WO2020087779A1 - 一种面光源显示模组 - Google Patents

一种面光源显示模组 Download PDF

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Publication number
WO2020087779A1
WO2020087779A1 PCT/CN2019/071064 CN2019071064W WO2020087779A1 WO 2020087779 A1 WO2020087779 A1 WO 2020087779A1 CN 2019071064 W CN2019071064 W CN 2019071064W WO 2020087779 A1 WO2020087779 A1 WO 2020087779A1
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Prior art keywords
light source
layer
led
display module
particles
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PCT/CN2019/071064
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English (en)
French (fr)
Inventor
查国伟
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武汉华星光电技术有限公司
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Priority to US16/323,790 priority Critical patent/US10707390B1/en
Publication of WO2020087779A1 publication Critical patent/WO2020087779A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1652—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being flexible, e.g. mimicking a sheet of paper, or rollable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to the field of flat display, in particular, a surface light source display module which can be used for OLED and other flat display devices.
  • wearable smart application devices such as smart glasses and smart watches
  • this also promotes as an important component in wearable smart devices: the continuous development of display devices and the continuous growth of production.
  • the width and narrowness of the frame of the display device are obviously related to the effective display area of the display screen. At the same size, if the frame width is wider, the corresponding effective display area is smaller, and if the frame width is narrower, the effective display area is larger.
  • the common solution in the industry is to use the COF (circuit on film, film circuit) solution, that is, only the FPC bonding area is reserved in the lower edge area, and the IC bonding is placed directly on the FPC.
  • the application of the COF scheme can compress the lower edge to about 3mm or even 2mm, but there is still a large gap between the left and right edges less than 1mm. How to achieve a comprehensive narrow border around the display has become the next key breakthrough direction of the display device.
  • the current small-size displays use a side-entry light entry scheme, where the LED lightbar is located at the lower edge of the display. Because the LED itself has a certain thickness, and because the LED serves as a point light source, it needs to diffuse the light evenly through the astigmatism of the light guide plate, so as to avoid the hotspot phenomenon at the near beam, which requires a certain mixing distance.
  • the compression of the light mixing distance is usually accompanied by a sharp attenuation of the backlight efficiency, so that there is a certain limit to the backlight bottom frame of the existing center-size liquid crystal module, for example, about 2mm.
  • the lower edge of the display device can be compressed to the same size as the left and right edges, the distance between the effective display area of the backlight and the lower edge spacing of the effective display area still need to be considered.
  • the backlight instead, the lower bezel will become a key constraint for achieving a full screen (extremely narrow bezel).
  • One aspect of the present invention is to provide a surface light source display module that can achieve a low light mixing distance and a thinner module thickness under the condition of using relatively few LEDs or the same number of LEDs; The reflectivity of the red and green light bands, thereby achieving an efficient, ultra-thin surface light source display module.
  • the surface light source display module according to the present invention can be applied to OLED display devices, but is not limited thereto.
  • a surface light source display module includes a substrate and an LED array arranged on the substrate.
  • a plurality of LED particles are arranged on the LED array.
  • the light shape emitted by the LED particles is a wide light shape, and the light intensity at the center of 0 ° is distributed at 30-50 candela, and the light intensity at the polar angle ⁇ from the center is ⁇ at 50-120 candela candela), where ⁇ [30,80].
  • the present invention adopts a broad-light LED, so that the surface light source module of the present invention can use fewer LEDs or the same number of LEDs at the same thickness than the surface light source module using the ordinary LED light shape It can achieve a smaller light mixing distance and a thinner module thickness.
  • the LED particles in the LED array include flip-chip LED chips (package-free flip-chip LED chips), wherein the LED particles adopt a flip-chip coplanar cathode and anode structure, and Arranged by dense periodic array.
  • the LED array according to the present invention reduces the center distance between adjacent LED particles by adopting small-sized unencapsulated LED particles and dense periodic array arrangement, thereby achieving extremely low light mixing distance With the thickness of the backlight module, to meet the needs of small-size backlight modules ( ⁇ 1mm).
  • the size of the small-sized LED particles involved therein may be 100-600 ⁇ m, and the spacing between adjacent LED particles may be 100-1000 ⁇ m.
  • a flat layer is provided on the LED array to fill gaps between adjacent LED particles in the LED array, and the material of the flat layer is 380-
  • the 780nm visible light band has a low absorption rate, for example, less than 10%, or less than 5%, even less than 1%, and so on.
  • the material used for the flat layer may be silicone, colorless PI, PMMA, etc., which may be determined according to needs without limitation.
  • the flat layer is provided with a band pass band reverse layer, a fluorescent layer, a diffusion layer, and a brightness enhancement layer
  • the band pass band reverse layer can transmit photons in the blue wavelength band and reflect Green and red band photons.
  • the band pass band layer is disposed between the flat layer and the fluorescent layer, so that after the blue photons emitted by the LED pass through the band pass band reverse layer, part of the blue photons are captured by the fluorescent layer Absorption is converted into red-green photons (or yellow photons), and the blue, red, and green photons are emitted after passing through the diffusion layer and the brightness enhancement layer, where photons with partial angle (BEF) and partial polarization state (DBEF or APCF) After passing through the brightness enhancement layer, it will be returned to the backlight system for recycling, in which red and green photons are re-reflected after contacting the band pass band reverse layer, therefore, compared with the traditional structure, it needs to be reflected after contacting the white substrate , With higher recycling efficiency, which can significantly improve the brightness efficiency of the backlight of the surface light source of the present invention.
  • BEF partial angle
  • DBEF or APCF partial polarization state
  • the band pass band reverse layer is a film layer structure. Specifically, it can be prepared in a lamination lamination mode, or an inorganic material can be prepared on a film substrate through a coating process, or directly prepared on the surface of the flat layer.
  • the band pass band reflective film layer adopts the principle of refraction and interference of wave optics, so its transflective effect depends on the specific optical path and will depend on the incident angle of the incident light, so its transflective characteristics will show a certain
  • the angle shift phenomenon with the angle will specifically show a blue shift phenomenon as the angle increases.
  • the thin-surface light source display module uses a broad-beam LED in combination with the band-pass band reversal layer, wherein the band-pass band reversal layer is designed at the incident angle of incident light on the film layer When it is ⁇ , it has the best transmittance and reflectance; when the angle is less than ⁇ , the overall transmittance shows a red-shifted characteristic as the angle decreases; when the angle is greater than ⁇ , the overall transmittance increases with the angle
  • the blue shift feature is present, so that the maximum light intensity angle of the LED and the optimal recycling angle of the band pass band reverse layer can be strictly matched, thereby achieving a high brightness efficiency design.
  • the angle of incidence of the anti-layer of the band pass band is the angle between the incident light and the plane where the surface is located.
  • the incident light is the irradiation light emitted by the LED particles below
  • the angle between the light and the plane of the reverse layer of the band pass band is the incident angle of the irradiation light.
  • the fluorescent layer may be in the form of a diaphragm.
  • the fluorescent layer is directly fixed on the surface of the metal wire grid layer by coating and hot pressing.
  • the fluorescent layer contains phosphor particles and scattering particles, or contains quantum dot particles, etc., which may be determined according to needs without limitation.
  • the substrate may be an FPC substrate, a PCB, or the like, which may be specific according to needs and is not limited.
  • the FPC substrate as an example, it usually covers the surface of the substrate with a white reflective substrate, and its reflectivity is usually 70-90%, which is larger than the 99% reflectivity difference of the traditional side-lit backlight reflector, and the final backlight mode
  • the relationship between the group brightness and the reflectivity is higher than the linear increase, so it is of great significance to improve the reflectivity of the substrate, but it is difficult for the white substrate to achieve an essential breakthrough under the current process conditions.
  • the band-pass band reverse layer is composed of multiple layers of materials with different refractive indexes, and realizes the band-pass band reverse characteristics through the principles of wave optics refraction and interference. Its optimal transmittance and reflectance can be greater than 95% or even 99% design, which has greater advantages than the white reflective substrate.
  • the present invention relates to a surface light source display module.
  • a surface light source display module By adopting an LED array composed of broad-beam LED particles, a large pitch design is realized; at the same time, due to the luminous characteristics of the "wide-beam” LED particles, It can also achieve the effect of low light mixing distance and thinner module thickness under the condition of using relatively few LEDs or the same number of LEDs.
  • FIG. 1 is a cross-sectional structural diagram of a surface light source display module according to an embodiment of the present invention
  • FIG. 2 is a surface light source display module according to an embodiment of the present invention, which relates to a broad-beam characteristic diagram in which LED particles used emit light.
  • An embodiment of the present invention provides a surface light source display module, which can achieve a low light mixing distance and a thinner module thickness under the conditions of using relatively few LED particles or the same number of LEDs, and an improvement The reflectivity of the red and green light bands, thereby achieving an efficient, ultra-thin surface light source display module.
  • the surface light source display module according to the present invention can be applied to OLED display devices, but is not limited thereto.
  • a surface light source display module includes a substrate 10, an LED array, a flat layer 30, a band pass band reverse layer 40, a fluorescent layer 50, a diffusion layer 60, and a brightness enhancement layer 70 disposed in this order.
  • the substrate may be an FPC substrate, or a PCB, etc.
  • the specifics may be determined according to needs and are not limited.
  • the FPC substrate as an example, it usually covers the surface of the substrate with a white reflective substrate, and its reflectivity is usually 70-90%, which is larger than the 99% reflectivity difference of the traditional side-lit backlight reflector, and the final backlight mode
  • the relationship between the group brightness and the reflectivity is higher than the linear increase, so it is of great significance to improve the reflectivity of the substrate, but it is difficult for the white substrate to achieve an essential breakthrough under the current process conditions.
  • the band pass band reverse layer is composed of multiple layers of materials with different refractive indexes, and realizes the band pass band reverse characteristics through the principles of wave optics refraction and interference, and its optimal transmittance and reflectance can be greater than 95% Even the 99% design has a greater advantage than the white reflective substrate.
  • the LED array is disposed on the substrate 10, and the LED particles 22 used in the array may be a small-size unpackaged flip chip LED (mini flip-chip LED chip), which adopts flip-chip coplanar cathode and anode structures, and is arranged in a dense periodic array, by reducing the center distance between adjacent LED particles to achieve extremely low light mixing distance and thin
  • the thickness of the backlight module can meet the needs of small-size backlight modules ( ⁇ 1mm).
  • the size of the small-sized LED particles may be 100-600 ⁇ m, and the spacing between adjacent LED particles may be 100-1000 ⁇ m.
  • the LED particles 22 have a light-emitting shape with a broad-beam shape.
  • its light shape has the characteristics of a bat wing, as shown in Figure 2, that is, the center 0 ° has a low intensity distribution, for example, 30-50 candela; when the polar angle from the center is ⁇ , it shows the maximum light intensity distribution, for example , 50 ⁇ 120 candela, where ⁇ [30,80].
  • the broad-beam shape of the LED particles 22 can ensure that the surface light source module of the present invention can use fewer LED particles at the same thickness or the same LED than the module using the ordinary LED light shape The number of particles achieves a smaller light mixing distance and a thinner module thickness.
  • the material used has a low absorption rate in the visible light band of 380-780 nm, for example, within 10% .
  • the material used for the flat layer may be silicone, colorless PI, PMMA, etc., which may be determined according to needs without limitation.
  • the band-pass-band inversion layer 40 provided on the flat layer 30 can transmit the photons in the blue wavelength band and reflect the photons in the green and red wavelength bands.
  • a fluorescent layer 50, a diffusion layer 60, and a brightness enhancement layer 70 are provided on the band pass band reverse layer 40.
  • the band pass band layer 40 is disposed between the flat layer 30 and the fluorescent layer 50, so that after the blue photons emitted by the LED 22 pass through the band pass band reverse layer 30, part of the blue photons Absorbed by the fluorescent layer 50 and converted into red-green photons (or yellow photons), the blue, red, and green photons exit through the diffusion layer 60 and the brightness enhancement layer 70, where part of the angle (BEF) and part of the polarization state (DBEF Or APCF) photons will return to the backlight system for recycling after passing through the brightness enhancement layer 70, where red and green photons will be re-reflected after contacting the band pass band reverse layer 40.
  • the reflection after contacting the white substrate has a higher efficiency of recycling light, and thus can significantly improve the brightness efficiency of the surface light source backlight.
  • the band pass band reverse layer 40 may be a film layer structure. Specifically, it can be prepared in a lamination lamination mode, or an inorganic material can be prepared on a film substrate through a coating process, or directly prepared on the surface of the flat layer.
  • the band-pass band reflection layer 40 uses the principle of refraction and interference of wave optics, so its transflective effect depends on the specific optical path and the incident angle of light, so its transflective characteristics will show a certain random
  • the angle shift phenomenon will specifically show a blue shift phenomenon as the angle increases.
  • the thin-surface light source display module adopts a design of a wide-beam LED 22 in combination with the band-pass band reverse layer 40.
  • the design of the band pass band reverse layer 40 is the angle at which the LED particles irradiate the light into it (that is, the angle between the irradiation light of the LED particles and the plane where the surface of the band pass band reverse layer is located) ) Is ⁇ , it has the best transmittance and reflectance for the light emitted by the LED particles; when the angle is less than ⁇ , the overall transmittance shows a red-shifted characteristic as the angle decreases; when the angle is greater than ⁇ , The overall transmittance exhibits a blue shift characteristic with increasing angle, combined with the broad-beam LED
  • the light-emitting characteristics of 22 can be strictly matched with the maximum light intensity angle of the LED 22 and the optimal recycling angle of the band pass band reverse layer, so as to achieve a high brightness efficiency design.
  • the fluorescent layer 50 may be in the form of a diaphragm.
  • the fluorescent layer 50 is directly fixed on the surface of the metal wire grid layer by hot pressing directly by coating.
  • the fluorescent layer 50 includes phosphor particles and scattering particles, or quantum dot particles, etc., which may be determined according to needs without limitation.
  • the present invention relates to a surface light source display module, which adopts an LED array composed of wide-light LED particles to achieve a large pitch design; at the same time, due to the light-emitting characteristics of the LED, it can be used in relatively few Under the condition of the same number of LEDs, it can achieve the effect of low light mixing distance and thinner module thickness.
  • the reflectivity of the red and green light band is improved by adding a band pass band reverse layer between the LED array layer and the color conversion layer, wherein the transmittance and reflectance of the band pass band reverse layer are in the broad light
  • the maximum angle of the luminous flux of the shape LED reaches the maximum.
  • the overall frequency spectrum exhibits a red-shift feature
  • the overall frequency spectrum exhibits a blue-shift feature. Light efficiency, thereby realizing the high-efficiency, ultra-thin surface light source display module related to the present invention.

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Abstract

一种面光源显示模组，包括基板（10）和设置在基板上的LED阵列，其中LED阵列上设置的LED颗粒（22）所发出的光形为广光形，其中心0°具有较低的强度分布，在偏离中心极角为θ时呈现高光强分布，其中θ∈[30,80]。通过采用广光形的LED颗粒（22）组成的LED阵列，使得面光源模组较采用普通LED光形的光源模组在相同厚度下，可采用更少颗的LED或者在相同LED数量下实现更小的混光距离与模组厚度。

Description

一种面光源显示模组 技术领域
本发明涉及平面显示领域，尤其是，一种可用于OLED等面显示器件上的面光源显示模组。
 背景技术
已知，随着科技的不断进步以及人们生活水平的不断提高，可穿戴智能应用设备，如智能眼镜、智能手表等，已逐渐成为人们日常生活中的一部分。相应的，这也促进了作为可穿戴智能设备中的重要组件：显示器件的不断向前发展以及产量的不断增长。
其中，显示器件的边框的宽、窄程度很明显与显示屏幕的有效显示面积相关较大。同尺寸下，边框宽度较宽则相应的有效显示面积较小，边框宽度较窄，则有效显示面积较大。
对此，业界将现有显示屏的上边缘（border）和左、右边缘均已压缩至极小的边框，基本能够满足现阶段市场对于“全面屏”的需求。但是，在下边缘处由于需要做数据线扇出（Data line Fanout）以及预留IC绑定（bonding）区，使得下边缘的进一步压缩成为当前急需解决的技术问题。
对此，业界通用的解决方案是采用COF（circuit on film，胶片电路）方案，即在下边缘区仅预留FPC bonding区，而IC bonding直接放置在FPC上。COF方案的应用可以将下边缘压缩至3mm甚至2mm左右，但是相对于左、右边缘小于1mm依然存在较大的差距，如何实现显示屏四周全面窄边框，已成为显示装置下一个重点突破方向。
于此同时，目前小尺寸显示器采用的是侧入式入光方案，其中LED lightbar位于显示屏的下边缘处。由于LED本身存在一定的厚度，同时由于LED作为点光源，本身需要通过导光板的散光作用将光线均匀扩散开，从而避免近光处的hotspot现象，这就需要一定的混光距离。而混光距离的压缩通常会伴随着背光效率的急剧衰减，使得现有中心尺寸液晶模组的背光下边框存在一定的极限，例如2mm左右。
因此，即使显示装置的下边缘能够压缩至与左、右边缘处相同大小，仍然需要考量背光有效显示区距离以及有效显示区的下边缘间距，未来在边框下边缘压缩至极窄水平时，背光的下边框反而会成为实现全面屏（极致窄边框）的关键制约。
 技术问题
本发明的一个方面是提供一种面光源显示模组，其能够在使用相对较少的LED或者在相同LED颗数的条件下，实现低混光距离与较薄模组厚度；并且还能提升红绿光波段的反射率，从而实现高效、超薄面光源显示模组。
进一步的，本发明涉及的所述面光源显示模组可以适用于OLED显示器件上，但不限于。
 技术解决方案
本发明采用的技术方案如下：
一种面光源显示模组，其包括基板和设置在所述基板上的LED阵列。所述LED阵列上布置有多个LED颗粒。其中所述LED颗粒所发出的光形为广光形，其中心0°的光强分布在30~50坎德拉（candela），在偏离中心极角为θ时的光强分布在50~120坎德拉（candela），其中θ∈[30,80]。
其中本发明通过采用广光形的LED，使得本发明涉及的所述面光源模组较采用普通LED光形的面光源模组在相同厚度下可采用更少颗的LED，或者在相同LED数量下能够实现更小的混光距离与较薄的模组厚度。
进一步的，在不同实施方式中，其中所述LED阵列中的LED颗粒包括无封装倒装芯片式LED (flip-chip LED chip)，其中所述LED颗粒采用倒装芯片共面阴阳极结构，并通过密集周期阵列式排布。
本发明涉及的所述LED阵列，通过采用小尺寸无封装的LED颗粒以及密集周期阵列式排布的方式，来减小相邻LED颗粒之间的中心间距，从而实现了极低的混光距离与背光模组厚度，进而满足小尺寸背光模组需求（<1mm）。具体的，其中涉及使用的所述小尺寸LED颗粒的尺寸可以为100-600μm，相邻LED颗粒之间的间距可以为100-1000μm。
进一步的，在不同实施方式中，其中所述LED阵列上设置有平坦层，用以填平所述LED阵列中相邻LED颗粒间存有的间隙，其中所述平坦层采用的材质在380-780nm可见光波段具有低吸收率，例如，小于10%，或者小于5%，甚至小于1%等等。具体的所述平坦层采用的材料，可以是硅胶、无色PI以及PMMA等等，具体可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述平坦层上设置有带通带反层、荧光层、扩散层和增亮层，其中所述带通带反层能够透过蓝光波段的光子并且反射绿光与红光波段光子。
其中所述带通带层设置于所述平坦层与所述荧光层之间，从而使得所述LED发射出的蓝光光子通过所述带通带反层后，其中部分蓝光光子被所述荧光层吸收转换为红绿光子（或者黄色光子），所述蓝、红、绿光子经过所述扩散层和增亮层后出射，其中部分角度（BEF）、部分偏振态（DBEF或者APCF）的光子在经过所述增亮层后会重新返回进所述背光系统循环利用，其中红绿光子在接触所述带通带反层后重新反射，因此，较传统结构需在接触所述白色基材后反射，具有更高的循环回光效率，从而能够显著提升本发明涉及所述面光源背光亮度效率。
进一步的，在不同实施方式中，其中所述带通带反层为膜层结构。具体可以采用压合叠层模式制备，或者采用无机材料通过镀膜工艺制备于膜片基材，或者直接制备于所述平坦层的表面。
其中，所述带通带反膜层采用的是波动光学的折射、干涉原理，因而其透反效果依赖于具体的光程，会依赖于入射光线的入射角度，因而其透反特性会呈现一定的随角度偏移现象，具体的会随着角度的增加而呈现蓝移现象。
进一步的，本发明涉及的所述薄面光源显示模组，是采用广光形LED结合所述带通带反层，其中所述带通带反层在膜层设计上为在入射光的入射角度为θ时具有最优的透过率与反射率；在角度小于θ时，整体透过率随着角度的减小呈现红移特征；在角度大于θ时，整体透过率随着角度的增加而呈现蓝移特征，从而可以严格匹配LED的最大光强角度与所述带通带反层的最佳循环回光角度，进而实现高亮度效率设计。
其中所述带通带反层的入射角，即为入射光与其表面所在平面之间的夹角。在本发明中，所述入射光为下方的所述LED颗粒发出的照射光，其光线与所述带通带反层平面之间的夹角，即为所述照射光的入射角。
进一步的，在不同实施方式中，其中所述荧光层可以是以膜片的形式存在。在一个制备的具体实施方式中，所述荧光层是直接通过涂布的方式热压固定于金属线栅层表面。具体的，所述荧光层包含荧光粉颗粒和散射粒子，或者包含量子点粒子等，具体可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述基板可以是FPC基板，也可以是PCB等，具体可随需要而定，并无限定。
以FPC基板为例，其通常会在基材表面覆盖白色反射基材，其反射率通常为70-90%，较传统侧入式背光反射片99%的反射率差距较大，而最终背光模组亮度与反射率关系呈现高于线性增加的关系，因而提升基板的反射率具有重大的意义，但是白色基材在现行工艺条件下难以获得本质突破。所述带通带反层采用折射率不同的材料通过多层堆叠构成，通过波动光学的折射、干涉等原理实现带通带反特性，其最优透过率、反射率可实现大于95%甚至99%设计，较所述白色反射基材具有较大优势。
 有益效果
本发明涉及的一种面光源显示模组，通过采用由广光形的LED颗粒组成LED阵列，实现了大pitch设计；同时由于采用的所述LED颗粒“广光形”的发光特性，使得其还能在使用相对少颗的LED或者在相同LED颗数的条件下，实现低混光距离与较薄模组厚度的功效。
进一步的，通过在所述LED阵列层与颜色转换层之间增加带通带反层以提升红绿光波段的反射率，其中所述带通带反层的透过率与反射率在所述广光形的LED光通量最大的角度达成最大值，在角度小于所述最大角度时整体频谱呈现红移特征，在角度大于所述角度时整体频谱呈现蓝移特征，上述特性提升了广光形LED的回光效率，从而实现了本发明涉及的高效、超薄面光源显示模组。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一个实施例中涉及的一种面光源显示模组的剖面结构图；
图2为本发明一个实施例中涉及的一种面光源显示模组，其涉及使用的LED颗粒发光的广光形特征图。
 本发明的实施方式
以下将结合附图和实施例，对本发明涉及的一种面光源显示模组的技术方案作进一步的详细描述。
本发明的一个实施方式提供了一种面光源显示模组，其能够在使用相对较少的LED颗粒或者在相同LED颗数的条件下，实现低混光距离与较薄模组厚度，以及提升红绿光波段的反射率，从而实现高效、超薄面光源显示模组。本发明涉及的所述面光源显示模组可以适用于OLED显示器件上，但不限于。
请参阅图1所示，一种面光源显示模组，其包括依次设置的基板10、LED阵列、平坦层30、带通带反层40、荧光层50、扩散层60以及增亮层70。
其中所述基板可以是FPC基板，也可以是PCB等，具体可随需要而定，并无限定。
以FPC基板为例，其通常会在基材表面覆盖白色反射基材，其反射率通常为70-90%，较传统侧入式背光反射片99%的反射率差距较大，而最终背光模组亮度与反射率关系呈现高于线性增加的关系，因而提升基板的反射率具有重大的意义，但是白色基材在现行工艺条件下难以获得本质突破。所述带通带反层为采用折射率不同的材料通过多层堆叠构成，通过波动光学的折射、干涉等原理实现带通带反特性，其最优透过率、反射率可实现大于95%甚至99%设计，较所述白色反射基材具有较大优势。
所述LED阵列是设置在所述基板10上，其阵列中涉及使用的LED颗粒22，可以是一种小尺寸无封装倒装芯片式LED（mini flip-chip LED chip），其采用flip-chip共面阴阳极结构，并以密集周期阵列式排布，通过减小相邻LED颗粒之间的中心间距来实现极低的混光距离与较薄的背光模组厚度，从而能够满足小尺寸背光模组需求（<1mm）。
其中在一个具体实施方式中，所述小尺寸LED颗粒的尺寸可以为100-600μm，相邻LED颗粒之间的间距可以为100-1000μm。
进一步的，采用的所述LED颗粒22，其出光形具有广光形特征。典型的，其光形具有蝙蝠翼特征，如图2所示，即中心0°具有较低的强度分布，例如，30~50坎德拉；在偏离中心极角为θ时呈现最大光强分布，例如，50~120坎德拉，其中θ∈[30,80]。
其中所述LED颗粒22发光的广光形特征可保证本发明涉及的所述面光源模组较采用普通LED光形的模组在相同厚度下可采用更少颗的LED颗粒，或者在相同LED颗粒数量下实现更小的混光距离与较薄的模组厚度。
进一步的，其中所述平坦层30，是用以填平所述LED阵列中相邻LED颗粒22间存有的间隙，其采用的材质在380-780nm可见光波段具有低吸收率，例如10%以内。具体的所述平坦层采用的材料，可以是硅胶、无色PI以及PMMA等等，具体可随需要而定，并无限定。
其中所述平坦层30上设置的带通带反层40，其能够透过蓝光波段的光子并且反射绿光与红光波段光子。所述带通带反层40上设置有荧光层50、扩散层60和增亮层70。
其中所述带通带层40设置于所述平坦层30与所述荧光层50之间，从而使得所述LED 22发射出的蓝光光子通过所述带通带反层30后，其中部分蓝光光子被所述荧光层50吸收转换为红绿光子（或者黄色光子），所述蓝、红、绿光子经过扩散层60和增亮层70后出射，其中部分角度（BEF）、部分偏振态（DBEF或者APCF）的光子在经过所述增亮层70后会重新返回进所述背光系统循环利用，其中红绿光子在接触所述带通带反层40后重新反射，如此，较传统结构需在接触所述白色基材后反射具有更高的循环回光效率，因而能够显著提升所述面光源背光亮度效率。
进一步的，在不同实施方式中，其中所述带通带反层40可以为膜层结构。具体可以采用压合叠层模式制备，或者采用无机材料通过镀膜工艺制备于膜片基材，或者直接制备于所述平坦层的表面。
其中，所述带通带反层40是采用波动光学的折射、干涉原理，因而其透反效果依赖于具体的光程，会依赖于光线的入射角度，因而其透反特性会呈现一定的随角度偏移现象，具体的会随着角度的增加而呈现蓝移现象。
进一步的，本发明涉及的所述薄面光源显示模组，是采用广光形LED 22结合所述带通带反层40的设计。其中所述带通带反层40在膜层设计上为在所述LED颗粒照射光进入其的入射角度（即所述LED颗粒的照射光与所述带通带反层表面所在平面的夹角）为θ时，其对所述LED颗粒的照射光具有最优的透过率与反射率；在角度小于θ时，整体透过率随着角度的减小呈现红移特征；在角度大于θ时，整体透过率随着角度的增加而呈现蓝移特征，结合所述广光形LED 22的发光特性，从而可以严格匹配所述LED 22的最大光强角度与所述带通带反层的最佳循环回光角度，达成高亮度效率设计。
进一步的，其中所述荧光层50可以是以膜片的形式存在。在一个制备的具体实施方式中，所述荧光层50是直接通过涂布的方式热压固定于金属线栅层表面。具体的，所述荧光层50包含荧光粉颗粒和散射粒子，或者包含量子点粒子等，具体可随需要而定，并无限定。
本发明涉及的一种面光源显示模组，通过采用由广光形的LED颗粒组成LED阵列，实现了大pitch设计；同时由于采用的所述LED的发光特性，使得其还能在使用相对少颗的LED或者在相同LED颗数的条件下，实现低混光距离与较薄模组厚度的功效。
进一步的，通过在LED阵列层与颜色转换层之间增加带通带反层以提升红绿光波段的反射率，其中所述带通带反层的透过率与反射率在所述广光形的LED光通量最大的角度达成最大值，在角度小于所述最大角度时整体频谱呈现红移特征，在角度大于所述角度时整体频谱呈现蓝移特征，上述特性提升了广光形LED的回光效率，从而实现了本发明涉及的高效、超薄面光源显示模组。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种面光源显示模组，其包括基板和设置在所述基板上的LED阵列，其中所述LED阵列上布置有多个LED颗粒；
    其中所述LED颗粒所发出的光形为广光形，其中心0°的光强分布在30~50坎德拉，在偏离中心极角为θ时的光强分布在50~120坎德拉，其中θ∈[30,80]。
  2. 根据权利要求1所述的一种面光源显示模组，其中所述LED阵列中的LED颗粒包括无封装倒装芯片式LED，其中所述LED颗粒采用倒装芯片共面阴阳极结构，并通过密集周期阵列式排布。
  3. 根据权利要求1所述的一种面光源显示模组，其中所述LED阵列中的LED颗粒的尺寸为100-600μm，相邻LED颗粒之间的间距为100-1000μm。
  4. 根据权利要求1所述的一种面光源显示模组，其中所述LED阵列上设置有平坦层，用以填平所述LED阵列中相邻LED颗粒间存有的间隙；其中所述平坦层采用的材质在380-780nm可见光波段的吸收率小于10%。
  5. 根据权利要求1所述的一种面光源显示模组，其中所述平坦层上设置有带通带反层、荧光层、扩散层和增亮层，其中所述带通带反层能够透过蓝光波段的光子并且反射绿光与红光波段光子。
  6. 根据权利要求5所述的一种面光源显示模组，其中所述带通带反层为膜层结构，其在入射光的入射角度为所述θ时具有最优的透过率与反射率；在角度小于θ时，整体透过率随着角度的减小呈现红移特征；在角度大于θ时，整体透过率随着角度的增加而呈现蓝移特征。
  7. 根据权利要求6所述的一种面光源显示模组，其中所述带通带反层的膜层结构是直接制备于所述平坦层的表面上。
  8. 根据权利要求6所述的一种面光源显示模组，其中所述带通带反层的膜层结构是采用压合叠层模式制备或是以无机材料通过镀膜工艺制备于膜片基材上获得。
  9. 根据权利要求5所述的一种面光源显示模组，其中所述荧光层是以膜片的形式存在，其内包含荧光粉颗粒、散射粒子以及量子点粒子中的至少一种。
  10. 根据权利要求1所述的一种面光源显示模组，其中所述基板包括FPC基板、PCB板中的一种。
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