WO2020001550A1 - 晶片承载系统和浸没光刻设备 - Google Patents

晶片承载系统和浸没光刻设备 Download PDF

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Publication number
WO2020001550A1
WO2020001550A1 PCT/CN2019/093323 CN2019093323W WO2020001550A1 WO 2020001550 A1 WO2020001550 A1 WO 2020001550A1 CN 2019093323 W CN2019093323 W CN 2019093323W WO 2020001550 A1 WO2020001550 A1 WO 2020001550A1
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Prior art keywords
flow path
liquid
liquid flow
wafer carrying
carrying system
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PCT/CN2019/093323
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English (en)
French (fr)
Inventor
赵丹平
魏巍
罗晋
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上海微电子装备（集团）股份有限公司
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Publication of WO2020001550A1 publication Critical patent/WO2020001550A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Definitions

  • the present invention relates to the field of lithography technology, and in particular, to a wafer carrying system and an immersion lithography device.
  • lithography Modern lithography equipment is based on optical lithography, which uses an optical system to accurately project and expose the patterns on the reticle onto a photoresist-coated substrate (such as a silicon wafer).
  • Immersion lithography refers to the immersion liquid filled with water or a higher refractive index between the exposure lens and the silicon wafer to replace the corresponding air in the traditional dry lithography technology. Since the refractive index of water is larger than that of air, this makes the numerical aperture of the lens group larger, and thus a smaller characteristic line width can be obtained.
  • a conventional immersion lithography machine includes a main frame 1 supporting an illumination system 2, a projection objective 4, and a workpiece table 8.
  • a silicon wafer 7 coated with a photoresist is placed on the workpiece table 8. .
  • an immersion liquid water
  • the immersion liquid restriction mechanism 6 is also called an immersion head.
  • the work table 8 drives the silicon wafer 7 to perform high-speed scanning and stepping motions.
  • the immersion head 6 provides a stable immersion liquid in the immersion head 6 in the field of view of the projection objective 4.
  • the flow field 5 at the same time ensures that the immersion liquid flow field 5 is sealed from the outside world to ensure that the liquid does not leak.
  • the integrated circuit pattern on the reticle 3 is transferred to the silicon wafer 7 coated with the photosensitive photoresist in an imaging exposure manner through the immersion liquid in the illumination system 2, the projection objective 4, and the immersion liquid flow field 5, thereby completing the exposure.
  • the working principle of the existing immersion lithography machine is as follows: a liquid supply device 11 is provided, and an immersion liquid is supplied to the immersion head 6 through a pipeline 12 to form an immersion liquid flow field 5.
  • a liquid pressure unit and a flow control unit are provided in the liquid supply device 11 to limit the pressure and flow rate of the immersion liquid supply to a certain range.
  • a water pollution treatment unit in the liquid supply device 11
  • the water pollution is treated to meet the immersion liquid cleanliness requirements.
  • a temperature control unit in the liquid supply device 11 the water supply is processed to meet the immersion liquid temperature requirements.
  • An air supply device 13 is provided, and the immersion head 6 is communicated through a pipeline 14 for ultra-clean wet air compensation of the immersion liquid flow field 5 and the silicon wafer 7.
  • a gas-liquid recovery device 15 is provided, and is used for recovering gas and liquid through a pipeline 16 communicating with the immersion head 6.
  • the outer contour of the existing immersion head 6 is different, but the inner contour is a conical structure that matches the geometric shape of the lens of the projection objective 4.
  • the immersion liquid supplied by the liquid supply device 11 flows out through the immersion liquid supply channel in the immersion head 6 and is filled between the projection objective 4 and the silicon wafer 7.
  • the immersion liquid flows out through the immersion liquid recovery channel in the immersion head 6 and flows from the gas-liquid. Recycling equipment recycling. Therefore, an immersion liquid flow field 5 is formed between the objective lens 4 and the silicon wafer 7. It is required that the liquid in the immersion liquid field 5 be in a continuous flow state without backflow, and the composition, pressure field, velocity field, and temperature field of the liquid are transient. State and steady state changes are less than a certain range.
  • FIG. 3 In the immersion lithography, when the silicon wafer 7 moves relative to the immersion flow field 5, the meniscus at the edge of the immersion flow field 5 is stretched out, and a liquid film 51 is formed on the surface of the silicon wafer 7.
  • the protruding liquid film 51 will continuously evaporate and produce an evaporative cooling effect during the evaporation process.
  • the evaporation of the liquid film 51 is the result of the thermal movement of molecules on the surface of the liquid. Since the molecules with large kinetic energy are lost by evaporation, the average kinetic energy of the molecular movement is reduced and the liquid surface temperature is lowered.
  • the liquid film 51 must continuously absorb latent heat of vaporization during the evaporative phase change process; for example, at 1 atmosphere, 1kg of water becomes 2256kJ of heat when it becomes steam.
  • the continuous evaporation and heat absorption of the liquid film 51 will reduce the temperature of the silicon wafer 7 and directly cause thermal deformation of the silicon wafer 7; thermal deformation of the silicon wafer 7 will cause positioning errors (such as Overlay) of the silicon wafer 7 and ultimately affect the exposure performance of the device .
  • a series of temperature-controlled liquid flow path cavities are provided inside the work table 8. After the temperature-control fluid is passed through the temperature-controlled liquid flow path cavity, it is used to control the temperature of the work table 8 to compensate for the liquid film evaporation cooling on the surface of the silicon wafer 7. Adverse effects. However, during the exposure process, the workpiece table 8 will continuously perform acceleration and deceleration in different directions in the horizontal plane. The direction of movement is 81, which will cause the liquid in the workpiece table 8 to slip relative to the workpiece table 8, that is, the liquid in the workpiece table 8 will The flow velocity of the workpiece table 8 fluctuates, which will cause fluctuations in the compensation for the liquid film evaporation cooling effect on the surface of the silicon wafer 7. According to the analysis, it is found that the local temperature change of the silicon wafer 7 caused by the flow velocity fluctuation is about 0.001 ° C, which will cause the silicon wafer 7 A positioning error is generated, which ultimately affects the exposure performance of the device.
  • the purpose of the present invention is to provide a wafer carrying system and an immersion lithography equipment, so as to solve the defect that the acceleration and deceleration movement of the workpiece table during the exposure process slips on the immersion liquid and causes the temperature fluctuation of the liquid in the table.
  • the present invention provides a wafer carrying system including a workpiece table, and a plurality of liquid flow path cavities are provided inside the workpiece table, and each of the liquid flow path cavities is related to the workpiece table.
  • the central points of the horizontal plane are distributed in a symmetrical form, and temperature-control liquids of opposite directions flow through the two adjacent liquid flow path cavities.
  • each of the liquid flow path cavities is a circular ring shape when viewed vertically.
  • the vertical cross sections of the plurality of liquid flow path cavities are the same.
  • the distance between the center points of two adjacent liquid flow path cavities is less than four times the width of each of the liquid flow path cavities in the horizontal direction.
  • a vertical cross-sectional shape of each of the liquid flow path cavities is rectangular.
  • the wafer carrying system provided by the present invention further includes a plurality of enhanced heat transfer structures, and at least one of the strengthened heat transfer structures is provided on an inner surface of each of the liquid flow path cavities.
  • each of the enhanced heat transfer structures is a fin or a bump.
  • each of the liquid flow path cavities has a supply flow path for providing a temperature-controlled liquid and a recovery flow path for recovering the temperature-controlled liquid, and each of the liquid flow path cavities
  • the supply flow paths of the bodies are independent of each other, and the recovery flow paths of the liquid flow path cavities are independent of each other.
  • the wafer carrying system provided by the present invention further includes a plurality of branch flow adjusting devices, and at least one of the branch flow adjusting devices is provided on a supply flow path of each of the liquid flow path cavities,
  • the branch flow adjustment device is used to adjust a flow rate of the temperature-controlled liquid supplied to each of the liquid flow path cavities.
  • the wafer carrying system provided by the present invention further includes a flow divider, and the temperature-control liquid in the supply flow path of each of the liquid flow path cavities is temperature-controlled liquid from the outside through the flow divider. Diverted from the supply source.
  • the wafer carrying system provided by the present invention further includes a main flow regulating device, and the main flow regulating device is provided between the shunt and the external temperature-controlling liquid supply source.
  • the present invention also provides an immersion lithography apparatus, which includes a main frame, an illumination system, a projection objective, an immersion head, and the wafer carrying system as described above, the illumination system, the projection objective, and the wafer.
  • a carrier system is disposed on the main frame, and the immersion head is disposed between the projection objective lens and the wafer carrier system.
  • the wafer carrying system and immersion lithography equipment provided by the present invention are provided with a plurality of liquid flow path cavities through the interior of the work table, and each of the liquid flow path cavities is related to the work table.
  • the center point of the horizontal plane is distributed in a center-symmetrical form.
  • Temperature-control liquids of opposite directions flow through the two adjacent liquid flow path cavities to control the temperature of the workpiece table to compensate for the temperature loss caused by the liquid film evaporation refrigeration on the wafer surface.
  • FIG. 1 is a schematic structural diagram of a conventional immersion lithography machine
  • FIG. 2 is a schematic structural diagram of an immersion liquid control system of a conventional immersion lithography machine
  • FIG. 3 is a schematic diagram of a change relationship between an immersion liquid phase and a workpiece table during a conventional exposure process
  • FIG. 4 is a schematic structural diagram of a workpiece table of the present invention.
  • FIG. 5 is an enlarged sectional view taken along the line A-A or B-B in FIG. 4;
  • FIG. 6 is a schematic diagram of an enhanced heat transfer structure in a liquid flow path cavity
  • FIG. 7 to 8 are schematic structural diagrams of a liquid control system of a liquid flow path cavity
  • FIG. 9 is a schematic diagram of another enhanced heat transfer structure in a liquid flow path cavity.
  • FIG. 4 is a schematic structural diagram of a workpiece table of the present invention.
  • an embodiment of the present invention provides a wafer carrying system, including a workpiece table 81, and a plurality of mutually independent liquid flow path cavities are uniformly distributed inside the workpiece table 81, that is, each The liquid flow path cavity is provided with separate inlets IN and outlets OUT, and two adjacent liquid flow path cavities have temperature-controlling liquids flowing in opposite directions.
  • each of the liquid flow path cavities extends along the circumferential direction of the workpiece table 81, and a plurality of mutually independent liquid flow path cavities are uniformly distributed along the radial direction of the work table 81.
  • 6 liquid flow path cavities are shown in FIG.
  • the temperature-control liquid in the first direction flows through the cavity of the odd-numbered liquid flow path; the temperature-control liquid in the second direction flows through the cavity in the even-numbered liquid flow path.
  • the two directions are opposite. That is, the liquid flow direction in the odd-numbered liquid flow path cavities 8101, 8103, and 8105 is counterclockwise, and the liquid flow direction in the even-numbered liquid flow path cavities 8202, 8104, and 8106 is clockwise. The direction of the arrow inside the lumen is shown.
  • the temperature of the workpiece table 81 is controlled by temperature-controlling liquid flowing in a plurality of liquid flow path cavities provided inside the workpiece table 81, so as to compensate the liquid film evaporation cooling of the liquid surface immersed in the immersion lithography equipment
  • the resulting temperature loss is the compensation for heat loss.
  • the liquid sliding direction is always the same as one of the liquid flow directions in the liquid flow path cavity, which is the same as the liquid sliding direction.
  • the temperature-controlled liquid in the liquid flow path cavity offsets the fluctuation of the compensation temperature caused by the liquid slippage when the workpiece table 81 performs acceleration and deceleration in different directions in the horizontal plane. That is, when the liquid slides counterclockwise, the flow direction of the liquid causing the slippage is the same as that of the temperature-controlled liquid in the cavity of the odd-numbered liquid flow path. When the liquid slides clockwise, the slipping liquid is generated.
  • the flow direction of is the same as the flow direction of the temperature-controlled liquid in the even-numbered liquid flow path cavity, thereby offsetting the temperature fluctuation caused by the liquid slippage when the workpiece table 81 performs acceleration and deceleration in different directions in the horizontal plane. Therefore, the embodiment of the present invention overcomes the wafer positioning error and improves the exposure performance of the lithographic equipment.
  • each liquid flow path cavity is distributed symmetrically about a horizontal center point of the workpiece table 81 as a center.
  • the shape of the liquid flow path cavity in the embodiment of the present invention is a circular ring shape when viewed vertically.
  • a plurality of circular liquid flow path cavities are concentrically distributed outward at the horizontal center point of the table 81.
  • the liquid flow path cavity outward from the horizontal center point of the table 81 includes the liquid flow path cavity in order. 8106, a liquid flow path cavity 8105, a liquid flow path cavity 8104, a liquid flow path cavity 8103, a liquid flow path cavity 8102, and a liquid flow path cavity 8101. That is, the circular ring size of the liquid flow path cavity outward from the horizontal center point of the table 81 increases in sequence.
  • the shape of the liquid flow path cavity in the embodiment of the present invention in a vertical plan view may also be a regular polygonal shape such as a regular hexagon or a regular octagon.
  • Fig. 5 is an enlarged sectional view taken along the line A-A or B-B in Fig. 4. Please refer to FIG. 5.
  • the vertical cross-section of each liquid flow path cavity is the same, that is, the height of each liquid flow path cavity (the channel portion for liquid circulation) and The width is the same.
  • the vertical cross section of each liquid flow path cavity is rectangular. That is, the vertical cross section of the inlet IN and the cross section of the outlet OUT of the six liquid flow path cavities are the same.
  • outlet cross section 8101a and the inlet cross section 8101b of the liquid flow path cavity 8101, the outlet cross section 8102a and the inlet cross section 8102b of the liquid flow path cavity 8102, the outlet cross section 8103a and the inlet cross section 8103b of the liquid flow path cavity 8103, and the liquid flow path cavity The outlet section 8104a and the inlet section 8104b of the body 8104, the outlet section 8105a and the inlet section 8105b of the liquid flow path cavity 8105, and the outlet section 8106a and the inlet section 8106b of the liquid flow path cavity 8106.
  • the cross-sectional shape and cross-sectional area of the outlet cross section and the inlet cross section are completely the same.
  • the vertical cross section of the liquid flow path cavity in the embodiment of the present invention is rectangular, which has the advantages of simple structure and convenient manufacturing.
  • the rectangle includes a rectangle and a square.
  • the shape of the vertical cross-section of the liquid flow path cavity may also be circular or regular polygon.
  • FIG. 6 is a schematic diagram of an enhanced heat transfer structure in a liquid flow path cavity
  • FIG. 9 is a schematic diagram of another enhanced heat transfer structure in a liquid flow path cavity.
  • the inner surface of each liquid flow path cavity is provided with several enhanced heat transfer structures, wherein the enhanced heat transfer structure may be a discrete structure or a continuous structure.
  • the following uses a seventh liquid flow path cavity 8107 that is different from the above six liquid flow path cavities 8101 to 8106.
  • each fluid flow path cavity has An enhanced heat transfer structure may be provided.
  • the seventh liquid flow path cavity 8107 is only an example of the embodiment of the present invention and is not a limitation of the present invention. Please refer to FIG. 6.
  • the reinforced heat transfer structure according to the embodiment of the present invention is a discrete structure.
  • the left inner surface 8108 and the right inner surface 8109 of the liquid flow path cavity 8107 are provided with uniformly spaced ribs 8112 spaced apart.
  • the ribs 8112 are rectangular. Shape, and no ribs are provided on the upper surface 8110 and the lower surface 8111 of the liquid flow path cavity 8107. Referring to FIG.
  • the enhanced heat transfer structure of the embodiment of the present invention is a discrete structure, which is a uniformly spaced distribution of bumps 8122, which is provided only on the left inner surface 8108 and the right inner surface 8109 of the liquid flow path cavity 8107.
  • the upper surface 8110 and the lower surface 8111 of the liquid flow path cavity 8107 are not provided with bumps.
  • the bump 8122 has an arc-shaped surface, which generates a small resistance and facilitates the flow of the liquid in the cavity 8107.
  • the liquid flow path cavity with the enhanced heat transfer structure (hereinafter referred to as the cavity) can increase the contact surface area of the temperature-controlled liquid and the cavity, thereby transmitting the temperature of the liquid in the cavity uniformly and quickly through the reinforced heat transfer structure on the side surface.
  • the upper surface of the work table quickly forms a uniform and stable temperature.
  • the essence of the enhanced heat transfer structure is heat energy exchange.
  • the temperature of the circulating liquid is quickly exchanged with the temperature of the table through the strengthened heat transfer structure, so that the temperature of the table 81 is more stable and uniform.
  • the enhanced heat transfer structure is provided only on the side surface of the cavity, and is not provided on the upper surface and the lower surface of the cavity.
  • the enhanced heat transfer structure can achieve anisotropic heat transfer coefficients with different horizontal and vertical heat transfer coefficients.
  • the strengthened heat transfer structure is provided on the left inner surface and right inner surface of the liquid flow path cavity distributed concentrically. The larger the horizontal heat transfer coefficient of the liquid flow path cavity is, the better the temperature distribution in the horizontal plane is.
  • An embodiment of the present invention further provides an immersion lithographic apparatus, which includes a main frame, an illumination system, a projection objective, an immersion head, and a wafer carrying system as described above.
  • the liquid flow path cavity provided in the embodiment of the present invention includes a supply flow path 81131 for providing temperature-controlled liquid and a recovery of temperature-controlled liquid.
  • the flow path 81132 is independent of the supply flow paths 81131 of different liquid flow path cavities, and the recovery flow paths 81132 of the different liquid flow path cavities are independent of each other.
  • a branch flow adjustment device 81133 is provided on the supply flow path of each liquid flow path cavity, and is used to adjust the flow rate of the temperature-controlled liquid supplied to each liquid flow path cavity.
  • the temperature control liquid in the supply flow path 81131 of each liquid flow path cavity is divided from an external temperature control liquid supply source through a diverter.
  • a main flow regulating device 81103 is provided between the diverter and an external temperature-controlled liquid supply source.
  • FIG. 7 is a separate control scheme of the liquid control system of each liquid flow path cavity.
  • FIG. 8 is a hybrid control scheme in which the overall control scheme of the liquid control system and the individual control schemes of several liquid flow chambers are combined.
  • three liquid flow path cavities are used to describe the mixing control scheme, but it is not limited to three.
  • the three liquid flow path cavities are respectively denoted by reference numerals 8114, 8115, and 8116 which are different from the above embodiments. include:
  • the liquid supply flow path 81141 and the liquid recovery flow path 81142 communicating with the liquid flow path cavity 8114 are used for the branch flow adjustment device 81143 on the liquid supply flow path 81141;
  • a liquid supply flow path 81151 and a liquid recovery flow path 81152 communicating with the liquid flow path cavity 8115 are used for the branch flow adjustment device 81153 on the liquid supply flow path 81151;
  • a liquid supply flow path 81161 and a liquid recovery flow path 81162 communicating with the liquid flow path cavity 8116 are used for the branch flow adjustment device 81163 on the liquid supply flow path 81161;
  • All liquid supply flow paths are connected to the total liquid supply flow path 81101 through a splitter, and all the liquid recovery flow paths are connected to the total liquid recovery flow path 81102 through a return flow device, and the total liquid supply flow path 81101 is provided with a main flow adjustment Device 81103.
  • the shunt and the return flow are of the same structure with different installation directions.
  • the shunt and the return flow may be multi-channel pipes such as tees.
  • a temperature regulator and / or a flow rate regulator may be provided in each liquid supply flow path and / or the total liquid supply flow path.
  • the temperature regulator is used to regulate the temperature of the temperature control liquid.
  • the flow rate regulator can use pressure adjustment to provide different liquid flow rates through different pressure settings.
  • the overall control scheme in the liquid control system of several liquid flow path cavities in the embodiment of the present invention is to remove all branch flow adjustment devices on the liquid flow path cavity in the mixed control scheme, and only retain the total liquid supply flow path 81101. ⁇ ⁇ Main flow adjustment device 81103.

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Abstract

提供了一种晶片承载系统，其包括工件台（81），工件台（81）的内部设置有若干条液体流路腔体，每条液体流路腔体以关于工件台（81）的水平面中心点呈中心对称的形式分布，相邻两条液体流路腔体内流通有方向相反的温控液体。还提供了一种浸没光刻设备，其包括主框架、照明系统、投影物镜、浸没头以及晶片承载系统。解决了曝光过程中工件台的加减速运动对浸液滑移而导致工作台内液体的温度波动的缺陷，具有提高光刻设备的曝光性能的效果。

Description

晶片承载系统和浸没光刻设备 技术领域
本发明涉及光刻技术领域，特别涉及一种晶片承载系统和浸没光刻设备。
背景技术
现代光刻设备以光学光刻为基础，它利用光学系统将掩膜版上的图形精确地投影曝光到涂过光刻胶的衬底(例如：硅片)上。浸没式光刻是指在曝光镜头与硅片之间充满水或更高折射率的浸没液体，以取代传统干式光刻技术中对应的空气。由于水的折射率比空气大，这就使得透镜组数值孔径增大，进而可获得更加小的特征线宽。请参考图1，现有的浸没式光刻机，包括主框架1支撑一照明系统2、一投影物镜4和一工件台8，工件台8上放置有一涂有感光光刻胶的硅片7。该浸没式光刻机，将浸液(水)通过浸液限制机构6填充在投影物镜4和硅片7之间。其中浸液限制机构6也称为浸没头。工作时，工件台8带动硅片7作高速的扫描、步进动作，浸没头6根据工件台8的运动状态，在投影物镜4的视场范围，在浸没头6内提供一个稳定的浸液流场5，同时保证浸液流场5与外界的密封，保证液体不泄漏。掩模版3上的集成电路图形通过照明系统2、投影物镜4和浸液流场5中的浸液，以成像曝光的方式转移到涂有感光光刻胶的硅片7上，从而完成曝光。
请参考图2，现有的浸没式光刻机的工作原理如下：设置供液设备11，通过管路12向浸没头6供给浸液形成浸液流场5。在供液设备11中设置液体压力单元和流量控制单元，将浸液供给的压力、流量限制在一定范围内。通过在供液设备11中设置水污染处理单元，将水中污染处理至符合浸液洁净要求。通过在供液设备11中设置温度控制单元，将供水处理至符合浸液温度要求。设置供气设备13，通过管路14连通浸没头6，用于浸液流场5及硅片7的超洁净湿空气补偿。设置气液回收设备15，通过与浸没头6连通的管路16用于回收气体和液体。在供气设备13与气液回收设备15中设置超洁净湿空气压力、流量控制单元，将供气压力、流量控制在一定范围之内，设置气液回收压力、流量控制单元，将气液回收压力和流量控制在一定范围之内；设 置超洁净湿空气污染控制单元，将超洁净湿空气中污染处理至符合要求；设置超洁净湿空气温度和湿度控制单元，将超洁净湿空气处理至符合温度和湿度要求。
请参考图2，由于现有的浸没头6的外部轮廓形式不一，但内部轮廓是与投影物镜4的镜头呈几何形状匹配的锥形结构。供液设备11供给的浸液通过浸没头6内浸液供给流道流出后填充于投影物镜4和硅片7之间，浸液通过浸没头6内浸液回收流道流出后，由气液回收设备回收。因此，在物镜4和硅片7之间形成了浸液流场5，要求浸液流场5中的液体处于持续流动状态，无回流，且液体的成分、压力场、速度场、温度场瞬态和稳态变化小于一定范围。
请参考图3，浸没式光刻中，当硅片7相对浸液流场5运动时，浸液流场5边缘弯液面会被拉伸出来，在硅片7表面形成液膜51，拉伸出来的液膜51会不断蒸发并在蒸发过程中产生蒸发制冷作用。液膜51的蒸发是液体表面分子热运动的结果，由于蒸发失去了动能较大的分子，使分子运动的平均动能减小而降低了液面温度。液膜51在蒸发相变过程中须不断吸收汽化潜热；例如，在一个大气压下，1kg的水变成蒸汽要吸收2256kJ的热量。液膜51的不断蒸发吸热将使硅片7温度下降，直接导致硅片7产生热变形；硅片7的热变形会导致硅片7产生定位误差(如Overlay等)，最终影响设备曝光性能。
针对上述缺陷，在工件台8内部设置一系列温控液体流路腔体，该温控液体流路腔体内通温控流体后用于控制工件台8温度，补偿硅片7表面液膜蒸发制冷产生的不利影响。但是，曝光过程中工件台8将不断在水平面内不同方向进行加减速运动，运动方向为81表示，这将导致工件台8内液体相对工件台8产生滑移，即工件台8内的液体相对工件台8的流速产生波动，这将导致对硅片7表面液膜蒸发制冷作用的补偿产生波动，经分析得出流速波动导致的硅片7局部温度变化约0.001℃，这将导致硅片7产生定位误差，最终影响设备曝光性能。
发明内容
本发明的目的是，提供一种晶片承载系统和浸没光刻设备，以解决曝光过程中工件台的加减速运动对浸液滑移而导致工作台内液体的温度波动的缺陷。
为了解决上述技术问题，本发明提供一种晶片承载系统，包括工件台，所述工件台的内部设置有若干条液体流路腔体，每条所述液体流路腔体以关于所述工件台的水平面中心点呈中心对称的形式分布，相邻两条所述液体流路腔体内流通有方向相反的温控液体。
进一步的，本发明提供的晶片承载系统，垂向俯视时，每条所述液体流路腔体的形状为圆环形。
进一步的，本发明提供的晶片承载系统，所述若干条液体流路腔体的垂向截面相同。
进一步的，本发明提供的晶片承载系统，相邻两条所述液体流路腔体的中心点之间的距离小于每条所述液体流路腔体在水平面方向上的宽度的四倍。
进一步的，本发明提供的晶片承载系统，每条所述液体流路腔体的垂向截面的形状为矩形。
进一步的，本发明提供的晶片承载系统，所述晶片承载系统还包括若干强化传热结构，每条所述液体流路腔体的内侧表面设置有至少一个所述强化传热结构。
进一步的，本发明提供的晶片承载系统，每个所述强化传热结构为肋片或者凸点。
进一步的，本发明提供的晶片承载系统，每条所述液体流路腔体均具有用于提供温控液体的供应流路和回收温控液体的回收流路，且各所述液体流路腔体的供应流路相互独立，各所述液体流路腔体的回收流路相互独立。
进一步的，本发明提供的晶片承载系统，所述晶片承载系统还包括若干分支流量调节装置，在每个所述液体流路腔体的供应流路上均设置有至少一个所述分支流量调节装置，所述分支流量调节装置用于调节供应至各所述液体流路腔体的温控液体的流量。
进一步的，本发明提供的晶片承载系统，所述晶片承载系统还包括分流器，各所述液体流路腔体的供应流路中的温控液体均是通过所述分流器从外部温控液体供应源中分流而来。
进一步的，本发明提供的晶片承载系统，所述晶片承载系统还包括主流量调节装置，所述分流器与所述外部温控液体供应源之间设置有所述主流量调节装置。
为了解决上述技术问题，本发明还提供一种浸没光刻设备，包括主框架、照明系统、投影物镜、浸没头以及如上述的晶片承载系统，所述照明系统、所述投影物镜和所述晶片承载系统设置于所述主框架上，所述浸没头设置于所述投影物镜和所述晶片承载系统之间。
与现有技术相比，本发明提供的晶片承载系统和浸没光刻设备，通过工件台的内部设置有若干条液体流路腔体，每条所述液体流路腔体以关于所述工件台的水平面中心点呈中心对称的形式分布，相邻两条所述液体流路腔体内流通有方向相反的温控液体来控制工件台的温度，以补偿晶片表面液膜蒸发制冷产生的温度损失。通过在相邻两条所述液体流路腔体内流通有方向相反的温控液体，在曝光过程中工件台的加减速运动时，工件台的液体相对于工作台滑移时，由于若干条液体流路腔体内存在相反流通方向的温控液体，因此，液体滑移的方向总是与液体流路腔体内的其中一个流通方向相同，与液体滑移方向相同的液体流路腔体内的温控液体的流动方向，抵消了工件台在水平面内不同方向进行加减速运动导致的液体滑移产生的补偿温度的波动。从而克服了晶片的定位误差，提高了光刻设备的曝光性能。
附图说明
图1是现有的浸没光刻机的结构示意图；
图2是现有的浸没光刻机的浸液控制系统的结构示意图；
图3是现有的曝光过程中浸液相对于工件台的变化关系示意图；
图4是本发明的工件台的结构示意图；
图5是图4中A-A线或B-B线的剖面放大图；
图6是液体流路腔体内强化传热结构的示意图；
图7至图8是液体流路腔体的液体控制系统的结构示意图；
图9是液体流路腔体内另一强化传热结构的示意图。
具体实施方式
下面结合附图对本发明作详细描述：
图4是本发明的工件台的结构示意图。请参考图4和图5，本发明实施例提供一种晶片承载系统，包括工件台81，所述工件台81的内部设置有均匀分布的若干条相互独立的液体流路腔体，即每条液体流路腔体设置有单独的入口IN和出口OUT，相邻两条所述液体流路腔体内流通有方向相反的温控液体。在此，每条所述液体流路腔体沿所述工件台81的周向延伸，若干条相互独立的液体流路腔体沿所述工件台81的径向均匀分布。其中，图4中示出了6条液体流路腔体，但不限于6条，可以根据实际需要增加或者减少，包括多条奇数液体流路腔体8101、8103、8105和多条偶数液体流路腔体8102、8204、8106，奇数液体流路腔体内流通有第一方向的温控液体；偶数液体流路腔体内流通有第二方向的温控液体，所述第一方向与所述第二方向相反。即本发明实施例的奇数液体流路腔体8101、8103和8105内的液体流动方向为逆时针，偶数液体流路腔体8202、8104和8106内的液体流动方向为顺时针，如相应液体流路腔体内的箭头方向所示。
本发明实施例通过在工件台81的内部设置的若干条液体流路腔体内流通的温控液体来控制工件台81的温度，以补偿浸没光刻设备中晶片表面受到浸液的液膜蒸发制冷产生的温度损失，即补偿热量损失。通过在相邻两条液体流路腔体内流通有方向相反的温控液体，在曝光过程中工件台81的加减速运动时，工件台81的液体流路腔体内的液体相对于工作台81滑移时，由于若干条液体流路腔体内存在相反流通方向的温控液体，因此，液体滑移的方向总是与液体流路腔体内的液体其中一个流通方向相同，与液体滑移方向相同的液体流路腔体内的温控液体，抵消了工件台81在水平面内不同方向进行加减速运动时的液体滑移而导致的补偿温度的波动。即当液体向逆时针方向滑 移时，产生滑移的液体的流动方向与奇数液体流路腔体内的温控液体的流动方向相同，当液体向顺时针方向滑移时，产生滑移的液体的流动方向与偶数液体流路腔体内的温控液体的流动方向相同，从而抵消了工件台81在水平面内不同方向进行加减速运动时的液体滑移产生的温度波动。因此本发明实施例克服了晶片的定位误差，提高了光刻设备的曝光性能。
请参考图4，为了使晶片获得更好的温度均匀性和稳定性，每条液体流路腔体以关于所述工件台81的水平面中心点为中心对称的形式分布。
请参考图4，为了提高制造精度和获得更好的温度均匀性和稳定性，本发明实施例的液体流路腔体在垂向俯视时的形状为圆环形。若干条圆环形形状的液体流路腔体在工作台81的水平面中心点向外呈同心圆分布，以工作台81的水平面中心点向外的液体流路腔体依次包括液体流路腔体8106、液体流路腔体8105、液体流路腔体8104、液体流路腔体8103、液体流路腔体8102和液体流路腔体8101。即液体流路腔体在工作台81的水平面中心点向外的圆环形尺寸依次增大。作为替换方案，本发明实施例的液体流路腔体在垂向俯视时的形状也可以为正六边形、正八边形等正多边形的形状。
图5是图4中A-A线或B-B线的剖面放大图。请参考图5，为了进一步使晶片获得更好的温度均匀性，每条液体流路腔体的垂向截面相同，也即每条液体流路腔体(供液体流通的通道部分)的高度和宽度相同，在此，每条液体流路腔体的垂向截面均为矩形。即6条液体流路腔体的入口IN的垂直截面和出口OUT的截面相同。包括液体流路腔体8101的出口截面8101a和入口截面8101b，液体流路腔体8102的出口截面8102a和入口截面8102b，液体流路腔体8103的出口截面8103a和入口截面8103b，液体流路腔体8104的出口截面8104a和入口截面8104b，液体流路腔体8105的出口截面8105a和入口截面8105b，液体流路腔体8106的出口截面8106a和入口截面8106b。出口截面和入口截面的截面形状和截面面积完全相同，本发明实施例的液体流路腔体的垂向截面为矩形，其具有结构简单和制造方便的优点。其中矩形包括长方形和正方形。当然在制造工艺允许的情况之下，液体流路腔体的垂向截面的形状也可以为圆形或者正多边形。
请参考图5，为了使工作台的水平面的温度更加均匀，以使晶片获得更好的温度均匀性，本发明实施例的液体流路腔体的垂向截面形状为矩形时，相邻两条液体流路腔体(供液体流通的通道部分)的中心点之间在水平面方向上的距离L小于四倍的所述液体流路腔体在水平面方向上的宽度B，即L≤4B。当L>4B时，流动的液体流路腔体内的温控液体在工作台81加减速运动时，由于惯性的作用，液体流路腔体内的温控液体在改变方向时，产生的温控液体的流动间隙变大，从而加减速的瞬间出现较大的温度波动，从而对晶片的温度均匀性产生不利影响。
图6是液体流路腔体内强化传热结构的示意图，图9是液体流路腔体内另一强化传热结构的示意图。请参考图6和图9，本发明实施例的晶片承载系统，每条液体流路腔体的内侧表面设置有若干强化传热结构，其中强化传热结构可以为离散结构，也可以为连续结构。为了更加清楚的描述强化传热结构的方案，以下使用与上述6条液体流路腔体8101至8106不同的第7条液体流路腔体8107进行描述，实际上每条流体流路腔体内均可设置强化传热结构，第7条液体流路腔体8107仅为本发明实施例的示例，并不作为本发明的限制。请参考图6，本发明实施例的强化传热结构为离散结构，包括在液体流路腔体8107的左内侧表面8108和右内侧表面8109间隔设置均匀分布的肋片8112，肋片8112为矩形形状，而在液体流路腔体8107的上表面8110和下表面8111不设置肋片。请参考图9，本发明实施例的强化传热结构为离散结构，其为均匀间隔分布的凸点8122，仅在液体流路腔体8107的左内侧表面8108和右内侧表面8109设置，而在液体流路腔体8107的上表面8110和下表面8111不设置凸点。凸点8122具有弧形表面，其产生阻力小，便于腔体8107内的液体流动通过。
具有强化传热结构的液体流路腔体(以下为腔体表示)能够增加温控液体与腔体的接触表面积，从而将腔体内液体的温度通过侧表面的强化传热结构均匀的快速地传递给工作台81，其工作台的上表面快速的形成均匀稳定的温度。该强化传热结构的实质为热能交换，是将流通的液体的温度通过强化传热结构与工作台的温度进行快速交换，以使工作台81的温度更加稳定和均 匀。该强化传热结构仅在腔体的侧表面设置，而在腔体的上表面和下表面不设置，避免上表面设置时，与工作台81的上表面的温度形成反差的忽冷或者忽热的液体流动，对工作台81的上表面造成不利的温差现象，损坏晶片的情况。另外，强化传热结构能够实现传热系数各向异性，水平向和垂直向传热系数不同，强化传热结构在同心圆分布的液体流路腔体的左内侧表面和右内侧表面设置，则液体流路腔体在水平向传热系数更大有利于水平面内温度分布均化。
本发明实施例还提供一种浸没光刻设备，包括主框架、照明系统、投影物镜、浸没头以及如上述的晶片承载系统。
图7至图8是液体流路腔体的液体控制系统的结构示意图。请参考图7和图8，本发明实施例提供的液体流路腔体，包括每条所述液体流路腔体均具有用于提供温控液体的供应流路81131和回收温控液体的回收流路81132，且不同液体流路腔体的供应流路81131相互独立，不同液体流路腔体的回收流路81132相互独立。在每个液体流路腔体的供应流路上均设置有分支流量调节装置81133，用于调节供应至各液体流路腔体的温控液体的流量。各液体流路腔体的供应流路81131中的温控液体均是通过一分流器从外部温控液体供应源中分流而来。所述分流器与外部温控液体供应源之间设置有主流量调节装置81103。
其中，图7为每条液体流路腔体的液体控制系统的单独控制方案。图8为若干条液体流路腔体的液体控制系统的总体控制方案与单独控制方案的结合的混合控制方案。
本发明实施例以三条液体流路腔体进行描述说明混合控制方案，但不限于三条。三条液体流路腔体分别用区别于上述实施例的附图标记8114、8115和8116来表示。包括：
与液体流路腔体8114相通的液体供应流路81141和液体回收流路81142，用于该液体供应流路81141上的分支流量调节装置81143；
与液体流路腔体8115相通的液体供应流路81151和液体回收流路81152，用于该液体供应流路81151上的分支流量调节装置81153；
与液体流路腔体8116相通的液体供应流路81161和液体回收流路81162，用于该液体供应流路81161上的分支流量调节装置81163；
所有条液体供应流路通过分流器连通到液体总供应流路81101，所有所述液体回收流路通过回流器连通到液体总回收流路81102，所述液体总供应流路81101设置有主流量调节装置81103。其中分流器和回流器为安装方向不同的同一结构，例如分流器和回流器均可以为三通等多通管道。
当然还可以在各液体供应流路和/或液体总供应流路设置温度调节器和/或流速调节器。温度调节器用于调节温控液体的温度。流速调节器可以采用压力调节，通过不同的压力设置，提供不同的液体流速。
本发明实施例的若干条液体流路腔体的液体控制系统中的总体控制方案是将混合控制方案中的液体流路腔体上的分支流量调节装置全部去掉，只保留液体总供应流路81101上的主流量调节装置81103。
本发明不限于上述具体实施方式，凡在本发明的保护范围之内所作出的各种变化和润饰，均在本发明的保护范围之内。

Claims (12)

  1. 一种晶片承载系统，其特征在于，包括工件台，所述工件台的内部设置有若干条液体流路腔体，每条所述液体流路腔体以关于所述工件台的水平面中心点呈中心对称的形式分布，相邻两条所述液体流路腔体内流通有方向相反的温控液体。
  2. 如权利要求1所述的晶片承载系统，其特征在于，垂向俯视时，每条所述液体流路腔体的形状为圆环形。
  3. 如权利要求1所述的晶片承载系统，其特征在于，所述若干条液体流路腔体的垂向截面相同。
  4. 如权利要求3所述的晶片承载系统，其特征在于，相邻两条所述液体流路腔体的中心点之间的距离小于每条所述液体流路腔体在水平面方向上的宽度的四倍。
  5. 如权利要求3所述的晶片承载系统，其特征在于，每条所述液体流路腔体的垂向截面的形状为矩形。
  6. 如权利要求1所述的晶片承载系统，其特征在于，所述晶片承载系统还包括若干强化传热结构，每条所述液体流路腔体的内侧表面设置有至少一个所述强化传热结构。
  7. 如权利要求6所述的晶片承载系统，其特征在于，每个所述强化传热结构为肋片或者凸点。
  8. 如权利要求1所述的晶片承载系统，其特征在于，每条所述液体流路腔体均具有用于提供温控液体的供应流路和回收温控液体的回收流路，且各所述液体流路腔体的供应流路相互独立，各所述液体流路腔体的回收流路相互独立。
  9. 如权利要求8所述的晶片承载系统，其特征在于，所述晶片承载系统还包括若干分支流量调节装置，在每个所述液体流路腔体的供应流路上均设置有至少一个所述分支流量调节装置，所述分支流量调节装置用于调节供应至各所述液体流路腔体的温控液体的流量。
  10. 如权利要求9所述的晶片承载系统，其特征在于，所述晶片承载系统还包括分流器，各所述液体流路腔体的供应流路中的温控液体均是通过所述分流器从外部温控液体供应源中分流而来。
  11. 如权利要求10所述的晶片承载系统，其特征在于，所述晶片承载系统还包括主流量调节装置，所述分流器与所述外部温控液体供应源之间设置有所述主流量调节装置。
  12. 一种浸没光刻设备，其特征在于，包括主框架、照明系统、投影物镜、浸没头以及如权利要求1-11中任一项所述的晶片承载系统，所述照明系统、所述投影物镜和所述晶片承载系统设置于所述主框架上，所述浸没头设置于所述投影物镜和所述晶片承载系统之间。
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