WO2020029465A1 - Substrat d'électrode souple transparent et procédé de fabrication pour celui-ci - Google Patents

Substrat d'électrode souple transparent et procédé de fabrication pour celui-ci Download PDF

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Publication number
WO2020029465A1
WO2020029465A1 PCT/CN2018/116135 CN2018116135W WO2020029465A1 WO 2020029465 A1 WO2020029465 A1 WO 2020029465A1 CN 2018116135 W CN2018116135 W CN 2018116135W WO 2020029465 A1 WO2020029465 A1 WO 2020029465A1
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WO
WIPO (PCT)
Prior art keywords
flexible transparent
polymer
transparent electrode
substrate
manufacturing
Prior art date
Application number
PCT/CN2018/116135
Other languages
English (en)
Chinese (zh)
Inventor
张霞
孙作榜
刘刚
陈孝贤
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Publication of WO2020029465A1 publication Critical patent/WO2020029465A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Abstract

L'invention concerne un substrat d'électrode souple transparent et un procédé de fabrication pour celui-ci, lequel procédé pour fabriquer le substrat d'électrode souple transparent comprend : la disposition d'un substrat avant (11) ; la formation d'un support souple transparent (13) sur le substrat avant (11), le matériau de préparation du support souple transparent (13) étant un polymère comprenant un groupe carboxyle ; et le traitement successif du support souple transparent (13) avec une solution alcaline forte, une solution de nitrate d'argent, et une solution de chlorure, le fait de soumettre celui-ci à un traitement d'éclairage, puis la formation d'un substrat d'électrode souple transparent.
PCT/CN2018/116135 2018-08-10 2018-11-19 Substrat d'électrode souple transparent et procédé de fabrication pour celui-ci WO2020029465A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810911707.6 2018-08-10
CN201810911707.6A CN109148286B (zh) 2018-08-10 2018-08-10 一种柔性透明电极基板及其制作方法

Publications (1)

Publication Number Publication Date
WO2020029465A1 true WO2020029465A1 (fr) 2020-02-13

Family

ID=64792911

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/116135 WO2020029465A1 (fr) 2018-08-10 2018-11-19 Substrat d'électrode souple transparent et procédé de fabrication pour celui-ci

Country Status (2)

Country Link
CN (1) CN109148286B (fr)
WO (1) WO2020029465A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110911051A (zh) * 2019-11-13 2020-03-24 Tcl华星光电技术有限公司 一种柔性导电线制程方法、柔性导电线及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101020242A (zh) * 2006-02-15 2007-08-22 三星电机株式会社 生产金属纳米颗粒的方法
US20090104437A1 (en) * 2007-10-17 2009-04-23 Michael Jeremiah Bortner Scalable silver nano-particle colloid
CN102203318A (zh) * 2008-09-02 2011-09-28 特拉维夫大学拉玛特有限公司 金属纳米线薄膜
CN106654057A (zh) * 2016-11-16 2017-05-10 福建师范大学 一种聚合物电致发光器件及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554405B (en) * 2000-12-22 2003-09-21 Seiko Epson Corp Pattern generation method and apparatus
KR100672933B1 (ko) * 2003-06-04 2007-01-23 삼성전자주식회사 세정 용액 및 이를 이용한 반도체 소자의 세정 방법
CN101750444B (zh) * 2008-11-28 2013-04-17 中国科学院烟台海岸带研究所 一种聚合物膜银离子选择性电极的制备方法
JP2012188516A (ja) * 2011-03-10 2012-10-04 Unitika Ltd 脱酸素塗剤、脱酸素剤含有塗膜及び積層体
CN102921958B (zh) * 2012-11-06 2014-10-15 上海交通大学 一种具有pH调节相转移行为的发光纳米银的制备方法
CN106847378A (zh) * 2017-03-31 2017-06-13 东莞市纳利光学材料有限公司 一种柔性透明导电膜及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101020242A (zh) * 2006-02-15 2007-08-22 三星电机株式会社 生产金属纳米颗粒的方法
US20090104437A1 (en) * 2007-10-17 2009-04-23 Michael Jeremiah Bortner Scalable silver nano-particle colloid
CN102203318A (zh) * 2008-09-02 2011-09-28 特拉维夫大学拉玛特有限公司 金属纳米线薄膜
CN106654057A (zh) * 2016-11-16 2017-05-10 福建师范大学 一种聚合物电致发光器件及其制备方法

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Publication number Publication date
CN109148286B (zh) 2021-02-02
CN109148286A (zh) 2019-01-04

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