WO2020051986A1 - 一种显示面板及其制造方法 - Google Patents

一种显示面板及其制造方法 Download PDF

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Publication number
WO2020051986A1
WO2020051986A1 PCT/CN2018/111309 CN2018111309W WO2020051986A1 WO 2020051986 A1 WO2020051986 A1 WO 2020051986A1 CN 2018111309 W CN2018111309 W CN 2018111309W WO 2020051986 A1 WO2020051986 A1 WO 2020051986A1
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WIPO (PCT)
Prior art keywords
protective layer
metal layer
electrical contact
layer
display panel
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Ceased
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PCT/CN2018/111309
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English (en)
French (fr)
Inventor
黄北洲
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HKC Co Ltd
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HKC Co Ltd
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Priority to US16/313,136 priority Critical patent/US20210225895A1/en
Publication of WO2020051986A1 publication Critical patent/WO2020051986A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • the present application relates to the field of display technology, and more particularly, to a display panel and a manufacturing method thereof.
  • the liquid crystal display has many advantages such as a thin body, power saving, and no radiation, and has been widely used.
  • Most of the liquid crystal displays on the market are backlit liquid crystal displays, which include a liquid crystal panel and a backlight module.
  • the working principle of a liquid crystal panel is to place liquid crystal molecules in two parallel glass substrates, and apply a driving voltage to the two glass substrates to control the rotation direction of the liquid crystal molecules so as to refract the light of the backlight module to generate a picture.
  • the anode is usually combined with an electrode layer (ITO) and silver (Ag) structure
  • the signal input wire is usually metal aluminum (Al)
  • the anode pattern etching is usually performed by acid wet etching.
  • the acid liquid due to the potential energy of Ag and Al, Differential chemical reactions occur: Ag + + Al ⁇ Al + + Ag, which causes corrosion of both ends of the aluminum (Al) wire and precipitation of silver (Ag).
  • What the present application is to solve is to provide a display panel that prevents corrosion of aluminum sides and a manufacturing method thereof.
  • a display panel includes:
  • a metal layer provided on the first substrate
  • the metal layer includes an electrical contact area and is electrically connected to a corresponding conductive component
  • a protective layer covering the metal layer to avoid the electrical contact area.
  • a display panel includes: a first substrate, a metal layer, and a protective layer; a metal layer, the metal layer being disposed on the first substrate; the metal layer includes an electrical contact area, and communicates with a corresponding conductive component Connection; protective layer; covering the metal layer to avoid the electrical contact area; the protective layer includes a first protective layer and a second protective layer; the electrical contact area sets an upper surface of the metal layer and has a width smaller than that The width of the metal layer; the first protective layer and the second protective layer are respectively provided at both ends of the metal layer, and a part of the protective layers of the first protective layer and the second protective layer cover the upper surface of the metal layer, corresponding to the metal layer End positions.
  • the protective layer is made of the same material as the planarization layer, and the metal layer includes aluminum.
  • the application also discloses a method for manufacturing a display panel.
  • a method for manufacturing a display panel, the method steps include:
  • the metal layer includes an electrical contact area and is electrically connected to a corresponding conductive component; the protective layer avoids the electrical contact area.
  • the protective layer is on the metal layer.
  • the metal layer has a certain thickness of protective layer to protect it, which can effectively avoid being corroded, thereby reducing the corrosion of the circuit, avoiding excessive resistance, shorting the circuit and opening the circuit. As a result, the display quality is degraded. Since the protective layer covers the non-electrical contact area of the metal layer, the electrical connection effect of the metal layer will not be affected.
  • FIG. 1 is a schematic diagram of an overall structure of one embodiment of the present application.
  • FIG. 2 is a schematic diagram of an overall structure of one embodiment of the present application.
  • FIG. 3 is a schematic top view of a structure of one embodiment of the present application.
  • FIG. 5 is a schematic diagram of method steps in one embodiment of the present application.
  • an embodiment of the present application discloses a display panel 1.
  • the first substrate 2, the metal layer 3, and the protective layer 5; the metal layer 3, the metal layer 3 is provided on the first substrate 2; the metal layer 3 includes an electrical contact area 4, which is electrically connected to the corresponding conductive component; the protective layer 5; covering In the metal layer 3, avoid the electric contact area 4; the protective layer 5 includes a first protective layer 8 and a second protective layer 9; the electric contact area 4 is provided with an upper surface of the metal layer 3, and the width is smaller than the width of the metal layer 3; the first protection The layer 8 and the second protective layer 9 are respectively provided at both ends of the metal layer 3, and a part of the protective layers of the first protective layer 8 and the second protective layer 9 cover the upper surface of the metal layer 3, corresponding to the two ends of the electrical contact area 4. ⁇ ⁇ Department location.
  • the protective layer 5 is made of the same material as the planarization layer, and the metal layer includes aluminum.
  • a display panel 1 is disclosed.
  • the display panel 1 includes: a first substrate 2, a metal layer 3, and a protective layer 5; a metal layer 3, and the metal layer 3 is disposed on the first substrate 2; the metal layer 3 includes an electrical contact area 4 and is electrically connected to a corresponding conductive member; Protective layer 5; covering the metal layer 3 and avoiding the electric contact area 4.
  • the protective layer 5 is on the metal layer 3.
  • the metal layer 3 has a certain thickness of the protective layer 5 for protection, which can effectively prevent corrosion, thereby reducing corrosion of its circuit, avoiding excessive resistance and short circuit. As a result, the circuit is cut off, causing the display quality to deteriorate. Since the protective layer 5 covers the non-electrical contact region 4 of the metal layer 3, the electrical connection effect of the metal layer 3 will not be affected.
  • the protective layer 5 includes a first protective layer 8 and a second protective layer 9;
  • the electrical contact area 4 is provided with the upper surface of the metal layer 3, and the width is smaller than the width of the metal layer 3.
  • the first protective layer 8 and the second protective layer 9 are respectively provided at both ends of the metal layer 3, and the first protective layer 8 and the second Part of the protective layer of the protective layer 9 covers the upper surface of the metal layer 3, corresponding to the positions of the two ends of the electrical contact region 4.
  • the exposed portion of the metal layer 3 is protected to a more comprehensive level.
  • the protective layer 5 includes a third protective layer 10 and a fourth protective layer 11;
  • the electrical contact region 4 is provided with the upper surface of the metal layer 3, and the width is smaller than the width of the metal layer 3; the third protective layer 10 and the fourth protective layer 11 are respectively provided at two ends of the metal layer 3.
  • the two ends of the metal layer 3 are covered to ensure that the sides are not corroded, the electrical connection of the electrical contact area 4 is performed more thoroughly, the electrical connection with the corresponding conductive parts is more fully, and the effect of electricity is better.
  • the protective layer 5 is made of the same material as the planarization layer.
  • the texture is good and has a certain thickness to avoid being corroded. At the same time, the thickness will not affect the surface contact effect of the metal layer 3 after the electrical connection.
  • the metal layer includes aluminum.
  • Good conductivity save cost, easy to manufacture, and can also be copper, silver and other materials with good conductivity.
  • FIG. 4 a method for manufacturing the display panel 1 is disclosed.
  • the manufacturing method of the display panel 1 includes:
  • the metal layer 3 includes an electrical contact region 4 and is electrically connected to a corresponding conductive component; the protective layer 5 avoids the electrical contact region 4.
  • the protective layer 5 is on the metal layer 3.
  • the metal layer 3 has a certain thickness of the protective layer 5 for protection, which can effectively prevent corrosion, thereby reducing corrosion of its circuit, avoiding excessive resistance and short circuit. As a result, the circuit is cut off, causing the display quality to deteriorate. Since the protective layer 5 covers the non-electrical contact area 4 of the metal layer 3, the electrical connection effect of the metal layer 3 will not be affected, labor saving, and processing simple.
  • This embodiment is optional, as shown in FIG. 5
  • the light transmittance of the semi-transparent mask plate corresponding to the electrical contact region 4 is greater than the light transmittance of the corresponding protective layer 5 region.
  • the translucent mask includes: a fully transparent area 12; the fully transparent area 12 corresponds to the electrical contact area 4 of the metal layer 3; and the semi-transparent area 12 is on the same line as the fully transparent area 12 and corresponds to a metal Both ends of layer 3.
  • the protected area is selected, the primary and secondary protection, without increasing the process, the protection range is guaranteed, and the protection is more effective. Without increasing the process, a certain thickness can be retained to prevent metal layers during etching The side of 3 is corroded and a short circuit occurs, which affects the effect of electrical connection.
  • the light transmittance at both ends of the electrical contact area 4 is 20-30%, and the transmittance of the electrical contact area 4 is 100%.
  • the protective layer 5 at both ends after exposure and development guarantees a certain thickness at both ends of the metal layer 3, with a certain thickness, it will protect the metal layer from being corroded by the edge material during etching, affecting the electrical contact area 4 This results in increased resistance and short circuit.
  • the protective layer 5 includes a first protective layer 8 and a second protective layer 95;
  • the electrical contact area 4 is provided with the upper surface of the metal layer 3, and the width is smaller than the width of the metal layer 3.
  • the first protective layer 8 and the second protective layer 9 are provided at both ends of the metal layer 3 and the upper surface of the metal layer 3, respectively. Positions of both ends of the metal layer 3.
  • the panel of the present application may be a TN panel (full name is Twisted Nematic, that is, a twisted nematic panel), an IPS panel (In-PaneSwitcing, plane conversion), a VA panel (Multi-domain Vertica Aignment, multi-quadrant vertical alignment technology), of course , Or other types of panels, applicable.
  • TN panel full name is Twisted Nematic, that is, a twisted nematic panel
  • IPS panel In-PaneSwitcing, plane conversion
  • VA panel Multi-domain Vertica Aignment, multi-quadrant vertical alignment technology

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板（1）及其制造方法，显示面板（1）包括：第一基板（2）；金属层（3），金属层（3）设于第一基板（2）上；金属层（3）包括电接触区域（4）；保护层（5），覆盖在金属层（3）之上，避让电接触区域（4）。

Description

一种显示面板及其制造方法
本申请要求于2018年9月14日提交中国专利局、申请号为CN201811071915.6、发明名称为“一种显示面板及其制造方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，更具体的说，涉及一种显示面板及其制造方法。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
液晶显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(Backlight Module)。液晶面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
阳极常用电极层(ITO)与银(Ag)组合的结构，信号输入导线常用金属铝(Al)，阳极图形刻蚀常用酸液湿刻的方式进行，在酸液中由于Ag与Al的电势能差异发生化学反应：Ag ++Al→Al ++Ag，造成铝(Al)导线两端被腐蚀，同时银(Ag)析出。
该现象在电接触区尤为严重，铝腐蚀会导致信号走线电阻变大或断路。
技术解决方案
本申请所要解决的是提供一种防止铝侧面腐蚀的显示面板及其制造方法。
为实现上述目的，本申请提供了显示面板。一种显示面板，所述显示面板包括：
第一基板；
金属层，所述金属层设于第一基板上；
所述金属层包括电接触区域，跟对应的导电部件电连接；
保护层；覆盖在金属层之上，避让所述电接触区域。
本申请还公开了一种显示面板。一种显示面板，所述显示面板包括：第一基板、金属层和保护层；金属层，所述金属层设于第一基板上；所述金属层包括电接触区域，跟对应的导电部件电连接；保护层；覆盖在金属层之，避让所述电接触区域；所述保护层包括第一保护层和第二保护层；所述电接触区域设置所述金属层的上表面，宽度小于所述金属层的宽度；所述第一保护层与第二保护层分别设在金属层的两端，第一保护层和第二保护层的部分保护层覆盖在金属层的上表面，对应金属层两端部位置。所述保护层为与平坦化层相同的材质，所述金属层包括铝。
本申请还公开了一种显示面板的制造方法。一种显示面板制造的方法，所述方法步骤包括：
在第一基板上形成金属层；
在金属层上形成保护层；
所述金属层包括电接触区域，跟对应的导电部件电连接；所述保护层避让所述电接触区域。
保护层在金属层上，在进行阳极刻蚀时，因为金属层有一定厚度保护层进行保护，可以有效避免被腐蚀，从而使其电路减少腐蚀，避免造成电阻过大，电路短路从而使断路，造成显示屏画质下降。由于保护层覆盖在所述金属层的非电接触区域，不会影响金属层的电连接效果。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请的其中一个实施例的整体结构的示意图；
图2是本申请的其中一个实施例的整体结构的示意图；
图3是本申请的其中一个实施例的结构俯视的示意图；
图4是本申请的其中一个实施例的方法步骤的示意图；
图5是本申请的其中一个实施例的方法步骤的示意图。
本申请的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和较佳的实施例对本申请作进一步说明。
如图1至图3所示，本申请实施例公布了一种显示面板1。
第一基板2、金属层3和保护层5；金属层3，金属层3设于第一基板2上；金属层3包括电接触区域4，跟对应的导电部件电连接；保护层5；覆盖在金属层3，避让电接触区域4；保护层5包括第一保护层8和第二保护层9；电接触区域4设置金属层3的上表面，宽度小于金属层3的宽度；第一保护层8与第二保护层9分别设在金属层3的两端，以及第一保护层8和第二保护层9的部分保护层覆盖在金属层3的上表面，对应电接触区域4两端部位置。保护层5为与平坦化层相同的材质，金属层包括铝。
作为本申请的另一实施例，参考图1至图5所示，公开了一种显示面板1。
显示面板1包括：第一基板2、金属层3和保护层5；金属层3，金属层3设于第一基板2上；金属层3包括电接触区域4，跟对应的导电部件电连接；保护层5；覆盖在金属层3之上，避让电接触区域4。
保护层5在金属层3上，在进行阳极刻蚀时，因为金属层3有一定厚度保护层5进行保护，可以有效避免被腐蚀，从而使其电路减少腐蚀，避免造成电阻过大，电路短路从而使断路，造成显示屏画质下降。由于保护层5覆盖在金属层3的非电接触区域4，不会影响金属层3的电连接效果。
本实施例可选的，保护层5包括第一保护层8和第二保护层9；
电接触区域4设置金属层3的上表面，宽度小于金属层3的宽度；第一保护层8与第二保护层9分别设在金属层3的两端，以及第一保护层8和第二保护层9的部分保护层覆盖在金属层3的上表面，对应电接触区域4两端部位置。
除去进行除电接触区域4外，金属层3的裸露部分都被保护到了，保护的更全面。
本实施例可选的，保护层5包括第三保护层10和第四保护层11；
电接触区域4设置金属层3的上表面，宽度小于金属层3的宽度；第三保护层10与第四保护层11分别设在金属层3的两端。
金属层3的两端覆盖，保证了侧面不被腐蚀，保证了电接触区域4电连接进行的更彻底，与对应的导电部件电连接的更充分，通电效果更好。
本实施例可选的，保护层5为与平坦化层相同的材质。质地好，有一定的厚度，避免被腐蚀，同时该厚度不会影响电连接后金属层3表面接触效果。
本实施例可选的，金属层包括铝。
导电性能好，节约成本，易制造，也可为铜银等导电性能好的材质。
作为本申请的另一实施例，参考图4，公开了一种显示面板1的制造方法。
显示面板1的制造方法包括：
S41:在第一基板2上形成金属层；
S42:在金属层上形成保护层5；
金属层3包括电接触区域4，跟对应的导电部件电连接；保护层5避让电接触区域4。
保护层5在金属层3上，在进行阳极刻蚀时，因为金属层3有一定厚度保护层5进行保护，可以有效避免被腐蚀，从而使其电路减少腐蚀，避免造成电阻过大，电路短路从而使断路，造成显示屏画质下降。由于保护层5覆盖在金属层3的非电接触区域4，不会影响金属层3的电连接效果，工节省序，加工简单。
本实施例可选的，参考图5所示
S51：在金属层上本实施例涂布保护层5材料；
S52：采用半透光掩膜板对电接触区域4和保护层5对应区域进行曝光；以及
S53：显影后形成保护层5；
半透光掩膜板对应电接触区域4的透光率大于对应保护层5区域的透光率。半透光掩膜板包括：全透光区域12；全透光区域12对应金属层3的电接触区域4；以及半透光区域12；与全透光区域12同在一条线上，对应金属层3的两端部位。
通过位置对应，选定保护的区域，主次保护，不增加制程，就保证了保护的范围，使其保护更有效，不增加制程的情况下，可以保留一定的厚度，防止蚀刻时，金属层3的侧面被腐蚀，发生短路的情况，影响电连接的效果。
本实施例可选的，透光率在电接触区域4的两端部位的透光率为 20～30％，电接触区域4的透过率100％。
保证在曝光显影后两端的保护层5在金属层3两端保证一定的厚度，有一定的厚度，在进行蚀刻时就会保护到金属层不被边缘的材质腐蚀掉，影响到电接触区域4导致电阻变大和短路。
本实施例可选的，保护层5包括第一保护层8和第二保护层95；
电接触区域4设置金属层3的上表面，宽度小于金属层3的宽度；第一保护层8与第二保护层9分别设在金属层3的两端，以及金属层3的上表面，对应金属层3的两端部位置。
全面防护除电接触区域4对应的位置外，金属层3的裸露部分都被保护到了，保护的更全面。
本申请的面板可以是TN面板(全称为Twisted Nematic，即扭曲向列型面板)、IPS面板(In-PaneSwitcing，平面转换)、VA面板(Multi-domain Vertica Aignment，多象限垂直配向技术)，当然，也可以是其他类型的面板，适用即可。
以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (17)

  1. 一种显示面板，包括：
    第一基板；
    金属层，所述金属层设于第一基板上；
    所述金属层包括电接触区域，跟对应的导电部件电连接；
    保护层，覆盖在金属层外层，避让所述电接触区域。
  2. 如权利要求1所述的一种显示面板，其中，所述保护层包括第一保护层和第二保护层；
    所述电接触区域设置于所述金属层的上表面，电接触区域宽度小于所述金属层的宽度；所述第一保护层与第二保护层分别设在金属层的两端，以及第一保护层和第二保护层的部分保护层覆盖在金属层的上表面，对应电接触区域两端部位置。
  3. 如权利要求1所述的一种显示面板，其中，所述保护层包括第三保护层和第四保护层；
    所述电接触区域设置所述金属层的上表面，宽度小于所述金属层的宽度；所述第三保护层与第四保护层分别设在金属层的两端。
  4. 如权利要求1所述的一种显示面板，其中，所述保护层为与平坦化层相同的材质。
  5. 如权利要求1所述的一种显示面板，其中，所述金属层包括铝。
  6. 如权利要求1所述的一种显示面板，其中，所述金属层包括铜。
  7. 如权利要求1所述的一种显示面板，其中，所述金属层包括银。
  8. 如权利要求1所述的一种显示面板，其中，所述金属层的除电接触区域外完全被保护层覆盖。
  9. 如权利要求1所述的一种显示面板，其中，所述第一基板为阵列基板。
  10. 一种显示面板，包括：
    第一基板；
    金属层，所述金属层设于第一基板上；
    所述金属层包括电接触区域，跟对应的导电部件电连接；
    保护层；覆盖在金属层外层，避让所述电接触区域；
    所述保护层包括第一保护层和第二保护层；
    所述电接触区域设置所述金属层的上表面，电接触区域的宽度小于所述金属层的宽度；所述第一保护层与第二保护层分别设在金属层的两端，以及第一保护层和第二保护层的部分保护层覆盖在金属层的上表面，对应电接触区域两端部位置，所述保护层为与平坦化层相同的材质，所述金属层包括铝。
  11. 一种显示面板的制造方法，所述显示面板的制造方法步骤包括：
    在第一基板上形成金属层；
    在金属层上形成保护层；
    所述金属层包括电接触区域，跟对应的导电部件电连接；所述保护层避让所述电接触区域。
  12. 如权利要求11所述的一种显示面板的制造方法，其中，所述在金属层上形成保护层的步骤包括：
    在金属层上涂布保护层材料；
    采用半透光掩膜板对电接触区域和保护层对应区域进行曝光；以及
    显影后形成所述保护层；
    所述半透光掩膜板对应电接触区域的透光率大于对应保护层区域的透光率。
  13. 如权利要求11所述的一种显示面板的制造方法，其中，所述透光率在电接触区域的两端部位的透光率为20～30％。
  14. 如权利要求11所述的一种显示面板的制造方法，其中，所述保护层包括第一保护层和第二保护层；
    所述电接触区域设置所述金属层的上表面，宽度小于所述金属层的宽度；所述第一保护层与第二保护层分别设在金属层的两端，以及金属层的上表面，对应金属层的两端部位置。
  15. 如权利要求11所述的一种显示面板的制造方法，其中，所述电接触区域的透过率80～100％。
  16. 如权利要求11所述的一种显示面板的制造方法，其中，所述半透光掩膜板包括：
    全透光区域，所述全透光区域对应金属层的电接触区域；以及
    半透光区域，所述半透光区域对应金属层的两端部位。
  17. 如权利要求15所述的一种显示面板的制造方法，其中，所述半透光区域与全透光区域同在一条线上。
PCT/CN2018/111309 2018-09-14 2018-10-23 一种显示面板及其制造方法 Ceased WO2020051986A1 (zh)

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