WO2020044862A1 - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
WO2020044862A1
WO2020044862A1 PCT/JP2019/028665 JP2019028665W WO2020044862A1 WO 2020044862 A1 WO2020044862 A1 WO 2020044862A1 JP 2019028665 W JP2019028665 W JP 2019028665W WO 2020044862 A1 WO2020044862 A1 WO 2020044862A1
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Prior art keywords
substrate
processing
tank
liquid
etching
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PCT/JP2019/028665
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French (fr)
Japanese (ja)
Inventor
侑二 山口
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株式会社Ｓｃｒｅｅｎホールディングス
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Priority to CN201980056746.5A priority Critical patent/CN112640059A/en
Priority to KR1020217008176A priority patent/KR102526831B1/en
Publication of WO2020044862A1 publication Critical patent/WO2020044862A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

Definitions

  • the present invention relates to a substrate processing method and a substrate processing apparatus.
  • the substrate processing apparatus described in Patent Document 1 includes a wet processing unit.
  • the wet processing unit performs a wet etching process.
  • the wet etching process includes a wafer loading process, a rotation start process, a natural oxide film removing process, a first rinsing process, a sacrificial film pre-etching process, a second rinsing process, and a drying process. And a wafer unloading step.
  • DHF dilute hydrofluoric acid
  • a rinsing liquid is supplied to the surface of the wafer to wash away residues of the native oxide film.
  • an etchant is supplied to the surface of the wafer to remove a part of the sacrificial film from the wafer. Specifically, a pattern including a concave portion is formed on the surface of the wafer.
  • an etchant is made to enter the concave portion to remove a part of the sacrifice film formed between the pattern and the silicon substrate. Then, a second rinsing step, a drying step, and a wafer unloading step are performed.
  • the rinsing liquid supplied in the first rinsing step may remain in the concave portions of the pattern formed on the surface of the wafer.
  • the pattern formed on the substrate has been miniaturized, and the aspect ratio of the pattern (the ratio of the depth to the width of the concave portion) has been increased, and the shape of the pattern has been complicated. Therefore, if the etching liquid is supplied to the concave portions while the rinsing liquid remains in the concave portions of the pattern, a concentration gradient may be generated in the etching liquid in the depth direction of the concave portions due to the influence of the rinsing liquid. Specifically, at the beginning of the supply of the etching liquid, the concentration of the etching liquid may decrease from a shallow position to a deep position of the concave portion.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing a decrease in an etching effect on a substrate.
  • a substrate having a pattern including a concave portion is processed.
  • the substrate processing method includes: a processing step of processing the substrate with a processing liquid; a removing step of removing the processing liquid entering the recess from the substrate after the processing step; and With an etching solution.
  • the substrate processing method of the present invention it is preferable that in the removing step, the substrate is dried to remove the processing liquid that has entered the recess.
  • the processing step includes a chemical processing step of processing the substrate with a chemical liquid, and a rinsing step of washing the chemical liquid from the substrate with a rinsing liquid as the processing liquid.
  • a natural oxide film formed on the substrate is removed by the chemical solution.
  • the processing step, the removing step, and the etching step are performed inside the substrate processing apparatus without taking the substrate out of a substrate processing apparatus including a plurality of tanks. It is preferably a series of steps.
  • a vapor of a water-soluble organic solvent is supplied into a tank in which the substrate is housed among the plurality of tanks, and the pressure in the tank is reduced by depressurizing the inside of the tank.
  • the substrate is dried.
  • the processing step, the removing step, and the etching step are performed in the same tank.
  • the substrate is processed by supplying the processing liquid to the substrate while rotating the substrate in a chamber.
  • the processing liquid entering the concave portion is removed while rotating the substrate in the chamber.
  • the etching step it is preferable that the substrate is etched by supplying the etching liquid to the substrate while rotating the substrate in the chamber.
  • the etching solution contains tetramethylammonium hydroxide.
  • a substrate processing apparatus processes a substrate having a pattern including a concave portion.
  • the substrate processing apparatus includes a processing unit that processes the substrate.
  • the processing unit processes the substrate with a processing liquid.
  • the processing unit removes the processing liquid that has entered the recess from the substrate after processing the substrate with the processing liquid.
  • the processing unit etches the substrate with an etching liquid after removing the processing liquid from the substrate.
  • the present invention it is possible to provide a substrate processing method and a substrate processing apparatus capable of suppressing a decrease in an etching effect on a substrate.
  • FIG. 1 is a schematic plan view illustrating a substrate processing apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a schematic sectional view illustrating a tank of the substrate processing apparatus according to the first embodiment.
  • FIG. 3 is a schematic sectional view illustrating another tank of the substrate processing apparatus according to the first embodiment.
  • FIG. 2A is a schematic cross-sectional view illustrating a first state of a substrate processed by the substrate processing apparatus according to the first embodiment.
  • (B) is a schematic sectional view showing a second state of the substrate.
  • (C) is a schematic sectional view showing a third state of the substrate.
  • 4 is a flowchart illustrating a substrate processing method according to the first embodiment.
  • FIG. 4 is a schematic sectional view illustrating a substrate processing apparatus according to a second embodiment of the present invention.
  • 9 is a flowchart illustrating a substrate processing method according to a second embodiment.
  • the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
  • the substrate processing apparatus 100 is of a batch type. Therefore, the substrate processing apparatus 100 processes a plurality of substrates W collectively. Specifically, the substrate processing apparatus 100 processes a plurality of lots. Each of the plurality of lots includes a plurality of substrates W. For example, one lot includes 25 substrates W.
  • the substrate W is, for example, substantially disk-shaped.
  • the substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Emission Display: FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, and a photomask.
  • a substrate for a liquid crystal display device a substrate for a plasma display
  • FED Field Emission Display
  • the semiconductor wafer has, for example, a pattern for forming a three-dimensional flash memory (for example, a three-dimensional NAND flash memory).
  • FIG. 1 is a schematic plan view showing the substrate processing apparatus 100.
  • the substrate processing apparatus 100 includes a plurality of storage units 1, a loading unit 3, a payout unit 7, a delivery mechanism 11, a buffer unit BU, a transport mechanism CV, and a processing unit SP1.
  • the processing unit SP1 includes a plurality of tanks TA.
  • the transport mechanism CV includes a first transport mechanism CTC, a second transport mechanism WTR, a sub transport mechanism LF1, a sub transport mechanism LF2, and a sub transport mechanism LF3.
  • the processing unit SP1 includes a drying processing unit 17, a first processing unit 19, a second processing unit 20, and a third processing unit 21.
  • the drying processing unit 17 includes a tank LPD1 and a tank LPD2 among the plurality of tanks TA.
  • the first processing unit 19 includes a tank ONB1 and a tank CHB1 among the plurality of tanks TA.
  • the second processing unit 20 includes a tank ONB2 and a tank CHB2 among the plurality of tanks TA.
  • the third processing unit 21 includes a tank ONB3 and a tank CHB3 among the plurality of tanks TA.
  • Each of the plurality of storage units 1 stores a plurality of substrates W. Each substrate W is stored in the storage unit 1 in a horizontal posture.
  • the storage unit 1 is, for example, a FOUP (Front Opening Unified Pod).
  • the storage unit 1 for storing an unprocessed substrate W is placed on the input unit 3.
  • the loading section 3 includes a plurality of mounting tables 5. Then, the two storage sections 1 are respectively mounted on the two mounting tables 5.
  • the loading section 3 is arranged at one end in the longitudinal direction of the substrate processing apparatus 100.
  • the storage unit 1 that stores the processed substrate W is placed on the payout unit 7.
  • the payout unit 7 includes a plurality of mounting tables 9. Then, the two storage units 1 are respectively mounted on the two mounting tables 9.
  • the payout unit 7 stores the processed substrate W in the storage unit 1 and pays out the entire storage unit 1.
  • the payout unit 7 is disposed at one end in the longitudinal direction of the substrate processing apparatus 100.
  • the payout unit 7 faces the input unit 3 in a direction orthogonal to the longitudinal direction of the substrate processing apparatus 100.
  • the buffer unit BU is arranged adjacent to the input unit 3 and the payout unit 7.
  • the buffer unit BU takes in the storage unit 1 placed in the input unit 3 together with the substrate W and places the storage unit 1 on a shelf (not shown).
  • the buffer unit BU receives the processed substrate W, stores it in the storage unit 1, and places the storage unit 1 on a shelf.
  • the transfer mechanism 11 is arranged in the buffer unit BU.
  • the delivery mechanism 11 delivers the storage unit 1 between the input unit 3 and the payout unit 7 and the shelf.
  • the transfer mechanism 11 transfers only the substrate W between the transfer mechanism 11 and the transport mechanism CV. Specifically, the transfer mechanism 11 transfers a lot between the transfer mechanism 11 and the transport mechanism CV.
  • the transport mechanism CV loads and unloads lots from and to the processing unit SP1. Specifically, the transport mechanism CV carries in / out the lot to / from each of the tanks TA of the processing unit SP1.
  • the processing unit SP1 processes each substrate W of the lot.
  • the transfer mechanism 11 transfers a lot between the transfer mechanism 11 and the first transfer mechanism CTC of the transfer mechanism CV.
  • the first transfer mechanism CTC transfers the lot to the second transfer mechanism WTR after converting the attitude of the plurality of substrates W of the lot received from the transfer mechanism 11 from the horizontal attitude to the vertical attitude. Further, after receiving the processed lot from the second transport mechanism WTR, the first transport mechanism CTC converts the attitude of the plurality of substrates W of the lot from a vertical attitude to a horizontal attitude, and sends the lot to the lot transfer mechanism 11. Hand over.
  • the second transport mechanism WTR is movable along the longitudinal direction of the substrate processing apparatus 100 from the drying processing section 17 of the processing section SP1 to the third processing section 21. Therefore, the second transport mechanism WTR loads and unloads the lot from the drying processing unit 17, the first processing unit 19, the second processing unit 20, and the third processing unit 21.
  • the drying unit 17 performs a drying process on the lot. Specifically, each of the tanks LPD1 and LPD2 of the drying processing unit 17 stores a lot and performs a drying process on a plurality of substrates W in the lot.
  • the second transport mechanism WTR loads and unloads lots from and into each of the tank LPD1 and the tank LPD2.
  • the first processing unit 19 is arranged adjacent to the drying processing unit 17.
  • the tank ONB1 of the first processing unit 19 performs pretreatment with a chemical solution on a plurality of substrates W of the lot.
  • the pretreatment is a treatment with a chemical solution performed before the etching treatment (specifically, the wet etching treatment).
  • the chemical solution is, for example, dilute hydrofluoric acid (DHF: Diluted hydrofluoric acid).
  • DHF Diluted hydrofluoric acid
  • the tank ONB1 performs a cleaning process using a rinsing liquid on a plurality of substrates W of the lot.
  • the rinsing liquid is an example of the cleaning liquid.
  • the cleaning process if the substrate W is immersed in the rinsing liquid, the substrate W is cleaned over time, but after a certain time, the cleaning effect becomes saturated.
  • the rinsing liquid is, for example, any of pure water (DIW: Deionized Water), carbonated water, electrolytic ionic water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). Pure water is deionized water.
  • the type of the rinsing liquid used in the cleaning process is not particularly limited as long as the cleaning process can be performed on the substrate W.
  • the tank ONB1 performs an etching process on the plurality of substrates W of the lot using an etchant. That is, the tank ONB1 performs the wet etching process on the plurality of substrates W of the lot. In the etching process, as long as the substrate W is immersed in the etching solution, the etching amount increases as the time elapses, and the etching amount does not become saturated.
  • the etchant is, for example, an alkaline etchant or an acidic etchant.
  • the alkaline etching solution is, for example, an aqueous solution containing tetramethylammonium hydroxide (TMAH), an aqueous solution containing trimethyl-2-hydroxyethylammonium hydroxide (TMY), or ammonium hydroxide (aqueous ammonia).
  • the acidic etching solution is, for example, phosphoric acid or a mixed acid. Note that the type of the etchant used in the etching process is not particularly limited as long as the etching process can be performed on the substrate W.
  • the tank CHB1 has the same configuration as the tank ONB1, and performs the same processing as the tank ONB1.
  • the sub-transport mechanism LF1 of the transport mechanism CV transfers the lot to and from the second transport mechanism WTR in addition to the transport of the lot in the first processing unit 19.
  • the sub-transport mechanism LF1 immerses the lot in the tank ONB1 or the tank CHB1, or lifts the lot from the tank ONB1 or the tank CHB1.
  • a second processing unit 20 is arranged adjacent to the first processing unit 19.
  • Each of the tank ONB2 and the tank CHB2 of the second processing unit 20 has the same configuration as the tank ONB1, and performs the same processing as the tank ONB1.
  • the sub-transport mechanism LF2 of the transport mechanism CV transfers the lot to and from the second transport mechanism WTR in addition to the transport of the lot in the second processing unit 20. Further, the sub-transport mechanism LF2 immerses the lot in the tank ONB2 or CHB2 or lifts the lot from the tank ONB2 or CHB2.
  • a third processing unit 21 is arranged adjacent to the second processing unit 20.
  • Each of the tank ONB3 and the tank CHB3 of the third processing unit 21 has the same configuration as the tank ONB1, and performs the same processing as the tank ONB1.
  • the sub-transport mechanism LF3 of the transport mechanism CV transfers the lot to and from the second transport mechanism WTR in addition to the transport of the lot in the third processing unit 21. Further, the sub-transport mechanism LF3 immerses the lot in the tank ONB3 or the tank CHB3, or lifts the lot from the tank ONB3 or the tank CHB3.
  • the transport mechanism CV is provided for each of the tanks TA (the tanks LPD1, the LPD2, the tanks ONB1 to ONB3, and the tanks CHB1 to CHB3) of the processing unit SP1. Lots can be loaded and unloaded. Each of the plurality of tanks TA can process a lot.
  • each of the “chemical solution” used in the pretreatment and the “rinse solution” used in the cleaning process correspond to an example of the “treatment solution”.
  • FIG. 2 is a schematic sectional view showing the tank ONB1.
  • the tank ONB1 includes a processing tank 41, a collection tank 43, and a plurality of nozzles 45.
  • the sub-transport mechanism LF1 includes a plurality of holding rods 40.
  • the substrate processing apparatus 100 includes a chemical solution supply source 23, a valve 24, a rinse solution supply source 25, a valve 26, an etchant supply source 27, a valve 28, a drainage drain 29, a pipe 31, and a pipe 33. And further comprising:
  • the processing tank 41 is a container that can store a chemical solution, a rinsing liquid, or an etching liquid.
  • a chemical solution, a rinsing solution, or an etching solution is stored at different time zones.
  • the processing tank 41 performs pre-processing on the substrate W by immersing the substrate W in a chemical solution.
  • the chemical solution for performing the pretreatment is DHF.
  • the processing tank 41 performs a cleaning process on the substrate W by immersing the substrate W in a rinsing liquid.
  • the rinsing liquid used in the cleaning process is DIW.
  • the processing tank 41 performs an etching process on the substrate W by immersing the substrate W in an etchant.
  • the etching solution used in the etching process is an aqueous solution containing TMAH.
  • the upper part of the processing tank 41 is open. Then, a chemical solution, a rinsing solution, or an etching solution can overflow from the opening.
  • a collection tank 43 is provided around the upper end of the processing tank 41. Then, the chemical solution, the rinsing solution, or the etching solution overflowing from the opening of the processing tank 41 flows into the recovery tank 43 and is stored therein.
  • the collection tank 43 and the drainage drain 29 are connected by a pipe 33. Therefore, the chemical, rinse, or etchant that has flowed into the recovery tank 43 is discharged to the drain 29 via the pipe 33.
  • the plurality of nozzles 45 are arranged inside the processing tank 41.
  • the plurality of nozzles 45 are connected to the pipe 31.
  • a valve 24, a valve 26, and a valve 28 are inserted into the pipe 31.
  • the pipe 31 is connected to the chemical supply source 23 via the valve 24. Therefore, when the valve 24 is opened and the valves 26 and 28 are closed, the chemical is supplied from the chemical supply source 23 to the plurality of nozzles 45 via the pipe 31. As a result, the plurality of nozzles 45 discharge the chemical solution to the processing tank 41.
  • the pipe 31 is connected to the rinse liquid supply source 25 via the valve 26. Therefore, when the valve 26 is opened and the valves 24 and 28 are closed, the rinsing liquid is supplied from the rinsing liquid supply source 25 to the plurality of nozzles 45 via the pipe 31. As a result, the plurality of nozzles 45 discharge the rinsing liquid to the processing tank 41.
  • the pipe 31 is connected to the etching liquid supply source 27 via the valve 28. Therefore, when the valve 28 is opened and the valves 24 and 26 are closed, the etching liquid is supplied from the etching liquid supply source 27 to the plurality of nozzles 45 via the pipe 31. As a result, the plurality of nozzles 45 discharge the etching liquid to the processing tank 41.
  • the plurality of holding rods 40 of the sub-transport mechanism LF1 hold the plurality of substrates W in a standing posture. Then, the sub-transport mechanism LF ⁇ b> 1 moves the plurality of substrates W held by the plurality of holding rods 40 between a position where the substrates W are immersed in the processing tank 41 and a position where the substrates W are pulled up from the processing tank 41.
  • the configuration of the sub-transport mechanism LF2 and the sub-transport mechanism LF3 is the same as the configuration of the sub-transport mechanism LF1.
  • FIG. 3 is a schematic sectional view showing the tank LPD1.
  • the tank LPD ⁇ b> 1 performs a drying process based on a reduced-pressure lifting drying method using a vapor of a water-soluble organic solvent.
  • the tank LPD1 includes a chamber 71, a processing tank 73, a recovery tank 75, an elevating mechanism 77, a plurality of nozzles 81, and a plurality of gas nozzles 83.
  • the elevating mechanism 77 includes a plurality of holding rods 79.
  • the substrate processing apparatus 100 further includes a gas supply mechanism 51, a decompression unit 53, a pure water supply source 55, a valve 57, a pipe 59, an exhaust line 61, a pipe 63, and a drain line 65.
  • the chamber 71 accommodates the processing tank 73, the recovery tank 75, the elevating mechanism 77, the plurality of nozzles 81, and the plurality of gas nozzles 83.
  • the chamber 71 includes a cover 71a.
  • the cover 71a is attached to the upper opening of the chamber 71.
  • the cover 71a can be opened and closed.
  • the processing tank 73 is a container that can store pure water (DIW).
  • the processing tank 73 rinses the substrate W with water by immersing the substrate W in pure water.
  • the plurality of nozzles 81 are arranged inside the processing tank 73.
  • the plurality of nozzles 81 are connected to the pipe 63.
  • a valve 57 is inserted into the pipe 63.
  • the pipe 63 is connected to a pure water supply source 55 via a valve 57. Therefore, when the valve 57 is opened, pure water is supplied from the pure water supply source 55 to the plurality of nozzles 81 via the pipe 63.
  • the plurality of nozzles 81 discharge pure water to the processing tank 73.
  • the pure water supply source 55 may be the rinse liquid supply source 25 shown in FIG.
  • a collection tank 75 is provided around the upper end of the processing tank 73. During the rinsing of the substrate W, pure water is continuously supplied from the plurality of nozzles 81 to the processing tank 73, and the pure water always overflows from the upper end of the processing tank 73. The overflowed pure water flows into the recovery tank 75, and is discharged from the drainage line 65 to the outside of the chamber 71.
  • the plurality of holding rods 79 of the elevating mechanism 77 hold the plurality of substrates W in a standing posture. Then, the elevating mechanism 77 moves the plurality of substrates W held by the plurality of holding rods 79 between a position where the substrates W are immersed in the processing tank 73 and a position where the substrates W are pulled up from the processing tank 73.
  • the plurality of gas nozzles 83 are arranged inside the chamber 71 and outside the processing tank 73. Specifically, the plurality of gas nozzles 83 are arranged inside the chamber 71 and above the processing tank 73. The plurality of gas nozzles 83 are connected to the pipe 59.
  • the gas supply mechanism 51 is connected to the pipe 59.
  • the gas supply mechanism 51 supplies a vapor of a water-soluble organic solvent to the plurality of gas nozzles 83 using an inert gas as a carrier gas. As a result, the gas nozzles 83 discharge the vapor of the organic solvent into the chamber 71.
  • the vapor of the water-soluble organic solvent is isopropyl alcohol (IPA).
  • the decompression unit 53 is connected to the chamber 71 via the exhaust line 61.
  • the pressure reducing unit 53 reduces the pressure in the chamber 71 to less than the atmospheric pressure by exhausting the gas in the chamber 71.
  • the pressure reducing unit 53 includes, for example, an exhaust pump.
  • the drying treatment method includes Step 1 to Step 6.
  • Step 1 The nozzle 81 discharges pure water, and the processing tank 73 stores the pure water.
  • Step 2 The elevating mechanism 77 immerses the substrate W in pure water contained in the processing tank 73, and the processing tank 73 rinses the substrate W with water.
  • Step 3 The gas nozzle 83 discharges the vapor of the organic solvent into the chamber 71 to form an atmosphere of the vapor of the organic solvent in the chamber 71.
  • ⁇ Step 4 The lifting mechanism 77 lifts the substrate W from the pure water in the processing tank 73 (substrate W indicated by a two-dot chain line in FIG. 3). Therefore, the substrate W is exposed to the atmosphere of the vapor of the organic solvent. As a result, the vapor of the organic solvent is condensed on the surface of the substrate W, and the organic solvent replaces water droplets adhering to the surface of the substrate W.
  • Step 5 The pure water in the treatment tank 73 is rapidly drained, and the gas nozzle 83 stops discharging the vapor of the organic solvent.
  • the pressure reducing unit 53 reduces the pressure in the chamber 71 to less than the atmospheric pressure by exhausting the gas in the chamber 71 from the exhaust line 61. As a result, the organic solvent condensed on the surface of the substrate W is completely evaporated, and the substrate W is dried.
  • the configuration of the tank LPD2 is the same as the configuration of the tank LPD1. Further, the drying process in the tank LPD1 and the tank LPD2 is not limited to the depressurized pull-up drying method as long as the substrate W can be dried.
  • the substrate W is dried by blowing hot air for drying at a predetermined temperature onto the substrate W.
  • the substrate W may be dried by raising the temperature of the atmosphere of the substrate W with a heater.
  • FIG. 4A is a schematic cross-sectional view showing a first state of the substrate W.
  • the first state indicates a state where the native oxide film 93 is formed on the substrate W.
  • FIG. 4B is a schematic cross-sectional view illustrating a second state of the substrate W.
  • the second state indicates a state in which the chemical liquid and the rinsing liquid have been removed from the substrate W.
  • FIG. 4C is a schematic sectional view showing a third state of the substrate W.
  • the third state indicates a state in which the substrate W has been etched by the etchant.
  • the substrate W has a silicon substrate 90 and a pattern PT.
  • the pattern PT is formed on the silicon substrate 90.
  • the pattern PT includes a laminated film 91 and one or more concave portions 92.
  • the stacked film 91 includes a plurality of polysilicon films P1 to PN (N is an integer of 2 or more) and a plurality of silicon oxide films O1 to ON (N is an integer of 2 or more).
  • the plurality of polysilicon films P1 to PN and the plurality of silicon oxide films O1 to ON are stacked along the thickness direction Dt of the substrate W such that the polysilicon film and the silicon oxide film are alternately replaced.
  • the thickness direction Dt indicates a direction substantially orthogonal to the surface of the silicon substrate 90.
  • the recess 92 is recessed from the outermost surface Ws of the substrate W toward the silicon substrate 90 along the thickness direction Dt of the substrate W.
  • the recess 92 penetrates the plurality of polysilicon films P1 to PN and the plurality of silicon oxide films O1 to ON in the thickness direction Dt of the substrate W.
  • the side surfaces of the polysilicon films P1 to PN and the side surfaces of the silicon oxide films O1 to ON are exposed at the side surface 92s of the concave portion 92.
  • the concave portion 92 may be a trench or a hole as long as it is concave from the outermost surface Ws of the substrate W, and is not particularly limited.
  • the substrate W to be processed by the substrate processing apparatus 100 has the pattern PT including one or more concave portions 92.
  • the substrate W to be processed by the substrate processing apparatus 100 is a substrate on which the pattern PT including the concave portion 92 has been formed by dry etching.
  • the natural oxide film 93 is formed on the surface layers of the polysilicon films P1 to PN and the surface layers of the silicon oxide films O1 to ON.
  • the two-dot chain line indicates the contour of the natural oxide film 93.
  • the natural oxide film 93 is removed from the substrate W by immersing the substrate W in DHF as a chemical solution. Then, the DHF is removed from the substrate W by the rinsing liquid, and the rinsing liquid is further removed from the substrate W.
  • the substrate W is immersed in TMAH as an etching solution, so that the poly-metal is removed as shown in FIG. 4 (c).
  • the silicon films P1 to PN are selectively etched.
  • a plurality of recesses R1 are formed on the side surface 92s of the concave portion 92.
  • Each of the plurality of recesses R1 is recessed along the surface direction Dp of the substrate W.
  • the plane direction Dp indicates a direction substantially perpendicular to the thickness direction Dt of the substrate W.
  • the processing liquid (the chemical liquid and the rinsing liquid) is removed from the substrate W before the etching processing. . That is, the processing liquid is removed from the concave portions 92 of the substrate W before the etching processing. Therefore, the etching liquid does not diffuse in the processing liquid based on the concentration gradient, but directly enters the concave portion 92 into which the processing liquid has not entered. As a result, even when a process in which the diffusion time is secured by the concentration gradient of the etchant is not defined, a decrease in the etching effect on the substrate W can be suppressed. That is, the etching of the target etching amount can be performed on the substrate W within the target time.
  • the etching liquid quickly enters the concave portion 92.
  • the aspect ratio of the pattern PT is the ratio of the depth in the thickness direction Dt to the width of the recess 92 in the plane direction Dp.
  • the present invention is particularly suitable for processing a substrate W having a pattern PT including a concave portion 92 that is deeper than a limit position of entry into the concave portion due to the flow of the processing liquid in the concave portion.
  • the etching liquid flows into a deep position of the concave portion 92 due to the flow of the etching liquid.
  • the throughput of processing the substrate W can be improved.
  • the throughput is the number of processed substrates W per unit time.
  • FIG. 5 is a flowchart showing a substrate processing method.
  • the substrate processing method includes steps S1 to S5.
  • the substrate processing method is executed by the substrate processing apparatus 100 and processes a plurality of substrates W.
  • the processing unit SP1 performs steps S1 to S5.
  • step S1 the processing unit SP1 processes a plurality of substrates W with a processing liquid.
  • the transport mechanism CV loads a plurality of substrates W into the tank ONB1 of the processing unit SP1. Then, the tank ONB1 immerses the plurality of substrates W in the processing liquid and processes the plurality of substrates W with the processing liquid.
  • Step S1 is an example of a “processing step”.
  • step S2 the processing unit SP1 removes the processing liquid that has entered the concave portions 92 of the plurality of substrates W from the plurality of substrates W.
  • the transport mechanism CV carries out the plurality of substrates W from the tank ONB1 and carries the plurality of substrates W into the tank LPD1.
  • the tank LPD1 dries the plurality of substrates W and removes the processing liquid that has entered the concave portions 92 of the plurality of substrates W. Therefore, according to the present embodiment, it is possible to easily remove the processing liquid that has entered the recess 92 by drying.
  • Step S2 corresponds to an example of a “removal step”. “After the step S1” corresponds to an example of “after processing the substrate W with the processing liquid”.
  • step S2 a vapor of a water-soluble organic solvent (IPA) is supplied to the tank LPD1 in which the substrate W is housed among the plurality of tanks TA to reduce the pressure in the tank LPD1.
  • the substrate W is dried. Therefore, the plurality of substrates W can be more effectively dried, and the processing liquid that has entered the concave portions 92 of the plurality of substrates W can be removed in a relatively short time.
  • IPA water-soluble organic solvent
  • step S3 the processing unit SP1 etches the plurality of substrates W with an etchant (TMAH).
  • TMAH etchant
  • the transport mechanism CV carries out the plurality of substrates W from the tank LPD1 and carries the plurality of substrates W into the tank CHB1. Then, the tank CHB1 immerses the plurality of substrates W in the etchant to etch the plurality of substrates W.
  • Step S3 is an example of an “etching step”. “After the step S2” corresponds to an example of “after the processing liquid is removed from the substrate W”.
  • step S4 the processing unit SP1 rinses the etching liquid from the substrate W with the rinse liquid.
  • the transport mechanism CV unloads the plurality of substrates W from the tank CHB1 and loads the plurality of substrates W into the tank ONB1. Then, the tank ONB1 immerses the plurality of substrates W in the rinsing liquid to wash away the etching liquid from the plurality of substrates W.
  • step S5 the processing unit SP1 dries the substrate W and removes the rinsing liquid from the substrate W.
  • the transport mechanism CV carries out the plurality of substrates W from the tank ONB1 and carries the plurality of substrates W into the tank LPD1. Then, the tank LPD1 dries the plurality of substrates W and removes the rinsing liquid from the plurality of substrates W.
  • the processing liquid is removed from the plurality of substrates W in step S2 before the etching process in step S3. That is, the processing liquid is removed from the concave portions 92 of the substrate W before the etching processing. Therefore, the etching liquid directly enters the recess 92 into which the processing liquid has not entered. As a result, a decrease in the etching effect on the plurality of substrates W can be suppressed.
  • steps S1 to S5 are performed inside the substrate processing apparatus 100 without the payout unit 7 discharging the substrate W being processed to the outside of the substrate processing apparatus 100 during the steps S1 to S5.
  • steps S1 to S5 are one batch process
  • the substrate processing apparatus 100 may execute a plurality of batch processes in parallel.
  • the first to third processing units 19 to 21 and the drying processing unit 17 are appropriately used.
  • the step S1 includes the step S11 and the step S12.
  • step S11 the processing unit SP1 performs pre-processing on a plurality of substrates W. Specifically, the processing unit SP1 processes the plurality of substrates W with a chemical (DHF).
  • Step S11 corresponds to an example of a “chemical solution step”.
  • the tank ONB1 immerses the plurality of substrates W in the chemical solution and processes the plurality of substrates W with the chemical solution.
  • step S11 the tank ONB1 removes the natural oxide film 93 formed on the plurality of substrates W using a chemical (DHF).
  • DHF a chemical
  • step S12 the processing unit SP1 rinses the chemicals from the plurality of substrates W with a rinsing liquid (DIW).
  • DIW rinsing liquid
  • Step S12 corresponds to an example of a “rinsing step”.
  • “Rinse liquid” corresponds to an example of “rinse liquid as a processing liquid”.
  • the tank ONB1 replaces the chemical used in step S11 with a rinsing liquid, immerses the plurality of substrates W in the rinsing liquid, and rinses the chemical from the plurality of substrates W with the rinsing liquid.
  • step S2 after step S12, the processing unit SP1 removes the rinsing liquid that has entered the concave portions 92 of the plurality of substrates W from the plurality of substrates W.
  • the rinsing liquid is removed from the concave portions 92 of the plurality of substrates W in step S2 before the etching process in step S3. Therefore, the etching liquid directly enters the recess 92 into which the rinsing liquid has not entered. As a result, a decrease in the etching effect on the plurality of substrates W can be suppressed.
  • Step S1 may include any one of step S11 and step S12.
  • the processing unit SP1 removes the chemical solution that has entered the concave portions 92 of the plurality of substrates W from the plurality of substrates W in step S2.
  • the tank LPD1 dries the plurality of substrates W and removes the chemical solution that has entered the concave portions 92 of the plurality of substrates W.
  • the present invention is particularly effective when the etchant used in step S3 is an alkaline etchant.
  • the valid reasons are as follows.
  • a natural oxide film cannot be removed with an alkaline etching solution, so it is necessary to remove the natural oxide film with a chemical solution (DHF) before the etching process. Therefore, before the etching process, there is a possibility that the chemical solution enters the concave portion 92 and a rinsing liquid for removing the chemical solution enters the concave portion 92. Therefore, it is particularly effective to remove the chemical solution and the rinsing solution from the concave portion 92 before the etching process in order to suppress a decrease in the etching effect.
  • DHF chemical solution
  • the present invention is particularly effective when the etchant used in step S3 is an etchant having a relatively high viscosity.
  • the valid reasons are as follows.
  • the etching liquid having a higher viscosity has a longer time to enter the deeper position of the concave portion 92 by diffusion. Longer than lower etchants. Therefore, when performing an etching process using an etching solution having a high viscosity, it is necessary to remove a processing solution such as a rinse solution before the etching process in order to suppress a decrease in the etching effect.
  • the present invention is particularly effective when an aqueous solution containing TMAH is used as an etching solution. This is because TMAH is alkaline and has relatively high viscosity.
  • the steps S1 (steps S11 and S12) to S5 include a plurality of steps of the substrate processing apparatus 100. Can be performed using any one of the tanks TA.
  • the tank ONB1 processes the plurality of substrates W with a chemical (DHF).
  • the tank ONB1 rinses the chemicals from the plurality of substrates W with a rinsing liquid (DIW).
  • the tank LPD1 dries the plurality of substrates W to remove the rinsing liquid from the concave portions 92 of the substrates W.
  • the tank ONB1 etches the plurality of substrates W with an etchant (TMAH).
  • TMAH etchant
  • the tank ONB1 rinses the etching liquid from the plurality of substrates W with the rinsing liquid.
  • step S5 the bath LPD1 dries the plurality of substrates W and removes the rinsing liquid from the plurality of substrates W.
  • steps S1 to S5 are executed in two tanks TA (tank ONB1 and tank LPD1). Therefore, the cost of the substrate processing apparatus 100 can be reduced as compared with the case where the tank TA is prepared for each of the steps S1 to S5. Further, control of loading and unloading of the substrate W by the transport mechanism CV can be simplified.
  • the chemical liquid supply source 23 and the etching liquid supply source 27 shown in FIG. 2 can be connected to the tank LPD1 shown in FIG.
  • the tank LPD1 processes the plurality of substrates W with a chemical (DHF).
  • the tank LPD1 rinses the chemicals from the plurality of substrates W with a rinsing liquid (DIW).
  • DIW rinsing liquid
  • the bath LPD1 dries the plurality of substrates W and removes the rinsing liquid from the concave portions 92 of the substrates W.
  • the bath LPD1 etches the plurality of substrates W with an etchant (TMAH).
  • TMAH etchant
  • step S4 the bath LPD1 rinses the etching liquid from the plurality of substrates W with a rinsing liquid.
  • step S5 the bath LPD1 dries the plurality of substrates W and removes the rinsing liquid from the plurality of substrates W.
  • steps S1 to S5 are executed in one tank LPD1. Therefore, the cost of the substrate processing apparatus 100 can be further reduced. Further, the control of loading and unloading of the substrate W by the transport mechanism CV can be further simplified.
  • Step S1, S2, and S3 shown in FIG. 5 may be executed in the same tank TA. This is because the presence of the unused tank TA can be suppressed, and the processing throughput of the substrate W can be improved. All of Step S1, Step S2, and Step S3 may be performed in the same tank TA. This is because the throughput of processing the substrate W can be further improved. Step S11 and step S12 may be executed in the same tank TA or may be executed in different tanks TA.
  • At least two or more of the steps S1 to S5 may be performed in the same tank TA. Further, all of the steps S1 to S5 may be executed in the same tank TA.
  • the plurality of substrates W can be dried as follows.
  • the transfer mechanism CV moves a plurality of substrates W from the tank TA (for example, the tank ONB1) that has performed the process of step S1 to another tank TA (for example, the tank CHB1) that performs the etching process of step S3.
  • An inert gas for example, nitrogen gas
  • Embodiment 2 A substrate processing apparatus 100A and a substrate processing method according to Embodiment 2 of the present invention will be described with reference to FIGS.
  • Embodiment 2 is mainly different from Embodiment 1 in that the substrate processing apparatus 100A according to Embodiment 2 is of a single-wafer type.
  • the single-wafer method is a method of processing the substrates W one by one.
  • differences between the second embodiment and the first embodiment will be mainly described.
  • FIG. 6 is a schematic sectional view showing the substrate processing apparatus 100A.
  • the substrate processing apparatus 100A includes a processing unit SP2.
  • the processing unit SP2 processes the substrate W by discharging the processing liquid onto the substrate W while rotating the substrate W.
  • the processing unit SP2 includes the chamber 105, the spin chuck 107, the spin motor 95, the nozzle 111, the nozzle moving unit 113, the nozzle 115, the nozzle 117, the nozzle moving unit 119, the fluid supply A unit 121 and a unit moving unit 126 are included.
  • the chamber 105 has a substantially box shape.
  • the chamber 105 houses the substrate W, the spin chuck 107, the spin motor 95, the nozzle 111, the nozzle moving unit 113, the nozzle 115, the nozzle 117, the nozzle moving unit 119, the fluid supply unit 121, and the unit moving unit 126.
  • the spin chuck 107 rotates while holding the substrate W. Specifically, the spin chuck 107 rotates the substrate W around the rotation axis AX1 while holding the substrate W horizontally in the chamber 105.
  • the spin chuck 107 includes a plurality of chuck members 170 and a spin base 171.
  • the plurality of chuck members 170 are provided on the spin base 171.
  • the plurality of chuck members 170 hold the substrate W in a horizontal posture.
  • the spin base 171 has a substantially disk shape and supports the plurality of chuck members 170 in a horizontal posture.
  • the spin motor 95 rotates the spin base 171 around the rotation axis AX1. Therefore, the spin base 171 rotates around the rotation axis AX1. As a result, the substrate W held by the plurality of chuck members 170 provided on the spin base 171 rotates around the rotation axis AX1.
  • the nozzle 111 discharges a chemical solution toward the substrate W while the substrate W is rotating.
  • the chemical is the same as the chemical according to the first embodiment described with reference to FIG.
  • the drug solution is DHF.
  • the nozzle moving unit 113 rotates around the rotation axis AX2 to move the nozzle 111 horizontally between the processing position of the nozzle 111 and the standby position.
  • the nozzle 115 discharges a rinsing liquid toward the substrate W while the substrate W is rotating.
  • the rinsing liquid is the same as the rinsing liquid according to the first embodiment described with reference to FIG.
  • the rinsing liquid is pure water (DIW).
  • the nozzle 117 discharges the etching liquid toward the substrate W.
  • the etchant is the same as the etchant according to the first embodiment described with reference to FIG.
  • the etching solution is an aqueous solution containing TMAH.
  • the nozzle moving unit 119 rotates around the rotation axis AX3 to horizontally move the nozzle 117 between the processing position of the nozzle 117 and the standby position.
  • the fluid supply unit 121 is located above the spin chuck 107.
  • the fluid supply unit 121 discharges nitrogen gas (N 2 ) from the discharge port 122a toward the substrate W.
  • the fluid supply unit 121 discharges the rinsing liquid from the discharge port 123a toward the substrate W.
  • the rinsing liquid is the same as the rinsing liquid according to the first embodiment described with reference to FIG.
  • the rinsing liquid is pure water (DIW).
  • DIW pure water
  • the fluid supply unit 121 discharges the vapor of the water-soluble organic solvent toward the substrate W from the discharge port 124a.
  • the vapor of the water-soluble organic solvent is the vapor of IPA.
  • the unit moving unit 126 raises or lowers the fluid supply unit 121 along the vertical direction.
  • the unit moving unit 126 moves down the fluid supply unit 121.
  • FIG. 7 is a flowchart showing the substrate processing method.
  • the substrate processing method includes steps S21 to S29.
  • the substrate processing method is executed by the substrate processing apparatus 100A, and processes the substrate W.
  • the processing unit SP2 performs steps S21 to S29.
  • a transport mechanism (not shown) carries one substrate W into the processing unit SP2.
  • step S22 the processing unit SP2 starts rotating the substrate W.
  • the spin chuck 107 starts rotating the substrate W.
  • step S23 the processing unit SP2 supplies the processing liquid to the substrate W while rotating the substrate W in the chamber 105, and processes the substrate W with the processing liquid.
  • Step S23 corresponds to an example of a “processing step”.
  • step S24 the processing unit SP2 removes the processing liquid that has entered the recess 92 of the substrate W from the substrate W while rotating the substrate W in the chamber 105.
  • the processing unit SP2 dries the substrate W while rotating the substrate W in the chamber 105, and removes the processing liquid that has entered the concave portion 92 of the substrate W.
  • Step S24 corresponds to an example of a “removal step”.
  • step S25 the processing unit SP2 supplies the etchant (TMAH) to the substrate W while rotating the substrate W in the chamber 105, and etches the substrate W with the etchant.
  • the nozzle 117 discharges an etchant to the substrate W to etch the substrate W.
  • Step S25 corresponds to an example of an “etching step”.
  • step S26 the processing unit SP2 supplies the rinsing liquid (DIW) to the substrate W while rotating the substrate W in the chamber 105, and rinses the etching liquid from the substrate W with the rinsing liquid.
  • the nozzle 115 discharges the rinsing liquid onto the substrate W to wash away the etching liquid from the substrate W.
  • step S27 the processing unit SP2 dries the substrate W while rotating the substrate W in the chamber 105.
  • step S28 the processing unit SP2 stops the rotation of the substrate W.
  • step S29 the transport mechanism (not shown) unloads one substrate W from the processing unit SP2.
  • the processing liquid is removed from the substrate W in the step S24 before the etching in the step S25. That is, the processing liquid is removed from the concave portion 92 before the etching process. Therefore, the etching liquid directly enters the recess 92 into which the processing liquid has not entered. As a result, a decrease in the etching effect on the substrate W can be suppressed.
  • step S23 includes step S231 and step S232.
  • step S231 the processing unit SP2 performs pre-processing on the substrate W while rotating the substrate W. Specifically, the processing unit SP2 supplies the chemical (DHF) to the substrate W while rotating the substrate W, and processes the substrate W with the chemical.
  • Step S231 corresponds to an example of a “chemical solution step”. In the second embodiment, the nozzle 111 discharges a chemical solution to the substrate W, and processes the substrate W with the chemical solution.
  • step S231 the nozzle 111 removes the natural oxide film 93 formed on the substrate W using a chemical (DHF).
  • DHF chemical
  • step S232 the processing unit SP2 supplies the rinsing liquid (DIW) to the substrate W while rotating the substrate W, and rinses the chemical liquid from the substrate W with the rinsing liquid.
  • Step S232 corresponds to an example of a “rinsing step”.
  • the fluid supply unit 121 discharges the rinsing liquid from the discharge port 123a to the substrate W, and rinses the chemical liquid from the substrate W with the rinsing liquid.
  • the fluid supply unit 121 discharges nitrogen gas as a carrier gas to the substrate W from the discharge port 122a. Further, the fluid supply unit 121 discharges a vapor of a water-soluble organic solvent (IPA) from the discharge port 124a to the substrate W, and dries the substrate W while rotating the substrate W.
  • IPA water-soluble organic solvent
  • the rinsing liquid is removed from the concave portion 92 of the substrate W in step S24 before the etching process in step S25. Therefore, the etching liquid directly enters the recess 92 into which the rinsing liquid has not entered. As a result, a decrease in the etching effect on the substrate W can be suppressed.
  • Step S23 may include any one of Step S231 and Step S232.
  • the processing unit SP2 removes the chemical solution that has entered the concave portion 92 of the substrate W from the substrate W in the step S24. Specifically, the processing unit SP2 dries the substrate W and removes the chemical solution that has entered the concave portion 92 of the substrate W.
  • each component shown in the above embodiment is an example, and is not particularly limited. Needless to say, various changes can be made without substantially departing from the effects of the present invention. .
  • the present invention relates to a substrate processing method and a substrate processing apparatus, and has industrial applicability.

Abstract

This substrate processing method processes a substrate (W) having a pattern (PT) that includes a recess (92). The substrate processing method comprises a processing step (S1), a removal step (S2), and an etching step (S3). In the processing step (S1), the substrate (W) is processed with a processing liquid. Following the processing step (S1), in the removal step (S2), the processing liquid that has entered the recess (92) is removed from the substrate (W). In the etching step (S3) after the removal step (S2), the substrate (W) is etched with an etching liquid.

Description

基板処理方法及び基板処理装置Substrate processing method and substrate processing apparatus
　本発明は、基板処理方法及び基板処理装置に関する。 The present invention relates to a substrate processing method and a substrate processing apparatus.
　特許文献１に記載されている基板処理装置は、ウェット処理ユニットを備える。ウェット処理ユニットはウェットエッチング処理を実行する。具体的には、ウェットエッチング処理は、ウェハ搬入工程と、回転開始工程と、自然酸化膜除去工程と、第１リンス工程と、犠牲膜プリエッチング工程と、第２リンス工程と、乾燥工程と、ウェハ搬出工程とを含む。 基板 The substrate processing apparatus described in Patent Document 1 includes a wet processing unit. The wet processing unit performs a wet etching process. Specifically, the wet etching process includes a wafer loading process, a rotation start process, a natural oxide film removing process, a first rinsing process, a sacrificial film pre-etching process, a second rinsing process, and a drying process. And a wafer unloading step.
　ウェハ搬入工程及び回転開始工程が実行された後、自然酸化膜除去工程では、ウェハの表面にＤＨＦ（希フッ酸）を供給して、ウェハから自然酸化膜を除去する。そして、第１リンス工程では、ウェハの表面にリンス液を供給して、自然酸化膜の残留物を洗い流す。さらに、犠牲膜プリエッチング工程では、ウェハの表面にエッチング液を供給して、ウェハから犠牲膜の一部を除去する。具体的には、ウェハの表面には、凹部を含むパターンが形成されている。そして、犠牲膜プリエッチング工程では、凹部にエッチング液を進入させて、パターンとシリコン基板との間に形成された犠牲膜の一部を除去する。そして、第２リンス工程、乾燥工程、及びウェハ搬出工程が実行される。 (4) After the wafer loading step and the rotation start step are performed, in the natural oxide film removing step, DHF (dilute hydrofluoric acid) is supplied to the surface of the wafer to remove the natural oxide film from the wafer. Then, in the first rinsing step, a rinsing liquid is supplied to the surface of the wafer to wash away residues of the native oxide film. Further, in the sacrificial film pre-etching step, an etchant is supplied to the surface of the wafer to remove a part of the sacrificial film from the wafer. Specifically, a pattern including a concave portion is formed on the surface of the wafer. Then, in the sacrifice film pre-etching step, an etchant is made to enter the concave portion to remove a part of the sacrifice film formed between the pattern and the silicon substrate. Then, a second rinsing step, a drying step, and a wafer unloading step are performed.
特開２０１５－８８６１９号公報JP 2015-88619 A
　しかしながら、特許文献１に記載されている基板処理装置では、犠牲膜プリエッチング工程の実行時に、第１リンス工程で供給されたリンス液が、ウェハの表面に形成されたパターンの凹部に残存し得る。 However, in the substrate processing apparatus described in Patent Literature 1, when the sacrificial film pre-etching step is performed, the rinsing liquid supplied in the first rinsing step may remain in the concave portions of the pattern formed on the surface of the wafer. .
　特に近年、基板に形成されるパターンの微細化が進んで、パターンのアスペクト比（凹部の幅に対する深さの比率）が高くなったり、パターンの形状が複雑になったりしている。従って、仮にパターンの凹部にリンス液が残存している状態で凹部にエッチング液を供給すると、リンス液の影響によって、凹部の深さ方向においてエッチング液に濃度勾配が発生し得る。具体的には、エッチング液の供給当初では、エッチング液の濃度が、凹部の浅い位置から深い位置に向かって低くなり得る。従って、エッチング液が凹部の深い位置に浸透するためには、リンス液中への濃度勾配によるエッチング液の拡散の時間が必要になり得る。その結果、エッチング液の拡散の時間を確保してプロセスを定めていない場合は、ウェハに対するエッチング効果が若干低下する可能性がある。 In particular, in recent years, the pattern formed on the substrate has been miniaturized, and the aspect ratio of the pattern (the ratio of the depth to the width of the concave portion) has been increased, and the shape of the pattern has been complicated. Therefore, if the etching liquid is supplied to the concave portions while the rinsing liquid remains in the concave portions of the pattern, a concentration gradient may be generated in the etching liquid in the depth direction of the concave portions due to the influence of the rinsing liquid. Specifically, at the beginning of the supply of the etching liquid, the concentration of the etching liquid may decrease from a shallow position to a deep position of the concave portion. Therefore, in order for the etchant to penetrate deep into the concave portion, diffusion time of the etchant due to the concentration gradient in the rinse solution may be required. As a result, if the process is not determined while securing the diffusion time of the etchant, the etching effect on the wafer may be slightly reduced.
　本発明は上記課題に鑑みてなされたものであり、その目的は、基板に対するエッチング効果の低下を抑制できる基板処理方法及び基板処理装置を提供することにある。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing a decrease in an etching effect on a substrate.
　本発明の一局面によれば、基板処理方法では、凹部を含むパターンを有する基板が処理される。基板処理方法は、前記基板を処理液で処理する処理工程と、前記処理工程の後に、前記凹部に入り込んでいる前記処理液を前記基板から除去する除去工程と、前記除去工程の後に、前記基板をエッチング液でエッチングするエッチング工程とを含む。 According to one aspect of the present invention, in a substrate processing method, a substrate having a pattern including a concave portion is processed. The substrate processing method includes: a processing step of processing the substrate with a processing liquid; a removing step of removing the processing liquid entering the recess from the substrate after the processing step; and With an etching solution.
　本発明の基板処理方法において、前記除去工程では、前記基板を乾燥して、前記凹部に入り込んでいる前記処理液を除去することが好ましい。 In the substrate processing method of the present invention, it is preferable that in the removing step, the substrate is dried to remove the processing liquid that has entered the recess.
　本発明の基板処理方法において、前記処理工程は、前記基板を薬液で処理する薬液工程と、前記処理液としてのリンス液によって前記基板から前記薬液を洗い流すリンス工程とを含むことが好ましい。 In the substrate processing method of the present invention, it is preferable that the processing step includes a chemical processing step of processing the substrate with a chemical liquid, and a rinsing step of washing the chemical liquid from the substrate with a rinsing liquid as the processing liquid.
　本発明の基板処理方法において、前記薬液工程では、前記基板に形成された自然酸化膜を前記薬液によって除去することが好ましい。 In the substrate processing method of the present invention, it is preferable that in the chemical solution step, a natural oxide film formed on the substrate is removed by the chemical solution.
　本発明の基板処理方法において、前記処理工程と前記除去工程と前記エッチング工程とは、複数の槽を備える基板処理装置の外部に前記基板を出すことなく、前記基板処理装置の内部で実行される一連の工程であることが好ましい。 In the substrate processing method of the present invention, the processing step, the removing step, and the etching step are performed inside the substrate processing apparatus without taking the substrate out of a substrate processing apparatus including a plurality of tanks. It is preferably a series of steps.
　本発明の基板処理方法において、前記除去工程では、前記複数の槽のうち前記基板が収容されている槽内に水溶性の有機溶剤の蒸気を供給して、前記槽内を減圧することによって前記基板を乾燥することが好ましい。 In the substrate processing method of the present invention, in the removing step, a vapor of a water-soluble organic solvent is supplied into a tank in which the substrate is housed among the plurality of tanks, and the pressure in the tank is reduced by depressurizing the inside of the tank. Preferably, the substrate is dried.
　本発明の基板処理方法において、前記処理工程と前記除去工程と前記エッチング工程とのうちの少なくとも２以上の工程が、同一槽内で実行されることが好ましい。 In the substrate processing method of the present invention, it is preferable that at least two or more of the processing step, the removing step, and the etching step are performed in the same tank.
　本発明の基板処理方法において、前記処理工程では、チャンバー内で前記基板を回転させながら、前記処理液を前記基板に供給して前記基板を処理することが好ましい。前記除去工程では、前記チャンバー内で前記基板を回転させながら、前記凹部に入り込んでいる前記処理液を除去することが好ましい。前記エッチング工程では、前記チャンバー内で前記基板を回転させながら、前記エッチング液を前記基板に供給して前記基板をエッチングすることが好ましい。 In the substrate processing method of the present invention, it is preferable that, in the processing step, the substrate is processed by supplying the processing liquid to the substrate while rotating the substrate in a chamber. In the removing step, it is preferable that the processing liquid entering the concave portion is removed while rotating the substrate in the chamber. In the etching step, it is preferable that the substrate is etched by supplying the etching liquid to the substrate while rotating the substrate in the chamber.
　本発明の基板処理方法において、前記エッチング液は、テトラメチルアンモニウムハイドロオキサイドを含むことが好ましい。 に お い て In the substrate processing method of the present invention, it is preferable that the etching solution contains tetramethylammonium hydroxide.
　本発明の他の局面によれば、基板処理装置は、凹部を含むパターンを有する基板を処理する。基板処理装置は、前記基板を処理する処理部を備える。前記処理部は、前記基板を処理液で処理する。処理部は、前記基板を前記処理液で処理した後に、前記凹部に入り込んでいる前記処理液を前記基板から除去する。処理部は、前記処理液を前記基板から除去した後に、前記基板をエッチング液でエッチングする。 According to another aspect of the present invention, a substrate processing apparatus processes a substrate having a pattern including a concave portion. The substrate processing apparatus includes a processing unit that processes the substrate. The processing unit processes the substrate with a processing liquid. The processing unit removes the processing liquid that has entered the recess from the substrate after processing the substrate with the processing liquid. The processing unit etches the substrate with an etching liquid after removing the processing liquid from the substrate.
　本発明によれば、基板に対するエッチング効果の低下を抑制できる基板処理方法及び基板処理装置を提供できる。 According to the present invention, it is possible to provide a substrate processing method and a substrate processing apparatus capable of suppressing a decrease in an etching effect on a substrate.
本発明の実施形態１に係る基板処理装置を示す模式的平面図である。FIG. 1 is a schematic plan view illustrating a substrate processing apparatus according to a first embodiment of the present invention. 実施形態１に係る基板処理装置の槽を示す模式的断面図である。FIG. 2 is a schematic sectional view illustrating a tank of the substrate processing apparatus according to the first embodiment. 実施形態１に係る基板処理装置の別の槽を示す模式的断面図である。FIG. 3 is a schematic sectional view illustrating another tank of the substrate processing apparatus according to the first embodiment. （ａ）は、実施形態１に係る基板処理装置が処理する基板の第１状態を示す模式的断面図である。（ｂ）は、基板の第２状態を示す模式的断面図である。（ｃ）は、基板の第３状態を示す模式的断面図である。FIG. 2A is a schematic cross-sectional view illustrating a first state of a substrate processed by the substrate processing apparatus according to the first embodiment. (B) is a schematic sectional view showing a second state of the substrate. (C) is a schematic sectional view showing a third state of the substrate. 実施形態１に係る基板処理方法を示すフローチャートである。4 is a flowchart illustrating a substrate processing method according to the first embodiment. 本発明の実施形態２に係る基板処理装置を示す模式的断面図である。FIG. 4 is a schematic sectional view illustrating a substrate processing apparatus according to a second embodiment of the present invention. 実施形態２に係る基板処理方法を示すフローチャートである。9 is a flowchart illustrating a substrate processing method according to a second embodiment.
　以下、本発明の実施形態について、図面を参照しながら説明する。なお、図中、同一または相当部分については同一の参照符号を付して説明を繰り返さない。また、本発明の実施形態において、Ｘ軸、Ｙ軸、及びＺ軸は互いに直交し、Ｘ軸及びＹ軸は水平方向に平行であり、Ｚ軸は鉛直方向に平行である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts have the same reference characters allotted, and description thereof will not be repeated. In the embodiment of the present invention, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
　（実施形態１）
　図１～図５を参照して、本発明の実施形態１に係る基板処理装置１００及び基板処理方法を説明する。実施形態１に係る基板処理装置１００はバッチ式である。従って、基板処理装置１００は、複数の基板Ｗを一括して処理する。具体的には、基板処理装置１００は、複数のロットを処理する。複数のロットの各々は複数の基板Ｗからなる。例えば、１ロットは２５枚の基板Ｗからなる。基板Ｗは、例えば、略円板状である。 (Embodiment 1)
A substrate processing apparatus 100 and a substrate processing method according to a first embodiment of the present invention will be described with reference to FIGS. The substrate processing apparatus 100 according to the first embodiment is of a batch type. Therefore, the substrate processing apparatus 100 processes a plurality of substrates W collectively. Specifically, the substrate processing apparatus 100 processes a plurality of lots. Each of the plurality of lots includes a plurality of substrates W. For example, one lot includes 25 substrates W. The substrate W is, for example, substantially disk-shaped.
　基板Ｗは、例えば、半導体ウェハ、液晶表示装置用基板、プラズマディスプレイ用基板、電界放出ディスプレイ（Ｆｉｅｌｄ　Ｅｍｉｓｓｉｏｎ　Ｄｉｓｐｌａｙ：ＦＥＤ）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、又は、太陽電池用基板である。半導体ウェハは、例えば、三次元フラッシュメモリー（例えば三次元ＮＡＮＤフラッシュメモリー）を形成するためのパターンを有する。 The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Emission Display: FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, and a photomask. Substrate, a ceramic substrate, or a solar cell substrate. The semiconductor wafer has, for example, a pattern for forming a three-dimensional flash memory (for example, a three-dimensional NAND flash memory).
　まず、図１を参照して基板処理装置１００を説明する。図１は、基板処理装置１００を示す模式的平面図である。図１に示すように、基板処理装置１００は、複数の収納部１と、投入部３と、払出部７と、受け渡し機構１１と、バッファユニットＢＵと、搬送機構ＣＶと、処理部ＳＰ１とを備える。処理部ＳＰ１は複数の槽ＴＡを含む。搬送機構ＣＶは、第１搬送機構ＣＴＣと、第２搬送機構ＷＴＲと、副搬送機構ＬＦ１と、副搬送機構ＬＦ２と、副搬送機構ＬＦ３とを含む。処理部ＳＰ１は、乾燥処理部１７と、第１処理部１９と、第２処理部２０と、第３処理部２１とを含む。乾燥処理部１７は、複数の槽ＴＡのうちの槽ＬＰＤ１及び槽ＬＰＤ２を含む。第１処理部１９は、複数の槽ＴＡのうちの槽ＯＮＢ１及び槽ＣＨＢ１を含む。第２処理部２０は、複数の槽ＴＡのうちの槽ＯＮＢ２及び槽ＣＨＢ２を含む。第３処理部２１は、複数の槽ＴＡのうちの槽ＯＮＢ３及び槽ＣＨＢ３を含む。 First, the substrate processing apparatus 100 will be described with reference to FIG. FIG. 1 is a schematic plan view showing the substrate processing apparatus 100. As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of storage units 1, a loading unit 3, a payout unit 7, a delivery mechanism 11, a buffer unit BU, a transport mechanism CV, and a processing unit SP1. Prepare. The processing unit SP1 includes a plurality of tanks TA. The transport mechanism CV includes a first transport mechanism CTC, a second transport mechanism WTR, a sub transport mechanism LF1, a sub transport mechanism LF2, and a sub transport mechanism LF3. The processing unit SP1 includes a drying processing unit 17, a first processing unit 19, a second processing unit 20, and a third processing unit 21. The drying processing unit 17 includes a tank LPD1 and a tank LPD2 among the plurality of tanks TA. The first processing unit 19 includes a tank ONB1 and a tank CHB1 among the plurality of tanks TA. The second processing unit 20 includes a tank ONB2 and a tank CHB2 among the plurality of tanks TA. The third processing unit 21 includes a tank ONB3 and a tank CHB3 among the plurality of tanks TA.
　複数の収納部１の各々は、複数の基板Ｗを収容する。各基板Ｗは水平姿勢で収納部１に収容される。収納部１は、例えば、ＦＯＵＰ（Ｆｒｏｎｔ　Ｏｐｅｎｉｎｇ　Ｕｎｉｆｉｅｄ　Ｐｏｄ）である。 各 々 Each of the plurality of storage units 1 stores a plurality of substrates W. Each substrate W is stored in the storage unit 1 in a horizontal posture. The storage unit 1 is, for example, a FOUP (Front Opening Unified Pod).
　未処理の基板Ｗを収納する収納部１は、投入部３に載置される。具体的には、投入部３は複数の載置台５を含む。そして、２つの収納部１が、それぞれ、２つの載置台５に載置される。投入部３は、基板処理装置１００の長手方向の一方端に配置される。 (4) The storage unit 1 for storing an unprocessed substrate W is placed on the input unit 3. Specifically, the loading section 3 includes a plurality of mounting tables 5. Then, the two storage sections 1 are respectively mounted on the two mounting tables 5. The loading section 3 is arranged at one end in the longitudinal direction of the substrate processing apparatus 100.
　処理済みの基板Ｗを収納する収納部１は、払出部７に載置される。具体的には、払出部７は複数の載置台９を含む。そして、２つの収納部１が、それぞれ、２つの載置台９に載置される。払出部７は、処理済みの基板Ｗを収納部１に収納して収納部１ごと払い出す。払出部７は、基板処理装置１００の長手方向の一方端に配置される。払出部７は、投入部３に対して、基板処理装置１００の長手方向に直交する方向に対向している。 収納 The storage unit 1 that stores the processed substrate W is placed on the payout unit 7. Specifically, the payout unit 7 includes a plurality of mounting tables 9. Then, the two storage units 1 are respectively mounted on the two mounting tables 9. The payout unit 7 stores the processed substrate W in the storage unit 1 and pays out the entire storage unit 1. The payout unit 7 is disposed at one end in the longitudinal direction of the substrate processing apparatus 100. The payout unit 7 faces the input unit 3 in a direction orthogonal to the longitudinal direction of the substrate processing apparatus 100.
　バッファユニットＢＵは、投入部３及び払出部７に隣接して配置される。バッファユニットＢＵは、投入部３に載置された収納部１を基板Ｗごと内部に取り込むとともに、棚（不図示）に収納部１を載置する。また、バッファユニットＢＵは、処理済みの基板Ｗを受け取って収納部１に収納するとともに、棚に収納部１を載置する。バッファユニットＢＵ内には、受け渡し機構１１が配置されている。 The buffer unit BU is arranged adjacent to the input unit 3 and the payout unit 7. The buffer unit BU takes in the storage unit 1 placed in the input unit 3 together with the substrate W and places the storage unit 1 on a shelf (not shown). The buffer unit BU receives the processed substrate W, stores it in the storage unit 1, and places the storage unit 1 on a shelf. The transfer mechanism 11 is arranged in the buffer unit BU.
　受け渡し機構１１は、投入部３及び払出部７と棚との間で収納部１を受け渡す。また、受け渡し機構１１は、受け渡し機構１１と搬送機構ＣＶとの間で基板Ｗのみの受け渡しを行う。具体的には、受け渡し機構１１は、受け渡し機構１１と搬送機構ＣＶとの間でロットの受け渡しを行う。搬送機構ＣＶは、処理部ＳＰ１に対してロットを搬入及び搬出する。具体的には、搬送機構ＣＶは、処理部ＳＰ１の槽ＴＡの各々に対してロットを搬入及び搬出する。処理部ＳＰ１は、ロットの各基板Ｗを処理する。 The delivery mechanism 11 delivers the storage unit 1 between the input unit 3 and the payout unit 7 and the shelf. The transfer mechanism 11 transfers only the substrate W between the transfer mechanism 11 and the transport mechanism CV. Specifically, the transfer mechanism 11 transfers a lot between the transfer mechanism 11 and the transport mechanism CV. The transport mechanism CV loads and unloads lots from and to the processing unit SP1. Specifically, the transport mechanism CV carries in / out the lot to / from each of the tanks TA of the processing unit SP1. The processing unit SP1 processes each substrate W of the lot.
　具体的には、受け渡し機構１１は、受け渡し機構１１と搬送機構ＣＶの第１搬送機構ＣＴＣとの間でロットの受け渡しを行う。第１搬送機構ＣＴＣは、受け渡し機構１１から受け取ったロットの複数の基板Ｗの姿勢を水平姿勢から垂直姿勢に変換した後、第２搬送機構ＷＴＲにロットを受け渡す。また、第１搬送機構ＣＴＣは、第２搬送機構ＷＴＲから処理済みのロットを受け取った後、ロットの複数の基板Ｗの姿勢を垂直姿勢から水平姿勢へと変換して、ロットを受け渡し機構１１に受け渡す。 Specifically, the transfer mechanism 11 transfers a lot between the transfer mechanism 11 and the first transfer mechanism CTC of the transfer mechanism CV. The first transfer mechanism CTC transfers the lot to the second transfer mechanism WTR after converting the attitude of the plurality of substrates W of the lot received from the transfer mechanism 11 from the horizontal attitude to the vertical attitude. Further, after receiving the processed lot from the second transport mechanism WTR, the first transport mechanism CTC converts the attitude of the plurality of substrates W of the lot from a vertical attitude to a horizontal attitude, and sends the lot to the lot transfer mechanism 11. Hand over.
　第２搬送機構ＷＴＲは、基板処理装置１００の長手方向に沿って、処理部ＳＰ１の乾燥処理部１７から第３処理部２１まで移動可能である。従って、第２搬送機構ＷＴＲは、乾燥処理部１７、第１処理部１９、第２処理部２０、及び第３処理部２１に対して、ロットを搬入及び搬出する。 {Circle around (2)} The second transport mechanism WTR is movable along the longitudinal direction of the substrate processing apparatus 100 from the drying processing section 17 of the processing section SP1 to the third processing section 21. Therefore, the second transport mechanism WTR loads and unloads the lot from the drying processing unit 17, the first processing unit 19, the second processing unit 20, and the third processing unit 21.
　乾燥処理部１７はロットに対して乾燥処理を行う。具体的には、乾燥処理部１７の槽ＬＰＤ１及び槽ＬＰＤ２の各々が、ロットを収納してロットの複数の基板Ｗに対して乾燥処理を行う。第２搬送機構ＷＴＲは、槽ＬＰＤ１及び槽ＬＰＤ２の各々に対してロットを搬入及び搬出する。 (4) The drying unit 17 performs a drying process on the lot. Specifically, each of the tanks LPD1 and LPD2 of the drying processing unit 17 stores a lot and performs a drying process on a plurality of substrates W in the lot. The second transport mechanism WTR loads and unloads lots from and into each of the tank LPD1 and the tank LPD2.
　乾燥処理部１７に隣接して第１処理部１９が配置されている。第１処理部１９の槽ＯＮＢ１は、ロットの複数の基板Ｗに対して薬液による前処理を行う。前処理とは、エッチング処理（具体的にはウェットエッチング処理）よりも前に行われる薬液による処理のことである。薬液は、自然酸化膜を基板Ｗから除去する場合は、例えば、希フッ酸（ＤＨＦ：Ｄｉｌｕｔｅｄ　ｈｙｄｒｏｆｌｕｏｒｉｃ　ａｃｉｄ）である。なお、基板Ｗに対して前処理を行うことができる限りにおいては、前処理で使用する薬液の種類は特に限定されない。 第 The first processing unit 19 is arranged adjacent to the drying processing unit 17. The tank ONB1 of the first processing unit 19 performs pretreatment with a chemical solution on a plurality of substrates W of the lot. The pretreatment is a treatment with a chemical solution performed before the etching treatment (specifically, the wet etching treatment). When the natural oxide film is removed from the substrate W, the chemical solution is, for example, dilute hydrofluoric acid (DHF: Diluted hydrofluoric acid). Note that the type of the chemical used in the pretreatment is not particularly limited as long as the pretreatment can be performed on the substrate W.
　又は、槽ＯＮＢ１は、ロットの複数の基板Ｗに対してリンス液による洗浄処理を行う。リンス液は洗浄液の一例である。なお、洗浄処理では、リンス液に基板Ｗが浸漬されていると、時間の経過に伴って基板Ｗが洗浄されるが、ある時間になると洗浄効果は飽和状態になる。 Or, the tank ONB1 performs a cleaning process using a rinsing liquid on a plurality of substrates W of the lot. The rinsing liquid is an example of the cleaning liquid. In the cleaning process, if the substrate W is immersed in the rinsing liquid, the substrate W is cleaned over time, but after a certain time, the cleaning effect becomes saturated.
　リンス液は、例えば、純水（ＤＩＷ：Ｄｅｉｏｎｚｉｅｄ　Ｗａｔｅｒ）、炭酸水、電解イオン水、水素水、オゾン水、および希釈濃度（例えば、１０ｐｐｍ～１００ｐｐｍ程度）の塩酸水のいずれかである。純水とは、脱イオン水のことである。なお、基板Ｗに対して洗浄処理を行うことができる限りにおいては、洗浄処理で使用されるリンス液の種類は特に限定されない。 The rinsing liquid is, for example, any of pure water (DIW: Deionized Water), carbonated water, electrolytic ionic water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). Pure water is deionized water. The type of the rinsing liquid used in the cleaning process is not particularly limited as long as the cleaning process can be performed on the substrate W.
　又は、槽ＯＮＢ１は、ロットの複数の基板Ｗに対してエッチング液によるエッチング処理を行う。つまり、槽ＯＮＢ１は、ロットの複数の基板Ｗに対してウェットエッチング処理を行う。なお、エッチング処理では、エッチング液に基板Ｗが浸漬されている限りは、時間が経過する程、エッチング量が多くなり、エッチング量が飽和状態にならない。 Or, the tank ONB1 performs an etching process on the plurality of substrates W of the lot using an etchant. That is, the tank ONB1 performs the wet etching process on the plurality of substrates W of the lot. In the etching process, as long as the substrate W is immersed in the etching solution, the etching amount increases as the time elapses, and the etching amount does not become saturated.
　エッチング液は、例えば、アルカリ性のエッチング液又は酸性のエッチング液である。アルカリ性のエッチング液は、例えば、テトラメチルアンモニウムハイドロオキサイド（ＴＭＡＨ）を含む水溶液、トリメチル－２ヒドロキシエチルアンモニウムハイドロオキサイド（ＴＭＹ）を含む水溶液、又は、水酸化アンモニウム（アンモニア水）である。酸性のエッチング液は、例えば、燐酸、又は、混酸である。なお、基板Ｗに対してエッチング処理を行うことができる限りにおいては、エッチング処理で使用されるエッチング液の種類は特に限定されない。 (4) The etchant is, for example, an alkaline etchant or an acidic etchant. The alkaline etching solution is, for example, an aqueous solution containing tetramethylammonium hydroxide (TMAH), an aqueous solution containing trimethyl-2-hydroxyethylammonium hydroxide (TMY), or ammonium hydroxide (aqueous ammonia). The acidic etching solution is, for example, phosphoric acid or a mixed acid. Note that the type of the etchant used in the etching process is not particularly limited as long as the etching process can be performed on the substrate W.
　槽ＣＨＢ１は、槽ＯＮＢ１と同様の構成を有しており、槽ＯＮＢ１と同様の処理を行う。 (4) The tank CHB1 has the same configuration as the tank ONB1, and performs the same processing as the tank ONB1.
　搬送機構ＣＶの副搬送機構ＬＦ１は、第１処理部１９内でのロットの搬送の他に、第２搬送機構ＷＴＲとの間でロットの受け渡しを行う。また、副搬送機構ＬＦ１は、ロットを槽ＯＮＢ１又は槽ＣＨＢ１に浸漬したり、ロットを槽ＯＮＢ１又は槽ＣＨＢ１から引き上げたりする。 (4) The sub-transport mechanism LF1 of the transport mechanism CV transfers the lot to and from the second transport mechanism WTR in addition to the transport of the lot in the first processing unit 19. The sub-transport mechanism LF1 immerses the lot in the tank ONB1 or the tank CHB1, or lifts the lot from the tank ONB1 or the tank CHB1.
　第１処理部１９に隣接して第２処理部２０が配置されている。第２処理部２０の槽ＯＮＢ２及び槽ＣＨＢ２の各々は、槽ＯＮＢ１と同様の構成を有しており、槽ＯＮＢ１と同様の処理を行う。搬送機構ＣＶの副搬送機構ＬＦ２は、第２処理部２０内でのロットの搬送の他に、第２搬送機構ＷＴＲとの間でロットの受け渡しを行う。また、副搬送機構ＬＦ２は、ロットを槽ＯＮＢ２又は槽ＣＨＢ２に浸漬したり、ロットを槽ＯＮＢ２又は槽ＣＨＢ２から引き上げたりする。 第 A second processing unit 20 is arranged adjacent to the first processing unit 19. Each of the tank ONB2 and the tank CHB2 of the second processing unit 20 has the same configuration as the tank ONB1, and performs the same processing as the tank ONB1. The sub-transport mechanism LF2 of the transport mechanism CV transfers the lot to and from the second transport mechanism WTR in addition to the transport of the lot in the second processing unit 20. Further, the sub-transport mechanism LF2 immerses the lot in the tank ONB2 or CHB2 or lifts the lot from the tank ONB2 or CHB2.
　第２処理部２０に隣接して第３処理部２１が配置されている。第３処理部２１の槽ＯＮＢ３及び槽ＣＨＢ３の各々は、槽ＯＮＢ１と同様の構成を有しており、槽ＯＮＢ１と同様の処理を行う。搬送機構ＣＶの副搬送機構ＬＦ３は、第３処理部２１内でのロットの搬送の他に、第２搬送機構ＷＴＲとの間でロットの受け渡しを行う。また、副搬送機構ＬＦ３は、ロットを槽ＯＮＢ３又は槽ＣＨＢ３に浸漬したり、ロットを槽ＯＮＢ３又は槽ＣＨＢ３から引き上げたりする。 第 A third processing unit 21 is arranged adjacent to the second processing unit 20. Each of the tank ONB3 and the tank CHB3 of the third processing unit 21 has the same configuration as the tank ONB1, and performs the same processing as the tank ONB1. The sub-transport mechanism LF3 of the transport mechanism CV transfers the lot to and from the second transport mechanism WTR in addition to the transport of the lot in the third processing unit 21. Further, the sub-transport mechanism LF3 immerses the lot in the tank ONB3 or the tank CHB3, or lifts the lot from the tank ONB3 or the tank CHB3.
　以上、図１を参照して説明したように、搬送機構ＣＶは、処理部ＳＰ１の槽ＴＡ（槽ＬＰＤ１、槽ＬＰＤ２、槽ＯＮＢ１～槽ＯＮＢ３、及び、槽ＣＨＢ１～槽ＣＨＢ３）の各々に対してロットを搬入及び搬出することが可能である。そして、複数の槽ＴＡの各々はロットを処理可能である。 As described above with reference to FIG. 1, the transport mechanism CV is provided for each of the tanks TA (the tanks LPD1, the LPD2, the tanks ONB1 to ONB3, and the tanks CHB1 to CHB3) of the processing unit SP1. Lots can be loaded and unloaded. Each of the plurality of tanks TA can process a lot.
　本明細書において、前処理で使用する「薬液」及び洗浄処理で使用する「リンス液」の各々は「処理液」の一例に相当する。 に お い て In this specification, each of the “chemical solution” used in the pretreatment and the “rinse solution” used in the cleaning process correspond to an example of the “treatment solution”.
　次に、図２を参照して槽ＯＮＢ１を説明する。図２は、槽ＯＮＢ１を示す模式的断面図である。図２に示すように、槽ＯＮＢ１は、処理槽４１と、回収槽４３と、複数のノズル４５とを含む。副搬送機構ＬＦ１は複数の保持棒４０を含む。基板処理装置１００は、薬液供給源２３と、バルブ２４と、リンス液供給源２５と、バルブ２６と、エッチング液供給源２７と、バルブ２８と、排液ドレイン２９と、配管３１と、配管３３とをさらに備える。 Next, the tank ONB1 will be described with reference to FIG. FIG. 2 is a schematic sectional view showing the tank ONB1. As shown in FIG. 2, the tank ONB1 includes a processing tank 41, a collection tank 43, and a plurality of nozzles 45. The sub-transport mechanism LF1 includes a plurality of holding rods 40. The substrate processing apparatus 100 includes a chemical solution supply source 23, a valve 24, a rinse solution supply source 25, a valve 26, an etchant supply source 27, a valve 28, a drainage drain 29, a pipe 31, and a pipe 33. And further comprising:
　処理槽４１は、薬液、リンス液、又はエッチング液を貯留することが可能な容器である。処理槽４１には、薬液、リンス液、又はエッチング液が、異なる時間帯に貯留される。処理槽４１は、薬液中に基板Ｗを浸漬することによって基板Ｗに対して前処理を行う。実施形態１では、前処理を行うための薬液は、ＤＨＦである。処理槽４１は、リンス液中に基板Ｗを浸漬することによって基板Ｗに対して洗浄処理を行う。実施形態１では、洗浄処理で使用するリンス液はＤＩＷである。処理槽４１は、エッチング液中に基板Ｗを浸漬することによって基板Ｗに対してエッチング処理を行う。実施形態１では、エッチング処理で使用するエッチング液は、ＴＭＡＨを含む水溶液である。 The processing tank 41 is a container that can store a chemical solution, a rinsing liquid, or an etching liquid. In the processing tank 41, a chemical solution, a rinsing solution, or an etching solution is stored at different time zones. The processing tank 41 performs pre-processing on the substrate W by immersing the substrate W in a chemical solution. In the first embodiment, the chemical solution for performing the pretreatment is DHF. The processing tank 41 performs a cleaning process on the substrate W by immersing the substrate W in a rinsing liquid. In the first embodiment, the rinsing liquid used in the cleaning process is DIW. The processing tank 41 performs an etching process on the substrate W by immersing the substrate W in an etchant. In the first embodiment, the etching solution used in the etching process is an aqueous solution containing TMAH.
　処理槽４１の上部は開口している。そして、開口から、薬液、リンス液、又はエッチング液を溢れ出させることが可能となっている。処理槽４１の上端周辺部には回収槽４３が設けられる。そして、処理槽４１の開口から溢れ出た薬液、リンス液、又はエッチング液は、回収槽４３に流れ込んで収容される。回収槽４３と排液ドレイン２９とは配管３３によって接続される。従って、回収槽４３に流れ込んだ薬液、リンス液、又はエッチング液は、配管３３を介して排液ドレイン２９へ排出される。 上部 The upper part of the processing tank 41 is open. Then, a chemical solution, a rinsing solution, or an etching solution can overflow from the opening. A collection tank 43 is provided around the upper end of the processing tank 41. Then, the chemical solution, the rinsing solution, or the etching solution overflowing from the opening of the processing tank 41 flows into the recovery tank 43 and is stored therein. The collection tank 43 and the drainage drain 29 are connected by a pipe 33. Therefore, the chemical, rinse, or etchant that has flowed into the recovery tank 43 is discharged to the drain 29 via the pipe 33.
　複数のノズル４５は、処理槽４１の内部に配置される。複数のノズル４５は、配管３１に接続される。配管３１には、バルブ２４と、バルブ２６と、バルブ２８とが介挿される。 The plurality of nozzles 45 are arranged inside the processing tank 41. The plurality of nozzles 45 are connected to the pipe 31. A valve 24, a valve 26, and a valve 28 are inserted into the pipe 31.
　配管３１は、バルブ２４を介して薬液供給源２３と接続される。従って、バルブ２４を開け、バルブ２６及びバルブ２８を閉じると、薬液が、薬液供給源２３から配管３１を介して複数のノズル４５に供給される。その結果、複数のノズル４５は、薬液を処理槽４１に吐出する。 The pipe 31 is connected to the chemical supply source 23 via the valve 24. Therefore, when the valve 24 is opened and the valves 26 and 28 are closed, the chemical is supplied from the chemical supply source 23 to the plurality of nozzles 45 via the pipe 31. As a result, the plurality of nozzles 45 discharge the chemical solution to the processing tank 41.
　配管３１は、バルブ２６を介してリンス液供給源２５と接続される。従って、バルブ２６を開け、バルブ２４及びバルブ２８を閉じると、リンス液が、リンス液供給源２５から配管３１を介して複数のノズル４５に供給される。その結果、複数のノズル４５は、リンス液を処理槽４１に吐出する。 The pipe 31 is connected to the rinse liquid supply source 25 via the valve 26. Therefore, when the valve 26 is opened and the valves 24 and 28 are closed, the rinsing liquid is supplied from the rinsing liquid supply source 25 to the plurality of nozzles 45 via the pipe 31. As a result, the plurality of nozzles 45 discharge the rinsing liquid to the processing tank 41.
　配管３１は、バルブ２８を介してエッチング液供給源２７と接続される。従って、バルブ２８を開け、バルブ２４及びバルブ２６を閉じると、エッチング液が、エッチング液供給源２７から配管３１を介して複数のノズル４５に供給される。その結果、複数のノズル４５は、エッチング液を処理槽４１に吐出する。 The pipe 31 is connected to the etching liquid supply source 27 via the valve 28. Therefore, when the valve 28 is opened and the valves 24 and 26 are closed, the etching liquid is supplied from the etching liquid supply source 27 to the plurality of nozzles 45 via the pipe 31. As a result, the plurality of nozzles 45 discharge the etching liquid to the processing tank 41.
　副搬送機構ＬＦ１の複数の保持棒４０は、複数の基板Ｗを起立姿勢で保持する。そして、副搬送機構ＬＦ１は、複数の保持棒４０で保持された複数の基板Ｗを、処理槽４１内に浸漬される位置と、処理槽４１から引き上げられた位置との間で移動する。なお、副搬送機構ＬＦ２及び副搬送機構ＬＦ３の構成は、副搬送機構ＬＦ１の構成と同様である。 (4) The plurality of holding rods 40 of the sub-transport mechanism LF1 hold the plurality of substrates W in a standing posture. Then, the sub-transport mechanism LF <b> 1 moves the plurality of substrates W held by the plurality of holding rods 40 between a position where the substrates W are immersed in the processing tank 41 and a position where the substrates W are pulled up from the processing tank 41. The configuration of the sub-transport mechanism LF2 and the sub-transport mechanism LF3 is the same as the configuration of the sub-transport mechanism LF1.
　次に、図３を参照して槽ＬＰＤ１を説明する。図３は、槽ＬＰＤ１を示す模式的断面図である。図３に示すように、実施形態１では、槽ＬＰＤ１は、水溶性の有機溶剤の蒸気を用いた減圧引上げ式乾燥法に基づいて乾燥処理を実行する。 Next, the tank LPD1 will be described with reference to FIG. FIG. 3 is a schematic sectional view showing the tank LPD1. As shown in FIG. 3, in the first embodiment, the tank LPD <b> 1 performs a drying process based on a reduced-pressure lifting drying method using a vapor of a water-soluble organic solvent.
　具体的には、槽ＬＰＤ１は、チャンバー７１と、処理槽７３と、回収槽７５と、昇降機構７７と、複数のノズル８１と、複数のガスノズル８３とを含む。昇降機構７７は複数の保持棒７９を含む。基板処理装置１００は、ガス供給機構５１と、減圧部５３と、純水供給源５５と、バルブ５７と、配管５９と、排気ライン６１と、配管６３と、排液ライン６５とをさらに備える。 Specifically, the tank LPD1 includes a chamber 71, a processing tank 73, a recovery tank 75, an elevating mechanism 77, a plurality of nozzles 81, and a plurality of gas nozzles 83. The elevating mechanism 77 includes a plurality of holding rods 79. The substrate processing apparatus 100 further includes a gas supply mechanism 51, a decompression unit 53, a pure water supply source 55, a valve 57, a pipe 59, an exhaust line 61, a pipe 63, and a drain line 65.
　チャンバー７１は、処理槽７３と、回収槽７５と、昇降機構７７と、複数のノズル８１と、複数のガスノズル８３とを収容する。チャンバー７１はカバー７１ａを含む。カバー７１ａは、チャンバー７１の上部の開口に装着されている。カバー７１ａは開閉可能である。 The chamber 71 accommodates the processing tank 73, the recovery tank 75, the elevating mechanism 77, the plurality of nozzles 81, and the plurality of gas nozzles 83. The chamber 71 includes a cover 71a. The cover 71a is attached to the upper opening of the chamber 71. The cover 71a can be opened and closed.
　処理槽７３は、純水（ＤＩＷ）を貯留することが可能な容器である。処理槽７３は、純水中に基板Ｗを浸漬することによって基板Ｗを水洗する。複数のノズル８１は、処理槽７３の内部に配置される。複数のノズル８１は、配管６３に接続される。配管６３には、バルブ５７が介挿される。配管６３は、バルブ５７を介して純水供給源５５と接続される。従って、バルブ５７を開けると、純水が、純水供給源５５から配管６３を介して複数のノズル８１に供給される。その結果、複数のノズル８１は、純水を処理槽７３に吐出する。なお、純水供給源５５は、図２に示すリンス液供給源２５であってもよい。 The processing tank 73 is a container that can store pure water (DIW). The processing tank 73 rinses the substrate W with water by immersing the substrate W in pure water. The plurality of nozzles 81 are arranged inside the processing tank 73. The plurality of nozzles 81 are connected to the pipe 63. A valve 57 is inserted into the pipe 63. The pipe 63 is connected to a pure water supply source 55 via a valve 57. Therefore, when the valve 57 is opened, pure water is supplied from the pure water supply source 55 to the plurality of nozzles 81 via the pipe 63. As a result, the plurality of nozzles 81 discharge pure water to the processing tank 73. Note that the pure water supply source 55 may be the rinse liquid supply source 25 shown in FIG.
　処理槽７３の上端周辺部には回収槽７５が設けられる。基板Ｗの水洗中は、複数のノズル８１から処理槽７３に純水が供給され続け、処理槽７３の上端部から常に純水が溢れ出る。溢れ出た純水は回収槽７５へと流れ込み、排液ライン６５からチャンバー７１の外部へ排出される。 回収 A collection tank 75 is provided around the upper end of the processing tank 73. During the rinsing of the substrate W, pure water is continuously supplied from the plurality of nozzles 81 to the processing tank 73, and the pure water always overflows from the upper end of the processing tank 73. The overflowed pure water flows into the recovery tank 75, and is discharged from the drainage line 65 to the outside of the chamber 71.
　昇降機構７７の複数の保持棒７９は、複数の基板Ｗを起立姿勢で保持する。そして、昇降機構７７は、複数の保持棒７９で保持された複数の基板Ｗを、処理槽７３内に浸漬される位置と、処理槽７３から引き上げられた位置との間で移動する。 複数 The plurality of holding rods 79 of the elevating mechanism 77 hold the plurality of substrates W in a standing posture. Then, the elevating mechanism 77 moves the plurality of substrates W held by the plurality of holding rods 79 between a position where the substrates W are immersed in the processing tank 73 and a position where the substrates W are pulled up from the processing tank 73.
　複数のガスノズル８３は、チャンバー７１の内部であって、処理槽７３の外部に配置される。具体的には、複数のガスノズル８３は、チャンバー７１の内部であって、処理槽７３の上方に配置される。複数のガスノズル８３は、配管５９に接続される。配管５９には、ガス供給機構５１が接続される。ガス供給機構５１は、不活性ガスをキャリアガスとして、水溶性の有機溶剤の蒸気を複数のガスノズル８３に供給する。その結果、複数のガスノズル８３は、チャンバー７１の内部に有機溶剤の蒸気を吐出する。実施形態１では、水溶性の有機溶剤の蒸気は、イソプロピルアルコール（ＩＰＡ）の蒸気である。 The plurality of gas nozzles 83 are arranged inside the chamber 71 and outside the processing tank 73. Specifically, the plurality of gas nozzles 83 are arranged inside the chamber 71 and above the processing tank 73. The plurality of gas nozzles 83 are connected to the pipe 59. The gas supply mechanism 51 is connected to the pipe 59. The gas supply mechanism 51 supplies a vapor of a water-soluble organic solvent to the plurality of gas nozzles 83 using an inert gas as a carrier gas. As a result, the gas nozzles 83 discharge the vapor of the organic solvent into the chamber 71. In the first embodiment, the vapor of the water-soluble organic solvent is isopropyl alcohol (IPA).
　減圧部５３は、排気ライン６１を介してチャンバー７１と接続されている。カバー７１ａを閉鎖してチャンバー７１の内部を密閉空間とした状態において、減圧部５３は、チャンバー７１内の気体を排気することによりチャンバー７１内を大気圧未満に減圧する。減圧部５３は、例えば、排気ポンプを含む。 The decompression unit 53 is connected to the chamber 71 via the exhaust line 61. In a state in which the cover 71a is closed and the inside of the chamber 71 is a closed space, the pressure reducing unit 53 reduces the pressure in the chamber 71 to less than the atmospheric pressure by exhausting the gas in the chamber 71. The pressure reducing unit 53 includes, for example, an exhaust pump.
　引き続き図３を参照して槽ＬＰＤ１による乾燥処理方法を説明する。乾燥処理方法は、工程１～工程６を含む。 (4) A drying method using the tank LPD1 will be described with reference to FIG. The drying treatment method includes Step 1 to Step 6.
　工程１：ノズル８１が純水を吐出し、処理槽７３が純水を貯留する。 Step 1: The nozzle 81 discharges pure water, and the processing tank 73 stores the pure water.
　工程２：昇降機構７７が、処理槽７３内に収容された純水中に基板Ｗを浸漬させ、処理槽７３が基板Ｗを水洗する。 {Circle around (2)} Step 2: The elevating mechanism 77 immerses the substrate W in pure water contained in the processing tank 73, and the processing tank 73 rinses the substrate W with water.
　工程３：ガスノズル８３が、有機溶剤の蒸気をチャンバー７１内に吐出し、チャンバー７１内に有機溶剤の蒸気の雰囲気を形成する。 Step 3: The gas nozzle 83 discharges the vapor of the organic solvent into the chamber 71 to form an atmosphere of the vapor of the organic solvent in the chamber 71.
　工程４：昇降機構７７が、処理槽７３内の純水中から基板Ｗを引き上げる（図３の二点鎖線で示す基板Ｗ）。従って、基板Ｗは有機溶剤の蒸気の雰囲気中に曝される。その結果、基板Ｗの表面に有機溶剤の蒸気が凝縮し、有機溶剤が基板Ｗの表面に付着していた水滴と置換する。 {Step 4: The lifting mechanism 77 lifts the substrate W from the pure water in the processing tank 73 (substrate W indicated by a two-dot chain line in FIG. 3). Therefore, the substrate W is exposed to the atmosphere of the vapor of the organic solvent. As a result, the vapor of the organic solvent is condensed on the surface of the substrate W, and the organic solvent replaces water droplets adhering to the surface of the substrate W.
　工程５：処理槽７３内の純水を急速排水するとともに、ガスノズル８３が、有機溶剤の蒸気の吐出を停止する。 {Circle around (5)} Step 5: The pure water in the treatment tank 73 is rapidly drained, and the gas nozzle 83 stops discharging the vapor of the organic solvent.
　工程６：減圧部５３が、チャンバー７１内の気体を排気ライン６１から排気することによりチャンバー７１内を大気圧未満に減圧する。その結果、基板Ｗの表面に凝縮していた有機溶剤が完全に蒸発して基板Ｗが乾燥する。 {Circle around (6)} The pressure reducing unit 53 reduces the pressure in the chamber 71 to less than the atmospheric pressure by exhausting the gas in the chamber 71 from the exhaust line 61. As a result, the organic solvent condensed on the surface of the substrate W is completely evaporated, and the substrate W is dried.
　なお、槽ＬＰＤ２の構成は槽ＬＰＤ１の構成と同様である。また、槽ＬＰＤ１及び槽ＬＰＤ２による乾燥処理は、基板Ｗを乾燥できる限りにおいては、減圧引上げ式乾燥法に限定されず、例えば、所定温度の乾燥用温風を基板Ｗに吹き付けて基板Ｗを乾燥してもよいし、基板Ｗの雰囲気を加熱器によって昇温することで基板Ｗを乾燥してもよい。 The configuration of the tank LPD2 is the same as the configuration of the tank LPD1. Further, the drying process in the tank LPD1 and the tank LPD2 is not limited to the depressurized pull-up drying method as long as the substrate W can be dried. For example, the substrate W is dried by blowing hot air for drying at a predetermined temperature onto the substrate W. Alternatively, the substrate W may be dried by raising the temperature of the atmosphere of the substrate W with a heater.
　次に、基板処理装置１００が処理する基板Ｗの一例を説明する。図４（ａ）は、基板Ｗの第１状態を示す模式的断面図である。第１状態は、基板Ｗに自然酸化膜９３が形成された状態を示す。図４（ｂ）は、基板Ｗの第２状態を示す模式的断面図である。第２状態は、基板Ｗから薬液及びリンス液が除去された状態を示す。図４（ｃ）は、基板Ｗの第３状態を示す模式的断面図である。第３状態は、基板Ｗがエッチング液によってエッチングされた状態を示す。 Next, an example of the substrate W processed by the substrate processing apparatus 100 will be described. FIG. 4A is a schematic cross-sectional view showing a first state of the substrate W. The first state indicates a state where the native oxide film 93 is formed on the substrate W. FIG. 4B is a schematic cross-sectional view illustrating a second state of the substrate W. The second state indicates a state in which the chemical liquid and the rinsing liquid have been removed from the substrate W. FIG. 4C is a schematic sectional view showing a third state of the substrate W. The third state indicates a state in which the substrate W has been etched by the etchant.
　図４（ａ）に示すように、基板Ｗは、シリコン基板９０と、パターンＰＴとを有する。パターンＰＴはシリコン基板９０上に形成される。パターンＰＴは、積層膜９１と、単数又は複数の凹部９２とを含む。積層膜９１は、複数のポリシリコン膜Ｐ１～ＰＮ（Ｎは２以上の整数）と、複数の酸化シリコン膜Ｏ１～ＯＮ（Ｎは２以上の整数）とを含む。複数のポリシリコン膜Ｐ１～ＰＮ及び複数の酸化シリコン膜Ｏ１～ＯＮは、ポリシリコン膜と酸化シリコン膜とが交互に入れ替わるように、基板Ｗの厚み方向Ｄｔに沿って積層されている。厚み方向Ｄｔは、シリコン基板９０の表面に略直交する方向を示す。 4) As shown in FIG. 4A, the substrate W has a silicon substrate 90 and a pattern PT. The pattern PT is formed on the silicon substrate 90. The pattern PT includes a laminated film 91 and one or more concave portions 92. The stacked film 91 includes a plurality of polysilicon films P1 to PN (N is an integer of 2 or more) and a plurality of silicon oxide films O1 to ON (N is an integer of 2 or more). The plurality of polysilicon films P1 to PN and the plurality of silicon oxide films O1 to ON are stacked along the thickness direction Dt of the substrate W such that the polysilicon film and the silicon oxide film are alternately replaced. The thickness direction Dt indicates a direction substantially orthogonal to the surface of the silicon substrate 90.
　凹部９２は、基板Ｗの最表面Ｗｓからシリコン基板９０に向かって基板Ｗの厚み方向Ｄｔに沿って凹んでいる。凹部９２は、複数のポリシリコン膜Ｐ１～ＰＮ及び複数の酸化シリコン膜Ｏ１～ＯＮを基板Ｗの厚み方向Ｄｔに貫通している。ポリシリコン膜Ｐ１～ＰＮの側面及び酸化シリコン膜Ｏ１～ＯＮの側面は、凹部９２の側面９２ｓで露出している。凹部９２は、基板Ｗの最表面Ｗｓから凹んでいる限りにおいては、トレンチであってもよいし、ホールであってもよいし、特に限定されない。 (4) The recess 92 is recessed from the outermost surface Ws of the substrate W toward the silicon substrate 90 along the thickness direction Dt of the substrate W. The recess 92 penetrates the plurality of polysilicon films P1 to PN and the plurality of silicon oxide films O1 to ON in the thickness direction Dt of the substrate W. The side surfaces of the polysilicon films P1 to PN and the side surfaces of the silicon oxide films O1 to ON are exposed at the side surface 92s of the concave portion 92. The concave portion 92 may be a trench or a hole as long as it is concave from the outermost surface Ws of the substrate W, and is not particularly limited.
　以上、図４（ａ）を参照して説明したように、基板処理装置１００による処理対象の基板Ｗは、単数又は複数の凹部９２を含むパターンＰＴを有する。具体的には、基板処理装置１００による処理対象の基板Ｗは、ドライエッチング処理によって凹部９２を含むパターンＰＴが形成されている基板である。 As described above with reference to FIG. 4A, the substrate W to be processed by the substrate processing apparatus 100 has the pattern PT including one or more concave portions 92. Specifically, the substrate W to be processed by the substrate processing apparatus 100 is a substrate on which the pattern PT including the concave portion 92 has been formed by dry etching.
　また、基板処理装置１００による処理が開始される前は、ポリシリコン膜Ｐ１～ＰＮの表層及び酸化シリコン膜Ｏ１～ＯＮの表層に自然酸化膜９３が形成されている。二点鎖線は、自然酸化膜９３の輪郭を示している。 (4) Before the processing by the substrate processing apparatus 100 is started, the natural oxide film 93 is formed on the surface layers of the polysilicon films P1 to PN and the surface layers of the silicon oxide films O1 to ON. The two-dot chain line indicates the contour of the natural oxide film 93.
　図４（ａ）に示すように、実施形態１では、薬液としてのＤＨＦに基板Ｗを浸漬することによって、基板Ｗから自然酸化膜９３を除去する。そして、ＤＨＦが基板Ｗからリンス液によって除去され、更にリンス液が基板Ｗから除去される。 As shown in FIG. 4A, in the first embodiment, the natural oxide film 93 is removed from the substrate W by immersing the substrate W in DHF as a chemical solution. Then, the DHF is removed from the substrate W by the rinsing liquid, and the rinsing liquid is further removed from the substrate W.
　そして、図４（ｂ）に示すように、基板Ｗから薬液及びリンス液を除去された後に、エッチング液としてのＴＭＡＨに基板Ｗを浸漬することによって、図４（ｃ）に示すように、ポリシリコン膜Ｐ１～ＰＮが選択的にエッチングされる。その結果、複数のリセスＲ１が凹部９２の側面９２ｓに形成される。複数のリセスＲ１の各々は、基板Ｗの面方向Ｄｐに沿って凹んでいる。面方向Ｄｐは、基板Ｗの厚み方向Ｄｔに略直交する方向を示す。 Then, as shown in FIG. 4 (b), after the chemical solution and the rinsing liquid are removed from the substrate W, the substrate W is immersed in TMAH as an etching solution, so that the poly-metal is removed as shown in FIG. 4 (c). The silicon films P1 to PN are selectively etched. As a result, a plurality of recesses R1 are formed on the side surface 92s of the concave portion 92. Each of the plurality of recesses R1 is recessed along the surface direction Dp of the substrate W. The plane direction Dp indicates a direction substantially perpendicular to the thickness direction Dt of the substrate W.
　以上、図４（ａ）～図４（ｃ）を参照して説明したように、実施形態１によれば、エッチング処理の前に、基板Ｗから処理液（薬液及びリンス液）が除去される。つまり、エッチング処理の前に、基板Ｗの凹部９２から処理液が除去される。従って、エッチング液は、処理液中を濃度勾配に基づいて拡散するのではなく、処理液が入り込んでいない凹部９２に直接進入する。その結果、エッチング液の濃度勾配による拡散の時間を確保したプロセスを定めていない場合でも、基板Ｗに対するエッチング効果の低下を抑制できる。つまり、基板Ｗに対して、目標のエッチング量のエッチングを目標時間内に行うことができる。 As described above with reference to FIGS. 4A to 4C, according to the first embodiment, the processing liquid (the chemical liquid and the rinsing liquid) is removed from the substrate W before the etching processing. . That is, the processing liquid is removed from the concave portions 92 of the substrate W before the etching processing. Therefore, the etching liquid does not diffuse in the processing liquid based on the concentration gradient, but directly enters the concave portion 92 into which the processing liquid has not entered. As a result, even when a process in which the diffusion time is secured by the concentration gradient of the etchant is not defined, a decrease in the etching effect on the substrate W can be suppressed. That is, the etching of the target etching amount can be performed on the substrate W within the target time.
　特に、基板Ｗの最表面Ｗｓに対する凹部９２の深さが比較的深い場合でも、つまり、パターンＰＴのアスペクト比が比較的高い場合でも、エッチング液が凹部９２内に速やかに進入する。その結果、パターンＰＴのアスペクト比が比較的高い基板Ｗに対しても、エッチング効果の低下を抑制できる。パターンＰＴのアスペクト比とは、凹部９２の面方向Ｄｐの幅に対する厚み方向Ｄｔの深さの比率のことである。 Especially, even when the depth of the concave portion 92 with respect to the outermost surface Ws of the substrate W is relatively deep, that is, even when the aspect ratio of the pattern PT is relatively high, the etching liquid quickly enters the concave portion 92. As a result, a decrease in the etching effect can be suppressed even for the substrate W having a relatively high aspect ratio of the pattern PT. The aspect ratio of the pattern PT is the ratio of the depth in the thickness direction Dt to the width of the recess 92 in the plane direction Dp.
　ここで、一般的に、パターンの凹部に処理液が入り込んでいる場合では、凹部の比較的浅い位置まではエッチング液の流動によって、エッチング液が凹部に進入する。そして、流動による凹部への進入の限界位置よりも深い位置からは、処理液中を濃度勾配に基づく拡散によって、エッチング液が凹部の深い位置に進入する。従って、本発明は、凹部に処理液が入り込んでいる状態での流動による凹部への進入の限界位置よりも深い凹部９２を含むパターンＰＴを有する基板Ｗの処理に特に好適である。なお、実施形態１のようにエッチング処理の直前に凹部９２から処理液が除去された状態では、エッチング液の流動によって凹部９２の深い位置までエッチング液が進入する。 Here, in general, when the processing liquid enters the concave portion of the pattern, the etching liquid flows into the concave portion due to the flow of the etching liquid up to a relatively shallow position of the concave portion. Then, from a position deeper than the limit position of entry into the concave portion due to the flow, the etching liquid enters the deep position of the concave portion by diffusion in the processing liquid based on the concentration gradient. Therefore, the present invention is particularly suitable for processing a substrate W having a pattern PT including a concave portion 92 that is deeper than a limit position of entry into the concave portion due to the flow of the processing liquid in the concave portion. In a state where the processing liquid is removed from the concave portion 92 immediately before the etching process as in the first embodiment, the etching liquid flows into a deep position of the concave portion 92 due to the flow of the etching liquid.
　また、実施形態１によれば、エッチング液の濃度勾配による拡散の時間を確保したプロセスを定めることが要求されないため、基板Ｗの処理のスループットを向上できる。スループットとは、単位時間あたりの基板Ｗの処理枚数のことである。 According to the first embodiment, since it is not required to determine a process in which the diffusion time is secured by the concentration gradient of the etchant, the throughput of processing the substrate W can be improved. The throughput is the number of processed substrates W per unit time.
　次に、図１及び図５を参照して、実施形態１に係る基板処理方法を説明する。図５は、基板処理方法を示すフローチャートである。図５に示すように、基板処理方法は、工程Ｓ１～工程Ｓ５を含む。基板処理方法は、基板処理装置１００によって実行され、複数の基板Ｗを処理する。具体的には、処理部ＳＰ１が、工程Ｓ１～工程Ｓ５を実行する。 Next, a substrate processing method according to the first embodiment will be described with reference to FIGS. FIG. 5 is a flowchart showing a substrate processing method. As shown in FIG. 5, the substrate processing method includes steps S1 to S5. The substrate processing method is executed by the substrate processing apparatus 100 and processes a plurality of substrates W. Specifically, the processing unit SP1 performs steps S1 to S5.
　図１及び図５に示すように、工程Ｓ１において、処理部ＳＰ１は、複数の基板Ｗを処理液で処理する。実施形態１では、搬送機構ＣＶが複数の基板Ｗを処理部ＳＰ１の槽ＯＮＢ１に搬入する。そして、槽ＯＮＢ１が、複数の基板Ｗを処理液に浸漬して、複数の基板Ｗを処理液で処理する。工程Ｓ１は「処理工程」の一例に相当する。 As shown in FIGS. 1 and 5, in step S1, the processing unit SP1 processes a plurality of substrates W with a processing liquid. In the first embodiment, the transport mechanism CV loads a plurality of substrates W into the tank ONB1 of the processing unit SP1. Then, the tank ONB1 immerses the plurality of substrates W in the processing liquid and processes the plurality of substrates W with the processing liquid. Step S1 is an example of a “processing step”.
　工程Ｓ１の後に、工程Ｓ２において、処理部ＳＰ１は、複数の基板Ｗの凹部９２に入り込んでいる処理液を複数の基板Ｗから除去する。実施形態１では、搬送機構ＣＶが、槽ＯＮＢ１から複数の基板Ｗを搬出して、複数の基板Ｗを槽ＬＰＤ１に搬入する。そして、槽ＬＰＤ１が、複数の基板Ｗを乾燥して、複数の基板Ｗの凹部９２に入り込んでいる処理液を除去する。従って、本実施形態によれば、乾燥によって容易に凹部９２に入り込んでいる処理液を除去できる。工程Ｓ２は「除去工程」の一例に相当する。「工程Ｓ１の後に」は「基板Ｗを処理液で処理した後に」の一例に相当する。 (4) After step S1, in step S2, the processing unit SP1 removes the processing liquid that has entered the concave portions 92 of the plurality of substrates W from the plurality of substrates W. In the first embodiment, the transport mechanism CV carries out the plurality of substrates W from the tank ONB1 and carries the plurality of substrates W into the tank LPD1. Then, the tank LPD1 dries the plurality of substrates W and removes the processing liquid that has entered the concave portions 92 of the plurality of substrates W. Therefore, according to the present embodiment, it is possible to easily remove the processing liquid that has entered the recess 92 by drying. Step S2 corresponds to an example of a “removal step”. “After the step S1” corresponds to an example of “after processing the substrate W with the processing liquid”.
　特に実施形態１では、工程Ｓ２において、複数の槽ＴＡのうち基板Ｗが収容されている槽ＬＰＤ１内に水溶性の有機溶剤（ＩＰＡ）の蒸気を供給して、槽ＬＰＤ１内を減圧することによって基板Ｗを乾燥する。従って、複数の基板Ｗを更に効果的に乾燥できて、複数の基板Ｗの凹部９２に入り込んでいる処理液を比較的短時間で除去できる。 In particular, in the first embodiment, in step S2, a vapor of a water-soluble organic solvent (IPA) is supplied to the tank LPD1 in which the substrate W is housed among the plurality of tanks TA to reduce the pressure in the tank LPD1. The substrate W is dried. Therefore, the plurality of substrates W can be more effectively dried, and the processing liquid that has entered the concave portions 92 of the plurality of substrates W can be removed in a relatively short time.
　工程Ｓ２の後に、工程Ｓ３において、処理部ＳＰ１は、複数の基板Ｗをエッチング液（ＴＭＡＨ）でエッチングする。実施形態１では、搬送機構ＣＶが、槽ＬＰＤ１から複数の基板Ｗを搬出して、複数の基板Ｗを槽ＣＨＢ１に搬入する。そして、槽ＣＨＢ１が、複数の基板Ｗをエッチング液に浸漬して、複数の基板Ｗをエッチングする。工程Ｓ３は「エッチング工程」の一例に相当する。「工程Ｓ２の後に」は「処理液を基板Ｗから除去した後に」の一例に相当する。 (4) After step S2, in step S3, the processing unit SP1 etches the plurality of substrates W with an etchant (TMAH). In the first embodiment, the transport mechanism CV carries out the plurality of substrates W from the tank LPD1 and carries the plurality of substrates W into the tank CHB1. Then, the tank CHB1 immerses the plurality of substrates W in the etchant to etch the plurality of substrates W. Step S3 is an example of an “etching step”. “After the step S2” corresponds to an example of “after the processing liquid is removed from the substrate W”.
　工程Ｓ３の後に、工程Ｓ４において、処理部ＳＰ１は、リンス液によって基板Ｗからエッチング液を洗い流す。実施形態１では、搬送機構ＣＶが、槽ＣＨＢ１から複数の基板Ｗを搬出して、複数の基板Ｗを槽ＯＮＢ１に搬入する。そして、槽ＯＮＢ１が、複数の基板Ｗをリンス液に浸漬して、複数の基板Ｗからエッチング液を洗い流す。 (4) After step S3, in step S4, the processing unit SP1 rinses the etching liquid from the substrate W with the rinse liquid. In the first embodiment, the transport mechanism CV unloads the plurality of substrates W from the tank CHB1 and loads the plurality of substrates W into the tank ONB1. Then, the tank ONB1 immerses the plurality of substrates W in the rinsing liquid to wash away the etching liquid from the plurality of substrates W.
　工程Ｓ４の後に、工程Ｓ５において、処理部ＳＰ１は、基板Ｗを乾燥して、基板Ｗからリンス液を除去する。実施形態１では、搬送機構ＣＶが、槽ＯＮＢ１から複数の基板Ｗを搬出して、複数の基板Ｗを槽ＬＰＤ１に搬入する。そして、槽ＬＰＤ１が、複数の基板Ｗを乾燥して、複数の基板Ｗからリンス液を除去する。 (4) After step S4, in step S5, the processing unit SP1 dries the substrate W and removes the rinsing liquid from the substrate W. In the first embodiment, the transport mechanism CV carries out the plurality of substrates W from the tank ONB1 and carries the plurality of substrates W into the tank LPD1. Then, the tank LPD1 dries the plurality of substrates W and removes the rinsing liquid from the plurality of substrates W.
　以上、図１及び図５を参照して説明したように、実施形態１によれば、工程Ｓ３のエッチング処理の前に、工程Ｓ２において複数の基板Ｗから処理液が除去される。つまり、エッチング処理の前に基板Ｗの凹部９２から処理液が除去される。従って、エッチング液は、処理液が入り込んでいない凹部９２に直接進入する。その結果、複数の基板Ｗに対するエッチング効果の低下を抑制できる。 As described above with reference to FIGS. 1 and 5, according to the first embodiment, the processing liquid is removed from the plurality of substrates W in step S2 before the etching process in step S3. That is, the processing liquid is removed from the concave portions 92 of the substrate W before the etching processing. Therefore, the etching liquid directly enters the recess 92 into which the processing liquid has not entered. As a result, a decrease in the etching effect on the plurality of substrates W can be suppressed.
　特に、実施形態１では、工程Ｓ１～工程Ｓ５は、工程Ｓ１～工程Ｓ５の途中で払出部７が基板処理装置１００の外部に処理途中の基板Ｗを払い出すことなく、基板処理装置１００の内部で実行される一連の工程である。つまり、工程Ｓ１～工程Ｓ５は、基板処理装置１００の内部の複数の槽ＴＡによって実行される一連の工程である。従って、１台の基板処理装置１００の内部で実行される一連の工程の中で、エッチング処理の前に凹部９２から処理液を除去することで、複数の基板Ｗに対するエッチング効果の低下を抑制している。 In particular, in the first embodiment, steps S1 to S5 are performed inside the substrate processing apparatus 100 without the payout unit 7 discharging the substrate W being processed to the outside of the substrate processing apparatus 100 during the steps S1 to S5. This is a series of steps executed in That is, the steps S1 to S5 are a series of steps executed by the plurality of tanks TA inside the substrate processing apparatus 100. Therefore, in a series of steps executed inside one substrate processing apparatus 100, the processing liquid is removed from the concave portion 92 before the etching processing, thereby suppressing a decrease in the etching effect on the plurality of substrates W. ing.
　なお、工程Ｓ１～工程Ｓ５を１バッチ処理とすると、基板処理装置１００は、複数のバッチ処理を並行して実行してもよい。この場合、第１処理部１９～第３処理部２１と乾燥処理部１７とが適宜使用される。 Note that assuming that steps S1 to S5 are one batch process, the substrate processing apparatus 100 may execute a plurality of batch processes in parallel. In this case, the first to third processing units 19 to 21 and the drying processing unit 17 are appropriately used.
　また、実施形態１では、工程Ｓ１は、工程Ｓ１１と、工程Ｓ１２とを含む。 In the first embodiment, the step S1 includes the step S11 and the step S12.
　工程Ｓ１１において、処理部ＳＰ１は、複数の基板Ｗに対して前処理を行う。具体的には、処理部ＳＰ１は、複数の基板Ｗを薬液（ＤＨＦ）で処理する。工程Ｓ１１は「薬液工程」の一例に相当する。実施形態１では、槽ＯＮＢ１が、複数の基板Ｗを薬液に浸漬して、複数の基板Ｗを薬液で処理する。 (4) In step S11, the processing unit SP1 performs pre-processing on a plurality of substrates W. Specifically, the processing unit SP1 processes the plurality of substrates W with a chemical (DHF). Step S11 corresponds to an example of a “chemical solution step”. In the first embodiment, the tank ONB1 immerses the plurality of substrates W in the chemical solution and processes the plurality of substrates W with the chemical solution.
　特に、工程Ｓ１１では、槽ＯＮＢ１が、複数の基板Ｗに形成された自然酸化膜９３を薬液（ＤＨＦ）によって除去する。その結果、工程Ｓ３での複数の基板Ｗに対するエッチング処理を更に効果的に実行できる。 Particularly, in step S11, the tank ONB1 removes the natural oxide film 93 formed on the plurality of substrates W using a chemical (DHF). As a result, the etching process on the plurality of substrates W in the step S3 can be more effectively executed.
　工程Ｓ１２において、処理部ＳＰ１は、リンス液（ＤＩＷ）によって複数の基板Ｗから薬液を洗い流す。工程Ｓ１２は「リンス工程」の一例に相当する。「リンス液」は「処理液としてのリンス液」の一例に相当する。実施形態１では、槽ＯＮＢ１が、工程Ｓ１１で使用した薬液をリンス液に入れ替え、複数の基板Ｗをリンス液に浸漬して、リンス液によって複数の基板Ｗから薬液を洗い流す。 (4) In step S12, the processing unit SP1 rinses the chemicals from the plurality of substrates W with a rinsing liquid (DIW). Step S12 corresponds to an example of a “rinsing step”. “Rinse liquid” corresponds to an example of “rinse liquid as a processing liquid”. In the first embodiment, the tank ONB1 replaces the chemical used in step S11 with a rinsing liquid, immerses the plurality of substrates W in the rinsing liquid, and rinses the chemical from the plurality of substrates W with the rinsing liquid.
　そして、工程Ｓ１２の後の工程Ｓ２において、処理部ＳＰ１は、複数の基板Ｗの凹部９２に入り込んでいるリンス液を複数の基板Ｗから除去する。 Then, in step S2 after step S12, the processing unit SP1 removes the rinsing liquid that has entered the concave portions 92 of the plurality of substrates W from the plurality of substrates W.
　従って、実施形態１によれば、工程Ｓ３のエッチング処理の前に、工程Ｓ２において複数の基板Ｗの凹部９２からリンス液が除去される。従って、エッチング液は、リンス液が入り込んでいない凹部９２に直接進入する。その結果、複数の基板Ｗに対するエッチング効果の低下を抑制できる。 Therefore, according to the first embodiment, the rinsing liquid is removed from the concave portions 92 of the plurality of substrates W in step S2 before the etching process in step S3. Therefore, the etching liquid directly enters the recess 92 into which the rinsing liquid has not entered. As a result, a decrease in the etching effect on the plurality of substrates W can be suppressed.
　なお、工程Ｓ１は、工程Ｓ１１及び工程Ｓ１２のうちのいずれか１つの工程を含んでいてもよい。例えば、工程Ｓ１が工程Ｓ１１だけを含んでいる場合は、工程Ｓ２において、処理部ＳＰ１は、複数の基板Ｗの凹部９２に入り込んでいる薬液を複数の基板Ｗから除去する。具体的には、槽ＬＰＤ１が、複数の基板Ｗを乾燥して、複数の基板Ｗの凹部９２に入り込んでいる薬液を除去する。 Step S1 may include any one of step S11 and step S12. For example, when the step S1 includes only the step S11, the processing unit SP1 removes the chemical solution that has entered the concave portions 92 of the plurality of substrates W from the plurality of substrates W in step S2. Specifically, the tank LPD1 dries the plurality of substrates W and removes the chemical solution that has entered the concave portions 92 of the plurality of substrates W.
　また、本発明は、工程Ｓ３で使用するエッチング液がアルカリ性のエッチング液である場合に特に有効である。有効な理由は次の通りである。 The present invention is particularly effective when the etchant used in step S3 is an alkaline etchant. The valid reasons are as follows.
　すなわち、一般的に、アルカリ性のエッチング液では、自然酸化膜を除去できないため、エッチング処理の前に、薬液（ＤＨＦ）によって自然酸化膜を除去することが要求される。従って、エッチング処理の前に、薬液が凹部９２に入り込んだり、薬液を除去するためのリンス液が凹部９２に入り込んだりする可能性がある。そこで、エッチング効果の低下を抑制するために、エッチング処理の前に凹部９２から薬液及びリンス液を除去することは特に有効である。 That is, in general, a natural oxide film cannot be removed with an alkaline etching solution, so it is necessary to remove the natural oxide film with a chemical solution (DHF) before the etching process. Therefore, before the etching process, there is a possibility that the chemical solution enters the concave portion 92 and a rinsing liquid for removing the chemical solution enters the concave portion 92. Therefore, it is particularly effective to remove the chemical solution and the rinsing solution from the concave portion 92 before the etching process in order to suppress a decrease in the etching effect.
　また、本発明は、工程Ｓ３で使用するエッチング液が比較的粘度の高いエッチング液である場合に特に有効である。有効な理由は次の通りである。 The present invention is particularly effective when the etchant used in step S3 is an etchant having a relatively high viscosity. The valid reasons are as follows.
　すなわち、仮に凹部９２にリンス液等の処理液が入り込んだ状態でエッチング液を供給すると、凹部９２の深い位置までエッチング液が拡散によって進入する時間は、粘度の高いエッチング液の方が、粘度の低いエッチング液よりも長くなる。そこで、粘度の高いエッチング液を使用してエッチング処理を実行する場合は、エッチング効果の低下を抑制するために、エッチング処理の前にリンス液等の処理液を除去する必要性は大きい。 That is, if the etching liquid is supplied in a state in which the processing liquid such as the rinsing liquid has entered the concave portion 92, the etching liquid having a higher viscosity has a longer time to enter the deeper position of the concave portion 92 by diffusion. Longer than lower etchants. Therefore, when performing an etching process using an etching solution having a high viscosity, it is necessary to remove a processing solution such as a rinse solution before the etching process in order to suppress a decrease in the etching effect.
　特に、エッチング液としてＴＭＡＨを含む水溶液を使用する場合は、本発明は特に有効である。なぜなら、ＴＭＡＨは、アルカリ性であるとともに、比較的粘度が高いからである。 The present invention is particularly effective when an aqueous solution containing TMAH is used as an etching solution. This is because TMAH is alkaline and has relatively high viscosity.
　ここで、図５に示すように、工程３のエッチング処理の前に工程２の除去処理を実行する限りにおいては、工程Ｓ１（工程Ｓ１１及び工程Ｓ１２）～工程Ｓ５は、基板処理装置１００の複数の槽ＴＡのうち、任意の槽ＴＡを使用して実行できる。 Here, as shown in FIG. 5, as long as the removal process of the step 2 is performed before the etching process of the step 3, the steps S1 (steps S11 and S12) to S5 include a plurality of steps of the substrate processing apparatus 100. Can be performed using any one of the tanks TA.
　例えば、工程Ｓ１１において、槽ＯＮＢ１が、複数の基板Ｗを薬液（ＤＨＦ）で処理する。工程Ｓ１２において、槽ＯＮＢ１が、複数の基板Ｗからリンス液（ＤＩＷ）によって薬液を洗い流す。工程Ｓ２において、槽ＬＰＤ１が、複数の基板Ｗを乾燥して基板Ｗの凹部９２からリンス液を除去する。工程Ｓ３において、槽ＯＮＢ１が、複数の基板Ｗをエッチング液（ＴＭＡＨ）でエッチングする。工程Ｓ４において、槽ＯＮＢ１が、複数の基板Ｗからリンス液によってエッチング液を洗い流す。工程Ｓ５において、槽ＬＰＤ１が、複数の基板Ｗを乾燥して、複数の基板Ｗからリンス液を除去する。この例では、工程Ｓ１～工程Ｓ５が２つの槽ＴＡ（槽ＯＮＢ１及び槽ＬＰＤ１）で実行される。従って、工程Ｓ１～工程Ｓ５ごとに槽ＴＡを用意する場合と比較して、基板処理装置１００のコストを低減できる。また、搬送機構ＣＶによる基板Ｗの搬入及び搬出の制御を簡素化できる。 For example, in step S11, the tank ONB1 processes the plurality of substrates W with a chemical (DHF). In step S12, the tank ONB1 rinses the chemicals from the plurality of substrates W with a rinsing liquid (DIW). In step S2, the tank LPD1 dries the plurality of substrates W to remove the rinsing liquid from the concave portions 92 of the substrates W. In step S3, the tank ONB1 etches the plurality of substrates W with an etchant (TMAH). In step S4, the tank ONB1 rinses the etching liquid from the plurality of substrates W with the rinsing liquid. In step S5, the bath LPD1 dries the plurality of substrates W and removes the rinsing liquid from the plurality of substrates W. In this example, steps S1 to S5 are executed in two tanks TA (tank ONB1 and tank LPD1). Therefore, the cost of the substrate processing apparatus 100 can be reduced as compared with the case where the tank TA is prepared for each of the steps S1 to S5. Further, control of loading and unloading of the substrate W by the transport mechanism CV can be simplified.
　例えば、図３に示す槽ＬＰＤ１に対して、図２に示す薬液供給源２３及びエッチング液供給源２７を接続することができる。この場合は、例えば、工程Ｓ１１において、槽ＬＰＤ１が、複数の基板Ｗを薬液（ＤＨＦ）で処理する。工程Ｓ１２において、槽ＬＰＤ１が、複数の基板Ｗからリンス液（ＤＩＷ）によって薬液を洗い流す。工程Ｓ２において、槽ＬＰＤ１が、複数の基板Ｗを乾燥して基板Ｗの凹部９２からリンス液を除去する。工程Ｓ３において、槽ＬＰＤ１が、複数の基板Ｗをエッチング液（ＴＭＡＨ）でエッチングする。工程Ｓ４において、槽ＬＰＤ１が、複数の基板Ｗからリンス液によってエッチング液を洗い流す。工程Ｓ５において、槽ＬＰＤ１が、複数の基板Ｗを乾燥して、複数の基板Ｗからリンス液を除去する。この例では、工程Ｓ１～工程Ｓ５が１つの槽ＬＰＤ１で実行される。従って、基板処理装置１００のコストを更に低減できる。また、搬送機構ＣＶによる基板Ｗの搬入及び搬出の制御を更に簡素化できる。 For example, the chemical liquid supply source 23 and the etching liquid supply source 27 shown in FIG. 2 can be connected to the tank LPD1 shown in FIG. In this case, for example, in step S11, the tank LPD1 processes the plurality of substrates W with a chemical (DHF). In step S12, the tank LPD1 rinses the chemicals from the plurality of substrates W with a rinsing liquid (DIW). In step S2, the bath LPD1 dries the plurality of substrates W and removes the rinsing liquid from the concave portions 92 of the substrates W. In step S3, the bath LPD1 etches the plurality of substrates W with an etchant (TMAH). In step S4, the bath LPD1 rinses the etching liquid from the plurality of substrates W with a rinsing liquid. In step S5, the bath LPD1 dries the plurality of substrates W and removes the rinsing liquid from the plurality of substrates W. In this example, steps S1 to S5 are executed in one tank LPD1. Therefore, the cost of the substrate processing apparatus 100 can be further reduced. Further, the control of loading and unloading of the substrate W by the transport mechanism CV can be further simplified.
　また、図５に示す工程Ｓ１と工程Ｓ２と工程Ｓ３とのうちの少なくとも２以上の工程が、同一槽ＴＡ内で実行されてもよい。使用されない槽ＴＡが存在することを抑制して、基板Ｗの処理のスループットを向上できるからである。工程Ｓ１と工程Ｓ２と工程Ｓ３との全てを同一槽ＴＡ内で実行してもよい。基板Ｗの処理のスループットを更に向上できるからである。また、工程Ｓ１１と工程Ｓ１２とは、同一槽ＴＡ内で実行されてもよいし、異なる槽ＴＡ内で実行されてもよい。 (5) At least two or more of the steps S1, S2, and S3 shown in FIG. 5 may be executed in the same tank TA. This is because the presence of the unused tank TA can be suppressed, and the processing throughput of the substrate W can be improved. All of Step S1, Step S2, and Step S3 may be performed in the same tank TA. This is because the throughput of processing the substrate W can be further improved. Step S11 and step S12 may be executed in the same tank TA or may be executed in different tanks TA.
　なお、工程Ｓ１～工程Ｓ５のうちの少なくとも２以上の工程が、同一槽ＴＡ内で実行されてもよい。また、工程Ｓ１～工程Ｓ５の全てが同一槽ＴＡ内で実行されてもよい。 At least two or more of the steps S1 to S5 may be performed in the same tank TA. Further, all of the steps S1 to S5 may be executed in the same tank TA.
　また、図５に示す工程Ｓ２では、複数の基板Ｗを槽ＴＡで乾燥させることに代えて、次のようにして、複数の基板Ｗを乾燥することもできる。 In the step S2 shown in FIG. 5, instead of drying the plurality of substrates W in the bath TA, the plurality of substrates W can be dried as follows.
　すなわち、工程Ｓ１の処理を行った槽ＴＡ（例えば槽ＯＮＢ１）から工程Ｓ３のエッチング処理を行う別の槽ＴＡ（例えば槽ＣＨＢ１）に搬送機構ＣＶが複数の基板Ｗを移動中の経路において、複数の基板Ｗに不活性ガス（例えば窒素ガス）を吹き付けて、複数の基板Ｗを乾燥し、凹部９２から処理液を除去する。 That is, the transfer mechanism CV moves a plurality of substrates W from the tank TA (for example, the tank ONB1) that has performed the process of step S1 to another tank TA (for example, the tank CHB1) that performs the etching process of step S3. An inert gas (for example, nitrogen gas) is sprayed on the substrate W to dry the plurality of substrates W and remove the processing liquid from the concave portions 92.
　（実施形態２）
　図６及び図７を参照して、本発明の実施形態２に係る基板処理装置１００Ａ及び基板処理方法を説明する。実施形態２に係る基板処理装置１００Ａが枚葉式である点で、実施形態２は実施形態１と主に異なる。枚葉式とは、基板Ｗを１枚ずつ処理する方式のことである。以下、実施形態２が実施形態１と異なる点を主に説明する。 (Embodiment 2)
A substrate processing apparatus 100A and a substrate processing method according to Embodiment 2 of the present invention will be described with reference to FIGS. Embodiment 2 is mainly different from Embodiment 1 in that the substrate processing apparatus 100A according to Embodiment 2 is of a single-wafer type. The single-wafer method is a method of processing the substrates W one by one. Hereinafter, differences between the second embodiment and the first embodiment will be mainly described.
　まず、図６を参照して実施形態２に係る基板処理装置１００Ａを説明する。図６は、基板処理装置１００Ａを示す模式的断面図である。図６に示すように、基板処理装置１００Ａは、処理部ＳＰ２を備える。 First, the substrate processing apparatus 100A according to the second embodiment will be described with reference to FIG. FIG. 6 is a schematic sectional view showing the substrate processing apparatus 100A. As shown in FIG. 6, the substrate processing apparatus 100A includes a processing unit SP2.
　処理部ＳＰ２は、基板Ｗを回転しながら、基板Ｗに処理液を吐出して、基板Ｗを処理する。具体的には、処理部ＳＰ２は、チャンバー１０５と、スピンチャック１０７と、スピンモーター９５と、ノズル１１１と、ノズル移動部１１３と、ノズル１１５と、ノズル１１７と、ノズル移動部１１９と、流体供給ユニット１２１と、ユニット移動部１２６とを含む。 (4) The processing unit SP2 processes the substrate W by discharging the processing liquid onto the substrate W while rotating the substrate W. Specifically, the processing unit SP2 includes the chamber 105, the spin chuck 107, the spin motor 95, the nozzle 111, the nozzle moving unit 113, the nozzle 115, the nozzle 117, the nozzle moving unit 119, the fluid supply A unit 121 and a unit moving unit 126 are included.
　チャンバー１０５は略箱形状を有する。チャンバー１０５は、基板Ｗ、スピンチャック１０７、スピンモーター９５、ノズル１１１、ノズル移動部１１３、ノズル１１５、ノズル１１７、ノズル移動部１１９、流体供給ユニット１２１、及びユニット移動部１２６を収容する。 The chamber 105 has a substantially box shape. The chamber 105 houses the substrate W, the spin chuck 107, the spin motor 95, the nozzle 111, the nozzle moving unit 113, the nozzle 115, the nozzle 117, the nozzle moving unit 119, the fluid supply unit 121, and the unit moving unit 126.
　スピンチャック１０７は、基板Ｗを保持して回転する。具体的には、スピンチャック１０７は、チャンバー１０５内で基板Ｗを水平に保持しながら、回転軸線ＡＸ１の回りに基板Ｗを回転させる。 The spin chuck 107 rotates while holding the substrate W. Specifically, the spin chuck 107 rotates the substrate W around the rotation axis AX1 while holding the substrate W horizontally in the chamber 105.
　スピンチャック１０７は、複数のチャック部材１７０と、スピンベース１７１とを含む。複数のチャック部材１７０はスピンベース１７１に設けられる。複数のチャック部材１７０は基板Ｗを水平な姿勢で保持する。スピンベース１７１は、略円板状であり、水平な姿勢で複数のチャック部材１７０を支持する。スピンモーター９５は、スピンベース１７１を回転軸線ＡＸ１の回りに回転させる。従って、スピンベース１７１は回転軸線ＡＸ１の回りに回転する。その結果、スピンベース１７１に設けられた複数のチャック部材１７０に保持された基板Ｗが回転軸線ＡＸ１の回りに回転する。 The spin chuck 107 includes a plurality of chuck members 170 and a spin base 171. The plurality of chuck members 170 are provided on the spin base 171. The plurality of chuck members 170 hold the substrate W in a horizontal posture. The spin base 171 has a substantially disk shape and supports the plurality of chuck members 170 in a horizontal posture. The spin motor 95 rotates the spin base 171 around the rotation axis AX1. Therefore, the spin base 171 rotates around the rotation axis AX1. As a result, the substrate W held by the plurality of chuck members 170 provided on the spin base 171 rotates around the rotation axis AX1.
　ノズル１１１は、基板Ｗの回転中に基板Ｗに向けて薬液を吐出する。薬液は、図２を参照して説明した実施形態１に係る薬液と同様である。実施形態２では、薬液はＤＨＦである。ノズル移動部１１３は、回動軸線ＡＸ２の回りに回動して、ノズル１１１の処理位置と待機位置との間で、ノズル１１１を水平に移動させる。 The nozzle 111 discharges a chemical solution toward the substrate W while the substrate W is rotating. The chemical is the same as the chemical according to the first embodiment described with reference to FIG. In the second embodiment, the drug solution is DHF. The nozzle moving unit 113 rotates around the rotation axis AX2 to move the nozzle 111 horizontally between the processing position of the nozzle 111 and the standby position.
　ノズル１１５は、基板Ｗの回転中に基板Ｗに向けてリンス液を吐出する。リンス液は、図２を参照して説明した実施形態１に係るリンス液と同様である。実施形態２では、リンス液は純水（ＤＩＷ）である。 The nozzle 115 discharges a rinsing liquid toward the substrate W while the substrate W is rotating. The rinsing liquid is the same as the rinsing liquid according to the first embodiment described with reference to FIG. In the second embodiment, the rinsing liquid is pure water (DIW).
　ノズル１１７は、基板Ｗに向けてエッチング液を吐出する。エッチング液は、図２を参照して説明した実施形態１に係るエッチング液と同様である。実施形態２では、エッチング液はＴＭＡＨを含む水溶液である。ノズル移動部１１９は、回動軸線ＡＸ３の回りに回動して、ノズル１１７の処理位置と待機位置との間で、ノズル１１７を水平に移動させる。 The nozzle 117 discharges the etching liquid toward the substrate W. The etchant is the same as the etchant according to the first embodiment described with reference to FIG. In the second embodiment, the etching solution is an aqueous solution containing TMAH. The nozzle moving unit 119 rotates around the rotation axis AX3 to horizontally move the nozzle 117 between the processing position of the nozzle 117 and the standby position.
　流体供給ユニット１２１は、スピンチャック１０７の上方に位置する。流体供給ユニット１２１は、吐出口１２２ａから窒素ガス（Ｎ2）を基板Ｗに向けて吐出する。流体供給ユニット１２１は、吐出口１２３ａからリンス液を基板Ｗに向けて吐出する。リンス液は、図２を参照して説明した実施形態１に係るリンス液と同様である。実施形態２では、リンス液は純水（ＤＩＷ）である。流体供給ユニット１２１は、吐出口１２４ａから水溶性の有機溶剤の蒸気を基板Ｗに向けて吐出する。実施形態２では、図３を参照して説明した実施形態１と同様に、水溶性の有機溶剤の蒸気は、ＩＰＡの蒸気である。 The fluid supply unit 121 is located above the spin chuck 107. The fluid supply unit 121 discharges nitrogen gas (N 2 ) from the discharge port 122a toward the substrate W. The fluid supply unit 121 discharges the rinsing liquid from the discharge port 123a toward the substrate W. The rinsing liquid is the same as the rinsing liquid according to the first embodiment described with reference to FIG. In the second embodiment, the rinsing liquid is pure water (DIW). The fluid supply unit 121 discharges the vapor of the water-soluble organic solvent toward the substrate W from the discharge port 124a. In the second embodiment, similarly to the first embodiment described with reference to FIG. 3, the vapor of the water-soluble organic solvent is the vapor of IPA.
　ユニット移動部１２６は、流体供給ユニット１２１を鉛直方向に沿って上昇又は下降させる。流体供給ユニット１２１が、窒素ガス、リンス液、及びＩＰＡを基板Ｗに吐出する際には、ユニット移動部１２６は、流体供給ユニット１２１を下降させている。 The unit moving unit 126 raises or lowers the fluid supply unit 121 along the vertical direction. When the fluid supply unit 121 discharges the nitrogen gas, the rinsing liquid, and the IPA onto the substrate W, the unit moving unit 126 moves down the fluid supply unit 121.
　次に、図４（ａ）、図６、及び図７を参照して、実施形態２に係る基板処理方法を説明する。図７は、基板処理方法を示すフローチャートである。図７に示すように、基板処理方法は、工程Ｓ２１～工程Ｓ２９を含む。基板処理方法は、基板処理装置１００Ａによって実行され、基板Ｗを処理する。具体的には、処理部ＳＰ２が、工程Ｓ２１～工程Ｓ２９を実行する。 Next, a substrate processing method according to the second embodiment will be described with reference to FIGS. 4A, 6, and 7. FIG. FIG. 7 is a flowchart showing the substrate processing method. As shown in FIG. 7, the substrate processing method includes steps S21 to S29. The substrate processing method is executed by the substrate processing apparatus 100A, and processes the substrate W. Specifically, the processing unit SP2 performs steps S21 to S29.
　図６及び図７に示すように、工程Ｓ２１において、搬送機構（不図示）が、１枚の基板Ｗを処理部ＳＰ２に搬入する。 (6) As shown in FIGS. 6 and 7, in step S21, a transport mechanism (not shown) carries one substrate W into the processing unit SP2.
　工程Ｓ２２において、処理部ＳＰ２が基板Ｗの回転を開始する。実施形態２では、スピンチャック１０７が基板Ｗの回転を開始する。 (4) In step S22, the processing unit SP2 starts rotating the substrate W. In the second embodiment, the spin chuck 107 starts rotating the substrate W.
　工程Ｓ２３において、処理部ＳＰ２は、チャンバー１０５内で基板Ｗを回転させながら、処理液を基板Ｗに供給して基板Ｗを処理液で処理する。工程Ｓ２３は「処理工程」の一例に相当する。 In step S23, the processing unit SP2 supplies the processing liquid to the substrate W while rotating the substrate W in the chamber 105, and processes the substrate W with the processing liquid. Step S23 corresponds to an example of a “processing step”.
　工程Ｓ２３の後に、工程Ｓ２４において、処理部ＳＰ２は、チャンバー１０５内で基板Ｗを回転させながら、基板Ｗの凹部９２に入り込んでいる処理液を基板Ｗから除去する。実施形態２では、処理部ＳＰ２は、チャンバー１０５内で基板Ｗを回転させながら、基板Ｗを乾燥して、基板Ｗの凹部９２に入り込んでいる処理液を除去する。工程Ｓ２４は「除去工程」の一例に相当する。 (4) After step S23, in step S24, the processing unit SP2 removes the processing liquid that has entered the recess 92 of the substrate W from the substrate W while rotating the substrate W in the chamber 105. In the second embodiment, the processing unit SP2 dries the substrate W while rotating the substrate W in the chamber 105, and removes the processing liquid that has entered the concave portion 92 of the substrate W. Step S24 corresponds to an example of a “removal step”.
　工程Ｓ２４の後に、工程Ｓ２５において、処理部ＳＰ２は、チャンバー１０５内で基板Ｗを回転させながら、エッチング液（ＴＭＡＨ）を基板Ｗに供給して基板Ｗをエッチング液でエッチングする。実施形態２では、ノズル１１７が、基板Ｗにエッチング液を吐出して、基板Ｗをエッチングする。工程Ｓ２５は「エッチング工程」の一例に相当する。 (4) After step S24, in step S25, the processing unit SP2 supplies the etchant (TMAH) to the substrate W while rotating the substrate W in the chamber 105, and etches the substrate W with the etchant. In the second embodiment, the nozzle 117 discharges an etchant to the substrate W to etch the substrate W. Step S25 corresponds to an example of an “etching step”.
　工程Ｓ２５の後に、工程Ｓ２６において、処理部ＳＰ２は、チャンバー１０５内で基板Ｗを回転させながら、リンス液（ＤＩＷ）を基板Ｗに供給してリンス液によって基板Ｗからエッチング液を洗い流す。実施形態２では、ノズル１１５が、基板Ｗにリンス液を吐出して、基板Ｗからエッチング液を洗い流す。 (4) After step S25, in step S26, the processing unit SP2 supplies the rinsing liquid (DIW) to the substrate W while rotating the substrate W in the chamber 105, and rinses the etching liquid from the substrate W with the rinsing liquid. In the second embodiment, the nozzle 115 discharges the rinsing liquid onto the substrate W to wash away the etching liquid from the substrate W.
　工程Ｓ２６の後に、工程Ｓ２７において、処理部ＳＰ２は、チャンバー１０５内で基板Ｗを回転させながら、基板Ｗを乾燥する。 (4) After step S26, in step S27, the processing unit SP2 dries the substrate W while rotating the substrate W in the chamber 105.
　工程Ｓ２７の後に、工程Ｓ２８において、処理部ＳＰ２が基板Ｗの回転を停止する。 (4) After step S27, in step S28, the processing unit SP2 stops the rotation of the substrate W.
　工程Ｓ２８の後に、工程Ｓ２９において、搬送機構（不図示）が、１枚の基板Ｗを処理部ＳＰ２から搬出する。 (4) After step S28, in step S29, the transport mechanism (not shown) unloads one substrate W from the processing unit SP2.
　以上、図６及び図７を参照して説明したように、実施形態２によれば、工程Ｓ２５のエッチング処理の前に、工程Ｓ２４において基板Ｗから処理液が除去される。つまり、エッチング処理の前に凹部９２から処理液が除去される。従って、エッチング液は、処理液が入り込んでいない凹部９２に直接進入する。その結果、基板Ｗに対するエッチング効果の低下を抑制できる。 According to the second embodiment, as described above with reference to FIGS. 6 and 7, the processing liquid is removed from the substrate W in the step S24 before the etching in the step S25. That is, the processing liquid is removed from the concave portion 92 before the etching process. Therefore, the etching liquid directly enters the recess 92 into which the processing liquid has not entered. As a result, a decrease in the etching effect on the substrate W can be suppressed.
　また、実施形態２では、工程Ｓ２３は、工程Ｓ２３１と、工程Ｓ２３２とを含む。 In addition, in the second embodiment, step S23 includes step S231 and step S232.
　工程Ｓ２３１において、処理部ＳＰ２は、基板Ｗを回転させながら、基板Ｗに対して前処理を行う。具体的には、処理部ＳＰ２は、基板Ｗを回転させながら、薬液（ＤＨＦ）を基板Ｗに供給して基板Ｗを薬液で処理する。工程Ｓ２３１は「薬液工程」の一例に相当する。実施形態２では、ノズル１１１が、基板Ｗに薬液を吐出して、基板Ｗを薬液で処理する。 In step S231, the processing unit SP2 performs pre-processing on the substrate W while rotating the substrate W. Specifically, the processing unit SP2 supplies the chemical (DHF) to the substrate W while rotating the substrate W, and processes the substrate W with the chemical. Step S231 corresponds to an example of a “chemical solution step”. In the second embodiment, the nozzle 111 discharges a chemical solution to the substrate W, and processes the substrate W with the chemical solution.
　特に、工程Ｓ２３１では、ノズル１１１が、基板Ｗに形成された自然酸化膜９３を薬液（ＤＨＦ）によって除去する。 In particular, in step S231, the nozzle 111 removes the natural oxide film 93 formed on the substrate W using a chemical (DHF).
　工程Ｓ２３２において、処理部ＳＰ２は、基板Ｗを回転させながら、リンス液（ＤＩＷ）を基板Ｗに供給してリンス液によって基板Ｗから薬液を洗い流す。工程Ｓ２３２は「リンス工程」の一例に相当する。実施形態２では、流体供給ユニット１２１が、吐出口１２３ａから基板Ｗにリンス液を吐出して、リンス液によって基板Ｗから薬液を洗い流す。 (4) In step S232, the processing unit SP2 supplies the rinsing liquid (DIW) to the substrate W while rotating the substrate W, and rinses the chemical liquid from the substrate W with the rinsing liquid. Step S232 corresponds to an example of a “rinsing step”. In the second embodiment, the fluid supply unit 121 discharges the rinsing liquid from the discharge port 123a to the substrate W, and rinses the chemical liquid from the substrate W with the rinsing liquid.
　そして、工程Ｓ２３２の後の工程Ｓ２４において、処理部ＳＰ２は、基板Ｗを回転させながら基板Ｗを乾燥して、基板Ｗの凹部９２に入り込んでいるリンス液を基板Ｗから除去する。実施形態２では、工程Ｓ２４において、流体供給ユニット１２１は、吐出口１２２ａから基板Ｗにキャリアガスとしての窒素ガスを吐出する。さらに、流体供給ユニット１２１は、吐出口１２４ａから基板Ｗに、水溶性の有機溶剤（ＩＰＡ）の蒸気を吐出して、基板Ｗを回転させながら基板Ｗを乾燥する。 Then, in step S <b> 24 after step S <b> 232, the processing unit SP <b> 2 dries the substrate W while rotating the substrate W, and removes the rinsing liquid that has entered the concave portions 92 of the substrate W from the substrate W. In the second embodiment, in step S24, the fluid supply unit 121 discharges nitrogen gas as a carrier gas to the substrate W from the discharge port 122a. Further, the fluid supply unit 121 discharges a vapor of a water-soluble organic solvent (IPA) from the discharge port 124a to the substrate W, and dries the substrate W while rotating the substrate W.
　従って、実施形態２によれば、工程Ｓ２５のエッチング処理の前に、工程Ｓ２４において基板Ｗの凹部９２からリンス液が除去される。従って、エッチング液は、リンス液が入り込んでいない凹部９２に直接進入する。その結果、基板Ｗに対するエッチング効果の低下を抑制できる。 Therefore, according to the second embodiment, the rinsing liquid is removed from the concave portion 92 of the substrate W in step S24 before the etching process in step S25. Therefore, the etching liquid directly enters the recess 92 into which the rinsing liquid has not entered. As a result, a decrease in the etching effect on the substrate W can be suppressed.
　なお、工程Ｓ２３は、工程Ｓ２３１及び工程Ｓ２３２のうちのいずれか１つの工程を含んでいてもよい。例えば、工程Ｓ２３が工程Ｓ２３１だけを含んでいる場合は、工程Ｓ２４において、処理部ＳＰ２は、基板Ｗの凹部９２に入り込んでいる薬液を基板Ｗから除去する。具体的には、処理部ＳＰ２が、基板Ｗを乾燥して、基板Ｗの凹部９２に入り込んでいる薬液を除去する。 Step S23 may include any one of Step S231 and Step S232. For example, when the step S23 includes only the step S231, the processing unit SP2 removes the chemical solution that has entered the concave portion 92 of the substrate W from the substrate W in the step S24. Specifically, the processing unit SP2 dries the substrate W and removes the chemical solution that has entered the concave portion 92 of the substrate W.
　以上、図面を参照して本発明の実施形態について説明した。ただし、本発明は、上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲で種々の態様において実施できる。また、上記の実施形態に開示される複数の構成要素は適宜改変可能である。例えば、ある実施形態に示される全構成要素のうちのある構成要素を別の実施形態の構成要素に追加してもよく、または、ある実施形態に示される全構成要素のうちのいくつかの構成要素を実施形態から削除してもよい。 The embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above embodiment, and can be implemented in various modes without departing from the gist thereof. Further, a plurality of constituent elements disclosed in the above embodiment can be appropriately modified. For example, one component of all the components shown in one embodiment may be added to the components of another embodiment, or some configuration of all the components shown in one embodiment may be added. Elements may be omitted from embodiments.
　また、図面は、発明の理解を容易にするために、それぞれの構成要素を主体に模式的に示しており、図示された各構成要素の厚さ、長さ、個数、間隔等は、図面作成の都合上から実際とは異なる場合もある。また、上記の実施形態で示す各構成要素の構成は一例であって、特に限定されるものではなく、本発明の効果から実質的に逸脱しない範囲で種々の変更が可能であることは言うまでもない。 Also, the drawings schematically show each component as a main body in order to facilitate understanding of the invention, and the thickness, length, number, interval, etc. of each component shown in the drawings are not shown in the drawings. For some reasons, it may be different from the actual one. The configuration of each component shown in the above embodiment is an example, and is not particularly limited. Needless to say, various changes can be made without substantially departing from the effects of the present invention. .
　本発明は、基板処理方法及び基板処理装置に関するものであり、産業上の利用可能性を有する。 The present invention relates to a substrate processing method and a substrate processing apparatus, and has industrial applicability.
　１００、１００Ａ　　基板処理装置
　ＳＰ１、ＳＰ２　　処理部
　Ｗ　　基板 100, 100A substrate processing apparatus SP1, SP2 processing unit W substrate

Claims (10)

  1. 　凹部を含むパターンを有する基板を処理する基板処理方法であって、
    　前記基板を処理液で処理する処理工程と、
    　前記処理工程の後に、前記凹部に入り込んでいる前記処理液を前記基板から除去する除去工程と、
    　前記除去工程の後に、前記基板をエッチング液でエッチングするエッチング工程と
    　を含む、基板処理方法。     A substrate processing method for processing a substrate having a pattern including a concave portion,
    A processing step of processing the substrate with a processing liquid,
    After the processing step, a removing step of removing the processing solution that has entered the concave portion from the substrate,
    An etching step of etching the substrate with an etchant after the removing step.
  2. 　前記除去工程では、前記基板を乾燥して、前記凹部に入り込んでいる前記処理液を除去する、請求項１に記載の基板処理方法。 The substrate processing method according to claim 1, wherein in the removing step, the substrate is dried to remove the processing liquid that has entered the recess.
  3. 　前記処理工程は、
    　前記基板を薬液で処理する薬液工程と、
    　前記処理液としてのリンス液によって前記基板から前記薬液を洗い流すリンス工程と
    　を含む、請求項１又は請求項２に記載の基板処理方法。     The processing step includes:
    A chemical solution process of treating the substrate with a chemical solution,
    3. The substrate processing method according to claim 1, further comprising: rinsing the chemical liquid from the substrate with a rinsing liquid as the processing liquid.
  4. 　前記薬液工程では、前記基板に形成された自然酸化膜を前記薬液によって除去する、請求項３に記載の基板処理方法。 4. The substrate processing method according to claim 3, wherein in the chemical solution process, a natural oxide film formed on the substrate is removed by the chemical solution. 5.
  5. 　前記処理工程と前記除去工程と前記エッチング工程とは、複数の槽を備える基板処理装置の外部に前記基板を出すことなく、前記基板処理装置の内部で実行される一連の工程である、請求項１から請求項４のいずれか１項に記載の基板処理方法。 The said process process, the said removal process, and the said etching process are a series of processes performed inside the said substrate processing apparatus, without putting out the said substrate outside the substrate processing apparatus provided with a some tank. The substrate processing method according to any one of claims 1 to 4.
  6. 　前記除去工程では、前記複数の槽のうち前記基板が収容されている槽内に水溶性の有機溶剤の蒸気を供給して、前記槽内を減圧することによって前記基板を乾燥する、請求項５に記載の基板処理方法。 6. The method according to claim 5, wherein, in the removing step, a vapor of a water-soluble organic solvent is supplied to a tank containing the substrate among the plurality of tanks, and the substrate is dried by reducing the pressure in the tank. 4. The substrate processing method according to 1.
  7. 　前記処理工程と前記除去工程と前記エッチング工程とのうちの少なくとも２以上の工程が、同一槽内で実行される、請求項５又は請求項６に記載の基板処理方法。 7. The substrate processing method according to claim 5, wherein at least two or more of the processing step, the removing step, and the etching step are performed in the same tank.
  8. 　前記処理工程では、チャンバー内で前記基板を回転させながら、前記処理液を前記基板に供給して前記基板を処理し、
    　前記除去工程では、前記チャンバー内で前記基板を回転させながら、前記凹部に入り込んでいる前記処理液を除去し、
    　前記エッチング工程では、前記チャンバー内で前記基板を回転させながら、前記エッチング液を前記基板に供給して前記基板をエッチングする、請求項１から請求項４のいずれか１項に記載の基板処理方法。     In the processing step, the substrate is processed by supplying the processing liquid to the substrate while rotating the substrate in a chamber,
    In the removing step, while rotating the substrate in the chamber, remove the processing solution that has entered the concave portion,
    5. The substrate processing method according to claim 1, wherein, in the etching step, the substrate is etched by supplying the etchant to the substrate while rotating the substrate in the chamber. 6. .
  9. 　前記エッチング液は、テトラメチルアンモニウムハイドロオキサイドを含む、請求項１から請求項８のいずれか１項に記載の基板処理方法。 The substrate processing method according to any one of claims 1 to 8, wherein the etching solution contains tetramethylammonium hydroxide.
  10. 　凹部を含むパターンを有する基板を処理する基板処理装置であって、
    　前記基板を処理する処理部を備え、
    　前記処理部は、
    　前記基板を処理液で処理し、
    　前記基板を前記処理液で処理した後に、前記凹部に入り込んでいる前記処理液を前記基板から除去し、
    　前記処理液を前記基板から除去した後に、前記基板をエッチング液でエッチングする、基板処理装置。     A substrate processing apparatus for processing a substrate having a pattern including a concave portion,
    A processing unit for processing the substrate,
    The processing unit includes:
    Treating the substrate with a processing solution,
    After treating the substrate with the treatment liquid, remove the treatment liquid that has entered the recess from the substrate,
    A substrate processing apparatus, wherein after removing the processing liquid from the substrate, the substrate is etched with an etchant.
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