WO2020064505A1 - Procédé de production de bandes métalliques hautement orientées - Google Patents
Procédé de production de bandes métalliques hautement orientées Download PDFInfo
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- WO2020064505A1 WO2020064505A1 PCT/EP2019/075189 EP2019075189W WO2020064505A1 WO 2020064505 A1 WO2020064505 A1 WO 2020064505A1 EP 2019075189 W EP2019075189 W EP 2019075189W WO 2020064505 A1 WO2020064505 A1 WO 2020064505A1
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- Prior art keywords
- metal tape
- metal
- tape
- process according
- layer
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 83
- 239000002184 metal Substances 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000002887 superconductor Substances 0.000 claims abstract description 25
- 230000009467 reduction Effects 0.000 claims abstract description 23
- 238000002844 melting Methods 0.000 claims abstract description 14
- 230000008018 melting Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 238000005097 cold rolling Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 238000006722 reduction reaction Methods 0.000 description 19
- 239000003381 stabilizer Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 238000000224 chemical solution deposition Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000005291 magnetic effect Effects 0.000 description 7
- 229910000990 Ni alloy Inorganic materials 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- 238000007669 thermal treatment Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001887 electron backscatter diffraction Methods 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- -1 TbOx Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229940059947 gadolinium Drugs 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000007735 ion beam assisted deposition Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VPSXHKGJZJCWLV-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(1-ethylpiperidin-4-yl)oxypyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)OC1CCN(CC1)CC VPSXHKGJZJCWLV-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018131 Al-Mn Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018461 Al—Mn Inorganic materials 0.000 description 1
- 229910018566 Al—Si—Mg Inorganic materials 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910005535 GaOx Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910003296 Ni-Mo Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910021526 gadolinium-doped ceria Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000013531 gin Nutrition 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005088 metallography Methods 0.000 description 1
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 230000002311 subsequent effect Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
Definitions
- the present invention is in the field of oriented metal substrates for high temperature supercon- ductor tapes.
- High-temperature superconductors in tape form are typically produced by epitaxial deposition on flexible metal substrates.
- substrates are made of nickel due to its high ten- dency to form a highly oriented cubic texture.
- high temperature and tensile stress is exerted on the sub- strate.
- Pristine nickel is mechanically too weak. Therefore, nickel alloys are used, for example nickel alloys containing tungsten.
- WO 2008 / 125 091 discloses alloys which are suitable for these purposes.
- Nickel containing about 5 at-% tungsten can be very well processed into tapes with high crystal orientation, for ex- ample as disclosed in WO 03 / 024 637 A1.
- this alloy is magnetic, so it cannot be used in applications with high alternating magnetic fields, such as electric generators or en- gines. Higher tungsten contents render non-magnetic tapes.
- the more tungsten is added to the nickel the lower is the tendency to form highly oriented crystals. This is a conse- quence of the decreased stacking fault energy of the alloy.
- J. Eickemeyer et al. disclose in Superconductor Science and Technology volume 23 (2010), 085012 a process to produce Ni-9.0 at. % W substrate with high texture. Also U. Gaitzsch et al. disclose in Superconductor Science and Technology volume 26 (2013), 085024 such a process. However, the initial deformation process is not disclosed making reproduction difficult as de- scribed by F. Peng et al. in Rare Metals volume 37 (2016) page 662.
- the present invention further relates to a metal tape containing Ni and at least 8 at-% W having a cube texture component of at least 99 %.
- the present invention further relates to the use of the metal tape according to the present inven- tion as a substrate for a high temperature superconductor.
- the present invention further relates to a superconducting tape containing the substrate accord- ing to the present invention.
- the process according to the present invention is suitable for preparing metal tapes with a high degree of cube texture.
- the metal tape can contain any face centered cubic (fee) metal which forms a cube texture including nickel alloys, for example Ni-W, Ni-Mo, Ni-Cr, Ni-Re; aluminum alloys, for example Al-Mg, Al-Si-Mg, Al-Mn; copper alloys, for example Cu-Mn, Cu-Ni, Cu-Zn; iron alloys, for example Fe-Ni.
- the metal tape contains nickel, more preferably the metal tape contains nickel and tungsten. The process yields good results for most compositions of nickel and tungsten.
- the degree of cube texture in a rectangular object generally means that the percentage of grains with a deviation of their crystallographic axes from the principal axes of the rectangular object is equal or less than 16 °.
- the degree of cube texture is at least 97 %, more preferably at least 99 %, in particular at least 99.5 %.
- the process according to the present invention starts with the metal alloy, for example in form of a metal sheet which is obtained by hot deformation of an ingot which is formed from cooling down a melt of the metal alloy. It is generally known how melting and hot deformation are done, for example as disclosed in WO 2014 / 194 881 A2. After hot deformation the metal sheet often has a thickness of several millimeters, for example 5 to 20 mm.
- the process according to the present invention comprises in step (a) reducing the thickness of the metal tape.
- the thickness reduction is accomplished by rolling.
- the tem- perature increases during thickness reduction as a result of the mechanical energy input. How- ever, it should not exceed 40 % of the melting temperature of the metal tape in Kelvin, prefera- bly it should not exceed 30 % of the melting temperature of the metal tape in Kelvin, in particular it should not exceed 25 % of the melting temperature of the metal tape in Kelvin. Therefore, preferably, the metal tape is not heated in addition to this mechanical energy input, or even cooled in order to remove some of the heat resulting from the mechanical input in order to not exceed the maximum temperature.
- the speed of thickness reduction needs to be adjusted in order to avoid excessive heating during thickness reduction.
- the temperature of the metal tape during thickness reduc- tion is below 500 °C, more preferably below 300 °C, in particular below 175 °C. Usually, the temperature not below 0 °C.
- the thickness of the metal tape is reduced by cold roll- ing.
- the process according to the present invention comprises in step (b) heating the metal tape to a temperature above 40 % of its melting point in Kelvin.
- the metal tape should not be heated above its melting point.
- the temperature is 42 % to 60 % of its melting point in Kelvin, in particular 45 % to 55 % of its melting point in Kelvin.
- the temperature of heating the metal tape is preferably 550 °C to 725 °C, more preferably 550 °C to 620 °C, in particular 570 °C to 610 °C.
- the temperature of heating the metal tape is preferably 600 °C to 900 °C, in partic- ular 610 °C to 725 °C.
- the heating is done in a reducing atmosphere, i.e. an atmos- phere with low oxygen content, for example in forming gas, i.e. a mixture of 95 vol-% nitrogen and 5 vol-% hydrogen.
- a reducing atmosphere usually avoids oxidation of the major elements of the metal alloy tape as well as majority of impurity elements in the metal alloy tape.
- the heating is done in an atmosphere with low humidity, in particular in an atmosphere with a dew point below -40 °C.
- heating the metal tape to these relatively low temperatures allows to partly revert rotation around the longitudinal direction of the metal tape, such as the rolling direction, in the regions of cube nuclei without noticeable recov- ery of dislocations in grains of other orientation and increases the degree of cube texture for relatively long heating times, in particular, for materials with small nc B in the state right after thickness reduction of the metal tape.
- the heating can be done for a time period of 1 to 10 h, preferably 2 to 8 h, in particular 3 to 5 h.
- the number density of cube-oriented grains nc B after thickness reduction is at least 10 12 nr 3 , preferably at least 10 13 nr 3 , more preferably at least 5 10 13 nr 3 , in particular at least 10 14 nr 3 .
- the volume fraction of cube texture decreases as a consequence of mechanical deformation.
- the cube-oriented grains grow back in expense of non- recrystallized grains of different orientation.
- nc B continuously decreases with increasing deformation during the thickness reduction of the metal tape.
- the thickness reduction in step (a) is less than or equal to 80 %, more preferably less than 70 %, even more preferably less than 60 %, in particular less than 50 %.
- the thickness reduction value indicates the difference in thick- ness before and after reduction divided by the thickness before reduction. Consequently, the lower the stacking fault energy of the material is, the more often the sequence comprising steps
- the thickness reduction is lowered each time step (a) is performed, preferably, the thickness reduction of the last time step (a) is performed is less than 40 %, more preferably less than 35 %, in particular less than 30 %.
- step (b) when it is performed for the last time depends on the density of cube-oriented grains and the degree of overall deformation. Often it is at least 15 h, more preferably at least 20 h, in particular at least 25 h. In most cases, it is sufficient that the final step (b) is performed for 60 h. If steps (a) and (b) are performed more than once, the total thickness reduction of the metal tape is often more than 80 %, preferably more than 90 %, more preferably at least 95 %, in particular at least 97 %.
- the metal tape is heated to a temper- ature of at least 800 °C, more preferably at least 900 °C, in particular 1000 °C, for example 1050 to 1090 °C.
- the temperature should be below the melting point of the material. This heating is usually done for a short period of time, preferably for 5 min to 2 h, more preferably 10 min to 1 h, in particular 20 to 40 min, such as 30 min.
- the metal tapes obtained in the process according to the present invention are typically 20 to 200 pm thick, preferably 30 to 100 pm.
- the length is typically 1 to 1000 m, for example 100 m, the width is typically 0.4 cm to 1 m.
- the ratio of length to width is typically at least 100, prefera- bly at least 200, in particular at least 500.
- the metal tapes are well suited for the use as a substrate for a high temperature superconduc- tor, in particular for high temperature superconductor tapes.
- a high temperature superconduc- tor in particular for high temperature superconductor tapes.
- such a tape contains a substrate, a buffer, a high-temperature superconductor layer and a stabilizer layer.
- the substrate has a surface of low roughness.
- surface is preferably planarized, for example by electropolishing.
- a thermal treatment includes heating the sub- strate to 600 to 1000 °C for 2 to 15 minutes, wherein the time refers to the time during which the substrate is at the maximum temperature.
- the thermal treatment is done under re- ducing atmosphere such as a hydrogen-containing atmosphere. The planarization and/or ther- mal treatment may be repeated.
- the surface of the substrate has a roughness with rms according to DIN EN ISO 4287 and 4288 of less than 15 nm.
- the roughness refers to an area of 10 x 10 pm within the boundaries of a crystallite grain of the substrate surface, so that the grain boundaries of the metal substrate do not influence the specified roughness measurement.
- the metal tapes according to the present invention are particularly suitable for the use as sub- strate in superconducting tapes. Therefore, the present invention further relates to the use of the metal tape according to the present invention as a substrate for a high temperature super- conductor and to a superconducting tape containing the substrate according to the present in- vention.
- the superconducting tape according to the present invention often further comprises a buffer layer.
- the buffer layer can contain any material capable of supporting the superconductor layer.
- buffer layer materials include metals and metal oxides, such as silver, nickel, TbO x , GaO x , Ce0 2 , yttria-stabilized zirconia (YSZ), Y2O3, LaAIOs, SrTiC>3, Gd 2 03, LaNiOs, LaCuOs, SrRuOs, NdGaOs, NdAIOs and/or some nitrides as known to those skilled in the art.
- metals and metal oxides such as silver, nickel, TbO x , GaO x , Ce0 2 , yttria-stabilized zirconia (YSZ), Y2O3, LaAIOs, SrTiC>3, Gd 2 03, LaNiOs, LaCuOs, SrRuOs, NdGaO
- Preferred buffer layer materials are yttrium-stabilized zirconium oxide (YSZ); zirconates, such as gadolin- ium zirconate, lanthanum zirconate; titanates, such as strontium titanate; and simple oxides, such as cerium oxide, or magnesium oxide. More preferably the buffer layer contains lanthanum zirconate, cerium oxide, yttrium oxide, magnesium oxide, strontium titanate and/or rare-earth- metal-doped cerium oxide such as gadolinium-doped cerium oxide. Even more preferably the buffer layer contains lanthanum zirconate and/or cerium oxide.
- the surface of the buffer layer is preferably textured. The lattice parameters of the textured part of the buffer layer resemble the lattice parameters of the superconductor layer showing only a small mismatch to the lattice con- stant.
- the super- conducting tape preferably contains more than one buffer layer on top of each other.
- the superconducting tape comprises two or three buffer layers, for example a first buffer layer comprising lanthanum zirconate and a second buffer layer containing cerium oxide.
- the buffer layer preferably covers the whole surface of the substrate on one side, which means at least 95 % of the surface, more preferably at least 99 % of the surface.
- the buffer layer typi- cally has a thickness of 5 to 500 nm, for example 10 to 30 nm or 150 to 300 nm.
- the buffer layer can be made in various ways including physical deposition, such as ion beam assisted deposition (IBAD) or laser deposition, or by chemical solution deposition. If the buffer layer is made by chemical solution deposition, the buffer layer is often made in several steps such that it contains several individual layers of the same chemical composition, for example three layers of each 100 nm. Such a process is for example described in
- the buffer layer preferably has a low surface roughness, for example a rms according to DIN EN ISO 4287 and 4288 of less than 50 nm or even less than 30 nm.
- the superconducting tape according to the present invention further comprises a superconduc- tor layer.
- the superconductor layer contains a compound of the formula
- RE stands for one or more than one rare earth metal, preferably yttrium, dys- prosium, holmium, erbium, gadolinium, europium, samarium, neodymium, praseodymium, or lanthanum, in particular yttrium.
- the index x assumes a value of 0.9 to 1.8, preferably 1.2 to 1.5.
- the index y assumes a value of 1.4 to 2.2, preferably 1.5 to 1.9.
- the index d assumes a value of 0.1 to 1.0, preferably 0.2 to 0.5.
- the superconductor layer preferably has a thickness of 200 nm to 5 pm, more preferably 400 nm to 3.5 pm, for example 1 to 2 pm.
- the superconductor layer has crystal grains with a high degree of orientation to each other. If the superconductor layer is made by chemical solution deposition, it is often made in several steps such that it con- tains several individual layers of the same chemical composition, for example three layers of each 100 nm. Such a process is for example described in WO 2016 / 150 781 A1.
- the superconductor layer preferably further contains non-conductive particles which act as pin- ning centers and can minimize the critical current density loss upon application of magnetic fields.
- Typical pinning centers contain Zr0 2 , stabilized Zr0 2 , Hf0 2 , BaZrOs, l_n 2 Zr 2 07, Ce0 2 , Ba- Ce0 3 , Y 2 0 3 or RE 2 0 3 , in which RE stand for one or more rare earth metals.
- the parti- cles have an average diameter of 1 to 100 nm, preferably 2 to 20 nm.
- the superconducting layer preferably has a low surface roughness, for example an rms accord- ing to DIN EN ISO 4287 and 4288 of less than 100 nm or even less than 50 nm.
- the supercon- ducting layer typically has a resistance close to zero at low temperatures, preferably up to a temperature of at least 77 K.
- the superconductor layer has a critical current density without externally applied magnetic field of at least 1 10 6 A/cm 2 , more preferably at least 1.5 - 10 6 A/cm 2 .
- the critical current density decreases by less than 30 % if a mag- netic field of 0.1 T is applied perpendicular to the surface of the superconductor layer, more preferably it decreases by less than 20 %.
- the critical current density decreases by less than 15 % if a magnetic field of 0.1 T is applied parallel to the surface of the superconduc- tor layer, more preferably it decreases by less than 10 %.
- the superconducting layer can be made in various ways, including physical vapor deposition methods such as pulsed laser deposition (PLD), sputtering or coevaporation; or chemical solu- tion deposition (CSD).
- PLD pulsed laser deposition
- CSD chemical solu- tion deposition
- fluorine- containing precursors such as BaF 2 or Ba(TFA)2, wherein TFA stands for trifluoroacetate, are used in these processes.
- the superconducting layer often contains trace amounts of residual fluorine, for example 10 10 to 10 _5 at-%.
- the superconducting tape according to the present invention further comprises a sta- bilizer layer.
- the stabilizer layer typically has a low electrical resistance, preferably lower than 1 pQrn at room temperature, more preferably lower than 0.2 pQrn at room temperature, in particu- lar lower than 0.05 pQrn at room temperature.
- the stabilizer layer comprises a metal, preferably copper, silver, tin, zinc or an alloy containing one of these, in particular copper.
- the stabilizer layer contains at least 50 at-% copper, tin or zinc, more preferably at least 70 at-%, in particular at least 85 at-%.
- the stabilizer layer has a thickness of 0.1 to 50 pm, more preferably 0.5 to 20 pm, in particular 1 to 10 pm.
- the stabilizer layer can be made in various ways including physical vapor deposition, chemical solution deposition, sputtering, electrodeposition, or lamination. Electrodeposition is preferred which means that the stabilizer layer is preferably an electrodeposited layer, more preferably the stabilizer layer is an electrodeposited layer on a noble metal layer. Electrodeposition of a stabilizer layer is for example described in WO 2007 / 032 207 A1.
- the stabilizer layer can just overlie the superconducting layer.
- the stabilizer layer co- vers the whole circumference of the tape, i.e. it overlies the superconducting layer, the substrate and at least two of the side surfaces. It is possible that the stabilizer layer has a different thick ness on the different sides of the tape or the same. If the thickness is different, the thickness ranges above refer to the side with the highest thickness. In particular if the stabilizer layer is a galvanized layer, the so called“dog-bone” effect often leads to higher thicknesses at the edges compared to flat areas.
- the superconducting tape further contains a noble metal comprising layer in between the superconductor layer and the stabilizer layer.
- a noble metal comprising layer avoids the degradation of the su- perconductor layer when the stabilizer layer is deposited. It also increases the conductivity of the tape for the deposition of the stabilizer layer, which is particularly relevant if electrodeposi- tion is used.
- the noble metal comprising layer contains silver. A method of making a noble metal comprising layer on a superconducting layer is disclosed for example in WO 2008 / 000 485 A1.
- a 10 t Ni9W ingot produced by melting Ni and W in an industrial mold was homogenized by zone melting and annealing for about 60 h at 1 180°C. Then it was multiple time hot deformed by forging at about 900-1 100°C and then hot rolled into a sheet with a thickness of 6.0 ⁇ 0.3 mm.
- This metal sheet containing 8.8 ⁇ 0.1 at-% tungsten was subjected to repeated cold rolling and thermal treatment according to the following table.
- nc B (2.5 ⁇ 0.6) 10 14 rrr 3 .
- the degree of cube texture achieved in the metal tape was 99.5 ⁇ 0.5 %.
- the metal tape prepared as in Example 1 with the difference that the cold rolling was stopped at 0.074 mm thickness and the last heating step (b) at 605°C was done for 41 h. After subsequent annealing the metal tape at 1080 °C for 30 min, the degree of cube texture achieved in the metal tape was 95.8 ⁇ 0.7 %.
- the degree of cube texture achieved in the metal tape was 98.1 ⁇ 0.5 %.
- the degree of cube texture achieved in the metal tape was 91.8 ⁇ 0.7 %.
- the first step (b) which results in re- crystallization of 3 mm thick sheet without texture formation was done at 960°C, and subse- quent heating steps were done at 560°C and 600°C.
- the degree of cube texture achieved in the metal tape was 95.1 ⁇ 0.5 %.
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Abstract
La présente invention concerne le domaine des substrats métalliques orientés pour bandes supraconductrices à haute température. En particulier, la présente invention concerne un procédé de préparation de bandes métalliques avec un degré élevé de texture cubique comprenant (a) la réduction de l'épaisseur de la bande métallique et (b) le chauffage de la bande métallique à une température supérieure à 40 % de son point de fusion en Kelvin, le nombre volumique de grains orientés cube après réduction d'épaisseur étant d'au moins 1012 m-3.
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3982973A (en) * | 1975-12-11 | 1976-09-28 | The International Nickel Company, Inc. | Cube textured nickel |
WO2003024637A1 (fr) | 2001-08-30 | 2003-03-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Procede pour produire des bandes metalliques |
WO2006015819A1 (fr) | 2004-08-05 | 2006-02-16 | Trithor Gmbh | Procede de fabrication de supraconducteurs a haute temperature critique fortement textures et en forme de bandes |
WO2007032207A1 (fr) | 2005-09-16 | 2007-03-22 | Sumitomo Electric Industries, Ltd. | Procédé de production de fil supraconducteur et dispositif supraconducteur |
WO2008000485A1 (fr) | 2006-06-29 | 2008-01-03 | Zenergy Power Gmbh | procédé pour appliquer une couche métallique de recouvrement sur un supraconducteur à haute température |
WO2008125091A2 (fr) | 2007-04-17 | 2008-10-23 | Thyssenkrupp Vdm Gmbh | Feuille métallique |
WO2014194881A2 (fr) | 2013-06-07 | 2014-12-11 | VDM Metals GmbH | Procédé de production d'une feuille de métal |
CN105525146A (zh) * | 2016-01-17 | 2016-04-27 | 北京工业大学 | 一种提高YBCO超导体用Ni9.3W基带立方织构含量的方法 |
WO2016150781A1 (fr) | 2015-03-26 | 2016-09-29 | Basf Se | Procédé de production de fils supraconducteurs à haute température |
CN106077642A (zh) * | 2016-07-16 | 2016-11-09 | 北京工业大学 | 一种纳米合金粉末制备涂层导体用高钨合金基带坯锭的方法 |
-
2019
- 2019-09-19 WO PCT/EP2019/075189 patent/WO2020064505A1/fr active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3982973A (en) * | 1975-12-11 | 1976-09-28 | The International Nickel Company, Inc. | Cube textured nickel |
WO2003024637A1 (fr) | 2001-08-30 | 2003-03-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Procede pour produire des bandes metalliques |
WO2006015819A1 (fr) | 2004-08-05 | 2006-02-16 | Trithor Gmbh | Procede de fabrication de supraconducteurs a haute temperature critique fortement textures et en forme de bandes |
WO2007032207A1 (fr) | 2005-09-16 | 2007-03-22 | Sumitomo Electric Industries, Ltd. | Procédé de production de fil supraconducteur et dispositif supraconducteur |
WO2008000485A1 (fr) | 2006-06-29 | 2008-01-03 | Zenergy Power Gmbh | procédé pour appliquer une couche métallique de recouvrement sur un supraconducteur à haute température |
WO2008125091A2 (fr) | 2007-04-17 | 2008-10-23 | Thyssenkrupp Vdm Gmbh | Feuille métallique |
WO2014194881A2 (fr) | 2013-06-07 | 2014-12-11 | VDM Metals GmbH | Procédé de production d'une feuille de métal |
WO2016150781A1 (fr) | 2015-03-26 | 2016-09-29 | Basf Se | Procédé de production de fils supraconducteurs à haute température |
CN105525146A (zh) * | 2016-01-17 | 2016-04-27 | 北京工业大学 | 一种提高YBCO超导体用Ni9.3W基带立方织构含量的方法 |
CN106077642A (zh) * | 2016-07-16 | 2016-11-09 | 北京工业大学 | 一种纳米合金粉末制备涂层导体用高钨合金基带坯锭的方法 |
Non-Patent Citations (6)
Title |
---|
A. M. GOKHALE: "ASM Handbook", vol. 9, 2004, article "Quantitative Characterization and Representation of Global Microstructural Geometry", pages: 428 - 447 |
EICKEMEYER J ET AL: "Textured Ni9.0 at.% W substrate tapes for YBCO-coated conductors;Textured Ni9.0 at. per cent W substrate tapes for YBCO-coated conductors", SUPERCONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING, TECHNO HOUSE, BRISTOL, GB, vol. 23, no. 8, 12 July 2010 (2010-07-12), pages 85012, XP020195776, ISSN: 0953-2048, DOI: 10.1088/0953-2048/23/8/085012 * |
F. PENG ET AL., RARE METALS, vol. 37, 2018, pages 662 |
J. EICKEMEYER ET AL., SUPERCONDUCTOR SCIENCE AND TECHNOLOGY, vol. 23, 2010, pages 085012 |
U. GAITZSCH ET AL., SUPERCONDUCTOR SCIENCE AND TECHNOLOGY, vol. 26, 2013, pages 085024 |
UWE GAITZSCH ET AL: "Paper;Highly alloyed Ni W substrates for low AC loss applications;Highly alloyed Ni W substrates for low AC loss applications", SUPERCONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING, TECHNO HOUSE, BRISTOL, GB, vol. 26, no. 8, 11 July 2013 (2013-07-11), pages 85024, XP020248292, ISSN: 0953-2048, DOI: 10.1088/0953-2048/26/8/085024 * |
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