WO2020067186A1 - フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法 - Google Patents

フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法 Download PDF

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WO2020067186A1
WO2020067186A1 PCT/JP2019/037648 JP2019037648W WO2020067186A1 WO 2020067186 A1 WO2020067186 A1 WO 2020067186A1 JP 2019037648 W JP2019037648 W JP 2019037648W WO 2020067186 A1 WO2020067186 A1 WO 2020067186A1
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adhesive
film
semiconductor element
film adhesive
semiconductor
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PCT/JP2019/037648
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English (en)
French (fr)
Japanese (ja)
Inventor
由衣 國土
慎太郎 橋本
山本　和弘
奏美 中村
恒則 大平
紘平 谷口
昂平 平尾
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日立化成株式会社
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Priority to KR1020217008789A priority Critical patent/KR102629864B1/ko
Priority to SG11202102895VA priority patent/SG11202102895VA/en
Priority to JP2020549304A priority patent/JP7435458B2/ja
Priority to CN201980062235.4A priority patent/CN112740380A/zh
Publication of WO2020067186A1 publication Critical patent/WO2020067186A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/28—Metal sheet
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a film adhesive, an adhesive sheet, a semiconductor device, and a method for manufacturing the same.
  • a stacked MCP Multi Chip Package
  • semiconductor elements semiconductor elements (semiconductor chips) are stacked in multiple stages
  • higher speed, higher density, and higher integration of semiconductor packages are being promoted.
  • the use of copper as a wiring material for semiconductor chip circuits has increased the speed.
  • a lead frame made of copper or the like is being used.
  • copper has the property of being easily corroded, and from the viewpoint of cost reduction, the coating material for securing the insulation of the circuit surface tends to be simplified, so that the electrical characteristics of the semiconductor package are secured. It tends to be difficult.
  • copper ions generated by corrosion move inside the adhesive, and electric signals tend to be easily lost in the semiconductor chip or between the semiconductor chips.
  • Patent Literature 1 discloses a complex with a cation having a thermoplastic resin having an epoxy group and no carboxyl group and a heterocyclic compound having a tertiary nitrogen atom as a ring atom.
  • An adhesive sheet for manufacturing a semiconductor device, comprising an organic complex-forming compound, is disclosed.
  • the present inventors have made intensive studies and found that by combining a specific acrylic rubber and a specific component in a film adhesive, it is possible to sufficiently suppress copper ion permeation in the adhesive, and furthermore, the adhesive strength And found that the present invention was completed.
  • One aspect of the present invention is a film adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, wherein the film adhesive is a thermosetting resin, a curing agent, and an acrylic rubber.
  • the film adhesive is a thermosetting resin, a curing agent, and an acrylic rubber.
  • the acrylic rubber has few (or no) structural units derived from acrylonitrile.
  • an acrylic rubber having a small amount (or no containing unit) derived from acrylonitrile it may be possible to sufficiently suppress the permeation of copper ions in the adhesive.
  • the reason for such an effect is not necessarily clear, but the present inventors have found that acrylonitrile, which easily forms a complex with copper ions (having a high complex stability constant), has a small (or no) nitrile group in acrylonitrile. It is considered that the absorption of copper ions by the adhesive is weakened, and as a result, the permeation of copper ions in the adhesive is suppressed.
  • acrylic rubber having a small number of (or not including) structural units derived from acrylonitrile tends to hardly form a phase-separated structure, and the difficulty of the phase-separated structure has an effect on suppression of copper ion permeation in the adhesive. It is possible that they are giving.
  • the film adhesive which contains a heterocyclic compound, has a tendency to sufficiently suppress copper ion permeation in the adhesive and to have further excellent adhesive strength.
  • the heterocyclic compound may be an aromatic compound having three or more nitrogen atoms.
  • the heterocyclic compound may be at least one selected from the group consisting of a triazole compound and a tetrazole compound.
  • the heterocyclic compound may be used in an amount of 0.01 to 2 parts by mass based on 100 parts by mass of the thermosetting resin, the curing agent, and the acrylic rubber.
  • the film adhesive may further contain an inorganic filler, and the average particle size of the inorganic filler may be 1 ⁇ m or less.
  • the present invention provides an adhesive sheet comprising a base material and the above-mentioned film adhesive provided on one surface of the base material.
  • the substrate may be a dicing tape.
  • the present invention includes a semiconductor element, a support member for mounting the semiconductor element, and an adhesive member provided between the semiconductor element and the support member, for bonding the semiconductor element and the support member. And a semiconductor device which is a cured product of the above film adhesive.
  • the support member may include a member made of copper.
  • the present invention provides a method for manufacturing a semiconductor device, comprising a step of bonding a semiconductor element and a support member using the above-mentioned film adhesive.
  • the present invention provides a method of attaching a film-like adhesive of the above-mentioned adhesive sheet to a semiconductor wafer, and cutting the semiconductor wafer to which the film-like adhesive has been attached to form a plurality of individual pieces.
  • a method of manufacturing a semiconductor device comprising: a step of producing a semiconductor element with a film-like adhesive; and a step of bonding the semiconductor element with a film-like adhesive to a support member.
  • the method for manufacturing a semiconductor device may further include a step of heating the semiconductor element with the film-like adhesive bonded to the support member using a reflow furnace.
  • a film adhesive which can sufficiently suppress the permeation of copper ions in the adhesive and has excellent adhesive strength. Further, according to the present invention, an adhesive sheet and a semiconductor device using such a film-like adhesive are provided. Further, according to the present invention, there is provided a method of manufacturing a semiconductor device using a film adhesive or an adhesive sheet.
  • FIG. 2 is a schematic cross-sectional view illustrating one embodiment of a semiconductor device.
  • FIG. 6 is a schematic sectional view showing another embodiment of the semiconductor device.
  • a numerical range indicated by using “to” indicates a range including numerical values described before and after “to” as a minimum value and a maximum value, respectively.
  • the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in other stages. Good.
  • the upper limit or the lower limit of the numerical ranges may be replaced with the values shown in the embodiments.
  • (meth) acrylate means acrylate or its corresponding methacrylate.
  • the same applies to other similar expressions such as a (meth) acryloyl group and a (meth) acrylic copolymer.
  • the film adhesive is a film adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, wherein the film adhesive is (A) a thermosetting resin, It contains (B) a curing agent, (C) an acrylic rubber, and (D) a heterocyclic compound, and has a high absorption peak derived from stretching vibration of a carbonyl group in an infrared absorption spectrum of the (C) acrylic rubber.
  • the P CO is, when the height of the peak derived from stretching vibration of the nitrile group was P CN, satisfies the condition of P CO and P CN is represented by the following formula (1), the thickness of the film-like adhesive 50 ⁇ m or less is there.
  • the film adhesive is obtained by converting an adhesive composition containing (A) a thermosetting resin, (B) a curing agent, (C) an acrylic rubber, and (D) a heterocyclic compound into a film. It can be obtained by molding.
  • the film-like adhesive and the adhesive composition may be capable of undergoing a semi-cured (B-stage) state and becoming a completely cured (C-stage) state after the curing treatment.
  • Thermosetting resin may be an epoxy resin from the viewpoint of adhesiveness.
  • the epoxy resin can be used without any particular limitation as long as it has an epoxy group in the molecule.
  • Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, bisphenol A novolak epoxy resin, and bisphenol F novolak epoxy resin.
  • Stilbene type epoxy resin triazine skeleton containing epoxy resin, fluorene skeleton containing epoxy resin, triphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, polyfunctional phenols And polycyclic aromatic diglycidyl ether compounds such as anthracene and anthracene.
  • the component (A) may be a cresol novolak type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of the tackiness and flexibility of the film.
  • the epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 110 to 290 g / eq.
  • the epoxy equivalent of the epoxy resin is in such a range, there is a tendency that the fluidity can be secured while maintaining the bulk strength of the film adhesive.
  • the component (B) may be a phenol resin that can be a curing agent for an epoxy resin.
  • the phenol resin can be used without any particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol, dihydroxynaphthalene and formaldehyde.
  • Novolak-type phenolic resin obtained by condensation or co-condensation with a compound having an aldehyde group of phenol group phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolak, phenol and / or And phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl. These may be used alone or in combination of two or more.
  • the phenol resin may be a phenol aralkyl resin or a naphthol aralkyl resin.
  • the hydroxyl equivalent of the phenol resin may be 70 g / eq or more or 70 to 300 g / eq.
  • the hydroxyl equivalent of the phenol resin is 70 g / eq or more, the storage elastic modulus of the film tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to foaming, outgassing and the like. .
  • the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenol resin is from 0.30 / 0.70 to 0.70 / 0.30 from the viewpoint of curability. , 0.35 / 0.65-0.65 / 0.35, 0.40 / 0.60-0.60 / 0.40, or 0.45 / 0.55-0.55 / 0.45 May be.
  • the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and to obtain more sufficient fluidity.
  • the total content of the components (A) and (B) is 5 to 50 parts by mass, 10 to 40 parts by mass based on 100 parts by mass of the total mass of the components (A), (B) and (C). It may be parts by weight, or 15 to 30 parts by weight.
  • the elastic modulus tends to be improved by crosslinking.
  • the total content of the component (A) and the component (B) is 50 parts by mass or less, the film handling property tends to be maintained.
  • Component (C) Acrylic Rubber
  • the component (C) is a rubber having a structural unit derived from a (meth) acrylate ester as a main component.
  • the content of the structural unit derived from the (meth) acrylate in the component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of the structural units.
  • the component (C) may include a structural unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, and a carboxyl group.
  • the component (C) may include a constituent unit derived from acrylonitrile as long as the condition of the formula (1) described below is satisfied, but it is more effective to suppress copper ion permeation in the adhesive.
  • the component (C) may not contain a constituent unit derived from acrylonitrile, since the component is possible and the embedding property is more excellent.
  • the carbonyl group is mainly derived from the constituent unit (meth) acrylate
  • the nitrile group is mainly derived from the constituent unit acrylonitrile.
  • the height of the absorption peak (P CO ) derived from the stretching vibration of the carbonyl group and the height of the peak (P CN ) derived from the stretching vibration of the nitrile group mean those defined in Examples.
  • a small P CN / P CO means that the component (C) has few constituent units derived from acrylonitrile. Therefore, the component (C) that does not include a structural unit derived from acrylonitrile can theoretically satisfy the condition of the formula (1).
  • P CN / P CO is less than 0.070, 0.065 or less, 0.060 or less, 0.055 or less, 0.050 or less, 0.040 or less, 0.030 or less, 0.020 or less, or It may be 0.010 or less.
  • P CN / P CO is less than 0.070, it may be possible to sufficiently suppress the permeation of copper ions in the adhesive. Further, as the value of P CN / P CO becomes smaller, the permeation of copper ions in the adhesive can be more sufficiently suppressed. Further, as the value of P CN / P CO decreases, the cohesive force of the component (C) decreases, and the embedding property tends to be more excellent.
  • the glass transition temperature (Tg) of the component (C) may be ⁇ 50 to 50 ° C. or ⁇ 30 to 30 ° C.
  • Tg of the component (C) is -50 ° C or more
  • the flexibility of the adhesive tends to be prevented from becoming too high. This makes it easier to cut the film adhesive during wafer dicing, thereby preventing the occurrence of burrs.
  • the Tg of the component (C) is 50 ° C. or lower, a decrease in the flexibility of the adhesive tends to be suppressed. This tends to make it easy to sufficiently fill voids when the film adhesive is attached to the wafer. Further, it is possible to prevent chipping at the time of dicing due to a decrease in the adhesive strength of the wafer.
  • the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, Thermo Plus 2 manufactured by Rigaku Corporation).
  • the weight average molecular weight (Mw) of the component (C) may be 100,000 to 3,000,000 or 200,000 to 2,000,000.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.
  • ⁇ ⁇ As a commercially available component (C) which does not contain a structural unit derived from acrylonitrile, for example, KH-CT-865 (manufactured by Hitachi Chemical Co., Ltd.) and the like are listed.
  • the content of the component (C) is 50 to 95 parts by mass, 60 to 90 parts by mass, or 70 to 85 parts by mass based on 100 parts by mass of the total of the components (A), (B) and (C). It may be parts by mass.
  • the content of the component (C) is in such a range, there is a tendency that permeation of copper ions in the adhesive can be more sufficiently suppressed.
  • the film adhesive by containing the component (D), has a tendency to sufficiently suppress copper ion permeation in the adhesive and to have further excellent adhesive strength.
  • the component (D) may be an aromatic compound having three or more nitrogen atoms, and may be at least one selected from the group consisting of a triazole compound and a tetrazole compound.
  • triazole compound examples include benzotriazole, benzotriazole-1-acetonitrile, benzotriazole-5-carboxylic acid, benzotriazole-1-methanol, carboxybenzotriazole, 3-mercaptotriazole, 5-mercaptotriazole; Substitutes and the like.
  • the triazole compound may be benzotriazole or 3-mercaptotriazole.
  • tetrazole compound examples include 5-methyltetrazole, 5-aminotetrazole, 1-methyl-5-amino-tetrazole, 1-methyl-5-mercapto-1H-tetrazole, 1-carboxymethyl-5-amino-tetrazole and the like. Is mentioned.
  • the tetrazole compound may be 5-methyltetrazole or 5-aminotetrazole.
  • the content of the component (D) may be 0.01 to 2 parts by mass based on 100 parts by mass of the total mass of the components (A), (B) and (C). When the content of the component (D) is in such a range, the content tends to be more excellent in terms of adhesive strength.
  • the content of the component (D) may be 0.03 parts by mass or more, 0.05 parts by mass or more, 0.1 parts by mass or more, or 0.3 parts by mass or more.
  • the content of the component (D) may be 2 parts by mass or less, 1.8 parts by mass or less, 1.5 parts by mass or less, or 1.2 parts by mass or less.
  • the film adhesive may further contain (E) an inorganic filler, (F) a coupling agent, (G) a curing accelerator, and the like.
  • Component (E) Inorganic filler
  • the component (E) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, and nitride.
  • the component (E) may be silica from the viewpoint of adjusting the melt viscosity.
  • the average particle size of the component (E) may be 1 ⁇ m or less.
  • the average particle size of the component (E) is from 0.01 to 1 ⁇ m, 0.01 to 0.8 ⁇ m, 0.03 to 0.5 ⁇ m, 0.03 to 0.3 ⁇ m, or 0.03 to 1 ⁇ m from the viewpoint of fluidity. It may be up to 0.1 ⁇ m.
  • the average particle size means a value obtained by converting from the BET specific surface area. As the average particle size of the component (E) becomes smaller, it becomes possible to more sufficiently suppress the permeation of copper ions in the adhesive.
  • the shape of the component (E) is not particularly limited, but may be spherical.
  • the content of the component (E) is 0.1 to 50 parts by mass, 0.1 to 30 parts by mass, based on 100 parts by mass of the total mass of the components (A), (B), and (C). Alternatively, it may be 0.1 to 20 parts by mass.
  • Component (F) Coupling Agent
  • the component (F) may be a silane coupling agent.
  • the silane coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) aminopropyltrimethoxysilane. Can be These may be used alone or in combination of two or more.
  • Component (G) Curing accelerator
  • the component (G) is not particularly limited, and a commonly used component can be used.
  • Examples of the component (G) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. Among them, the component (G) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used alone or in combination of two or more.
  • the film adhesive may further contain other components.
  • Other components include, for example, pigments, ion scavengers, antioxidants, and the like.
  • the content of the component (F), the component (G), and other components is 0 to 30 parts by mass based on 100 parts by mass of the total mass of the components (A), (B), and (C). May be.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of a film adhesive.
  • the film adhesive 1 (adhesive film) shown in FIG. 1 is obtained by molding an adhesive composition into a film.
  • the film adhesive 1 may be in a semi-cured (B stage) state.
  • Such a film adhesive 1 can be formed by applying an adhesive composition to a support film.
  • a varnish of the adhesive composition adheresive varnish
  • the component (A), the component (B), the component (C), the component (D), and other components added as necessary may be added to a solvent.
  • a mixed solution is mixed or kneaded to prepare an adhesive varnish, the adhesive varnish is applied to a support film, and the solvent is removed by heating and drying to form the film adhesive 1. .
  • the support film is not particularly limited as long as it can withstand the above-mentioned heating and drying, for example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, a polymethylpentene film, and the like. It may be.
  • the support film may be a multilayer film in which two or more kinds are combined, or may be one whose surface is treated with a release agent such as a silicone-based or silica-based release agent.
  • the thickness of the support film may be, for example, 10-200 ⁇ m or 20-170 ⁇ m.
  • Mixing or kneading can be performed by using an ordinary stirrer, a mill, a three-roller, a disperser such as a ball mill, or the like, and appropriately combining these.
  • the solvent used for the preparation of the adhesive varnish is not limited as long as each component can be uniformly dissolved, kneaded or dispersed, and conventionally known solvents can be used.
  • a solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, xylene, and the like.
  • the solvent may be methyl ethyl ketone, cyclohexanone, etc. in terms of drying speed and cost.
  • a known method can be used, and examples thereof include a knife coat method, a roll coat method, a spray coat method, a gravure coat method, a bar coat method, and a curtain coat method.
  • a known method can be used, and examples thereof include a knife coat method, a roll coat method, a spray coat method, a gravure coat method, a bar coat method, and a curtain coat method.
  • the heating and drying conditions are not particularly limited as long as the used solvent is sufficiently volatilized, but the heating and drying can be performed by heating at 50 to 150 ° C. for 1 to 30 minutes.
  • the thickness of the film-like adhesive is 50 ⁇ m or less, the distance between the semiconductor element and the supporting member on which the semiconductor element is mounted becomes short, so that problems due to copper ions tend to occur easily. Since the film-like adhesive according to the present embodiment can sufficiently suppress the permeation of copper ions in the adhesive, the thickness can be reduced to 50 ⁇ m or less.
  • the thickness of the film adhesive 1 may be 40 ⁇ m or less, 30 ⁇ m or less, 20 ⁇ m or less, or 15 ⁇ m or less.
  • the lower limit of the thickness of the film adhesive 1 is not particularly limited, but may be, for example, 1 ⁇ m or more.
  • the copper ion transmission time of the film adhesive 1 in the semi-cured (B stage) state may be more than 80 minutes, and is 85 minutes or more, 90 minutes or more, 100 minutes or more, 150 minutes or more, 200 minutes or more, or 250 minutes. Minutes or more.
  • the copper ion transmission time is longer than 80 minutes, it is predicted that even if a defect such as insufficient curing occurs during the fabrication of a semiconductor device, a defect caused by the copper ion hardly occurs.
  • the copper ion transmission time of the film adhesive 1 (that is, the cured product of the film adhesive) in the completely cured (C stage) state may be more than 100 minutes, and is 120 minutes or more, 140 minutes or more, 160 minutes or more. , 180 minutes or more, 200 minutes or more, or 250 minutes or more. Problems due to copper ions tend to occur during high-temperature treatment such as a reflow process. For this reason, it is expected that a defect caused by copper ions is less likely to occur when the completely cured (C stage) state is longer than 100 minutes.
  • FIG. 2 is a schematic sectional view showing an embodiment of the adhesive sheet.
  • the adhesive sheet 100 shown in FIG. 2 includes a base material 2 and a film adhesive 1 provided on the base material 2.
  • FIG. 3 is a schematic sectional view showing another embodiment of the adhesive sheet.
  • the adhesive sheet 110 shown in FIG. 3 includes a base material 2, a film adhesive 1 provided on the base material 2, and a cover film provided on a surface of the film adhesive 1 opposite to the base material 2. 3 is provided.
  • the substrate 2 is not particularly limited, but may be a substrate film.
  • the base film may be the same as the above-mentioned support film.
  • the cover film 3 is used to prevent the film adhesive from being damaged or contaminated, and may be, for example, a polyethylene film, a polypropylene film, or a surface release agent-treated film.
  • the thickness of the cover film 3 may be, for example, 15 to 200 ⁇ m or 70 to 170 ⁇ m.
  • the adhesive sheets 100 and 110 can be formed by applying an adhesive composition to a base film in the same manner as in the method for forming a film adhesive described above.
  • the method for applying the adhesive composition to the substrate 2 may be the same as the method for applying the adhesive composition to the support film described above.
  • the adhesive sheet 110 can be obtained by further laminating the cover film 3 on the film adhesive 1.
  • the adhesive sheets 100 and 110 may be formed by using a film adhesive prepared in advance.
  • the adhesive sheet 100 can be formed by laminating under a predetermined condition (for example, room temperature (20 ° C.) or a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be manufactured continuously and is excellent in efficiency, it may be formed using a roll laminator in a heated state.
  • the adhesive sheet is a dicing / die bonding integrated adhesive sheet in which the base material 2 is a dicing tape.
  • the laminating step for the semiconductor wafer is performed only once, so that the work efficiency can be improved.
  • the dicing tape examples include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film.
  • the dicing tape may have been subjected to a surface treatment such as a primer application, a UV treatment, a corona discharge treatment, a polishing treatment, an etching treatment and the like, as necessary.
  • the dicing tape may have adhesiveness.
  • Such a dicing tape may be one in which the above-mentioned plastic film is provided with adhesiveness, or one in which an adhesive layer is provided on one surface of the above-mentioned plastic film.
  • the pressure-sensitive adhesive layer may be either a pressure-sensitive type or a radiation-curable type, and has a sufficient adhesive strength so that the semiconductor element does not scatter during dicing, and does not damage the semiconductor element in the subsequent semiconductor element pickup step.
  • a pressure-sensitive type or a radiation-curable type
  • the thickness of the dicing tape may be 60 to 150 ⁇ m or 70 to 130 ⁇ m from the viewpoints of economy and handling of the film.
  • FIG. 4 is a schematic sectional view showing another embodiment of the adhesive sheet.
  • FIG. 5 is a schematic sectional view showing another embodiment of the adhesive sheet.
  • the adhesive sheet 120 shown in FIG. 4 includes the dicing tape 7, the adhesive layer 6, and the film adhesive 1 in this order.
  • the adhesive sheet 130 shown in FIG. 5 includes the dicing tape 7 and the film adhesive 1 provided on the dicing tape 7.
  • the adhesive sheet 120 can be obtained, for example, by providing the adhesive layer 6 on the dicing tape 7 and further laminating the film adhesive 1 on the adhesive layer 6.
  • the adhesive sheet 130 can be obtained, for example, by laminating the dicing tape 7 and the film adhesive 1.
  • the film adhesive and the adhesive sheet may be used in the manufacture of a semiconductor device.
  • the film adhesive and the dicing tape may be applied to a semiconductor wafer or a semiconductor element (semiconductor chip) that has already been cut into pieces at a temperature of 0 ° C. or less.
  • a semiconductor element with a film adhesive is obtained by cutting with a rotary blade, laser or stretching, and then the semiconductor element with a film adhesive is used as an organic substrate, a lead frame, or another semiconductor element. It may be used for manufacturing a semiconductor device including a step of bonding on top.
  • Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.
  • Film adhesives and adhesive sheets include semiconductor elements such as ICs and LSIs, lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resins and epoxy resins; A resin impregnated and cured with an epoxy resin or the like; can be used as a die bonding adhesive for bonding a semiconductor mounting support member such as ceramics such as alumina.
  • the film adhesive and the adhesive sheet are also suitably used as an adhesive for bonding the semiconductor elements to each other in a Stacked-PKG having a structure in which a plurality of semiconductor elements are stacked.
  • one of the semiconductor elements serves as a support member on which the semiconductor element is mounted.
  • the film adhesive and the adhesive sheet are, for example, a protective sheet for protecting the back surface of the semiconductor element of the flip-chip type semiconductor device, and for sealing between the surface of the semiconductor element of the flip-chip type semiconductor device and the adherend. It can also be used as a sealing sheet or the like.
  • a semiconductor device manufactured using a film adhesive will be specifically described with reference to the drawings.
  • semiconductor devices having various structures have been proposed, and the application of the film adhesive according to the present embodiment is not limited to the semiconductor devices having the structures described below.
  • FIG. 6 is a schematic sectional view showing one embodiment of a semiconductor device.
  • the semiconductor device 200 shown in FIG. 6 includes a semiconductor element 9, a support member 10 on which the semiconductor element 9 is mounted, and an adhesive member provided between the semiconductor element 9 and the support member 10 to adhere the semiconductor element 9 and the support member 10. (Cured film adhesive 1c).
  • a connection terminal (not shown) of the semiconductor element 9 is electrically connected to an external connection terminal (not shown) via a wire 11 and is sealed by a sealing material 12.
  • FIG. 7 is a schematic sectional view showing another embodiment of the semiconductor device.
  • the first-stage semiconductor element 9a is bonded to the support member 10 on which the terminals 13 are formed by an adhesive member (cured product 1c of a film-like adhesive).
  • the semiconductor element 9b in the second stage is further adhered thereon by an adhesive member (cured product 1c of a film adhesive).
  • the connection terminals (not shown) of the first-stage semiconductor element 9a and the second-stage semiconductor element 9b are electrically connected to external connection terminals via wires 11, and are sealed with a sealing material 12.
  • the film adhesive according to the present embodiment can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.
  • the semiconductor device (semiconductor package) shown in FIGS. 6 and 7 includes, for example, a film-like adhesive interposed between a semiconductor element and a support member or between a semiconductor element and a semiconductor element, and heat-pressing them to form a semiconductor device. And then, if necessary, a wire bonding step, a sealing step with a sealing material, a heating and melting step including reflow with solder, and the like.
  • the heating temperature in the thermocompression bonding step is usually 20 to 250 ° C.
  • the load is usually 0.1 to 200 N
  • the heating time is usually 0.1 to 300 seconds.
  • the support member or It may be a method of attaching to a semiconductor element.
  • the support member may include a member made of copper.
  • a member made of copper is used as a constituent member of the semiconductor device. Even so, the effect of copper ions generated from the member can be reduced, and the occurrence of electrical trouble due to copper ions can be sufficiently suppressed.
  • the member made of copper for example, a lead frame, a wiring, a wire, a heat radiating material, and the like can be mentioned.
  • the influence of copper ions can be reduced. It is.
  • the method for manufacturing a semiconductor device using the dicing / die bonding integrated adhesive sheet shown in FIG. 4 is not limited to the method for manufacturing a semiconductor device described below.
  • a semiconductor wafer is pressure-bonded to the film-like adhesive 1 in the adhesive sheet 120 (integrated dicing / die-bonding adhesive sheet), and the semiconductor wafer is adhered and held and fixed (mounting step).
  • This step may be performed while pressing with a pressing means such as a pressure roll.
  • dicing of the semiconductor wafer is performed.
  • the semiconductor wafer is cut into a predetermined size, and a plurality of individualized semiconductor elements (semiconductor chips) with a film adhesive are manufactured.
  • Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method.
  • a cutting method called full cut in which a dicing tape is cut, a method in which a semiconductor wafer is cut in half by cutting it in half and cooled and pulled, and a cutting method using a laser can be adopted.
  • the dicing apparatus used in this step is not particularly limited, and a conventionally known dicing apparatus can be used.
  • the semiconductor element is picked up.
  • the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method in which individual semiconductor elements are pushed up from the dicing / die-bonding integrated adhesive sheet side by a needle, and the pushed up semiconductor elements are picked up by a pickup device.
  • the pickup is performed after irradiating the pressure-sensitive adhesive layer with the radiation.
  • the adhesive force of the pressure-sensitive adhesive layer to the film-like adhesive is reduced, and the peeling of the semiconductor element is facilitated.
  • pickup can be performed without damaging the semiconductor element.
  • the semiconductor element with a film-like adhesive formed by dicing is bonded to a support member for mounting the semiconductor element via the film-like adhesive.
  • the bonding may be performed by crimping.
  • the conditions for die bonding are not particularly limited, and can be set as appropriate as needed. Specifically, for example, the bonding can be performed at a die bonding temperature of 80 to 160 ° C., a bonding load of 5 to 15 N, and a bonding time of 1 to 10 seconds.
  • a step of thermally curing the film adhesive may be provided.
  • thermally curing the film adhesive bonding the support member and the semiconductor element by the bonding step it is possible to bond and fix more firmly.
  • pressure may be applied at the same time to perform curing.
  • the heating temperature in this step can be appropriately changed depending on the components of the film adhesive.
  • the heating temperature may be, for example, 60 to 200 ° C.
  • the temperature or the pressure may be changed stepwise.
  • a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the support member and the electrode pad on the semiconductor element with a bonding wire is performed.
  • the bonding wire for example, a gold wire, an aluminum wire, a copper wire or the like is used.
  • the temperature at which wire bonding is performed may be in the range of 80 to 250 ° C or 80 to 220 ° C.
  • the heating time may be from a few seconds to a few minutes.
  • the connection may be performed by using the vibration energy by the ultrasonic wave and the compression energy by the applied pressure in a state of being heated within the above temperature range.
  • a sealing step of sealing the semiconductor element with a sealing resin is performed.
  • This step is performed to protect the semiconductor element or the bonding wire mounted on the support member.
  • This step is performed by molding a sealing resin with a mold.
  • the sealing resin for example, an epoxy resin may be used. The substrate and the residue are buried by heat and pressure at the time of sealing, so that separation at the bonding interface due to bubbles can be prevented.
  • the sealing resin that is insufficiently cured in the sealing step is completely cured. Even when the film adhesive is not thermally cured in the sealing step, the film adhesive is thermally cured together with the curing of the sealing resin in the present step, so that the adhesive can be fixed.
  • the heating temperature in this step can be appropriately set depending on the type of the sealing resin, and may be, for example, in the range of 165 to 185 ° C., and the heating time may be about 0.5 to 8 hours.
  • the semiconductor element with the film adhesive bonded to the support member is heated using a reflow furnace.
  • a resin-sealed semiconductor device may be surface-mounted on the support member.
  • a method of surface mounting for example, reflow soldering in which solder is supplied to a printed wiring board in advance and then heated and melted by warm air or the like and soldered is used.
  • the heating method include hot air reflow and infrared reflow.
  • the heating method may be a method of heating the whole or a method of heating a local part.
  • the heating temperature may be, for example, in the range of 240-280 ° C.
  • Curing agent (B1) HE-100C-30 (trade name, manufactured by Air Water Co., Ltd., phenylaralkyl-type phenol resin, hydroxyl equivalent: 174 g / eq, softening point 77 ° C.)
  • the highest absorbance peak was a peak point between the two points between 1670 cm -1 and 1860 cm -1. 1670cm and -1 and a linear baseline between the two points between 1860 cm -1, and a baseline point that it is the same wave number and the peak point on the base line, the difference in absorbance of the baseline point and the peak point.
  • the height (P CO ) of the absorption peak derived from the stretching vibration of the carbonyl group was used.
  • E Inorganic filler (E1) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 ⁇ m) (E2) YA050C-HHG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.05 ⁇ m)
  • G Curing accelerator (G1) 2PZ-CN (trade name, 1-cyanoethyl-2-phenylimidazole manufactured by Shikoku Chemicals Co., Ltd.)
  • ⁇ Preparation of film adhesive> The produced adhesive varnish was filtered through a 100-mesh filter, and degassed under vacuum.
  • the applied adhesive varnish was dried by heating at 90 ° C. for 5 minutes, and then at 130 ° C. for 5 minutes in two stages, to obtain Comparative Examples 1-1 and 1-2 and Examples 1-1 and 1 in the B-stage state. -2 and Comparative Examples 2-1 and 2-2 and Examples 2-1 to 2-7 were obtained.
  • the thickness of the film adhesive was adjusted to 10 ⁇ m depending on the amount of the adhesive varnish applied.
  • NMP N-methyl-2-pyrrolidone
  • Comparative Example 1-1 and Examples 1-1 and 1-2 and Comparative Example 2-1 and Examples 2-1 to 2-7 in the B-stage state are further heated at 170 ° C. for one hour. After drying, film adhesives of Comparative Example 1-1 and Examples 1-1 and 1-2 and Comparative Example 2-1 and Examples 2-1 to 2-7 in a C-stage state were produced.
  • the obtained dicing sample was cut using a full-auto dicer DFD-6361 (manufactured by Disco Corporation).
  • the cutting was performed by a step cutting method using two blades, and dicing blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by Disco Corporation) were used.
  • the cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm / sec, and a chip size of 7.5 mm ⁇ 7.5 mm.
  • the cutting was performed in the first stage so that the semiconductor wafer remained about 30 ⁇ m, and then in the second stage so that the dicing tape had a cut of about 20 ⁇ m.
  • the semiconductor chip obtained by the cutting was thermocompression-bonded on a solder resist (Taiyo Holdings Co., Ltd., trade name: AUS-308).
  • the pressure bonding conditions were a temperature of 120 ° C., a time of 1 second, and a pressure of 0.1 MPa.
  • the sample obtained by crimping was placed in a dryer and cured at 170 ° C. for 1 hour.
  • the semiconductor chip press-bonded to the solder resist is cured, and the semiconductor chip and the solder resist are hardened and die-shared by pulling the semiconductor chip with a universal bond tester (trade name: Series 4000, manufactured by Nordson Advance Technology Co., Ltd.).
  • the strength was measured and evaluated as the adhesive strength.
  • the measurement condition was a stage temperature of 250 ° C. The results are shown in Tables 5 and 6.
  • the film adhesive having an acrylic rubber satisfying the requirement of the formula (1) has a higher copper ion content than the film adhesive having an acrylic rubber not satisfying the requirement of the formula (1).
  • the transmission time was long (comparison of Comparative Example 1-2 and Examples 1-1 and 1-2 with Comparative Example 1-1 and comparison with Comparative Example 2-2 and Examples 2-1 to 2-7) Comparison with Example 2-2). This is presumed to be due to the fact that the use of an acrylic rubber having a small (or no) nitrile group having a high complex stability constant with copper ions weakened the ability of the film adhesive to take in copper ions. Also, from the comparison between Example 1-1 and Example 2-1 and the comparison between Example 1-2 and Example 2-2, the smaller the average particle diameter of the inorganic filler, the smaller the copper ion transmission time. It turns out that it tends to be longer.
  • the film adhesive containing various heterocyclic compounds had further improved adhesive strength as compared with the film adhesive containing no heterocyclic compound (Comparative Example 1). -2 and Examples 1-1 and 1-2, and Comparative Example 2-2 and Examples 2-1 to 2-7).
  • the film adhesive of the present invention was able to sufficiently suppress the permeation of copper ions in the adhesive, and was also excellent in adhesive strength.
  • SYMBOLS 1 Film adhesive, 2 ... Base material, 3 ... Cover film, 6 ... Adhesive layer, 7 ... Dicing tape, 9, 9a, 9b ... Semiconductor element, 10 ... Support member, 11 ... Wire, 12 ... Sealing Material, 13 terminals, 100, 110, 120, 130 adhesive sheet, 200, 210 semiconductor device.

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PCT/JP2019/037648 2018-09-26 2019-09-25 フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法 WO2020067186A1 (ja)

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SG11202102895VA SG11202102895VA (en) 2018-09-26 2019-09-25 Film-shaped adhesive, adhesive sheet, semiconductor device, and production method for semiconductor device
JP2020549304A JP7435458B2 (ja) 2018-09-26 2019-09-25 フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法
CN201980062235.4A CN112740380A (zh) 2018-09-26 2019-09-25 膜状黏合剂、黏合片以及半导体装置及其制造方法

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