WO2020077670A1 - 一种晶圆减薄磨削力在线测量装置及方法 - Google Patents

一种晶圆减薄磨削力在线测量装置及方法 Download PDF

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Publication number
WO2020077670A1
WO2020077670A1 PCT/CN2018/112610 CN2018112610W WO2020077670A1 WO 2020077670 A1 WO2020077670 A1 WO 2020077670A1 CN 2018112610 W CN2018112610 W CN 2018112610W WO 2020077670 A1 WO2020077670 A1 WO 2020077670A1
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Prior art keywords
wafer
grinding force
grinding
pressure sensor
film pressure
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PCT/CN2018/112610
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English (en)
French (fr)
Inventor
秦飞
张理想
赵帅
陈沛
安彤
代岩伟
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北京工业大学
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Priority to US16/483,027 priority Critical patent/US11404329B2/en
Publication of WO2020077670A1 publication Critical patent/WO2020077670A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the invention belongs to the field of ultra-precision processing of semiconductor wafer materials, and relates to an online testing device and method for wafer thinning grinding force.
  • Wafer thinning is an indispensable process in the field of integrated circuit (IC) manufacturing. With the increase in high-density and miniaturized electronic devices, higher requirements have been placed on wafer thinning technology. Wafer thinning based on the wafer spin grinding method is the current mainstream wafer thinning technology. During the grinding process, the abrasive particles on the surface of the grinding wheel interact with the wafer surface to achieve material removal. This process inevitably causes damage to the surface of the silicon wafer, such as phase changes, dislocations, and micro-cracks. These damages will reduce wafer strength and affect subsequent processing yield and package product reliability.
  • the present invention proposes a wafer thinning and grinding force measuring device and method.
  • the device places the thin film pressure sensor between the processing wafer and the worktable.
  • the signal of the membrane pressure sensor is introduced into the cavity of the carrying table through the threading hole of the working table.
  • the cavity of the bearing table is placed with signal acquisition and wireless transmission modules.
  • the wireless signal is monitored externally by a computer equipped with a wireless receiver.
  • An on-line measuring device for wafer thinning grinding force is characterized in that it includes: semiconductor wafer, bonding glue, thin film pressure sensor, working table, bearing table, wafer spindle base, data acquisition and wireless transmission module, Wireless receiving module.
  • the semiconductor wafer is fixed on one side of the worktable surface of the worktable by bonding glue.
  • the thickness of the bonding glue is less than 300 ⁇ m.
  • the bottom surface of the membrane pressure sensor and the bottom surface of the bonding glue are located on the same plane, and the thickness thereof is 3-10 ⁇ m greater than the thickness of the bonding glue.
  • a threading hole is provided in the working table.
  • the threading hole has a rectangular parallelepiped structure and penetrates the working table.
  • the threading hole has a cross-sectional length greater than the width of the membrane pressure sensor and a cross-sectional width greater than the thickness of the membrane pressure sensor.
  • the membrane pressure device is connected to the data acquisition and wireless transmission module through the wire through the wire hole.
  • the data acquisition and wireless transmission module is located in the cavity of the carrying platform.
  • the wireless receiving module monitors the grinding force voltage signal in real time through the wireless transmission protocol, and monitors the grinding force in real time.
  • the processed wafer is one of a silicon wafer, a silicon carbide wafer, a gallium arsenide wafer, a cadmium zinc telluride wafer, and a zinc oxide wafer.
  • the bonding adhesive is one of temporary bonding adhesive, blue film, and double-sided adhesive tape.
  • the carrying platform contains a cavity and a screw hole for placing and fixing a data collection and wireless transmission module.
  • Step 1 According to the grinding force online measurement device provided by this patent, establish the wafer thinning grinding force online measurement device.
  • Step 2 Provide a calibrated hammer, the hammer hammer head geometry is exactly the same as the grinding wheel grinding tooth geometry.
  • the surface of the processed wafer is swept with a constant force.
  • the force hammer crosses the center position of the film pressure sensor, the pressure F 1 of the hammer and the voltage U 1 of the film pressure sensor are recorded. Change the pressure and repeat the above steps to establish The relationship between the voltage U.
  • Step 3 Install the wafer thinning grinding force online measurement device on the grinding machine table, grind the processed wafer, and monitor the voltage signal of the film pressure sensor in real time.
  • the voltage signal increases first and then decreases when the grinding wheel contacts and leaves the sensor.
  • Record the maximum voltage signal as U t , and according to the relationship between the pressure and voltage established in step 2, push back the grinding force F t , which is the measurement of grinding force.
  • the grinding force measuring device and method provided by the present invention the grinding force in the grinding process of semiconductor wafers can be monitored in real time, which is of great significance for semiconductor processing and reducing grinding damage.
  • the invention also has the following advantages: the sensor part uses a thin film pressure sensor, which has a short response time and high test accuracy; the data transmission adopts a wireless transmission design, which can monitor the grinding force in real time during the rotation of the wafer and the spindle to avoid the wafer The risk of winding during the optional process; the sensor adopts a distributed design, which can monitor the distribution of grinding force along the radial and crystal directions of the wafer.
  • FIG. 1 (a) is a schematic structural diagram of an online grinding force measuring device according to an embodiment of the present invention
  • FIG. 1 (b) is a cross-sectional view of an online grinding force measuring device according to an embodiment of the present invention.
  • FIG. 1 To provide an on-line measuring device for wafer thinning grinding force, as shown in FIG. 1, comprising: semiconductor wafer (1), bonding glue (2), thin film pressure sensor (3), working table (4), bearing Table (5), wafer spindle base (6), data acquisition and wireless transmission module, wireless receiving module.
  • the semiconductor wafer (1) is connected to the work surface (404) of the work surface (4) through bonding glue (2).
  • the thickness of the bonding glue (2) should be less than 300 ⁇ m.
  • the bottom surface of the thin film pressure sensor (3) and the bottom surface of the bonding glue (2) are located on the same plane, and the thickness thereof is greater than the thickness of the bonding glue (2) by 3-10 ⁇ m.
  • a threading hole (403) is provided in the working table (4).
  • the threading hole (403) has a rectangular parallelepiped structure and penetrates the working table (4). Its cross-sectional length is greater than the width of the thin film pressure sensor wire, and its cross-sectional width is greater than the thickness of the thin film pressure sensor wire.
  • the membrane pressure device (3) is connected to the data acquisition and wireless transmission module through a wire through hole (403).
  • the data collection and wireless transmission module is located inside the bearing station (5).
  • the wafer spindle base (6) is located on the grinding machine table, and the carrier table is fixed by vacuum suction or bolting.
  • the grinding wheel interacts with the processing wafer (1), and the force acting on the processing wafer (1) is transmitted to the thin film pressure sensor (2), and the thin film pressure sensor (2) senses After the pressure changes, the voltage will change.
  • the voltage signal is sent by the data collection and wireless transmission module to the wireless receiving device through the wire.
  • the wireless receiving device collects the wireless signal and displays it in real time.
  • the bonding glue (2) may be one of temporary bonding glue, blue film, and double-sided adhesive tape, which is used to connect and support the processed wafer (1).
  • the membrane pressure sensor (3) is one or a combination of a single-point membrane pressure sensor and an array membrane pressure sensor.
  • the principle is one of resistive thin film pressure sensor and capacitive thin film pressure sensor.
  • the number of sensors can be one or multiple. Its position can be distributed along the crystal direction of the wafer, the radius of the wafer, or it can be freely combined.
  • the Flexiforce A201 single-point thin-film thin-film pressure sensor from TEKSCAN is used, and the wafer is Si (100) wafer.
  • Four sensors are arranged along the ⁇ 110> and ⁇ 100> crystal directions of the wafer, and the radial distances along the wafer are 0mm, 30mm, 60mm, and 90mm, respectively.
  • the sensors are also arranged at the positions where the radius distance between the ⁇ 110> and ⁇ 100> crystal directions are 60 mm and 90 mm, respectively. In this example, a total of 9 sensors are arranged.
  • the working table (4) includes a working table (404) and a fixed table (405), and the height of the fixed table (404) is not lower than the height of the fixed table (405).
  • the working table (4) includes a threading hole (403) and a bolt hole (402).
  • the threading hole (403) penetrates the working table (4) for the membrane pressure sensor (3) to pass through.
  • the threading holes (403) are processed by wire cutting, corresponding to the number of sensors, and the number of threading holes is also nine.
  • the carrying platform (5) includes a cavity (503) and a screw hole (502).
  • the connection between the bearing table (5) and the grinding machine table may be one of vacuum suction or bolt connection. In this example, the bolt connection is used.
  • the data collection and wireless transmission module includes resistance / voltage conversion, analog-to-digital conversion, signal amplification, signal collection and wireless transmission module.
  • the wireless transmission module is based on Zigbee, Bluetooth, WIFI, 4G / 5G wireless transmission.
  • the wireless transmission module uses T7 Pro wireless transmission equipment from LABJACK of the United States, which uses wireless WIFI transmission protocol to transmit signals.
  • Step 1 According to the on-line measuring device for wafer thinning grinding force proposed by the present invention, an online measuring device for wafer thinning grinding force is established.
  • Step 2 Provide a calibrated hammer, the hammer hammer head geometry is exactly the same as the grinding wheel grinding tooth geometry.
  • the surface of the processed wafer is swept with a constant force.
  • the force hammer crosses the center position of the film pressure sensor, the pressure F 1 of the hammer and the voltage U 1 of the film pressure sensor are recorded. Change the pressure and repeat the above steps to establish The relationship between the voltage U.
  • Step 3 Install the wafer thinning grinding force online measurement device on the grinding machine table, grind the processed wafer, and monitor the voltage signal of the film pressure sensor in real time.
  • the voltage signal increases first and then decreases when the grinding wheel contacts and leaves the sensor.
  • Record the maximum voltage signal as U t , and according to the relationship between the pressure and voltage established in step 2, push back the grinding force F t , which is the measurement of grinding force.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
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Abstract

一种晶圆减薄磨削力在线测量装置，包括半导体晶圆（1）、键合胶（2）、薄膜压力传感器（3）、工作台（4）、承载台（5）、晶圆主轴底座（6）、数据处理与无线传输模块、无线接收模块，半导体晶圆通过键合胶与工作台的工作台面连接，一种晶圆减薄磨削力在线测量方法，利用晶圆减薄磨削力在线测量装置实时监测半导体晶圆磨削过程中的磨削力，薄膜压力传感器响应时间短，测试精度高，能够在晶圆和主轴旋转过程中对磨削力进行实时监测，避免晶圆旋转绕线的风险。

Description

一种晶圆减薄磨削力在线测量装置及方法 技术领域
本发明属于半导体晶圆材料超精密加工领域，涉及一种晶圆减薄磨削力在线测试装置及方法。
背景
半导体晶圆减薄加工是集成电路(IC)制造领域不可缺少的工艺。随着高密度和小型化电子器件的增加，对晶圆减薄技术提出了更高的要求。基于晶圆自旋转磨削方法的晶圆减薄是当前主流的晶圆减薄技术。磨削过程中，砂轮表面磨粒与晶圆表面相互作用实现材料的去除。这一过程不可避免地造成硅晶圆表面损伤，如相变、位错、微裂纹等。这些损伤会降低晶圆强度，影响后续加工良率和封装产品可靠性。为降低磨削损伤，一些学者研究了磨削参数(砂轮转速、晶圆转速、主轴进给速率)对亚表面损伤的影响。这些研究对理解磨削参数对损伤的影响和优化磨削工艺具有重要意义。然而，磨削力是造成损伤的本质因素，对磨削过程中磨削力进行实时监测有助于在磨削阶段控制磨质量，同时对研究磨削损伤的形成有重要意义。
目前，商用磨削机台，如日本DISCO公司DFG系列、Okamoto公司GNX系列以及中国电子科技集团有限公司生产的β系列，多采用主轴电流监控的方法间接反映磨削力。该方法操作简单，但是电流的变化不够灵敏，不能满足精密加工的需求。同时主轴电流受磨削法向力，切向力的共同影响，通过控制主轴电流监控磨削状态存在诸多问题。为获得半导体晶圆磨削过程中的磨削力，一些学者将传感器安装在空气主轴上，通过主轴的变形反应磨削力。但该力同样不是接触区域的磨削力。此外，上述间接测量方式均采用有线信号传输方式，与真实磨削状态存在较大的差别。
发明内容
为了解决上述问题，本发明提出了一种晶圆减薄与磨削力测量装置及方法。该装置将薄膜压力传感器置于加工晶圆和工作台之间。薄膜压力传感器信号通过工作台穿线孔引入承载台空腔内。承载台空腔 放置信号采集和无线传输模块。外部通过安装无线接收器的电脑对无线信号进行实施监测。
本发明技术方案如下：
一种晶圆减薄磨削力在线测量装置，其特征在于，它包括：半导体晶圆，键合胶，薄膜压力传感器，工作台，承载台，晶圆主轴底座，数据采集与无线传输模块，无线接收模块。半导体晶圆通过键合胶固定在工作台的工作台面的一侧。键合胶的厚度小于300μm。薄膜压力传感器的底面与键合胶的底面位于同一平面，其厚度大于键合胶的厚度3-10μm。工作台内设置穿线孔，所述穿线孔呈长方体结构，贯穿于工作台，其横截面长度大于薄膜压力传感器的宽度，其横截面宽度大于薄膜压力传感器的厚度。薄膜压力器通过导线穿过穿线孔与数据采集和无线传输模块连接。数据采集和无线传输模块位于承载台空腔内。无线接收模块通过无线传输协议实时监测磨削力电压信号，对磨削力实时监测。
作为本专利的进一步改进，其特征在于，所述加工晶圆为硅晶圆、碳化硅晶圆、砷化镓晶圆、碲锌镉晶圆、氧化锌晶圆的一种。
作为本专利的进一步改进，其特征在于，所述键合胶为临时键合胶、蓝膜、双面胶带的一种。
作为本专利的进一步改进，其特征在于，所述承载台包含空腔和螺孔，用于放置和固定数据采集和无线传输模块。
一种晶圆减薄磨削力在线测量方法，其特征在于，包括以下步骤：
步骤1：根据本专利提供的磨削力在线测量装置，建立晶圆减薄磨削力在线测量装置。
步骤2：提供一已标定力锤，所述力锤锤头几何形状与磨轮磨齿几何形状完全相同。用恒定力划过加工晶圆表面，当力锤划过薄膜压力传感器中心位置时，记录力锤的压力F 1和薄膜压力传感器的电压U 1，改变压力大小，重复上述步骤，建立压力F与电压U之间的关系。
步骤3：将晶圆减薄磨削力在线测量装置安装在磨削机台上，对加工晶圆进行磨削，并对薄膜压力传感器电压信号进行实时监测。磨 轮接触和离开传感器时电压信号先增大后减小。记录最大电压信号为U t，根据步骤2建立的压力与电压的关系，反推出磨削力F t，即为测量磨削力。对应的应力为σ＝F t/A max，式中A max为磨齿与薄膜压力传感器的最大接触面积。
有益效果
利用本发明提供的磨削力测量装置及方法，可以实时监测半导体晶圆磨削过程中的磨削力，对半导体的加工，降低磨削损伤具有重要意义。本发明还具有如下优点：传感器部分采用薄膜压力传感器，响应时间短，测试精度高；数据的传输采用无线传输设计，能够在晶圆和主轴旋转过程中对磨削力进行实时监测，避免晶圆选装过程中绕线的风险；传感器采用分布式设计，能够监测磨削力沿晶圆径向，晶向的分布。
附图说明
图1(a)为本发明实施例的磨削力在线测量装置的结构示意图
图1(b)为本发明实施例的磨削力在线测量装置的剖面图。
具体实施方式
为使本发明能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
提供一种晶圆减薄磨削力在线测量装置，如图1所示，包含：半导体晶圆(1)，键合胶(2)，薄膜压力传感器(3)，工作台(4)，承载台(5)，晶圆主轴底座(6)，数据采集与无线传输模块，无线接收模块。所述半导体晶圆(1)通过键合胶(2)与工作台(4)的工作台面(404)连接。所述键合胶(2)的厚度应小于300μm。所述薄膜压力传感器(3)的底面与键合胶(2)底面位于同一平面，其厚度大于键合胶(2)的厚度3-10μm。所述工作台(4)内设置穿线孔(403)。所述穿线孔(403)呈长方体结构，贯穿于工作台(4)，其横截面长度大于薄膜压力传感器导线的宽度，其横截面宽度大于薄膜压力传感器导线的厚度。所述薄膜压力器(3)通过导线穿过穿线孔(403)与数据采集和无线传输模块连接。所述数据采集和无线传输模块位于承载台(5)内部。晶圆主轴底座(6)位于磨削机台上，通过真空吸附 或者螺栓固定的方式固定承载台。
由上，晶圆磨削过程中，磨轮与加工晶圆(1)相互作用，作用在加工晶圆(1)上的力会传递到薄膜压力传感器(2)上，薄膜压力传感器(2)感知到压力的变化后电压会发生变化，该电压信号通过导线被数据采集和无线传输模块发出传递给无线接收装置，无线接收装置采集无线信号，并实时显示。
所述键合胶(2)可以为临时键合胶、蓝膜、双面胶带的一种，用于连接和支撑加工晶圆(1)。
所述薄膜压力传感器(3)为单点式薄膜压力传感器、阵列式薄膜压力传感器的一种或组合。其原理为电阻式薄膜压力传感器、电容式薄膜压力传感器的一种。传感器的数量可以是一个，也可以是多个。其位置可以沿晶圆的晶向分布，晶圆半径方向分布，也可以自由组合。本例选用TEKSCAN公司的Flexiforce A201单点式薄膜薄膜压力传感器，晶圆采用Si(100)晶圆。沿晶圆的<110>和<100>晶向分别布置4个传感器，其沿晶圆的半径距离分别为0mm、30mm、60mm、90mm。在<110>和<100>晶向之间半径距离分别为60mm和90mm位置处同样布置传感器，本例共布置9个传感器。
所述工作台(4)包含工作台面(404)和固定台面(405)，所述固定台面(404)高度不低于固定台面(405)高度。所述工作台(4)包含穿线孔(403)和螺栓孔(402)。所述穿线孔(403)贯穿工作台(4)，用于薄膜压力传感器(3)穿过。本例中穿线孔(403)采用线切割的方式加工而成，与传感器的数量对应，穿线孔的数量同样为9个。
所述承载台(5)包含空腔(503)和螺孔(502)。承载台(5)与磨削机台的连接可以是真空吸附或螺栓连接的一种。本例中采用螺栓连接的方式进行连接。
所述数据采集及无线传输模块包含电阻/电压转换、模数转换、信号放大、信号的采集与无线传输模块。所述无线传输模块为基于Zigbee、蓝牙、WIFI、4G/5G无线传输一种。本例中无线传输模块采用美国LABJACK公司的T7 pro无线传输设备，该设备采用无线 WIFI传输协议传输信号。
提供一种晶圆减薄磨削力在线测量方法，包括以下步骤：
步骤1：根据本发明提出的晶圆减薄磨削力在线测量装置方法建立晶圆减薄磨削力在线测量装置。
步骤2：提供一已标定力锤，所述力锤锤头几何形状与磨轮磨齿几何形状完全相同。用恒定力划过加工晶圆表面，当力锤划过薄膜压力传感器中心位置时，记录力锤的压力F 1和薄膜压力传感器的电压U 1，改变压力大小，重复上述步骤，建立压力F与电压U之间的关系。
步骤3：将晶圆减薄磨削力在线测量装置安装在磨削机台上，对加工晶圆进行磨削，并对薄膜压力传感器电压信号进行实时监测。磨轮接触和离开传感器时电压信号先增大后减小。记录最大电压信号为U t，根据步骤2建立的压力与电压的关系，反推出磨削力F t，即为测量磨削力。对应的应力为σ＝F t/A max，式中A max为磨齿与晶圆的接触面积。

Claims (10)

  1. 一种晶圆减薄磨削力在线测量装置，其特征在于，包含：半导体晶圆(1)，键合胶(2)，薄膜压力传感器(3)，工作台(4)，承载台(5)，晶圆主轴底座(6)，数据采集与无线传输模块，无线接收模块；所述半导体晶圆(1)通过键合胶(2)与工作台(4)的工作台面(404)连接；所述键合胶(2)的厚度小于300μm；所述薄膜压力传感器(3)的底面与键合胶(2)的底面位于同一平面，其厚度大于键合胶(2)的厚度3-10μm；所述工作台(4)内设置穿线孔(403)；所述穿线孔(403)呈长方体结构，贯穿于工作台(4)；所述薄膜压力器(3)通过导线穿过穿线孔(403)与数据采集和无线传输模块连接；所述数据采集和无线传输模块位于承载台(5)的空腔(503)内部，并通过螺栓与螺孔(502)固定；所述承载台(5)与磨削机台晶圆主轴底座(6)连接。
  2. 根据权利要求1所述的晶圆减薄磨削力在线测量装置，其特征在于，所述加工晶圆(1)为硅晶圆、碳化硅晶圆、砷化镓晶圆、碲锌镉晶圆、氧化锌晶圆的一种。
  3. 根据权利要求1所述的晶圆减薄磨削力在线测量装置，其特征在于，所述键合胶(2)为临时键合胶、蓝膜、双面胶带的一种。
  4. 根据权利要求1所述的晶圆磨削力在线测量装置，其特征在于，所述薄膜压力传感器(3)为单点式薄膜压力传感器、阵列式薄膜压力传感器的一种或组合。
  5. 根据权利要求1所述的晶圆减薄磨削力在线测量装置，其特征在于，所述薄膜压力传感器的布置沿晶圆的半径方向和/或晶圆的晶向均匀分布。
  6. 根据权利要求1所述的晶圆减薄磨削力在线测量装置，其特征在于，所述工作台(4)包含工作台面(404)、固定台面(405)和螺栓孔(402)，所述工作台面(404)的高度不低于固定台面(405)的高度，工作台(4) 的厚度不小于1cm。
  7. 根据权利要求1所述的晶圆减薄磨削力在线测量装置，其特征在于，所述承载台(5)包含空腔(503)和螺孔(502)。
  8. 根据权利要求1所述的晶圆减薄磨削力在线测量装置，其特征在于，承载台(5)与磨削机台的连接方式为螺栓连接或真空吸附连接的一种。
  9. 一种晶圆减薄磨削力在线测量方法，其特征在于，包括以下步骤：
    步骤1：根据权利要求1建立晶圆减薄磨削力在线测量装置；
    步骤2：提供一已标定力锤，用恒定力划过加工晶圆表面，当力锤划过薄膜压力传感器中心位置时，记录力锤的压力F 1和薄膜压力传感器的电压U 1，改变压力大小，重复上述步骤，建立压力F与电压U之间的关系；
    步骤3：将晶圆减薄磨削力在线测量装置安装在磨削机台上，对加工晶圆进行磨削，并对薄膜压力传感器电压信号进行实时监测；磨轮接触和离开传感器时电压信号先增大后减小；记录最大电压信号为U t，根据步骤2建立的压力与电压的关系，反推出磨削力F t，即为测量磨削力；对应的应力为σ＝F t/A max，式中A max为磨齿与传感器接触的最大面积。
  10. 根据权利要求9所述的一种晶圆减薄磨削力在线测量方法，其特征在于，所述力锤锤头几何形状与磨轮磨齿几何形状完全相同。
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