WO2020057085A1 - 拉伸电极、电子器件及其制备方法 - Google Patents

拉伸电极、电子器件及其制备方法 Download PDF

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Publication number
WO2020057085A1
WO2020057085A1 PCT/CN2019/079736 CN2019079736W WO2020057085A1 WO 2020057085 A1 WO2020057085 A1 WO 2020057085A1 CN 2019079736 W CN2019079736 W CN 2019079736W WO 2020057085 A1 WO2020057085 A1 WO 2020057085A1
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Prior art keywords
electronic device
layer
elastic layer
conductive
region
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PCT/CN2019/079736
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English (en)
French (fr)
Inventor
王涛
李旭娜
翟峰
贾松霖
程卫高
任雅磊
Original Assignee
昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Publication of WO2020057085A1 publication Critical patent/WO2020057085A1/zh
Priority to US16/852,577 priority Critical patent/US11019723B2/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0277—Bendability or stretchability details
    • H05K1/0283—Stretchable printed circuits
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0133—Elastomeric or compliant polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0183—Dielectric layers
    • H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09218—Conductive traces
    • H05K2201/09263—Meander
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10121—Optical component, e.g. opto-electronic component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10151—Sensor

Definitions

  • the present application belongs to the technical field of electronic devices, and particularly relates to a stretching electrode and an electronic device.
  • the technical problem to be solved by the present application is that the existing flexible electronic devices have the defects of poor tensile properties and low electrical stability during the preparation process, so as to provide a stretched electrode and an electronic device.
  • the stretch electrodes provided in this application include,
  • the substrate includes a first elastic layer and a second elastic layer.
  • the second elastic layer is disposed on the first elastic layer, and an elastic modulus of the second elastic layer is smaller than that of the first elastic layer. Modulus
  • a conductive region formed on a side of the second elastic layer away from the first elastic layer
  • the electronic device integration area is formed on a side of the second elastic layer away from the first elastic layer.
  • the shape of the conductive region is curved, and a conductive layer is disposed therein, and the conductive layer is arranged in a curved shape in the conductive region.
  • the material of the second elastic layer includes polyimide (PI), polycarbonate (PC), polymethyl methacrylate (PMMA), and polyethylene terephthalate (PET ).
  • PI polyimide
  • PC polycarbonate
  • PMMA polymethyl methacrylate
  • PET polyethylene terephthalate
  • the thickness of the second elastic layer is 5 ⁇ m to 30 ⁇ m.
  • the conductive layer is a metal wire, and a width of the metal wire is equal to a width of the conductive region.
  • the metal wire includes a straight segment and a curved segment, the curved segment is connected between adjacent straight segments, and the curved segment includes at least one U-shaped structure.
  • the protrusion directions of two adjacent U-shaped structures are opposite.
  • the thickness of the conductive layer is 100 nm-2 ⁇ m.
  • it further includes an insulating layer disposed on the conductive layer and covering the conductive layer, and a plurality of soldering through holes are provided on the insulating layer; a pad is formed on the insulating layer and fills the conductive layer.
  • the soldering via is connected to the conductive layer.
  • the conductive region and the electronic device integration region are both formed on the substrate, and the conductive region has a region overlapping the electronic device integration region.
  • a part of the conductive region is formed on the substrate, and the electronic device integration region is formed on the substrate.
  • a partial region of the conductive region formed on the substrate is an overlapping region of the conductive region and an electronic device integration region.
  • the electronic device integration area is a first groove provided on the substrate, the conductive area is a second groove having a curved shape, and the second groove and the first groove are The grooves intersect, and the groove bottom of the second groove is lower than the groove bottom of the first groove.
  • the width of the metal wire is smaller than the width of the substrate.
  • the electronic device integration area is located at the intersection of two straight segments of the two metal wires.
  • the two straight line segments at the intersection are made of the same metal.
  • the shape of the electronic device integration area is a square shape.
  • the conductive layer is a metal conductive layer.
  • the metal conductive layer is a copper layer, a titanium copper layer, a gold layer, or an aluminum layer.
  • the pad is a Sn layer, an In layer, or an Au layer.
  • the present application also provides an electronic device including the stretched electrode described above.
  • the shape of the conductive region is curved, and a conductive layer is disposed therein, and the conductive layer is arranged in a curved shape in the conductive region.
  • the electronic device body is integrated in the electronic device integration area, and the electronic device body is in contact with the conductive layer.
  • the electronic device further includes a third elastic layer, and the third elastic layer covers the On the electronic device body, and the first elastic layer or the second elastic layer and the third elastic layer are in contact with each other to package the electronic device body.
  • the electronic device body is a photoelectric device or a sensor.
  • the electronic device body is a sensor chip, an LED, or a Micro LED.
  • the thickness of the third elastic layer is 50 ⁇ m-500 ⁇ m.
  • the first elastic layer and the third elastic layer are a thermoplastic polyurethane elastomer (TPU), a silicone rubber, or the like.
  • TPU thermoplastic polyurethane elastomer
  • silicone rubber or the like.
  • the application also provides a method for preparing an electronic device, including the following steps:
  • a substrate is provided; the substrate includes a first elastic layer and a second elastic layer, the second elastic layer is disposed on the first elastic layer, and an elastic modulus of the second elastic layer is less than the first elastic layer The elastic modulus of an elastic layer;
  • the shape of the conductive region is curved, and a conductive layer is disposed therein, and the conductive layer is arranged in a curved shape in the conductive region.
  • the substrate includes a substrate including a first elastic layer and a second elastic layer.
  • the second elastic layer is disposed on the first elastic layer, and the elastic modulus of the second elastic layer is less than An elastic modulus of the first elastic layer; a conductive region formed on a side of the second elastic layer away from the first elastic layer; an electronic device integration region formed on the second elastic layer away from the first One side of the elastic layer.
  • the shape of the conductive area By setting the shape of the conductive area to be curved, a conductive layer is provided therein, and the conductive layer is arranged in a curved shape in the conductive area.
  • the shape of the conductive area is set to a curved conductive layer for setting a curved shape. Since the curved shape has a buffering effect, while improving the stretching effect of the stretching electrode, the electronic device in the integrated area of the electronic device is prevented from being damaged. . Therefore, the stretching electrode can ensure that the entire electronic device can be stretched, the electronic device is not damaged when stretched, and the change in tensile resistance is small. After testing, the conductive layer can be stretched more than 20%, the resistance change rate is less than 1.5%, The device is not damaged.
  • the structure of the substrate will not be damaged or affected.
  • the width of the metal wire By setting the width of the metal wire to be smaller than the width of the substrate, this facilitates the packaging of the metal wire and prevents the side wall of the metal wire from oxidizing.
  • the metal wire includes a straight line segment and a curved line segment, the curved line segment is connected between adjacent straight line segments, the curved line segment includes at least one U-shaped structure, or when the curved line segment includes two When there are two or more U-shaped structures, the protrusion directions of two adjacent U-shaped structures are opposite.
  • the electronic device integration area is located at the intersection of two straight line segments of the two metal wires. At the same time, the two straight line segments at the intersection are made of the same metal, such as copper.
  • the metal wire and the metal wire at the connection point of the electronic device use the same metal, such as copper, made on the same layer and patterned at the same time.
  • the metal wire at the connection point is straight, and the metal wire between the electronic devices is U-shaped or horseshoe. The shape curve can ensure that the electronic device is uniformly stressed during stretching, which is conducive to improving the stretching performance.
  • connection points and wires of the electronic device are patterned.
  • the link area of the electronic device is set to a square shape.
  • the overall structure can be stretched.
  • the non-stretchable area has a compact structure and a small area ratio.
  • An insulating layer covering the conductive layer is provided on the conductive layer to protect the conductive layer.
  • FIG. 1 is a schematic structural diagram of an electronic device in an embodiment of the present application.
  • FIG. 2 is a schematic cross-sectional structure view at A in FIG. 1;
  • FIG 3 is an integrated structural diagram of an electronic device in an embodiment of the present application.
  • FIG. 4 is a flowchart of a method for manufacturing an electronic device according to an embodiment of the present application.
  • This embodiment provides a stretching electrode, as shown in FIGS. 1 and 2, including a substrate 1 and a conductive region 3 and an electronic device integration region 2.
  • the substrate 1 may be composed of two layers of material, and the rigidity of the two layers of material different.
  • a layer close to the conductive region 3 is a second elastic layer 12, which is made of a material with less elastic deformation, ie, greater rigidity, such as polyimide (PI), polycarbonate ( PC), polymethyl methacrylate (PMMA), and polyethylene terephthalate (PET), preferably polyimide.
  • PI polyimide
  • PC polycarbonate
  • PMMA polymethyl methacrylate
  • PET polyethylene terephthalate
  • a layer away from the conductive region 3 in the substrate 1 is a first elastic layer 11, which is made of a material with greater elastic deformation, ie, less rigidity, such as a thermoplastic polyurethane elastomer (TPU) or silicon Rubber etc.
  • TPU thermoplastic polyurethane elastomer
  • silicon Rubber etc.
  • the deformation of the second elastic layer is smaller than that of the first elastic layer, so that it is not easy to damage the electrons.
  • the thickness of the second elastic layer is 5 ⁇ m to 30 ⁇ m, for example, it may be 10 ⁇ m, 15 ⁇ m, 20 ⁇ m, or 25 ⁇ m.
  • Both the conductive region 3 and the electronic device integration region 2 are formed on the substrate 1, and the conductive region 3 has a region overlapping the electronic device integration region 2. Among them, a part of the conductive region 3 may overlap the electronic device integration region 2, or the conductive region 3 and the electronic device integration region 2 may all overlap. Specifically, the conductive region 3 may be a square-shaped conductive region.
  • the shape of the conductive region 3 is curved, and a conductive layer 4 is disposed therein, and the conductive layer 4 is arranged in a curved shape in the conductive region 3.
  • the conductive layer 4 is a metal conductive layer, and the thickness of the metal conductive layer is 100 nm to 2 ⁇ m, and may be, for example, 200 nm, 500 nm, 800 nm, 1 ⁇ m, 1.5 ⁇ m, or the like.
  • the metal conductive layer is a copper layer, a titanium copper layer, a gold layer, or an aluminum layer.
  • the shape of the conductive region 3 is set as a curved conductive layer 4 for setting a curved shape. Because the curved shape has a buffering effect, while improving the stretching effect of the stretching electrode, the electronic device in the electronic device integration area is avoided. Damage.
  • the stretching electrode includes a substrate 1 and a conductive region 3 and an electronic device integration region 2.
  • the conductive region 3 and the electronic device integration region 2 are both formed on the substrate 1, and the conductive region 3 has an overlap with the device integration region 2.
  • Area, the shape of the conductive area 3 is curved, and a conductive layer 4 is disposed therein, and the conductive layer 4 is arranged in a curved shape in the conductive area.
  • the electronic device made by the above-mentioned stretched electrode adopts a free-standing stretchable structure composed of a substrate 1 and a patterned metal (such as a conductive layer 4 arranged in a curved shape in the conductive region 3), which can be integrated as a whole.
  • the stretching electrode has high integration and strong flexibility, and can change the design shape of the conductive layer 4 (such as a wire) and the substrate shape of the binding position of the electronic device body 5 as needed. It can integrate electronic devices with a size of several hundred microns.
  • the conductive region 3 and the electronic device integration region 2 are only formed on a region defined on the substrate 1 and do not damage or affect the structure of the substrate 1.
  • the conductive layer is a metal wire, and the width of the metal wire is equal to the width of the conductive region.
  • the conductive layer is set as a metal wire, which can achieve the purposes of convenient arrangement and as much integration as possible in a limited size.
  • the width of the metal wire is smaller than the width of the substrate 1, which is beneficial to the packaging of the metal wire and prevents oxidation of the side wall of the metal wire.
  • the metal wire includes a straight section 3-1 and a curved section 3-2, and a plurality of wires are arranged between the adjacent straight sections 3-1.
  • the curved section 3-2 is described, and the curved section 3-2 includes at least one U-shaped structure.
  • the electronic device integration region 2 is located at the intersection of two straight line segments 3-1 of the two metal wires.
  • the two straight sections at the intersection are made of the same metal, such as copper.
  • the metal wire and the metal wire at the connection point of the electronic device use the same metal, such as copper.
  • the metal wire and the metal wire at the connection point of the electronic device are made on the same layer and patterned at the same time.
  • the metal wire at the connection point is a straight line
  • the metal wire between the electronic devices is U-shaped
  • two adjacent U-shaped protrusions The directions are opposite, which can ensure that the electronic device is uniformly stressed during stretching, which is beneficial to improving the stretching performance.
  • the electronic device connection points and metal wires are patterned, and the link area of the electronic device is set to a square shape.
  • the overall structure can be stretched, and the non-stretchable area has a compact structure and a small area ratio.
  • the electronic device integration region 2 is entirely formed on the substrate 1, and only a part of the conductive region 3 is formed on the substrate 1. More specifically, a partial region of the conductive region 3 formed on the substrate 1 is an overlapping region of the conductive region 3 and the electronic device integration region 2.
  • This embodiment provides a stretching electrode.
  • the stretching electrode is also The insulating layer is provided on the conductive layer 4 and covers the conductive layer 4.
  • the insulating layer is provided with several soldering vias; a pad is formed on the insulating layer and fills the soldering vias and communicates with the soldering vias.
  • the conductive layers are connected.
  • the insulating layer covers the conductive layer 4 to protect the conductive layer 4.
  • the thickness of the insulating layer in communication with the conductive layer 4 is selected according to need, and generally the thickness is equivalent to the thickness of the conductive layer 4.
  • the pad is used for soldering the conductive layer 4 and an electronic device together. Further, the pad is a Sn layer, an In layer, or an Au layer.
  • the stretched electrode further includes a substrate, and the substrate 1 is disposed on the substrate.
  • the substrate may be a glass substrate.
  • the electronic device integration area 2 is a first groove provided on the substrate 1, and the conductive area 3 is a A curved second groove, the second groove intersects the first groove, and a groove bottom of the second groove is lower than a groove bottom of the first groove.
  • the metal wires are arranged in the second groove, and the electronic device is located in the first groove and above the metal wires.
  • the shape of the electronic device integration region 2 is a circular shape or an oval shape.
  • the electronic device integration area 2 is entirely formed on the substrate 1, and the conductive area 3 is also completely formed on the substrate 1. That is, the substrate 1 is a single piece sufficient to form all the electronic device integration areas 2 and conductive. Substrate for region 3. More specifically, in order to save the substrate 1, a polyimide substrate is provided under the metal wires along the arrangement direction of the metal guide, and the metal wires are located on the polyimide substrate.
  • This embodiment provides an electronic device.
  • the electronic device body 5 is integrated in the electronic device integration area 2 using the stretching electrodes in the above embodiment, and the electronic device body 5 and The conductive layer 4 is in contact.
  • the electronic device body is a photoelectric device or a sensor, such as a sensor chip, an LED, or a Micro LED.
  • the electronic device further includes a first elastic layer 11, a second elastic layer 12 and a third elastic layer 6.
  • a plurality of second elastic layers 12 are disposed in the same plane on the first elastic layer 11, and the sizes of the first elastic layer 11 and the second elastic layer 12 are different.
  • the size of the first elastic layer is larger than that of the second elastic layer 12. size.
  • the second elastic layer 12 is provided corresponding to one electronic device or multiple electronic devices.
  • the third elastic layer 6 may contact the first elastic layer 11 through the gaps between the second elastic layers 12 to encapsulate the electronic device.
  • Ontology 5 The third elastic layer 6 may contact the first elastic layer 11 through the gaps between the second elastic layers 12 to encapsulate the electronic device.
  • the elastic modulus of the second elastic layer 12 is smaller than that of the first elastic layer 11; the third elastic layer 6 covers the electronic device body 5, and the first elastic layer 11 covers On the side of the second elastic layer 12 remote from the electronic device body 5, and the first elastic layer 11 and the third elastic layer 6 are in contact with each other to encapsulate the electronic device body 5.
  • the thickness of the first elastic layer 11 is 50 ⁇ m-500 ⁇ m.
  • the thickness of the second elastic layer 12 is 5 ⁇ m to 30 ⁇ m.
  • the first elastic layer 11 and the third elastic layer 6 are thermoplastic polyurethane elastomer (TPU) or silicone rubber.
  • the second elastic layer 12 is any one of polyimide (PI), polycarbonate (PC), polymethyl methacrylate (PMMA), and polyethylene terephthalate (PET).
  • PI polyimide
  • PC polycarbonate
  • PMMA polymethyl methacrylate
  • PET polyethylene terephthalate
  • this application provides a specific method for manufacturing an electronic device. As shown in FIG. 4, the method includes the following steps:
  • the substrate 1 includes a first elastic layer 11 and a second elastic layer 12.
  • the second elastic layer 12 is placed on the first elastic layer 11, and the elastic modulus of the second elastic layer 12 Less than the elastic modulus of the first elastic layer 11.
  • the photoresist layer is peeled off, so that the metal layer is patterned.
  • the shape of the conductive region 3 formed in S15 is a curved shape, and a conductive layer 4 is disposed therein, and the conductive layer 4 is arranged in a curved shape in the conductive region 3.
  • the method for manufacturing the electronic device includes:
  • the glass substrate is processed to form a transition layer that is convenient for laser peeling or mechanical peeling.
  • metal can be deposited first and then patterned or lifted off.
  • the metal thickness is 100nm-2um.
  • the substrate is patterned to form a wire area and an electronic device integration area, preferably laser processing; an insulating layer can also be formed over the metal to help protect metal lines.
  • Welding devices Metal materials that can be used for welding can be selectively produced under the welding devices, which can be Sn, In, Au, etc.
  • the devices can be optoelectronic devices or sensor devices.
  • An elastic material is formed above the device, which can be selected from pouring, knife coating, spin coating, etc.
  • the elastic material can be TPU, PDMS, etc.
  • the substrate may be peeled off, which may be laser peeling or mechanical peeling.
  • An elastic material is formed on the reverse side, and the thickness of the elastic material is 50um-500um.
  • the preparation process is simple, and the entire electronic device is wrapped by an elastic material.
  • the elastic material may be a thermoplastic polyurethane elastomer, a silicon rubber, etc., and the wires are not easy to be damaged, and the integrated structure of the electronic device shown in FIG. 3 is finally obtained.

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Abstract

一种拉伸电极、电子器件及其制备方法。该拉伸电极包括衬底（1）、导电区域（3）和电子器件集成区域（2）；该衬底（1）包括第一弹性层（11）及第二弹性层（12），该两层弹性层的弹性模量不同。该拉伸电极制得的电子器件，整体可拉伸，拉伸时电子器件不损坏，拉伸阻抗变化小，可实现导电层拉伸大于20％，电阻变化率小于1.5％，电子器件无损坏。

Description

拉伸电极、电子器件及其制备方法 技术领域
本申请属于电子器件技术领域，具体涉及一种拉伸电极及电子器件。
背景技术
随着柔性电子器件的发展，不同的应用场景对显示技术提出了新的特性需求，其中可拉伸显示技术以及柔性传感技术均是当前研究的热点。由于在柔性电子器件中存在既要实现柔性拉伸同时又要集成功能器件的需求，而功能器件是无法拉伸和弯折的。
申请内容
本申请所要解决的技术问题是现有柔性电子器件制备过程中存在拉伸性能差及电性稳定性低的缺陷，从而提供一种拉伸电极及电子器件。
为解决上述技术问题，本申请采用的技术方案如下：
本申请所提供的拉伸电极，包括，
衬底，包括第一弹性层及第二弹性层，所述第二弹性层置于所述第一弹性层上，并且所述第二弹性层的弹性模量小于所述第一弹性层的弹性模量；
导电区域，成型于所述第二弹性层远离所述第一弹性层一侧；
电子器件集成区域，成型于所述第二弹性层远离所述第一弹性层一侧。
可选地，所述导电区域的形状呈曲线型，其内设置导电层，且所述导电层呈曲线型排布于所述导电区域内。
可选地，所述第二弹性层的材料包括聚酰亚胺(PI)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、以及聚对苯二甲酸乙二醇酯(PET)中的至 少一种。
可选地，所述第二弹性层的厚度为5μm-30μm。
可选地，所述导电层为金属导线，所述金属导线的宽度与所述导电区域的宽度相等。
可选地，所述金属导线包括直线段和曲线段，所述曲线段连接在相邻所述直线段间，所述曲线段包括至少一个U型结构。
可选地，所述曲线段包括两个或两个以上U型结构时，相邻两个U型的凸起方向相反。
可选地，所述导电层的厚度为100nm-2μm。
可选地，还包括绝缘层，设置于所述导电层上，且覆盖所述导电层，所述绝缘层上设置若干焊接通孔；焊盘，形成在所述绝缘层上，并填充所述焊接通孔与所述导电层相连。
可选地，所述导电区域和所述电子器件集成区域均成型于所述衬底上，且所述导电区域具有与所述电子器件集成区域重叠的区域。
可选地，所述导电区域的部分区域成型于所述衬底上，所述电子器件集成区域全部成型于所述衬底上。
可选地，成型于所述衬底上的导电区域的部分区域为所述导电区域与电子器件集成区域的重叠区域。
可选地，所述电子器件集成区域为设置于所述衬底上的第一凹槽，所述导电区域为呈曲线型的第二凹槽，所述第二凹槽与所述第一凹槽相交，且所述第二凹槽的槽底低于所述第一凹槽的槽底。
可选地，所述金属导线的宽度小于所述衬底的宽度。
可选地，所述电子器件集成区域位于两条所述金属导线彼此的直线段交汇处。
可选地，所述交汇处的两直线段采用同一种金属。
可选地，所述电子器件集成区域的形状为方型。
可选地，所述导电层为金属导电层。
可选地，所述金属导电层为铜层、钛铜层、金层或铝层等。
可选地，焊盘为Sn层、In层或Au层等。
此外，本申请还提供了一种电子器件，包括上述拉伸电极。
可选地，所述导电区域的形状呈曲线型，其内设置导电层，且所述导电层呈曲线型排布于所述导电区域内。
可选地，电子器件本体集成于所述电子器件集成区域内，且所述电子器件本体与所述导电层接触，所述电子器件还包括，第三弹性层，所述第三弹性层覆盖于所述电子器件本体上，且所述第一弹性层或第二弹性层和第三弹性层彼此接触，以封装所述电子器件本体。
可选地，所述电子器件本体为光电器件或传感器。
可选地，所述电子器件本体为传感器芯片、LED或Micro LED。
可选地，所述第三弹性层的厚度为50μm-500μm。
可选地，所述第一弹性层和第三弹性层为热塑性聚氨酯弹性体(TPU)或硅橡胶等。
本申请还提供了一种电子器件的制备方法，包括以下步骤：
提供衬底；所述衬底包括第一弹性层及第二弹性层，所述第二弹性层置于所述第一弹性层上，并且所述第二弹性层的弹性模量小于所述第一弹 性层的弹性模量；
在所述衬底上涂布光阻层，并曝光显影图形化；
沉积金属层；
剥离所述光阻层，以使得所述金属层形成图形；
对所述衬底进行图形化，形成导线区域和电子器件集成器件区域；其中，所述导电区域和所述电子器件集成区域均成型于所述第二弹性层远离所述第一弹性层一侧。
可选地，所述导电区域的形状呈曲线型，其内设置导电层，且所述导电层呈曲线型排布于所述导电区域内。
本申请提供的技术方案，具有如下优点：
通过设置拉伸电极，其包括衬底，包括第一弹性层及第二弹性层，所述第二弹性层置于所述第一弹性层上，并且所述第二弹性层的弹性模量小于所述第一弹性层的弹性模量；导电区域，成型于所述第二弹性层远离所述第一弹性层一侧；电子器件集成区域，成型于所述第二弹性层远离所述第一弹性层一侧。上述技术方案提供的拉伸电极在拉伸过程中，由于第二弹性层的弹性模量小于第一弹性层的弹性模量，那么第二弹性层的变形相对于第一弹性层的变形较小，从而不易损坏电子器件集成区域内的电子器件，以保证该拉伸电极的电性稳定性较高；同时，由于第一弹性层的变形相对于第二弹性层的变形较大，使得该拉伸电极具有较好的拉伸性。
通过设置导电区域的形状呈曲线型，其内设置导电层，且导电层呈曲线型排布于导电区域内。其中，导电区域的形状设置为曲线型为用于设置曲线型的导电层，由于曲线型具有缓冲的作用，在提高该拉伸电极拉伸效 果的同时，避免电子器件集成区域内电子器件的损坏。因此，该拉伸电极能保证电子器件整体可拉伸，拉伸时电子器件不损坏，拉伸阻抗变化小，经测试，可实现导电层拉伸大于20％，电阻变化率小于1.5％，电子器件无损坏。
通过将导电区域和电子器件集成区域均成型于衬底上划定的区域，并不会破坏或影响衬底的结构。
通过将金属导线的宽度设置为小于衬底的宽度，这样有利于金属导线的封装，防止金属导线侧壁氧化。
通过如下设置，即所述金属导线包括直线段和曲线段，所述曲线段连接在相邻所述直线段间，所述曲线段包括至少一个U型结构，或者，当所述曲线段包括两个或两个以上U型结构时，相邻两个U型的凸起方向相反。所述电子器件集成区域位于两条所述金属导线彼此的直线段交汇处，同时，交汇处的两直线段采用同一种金属，例如采用铜。金属导线和电子器件连接点处的金属导线使用同一种金属，例如铜，制作在同一层，同时图形化，其连接点处的金属导线为直线，电子器件之间的金属导线为U型或马蹄型曲线，从而能保证电子器件在拉伸时，受力均匀，有利于提高拉伸性能。
电子器件连接点和导线进行图形化，电子器件的链接区域设置为方型，整体结构可以拉伸，不可拉伸区域结构紧凑，面积占比小。
通过在导电层上设置覆盖所述导电层的绝缘层，用于保护导电层。
附图说明
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍， 显而易见地，下面描述中的附图是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例中电子器件的结构示意图；
图2为图1中A处的横截面结构示意图；
图3为本申请实施例中电子器件的集成结构图；
图4为本申请实施例中电子器件的制备方法流程图；
附图标记：
1-衬底；11-第一弹性层；12-第二弹性层；2-电子器件集成区域；3-导电区域；3-1-直线段；3-2-曲线段；4-导电层；5-电子器件本体；6-第三弹性层。
具体实施方式
下面对本申请的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
此外，下面所描述的本申请不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
基于在柔性电子器件制备过程中就会面临存在空间尺寸有限，同时需要在集成不可变形的功能器件基础上实现拉伸功能的问题以及由于集成了电子器件，在整体拉伸变形时电子器件对电学性能的阻抗变化要求要小的问题。本申请提供了拉伸电极及电子器件，具体的实施方式如下：
实施例1
本实施例提供了一种拉伸电极，如图1和2所示，包括衬底1及导电区域3和电子器件集成区域2，衬底1可以是两层材料构成，且两层材料的刚性不同。其中，靠近导电区域3的一层是第二弹性层12，该第二弹性层12由弹性形变较小即刚性较大的材料制成，例如为聚酰亚胺(PI)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、以及聚对苯二甲酸乙二醇酯(PET)中的至少一种，优选为聚酰亚胺。衬底1中远离导电区域3的一层是第一弹性层11，该第一弹性层11是由弹性形变较大即刚性较小的材料制成，例如为热塑性聚氨酯弹性体(TPU)或硅橡胶等。
拉伸电极在拉伸过程中，由于第二弹性层的弹性模量小于第一弹性层的弹性模量，那么第二弹性层的变形相对于第一弹性层的变形较小，从而不易损坏电子器件集成区域内的电子器件，以保证该拉伸电极的电性稳定性较高；同时，由于第一弹性层的变形相对于第二弹性层的变形较大，使得该拉伸电极具有较好的拉伸性。
作为一种可选的实施方式，第二弹性层的厚度为5μm-30μm，例如可为10μm、15μm、20μm、25μm。导电区域3和电子器件集成区域2均成型于衬底1上，且导电区域3具有与电子器件集成区域2重叠的区域。其中，可以是导电区域3的部分区域与电子器件集成区域2重叠，也可以是导电区域3与电子器件集成区域2全部重叠。具体地，导电区域3可为方型导电区域。
进一步可选地，导电区域3的形状呈曲线型，其内设置导电层4，且导电层4呈曲线型排布于导电区域3内。具体地，导电层4为金属导电层， 金属导电层的厚度为100nm-2μm，例如可为200nm、500nm、800nm、1μm、1.5μm等。该金属导电层为铜层、钛铜层、金层或铝层等。其中，导电区域3的形状设置为曲线型为用于设置曲线型的导电层4，由于曲线型具有缓冲的作用，在提高该拉伸电极拉伸效果的同时，避免电子器件集成区域内电子器件的损坏。
该拉伸电极包括衬底1及导电区域3和电子器件集成区域2，该导电区域3和电子器件集成区域2均成型于衬底1上，且导电区域3具有与所述器件集成区域2重叠的区域，该导电区域3的形状呈曲线型，其内设置导电层4，且所述导电层4呈曲线型排布于所述导电区域内。上述拉伸电极制得的电子器件，通过采用衬底1与图形化的金属(如呈曲线型排布于导电区域3内的导电层4)共同组成的独立式的可拉伸结构，整体可拉伸，拉伸时电子器件不损坏，拉伸阻抗变化小，经测试，可实现导电层拉伸大于20％，电阻变化率小于1.5％，电子器件无损坏。同时，如图1和2所示，该拉伸电极集成度高，灵活性强，可根据需要改变导电层4(如导线)的设计形状和电子器件本体5的绑定位置的衬底形状，即可集成大小为几百微米的电子器件。
具体地，在本实施例中，导电区域3和电子器件集成区域2只是成型于衬底1上划定的区域，并不会破坏或影响衬底1的结构。
实施例2
本实施例提供了一种拉伸电极，在上述实施例1的基础上，导电层为金属导线，且所述金属导线的宽度与所述导电区域的宽度相等。其中，将导电层设置为金属导线，能够实现方便排布和在有限的尺寸上尽可能提高 集成度的目的。
可选地，所述金属导线的宽度小于所述衬底1的宽度，这样有利于金属导线的封装，防止金属导线侧壁氧化。
实施例3
本实施例提供了一种拉伸电极，在上述实施例2的基础上，所述金属导线包括直线段3-1和曲线段3-2，相邻所述直线段3-1间设置若干所述曲线段3-2，所述曲线段3-2包括至少一个U型结构。其中，当所述曲线段3-2包括两个或两个以上U型结构时，相邻两个U型的凸起方向相反。如图1所示，电子器件集成区域2位于两条所述金属导线彼此的直线段3-1交汇处。同时，交汇处的两直线段采用同一种金属，例如采用铜。
通过上述设置，也即金属导线和电子器件连接点处的金属导线使用同一种金属，例如铜。将金属导线和电子器件连接点处的金属导线制作在同一层，同时图形化，连接点处的金属导线为直线，电子器件之间的金属导线为U型，相邻两个U型的凸起方向相反，从而能保证电子器件在拉伸时，受力均匀，有利于提高拉伸性能。
同时，电子器件连接点和金属导线进行图形化，电子器件的链接区域设置为方型，整体结构可以拉伸，不可拉伸区域结构紧凑，面积占比小。
进一步地，电子器件集成区域2全部成型于衬底1上，而导电区域3仅仅部分区域成型于衬底1上。更具体地，成型于衬底1上的导电区域3部分区域为导电区域3与电子器件集成区域2的重叠区域。
实施例4
本实施例提供了一种拉伸电极，在上述实施例1、2或3的基础上，为 了保护导电层4，例如金属导线，同时将电子器件集成于衬底1上，该拉伸电极还包括绝缘层，设置于导电层4上，且覆盖所述导电层4，所述绝缘层上设置若干焊接通孔；焊盘，形成在所述绝缘层上，填充所述焊接通孔并与所述导电层相连。
其中，绝缘层覆盖在导电层4上，用以保护所述导电层4。与所述导电层4连通的绝缘层的厚度根据需要选择，一般厚度与导电层4的厚度相当即可。所述焊盘用于将所述导电层4与电子器件焊接在一起。进一步地，焊盘为Sn层、In层或Au层等。
进一步地，该拉伸电极还包括基板，所述衬底1设置于所述基板上。其中，基板可为玻璃基板。
实施例5
本实施例提供了一种拉伸电极，作为上述实施例1、2、3或4的变形实施方式，电子器件集成区域2为设置于衬底1上的第一凹槽，导电区域3为呈曲线型的第二凹槽，所述第二凹槽与所述第一凹槽相交，且所述第二凹槽的槽底低于所述第一凹槽的槽底。这样金属导线排布于第二凹槽内，电子器件位于第一凹槽内且位于金属导线上方。
在本实施例中，所述电子器件集成区域2的形状为圆型或者椭圆型。
在本实施例中，电子器件集成区域2全部成型于衬底1上，导电区域3也全部成型于衬底1上；也即衬底1为一整块足以成型全部电子器件集成区域2和导电区域3的衬底。更具体地，为了节省衬底1，沿金属导向的排布方向，在金属导线下方设置聚酰亚胺衬底，并使金属导线位于聚酰亚胺衬底上。
实施例6
本实施例提供了一种电子器件，如图3所示，采用上述实施例中的拉伸电极，电子器件本体5集成于所述电子器件集成区域2内，且所述电子器件本体5与所述导电层4接触。可选地，电子器件本体为光电器件或传感器，例如为传感器芯片、LED或Micro LED。
进一步地，该电子器件还包括第一弹性层11，第二弹性层12和第三弹性层6。在第一弹性层11上同一平面内设置有若干个第二弹性层12，且第一弹性层11和第二弹性层12的尺寸不等，第一弹性层的尺寸大于第二弹性层12的尺寸。第二弹性层12对应于一个电子器件或多个电子器件设置，此时，第三弹性层6可以通过若干个第二弹性层12的间隙与第一弹性层11接触，以封装所述电子器件本体5。并且所述第二弹性层12的弹性模量小于所述第一弹性层11的弹性模量；所述第三弹性层6覆盖于所述电子器件本体5上，所述第一弹性层11覆盖于所述第二弹性层12远离所述电子器件本体5的一侧上，且所述第一弹性层11和第三弹性层6彼此接触，以封装所述电子器件本体5。
可选地，所述第一弹性层11的厚度为50μm-500μm。
所述第二弹性层12的厚度为5μm-30μm。
可选地，所述第一弹性层11和第三弹性层6为热塑性聚氨酯弹性体(TPU)或硅橡胶等。
可选地，第二弹性层12为聚酰亚胺(PI)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、以及聚对苯二甲酸乙二醇酯(PET)的任意一种。
此外，本申请提供了电子器件的一种具体的制备方法，如图4所示， 包括如下步骤：
S11，提供衬底。
其中，所述衬底1包括第一弹性层11及第二弹性层12，所述第二弹性层12置于所述第一弹性层11上，并且所述第二弹性层12的弹性模量小于所述第一弹性层11的弹性模量。
S12，在所述衬底上涂布光阻层，并曝光显影图形化。
S13，沉积金属层。
S14，剥离所述光阻层，以使得所述金属层形成图形。
S15，对所述衬底进行图形化，形成导线区域和电子器件集成器件区域；其中，所述导电区域3和所述电子器件集成区域2均成型于所述第二弹性层12远离所述第一弹性层一侧。
作为本实施例的一种可选实施方式，在S15中形成的导电区域3的形状呈曲线型，其内设置导电层4，且导电层4呈曲线型排布于导电区域3内。
作为本实施例的一种具体实施方式，该电子器件的制备方法包括：
1)准备玻璃基板。
2)玻璃基板进行处理，形成便于激光剥离或者机械剥离的过渡层。
3)涂布可剥离衬底，优选PI，厚度5-30um。
4)涂布光阻，曝光显影图形化。
5)沉积金属，此处可以是先沉积金属再图形化或者采用lift off工艺都可以，金属厚度100nm-2um。
6)光阻剥离，金属形成图形。
7)衬底进行图形化，形成导线区域和电子器件集成区域，优选激光处 理；也可以在金属上方形成绝缘层，利于保护金属线路。
8)焊接器件，可以在需要焊接器件的下方选择性制作利于焊接的金属材料，可以是Sn，In，Au等，器件可以是光电器件或者传感器件。
9)器件上方形成弹性材料，可以选择浇筑，刮涂，旋涂等方式，弹性材料可以是TPU，PDMS等。
10)剥离衬底，可以是激光剥离或者机械剥离。
11)反面形成弹性材料，弹性材料厚度50um-500um。
该制备工艺简单，电子器件整体由弹性材料包裹，弹性材料可以是热塑性聚氨酯弹性体，硅橡胶等，导线不容易损坏，最终得到如图3所示的电子器件的集成结构。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本申请创造的保护范围之中。

Claims (20)

  1. 一种拉伸电极，包括：
    衬底，包括第一弹性层及第二弹性层，所述第二弹性层置于所述第一弹性层上，并且所述第二弹性层的弹性模量小于所述第一弹性层的弹性模量；
    导电区域，成型于所述第二弹性层远离所述第一弹性层一侧；
    电子器件集成区域，成型于所述第二弹性层远离所述第一弹性层一侧。
  2. 根据权利要求1所述的拉伸电极，其中，所述导电区域的形状呈曲线型，其内设置导电层，且所述导电层呈曲线型排布于所述导电区域内。
  3. 根据权利要求2所述的拉伸电极，其中，所述第二弹性层的材料包括聚酰亚胺(PI)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、以及聚对苯二甲酸乙二醇酯(PET)中的至少一种。
  4. 根据权利要求3所述的拉伸电极，其中，所述第二弹性层的厚度为5μm-30μm。
  5. 根据权利要求3所述的拉伸电极，其中，所述导电层为金属导线，所述金属导线的宽度与所述导电区域的宽度相等。
  6. 根据权利要求5所述的拉伸电极，其中，所述金属导线包括直线段和曲线段，所述曲线段连接在相邻所述直线段间，所述曲线段包括至少一个U型结构。
  7. 根据权利要求6所述的拉伸电极，其中，当所述曲线段包括两个或两个以上U型结构时，相邻两个U型结构的凸起方向相反。
  8. 根据权利要求5所述的拉伸电极，其中，所述导电层的厚度为100nm-2μm。
  9. 根据权利要求1所述的拉伸电极，还包括：
    绝缘层，设置于所述导电层上，且覆盖所述导电层，所述绝缘层上设置若干焊接通孔；
    焊盘，形成在所述绝缘层上，并填充所述焊接通孔与所述导电层相连。
  10. 根据权利要求2所述的拉伸电极，其中，所述导电区域和所述电子器件集成区域均成型于所述衬底上，且所述导电区域具有与所述电子器件集成区域重叠的区域。
  11. 根据权利要求2所述的拉伸电极，其中，所述导电区域的部分区域成型于所述衬底上，所述电子器件集成区域全部成型于所述衬底上。
  12. 根据权利要求11所述的拉伸电极，其中，成型于所述衬底上的导电区域的部分区域为所述导电区域与电子器件集成区域的重叠区域。
  13. 根据权利要求2所述的拉伸电极，其中，所述电子器件集成区域为设置于所述衬底上的第一凹槽，所述导电区域为呈曲线型的第二凹槽，所述第二凹槽与所述第一凹槽相交，且所述第二凹槽的槽底低于所述第一凹槽的槽底。
  14. 根据权利要求5所述的拉伸电极，其中，所述金属导线的宽度小于所述衬底的宽度。
  15. 根据权利要求6所述的拉伸电极，其中，所述电子器件集成区域位于两条所述金属导线彼此的直线段交汇处。
  16. 根据权利要求15所述的拉伸电极，其中，所述交汇处的两直线段采用同一种金属。
  17. 一种电子器件，包括权利要求1所述的拉伸电极。
  18. 根据权利要求17所述的电子器件，其中，所述导电区域的形状呈曲线型，其内设置导电层，且所述导电层呈曲线型排布于所述导电区域内。
  19. 根据权利要求18所述的电子器件，其中，电子器件本体集成于所述电子器件集成区域内，且所述电子器件本体与所述导电层接触，所述电子器件还包括，
    第三弹性层，所述第三弹性层覆盖于所述电子器件本体上，且所述第一弹性层或第二弹性层和第三弹性层彼此接触，以封装所述电子器件本体。
  20. 一种电子器件的制备方法，包括如下步骤：
    提供衬底；所述衬底包括第一弹性层及第二弹性层，所述第二弹性层置于所述第一弹性层上，并且所述第二弹性层的弹性模量小于所述第一弹性层的弹性模量；
    在所述衬底上涂布光阻层，并曝光显影图形化；
    沉积金属层；
    剥离所述光阻层，以使得所述金属层形成图形；
    对所述衬底进行图形化，形成导线区域和电子器件集成器件区域；其中，所述导电区域和所述电子器件集成区域均成型于所述第二弹性层远离所述第一弹性层一侧。
PCT/CN2019/079736 2018-09-19 2019-03-26 拉伸电极、电子器件及其制备方法 WO2020057085A1 (zh)

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