CN112530499A - Data reading method and computer readable storage device - Google Patents
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- 238000012937 correction Methods 0.000 claims description 8
- 238000004590 computer program Methods 0.000 claims description 3
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
- G11C29/883—Masking faults in memories by using spares or by reconfiguring with partially good memories using a single defective memory device with reduced capacity, e.g. half capacity
Abstract
The invention discloses a data reading method and a computer readable storage device, wherein the data reading method comprises the following steps: providing a storage unit, wherein the storage unit comprises a plurality of data storage positions; a read retry table is configured on the storage unit, and the read retry table comprises a plurality of re-reading steps which are sequentially arranged; requesting to read data at the data storage location; if the read data is correct, the read data is output, if the read data is incorrect, a re-reading step is adopted to execute a re-reading mechanism until the re-reading is successful, the re-read data is output, and when the reading overrun parameters of the re-reading step corresponding to the re-reading success are larger than a preset threshold value, a data storage position abandoning mechanism is executed. The invention effectively improves the reading performance of the flash memory device and prolongs the service life of the flash memory device.
Description
Technical Field
The present invention relates to a data reading method and a computer readable storage device, and belongs to the technical field of memories.
Background
As the capacity of the required flash memory device is larger and larger, the flash memory device also needs better and better error correction quality, and various flash memory device suppliers provide a read retry table to adjust the voltage offset of the flash memory device during reading so as to read data more accurately. As flash device capacity increases, the number of sets of read retry tables provided by flash device vendors increases. In the read retry process, if the retry is started from the 0 th group of the read retry table every time, a lot of read and error correction time will be consumed, resulting in low overall read performance, and even with the wear of time, the read retry may not correct the correct data, and at this time, the whole memory cell can only be discarded.
Disclosure of Invention
The invention aims to provide a data reading method, which solves the problem that the reading speed of a flash memory device is reduced and the service life of the flash memory device is shortened in the later use period, effectively improves the reading performance of the flash memory device, and prolongs the service life of the flash memory device.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention provides a data reading method, which comprises the following steps:
providing a storage unit, wherein the storage unit comprises a plurality of data storage positions;
a read retry table is configured on the storage unit;
judging whether data rereading is executed on a data storage position or not according to the read retry table, if so, setting a corresponding rereading step for the data rereading process, and if not, executing the next step;
requesting to read data at the data storage location;
if the read data is correct, the read data is output, if the read data is incorrect, a re-reading step is adopted to execute a re-reading mechanism until the re-reading is successful, the re-read data is output, and when the reading overrun parameters of the re-reading step corresponding to the re-reading success are larger than a preset threshold value, a data storage position abandoning mechanism is executed.
In one embodiment of the invention, the rereading mechanism comprises: the rereading step in the read rerun table which is preferentially used in the rereading process is a first rereading step.
In one embodiment of the invention, the rereading mechanism comprises: if the first rereading step corresponding to the data storage position is stored in the read rereading table, the first rereading step is preferentially adopted for rereading when a rereading mechanism is executed.
In one embodiment of the invention, the rereading mechanism comprises: and if the first rereading step corresponding to the data storage position is not stored in the rereading table, rereading according to the arrangement sequence of the rereading steps in the rereading table.
In one embodiment of the invention, the rereading mechanism comprises: and when the rereading is successful, saving the rereading step corresponding to the rereading success as a new first rereading step corresponding to the data storage position in the rereading table.
In one embodiment of the invention, the rereading mechanism comprises: and if the rereading in the first rereading step fails, continuously rereading according to the arrangement sequence of the rereading steps in the rereading table until the rereading is successful, and acquiring a new first rereading step in the rereading table.
In one embodiment of the invention, the rereading mechanism comprises: and if the reading overrun parameter of the rereading step corresponding to the successful rereading is larger than the preset threshold, the rereading step is not saved.
In one embodiment of the present invention, the preset threshold is a bit number of 80% of the maximum fault-tolerant amount of the error correction system.
In one embodiment of the present invention, the data storage location discard mechanism comprises: discarding the data storage location requested to be read, and reserving other data storage locations in the storage unit.
The present invention also provides a computer-readable storage device having a computer program stored thereon, which, when executed by a processor, implements the data reading method of the present invention.
The data reading method of the invention not only reduces the time required by read retry, but also solves the problem that the reading speed of the flash memory device is reduced and the service life of the flash memory device is shortened at the later stage of use by mixing two mechanisms, thereby effectively improving the reading performance of the flash memory device and prolonging the service life of the flash memory device. With the wear of time, when the condition that correct data can not be corrected even if the data is re-read occurs, the data storage position for storing the data can be abandoned in advance before the storage unit can not be used completely, and then other data storage positions in the storage unit are reserved, so that the problems of the reduction of the reading performance and the reduction of the service life of the flash memory device caused by abandoning the whole storage unit are avoided.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method of reading data according to the present invention;
FIG. 2 is a logic structure diagram of the data reading method of the present invention;
FIG. 3 is a schematic structural diagram of a solid state disk;
FIG. 4 is a schematic diagram of a memory cell before a data storage location discard mechanism is used;
FIG. 5 is a schematic diagram of a memory cell with a data storage location discard mechanism.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 3 to 5, the NAND flash memory product includes an MLC (multi-Level cell) flash memory and a TLC (triple Level cell) flash memory, the MLC (multi-Level cell) flash memory stores 2 bits of data in 1 cell 400(cell), that is, includes 2 data storage locations 401, and the TLC flash memory stores 3 bits of data in 1 cell 400, that is, includes 3 data storage locations 401. After the TLC flash memory is worn for a period of time, a situation that one data storage location 401 in the storage unit 400 cannot be read again successfully may occur, and at this time, if the whole storage unit 400 is discarded, not only the overall reading performance is low, but also the flash memory life is reduced.
Referring to fig. 1 to fig. 2, the present invention provides a data reading method, including:
s1, providing a storage unit 400, wherein the storage unit 400 comprises a plurality of data storage positions 401;
s2, configuring a read retry table 302 on the storage unit 400;
s3, judging whether data rereading is executed on the data storage position 401 or not according to the reading rerun table 302, if so, setting a corresponding rerun step for the data rerun process, and if not, executing the next step;
s4, requesting to read the data on the data storage position 401;
and S5, if the read data is correct, outputting the read data, if the read data is incorrect, executing a rereading mechanism by adopting a rereading step until rereading is successful, outputting the rereaded read data, and when the reading overrun parameters of the rereading step corresponding to the rereading success are greater than a preset threshold value, executing a data storage position 401 abandoning mechanism.
Referring to fig. 1 to 5, in step S1, a storage unit 400 is provided, where the storage unit 400 includes a plurality of data storage locations 401. The storage unit 400 in this embodiment is, for example, a storage unit 400 in a Solid State drive 200(Solid State Drives), where the Solid State drive 200 is a hard disk made of a Solid State electronic storage chip array, and is composed of a control unit and the storage unit 400(FLASH chip, DRAM chip). It adopts SATA-III, PCIe x8 or mSATA, M.2, ZIF, IDE, U.2, CF, CFast and other interfaces. The storage medium of the solid state disk 200(SSD) includes a NAND flash memory chip, which uses a flash memory chip as a storage medium and mainly includes a control chip, a cache chip, and a flash memory chip. The control chip is mainly used for allocating data, transferring data and connecting the flash memory chip and an external SATA interface. The cache chip is mainly used for assisting the control chip to process data. The flash memory chip is used for reading and writing data. The flash-based solid state disk 200 is mainly composed of a control unit 300 such as a host controller, a storage unit 400, a cache (optional), and an interface (such as SATA, SAS, PCIe, etc.) with the host 100. The main controller of the solid state disk 200 connects the storage unit 400 to a computer, and the main controller can operate a plurality of flash memory particles through a plurality of channels in parallel, thereby greatly improving the bandwidth of the bottom layer, and mainly comprising: error Checking and Correction (ECC), i.e., error correction system 301, Wear leveling (Wear leveling), bad block mapping (Badblock mapping), Read disturb (reading data of a block affects data of an adjacent block), management, and Read retry table 302. The NAND flash memory product includes an MLC flash memory and a TLC flash memory, the MLC flash memory stores 2 bits of data in 1 memory cell 400, that is, includes 2 data storage locations 401, the TLC flash memory stores 3 bits of data in 1 memory cell 400, that is, includes 3 data storage locations 401, and the TLC flash memory has a slower speed and a shorter life than the MLC flash memory. The MLC stores data such as "00", "01", "10", "11", which is also based on the determination of the voltage threshold, and represents "11" when the charged charge is less than 3.5V, "10" when the charged charge is between 3.5V and 4.0V, "01" when the charged charge is between 4V and 5.5V, and "00" when the charged charge is above 5.5V. For example, data stored in the TLC, such as "000", "001", "010", "011", "100", "101", "110", "111", is also determined based on the voltage threshold, and the demarcation point of the voltage threshold is finer, so that the reliability of each memory cell 400 is lower, the memory cell 400 in the embodiment is a memory cell 400 in a TLC flash memory, and after a period of wear of the TLC flash memory, a situation that one data in the memory cell 400 cannot be successfully reread may occur.
Referring to fig. 1 to 5, in step S2 and step S3, the storage unit 400 is configured with a read retry table 302, where the read retry table 302 includes a plurality of rereading steps, the rereading steps are sorted according to a preset manner, and the sorting manner may be sorting of rereading steps provided by a provider, or sorting of optimal rereading steps that have been saved in a previous rereading process, for example, a first rereading step stored in the rereading process, and if a first rereading step corresponding to the data storage location 401 has been saved in the read retry table 302, the first rereading step is preferentially adopted for rereading when a rereading mechanism is executed. If the first rereading step corresponding to the data storage location 401 is not stored in the reread table 302, rereading is performed according to the arrangement sequence of the rereading steps in the reread table 302. And judging whether data rereading is performed on the data storage position 401 according to the read rereading table 302, if so, setting a corresponding rereading step for the data rereading process, and if not, continuing to perform the next step.
Referring to fig. 1 to 5, in steps S4 and S5, the data storage location 401 is requested to be read, if the read data is correct, the read data is output, if the read data is incorrect, the rereading mechanism is executed in the rereading step until the rereading is successful, and the rereaded read data is output, and when the read overrun parameter of the rereading step corresponding to all the rereading successes is greater than a preset threshold, the data storage location 401 discarding mechanism is executed, the data storage location 401 requested to be read is discarded, and the preset threshold may be a bit number which is 80% of the maximum fault-tolerant number of the error correction system. In some embodiments, the host controller controls various operations of the solid state disk 200, and the host controller may implement its functions by executing a processor and various hardware circuits of firmware stored in the FW area of the flash memory, and execute various instructions for a write request, a cache refresh request, a read request, and the like from the host 100, in this embodiment, the host 100 issues a request to read data at the data storage location 401, and determines whether the read data is correct, and if the read data is correct, outputs the read data, and if the read data is incorrect, executes a reread mechanism using a reread step until reread is successful, and outputs the reread read data. In the read retry table 302, the rereading steps are arranged according to an initial sequence, when a rereading mechanism is initially executed, rereading is performed according to the initial sequence of the rereading steps, when rereading is successful, the rereading step corresponding to the rereading success is stored as a first rereading step corresponding to the data storage position 401 in the read retry table 302, at this time, the arrangement sequence of the rereading steps in the read retry table 302 is updated, then when the flash memory receives a data reading command again, whether the first rereading step corresponding to the data storage position 401 is stored in the read retry table 302 is judged first, if the first rereading step corresponding to the data storage position 401 is stored in the read retry table 302, the rereading is preferentially performed by using the first rereading step when the rereading mechanism is executed, and if the rereading by using the first rereading step fails, rereading is continuously performed according to the arrangement sequence of the rereading steps in the read retry table 302, until the rereading is successful, a new first rereading step in the read retry table 302 is obtained. If the first rereading step corresponding to the data storage position 401 is not stored in the rereading table 302, rereading is performed according to the arrangement sequence of the rereading steps in the rereading table 302 until rereading is successful, and the first rereading step in the rereading table 302 is obtained. For example, the memory cell 400 is provided with the read retry tables 302T (1) to 302T (49), which means that each of the read retry tables 302T (0) to T (49) includes different read voltages. The main controller presets the re-reading step to read the data of the page using the reading voltage of the read re-test table 302T (0). If the data error of the page read still cannot be corrected effectively by using the reading voltages of the retry table T (0), such as VthA (0) -VthG (0), the host controller continues to use the reading voltages VthA (1) -VthG (1) of the retry table 302T (1) to re-read the data of the page, and so on, until the reading voltages of the retry table, such as VthA (i) -VthG (i), can read the data of the page without error correction. The rereading step i at this time may be saved as the first rereading step of the data storage location 401. In this embodiment, when the rereading is successful, it is determined whether the reading overrun parameter of the rereading step corresponding to the rereading success is greater than a preset threshold, if the reading overrun parameter of the rereading step is greater than the preset threshold, it is proved that the rereading step is about to occur, and the rereading success cannot be found any more, at this time, the rereading step is not saved, and another rereading step is adopted in the rereading mechanism to reread the data of the data storage location 401, and if the reading overrun parameter of the rereading step is not greater than the preset threshold, the rereading step is saved as the first rereading step corresponding to the data storage location 401 in the rereading table 302, so that the time required for the next rereading retry is reduced. When the reading overrun parameters of the rereading steps corresponding to all rereading successes are larger than a preset threshold, if the reading overrun parameters are larger than the preset threshold, all rereading steps are proved to be invalid, and at the moment, a data storage position 401 abandoning mechanism is executed, and the data storage position 401 which is requested to be read is abandoned.
Referring to fig. 1 to 5, specifically, in the present embodiment, for example, in a TLC flash memory, each storage unit 400 includes three data storage locations 401, each data storage location 401 stores one data, before the host 100 requests to read the data in the storage unit 400, it is first determined whether to perform data re-reading according to the read retry table 302, if it is determined that data re-reading is performed, a corresponding re-reading step is set for the data re-reading process, and if there is a first re-reading step, priority use is set. If the data rereading is not judged to be executed, the data reading process is normally started, after the data reading process, whether the read data is correct or not is judged, if the read data is correct, the read data is directly output, if some read data is wrong, rereading is carried out aiming at a data storage position 401 with the reading mistake, namely, a rereading mechanism is started, if a first rereading step exists in a read rerun table 302, rereading is carried out by adopting a first rereading step, so that a large amount of rereading time can be saved, if the first rereading step does not exist in the read rerun table 302, rereading is carried out according to the sequence in the read rerun table 302, whether rereading is successful or not is judged after each rereading, if the rereading is unsuccessful, rereading is continued according to the sequence of the rereading steps until the rereading is successful, namely, the data is output when the data of the. Meanwhile, whether the reading over-limit parameter of the re-reading step with successful re-reading is larger than a preset threshold value or not is judged, if the reading over-limit parameter of the re-reading step is not larger than the preset threshold value, the re-reading step for correctly reading the data of the data storage position 401 is saved and updated as a first re-reading step in the reading re-test table 302, the first re-reading step is the most preferable re-reading step when the data stored in the data storage position 401 is re-read incorrectly in the subsequent data reading process, the first re-reading step is preferentially selected for re-reading the data stored in the data storage position 401, the optimal first re-reading step can be saved for each data storage position 401 through the re-reading mechanism, and the time for re-reading the data is further effectively saved. And judging the reading over-limit parameter of the applied rereading step when rereading is successful, if the reading over-limit parameter of the applied rereading step is greater than a preset threshold value, not saving the rereading step as the first rereading step, and when all rereading steps are successful, starting a data storage position 401 abandoning mechanism if the reading over-limit parameter of the applied rereading step is greater than the preset threshold value. This is because when the reading over-limit parameter of the rereading step which is successful in rereading is greater than the preset threshold, it represents that the rereading step is about to occur and the data in the data storage location 401 cannot be rereaded successfully, when the reading over-limit parameter of the partial rereading step is greater than the preset threshold, another rereading step can be used for rereading, but when all rereading steps are successful, the reading over-limit parameter of the rereading step is greater than the preset threshold, the whole storage unit 400 can be discarded, and the data is not stored in the storage unit 400, in this embodiment, a data storage location 401 discarding mechanism is adopted, that is, the whole storage unit 400 is retained, only the data storage location 401 which is about to be unsuccessfully rereaded in the storage unit 400 is discarded, for example, one of the three data storage locations 401 of one storage unit 400 in the TLC flash memory, and the other two data storage locations 401 are retained, discarding the data storage location 401 means that all data in the data storage location 401 is not used, and the discarded data storage location 401 is written with garbage data during the write operation to correctly complete the write operation of, for example, the TLC flash memory, so that the memory cell 400 of the TLC flash memory is in a state similar to the state in which the memory cell 400 in the MLC flash memory only includes two data storage locations 401, which may not affect the read performance of the flash memory, and may also improve the service life of the flash memory.
The present invention also provides a computer-readable storage device having a computer program stored thereon, which, when executed by a processor, implements the data reading method of the present invention.
The data reading method of the invention not only reduces the time required by read retry, but also solves the problem that the reading speed of the flash memory device is reduced and the service life of the flash memory device is shortened at the later stage of use by mixing two mechanisms, thereby effectively improving the reading performance of the flash memory device and prolonging the service life of the flash memory device. With the wear of time, when the situation that the correct data cannot be corrected even if the memory cell 400 is re-read occurs, the data storage location 401 for storing the data can be discarded before the memory cell 400 can not be used at all, and then other data storage locations 401 in the memory cell 400 are reserved, so that the problems of the reading performance reduction and the service life reduction of the flash memory device caused by discarding the whole memory cell 400 are avoided.
The above disclosure of selected embodiments of the invention is intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A method for reading data, comprising the steps of:
providing a storage unit, wherein the storage unit comprises a plurality of data storage positions;
a read retry table is configured on the storage unit;
judging whether data rereading is executed on a data storage position or not according to the read retry table, if so, setting a corresponding rereading step for the data rereading process, and if not, executing the next step;
requesting to read data at the data storage location;
if the read data is correct, the read data is output, if the read data is incorrect, a re-reading step is adopted to execute a re-reading mechanism until the re-reading is successful, the re-read data is output, and when the reading overrun parameters of the re-reading step corresponding to the re-reading success are larger than a preset threshold value, a data storage position abandoning mechanism is executed.
2. A data reading method according to claim 1, wherein the rereading mechanism comprises: the rereading step in the read rerun table which is preferentially used in the rereading process is a first rereading step.
3. The data reading method according to claim 2, wherein the rereading mechanism comprises: if the first rereading step corresponding to the data storage position is stored in the read rereading table, the first rereading step is preferentially adopted for rereading when a rereading mechanism is executed.
4. The data reading method according to claim 2, wherein the rereading mechanism comprises: and if the first rereading step corresponding to the data storage position is not stored in the rereading table, rereading according to the arrangement sequence of the rereading steps in the rereading table.
5. The data reading method according to claim 2, wherein the rereading mechanism comprises: and when the rereading is successful, saving the rereading step corresponding to the rereading success as a new first rereading step corresponding to the data storage position in the rereading table.
6. The data reading method according to claim 2, wherein the rereading mechanism comprises: and if the rereading in the first rereading step fails, continuously rereading according to the arrangement sequence of the rereading steps in the rereading table until the rereading is successful, and acquiring a new first rereading step in the rereading table.
7. A data reading method according to claim 1, wherein the rereading mechanism comprises: and if the reading overrun parameter of the rereading step corresponding to the successful rereading is larger than the preset threshold, the rereading step is not saved.
8. A method for reading data according to claim 7, wherein the predetermined threshold is 80% of the maximum error-tolerant number of error correction systems.
9. The data reading method of claim 1, wherein the data storage location discard mechanism comprises: discarding the data storage location requested to be read, and reserving other data storage locations in the storage unit.
10. A computer-readable storage device having stored thereon a computer program which, when executed by a processor, implements a data reading method as claimed in any one of claims 1 to 9.
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| CN113223583A (en) * | 2021-05-14 | 2021-08-06 | 深圳市硅格半导体有限公司 | Method for rereading data in NAND Flash bad block, electronic equipment and storage medium |
| CN113325798A (en) * | 2021-07-08 | 2021-08-31 | 宜科(天津)电子有限公司 | Sensor data processing system |
| CN114138190A (en) * | 2021-11-19 | 2022-03-04 | 北京得瑞领新科技有限公司 | Data reading method and device of flash memory device, storage medium and flash memory device |
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