WO2020004569A1 - Etching device - Google Patents

Etching device Download PDF

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Publication number
WO2020004569A1
WO2020004569A1 PCT/JP2019/025660 JP2019025660W WO2020004569A1 WO 2020004569 A1 WO2020004569 A1 WO 2020004569A1 JP 2019025660 W JP2019025660 W JP 2019025660W WO 2020004569 A1 WO2020004569 A1 WO 2020004569A1
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Prior art keywords
etching
glass substrate
substrate
processed
chamber
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PCT/JP2019/025660
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French (fr)
Japanese (ja)
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一馬 竹内
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株式会社Ｎｓｃ
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Publication of WO2020004569A1 publication Critical patent/WO2020004569A1/en

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to an apparatus for etching a substrate to be processed such as a glass substrate, and more particularly, to a single wafer type etching apparatus for spraying an etching solution onto a substrate to be processed.
  • a flat panel display panel is manufactured by sealing a functional layer required for image display such as a liquid crystal layer with two glass substrates.
  • a functional layer required for image display such as a liquid crystal layer with two glass substrates.
  • it is effective to make the glass substrate thin by an etching process.
  • the etching process generally employs a wet etching process in which a glass substrate is brought into contact with an etching solution.
  • Wet etching is roughly classified into single wafer etching and immersion etching.
  • Single-wafer etching is a method in which an etching solution is sprayed onto a glass substrate being transported by using a spray or the like.
  • the immersion etching is performed by immersing a jig holding a plurality of glass substrates in an etching bath containing an etching solution.
  • single-wafer etching is considered to be more advantageous for thinning a glass substrate than immersion etching, and in recent years, the demand for single-wafer etching has been increasing.
  • the single-wafer etching apparatus since a substrate to be processed is processed in a processing chamber, there is little possibility that an etchant scatters outside the apparatus or an acid gas such as hydrofluoric acid leaks outside the apparatus (for example, , Patent Document 1). For this reason, the single wafer type etching apparatus is considered to be excellent also in terms of worker safety and working environment.
  • the jetted etchant is scattered and adheres to the inner wall, or the etching chamber is filled with a gas vaporized by the etchant.
  • the etchant reacts with the glass substrate to generate sludge, which is an insoluble product. For this reason, there is a problem that the sludge adheres to the inside of the processing chamber due to the drying of the etching solution or the acidic gas attached to the inner wall, and the clogging of the piping and the exhaust port occurs.
  • the etchant attached to the ceiling may fall down due to the influence of gravity and adhere to the substrate to be processed.
  • sludge in the etching solution may adhere to the surface of the glass substrate, resulting in uneven etching.
  • Such etching unevenness is more likely to become a quality problem as the thickness of the glass substrate becomes thinner.
  • An object of the present invention is to provide a single-wafer etching apparatus capable of preventing the processing chamber from being stained by an etching solution or an acidic gas in the processing chamber.
  • the etching apparatus is an etching apparatus configured to inject an etching solution onto a substrate to be processed being transported in a predetermined direction, and includes a transport path, a spray unit, and a processing chamber.
  • the transfer path is configured to transfer the substrate to be processed in a predetermined transfer direction.
  • the spray unit is configured to spray the etching liquid onto the substrate to be processed on the transport path.
  • the processing chamber is configured to house at least the transfer path and the spray unit therein, and has at least a ceiling having an arc shape in cross section and having transparency.
  • the arc shape in a sectional view means that the shape of the cross section orthogonal to the transport direction has an arc shape.
  • the etching solution scattered in the processing chamber slides down the ceiling in an arc shape in cross section, the etching solution adheres to the processing chamber and adheres as sludge, or the etching solution adheres to the inner wall. It is possible to prevent a problem such as dropping on a processing substrate. Further, by providing the ceiling with transparency, it becomes easy to visually recognize the substrate to be processed on which the etching process is performed. This facilitates the work of checking the substrate to be processed even when a problem occurs during the etching process.
  • the ceiling is preferably formed of a transparent resin, and a polymethylpentene film is preferably attached to the inner wall of the transparent resin material.
  • a transparent resin By using a transparent resin, it becomes easy to form a curved shape of the ceiling. Further, by making the ceiling part arc-shaped in cross section, the load applied to the ceiling part can be dispersed, so that the reinforcing material used for the ceiling part can be reduced. By reducing the number of structures on the ceiling, accumulation of the etching liquid on the ceiling can be suppressed. Further, by attaching the polymethyl pen film to the inner wall, the chemical resistance of the ceiling can be further improved while maintaining the transparency. Furthermore, since polymethylpentene has a low surface tension, the etching solution easily flows down along the ceiling.
  • the spray unit slides in a direction perpendicular to the direction in which the substrate to be processed is transported.
  • the etching liquid can be uniformly sprayed onto the substrate to be processed, and the possibility of uneven etching can be reduced.
  • the ceiling has an arc shape in cross section, it is possible to secure a movable area of the spray unit.
  • a single-wafer etching apparatus capable of preventing the processing chamber from being stained by an etching solution or an acidic gas scattered in the processing chamber.
  • FIG. 1 is a schematic side view of an etching apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a configuration of an etching chamber according to an embodiment of the present invention.
  • FIGS. 1A and 1B are schematic diagrams of a glass substrate etching apparatus 10 according to the present embodiment.
  • the etching apparatus 10 includes a carry-in unit 12, a pre-washing chamber 14, a first etching chamber 161, a second etching chamber 162, a post-washing chamber 18, an unloading unit 20, and a transport roller 30.
  • the transport roller 30, as shown in FIG. 2, is arranged along the length direction of the etching apparatus 10, and is configured to transport the glass substrate 24 in the horizontal direction. As shown in FIG. 2, the transport rollers 30 are arranged at regular intervals in the transport direction of the glass substrate 24, and are configured to transport the glass substrate 24 by supporting it from below.
  • the transport roller 30 corresponds to a transport path described in the claims.
  • the transport speed of the glass substrate 24 is preferably set as appropriate in consideration of the size and thickness of the glass substrate 24, the jetting pressure of the etching solution, the composition of the etching solution, and the like.
  • the etching apparatus 10 is configured to perform an etching process such as thinning by spraying an etchant on the glass substrate 24 being transported by the transport roller 30.
  • the loading unit 12 is configured to introduce the glass substrate 24 into the etching apparatus 10 by placing the glass substrate 24 on the transport roller 30.
  • the glass substrate 24 is etched by passing through each chamber while being transported in the horizontal direction by the transport roller 30, and is etched until a desired thickness is obtained.
  • the glass substrates 24 are sequentially put into the etching apparatus 10 at predetermined intervals.
  • the pre-washing chamber 14 is disposed downstream of the loading section 12.
  • the pre-washing chamber 14 is configured to spray cleaning liquid onto the glass substrate 24 being transported by the transport rollers 30 from spray units 32 disposed above and below the transport rollers 30. If the etchant is brought into contact with the dried glass substrate, the glass substrate may become cloudy. For this reason, the etching apparatus 10 is configured to spray the cleaning liquid at a stage preceding the etching chamber. In the present embodiment, city water is used as the cleaning liquid.
  • the first etching chamber 161 and the second etching chamber 162 have substantially the same configuration, and are configured to spray an etching liquid onto the glass substrate 24 being transported.
  • a spray unit 32 is disposed above and below the transport roller 30, and the spray liquid is sprayed from the spray unit 32 onto the glass substrate 24 on the transport roller 30.
  • the spray unit 32 has a plurality of spray nozzles 36 arranged in a liquid feed pipe 34, and is configured such that an etchant is sprayed uniformly on the glass substrate 24.
  • the etchant is configured to be supplied from a tank or the like that contains the etchant whose composition has been adjusted.
  • the reciprocating movement of the spray unit 32 makes it possible to spray the etchant more uniformly on the glass substrate 24 and prevent the etchant from remaining on the upper surface of the glass substrate 24.
  • the arrangement of the spray unit 32 and the number of the injection nozzles 36 can be appropriately changed according to the size of the substrate to be processed and the etching amount.
  • the etching solution sprayed in each etching chamber is discharged from a discharge port 38 arranged at a lower part of the etching chamber as shown in FIG.
  • the etching liquid discharged from the discharge port 38 is collected in a tank (not shown), and is supplied from the tank to the spray unit 32 again.
  • the etching solution in the present embodiment contains at least hydrofluoric acid, and may contain an inorganic acid such as hydrochloric acid or sulfuric acid or a surfactant.
  • the composition and temperature of the etching solution can be appropriately changed according to the amount of etching and the type of the substrate to be processed.
  • the etching apparatus 10 has two etching chambers, the number of etching chambers can be changed in consideration of a substrate to be processed, an installation place, and the like.
  • the ceiling section 40 includes a transparent member 42, a frame body 44, and a protective film 46.
  • the transparent member 42 is made of a resin member that is resistant to an etchant, and has an arc shape in cross section. Examples of the resin member used as the transparent member 42 include a polyethylene-based resin, a fluorine-based resin, and a polypropylene-based resin.
  • the transparent member 42 can be processed into a desired curved surface shape by thermal processing.
  • the frame body 44 is attached to the outer wall side of the transparent member 42 in order to maintain the strength of the processing chamber.
  • the frame body 44 is made of a metal member such as iron, and is arranged in a lattice. Since the frame body 44 is attached to the outer wall side of the transparent member 42, there is no need to arrange an extra structure on the inner wall side of the transparent member 42. This eliminates the problem that the scattered etchant accumulates in the uneven portions on the inner wall side, and allows the etchant to be discharged along the wall surface of the ceiling 40. Further, since the ceiling 40 has few structures, visibility in the etching chamber can be improved.
  • the protective film 46 is a transparent film stuck on the inner surface side of the transparent member 42.
  • a polymethylpentene film can be used. Since the polymethylpentene film is a transparent film and has chemical resistance, it does not deteriorate even if it is attached to the inner wall of the etching chamber. In addition, since the surface tension is low, the etchant scattered on the inner wall is more likely to flow along the wall, so that sludge can be prevented from adhering to the inner wall of the ceiling 40.
  • the transparent member 42 is provided with a window 50 that can be opened and closed (see FIG. 1B).
  • the window 50 has a packing 52 disposed at a peripheral edge thereof, and is configured so that acidic gas does not flow out of the etching chamber. Since the window 50 is also formed of the same material as the transparent member 42, the visibility does not decrease. By arranging the window 50, maintenance of the spray unit 32 disposed above the etching chamber is facilitated.
  • the housing of the etching chamber including the partition walls is formed of a resin having hydrofluoric acid resistance such as polyvinyl chloride.
  • the partition wall is formed with a slit portion 28 that connects the two processing chambers so that the glass substrate 24 passes therethrough.
  • the slit portion 28 is formed to a height such that the glass substrate 24 can pass through, and is preferably formed to a height of 4 to 10 mm.
  • the post-washing chamber 18 is disposed after the third etching chamber 163.
  • the post-washing chamber 18 is configured to wash away the etchant by injecting the washing liquid from above and below the glass substrate 24 similarly to the pre-washing chamber 14.
  • As the cleaning liquid city water is used similarly to the pre-washing chamber 14.
  • An air knife 26 is disposed at the most downstream part of the post-cleaning chamber 18.
  • the air knife 26 is configured to eject air to the glass substrate 24 to remove the cleaning liquid attached to the surface.
  • the glass substrate 24 that has been dried by the air knife 26 is collected at the unloading section 20.
  • the etching apparatus 10 can perform an etching process by passing the glass substrate 24 through the pre-washing chamber 14, the first etching chamber 161, the second etching chamber 162, and the post-washing chamber 18.
  • the glass substrate 24 can be thinned to, for example, about 0.05 to 0.3 mm by being put into the etching apparatus 10 once or a plurality of times. Further, since the ceiling portion 40 of each etching chamber is formed of the transparent member 42, it is easy to check the state of the glass substrate 24 during the etching process, and it is determined whether or not a problem occurs during the thinning process. Is easy.
  • the load applied to the ceiling portion 40 can be dispersed, so that the ceiling portion 40 is formed using the transparent resin material 42 with almost no reinforcing member disposed. can do.
  • the transparent resin 42 By using the transparent resin 42, the visibility of the inside of the etching chamber can be improved, and the contamination of the wall surface of the etching chamber due to the scattering of the etchant can be suppressed.
  • a glass substrate has been described as an example, but the etching apparatus according to the present invention is not limited to etching a glass substrate.
  • a laminated substrate in which a semiconductor substrate or a glass substrate and a resin substrate are laminated can be processed.
  • an etching solution corresponding to the substrate to be processed may be prepared.

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Abstract

[Problem] To provide an etching device that performs etching on a to-be-processed substrate such as a glass substrate while said to-be-processed substrate is being transferred, and that is capable of preventing the interior of a processing chamber from being soiled. [Solution] This etching device 10 is configured to spray an etching liquid on a glass substrate 24 being transferred in a prescribed direction, and is provided with a conveyor roller 30, a spray unit 32, and a plurality of etching chambers 161, 162. The conveyor roller 30 is configured to transfer the glass substrate 24 toward a prescribed direction. The spray unit 32 is configured to spray an etching liquid on the glass substrate 24 positioned on the conveyor roller 30. The etching chambers 161, 162 are configured to house therein at least the conveyor roller 30 and the spray unit 32, and have a transparent ceiling part 40 having an arc-shaped cross-section.

Description

エッチング装置Etching equipment
　本発明は、ガラス基板等の被処理基板のエッチング装置に関し、特に被処理基板に対してエッチング液を噴射する枚葉式のエッチング装置に関する。 The present invention relates to an apparatus for etching a substrate to be processed such as a glass substrate, and more particularly, to a single wafer type etching apparatus for spraying an etching solution onto a substrate to be processed.
　液晶ディスプレイ等のフラットパネルディスプレイは、近年、薄型化の要請がますます強くなっている。フラットパネルディスプレイパネルの製造プロセスでは、２枚のガラス基板で液晶層等の画像表示に必要な機能層を封止することによって製造される。薄型ディスプレイを提供するためには、エッチングプロセスによってガラス基板を薄型化することが有効である。 フ ラ ッ ト In recent years, demands for thinner flat panel displays such as liquid crystal displays have been increasing. In a flat panel display panel manufacturing process, a flat panel display panel is manufactured by sealing a functional layer required for image display such as a liquid crystal layer with two glass substrates. In order to provide a thin display, it is effective to make the glass substrate thin by an etching process.
　エッチングプロセスは、ガラス基板をエッチング液と接触させるウェットエッチング処理が一般的に採用されている。ウェットエッチング処理は、枚葉式エッチングと浸漬式エッチングに大別される。枚葉式エッチングは、搬送されているガラス基板に対してスプレイ等を用いてエッチング液を噴射する方式である。浸漬式エッチングは、複数のガラス基板が保持された治具を、エッチング液が収容されたエッチング槽に浸漬することによって処理される。特に、枚葉式エッチングは、浸漬式エッチングよりもガラス基板の薄型化に有利とされており、近年では枚葉式エッチングの需要が増大している。 The etching process generally employs a wet etching process in which a glass substrate is brought into contact with an etching solution. Wet etching is roughly classified into single wafer etching and immersion etching. Single-wafer etching is a method in which an etching solution is sprayed onto a glass substrate being transported by using a spray or the like. The immersion etching is performed by immersing a jig holding a plurality of glass substrates in an etching bath containing an etching solution. In particular, single-wafer etching is considered to be more advantageous for thinning a glass substrate than immersion etching, and in recent years, the demand for single-wafer etching has been increasing.
　また、枚葉式エッチング装置は、処理チャンバ内で被処理基板を処理するため、装置外にエッチング液が飛散したり、フッ酸等の酸性ガスが装置外に漏えいしたりするおそれが少ない（例えば、特許文献１参照）。このため、作業員の安全面や作業環境においても、枚葉式エッチング装置は優れているとされていた。 Further, in the single-wafer etching apparatus, since a substrate to be processed is processed in a processing chamber, there is little possibility that an etchant scatters outside the apparatus or an acid gas such as hydrofluoric acid leaks outside the apparatus (for example, , Patent Document 1). For this reason, the single wafer type etching apparatus is considered to be excellent also in terms of worker safety and working environment.
特開２００５－０１５９１３号公報JP 2005-015913 A
　しかし、処理チャンバ内では、噴射されたエッチング液が飛散して内壁に付着したり、処理チャンバ内でエッチング液が気化したガスが充満したりしている。また、エッチング液は、ガラス基板と反応することで、不溶性生成物であるスラッジが生成される。このため、内壁に付着したエッチング液や酸性ガスが乾燥することにより、スラッジが処理チャンバ内に固着し、配管や排気口の詰まりが発生するという問題があった。 However, in the processing chamber, the jetted etchant is scattered and adheres to the inner wall, or the etching chamber is filled with a gas vaporized by the etchant. In addition, the etchant reacts with the glass substrate to generate sludge, which is an insoluble product. For this reason, there is a problem that the sludge adheres to the inside of the processing chamber due to the drying of the etching solution or the acidic gas attached to the inner wall, and the clogging of the piping and the exhaust port occurs.
　また、天井部に付着したエッチング液が重力の影響により落下することで、被処理基板に付着するという場合があった。この場合、エッチング液中のスラッジがガラス基板の表面に付着してしまい、エッチングムラが生じることがあった。このようなエッチングムラは、ガラス基板の板厚が薄くなればなるほど、品質面で問題になるおそれが高くなる。 エ ッ チ ン グ Furthermore, the etchant attached to the ceiling may fall down due to the influence of gravity and adhere to the substrate to be processed. In this case, sludge in the etching solution may adhere to the surface of the glass substrate, resulting in uneven etching. Such etching unevenness is more likely to become a quality problem as the thickness of the glass substrate becomes thinner.
　本発明の目的は、処理チャンバ内のエッチング液や酸性ガスに起因する処理チャンバの汚損を防止することが可能な枚葉式のエッチング装置を提供することである。 An object of the present invention is to provide a single-wafer etching apparatus capable of preventing the processing chamber from being stained by an etching solution or an acidic gas in the processing chamber.
　本発明に係るエッチング装置は、所定方向に搬送されている被処理基板に対してエッチング液を噴射するように構成されたエッチング装置であり、搬送路、スプレイユニットおよび処理チャンバを備えている。 The etching apparatus according to the present invention is an etching apparatus configured to inject an etching solution onto a substrate to be processed being transported in a predetermined direction, and includes a transport path, a spray unit, and a processing chamber.
　搬送路は、被処理基板を所定の搬送方向に向かって搬送するように構成される。スプレイユニットは、搬送路上の被処理基板に対してエッチング液を噴射するように構成される。処理チャンバは、搬送路およびスプレイユニットを少なくとも内部に収容するように構成され、断面視円弧状でかつ透明性を備えた天井部を少なくとも有する。ここで断面視円弧状とは、搬送方向に直交する断面の形状が円弧状を呈することを意味している。 The transfer path is configured to transfer the substrate to be processed in a predetermined transfer direction. The spray unit is configured to spray the etching liquid onto the substrate to be processed on the transport path. The processing chamber is configured to house at least the transfer path and the spray unit therein, and has at least a ceiling having an arc shape in cross section and having transparency. Here, the arc shape in a sectional view means that the shape of the cross section orthogonal to the transport direction has an arc shape.
　本発明によると、処理チャンバ内で飛散したエッチング液が断面視円弧状の天井部を滑り落ちるため、処理チャンバ内にエッチング液が付着して、スラッジとして固着したり、内壁に付着したエッチング液が被処理基板に落下したりするといった不具合を防止することが可能になる。さらに、天井部が透明性を備えることによって、エッチング処理が行われている被処理基板を視認し易くなる。これにより、エッチング処理中に不具合が生じた場合などにおいても、被処理基板の確認作業が容易になる。 According to the present invention, since the etching solution scattered in the processing chamber slides down the ceiling in an arc shape in cross section, the etching solution adheres to the processing chamber and adheres as sludge, or the etching solution adheres to the inner wall. It is possible to prevent a problem such as dropping on a processing substrate. Further, by providing the ceiling with transparency, it becomes easy to visually recognize the substrate to be processed on which the etching process is performed. This facilitates the work of checking the substrate to be processed even when a problem occurs during the etching process.
　また、天井部は、透明樹脂で形成されており、透明樹脂材の内壁にポリメチルペンテンフィルムが貼り付けられていることが好ましい。透明樹脂を用いることで、天井部の曲面形状の形成が容易になる。また、天井部を断面視円弧状にすることにより、天井部に加わる荷重を分散させることができるので、天井部に使用する補強材を削減することができる。天井部の構造物を削減することにより、天井部にエッチング液が溜まることを抑制できる。また、ポリメチルペンフィルムを内壁に貼り付けることにより、透明性を維持しつつ、天井部の耐薬品性をさらに向上させることができる。さらに、ポリメチルペンテンは、低表面張力であるため、エッチング液が天井部に沿って流れ落ちやすくなる。 The ceiling is preferably formed of a transparent resin, and a polymethylpentene film is preferably attached to the inner wall of the transparent resin material. By using a transparent resin, it becomes easy to form a curved shape of the ceiling. Further, by making the ceiling part arc-shaped in cross section, the load applied to the ceiling part can be dispersed, so that the reinforcing material used for the ceiling part can be reduced. By reducing the number of structures on the ceiling, accumulation of the etching liquid on the ceiling can be suppressed. Further, by attaching the polymethyl pen film to the inner wall, the chemical resistance of the ceiling can be further improved while maintaining the transparency. Furthermore, since polymethylpentene has a low surface tension, the etching solution easily flows down along the ceiling.
　また、スプレイユニットが、被処理基板の搬送方向と直交する方向に沿ってスライドすることが好ましい。スプレイユニットをスライドさせることによって、被処理基板へエッチング液を均一に噴射することが可能になり、エッチングムラが生じるおそれを軽減することが可能になる。さらに、天井部が断面視円弧状を呈しているため、スプレイユニットの可動領域を確保することが可能になる。 It is preferable that the spray unit slides in a direction perpendicular to the direction in which the substrate to be processed is transported. By sliding the spray unit, the etching liquid can be uniformly sprayed onto the substrate to be processed, and the possibility of uneven etching can be reduced. Furthermore, since the ceiling has an arc shape in cross section, it is possible to secure a movable area of the spray unit.
　本発明によれば、処理チャンバ内で飛散したエッチング液や酸性ガスによる処理チャンバの汚損を防止することが可能な枚葉式エッチング装置を提供することが可能になる。 According to the present invention, it is possible to provide a single-wafer etching apparatus capable of preventing the processing chamber from being stained by an etching solution or an acidic gas scattered in the processing chamber.
本発明の一実施形態に係るエッチング装置の概略図である。It is a schematic diagram of an etching device concerning one embodiment of the present invention. 本発明の一実施形態に係るエッチング装置の概略側面図である。1 is a schematic side view of an etching apparatus according to an embodiment of the present invention. 本発明の一実施形態に係るエッチングチャンバの構成を示す図である。FIG. 2 is a diagram illustrating a configuration of an etching chamber according to an embodiment of the present invention.
　ここから、図面を用いて本発明の一実施形態について説明する。図１（Ａ）および図１（Ｂ）は、本実施形態に係るガラス基板のエッチング装置１０の概略図ある。エッチング装置１０は、搬入部１２、前水洗チャンバ１４、第１のエッチングチャンバ１６１、第２のエッチングチャンバ１６２、後水洗チャンバ１８、搬出部２０および搬送ローラ３０を備えている。 か ら Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIGS. 1A and 1B are schematic diagrams of a glass substrate etching apparatus 10 according to the present embodiment. The etching apparatus 10 includes a carry-in unit 12, a pre-washing chamber 14, a first etching chamber 161, a second etching chamber 162, a post-washing chamber 18, an unloading unit 20, and a transport roller 30.
　搬送ローラ３０は、図２に示すように、エッチング装置１０の長さ方向に沿って配置されており、ガラス基板２４を水平方向に搬送するように構成される。搬送ローラ３０は、図２に示すように、ガラス基板２４の搬送方向に沿って一定間隔で配置され、ガラス基板２４を下方から支持することによって搬送するように構成される。搬送ローラ３０は、特許請求の範囲に記載の搬送路に相当する。ガラス基板２４の搬送速度は、ガラス基板２４の大きさや板厚、エッチング液の噴射圧力、エッチング液の組成等を考慮して、適宜設定することが好ましい。エッチング装置１０は、搬送ローラ３０によって搬送されているガラス基板２４に対して、エッチング液を噴射することによって薄型化等のエッチング処理を行うように構成される。 (2) The transport roller 30, as shown in FIG. 2, is arranged along the length direction of the etching apparatus 10, and is configured to transport the glass substrate 24 in the horizontal direction. As shown in FIG. 2, the transport rollers 30 are arranged at regular intervals in the transport direction of the glass substrate 24, and are configured to transport the glass substrate 24 by supporting it from below. The transport roller 30 corresponds to a transport path described in the claims. The transport speed of the glass substrate 24 is preferably set as appropriate in consideration of the size and thickness of the glass substrate 24, the jetting pressure of the etching solution, the composition of the etching solution, and the like. The etching apparatus 10 is configured to perform an etching process such as thinning by spraying an etchant on the glass substrate 24 being transported by the transport roller 30.
　搬入部１２は、ガラス基板２４を搬送ローラ３０に載置することによってガラス基板２４をエッチング装置１０に導入するように構成される。ガラス基板２４は、搬送ローラ３０に水平方向に搬送されながら各チャンバを通過することによってエッチング処理が行われ、所望の板厚になるまでエッチング処理される。ガラス基板２４は、所定間隔を設けて順次エッチング装置１０に投入される。 The loading unit 12 is configured to introduce the glass substrate 24 into the etching apparatus 10 by placing the glass substrate 24 on the transport roller 30. The glass substrate 24 is etched by passing through each chamber while being transported in the horizontal direction by the transport roller 30, and is etched until a desired thickness is obtained. The glass substrates 24 are sequentially put into the etching apparatus 10 at predetermined intervals.
　前水洗チャンバ１４は、搬入部１２の後段に配置されている。前水洗チャンバ１４は、搬送ローラ３０によって搬送されているガラス基板２４に対して、搬送ローラ３０の上下に配置されたスプレイユニット３２より洗浄液を噴射するように構成される。乾燥したガラス基板に対してエッチング液を接触させてしまうと、ガラス基板が白濁してしまうおそれがある。このため、エッチング装置１０では、エッチングチャンバの前段にて洗浄液を噴射するように構成される。本実施形態では、洗浄液として市水を使用している。 The pre-washing chamber 14 is disposed downstream of the loading section 12. The pre-washing chamber 14 is configured to spray cleaning liquid onto the glass substrate 24 being transported by the transport rollers 30 from spray units 32 disposed above and below the transport rollers 30. If the etchant is brought into contact with the dried glass substrate, the glass substrate may become cloudy. For this reason, the etching apparatus 10 is configured to spray the cleaning liquid at a stage preceding the etching chamber. In the present embodiment, city water is used as the cleaning liquid.
　第１のエッチングチャンバ１６１および第２のエッチングチャンバ１６２は、実質的に同一の構成であり、搬送されているガラス基板２４にエッチング液を噴射するように構成される。各エッチングチャンバ１６１,１６２においては、搬送ローラ３０の上下にスプレイユニット３２が配置されており、スプレイユニット３２より搬送ローラ３０上のガラス基板２４にエッチング液が噴射される。 {Circle around (1)} The first etching chamber 161 and the second etching chamber 162 have substantially the same configuration, and are configured to spray an etching liquid onto the glass substrate 24 being transported. In each of the etching chambers 161 and 162, a spray unit 32 is disposed above and below the transport roller 30, and the spray liquid is sprayed from the spray unit 32 onto the glass substrate 24 on the transport roller 30.
　スプレイユニット３２は、送液配管３４に複数の噴射ノズル３６が配置されており、ガラス基板２４に均一にエッチング液が噴射されるように構成される。エッチング液は、組成が調整されたエッチング液が収容されたタンク等から供給されるように構成される。スプレイユニット３２が往復移動することによって、ガラス基板２４により均一にエッチング液を噴射するとともに、ガラス基板２４の上面にエッチング液が滞留するのを防止することができる。なお、スプレイユニット３２の配置や噴射ノズル３６の数は被処理基板の大きさやエッチング量に応じて、適宜変更することができる。 The spray unit 32 has a plurality of spray nozzles 36 arranged in a liquid feed pipe 34, and is configured such that an etchant is sprayed uniformly on the glass substrate 24. The etchant is configured to be supplied from a tank or the like that contains the etchant whose composition has been adjusted. The reciprocating movement of the spray unit 32 makes it possible to spray the etchant more uniformly on the glass substrate 24 and prevent the etchant from remaining on the upper surface of the glass substrate 24. In addition, the arrangement of the spray unit 32 and the number of the injection nozzles 36 can be appropriately changed according to the size of the substrate to be processed and the etching amount.
　各エッチングチャンバで噴射されたエッチング液は、図３に示すように、エッチングチャンバの下部に配置された排出口３８より排出される。排出口３８から排出されたエッチング液は、不図示のタンクに回収され、タンクから再びスプレイユニット３２に供給されるように構成される。 (3) The etching solution sprayed in each etching chamber is discharged from a discharge port 38 arranged at a lower part of the etching chamber as shown in FIG. The etching liquid discharged from the discharge port 38 is collected in a tank (not shown), and is supplied from the tank to the spray unit 32 again.
　本実施形態におけるエッチング液は、少なくともフッ酸が含まれており、塩酸や硫酸等の無機酸や界面活性剤が含まれていてもよい。エッチング液の組成や液温はエッチング量や被処理基板の種類に応じて適宜変更することが可能である。また、エッチング装置１０は、２つのエッチングチャンバを有しているが、エッチングチャンバの数は被処理基板や設置場所等を考慮して変更することが可能である。 エ ッ チ ン グ The etching solution in the present embodiment contains at least hydrofluoric acid, and may contain an inorganic acid such as hydrochloric acid or sulfuric acid or a surfactant. The composition and temperature of the etching solution can be appropriately changed according to the amount of etching and the type of the substrate to be processed. Although the etching apparatus 10 has two etching chambers, the number of etching chambers can be changed in consideration of a substrate to be processed, an installation place, and the like.
　各エッチングチャンバ１６１,１６２は、図１（Ｂ）および図３に示すように、断面視円弧状の天井部４０により覆われている。天井部４０は、透明部材４２、枠体４４および保護フィルム４６を備えている。透明部材４２は、エッチング液に耐性のある樹脂部材で構成されており、断面視円弧状を呈する。透明部材４２として使用する樹脂部材の一例としては、ポリエチレン系樹脂、フッ素系樹脂、ポリプロピレン系樹脂等が挙げられる。透明部材４２は、熱加工により所望の曲面形状に加工することが可能である。 Each of the etching chambers 161 and 162 is covered with a ceiling part 40 having an arcuate cross section as shown in FIG. 1B and FIG. The ceiling section 40 includes a transparent member 42, a frame body 44, and a protective film 46. The transparent member 42 is made of a resin member that is resistant to an etchant, and has an arc shape in cross section. Examples of the resin member used as the transparent member 42 include a polyethylene-based resin, a fluorine-based resin, and a polypropylene-based resin. The transparent member 42 can be processed into a desired curved surface shape by thermal processing.
　枠体４４は、処理チャンバの強度を保つために、透明部材４２の外壁側に取り付けられている。枠体４４は、鉄等の金属部材で構成されており、格子状に配置されている。透明部材４２の外壁側に枠体４４が取り付けられているため、透明部材４２の内壁側には余計な構造物を配置する必要がなくなる。このため、飛散したエッチング液が内壁側の凹凸状の箇所に溜まるといった不具合が解消され、天井部４０の壁面に沿ってエッチング液を排出することが可能になる。さらに、天井部４０に構造物が少ないことにより、エッチングチャンバ内の視認性を向上させることもできる。 The frame body 44 is attached to the outer wall side of the transparent member 42 in order to maintain the strength of the processing chamber. The frame body 44 is made of a metal member such as iron, and is arranged in a lattice. Since the frame body 44 is attached to the outer wall side of the transparent member 42, there is no need to arrange an extra structure on the inner wall side of the transparent member 42. This eliminates the problem that the scattered etchant accumulates in the uneven portions on the inner wall side, and allows the etchant to be discharged along the wall surface of the ceiling 40. Further, since the ceiling 40 has few structures, visibility in the etching chamber can be improved.
　保護フィルム４６は、透明部材４２の内面側に貼り付けられている透明フィルムである。保護フィルム４６としては、ポリメチルペンテンフィルムを使用することができる。ポリメチルペンテンフィルムは、透明フィルムであり、耐薬品性も有しているため、エッチングチャンバの内壁に貼り付けられても劣化することがない。また、表面張力も低いため、内壁に飛散したエッチング液が壁面に沿って流れやすくなるため、天井部４０の内壁にスラッジが付着することを抑制することができる。 The protective film 46 is a transparent film stuck on the inner surface side of the transparent member 42. As the protective film 46, a polymethylpentene film can be used. Since the polymethylpentene film is a transparent film and has chemical resistance, it does not deteriorate even if it is attached to the inner wall of the etching chamber. In addition, since the surface tension is low, the etchant scattered on the inner wall is more likely to flow along the wall, so that sludge can be prevented from adhering to the inner wall of the ceiling 40.
　また、透明部材４２には、開閉可能な窓部５０が設けられている（図１（Ｂ）参照）。窓部５０は、パッキン５２が周縁部に配置されており、酸性ガスがエッチングチャンバから流出しないように構成される。窓部５０も透明部材４２と同じ素材で形成されているため、視認性が低下することもない。窓部５０を配置することにより、エッチングチャンバの上部に配置されたスプレイユニット３２のメンテナンスが容易になる。 (4) The transparent member 42 is provided with a window 50 that can be opened and closed (see FIG. 1B). The window 50 has a packing 52 disposed at a peripheral edge thereof, and is configured so that acidic gas does not flow out of the etching chamber. Since the window 50 is also formed of the same material as the transparent member 42, the visibility does not decrease. By arranging the window 50, maintenance of the spray unit 32 disposed above the etching chamber is facilitated.
　前水洗チャンバ１４および第１のエッチングチャンバ１６１等の隣接する２つの処理チャンバは、図２に示すように隔壁によって分離されている。なお、隔壁を含むエッチングチャンバの筐体（天井部４０は除く）は、ポリ塩化ビニル等の耐フッ酸性を有する樹脂によって形成される。隔壁にはガラス基板２４が通過するために、２つの処理チャンバを連通するスリット部２８が形成されている。スリット部２８は、ガラス基板２４が通過できる程度の高さに形成されており、４～１０ｍｍの高さで形成されていることが好ましい。 (2) Two adjacent processing chambers such as the pre-washing chamber 14 and the first etching chamber 161 are separated by a partition as shown in FIG. The housing of the etching chamber including the partition walls (excluding the ceiling part 40) is formed of a resin having hydrofluoric acid resistance such as polyvinyl chloride. The partition wall is formed with a slit portion 28 that connects the two processing chambers so that the glass substrate 24 passes therethrough. The slit portion 28 is formed to a height such that the glass substrate 24 can pass through, and is preferably formed to a height of 4 to 10 mm.
　後水洗チャンバ１８は、第３のエッチングチャンバ１６３の後段に配置されている。後水洗チャンバ１８は、前水洗チャンバ１４と同様にガラス基板２４に対して上下方向から洗浄液を噴射することによって、エッチング液を洗い流すように構成される。洗浄液は、前水洗チャンバ１４と同様に市水が使用されている。 (5) The post-washing chamber 18 is disposed after the third etching chamber 163. The post-washing chamber 18 is configured to wash away the etchant by injecting the washing liquid from above and below the glass substrate 24 similarly to the pre-washing chamber 14. As the cleaning liquid, city water is used similarly to the pre-washing chamber 14.
　後洗浄チャンバ１８の最下流部には、エアナイフ２６が配置されている。エアナイフ２６は、ガラス基板２４に対してエアを噴射して、表面に付着した洗浄液を除去するように構成される。エアナイフ２６により乾燥した状態となったガラス基板２４は、搬出部２０において回収される。 エ ア An air knife 26 is disposed at the most downstream part of the post-cleaning chamber 18. The air knife 26 is configured to eject air to the glass substrate 24 to remove the cleaning liquid attached to the surface. The glass substrate 24 that has been dried by the air knife 26 is collected at the unloading section 20.
　エッチング装置１０は、ガラス基板２４が前水洗チャンバ１４、第１のエッチングチャンバ１６１、第２のエッチングチャンバ１６２および後水洗チャンバ１８を通過することによって、エッチング処理を行うことが可能になる。エッチング装置１０に１回または複数回投入することで、例えば、０．０５～０．３ｍｍ程度までガラス基板２４を薄型化することが可能である。また、各エッチングチャンバの天井部４０が透明部材４２で構成されるため、エッチング処理中のガラス基板２４の様子を確認し易くなるため、薄型化処理の際に不具合が生じているか否かの確認が容易である。 The etching apparatus 10 can perform an etching process by passing the glass substrate 24 through the pre-washing chamber 14, the first etching chamber 161, the second etching chamber 162, and the post-washing chamber 18. The glass substrate 24 can be thinned to, for example, about 0.05 to 0.3 mm by being put into the etching apparatus 10 once or a plurality of times. Further, since the ceiling portion 40 of each etching chamber is formed of the transparent member 42, it is easy to check the state of the glass substrate 24 during the etching process, and it is determined whether or not a problem occurs during the thinning process. Is easy.
　また、天井部４０を断面視円弧状にすることによって、天井部４０に加わる荷重を分散することができるので、補強部材をほとんど配置することなく、透明樹脂材４２を用いて天井部４０を形成することができる。透明樹脂４２を用いることにより、エッチングチャンバ内の視認性を向上させつつ、エッチング液の飛散によるエッチングチャンバの壁面の汚損を抑制することができる。 Further, by forming the ceiling portion 40 into an arc shape in a sectional view, the load applied to the ceiling portion 40 can be dispersed, so that the ceiling portion 40 is formed using the transparent resin material 42 with almost no reinforcing member disposed. can do. By using the transparent resin 42, the visibility of the inside of the etching chamber can be improved, and the contamination of the wall surface of the etching chamber due to the scattering of the etchant can be suppressed.
　なお、本実施形態はガラス基板を例に説明したが、本発明に係るエッチング装置は、ガラス基板のエッチングに限定されるものではない。例えば、半導体基板やガラス基板と樹脂基板が積層された積層基板を処理することも可能である。これらの基板を処理する場合は、被処理基板に応じたエッチング液を調合すれば良い。 In the present embodiment, a glass substrate has been described as an example, but the etching apparatus according to the present invention is not limited to etching a glass substrate. For example, a laminated substrate in which a semiconductor substrate or a glass substrate and a resin substrate are laminated can be processed. In the case of processing these substrates, an etching solution corresponding to the substrate to be processed may be prepared.
　上述の実施形態の説明は、すべての点で例示であって、制限的なものではないと考えられるべきである。本発明の範囲は、上述の実施形態ではなく、特許請求の範囲によって示される。さらに、本発明の範囲には、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 説明 The above description of the embodiment is illustrative in all aspects and should not be construed as limiting. The scope of the present invention is defined by the terms of the claims, rather than the embodiments described above. Further, the scope of the present invention is intended to include all modifications within the meaning and scope equivalent to the claims.
　１０‐エッチング装置
　１２‐搬入部
　１４-前水洗チャンバ
　１６１‐第１のエッチングチャンバ
　１８-後水洗チャンバ
　２０‐搬出部
　２４‐ガラス基板
　３０-搬送ローラ
　３２‐スプレイユニット
　３４-送液配管
　３６-噴射ノズル
　３８-排出口
　４０-天井部
　４２‐透明部材
　４４-枠体
　４６-保護フィルム DESCRIPTION OF SYMBOLS 10-Etching apparatus 12-Incoming part 14-Pre-washing chamber 161-First etching chamber 18-Post-washing chamber 20-Unloading part 24-Glass substrate 30-Transport roller 32-Spray unit 34-Liquid supply pipe 36-Injection nozzle 38-outlet 40-ceiling 42-transparent member 44-frame 46-protective film

Claims (3)

  1. 　所定方向に搬送されている被処理基板に対してエッチング液を噴射するように構成されたエッチング装置であって、
    　前記被処理基板を所定の搬送方向に向かって搬送するように構成された搬送路と、
    　前記搬送路上の前記被処理基板に対してエッチング液を噴射するスプレイユニットと、
    　前記搬送路および前記スプレイユニットを少なくとも内部に収容するように構成された処理チャンバと、
    　前記処理チャンバが、断面視円弧状でかつ透明性を備えた天井部を少なくとも有することを特徴とするエッチング装置。     An etching apparatus configured to inject an etching solution to a substrate to be processed being transported in a predetermined direction,
    A transport path configured to transport the substrate to be processed in a predetermined transport direction,
    A spray unit that sprays an etching solution on the substrate to be processed on the transport path,
    A processing chamber configured to house the transport path and the spray unit at least therein,
    An etching apparatus, wherein the processing chamber has at least a ceiling part having an arc shape in cross section and having transparency.
  2. 　前記天井部は、透明樹脂で形成されており、前記透明樹脂材の内壁にポリメチルペンテンフィルムが貼り付けられていることを特徴とする請求項１に記載のエッチング装置。 The etching apparatus according to claim 1, wherein the ceiling is formed of a transparent resin, and a polymethylpentene film is attached to an inner wall of the transparent resin material.
  3. 　前記スプレイユニットが、前記被処理基板の搬送方向と直交する方向に沿ってスライドすることを特徴とする請求項１または２に記載のエッチング装置。 3. The etching apparatus according to claim 1, wherein the spray unit slides in a direction perpendicular to a direction in which the substrate to be processed is transported. 4.
PCT/JP2019/025660 2018-06-29 2019-06-27 Etching device WO2020004569A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237720A (en) * 1988-06-16 1990-02-07 Texas Instr Deutschland Gmbh Wet etching equipment for thin film
JPH06108270A (en) * 1992-09-30 1994-04-19 Mitsui High Tec Inc Surface treating device
JP2016225547A (en) * 2015-06-02 2016-12-28 株式会社Ｎｓｃ Spray etching device
JP2018052050A (en) * 2016-09-30 2018-04-05 株式会社Ｎｓｃ Antifouling transparent laminate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237720A (en) * 1988-06-16 1990-02-07 Texas Instr Deutschland Gmbh Wet etching equipment for thin film
JPH06108270A (en) * 1992-09-30 1994-04-19 Mitsui High Tec Inc Surface treating device
JP2016225547A (en) * 2015-06-02 2016-12-28 株式会社Ｎｓｃ Spray etching device
JP2018052050A (en) * 2016-09-30 2018-04-05 株式会社Ｎｓｃ Antifouling transparent laminate

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JP2020001974A (en) 2020-01-09

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