WO2020023764A1 - Dispositif opto-acoustique avec capteur de température intégré - Google Patents

Dispositif opto-acoustique avec capteur de température intégré Download PDF

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Publication number
WO2020023764A1
WO2020023764A1 PCT/US2019/043463 US2019043463W WO2020023764A1 WO 2020023764 A1 WO2020023764 A1 WO 2020023764A1 US 2019043463 W US2019043463 W US 2019043463W WO 2020023764 A1 WO2020023764 A1 WO 2020023764A1
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WO
WIPO (PCT)
Prior art keywords
acousto
temperature sensor
piezo
electrode
transducer
Prior art date
Application number
PCT/US2019/043463
Other languages
English (en)
Inventor
James Brookhyser
Jerry BIEHLER
Kurt EATON
Original Assignee
Electro Scientific Industries, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scientific Industries, Inc. filed Critical Electro Scientific Industries, Inc.
Publication of WO2020023764A1 publication Critical patent/WO2020023764A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/33—Acousto-optical deflection devices

Definitions

  • AODs Acousto-optic (AO) device
  • AODs can be used to steer laser beams for industrial machining and other applications.
  • AODs are driven with electrical power that gets converted to acoustic power within the device by means of a transducer.
  • the transducers can be
  • AOD optical adsorption adsorption adsorption
  • thermocouples are used as temperature sensors, but they’re bulky and they tend to give faulty readings when they’re in a high power RF environment (i.e., as is often present in and around the AOD). It can also be difficult to use non-contact infra-red (IR) temperature sensors because the object having the temperature to be measured (i.e., the electrode of the transducer) is highly reflective to the thermal IR signals that the IR temperature sensors use to operate.
  • IR non-contact infra-red
  • One embodiment of the present invention can be generally characterized as an acousto- optical device that includes an acousto-optical medium; and a transducer attached to the acousto- optical medium.
  • the transducer can include a piezo-electric material having a first surface and a second surface opposite the first surface; a first electrode interposed between the first surface of the piezo-electric material and the acousto-optical medium; and a temperature sensor attached to the second surface of the piezo-electric material.
  • the temperature sensor is operative to sense a temperature of the transducer.
  • Patent Application Page 1 of 15 E276-W01 Another embodiment of the present invention can be generally characterized as a device that includes an acousto-optical medium; a transducer attached to the acousto-optical medium; and a non-contact temperature sensor.
  • the transducer can include a piezo-electric material having a first surface and a second surface opposite the first surface; a first electrode interposed between the first surface of the piezo-electric material and the acousto-optical medium; and a second electrode attached to the second surface of the piezo-electric material.
  • the non-contact temperature sensor can be arranged such that at least a portion of the transducer is within a field of view of the non-contact temperature sensor. In this embodiment, the non-contact temperature sensor is operative to sense a temperature of the portion of the transducer within the field of view thereof.
  • Yet another embodiment of the present invention can be generally characterized as an acousto-optical device that includes an acousto-optical medium; and a transducer attached to the acousto-optical medium.
  • the transducer can include a piezo-electric material having a first surface and a second surface opposite the first surface; a first electrode interposed between the first surface of the piezo-electric material and the acousto-optical medium; and a second electrode attached to the second surface of the piezo-electric material, wherein at least a portion of the second electrode is patterned into a resistive temperature device (RTD).
  • RTD resistive temperature device
  • FIG. 1 schematically illustrates an acousto-optic deflector (AOD) and associated circuitry for driving the AOD.
  • AOD acousto-optic deflector
  • FIGS. 2 and 3 illustrate partial perspective views of exemplary configurations in which the transducer shown in FIG. 1 may be provided, according to some embodiments.
  • FIG. 4, 5 and 6 schematically illustrate temperature sensors, according to various embodiments, for sensing the temperature of the transducer shown in FIG. 1 and 3.
  • Patent Application Page 2 of 15 E276-W01 throughout.
  • the same or similar numbers may be described with reference to other drawings even if they are neither mentioned nor described in the corresponding drawing. Also, even elements that are not denoted by reference numbers may be described with reference to other drawings.
  • a range of values when recited, includes both the upper and lower limits of the range, as well as any sub-ranges therebetween.
  • terms such as“first,” “second,” etc. are only used to distinguish one element from another. For example, one node could be termed a“first node” and similarly, another node could be termed a“second node”, or vice versa.
  • the term“about,”“thereabout,” etc. means that amounts, sizes, formulations, parameters, and other quantities and characteristics are not and need not be exact, but may be approximate and/or larger or smaller, as desired, reflecting tolerances, conversion factors, rounding off, measurement error and the like, and other factors known to those of skill in the art.
  • Spatially relative terms such as“below,”“beneath,”“lower,”“above,” and“upper,” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature, as illustrated in the FIGS. It should be recognized that the spatially relative terms are intended to encompass different orientations in addition to the orientation depicted in the FIGS.
  • an object in the FIGS is turned over, elements described as“below” or“beneath” other elements or features would then be oriented“above” the other elements or features.
  • the exemplary term“below” can encompass both an orientation of above and below.
  • An object may be otherwise oriented (e.g.,
  • Patent Application Page 3 of 15 E276-W01 rotated 90 degrees or at other orientations and the spatially relative descriptors used herein may be interpreted accordingly.
  • FIG. 1 schematically illustrates an acousto-optic deflector (AOD) and associated circuitry for driving the AOD.
  • the AOD (identified at 100) includes an acousto-optic (AO) medium 102 and a transducer 104 attached to one side (e.g., a“first side l02a”) of the AO medium 102.
  • AO acousto-optic
  • the AO medium 102 can be formed of a material such as crystalline germanium (Ge), gallium arsenide (GaAs), wulfenite (PbMo0 4 ), tellurium dioxide (Te0 2 ), crystalline quartz, glassy Si0 2 , arsenic trisulfide (As 2 S 3 ), lithium niobate (LiNb0 3 ), or the like or any combination thereof.
  • the AOD 100 can also include an absorber 106 attached to a second side of the AO medium 102, which is opposite to the first side l02a of the AO medium 102.
  • AODs utilize diffraction effects caused by one or more acoustic waves propagating through the AO medium 102 (i.e., along a“diffraction axis” of the AOD 100) to diffract an incident optical wave (i.e., an incident beam of laser energy 1 lOa) contemporaneously propagating through the AO medium 102 (i.e., along an“optical axis” within the AOD 100).
  • Diffracting the incident beam of laser energy 1 lOa produces a diffraction pattern that typically includes zeroth- and first-order diffraction peaks, and may also include other higher-order diffraction peaks (e.g., second-order, third-order, etc.).
  • the portion of the diffracted beam of laser energy in the zeroth-order diffraction peak is referred to as a“zeroth-order” beam
  • the portion of the diffracted beam of laser energy in the first-order diffraction peak is referred to as a“first-order” beam
  • the zeroth-order beam and other diffracted-order beams propagate along different beam paths upon exiting the AO medium 102 (e.g., through an optical output side of the AO medium 102).
  • the zeroth-order beam (illustrated in FIG. 1 at 1 lOb) propagates
  • Patent Application Page 4 of 15 E276-W01 along a zeroth-order beam path the first-order beam (illustrated in FIG. 1 at 1 lOc) propagates along a first-order beam path, and so on.
  • Acoustic waves are typically launched into the AO medium 102 by applying an RF drive signal to the transducer 104.
  • Characteristics of the RF drive signal e.g., amplitude, frequency, phase, etc.
  • the frequency of the applied RF drive signal will determine the angle, Q, to which the first order beam 1 lOc is deflected.
  • Q can be calculated as follows:
  • l is the optical wavelength of beam of laser energy, /is the frequency of the applied RF drive signal, and v is he velocity of the acoustic wave in the AO medium 102.
  • additional components such as an RF synthesizer 114, an RF amplifier 116 and impedance matching circuitry 118, are provided.
  • the RF synthesizer 114 generates and outputs an RF signal having a frequency corresponding to a control signal output by the controller 112.
  • the RF amplifier 116 amplifies the RF signals output by the RF synthesizer 114 to thereby produce the aforementioned RF drive signal, which is applied to the transducer 104 via the impedance matching circuitry 118 (e.g., through a plurality of wires 120, as is known in the art). Communication between the controller 112 and the RF synthesizer is facilitated by the communication interface 122.
  • the transducer 104 of the AOD 100 includes a piezo-electric crystal interposed between two electrodes.
  • One electrode of the transducer 104 e.g., a“bottom electrode” is thus interposed between one surface (e.g., a“first surface”) of the piezo-electric crystal and the first side l02a of the AO medium 102 and another electrode of the transducer 104 (e.g., a“top electrode”) is provided on another surface (e.g., a“second surface, opposite the first surface) of the piezo-electric crystal.
  • Each electrode of the transducer 104 is typically formed of multiple layers, wherein adjacent layers differ from one another, mainly by the type of metal, although non-metallic layers can also be used.
  • the piezo-electric crystal is typically rectangular in shape, and relatively thin (i.e., in comparison to its length and width).
  • the bottom and top electrodes can be formed of one or more metal layers in any suitable manner known in the art (e.g., chemical vapor deposition, sputtering, atomic-layer deposition, etc.).
  • the top electrode can be
  • Patent Application Page 5 of 15 E276-W01 formed by patterning metal layer(s) (e.g., using a photolithography process, etc.) that have been deposited or otherwise formed on the piezo-electric crystal.
  • FIGS. 2 and 3 illustrate partial perspective views of exemplary configurations in which the transducer 104 may be provided, according to some embodiments.
  • the transducer 104 includes a bottom electrode 200, a piezo-electric crystal 202 and a top electrode 204.
  • the bottom electrode 200 and the top electrode 204 electrode of the transducer 104 is typically formed of multiple layers, wherein adjacent layers differ from one another, mainly by the type of metal (e.g. gold, platinum, silver, copper, or lead), although non-metallic layers can also be used.
  • metal e.g. gold, platinum, silver, copper, or lead
  • the bottom electrode 200 can be formed as a multi-layer structure having a plurality of layers (e.g., layers 200a, 200b and 200c), wherein adjacent ones of the layers are formed of different materials, as described above.
  • the top electrode 204 can be formed as a multi-layer structure having a plurality of layers (e.g., layers 204a, 204b,
  • the shape of the bottom electrode 200 generally corresponds to that of the first surface of the piezo-electric crystal 202, but is slightly smaller in size than the first surface of the piezo-electric crystal 202.
  • a portion of the bottom electrode 200 can be exposed by the piezo-electric crystal 202.
  • the surface of the portion of the bottom electrode 200 exposed by the piezo-electric crystal 202 is indicated generally at 300, and is also referred to herein as the“exposed bottom electrode surface 300.”
  • the top electrode 204 is typically smaller than the second surface piezo-electric crystal 202 and has a different shape from that of the second surface of the piezo-electric crystal 202.
  • the top electrode 204 can have a trapezoidal or hexagonal shape.
  • the portion of the second surface of the piezo-electrical crystal 202 can be exposed by the top electrode 204.
  • the portion of the second surface of the piezo-electrical crystal 202 is indicated generally at 302, and is also referred to herein as the“exposed piezo-electrical crystal surface 302.”
  • the impedance matching circuitry 118 may be electrically connected to the bottom electrode 200 via one or more wires 120 bonded to the exposed bottom electrode surface 300.
  • the impedance matching circuitry 118 may be electrically connected to the top electrode 204 via one or more wires 120 bonded to an exterior surface 304 of the top electrode 204.
  • FIG. 1 the AOD 100 is illustrated as being provided with only a single transducer 104. It should be appreciated, however, that the AOD 100 may be provided with multiple transducers, such as transducer 104. Also, although FIGS. 1 to 3 illustrate the transducer 104 as including only a single piece of piezo-electric crystal 202 having only one top electrode 204 attached thereto, it should be appreciated that the transducer 104 may be provided with multiple top electrodes 204 attached to a common piece of piezo-electric crystal 202, as is known in the art.
  • the transducer 104 can be catastrophically damaged if it overheats, which can happen easily if the electrical power required to achieve the desired beam scanning performance is high. Accordingly, some embodiments of the present invention - discussed in greater detail below - are directed to temperature sensors for sensing, detecting or otherwise monitoring the temperature of the transducer 104.
  • the temperature sensor can be characterized as a“contact-type” temperature sensor, or as a“non-contact-type” temperature sensor.
  • a contact-type temperature sensor is attached (e.g., directly attached) to the piezo-electric crystal 202, is attached (e.g., directly attached) to the top electrode 204, is integrally formed with the top electrode 204, or any combination thereof.
  • a non-contact-type temperature sensor is not attached to the piezo-electric crystal 202 or to the top electrode 204. Rather, the non-contact-type temperature sensor is located remotely from the piezo-electric crystal 202 and/or the top electrode 204.
  • the AOD 100 includes a temperature sensor attached to the piezo electric crystal 202.
  • a temperature sensor 400 may be attached to the exposed piezo-electrical crystal surface 302 of the piezo-electric crystal 202.
  • FIG. 4 illustrates only one temperature sensor 400, it will be appreciated that multiple temperature sensors 400 can be provided (e.g., at different areas of the exposed piezo-electrical crystal surface 302).
  • the temperature sensor 400 is provided as surface-type resistive temperature device (RTD).
  • the RTD can, for example, be formed from a resistive material such as platinum, nickel, copper, etc., and be formed by a process that involves depositing the resistive material onto the exposed portion of the second surface of the piezo electric crystal (e.g., by sputter deposition) followed by patterning the deposited resistive material (e.g., by etching a meander pattern into the deposited material, etc.).
  • a resistive material such as platinum, nickel, copper, etc.
  • laser trimming is applied to the meander pattern to tune the RTD to a desired nominal resistance value.
  • Lead wires (not shown) can be bonded to pads at the sides of the meander pattern, and
  • Patent Application Page 7 of 15 E276-W01 sensor circuitry (also not shown) coupled to the lead wires can be provided to detect, sense, convert or otherwise interpret changes in resistivity of the RTD to monitor temperature (in any suitable manner known in the art) at the site where the RTD is attached to the exposed portion.
  • the temperature sensor may be provided as a thermistor (e.g., a negative temperature coefficient (NTC) thermistor, a positive temperature coefficient (PTC) thermistor, or the like or any combination thereof) attached to the piezo-electric crystal 202 (e.g., at the exposed piezo-electrical crystal surface 302).
  • the thermistor may be provided as an addition to, or as an alternative to, the RTD.
  • one or more or all layers of the top electrode 204 are patterned to form an RTD.
  • one or more or all of layers of the top electrode 204 e.g., any of layers 204a, 204b, 204c, 204d, or any combination thereof
  • a resistive material such as platinum, nickel, copper, etc.
  • Lead wires can be bonded to the sides of the meander pattern (e.g., at sides 500 and 502) of the RTD, and sensor circuitry (also not shown) coupled to the lead wires can be provided to detect, sense, convert or otherwise interpret changes in resistivity of the top electrode 204 to monitor temperature (in any suitable manner known in the art).
  • the top electrode 204 is provided as a plurality of electrode strips 600 and a plurality of connecting members 602.
  • Each of the plurality of electrode strips 600 may be formed as a multi-layer structure having a plurality of layers, for example, provided and formed as discussed above with respect to the multi-layer structure of the top electrode 204.
  • the connecting members 602 electrically connect multiple electrode strips 600 to each other.
  • the connecting members 602 have an electrical resistivity that is less than or equal to the electrical resistivity of each of the electrode strips 600.
  • the connecting members 602 are formed as one or more wires, patterned metallic structures, or the like or any combination thereof.
  • each connecting member 602 can be connected to an electrode strip 600 at any suitable or beneficial position of connecting member 602.
  • Lead wires can be bonded to electrode strips 600 such as electrode strips 600a and 600b, and sensor circuitry (also not shown) coupled to the lead wires can be provided to detect, sense, convert or
  • Patent Application Page 8 of 15 E276-W01 otherwise interpret changes in resistivity of the top electrode 204 to monitor temperature (in any suitable manner known in the art).
  • each of the electrode strips 600 has an exterior surface 604, which functions similarly as the exterior surface 304. Accordingly, the exterior surfaces 604 of all electrode strips 600 can be considered as equivalent to the exterior surface 304 of the top electrode 204 as shown in FIGS. 2 to 5. Accordingly, the impedance matching circuitry 118 may be electrically connected to the top electrode 204 via one or more wires 120 bonded to an exterior surface 604 of one or more electrode strips 600.
  • the temperature sensor is provided as one or more non-contact- type temperature sensors.
  • non-contact-type temperature sensors that may be used include an infra-red (IR) sensor, a thermoreflectance imaging system, or the like or any combination thereof.
  • IR infra-red
  • thermoreflectance imaging systems discern the temperature of a surface based on a change in optical reflectivity of the surface as a function of the temperature at the surface.
  • a non-contact-type temperature sensor can be arranged (e.g., fixed to a frame, etc.) such that at least a portion of the exposed piezo-electrical crystal surface 302, at least a portion of the exterior surface 304 of the top electrode 204, or a combination thereof, is within a sensing range or field (e.g., a“field of view”) of the non-contact-type temperature sensor.
  • the non-contact- type temperature sensor can be coupled to sensor circuitry (not shown) to detect, sense, convert or otherwise interpret signals output from the non-contact-type temperature sensor to monitor temperature (in any suitable manner known in the art) of the surface that is within the sensing range of the non-contact-type temperature sensor.
  • the exposed piezo-electrical crystal surface 302 can, optionally, be coated with a material possessing high emissivity. Also optionally, optics (not shown) can be provided to isolate the measurement of IR radiation by the IR sensor to within a small region of the exposed piezo-electrical crystal surface 302, rather than detecting the temperature of the surrounding materials (e.g., which may include a portion of the top electrode 204).
  • the top electrode 204 will typically have a very low IR emissivity, and so sensing the temperature of the top electrode 204 with an IR sensor would result in a measurement of the temperature of whatever object is reflected by the top electrode 204. Accordingly, in an embodiment in which the non-contact-type temperature sensor is provided as an IR sensor, the exterior surface 304 of the top electrode 204 may be coated with a high emissivity material to measure the temperature of the top electrode 204 more reliably.
  • acoustic waves generated within the piezo-electric crystal 202 can be transmitted through the top electrode 204 and into the high emissivity material coating on the exterior surface 304, and possibly be absorbed in the high emissivity material coating.
  • Such absorption has the potential to exacerbate existing heating problems within the AOD 100 or distort sound waves inside the piezo-electric crystal 202 to degrade the diffraction efficiency of the AOD 100.
  • coating the exterior surface 304 of the top electrode 204 with the high-emissivity material may be suitable or desirable in some, but not all, situations.
  • Patent Application Page 10 of 15 E276-W01 any sentence, paragraph, example or embodiment can be combined with subject matter of some or all of the other sentences, paragraphs, examples or embodiments, except where such combinations are mutually exclusive.
  • the scope of the present invention should, therefore, be determined by the following claims, with equivalents of the claims to be included therein.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

Un dispositif opto-acoustique comprend un milieu opto-acoustique, un transducteur fixé au milieu opto-acoustique et un capteur de température agencé et configuré pour détecter une température du transducteur.
PCT/US2019/043463 2018-07-27 2019-07-25 Dispositif opto-acoustique avec capteur de température intégré WO2020023764A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862711308P 2018-07-27 2018-07-27
US62/711,308 2018-07-27
US201862718236P 2018-08-13 2018-08-13
US62/718,236 2018-08-13

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WO2020023764A1 true WO2020023764A1 (fr) 2020-01-30

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097320A (ja) * 1983-11-01 1985-05-31 Agency Of Ind Science & Technol 音響光学変調器
US20110304900A1 (en) * 2010-06-09 2011-12-15 Leica Microsystems Cms Gmbh Acousto-optical system, microscope and method of use of the acousto-optical system
KR20120119838A (ko) * 2011-04-22 2012-10-31 주식회사 엘티에스 음향광학변조기의 온도 제어장치
CN103028204A (zh) * 2011-10-09 2013-04-10 北京汇福康医疗技术有限公司 超声换能器的温度的监控方法及装置
US20160157732A1 (en) * 2013-08-07 2016-06-09 Bio Echo Net Inc. Infrared thermometer
US20160221822A1 (en) * 2015-02-03 2016-08-04 Infineon Technologies Ag System and Method for an Integrated Transducer and Temperature Sensor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097320A (ja) * 1983-11-01 1985-05-31 Agency Of Ind Science & Technol 音響光学変調器
US20110304900A1 (en) * 2010-06-09 2011-12-15 Leica Microsystems Cms Gmbh Acousto-optical system, microscope and method of use of the acousto-optical system
KR20120119838A (ko) * 2011-04-22 2012-10-31 주식회사 엘티에스 음향광학변조기의 온도 제어장치
CN103028204A (zh) * 2011-10-09 2013-04-10 北京汇福康医疗技术有限公司 超声换能器的温度的监控方法及装置
US20160157732A1 (en) * 2013-08-07 2016-06-09 Bio Echo Net Inc. Infrared thermometer
US20160221822A1 (en) * 2015-02-03 2016-08-04 Infineon Technologies Ag System and Method for an Integrated Transducer and Temperature Sensor

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