and the weight is 0. After the process of the present invention, it is judged that the data in the flash memory is correct and the weight of parameter B is still 0, so the solution of parameter A is still used.
- Embodiment 2 The storage device is changed from normal temperature environment to long time and executed under high temperature environment.
- the parameters suitable for adjusting the high temperature environment can be prioritized in front of the parameter list.
- the parameter is defined as parameter A and the weight is 6.
- Insert a In the case where the reference voltage needs to be adjusted for a long time, the parameter is defined as parameter C and the weight is 0.
- the weight of parameter C continues to be +1. After 5 times, the parameter C The weight of is 5 and the weight of parameter A is 6, then the scheme of parameter A is still used.
- the third embodiment is to change the storage device from normal temperature environment to long time and execute it under high temperature environment.
- the parameters suitable for adjusting the high temperature environment can be prioritized in the parameter list.
- the parameter is defined as parameter A and the weight is 6. Insert a If the reference voltage needs to be adjusted for a long period of time, the parameter is defined as parameter D and the weight is 0. After the process of the present invention, it is judged that the data in the flash memory is incorrect. The weight of parameter D continues to be +1. After 7 times, the parameter D The weight of is 7 and the weight of parameter A is 6, then the scheme of parameter D is commonly used.
- the method of the present invention can adopt the optimal reference voltage parameter, which becomes the highest priority than can not adjust or make the flash memory read the data correctly according to a certain group of parameters .
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Abstract
A method for intelligently adjusting a reference voltage in a flash memory device, comprising the following steps: step I, first initializing the order of reference voltage parameters; step II, determining whether an error occurs in materials in a flash memory; if yes, entering the next step; and if not, determining again whether an error occurs in the materials in the flash memory; step III, adjusting a reference voltage and re-reading the materials in the flash memory; step IV, determining whether data is read successfully; if yes, entering the next step; and if not, returning to the previous step; step V, adding 1 to the weights of the parameters after the data is read successfully; step VI, computing the weight of each group of parameters; and step VII, re-prioritizing reference voltages. The method is more efficient in processing different states than turning into the highest priority if materials read from a flash memory cannot be adjusted or cannot be corrected according to a given group of parameters; and the use of weights can ensure that the most frequently and successfully used parameter is executed with the top priority, rather than a lowered priority due to the occurrence of a given exception.
Description
本发明涉及存储装置中闪存的调整参考电压排序技术领域，具体为一种闪存存储装置中智能化调整参考电压的方法。The invention relates to the technical field of adjusting reference voltage sequencing of flash memory in a storage device, in particular to a method for intelligently adjusting reference voltage in a flash memory storage device.
闪存是一种非易失性存储器，即断电数据也不会丢失，因为闪存不像RAM(随机存取存储器)一样以字节为单位改写数据，因此不能取代RAM。Flash memory is a kind of non-volatile memory, even if power is off, data will not be lost, because flash memory does not rewrite data in bytes like RAM (random access memory), so it cannot replace RAM.
闪存是目前相当常见的存储媒介，从小尺寸的存储装置到大数据的存储中心都可使用，闪存因为目前制程的演进，造成闪存可靠度更容易受到状况改变而受影响。这些状况包含反复抹除读写闪存中的存块造成的干扰、长时间放置造成的干扰、高低温度造成的干扰等，这些状况都会让闪存中存储的数据发生错误，而让存储装置内的内容出现异常。Flash memory is a very common storage medium at present, and can be used from small-sized storage devices to large data storage centers. Flash memory is more susceptible to flash memory reliability changes due to the evolution of the current manufacturing process. These conditions include repeated erasing the interference caused by reading and writing the memory blocks in the flash memory, the interference caused by long-term storage, and the interference caused by high and low temperatures. These conditions will cause errors in the data stored in the flash memory and allow the contents of the storage device Abnormal.
为了减少闪存因为制程演进造成更容易受到其他因素影响可靠度，目前技术提出了一套重复读取的方法，此方法是透过参数调整参考电压重新读取闪存来获取正确的数据。根据不同的状况，所使用的参数也不一样。目前的存储装置在量产时会把n组的参考电压的调整参数放在内存中，当发生数据从闪存中读取错误的时候，会依序从内存中抓取参数对闪存做设定并重新读取，根据读取结果判断此笔资料是否正常。因为不同种参数对应不同的处理状况，假如参数顺序不能按照实际状况更动，或是可以更动但是更动效果不 好，都会影响存储装置的运行效率，比不能调整或是根据某一组参数让闪存读取资料正确就变成最高优先权更有效率处理各种状态，权重的使用可以确保最常被使用且成功的参数是最优先被执行，不会因为某一个特例出现反而降低优先权，因此，亟待一种改进的技术来解决现有技术中所存在的这一问题。In order to reduce the reliability of the flash memory due to process evolution, it is more likely to be affected by other factors. The current technology proposes a set of repeated reading methods. This method is to re-read the flash memory by adjusting the reference voltage of the parameter to obtain the correct data. Depending on the situation, the parameters used are different. The current storage device will put n sets of reference voltage adjustment parameters in the memory during mass production. When an error occurs in reading data from the flash memory, it will sequentially grab the parameters from the memory to set the flash memory and set Read again, and judge whether the data is normal according to the reading result. Because different kinds of parameters correspond to different processing conditions, if the parameter order cannot be changed according to the actual situation, or it can be changed but the change effect is not good, it will affect the operating efficiency of the storage device, which cannot be adjusted or based on a certain set of parameters Make the flash memory read the data correctly and become the highest priority to handle various states more efficiently. The use of weights can ensure that the most frequently used and successful parameters are executed with the highest priority, and will not reduce the priority because of a special case. Therefore, an improved technology is urgently needed to solve this problem in the prior art.
发明内容Summary of the invention
本发明的目的在于提供一种闪存存储装置中智能化调整参考电压的方法，以解决上述背景技术中提出的问题。An object of the present invention is to provide a method for intelligently adjusting a reference voltage in a flash memory storage device, so as to solve the above-mentioned problems in the background art.
为实现上述目的，本发明提供如下技术方案：一种闪存存储装置中智能化调整参考电压的方法，包括以下步骤：To achieve the above object, the present invention provides the following technical solution: A method for intelligently adjusting a reference voltage in a flash memory storage device includes the following steps:
步骤一：首先将参考电压参数的顺序初始化；Step 1: First initialize the order of the reference voltage parameters;
步骤二：判断闪存中资料是否有误，如果是，进入下一步，如果否，再次判断闪存中资料是否有误；Step 2: Determine whether the data in the flash memory is wrong. If yes, go to the next step. If not, determine whether the data in the flash memory is wrong again;
步骤三：调整参考电压并重读闪存中资料；Step 3: Adjust the reference voltage and reread the data in the flash memory;
步骤四：判断读取数据是否成功，如果是，进入下一步，如果否，返回上一步；Step 4: Determine whether the reading data is successful, if yes, go to the next step, if no, return to the previous step;
步骤五：读取数据成功后的参数权重加1；Step 5: Add 1 to the parameter weight after successful data reading;
步骤六：计算每组参数的权重；Step 6: Calculate the weight of each group of parameters;
步骤七：重新排列参考电压的优先级。Step 7: Rearrange the priority of the reference voltage.
优选的，所述步骤一中每组参考电压参数均设置有一组权重值。Preferably, each set of reference voltage parameters in step 1 is set with a set of weight values.
优选的，所述步骤一中参考电压参数设置在内存中。Preferably, the reference voltage parameter is set in the memory in the first step.
优选的，所述步骤二中闪存中资料有误，会从内存中抓取参数对闪存做设定并重新读取。Preferably, if the data in the flash memory is incorrect in the second step, parameters will be grabbed from the memory to set the flash memory and read again.
优选的，所述步骤五中权重值越高则被执行的优先级别越高。Preferably, the higher the weight value in step 5 is, the higher the priority level to be executed.
与现有技术相比，本发明的有益效果是：Compared with the prior art, the beneficial effects of the present invention are:
本发明的方法比不能调整或是根据某一组参数让闪存读取资料正确就变成最高优先权更有效率处理各种状态，权重的使用可以确保最常被使用且成功的参数是最优先被执行，不会因为某一个特例出现反而降低优先权。The method of the present invention is more efficient in handling various states than cannot adjust or let the flash memory read the data correctly according to a certain set of parameters to become the highest priority. The use of weights can ensure that the most frequently used and successful parameters are the highest priority Being executed, it will not reduce the priority because of a special case.
图1为本发明参考电压参数排序的流程图。FIG. 1 is a flow chart of reference voltage parameter sequencing of the present invention.
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.
请参阅图1，本发明提供一种技术方案：一种闪存存储装置中智能化调整参考电压的方法，包括以下步骤：Referring to FIG. 1, the present invention provides a technical solution: a method for intelligently adjusting a reference voltage in a flash memory storage device, including the following steps:
步骤一：首先将参考电压参数的顺序初始化；Step 1: First initialize the order of the reference voltage parameters;
步骤二：判断闪存中资料是否有误，如果是，进入下一步，如果否，再次判断闪存中资料是否有误；Step 2: Determine whether the data in the flash memory is wrong. If yes, go to the next step. If not, determine whether the data in the flash memory is wrong again;
步骤三：调整参考电压并重读闪存中资料；Step 3: Adjust the reference voltage and reread the data in the flash memory;
步骤四：判断读取数据是否成功，如果是，进入下一步，如果否，返回上一步；Step 4: Determine whether the reading data is successful, if yes, go to the next step, if no, return to the previous step;
步骤五：读取数据成功后的参数权重加1；Step 5: Add 1 to the parameter weight after successful data reading;
步骤六：计算每组参数的权重；Step 6: Calculate the weight of each group of parameters;
步骤七：重新排列参考电压的优先级。Step 7: Rearrange the priority of the reference voltage.
参考电压参数设置在内存中，每组参考电压参数均设置有一组权重值，权重值越高则被执行的优先级别越高，如果闪存中资料有误，会从内存中抓取参数对闪存做设定并重新读取。The reference voltage parameters are set in the memory, and each set of reference voltage parameters is set with a set of weight values. The higher the weight value, the higher the priority of execution. If the data in the flash memory is incorrect, the parameters will be fetched from the memory to do the flash memory. Set and read again.
此方式提出权重的概念，每一组调整参考电压的参数都有一组权重值，当启动调整参考电压参数的流程且成功读取数据，修改参数的权重值并且重新排列每组参数调整执行的顺序，权重的使用可以确保最常被使用且成功的参数是最优先被执行，不会因为某一个特例出现反而降低优先权。This method proposes the concept of weights. Each set of parameters that adjusts the reference voltage has a set of weights. When the process of adjusting the reference voltage parameters is started and the data is successfully read, the weights of the parameters are modified and the order of execution of each set of parameter adjustments is rearranged The use of weights can ensure that the most frequently used and successful parameters are executed with the highest priority, and will not reduce the priority because of a particular case.
譬如存储装置从常温环境变成长时间执行在高温环境下，适合调整高温环境的参数能够优先排列在参数列表前面，假如这时候插入一个因为长时间放置需要调整参考电压的案例，也不会因为适合调整长时间放置的参数成功而导致适合调整高温环境的参数优先权下降。For example, if the storage device is changed from normal temperature environment to long-term execution under high-temperature environment, the parameters suitable for adjusting the high-temperature environment can be prioritized in front of the parameter list. If you insert a case where the reference voltage needs to be adjusted for long-term storage at this time, it will not be because of The parameter suitable for adjusting for a long period of time is successful and the priority of the parameter suitable for adjusting the high temperature environment is reduced.
实施例一，将存储装置从常温环境换成长时间执行在高温环境下，适合调整高温环境的参数能够优先排列在参数列表前面，定义该参数为参数A且权重为6，此时插入一个因为长时间放置需要调整参考电压的案例，定义该参数为参数B且权重为0，经过本发明 流程后，判断闪存中资料无误，参数B的权重仍然为0，那么仍然采用参数A的方案。Embodiment 1: Change the storage device from normal temperature environment to long time and execute it in a high temperature environment. The parameters suitable for adjusting the high temperature environment can be prioritized in front of the parameter list. The parameter is defined as parameter A and the weight is 6. Insert a In the case where the reference voltage needs to be adjusted for a long period of time, the parameter is defined as parameter B and the weight is 0. After the process of the present invention, it is judged that the data in the flash memory is correct and the weight of parameter B is still 0, so the solution of parameter A is still used.
实施例二，将存储装置从常温环境换成长时间执行在高温环境下，适合调整高温环境的参数能够优先排列在参数列表前面，定义该参数为参数A且权重为6，此时插入一个因为长时间放置需要调整参考电压的案例，定义该参数为参数C且权重为0，经过本发明流程后，判断闪存中资料有误，参数C的权重持续+1，当执行5次后，参数C的权重为5，参数A的权重为6，那么仍然采用参数A的方案。Embodiment 2 The storage device is changed from normal temperature environment to long time and executed under high temperature environment. The parameters suitable for adjusting the high temperature environment can be prioritized in front of the parameter list. The parameter is defined as parameter A and the weight is 6. Insert a In the case where the reference voltage needs to be adjusted for a long time, the parameter is defined as parameter C and the weight is 0. After the process of the present invention, it is judged that the data in the flash memory is wrong. The weight of parameter C continues to be +1. After 5 times, the parameter C The weight of is 5 and the weight of parameter A is 6, then the scheme of parameter A is still used.
实施例三，将存储装置从常温环境换成长时间执行在高温环境下，适合调整高温环境的参数能够优先排列在参数列表前面，定义该参数为参数A且权重为6，此时插入一个因为长时间放置需要调整参考电压的案例，定义该参数为参数D且权重为0，经过本发明流程后，判断闪存中资料有误，参数D的权重持续+1，当执行7次后，参数D的权重为7，参数A的权重为6，那么将常用参数D的方案。The third embodiment is to change the storage device from normal temperature environment to long time and execute it under high temperature environment. The parameters suitable for adjusting the high temperature environment can be prioritized in the parameter list. The parameter is defined as parameter A and the weight is 6. Insert a If the reference voltage needs to be adjusted for a long period of time, the parameter is defined as parameter D and the weight is 0. After the process of the present invention, it is judged that the data in the flash memory is incorrect. The weight of parameter D continues to be +1. After 7 times, the parameter D The weight of is 7 and the weight of parameter A is 6, then the scheme of parameter D is commonly used.
通过实施例一～三可以判断，本发明的方式可采用最优参考电压参数，比不能调整或是根据某一组参数让闪存读取资料正确就变成最高优先权更有效率处理各种状态。It can be judged by the first to third embodiments that the method of the present invention can adopt the optimal reference voltage parameter, which becomes the highest priority than can not adjust or make the flash memory read the data correctly according to a certain group of parameters .
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附 权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, and substitutions can be made to these embodiments without departing from the principle and spirit of the present invention And variations, the scope of the invention is defined by the appended claims and their equivalents.
Claims (4)
- 一种闪存存储装置中智能化调整参考电压的方法，其特征在于：包括以下步骤：A method for intelligently adjusting a reference voltage in a flash memory storage device is characterized by the following steps:步骤一：首先将参考电压参数的顺序初始化；Step 1: First initialize the order of the reference voltage parameters;步骤二：判断闪存中资料是否有误，如果是，进入下一步，如果否，再次判断闪存中资料是否有误；Step 2: Determine whether the data in the flash memory is wrong. If yes, go to the next step. If not, determine whether the data in the flash memory is wrong again;步骤三：调整参考电压并重读闪存中资料；Step 3: Adjust the reference voltage and reread the data in the flash memory;步骤四：判断读取数据是否成功，如果是，进入下一步，如果否，返回上一步；Step 4: Determine whether the reading data is successful, if yes, go to the next step, if no, return to the previous step;步骤五：读取数据成功后的参数权重加1；Step 5: Add 1 to the parameter weight after successful data reading;步骤六：计算每组参数的权重；Step 6: Calculate the weight of each group of parameters;步骤七：重新排列参考电压的优先级。Step 7: Rearrange the priority of the reference voltage.
- 根据权利要求1所述的一种闪存存储装置中智能化调整参考电压的方法，其特征在于：所述步骤一中每组参考电压参数均设置有一组权重值。The method for intelligently adjusting a reference voltage in a flash memory storage device according to claim 1, wherein each set of reference voltage parameters in the first step is set with a set of weight values.
- 根据权利要求1所述的一种闪存存储装置中智能化调整参考电压的方法，其特征在于：所述步骤一中参考电压参数设置在内存中。The method for intelligently adjusting a reference voltage in a flash memory storage device according to claim 1, wherein the reference voltage parameter is set in a memory in the first step.
- 根据权利要求1所述的一种闪存存储装置中智能化调整参考电压的方法，其特征在于：所述步骤二中闪存中资料有误，会从内存中抓取参数对闪存做设定并重新读取。The method for intelligently adjusting the reference voltage in a flash memory storage device according to claim 1, characterized in that: the data in the flash memory is incorrect in the second step, the parameters will be grabbed from the memory to set the flash memory and reset Read.根据权利要求1所述的一种闪存存储装置中智能化调整参考电压的方法，其特征在于：所述步骤五中权重值越高则被执行的优先级别 越高。A method for intelligently adjusting a reference voltage in a flash memory storage device according to claim 1, wherein the higher the weight value in step 5 is, the higher the priority level to be executed.
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| CN104460941A (en) * | 2014-12-03 | 2015-03-25 | 上海新储集成电路有限公司 | Method for reducing power consumption of main memory under full load operation |
| CN108320774A (en) * | 2018-01-18 | 2018-07-24 | 江苏华存电子科技有限公司 | Flash memory device threshold voltage parameter marshalling method and device |
| CN108648779A (en) * | 2018-03-29 | 2018-10-12 | 深圳忆联信息系统有限公司 | A kind of method of flash memory particle screen selecting classification |
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| US20100037006A1 (en) * | 2008-08-05 | 2010-02-11 | A-Data Technology (Suzhou) Co, Ltd. | Non-volatile memory and controlling method thereof |
| CN104460941A (en) * | 2014-12-03 | 2015-03-25 | 上海新储集成电路有限公司 | Method for reducing power consumption of main memory under full load operation |
| CN108320774A (en) * | 2018-01-18 | 2018-07-24 | 江苏华存电子科技有限公司 | Flash memory device threshold voltage parameter marshalling method and device |
| CN108648779A (en) * | 2018-03-29 | 2018-10-12 | 深圳忆联信息系统有限公司 | A kind of method of flash memory particle screen selecting classification |
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