WO2020073391A1 - 一种光罩和显示面板的制作方法 - Google Patents

一种光罩和显示面板的制作方法 Download PDF

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Publication number
WO2020073391A1
WO2020073391A1 PCT/CN2018/113560 CN2018113560W WO2020073391A1 WO 2020073391 A1 WO2020073391 A1 WO 2020073391A1 CN 2018113560 W CN2018113560 W CN 2018113560W WO 2020073391 A1 WO2020073391 A1 WO 2020073391A1
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Prior art keywords
data
manufacturing
exposure
photomask
support column
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Ceased
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PCT/CN2018/113560
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English (en)
French (fr)
Inventor
何怀亮
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HKC Co Ltd
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HKC Co Ltd
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Priority to US16/319,487 priority Critical patent/US20210356859A1/en
Publication of WO2020073391A1 publication Critical patent/WO2020073391A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the present application relates to the field of display technology, and more specifically, to a manufacturing method of a photomask and a display panel.
  • the liquid crystal display has many advantages such as thin body, power saving, no radiation, etc., and has been widely used.
  • Most of the liquid crystal displays known to the inventors are backlight type liquid crystal displays, which include a liquid crystal panel and a backlight module (Backlight Module).
  • the working principle of the liquid crystal panel is to place liquid crystal molecules in two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the rotation direction of the liquid crystal molecules, so as to refract the light of the backlight module to generate a picture.
  • LCD technology is constantly improving.
  • various manufacturers have allocated resources in the factory in order to increase production capacity.
  • it can increase production capacity, and on the other hand, it can also make factory production more rational.
  • the array substrate process and the color film substrate process need to use different exposure machines, and the manufacturing cost of the photomask is high.
  • the technical problem to be solved by the present application is to provide a method for manufacturing a mask and a display panel that reduces the manufacturing cost of the mask.
  • the present application provides a method for manufacturing a photomask.
  • the manufacturing method of the photomask includes:
  • the component includes a support column;
  • the exposure conditions include baking parameters, exposure parameters, and development parameters; and
  • the experimental data includes first line width data with the component, and the first line width data follows The first opening width of the photomask under the same exposure condition corresponds;
  • the production data includes the second line width data of the component and the second opening width data of the corresponding photomask;
  • the reference data includes the components in the production environment and the experimental environment And the line width ratio of its corresponding reticle.
  • the baking parameters include a baking temperature and a baking time
  • the development parameters include a development time
  • the exposure parameters include an exposure dose and a first opening width of a photomask.
  • the value range of the exposure dose is 40-50mj / cm2, and the value range of the first opening width is 200-300um.
  • the step of simulating the exposure conditions of the support column in the experimental environment includes: filtering out the first wavelength that is different from the exposure machine of the production environment in the exposure machine of the experimental environment.
  • the range of the first wavelength is between 300nm-350nm.
  • the filtered first wavelength is 333 nm.
  • the support column includes a main support column and a sub support column, and the exposure conditions for manufacturing the main support column and the sub support column are the same.
  • the present application also discloses a method for manufacturing a photomask, which includes:
  • the exposure conditions include baking parameters, exposure parameters, and development parameters
  • the experimental data include first line width data of the support column, and the first line width data follows the first opening of the photomask under the same exposure conditions Width corresponds
  • the production data includes the second line width data of the support column and the second opening width data of the corresponding reticle
  • the reference data includes the line width ratio of the support column and its corresponding reticle in the production environment and the experimental environment;
  • the baking parameters include baking temperature and baking time; the development parameters include development time; the exposure parameters include exposure dose and first opening width of the photomask;
  • the value range of the exposure dose is 40-50mj / cm2, and the value range of the first opening width is between 200-300um;
  • the step of simulating the exposure conditions of the support column in the experimental environment includes: filtering the first wavelength in the exposure machine in the experimental environment to be 333 nm;
  • the support column includes a main support column and a sub support column, and the exposure conditions for manufacturing the main support column and the sub support column are the same.
  • the present application also discloses a method for manufacturing a display panel.
  • the display panel includes a photomask.
  • the method for manufacturing the display panel includes:
  • the mask of the component is manufactured.
  • the photomask of the support column needs to be manufactured in a production environment. Only the data generated by the production environment is available for reference. It is necessary to make a large number of test masks to make a photomask that meets the production requirements. The cost is very high. In this application, the exposure conditions of the supporting column are simulated in the experimental environment. The same photomask can have two sets of data for reference and comparison in the production environment and the experimental environment. The accuracy is greatly improved, which can effectively reduce the cost of manufacturing the photomask.
  • FIG. 1 is a schematic structural diagram of a liquid crystal display panel according to one embodiment of the present application.
  • FIG. 2 is a schematic diagram of a method for manufacturing a photomask according to one embodiment of the present application
  • FIG. 3 is a schematic diagram of spectrum comparison between VNS and Canon exposure machine according to one embodiment of the present application
  • FIG. 4 is a schematic diagram of filtered wavelength according to one embodiment of the present application.
  • FIG. 5 is a schematic diagram of a method for manufacturing a photomask of a support column according to another embodiment of the present application.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more.
  • the term “including” and any variations thereof are intended to cover non-exclusive inclusions.
  • connection should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • installation should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • FIG. 1 is a schematic structural diagram of a liquid crystal display panel.
  • the LCD panel shown includes
  • the first substrate includes a first glass substrate 5 on which an active switch array 6 is provided;
  • the second substrate includes a second glass substrate 7 on which a black matrix 8 is sequentially formed ,
  • Color resist layer 9 and support column 10 the color resist layer has four color resists for each pixel, namely red color resist R, green color resist G, blue color resist B and white color resist W, the color The resistance is arranged between two adjacent black matrices, and the support column is arranged between two adjacent color resistors.
  • the mask manufacturing method includes:
  • the photomask needs to be produced in a production environment. Only the data generated by the production environment is available for reference. It is necessary to make a large number of test masks to make a mask that meets the production requirements. The cost is very high. In this application, the exposure conditions of the support column are simulated in the experimental environment. The same photomask can have two sets of data for reference and comparison in the production environment and the experimental environment. The accuracy is greatly improved, which can effectively reduce the cost of manufacturing the photomask.
  • the components of the present application may also be components such as black matrix, color resist, data lines, scan lines, and support columns that require a photomask process.
  • the support columns are taken as an example for description below.
  • the component includes a support column; the exposure conditions include baking parameters, exposure parameters, and development parameters; the experimental data includes first line width data with the component, and the first line width data is the same as that of the photomask under the same exposure conditions The first opening width corresponds; the production data includes the second line width data of the component and the second opening width data of the corresponding reticle; the reference data includes the line width ratio of the component and its corresponding reticle in the production environment and the experimental environment.
  • the height of the support column in the display panel is high, and the slight difference in the size of the photomask will be magnified in the manufacturing process.
  • the photomask corresponding to the support column has higher requirements, and repeated testing is required to make a qualified photomask. Therefore, compared with The production cost of other masks is higher, and the cost reduction effect is obvious.
  • the baking parameters include the baking temperature and the baking time; the development parameters include the development time; and the exposure parameters include the exposure dose and the first opening width of the photomask.
  • the exposure dose ranges from 40-50mj / cm2, and the first opening width ranges from 200-300um.
  • the step of simulating the exposure conditions of the support column in the experimental environment includes: filtering out the first wavelength that is different from the exposure machine in the experimental environment and the exposure machine in the production environment.
  • the compromised method can select a wavelength with a large difference, and filter out the first wavelength with a difference through a filter plate to obtain a light source similar to the production environment at a lower cost.
  • the first wavelength range is between 300nm-350nm. Further optionally, the filtered first wavelength is 333 nm.
  • the array substrate process uses Canon brand exposure machine, while the color film substrate process uses VNS brand exposure machine. Therefore, if you want to use the Canon brand exposure machine in the color film substrate process, you need to compare the spectrum of the two exposure machines.
  • a represents the spectrum of the VNS exposure machine and b represents the spectrum of the Canon exposure machine.
  • 333nm belongs to the wavelength with the largest difference between the two exposure machines, that is, the peak value of the wavelength band shown in the region C in FIG. 4, so this wavelength is mainly filtered out.
  • the support pillar includes a main support pillar and a sub support pillar, and the exposure conditions for making the main support pillar and the sub support pillar are the same.
  • the same exposure conditions help to compare the data of the main support column and the sub-support column laterally, and find out the reticle opening data required for support columns of different sizes.
  • the main support column and the sub support column represent support columns of different sizes. Since the support columns manufactured in the experimental environment do not need to be used in production, from the perspective of saving time and improving efficiency, a mask process is made in glass Supporting columns of various sizes are made on the board at the same time. It is very appropriate to collect multiple sets of data and should not be constrained by the thinking of production conditions.
  • an embodiment of the present application discloses a mask manufacturing method for supporting columns
  • the mask manufacturing method includes:
  • the exposure conditions include baking parameters, exposure parameters and development parameters;
  • the experimental data includes the first line width data corresponding to the support column, the first line width data corresponds to the first opening width under the same exposure conditions;
  • the production data includes the support column first Two line width data and the corresponding second aperture width data of the photomask;
  • the reference data includes the line width ratio of the support column and its corresponding photomask in the production environment and the experimental environment; there are multiple sets of exposure conditions, the baking parameters and the development parameters of each group the same;
  • the baking parameters include baking temperature and baking time; the development parameters include development time; the exposure parameters include exposure dose and the first opening width of the photomask;
  • the exposure dose ranges from 40-50mj / cm2, and the first opening width ranges from 200-300um;
  • the step of simulating the exposure conditions of the support column in the experimental environment includes: filtering the first wavelength in the exposure machine of the experimental environment to 333 nm.
  • the support column includes a main support column and a sub support column, and the exposure conditions for making the main support column and the sub support column are the same.
  • the implementation effect of this application is directly related to the amount of data collected. Therefore, in order to continuously improve the effect, you can build a database and write reference data to the database for storage.
  • the photomask needs to be produced in a production environment. Only the data generated by the production environment is available for reference. It is necessary to make a large number of test masks to make a mask that meets the production requirements. The cost is very high. In this application, the exposure conditions of the supporting column are simulated in the experimental environment. The same photomask can have two sets of data for reference and comparison in the production environment and the experimental environment. The accuracy is greatly improved, which can effectively reduce the cost of manufacturing the photomask.
  • the height of the support column in the display panel is high, and the slight difference in the size of the photomask will be magnified in the manufacturing process.
  • the photomask corresponding to the support column has higher requirements, and repeated testing is required to make a qualified photomask. Therefore, compared with The production cost of other photomasks is higher, and the cost reduction effect is obvious.
  • Exposure-related parameters have a greater impact on the size of the support column.
  • the analysis is difficult and has little effect on the accuracy of the data.
  • the compromised method can select a wavelength with a large difference, and filter out the first wavelength with a difference through a filter plate to obtain a light source similar to the production environment at a lower cost.
  • the array substrate process uses Canon brand exposure machine, while the color film substrate process uses VNS brand exposure machine. Therefore, if you want to use the Canon brand exposure machine in the color film substrate process, you need to compare the spectrum of the two exposure machines.
  • a represents the spectrum of the VNS exposure machine and b represents the spectrum of the Canon exposure machine.
  • 333nm belongs to the wavelength with the largest difference between the two exposure machines, that is, the peak value of the wavelength band shown in the region C in FIG. 4, so this wavelength is mainly filtered out.
  • the same exposure conditions help to compare the data of the main support column and the sub-support column laterally, and find out the reticle opening data required for support columns of different sizes.
  • the main support column and the sub support column represent support columns of different sizes. Since the support columns manufactured in the experimental environment do not need to be used in production, from the perspective of saving time and improving efficiency, a mask process is made in glass Supporting columns of various sizes are made on the board at the same time. It is very appropriate to collect multiple sets of data and should not be constrained by the thinking of production conditions.
  • a manufacturing method of a display panel including the manufacturing method of the above photomask.
  • the panel of this application can be a TN panel (full name Twisted Nematic, namely twisted nematic panel), IPS panel (In-PaneSwitcing, plane conversion), VA panel (Multi-domain Vertica Aignment, multi-quadrant vertical alignment technology), of course , Can also be other types of panels, just apply.
  • TN panel full name Twisted Nematic, namely twisted nematic panel
  • IPS panel In-PaneSwitcing, plane conversion
  • VA panel Multi-domain Vertica Aignment, multi-quadrant vertical alignment technology

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

本申请公开了一种光罩和显示面板的制作方法。制作方法包括：模拟光罩对应生产的部件的曝光条件；制作部件，记录实验数据；将实验数据跟生产环境记录的生产数据对比，形成参考数据；根据参考数据制作部件的光罩。

Description

一种光罩和显示面板的制作方法
本申请要求于2018年10月08日提交中国专利局、申请号为CN201811167258.5、发明名称为“一种光罩和显示面板的制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，更具体的说，涉及一种光罩和显示面板的制作方法。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
液晶显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。发明人知晓的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(Backlight Module)。液晶面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
液晶显示器技术在不断进步，在日益发展的市场下，各家厂商为了增大产能对厂内的资源进行了调配，这样一方面可以增大产能，另一方面也可以使厂内生产更加合理化。
阵列基板制程和彩膜基板制程需要采用不同的曝光机，光罩的制作成本高昂。
技术解决方案
有鉴于上述的缺陷，本申请所要解决的技术问题是提供一 种降低光罩制作成本的光罩和显示面板的制作方法。
为实现上述目的，本申请提供了一种光罩的制作方法。所述光罩制作方法包括：
在实验环境模拟所述光罩对应生产的部件的曝光条件；
在实验环境制作部件，记录实验数据；
将实验数据跟生产环境记录的生产数据对比，形成参考数据；
根据参考数据制作部件的光罩；
可选的，所述部件包括支撑柱；所述曝光条件包括烘烤参数、曝光参数和显影参数；所述实验数据包括与所述部件的第一线宽数据，所述第一线宽数据跟同一曝光条件下的光罩的第一开口宽度对应；所述生产数据包括所述部件的第二线宽数据和对应光罩的第二开口宽度数据；所述参考数据包括生产环境和实验环境下部件及其对应光罩的线宽比。
可选的，所述烘烤参数包括烘烤温度和烘烤时间；所述显影参数包括显影时间；所述曝光参数包括曝光剂量和光罩的第一开口宽度。
可选的，所述曝光剂量的取值范围在40-50mj/cm2,所述第一开口宽度取值范围在200-300um之间。
可选的，所述曝光条件有多组，每组的烘烤参数和显影参数相同。
可选的，所述在实验环境模拟支撑柱的曝光条件的步骤包 括：滤除实验环境的曝光机中跟生产环境的曝光机差异的第一波长。
可选的，所述第一波长的范围在300nm-350nm之间。
可选的，滤除的第一波长为333nm。
可选的，所述支撑柱包括主支撑柱和子支撑柱，制作所述主支撑柱和所述子支撑柱的曝光条件相同。
本申请还公开了一种光罩的制作方法，所述光罩制作方法包括：
在实验环境模拟支撑柱的曝光条件；
在实验环境制作所述支撑柱，记录实验数据；
将所述实验数据跟生产环境记录的生产数据对比，形成参考数据；以及
根据所述参考数据制作所述支撑柱的光罩；
所述曝光条件包括烘烤参数、曝光参数和显影参数；所述实验数据包括支撑柱的第一线宽数据，所述第一线宽数据跟同一曝光条件下的所述光罩的第一开口宽度对应；所述生产数据包括支撑柱的第二线宽数据和对应光罩的第二开口宽度数据；所述参考数据包括生产环境和实验环境下支撑柱及其对应光罩的线宽比；所述曝光条件有多组，每组的烘烤参数和显影参数相同；
所述烘烤参数包括烘烤温度和烘烤时间；所述显影参数包括显影时间；所述曝光参数包括曝光剂量和光罩的第一开口宽度；
所述曝光剂量的取值范围在40-50mj/cm2,所述第一开口宽度取值范围在200-300um之间；
所述在实验环境模拟支撑柱的曝光条件的步骤包括：滤除实验环境的曝光机中的第一波长为333nm；
所述支撑柱包括主支撑柱和子支撑柱，制作所述主支撑柱和所述子支撑柱的曝光条件相同。
本申请还公开了一种显示面板的制作方法，所述显示面板包括光罩，所述显示面板的制作方法包括：
在实验环境模拟所述光罩对应生产的部件的曝光条件；
在实验环境制作所述部件，记录实验数据；
将所述实验数据跟生产环境记录的生产数据对比，形成参考数据；以及
根据所述参考数据制作所述部件的光罩。
支撑柱的光罩需要在生产环境下制作，只有生产环境产生的数据可供参考，需要制作大量的测试光罩才能做出符合生产要求的光罩，成本非常高昂。而本申请在实验环境下模拟支撑柱的曝光条件，同样的光罩在生产环境和实验环境下可以有两组数据供参考对比，准确性大幅提升，能有效减少制作光罩的成本。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附 图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请的其中一个实施例的液晶显示面板的结构示意图；
图2是本申请的其中一个实施例的一种光罩制作方法示意图；
图3是本申请的其中一个实施例的VNS和Canon曝光机的频谱对比示意图；
图4是本申请的其中一个实施例的过滤的波长示意图；
图5是本申请的另一实施例支撑柱的光罩制作方法示意图。
本申请的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方 位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
图1所示为一种液晶显示面板的结构示意图。所示液晶面 板包括
第一基板1、液晶盒2和第二基板3，所述第一基板和第二基板平行相向设置，液晶盒位于第一基板和第二基板之间；所述第一基板和第二基板周围通过胶框4固定。所述第一基板包括第一玻璃基板5，所述第一基板上设有主动开关阵列6；所述第二基板包括第二玻璃基板7，所述第二玻璃基板上依次形成有黑矩阵8、色阻层9和支撑柱10，所述色阻层对应每个像素有四个色阻，分别是红色色阻R、绿色色阻G、蓝色色阻B和白色色阻W，所述色阻设置在相邻两个黑矩阵之间，所述支撑柱设置在相邻两个色阻之间。
下面结合附图和可选的实施例对本申请作进一步说明。
作为本申请的一实施例，参考2至图4所示，公开了一种光罩的制作方法。光罩制作方法包括：
S21、在实验环境模拟光罩对应生产的部件的曝光条件；
S22、在实验环境制作部件，记录实验数据；
S23、将实验数据跟生产环境记录的生产数据对比，形成参考数据；
S24、根据参考数据制作部件的光罩。
光罩需要在生产环境下制作，只有生产环境产生的数据可供参考，需要制作大量的测试光罩才能做出符合生产要求的光罩，成本非常高昂。而本申请在实验环境下模拟支撑柱的曝光条件，同样的光罩在生产环境和实验环境下可以有两组数据供参考 对比，准确性大幅提升，能有效减少制作光罩的成本。
本申请的部件还可以是黑矩阵、色阻、数据线、扫描线、支撑柱等显示面板中需要光罩制程的部件，下面以支撑柱为例举例说明。
在一实施例中，部件包括支撑柱；曝光条件包括烘烤参数、曝光参数和显影参数；实验数据包括与部件的第一线宽数据，第一线宽数据跟同一曝光条件下的光罩的第一开口宽度对应；生产数据包括部件的第二线宽数据和对应光罩的第二开口宽度数据；参考数据包括生产环境和实验环境下部件及其对应光罩的线宽比。
支撑柱在显示面板中的高度较高，光罩尺寸的细微差异都会在制程中得到放大，支撑柱对应的光罩的要求较高，需要反复测试才能做出合格的光罩，因此，相比其他光罩制作成本更高，降成本效果明显。
参考表1，在一实施例中，烘烤参数包括烘烤温度和烘烤时间；显影参数包括显影时间；曝光参数包括曝光剂量和光罩的第一开口宽度。曝光剂量的取值范围在40-50mj/cm2,第一开口宽度取值范围在200-300um之间。
Figure PCTCN2018113560-appb-000001
Figure PCTCN2018113560-appb-000002
表1、使用模拟的Canon曝光机设置不同的曝光条件
Figure PCTCN2018113560-appb-000003
表2、模拟曝光机在不同曝光条件下主支撑柱特性值
Figure PCTCN2018113560-appb-000004
表3、模拟曝光机在不同曝光条件下辅支撑柱特性值
参考表2、3，从实验数据来看，在这些区间范围内取值，产生的支撑柱断差差异较小，且都接近于实际的支撑柱尺寸。
在一实施例中，曝光条件有多组，每组的烘烤参数和显影参数相同。
研究发现，曝光相关的参数对支撑柱的尺寸影响较大，为了重点突出影响支撑柱尺寸的主要因素，可以固定相对稳定的烘烤参数和显影参数，而着重改变影响较大的曝光参数，能有效简化数据分析难度，且对数据的准确性影响不大。
在一实施例中，在实验环境模拟支撑柱的曝光条件的步骤包括：滤除实验环境的曝光机中跟生产环境的曝光机差异的第一波长。
实验环境和生产环境的数据要有可比性，就要去两种环境下的曝光机产生的光源，特别是波长要尽量保持一致。但要做到完全一致是非常困难的，而且花费的成本会很高昂。因此，折中的方式可以选择差异较大的波长，通过过滤板滤除有差异的第一波长，可以在成本较低的情况下得到跟生产环境相近的光源。
在一实施例中，第一波长的范围在300nm-350nm之间。进一步可选的，滤除的第一波长为333nm。
一般情况下，阵列基板制程采用是Canon品牌的曝光机，而彩膜基板制程使用VNS品牌的曝光机。因此，如果要在彩膜基板制程中通用Canon品牌的曝光机，就需要对两个曝光机的频谱进行对比。
参考图3，a代表VNS曝光机频谱，b代表Canon曝光机频谱，通过实验数据对比发现，实验室的曝光机在300nm-350nm区间段有明显的尖峰波段，跟生产环境的曝光机差异较大，因此过滤这个区间的波长，可以显著缩小两种曝光机的光源差异。
从实验数据看333nm属于两种曝光机差异最大的波长，即为图4中C区域所示波长段的尖峰值，因此重点滤除这一波长。
在一实施例中，支撑柱包括主支撑柱和子支撑柱，制作主支撑柱和子支撑柱的曝光条件相同。
相同的曝光条件，有利于横向对比主支撑柱和子支撑柱的数据，找出不同尺寸支撑柱所需的光罩开口数据。实际上，主支撑柱和子支撑柱代表的是不同尺寸的支撑柱，由于在实验环境下制作的支撑柱不需要应用于生产的，从节约时间、提高效率的角度看，一次光罩制程在玻璃板上同时制作出多种尺寸的支撑柱，可以搜集多组数据是非常合适的，不应该受到生产条件的思维束缚。
如图5所示，本申请实施例公布了一种支撑柱的光罩制
作方法。光罩制作方法包括：
S51、在实验环境模拟支撑柱的曝光条件；
S52、在实验环境制作支撑柱，记录实验数据；
S53、将实验数据跟生产环境记录的生产数据对比，形成参考数据；
S54、根据参考数据制作支撑柱的光罩。
曝光条件包括烘烤参数、曝光参数和显影参数；实验数据包括与支撑柱的第一线宽数据，第一线宽数据跟同一曝光条件下的第一开口宽度对应；生产数据包括支撑柱的第二线宽数据和对 应光罩的第二开口宽度数据；参考数据包括生产环境和实验环境下支撑柱及其对应光罩的线宽比；曝光条件有多组，每组的烘烤参数和显影参数相同；
烘烤参数包括烘烤温度和烘烤时间；显影参数包括显影时间；曝光参数包括曝光剂量和光罩的第一开口宽度；
曝光剂量的取值范围在40-50mj/cm2,第一开口宽度取值范围在200-300um之间；
在实验环境模拟支撑柱的曝光条件的步骤包括：滤除实验环境的曝光机中的第一波长为333nm。
支撑柱包括主支撑柱和子支撑柱，制作主支撑柱和子支撑柱的曝光条件相同。
本申请的实施效果跟采集的数据量有直接的关系。因此，为了持续提升效果，可以建立数据库，将参考数据写入数据库中存放。
光罩需要在生产环境下制作，只有生产环境产生的数据可供参考，需要制作大量的测试光罩才能做出符合生产要求的光罩，成本非常高昂。而本申请在实验环境下模拟支撑柱的曝光条件，同样的光罩在生产环境和实验环境下可以有两组数据供参考对比，准确性大幅提升，能有效减少制作光罩的成本。
支撑柱在显示面板中的高度较高，光罩尺寸的细微差异都会在制程中得到放大，支撑柱对应的光罩的要求较高，需要反复测试才能做出合格的光罩，因此，相比其他光罩制作成本更高， 降成本效果明显。
曝光相关的参数对支撑柱的尺寸影响较大，为了重点突出影响支撑柱尺寸的主要因素，可以固定相对稳定的烘烤参数和显影参数，而着重改变影响较大的曝光参数，能有效简化数据分析难度，且对数据的准确性影响不大。
参考表2、3，从实验数据来看，在表1提供的范围内取值，产生的支撑柱断差差异较小，且都接近于实际的支撑柱尺寸。
实验环境和生产环境的数据要有可比性，就要去两种环境下的曝光机产生的光源，特别是波长要尽量保持一致。但要做到完全一致是非常困难的，而且花费的成本会很高昂。因此，折中的方式可以选择差异较大的波长，通过过滤板滤除有差异的第一波长，可以在成本较低的情况下得到跟生产环境相近的光源。
一般情况下，阵列基板制程采用是Canon品牌的曝光机，而彩膜基板制程使用VNS品牌的曝光机。因此，如果要在彩膜基板制程中通用Canon品牌的曝光机，就需要对两个曝光机的频谱进行对比。
参考图3，a代表VNS曝光机频谱，b代表Canon曝光机频谱，通过实验数据对比发现，实验室的曝光机在300nm-350nm区间段有明显的尖峰波段，跟生产环境的曝光机差异较大，因此过滤这个区间的波长，可以显著缩小两种曝光机的光源差异。
从实验数据看333nm属于两种曝光机差异最大的波长， 即为图4中C区域所示波长段的尖峰值，因此重点滤除这一波长。
相同的曝光条件，有利于横向对比主支撑柱和子支撑柱的数据，找出不同尺寸支撑柱所需的光罩开口数据。实际上，主支撑柱和子支撑柱代表的是不同尺寸的支撑柱，由于在实验环境下制作的支撑柱不需要应用于生产的，从节约时间、提高效率的角度看，一次光罩制程在玻璃板上同时制作出多种尺寸的支撑柱，可以搜集多组数据是非常合适的，不应该受到生产条件的思维束缚。
作为本申请的另一实施例，公开了一种显示面板的制作方法，包括上述光罩的制作方法。
本申请的面板可以是TN面板(全称为Twisted Nematic，即扭曲向列型面板)、IPS面板(In-PaneSwitcing，平面转换)、VA面板(Multi-domain Vertica Aignment，多象限垂直配向技术)，当然，也可以是其他类型的面板，适用即可。
以上内容是结合具体的实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (17)

  1. 一种光罩的制作方法，所述光罩制作方法包括：
    在实验环境模拟所述光罩对应生产的部件的曝光条件；
    在实验环境制作所述部件，记录实验数据；
    将所述实验数据跟生产环境记录的生产数据对比，形成参考数据；以及
    根据所述参考数据制作所述部件的光罩。
  2. 如权利要求1所述的一种光罩的制作方法，其中，所述部件包括支撑柱；
    所述曝光条件包括烘烤参数、曝光参数和显影参数；所述实验数据包括与所述部件的第一线宽数据，所述第一线宽数据跟同一曝光条件下的光罩的第一开口宽度对应；所述生产数据包括所述部件的第二线宽数据和对应光罩的第二开口宽度数据；所述参考数据包括生产环境和实验环境下部件及其对应光罩的线宽比。
  3. 如权利要求2所述的一种光罩的制作方法，其中，所述烘烤参数包括烘烤温度和烘烤时间；所述显影参数包括显影时间；所述曝光参数包括曝光剂量和光罩的第一开口宽度。
  4. 如权利要求3所述的一种光罩的制作方法，其中，所述曝光剂量的取值范围在40-50mj/cm2,所述第一开口宽度取值范围在200-300um之间。
  5. 如权利要求2所述的一种光罩的制作方法，其中，所述曝光条件有多组，每组的烘烤参数和显影参数相同。
  6. 如权利要求2所述的一种光罩的制作方法，其中，所述在实验环境模拟支撑柱的曝光条件的步骤包括：滤除实验环境的曝光机中跟生产环境的曝光机差异的第一波长。
  7. 如权利要求6所述的一种光罩的制作方法，其中，所述第一波长的范围在300nm-350nm之间。
  8. 如权利要求1所述的一种光罩的制作方法，其中，所述支撑柱包括主支撑柱和子支撑柱，制作所述主支撑柱和所述子支撑柱的曝光条件相同。
  9. 一种光罩的制作方法，所述光罩制作方法包括：
    在实验环境模拟支撑柱的曝光条件；
    在实验环境制作所述支撑柱，记录实验数据；
    将所述实验数据跟生产环境记录的生产数据对比，形成参考数据；以及
    根据所述参考数据制作所述支撑柱的光罩；
    所述曝光条件包括烘烤参数、曝光参数和显影参数；所述实验数据包括支撑柱的第一线宽数据，所述第一线宽数据跟同一曝光条件下的所述光罩的第一开口宽度对应；所述生产数据包括支撑柱的第二线宽数据和对应光罩的第二开口宽度数据；所述参考数据包括生产环境和实验环境下支撑柱及其对应光罩的线宽比；所述曝光条件有多组，每组的烘烤参数和显影参数相同；
    所述烘烤参数包括烘烤温度和烘烤时间；所述显影参数包括显影时间；所述曝光参数包括曝光剂量和光罩的第一开口宽度；
    所述曝光剂量的取值范围在40-50mj/cm2,所述第一开口宽度取值范围在200-300um之间；
    所述在实验环境模拟支撑柱的曝光条件的步骤包括：滤除实验环境的曝光机中的第一波长为333nm；
    所述支撑柱包括主支撑柱和子支撑柱，制作所述主支撑柱和所述子支撑柱的曝光条件相同。
  10. 一种显示面板的制作方法，所述显示面板包括光罩，所述显示面板的制作方法包括：
    在实验环境模拟所述光罩对应生产的部件的曝光条件；
    在实验环境制作所述部件，记录实验数据；
    将所述实验数据跟生产环境记录的生产数据对比，形成参考数据；以及
    根据所述参考数据制作所述部件的光罩。
  11. 如权利要求10所述的一种显示面板的制作方法，其中，所述部件包括支撑柱；
    所述曝光条件包括烘烤参数、曝光参数和显影参数；所述实验数据包括与所述部件的第一线宽数据，所述第一线宽数据跟同一曝光条件下的光罩的第一开口宽度对应；所述生产数据包括所述部件的第二线宽数据和对应光罩的第二开口宽度数据；所述参考数据包括生产环境和实验环境下部件及其对应光罩的线宽比。
  12. 如权利要求11所述的一种显示面板的制作方法，其中，所述烘烤参数包括烘烤温度和烘烤时间；所述显影参数包括显影时间； 所述曝光参数包括曝光剂量和光罩的第一开口宽度。
  13. 如权利要求12所述的一种显示面板的制作方法，其中，所述曝光剂量的取值范围在40-50mj/cm2,所述第一开口宽度取值范围在200-300um之间。
  14. 如权利要求11所述的一种显示面板的制作方法，其中，所述曝光条件有多组，每组的烘烤参数和显影参数相同。
  15. 如权利要求11所述的一种显示面板的制作方法，其中，所述在实验环境模拟支撑柱的曝光条件的步骤包括：滤除实验环境的曝光机中跟生产环境的曝光机差异的第一波长。
  16. 如权利要求15所述的一种显示面板的制作方法，其中，所述第一波长的范围在300nm-350nm之间。
  17. 如权利要求10所述的一种显示面板的制作方法，其中，所述支撑柱包括主支撑柱和子支撑柱，制作所述主支撑柱和所述子支撑柱的曝光条件相同。
PCT/CN2018/113560 2018-10-08 2018-11-02 一种光罩和显示面板的制作方法 Ceased WO2020073391A1 (zh)

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