WO2020025055A1 - 一种led光源、面光源显示模组和led光源的制备方法 - Google Patents

一种led光源、面光源显示模组和led光源的制备方法 Download PDF

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WO2020025055A1
WO2020025055A1 PCT/CN2019/099069 CN2019099069W WO2020025055A1 WO 2020025055 A1 WO2020025055 A1 WO 2020025055A1 CN 2019099069 W CN2019099069 W CN 2019099069W WO 2020025055 A1 WO2020025055 A1 WO 2020025055A1
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layer
light source
substrate
led
transparent
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PCT/CN2019/099069
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English (en)
French (fr)
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孙智江
王书昶
陈帅
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海迪科（南通）光电科技有限公司
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Publication of WO2020025055A1 publication Critical patent/WO2020025055A1/zh
Priority to US17/166,159 priority Critical patent/US11605764B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/68—Details of reflectors forming part of the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Definitions

  • the present application relates to the field of light source technology, and in particular, to a method for preparing an LED light source, a surface light source display module, and an LED light source.
  • the traditional direct type surface light source display module mainly includes the following three types: (1) a diffuser plate is arranged at a certain distance above the LED light source array, and the diffuser plate is used to change the point light source into a surface light source; (2) the The LED light source is closely installed with the lens, so that the light emitted by the LED light source is transmitted through the lens and the air layer to the diffuser plate, and then the point light source is turned into a surface light source; (3) the surface of the LED light source array is directly coated with silicone The phosphor is added to form a light guide medium layer, and the point light source is changed into a surface light source.
  • the maximum light output angle of the LED light source is about 120 °.
  • the (1), (2) type of surface light source is used, it is easy to form a dark area, and there is uniform light mixing.
  • the problem of poor performance is that the entire area light source display module is still thick. To reduce the thickness of the entire area light source display module, it can only be achieved by reducing the distance between adjacent LED light sources, but this will make the number of LED light sources into With the increase of the square, the cost has increased significantly.
  • the thickness of the surface light source display module can be reduced, the light emitted by the LED light source is not conducive to lateral propagation and horizontal propagation in the phosphor layer due to the limitation of the angle of light emitted by the LED light source. The effect is limited.
  • the technical problem mainly solved by this application is to provide an LED light source, a surface light source display module, and a method for preparing an LED light source, which can increase the light emitting angle of the LED light source.
  • the LED light source includes: an LED chip, including a lower reflection layer, a P-GaN layer, a light emitting layer, An N-GaN layer and a substrate; a blue light complex excitation layer disposed on a side of the LED chip and a side of the substrate away from the light emitting layer; four sides of the blue light complex excitation layer are full light emitting areas;
  • the reflection layer is disposed on the top surface of the blue light complex excitation layer, and the top surface of the upper reflection layer is a total reflection or a partial reflection area.
  • the surface light source module includes: a substrate; a plurality of LED light sources according to any one of the above embodiments; The LED light sources are arranged on one side of the substrate at intervals; a transparent waveguide layer is provided on one side of the substrate and covers all the LED light sources, and the height of the transparent waveguide layer is greater than or equal to the top surface height of the LED light sources.
  • Step S1 selecting qualified LED chips, the LED chips include bottom to top in order The provided lower reflection layer, P-GaN layer, light-emitting layer, N-GaN layer and substrate; step S2: arranging a plurality of said LED chips at an equal distance so that a fillable gap is formed between adjacent LED chips Then, a blue light complex excitation layer is provided on the entire surface of the LED chip and the fillable gap as a whole, and then baked and cured to obtain a semi-finished product; step S3: forming an upper reflective layer on the top surface of the semi-finished product; step S4: having the top surface with the The semi-finished product of the upper reflection layer is baked and cured again, and then cut, split, and chip tested, sorted, and rearranged after the split to obtain an LED light source.
  • the beneficial effect of the present application is that the bottom surface of the LED chip in the LED light source provided by the present application is provided with a lower reflection layer, the blue light complex excitation layer is located on the side and the top surface of the LED chip, and the upper reflection layer is provided on the top surface of the blue light complex excitation layer.
  • the upper and lower sides of the LED light source are provided with reflective layers, part of the light can be reflected to the side of the LED chip through the upper and lower reflective layers, thereby increasing the angle of light output from the LED light source; Due to the short wavelength of blue light, blue light is more severely absorbed in the LED light source; and the LED light source provided in this application includes a blue light complex excitation layer.
  • the LED light sources provided in this application are independent individuals and can be conveniently mounted on various substrates.
  • FIG. 1 is a schematic structural diagram of an embodiment of a conventional front-mounted LED chip with a mirror structure.
  • FIG. 2 is a schematic structural diagram of an embodiment of a conventional flip-chip LED chip with a mirror structure.
  • FIG. 3 is a test chart of a light emitting angle of a conventional LED light source.
  • FIG. 4 is a schematic diagram of the light intensity superimposition of the first method in the conventional direct type surface emitting module.
  • FIG. 5 is a test chart of the light output angle of a conventional LED light source plus a lens.
  • FIG. 6 is a principle diagram of light intensity superimposition using an LED light source and a lens method in a conventional direct type surface emitting module.
  • FIG. 7 is another schematic diagram of light intensity superimposition in a conventional direct-type surface light emitting module using a closely arranged LED light source and lens method.
  • FIG. 8 is a schematic diagram of an LED light source array and a phosphor method in a conventional direct type surface light emitting module.
  • FIG. 9 is a schematic diagram showing the loss of light intensity of a point light source with a phosphor waveguide.
  • FIG. 10 is a schematic diagram of the light intensity loss of a linear light source with a phosphor waveguide.
  • FIG. 11 is a schematic diagram of the light intensity loss of a surface light source with a phosphor-containing waveguide.
  • FIG. 12 is a fluorescence emission spectrum chart excited by a blue LED.
  • FIG. 13 is a schematic structural diagram of an embodiment of an LED light source according to the present application.
  • FIG. 14 is a light emission angle test chart of the LED light source in FIG. 13.
  • FIG. 15 is a schematic structural diagram of another embodiment of an LED light source of the present application.
  • FIG. 16 is a schematic structural diagram of another embodiment of an LED light source of the present application.
  • FIG. 17 is a schematic structural diagram of an embodiment of a surface light source module of the present application.
  • FIG. 18 is a schematic structural diagram of another embodiment of a surface light source module of the present application.
  • FIG. 19 is a schematic structural diagram of another embodiment of a surface light source module of the present application.
  • FIG. 20 is a partially enlarged schematic diagram of an embodiment in FIG. 18.
  • FIG. 21 is a schematic structural diagram of another embodiment of a surface light source module according to the present application.
  • FIG. 22 is a schematic structural diagram of another embodiment of a surface light source module according to the present application.
  • FIG. 1 is a schematic structural diagram of an embodiment of a conventional front-mounted LED chip with a mirror structure
  • FIG. 2 is a structural schematic diagram of an embodiment of a conventional flip-chip LED chip with a mirror structure.
  • the conventional front-mounted LED chip with a mirror structure includes a reflective layer 11, a substrate 12, an N-GaN layer 13, and a P-GaN layer 14 which are arranged in this order from bottom to top.
  • the conventional flip-chip LED chip with a mirror structure includes a reflective layer 21, a P-GaN layer 22, a light-emitting layer 23, an N-GaN layer 24, and a substrate 25, which are sequentially arranged from bottom to top.
  • the reflection layers of the conventional front-mounted LED chip and the flip-chip LED chip with a mirror structure are both disposed on the bottom surface of the LED chip, and the LED chip emits light on 5 sides.
  • the light emitting angle of the LED light source formed after the LED chip with the mirror structure is packaged is only about 120 °.
  • the use is subject to certain restrictions.
  • a diffusion plate is arranged at a certain distance above the LED light source array, and the point light source is changed into a surface light source by using the diffusion plate;
  • the lens is closely mounted on the LED light source, so that the light emitted by the LED light source is transmitted to the diffuser through the lens and the air layer, and then the point light source is turned into a surface light source;
  • the surface of the LED light source array is directly coated with silica gel and phosphor to form a light guide medium layer, and then the point light source is changed into a surface light source.
  • the maximum light output angle of the conventional LED light source is about 120 °, and a large distance must be spaced between the LED light source 91 and the diffuser plate 92 to achieve a more uniform mixing.
  • the whole surface light emitting module is usually very thick, and can only be applied to the lighting industry, such as panel lights, and the application is very limited.
  • the light output angle of the conventional LED light source 91 after superimposing the lens 3 can reach 135 °. Although it increases the light emission angle, and the light output on the top surface is greatly reduced, it can be relatively more To achieve a more uniform light mixing effect in a short distance, since the secondary optical lens is required, the diffusion plate 92 and the secondary optical lens 93 must also be spaced a certain distance, although the thickness is reduced compared to the first method , But the surface light emitting module cannot achieve the ultra-thin effect.
  • a phosphor layer 94 is coated on the surface of a light source array composed of a plurality of LED chips 91 ′, which slightly increases the lateral propagation and mixing of white light; however, according to optical theory, when When blue light is transmitted in a waveguide containing a phosphor, the intensity of the blue light, which is excitation light, decreases rapidly due to the absorption and irregular scattering of the phosphor.
  • the intensity when the light intensity is transmitted in a waveguide containing phosphors, the intensity is numerically inversely proportional to the cube of the distance; as shown in Figure 10, the light intensity When transmitting in the waveguide of the phosphor, the intensity is inversely proportional to the square of the distance in value; as shown in FIG. 11, the intensity of the surface light source is inversely proportional to the distance when the light intensity is transmitted in the waveguide containing the phosphor.
  • the maximum light output angle of the LED light source is about 120 °
  • the maximum light output angle of the LED light source is about 120 °
  • the problem of poor light uniformity is that the entire area light source display module is still thick. To reduce the thickness of the entire area light source display module, it can only be achieved by reducing the distance between adjacent LED light sources, but this will make the LED light source
  • the increase in the squared quantity increases the cost significantly.
  • the thickness of the surface light source display module can be reduced, the light emitted by the LED light source is not conducive to lateral propagation and horizontal propagation in the phosphor layer due to the limitation of the angle of the LED light source. The effect is limited.
  • the white light obtained by mixing the blue light-excited phosphor is severely attenuated during the propagation of the light guide medium, the blue light intensity is reduced, and the transverse propagation intensity along the waveguide direction is reduced; the chip's uneven brightness and poor light mixing effect cause the surface light source to be uniform
  • the surface brightness is also not uniform. Therefore, the chip arrangement is relatively dense, which limits the arrangement of LED chips with a larger pitch as a whole.
  • FIG. 13 is a schematic structural diagram of an embodiment of an LED light source of the present application.
  • the LED light source includes:
  • the LED chip 1 adopts a flip-chip structure with a mirror.
  • the LED chip 1 includes a lower reflection layer, a P-GaN layer, a light-emitting layer, an N-GaN layer, and a substrate, which are arranged in order from bottom to top.
  • the blue light complex excitation layer 2 is disposed on the side surface and the top surface of the LED chip 1, and the four sides of the blue light complex excitation layer 2 are full light emitting areas.
  • the blue light complex excitation layer 2 may be a phosphor layer.
  • the upper reflection layer 3 is disposed on the top surface of the blue light complex excitation layer 2, and the top surface of the upper reflection layer 3 is a total reflection or partial reflection area.
  • the upper The reflective layer 3 contains granular fillers for refraction and reflection. By controlling the thickness of the translucent reflective layer, it helps to increase the amount of light emitted from the edges and sides of the LED chip 1.
  • the structure successfully changed the main energy angle of the main light emitting direction of the LED light source of the normal Lambertian light structure from directly above 0 ° Transformed into plus or minus 30 ° around. Secondly, it can be seen from the light intensity distribution that its luminous light intensity is uniformly distributed throughout the entire luminous angle. Even under a large angle range of plus or minus 85 °, its outgoing light intensity is still about 64% of the peak light intensity.
  • the transmissive and semi-reflective top surface reflective LED light source has a light intensity of 64% of the peak value of the light intensity even in a large angle range of plus or minus 85 °.
  • the bottom surface of the LED chip 1 is provided with a lower reflection layer
  • the blue light complex excitation layer 2 is located on the side and the top surface of the LED chip 1
  • the upper reflection layer 3 is provided on the top surface of the blue light complex excitation layer 2.
  • the upper and lower sides of the LED light source are provided with a reflective layer, a part of the light can be reflected to the side of the LED chip 1 through the upper reflective layer 3 and the lower reflective layer, thereby increasing the light emitting angle of the LED light source;
  • the long-wavelength light such as green light, yellow light, and red light has a lower absorption rate in the LED chip, and the blue light emitted by the LED chip itself has a longer wavelength.
  • the LED light source provided in this application includes a blue light complex excitation layer 2, when the light emitted by the LED chip 1 is continuously reflected between the upper reflective layer 3 and the lower reflective layer, due to The existence of the blue light re-excitation layer 2 can reflect the reflected blue light, and then pass through the blue light re-excitation layer 2 to further excite, and then further mix to obtain white light, thereby reducing blue light absorption while achieving large-angle light emission.
  • the LED light sources provided in this application are independent individuals and can be conveniently mounted on various substrates.
  • FIG. 15 is a schematic structural diagram of another embodiment of the LED light source of the present application.
  • This LED light source is different from that in FIG. 13 in that the first dielectric transparent layer 4 is disposed on the top surface and side surfaces of the blue light complex excitation layer 2, and the upper reflective layer 3 is located on the top surface of the first dielectric transparent layer 4.
  • the LED light source provided in the present application may further include a second dielectric transparent layer located between the first dielectric transparent layer 4 and the upper reflective layer 3, and the refractive index of the first dielectric transparent layer 4 is higher than Refractive index in the second dielectric transparent layer.
  • the arrangement of the first dielectric transparent layer 4 or the second dielectric transparent layer increases the light emitting angle of the LED chip 1, is beneficial to the transparent waveguide layer that guides light, increases the light emitting angle, and further improves the light mixing effect.
  • FIG. 16 is a schematic structural diagram of another embodiment of the LED chip in FIG. 13 or FIG. 15.
  • the top surface of the LED chip 1 is provided with a medium reflection layer 8.
  • the medium reflection layer 8 is located between the substrate of the LED chip 1 and the blue light complex excitation layer 2, and the medium reflection layer 8 is a partially light emitting and partially reflecting structure.
  • the LED light source provided in the present application will be further described from the perspective of a preparation method.
  • the LED light source can be prepared by the following steps:
  • Step S1 Select a qualified LED chip 1.
  • the LED chip 1 has a bottom reflective layer, a P-GaN layer, a light-emitting layer, an N-GaN layer, and a substrate in order from bottom to top.
  • Step S2 arranging a plurality of LED chips 1 at an equal distance so that a fillable gap is formed between adjacent LED chips 1, and then a phosphor layer is disposed on the entire surface of the LED chip 1 and within the fillable gap, thereby forming a blue light complex excitation layer 2, and baking and curing to obtain semi-finished products;
  • Step S3 forming a specular upper reflective layer 3 with a clear interface on the top surface of the semi-finished product obtained in step S2; specifically, the upper reflective layer 3 is a metal layer on the top surface of the blue light complex excitation layer 2 or a blue light complex excitation layer 2
  • the top surface is provided with granular fillers for refraction and reflection;
  • Step S4 baking and curing the semi-finished product with the upper reflective layer on the top surface, and then cutting, splitting, and chip testing, sorting, and rearrangement after the splitting to obtain the LED light source.
  • the above step S1 is further adjusted as follows: the LED wafer is selected, and the LED wafer has a bottom reflection layer, a P-GaN layer, and light emission in order from bottom to top. Layer, N-GaN layer and substrate to test whether the LED wafer is qualified; and a medium reflection layer 8 is provided on the top surface of the wafer that has passed the inspection.
  • the LED wafer is baked and cured, and then cut and split to obtain an LED chip provided with a lower reflection layer, a P-GaN layer, a light-emitting layer, an N-GaN layer, a substrate, and a middle reflection layer 8 in order from bottom to top. Select a qualified LED chip 1 with a middle reflection layer 8; the remaining steps remain unchanged. In this way, the upper surface and the lower surface of the LED chip 1 respectively have a middle reflection layer and a lower reflection layer.
  • the LED light source can be prepared by the following steps:
  • Step S1 Select a qualified LED chip 1.
  • the LED chip 1 has a bottom reflective layer, a P-GaN layer, a light-emitting layer, an N-GaN layer, and a substrate in order from bottom to top.
  • Step S2 arranging a plurality of LED chips 1 at an equal distance so that a fillable gap is formed between adjacent LED chips 1, and then a phosphor layer is disposed on the entire surface of the LED chip 1 and within the fillable gap, thereby forming a blue light complex excitation layer 2, and baking and curing to obtain a semi-finished product; then cutting and splitting the semi-finished product to obtain a semi-finished product with a blue light complex excitation layer 2; A gap can be filled, and then a first dielectric transparent layer 4 is disposed on the entire surface of the semi-finished product and within the fillable gap as a whole, and then baked and cured to obtain a semi-finished product having the blue light complex excitation layer 2 and the first dielectric transparent layer 4;
  • Step S3 forming a specular upper reflective layer 3 with a clear interface on the top surface of the semi-finished product obtained in step S2; specifically, the upper reflective layer 3 is a metal layer on the top surface of the blue light complex excitation layer 2 or a blue light complex excitation layer 2
  • the top surface is provided with granular fillers for refraction and reflection;
  • Step S4 baking and curing the semi-finished product with the upper reflective layer on the top surface, and then cutting, splitting, and chip testing, sorting, and rearranging after the splitting to obtain the LED light source.
  • step S1 is adjusted as follows: selecting an LED wafer, the LED wafer has a bottom reflection layer, a P-GaN layer, and a light-emitting layer in this order.
  • N-GaN layer and substrate to test whether the LED wafer is qualified; and a medium reflection layer 8 is provided on the top surface of the wafer that has passed the inspection, and the LED with a middle reflection layer on the top surface
  • the wafer is baked and cured, and then dicing and splitting are performed to obtain an LED chip provided with a bottom reflection layer, a P-GaN layer, a light emitting layer, an N-GaN layer, a substrate, and a middle reflection layer 8 in order from bottom to top.
  • the above step S3 is further optimized to form a second dielectric transparent layer and a mirror surface with a clear interface on the top surface of the semi-finished product with the first dielectric transparent layer 4 and the blue light complex excitation layer 2 in order.
  • an additional layer of a second dielectric transparent layer can be formed between the first dielectric transparent layer 4 and the specular upper reflective layer 3 in FIG. 15, which further increases the light emitting angle of the LED chip, which is beneficial to the The light is guided to the transparent waveguide layer to increase its light emitting angle and further improve the light mixing effect.
  • the LED light source with large-angle four-sided light is used to shift the main light-emitting energy direction from directly above to the side
  • the light emitting angle is as high as 170 ° or more.
  • the distance between adjacent LED light sources is effectively increased, and the number of particles of the LED light source is greatly reduced, while ensuring the same light mixing effect.
  • the cost of the lens is saved.
  • FIG. 17 is a schematic structural diagram of an embodiment of a surface light source module of the present application
  • FIG. 18 is a schematic structural diagram of another embodiment of a surface light source module of the present application
  • the surface light source module includes a substrate 5, a transparent waveguide layer 6, and a plurality of LED light sources in any of the above embodiments; wherein the substrate 5 may be a transparent or translucent flexible substrate. Specifically, a PI board, a PET board, and a PEV board may be selected. Alternatively, the substrate 5 may be a metal rigid plate, and an aluminum plate, a thin copper plate, or a ceramic plate may be specifically selected.
  • the transparent waveguide layer 6 covers all the LED light sources.
  • the height of the transparent waveguide layer 6 is equal to or higher than the height of the LED light sources.
  • the transparent waveguide layer 6 is a single dielectric and uniformly distributed dielectric layer, and is a high refractive index transparent waveguide layer.
  • one surface of the transparent waveguide layer 6 far from the substrate 5 is defined as the upper waveguide interface, that is, the upper waveguide interface in the figure is the upper surface of the transparent waveguide layer 6.
  • the other surface is the lower waveguide interface, that is, the lower waveguide interface in the figure is the lower surface of the transparent waveguide layer 6;
  • the medium located on both sides of the upper waveguide interface away from the substrate 5 is the first outer medium layer, that is, it is transparent
  • the medium above the upper surface of the waveguide layer 6 is the first external medium layer;
  • the refractive index of the transparent waveguide layer 6 is denoted as n 2
  • the refractive index of the first external medium layer is denoted as n 31 , and n 2 > n 31 .
  • the thickness of the side of the first dielectric transparent layer 4 is denoted by a
  • the height of the first dielectric transparent layer 4 is Let it be denoted by h, the refractive index of the first dielectric transparent layer 4 as n 1 , the refractive index of the transparent waveguide layer 6 as n 2 , and the refractive index of the first outer dielectric layer as n 31.
  • the refractive index of the substrate 5 is denoted as n 4 ; the substrate 5 and the transparent waveguide layer 6 together form a composite waveguide layer, and
  • the upper surface of the composite waveguide layer is defined as the upper waveguide interface, and the lower surface of the composite waveguide layer is defined as the lower waveguide interface;
  • the medium located above the upper waveguide interface is defined as the first external medium layer, and the medium located below the lower waveguide interface Is the second outer medium layer, the refractive index of the first outer medium layer is denoted as n 31 , and the refractive index of the second outer medium layer is denoted as n 32 , n 31 ⁇ n 2 , n 31 ⁇ n 4 , n 32 ⁇ n 2 , N 32 < n 4 .
  • the surface light source module provided in this application further includes: a diffusion film layer 7 located on the transparent waveguide layer 6 side away from the substrate 5, and the diffusion film layer 7 and the transparent There is an air gap between the waveguide layers 6, and the air gap forms the first outer medium layer.
  • the lower surface of the diffusion film layer 7 has uneven microstructures, and the microstructures occupy 10 to 100% of the total area of the diffusion film layer 7; the microstructure of the lower surface of the diffusion film layer 7 is close to the transparent waveguide layer 6
  • the upper waveguide interface forms an air gap.
  • the diffusion film layer 7 may also be located on the side of the substrate 5 away from the transparent waveguide 6 layer. There is an air gap between the diffusion film layer 7 and the substrate 5, and the air gap forms a second outer medium layer.
  • the surface of the side of the diffusion film layer 7 near the substrate 5 has uneven microstructures, and the microstructure accounts for 10 to 100% of the total area of the diffusion film layer 7; the microstructure of the diffusion film layer 7 is closely attached
  • the substrate 5 forms the air gap.
  • the air gap is formed by using the microstructure on the lower surface of the diffusion film layer 7, so that the gap gap that occupies most of the area of the diffusion film layer 7 can be used as a low refractive index layer, and the white light emitted by the LED light source is in the transparent waveguide.
  • a waveguide is formed in layer 6 so that the point light source is converted to a surface light source, which increases the lateral propagation of white light.
  • the air gap existing between the diffusion film layer 7 and the transparent waveguide layer 6 may be changed to the air layer 10, or the air gap existing between the diffusion film layer 7 and the substrate 5 may be changed. It becomes the air layer 10 which serves the same purpose as the air gap.
  • a local scattering microstructure can also be added between the substrate 5 and the diffusion film layer 7, and the local area of the local scattering microstructure is generally provided with a dark area of the LED light sources distributed in an array.
  • Locally scattered microstructured diffuse particles can adopt a spherical structure, which functions similarly to a microlens.
  • Microstructures include holograms, cylindrical lenses, microlens arrays, and stretchable diffraction gratings.
  • the local scattering microstructure can be realized on the surface of the diffusion film by adopting a squeeze roll imprint method, a diffusion lithography method, a hot imprint method, a self-assembly method, and an isotropic etching method.
  • a squeeze roll imprint method When light passes through these particles, it is focused and scattered to a certain range of exit angles, which has the function of enhancing the brightness of the exit light.
  • the diameter of the diffusing particles and the difference in refractive index with the film-forming resin also ensure that light will not be directly emitted from the diffusing film, providing a uniform light mixing effect and uniform brightness.
  • the diffusion film having a scattering microstructure according to the present invention uses a surface periodic or randomly distributed microstructure to refract light from light to modulate the optical state of incident light.
  • the surface light source module structure obtained by using such a light diffusing film with local scattering microstructure has the advantages of wide viewing angle, high transmittance, and uniform light mixing.
  • the surface light source display module provided in the present application may further include a waveguide reflection layer 9 located between the transparent waveguide layer 6 and the substrate 5.
  • the substrate 5 is a plurality of discontinuous strip substrates arranged at intervals, and the LED light sources are correspondingly arranged on the strip substrates, that is, the LED light sources can correspond to the strip substrates one to one. .
  • a method for preparing a surface light source module including the substrate 5 includes:
  • a continuous substrate is selected, and the entire solid crystal is fixed on the substrate, that is, the LED light source is mounted on the substrate, and then the strip substrate 5 with a width of 0.2-3 mm is cut to form one or both ends of each strip substrate 5 pass through.
  • the electrode plate or the electrode device is connected to form an integrated structure;
  • a diffusion film layer 7 is provided on the upper surface of the transparent waveguide layer 6 to form a backlight module, and finally the backlight module is peeled from the backlight plate.
  • the products of this embodiment can be applied to ultra-thin displays, panel lights (with and without bezels), bulb lamps, filament lamps, fluorescent lamps, and street lamps.
  • the LED light source with large angle on all sides shifts the direction of the main light emitting energy from directly above to the side, and the light emitting angle is as high as 170 ° or more.
  • the distance between adjacent light sources is effectively increased, and the number of light source particles is greatly reduced.
  • the surface light source module provided in this application can be applied to the field of backlight.
  • the white light emitted by the LED light source can be used to form a waveguide in the transparent waveguide layer 6, so that the point light source is converted to a surface light source. It increases the horizontal propagation of white light, which can effectively improve the mixed light effect, which is very suitable for the field of high performance display backlight.
  • the specially designed transparent waveguide layer 6 structure is also beneficial to the uniform distribution and emission of white light on the transparent or translucent substrate 1.
  • the above-mentioned surface light source module is suitable for application in the field of electronic lighting paper.

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Abstract

一种LED光源、面光源显示模组和LED光源的制备方法，LED光源包括：LED芯片(1)，包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底；蓝光复激发层(2)，设置于LED芯片(1)的侧面以及衬底的顶面，蓝光复激发层(2)的四个侧面为全出光区；上反射层(3)，设置于蓝光复激发层(2)的顶面，且上反射层(3)顶面为全反射或部分反射区。通过上述方式，能够增大LED光源的出光角度。

Description

一种LED光源、面光源显示模组和LED光源的制备方法 技术领域
本申请涉及光源技术领域，特别涉及一种LED光源、面光源显示模组和LED光源的制备方法。
背景技术
目前，传统直下式面光源显示模组主要包括以下3种类型：(1)在LED光源阵列的上方一定距离位置处设置扩散板，利用扩散板来将点光源变成面光源；(2)在LED光源上紧贴安装透镜，使LED光源发出的光经透镜、空气层传到后照射到扩散板上，进而将点光源变成面光源；(3)在LED光源阵列的表面直接涂覆硅胶加荧光粉形成导光介质层，进而将点光源变成面光源。
由于目前LED光源的出光角度受到限制，例如，LED光源的出光角度最大达到120°左右，当采用第(1)、(2)种类型的面光源时，易形成暗区、且存在混光均匀性差的问题，整个面光源显示模组还较厚，若要减小整个面光源显示模组的厚度，只能通过缩小相邻LED光源之间的间距来实现，但是这会使得LED光源数量成平方的增加，成本大幅提高。当采用第(3)种类型的面光源时，虽然可以降低面光源显示模组的厚度，但由于LED光源出光角度限制，使得LED光源发出的光不利于在荧光粉层内横向传播，横向传播效果有限。
因此，目前急需研发一种出光角度较大的LED光源，以及能够提高混光效果、避免亮度不均且可降低整体厚度的面光源模组。
发明内容
本申请主要解决的技术问题是提供一种LED光源、面光源显示模组和LED光源的制备方法，能够增大LED光源的出光角度。
为解决上述技术问题，本申请采用的一个技术方案是：提供一种LED光源，所述LED光源包括：LED芯片，包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底；蓝光复激发层，设置于所述LED芯片的侧面以及所述衬底远离所述发光层一侧，所述蓝光复激发层的四个侧面为全出光区；上反射层，设置于所述蓝光复激发层的顶面，且所述上反射层顶面为全反射或部分反射区。
为解决上述技术问题，本申请采用的另一个技术方案是：提供一种面光源模组，所述面光源模组包括：基板；多个上述任一实施例所述的LED光源，多个所述LED光源间隔设置于所述基板一侧；透明波导层，设置于所述基板一侧，且覆盖所有所述LED光源，所述透明波导层的高度大于等于所述LED光源的顶面高度。
为解决上述技术问题，本申请采用的又一个技术方案是：提供一种LED光源的制备方法，所述制备方法包括：步骤S1：选取合格的LED芯片，所述LED芯片包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底；步骤S2：将多个所述LED芯片等距排列，使得相邻所述LED芯片之间形成一可填充间隙，再整体在整个LED芯片表面以及可填充间隙内设置蓝光复激发层，并进行烘烤固化得到半成品；步骤S3：在所述半成品顶面形成上反射层；步骤S4：对顶面具有所述上反射层的半成品再次烘烤固化，而后进行切割、裂片，裂片后进行芯片测试、分选、重排，得到LED光源。
本申请的有益效果是：本申请所提供的LED光源中LED芯片的底面设置有下反射层，蓝光复激发层位于LED芯片的侧面以及顶面，上反射层设置于蓝光复激发层的顶面。首先，由于LED光源的上下两侧均设置有反射层，因此，可以通过该上反射层和下反射层将部分光反射至LED芯片的侧面，从而增大LED光源的出光角度；另一方面，由于蓝光波长较短，蓝光在LED光源中吸收较为严重；而本申请所提供的LED光源中包含蓝光复激发层，LED芯片发出的光在上反射层和下反射层之间不断反射时，由于蓝光复激发层的存在，可以将反射回来的蓝光，再经过蓝光复激发层，进一步激发，再进一步混合得到白光，从而可以在实现大角度出光的同时降低蓝光吸收。此外，本申请中所提供的LED光源为独立存在的个体，可以方便地贴装于各种不同的基板。
【附图说明】
图1为传统带反射镜结构的正装LED芯片一实施方式的结构示意图。
图2为传统的带反射镜结构的倒装LED芯片一实施方式的结构示意图。
图3为传统LED光源的出光角度测试图。
图4为传统直下式面出光模组中第一种方式的光强叠加原理图。
图5为传统LED光源加上透镜后的出光角度测试图。
图6为传统直下式面出光模组中采用LED光源加透镜方式的光强叠加原理 图。
图7为传统直下式面出光模组中采用紧密排列LED光源加透镜方式的另一种光强叠加原理图。
图8为传统直下式面出光模组中采用LED光源阵列加荧光粉方式的示意图。
图9为含有荧光粉波导对于点光源的光强度的损耗示意图。
图10为含有荧光粉波导对于线光源的光强度的损耗示意图。
图11为含有荧光粉波导对于面光源的光强度的损耗示意图。
图12为蓝光LED激发的荧光发光光谱图。
图13为本申请LED光源一实施方式的结构示意图。
图14为图13中LED光源的出光角度测试图。
图15为本申请LED光源另一实施方式的结构示意图。
图16为本申请LED光源另一实施方式的结构示意图。
图17为本申请面光源模组一实施方式的结构示意图。
图18为本申请面光源模组另一实施方式的结构示意图。
图19为本申请面光源模组又一实施方式的结构示意图。
图20为图18中一实施方式的局部放大示意图。
图21本申请面光源模组又一实施方式的结构示意图。
图22本申请面光源模组又一实施方式的结构示意图。
【具体实施方式】
请参阅图1-图2，图1为传统带反射镜结构的正装LED芯片一实施方式的结构示意图，图2为传统带反射镜结构的倒装LED芯片一实施方式的结构示意图。该传统带反射镜结构的正装LED芯片包括自下而上依次设置的反射层11、衬底12、N-GaN层13和P-GaN层14。该传统带反射镜结构的倒装LED芯片包括自下而上依次设置的反射层21、P-GaN层22、发光层23、N-GaN层24和衬底25。传统带反射镜结构的正装LED芯片与倒装LED芯片的反射层均设置在LED芯片的底面上，LED芯片均为5面出光。
目前，带反射镜结构的LED芯片封装后形成的LED光源的出光角度只有120°左右，在背光显示和照明行业的面光源应用中，使用受到一定的限制。
例如：在传统直下式面出光模组主要有以下3种方式：
(1)在LED光源阵列的上方一定距离位置处设置扩散板，利用扩散板来将点光源变成面光源；
(2)在LED光源上紧贴安装透镜，使LED光源发出的光经透镜、空气层传到后照射到扩散板上，进而将点光源变成面光源；
(3)在LED光源阵列的表面直接涂覆硅胶加荧光粉形成导光介质层，进而将点光源变成面光源。
上述3种方式均存在一定的缺点或局限性：
具体地，对于第一种方式：如图3、4所示，常规LED光源的出光角度最大达到120°左右，LED光源91与扩散板92之间必须间隔较大的距离才能达到较为均匀的混光效果，整个面出光模组通常很厚，一般只能应用于照明行业，例如面板灯，应用非常局限。
对于第二种方式：如图5、6所示，常规LED光源91上叠加透镜3后的出光角度能够达到135°，其虽然增加了发光角度，且顶面出光大为减少，能够在相对更短的距离内达到较均匀的混光效果，由于需要使用二次光学透镜，扩散板92与二次光学透镜93之间也必须间隔一定的距离，虽然相较第一种方式厚度有所减小，但面出光模组无法达到超薄的效果。
对于第三种方式，如图8所示，其在若干LED芯片91'构成的光源阵列表面涂覆了荧光粉层94，略微增加了白光的横向传播与混光；但由光学理论可知，当蓝光在含有荧光粉的波导中传输时，作为激发光的蓝光强度会因为荧光粉的吸收及不规则散射而快速降低。如图9所示，以点光源为例，其光强在含有荧光粉的波导中传输时，强度在数值上与距离的立方成反比；如图10所示，线光源，其光强在含有荧光粉的波导中传输时，强度在数值上与距离的平方成反比；如图11所示，面光源，其光强在含有荧光粉的波导中传输时，强度在数值上与距离成反比。
总而言之，由于目前LED光源的出光角度受到限制，例如，LED光源的出光角度最大达到120°左右，当采用第(1)、(2)种类型的面光源时，易形成暗区、且存在混光均匀性差的问题，整个面光源显示模组还较厚，若要减小整个面光源显示模组的厚度，只能通过缩小相邻LED光源之间的间距来实现，但是这会使得LED光源数量成平方的增加，成本大幅提高。当采用第(3)种类型的面光源时，虽然可以降低面光源显示模组的厚度，但由于LED光源出光角度限制，使得LED光源发出的光不利于在荧光粉层内横向传播，横向传播效果有 限。此外，由于蓝光激发荧光粉混合得到的白光在导光介质传播过程中衰减严重，蓝光强度降低，沿波导方向的横向传播强度降低；芯片出光亮度不均匀，混光效果差，导致面光源中整面亮度的也不太均匀。因此，芯片排列比较密集，整体限制了更大间距的LED芯片排布方式。
综上所述，我们需要研发出一种大出光角度的LED光源，以及能够提高混光效果、避免亮度不均且可降低整体厚度的面光源模组。
请参阅图13，图13为本申请LED光源一实施方式的结构示意。该LED光源包括：
LED芯片1，LED芯片1采用带反射镜的倒装结构，LED芯片1包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底。
蓝光复激发层2，设置于LED芯片1的侧面以及顶面，蓝光复激发层2的四个侧面为全出光区；在本实施例中，蓝光复激发层2可以为荧光粉层。
上反射层3，设置于蓝光复激发层2的顶面，且上反射层3顶面为全反射或部分反射区。在制备工艺上，部分出光区中，我们可以控制上反射层3的厚度以及透明度，来实现控制反射光的多少，从而实现对LED芯片1侧面出光的调控；此外，在本实施例中，上反射层3中含有用于折射、反射的颗粒状填充物，通过控制半透明的反射层的厚度，有助于提高LED芯片1边缘和侧面的出光量。
以采用半透明半反射的顶面反射结构的LED光源为例，如图14所示，该结构成功的将正常朗伯光型结构的LED光源的主发光方向的主能量角从正上方0°转变成为四周的正负30°。其次，从光强分布上可见也成功的将其发光光强在整个发光角度内呈均匀化分布，即使在正负85°大角度范围下其出光光强仍是光强峰值的64％左右。而在正常朗伯光型结构的LED光源中如果其出光角度为120°，也就是说，当其在正负60°时其出光光强仅为峰值的一半(参见图3)。而本专利中采用半透明半反射的顶面反射结构的LED光源中光强即使在正负85°大角度范围内其光强仍为光强峰值的64％。
即本申请所提供的LED光源中LED芯片1的底面设置有下反射层，蓝光复激发层2位于LED芯片1的侧面以及顶面，上反射层3设置于蓝光复激发层2的顶面。首先，由于LED光源的上下两侧均设置有反射层，因此，可以通过该上反射层3和下反射层将部分光反射至LED芯片1的侧面，从而增大LED光源的出光角度；另一方面，如图12所示，蓝光LED芯片激发的荧光发光光 谱中，绿光、黄光、红光等长波段的光在LED芯片内的吸收率较低，而LED芯片本身发出的蓝光波长较短，吸收率最高，其吸收是最严重；而本申请所提供的LED光源中包含蓝光复激发层2，LED芯片1发出的光在上反射层3和下反射层之间不断反射时，由于蓝光复激发层2的存在，可以将反射回来的蓝光，再经过蓝光复激发层2，进一步激发，再进一步混合得到白光，从而可以在实现大角度出光的同时降低蓝光吸收。此外，本申请中所提供的LED光源为独立存在的个体，可以方便地贴装于各种不同的基板。
在另一个实施方式中，如图15所示，图15为本申请LED光源另一实施方式的结构示意图。该LED光源与图13中区别在于，第一介质透明层4，设置于蓝光复激发层2的顶面和侧面，且上反射层3位于第一介质透明层4的顶面。进一步，在本实施例中，本申请所提供的LED光源还可包括第二介质透明层，位于第一介质透明层4与上反射层3之间，且第一介质透明层4折射率高于在第二介质透明层折射率。上述第一介质透明层4或第二介质透明层的设置，增加了LED芯片1的出光角度，有利于将光导向的透明波导层，增加其出光角度，进一步提升混光效果。
在另一个实施方式中，如图16所示，图16为图13或图15中LED芯片另一实施方式的结构示意图。LED芯片1的顶面设有中反射层8，中反射层8位于LED芯片1的衬底与蓝光复激发层2之间，且中反射层8为部分出光部分反射结构。
下面从制备方法的角度对本申请所提供的LED光源作进一步说明。
(1)当LED光源的结构如图13中所示时，该LED光源可通过以下步骤制备而成：
步骤S1：选取合格的LED芯片1，LED芯片1具有自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层和衬底；
步骤S2：将若干LED芯片1等距排列，使得相邻LED芯片1之间形成一可填充间隙，再整体在整个LED芯片1表面以及可填充间隙内设置荧光粉层，进而形成蓝光复激发层2，并进行烘烤固化得到半成品；
步骤S3：在步骤S2得到的半成品顶面形成界面清晰的镜面状上反射层3；具体地，上反射层3即为在蓝光复激发层2顶面设置一层金属层或在蓝光复激发层2顶面设置有用于折射、反射的颗粒状填充物；
步骤S4：对顶面具有上反射层的半成品再次烘烤固化，而后进行切割、 裂片，裂片后进行芯片测试、分选、重排，得到LED光源。
当LED芯片1的顶面设置有中反射层8时，上述步骤S1进一步调整为：选取LED晶圆片，LED晶圆片具有自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层和衬底，对LED晶圆片进行检测是否合格；并在检测合格的晶圆片顶面衬底表面上设置一层中反射层8，对顶面具有中反射层的LED晶圆片烘烤固化，而后进行切割、裂片，得到自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层、衬底和中反射层8的LED芯片，选取合格的具有中反射层8的LED芯片1；其余步骤不变。这样LED芯片1的上表面和下表面分别具有了中反射层和下反射层。
(2)当LED光源的结构如图15中所示时，该LED光源可通过以下步骤制备而成：
步骤S1：选取合格的LED芯片1，LED芯片1具有自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层和衬底；
步骤S2：将若干LED芯片1等距排列，使得相邻LED芯片1之间形成一可填充间隙，再整体在整个LED芯片1表面以及可填充间隙内设置荧光粉层，进而形成蓝光复激发层2，并进行烘烤固化得到半成品；再对半成品进行切割、裂片，得到具有蓝光复激发层2的半成品，然后将具有蓝光复激发层2的半成品重新等距排列，使得相邻半成品之间形成一可填充间隙，再整体在整个半成品表面以及可填充间隙内设置第一介质透明层4，并进行烘烤固化得到具有蓝光复激发层2和第一介质透明层4的半成品；
步骤S3：在步骤S2得到的半成品顶面形成界面清晰的镜面状上反射层3；具体地，上反射层3即为在蓝光复激发层2顶面设置一层金属层或在蓝光复激发层2顶面设置有用于折射、反射的颗粒状填充物；
步骤S4：对顶面具有上反射层的半成品再次烘烤固化，而后进行切割、裂片，裂片后进行芯片测试、分选、重排，得到LED光源。
当LED芯片1的顶面设置有中反射层8时，上述步骤S1调整为：选取LED晶圆片，LED晶圆片具有自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层和衬底，对LED晶圆片进行检测是否合格；并在检测合格的晶圆片顶面衬底表面上设置一层中反射层8，对顶面具有中反射层的LED晶圆片烘烤固化，而后进行切割、裂片，得到自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层、衬底和中反射层8的LED芯片，选取合格的具有中反射 层8的LED芯片1；其余步骤不变。
当该出光光源还包括第二介质透明层时，上述步骤S3进一步优化为：在具有第一介质透明层4和蓝光复激发层2的半成品顶面依次形成界面清晰的第二介质透明层和镜面状上反射层3；这样，能够在图15的第一介质透明层4与镜面状上反射层3之间多形成一层第二介质透明层，进一步增加了LED芯片的出光角度，有利于将光导向透明波导层，增加其出光角度，进一步提升混光效果。
下面以某规格面板灯为例，将本实施例所提供的如图13所示的LED光源与常规LED光源的对比参数如下表1所示：
表1：600*600mm面板灯应用案例
Figure PCTCN2019099069-appb-000001
从上表1可以看出，在发光区域面积相同、面板灯厚度相同的前提下，本实施例中，由于采用了大角度四面出光的LED光源将主发光能量方向从正上方偏移至侧面，同时，发光角度高达170°以上，与常规LED光源加扩散板结合的面板灯相比，在保证相同混光效果的前提下，有效的提高了相邻LED光源的间距，大幅降低LED光源颗粒数；而与带透镜的常规LED光源加扩散板结合的面板灯相比，不仅颗粒数减少了，同时也节省了透镜的成本。
请参阅图17-19，图17为本申请面光源模组一实施方式的结构示意图，图18为本申请面光源模组另一实施方式的结构示意图，图19为本申请面光源模组又一实施方式的结构示意图。该面光源模组包括基板5、透明波导层6及多个上述任一实施例中的LED光源；其中，基板5可以为透明或半透明柔性基板，具体可选用PI板、PET板、PEV板；或者，基板5也可为金属刚性板，具体可选用铝板、薄铜板、陶瓷板。若干LED光源设置于基板5一侧，且透明波导层6覆盖所有LED光源，透明波导层6的高度等于或高于LED光源的高度。 在本实施例中，透明波导层6为单一介质且均匀分布的介质层，且为高折射率透明波导层。
在一个实施方式中，限定透明波导层6中远离基板5的一个表面为上波导分界面，即图中上波导分界面为透明波导层6的上表面，限定透明波导层6中靠近基板5的另一个表面为下波导分界面，即图中下波导分界面为透明波导层6的下表面；位于上波导分界面两侧中远离基板5的一侧媒质为第一外媒质层，即位于透明波导层6上表面上方的媒质为第一外媒质层；将透明波导层6的折射率记作n 2，第一外媒质层的折射率记作n 31，n 2＞n 31。
可选地，当采用具有第一介质透明层4的LED光源制作面光源模组时，如图20所示，第一介质透明层4侧面的厚度记为a，第一介质透明层4的高度记为h，第一介质透明层4的折射率记为n 1，透明波导层6的折射率记为n 2，第一外媒质层的折射率记为n 31，为了实现光的全反射，需满足：
Figure PCTCN2019099069-appb-000002
在另一个实施方式中，当基板5为透明或半透明基板，基板5的折射率记作n 4；基板5与透明波导层6共同形成复合波导层，且|n 4-n 2|≤0.2；限定复合波导层的上表面为上波导分界面，复合波导层的下表面为下波导分界面；限定位于上波导分界面上方的媒质为第一外媒质层，位于下波导分界面下方的媒质为第二外媒质层，第一外媒质层的折射率记作n 31，第二外媒质层的折射率记作n 32，n 31＜n 2，n 31＜n 4，n 32＜n 2，n 32＜n 4。
在又一个实施方式中，请再次参阅图17-19，本申请所提供的面光源模组还包括：扩散膜层7，位于透明波导层6远离基板5一侧，且扩散膜层7与透明波导层6之间存在空气隙，空气隙形成所述第一外媒质层。在一个应用场景中，扩散膜层7的下表面具有凹凸不平的微结构，且微结构占扩散膜层7总面积的10～100％；扩散膜层7下表面微结构紧贴透明波导层6上波导分界面形成空气隙。
当然，扩散膜层7也可位于基板5远离透明波导6层一侧，扩散膜层7与基板5之间存在空气隙，空气隙形成第二外媒质层。在一个应用场景中，扩散膜层7靠近基板5一侧表面具有凹凸不平的微结构，且微结构占所述扩散膜层7总面积的10～100％；扩散膜层7的微结构紧贴基板5以形成所述空气隙。
上述实施例中，利用扩散膜层7下表面的微结构形成空气隙，可以使得占 扩散膜层7面积中大部分面积的空隙隙作为低折射率层，进而LED光源发出的白光在该透明波导层6内形成波导，使得点光源向面光源转变，增加了白光的横向传播。
此外，如图21-22所示，上述扩散膜层7与透明波导层6之间存在的空气隙可变为空气层10，或者，扩散膜层7与基板5之间存在的空气隙也可变为空气层10，空气层10与空气隙的目的相同。
在另一个实施方式中，为了改善光强不均的情况，提升混光效果，基板5与透明波导层6之间，和/或，透明波导层6与扩散膜层7之间，和/或，基板5与扩散膜层7之间还可增设局部散射微结构，该局部散射微结构区域一般设置呈阵列分布的LED光源的暗区。局部散射微结构的扩散粒子可采用球型结构，其功能和微透镜类似。微结构包括全息、柱面透镜、微透镜阵列和可拉伸衍射光栅。可以通过采用挤压辊压印法、扩散光刻法、热压印、自组装法和各向同性刻蚀的方法，在扩散膜表面实现局部散射微结构。光线在透过这些粒子时被聚焦再散射到一定的出射角度范围内，具有增强出射光亮度的功能。此外，扩散粒子直径、与成膜树脂的折射率差异也保证了光线不会从扩散膜中直射出去，提供了均匀的混光效果和均匀的亮度。本发明所涉及的具有散射微结构的扩散膜，利用表面周期或随机分布的微结构对光的折反射作用来调制入射光的光学状态。采用这类具有局部散射微结构的光扩散膜所得到的面光源模组结构具有视角宽、透过率高、混光均匀等优点。
在另一个实施方式中，请再次参阅图17、18、21、22，本申请所提供的面光源显示模组还可包括波导反射层9，位于透明波导层6与基板5之间。
在又一个实施方式中，如图19所示，基板5为多个间隔设置的非连续式条状基板，且LED光源对应设置在条状基板上，即LED光源可以和条状基板一一对应。
在一个具体地应用场景中，当基板5为多个间隔设置的非连续式条状基板时，包含该基板5的面光源模组的制备方法包括：
(1)选用一连续基板，在基板上整体固晶，即在基板上贴装LED光源，然后分切形成宽度为0.2-3mm的条状基板5，各条状基板5的一端或两端通过电极板或电极装置连接形成一整体结构；
(2)将(1)中整体结构置于可重复使用的模具或背光板上，再在整个背光板上整体涂覆高折射透明材料(硅胶或亚克力材料)，使得高折射透明材料 覆盖整个条状基板表面及相邻条状基板之间的区域，最后整体模压成型，形成覆盖LED光源的透明波导层6；
(3)在透明波导层6的上表面设置扩散膜层7，形成背光模组，最后将背光模组从背光板上剥离。
本实施例产品可应用于超薄显示器、面板灯(有边框和无边框)、球泡灯、灯丝灯、日光灯、路灯。
下面以6英寸手机背光应用为例，采用如图13所示的大角度出光的LED光源制得的面光源模组与传统方式直下式背光模组的各项参数如下表2所示：
表2：6英寸手机背光应用案例
Figure PCTCN2019099069-appb-000003
从表2可以看出，在发光区域面积相同、背光模组厚度相同的前提下，大角度四面出光的LED光源将主发光能量方向从正上方偏移至侧面，同时，发光角度高达170°以上，在保证相同混光效果的前提下，有效的提高了相邻光源的间距，大幅降低光源颗粒数。
本申请所提供的面光源模组可应用于背光领域，本申请所提供的面光源模组结构中，利用LED光源发出的白光可在透明波导层6内形成波导，使得点光源向面光源转变，增加了白光的横向传播，可有效提升混光效果，非常适合于高性能显示背光领域。同时特殊设计的透明波导层6结构还有利于白光在透明或半透明基板1上的均匀分布而出射。以上实施例的面光源模组适合应用于电子照明纸领域。
以上显示和描述了本发明的基本原理和主要特征以及本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。 本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (20)

  1. 一种LED光源，其特征在于，包括：
    LED芯片，包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底；
    蓝光复激发层，设置于所述LED芯片的侧面以及所述衬底的顶面，所述蓝光复激发层的四个侧面为全出光区；
    上反射层，设置于所述蓝光复激发层的顶面，且所述上反射层顶面为全反射或部分反射区。
  2. 根据权利要求1所述的LED光源，其特征在于，所述LED光源还包括：
    中反射层，位于所述LED芯片的所述衬底与所述蓝光复激发层之间，且所述中反射层为部分出光部分反射结构。
  3. 根据权利要求1或2所述的LED光源，其特征在于，所述LED光源还包括：
    第一介质透明层，设置于所述蓝光复激发层的顶面和侧面，且所述上反射层位于所述第一介质透明层的顶面。
  4. 根据权利要求3所述的LED光源，其特征在于，所述LED光源还包括：
    第二介质透明层，位于所述第一介质透明层的顶面和所述上反射层之间，且所述第一介质透明层的折射率大于所述第二介质透明层的折射率。
  5. 根据权利要求1所述的LED光源，其特征在于，
    所述蓝光复激发层为荧光粉层。
  6. 一种面光源模组，其特征在于，所述面光源模组包括：
    基板；
    多个权利要求1-5任一项所述的LED光源，多个所述LED光源间隔设置于所述基板一侧；
    透明波导层，设置于所述基板一侧，且覆盖所有所述LED光源，所述高折射率透明波导层的高度大于等于所述LED光源的顶面高度。
  7. 根据权利要求6所述的面光源模组，其特征在于，所述面光源模组还包括：
    扩散膜层，位于所述透明波导层远离所述基板一侧，且所述扩散膜层与所述透明波导层之间存在空气层或空气隙；和/或，位于所述基板远离所述透明波导层一侧，所述扩散膜层与所述基板之间存在空气层或空气隙。
  8. 根据权利要求7所述的面光源模组，其特征在于，
    所述扩散膜层与透明波导层之间存在所述空气隙时，所述扩散膜层靠近所述透明波导层一侧表面具有凹凸不平的微结构，且所述微结构占所述扩散膜层总面积的10～100％；所述扩散膜层的所述微结构紧贴所述透明波导层以形成所述空气隙；和/或，
    所述扩散膜层与基板之间存在所述空气隙时，所述扩散膜层靠近所述基板一侧表面具有凹凸不平的微结构，且所述微结构占所述扩散膜层总面积的10～100％；所述扩散膜层的所述微结构紧贴所述基板以形成所述空气隙。
  9. 根据权利要求7所述的面光源模组，其特征在于，所述面光源模组还包括：
    局部散射微结构，位于所述基板与所述透明波导层之间，和/或，位于所述透明波导层与所述扩散膜层之间，和/或，位于所述基板与所述扩散膜层之间。
  10. 根据权利要求7所述的面光源模组，其特征在于，所述面光源模组还包括：
    第一外媒质层，位于所述透明波导层远离所述基板一侧，所述透明波导层的折射率记作n 2，所述第一外媒质层的折射率记作n 31，n 2＞n 31；
    其中，当所述扩散膜层与所述透明波导层之间存在空气层或空气隙时，所述空气层或所述空气隙形成所述第一外媒质层。
  11. 根据权利要求10所述的面光源模组，其特征在于，
    所述LED光源包括第一介质透明层，所述第一介质透明层侧面的厚度记a，所述第一介质透明层的高度h，所述第一介质透明层的折射率n 1，所述透明波导层的折射率n 2，所述第一外媒质层的折射率n 31满足以下公式：
    Figure PCTCN2019099069-appb-100001
  12. 根据权利要求7所述的面光源模组，其特征在于，
    所述基板为透明或半透明基板，所述基板的折射率记作n 4，所述透明波导层的折射率记为n 2，所述基板与透明波导层共同形成复合波导层，且|n 4-n 2|≤0.2，且n 4＞n 31。
  13. 根据权利要求12所述的面光源模组，其特征在于，所述面光源模组还包括：
    第二外媒质层，位于所述基板远离所述透明波导层一侧，所述第二外媒质 层的折射率记作n 32，且n 4＞n 32，n 2＞n 32；
    其中，当所述扩散膜层与所述基板之间存在空气层或空气隙时，所述空气层或所述空气隙形成所述第二外媒质层。
  14. 根据权利要求6所述的面光源模组，其特征在于，
    所述透明波导层为单一介质且均匀分布的介质层。
  15. 根据权利要求6所述的面光源模组，其特征在于，所述面光源模组还包括：
    波导反射层，位于所述透明波导层与所述基板之间。
  16. 根据权利要求6所述的面光源模组，其特征在于，
    所述基板为多个间隔设置的非连续式条状基板，且所述LED光源对应设置在所述条状基板上。
  17. 一种LED光源的制备方法，其特征在于，所述制备方法包括：
    步骤S1：选取合格的LED芯片，所述LED芯片包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底；
    步骤S2：将多个所述LED芯片等距排列，使得相邻所述LED芯片之间形成一可填充间隙，再整体在整个LED芯片表面以及可填充间隙内设置蓝光复激发层，并进行烘烤固化得到半成品；
    步骤S3：在所述半成品顶面形成上反射层；
    步骤S4：对顶面具有所述上反射层的半成品再次烘烤固化，而后进行切割、裂片，裂片后进行芯片测试、分选、重排，得到LED光源。
  18. 根据权利要求17所述的制备方法，其特征在于，在所述步骤S1中，所述LED芯片包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层、衬底和中反射层，所述步骤S1包括：
    选取LED晶圆片，所述LED晶圆片具有自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底；
    对LED晶圆片进行检测是否合格；
    在检测合格的晶圆片顶面衬底表面上设置一层中反射层；
    对顶面具有中反射层的LED晶圆片烘烤固化，而后进行切割、裂片，得到自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层、衬底和中反射层的LED芯片。
  19. 根据权利17或18所述制备方法，其特征在于，在步骤S2与S3之间， 所述制备方法还包括：
    对半成品进行切割、裂片，得到具有蓝光复激发层的半成品；
    将多个具有蓝光复激发层的半成品重新等距排列，使得相邻半成品之间形成一可填充间隙；
    整体在整个半成品表面以及可填充间隙内设置第一介质透明层，并进行烘烤固化得到具有蓝光复激发层和第一介质透明层的半成品。
  20. 根据权利要求19所述的制备方法，其特征在于，所述步骤S3包括：
    在具有第一介质透明层和蓝光复激发层的半成品顶面依次形成界面清晰的第二介质透明层和镜面状上反射层。
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