WO2020051982A1 - 曝光补偿表的生成方法、光阻曝光补偿的方法及曝光机台 - Google Patents

曝光补偿表的生成方法、光阻曝光补偿的方法及曝光机台 Download PDF

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WO2020051982A1
WO2020051982A1 PCT/CN2018/111241 CN2018111241W WO2020051982A1 WO 2020051982 A1 WO2020051982 A1 WO 2020051982A1 CN 2018111241 W CN2018111241 W CN 2018111241W WO 2020051982 A1 WO2020051982 A1 WO 2020051982A1
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Prior art keywords
exposure
photoresist
compensation table
machine
parameters
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English (en)
French (fr)
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黄北洲
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HKC Co Ltd
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HKC Co Ltd
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Priority to US16/313,140 priority Critical patent/US11243474B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Definitions

  • the present application relates to the field of photoresist exposure, and in particular, to a method for generating an exposure compensation table, a method for photoresist exposure compensation, and an exposure machine.
  • Photoresist exposure display technology is widely used in various fields.
  • the pattern formation of each photoresist on the display panel is generally formed by using exposure and development technology on the photoresist.
  • one method known by the inventors is to use an exposure machine and a mask with a specific pattern so that the exposed part of the photoresist is partially blocked to form a predetermined pattern after development.
  • the width of the photoresist line formed after exposure and development is directly related to the opening size of the photomask and related parameters of the exposure machine.
  • the solution to this application is to provide a method for generating an exposure compensation table, a method for compensating for photoresist exposure, and an exposure machine that can apply different exposure parameters to make the photoresist pattern line width consistent after exposure.
  • this application provides a method for generating an exposure compensation table, including:
  • Exposure and development step Start an exposure development test according to the preset exposure parameters, and record the preset exposure parameters and the obtained line width value of the photoresist pattern into the exposure compensation table;
  • the exposure parameters include at least the following parameters A: Type of exposure machine, mask opening size, light energy, exposure time;
  • Adjustment steps Adjust the exposure machine according to the preset exposure parameters of the exposure compensation table, and perform the exposure and development steps again until all the preset exposure parameters have been tested.
  • the size of the mask opening corresponding to the same position in each test is not changed, and the size of the mask opening is recorded in the exposure compensation table as a fixed value.
  • the exposure compensation table an exposure compensation table for a specific mask opening size.
  • the type of the exposure machine is a scanning exposure machine.
  • the exposure machine is a proximity exposure machine
  • the exposure parameter further includes a light wave band of the exposure machine.
  • Such a design is particularly suitable for an exposure machine that can adjust the light band of the exposure machine, and its application range is wider.
  • the exposure parameter further includes an exposed photoresist type.
  • This design is also suitable for the deployment of exposure compensation for different photoresist types, which has a wider range of applications.
  • the photoresist type may be a fixed value, and the photoresist type is a black matrix photoresist.
  • the present application discloses a method for photoresist exposure compensation, including a method for generating an exposure compensation table:
  • Exposure and development step Start an exposure development test according to the preset exposure parameters, and record the preset exposure parameters and the obtained line width value of the photoresist pattern into the exposure compensation table;
  • the exposure parameters include at least the following parameters A: Type of exposure machine, mask opening size, light energy, exposure time;
  • Adjustment steps Adjust the exposure machine according to the preset exposure parameters of the exposure compensation table, and perform the exposure and development steps again until all the preset exposure parameters have been tested.
  • the method for photoresist exposure compensation includes:
  • the target parameters include: the target photoresist pattern line width value after exposure, the type of exposure machine and the size of the mask opening;
  • the target parameter in the confirmation step is used as the query condition, and the corresponding exposure energy and exposure time parameters are queried in the preset exposure compensation table for exposure.
  • step N when the query target parameter falls within a preset threshold range of the corresponding parameter in the exposure compensation table, the query condition is considered to be satisfied.
  • a preset threshold range for threshold matching instead of exact matching, which has better adaptability.
  • the target parameter for confirming the query further includes the light wave band of the exposure machine.
  • Such a design is particularly suitable for an exposure machine that can adjust the light band of the exposure machine, and its application range is wider.
  • the exposure parameter further includes a photoresist type.
  • This design is also suitable for the deployment of exposure compensation for different photoresist types, which has a wider range of applications.
  • the present application also discloses an exposure machine, comprising: an exposure circuit, an exposure compensation control circuit connected to the exposure circuit, and a storage circuit storing an exposure compensation table.
  • the exposure compensation table includes: a target after exposure Photoresist pattern line width value, type of exposure machine, mask opening size, and corresponding exposure energy and exposure time parameters; the exposure compensation control circuit according to the target photoresist pattern line width value after exposure, type of exposure machine Read the corresponding exposure energy and exposure time parameters from the exposure compensation table and the mask opening size, and control the exposure circuit to perform exposure.
  • an exposure compensation table is recorded that records the preset exposure parameters and the obtained line width value of the photoresist pattern, and when the exposure machine performs exposure, the exposure compensation table is queried according to the target parameter Query corresponding parameters such as exposure energy and exposure time, so that the line width of the photoresist pattern formed after exposure to different exposure parameters is consistent and higher, and the display effect is better.
  • the existing photomask is used to adjust the exposure energy and exposure time of the machine. And other parameter compensation, so that the line width value of the photoresist pattern after the exposure is consistent with the line width value of the target photoresist pattern.
  • FIG. 1 is a schematic diagram of a method for generating an exposure compensation table according to an embodiment of the present application
  • 2 is an example of a difference in line width of a photoresist pattern formed after exposure and development using different exposure machines under the same mask opening size
  • Figure 3 shows three different exposure machines: the proximity exposure machine and the proximity exposure machine use a filter to filter out the ⁇ 320nm band (with 320nm filter) and retain the band> 320nm; further, the proximity exposure is used.
  • the frequency spectrum of the machine uses a filter to filter out the ⁇ 340nm band (with 340nm filter), and the band> 340nm is reserved to simulate the light wave spectrum of the scanning exposure machine;
  • FIG. 4 is a photoresist pattern line width value (CD value) measured by adjusting the exposure time of a black matrix photoresist under the same conditions of other process parameters;
  • Figures 5a-5c show the proximity exposure machine, the frequency spectrum of the proximity exposure machine uses a filter to filter out the ⁇ 320nm band (with 320nm filter), and the proximity exposure machine spectrum uses a filter to filter out the ⁇ 340nm band (With 340nm filter)
  • the BM photoresist pattern obtained after exposure is developed by using an analog scanning exposure machine without exposure compensation.
  • Figure 6 shows that the black matrix photoresist adjusts different light energy values (preset power, preset power +30; preset power +80) under the same conditions of other process parameters, and adjusts different exposure times.
  • FIG. 7 shows a method of photoresist exposure compensation using an exposure compensation table
  • Figures 8a-8c show that the black matrix photoresist (BM photoresist) uses a proximity exposure machine, the spectrum of the proximity exposure machine uses a filter to filter out the ⁇ 320nm band (with 320nm filter), and the proximity exposure machine is used The spectrum uses a filter to filter out the ⁇ 340nm band (with 340nm filter) to simulate a scanning exposure machine. After photoresist exposure compensation, the BM photoresist pattern developed after exposure is developed.
  • BM photoresist black matrix photoresist
  • FIG. 9 shows a schematic diagram of an exposure machine.
  • this application discloses a method for generating an exposure compensation table, including:
  • Exposure and development step A Start an exposure development test according to the preset exposure parameters, and record the preset exposure parameters and the obtained line width value of the photoresist pattern into an exposure compensation table;
  • the exposure parameters include: an exposure machine Table type, mask opening size, light energy, exposure time;
  • Adjustment step B Adjust the exposure machine according to the exposure parameters preset in the exposure compensation table, and perform the exposure development step A again until all the preset exposure parameters are tested.
  • the exposure compensation table may not record the exposure parameter corresponding to a fixed value. The essence is not without this parameter, but it is agreed to be a specific Values do not need to be recorded and queried. A person skilled in the art may select whether or not and which exposure parameter is a fixed value not described according to actual needs.
  • each test needs to go through the following steps: photoresist coating (HP)-> soft baking (HP)-> exposure (exposure)-> development (develop)-> hard baking (oven)-> measured Photoresist pattern line width value; wherein the parameter adjustment of the exposure and development is adjusted at the exposure stage, and the photoresist pattern line width value is measured after hard baking.
  • the size of the photomask opening is also used as one of its exposure parameters, wherein the photomask opening size corresponding to the same position in each test is unchanged, and the photomask opening size It can be recorded in the exposure compensation table as a fixed value, and becomes an exposure compensation table for a specific mask opening size; of course, it can also be tested for a number of mask opening sizes, and the mask opening size can be used as A plurality of values are recorded in the exposure compensation table, and become an exposure compensation table for a plurality of mask opening sizes.
  • the type of the exposure machine may be a scanning exposure machine or a proximity exposure machine.
  • the exposure parameters also include the light wave band of the exposure machine. Such a design is particularly suitable for an exposure machine that can adjust the light band of the exposure machine, and its application range is wider.
  • the exposure parameters further include the type of photoresist to be exposed, such as a black matrix photoresist, a red filter photoresist, a green filter photoresist, and a blue filter. Photoresistance, etc.
  • This design is also suitable for the deployment of exposure compensation for different photoresist types, which has a wider range of applications.
  • the photoresist type may be a fixed value, that is, an exposure compensation table for a specific photoresist type.
  • FIG. 2 shows an example of a difference in line width of a photoresist pattern formed after exposure and development using different exposure machines under the same mask opening size.
  • a proximity exposure machine proximity type alignment
  • the main peak of the exposure machine includes the G / H / I / J / K lines (as shown in Figure 3).
  • the photoresist pattern line width CD value obtained after exposure and development is 40 microns; while the right side shows the use of a scanning type alignment (scanning type aligner).
  • the main peak of the machine includes G / H / I lines (as shown in Figure 3).
  • the photoresist material reflects different characteristics. If the photoresist pattern line width CD value obtained after exposure and development is 40 micrometers, it must be changed. Mask opening size.
  • the spectrum of the proximity exposure machine uses a filter to filter out the spectrum of ⁇ 320nm band
  • the spectrum of the proximity exposure machine uses another filter
  • the filter filters out the spectrum after ⁇ 340nm to simulate the spectrum of a scanning exposure machine (scanning type exposure machine spectrum).
  • three different light wave spectrums are shown: the spectrum of the proximity exposure machine, the spectrum of the proximity exposure machine using a filter to filter out the ⁇ 320nm band, and the spectrum of the proximity exposure machine using another filter. Filter out the spectrum after ⁇ 340nm to simulate the spectrum of a scanning exposure machine (scanning type exposure machine spectrum).
  • the photoresist pattern line width value (CD value) is completed once. ) Record the measured line width value (CD value) of the photoresist pattern after the measurement.
  • CD value the measured line width value
  • Figures 5a-5c show that BM photoresist passes through a proximity exposure machine without a filter, the spectrum of the proximity exposure machine uses a filter to filter out ⁇ 320nm band (with 320nm filter), and a proximity exposure machine
  • the frequency spectrum uses a filter to filter out the ⁇ 340nm band (with 340nm filter) to simulate the BM photoresist pattern developed after exposure by a scanning exposure machine.
  • the difference in line width of the BM photoresist can be clearly seen, and the difference in The linearity of the pattern deteriorates and there is a risk of peeling.
  • BM photoresistor black matrix photoresistor
  • different light energy values preset power, preset power +30; preset power +80, etc.
  • the spectrum of the proximity exposure machine uses a filter to filter out the ⁇ 320nm band (with 320nm filter) when the light energy value increases by 30, and the spectrum of the proximity exposure machine uses the filter to filter out the ⁇ 340nm band (with 340nm filter) )
  • the line width value (CD value) of the photoresist pattern is equivalent to the normal light energy value of the proximity exposure machine without a filter.
  • the exposure compensation table was formed.
  • the following table shows an example of a specific exposure compensation table.
  • the exposure compensation table can also be recorded in other forms or data structures in all The exposure machine described above.
  • the photoresist exposure compensation can be performed by using the exposure compensation table.
  • this application also discloses a method for photoresist exposure compensation using the above exposure compensation table, including:
  • Confirmation step M confirm the query target parameters, the target parameters include: the target photoresist pattern line width value after exposure, the type of exposure machine and the size of the mask opening;
  • Query step N Query the corresponding exposure energy and exposure time parameters in the preset exposure compensation table with the target parameter in the confirmation step M as the query condition, and perform exposure.
  • the target parameter for confirming the query also includes the light wave band of the exposure machine.
  • Such a design is particularly suitable for an exposure machine that can adjust the light band of the exposure machine, and its application range is wider.
  • the query target parameter falls within a preset threshold range of the corresponding parameter in the exposure compensation table, it is considered to meet the query conditions.
  • a preset threshold range for threshold matching may be any one or more of the target photoresist pattern line width value, the light wave band of the exposure machine and the mask opening size, because the above parameter values It is not easy to enumerate and the adaptability of threshold matching is better.
  • the exposure parameter further includes a photoresist type.
  • This design is also suitable for the deployment of exposure compensation for different photoresist types, which has a wider range of applications.
  • Figures 8a-8c show the same type of black matrix photoresist (BM photoresist) using a proximity exposure machine without a filter, and the spectrum of the proximity exposure machine uses a filter to filter out the ⁇ 320nm band (with 320nm filter), retaining the band> 320nm; further, using the filter of the proximity exposure machine to filter out the ⁇ 340nm band (with 340nm filter), retaining the band> 340nm to simulate a scanning exposure machine, after querying the above exposure compensation Table, respectively, for photoresist exposure compensation (proximity exposure machines without filters use preset light energy values, and the spectrum of proximity exposure machines use filters to filter out pre-320nm bands (with 320nm filters).
  • BM photoresist black matrix photoresist
  • the light energy value is set to increase by 30, and the spectrum of the proximity exposure machine uses a filter to filter out the ⁇ 340nm band to simulate the pattern after the scanning light exposure machine (with the 340nm filter preset light energy value is increased by 80). It can be seen that the line width value (CD value) of the photoresist pattern is uniform, the difference is very small, and the linear shape of the pattern is obviously better, and there is no risk of peeling.
  • CD value line width value
  • This application also discloses an exposure machine using the above-mentioned exposure compensation table for exposure control, which includes: an exposure circuit 100, an exposure compensation control circuit 200 that is controlled and connected to the exposure circuit 100, and storage for storing the exposure compensation table.
  • the exposure compensation table includes: the target photoresist pattern line width value after exposure, the type of exposure machine, the opening size of the mask, and the corresponding exposure energy and exposure time parameters; the exposure compensation control circuit is based on Read the corresponding exposure energy and exposure time parameters from the exposure compensation table from the target photoresist pattern line width value, exposure machine type and mask opening size after exposure, and control the exposure circuit to perform exposure.

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Abstract

一种曝光补偿表的生成方法、光阻曝光补偿的方法及曝光机台。一种曝光补偿表的生成方法，包括：记录预设的曝光参数和光阻图案线宽值；曝光显影直至全部测试完毕。

Description

曝光补偿表的生成方法、光阻曝光补偿的方法及曝光机台
本申请要求于2018年09月11日提交中国专利局，申请号为CN201811054907.0、发明名称为“曝光补偿表的生成方法、光阻曝光补偿的方法及曝光机台”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光阻曝光领域，尤其涉及一种曝光补偿表的生成方法、光阻曝光补偿的方法及曝光机台。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。光阻曝光显示技术普遍应用于各种领域，以显示面板的制造来说，显示面板上各光阻的图案形成都是普遍采用对光阻进行曝光显影技术形成的。
对光阻进行曝光时，发明人知晓的一种方法是：使用曝光机，配合特定图案的光罩，使得光阻部分暴露部分遮挡，以在显影后形成预设的图案。曝光显影后形成的光阻线宽与光罩的开口尺寸和曝光机台的相关参数有直接关系。当同一黑色矩阵(black matrix)光阻在两种不同曝光机的曝光参数状态下使用时，因频谱差异不同，材料反应时交联程度不同，最终造成图案线宽(pattern CD)差异，导致不同产品的光阻图案线宽不同，显示效果受到明显影响。
技术解决方案
本申请要的解决是提供一种能适用不同曝光参数使得曝光后光阻图案线宽一致的曝光补偿表的生成方法、光阻曝光补偿的方法及曝光机台。
为实现上述目的，本申请提供了一种曝光补偿表的生成方法，包括：
曝光显影步骤：按照预设的曝光参数，开始一次曝光显影测试，并将预设的曝光参数和得到的光阻图案线宽值记录至曝光补偿表中；所述曝光参数包括以下各参数的至少一个：曝光机台类型、光罩开口尺寸、光能量、曝光时间；
调整步骤：按照曝光补偿表预设的曝光参数调整曝光机，重新执行曝光显影步骤，直至所有预设的曝光参数全部测试完毕。
可选的，所述曝光补偿表中，各次测试中对应同一位置的光罩开口尺寸不变，光罩开口尺寸作为一固定值记录在所述曝光补偿表中。这样的设计使得曝光补偿表成为针对某一特定光罩开口尺寸的曝光补偿表。
可选的，所述的曝光补偿表中，所述曝光机台类型为扫描式曝光机。
可选的，所述的曝光补偿表中，所述曝光机为近接式曝光机，所述曝光参数还包括曝光机的光线波段。这样的设计尤其适用于可对曝光机的光线波段进行调配的曝光机，其适用范围更广。
可选的，所述曝光参数还包括被曝光的光阻类型。这样的设计还适用于对不同光阻类型进行曝光补偿的调配，其适用范围更广。
可选的，所述的光阻类型可以为一固定值，所述的光阻类型为黑色矩阵光阻。
本申请公开一种光阻曝光补偿的方法，包括曝光补偿表的生成方法：
曝光显影步骤：按照预设的曝光参数，开始一次曝光显影测试，并将预设的曝光参数和得到的光阻图案线宽值记录至曝光补偿表中；所述曝光参数包括以下各参数的至少一个：曝光机台类型、光罩开口尺寸、光能量、曝光时间；
调整步骤：按照曝光补偿表预设的曝光参数调整曝光机，重新执行曝光显影步骤，直至所有预设的曝光参数全部测试完毕。
所述光阻曝光补偿的方法包括：
确认步骤：确认查询的目标参数，所述的目标参数包括：曝光后的目标光阻图案线宽值、曝光机台类型和光罩开口尺寸；
查询步骤：以确认步骤中的目标参数为查询条件，在预设的曝光补偿表中查询对应的曝光能量和曝光时间参数，进行曝光。
可选的，所述的步骤N中，当查询的目标参数落入曝光补偿表中对应参数的一预设阈值范围内，即认为符合查询条件。这样的设计是使用一预设阈值范围进行阈值匹配而不是精确匹配，其适应性更好。
可选的，所述的步骤N中，确认查询的目标参数还包括曝光机的光线波段。这样的设计尤其适用于可对曝光机的光线波段进行调配的曝光机，其适用范围更广。
可选的，所述的曝光参数还包括光阻类型。这样的设计还适用于对不同光阻类型进行曝光补偿的调配，其适用范围更广。
本申请还公开了一种曝光机台，包括：曝光电路、与所述曝光电路控制连接的曝光补偿控制电路、及存储曝光补偿表的存储电路，所述的曝光补偿表包括：曝光后的目标光阻图案线宽值、曝光机台类型、光罩开口尺寸、及对应的曝光能量和曝光时间参数；所述的曝光补偿控制电路根据曝光后的目标光阻图案线宽值、曝光机台类型和光罩开口尺寸从曝光补偿表中读取对应的曝光能量和曝光时间参数，控制曝光电路进行曝光。
本申请通过对不同的曝光参数进行曝光测试，生成记录有预设的曝光参数和得到的光阻图案线宽值的曝光补偿表，而在曝光机台进行曝光时通过根据目标参数查询曝光补偿表查询对应的如曝光能量和曝光时间等参数，使得适用不同曝光参数曝光后形成的光阻图案线宽一致更高，显示效果更好。进一步的，针对同一批待曝光产品，当曝光参数有变化时，不用重新对价格非常昂贵的光罩进行重新设计制作，而是使用现有的光罩，通过调整机台的曝光能量和曝光时间等参数补偿，使得曝 光后的光阻图案线宽值和目标光阻图案线宽值一致。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请实施例一种曝光补偿表的生成方法示意图；
图2是在同一光罩开口尺寸下使用不同的曝光机台曝光显影后形成的光阻图案线宽差异示例；
图3是三种不同的曝光机台：近接式曝光机、近接式曝光机频谱使用滤光片滤掉了≤320nm波段(with 320nm filter)、保留＞320nm的波段；进一步的，用近接式曝光机频谱使用滤光片滤掉了≤340nm波段(with 340nm filter)，保留＞340nm的波段以模拟扫描式曝光机的光波频谱；
图4是黑色矩阵光阻在其他制程参数相同的条件下调整曝光时间量测得到的光阻图案线宽值(CD值)；
图5a-5c示出了近接式曝光机、近接式曝光机频谱使用滤光片滤掉了≤320nm波段(with 320nm filter)、及用近接式曝光机频谱使用滤光片滤掉了≤340nm波段(with 340nm filter)以模拟扫描式曝光机未曝光补偿，曝光后显影得到的BM光阻图案。
图6示出了黑色矩阵光阻在其他制程参数相同的条件下调整不同的光能量值(预设功率、预设功率+30；预设功率+80)，调整不同的曝光时间，量测得到的光阻图案线宽值(CD值)；
图7示出了一种使用曝光补偿表的光阻曝光补偿的方法；
图8a-8c示出了黑色矩阵光阻(BM光阻)分别使用近接式曝光机、近接式曝光机频谱使用滤光片滤掉了≤320nm波段(with 320nm filter)， 以及用近接式曝光机频谱使用滤光片滤掉了≤340nm波段(with 340nm filter)以模拟扫描式曝光机，经光阻曝光补偿，曝光后显影得到的BM光阻图案。
图9示出一种曝光机台的示意图。
本发明的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式 “一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
在图中，结构相似的单元是以相同标号表示。
为使得适用不同曝光参数曝光后形成的光阻图案线宽一致更高，显示效果更好，如图1所示，本申请公开了一种曝光补偿表的生成方法，包括：
曝光显影步骤A：按照预设的曝光参数，开始一次曝光显影测试，并将预设的曝光参数和得到的光阻图案线宽值记录至曝光补偿表中；所述曝光参数包括有：曝光机台类型、光罩开口尺寸、光能量、曝光时间；
调整步骤B：按照曝光补偿表预设的曝光参数调整曝光机，重新执行曝光显影步骤A，直至所有预设的曝光参数全部测试完毕。
上述曝光参数中，也可以约定某一个或多个参数为一特定的固定值，则上述曝光补偿表中可不记载对应为固定值的曝光参数，其本质并不是无此参数，只是约定为一特定值不用进行记录及查询。本领域的技术人员可以根据实际需要选择是否需要以及选择哪个曝光参数为不记载的固定值。
其中，每次测试分别需要经历以下步骤：光阻涂布(coater)->软烤(HP)->曝光(exposure)->显影(develop)->硬烤(oven)->量测得到的光阻图案线宽值；其中，所述曝光显影的参数调整是在曝光阶段调节，而在硬烤后再量测得到的光阻图案线宽值。
本实施例可选的，在所述曝光补偿表中，光罩开口尺寸也作为其一项曝光参数，其中，所述各次测试中对应同一位置的光罩开口尺寸不变，光罩开口尺寸可以作为一固定值记录在所述曝光补偿表中，成为针对某一特定光罩开口尺寸的曝光补偿表；当然，也可以针对多个数值的光罩开口尺寸进行测试，光罩开口尺寸可以作为多个值记录在所述曝光 补偿表中，成为针对多个光罩开口尺寸的曝光补偿表。
本实施例可选的，所述的曝光补偿表中，所述曝光机台类型可以是扫描式曝光机，或近接式曝光机；对于近接式曝光机来说，由于可以使用不同波段的滤光片，所述曝光参数还包括曝光机的光线波段。这样的设计尤其适用于可对曝光机的光线波段进行调配的曝光机，其适用范围更广。
可选的，所述的曝光补偿表中，所述曝光参数还包括被曝光的光阻类型，如黑色矩阵光阻、红色滤光片光阻、绿色滤光片光阻、蓝色滤光片光阻等。这样的设计还适用于对不同光阻类型进行曝光补偿的调配，其适用范围更广。当然，所述的曝光补偿表中，所述的光阻类型可以为一固定值，即成为针对某一特定光阻类型的曝光补偿表。
图2示出了在同一光罩开口尺寸下，使用不同的曝光机台，其曝光显影后形成的光阻图案线宽差异示例。如左侧示出的是使用近接式曝光机(proximity type aligner)，其曝光机台主峰值包含G/H/I/J/K线(如图3中所示)，当其使用的光罩开口尺寸为39微米时，其曝光显影后得到的光阻图案线宽CD值为40微米；而右侧示出的是使用扫描式曝光机(scanning type aligner)，因曝光机频谱差异，其曝光机台主峰值包含G/H/I线(如图3中所示)，光阻材料反映特性不同，要想曝光显影后得到的光阻图案线宽CD值为40微米，必须改变其使用的光罩开口尺寸。
下面以三种不同光波频谱的曝光机为例进行说明：近接式曝光机频谱、近接式曝光机频谱使用滤光片滤掉了≤320nm波段后频谱、以及近接式曝光机频谱使用另一滤光片滤掉≤340nm波段后频谱，以模拟扫描式曝光机频谱(scanning type曝光机频谱)。如图3分别示出了三种不同的光波频谱：近接式曝光机频谱、近接式曝光机频谱使用滤光片滤掉了≤320nm波段后频谱、以及近接式曝光机频谱使用另一滤光片滤掉≤340nm波段后频谱，以模拟扫描式曝光机频谱(scanning type曝光 机频谱)。
如图4中所示，以黑色矩阵光阻(BM光阻)、同样的光能量值为例，在其他制程参数相同的条件下，调整曝光时间，完成一次光阻图案线宽值(CD值)量测后记录量测得到的光阻图案线宽值(CD值)，从图中可以看到，不同的光线频谱的机台在不同的曝光时间下光阻交联反应程度不同，光阻图案线宽值(CD值)存在明显差异。
如图5a-5c示出了BM光阻在经过未使用滤光片的近接式曝光机、近接式曝光机频谱使用滤光片滤掉了≤320nm波段(with 320nm filter)、及近接式曝光机频谱使用滤光片滤掉了≤340nm波段(with 340nm filter)以模拟扫描式曝光机曝光后显影得到的BM光阻图案，其中可以明显看出BM光阻线宽差异，并且可以看到5c中图案(pattern)的直线性变差，且有剥落(peeling)风险。
如图6中所示，以黑色矩阵光阻(BM光阻)、不同的光能量值为例(预设功率、预设功率+30；预设功率+80等)，在其他制程参数相同的条件下，调整不同的曝光时间，完成一次光阻图案线宽值(CD值)量测后记录量测得到的光阻图案线宽值(CD值)。从图中可以看到，不同的光线频谱的机台在不同的光能量值、不同的曝光时间下光阻交联反应程度不同，可能得出相同或近似的光阻图案线宽值(CD值)。如：近接式曝光机频谱使用滤光片滤掉了≤320nm波段(with 320nm filter)当光能量值增加30时，以及近接式曝光机频谱使用滤光片滤掉了≤340nm波段(with 340nm filter)当光能量值增加80时，其光阻图案线宽值(CD值)与未使用滤光片的近接式曝光机正常光能量值相当。
在完成所有测试，形成了所述的曝光补偿表，如下表即示出了一种具体的曝光补偿表的示例，当然，所述的曝光补偿表也可以采用其他的形式或数据结构记录在所述的曝光机台中。
Figure PCTCN2018111241-appb-000001
Figure PCTCN2018111241-appb-000002
形成上述曝光补偿表后，可通过使用上述曝光补偿表的光阻曝光补偿。如图7所示，本申请还公开了一种使用上述曝光补偿表的光阻曝光补偿的方法，包括：
确认步骤M：确认查询的目标参数，所述的目标参数包括：曝光后的目标光阻图案线宽值、曝光机台类型和光罩开口尺寸；
查询步骤N：以确认步骤M中的目标参数为查询条件，在预设的曝光补偿表中查询对应的曝光能量和曝光时间参数，进行曝光。
其中，所述的查询步骤N中，确认查询的目标参数还包括曝光机的光线波段。这样的设计尤其适用于可对曝光机的光线波段进行调配的曝光机，其适用范围更广。
其中，所述的查询步骤N中，当查询的目标参数落入曝光补偿表中对应参数的一预设阈值范围内，即认为符合查询条件，这样的设计是使用一预设阈值范围进行阈值匹配而不是精确匹配，所述的进行阈值匹配的查询的目标参数可以是目标光阻图案线宽值、曝光机的光线波段和光罩开口尺寸三者中的任意一个或多个，因为上述的参数值不易枚举，阈值匹配的适应性更好。
在一个实施例中，所述的曝光参数还包括光阻类型。这样的设计还适用于对不同光阻类型进行曝光补偿的调配，其适用范围更广。
图8a-8c即示出了同一种黑色矩阵光阻(BM光阻)分别使用未使用滤光片的近接式曝光机、近接式曝光机频谱使用滤光片滤掉了≤320nm波段(with 320nm filter)，保留＞320nm波段；进一步的，用近接式曝光机频谱使用滤光片滤掉了≤340nm波段(with 340nm filter)，保留＞340nm的波段以模拟扫描式曝光机，经过查询上述曝光补偿表，分别进行了光阻曝光补偿(未使用滤光片的近接式曝光机使用预设的光能量值、近接式曝光机频谱使用滤光片滤掉了≤320nm波段(with 320nm filter)的预设的光能量值增加30，以及近接式曝光机频谱使用滤光片滤掉了≤340nm波段以模拟扫描式曝光机(with 340nm filter)预设的光能量值增加80)后的图案。可以看出，光阻图案线宽值(CD值)均匀，差异非常小，且图案(Pattern)的直线型明显变好，且无剥落风险。
本申请还公开了一种使用了上述的曝光补偿表进行曝光控制的曝光机台，包括：曝光电路100、与所述曝光电路100控制连接的曝光补偿控制电路200、及存储曝光补偿表的存储电路300，所述的曝光补偿表包括：曝光后的目标光阻图案线宽值、曝光机台类型、光罩开口尺寸、及对应的曝光能量和曝光时间参数；所述的曝光补偿控制电路根据曝光后的目标光阻图案线宽值、曝光机台类型和光罩开口尺寸从曝光补偿表中读取对应的曝光能量和曝光时间参数，控制曝光电路进行曝光。
以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (17)

  1. 一种曝光补偿表的生成方法，包括：
    曝光显影步骤：按照预设的曝光参数，开始一次曝光显影测试，并将预设的曝光参数和得到的光阻图案线宽值记录至曝光补偿表中；所述曝光参数包括以下各参数的至少一个：曝光机台类型、光罩开口尺寸、光能量、曝光时间；
    调整步骤：按照曝光补偿表预设的曝光参数调整曝光机，重新执行曝光显影步骤，直至所有预设的曝光参数全部测试完毕。
  2. 如权利要求1所述的一种曝光补偿表的生成方法，其中，所述曝光补偿表中，各次测试中对应同一位置的光罩开口尺寸不变，光罩开口尺寸作为一固定值记录在所述曝光补偿表中。
  3. 如权利要求1所述的一种曝光补偿表的生成方法，其中，所述的曝光补偿表中，所述曝光机为扫描式曝光机。
  4. 如权利要求1所述的一种曝光补偿表的生成方法，其中，所述的曝光补偿表中，所述曝光机为近接式曝光机，所述曝光参数还包括曝光机的光线波段。
  5. 如权利要求1所述的一种曝光补偿表的生成方法，其中，所述曝光参数还包括被曝光的光阻类型。
  6. 如权利要求5所述的一种曝光补偿表的生成方法，其中，所述光阻类型包括黑色矩阵光阻、红色滤光片光阻、绿色滤光片光阻和蓝色滤光片光阻。
  7. 一种光阻曝光补偿的方法，包括曝光补偿表的生成方法：
    曝光显影步骤：按照预设的曝光参数，开始一次曝光显影测试，并将预设的曝光参数和得到的光阻图案线宽值记录至曝光补偿表中；所述曝光参数包括以下各参数的至少一个：曝光机台类型、光罩开口尺寸、光能量、曝光时间；
    调整步骤：按照曝光补偿表预设的曝光参数调整曝光机，重新执行曝 光显影步骤，直至所有预设的曝光参数全部测试完毕。
    所述光阻曝光补偿的方法包括：
    确认步骤：确认查询的目标参数，所述的目标参数包括：曝光后的目标光阻图案线宽值、曝光机台类型和光罩开口尺寸；
    查询步骤：以确认步骤中的目标参数为查询条件，在预设的曝光补偿表中查询对应的曝光能量和曝光时间参数，进行曝光。
  8. 如权利要求7所述的一种光阻曝光补偿的方法，其中，所述曝光补偿表中，各次测试中对应同一位置的光罩开口尺寸不变，光罩开口尺寸作为一固定值记录在所述曝光补偿表中。
  9. 如权利要求7所述的一种光阻曝光补偿的方法，其中，所述的曝光补偿表中，所述曝光机为扫描式曝光机。
  10. 如权利要求7所述的一种光阻曝光补偿的方法，其中，所述的曝光补偿表中，所述曝光机为近接式曝光机，所述曝光参数还包括曝光机的光线波段。
  11. 如权利要求10所述的一种光阻曝光补偿的方法，其中，所述光线波段＞320纳米。
  12. 如权利要求11所述的一种光阻曝光补偿的方法，其中，所述光线波段＞340纳米。
  13. 如权利要求7所述的一种光阻曝光补偿的方法，其中，所述的步骤N中，当查询的目标参数落入曝光补偿表中对应参数的一预设阈值范围内，即认为符合查询条件。
  14. 如权利要求7所述的一种光阻曝光补偿的方法，其中，所述的步骤N中，确认查询的目标参数还包括曝光机的光线波段。
  15. 如权利要求7所述的一种光阻曝光补偿的方法，其中，所述的曝光参数还包括光阻类型。
  16. 如权利要求13所述的一种光阻曝光补偿的方法，其中，所述光阻类型包括黑色矩阵光阻、红色滤光片光阻、绿色滤光片光阻和蓝色滤光片 光阻。
  17. 一种曝光机台，包括：曝光电路、与所述曝光电路控制连接的曝光补偿控制电路、及存储曝光补偿表的存储电路，所述的曝光补偿表包括：曝光后的目标光阻图案线宽值、曝光机台类型、光罩开口尺寸、及对应的曝光能量和曝光时间参数；所述的曝光补偿控制电路根据曝光后的目标光阻图案线宽值、曝光机台类型和光罩开口尺寸从曝光补偿表中读取对应的曝光能量和曝光时间参数，控制曝光电路进行曝光。
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