WO2020013119A1 - Solution chimique, récipient de solution chimique, kit et procédé de production de puce semi-conductrice - Google Patents

Solution chimique, récipient de solution chimique, kit et procédé de production de puce semi-conductrice Download PDF

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Publication number
WO2020013119A1
WO2020013119A1 PCT/JP2019/026964 JP2019026964W WO2020013119A1 WO 2020013119 A1 WO2020013119 A1 WO 2020013119A1 JP 2019026964 W JP2019026964 W JP 2019026964W WO 2020013119 A1 WO2020013119 A1 WO 2020013119A1
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chemical solution
group
substituent
organic compound
solution according
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PCT/JP2019/026964
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English (en)
Japanese (ja)
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上村　哲也
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富士フイルム株式会社
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Priority to JP2020530169A priority Critical patent/JPWO2020013119A1/ja
Publication of WO2020013119A1 publication Critical patent/WO2020013119A1/fr
Priority to JP2022138186A priority patent/JP7513670B2/ja

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a drug solution, a drug solution container, a kit, and a method for manufacturing a semiconductor chip.
  • ultraviolet light As the exposure light source, ultraviolet light, a KrF excimer laser, and an ArF excimer laser, which have been conventionally used, are replaced with a shorter wavelength.
  • a pattern formation using a certain EUV (extreme ultraviolet) has been attempted. With the miniaturization of patterns to be formed, the above-mentioned chemicals used in this process are required to have further defect suppressing properties.
  • Patent Literature 1 discloses, as a conventional chemical solution used for pattern formation, a method of manufacturing an organic treatment solution for patterning a chemically amplified resist film capable of reducing generation of particles in a pattern formation technique (paragraph [0010]). )) Is disclosed.
  • the present inventors have studied the organic processing solution (chemical solution) for patterning manufactured by the above manufacturing method, and have found room for improvement in defect suppression. More specifically, when a chemical solution is used as a pre-wet solution or a rinse solution, there is room for improvement in controlling defects such as metal residue defects, particulate organic residue defects, and stain residue defects. Was. Further, when a chemical solution is used as a pattern developing solution, there is room for improvement in suppressing defects such as defective development defects, residue defects, and uniformity defects.
  • An object of the present invention is to provide a chemical solution having excellent defect suppression properties as described above. Another object of the present invention is to provide a drug solution container, a kit, and a method for manufacturing a semiconductor chip.
  • the present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, have found that the above-mentioned problems can be solved by the following configuration.
  • a chemical solution containing an organic solvent Containing at least one first organic compound selected from the group consisting of compounds represented by the following general formulas (I) to (III), A drug solution, wherein the total content of the first organic compound is 0.01 to 100000 mass ppt based on the total weight of the drug solution.
  • the drug solution according to (1) further comprising at least one second organic compound selected from the group consisting of compounds represented by the following general formulas (IV) to (VII).
  • the chemical solution according to (2) wherein at least two or more of the first organic compound and the second organic compound are contained.
  • the drug solution according to (3), wherein at least one of the two or more compounds has a ClogP value of 5 or more.
  • the ratio of the content of the compound represented by the general formula (VI) to the total content of the first organic compound and the second organic compound other than the compound represented by the general formula (VI) is from 0.01 to The drug solution according to (5), which is 1.
  • the composition further contains a metal component, The chemical solution according to any one of (1) to (6), wherein the content of the metal component is 0.1 to 500 mass ppt based on the total mass of the chemical solution.
  • the chemical solution according to (7), wherein the ratio of the total content of the first organic compound to the content of the metal component is 0.01 to 10,000.
  • the drug solution according to (2) further comprising a metal component.
  • the chemical solution according to (9), wherein the ratio of the total content of the first organic compound and the second organic compound to the content of the metal component is 0.01 to 50,000.
  • the chemical solution according to (9) or (10), wherein the metal component contains metal particles and metal ions.
  • the chemical solution according to (11), wherein the ratio of the total content of the first organic compound and the second organic compound to the content of the metal particles is 0.01 to 50,000.
  • (13) The chemical solution according to (11) or (12), wherein the ratio of the total content of the first organic compound and the second organic compound to the content of the metal ion is 0.03 to 30,000.
  • the organic solvent is propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, methyl methoxypropionate, cyclopentanone, cyclohexanone, ⁇ -butyrolactone, diisoamyl Ether, butyl acetate, isoamyl acetate, isopropanol, 4-methyl-2-pentanol, dimethyl sulfoxide, N-methylpyrrolidone, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, propylene carbonate, sulfolane, cycloheptanone , 2-heptanone, butyl butyrate, isobutyl isobutyrate, undecane, pentyl propionate, pro Isopentyl onate, ethyl
  • a container, and the drug solution according to any one of (1) to (15) contained in the container A liquid medicine container in which a liquid contact portion that comes into contact with the liquid medicine in the container is made of electropolished stainless steel or fluororesin.
  • the chemical solution excellent in defect suppression property can be provided. Further, according to the present invention, it is possible to provide a chemical solution container, a kit, and a method of manufacturing a semiconductor chip.
  • a numerical range represented by using “to” means a range including numerical values described before and after “to” as a lower limit and an upper limit.
  • ppm means “parts-per-million (10 ⁇ 6 )”
  • ppb means “parts-per-billion (10 ⁇ 9 )”
  • ppt means “Parts-per-trillion (10 ⁇ 12 )” means “parts-per-quadrillion (10 ⁇ 15 )”.
  • the notation that does not indicate substitution or unsubstitution means a group containing a substituent together with a group having no substituent within a range not impairing the effect of the present invention.
  • the “hydrocarbon group” includes not only a hydrocarbon group having no substituent (unsubstituted hydrocarbon group) but also a hydrocarbon group having a substituent (substituted hydrocarbon group). This is the same for each compound.
  • “radiation” means, for example, far ultraviolet rays, extreme ultraviolet (EUV), X-rays, or electron beams.
  • light means actinic rays or radiation.
  • exposure in the present invention includes not only exposure with far ultraviolet rays, X-rays or EUV, but also exposure with particle beams such as electron beams or ion beams.
  • the mechanism by which the above-mentioned problem is solved by the chemical solution of the present invention is not always clear, but the present inventors speculate on the mechanism as follows. The following mechanism is speculation, and even if the effect of the present invention can be obtained by a different mechanism, it is included in the scope of the present invention.
  • the chemical solution contains a trace amount of impurities that are mixed in during storage and transport through pipes, and such impurities tend to cause various defects.
  • the various defects are, for example, defects that occur when a chemical solution is applied to a semiconductor device manufacturing process.
  • More specific examples are metal residue defects, particulate organic residue defects, and spot-like residue defects when a chemical solution is used as a pre-wet solution or a rinsing solution, and the like, and the chemical solution is used as a pattern developing solution.
  • Defective development defects, residue defects, and uniformity defects, etc. when used, and when a chemical solution is used as a pipe cleaning solution, then the pre-wet liquid, rinsing liquid, developer, etc. And the above-mentioned defects that occur when the device is used after being transferred.
  • the chemical solution of the present invention contains the first organic compound described later in a predetermined amount or more, it exhibits a behavior like a saturated solution, and furthermore, impurities (especially, impurities which are likely to cause defects) are hardly mixed into the chemical solution.
  • impurities especially, impurities which are likely to cause defects
  • the present inventors speculate that, based on such a mechanism, in various processes using the chemical solution of the present invention, it was possible to suppress the occurrence of defects finally obtained.
  • the chemical solution of the present invention contains an organic solvent and at least one first organic compound selected from the group consisting of compounds represented by the following general formulas (I) to (III).
  • the total content of organic compounds is from 0.1 to 100,000 mass ppt, based on the total mass of the drug solution.
  • the chemical solution of the present invention contains an organic solvent.
  • an organic solvent is intended to mean a liquid organic compound contained in a content exceeding 10,000 ppm by mass per component with respect to the total mass of the chemical solution. That is, in this specification, a liquid organic compound contained in an amount exceeding 10,000 ppm by mass with respect to the total mass of the chemical solution corresponds to an organic solvent.
  • the term “liquid” means a liquid at 25 ° C. and atmospheric pressure.
  • the content of the organic solvent in the chemical solution is not particularly limited, but is preferably 98.00% by mass or more, more preferably more than 99.00% by mass, and further preferably 99.90% by mass or more based on the total mass of the chemical solution. More preferably, it is more than 99.95% by mass. The upper limit is less than 100% by mass.
  • One organic solvent may be used alone, or two or more organic solvents may be used. When two or more organic solvents are used, the total content is preferably within the above range.
  • the type of the organic solvent is not particularly limited, and a known organic solvent can be used.
  • the organic solvent include alkylene glycol monoalkyl ether carboxylate, alkylene glycol monoalkyl ether, alkyl lactate, alkyl alkoxypropionate, cyclic lactone (preferably having 4 to 10 carbon atoms), and monoketone compound optionally having a ring. (Preferably having 4 to 10 carbon atoms), alkylene carbonate, alkyl alkoxyacetate, alkyl pyruvate, dialkyl sulfoxide, cyclic sulfone, dialkyl ether, monohydric alcohol, glycol, alkyl acetate, and N-alkylpyrrolidone. .
  • organic solvent examples include propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone (CHN), ethyl lactate (EL), propylene carbonate (PC), isopropanol (IPA), and 4-methyl-2.
  • PGMEA propylene glycol monomethyl ether acetate
  • PGME propylene glycol monomethyl ether
  • CHN propylene glycol monomethyl ether
  • EL ethyl lactate
  • PC propylene carbonate
  • IPA isopropanol
  • MIBC -Pentanol
  • nBA butyl acetate
  • propylene glycol monoethyl ether propylene glycol monopropyl ether, methyl methoxypropionate, cyclopentanone, ⁇ -butyrolactone, diisoamyl ether, isoamyl acetate, dimethyl sulfoxide, N- Methylpyrrolidone, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, sulfolane, cycloheptanone, Heptanone, butyl butyrate, isobutyl isobutyrate, undecane, pentyl propionate, isopentyl propionate, ethylcyclohexane, mesitylene, decane, 3,7-dimethyl-3-octanol, 2-ethyl-1-hexanol, 1-octanol, 2-
  • the volume resistivity of the organic solvent is not particularly limited, but is preferably 500,000,000 ⁇ m or more.
  • the upper limit is not particularly limited, but is preferably 5,000,000 ⁇ m or less.
  • the volume resistivity of the organic solvent can be measured using, for example, a volume resistance meter SME-8310 and a super insulation meter SM-8220 manufactured by Hioki Electric Co., Ltd.
  • the organic solvent preferably has, for example, a distance of the Hansen solubility parameter for eicosene of 3 to 20 MPa 0.5 (more preferably, 5 to 20 MPa 0.5 ).
  • a distance of the Hansen solubility parameter for eicosene of 3 to 20 MPa 0.5 (more preferably, 5 to 20 MPa 0.5 ).
  • the weighted average value of the Hansen solubility parameter based on the molar ratio of the content of each organic solvent satisfies the range of the Hansen solubility parameter.
  • the organic solvent is substantially only the organic solvent that substantially satisfies the range of the Hansen solubility parameter from the viewpoint of more excellent defect suppression properties of the chemical solution.
  • An organic solvent is substantially only an organic solvent that satisfies the range of the Hansen solubility parameter means that the content of the organic solvent that satisfies the range of the Hansen solubility parameter is 99% by mass or more based on the total mass of the organic solvent. (Preferably 99.9% by mass or more).
  • the organic solvent is a mixed solvent containing both an organic solvent satisfying the range of the Hansen solubility parameter and an organic solvent not satisfying the range of the Hansen solubility parameter.
  • the mixed solvent is used in an amount of 20 to 80% by mass (preferably 30 to 80% by mass) with respect to the total mass of the mixed solvent, from the viewpoint that the obtained chemical solution is more excellent in suppressing defects. 70% by mass), and preferably contains 20 to 80% by mass (preferably 30 to 70% by mass) of an organic solvent which does not satisfy the range of the Hansen solubility parameter with respect to the total mass of the mixed solvent.
  • the organic solvent that does not satisfy the range of the Hansen solubility parameter is predetermined.
  • the amount is out of the range (for example, 1% by mass or more and less than 20% by mass or more than 80% by mass with respect to the total mass of the mixed solvent)
  • the affinity of the chemical for the metal-based material and the organic-based material is improved It can be adjusted to an appropriate range, and it is considered that the effects of the present invention are more excellent.
  • the total content of the organic solvent satisfying the range of the Hansen solubility parameter and the organic solvent not satisfying the range of the Hansen solubility parameter is 99.0% by mass or more based on the total mass of the mixed solution. preferable.
  • the upper limit is not particularly limited, it is generally preferably 99.999999% by mass or less.
  • the distance of Hansen parameters for eicosene is, 0 MPa 0.5 or more 3MPa less than 0.5 (preferably 0 MPa 0.5 ultra 3MPa less than 0.5), or , More than 20 MPa 0.5 (preferably more than 20 MPa 0.5 and 50 MPa 0.5 or less).
  • the Hansen solubility parameter means a Hansen solubility parameter described in "Hansen Solubility Parameters: A Users Handbook, Second Edition” (page 1-310, CRC Press, published in 2007) and the like. That is, the Hansen solubility parameter expresses the solubility as a multidimensional vector (dispersion term ( ⁇ d), interdipole term ( ⁇ p), and hydrogen bond term ( ⁇ h)), and these three parameters are represented by Hansen space It is considered to be the coordinates of a point in a three-dimensional space called.
  • the distance of the Hansen solubility parameter is the distance between two compounds in the Hansen space, and the distance of the Hansen solubility parameter is obtained by the following equation.
  • the chemical solution contains at least one first organic compound selected from the group consisting of compounds represented by general formulas (I) to (III).
  • Y represents a benzene ring group which may be substituted by an alkyl group, or a group represented by the general formula (A).
  • * represents a bonding position.
  • R 1a represents an alkyl group which may have a substituent.
  • the alkyl group may contain a hetero atom (preferably an oxygen atom).
  • the alkyl group contains an oxygen atom, it is preferably contained in the form of -O- or -CO-. In other words, the alkyl group may contain -O- or -CO-.
  • the alkyl group for R 1a may be linear or branched, and may have a cyclic structure.
  • the alkyl group of R 1a preferably has 1 to 20 carbon atoms, more preferably 1 to 10.
  • the number of carbon atoms in the alkyl group of R 1a does not include the number of carbon atoms of the substituent which may be alkyl groups containing of R 1a contains.
  • the substituent which the alkyl group of R 1a may contain preferably contains an aromatic ring group (preferably a benzene ring group, which may further contain a substituent).
  • the substituent is more preferably an aromatic ester group.
  • R 1a each independently represents an alkyl group.
  • the alkyl group of R 1a preferably has 1 to 15 carbon atoms, more preferably 1 to 10.
  • the compound represented by the general formula (I) is exemplified.
  • R 2a to R 2h each independently represent an alkyl group which may have a substituent.
  • R 2b and R 2e may combine with each other to form a ring, and the group formed by combining R 2b and R 2e with each other is —O — (— Si (R 2i ) 2 —O— ) a - it is preferably.
  • a represents an integer of 1 or more.
  • the upper limit of a is not particularly limited, but is often 10 or less.
  • R 2i represents an alkyl group which may have a substituent.
  • a plurality of R 2i may be the same or different.
  • the alkyl group represented by R 2a to R 2i may be linear or branched, and may have a cyclic structure.
  • the alkyl group preferably has 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms. Note that the number of carbon atoms of the above alkyl group does not include the number of carbon atoms contained in the substituent which may be contained in the alkyl group.
  • the alkyl groups represented by R 2a to R 2i are each independently preferably an unsubstituted alkyl group, more preferably a methyl group. It is also preferred that one of R 2g and R 2h is an alkyl group containing a substituent.
  • the substituent is preferably a group containing one or more oxyalkylene groups (the alkylene group portion preferably has 2 to 4 carbon atoms, may be linear or branched, and may have a cyclic structure). .
  • the group containing one or more oxyalkylene groups may contain a hydroxyl group.
  • the compound represented by the general formula (II) is exemplified.
  • R 3a represents —N (R 3c ) R 3d or —SR 3e .
  • R 3c , R 3d and R 3e represent a hydrogen atom or a substituent.
  • R 3b represents -NH- or -S-.
  • R 3e include an aromatic thio group.
  • the aromatic thio group a group represented by —S—Ar (Ar: an aromatic ring group which may have a substituent) is preferable.
  • the aromatic ring group in the aromatic thio group may or may not contain a hetero atom (such as a sulfur atom, a nitrogen atom, and / or an oxygen atom), and preferably contains it. .
  • the aromatic ring group is preferably an aromatic heterocyclic group.
  • the aromatic ring group may be monocyclic or polycyclic, and is preferably polycyclic.
  • a benzothiazole ring group is preferable.
  • the compound represented by the general formula (III) is exemplified.
  • the boiling point of the first organic compound is not particularly limited, it is preferably 250 ° C. or higher, more preferably 380 ° C. or higher, since it is difficult to volatilize, forms an association with the metal component, and can further suppress the generation of defects derived from the metal component.
  • the upper limit is not particularly limited, but is often 450 ° C. or lower.
  • the above boiling point means the boiling point at 1 atm.
  • the molecular weight of the first organic compound is not particularly limited, but is preferably 300 or more in relation to the boiling point.
  • the upper limit is not particularly limited, but is often 1000 or less.
  • ClogP of the first organic compound is not particularly limited, but is preferably 5.0 or more, more preferably 8.0 to 26.0, and still more preferably 8.5 to 20.0.
  • the ClogP value is a value obtained by calculating a common logarithm logP of a partition coefficient P to 1-octanol and water.
  • Known methods and software can be used for calculating the ClogP value.
  • the present invention uses a ClogP program incorporated in ChemBioDraw Ultra 12.0 of Cambridge software.
  • the first organic compound acts as a hydrophobic compound in the chemical solution, acts with the metal component, and generates a defect derived from the metal component.
  • the number is preferably 3 or more, and more preferably 5 to 10 from the viewpoint that the occurrence of odor can be further suppressed.
  • the total content of the first organic compound is 0.01 to 100,000 mass ppt based on the total mass of the chemical solution, and the point that the defect suppression property of the chemical solution is more excellent (hereinafter simply referred to as “the point that the effect of the present invention is more excellent”) ), Preferably 80,000 mass ppt or less, more preferably 10,000 mass ppt or less, and even more preferably 2000 mass ppt or less.
  • the lower limit is not particularly limited, but is preferably 0.1 mass ppt or more, more preferably 1 mass ppt or more.
  • the first organic compound one type may be used alone, or two or more types may be used. Among them, it is preferable to use two or more kinds from the viewpoint that the effects of the present invention are more excellent.
  • the content of the first organic compound in the chemical solution can be measured using GCMS (gas chromatography mass spectrometry; gas chromatography mass spectrometry).
  • the chemical solution may contain components other than the above-described organic solvent and the first organic compound. Hereinafter, other components will be described in detail.
  • the chemical solution may contain at least one type of second organic compound selected from the group consisting of compounds represented by formulas (IV) to (VIII).
  • X represents a benzene ring group optionally having a substituent, a cyclohexene ring group optionally having a substituent, or a cycloalkyloxy group as a substituent.
  • the cyclohexane ring group may further contain another substituent.
  • a hydrocarbon group for example, an unsaturated hydrocarbon group which may contain at least one selected from the group consisting of a hydroxyl group and a carboxy group is exemplified.
  • Examples of the substituent which the benzene ring group may contain include an alkyl group, an alkoxy group and an arylcarbonyl group which may contain a substituent.
  • Examples of the substituent which the cyclohexene ring group may contain include, for example, an alkenyloxy group and a cyclohexene ring group which may contain a substituent.
  • the compound represented by the general formula (IV) includes a compound represented by the general formula (IV-1).
  • Formula (IV-1) (HO-Ar-L) 4 -C
  • Ar represents a benzene ring group which may have a substituent.
  • L represents a divalent linking group. Examples of the divalent linking group include an alkylene group which may contain an ester group.
  • R 5a represents an alkyl group which may have a substituent or a hydrogen atom.
  • R 5b and R 5c each independently represent a hydrogen atom, -AL-OR 5d , -CO-R 5e , or -CH (OH) -R 5f .
  • AL represents an optionally substituted alkylene group (preferably having 1 to 6 carbon atoms).
  • R 5d , R 5e , and R 5f each independently represent a substituent (preferably, an alkyl group which may further contain a substituent).
  • the alkyl groups which may have a substituent represented by R 5a , R 5d , R 5e , and R 5f may each independently be linear or branched, and have a cyclic structure. You may.
  • the alkyl group preferably has 1 to 50 carbon atoms, more preferably 1 to 20 carbon atoms. Note that the number of carbon atoms of the above alkyl group does not include the number of carbon atoms contained in the substituent which may be contained in the alkyl group. Examples of the substituent which the alkyl group may contain include a hydroxyl group, an alkyl ester group, and an alkylvinyl group (preferably, the alkyl group has 3 to 12 carbon atoms). When a plurality of R 5d are present, each of the plurality of R 5d may be the same or different. When a plurality of R 5e are present, each of the plurality of R 5e may be the same or different.
  • each of the plurality of R 5f may be the same or different.
  • Two combinations selected from the group consisting of a substituent which may be contained in the alkyl group represented by R 5a , R 5d , R 5e , and R 5f , two R 5d , and two R 5e Or two R 5f may be bonded to each other to form a ring.
  • Two combinations selected from the group consisting of a substituent which may be contained in the alkyl group represented by R 5a , R 5d , R 5e , and R 5f , two R 5d , and two R 5e Or a group formed by bonding two R 5f to each other is at least one selected from the group consisting of —O—, —NR 5g — (R 5g is a substituent), and —NHCO— It is preferable to contain the linking group of At least one of R 5a , R 5b and R 5c is other than a hydrogen atom.
  • Examples of the compound represented by the general formula (V) include a compound represented by the general formula (V-1).
  • L represents an alkylene group (preferably an alkylene group having 1 to 10 carbon atoms) which may have a substituent.
  • q represents 3 to 10 (preferably 4 to 6).
  • R 6a and R 6b each independently represent an alkyl group which may have a substituent.
  • the alkyl group may be linear or branched, and may have a cyclic structure.
  • the alkyl group preferably has 1 to 20 carbon atoms, and more preferably 2 to 10 carbon atoms. Note that the number of carbon atoms of the above alkyl group does not include the number of carbon atoms contained in the substituent which may be contained in the alkyl group.
  • an aromatic ring group (which may further contain a substituent, preferably a phenyl group) is preferable.
  • the compound represented by formula (VI) is exemplified.
  • R 7a to R 7c each independently represent a hydrogen atom, an alkyl group which may have a substituent, or a benzene ring group which may have a substituent.
  • R 7a to R 7c one or more (preferably two or more) alkyl groups which may have a substituent or a benzene ring group which may have a substituent are preferable.
  • the alkyl group may be linear or branched, and may have a cyclic structure.
  • the alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 5 carbon atoms.
  • the number of carbon atoms of the above alkyl group does not include the number of carbon atoms contained in the substituent which may be contained in the alkyl group.
  • an alkoxy group preferably having 2 to 6 carbon atoms
  • a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom
  • an alkyl group preferably having 2 to 10 carbon atoms
  • the compound represented by the general formula (VII) is exemplified.
  • the boiling point of the second organic compound is not particularly limited, it is preferably 250 ° C. or higher, more preferably 380 ° C. or higher, since it is difficult to volatilize, forms an association with the metal component, and can further suppress the occurrence of defects derived from the metal component.
  • the upper limit is not particularly limited, but is often 450 ° C. or lower.
  • the above boiling point means the boiling point at 1 atm.
  • the molecular weight of the second organic compound is not particularly limited, but is preferably 300 or more in relation to the boiling point.
  • the upper limit is not particularly limited, but is often 2000 or less.
  • CClogP of the second organic compound is not particularly limited, but is preferably 5.0 or more, more preferably 8.0 to 26.0, and still more preferably 8.5 to 20.0.
  • the second organic compound acts as a hydrophobic compound in the chemical solution, acts on the metal component, and generates a defect derived from the metal component.
  • the number is preferably 3 or more, and more preferably 5 to 10 from the viewpoint that the occurrence of odor can be further suppressed.
  • the total content of the second organic compound is not particularly limited, but is preferably 0.01 to 100000 mass ppt based on the total mass of the drug solution, in that the effect of the present invention is more excellent. Above all, from the viewpoint that the effects of the present invention are more excellent, 80,000 mass ppt or less is preferable, 20,000 mass ppt or less is more preferable, 10,000 mass ppt or less is further preferable, and 2,000 mass ppt or less is particularly preferable.
  • the lower limit is not particularly limited, but is preferably 0.1 mass ppt or more, more preferably 1 mass ppt or more.
  • the second organic compound one type may be used alone, or two or more types may be used. Among them, it is preferable to use two or more kinds from the viewpoint that the effects of the present invention are more excellent.
  • the chemical solution of the present invention contains the first organic compound and the second organic compound
  • the chemical solution of the present invention includes at least two of the first organic compound and the second organic compound in that the effect of the present invention is more excellent. It is preferable to contain the above compounds.
  • a form containing at least one or more of the first organic compounds and at least one or more of the second organic compounds is given. It is preferable that at least one of the two or more compounds has a ClogP of 5 or more.
  • At least one of the two or more compounds is preferably a compound represented by the above general formula (VI).
  • the ratio of the total content of the first organic compound and the second organic compound other than the compound represented by the general formula (VI) to the content of the compound represented by the general formula (VII) is not particularly limited. , 0.01 to 1 are preferred.
  • the chemical solution may contain a metal component.
  • the metal component includes metal particles and metal ions.
  • the content of the metal component indicates the total content of the metal particles and metal ions.
  • the chemical solution may contain either one of the metal particles and the metal ions, or may contain both.
  • the chemical solution preferably contains both metal particles and metal ions.
  • the metal element in the metal component is, for example, Na (sodium), K (potassium), Ca (calcium), Fe (iron), Cu (copper), Mg (magnesium), Mn (manganese), Li (lithium), Examples include Al (aluminum), Cr (chromium), Ni (nickel), Ti (titanium), and Zn (zirconium).
  • the metal component may contain one kind or two or more kinds of metal elements.
  • the metal particles may be a simple substance or an alloy, and may exist in a form in which the metal is associated with an organic substance.
  • the metal component may be a metal component inevitably included in each component (raw material) included in the chemical solution, or may be a metal component inevitably included during production, storage, and / or transfer of the treatment liquid. May be intentionally added.
  • the content is preferably 0.01 to 500 mass ppt, more preferably 0.01 to 250 mass ppt, based on the total mass of the chemical solution, from the viewpoint of more excellent defect suppression properties of the chemical solution. Is more preferable, and 0.01 to 100 parts by mass ppt is further preferable.
  • the content of the metal component is 0.01 mass ppt or more, an association is easily formed with the above-described first organic compound (or the second organic compound), and thus the metal component is easily removed from the substrate. As a result, defect suppression can be further improved.
  • the content of the metal component is 500 mass ppt or less, it is easy to avoid an increase in the number of defects caused by the metal component.
  • the content is preferably 0.01 to 400 mass ppt, more preferably 0.01 to 200 mass ppt, based on the total mass of the chemical solution, from the viewpoint that the defect suppression property of the chemical solution is more excellent. Is more preferable, and 0.01 to 80 parts by mass ppt is further preferable.
  • the content is preferably 0.01 to 400 mass ppt, more preferably 0.01 to 150 mass ppt, based on the total mass of the chemical solution, from the viewpoint of more excellent defect suppressing properties of the chemical solution. Is more preferable, and 0.01 to 40 mass ppt is more preferable.
  • the type and content of the specific metal ion and the specific metal particles in the chemical solution can be measured by the SP-ICP-MS method (Single Nano Particle Inductively Coupled Plasma Mass Spectrometry).
  • the SP-ICP-MS method uses the same apparatus as the normal ICP-MS method (inductively coupled plasma mass spectrometry), and differs only in data analysis. Data analysis of the SP-ICP-MS method can be performed by commercially available software.
  • the content of a metal component to be measured is measured irrespective of its existence form. Therefore, the total mass of the metal particles to be measured and the metal ions is determined as the content of the metal component.
  • the content of metal particles can be measured. Therefore, the content of metal ions in the sample can be calculated by subtracting the content of the metal particles from the content of the metal component in the sample.
  • Agilent 8800 triple quadrupole ICP-MS inductively coupled plasma mass spectrometry, option # 200
  • Agilent Technologies, Inc. is described in Examples. Can be measured by the following method.
  • Agilent 8900 manufactured by Agilent Technologies can be used.
  • the ratio of the total content of the first organic compound to the content of the metal component is not particularly limited, but is preferably 0.01 to 10000, and more preferably 0.1 to 5000 in that the effect of the present invention is more excellent.
  • the ratio of the total content of the first organic compound and the second organic compound to the content of the metal component is not particularly limited, but is preferably 0.01 to 50,000 from the viewpoint that the effect of the present invention is more excellent. 1 to 5000 is more preferable.
  • the ratio of the total content of the first organic compound and the second organic compound to the content of the metal particles is not particularly limited, but is preferably 0.01 to 50,000, and more preferably 0.05 to 50,000 in that the effect of the present invention is more excellent. 30,000 is more preferred.
  • the ratio of the total content of the first organic compound and the second organic compound to the content of the metal ion is not particularly limited, but is preferably from 0.03 to 30,000, more preferably from 0.05 to 30,000, in that the effect of the present invention is more excellent. 20,000 is more preferred.
  • the drug solution may contain water.
  • the water is not particularly limited, and for example, distilled water, ion-exchanged water, pure water and the like can be used.
  • Water may be added to the chemical solution, or may be unintentionally mixed into the chemical solution in the process of manufacturing the chemical solution.
  • Examples of the case where water is unintentionally mixed in the manufacturing process of the chemical solution include, for example, a case where water is contained in a raw material (for example, an organic solvent) used for manufacturing the chemical solution, and a case where water is mixed in the manufacturing process of the chemical solution ( For example, contamination is not limited to the above.
  • the content of water in the chemical is not particularly limited, but is preferably 0.05 to 2.0% by mass based on the total mass of the chemical.
  • the water content in the chemical solution means the water content measured using an apparatus based on the Karl Fischer moisture measurement method.
  • the chemical solution may contain a resin.
  • a resin P containing a group that is decomposed by the action of an acid to generate a polar group (a repeating unit containing an acid-decomposable group) is more preferable.
  • a resin containing a repeating unit represented by the formula (AI) described later which is a resin whose solubility in a developer containing an organic solvent as a main component is reduced by the action of an acid, is more preferable.
  • the resin containing the repeating unit represented by the formula (AI) described below contains a group that is decomposed by the action of an acid to generate an alkali-soluble group.
  • the polar group include an alkali-soluble group.
  • the alkali-soluble group include a carboxy group, a fluorinated alcohol group (preferably hexafluoroisopropanol group), a phenolic hydroxyl group, and a sulfo group.
  • the polar group in the acid-decomposable group is protected by an acid-eliminable group (acid-eliminable group).
  • acid-eliminable group examples include —C (R 36 ) (R 37 ) (R 38 ), —C (R 36 ) (R 37 ) (OR 39 ), and —C (R 01 ) (R 02 ) (OR 39 ).
  • R 36 to R 39 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group.
  • R 36 and R 37 may combine with each other to form a ring.
  • R 01 and R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group.
  • the resin P preferably contains a repeating unit represented by the formula (AI).
  • Xa 1 represents a hydrogen atom or an alkyl group which may have a substituent.
  • T represents a single bond or a divalent linking group.
  • Ra 1 to Ra 3 each independently represent an alkyl group (linear or branched) or a cycloalkyl group (monocyclic or polycyclic). Two of Ra 1 to Ra 3 may combine to form a cycloalkyl group (monocyclic or polycyclic).
  • the content of the repeating unit containing an acid-decomposable group is preferably from 20 to 90 mol%, and more preferably from 25 to 85 mol%, based on all repeating units in the resin P. Mol% is more preferable, and 30 to 80 mol% is still more preferable.
  • the resin P may contain other repeating units other than the repeating unit containing an acid-decomposable group.
  • the other repeating units include a repeating unit having a lactone structure, a repeating unit having a phenolic hydroxyl group, a repeating unit having a polar group, and a repeating unit having a silicon atom in a side chain.
  • the weight average molecular weight of the resin P is preferably from 1,000 to 200,000, more preferably from 3,000 to 20,000, more preferably from 5,000 to 15,000 as a polystyrene equivalent value by GPC (Gel permeation chromatography). More preferred.
  • the degree of dispersion (molecular weight distribution) of the resin P is usually 1 to 5, preferably 1 to 3, more preferably 1.2 to 3.0, and still more preferably 1.2 to 2.0.
  • the content of the resin P is preferably from 50 to 99.9% by mass, more preferably from 60 to 99.0% by mass, based on the total solid content.
  • one kind of the resin P may be used, or a plurality of kinds may be used.
  • the above-mentioned solid content means a component excluding a solvent such as an organic solvent and water in a chemical solution.
  • the chemical solution may further contain a known compound such as an acid generator, a basic compound, a quencher, a hydrophobic resin, and a surfactant.
  • a known compound such as an acid generator, a basic compound, a quencher, a hydrophobic resin, and a surfactant.
  • Chemicals are described in, for example, JP-A-2013-195844, JP-A-2016-057645, JP-A-2015-207006, WO 2014/148241, JP-A-2016-188385, and JP-A-2017-2017.
  • Components contained in the actinic ray-sensitive or radiation-sensitive resin composition described in JP-A-219818 and the like may be contained.
  • the chemical solution of the present invention is preferably used for manufacturing a semiconductor device. Especially, it is preferable to manufacture a semiconductor chip using the chemical solution of the present invention. Specifically, in a semiconductor device manufacturing process including a lithography process, an etching process, an ion implantation process, and a stripping process, an organic material is processed after each process or before moving to the next process. Specifically, it is suitably used as a pre-wet liquid, a developing liquid, a rinsing liquid, a polishing liquid, or the like. Alternatively, the chemical solution may be used as a diluting solution of the resin contained in the resist film forming composition (in other words, a solvent).
  • the above-mentioned chemical solution can be used for other uses other than the manufacture of semiconductor devices, and can also be used as a developer and a rinse for polyimide, a resist for sensors, a resist for lenses, and the like.
  • the above chemical solution can be used as a solvent for medical use or cleaning use.
  • it can be suitably used for cleaning pipes, containers, and substrates (for example, wafers and glass).
  • a cleaning liquid a pipe cleaning liquid and a container cleaning liquid, etc.
  • a liquid such as the above-mentioned pre-wet liquid.
  • the chemical liquid is suitably used for a pre-wet liquid, a developing liquid, a rinsing liquid, a polishing liquid, and a composition for forming a resist film.
  • a pre-wet liquid a developing liquid and a rinsing liquid
  • a polishing liquid a composition for forming a resist film.
  • a pre-wet solution containing the chemical solution of the present invention, a developing solution containing the chemical solution of the present invention, a rinsing solution containing the chemical solution of the present invention, a polishing solution containing the chemical solution of the present invention, and a resist film containing the chemical solution of the present invention May be used as a kit containing two or more selected from the group consisting of the composition for use in the present invention.
  • the method for producing the chemical solution is not particularly limited, and a known production method can be used.
  • the method for producing a drug solution preferably has a filtration step of obtaining a drug solution by filtering a substance to be purified containing an organic solvent using a filter from the viewpoint of obtaining more excellent effects of the present invention.
  • the material to be purified used in the filtration step may be procured by purchase or the like, or may be obtained by reacting the raw materials. It is preferable that the substance to be purified has a low content of impurities. Examples of such a commercially available product to be purified include a commercially available product called “high-purity grade product”.
  • a method for obtaining a purified product typically, a purified product containing an organic solvent
  • a known method can be used.
  • a method in which one or more raw materials are reacted in the presence of a catalyst to obtain an organic solvent there is no particular limitation on a method for obtaining a purified product (typically, a purified product containing an organic solvent) by reacting the raw materials.
  • a known method can be used.
  • Ipc2BH Diisopinocampheylborane
  • the method for producing a chemical solution of the present invention includes a filtration step of filtering the substance to be purified by using a filter to obtain a chemical solution.
  • the method of filtering the object to be purified using a filter is not particularly limited, and the object to be purified is passed through a filter unit having a housing and a filter cartridge housed in the housing under pressure or without pressure ( Is preferable.
  • the pore diameter of the filter is not particularly limited, and a filter having a pore diameter usually used for filtering a substance to be purified can be used.
  • the pore diameter of the filter is preferably 200 nm or less, more preferably 20 nm or less, still more preferably 10 nm or less, and more preferably 5 nm or less, in that the number of particles (metal particles and the like) contained in the chemical solution can be easily controlled in a desired range. Is particularly preferred, and 3 nm or less is most preferred.
  • the lower limit is not particularly limited, it is generally preferably 1 nm or more from the viewpoint of productivity.
  • the pore diameter and the pore diameter distribution of the filter are defined as isopropanol (IPA) or HFE-7200 (“Novec 7200”, manufactured by 3M, hydrofluoroether, C 4 F 9 OC 2).
  • H 5) means a pore size and pore size distribution determined by the bubble point of the.
  • the pore diameter of the filter be 5.0 nm or less, since the number of particles contained in the drug solution can be more easily controlled.
  • a filter having a pore size of 5 nm or less is also referred to as a “micropore size filter”.
  • the micropore size filter may be used alone, or may be used with a filter having another pore size. Among them, it is preferable to use a filter having a larger pore diameter from the viewpoint of better productivity. In this case, if the object to be purified, which has been filtered through a filter having a larger pore diameter in advance, is passed through a micropore size filter, clogging of the micropore size filter can be prevented.
  • the pore diameter is preferably 5.0 nm or less when one filter is used, and when two or more filters are used, the pore diameter of the filter having the smallest pore diameter is 5.0 nm. The following is preferred.
  • the form in which two or more types of filters having different pore diameters are sequentially used is not particularly limited, and examples thereof include a method of sequentially arranging the above-described filter units along a pipe through which a substance to be purified is transferred.
  • a filter having a smaller pore diameter may be subjected to a higher pressure than a filter having a larger pore diameter.
  • a pressure regulating valve, a damper, etc. are arranged between the filters to keep the pressure applied to the filter having a small pore diameter constant, or a filter unit containing the same filter is placed along a pipeline. It is preferable to increase the filtration area by arranging them in parallel. This makes it possible to more stably control the number of particles in the chemical solution.
  • the material of the filter is not particularly limited, and known materials for the filter can be used. Specifically, when it is a resin, polyamide such as nylon (for example, 6-nylon and 6,6-nylon); polyolefin such as polyethylene and polypropylene; polystyrene; polyimide; polyamideimide; Polytetrafluoroethylene, perfluoroalkoxyalkane, perfluoroethylene propene copolymer, ethylene-tetrafluoroethylene copolymer, ethylene-chlorotrifluoroethylene copolymer, polychlorotrifluoroethylene, polyvinylidene fluoride, and polyvinyl fluoride Fluorocarbon; polyvinyl alcohol; polyester; cellulose; cellulose acetate and the like.
  • polyamide such as nylon (for example, 6-nylon and 6,6-nylon)
  • polyolefin such as polyethylene and polypropylene
  • polystyrene polyimide
  • polyamideimide polyamideimi
  • nylon especially, 6,6-nylon is preferred
  • polyolefin especially, polyethylene is preferred
  • polyolefin are preferred in that they have better solvent resistance and the resulting chemical has more excellent defect suppression performance.
  • At least one member selected from the group consisting of (meth) acrylate and polyfluorocarbon (among others, polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkane (PFA) is preferable) is preferable.
  • PTFE polytetrafluoroethylene
  • PFA perfluoroalkoxyalkane
  • a polymer eg, nylon-grafted UPE obtained by graft-copolymerizing a polyamide (eg, nylon-6 or nylon-6,6 or the like) with a polyolefin (eg, UPE described later) may be used as the filter material.
  • a polyamide eg, nylon-6 or nylon-6,6 or the like
  • a polyolefin eg, UPE described later
  • the filter may be a surface-treated filter.
  • the method for surface treatment is not particularly limited, and a known method can be used. Examples of the surface treatment method include chemical modification treatment, plasma treatment, hydrophobic treatment, coating, gas treatment, and sintering.
  • Plasma treatment is preferable because the surface of the filter is made hydrophilic.
  • the water contact angle on the surface of the filter material that has been hydrophilized by plasma treatment is not particularly limited, but the static contact angle at 25 ° C. measured by a contact angle meter is preferably 60 ° or less, more preferably 50 ° or less. , 30 ° or less is more preferable.
  • a method of introducing an ion exchange group into a substrate is preferable. That is, as the filter, a filter in which each of the above-described materials is used as a base material and an ion exchange group is introduced into the base material is preferable. Typically, a filter including a layer containing a substrate containing an ion exchange group on the surface of the substrate is preferable.
  • the surface-modified substrate is not particularly limited, and a filter in which an ion exchange group is introduced into the above polymer is preferable in terms of easier production.
  • Examples of the ion exchange group include a cation exchange group such as a sulfonic acid group, a carboxy group, and a phosphate group, and examples of the anion exchange group include a quaternary ammonium group.
  • the method for introducing an ion-exchange group into a polymer is not particularly limited, and examples thereof include a method in which a compound containing an ion-exchange group and a polymerizable group is reacted with a polymer, and is typically grafted.
  • the method of introducing the ion-exchange group is not particularly limited, but the fibers of the above resin are irradiated with ionizing radiation ( ⁇ -rays, ⁇ -rays, ⁇ -rays, X-rays, electron beams, etc.) to form an active portion ( Radicals).
  • ionizing radiation ⁇ -rays, ⁇ -rays, ⁇ -rays, X-rays, electron beams, etc.
  • the irradiated resin is immersed in a monomer-containing solution to graft-polymerize the monomer onto the substrate.
  • a polymer bonded to the polyolefin fiber as a graft polymerization side chain is produced.
  • the resin containing the produced polymer as a side chain is brought into contact with a compound containing an anion exchange group or a cation exchange group to cause an ion exchange group to be introduced into the graft-polymerized side chain polymer, so that the final product is obtained. can get.
  • the filter may have a structure in which a woven or nonwoven fabric having ion exchange groups formed by a radiation graft polymerization method and a conventional glass wool, woven or nonwoven fabric filter material are combined.
  • the content of the metal component in the chemical solution containing the metal component can be easily controlled in a desired range.
  • the material of the filter containing an ion exchange group is not particularly limited, and examples thereof include a polyfluorocarbon and a material in which an ion exchange group is introduced into polyolefin, and a material in which an ion exchange group is introduced into polyfluorocarbon is more preferable.
  • the pore size of the filter containing an ion exchange group is not particularly limited, but is preferably 1 to 30 nm, more preferably 5 to 20 nm.
  • the filter containing the ion-exchange group may also serve as the filter having the smallest pore diameter described above, or may be used separately from the filter having the smallest pore diameter.
  • the filtration step is preferably performed using a filter containing an ion exchange group and a filter having no ion exchange group and having a minimum pore diameter.
  • the material of the filter having the minimum pore diameter described above is not particularly limited, but from the viewpoint of solvent resistance and the like, generally, polyfluorocarbon, and at least one selected from the group consisting of polyolefins are preferable, and polyolefin is preferably used. More preferred.
  • the filter used in the filtration step two or more types of filters having different materials may be used.
  • polyolefins, polyfluorocarbons, polyamides, and filters made of materials having ion exchange groups introduced therein may be used. Two or more selected from the group may be used.
  • the pore structure of the filter is not particularly limited, and may be appropriately selected according to the components in the object to be purified.
  • the pore structure of a filter refers to a pore size distribution, a positional distribution of pores in a filter, and a shape of pores, and is typically controlled by a filter manufacturing method. It is possible.
  • a porous film can be obtained by sintering a powder of a resin or the like, and a fiber film can be obtained by a method such as electrospinning, electroblowing, and meltblowing. These have different pore structures.
  • a “porous membrane” refers to a membrane that retains components in an object to be purified, such as gels, particles, colloids, cells, and poly-oligomers, but a component that is substantially smaller than the pores passes through the pores.
  • the retention of components in the object to be purified by the porous membrane may depend on operating conditions, such as surface velocity, use of surfactant, pH, and combinations thereof, and the pore size of the porous membrane, It may depend on the structure and the size of the particles to be removed, and the structure (hard or gel, etc.).
  • non-sieving membranes include, but are not limited to, nylon membranes such as nylon-6 membrane and nylon-6,6 membrane.
  • non-sieve retention mechanism refers to retention caused by mechanisms such as filter pressure drop or interference, diffusion, and adsorption that are not related to pore size.
  • Non-sieve retention includes retention mechanisms such as obstruction, diffusion, and adsorption that remove particles to be removed from the object to be purified, regardless of the filter pressure drop or the filter pore size.
  • the adsorption of particles to the filter surface can be mediated, for example, by intermolecular van der Waals forces and electrostatic forces.
  • An obstructive effect occurs when particles traveling in a non-sieving membrane layer having a tortuous path are not turned fast enough to avoid contact with the non-sieving membrane.
  • Particle transport by diffusion results mainly from random or Brownian motion of small particles, which creates a certain probability that the particles will collide with the filter media. If there is no repulsion between the particles and the filter, the non-sieve retention mechanism can be active.
  • UPE (ultra high molecular weight polyethylene) filters are typically sieved membranes.
  • a sieve membrane refers to a membrane that primarily captures particles via a sieve holding mechanism, or is a membrane that is optimized to capture particles via a sieve holding mechanism.
  • Typical examples of sieving membranes include, but are not limited to, polytetrafluoroethylene (PTFE) membranes and UPE membranes.
  • the “sieving holding mechanism” refers to the holding of the result due to the removal target particles being larger than the pore diameter of the porous membrane. The sieve retention is improved by forming a filter cake (agglomeration of the particles to be removed on the surface of the membrane). The filter cake effectively performs the function of a secondary filter.
  • the material of the fiber membrane is not particularly limited as long as it is a polymer capable of forming the fiber membrane.
  • the polymer include polyamide and the like.
  • the polyamide include nylon 6, nylon 6,6, and the like.
  • the polymer forming the fiber membrane may be poly (ether sulfone).
  • the surface energy of the fibrous membrane is preferably higher than the polymer which is the material of the porous membrane on the secondary side.
  • An example of such a combination is a case where the material of the fiber membrane is nylon and the porous membrane is polyethylene (UPE).
  • the method for producing the fiber membrane is not particularly limited, and a known method can be used. As described above, examples of the method for producing a fiber membrane include electrospinning, electroblowing, and meltblowing.
  • the pore structure of the porous membrane is not particularly limited, and the shape of the pore is, for example, a lace shape, a string shape, a node shape, or the like. No.
  • the distribution of pore sizes in the porous membrane and the distribution of positions in the membrane are not particularly limited.
  • the size distribution may be smaller and the distribution position in the film may be symmetric. Further, the size distribution may be larger and the distribution position in the film may be asymmetric (the above film is also referred to as “asymmetric porous film”).
  • asymmetric porous membrane the size of the pores varies throughout the membrane, and typically the pore size increases from one surface of the membrane to the other surface of the membrane.
  • the surface on the side with many pores having large pore diameters is referred to as “open side”, and the surface on the side with many pores having small pore diameters is also referred to as “tight side”.
  • the asymmetric porous membrane include a membrane in which the size of pores is minimized at a certain position within the thickness of the membrane (this is also referred to as an “hourglass shape”).
  • the primary side is made to have a larger-sized pore using an asymmetric porous membrane, in other words, if the primary side is made to be the open side, a pre-filtration effect can be produced.
  • the porous membrane may contain a thermoplastic polymer such as PESU (polyethersulfone), PFA (perfluoroalkoxyalkane, a copolymer of ethylene tetrafluoride and perfluoroalkoxyalkane), polyamide, and polyolefin. , Polytetrafluoroethylene and the like.
  • PESU polyethersulfone
  • PFA perfluoroalkoxyalkane
  • polyamide polyamide
  • polyolefin polyolefin
  • ultra-high molecular weight polyethylene is preferable as the material of the porous membrane.
  • Ultra-high molecular weight polyethylene means a thermoplastic polyethylene having an extremely long chain, and preferably has a molecular weight of 1,000,000 or more, typically 2 to 6,000,000.
  • a filter used in the filtration step two or more types of filters having different pore structures may be used, or a filter of a porous membrane and a filter of a fiber membrane may be used in combination. Specific examples include a method using a nylon fiber membrane filter and a UPE porous membrane filter.
  • the filters may be obtained from the market, as described above.
  • the filter When such a filter is put into circulation, the filter is often packed in a packing material such as being put in a packing bag and sealed for the purpose of avoiding contamination and the like.
  • the portion of the packing material that can come into contact with the filter is a polyolefin (eg, polyethylene including high-density polyethylene) or the like, the impurities are less than when the contact portion is made of a fluororesin or stainless steel.
  • the filter is packed with a packing material in which at least a part of the contact portion with the filter is made of a fluorine resin or stainless steel.
  • Examples of the fluorine-based resin in the contact portion include PTFE and PFA.
  • Examples of the stainless steel in the contact portion include stainless steel described below as a corrosion-resistant material, and among them, stainless steel (EP-SUS) in which the contact portion is subjected to electrolytic polishing is preferable.
  • the area of the contact portion made of a fluororesin and / or stainless steel is preferably 50 to 100%, more preferably 90 to 100%, and even more preferably 99 to 100% with respect to the total area of the contact portion.
  • the form of the packing material is not particularly limited, and may be a bag form or a capsule form. The packing material only needs to have at least a part of the contact portion made of a fluorine-based resin and / or stainless steel.
  • the entire packing material may be made of a fluorine-based resin and / or stainless steel, or may be made of another material. May be used.
  • the filter is sufficiently washed before use.
  • impurities contained in the filter are likely to be brought into the chemical solution.
  • At least one selected from the group consisting of a filter material, a pore diameter, and a pore structure passes the material to be purified through two or more types of different filters. Or a multi-stage filtration step. Further, the substance to be purified may be passed through the same filter a plurality of times, or the substance to be purified may be passed through a plurality of filters of the same type.
  • the material of the liquid contacting portion of the purification device used in the filtration step is not particularly limited, but non-metallic materials (fluorinated resin And the like, and at least one selected from the group consisting of electrolytically polished metal materials (such as stainless steel) (hereinafter, these are collectively referred to as “corrosion-resistant materials”).
  • non-metallic materials fluorinated resin And the like, and at least one selected from the group consisting of electrolytically polished metal materials (such as stainless steel) (hereinafter, these are collectively referred to as “corrosion-resistant materials”).
  • the wetted part of the production tank is formed of a corrosion-resistant material, which means that the production tank itself is made of a corrosion-resistant material, or that the inner wall surface of the production tank is coated with a corrosion-resistant material.
  • the non-metallic material is not particularly limited, and a known material can be used.
  • the non-metallic material include polyethylene resin, polypropylene resin, polyethylene-polypropylene resin, and fluorine-based resin (for example, ethylene tetrafluoride resin, ethylene tetrafluoride-perfluoroalkyl vinyl ether copolymer resin, ethylene tetrafluoride -Propylene hexafluoro copolymer resin, ethylene tetrafluoride-ethylene copolymer resin, ethylene trifluoride-ethylene copolymer resin, vinylidene fluoride resin, ethylene trifluoride ethylene copolymer resin, and vinyl fluoride resin And the like, but not limited thereto.
  • the metal material is not particularly limited, and a known material can be used.
  • the metal material include a metal material in which the total content of chromium and nickel is more than 25% by mass relative to the total mass of the metal material, and among them, 30% by mass or more is more preferable.
  • the upper limit of the total content of chromium and nickel in the metal material is not particularly limited, but is generally preferably 90% by mass or less.
  • the metal material include stainless steel and a nickel-chromium alloy.
  • the stainless steel is not particularly limited, and a known stainless steel can be used. Among them, an alloy containing 8% by mass or more of nickel is preferable, and an austenitic stainless steel containing 8% by mass or more of nickel is more preferable.
  • austenitic stainless steels include SUS (Steel Use Stainless) 304 (Ni content 8% by mass, Cr content 18% by mass), SUS304L (Ni content 9% by mass, Cr content 18% by mass), SUS316 ( Ni content of 10% by mass, Cr content of 16% by mass) and SUS316L (Ni content of 12% by mass and Cr content of 16% by mass).
  • the nickel-chromium alloy is not particularly limited, and a known nickel-chromium alloy can be used. Among them, a nickel-chromium alloy having a nickel content of 40 to 75% by mass and a chromium content of 1 to 30% by mass is preferable. Examples of the nickel-chromium alloy include Hastelloy (trade name, the same applies hereinafter), Monel (trade name, the same applies hereinafter), and Inconel (trade name, hereinafter the same).
  • Hastelloy C-276 (Ni content 63% by mass, Cr content 16% by mass), Hastelloy-C (Ni content 60% by mass, Cr content 17% by mass), and Hastelloy C-276 22 (Ni content 61% by mass, Cr content 22% by mass).
  • the nickel-chromium alloy may further contain boron, silicon, tungsten, molybdenum, copper, cobalt, and the like, if necessary, in addition to the above alloy.
  • the method of electropolishing the metal material is not particularly limited, and a known method can be used.
  • a known method can be used.
  • the methods described in paragraphs [0011] to [0014] of JP-A-2015-227501 and paragraphs [0036] to [0042] of JP-A-2008-264929 can be used.
  • the metal material has a higher chromium content in the passivation layer on the surface than a chromium content in the parent phase due to electrolytic polishing. Therefore, it is presumed that the use of a refining device in which the liquid contact portion is formed of a metal material that has been electropolished, makes it difficult for the metal component to flow out into the object to be purified.
  • the metal material may be buffed.
  • the buffing method is not particularly limited, and a known method can be used.
  • the size of the abrasive grains used for the buffing finish is not particularly limited, but is preferably # 400 or less from the viewpoint that irregularities on the surface of the metal material tend to be smaller.
  • the buff polishing is preferably performed before the electrolytic polishing.
  • the method for producing a chemical solution may further include a step other than the filtration step.
  • Steps other than the filtration step include, for example, a distillation step, a reaction step, and a charge removal step.
  • the distillation step is a step of distilling an object to be purified containing an organic solvent to obtain a distilled object to be purified.
  • the method for distilling the object to be purified is not particularly limited, and a known method can be used.
  • a distillation column is arranged on the primary side of a purification device provided for a filtration step, and a distilled product to be purified is introduced into a production tank.
  • the liquid contact portion of the distillation column is not particularly limited, but is preferably formed of the corrosion-resistant material described above.
  • the reaction step is a step of reacting the raw materials to produce a purified product containing an organic solvent as a reactant.
  • the method for producing the object to be purified is not particularly limited, and a known method can be used. Typically, there is a method in which a reaction tank is arranged on the primary side of a production tank (or a distillation column) of a purification device to be subjected to a filtration step, and a reactant is introduced into the production tank (or a distillation column). At this time, the liquid contact portion of the production tank is not particularly limited, but is preferably formed of the corrosion-resistant material described above.
  • the charge removing step is a step of removing charges from the object to be purified to reduce the charged potential of the object to be purified.
  • the static elimination method is not particularly limited, and a known static elimination method can be used.
  • Examples of the charge removal method include a method of contacting an object to be purified with a conductive material.
  • the contact time for bringing the object to be purified into contact with the conductive material is preferably 0.001 to 60 seconds, more preferably 0.001 to 1 second, and still more preferably 0.01 to 0.1 second.
  • the conductive material include stainless steel, gold, platinum, diamond, and glassy carbon.
  • ⁇ Purification of the object to be purified is preferably performed in a clean room, in which the opening of the container, the cleaning of the container and the device, the storing of the solution, and the analysis are all performed.
  • the clean room is preferably a clean room having a class 4 or higher cleanliness defined by International Standard ISO1464-1: 2015 defined by the International Organization for Standardization. Specifically, it is preferable to satisfy any one of ISO class 1, ISO class 2, ISO class 3, and ISO class 4, more preferably to satisfy ISO class 1 or ISO class 2, and to satisfy ISO class 1. Is more preferred.
  • the storage temperature of the drug solution is not particularly limited, but impurities and the like contained in the drug solution in a trace amount are more difficult to elute, and as a result, a superior effect of the present invention can be obtained. .
  • the drug solution produced by the above purification method may be stored in a container and stored until use.
  • a combination of such a container and a drug solution contained in the container is referred to as a drug solution container.
  • the medicinal solution is taken out of the stored medicinal solution container and used.
  • the container As a container for storing the above-mentioned chemical solution, it is preferable that the container has a high degree of cleanness and a small amount of impurities eluted for use in manufacturing semiconductor devices.
  • Specific examples of usable containers include, but are not limited to, “Clean Bottle” series manufactured by Aicello Chemical Co., Ltd. and “Pure Bottle” manufactured by Kodama Resin Kogyo.
  • a multi-layer bottle having a six-layer structure made of six kinds of resins or a seven-layer structure made of six kinds of resins is used for the purpose of preventing impurities from being mixed into the chemical solution (contamination). Is also preferred. Examples of these containers include the containers described in JP-A-2015-123351.
  • the liquid-contact part of this container may be a corrosion-resistant material (preferably, electrolytically polished stainless steel or a fluororesin) or glass described above. It is preferable that 90% or more of the area of the liquid contact part is made of the above-mentioned material, and it is more preferable that all of the liquid contact part is made of the above-mentioned material from the viewpoint that the superior effects of the present invention can be obtained.
  • a corrosion-resistant material preferably, electrolytically polished stainless steel or a fluororesin
  • the porosity of the liquid medicine container in the container is preferably 2 to 80% by volume, more preferably 2 to 50% by volume, and still more preferably 5 to 30% by volume. Note that the porosity is calculated according to equation (1).
  • Formula (1): Porosity ⁇ 1 ⁇ (volume of drug solution in container / volume of container in container) ⁇ ⁇ 100
  • the container volume is synonymous with the internal volume (capacity) of the container.
  • Filter A Nippon Filter Co., Ltd.'s activated carbon filter "FCC-S" (fiber) -"Purasol 200 nm”: UPE membrane (material) manufactured by Entegris, pore size 200 nm -"PTFE 7 nm”: Polytetrafluoroethylene filter, manufactured by Entegris, pore size 7 nm -"UPE 1 nm”: Ultra high molecular weight polyethylene filter, manufactured by Pall, pore size 1 nm -"UPE 3 nm”: Ultra-high molecular weight polyethylene filter, manufactured by Pall, pore size 3 nm -"UPE 5 nm”: Ultra-high molecular weight polyethylene filter, manufactured by Pall, pore size 5 nm -"Nylon 5 nm”: Nylon filter, manufactured by Pall, pore size 5 nm
  • MIBC MIBC
  • MIBC (A) MIBC (A)
  • MIBC (D) MIBC
  • the purified product purified by distillation is stored in a storage tank, and the purified product stored in the storage tank is filtered through a filter 1 and a filter 2 shown in Table 1, and then filtered through a filter 2.
  • the object to be purified was circulated to the upstream side of the filter 1 and circulated and filtered again by the filters 1 and 2.
  • the to-be-purified material subjected to the circulation filtration treatment using the filters 1 and 2 was passed through the filters 3 and 4 shown in Table 1 in this order, and stored in the storage tank.
  • the object to be purified stored in the storage tank is filtered by the filter 5 shown in Table 1, and the object to be purified after being filtered by the filter 5 is circulated to the upstream side of the filter 5 and again filtered by the filter 5.
  • a circulation filtration treatment for filtration was performed. After the circulating filtration treatment, the containers were placed in the containers shown in Table 1 at a predetermined porosity.
  • liquid contact parts of various devices for example, distillation towers, pipes, storage tanks, etc.
  • the liquid contact parts of various devices for example, distillation towers, pipes, storage tanks, etc.
  • ⁇ Content of organic component The content of the organic components (the first organic compound, the second organic compound, etc.) in the various chemical solutions was measured using a gas chromatograph mass spectrometer (GC / MS) (manufactured by Agilent, GC: 7890B, MS: 5977B EI / CI MSD). And analyzed.
  • GC / MS gas chromatograph mass spectrometer
  • ⁇ Content of metal component The content of metal components (metal ions, metal particles) in the chemical solution was measured by a method using ICP-MS and SP-ICP-MS. The following equipment was used. ⁇ Manufacturer: PerkinElmer ⁇ Model: NexION350S The following analysis software was used for the analysis. ⁇ SP-ICP-MS dedicated Synagisix nano application module ⁇ Syngisix for ICP-MS software
  • ClogP in the table represents the ClogP value of the organic solvent.
  • Purity in the table indicates the content (% by mass) of the organic solvent in the obtained drug solution with respect to the total weight of the drug solution.
  • Total content 1 (mass ppt) in the table represents the total content (mass ppt) of the first organic compound
  • total content 2 (mass ppt) represents the total content (mass ppt) of the second organic compound. ppt).
  • “Ratio 1” in the table represents the ratio of the total content of the first organic compound to the content of the metal component
  • “Ratio 2” represents the total content of the first organic compound and the second organic compound to the content of the metal particles.
  • Ratio 3 represents the ratio of the total content of the first organic compound and the second organic compound to the content of the metal ion
  • Rao 4" represents the ratio of the first organic compound to the content of the metal component.
  • the ratio represents the ratio of the total content of the compound and the second organic compound
  • ratio 5 is the ratio of the total content of the first organic compound and the second organic compound other than the compound (VI) to the content of the compound (VI).
  • the drug solution obtained as described above contained the compounds shown in the columns “Compound (I)” to “Compound (VII)”.
  • Each compound in the column “Type” in the columns “Compound (I)” to “Compound (VII)” in the table represents the following.
  • the ClogP value of each compound described below was as follows.
  • ⁇ Test> (Pre-wet liquid, rinse liquid)
  • the defect suppressing properties of the manufactured chemical solution when used as a pre-wet solution and a rinsing solution were evaluated by the following method. First, a chemical solution was spin-discharged onto a silicon substrate having a diameter of 300 mm, and 0.5 cc of each chemical solution was discharged onto the surface of the substrate while rotating the substrate. Thereafter, the substrate was spin-dried. Next, using a wafer inspection apparatus “SP-5” manufactured by KLA-Tencor, the number of defects present on the substrate after the application of the chemical was measured (this is referred to as a measured value).
  • the particulate foreign matter is converted into a “metal residue defect” mainly composed of a metal and a “metal residue defect” mainly composed of an organic substance. It was classified into "Particulate organic residue defects” and measured. Further, non-particle-like spot-like defects were counted as “stain-like defects”. In addition, if any of the metal residue defect, the particulate organic residue defect, and the stain-like residue defect is evaluated as C or more, it contains a defect suppressing property required as a chemical.
  • EDAX energy-dispersive X-ray spectroscopy
  • a resist pattern was formed by the following operation.
  • An organic antireflection film forming composition ARC29SR manufactured by Nissan Chemical Industries, Ltd.
  • ARC29SR manufactured by Nissan Chemical Industries, Ltd.
  • a pre-wet liquid was dropped on the surface of the silicon wafer on which the antireflection film was formed on the antireflection film side, and spin coating was performed.
  • (active light-sensitive or radiation-sensitive resin composition 1) described later or (active light-sensitive or radiation-sensitive resin composition 2) is applied onto the antireflection film after the pre-wet process.
  • Prebake (PB) was performed at 100 ° C. for 60 seconds to form a resist film having a thickness of 150 nm.
  • (actinic ray-sensitive or radiation-sensitive resin composition 1) was used, and in Examples 60 to 70, (actinic ray-sensitive or radiation-sensitive resin composition) was used. 2) was used.
  • Acid-decomposable resin represented by the following formula (weight average molecular weight (Mw): 7500): the numerical value described in each repeating unit means mol%): 100 parts by mass
  • the polymer type quencher has a weight average molecular weight (Mw) of 5000.
  • Mw weight average molecular weight
  • Hydrophobic resin shown below 4 parts by mass (mass ratio is 0.5: 0.5 in order from the left)
  • the hydrophobic resin on the left side has a weight average molecular weight. (Mw) is 7000, and the weight average molecular weight (Mw) of the right hydrophobic resin is 8000.
  • the numerical value described in each repeating unit means a molar ratio.
  • Acid-decomposable resin (resin represented by the following formula (weight average molecular weight (Mw): 8000)): 100 parts by mass
  • each repeating unit in the above formula was, in order from the left, 30 mol%, 15 mol%, 15 mol%, 20 mol%, and 20 mol% based on all repeating units. .
  • Hydrophobic resin shown below 20 parts by mass (mass ratio was 3: 7 in order from the top)
  • the weight average molecular weight (Mw) of the upper hydrophobic resin is 10,000
  • the weight average molecular weight (Mw) of the lower hydrophobic resin is 7000.
  • the numerical value described in each repeating unit means a molar ratio.
  • the wafer on which the resist film was formed was subjected to pattern exposure at 25 mJ / cm 2 using an ArF excimer laser scanner (Numerical Aperture: 0.75). Then, it heated at 120 degreeC for 60 seconds. Subsequently, each developing solution (chemical solution) was developed by paddle for 30 seconds. Next, the wafer was rotated at 4000 rpm for 30 seconds to form a negative resist pattern. Thereafter, the obtained negative pattern was heated at 200 ° C. for 300 seconds. Through the above steps, an L / S pattern (average pattern width: 45 nm) having a line / space ratio of 1: 1 was obtained. Each pattern was evaluated for developability and defect suppression.
  • ⁇ Defect suppression> The pattern of the formed wafer was observed using a pattern defect apparatus (Multi-Purpose SEM (Scanning Electron Microscope) “Inspago” RS6000 series manufactured by Hitachi High-Technologies Corporation), and the number of the following defects was measured.
  • -Defective development defect Defect in which no space is formed up to the bottom of the pattern-Residual defect: Defect in which foreign matter is present on the pattern-Uniformity defect: Defect in which the pattern width is ⁇ 1 nm or more with respect to a specified value
  • the defect contains the defect suppressing property required as a chemical.
  • AA The number of corresponding defects was 3 / wafer or less.
  • A The number of corresponding defects exceeded 3 / wafer and was 5 / wafer or less.
  • B The number of corresponding defects exceeded 5 / wafer and was 10 / wafer or less.
  • C The number of corresponding defects exceeded 10 / wafer and was 30 / wafer or less.
  • D The number of corresponding defects exceeded 30 / wafer.
  • Example 75 dimethyl malonate and isoamyl ether were mixed at a ratio of 5: 5 (mass ratio).
  • Table 1 [Part 1] ⁇ 1> to ⁇ 7> data relating to each example and comparative example is shown in each row of Table 1 [Part 1] ⁇ 1> to ⁇ 7> and Table 1 [Part 2] ⁇ 1> to ⁇ 7>.
  • Table 1 [Part 1] ⁇ 1> PGMM was used as the organic solvent, and as shown in Table 1 [Part 1] ⁇ 2>, the total amount of metal ions in the chemical solution was measured. The amount is 35 mass ppt, and as shown in Table 1 [part 1] ⁇ 3>, the total amount of metal particles in the chemical solution is 12.3 mass ppt, as shown in Table 1 [part 1] ⁇ 4>.
  • the total amount of the compound (I) was 89 mass ppt, and as shown in Table 1 [1] ⁇ 5>, the total amount of the compound (V) was 45 mass ppt, and Table 1 [1] As shown in ⁇ 6>, the ratio 1 is 2.12, and as shown in Table 1 [Part 1] ⁇ 7>, the metal residue is “A”. The same applies to other examples and comparative examples.
  • the content of the metal component is 0.1 to 500 mass ppt with respect to the total mass of the chemical solution. If the effect was better.
  • the total content 1 total content of the first organic compound
  • the ratio 1 is 0.01 to 10000, the effect is more improved. It was excellent.
  • ⁇ EUV exposure (Actinic ray-sensitive or radiation-sensitive resin composition (resist composition 1))
  • a resist composition 1 was obtained by mixing each component with the following composition.
  • Ethyl lactate commercially available, high purity grade
  • This resist film was exposed through a reflective mask using an EUV exposure machine (manufactured by ASML; NXE3350, NA 0.33, Dipole 90 °, outer sigma 0.87, inner sigma 0.35). Thereafter, heating (PEB: Post Exposure Bake) was performed at 85 ° C. for 60 seconds. Next, a developing solution (butyl acetate / manufactured by FETW) was sprayed for 30 seconds by a spray method for development, and a rinsing liquid was discharged onto a silicon wafer for 20 seconds by a spin coating method to be rinsed.
  • EUV exposure machine manufactured by ASML; NXE3350, NA 0.33, Dipole 90 °, outer sigma 0.87, inner sigma 0.35.
  • heating PEB: Post Exposure Bake
  • a developing solution butyl acetate / manufactured by FETW
  • a rinsing liquid was discharged onto a silicon wafer for 20 seconds by a spin coating method to be rinsed.
  • the silicon wafer was rotated at a rotation speed of 2000 rpm for 40 seconds to form a line-and-space pattern having a space width of 20 nm and a pattern line width of 15 nm.
  • the chemicals used in Examples 1 to 48 and 71 to 75 described above were used.
  • the desired effect having the same tendency as in Table 1 [Part 1] ⁇ 7> was obtained. was gotten.

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Abstract

La présente invention concerne une solution chimique ayant un excellent effet inhibiteur de défaut; un récipient de solution chimique; un kit; et un procédé de production d'une puce semi-conductrice. Cette solution chimique contient un solvant organique. La solution chimique contient en outre au moins un premier composé organique choisi dans le groupe constitué par les composés représentés par la formule générale (I) à la formule générale (V). La quantité totale du premier composé organique s'inscrit dans la plage de 0,01 à 100 000 ppt en masse par rapport à la masse totale de la solution chimique.
PCT/JP2019/026964 2018-07-11 2019-07-08 Solution chimique, récipient de solution chimique, kit et procédé de production de puce semi-conductrice WO2020013119A1 (fr)

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WO2018061573A1 (fr) * 2016-09-27 2018-04-05 富士フイルム株式会社 Médicament liquide, corps de réception de médicament liquide, procédé permettant de remplir un médicament liquide, et procédé permettant de stocker un médicament liquide
WO2018092763A1 (fr) * 2016-11-18 2018-05-24 富士フイルム株式会社 Liquide chimique, kit et procédé de formation de motif
WO2018142888A1 (fr) * 2017-02-01 2018-08-09 富士フイルム株式会社 Procédé et dispositif de fabrication de médicament liquide

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WO2018043697A1 (fr) 2016-09-02 2018-03-08 富士フイルム株式会社 Procédé et dispositif de purification de solvant organique

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WO2018061573A1 (fr) * 2016-09-27 2018-04-05 富士フイルム株式会社 Médicament liquide, corps de réception de médicament liquide, procédé permettant de remplir un médicament liquide, et procédé permettant de stocker un médicament liquide
WO2018092763A1 (fr) * 2016-11-18 2018-05-24 富士フイルム株式会社 Liquide chimique, kit et procédé de formation de motif
WO2018142888A1 (fr) * 2017-02-01 2018-08-09 富士フイルム株式会社 Procédé et dispositif de fabrication de médicament liquide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11500290B2 (en) * 2018-11-13 2022-11-15 International Business Machines Corporation Adhesion promoters

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