WO2020051946A1 - 覆盖层分子结构、制作方法及对应的oled器件 - Google Patents

覆盖层分子结构、制作方法及对应的oled器件 Download PDF

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WO2020051946A1
WO2020051946A1 PCT/CN2018/107284 CN2018107284W WO2020051946A1 WO 2020051946 A1 WO2020051946 A1 WO 2020051946A1 CN 2018107284 W CN2018107284 W CN 2018107284W WO 2020051946 A1 WO2020051946 A1 WO 2020051946A1
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molecular structure
cover layer
toluene
diphenylamine
bromo
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迟明明
李相烨
洪澈广
王煦
李先杰
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings

Definitions

  • the invention relates to the field of manufacturing a display device, in particular to a molecular structure of a cover layer, a manufacturing method and a corresponding OLED device.
  • AMOLED Active-matrix organic light emitting diode
  • AMOLED devices use a cover layer to protect the light-emitting functional layer when performing thin-film encapsulation.
  • PECVD Pulsma Enhanced Chemical Deposition
  • plasma bombardment in PECVD will occur. It affects the cover layer and may affect the device functional layer.
  • South Korea's Samsung Corporation has developed an AMOLED device that vapor-deposits a layer of inorganic substances (such as LiF, etc.) between the cover layer and the packaging film layer of SiN, which can effectively prevent the cover layer or device functional layer from being damaged by plasma.
  • the embodiments of the present invention provide a cover layer molecular structure, a manufacturing method, and a corresponding OLED device with low manufacturing cost and low manufacturing difficulty, so as to solve the technical problems of high manufacturing cost and difficult manufacturing of the existing OLED device. .
  • An embodiment of the present invention provides a molecular structure of a cover layer, which includes a polymer structure formed by bonding a first central structure and a second central structure;
  • the first central structure is one of 9,9-dimethyl-2-bromofluorene, 2-bromo-9,9'-spirobifluorene, and 2-bromo-9,9-diphenylfluorene;
  • the second central structure is one of 3-p-toluene-4-m-toluene-diphenylamine and 4,4'-bis (3,5-xylene) -diphenylamine.
  • the molecular structure of the 2-bromo-9,9-diphenylphosphonium is:
  • the polymer structure is:
  • the molecular structure of the cover layer is generated by the following steps:
  • the refractive index of the molecular structure of the cover layer is 1.05 to 2.15 for incident light having a wavelength of 450 nm;
  • the refractive index of the molecular structure of the cover layer is 1.85 to 2.05.
  • the extinction coefficient of the molecular structure of the cover layer is 40k to 100k.
  • An embodiment of the present invention also provides a method for manufacturing a molecular structure of a cover layer, which includes: adding a first central structure material, a second central structure material, palladium acetate, and tri-tert-butylphosphine tetrafluoro into a 100ml two-neck bottle. Borate
  • the first central structure is one of 9,9-dimethyl-2-bromofluorene, 2-bromo-9,9'-spirobifluorene, and 2-bromo-9,9-diphenylfluorene;
  • the second central structure is one of 3-p-toluene-4-m-toluene-diphenylamine and 4,4'-bis (3,5-xylene) -diphenylamine.
  • the polymer structure is:
  • the refractive index of the molecular structure of the cover layer is 1.05 to 2.15 for incident light having a wavelength of 450 nm;
  • the refractive index of the molecular structure of the cover layer is 1.85 to 2.05;
  • the extinction coefficient of the molecular structure of the cover layer is 40k to 100k.
  • An embodiment of the present invention also provides an OLED device, which includes an anode substrate, a hole injection layer provided on the anode substrate, a hole transport layer provided on the hole injection layer, and the holes.
  • a light-emitting layer on a transport layer, a hole-blocking layer provided on the light-emitting layer, an electron-transport layer provided on the hole-blocking layer, an electron injection layer provided on the electron-transport layer, and the electrons A cathode substrate on the injection layer, a cover layer provided on the cathode substrate, and a packaging film layer provided on the cover layer;
  • the cover layer is made of the cover layer molecular structure according to any one of the preceding claims.
  • the cover layer molecular structure, manufacturing method and corresponding OLED device of the present invention use the cover layer molecular structure with higher refractive index and higher extinction coefficient to make the cover layer of the OLED device, so that the cover layer
  • the layer can effectively prevent the functional layer of the device from being damaged by the plasma, which reduces the manufacturing cost of the OLED device, and reduces the manufacturing difficulty of the OLED device. It effectively solves the existing manufacturing cost of the OLED device, which is relatively high and difficult to manufacture. technical problem.
  • FIG. 1 is a flowchart of a method for manufacturing a molecular structure of a cover layer according to the present invention
  • FIG. 2 is a schematic structural diagram of an embodiment of an OLED device according to the present invention.
  • the invention provides a molecular structure of a cover layer, which can be used for making a cover layer of an OLED device, so as to protect the device functional layers such as the electron injection layer, the electron transport layer, and the light emitting layer of the OLED device. Therefore, the manufacturing cost of the OLED device can be reduced, and the manufacturing difficulty of the OLED device can be reduced.
  • the molecular structure of the cover layer of the present invention may be formed by bonding a first central structure and a second central structure, wherein the first central structure is 9,9-dimethyl-2-bromofluorene, 2-bromo-9,9'- One of spirobifluorene and 2-bromo-9,9-diphenylphosphonium; the second central structure is 3-p-toluene-4-m-toluene-diphenylamine and 4,4'-bis (3,5-di Toluene) -diphenylamine.
  • the polymer structure synthesized from the first central structure molecule and the second central structure molecule is:
  • the above polymer structure is composed of a relatively rigid first central structure and a second central structure.
  • the first central structure and the second central structure have a certain polarity, and the molecular weight is not higher than 900, which can ensure the synthesized polymer.
  • the structure has a higher refractive index.
  • the first central structure and the second central structure have a large conjugate structure, which can ensure that the synthesized polymer structure has a high extinction coefficient.
  • the synthesized high-root structure has a higher glass transition temperature and higher thermal stability, that is, the material of the polymer structure has better low temperature resistance and can better resist the bombardment of high-energy particles such as plasma. Invariant.
  • the polymer structure has a high absorption coefficient for light in a wavelength range of 250 to 400 nm.
  • the refractive index of the molecular structure of the cover layer of this embodiment is 1.05 to 2.15; for incident light at a wavelength of 530 nm, the refractive index of the molecular structure of the cover layer of this embodiment is 1.85 to 2.05; for wavelengths of 340 nm to For 380nm incident light, the extinction coefficient of the molecular structure of the cover layer is 40k to 100k.
  • FIG. 1 is a flowchart of a method for manufacturing a molecular structure of a cover layer according to the present invention.
  • the manufacturing method of the molecular structure of the cover layer in this embodiment includes:
  • Step S101 adding a first central structural material, a second central structural material, palladium acetate, and tri-tert-butylphosphine tetrafluoroborate to a 100 ml two-necked bottle;
  • step S102 in a argon atmosphere, water- and oxygen-removing toluene is added, and sodium tert-butoxide (NaOt-Bu) is used as a base, and reacted at 120 degrees for 48 hours to obtain a molecular structure of the cover layer.
  • NaOt-Bu sodium tert-butoxide
  • the present invention also provides an OLED device.
  • FIG. 2 is a schematic structural diagram of an embodiment of the OLED device of the present invention.
  • the OLED device 20 includes an anode substrate 21, a hole injection layer 22, a hole transport layer 23, a light emitting layer 24, a hole blocking layer 25, an electron transport layer 26, an electron injection layer 27, a cathode substrate 28, a cover layer 29, and a package.
  • Thin film layer 2A is a schematic structural diagram of an embodiment of the OLED device of the present invention.
  • the OLED device 20 includes an anode substrate 21, a hole injection layer 22, a hole transport layer 23, a light emitting layer 24, a hole blocking layer 25, an electron transport layer 26, an electron injection layer 27, a cathode substrate 28, a cover layer 29, and a package.
  • Thin film layer 2A Thin film layer 2A.
  • the hole injection layer 22 is disposed on the anode substrate 21, the hole transport layer 23 is disposed on the hole injection layer 22, the light emitting layer 24 is disposed on the hole transport layer 23, and the hole blocking layer 25 is disposed on the light emitting layer 24.
  • the electron transport layer 26 is disposed on the hole blocking layer 25, the electron injection layer 27 is disposed on the electron transport layer 26, the cathode substrate 28 is disposed on the electron injection layer 27, the cover layer 29 is disposed on the cathode substrate 28, and the thin film layer 2A is encapsulated It is provided on the cover layer 29.
  • the molecular structure of the cover layer is:
  • the molecular structure of the cover layer is formed by bonding a first central structure and a second central structure, wherein the first central structure is 9,9-dimethyl-2-bromofluorene, 2-bromo-9,9 ' -Spirobifluorene and 2-bromo-9,9-diphenylphosphonium; the second central structure is 3-p-toluene-4-m-toluene-diphenylamine and 4,4'-bis (3,5- Xylene) -diphenylamine.
  • the refractive index of the molecular structure of the cover layer is 1.05 to 2.15; for incident light with a wavelength of 530 nm, the refractive index of the molecular structure of the cover layer is 1.85 to 2.05;
  • the molecular structure of the layer has an extinction coefficient of 40k to 100k.
  • the cover layer 29 in the OLED device of this embodiment has a higher refractive index and a higher extinction coefficient, and it is not necessary to provide an inorganic layer between the encapsulation film layer 2A and the cover layer 29 to prevent plasma damage. Therefore, the manufacturing cost of the OLED device is low and the manufacturing difficulty is small.
  • the cover layer molecular structure, manufacturing method and corresponding OLED device of the present invention use the cover layer molecular structure with higher refractive index and higher extinction coefficient to make the cover layer of the OLED device, so that the cover layer can effectively prevent the device functional layer from being covered.
  • Plasma destruction reduces the manufacturing cost of OLED devices and reduces the difficulty of manufacturing OLED devices. It effectively solves the technical problems of higher manufacturing costs and difficult manufacturing of existing OLED devices.

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Abstract

一种覆盖层分子结构，其包括由第一中心结构和第二中心结构键合而成的高分子结构，其中第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4'-二(3,5-二甲苯)-二苯胺其中之一。

Description

覆盖层分子结构、制作方法及对应的OLED器件 技术领域
本发明涉及显示器件制作领域，特别是涉及一种覆盖层分子结构、制作方法及对应的OLED器件。
背景技术
AMOLED(Active-matrix organic light emitting diode，有源矩阵有机发光二极体)作为一种新型的显示技术正在吸引越来越多的行业关注。世界各大面板厂商均已着力布控OLED产业，尤其是中国大陆厂商，借助政府扶持，打造自己的AMOLED面板生产技术。
现有的AMOLED器件进行薄膜封装时，会使用覆盖层对发光功能层进行保护，但是在进行PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学的气相沉积法)时，PECVD中的等离子体轰击会对覆盖层造成影响，并由可能对器件功能层造成影响。韩国三星公司研发了一种AMOLED器件在覆盖层以及SiN的封装薄膜层之间蒸镀了一层无机物(如LiF等)，可有效的防止覆盖层或器件功能层被等离子体破坏。
但是蒸镀LiF等无机层会造成AMOLED器件的制作成本的提高，且制作难度较大。
故，有必要提供一种覆盖层分子结构、制作方法及对应的OLED器件，以解决现有技术所存在的问题。
技术问题
本发明实施例提供一种制作成本较低且制作难度较小的覆盖层分子结构、制作方法及对应的OLED器件；以解决现有的OLED器件的制作成本较高且制作难度较大的技术问题。
技术解决方案
本发明实施例提供一种覆盖层分子结构，其包括由第一中心结构和第二中心结构键合而成高分子结构；
其中所述第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；
所述第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4’-二(3,5-二甲苯)-二苯胺其中之一。
在本发明实施例所述的覆盖层分子结构中，
所述9,9-二甲基-2-溴芴的分子结构为：
Figure PCTCN2018107284-appb-000001
所述2-溴-9,9'-螺二芴的分子结构为：
Figure PCTCN2018107284-appb-000002
所述2-溴-9,9-二苯基芴的分子结构为：
Figure PCTCN2018107284-appb-000003
所述3-对甲苯-4-间甲苯-二苯胺的分子结构为：
Figure PCTCN2018107284-appb-000004
所述4，4’-二(3,5-二甲苯)-二苯胺的分子结构为：
Figure PCTCN2018107284-appb-000005
在本发明实施例所述的覆盖层分子结构中，
所述高分子结构为：
Figure PCTCN2018107284-appb-000006
Figure PCTCN2018107284-appb-000007
Figure PCTCN2018107284-appb-000008
在本发明实施例所述的覆盖层分子结构中，所述覆盖层分子结构通过以下步骤生成:
以醋酸钯为催化剂，三叔丁基膦四氟硼酸盐为配体，NaOt-Bu为碱，在将所述第一中心结构和所述第二中心结构的分子在除水除氧的120度的甲苯中反应48小时，以生成所述高分子结构。
在本发明实施例所述的覆盖层分子结构中，针对波长为450nm的入射光，所述覆盖层分子结构的折射率为1.05至2.15；
针对波长为530nm的入射光，所述覆盖层分子结构的折射率为1.85至2.05。
在本发明实施例所述的覆盖层分子结构中，针对波长340nm至380nm的入射光，所述覆盖层分子结构的消光系数为40k至100k。
本发明实施例还提供一种覆盖层分子结构的制作方法，其包括：在100ml的二口瓶中加入第一中心结构的材料、第二中心结构材料、醋酸钯以及三叔丁基膦四氟硼酸盐；
在氩气氛围下，加入除水除氧的甲苯，以叔丁醇钠(NaOt-Bu)为碱，在120度下反应48小时，以得到覆盖层分子结构；
其中所述第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；
所述第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4’-二(3,5-二甲苯)-二苯胺其中之一。
在本发明实施例所述的覆盖层分子结构的制作方法中，
所述高分子结构为：
Figure PCTCN2018107284-appb-000009
Figure PCTCN2018107284-appb-000010
在本发明实施例所述的覆盖层分子结构的制作方法中，针对波长为450nm的入射光，所述覆盖层分子结构的折射率为1.05至2.15；
针对波长为530nm的入射光，所述覆盖层分子结构的折射率为1.85至2.05；
针对波长340nm至380nm的入射光，所述覆盖层分子结构的消光系数为40k至100k。
本发明实施例还提供一种OLED器件，其包括阳极基板、设置在所述阳极基板上的空穴注入层、设置在所述空穴注入层上的空穴传输层、设置在所述空穴传输层上的发光层、设置在所述发光层上的空穴阻挡层、设置在空穴阻挡层上的电子传输层、设置在所述电子传输层上的电子注入层、设置在所述电子注入层上的阴极基板、设置在所述阴极基板上的覆盖层以及设置在所述覆盖层上的封装薄膜层；
其中所述覆盖层采用上述权利要求任一的覆盖层分子结构制成。
有益效果
相较于现有的OLED器件，本发明的覆盖层分子结构、制作方法及对应的OLED器件使用具有较高折射率以及较高消光系数的覆盖层分子结构来制作OLED器件的覆盖层，使得覆盖层可有效的防止器件功能层被等离子体破坏，降低了OLED器件的制作成本，减小的OLED器件的制作难度；有效的解决了现有的OLED器件的制作成本较高且制作难度较大的技术问题。
附图说明
图1为本发明的覆盖层分子结构的制作方法的流程图；
图2为本发明的OLED器件的实施例的结构示意图。
本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理 解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
本发明提供一种覆盖层分子结构，可用于制作OLED器件的覆盖层，以便对OLED器件的电子注入层、电子传输层以及发光层等器件功能层进行保护。从而可降低OLED器件的制作成本，降低OLED器件的制作难度。
本发明的覆盖层分子结构可由第一中心结构和第二中心结构键合而成，其中第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4’-二(3,5-二甲苯)-二苯胺其中之一。
其中9,9-二甲基-2-溴芴的分子结构为：
Figure PCTCN2018107284-appb-000011
2-溴-9,9'-螺二芴的分子结构为：
Figure PCTCN2018107284-appb-000012
2-溴-9,9-二苯基芴的分子结构为：
Figure PCTCN2018107284-appb-000013
3-对甲苯-4-间甲苯-二苯胺的分子结构为：
Figure PCTCN2018107284-appb-000014
4，4’-二(3,5-二甲苯)-二苯胺的分子结构为：
Figure PCTCN2018107284-appb-000015
由上述第一中心结构分子和第二中心结构分子合成的高分子结构为：
Figure PCTCN2018107284-appb-000016
Figure PCTCN2018107284-appb-000017
上述高分子结构由具有较为刚性的第一中心结构和第二中心结构组成，该第一中心结构和第二中心结构具有一定的极性，且分子量不高于900，可保证合成后的高分子结构具有较高的折射率。且第一中心结构和第二中心结构具有较大的共轭结构，可保证合成后的高分子结构具有较高的消光系数。
因此合成后的高根子结构具有较高的玻璃化转变温度及较高的热稳定性，即该高分子结构的材料的耐低温性能较好，可较好的抵抗等离子体等高能粒子的轰击而不变性。该高分子结构对250至400nm波长范围的光具有较高的吸收系数。
针对波长450nm的入射光，本实施例的覆盖层分子结构的折射率为1.05至2.15；针对波长530nm的入射光，本实施例的覆盖层分子结构的折射率为1.85至2.05；针对波长340nm至380nm的 入射光，覆盖层分子结构的消光系数为40k至100k。
请参照图1，图1为本发明的覆盖层分子结构的制作方法的流程图。本实施例的覆盖层分子结构的制作方法包括：
步骤S101，在100ml的二口瓶中加入第一中心结构材料、第二中心结构材料、醋酸钯以及三叔丁基膦四氟硼酸盐；
步骤S102，在氩气氛围下，加入除水除氧的甲苯，以叔丁醇钠(NaOt-Bu)为碱，在120度下反应48小时，以得到覆盖层分子结构。
本发明还提供一种OLED器件，请参照图2，图2为本发明的OLED器件的实施例的结构示意图。该OLED器件20包括阳极基板21、空穴注入层22、空穴传输层23、发光层24、空穴阻挡层25、电子传输层26、电子注入层27、阴极基板28、覆盖层29以及封装薄膜层2A。
其中空穴注入层22设置在阳极基板21上，空穴传输层23设置在空穴注入层22，发光层24设置在空穴传输层23上，空穴阻挡层25设置在发光层24上，电子传输层26设置在空穴阻挡层25上，电子注入层27设置在电子传输层26上，阴极基板28设置在电子注入层27上，覆盖层29设置在阴极基板28上，封装薄膜层2A设置在覆盖层29上。
其中覆盖层分子结构为：
Figure PCTCN2018107284-appb-000018
Figure PCTCN2018107284-appb-000019
具体的，该覆盖层分子结构由第一中心结构和第二中心结构键合而成，其中第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4’-二(3,5-二甲苯)-二苯胺其中之一。
针对波长为450nm的入射光，覆盖层分子结构的折射率为1.05至2.15；针对波长为530nm的入射光，覆盖层分子结构的折射率为1.85至2.05；针对波长340nm至380nm的入射光，覆盖层分子结构的消光系数为40k至100k。
本实施例的OLED器件中的覆盖层29具有较高的折射率以及较高的消光系数，不需要在封装薄膜层2A和覆盖层29之间在设置无机物层，以防止等离子体的破坏，因此该OLED器件的制作成 本较低且制作难度较小。
本发明的覆盖层分子结构、制作方法及对应的OLED器件使用具有较高折射率以及较高消光系数的覆盖层分子结构来制作OLED器件的覆盖层，使得覆盖层可有效的防止器件功能层被等离子体破坏，降低了OLED器件的制作成本，减小的OLED器件的制作难度；有效的解决了现有的OLED器件的制作成本较高且制作难度较大的技术问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种覆盖层分子结构，其包括由第一中心结构和第二中心结构键合而成高分子结构；
    其中所述第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；
    所述第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4’-二(3,5-二甲苯)-二苯胺其中之一。
  2. 根据权利要求1所述的覆盖层分子结构，其中所述9,9-二甲基-2-溴芴的分子结构为：
    Figure PCTCN2018107284-appb-100001
    所述2-溴-9,9'-螺二芴的分子结构为：
    Figure PCTCN2018107284-appb-100002
    所述2-溴-9,9-二苯基芴的分子结构为：
    Figure PCTCN2018107284-appb-100003
    所述3-对甲苯-4-间甲苯-二苯胺的分子结构为：
    Figure PCTCN2018107284-appb-100004
    所述4，4’-二(3,5-二甲苯)-二苯胺的分子结构为：
    Figure PCTCN2018107284-appb-100005
  3. 根据权利要求1所述的覆盖层分子结构，其中所述高分子结构为：
    Figure PCTCN2018107284-appb-100006
    Figure PCTCN2018107284-appb-100007
    Figure PCTCN2018107284-appb-100008
  4. 根据权利要求1所述的覆盖层分子结构，其中所述覆盖层分子结构通过以下步骤生成:
    以醋酸钯为催化剂，三叔丁基膦四氟硼酸盐为配体，叔丁醇钠(NaOt-Bu)为碱，在将所述第一中心结构和所述第二中心结构的分子在除水除氧的120度的甲苯中反应48小时，以生成所述高分子结构。
  5. 根据权利要求1所述的覆盖层分子结构，其中
    针对波长为450nm的入射光，所述覆盖层分子结构的折射率为1.05至2.15；
    针对波长为530nm的入射光，所述覆盖层分子结构的折射率为1.85至2.05。
  6. 根据权利要求1所述的覆盖层分子结构，其中针对波长340nm至380nm的入射光，所述覆盖层分子结构的消光系数为40k至100k。
  7. 一种覆盖层分子结构的制作方法，其包括：
    在100ml的二口瓶中加入第一中心结构材料、第二中心结构材料、醋酸钯以及三叔丁基膦四氟硼酸盐；
    在氩气氛围下，加入除水除氧的甲苯，以叔丁醇钠(NaOt-Bu)为碱，在120度下反应48小时，以得到覆盖层分子结构；
    其中所述第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；
    所述第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4’-二(3,5-二甲苯)-二苯胺其中之一。
  8. 根据权利要求7所述的覆盖层分子结构的制作方法，其中
    所述9,9-二甲基-2-溴芴的分子结构为：
    Figure PCTCN2018107284-appb-100009
    所述2-溴-9,9'-螺二芴的分子结构为：
    Figure PCTCN2018107284-appb-100010
    所述2-溴-9,9-二苯基芴的分子结构为：
    Figure PCTCN2018107284-appb-100011
    所述3-对甲苯-4-间甲苯-二苯胺的分子结构为：
    Figure PCTCN2018107284-appb-100012
    所述4，4’-二(3,5-二甲苯)-二苯胺的分子结构为：
    Figure PCTCN2018107284-appb-100013
  9. 根据权利要求7所述的覆盖层分子结构的制作方法，其中所述高分子结构为：
    Figure PCTCN2018107284-appb-100014
    Figure PCTCN2018107284-appb-100015
    Figure PCTCN2018107284-appb-100016
  10. 根据权利要求7所述的覆盖层分子结构的制作方法，其中，
    针对波长为450nm的入射光，所述覆盖层分子结构的折射率为1.05至2.15；
    针对波长为530nm的入射光，所述覆盖层分子结构的折射率为1.85至2.05。
  11. 根据权利要求7所述的覆盖层分子结构的制作方法，其中，
    针对波长340nm至380nm的入射光，所述覆盖层分子结构的消光系数为40k至100k。
  12. 一种OLED器件，其包括阳极基板、设置在所述阳极基板上的空穴注入层、设置在所述空穴注入层上的空穴传输层、设置在所述空穴传输层上的发光层、设置在所述发光层上的空穴阻挡层、设置在空穴阻挡层上的电子传输层、设置在所述电子传输层上的电子注入层、设置在所述电子注入层上的阴极基板、设置在所述阴极基板上的覆盖层以及设置在所述覆盖层上的封装薄膜层；
    其中所述覆盖层的覆盖层分子结构包括由第一中心结构和第二中心结构键合而成高分子结构；
    其中所述第一中心结构为9,9-二甲基-2-溴芴、2-溴-9,9'-螺二芴以及2-溴-9,9-二苯基芴其中之一；
    所述第二中心结构为3-对甲苯-4-间甲苯-二苯胺以及4，4’-二(3,5-二甲苯)-二苯胺其中之一。
  13. 根据权利要求12所述的OLED器件，其中所述9,9-二甲基-2-溴芴的分子结构为：
    Figure PCTCN2018107284-appb-100017
    所述2-溴-9,9'-螺二芴的分子结构为：
    Figure PCTCN2018107284-appb-100018
    所述2-溴-9,9-二苯基芴的分子结构为：
    Figure PCTCN2018107284-appb-100019
    所述3-对甲苯-4-间甲苯-二苯胺的分子结构为：
    Figure PCTCN2018107284-appb-100020
    所述4，4’-二(3,5-二甲苯)-二苯胺的分子结构为：
    Figure PCTCN2018107284-appb-100021
  14. 根据权利要求12所述的OLED器件，其中所述高分子结构为：
    Figure PCTCN2018107284-appb-100022
    Figure PCTCN2018107284-appb-100023
    Figure PCTCN2018107284-appb-100024
  15. 根据权利要求12所述的OLED器件，其中所述覆盖层分子结构通过以下步骤生成:
    以醋酸钯为催化剂，三叔丁基膦四氟硼酸盐为配体，叔丁醇钠(NaOt-Bu)为碱，在将所述第一中心结构和所述第二中心结构的分子在除水除氧的120度的甲苯中反应48小时，以生成所述高分子结构。
  16. 根据权利要求12所述的OLED器件，其中
    针对波长为450nm的入射光，所述覆盖层分子结构的折射率为1.05至2.15；
    针对波长为530nm的入射光，所述覆盖层分子结构的折射率为1.85至2.05。
  17. 根据权利要求12所述的OLED器件，其中针对波长340nm至380nm的入射光，所述覆盖层分子结构的消光系数为40k至100k。
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