WO2020036167A1 - Procédé de liaison de monocristal de sic, procédé de production de lingot de sic et support destiné à être utilisé dans la croissance de monocristal de sic - Google Patents

Procédé de liaison de monocristal de sic, procédé de production de lingot de sic et support destiné à être utilisé dans la croissance de monocristal de sic Download PDF

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WO2020036167A1
WO2020036167A1 PCT/JP2019/031803 JP2019031803W WO2020036167A1 WO 2020036167 A1 WO2020036167 A1 WO 2020036167A1 JP 2019031803 W JP2019031803 W JP 2019031803W WO 2020036167 A1 WO2020036167 A1 WO 2020036167A1
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single crystal
sic single
atomic arrangement
curvature
sic
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PCT/JP2019/031803
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Japanese (ja)
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陽平 藤川
秀隆 鷹羽
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昭和電工株式会社
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Definitions

  • the present invention relates to a method for bonding a SiC single crystal, a method for manufacturing a SiC ingot, and a pedestal for growing a SiC single crystal.
  • Silicon carbide (SiC) has a breakdown electric field one order of magnitude higher than silicon (Si) and a band gap three times larger. Further, silicon carbide (SiC) has characteristics such as a thermal conductivity that is about three times higher than that of silicon (Si). Silicon carbide (SiC) is expected to be applied to power devices, high-frequency devices, high-temperature operation devices, and the like.
  • Si For devices such as semiconductors, a SiC epitaxial wafer having an epitaxial film formed on a SiC wafer is used.
  • An epitaxial film provided on a SiC wafer by a chemical vapor deposition method (Chemical Vapor Deposition: CVD) becomes an active region of the SiC semiconductor device.
  • the SiC epitaxial wafer means a wafer after forming an epitaxial film.
  • the SiC wafer means a wafer before an epitaxial film is formed.
  • Patent Literature 1 and Patent Literature 2 describe that the warp and undulation of the outer shape of a SiC single crystal used as a seed crystal cause cracks and defects.
  • Patent Document 1 describes that by setting the linear expansion coefficient of the SiC single crystal and the pedestal within a predetermined range, the warpage of the wafer is reduced.
  • Patent Literature 2 discloses that the stress applied to a SiC single crystal during growth can be reduced by making the coefficient of thermal expansion of a seed crystal holding portion smaller than that of other portions of the crucible.
  • BPD basal plane dislocation
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a method of bonding a SiC single crystal that can reduce the curvature of an atomic arrangement surface during crystal growth.
  • the present inventors have assiduously studied and found that there is a correlation between the amount of curvature of the atomic arrangement plane (lattice plane, crystal lattice plane) of the SiC single crystal and the basal plane dislocation (BPD) density.
  • BPD basal plane dislocation
  • the amount and direction of curvature of the atomic arrangement surface of the SiC single crystal may be orthogonal to the first direction passing at least through the center in plan view and the first direction.
  • a measurement step of measuring along a second direction a preparing step of preparing a pedestal having a curved surface curved in a direction opposite to an atomic arrangement surface of the SiC single crystal, and a bending direction of the atomic arrangement surface and the curvature. And attaching the SiC single crystal and the pedestal to each other so that the direction of curvature of the surface is different.
  • the difference between the absolute value of the amount of curvature of the atomic arrangement surface and the absolute value of the amount of curvature of the curved surface of the pedestal may be any one of the attachment surfaces. May be 10 ⁇ m or less.
  • the radius of curvature of the atomic arrangement plane may be 28 m or more.
  • the maximum value of the amount of curvature of the atomic arrangement plane may be 100 ⁇ m or less.
  • the thickness of the SiC single crystal when performing the bonding step may be 5 mm or less.
  • a difference in a coefficient of thermal expansion between the pedestal and the SiC single crystal at a crystal growth temperature may be 0.3 ⁇ 10 ⁇ 6 / ° C. or less.
  • the pedestal for growing a SiC single crystal according to the third aspect includes a curved surface that is curved in a direction opposite to a direction of curvature of an atomic arrangement surface of the SiC single crystal to be bonded.
  • the difference between the absolute value of the amount of curvature of the atomically arranged surface of the SiC single crystal to be attached and the absolute value of the amount of curvature of the curved surface is different from that of the attachment surface.
  • the thickness may be 10 ⁇ m or less at any point.
  • the atomic arrangement plane at the time of crystal growth can be flattened.
  • FIG. 3 is a schematic view of a cut surface obtained by cutting a SiC single crystal along a straight line extending in a first direction passing through the center in plan view. It is the figure which showed typically an example of the atomic arrangement surface of a SiC single crystal.
  • FIG. 4 is a diagram schematically showing another example of the atomic arrangement plane of the SiC single crystal.
  • FIG. 3 is a diagram for specifically explaining a method for measuring the shape of an atomic arrangement surface.
  • FIG. 3 is a diagram for specifically explaining a method for measuring the shape of an atomic arrangement surface.
  • FIG. 3 is a diagram for specifically explaining a method for measuring the shape of an atomic arrangement surface.
  • FIG. 3 is a diagram for specifically explaining a method for measuring the shape of an atomic arrangement surface.
  • FIG. 3 is a diagram for specifically explaining a method for measuring the shape of an atomic arrangement surface.
  • FIG. 9 is a diagram for specifically explaining another example of the method of measuring the shape of the atomic arrangement plane.
  • FIG. 9 is a diagram for specifically explaining another example of the method of measuring the shape of the atomic arrangement plane.
  • FIG. 10B is a supplementary diagram for deriving ⁇ / 2 in FIG. 10A. It is a figure for supplementing FIG. 10A. It is a figure which shows the relationship between a SiC single crystal and a pedestal. It is the figure which showed typically the state after sticking a SiC single crystal to a pedestal.
  • It is a schematic diagram of an example of the manufacturing apparatus used for the sublimation method. 4 is a graph showing a relationship between a radius of curvature of an atomic arrangement surface of a SiC single crystal and a BPD density.
  • SiC single crystal bonding method The method for bonding a SiC single crystal according to the present embodiment includes a measurement step, a preparation step, and a bonding step.
  • the measurement step the shape of the atomic arrangement plane of the SiC single crystal is measured along at least a first direction passing through the center in plan view and a second direction orthogonal to the first direction.
  • the preparation step a pedestal having a curved surface curved in a direction opposite to the atomic arrangement surface of the SiC single crystal is prepared.
  • the attaching step the SiC single crystal and the pedestal are attached to each other such that the curved direction of the atomic arrangement surface and the curved surface of the pedestal are different from each other.
  • each step will be specifically described.
  • the “center in plan view” means that the SiC single crystal to be evaluated has a circular shape in plan view, and a part thereof is missing. In the case of such a material (for example, a SiC wafer having an orientation flat), it means the center of the circle. However, it is not limited to this case.
  • a known method for example, a sublimation method
  • the “center in plan view” also means the center of the circle in this case.
  • a wafer or a cut body obtained by cutting a SiC single crystal ingot in a direction (excluding the vertical direction) intersecting the crystal growth direction has an elliptical shape in plan view. It means the intersection of the major axis and the minor axis of the ellipse.
  • FIG. 1 is a schematic diagram of a cut surface obtained by cutting a columnar SiC single crystal 1 that is circular in plan view along a straight line extending in a first direction passing through the center (center of the circle) in plan view. .
  • An arbitrary direction can be set as the first direction.
  • the first direction is [1-100].
  • the upper side is the direction in which the carbon plane (C plane, (000-1) plane) appears when cut perpendicularly to the [000-1] direction, that is, the ⁇ 0001> direction.
  • the first direction is set to [1-100] will be described.
  • the SiC single crystal 1 is a single crystal in which a plurality of atoms A are aligned. Therefore, as shown in FIG. 1, when the cut surface of the SiC single crystal is viewed microscopically, an atomic arrangement surface 2 in which a plurality of atoms A are arranged is formed.
  • the atom arrangement plane 2 in the cut plane can be drawn as a line extending in a direction substantially parallel to the cutting direction (first direction) obtained by connecting the atoms A arranged along the cut plane.
  • the shape of the atomic arrangement plane 2 may vary depending on the direction of the cut surface, regardless of the shape of the outermost surface of the SiC single crystal 1.
  • 2 and 3 are diagrams schematically showing the shape of the atomic arrangement plane 2.
  • FIG. The atomic arrangement surface 2 shown in FIG. 2 is concave toward the center. Therefore, in the atomic arrangement plane 2 shown in FIG. 2, the [1-100] direction and the [11-20] direction orthogonal to the [1-100] direction have the same bending direction.
  • the atom arrangement surface 2 shown in FIG. 3 has a potato chip type (saddle type) shape that is concave on a predetermined cut surface and convex on a cut surface different from the cut surface. Therefore, the bending direction of the atomic arrangement plane 2 shown in FIG. 3 differs between the [1-100] direction and the [11-20] direction orthogonal to the [1-100] direction.
  • the atomic arrangement plane of the SiC single crystal in order to accurately grasp the shape of the atomic arrangement plane 2, the atomic arrangement plane of the SiC single crystal must be formed along at least two directions (first direction and second direction) passing through the center in plan view and orthogonal to each other. 2 needs to be measured.
  • the crystal structure of the SiC single crystal 1 is hexagonal, and it is preferable to measure the shape of the atomic arrangement plane 2 along six directions symmetric with respect to the center. If the shape of the atomic arrangement surface 2 is measured along six directions symmetrical with respect to the center, the shape of the atomic arrangement surface 2 can be determined more precisely.
  • the shape of the atomic arrangement plane 2 can be measured by X-ray diffraction (XRD). In other words, the shape of the atomic arrangement plane 2 can be determined based on X-ray diffraction (XRD).
  • the surface to be measured is determined according to the measurement direction. Assuming that the measurement direction is [hkill], the measurement surface needs to satisfy the relationship of (mh mk mi n).
  • m is an integer of 0 or more
  • the measurement may be performed on either the C plane or the Si plane, but it is preferable to perform the measurement on the adhering surface (first surface) to be attached to the installation surface of the crucible.
  • the X-ray diffraction data is acquired at a total of five points, for example, a center and an end at two points along a predetermined direction, and a midpoint between the center and the end at two points.
  • the bending direction of the atomic arrangement surface 2 can be obtained from the position fluctuation of the diffraction peak.
  • the radius of curvature of the atomic arrangement surface 2 can be obtained from the position fluctuation of the diffraction peak, and the amount of curvature of the atomic arrangement surface 2 can also be obtained.
  • the shape of the atomic arrangement surface 2 can be obtained from the bending direction and the amount of curvature of the atomic arrangement surface 2.
  • two examples of the method of determining the amount of curvature of the atomic arrangement surface will be described.
  • FIG. 4 schematically shows a cross section cut along the direction of measurement of the atomic arrangement plane, for example, along the [1-100] direction, passing through the center in plan view. Assuming that the radius of the disc-shaped wafer 20 that is circular in plan view is r, the length of the cross section in the horizontal direction is 2r.
  • FIG. 4 also shows the shape of the atomic arrangement plane 22 on the wafer 20. As shown in FIG. 4, the shape of the wafer 20 itself is flat, but the atomic arrangement surface 22 may be curved. The atom arrangement surface 22 shown in FIG. 4 is bilaterally symmetric and concavely curved.
  • This symmetry is due to the fact that the manufacturing conditions of the SiC single crystal (ingot) are usually symmetric with respect to the central axis (the axis passing through the center of the circle in plan view and extending in the crystal growth direction).
  • the symmetry does not need to be perfect symmetry, but means symmetry as an approximation that allows blurring caused by fluctuations in manufacturing conditions and the like.
  • XRD is performed on the outer peripheral edge of the wafer 20, and the difference ⁇ between the measured X-ray diffraction peak angles between the two points is determined. As shown in FIG. 5, this ⁇ is the difference between the measured inclinations of the atomic arrangement plane 22 at two points (that is, the inclinations of the tangents). As described above, an appropriate plane is selected according to the cut plane as the diffraction plane used for the X-ray diffraction measurement.
  • FIG. 6 shows circles C that are in contact with two measured atomic arrangement planes, assuming that the curved surface of the atomic arrangement plane 22 of the wafer 20 is a part of a circle. It can be seen from FIG. 6 that the center angle ⁇ of the sector including the arc having the contact at both ends is equal to the difference ⁇ between the measured X-ray diffraction peak angles.
  • the radius of curvature of the atomic arrangement surface 22 corresponds to the radius R of the arc.
  • the radius R of the arc is obtained by the following relational expression.
  • the amount of curvature d of the atomic arrangement surface 22 is obtained.
  • the amount of curvature d of the atomic arrangement surface 22 corresponds to a value obtained by subtracting a perpendicular distance from the center of the arc to the surface of the wafer 20 from the radius of the arc.
  • the distance of the perpendicular from the center of the arc to the surface of the wafer 20 is calculated from the three-square theorem, and the following equation holds.
  • the curvature d when the radius of curvature is positive (concave surface) is defined as a positive value
  • the curvature d when the radius of curvature is negative (convex) is defined as a negative value.
  • R can be measured only from the measured value of the outer peripheral edge of the XRD wafer 20.
  • the X-ray diffraction peak angle may be measured at a plurality of locations, and the curvature per unit length may be converted from the following equation.
  • FIG. 8 shows an example in which the radius of curvature of the atomic arrangement surface is obtained from a plurality of XRD measurement points.
  • the horizontal axis in FIG. 8 is the relative position from the wafer center, and the vertical axis is the relative diffraction peak angle of each measurement point with respect to the wafer center diffraction peak angle.
  • FIG. 9 schematically shows a cross section cut along the direction of measurement of the atomic arrangement plane, for example, along the [1-100] direction passing through the center in plan view.
  • FIG. 9 illustrates an example in which the shape of the atomic arrangement surface 22 is concavely curved.
  • diffraction peaks of X-ray diffraction are measured at two points (two points indicated by a mark “ ⁇ ” in FIG. 9) at the center of the wafer 20 and at a distance x from the center of the wafer 20. .
  • the shape of the wafer 20 is bilaterally symmetric as an approximation, and that the atomic arrangement surface 22 is flat at the center of the wafer 20. Therefore, assuming that the difference between the inclinations of the atomic arrangement surface 22 at two points measured as shown in FIG. 10A is ⁇ , the relative position y of the atomic arrangement surface 22 can be expressed by the following equation.
  • FIG. 10B shows a supplementary diagram for deriving ⁇ / 2 in FIG. 10A.
  • Points P, Q, S, T, U, V, and V in FIGS. 10A and 10B indicate the same position.
  • a circle C is a circle that is in contact with the atomic arrangement surface, assuming that the curved surface of the atomic arrangement surface 22 is a part of the circle, as in FIG.
  • Point O indicates the center of circle C.
  • Tangent of the straight line L P is the point P
  • the tangent of the straight line L T is the point T
  • linear L T ' is the point V, which is a straight line parallel to the straight line L T.
  • Point H indicates the midpoint of line segment PT.
  • the atomic arrangement plane at the wafer center and the measurement point at each point 22 relative atomic positions can be determined.
  • the relative positions of the atoms on the atomic arrangement plane are obtained at each measurement point. Therefore, the amount of curvature (y 0 , y 1 , y 2 ) of the local atomic arrangement plane can be obtained.
  • the relative atomic positions of the atomic arrangement surface 22 in the entire wafer 20 can be shown as a graph, which is useful for intuitively grasping the arrangement of the atomic arrangement surfaces 22, 22a, and 22b.
  • the case where the measurement target is the wafer 20 has been described as an example.
  • the measurement target is a SiC ingot or a cut body cut from the SiC ingot
  • the amount of curvature of the atomic arrangement surface can be similarly obtained.
  • the amount of curvature of the atomic arrangement plane 2 of the SiC single crystal is measured in at least two directions (first direction and second direction) passing through the center in plan view and orthogonal to each other.
  • the approximate shape of the atomic arrangement plane 2 as shown in FIGS. 2 and 3 can be obtained by obtaining the amount of bending and the bending direction in each direction.
  • FIG. 11 is a diagram showing a relationship between the SiC single crystal 1 and the pedestal 3.
  • the pedestal 3 has a curved surface 3A that is curved in a direction opposite to the direction of curvature of the atomic arrangement surface 2 of the SiC single crystal 1.
  • the difference between the absolute value of the amount of curvature of the atomic arrangement surface 2 and the absolute value of the amount of curvature of the curved surface 3A of the pedestal 3 is preferably 10 ⁇ m or less at any point on the attachment surface. Is most preferred. If the absolute value difference of the amount of curvature between the pedestal 3 and the atomic arrangement surface 2 is small, the atomic arrangement surface 2 after pasting can be made flatter.
  • the pedestal 3 When the difference between the absolute value of the amount of curvature of the atomic arrangement surface 2 and the absolute value of the amount of curvature of the curved surface 3A of the pedestal 3 is not 0, the pedestal 3 is not subjected to excessive stress due to deformation to the SiC single crystal. Is preferably smaller than the absolute value of the amount of curvature of the atomic arrangement surface 2. The risk of breaking the SiC single crystal by excessively distorting the SiC single crystal can be reduced.
  • the curved surface 3A of the pedestal 3 may be processed after measuring the shape of the atomic arrangement surface 2 of the SiC single crystal 1, or a plurality of pedestals 3 having different bending directions and bending amounts are prepared in advance. Alternatively, one of them may be selected that can flatten the atomic arrangement surface 2 after being attached.
  • the thermal expansion coefficient of pedestal 3 is preferably close to the thermal expansion coefficient of SiC single crystal 1.
  • the difference in thermal expansion coefficient is preferably 0.3 ⁇ 10 ⁇ 6 / ° C. or less.
  • the coefficient of thermal expansion shown here means a coefficient of thermal expansion in a temperature region where a crystal is grown using the SiC single crystal 1 as a seed crystal, and means a temperature near 2000 ° C.
  • the thermal expansion coefficient of the graphite, the processing conditions, the inclusion material and the like can be selected in the range of 4.3 ⁇ 10 -6 /°C ⁇ 7.1 ⁇ 10 -6 / °C . Since the difference in the coefficient of thermal expansion between the pedestal 3 and the SiC single crystal 1 is small, it is possible to prevent the SiC single crystal 1 from warping due to the difference in the coefficient of thermal expansion during crystal growth and the atomic arrangement plane 2 from being curved.
  • FIG. 12 is a diagram schematically illustrating a state after the SiC single crystal 1 is attached to the pedestal 3.
  • the thickness of the SiC single crystal 1 when performing the attaching step is preferably 5 mm or less. If the thickness of the SiC single crystal 10 is large, bending is less likely to occur during sticking. For this reason, it is difficult to attach the substrate to the pedestal in close contact, and it becomes difficult to arrange the atomic arrangement plane (lattice plane) of the SiC single crystal after the attaching step flat.
  • the load for pressing the SiC single crystal 1 against the curved surface 3A of the pedestal 3 is preferably changed according to the relative distance of the atomic arrangement surface 2 to the curved surface 3A of the pedestal 3.
  • the SiC single crystal 1 It is preferable to make the load on the outer peripheral side stronger than that on the inner side.
  • the inside of the SiC single crystal 1 It is preferable that the load on the outer peripheral side be higher than that on the outer peripheral side.
  • the sticking step is performed using, for example, an adhesive.
  • an adhesive a thermosetting resin or the like can be used.
  • a pressure reducing step of reducing the pressure around the SiC single crystal 1 may be further performed. Even when air bubbles or the like are caught in the bonding surface, degassing can be performed by setting the environment to a reduced pressure. As a result, thickness unevenness of the adhesive at the time of application can be further suppressed.
  • the radius of curvature of the atomic arrangement surface 2 of the SiC single crystal 1 leading to the attaching step is preferably at least 28 m.
  • the maximum value of the amount of curvature of the atomic arrangement surface is 100 ⁇ m or less. If the amount of curvature of the atomic arrangement surface 2 is large, it is necessary to greatly deform the SiC single crystal 1 in the direction opposite to the curving direction of the atomic arrangement surface 2 in order to flatten the atomic arrangement surface 2.
  • the amount of strain of the SiC single crystal 1 within a predetermined range, it is possible to suppress the occurrence of cracks in the SiC single crystal 1 and the accumulation of stress in the SiC single crystal 1.
  • the curvature of the atomic arrangement plane 2 can be reduced.
  • Method of manufacturing SiC ingot In the method for manufacturing a SiC ingot according to the present embodiment, in the above-described method for bonding a SiC single crystal, crystal growth is performed using the SiC single crystal 1 bonded to the base 3 as a seed crystal.
  • the SiC ingot can be manufactured using, for example, a sublimation method.
  • the sublimation method is a method in which a raw material gas generated by heating a raw material is recrystallized on a single crystal (seed crystal) to obtain a large single crystal (ingot).
  • FIG. 13 is a schematic view of an example of a manufacturing apparatus used for the sublimation method.
  • the manufacturing apparatus 200 has a crucible 100 and a coil 101. Between the crucible 100 and the coil 101, a heating element (not shown) that generates heat by induction heating of the coil 101 may be provided.
  • the crucible 100 has a pedestal 3 provided at a position facing the raw material G. SiC single crystal 1 is attached to pedestal 3 according to the above-described attaching method. Further, inside the crucible 100, there is provided a taper guide 102 whose diameter increases from the pedestal 3 toward the raw material G.
  • the crystal growth surface of SiC single crystal 1 is preferably a carbon surface or a surface having an off angle of 10 ° or less from the carbon surface.
  • SiC ingot I takes over much of the crystal information of SiC single crystal 1. Since the atomic arrangement surface 2 of the SiC single crystal 10 is flattened, generation of BPD in the SiC ingot I can be suppressed.
  • FIG. 14 is a graph showing the relationship between the radius of curvature of the atomic arrangement plane of the SiC single crystal and the BPD density.
  • the BPD density tends to decrease as the radius of curvature of the atomic arrangement surface 2 increases (the amount of curvature of the atomic arrangement surface 2 decreases).
  • the crystal in which the stress remains inside induces a slip of the crystal plane, and causes the atomic arrangement plane 2 to be curved with the occurrence of BPD.
  • the atomic arrangement surface 2 having a large amount of curvature has a strain and causes BPD. In either case, the BPD density decreases as the radius of curvature of the atomic arrangement surface increases (ie, the amount of curvature of the atomic arrangement surface decreases).
  • the cutting direction is perpendicular to ⁇ 0001> or cut in the direction with an off angle of 0 to 10 °, and a wafer with a surface parallel to the C plane or with a 0 to 10 ° off angle from the C plane is manufactured. I do.
  • mirror processing may be performed on the (0001) plane side, that is, the Si plane side.
  • the Si surface is a surface on which epitaxial growth is usually performed. Since the SiC ingot I has a small BPD, an SiC wafer having a small BPD can be obtained. By using an SiC wafer with a small number of BPDs as killer defects, a high-quality SiC epitaxial wafer can be obtained, and the yield of SiC devices can be increased.
  • the rotation speed is preferably set to 0.1 rpm or more. Further, it is preferable to reduce the temperature change on the growth surface during growth.

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  • Crystallography & Structural Chemistry (AREA)
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Abstract

La présente invention concerne un procédé de liaison d'un monocristal de SiC qui comprend : une étape de mesure consistant à mesurer la quantité et la direction de courbure d'une face d'agencement atomique d'un monocristal de SiC le long d'au moins une première direction qui passe à travers le centre dans une vue en plan de la face d'agencement atomique et une seconde direction qui est orthogonale à la première direction ; une étape de fourniture consistant à fournir un support qui a une surface incurvée qui s'incurve dans la direction opposée à la face d'agencement atomique du monocristal de SiC ; et une étape de liaison consistant à lier le monocristal de SiC à la monture de telle sorte que le monocristal de SiC et le support se font face l'un à l'autre de telle sorte que la direction de courbure de la face d'agencement atomique et la direction de courbure de la surface incurvée peuvent être différentes l'une de l'autre.
PCT/JP2019/031803 2018-08-13 2019-08-13 Procédé de liaison de monocristal de sic, procédé de production de lingot de sic et support destiné à être utilisé dans la croissance de monocristal de sic WO2020036167A1 (fr)

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EP4060098A1 (fr) * 2021-03-19 2022-09-21 SiCrystal GmbH Procédé de fabrication pour un monocristal volumique de sic à distribution non homogène de dislocation en vis et substrat sic

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