WO2020047916A1 - Procédé de fabrication de plaque de fond de pilote de diode électroluminescente organique - Google Patents

Procédé de fabrication de plaque de fond de pilote de diode électroluminescente organique Download PDF

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Publication number
WO2020047916A1
WO2020047916A1 PCT/CN2018/107927 CN2018107927W WO2020047916A1 WO 2020047916 A1 WO2020047916 A1 WO 2020047916A1 CN 2018107927 W CN2018107927 W CN 2018107927W WO 2020047916 A1 WO2020047916 A1 WO 2020047916A1
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WO
WIPO (PCT)
Prior art keywords
layer
insulating layer
setting step
oxide semiconductor
gate
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Application number
PCT/CN2018/107927
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English (en)
Chinese (zh)
Inventor
刘兆松
任章淳
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深圳市华星光电技术有限公司
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Publication of WO2020047916A1 publication Critical patent/WO2020047916A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a method for manufacturing a backplane, and in particular, to an organic light-emitting diode (Organic Light-Emitting Diode, An OLED) driving backplane manufacturing method can reduce the number of photomasks used, reduce the cost of the photomask, and further reduce the overall cost of the organic light emitting diode driving backplane.
  • an organic light-emitting diode Organic Light-Emitting Diode, An OLED
  • organic light emitting diode display panels Compared with liquid crystal display panels, organic light emitting diode display panels have many advantages such as high saturation, low power consumption, and no need for a backlight module, so they have gradually become the mainstream technology in the field of display panels.
  • the present inventor has a shortcoming of the manufacturing cost of the existing organic light emitting diode driving backplane in view of the disadvantage that the existing organic light emitting diode driving backplane is too high.
  • a method for manufacturing an organic light emitting diode driving backplane is created.
  • the main purpose of the present invention is to provide a method for manufacturing an organic light emitting diode driving backplane, which can reduce the number of photomasks used, reduce the cost of the photomask, and further reduce the overall cost of the organic light emitting diode driving backplane.
  • the present invention provides a method for manufacturing an organic light emitting diode driving backplane, including:
  • a color filter setting step including manufacturing a color filter on a substrate, wherein the color filter is used as a part of a light emitting area;
  • a buffer layer setting step comprising depositing a buffer layer on the substrate and the color filter
  • An oxide semiconductor layer setting step includes depositing an oxide semiconductor layer on the buffer layer;
  • a gate setting step includes depositing a gate insulating layer on the buffer layer and the oxide semiconductor layer, and then depositing a gate metal layer on the gate insulating layer;
  • a yellow light processing step includes setting a photoresist layer on the gate metal layer, using a yellow light to define a pattern on the photoresist layer, and etching the gate metal layer and the substrate according to the pattern. Mentioned gate insulating layer;
  • a plasma treatment step includes performing plasma treatment on a portion of the oxide semiconductor layer exposed outside the gate insulating layer and the gate metal layer to reduce the resistance thereof and to make the exposed oxide A part of the semiconductor layer forms an N + conductor layer as an anode;
  • the interlayer insulating layer setting step includes depositing an interlayer insulating layer on the N + conductor layer, the gate insulating layer and the gate metal layer, and forming two contact holes in the interlayer insulating layer. ;
  • a source-drain metal layer setting step includes depositing a source-drain metal layer on the interlayer insulating layer, and forming a source and a drain using the source-drain metal layer, wherein the source The electrode and the drain are respectively located in the two contact holes;
  • a passivation layer setting step includes depositing a passivation layer on the interlayer insulating layer, the source electrode and the drain electrode, and etching the passivation layer to form an active region, wherein the anode is exposed. In the active area;
  • An organic light emitting diode setting step including setting an organic light emitting diode to the anode in the active region;
  • a cathode setting step includes setting a cathode on the active region, wherein the cathode covers the organic light emitting diode.
  • the thickness of the metal oxide semiconductor layer is 100-1000 ⁇ .
  • the gate insulating layer is made of silicon oxide (SiOx) or silicon nitride (SiNx),
  • the gate insulating layer is a multilayer film.
  • the thickness of the gate insulating layer is 1000-3000 ⁇ .
  • the gate metal layer is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy thereof.
  • the thickness of the gate metal layer is 2000-8000 ⁇ .
  • the interlayer insulating layer is made of SiOx or SiNx.
  • the interlayer insulating layer is a multilayer film.
  • the thickness of the interlayer insulating layer is 2000-10000 ⁇ .
  • the source / drain metal layer is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy thereof.
  • the source-drain metal layer has a thickness of 2000-8000 ⁇ .
  • the passivation layer is made of SiOx or SiNx.
  • the thickness of the passivation layer is 1000-5000 ⁇ .
  • the organic light emitting diode is disposed by a vapor deposition process or an inkjet printing process.
  • the organic light emitting diode is a white light organic light emitting diode.
  • Another object of the present invention is to provide a method for manufacturing an organic light emitting diode driving backplane, including:
  • a color filter setting step including manufacturing a color filter on a substrate, wherein the color filter is used as a part of a light emitting area;
  • a buffer layer setting step comprising depositing a buffer layer on the substrate and the color filter
  • An oxide semiconductor layer setting step includes depositing an oxide semiconductor layer on the buffer layer;
  • a gate setting step includes depositing a gate insulating layer on the buffer layer and the oxide semiconductor layer, and then depositing a gate metal layer on the gate insulating layer;
  • a yellow light processing step includes setting a photoresist layer on the gate metal layer, using a yellow light to define a pattern on the photoresist layer, and etching the gate metal layer and the substrate according to the pattern. Mentioned gate insulating layer;
  • a plasma processing step includes performing plasma treatment on a portion of the oxide semiconductor layer exposed outside the gate insulating layer and the gate metal layer to reduce its resistance, and to expose the exposed oxide semiconductor A part of the layer forms an N + conductor layer as an anode;
  • the interlayer insulating layer setting step includes depositing an interlayer insulating layer on the N + conductor layer, the gate insulating layer and the gate metal layer, and forming two contact holes in the interlayer insulating layer. ;
  • a source-drain metal layer setting step includes depositing a source-drain metal layer on the interlayer insulating layer, and forming a source and a drain using the source-drain metal layer, wherein the source The electrode and the drain are respectively located in the two contact holes;
  • a passivation layer setting step includes depositing a passivation layer on the interlayer insulating layer, the source electrode and the drain electrode, and etching the passivation layer to form an active region, wherein the anode is exposed. In the active area;
  • An organic light emitting diode setting step including setting an organic light emitting diode element to the anode in the active region;
  • a cathode setting step including setting a cathode on the active region, wherein the cathode covers the organic light emitting diode element;
  • the color filter setting step includes making a black matrix on the substrate, and the buffer layer setting step includes depositing the buffer layer on the substrate, the black matrix, and the color filter;
  • the oxide semiconductor layer includes a metal oxide semiconductor layer, and the material of the metal oxide semiconductor layer is selected from the group consisting of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide.
  • the thickness of the oxide semiconductor layer is 100-1000 ⁇ .
  • the gate insulating layer is made of silicon oxide (SiOx) or silicon nitride (SiNx),
  • the gate insulating layer is a multilayer film.
  • the thickness of the gate insulating layer is 1000-3000 ⁇ .
  • the gate metal layer is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy thereof.
  • the thickness of the gate metal layer is 2000-8000 ⁇ .
  • the interlayer insulating layer is made of SiOx or SiNx.
  • the present invention includes the following advantages:
  • the present invention uses a thin film transistor (TFT) on Color filter (CF), TOC) process, and the transparent oxide semiconductor layer is directly used as the anode, reducing the photomask to 8-9 sheets, reducing the cost of the photomask, and reducing the use of two layers of organic photoresist , Effectively reducing the cost of materials.
  • TFT thin film transistor
  • CF Color filter
  • TOC transparent oxide semiconductor layer
  • the anode can be manufactured by IGZTO. Because IGZTO is not only used as an anode material for organic light emitting diodes, but also as an active layer material for TFTs, a yellow light etching process for anode fabrication is omitted. At the same time, the present invention omits two processes of the flattening layer and the pixel definition layer of the traditional process, and saves three photomasks, which reduces the cost of the photomask and the cost of materials.
  • the color filter setting step includes making a black matrix on the substrate, and the buffer layer setting step includes depositing the buffer layer on the substrate, the black matrix, and the substrate. Mentioned color filters.
  • the oxide semiconductor layer includes a metal oxide semiconductor layer, and the material of the metal oxide semiconductor layer is selected from the group consisting of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide. Group.
  • FIG. 1 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to a color filter setting step of a method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 2 is a side sectional view of a semi-finished organic light emitting diode driving backplane corresponding to a buffer layer setting step and an oxide semiconductor layer setting step corresponding to a method for manufacturing an organic light emitting diode driving backplane of the present invention.
  • FIG. 3 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to a gate setting step of a method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 4 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to the yellow light processing step of the method for manufacturing an organic light emitting diode driving backplane according to the present invention, wherein a photoresist layer is disposed on the gate metal layer.
  • FIG. 5 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to a yellow light processing step and a plasma processing step corresponding to a method for manufacturing an organic light emitting diode driving backplane according to the present invention, wherein the gate metal layer and the substrate are etched according to a pattern The gate insulation layer is described.
  • FIG. 6 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to the interlayer insulating layer setting step of the method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 7 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to a step of setting a source-drain metal layer of a method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 8 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to the passivation layer setting step of the method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 9 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to an organic light emitting diode setting step of a method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 10 is a side cross-sectional view of a semi-finished organic light emitting diode driving backplane corresponding to a cathode setting step of a method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 11 is a flowchart of steps in a method for manufacturing an organic light emitting diode driving backplane according to the present invention.
  • FIG. 12 is a flowchart of steps in a method for manufacturing an organic light emitting diode-driven backplane according to the present invention, wherein the steps are subsequent to the steps in FIG. 11.
  • a method for manufacturing an organic light-emitting diode (OLED) driving backplane of the present invention includes: a color filter setting step S01, a buffer layer setting step S02, a An oxide semiconductor layer setting step S03, a gate setting step S04, a yellow light processing step S05, a plasma processing step S06, an interlayer insulating layer setting step S07, a source / drain metal layer setting step S08, a A passivation layer setting step S09, an organic light emitting diode setting step S10, and a cathode setting step S11.
  • the color filter setting step S01 includes fabricating a color filter CF on a substrate SB, where the color filter CF is used as a part of a light emitting area.
  • the substrate SB is a glass substrate.
  • the color filter setting step S01 includes making a black matrix (Black) on the substrate.
  • Matrix) BM The black matrix BM prevents light leakage and color mixing of the color filter CF on the one hand, and can be used for thin film transistors (Thin) on the other hand. Film Transistor (TFT).
  • TFT Film Transistor
  • the buffer layer setting step S02 includes depositing a buffer layer BF on the substrate SB and the color filter CF.
  • the buffer layer setting step S02 includes depositing the buffer layer on the substrate, the black matrix BM, and the color filter CF.
  • the step of setting the oxide semiconductor layer S03 includes depositing an oxide semiconductor layer OX on the buffer layer BF.
  • the gate setting step S04 includes depositing a gate insulating layer GI on the buffer layer BF and the oxide semiconductor layer OX, and then depositing a gate metal layer GE on the gate insulation.
  • Layer GI In one embodiment of the present invention, the gate insulating layer GI is made of silicon oxide (SiOx) or silicon nitride (SiNx). Alternatively, the gate insulating layer GI is a multilayer film. The thickness of the gate insulating layer GI is 1000-3000 ⁇ . In an embodiment of the present invention, the gate metal layer GE is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy thereof. The thickness of the gate metal layer GE is 2000-8000 ⁇ .
  • the yellow light processing step S05 includes setting a photoresist layer PR on the gate metal layer GE, using a yellow light to define a pattern on the photoresist layer PR, and according to The pattern etches the gate metal layer GE and the gate insulating layer GI.
  • the plasma processing step S06 includes performing plasma treatment on a portion of the oxide semiconductor layer OX exposed outside the gate insulating layer GI and the gate metal layer GE to reduce its resistance and expose the exposed portion.
  • a part of the oxide semiconductor layer OX forms an N + conductor layer N as an anode.
  • a portion of the anode located below the gate insulation layer GI is not treated with plasma to maintain semiconductor characteristics and serves as a TFT channel.
  • the oxide semiconductor layer OX includes a metal oxide semiconductor layer, and the material of the metal oxide semiconductor layer is selected from the group consisting of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide.
  • the thickness of the metal oxide semiconductor layer OX is 100-1000 ⁇ .
  • the interlayer insulation layer setting step S07 includes depositing an interlayer insulation layer IL (Interlayer Dielectric, ILD) to the N + conductor layer N, the gate insulation layer GI, and the gate metal layer. GE and two contact holes H are formed in the interlayer insulating layer IL.
  • the interlayer insulating layer IL is made of silicon oxide (SiOx) or silicon nitride (SiNx).
  • the interlayer insulating layer IL is a multilayer film. The thickness of the interlayer insulation layer IL is 2000-10000 ⁇ .
  • the source-drain metal layer setting step S08 includes depositing a source-drain metal layer on the interlayer insulation layer IL, and forming a source (Source) from the source-drain metal layer. Electrode) S and a drain electrode (Drain Electrode) D, wherein the source electrode S and the drain electrode D are respectively located in the two contact holes H.
  • the source / drain metal layer is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy thereof.
  • the source-drain metal layer has a thickness of 2000-8000 ⁇ .
  • the passivation layer setting step S09 includes depositing a passivation (PV) layer PV to the interlayer dielectric (IL), the source S, and the drain D. And etching the passivation layer PV to form an active area, wherein the anode is exposed in the active area.
  • the passivation layer PV is made of silicon oxide (SiOx) or silicon nitride (SiNx).
  • the passivation layer has a PV thickness of 1000-5000 ⁇ .
  • the organic light emitting diode setting step S10 includes setting an organic light emitting diode OL to the anode in the active area.
  • the cathode setting step S11 includes setting a cathode CA to the active area, wherein the cathode CA covers the organic light emitting diode OL.
  • the organic light emitting diode OL may be a white light organic light emitting diode OL.
  • the organic light emitting diode OL may be provided by a vapor deposition process or an inkjet printing process.
  • the present invention includes the following advantages:
  • the present invention uses a thin film transistor (Thin film) on a color filter CF.
  • transistor (TFT) on Color filter (CF), TOC) process and the transparent oxide semiconductor layer OX is used as the anode directly to reduce the photomask to 8-9 sheets, reducing the cost of the photomask and reducing
  • the use of two-layer organic photoresist effectively reduces the cost of materials.
  • the anode can be manufactured by IGZTO. Since IGZTO is not only used as an anode material for organic light emitting diode OL, but also as an active layer material for TFT, a yellow light etching process for anode fabrication is omitted. At the same time, the present invention omits two processes of the flattening layer and the pixel definition layer of the traditional process, and saves three photomasks, which reduces the cost of the photomask and the cost of materials.
  • the black matrix BM not only plays a role in blocking the light leakage of the color filter CF, but also serves as a light shielding layer of the TFT, reducing the production of a light shielding layer.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une plaque de fond de pilote de diode électroluminescente organique, comprenant : une étape de fourniture de filtre coloré, une étape de fourniture de couche tampon, une étape de fourniture de couche semi-conductrice d'oxyde, une étape de fourniture d'électrode de grille, une étape de traitement de lumière jaune, une étape de traitement au plasma, une étape de fourniture de couche isolante intercalaire, une étape de fourniture de couche métallique d'électrode de source/drain, une étape de fourniture de couche de passivation, une étape de fourniture de diode électroluminescente organique et une étape de fourniture de cathode. Le procédé de fabrication mentionné ci-dessus utilise un procédé d'agencement d'un transistor à couches minces sur un filtre coloré, et utilise directement une couche semi-conductrice d'oxyde transparente comme anode, ce qui permet de réduire le nombre de masques photographiques et de réduire efficacement son coût matériel.
PCT/CN2018/107927 2018-09-06 2018-09-27 Procédé de fabrication de plaque de fond de pilote de diode électroluminescente organique WO2020047916A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811039263.8A CN109244276A (zh) 2018-09-06 2018-09-06 有机发光二极管驱动背板制造方法
CN201811039263.8 2018-09-06

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WO2020047916A1 true WO2020047916A1 (fr) 2020-03-12

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
GB2614387A (en) * 2021-12-30 2023-07-05 Lg Display Co Ltd Organic light emitting display device and organic light emitting display panel

Families Citing this family (2)

* Cited by examiner, † Cited by third party
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CN109817578A (zh) * 2019-02-27 2019-05-28 深圳市华星光电半导体显示技术有限公司 有机发光二极管背板的制作方法
CN114864636A (zh) * 2022-03-24 2022-08-05 深圳市华星光电半导体显示技术有限公司 Oled显示面板及其制作方法

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CN107293555A (zh) * 2017-06-19 2017-10-24 深圳市华星光电技术有限公司 底发射型白光oled面板的制作方法及其结构
CN107293554A (zh) * 2017-06-19 2017-10-24 深圳市华星光电技术有限公司 顶发射型oled面板的制作方法及其结构
CN107680993A (zh) * 2017-10-23 2018-02-09 深圳市华星光电半导体显示技术有限公司 Oled面板及其制作方法
CN107946345A (zh) * 2017-11-22 2018-04-20 京东方科技集团股份有限公司 彩膜基板及其制备方法以及显示装置

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CN107293555A (zh) * 2017-06-19 2017-10-24 深圳市华星光电技术有限公司 底发射型白光oled面板的制作方法及其结构
CN107293554A (zh) * 2017-06-19 2017-10-24 深圳市华星光电技术有限公司 顶发射型oled面板的制作方法及其结构
CN107680993A (zh) * 2017-10-23 2018-02-09 深圳市华星光电半导体显示技术有限公司 Oled面板及其制作方法
CN107946345A (zh) * 2017-11-22 2018-04-20 京东方科技集团股份有限公司 彩膜基板及其制备方法以及显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2614387A (en) * 2021-12-30 2023-07-05 Lg Display Co Ltd Organic light emitting display device and organic light emitting display panel

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