WO2020063429A1 - 用于原子层沉积工艺的进气装置及原子层沉积设备 - Google Patents

用于原子层沉积工艺的进气装置及原子层沉积设备 Download PDF

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Publication number
WO2020063429A1
WO2020063429A1 PCT/CN2019/106581 CN2019106581W WO2020063429A1 WO 2020063429 A1 WO2020063429 A1 WO 2020063429A1 CN 2019106581 W CN2019106581 W CN 2019106581W WO 2020063429 A1 WO2020063429 A1 WO 2020063429A1
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Prior art keywords
air inlet
hole
air intake
air
central
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2019/106581
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English (en)
French (fr)
Inventor
魏景峰
荣延栋
傅新宇
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from CN201821602949.9U external-priority patent/CN209292476U/zh
Priority claimed from CN201811149950.5A external-priority patent/CN109306470A/zh
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to JP2021513932A priority Critical patent/JP7124213B2/ja
Priority to KR1020217006442A priority patent/KR102450731B1/ko
Priority to SG11202102152WA priority patent/SG11202102152WA/en
Publication of WO2020063429A1 publication Critical patent/WO2020063429A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Definitions

  • the invention relates to the technical field of semiconductor manufacturing, and in particular, to an air intake device and an atomic layer deposition device used in an atomic layer deposition process.
  • ALD Atomic Layer Deposition
  • a first reaction precursor (Precursor) is first introduced into the reaction chamber, and molecules of the precursor will adsorb (mainly by chemical adsorption) to form active agents (Species) on the substrate surface;
  • active agents Species
  • the reaction is removed by a certain method (Purge)
  • the first precursor remaining in the chamber also generally includes a by-product of the reaction of the first precursor with the surface of the substrate, and passed into the second reaction precursor; the second precursor and the substrate already adsorbed on the substrate
  • the surface active agent (the first precursor) undergoes a chemical reaction to form a single molecular layer of the thin film to be prepared on the surface of the substrate, and releases a gaseous by-product.
  • SiH 4 and WF 6 are alternately passed into the cavity under the control of a quick-change valve installed on the respective pipeline, and, Gas flow controllers (Mass Flow Controllers, MFC for short) are also provided on the respective pipelines of SiH 4 and WF 6 to control the gas flow into the cavity.
  • Gas flow controllers Mass Flow Controllers, MFC for short
  • a shower head is arranged on the upper part of the cavity to play a role of uniform gas.
  • an air inlet device such as a buffer chamber
  • the existing air inlet device does not consider the separation of the two precursors.
  • it is easy to retain the precursors in the previous cycle in the air intake device which causes the two precursors to react in the air intake device to form sediment particles after the accumulation of several cycles.
  • These sediment particles can easily block the air intake holes.
  • the air intake device fails, and a series of problems such as the failure to achieve the initial air homogenization effect and the shortening of the maintenance period may also occur.
  • embodiments of the present invention provide an air intake device and an atomic layer deposition device for an atomic layer deposition process.
  • an air intake device for an atomic layer deposition process which includes an air intake body, and at least two cavities, an air intake channel, and at least two are provided in the air intake body.
  • Uniform air channel where,
  • At least two of the cavities are isolated from each other, each of the cavities has an air inlet, and the air inlet is used to connect with the precursor pipeline;
  • Each of the air uniform channels is used to communicate each of the cavities with the air inlet channels one-to-one correspondingly;
  • the air inlet passage is used to communicate with a process chamber.
  • the air intake body includes a first air intake block and a second air intake block; a first central through hole is provided in the first air intake block, and a second air intake block is provided in the first air intake block; There is a second central through hole, where,
  • At least a part of the first air inlet block is inserted in the second central through hole, and the first central through hole is used as the air inlet passage;
  • At least two annular gaps are formed between an inner wall of the second central through hole and an outer side wall of the first air inlet block, and are arranged at intervals along the axial direction of the first central through hole; the annular gap Used as the cavity;
  • the first air inlet block is further provided with at least two groups of air inlet holes, and the air inlet hole groups are used as the air distribution channels, and include at least one air inlet hole for connecting the air inlet hole with the air inlet hole.
  • the annular gap corresponding to the group is in communication with the first central through hole.
  • annular groove is provided on an inner wall of the second central through hole, and the annular groove and the outer side wall of the first air intake block form the annular gap; or,
  • annular groove is provided on an outer side wall of the first air intake block, and the annular groove and an inner wall of the second central through hole form the annular gap; or,
  • a first annular groove is provided on an inner wall of the second central through hole, and a second annular groove is correspondingly provided on an outer side wall of the first air intake block.
  • the first annular groove and the first Two annular grooves constitute the annular gap.
  • each group of the air intake hole groups there are multiple air intake holes in each group of the air intake hole groups, and they are evenly distributed around the axis of the first central through hole.
  • the hole diameter of each of the air inlet holes is less than 4 mm.
  • annular sealing element is provided between the inner wall of the second central through hole and the outer side wall of the first air intake block and between each adjacent two of the annular gaps.
  • the two adjacent annular gaps are hermetically isolated.
  • the annular sealing element includes a fluorine rubber sealing ring or an engineering plastic sealing ring.
  • connection flange is provided on an outer side wall of the first air inlet block, the connection flange is fixedly connected to the second air inlet block, and a first connection end face of the connection flange overlaps It is placed on the second connection end face where the air inlet end of the second central through hole of the second air inlet block is located, and a sealing structure is provided between the first connection end face and the second connection end face.
  • the sealing structure includes a sealing ring or a vacuum flange.
  • the second central through hole is a stepped hole
  • the stepped hole includes a first stepped hole section and a second stepped hole section which are sequentially arranged along the air intake direction, and the diameter of the first stepped hole section is larger than that of the stepped hole.
  • the diameter of the second stepped hole segment, at least a part of the first air inlet block is inserted in the first stepped hole segment; the first central through hole and the second stepped hole segment together constitute the Intake channel.
  • the first central through hole is coaxially disposed with the second stepped hole segment, and the apertures are the same.
  • an inclined chamfer is provided at an end where the first air inlet block of the second central through hole is inserted.
  • an atomic layer deposition apparatus including:
  • At least two precursor pipelines, and different said precursor pipelines are used to transport different precursors
  • each of the cavities has an air inlet, and the air inlet is used to be connected with a corresponding pipeline of the precursor; the air inlet channel passes through the uniform A flow nozzle is in communication with the process chamber.
  • the air inlet device for the atomic layer deposition process provided by the present invention can isolate each cavity connected to different precursor pipelines from each other, so that each cavity can be used as a special buffer cavity of a precursor, thereby It can avoid the occurrence of chemical reactions caused by the mixing of different precursors due to the shared buffer cavity, which can effectively reduce the sediment particles formed by the reaction in the air intake device, avoid the failure of the air intake device, and at the same time, improve the preliminary air homogenization effect and extend the maintenance period .
  • the atomic layer deposition equipment provided by the present invention by using the above-mentioned air intake device provided by the present invention, can avoid the occurrence of chemical reactions caused by the mixing of different precursors due to the shared buffer cavity, and can effectively reduce the deposition formed by the reaction in the air intake device Particles to avoid the failure of the air intake device, and at the same time, it can improve the preliminary air homogenization effect and extend the maintenance period.
  • FIG. 1 is a schematic diagram of an intake structure of an existing atomic layer deposition device
  • FIG. 2 is a schematic structural diagram of an air intake device for an atomic layer deposition process according to an embodiment of the present invention
  • FIG. 3 is a cross-sectional view taken along line A-A of FIG. 2;
  • FIG. 4 is a cross-sectional view of a first air intake block used in an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a second air intake block used in an embodiment of the present invention.
  • Fig. 6 is a sectional view taken along line B-B of Fig. 2;
  • FIG. 7 is a cross-sectional view taken along the line C-C of FIG. 3;
  • FIG. 8 is a schematic diagram of a sealing structure used in an embodiment of the present invention.
  • FIG. 9 is another schematic diagram of a sealing structure used in an embodiment of the present invention.
  • An embodiment of the present invention provides an air intake device for an atomic layer deposition process.
  • the air intake device includes an air intake body.
  • the air intake body is provided with at least two cavities, an air intake channel, and at least two air uniform channels.
  • At least two cavities are isolated from each other, each cavity has an air inlet, which is used to connect with the precursor pipeline; each air uniform channel is used for one-to-one correspondence between each cavity and the cavity
  • the air inlet channel is used to communicate with the process chamber.
  • the air inlet channel is connected to a uniform flow nozzle (also known as a uniform flow disk) on the top of the process chamber, and is used to connect the precursor through the uniform flow nozzle Conveying reaches the surface of the semiconductor substrate.
  • a uniform flow nozzle also known as a uniform flow disk
  • the multiple different precursors respectively enter the cavity through the air inlets of different cavities according to a certain process sequence.
  • the cavity is used as a buffer cavity to play a preliminary role.
  • the role of air homogenization after that, the precursors in the cavity enter the air inlet channel through the air homogenization channel communicating with the cavity, and enter the process chamber through the air inlet channel.
  • each cavity can be used as a dedicated buffer cavity of a precursor by connecting the air inlet of each cavity to a different precursor pipeline, thereby avoiding Due to the common buffer cavity, different precursors are mixed and chemically reacted, which can effectively reduce the sediment particles formed by the reaction in the air intake device, avoid the failure of the air intake device, and at the same time, it can improve the preliminary air homogenization effect and extend the maintenance period.
  • the air intake body includes a first air intake block 1 and a second air intake block 2.
  • the material of the first air inlet block 1 is aluminum alloy or stainless steel
  • the material of the second air inlet block 2 is aluminum alloy or stainless steel.
  • a first central through hole 20 is provided in the first air intake block 1, and a second central through hole is provided in the second air intake block 2, wherein at least a part of the first air intake block 1 is inserted in the second Inside the central through hole, and the first central through hole 20 is used as the above-mentioned air inlet passage for communicating with the process chamber.
  • annular gaps are formed between the inner wall of the second central through hole and the outer side wall of the first air inlet block 1, and are arranged along the axial direction of the first central through hole 20, specifically, the first annular gap 5 and the Below it are second annular gaps 6; each annular gap serves as the aforementioned cavity.
  • the aforementioned annular gap can be implemented in various ways.
  • two annular grooves 17 are provided on the outer side wall 18 of the first air intake block 1 along the axial interval, and the two and the inner wall of the second central through hole form the first annular gap 5 and the second annular gap, respectively.
  • an annular groove may also be provided on the inner wall of the second central through hole, and the annular groove forms an annular gap with the outer side wall 18 of the first air inlet block 1;
  • a first annular groove is provided on the inner wall of the through hole, and a second annular groove is correspondingly provided on the outer side wall 18 of the first air inlet block 1.
  • the first annular groove and the second annular groove constitute the aforementioned annular gap.
  • the air intake hole group is used as the above-mentioned air uniform passage, and includes at least one air intake hole, which is used to adjust the annular gap corresponding to the air intake hole group in which it is located. It is in communication with the first central through hole 20.
  • the two groups of air inlet holes are a first air inlet hole group and a second air inlet hole group. As shown in FIG. 7, the air inlet holes 7 in the first air hole group are multiple. And are uniformly distributed around the axis of the first central through-hole 20; similarly, there are a plurality of intake holes 8 in the second intake-hole group and are evenly distributed around the axis of the first central through-hole 20. In this way, the precursors in the annular gap can be made to enter the first central through hole 20 from each air inlet hole uniformly, so that a good air uniformity effect can be achieved.
  • each air hole group there are at least 3 air holes in each air hole group, for example, 6 air holes, etc. In this way, the uniform air effect can be further ensured.
  • the hole diameter of each air inlet is less than 4mm. In this way, it is possible to prevent precursors in the annular gap from flowing out of the intake hole quickly because the intake hole is too large, so that the annular gap cannot achieve a good cushioning effect and affect the uniform air effect.
  • each air intake hole is horizontally disposed along the radial direction of the first central through hole 20, but the present invention is not limited to this.
  • each air intake hole An angle may be formed with the radial direction of the first central through hole 20, and / or an angle may be formed with the radial cross section of the first central through hole 20.
  • the included angle can be set according to specific needs, and the inclination direction of the air inlet hole with respect to the radial or radial section.
  • two air inlets are provided in the second air inlet block 2, which are a first air inlet 9 and a second air inlet 10, respectively.
  • the hole wall of the second central through hole is in communication with the first annular gap 5 and the second annular gap 6, respectively; the air inlet ends of the two are located on the outer side wall of the second air inlet block 2 and are used for different front drive Material pipeline connection.
  • each of the first air inlet 9 and the second air inlet 10 is two, and the two first air inlets 9 (or the two second air inlets 10) are open relative to the first center.
  • the axis of the hole 20 is arranged symmetrically, and two first air inlets 9 (or two second air inlets 10) are used to pass in precursors and diluent gases, respectively. Since the ALD process requires constant pressure, During the switching process, the total amount of intake air can be adjusted by diluting the gas, thereby ensuring constant pressure conditions inside the chamber and ensuring process stability.
  • the present invention is not limited to this. In practical applications, the first air inlet 9 (or the second air inlet 10) may also be one or three or more.
  • annular sealing element 3 is provided between the gaps 6) to seal and isolate two adjacent annular gaps.
  • annular sealing element 3 is also provided below the second annular gap 6 to seal the gap between the first air inlet block 1 and the second central through hole at the lower portion of the second annular gap 6.
  • the annular sealing element 3 may include a fluorine rubber sealing ring or an engineering plastic sealing ring, and the engineering plastic sealing ring is, for example, PTFE, PA, PFA, PU, or the like.
  • the second central through hole is a stepped hole
  • the stepped hole includes a first stepped hole section 21 and a second stepped hole section 22 which are sequentially arranged along the air intake direction.
  • the first central through-hole 20 and the second stepped hole section 22 together constitute an intake passage vertically disposed at the center.
  • the first central through hole 20 and the second stepped hole section 22 are coaxially arranged and have the same aperture. In this way, the stability of the air flow can be guaranteed.
  • an inclined chamfer 11 is provided at an end where the first air inlet block 1 of the second central through hole is inserted, that is, the upper port of the first stepped hole section 21.
  • the opening size at the upper end of the first stepped hole section 21 can be enlarged, so that the ring-shaped sealing element 3 can be prevented from being scratched or damaged during the process of inserting the first air inlet block 1 into the first stepped hole section 21, And it is convenient for the first air intake block 1 to be smoothly inserted into the second air intake block 2.
  • a connection flange 16 is provided on an outer side wall of the first air inlet block 1, and the connection flange 16 is fixedly connected to the second air inlet block 2 and is connected to
  • the first connection end face 162 of the flange 16 is stacked on the second connection end face 211 where the air inlet end of the second central through hole of the second air inlet block 2 is located, and the first connection end face 162 and the second connection end face 211
  • a sealing structure 4 is provided therebetween.
  • a screw countersunk hole 161 is provided in the connection flange 16, and a threaded hole 19 is correspondingly provided on the second connection end face 211 of the second air inlet block 2.
  • the screw is installed in the screw countersunk hole 161. And the corresponding screw hole 19 to realize the fixed connection between the connection flange 16 and the second air inlet block 2.
  • the above-mentioned sealing structure 4 includes a sealing ring or a vacuum flange.
  • the sealing ring is, for example, an O-ring
  • the vacuum flange is, for example, a KF / ISO vacuum flange or a CF vacuum flange.
  • the ISO vacuum flange includes a centering ring 12 and a hook screw 13.
  • the CF vacuum flange includes a metal seal ring 14 such as a copper seal (Copper Seal) and the like.
  • the air intake device for the atomic layer deposition process provided by the embodiment of the present invention can isolate each cavity as a precursor by isolating different cavities communicating with different precursor pipelines from each other.
  • Dedicated buffer cavity of the material which can avoid the chemical reaction of different precursors due to the shared buffer cavity, which can effectively reduce the sediment particles formed by the reaction in the air intake device, avoid the failure of the air intake device, and improve the preliminary Uniform air effect to extend the maintenance period.
  • an atomic layer deposition device which includes: a uniform flow nozzle set in a process chamber; at least two precursor pipes, and different precursor pipes The channels are used to transport different precursors; and the air intake device in any of the above embodiments, wherein the air inlets of different cavities are connected to different precursor pipelines; the air intake channels are connected to the process chamber through a uniform flow nozzle Room connected.
  • the air inlet device and the atomic layer deposition device for the atomic layer deposition process provided by the embodiment of the present invention are applicable to various ALD process equipment, such as ALDL, TiN, TaN, Al 2 O 3, etc., and are also applicable to Thermal ALD and PEALD. .
  • the atomic layer deposition equipment provided by the embodiment of the present invention can avoid the occurrence of chemical reactions due to the mixing of different precursors due to the sharing of the buffer cavity by using the above-mentioned air intake device provided by the embodiment of the present invention, thereby effectively reducing the number of The sediment particles formed by the reaction can avoid the failure of the air intake device, and at the same time, it can improve the preliminary air homogenization effect and extend the maintenance period.
  • a fixed connection can be understood as: a detachably fixed connection (such as a bolt or screw connection), or It is understood as: non-removable fixed connection (such as riveting, welding), of course, the fixed connection to each other can also be replaced by an integrated structure (such as manufactured by integral molding using a casting process) (except that an integral molding process cannot obviously be used).
  • any component provided by the present invention can be assembled from a plurality of separate components, or it can be a separate component manufactured by an integral molding process.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明实施例公开了一种用于原子层沉积工艺的进气装置及原子层沉积设备，该装置包括进气本体，在该进气本体中设置有至少两个空腔、进气通道及至少两个匀气通道，其中，至少两个空腔均相互隔离，每个空腔均具有进气口，该进气口用于与前驱物管路连接；各个匀气通道用于一一对应地将各个空腔与进气通道连通；进气通道用于与工艺腔室连通。本发明提供的用于原子层沉积工艺的进气装置及原子层沉积设备的技术方案，可以避免因共用缓冲腔而出现不同前驱物混合发生化学反应，进而可以有效减少在进气装置中反应形成的沉积物颗粒，避免进气装置失效，同时还可以改善初步匀气效果，延长维护周期。

Description

用于原子层沉积工艺的进气装置及原子层沉积设备 技术领域
本发明涉及半导体制造技术领域，尤其涉及一种用于原子层沉积工艺的进气装置及原子层沉积设备。
背景技术
原子层沉积(Atomic Layer Deposition，以下简称ALD)技术是一种可以将物质以单原子膜形式逐层沉积在基底表面的方法，其生长过程具有周期性，一个制备周期一般包括两个自限制反应(Self-limitreaction)。在一定温度条件下，首先向反应腔室中通入第一种反应前驱物(Precursor)，该前驱物的分子会吸附(以化学吸附为主)在衬底表面上形成活性剂(Species)；当前驱物的吸附达到饱和状态时，化学吸附反应结束，实现了第一种前驱物同衬底表面反应的自限制控制(第一个自限制反应)；然后，通过一定方法去除(Purge)反应腔室中残留的第一种前驱物(一般还包括第一种前驱物同衬底表面反应的副产物)，并通入第二种反应前驱物；第二种前驱物与已吸附在衬底表面的活性剂(第一种前驱物)发生化学反应，在衬底表面生成所要制备的薄膜的单分子层，并释放气态的副产物。
如图1所示，以两种前驱物分别为SiH 4和WF 6为例，SiH 4和WF 6通过安装在各自管路上的快速切换阀的控制下，被交替通入腔体中，并且，在SiH 4和WF 6各自管路上还设置有气体质量流量控制器(Mass Flow Controller，简称MFC)，用以分别控制通入腔体中的气体流量。此外，在腔体上部还设置有匀流盘(Showerhead)，用以起到匀气作用。针对ALD工艺的上述两种前驱物，一旦相遇会立即发生化学反应，因此，需要以脉冲形式交替进入腔体，且在到达衬底表面前，需要尽量隔离两种前驱物，防止二者在到达衬底前发 生反应。
另外，在匀流盘的进气端一侧通常还会设置用于进行初步匀气的进气装置，例如缓冲腔，但是，现有的进气装置没有考虑到对两种前驱物进行隔离，且在进气装置中很容易滞留上一个周期中的前驱物，导致经过若干周期累积后，两种前驱物会在进气装置中反应形成沉积物颗粒，这些沉积物颗粒很容易堵塞进气孔而导致进气装置失效，而且还可能产生达不到初步匀气效果、缩短维护周期等一系列问题。
发明内容
有鉴于此，本发明实施例提供一种用于原子层沉积工艺的进气装置及原子层沉积设备。
根据本发明实施例的一个方面，提供一种用于原子层沉积工艺的进气装置，包括进气本体，在所述进气本体中设置有至少两个空腔、进气通道及至少两个匀气通道，其中，
至少两个所述空腔均相互隔离，每个所述空腔均具有进气口，所述进气口用于与前驱物管路连接；
各个所述匀气通道用于一一对应地将各个所述空腔与所述进气通道连通；
所述进气通道用于与工艺腔室连通。
可选的，所述进气本体包括第一进气块和第二进气块；在所述第一进气块中设置有第一中心通孔，且在所述第二进气块中设置有第二中心通孔，其中，
所述第一进气块的至少一部分插设在所述第二中心通孔内，且所述第一中心通孔用作所述进气通道；
在所述第二中心通孔的内壁和所述第一进气块的外侧壁之间形成有至 少两个环形间隙，且沿所述第一中心通孔的轴向间隔设置；所述环形间隙用作所述空腔；
在所述第一进气块中还设置有至少两组进气孔组，所述进气孔组用作所述匀气通道，且包括至少一个进气孔，用于将与其所在进气孔组对应的所述环形间隙与所述第一中心通孔相连通。
可选的，在所述第二中心通孔的内壁上设置有环形槽，所述环形槽与所述第一进气块的外侧壁构成所述环形间隙；或者，
在所述第一进气块的外侧壁上设置有环形槽，所述环形槽与所述第二中心通孔的内壁构成所述环形间隙；或者，
在所述第二中心通孔的内壁上设置有第一环形槽，且对应地在所述第一进气块的外侧壁上设置有第二环形槽，所述第一环形槽和所述第二环形槽构成所述环形间隙。
可选的，每组所述进气孔组中的进气孔为多个，且围绕所述第一中心通孔的轴线均匀分布。
可选的，每个所述进气孔的孔径小于4mm。
可选的，在所述第二中心通孔的内壁和所述第一进气块的外侧壁之间，且位于各个相邻的两个所述环形间隙之间设置有环形密封元件，用以使相邻的两个所述环形间隙密封隔离。
可选的，所述环形密封元件包括氟橡胶密封圈或者工程塑料密封圈。
可选的，在所述第一进气块的外侧壁上设置有连接法兰，所述连接法兰与所述第二进气块固定连接，且所述连接法兰的第一连接端面叠置在所述第二进气块的所述第二中心通孔的进气端所在的第二连接端面上，且在所述第一连接端面和所述第二连接端面之间设置有密封结构。
可选的，所述密封结构包括密封圈或真空法兰。
可选的，所述第二中心通孔为阶梯孔，所述阶梯孔包括沿进气方向依次 设置的第一阶梯孔段和第二阶梯孔段，所述第一阶梯孔段的直径大于所述第二阶梯孔段的直径，所述第一进气块的至少一部分插设在所述第一阶梯孔段内；所述第一中心通孔与所述第二阶梯孔段共同构成所述进气通道。
可选的，所述第一中心通孔与所述第二阶梯孔段同轴设置，且孔径相同。
可选的，在所述第二中心通孔的所述第一进气块插入的一端设置有倾斜的倒角。
根据本发明实施例的另一个方面，还提供一种原子层沉积设备，包括：
匀流喷头，设置在工艺腔室内；
至少两条前驱物管路，不同的所述前驱物管路用于输送不同的前驱物；以及
本发明提供的上述进气装置，其中，每个所述空腔均具有进气口，所述进气口用于与相应的所述前驱物管路连接；所述进气通道通过所述匀流喷头与所述工艺腔室连通。
本发明提供的用于原子层沉积工艺的进气装置，其通过使与不同的前驱物管路连通的不同空腔相互隔离，可以将每个空腔作为一种前驱物的专用缓冲腔，从而可以避免因共用缓冲腔而出现不同前驱物混合发生化学反应，进而可以有效减少在进气装置中反应形成的沉积物颗粒，避免进气装置失效，同时还可以改善初步匀气效果，延长维护周期。
本发明提供的原子层沉积设备，其通过采用本发明提供的上述进气装置，可以避免因共用缓冲腔而出现不同前驱物混合发生化学反应，进而可以有效减少在进气装置中反应形成的沉积物颗粒，避免进气装置失效，同时还可以改善初步匀气效果，延长维护周期。
本发明实施例附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其它的附图：
图1为现有的原子层沉积设备的进气结构示意图；
图2为本发明实施例提供的用于原子层沉积工艺的进气装置的结构示意图；
图3为沿图2的A-A线的剖视图；
图4为本发明实施例采用的第一进气块的剖视图；
图5为本发明实施例采用的第二进气块的剖视图；
图6为沿图2的B-B线的剖视图；
图7为沿图3的C-C线的剖视图；
图8为本发明实施例采用的密封结构的一种示意图；
图9为本发明实施例采用的密封结构的另一种示意图。
具体实施方式
下面参照附图对本发明进行更全面的描述，其中说明本发明的示例性实施例。下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。下面结合图和实施例对本发明的技术方案进行多方面的描述。
下文为了叙述方便，下文中所称的“左”、“右”、“上”、“下”与附图本身的左、右、上、下方向一致。下文中的“第一”、“第二”等，仅用于描述上相 区别，并没有其它特殊的含义。
本发明实施例提供一种用于原子层沉积工艺的进气装置，其包括进气本体，在该进气本体中设置有至少两个空腔、进气通道及至少两个匀气通道，其中，至少两个空腔均相互隔离，每个空腔均具有进气口，该进气口用于与前驱物管路连接；各个匀气通道用于一一对应地将各个空腔与所述进气通道连通；进气通道用于与工艺腔室连通，具体地，进气通道与工艺腔室顶部的匀流喷头(又称匀流盘)连接，用以经由该匀流喷头将前驱物输送到达半导体衬底的表面。
在进气装置输送多种不同的前驱物的过程中，多种不同的前驱物按一定的工艺顺序分别通过不同的空腔的进气口进入空腔，该空腔用作缓冲腔起到初步匀气的作用；之后，空腔中的前驱物通过与该空腔连通的匀气通道进入进气通道，并经由该进气通道进入工艺腔室。
由此，通过使不同空腔相互隔离，可以通过使每个空腔的进气口与不同的前驱物管路连接，而将每个空腔作为一种前驱物的专用缓冲腔，从而可以避免因共用缓冲腔而出现不同前驱物混合发生化学反应，进而可以有效减少在进气装置中反应形成的沉积物颗粒，避免进气装置失效，同时还可以改善初步匀气效果，延长维护周期。
下面以两种不同的前驱物为例，对本实施例提供的进气装置进行详细描述。请一并参阅图2至图7，进气本体包括第一进气块1和第二进气块2。可选的，第一进气块1的材质为铝合金或不锈钢等，第二进气块2的材质为铝合金或不锈钢等。在第一进气块1中设置有第一中心通孔20，且在第二进气块2中设置有第二中心通孔，其中，第一进气块1的至少一部分插设在第二中心通孔内，且该第一中心通孔20用作上述进气通道，用于与工艺腔室连通。
在第二中心通孔的内壁和第一进气块1的外侧壁之间形成有两个环形间隙，且沿第一中心通孔20的轴向间隔设置，具体为第一环形间隙5和位于 其下方的第二环形间隙6；每个环形间隙用作上述空腔。
上述环形间隙可以有多种实现方式。例如，在第一进气块1的外侧壁18上沿其轴向间隔设置有两个环形槽17，二者与第二中心通孔的内壁分别构成上述第一环形间隙5和第二环形间隙6。当然，在实际应用中，也可以在第二中心通孔的内壁上设置有环形槽，该环形槽与第一进气块1的外侧壁18构成环形间隙；或者，还可以分别在第二中心通孔的内壁上设置有第一环形槽，且对应地在第一进气块1的外侧壁18上设置有第二环形槽，第一环形槽和第二环形槽构成上述环形间隙。
在第一进气块1中还设置有两组进气组，该进气孔组用作上述匀气通道，且包括至少一个进气孔，用于将与其所在进气孔组对应的环形间隙与第一中心通孔20相连通。在本实施例中，两组进气孔组分别为第一进气孔组和第二进气孔组，其中，如图7所示，第一进气孔组中的进气孔7为多个，且围绕第一中心通孔20的轴线均匀分布；同样的，第二进气孔组中的进气孔8为多个，且围绕第一中心通孔20的轴线均匀分布。这样，可以使环形间隙中的前驱物能够均匀地从各个进气孔进入第一中心通孔20中，从而可以起到很好的匀气效果。
可选的，每组进气孔组中的进气孔至少为3个，例如为6个等，这样，可以进一步保证匀气效果。
可选的，每个进气孔的孔径小于4mm。这样，可以避免因进气孔过大而使环形间隙中的前驱物还未扩散就很快从进气孔流出，从而使环形间隙无法达到很好的缓冲作用，影响匀气效果。
需要说明的是，在本实施例中，每个进气孔均沿第一中心通孔20的径向水平设置，但是，本发明并不局限于此，在实际应用中，每个进气孔也可以与第一中心通孔20的径向呈夹角，和/或与第一中心通孔20的径向截面呈夹角。通过设计该夹角，可以改变自进气孔流出的气体的流动方向，以达到 理想的匀气效果。可以根据具体需要设定夹角大小，以及进气孔相对于径向或径向截面的倾斜方向。
在本实施例中，如图5所示，在第二进气块2中设置有两个进气口，分别为第一进气口9和第二进气口10，二者的出气端位于第二中心通孔的孔壁上，且分别与第一环形间隙5和第二环形间隙6连通；二者的进气端位于第二进气块2的外侧壁上，用于与不同的前驱物管路连接。如图6所示，第一进气口9和第二进气口10均为两个，且两个第一进气口9(或两个第二进气口10)相对于第一中心通孔20的轴线对称设置，并且，两个第一进气口9(或两个第二进气口10)分别用于通入前驱物和稀释气体，由于ALD工艺需要恒压，在前驱物的切换过程中，可以通过稀释气体来调节进气总量，从而可以保证腔室内部的恒压条件，保证工艺的稳定性。但是，本发明并不局限于此，在实际应用中，第一进气口9(或第二进气口10)也可以为一个或者三个以上。
在一个实施例中，在第二中心通孔的内壁和第一进气块1的外侧壁18之间，且位于各个相邻的两个环形间隙(即，第一环形间隙5和第二环形间隙6)之间设置有环形密封元件3，用以使相邻的两个环形间隙密封隔离。另外，在本实施例中，在第二环形间隙6的下方也设置有环形密封元件3，用以对第一进气块1和第二中心通孔在第二环形间隙6下部的间隙进行密封。可选的，环形密封元件3可以包括氟橡胶密封圈或者工程塑料密封圈等，该工程塑料密封圈例如为PTFE、PA、PFA、PU等。
在一个实施例中，第二中心通孔为阶梯孔，该阶梯孔包括沿进气方向依次设置的第一阶梯孔段21和第二阶梯孔段22，第一阶梯孔段21的直径大于第二阶梯孔段22的直径，第一进气块1的至少一部分插设在第一阶梯孔段21内。第一中心通孔20与第二阶梯孔段22共同构成在中心竖直设置的进气通道。
可选的，第一中心通孔20与第二阶梯孔段22同轴设置，且孔径相同。这样，可以保证气流的稳定性。
在一个实施例中，如图5所示，在第二中心通孔的第一进气块1插入的一端，即，第一阶梯孔段21的上端口设置有倾斜的倒角11。借助该倒角11，可以扩大第一阶梯孔段21上端的开口尺寸，从而在第一进气块1插入第一阶梯孔段21的过程中，可以避免环形密封元件3被划伤或损坏，且便于第一进气块1能够顺利地插入第二进气块2中。
在一个实施例中，如图4和图5所示，在第一进气块1的外侧壁上设置有连接法兰16，该连接法兰16与第二进气块2固定连接，且连接法兰16的第一连接端面162叠置在第二进气块2的第二中心通孔的进气端所在的第二连接端面211上，且在第一连接端面162和第二连接端面211之间设置有密封结构4。具体地，在连接法兰16中设有螺钉沉头孔161，且对应地在第二进气块2的第二连接端面211上设置有螺纹孔19，通过将螺钉安装在螺钉沉头孔161和与之对应的螺纹孔19中，来实现连接法兰16与第二进气块2的固定连接。
在实际应用中，上述密封结构4包括密封圈或真空法兰等。该密封圈例如为O型橡胶圈；真空法兰例如为KF/ISO真空法兰或CF真空法兰等。具体地，如图8所示，对于ISO真空法兰，其包括定心环(Centering Ring)12和勾头螺钉13。如图9所示，对于CF真空法兰，其包括金属密封圈14，如铜密封圈(Copper Seal)等。
综上所述，本发明实施例提供的用于原子层沉积工艺的进气装置，其通过使与不同的前驱物管路连通的不同空腔相互隔离，可以将每个空腔作为一种前驱物的专用缓冲腔，从而可以避免因共用缓冲腔而出现不同前驱物混合发生化学反应，进而可以有效减少在进气装置中反应形成的沉积物颗粒，避免进气装置失效，同时还可以改善初步匀气效果，延长维护周期。
在一个实施例中，根据本发明实施例的另一方面，提供一种原子层沉积设备，其包括：匀流喷头，设置在工艺腔室内；至少两条前驱物管路，不同的前驱物管路用于输送不同的前驱物；以及上述任一实施例中的进气装置，其中，不同的空腔的进气口与不同的前驱物管路连接；进气通道通过匀流喷头与工艺腔室连通。
本发明实施例提供的用于原子层沉积工艺的进气装置及原子层沉积装置适用于各种ALD工艺设备，如ALDW、TiN、TaN、Al 2O 3等，还适用于Thermal ALD和PEALD等。
本发明实施例提供的原子层沉积设备，其通过采用本发明实施例提供的上述进气装置，可以避免因共用缓冲腔而出现不同前驱物混合发生化学反应，进而可以有效减少在进气装置中反应形成的沉积物颗粒，避免进气装置失效，同时还可以改善初步匀气效果，延长维护周期。
上述本发明所公开的任一技术方案除另有声明外，如果其公开了数值范围，那么公开的数值范围均为优选的数值范围，任何本领域的技术人员应该理解：优选的数值范围仅仅是诸多可实施的数值中技术效果比较明显或具有代表性的数值。由于数值较多，无法穷举，所以本发明才公开部分数值以举例说明本发明的技术方案，并且，上述列举的数值不应构成对本发明创造保护范围的限制。
同时，上述本发明如果公开或涉及了互相固定连接的零部件或结构件，那么，除另有声明外，固定连接可以理解为：能够拆卸地固定连接(例如使用螺栓或螺钉连接)，也可以理解为：不可拆卸的固定连接(例如铆接、焊接)，当然，互相固定连接也可以为一体式结构(例如使用铸造工艺一体成形制造出来)所取代(明显无法采用一体成形工艺除外)。
另外，上述本发明公开的任一技术方案中所应用的用于表示位置关系或形状的术语除另有声明外其含义包括与其近似、类似或接近的状态或形状。 本发明提供的任一部件既可以是由多个单独的组成部分组装而成，也可以为一体成形工艺制造出来的单独部件。
以上实施例仅用以说明本发明的技术方案而非对其限制；尽管参照较佳实施例对本发明进行了详细的说明，所属领域的普通技术人员应当理解：依然可以对本发明的具体实施方式进行修改或者对部分技术特征进行等同替换；而不脱离本发明技术方案的精神，其均应涵盖在本发明请求保护的技术方案范围当中。
本发明的描述是为了示例和描述起见而给出的，而并不是无遗漏的或者将本发明限于所公开的形式。很多修改和变化对于本领域的普通技术人员而言是显然的。选择和描述实施例是为了更好说明本发明的原理和实际应用，并且使本领域的普通技术人员能够理解本发明从而设计适于特定用途的带有各种修改的各种实施例。

Claims (13)

  1. 一种用于原子层沉积工艺的进气装置，其特征在于，包括进气本体，在所述进气本体中设置有至少两个空腔、进气通道及至少两个匀气通道，其中，
    至少两个所述空腔均相互隔离，每个所述空腔均具有进气口，所述进气口用于与前驱物管路连接；
    各个所述匀气通道用于一一对应地将各个所述空腔与所述进气通道连通；
    所述进气通道用于与工艺腔室连通。
  2. 根据权利要求1所述的进气装置，其特征在于，所述进气本体包括第一进气块和第二进气块；在所述第一进气块中设置有第一中心通孔，且在所述第二进气块中设置有第二中心通孔，其中，
    所述第一进气块的至少一部分插设在所述第二中心通孔内，且所述第一中心通孔用作所述进气通道；
    在所述第二中心通孔的内壁和所述第一进气块的外侧壁之间形成有至少两个环形间隙，且沿所述第一中心通孔的轴向间隔设置；所述环形间隙用作所述空腔；
    在所述第一进气块中还设置有至少两组进气孔组，所述进气孔组用作所述匀气通道，且包括至少一个进气孔，用于将与其所在进气孔组对应的所述环形间隙与所述第一中心通孔相连通。
  3. 根据权利要求2所述的进气装置，其特征在于，在所述第二中心通孔的内壁上设置有环形槽，所述环形槽与所述第一进气块的外侧壁构成所述环形间隙；或者，
    在所述第一进气块的外侧壁上设置有环形槽，所述环形槽与所述第二中 心通孔的内壁构成所述环形间隙；或者，
    在所述第二中心通孔的内壁上设置有第一环形槽，且对应地在所述第一进气块的外侧壁上设置有第二环形槽，所述第一环形槽和所述第二环形槽构成所述环形间隙。
  4. 根据权利要求2所述的进气装置，其特征在于，每组所述进气孔组中的进气孔为多个，且围绕所述第一中心通孔的轴线均匀分布。
  5. 根据权利要求2所述的进气装置，其特征在于，每个所述进气孔的孔径小于4mm。
  6. 根据权利要求2所述的进气装置，其特征在于，在所述第二中心通孔的内壁和所述第一进气块的外侧壁之间，且位于各个相邻的两个所述环形间隙之间设置有环形密封元件，用以使相邻的两个所述环形间隙密封隔离。
  7. 根据权利要求6所述的进气装置，其特征在于，所述环形密封元件包括氟橡胶密封圈或者工程塑料密封圈。
  8. 如权利要求2所述的进气装置，其特征在于，在所述第一进气块的外侧壁上设置有连接法兰，所述连接法兰与所述第二进气块固定连接，且所述连接法兰的第一连接端面叠置在所述第二进气块的所述第二中心通孔的进气端所在的第二连接端面上，且在所述第一连接端面和所述第二连接端面之间设置有密封结构。
  9. 如权利要求8所述的进气装置，其特征在于，所述密封结构包括密封圈或真空法兰。
  10. 如权利要求2所述的进气装置，其特征在于，所述第二中心通孔为阶梯孔，所述阶梯孔包括沿进气方向依次设置的第一阶梯孔段和第二阶梯孔段，所述第一阶梯孔段的直径大于所述第二阶梯孔段的直径，所述第一进气块的至少一部分插设在所述第一阶梯孔段内；所述第一中心通孔与所述第二阶梯孔段共同构成所述进气通道。
  11. 如权利要求10所述的进气装置，其特征在于，所述第一中心通孔与所述第二阶梯孔段同轴设置，且孔径相同。
  12. 如权利要求2所述的进气装置，其特征在于，在所述第二中心通孔的所述第一进气块插入的一端设置有倾斜的倒角。
  13. 一种原子层沉积设备，其特征在于，包括：
    匀流喷头，设置在工艺腔室内；
    至少两条前驱物管路，不同的所述前驱物管路用于输送不同的前驱物；以及
    权利要求1至12任一项所述的进气装置，其中，每个所述空腔均具有进气口，所述进气口用于与相应的所述前驱物管路连接；所述进气通道通过所述匀流喷头与所述工艺腔室连通。
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