WO2019237923A1 - Solar power generation tile and base thereof, and preparation method therefor - Google Patents

Solar power generation tile and base thereof, and preparation method therefor Download PDF

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Publication number
WO2019237923A1
WO2019237923A1 PCT/CN2019/089065 CN2019089065W WO2019237923A1 WO 2019237923 A1 WO2019237923 A1 WO 2019237923A1 CN 2019089065 W CN2019089065 W CN 2019089065W WO 2019237923 A1 WO2019237923 A1 WO 2019237923A1
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WIPO (PCT)
Prior art keywords
substrate
layer
power generation
solar power
generation tile
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PCT/CN2019/089065
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French (fr)
Chinese (zh)
Inventor
朱伟
张继凯
程晓龙
Original Assignee
汉能移动能源控股集团有限公司
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Priority claimed from CN201810885326.5A external-priority patent/CN109004040A/en
Application filed by 汉能移动能源控股集团有限公司 filed Critical 汉能移动能源控股集团有限公司
Publication of WO2019237923A1 publication Critical patent/WO2019237923A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/049Protective back sheets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the present application relates to, but is not limited to, the field of photovoltaic power generation technology, and particularly relates to, but not limited to, a substrate for a solar power generation tile and a preparation method thereof, and a solar power generation tile and a preparation method thereof.
  • Some solar power tiles are thin-film solar power components based on copper-indium-gallium-selenium technology.
  • the front panel of some solar power tiles is a transparent substrate, and the appearance color is the color of the solar panel.
  • An embodiment of the present application provides a substrate for a solar power generation tile, and the substrate includes:
  • An embodiment of the present application further provides a solar power generation tile, which includes: a solar cell chip; and a back plate located on opposite sides of the solar cell chip and the substrate for a solar power generation tile as described above.
  • An embodiment of the present application further provides a method for preparing a substrate for a solar power generation tile as described above, the method includes: preparing the substrate; and on at least one of two opposite surfaces of the substrate. Forming the color developing layer.
  • An embodiment of the present application further provides a method for preparing a solar power generation tile.
  • the method includes:
  • a solar cell chip and a back plate are sequentially laid, and packaging processing is performed to obtain the solar power generation tile.
  • FIG. 1 is a schematic structural diagram of a substrate for a solar power generation tile according to an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application.
  • FIG. 3 is a structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application.
  • FIG. 4 is a structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application.
  • FIG. 5 is a structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a solar power generation tile provided by an embodiment of the present application.
  • the substrate 100 includes: a substrate 1; and a color rendering layer 2, which covers two opposite sides of the substrate 1. On at least one of the surfaces, the color rendering layer 2 is transparent.
  • the substrate 1 is a transparent substrate 1 and can transmit light.
  • the shape of the substrate 1 may be curved or planar.
  • Color is the visual perception of light produced by the eyes, the brain, and our life experience.
  • the light we see with our eyes is generated by electromagnetic waves with a narrow wavelength range, and electromagnetic waves of different wavelengths show different colors.
  • the substrate 1 When the substrate 1 is used as a front panel of a solar power tile, the substrate 1 includes a side facing the solar cell chip 300 and a side facing away from the solar cell chip 300. As shown in FIG. 1, the color rendering layer 2 may cover the substrate 1
  • the side of the substrate 1 facing the solar cell chip 300 may also be covered on the side of the substrate 1 facing away from the solar cell chip 300, as shown in FIG. 2, or may be covered on the side of the substrate 1 facing the solar cell chip 300. It is also covered on the side of the substrate 1 facing away from the solar cell chip 300. Since the color rendering layer 2 covering the side of the substrate 1 facing the solar cell chip 300 is encapsulated between the substrate 1 and the solar cell chip 300, it will not be exposed to the external environment, avoiding wind, sun and rain. Therefore, the service life is longer, and the service life of the color rendering layer 2 covering the side of the substrate 1 facing away from the solar cell chip 300 is relatively short.
  • the substrate 100 for a solar power generation tile includes a substrate 1 and a color developing layer 2 covering at least one of two opposite surfaces of the substrate 1, and the color developing layer 2 may be Light transmission, therefore, when the light-transmitting solar power generation tile substrate 100 is used as a front plate provided on the light receiving surface of the solar power generation tile, on the one hand, it is possible to ensure that sunlight is irradiated onto the solar cell chip 300, so that the solar cell The chip 300 can absorb sunlight; on the other hand, the light receiving surface of the solar power tile can also be colored (for example, it can be any one of red, orange, yellow, green, blue, indigo, and purple), so that it can Meet customer needs and make the building more aesthetically pleasing when applied.
  • the color rendering layer 2 may be configured to include: a color rendering sub-layer 21, and the color rendering sub-layer 21 may include two or more film layers 211.
  • the color rendering layer 2 includes a first color rendering sub-layer 22 and a second color rendering sub-layer 23; wherein the first color rendering sub-layer 22 includes a first film.
  • Layer 2111 and second film layer 2112; second color rendering sub-layer 23 includes a third film layer 2113 and a fourth film layer 2114.
  • the refractive indexes of the first film layer 2111 and the second film layer 2112 are different; the refractive indexes of the third film layer 2113 and the fourth film layer 2114 are also different; the first and second color rendering sublayers 22 and 2114 23 can be set to show the same hue, or it can also be set to show different hue according to the desired color of the color rendering layer 2.
  • the former setting method can make the light transmittance of the color rendering layer 2 increase.
  • the color rendering layer 2 may also include more color rendering sub-layers 21, and the color rendering sub-layer 21 may also include more film layers 211, which is not specifically limited herein.
  • Hue is determined by which wavelength dominates the light reflected by the object. Different wavelengths produce different colors. Hue is an important feature of color and it determines the fundamental characteristics of color.
  • the red hue refers to the color mainly represented by the spectrum of red light (wavelength: 620-780 nm) in the light reflected by the color rendering layer 2.
  • the red color when the color rendering layer 2 displays red, the red color may be red displayed by one color rendering sub-layer 21, or may be red displayed by superposing a plurality of color rendering sub-layers 21 displaying light red. Or, it may also be a red color displayed after a plurality of color-developing sub-layers 21 displaying other colors.
  • each color rendering sub-layer 21 may be one film layer 211 or multiple film layers 211.
  • one color rendering sub-layer 21 may include a plurality of film layers 211 arranged in a stack, each of the film layers 211 is composed of a single material, and at least two of the plurality of film layers 211 are The material of 211 is different.
  • the single material described in the present application means one material except for impurities.
  • the refractive indices of the plurality of film layers 211 in each of the color rendering sub-layers 21 are different, and at the same time, the stacking order of the film layers 211 in each color rendering sub-layer 21 is the same, and In layer 2, the refractive indices of the adjacent film layers 211 are different.
  • the film layer 211 closest to the substrate 1 may be a film layer 211 with a low refractive index or a film layer 211 with a high refractive index.
  • the color rendering layer 2 may include two color rendering sub-layers 21, and each color rendering sub-layer 21 includes two film layers 211: an A film layer and a B film layer.
  • the A film layer and the B film layer in each color developing sub-layer 21 are sequentially stacked in one of the following two orders: A film layer—B film layer, B film layer—A film layer; in this example,
  • the first film layer is the film layer closest to the surface of the substrate 1 among the two film layers
  • the second film layer covers the side of the first film layer away from the surface of the substrate 1, that is, The film layer farthest from the surface of the substrate 1 among the two film layers.
  • the color rendering layer 2 may include three color rendering sub-layers 21, and each color rendering sub-layer 21 includes three film layers 211: an A film layer, a B film layer, and a C film layer.
  • the three film layers in each color-developing sub-layer 21 are sequentially stacked in accordance with one of the following six sequences:
  • the first film layer is the film layer closest to the surface of the substrate 1 among the three film layers.
  • the second film layer covers the side of the first film layer away from the surface of the substrate 1
  • the third film layer covers the side of the second film layer away from the surface of the substrate 1. That is, the three film layers are away from the substrate. 1 the farthest layer on the surface.
  • the first film layer may be the film layer with the lowest refractive index among the three film layers, or the film layer with the highest refractive index among the three film layers.
  • the film layer 211 may be selected from a silicon dioxide layer, a titanium trioxide layer, a magnesium fluoride layer, a zinc sulfide layer, an aluminum oxide layer, a titanium dioxide layer, a titanium oxide layer, and a titanium oxide layer. Any one of a chromium layer, a zirconium dioxide layer, and a lanthanum sulfate layer.
  • each of the color developing sub-layers 21 may include two film layers 211 disposed in a stack, and a refractive index of one of the film layers 211 is higher than a refractive index of the other of the film layers 211.
  • each of the color rendering sub-layers 21 may include two film layers 211 disposed in a stack, and a refractive index of one of the film layers 211 is at least 0.5 higher than a refractive index of the other film layer 211.
  • the film layer 211 having a high refractive index is closest to the surface of the substrate 1, or the film layer 211 having a low refractive index is closest to the surface of the substrate 1.
  • each of the color developing sub-layers 21 may include two film layers 211 disposed in a stack, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively.
  • each of the color developing sub-layers 21 may include two film layers 211 arranged in a stack, and the two film layers 211 may be a magnesium fluoride layer (refractive index is about 1.38) and a zinc sulfide layer ( The refractive index is about 2.4).
  • each of the color developing sub-layers 21 may include three film layers 211 arranged in a stack, and the three film layers 211 may be a titanium trioxide layer, a silicon dioxide layer, and a lanthanum sulfate layer, respectively.
  • the color rendering layer 2 may include one color rendering sub-layer 21 (as shown in FIG. 3) or two color rendering sub-layers 21 (such as As shown in FIG. 4), each of the color developing sub-layers 21 may include two film layers 211 arranged in a stack, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively. In the color developing layer 2 of FIG. 4, the titanium trioxide layer and the silicon dioxide layer are alternately disposed.
  • the material of the film layer, the thickness of the film layer, and the stacking order of the film layers of different materials can be obtained by changing the film system design according to the desired color displayed by the single color-developing sublayer 21. And according to the color that is expected to be finally displayed by the color developing layer 2, the hue displayed by each of the plurality of color developing sub-layers 21 is designed.
  • a composite film layer 212 forms a color rendering sub-layer 21, and the composite film layer 212 may be formed by mixing different materials in a predetermined ratio.
  • Each of the different materials here can also be regarded as a single material.
  • the single material in this implementation manner also means that a material other than impurities is one.
  • one color rendering sub-layer 21 may also include multiple composite film layers 212, and the color rendering layer 2 may also include multiple color rendering sub-layers 21, which is not specifically limited herein.
  • the composite film layer 212 may be formed by mixing titanium trioxide and silicon dioxide in a predetermined ratio.
  • the color depth of the color developing layer 2 is related to the thickness of the color developing layer 2.
  • the thickness of the color rendering sub-layer 21 is the thickness of the color rendering layer 2
  • the color rendering layer 2 includes a plurality of color rendering sub-layers 21 arranged in a stack
  • the thickness of a single color rendering sub-layer 21 and the number of color rendering sub-layers 21 jointly determine the thickness of the color rendering layer 2.
  • the thickness of the film layer 211 may be between 80-230 nm.
  • Each of the film layers 211 included in the color rendering layer 2 The number can be between 6-12, for example between 8-12.
  • Light transmittance refers to the ability of light to pass through a medium, and is the percentage of the luminous flux passing through a transparent or translucent body and its incident luminous flux.
  • the light transmittance of the substrate 100 for solar power generation tiles is between 50-91.5%, and the substrate 100 for solar power generation tiles can achieve high light transmittance while displaying colors.
  • the material of the substrate 1 is not limited, and the substrate 1 may be a glass material or a plastic material.
  • the substrate 1 may be ultra-white glass, such as tempered ultra-white glass.
  • Ultra-white glass is a kind of ultra-transparent low-iron glass. It also has all the processability of high-quality float glass. It has superior physical, mechanical and optical properties. It can be processed like various other high-quality float glass. The light rate can reach above 91.5%.
  • the power generation tile includes: a solar cell chip 300; and a back plate 500 on opposite sides of the solar cell chip 300 and the solar power generation as described above Tile with substrate 100.
  • the solar power generation tile provided in the embodiment of the present application uses the above-mentioned transparent solar power generation base substrate 100 as a front plate provided on the light receiving surface of the solar power generation tile. On the one hand, it can ensure that sunlight is irradiated onto the solar cell chip 300.
  • the solar cell chip 300 can absorb sunlight; on the other hand, the light receiving surface of the solar power generation tile can also be colored (can be any one of red, orange, yellow, green, blue, indigo, and purple), so that It can meet the needs of customers and make the building more beautiful when applied.
  • the solar cell chip 300 and the back plate 500 and the substrate 100 for solar power generation tiles can be packaged by a packaging adhesive film 600.
  • the encapsulating film 600 may be a hot-melt type encapsulating film and melts at a temperature of 160 ° C.
  • the encapsulant film 600 may be an ethylene-octene copolymer (PoE) copolymer film or an ethylene-vinyl acetate (EVA) film.
  • PoE ethylene-octene copolymer
  • EVA ethylene-vinyl acetate
  • the POE film or the EVA film realizes adhesion to the solar cell chip 300, the back plate 500, and the substrate 100 for solar power generation tiles during the lamination process.
  • a waterproof adhesive film 700 may be further provided between the substrate 100 for solar power generation tiles and the solar cell chip 300, and the waterproof adhesive film 700 may be formed of butyl rubber.
  • a bus bar 800 may be further disposed between the back plate 500 and the solar cell chip 300.
  • the embodiment of the present application further provides a method for preparing a substrate 100 for a solar power generation tile as described above, including: preparing the substrate 1; and forming the substrate 1 on at least one of two opposite surfaces of the substrate 1. Color rendering layer 2.
  • the substrate 1 may have a curved shape or a planar shape, and a curved shape is taken as an example for description below.
  • the embodiment of the present application provides a method for preparing a substrate 100 for a solar power generation tile.
  • the obtained substrate 100 for a solar power generation tile can make the light receiving surface of the solar power generation tile appear colored, so as to meet customer requirements, and make the building more useful during application. With beauty.
  • the color substrate 1 is usually prepared by coating on the flat substrate 1, and is mainly divided into two types: online coating and offline coating according to processing processes.
  • On-line coating refers to the process of coating is performed in the float glass manufacturing process, and the film is sprayed by magnetron sputtering.
  • the offline coating is performed after the flat substrate 1 is shipped from the factory. Compared with on-line coating, the firmness of the film obtained by off-line coating is bound to be affected.
  • Magnetron sputtering coating technology is a technology that uses charged particles to bombard the target surface in a vacuum, so that the bombarded particles are deposited on the substrate.
  • the solar power tiles Because of the shape requirements of solar power tiles, they need to be bent and cooled (can be annealed or tempered, and hot-formed glass substrates can be tempered by rapid blow cooling). If the solar power tiles are plate-shaped obtained by online or offline coating
  • the heating furnace continuously heats the coated substrate to a molten state (when the coated substrate is glass, the heating temperature in the molten state is 690-730 ° C), and then enters the die extrusion molding to obtain a curved shape. Of the substrate.
  • the film will melt and cause mold release.
  • Demolding refers to the phenomenon that the film on the substrate is cracked or melted due to various external forces, temperature, etc., and the substrate is detached or peeled off. If the temperature at the time of entering the mold is lower than the melting temperature of the film, molding will be difficult and the yield will be low. Even if the cost is increased to increase the melting temperature of the film, the film will crack due to the extrusion or stretching of the curvature of the substrate when it is bent in a mold. The same cannot be applied to the aesthetic requirements of solar power tiles.
  • a film is formed by first preparing the substrate 1 into a curved shape, and then coating the curved surface on the curved substrate 1 (that is, the color rendering layer 2 in the embodiment of the present application), thereby avoiding first coating and then
  • a demolding phenomenon occurs due to the curvature or extrusion of the substrate 1.
  • the curved substrate 1 can be prepared by various methods such as a hot bending method and a cold bending method, which is not limited herein.
  • the step of preparing a curved substrate 1 may include: hot bending and cooling the flat substrate 1 (either an annealing process or a tempering process) to obtain the curved substrate. 1.
  • Hot bending refers to the process of heating and softening the flat substrate 1 and forming it in a mold to make a curved surface. After the hot bending, the steel sheet is cooled to complete the tempering.
  • annealing refers to the transition of the glass from a typical liquid state to a brittle state when passing through the transition temperature region (Tf-Tg), and the glass molecules can still migrate within a considerable temperature range below the Tg point, which can eliminate the heat in the glass Inhomogeneity of stress and structural state, this temperature region is the annealing region of the glass, that is, the annealing region is related to the viscosity of the glass.
  • Tempering refers to heating the glass below the softening temperature, and obtaining it by rapid and uniform cooling at 50-60 ° C above the Tg point, which can increase the hardness.
  • the substrate 1 can be heated to a molten state, extruded into a designed shape through upper and lower dies, and then annealed or tempered to obtain the substrate 1.
  • the substrate 1 may be a tempered substrate 1.
  • the tempered substrate 1 has high hardness.
  • the specific method of forming the color developing layer 2 on at least one of the two opposite surfaces of the substrate 1 is not limited, as long as the color developing layer 2 can be formed on at least one of the two opposite surfaces of the substrate 1.
  • the color-developing layer 2 may be formed on at least one of two opposite surfaces of the substrate 1 by an electron beam evaporation coating method, and the color-developing layer 2 may also be formed by a magnetron sputtering coating method.
  • the step of forming the color developing layer 2 on at least one of two opposite surfaces of the curved substrate 1 includes: using an electron beam bombardment method to target (i.e., Evaporation material) is heated so that the target material is evaporated and deposited on at least one of the two opposite surfaces of the curved substrate 1 to form the color developing layer 2.
  • target i.e., Evaporation material
  • the electron beam evaporation coating refers to a coating method in which a target material in a crucible is bombarded with an electron beam, so that the target material melts and evaporates and is deposited on the substrate 1.
  • This method can more accurately achieve evaporation, and can be plated with high purity and high precision.
  • Thin film When the electron beam evaporation coating method is used for coating, the deposition rate of the film on the surface of the substrate 1 is slow. With the progress of the evaporation, there is no obvious difference in the thickness of the film deposited on the peak and trough, and the uniformity is well controlled, which is suitable for curved surface coating. Therefore, the thickness of the film can be better adjusted by using the electron beam evaporation coating in the embodiment of the present application.
  • the film formed by electron beam evaporation coating can withstand a high temperature of 300 ° C, which is much higher than the heating temperature (typically 160 ° C) during the packaging and lamination of solar power tiles, which can prevent the film from cracking and peeling during the lamination process. Film and other phenomena.
  • the temperature at which the target is deposited on the curved substrate 1 may be 60-80 ° C. That is, the film formation temperature of the target (that is, the condensation temperature of the target on the substrate 1) can be 60-80 ° C, and this temperature can make the formed film denser.
  • the process of forming the color developing layer 2 by an electron beam evaporation coating method is performed in a reaction chamber in a vacuum state, wherein the vacuum degree of the reaction chamber may be ⁇ 10 -2 Pa, For example, it may be 5 ⁇ 10 -3 -7 ⁇ 10 -3 Pa.
  • the preparation method may further include: heating the color developing layer 2 and the curved substrate 1 to improve the color developing layer 2 and the substrate. 1 bonding strength.
  • the temperature for heating the color developing layer 2 and the curved substrate 1 can be set reasonably according to the materials of the color developing layer 2 and the substrate 1.
  • the heating temperature may be 200-400 ° C.
  • the heating temperature may be any one of 200 ° C, 250 ° C, 300 ° C, 350 ° C, and 400 ° C. The higher the heating temperature, the better the bonding strength between the color-developing layer 2 and the substrate 1, and the color-developing layer 2 will not melt at 400 ° C, so that no mold release phenomenon will occur.
  • the target is heated by using an electron beam bombardment method, so that the target is evaporated and deposited on at least one of two opposite surfaces of the curved substrate 1 to form the target.
  • the preparation method may further include: using an ion beam to bombard the surface of the curved substrate 1 to be coated (that is, the surface of the substrate 1 on which the color developing layer 2 is to be formed) to The surface of the curved substrate 1 to be coated is cleaned and roughened. This process can remove burrs and dirt on the surface of the curved substrate 1 to be coated, and can also improve the adhesion of the film to the substrate 1 through the roughening process. Ion beam bombarding the surface to be coated can form pits on the surface of the curved substrate 1 to be coated, thereby improving the roughness of the surface to be coated.
  • the step of forming the color developing layer 2 on at least one of two opposite surfaces of the curved substrate 1 may include: forming the curved substrate 1.
  • One or more color developing sub-layers 21 are formed on at least one of the two opposite surfaces.
  • a color rendering sub-layer 21 on at least one of two opposite surfaces of the curved substrate 1 may be implemented in two ways.
  • a plurality of different materials may be simultaneously evaporated according to a predetermined ratio to obtain one of the color developing sub-layers 21.
  • different materials can be placed in different crucibles according to a predetermined ratio, and the simultaneous evaporation of different materials can be achieved by controlling the temperature of each crucible and the boiling point of the placed materials.
  • the color developing sub-layer 21 may be formed by mixing titanium trioxide and silicon dioxide in a predetermined ratio.
  • a plurality of different materials may be sequentially evaporated in accordance with a predetermined ratio to obtain one of the color developing sub-layers 21.
  • the electron beam evaporation coating method is adopted, which is better than the magnetron sputtering coating method, which is good for controlling the thickness of various materials in the color rendering sublayer 21 so that the same thickness
  • the color developing layer 2 can be formed by stacking thinner material layers. In this way, the number of layers obtained by the electron beam evaporation coating method can be more, so that the range of color depth of the color developing layer 2 can also be changed. Wider, which makes the color fuller and more beautiful.
  • one of the color rendering sub-layers 21 may include two film layers 211, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively.
  • the thickness ratio of the two film layers 211 may be 30: 100-95: 100, which is optional.
  • the thickness ratio of the two film layers 211 may be 40: 70-50: 70.
  • the hue presented by the color rendering sub-layer 21 is yellow, the two The thickness ratio of the film layer 211 (the titanium trioxide layer and the silicon dioxide layer) may be 0.5-0.95.
  • the thickness ratio of two film layers 211 is also It can be a: b, where the range of a can be 65-70, and the range of b can be 90-100.
  • the hue presented by the color rendering sub-layer 21 is red
  • two of the film layers 211 can be 80: 130-95: 130.
  • the thickness ratio of the titanium trioxide layer to the silicon dioxide layer can be any value in the range of 40: 70-50: 70, for example, It can be 40:70.
  • the titanium trioxide layer can be 40nm and the silicon dioxide layer can be 70nm.
  • it can be 42:60.
  • the titanium trioxide layer can be 42nm and the silicon dioxide layer can be It is 60 nm, for example, 45:70 or 50:70, which is the same as this example.
  • the thickness unit of the titanium trioxide layer and the silicon dioxide layer may be nanometers.
  • the ratio of the thickness of the titanium trioxide layer to the silicon dioxide layer can be any value within the range of 0.5-0.95.
  • the titanium trioxide layer and the The thickness ratio of the silicon dioxide layer can be any value in the range of 60: 100-70: 90, for example, 65:90.
  • the titanium trioxide layer can be 65nm
  • the silicon dioxide layer can be 90nm.
  • the thickness ratio of the titanium trioxide layer to the silicon dioxide layer may be 0.7.
  • the titanium trioxide layer may be 92 nm
  • the silicon dioxide layer may be 131 nm; for example, it may be 70: 100, 70: 90 or 70: 100, as in this example, the unit of thickness of the titanium trioxide layer and the silicon dioxide layer may be in the nanometer order.
  • the thickness ratio of the titanium trioxide layer to the silicon dioxide layer can be any value in the range of 80: 130-95: 130, for example, it can be 80: 130
  • the titanium trioxide layer can be 80 nm
  • the silicon dioxide layer can be 130 nm, for example, 69: 100
  • the titanium trioxide layer can be 220 nm
  • the silicon dioxide layer can be 321 nm. It can be 90: 130 or 95: 130, which is the same as this example.
  • the thickness of the titanium trioxide layer and the silicon dioxide layer can be in nanometers.
  • one of the color rendering sub-layers 21 may include two film layers 211, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively.
  • the thickness of the silicon dioxide layer may be 40-50 nm, and the thickness of the titanium trioxide layer may be 70 nm;
  • the thickness of the silicon dioxide layer can be 60-70nm, and the thickness of the titanium trioxide layer can be 90-100nm.
  • the thickness of the silicon dioxide layer can be It is 80-95 nm, and the thickness of the titanium trioxide layer can be 130 nm.
  • one of the color rendering sub-layers 21 may include two film layers 211, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively.
  • the thickness of the silicon dioxide layer may be 60nm-70nm
  • the thickness of the titanium trioxide layer may be 15nm-25nm.
  • the thickness of the silicon layer can be 45nm-55nm, the thickness of the titanium trioxide layer can be 40nm-50nm; for example, the thickness of the silicon dioxide layer can be 50nm-60nm, and the thickness of the titanium titanium oxide layer can be 45nm-55nm ;
  • the thickness of the silicon dioxide layer can be 55nm-65nm
  • the thickness of the titanium trioxide layer can be 35nm-45nm
  • the thickness of the silicon dioxide layer can be 75nm-85nm
  • the thickness can be 40nm-50nm; for example, the thickness of the silicon dioxide layer can be 100nm-110nm, and the thickness of the titanium trioxide layer can be 45nm-55nm; for example, the thickness of the silicon dioxide layer can be 410nm-430nm
  • the thickness of the titanium trioxide layer can be 240 nm-260 nm.
  • the thickness of the silicon dioxide layer may be 125-135nm, and the thickness of the titanium trioxide layer may be 85-95nm.
  • the thickness of the layer can be 120-130 nm, the thickness of the titanium trioxide layer can be 60-70 nm; for example, the thickness of the silicon dioxide layer can be 60-70 nm, and the thickness of the titanium trioxide layer can be 55-65 nm;
  • the thickness of the silicon dioxide layer may be 310-330 nm, and the thickness of the titanium trioxide layer may be 210-230 nm.
  • the thickness of the silicon dioxide layer may be 145-155nm, and the thickness of the titanium trioxide layer may be 100-110nm.
  • the thickness of the layer can be 135-145nm, the thickness of the titanium trioxide layer can be 70-80nm; for example, the thickness of the silicon dioxide layer can be 70-80nm, and the thickness of the titanium trioxide layer can be 65-75nm;
  • the thickness of the silicon dioxide layer may be 355-375 nm, and the thickness of the titanium trioxide layer may be 240-260 nm.
  • the light transmittance of the solar power generation tile substrate 100 prepared by the method provided in the embodiment of the present application may be between 50-91.5%, and the light transmittance of the blue-colored solar power generation tile substrate 100 is not less than 85. %; And the color consistency of the substrate 100 is good, and there is no local demolding phenomenon.
  • the embodiment of the present application further provides a method for preparing a solar power generating tile, which may include: preparing the substrate 100 for a solar power generating tile as described above or the substrate 100 for a solar power generating tile obtained by the manufacturing method described above.
  • the solar cell chip 300 and the back plate 500 are laid in order, and the packaging process is performed to obtain the solar power generation tile.
  • the method for preparing a solar power generating tile provided in the embodiment of the present application can obtain a solar power generating tile with a colored appearance, thereby meeting customer needs and making the building more aesthetically pleasing when applied.
  • the solar cell chip 300 and the back plate 500 may be laid on any side of the substrate 100 for the solar power generation tile.
  • the substrate 100 for a solar power generation tile may be provided with a color developing layer 2 on either side thereof, and the solar cell chip 300 and the back plate 500 may be sequentially laid on the side of the substrate 100 having the color developing layer 2.

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Abstract

Disclosed are a base for a solar power generation tile, and a solar power generation tile. The base comprises: a substrate; and a color developing layer, the color developing layer covering at least one surface of two opposite surfaces of the substrate, and the color developing layer being light-transmittable. The solar power generation tile comprises: a solar cell chip; and backplates located at two opposite sides of the solar cell chip, and the base.

Description

一种太阳能发电瓦及其基底和它们的制备方法Solar power generation tile, its substrate and preparation method thereof
本申请基于申请号为201810597953.9申请日为2018/6/11的中国专利申请、申请号为201810885326.5申请日为2018/8/6的中国专利申请,并要求上述两件中国专利申请的优先权,上述两件中国专利申请的全部内容在此引入本申请作为参考。This application is based on Chinese patent application with application number 201810597953.9, application date 2018/6/11, Chinese patent application with application number 201810885326.5, application date 2018/8/6, and claims the priority of the above two Chinese patent applications. The entire contents of the two Chinese patent applications are incorporated herein by reference.
技术领域Technical field
本申请涉及但不限于光伏发电技术领域,尤其涉及但不限于一种太阳能发电瓦用基底及其制备方法和太阳能发电瓦及其制备方法。The present application relates to, but is not limited to, the field of photovoltaic power generation technology, and particularly relates to, but not limited to, a substrate for a solar power generation tile and a preparation method thereof, and a solar power generation tile and a preparation method thereof.
背景技术Background technique
从能源格局演变来看,新型的清洁能源取代传统能源是大势所趋,能源发展的轨迹和规律是从不清洁走向清洁。大力发展清洁能源可以有效保护生态环境,促进社会经济又好又快地发展。在这种前提下,兼具建筑装饰和发电功能的太阳能发电瓦应运而生。Judging from the evolution of the energy pattern, it is the general trend that new clean energy replaces traditional energy. The trajectory and law of energy development are from unclean to clean. Vigorously developing clean energy can effectively protect the ecological environment and promote the sound and rapid development of society and economy. Under this premise, solar power generation tiles with both building decoration and power generation functions came into being.
一些太阳能发电瓦是基于铜铟镓硒技术的薄膜太阳能发电组件。一些太阳能发电瓦的前面板为透明的基板,其外观颜色呈现的是太阳能电池板的颜色。Some solar power tiles are thin-film solar power components based on copper-indium-gallium-selenium technology. The front panel of some solar power tiles is a transparent substrate, and the appearance color is the color of the solar panel.
然而,我国幅员辽阔,各地由于历史传统或者风俗习惯等原因,坡屋面上的瓦会倾向于不同的颜色,这就要求太阳能发电瓦具有不同的颜色以供客户选择。However, China is a vast country. Due to historical traditions or customs, the tiles on slope roofs tend to have different colors. This requires solar power tiles to have different colors for customers to choose.
发明概述Summary of invention
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。The following is an overview of the topics detailed in this article. This summary is not intended to limit the scope of protection of the claims.
本申请一实施例提供了一种太阳能发电瓦用基底,所述基底包括:An embodiment of the present application provides a substrate for a solar power generation tile, and the substrate includes:
基板;以及Substrate; and
显色层,所述显色层覆盖在所述基板的相对两个表面中的至少一个表面上,所述显色层可透光。A color-developing layer covering at least one of two opposite surfaces of the substrate, and the color-developing layer is transparent.
本申请一实施例还提供了一种太阳能发电瓦,所述发电瓦包括:太阳能电池芯片;以及位于所述太阳能电池芯片相对两侧的背板和如上所述的太阳能发电瓦用基底。An embodiment of the present application further provides a solar power generation tile, which includes: a solar cell chip; and a back plate located on opposite sides of the solar cell chip and the substrate for a solar power generation tile as described above.
本申请一实施例还提供了一种如上所述的太阳能发电瓦用基底的制备方法,所述制备方法包括:制备所述基板;以及在所述基板的相对两个表面中的至少一个表面上形成所述显色层。An embodiment of the present application further provides a method for preparing a substrate for a solar power generation tile as described above, the method includes: preparing the substrate; and on at least one of two opposite surfaces of the substrate. Forming the color developing layer.
本申请一实施例还提供了一种太阳能发电瓦的制备方法,所述制备方法包括:An embodiment of the present application further provides a method for preparing a solar power generation tile. The method includes:
在如上所述的太阳能发电瓦用基底或者如上所述的制备方法制备获得的太阳能发电瓦用基底上,依次敷设太阳能电池芯片和背板,并进行封装处理,获得所述太阳能发电瓦。On the substrate for a solar power generation tile as described above or the substrate for a solar power generation tile obtained by the preparation method described above, a solar cell chip and a back plate are sequentially laid, and packaging processing is performed to obtain the solar power generation tile.
本申请的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得更加清楚,或者通过实施本申请而了解。本申请的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。Other features and advantages of the present application will be explained in the subsequent description, and partly become clearer from the description, or be understood by implementing the present application. The objects and other advantages of the present application can be achieved and obtained by the structures specifically pointed out in the description, the claims, and the drawings.
附图概述Overview of the drawings
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to explain the technical solutions in the embodiments of the present application or the prior art more clearly, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are merely These are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without paying creative work.
图1为本申请实施例提供的一种太阳能发电瓦用基底的结构示意图;FIG. 1 is a schematic structural diagram of a substrate for a solar power generation tile according to an embodiment of the present application; FIG.
图2为本申请实施例提供的另一种太阳能发电瓦用基底的结构示意图;2 is a schematic structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application;
图3为本申请实施例提供的另一种太阳能发电瓦用基底的结构图;FIG. 3 is a structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application; FIG.
图4为本申请实施例提供的另一种太阳能发电瓦用基底的结构图;4 is a structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application;
图5为本申请实施例提供的另一种太阳能发电瓦用基底的结构图;5 is a structural diagram of another substrate for a solar power generation tile provided by an embodiment of the present application;
图6为本申请实施例提供的一种太阳能发电瓦的结构示意图。FIG. 6 is a schematic structural diagram of a solar power generation tile provided by an embodiment of the present application.
附图标记:Reference signs:
1-基板;2-显色层;21-显色子层;22-第一显色子层;23-第二显色子层; 211-膜层;2111-第一膜层;2112-第二膜层;2113-第三膜层;2114-第四膜层;212-复合膜层;100-基底;300-太阳能电池芯片;500-背板;600-封装胶膜;700-防水胶膜;800-汇流条。1-substrate; 2-color rendering layer; 21-color rendering sublayer; 22-first color rendering sublayer; 23-second color rendering sublayer; 211-film layer; 2111-first film layer; 2112-th Two film layers; 2113-third film layer; 2114-fourth film layer; 212-composite film layer; 100-substrate; 300-solar cell chip; 500-back plate; 600-sealing film; 700-waterproof film ; 800-bus bar.
详述Elaborate
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
在本申请的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。在本申请的描述中,除非另有说明,“多个”的含义是两个或两个以上。In the description of this application, it needs to be understood that the terms “center”, “up”, “down”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, The orientations or positional relationships indicated by "top", "bottom", "inner", "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing this application and simplifying the description, and are not intended or implied The device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on this application. In the description of the present application, unless otherwise stated, "a plurality" means two or more.
本申请实施例提供了一种太阳能发电瓦用基底100,参见图1与图2,所述基底100包括:基板1;以及显色层2,该显色层2覆盖在该基板1的相对两个表面中的至少一个表面上,该显色层2可透光。An embodiment of the present application provides a substrate 100 for a solar power generation tile. Referring to FIGS. 1 and 2, the substrate 100 includes: a substrate 1; and a color rendering layer 2, which covers two opposite sides of the substrate 1. On at least one of the surfaces, the color rendering layer 2 is transparent.
其中,该基板1为透明基板1,可使光线透过。基板1的形状可以为曲面状或者平面状。The substrate 1 is a transparent substrate 1 and can transmit light. The shape of the substrate 1 may be curved or planar.
颜色是通过眼、脑和我们的生活经验所产生的对光的视觉感受,我们肉眼所见到的光线,是由波长范围很窄的电磁波产生的,不同波长的电磁波表现为不同的颜色。Color is the visual perception of light produced by the eyes, the brain, and our life experience. The light we see with our eyes is generated by electromagnetic waves with a narrow wavelength range, and electromagnetic waves of different wavelengths show different colors.
当基板1作为太阳能发电瓦的前面板时,该基板1包括朝向太阳能电池芯片300的一面和背向太阳能电池芯片300的一面,如图1所示,该显色层2可以覆盖在该基板1的朝向太阳能电池芯片300的一面上,也可以覆盖在该基板1的背向太阳能电池芯片300的一面上,如图2所示,还可以既覆盖在该基板1的朝向太阳能电池芯片300的一面上,也覆盖在该基板1的背向 太阳能电池芯片300的一面上。覆盖在基板1的朝向太阳能电池芯片300的一面上的显色层2由于被封装在基板1和太阳能电池芯片300之间,不会暴露在外界环境中,避免了风吹、日晒和雨淋,因此使用寿命更长,覆盖在基板1的背向太阳能电池芯片300的一面上的显色层2的使用寿命则相对较短。When the substrate 1 is used as a front panel of a solar power tile, the substrate 1 includes a side facing the solar cell chip 300 and a side facing away from the solar cell chip 300. As shown in FIG. 1, the color rendering layer 2 may cover the substrate 1 The side of the substrate 1 facing the solar cell chip 300 may also be covered on the side of the substrate 1 facing away from the solar cell chip 300, as shown in FIG. 2, or may be covered on the side of the substrate 1 facing the solar cell chip 300. It is also covered on the side of the substrate 1 facing away from the solar cell chip 300. Since the color rendering layer 2 covering the side of the substrate 1 facing the solar cell chip 300 is encapsulated between the substrate 1 and the solar cell chip 300, it will not be exposed to the external environment, avoiding wind, sun and rain. Therefore, the service life is longer, and the service life of the color rendering layer 2 covering the side of the substrate 1 facing away from the solar cell chip 300 is relatively short.
在本申请实施例中,由于该太阳能发电瓦用基底100包括基板1,以及覆盖在该基板1的相对的两个表面中的至少一个表面上的显色层2,且该显色层2可透光,因此,在将该透光的太阳能发电瓦用基底100作为设置在太阳能发电瓦的受光面的前板时,一方面,能够保证有太阳光照射到太阳能电池芯片300上,使太阳能电池芯片300能够吸收太阳光;另一方面,还能够使太阳能发电瓦的受光面呈现彩色(例如,可以为红、橙、黄、绿、蓝、靛和紫中的任意一种颜色),从而能够满足客户需求,在应用时使得建筑更具美感。In the embodiment of the present application, the substrate 100 for a solar power generation tile includes a substrate 1 and a color developing layer 2 covering at least one of two opposite surfaces of the substrate 1, and the color developing layer 2 may be Light transmission, therefore, when the light-transmitting solar power generation tile substrate 100 is used as a front plate provided on the light receiving surface of the solar power generation tile, on the one hand, it is possible to ensure that sunlight is irradiated onto the solar cell chip 300, so that the solar cell The chip 300 can absorb sunlight; on the other hand, the light receiving surface of the solar power tile can also be colored (for example, it can be any one of red, orange, yellow, green, blue, indigo, and purple), so that it can Meet customer needs and make the building more aesthetically pleasing when applied.
本申请的一实施例中,参见图3,该显色层2可以设置为包括:一个显色子层21,该显色子层21可以包括两个或两个以上个膜层211。或者,在另一实施例中,如图4所示,该显色层2包括第一显色子层22以及第二显色子层23;其中,第一显色子层22包括第一膜层2111以及第二膜层2112;第二显色子层23包括第三膜层2113以及第四膜层2114。并且,第一膜层2111与第二膜层2112的折射率不同;第三膜层2113与第四膜层2114的折射率也不相同;第一显色子层22以及第二显色子层23可以设置为呈现相同的色调,或者也可根据所期望显色层2呈现的颜色设置为呈现不同的色调,相对来讲前者设置方式较后者设置方式可以使显色层2的透光率增加。当然,显色层2也可以包括更多个显色子层21,显色子层21也可以包括更多个膜层211,在此不做具体的限定。In an embodiment of the present application, referring to FIG. 3, the color rendering layer 2 may be configured to include: a color rendering sub-layer 21, and the color rendering sub-layer 21 may include two or more film layers 211. Alternatively, in another embodiment, as shown in FIG. 4, the color rendering layer 2 includes a first color rendering sub-layer 22 and a second color rendering sub-layer 23; wherein the first color rendering sub-layer 22 includes a first film. Layer 2111 and second film layer 2112; second color rendering sub-layer 23 includes a third film layer 2113 and a fourth film layer 2114. In addition, the refractive indexes of the first film layer 2111 and the second film layer 2112 are different; the refractive indexes of the third film layer 2113 and the fourth film layer 2114 are also different; the first and second color rendering sublayers 22 and 2114 23 can be set to show the same hue, or it can also be set to show different hue according to the desired color of the color rendering layer 2. Relatively speaking, the former setting method can make the light transmittance of the color rendering layer 2 increase. Of course, the color rendering layer 2 may also include more color rendering sub-layers 21, and the color rendering sub-layer 21 may also include more film layers 211, which is not specifically limited herein.
色调是由物体反射的光线中以哪种波长占优势来决定的,不同波长产生不同颜色的感觉,色调是颜色的重要特征,它决定了颜色本质的根本特征。如红色色调是指显色层2反射的光线中以红光(波长为620-780nm)光谱为主所呈现的颜色。Hue is determined by which wavelength dominates the light reflected by the object. Different wavelengths produce different colors. Hue is an important feature of color and it determines the fundamental characteristics of color. For example, the red hue refers to the color mainly represented by the spectrum of red light (wavelength: 620-780 nm) in the light reflected by the color rendering layer 2.
示例性的,当该显色层2显示红色时,该红色可以为一个显色子层21所显示的红色,也可以为多个显示浅红色的显色子层21叠加后所显示出的红 色,或者也可以为多个显示其他色调的显色子层21叠加后所显示出的红色。Exemplarily, when the color rendering layer 2 displays red, the red color may be red displayed by one color rendering sub-layer 21, or may be red displayed by superposing a plurality of color rendering sub-layers 21 displaying light red. Or, it may also be a red color displayed after a plurality of color-developing sub-layers 21 displaying other colors.
对所述显色子层21的具体结构不做限定,每个所述显色子层21可以为一个膜层211,也可以为多个膜层211。The specific structure of the color rendering sub-layer 21 is not limited, and each color rendering sub-layer 21 may be one film layer 211 or multiple film layers 211.
本申请的第一种实现方式中,一个显色子层21可以包括多个层叠设置的膜层211,每个膜层211由单一材料构成,且多个膜层211中至少有两个膜层211的材料不同。本申请中所述的单一材料是指除去杂质以外的材料为一种。In the first implementation manner of the present application, one color rendering sub-layer 21 may include a plurality of film layers 211 arranged in a stack, each of the film layers 211 is composed of a single material, and at least two of the plurality of film layers 211 are The material of 211 is different. The single material described in the present application means one material except for impurities.
示例性的,每个所述显色子层21中多个所述膜层211的折射率不同,同时,每个显色子层21中膜层211的层叠顺序均相同,且在整个显色层2中,相邻的各膜层211的折射率不同。Exemplarily, the refractive indices of the plurality of film layers 211 in each of the color rendering sub-layers 21 are different, and at the same time, the stacking order of the film layers 211 in each color rendering sub-layer 21 is the same, and In layer 2, the refractive indices of the adjacent film layers 211 are different.
根据期望发电瓦呈现的颜色的不同,离所述基板1最近的膜层211可以是折射率低的膜层211,也可以是折射率高的膜层211。According to the desired color of the power generating tile, the film layer 211 closest to the substrate 1 may be a film layer 211 with a low refractive index or a film layer 211 with a high refractive index.
在一示例中,所述显色层2可以包括2个显色子层21,每一显色子层21包括2个膜层211:A膜层和B膜层。每一显色子层21中的A膜层和B膜层均按照以下两种顺序中的一种依次层叠设置:A膜层—B膜层,B膜层—A膜层;该示例中,以上两种顺序中,第一个膜层是该2个膜层中离基板1表面最近的膜层,第二个膜层覆盖在第一个膜层的远离基板1表面的一侧,即是该2个膜层中离基板1表面最远的膜层。In an example, the color rendering layer 2 may include two color rendering sub-layers 21, and each color rendering sub-layer 21 includes two film layers 211: an A film layer and a B film layer. The A film layer and the B film layer in each color developing sub-layer 21 are sequentially stacked in one of the following two orders: A film layer—B film layer, B film layer—A film layer; in this example, In the above two sequences, the first film layer is the film layer closest to the surface of the substrate 1 among the two film layers, and the second film layer covers the side of the first film layer away from the surface of the substrate 1, that is, The film layer farthest from the surface of the substrate 1 among the two film layers.
在另一示例中,所述显色层2可以包括3个显色子层21,每一显色子层21包括3个膜层211:A膜层、B膜层和C膜层。每一显色子层21中的该3个膜层均按照以下6种顺序中的一种依次层叠设置:In another example, the color rendering layer 2 may include three color rendering sub-layers 21, and each color rendering sub-layer 21 includes three film layers 211: an A film layer, a B film layer, and a C film layer. The three film layers in each color-developing sub-layer 21 are sequentially stacked in accordance with one of the following six sequences:
A膜层—B膜层—C膜层;A film layer—B film layer—C film layer;
A膜层—C膜层—B膜层;A film layer—C film layer—B film layer;
B膜层—A膜层—C膜层;B film layer—A film layer—C film layer;
B膜层—C膜层—A膜层;B film layer—C film layer—A film layer;
C膜层—A膜层—B膜层;C film layer—A film layer—B film layer;
C膜层—B膜层—A膜层;C film layer—B film layer—A film layer;
该示例中,以上6种顺序中,第一个膜层是该3个膜层中离基板1表面最近的膜层。第二个膜层覆盖在第一个膜层远离基板1表面的一侧,第三个膜层覆盖在第二个膜层远离基板1表面的一侧,即是该3个膜层中离基板1表面最远的膜层。根据期望发电瓦呈现的颜色的不同,第一个膜层可以是该3个膜层中折射率最低的膜层,也可以是该3个膜层中折射率最高的膜层。In this example, in the above six sequences, the first film layer is the film layer closest to the surface of the substrate 1 among the three film layers. The second film layer covers the side of the first film layer away from the surface of the substrate 1, and the third film layer covers the side of the second film layer away from the surface of the substrate 1. That is, the three film layers are away from the substrate. 1 the farthest layer on the surface. According to the different colors expected of the power generating tile, the first film layer may be the film layer with the lowest refractive index among the three film layers, or the film layer with the highest refractive index among the three film layers.
示例性的,所述膜层211可以选自二氧化硅层、五氧化三钛层、氟化镁层、硫化锌层、三氧化二铝层、二氧化钛层、三氧化二钛层、三氧化二铬层、二氧化锆层、硫酸镧层中的任意一种。Exemplarily, the film layer 211 may be selected from a silicon dioxide layer, a titanium trioxide layer, a magnesium fluoride layer, a zinc sulfide layer, an aluminum oxide layer, a titanium dioxide layer, a titanium oxide layer, and a titanium oxide layer. Any one of a chromium layer, a zirconium dioxide layer, and a lanthanum sulfate layer.
示例性的,每个所述显色子层21可以包括两个层叠设置的膜层211,并且其中一个所述膜层211的折射率高于另一个所述膜层211的折射率。Exemplarily, each of the color developing sub-layers 21 may include two film layers 211 disposed in a stack, and a refractive index of one of the film layers 211 is higher than a refractive index of the other of the film layers 211.
理论上,为使单个显色子层21呈现出明显的颜色,相邻的两个膜层211的折射率相差越大越好。示例性的,每个所述显色子层21可以包括两个层叠设置的膜层211,并且其中一个所述膜层211的折射率比另一个所述膜层211的折射率高至少0.5,在所述两个膜层211中,折射率高的所述膜层211离所述基板1表面最近,或者折射率低的所述膜层211离所述基板1表面最近。Theoretically, in order to make a single color-developing sub-layer 21 show a clear color, the larger the difference between the refractive indexes of two adjacent film layers 211 is, the better. Exemplarily, each of the color rendering sub-layers 21 may include two film layers 211 disposed in a stack, and a refractive index of one of the film layers 211 is at least 0.5 higher than a refractive index of the other film layer 211. Among the two film layers 211, the film layer 211 having a high refractive index is closest to the surface of the substrate 1, or the film layer 211 having a low refractive index is closest to the surface of the substrate 1.
示例性的,每个所述显色子层21可以包括两个层叠设置的膜层211,所述两个膜层211可以分别为五氧化三钛层和二氧化硅层。Exemplarily, each of the color developing sub-layers 21 may include two film layers 211 disposed in a stack, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively.
示例性的,每个所述显色子层21可以包括两个层叠设置的膜层211,所述两个膜层211可以分别为氟化镁层(折射率约为1.38)和硫化锌层(折射率约为2.4)。Exemplarily, each of the color developing sub-layers 21 may include two film layers 211 arranged in a stack, and the two film layers 211 may be a magnesium fluoride layer (refractive index is about 1.38) and a zinc sulfide layer ( The refractive index is about 2.4).
示例性的,每个所述显色子层21可以包括三个层叠设置的膜层211,所述三个膜层211可以分别为五氧化三钛层、二氧化硅层和硫酸镧层。Exemplarily, each of the color developing sub-layers 21 may include three film layers 211 arranged in a stack, and the three film layers 211 may be a titanium trioxide layer, a silicon dioxide layer, and a lanthanum sulfate layer, respectively.
示例性的,如图3和图4所示,显色层2可以包括一个显色子层21(如图3所示)或包括两个层叠设置且呈现相同色调的显色子层21(如图4所示),每个显色子层21可以包括两个层叠设置的膜层211,两个该膜层211可以分别为五氧化三钛层和二氧化硅层。在图4的显色层2中,五氧化三钛层和二氧化硅层呈交替设置。Exemplarily, as shown in FIGS. 3 and 4, the color rendering layer 2 may include one color rendering sub-layer 21 (as shown in FIG. 3) or two color rendering sub-layers 21 (such as As shown in FIG. 4), each of the color developing sub-layers 21 may include two film layers 211 arranged in a stack, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively. In the color developing layer 2 of FIG. 4, the titanium trioxide layer and the silicon dioxide layer are alternately disposed.
实际操作中,可根据期望单个显色子层21显示的颜色,通过膜系设计对 膜层材料、膜层厚度、不同材料膜层的层叠顺序等进行改变而得到。而根据期望显色层2最终显示的颜色,来设计多个显色子层21各自所显示的色调。In actual operation, the material of the film layer, the thickness of the film layer, and the stacking order of the film layers of different materials can be obtained by changing the film system design according to the desired color displayed by the single color-developing sublayer 21. And according to the color that is expected to be finally displayed by the color developing layer 2, the hue displayed by each of the plurality of color developing sub-layers 21 is designed.
本申请的第二种实现方式中,参见图5,一个复合膜层212形成一个显色子层21,该复合膜层212可以由多种不同的材料按照预定比例混合而成。这里的不同的材料中的每一种材料也可以看作为单一材料,本实现方式中的单一材料也是指除去杂质以外的材料为一种。In a second implementation manner of the present application, referring to FIG. 5, a composite film layer 212 forms a color rendering sub-layer 21, and the composite film layer 212 may be formed by mixing different materials in a predetermined ratio. Each of the different materials here can also be regarded as a single material. The single material in this implementation manner also means that a material other than impurities is one.
当然,一个显色子层21也可以包括多个复合膜层212,显色层2也可以包括多个显色子层21,在此不做具体的限定。Of course, one color rendering sub-layer 21 may also include multiple composite film layers 212, and the color rendering layer 2 may also include multiple color rendering sub-layers 21, which is not specifically limited herein.
示例性的,该复合膜层212可以由五氧化三钛和二氧化硅以预定比例混合而成。Exemplarily, the composite film layer 212 may be formed by mixing titanium trioxide and silicon dioxide in a predetermined ratio.
在实际应用中,显色层2的颜色深浅与该显色层2的厚度有关。当显色层2包括一个显色子层21时,该显色子层21的厚度即为该显色层2的厚度,而当显色层2包括多个层叠设置的显色子层21时,单个显色子层21的厚度和显色子层21的个数共同决定该显色层2的厚度。In practical applications, the color depth of the color developing layer 2 is related to the thickness of the color developing layer 2. When the color rendering layer 2 includes a color rendering sub-layer 21, the thickness of the color rendering sub-layer 21 is the thickness of the color rendering layer 2, and when the color rendering layer 2 includes a plurality of color rendering sub-layers 21 arranged in a stack, The thickness of a single color rendering sub-layer 21 and the number of color rendering sub-layers 21 jointly determine the thickness of the color rendering layer 2.
为了在显示较深的颜色时,能够更好地提高光线的透过率,示例性的,膜层211的厚度可以介于80-230nm之间,显色层2中包括的膜层211的个数可以介于6-12个之间,例如介于8-12个之间。透光率是表示光线透过介质的能力,是透过透明或半透明体的光通量与其入射光通量的百分率。In order to improve the transmittance of light when displaying deeper colors, for example, the thickness of the film layer 211 may be between 80-230 nm. Each of the film layers 211 included in the color rendering layer 2 The number can be between 6-12, for example between 8-12. Light transmittance refers to the ability of light to pass through a medium, and is the percentage of the luminous flux passing through a transparent or translucent body and its incident luminous flux.
本申请的又一实施例中,太阳能发电瓦用基底100的透光率介于50-91.5%之间,太阳能发电瓦用基底100能够在显示颜色的同时达到较高的透光率。In yet another embodiment of the present application, the light transmittance of the substrate 100 for solar power generation tiles is between 50-91.5%, and the substrate 100 for solar power generation tiles can achieve high light transmittance while displaying colors.
其中,对该基板1的材质不做限定,该基板1可以为玻璃材质,也可以为塑料材质。The material of the substrate 1 is not limited, and the substrate 1 may be a glass material or a plastic material.
示例性的,该基板1可以为超白玻璃,例如为钢化超白玻璃。超白玻璃是一种超透明低铁玻璃,同时具备优质浮法玻璃所具有的一切可加工性能,具有优越的物理、机械及光学性能,可像其它优质浮法玻璃一样进行各种深加工,透光率可达91.5%以上。Exemplarily, the substrate 1 may be ultra-white glass, such as tempered ultra-white glass. Ultra-white glass is a kind of ultra-transparent low-iron glass. It also has all the processability of high-quality float glass. It has superior physical, mechanical and optical properties. It can be processed like various other high-quality float glass. The light rate can reach above 91.5%.
本申请实施例还提供了一种太阳能发电瓦,参见图6,所述发电瓦包括: 太阳能电池芯片300;以及位于所述太阳能电池芯片300相对两侧的背板500和如上所述的太阳能发电瓦用基底100。An embodiment of the present application further provides a solar power generation tile. Referring to FIG. 6, the power generation tile includes: a solar cell chip 300; and a back plate 500 on opposite sides of the solar cell chip 300 and the solar power generation as described above Tile with substrate 100.
本申请实施例提供的太阳能发电瓦,采用上述透光的太阳能发电瓦用基底100作为设置在太阳能发电瓦的受光面的前板,一方面,能够保证有太阳光照射到太阳能电池芯片300上,使太阳能电池芯片300能够吸收太阳光;另一方面,还能够使太阳能发电瓦的受光面呈现彩色(可以为红、橙、黄、绿、蓝、靛和紫中的任意一种颜色),从而能够满足客户需求,在应用时使得建筑更具美感。The solar power generation tile provided in the embodiment of the present application uses the above-mentioned transparent solar power generation base substrate 100 as a front plate provided on the light receiving surface of the solar power generation tile. On the one hand, it can ensure that sunlight is irradiated onto the solar cell chip 300. The solar cell chip 300 can absorb sunlight; on the other hand, the light receiving surface of the solar power generation tile can also be colored (can be any one of red, orange, yellow, green, blue, indigo, and purple), so that It can meet the needs of customers and make the building more beautiful when applied.
太阳能电池芯片300与背板500和太阳能发电瓦用基底100之间可以通过封装胶膜600实现封装。其中,封装胶膜600可采用热熔型封装胶膜,在160℃温度下融化。The solar cell chip 300 and the back plate 500 and the substrate 100 for solar power generation tiles can be packaged by a packaging adhesive film 600. The encapsulating film 600 may be a hot-melt type encapsulating film and melts at a temperature of 160 ° C.
封装胶膜600可以为乙烯-辛烯的共聚物(Polyolefin Elastomer,POE)胶膜或者乙烯-醋酸乙烯共聚物(Polyethylene Vinylacetate,EVA)胶膜。其中,POE胶膜或者EVA胶膜在层压过程中实现对太阳能电池芯片300、背板500和太阳能发电瓦用基底100的粘接。The encapsulant film 600 may be an ethylene-octene copolymer (PoE) copolymer film or an ethylene-vinyl acetate (EVA) film. Among them, the POE film or the EVA film realizes adhesion to the solar cell chip 300, the back plate 500, and the substrate 100 for solar power generation tiles during the lamination process.
太阳能发电瓦用基底100和太阳能电池芯片300之间还可以设置有防水胶膜700,该防水胶膜700可以由丁基胶形成。A waterproof adhesive film 700 may be further provided between the substrate 100 for solar power generation tiles and the solar cell chip 300, and the waterproof adhesive film 700 may be formed of butyl rubber.
为了实现子太阳能电池芯片300的串联,该背板500和太阳能电池芯片300之间还可以设置汇流条800。In order to realize the series connection of the sub solar cell chips 300, a bus bar 800 may be further disposed between the back plate 500 and the solar cell chip 300.
本申请实施例还提供了一种如上所述的太阳能发电瓦用基底100的制备方法,包括:制备所述基板1;以及在该基板1的相对两个表面中的至少一个表面上形成所述显色层2。The embodiment of the present application further provides a method for preparing a substrate 100 for a solar power generation tile as described above, including: preparing the substrate 1; and forming the substrate 1 on at least one of two opposite surfaces of the substrate 1. Color rendering layer 2.
本申请实施例中,基板1可以为曲面状或平面状,以下以曲面状为例说明。In the embodiment of the present application, the substrate 1 may have a curved shape or a planar shape, and a curved shape is taken as an example for description below.
本申请实施例提供一种太阳能发电瓦用基底100的制备方法,制备所获得的太阳能发电瓦用基底100能够使太阳能发电瓦的受光面呈现彩色,从而能够满足客户需求,在应用时使得建筑更具美感。The embodiment of the present application provides a method for preparing a substrate 100 for a solar power generation tile. The obtained substrate 100 for a solar power generation tile can make the light receiving surface of the solar power generation tile appear colored, so as to meet customer requirements, and make the building more useful during application. With beauty.
由于太阳能发电瓦通常通过仿传统烧结瓦、陶土瓦、琉璃瓦而做出各种 造型,如曲面瓦、筒瓦、S型瓦等。因此,通常在平板状基板1上进行镀膜来制备彩色基板1,根据加工工艺主要分为在线镀膜和离线镀膜两种。在线镀膜是指镀膜的工艺过程是在浮法玻璃制造过程中进行,通过磁控溅射喷涂膜。离线镀膜是在平板状基板1出厂后,再进行镀膜加工。较之在线镀膜,离线镀膜得到的膜的牢固度必然会受到影响。As the solar power generation tile is usually made of various shapes such as curved tile, tube tile, S-shaped tile, etc. by imitating the traditional sintered tile, clay tile, and glazed tile. Therefore, the color substrate 1 is usually prepared by coating on the flat substrate 1, and is mainly divided into two types: online coating and offline coating according to processing processes. On-line coating refers to the process of coating is performed in the float glass manufacturing process, and the film is sprayed by magnetron sputtering. The offline coating is performed after the flat substrate 1 is shipped from the factory. Compared with on-line coating, the firmness of the film obtained by off-line coating is bound to be affected.
磁控溅射镀膜就是在真空中利用荷能粒子轰击靶表面,使被轰击出的粒子沉积在基片上的技术。Magnetron sputtering coating technology is a technology that uses charged particles to bombard the target surface in a vacuum, so that the bombarded particles are deposited on the substrate.
太阳能发电瓦因为造型要求,需要进行热弯、冷却(可以为退火或钢化,热弯成型的玻璃基板经过急速吹风冷却即完成钢化),如果太阳能发电瓦采用在线镀膜或离线镀膜所获得的平板状镀膜基板,在热弯的过程时,加热炉将镀膜基板持续加热至熔融状态(当该镀膜基板为玻璃时,熔融状态的加热温度为690~730℃),然后进入模具挤压成型得到曲面状的基板。Because of the shape requirements of solar power tiles, they need to be bent and cooled (can be annealed or tempered, and hot-formed glass substrates can be tempered by rapid blow cooling). If the solar power tiles are plate-shaped obtained by online or offline coating For the coated substrate, during the process of hot bending, the heating furnace continuously heats the coated substrate to a molten state (when the coated substrate is glass, the heating temperature in the molten state is 690-730 ° C), and then enters the die extrusion molding to obtain a curved shape. Of the substrate.
不管是哪种镀膜玻璃,在此基板熔融温度下,膜均会融化而导致脱模。脱模是指基板上的膜由于各种外力、温度等原因而开裂、融化等造成的和基板脱离、剥落等的现象。如果降低进入模具时的温度到膜融化温度以下,则不好成型,良品率低。即便是增加成本以提高膜的融化温度,在模具中弯曲成型时,膜还是会由于基板的曲率的挤压或者拉伸而发生开裂。同样不能适用于太阳能发电瓦美观的要求。No matter what kind of coated glass is, at this substrate melting temperature, the film will melt and cause mold release. Demolding refers to the phenomenon that the film on the substrate is cracked or melted due to various external forces, temperature, etc., and the substrate is detached or peeled off. If the temperature at the time of entering the mold is lower than the melting temperature of the film, molding will be difficult and the yield will be low. Even if the cost is increased to increase the melting temperature of the film, the film will crack due to the extrusion or stretching of the curvature of the substrate when it is bent in a mold. The same cannot be applied to the aesthetic requirements of solar power tiles.
而在本申请实施例中,通过先将基板1制备成曲面状,再在曲面状基板1上镀膜的方法形成膜(即本申请实施例中的显色层2),避免了先镀膜,后将基板1制作成曲面状时由于基板1的曲率的挤压或者拉伸而发生脱模现象。In the embodiment of the present application, a film is formed by first preparing the substrate 1 into a curved shape, and then coating the curved surface on the curved substrate 1 (that is, the color rendering layer 2 in the embodiment of the present application), thereby avoiding first coating and then When the substrate 1 is formed into a curved shape, a demolding phenomenon occurs due to the curvature or extrusion of the substrate 1.
其中,可以通过热弯法、冷弯法等各种方法制备曲面状的基板1,在此不做限定。The curved substrate 1 can be prepared by various methods such as a hot bending method and a cold bending method, which is not limited herein.
本申请的实施例中,所述制备曲面状的基板1步骤,可以包括:将平板状基板1进行热弯和冷却(可以为退火工艺,也可以为钢化工艺),获得所述曲面状的基板1。In the embodiment of the present application, the step of preparing a curved substrate 1 may include: hot bending and cooling the flat substrate 1 (either an annealing process or a tempering process) to obtain the curved substrate. 1.
热弯是指将平板状基板1加热软化并在模具中成型,制成曲面的工艺,热弯后冷却完成钢化。其中,退火是指在经过转变温度区域(Tf-Tg)时,玻璃由典型的液态转变成脆性状态,而在Tg点以下的相当的温度范围内玻璃 分子仍然能够迁移,可以消除玻璃中的热应力和结构状态的不均匀性,这段温度区域即为玻璃的退火区域,即退火区域与玻璃粘度有关。钢化则是指将玻璃加热到软化温度以下,Tg点以上50-60℃时进行快速、均匀冷却获得,能够增加硬度。在实际应用中,可以将基板1加热至熔融状态,通过上、下模具挤压成设计的形状,再经退火或者钢化而获得基板1。Hot bending refers to the process of heating and softening the flat substrate 1 and forming it in a mold to make a curved surface. After the hot bending, the steel sheet is cooled to complete the tempering. Among them, annealing refers to the transition of the glass from a typical liquid state to a brittle state when passing through the transition temperature region (Tf-Tg), and the glass molecules can still migrate within a considerable temperature range below the Tg point, which can eliminate the heat in the glass Inhomogeneity of stress and structural state, this temperature region is the annealing region of the glass, that is, the annealing region is related to the viscosity of the glass. Tempering refers to heating the glass below the softening temperature, and obtaining it by rapid and uniform cooling at 50-60 ° C above the Tg point, which can increase the hardness. In practical applications, the substrate 1 can be heated to a molten state, extruded into a designed shape through upper and lower dies, and then annealed or tempered to obtain the substrate 1.
示例性的,基板1可以为钢化基板1。钢化基板1硬度较高。Exemplarily, the substrate 1 may be a tempered substrate 1. The tempered substrate 1 has high hardness.
对在该基板1的相对两个表面中的至少一个表面上形成所述显色层2的具体方法不做限定,只要能够将显色层2形成在该基板1的相对两个表面中的至少一个表面上即可。例如,可以采用电子束蒸发镀膜法在基板1的相对两个表面中的至少一个表面上形成显色层2,也可以采用磁控溅射镀膜法形成所述显色层2。The specific method of forming the color developing layer 2 on at least one of the two opposite surfaces of the substrate 1 is not limited, as long as the color developing layer 2 can be formed on at least one of the two opposite surfaces of the substrate 1. On one surface. For example, the color-developing layer 2 may be formed on at least one of two opposite surfaces of the substrate 1 by an electron beam evaporation coating method, and the color-developing layer 2 may also be formed by a magnetron sputtering coating method.
在本申请的实施例中,所述在所述曲面状的基板1的相对两个表面中的至少一个表面上形成所述显色层2步骤,包括:采用电子束轰击法对靶材(即蒸发材料)进行加热,使得靶材蒸发并沉积在该曲面状的基板1的相对两个表面中的至少一个表面上,形成所述显色层2。In the embodiment of the present application, the step of forming the color developing layer 2 on at least one of two opposite surfaces of the curved substrate 1 includes: using an electron beam bombardment method to target (i.e., Evaporation material) is heated so that the target material is evaporated and deposited on at least one of the two opposite surfaces of the curved substrate 1 to form the color developing layer 2.
在采用磁控溅镀膜法沉积膜时,膜在基板1的表面沉积的速度快,由于太阳能发电瓦通常为曲面的,随着沉积的进行,曲面的波峰波谷的膜的厚度差随着镀膜时间推移越来越大,膜的均匀性不好控制,因此,磁控溅射镀膜更多的应用于平面镀膜。而电子束蒸发镀膜是指利用电子束轰击坩埚内的靶材,以使得靶材融化蒸发并沉积在基板1上的镀膜方法,该方法能够更加精准地实现蒸镀,可以镀出高纯度高精度的薄膜。采用电子束蒸发镀膜法进行镀膜时,膜在基板1表面沉积的速度慢,随着蒸镀的进行,沉积在波峰和波谷的膜厚度差别不明显,均匀性好控制,适合于曲面镀膜。因此,本申请实施例中采用电子束蒸发镀膜能够更好地对膜的厚度进行调节。When the film is deposited using the magnetron sputtering method, the deposition speed of the film on the surface of the substrate 1 is fast. Since the solar power generation tile is generally curved, as the deposition progresses, the thickness difference between the curved peaks and troughs of the film varies with the coating time. The process is getting larger and larger, and the uniformity of the film is not easy to control. Therefore, the magnetron sputtering coating is more applied to the flat coating. The electron beam evaporation coating refers to a coating method in which a target material in a crucible is bombarded with an electron beam, so that the target material melts and evaporates and is deposited on the substrate 1. This method can more accurately achieve evaporation, and can be plated with high purity and high precision. Thin film. When the electron beam evaporation coating method is used for coating, the deposition rate of the film on the surface of the substrate 1 is slow. With the progress of the evaporation, there is no obvious difference in the thickness of the film deposited on the peak and trough, and the uniformity is well controlled, which is suitable for curved surface coating. Therefore, the thickness of the film can be better adjusted by using the electron beam evaporation coating in the embodiment of the present application.
采用电子束蒸发镀膜所形成的膜可耐300℃高温,远高于对太阳能发电瓦的封装层压过程中的加热温度(通常为160℃),能够防止膜在层压过程中发生开裂、脱膜等现象。The film formed by electron beam evaporation coating can withstand a high temperature of 300 ° C, which is much higher than the heating temperature (typically 160 ° C) during the packaging and lamination of solar power tiles, which can prevent the film from cracking and peeling during the lamination process. Film and other phenomena.
示例性的,在本申请实施例的电子束蒸发镀膜过程中,所述靶材沉积到所述曲面状的基板1上的温度可以为60-80℃。即,靶材的成膜温度(也就 是靶材在基板1上的凝结温度)可以为60-80℃,该温度可以使形成的膜的致密性较好。Exemplarily, during the electron beam evaporation coating process of the embodiment of the present application, the temperature at which the target is deposited on the curved substrate 1 may be 60-80 ° C. That is, the film formation temperature of the target (that is, the condensation temperature of the target on the substrate 1) can be 60-80 ° C, and this temperature can make the formed film denser.
示例性的,在本申请实施例中,采用电子束蒸发镀膜法形成所述显色层2的过程在真空状态的反应腔室内进行,其中,反应腔室的真空度可以≤10 -2Pa,例如,可以为5×10 -3-7×10 -3Pa。 Exemplarily, in the embodiment of the present application, the process of forming the color developing layer 2 by an electron beam evaporation coating method is performed in a reaction chamber in a vacuum state, wherein the vacuum degree of the reaction chamber may be ≤10 -2 Pa, For example, it may be 5 × 10 -3 -7 × 10 -3 Pa.
在本申请的又一实施例中,形成所述显色层2之后,该制备方法还可以包括:对该显色层2和曲面状的基板1进行加热,用于提高显色层2和基板1的结合强度。In another embodiment of the present application, after the color developing layer 2 is formed, the preparation method may further include: heating the color developing layer 2 and the curved substrate 1 to improve the color developing layer 2 and the substrate. 1 bonding strength.
上述形成显色层2之后,对所述显色层2和所述曲面状的基板1进行加热的温度可以根据该显色层2和该基板1的材质进行合理设置。示例性的,该加热的温度可以为200-400℃。例如,加热的温度可以为200℃、250℃、300℃、350℃和400℃中的任意一个温度。该加热的温度越高,显色层2和基板1的结合强度越好,而且在400℃下显色层2也不会融化,因此不会发生脱模现象。After the color developing layer 2 is formed, the temperature for heating the color developing layer 2 and the curved substrate 1 can be set reasonably according to the materials of the color developing layer 2 and the substrate 1. Exemplarily, the heating temperature may be 200-400 ° C. For example, the heating temperature may be any one of 200 ° C, 250 ° C, 300 ° C, 350 ° C, and 400 ° C. The higher the heating temperature, the better the bonding strength between the color-developing layer 2 and the substrate 1, and the color-developing layer 2 will not melt at 400 ° C, so that no mold release phenomenon will occur.
在本申请的又一实施例中,所述采用电子束轰击法对靶材进行加热,使得靶材蒸发并沉积在曲面状的基板1的相对两个表面中的至少一个表面上,形成所述显色层2步骤之前,所述制备方法还可以包括:采用离子束轰击所述曲面状的基板1的待镀膜表面(即所述基板1的待形成显色层2的表面),以对所述曲面状的基板1的待镀膜表面进行清洁和粗糙化处理。该处理能够对所述曲面状的基板1的待镀膜表面的毛刺、脏污进行去除,通过粗糙化处理还能够提高膜在基板1上的附着力。离子束轰击待镀膜表面可以使所述曲面状的基板1的待镀膜表面形成凹坑,提高了待镀膜表面的粗糙度。In still another embodiment of the present application, the target is heated by using an electron beam bombardment method, so that the target is evaporated and deposited on at least one of two opposite surfaces of the curved substrate 1 to form the target. Before the color developing layer 2 step, the preparation method may further include: using an ion beam to bombard the surface of the curved substrate 1 to be coated (that is, the surface of the substrate 1 on which the color developing layer 2 is to be formed) to The surface of the curved substrate 1 to be coated is cleaned and roughened. This process can remove burrs and dirt on the surface of the curved substrate 1 to be coated, and can also improve the adhesion of the film to the substrate 1 through the roughening process. Ion beam bombarding the surface to be coated can form pits on the surface of the curved substrate 1 to be coated, thereby improving the roughness of the surface to be coated.
在本申请的一实施例中,所述在所述曲面状的基板1的相对两个表面中的至少一个表面上形成所述显色层2步骤,可以包括:在所述曲面状的基板1的相对两个表面中的至少一个表面上形成一个显色子层21或者多个层叠设置的显色子层21。In an embodiment of the present application, the step of forming the color developing layer 2 on at least one of two opposite surfaces of the curved substrate 1 may include: forming the curved substrate 1. One or more color developing sub-layers 21 are formed on at least one of the two opposite surfaces.
其中,所述在所述曲面状的基板1的相对两个表面中的至少一个表面上形成一个显色子层21,可以采用两种实现方式。Wherein, the formation of a color rendering sub-layer 21 on at least one of two opposite surfaces of the curved substrate 1 may be implemented in two ways.
在第一种实现方式中,可以将多种不同的材料按照预定比例进行同时蒸 镀,以获得一个所述显色子层21。例如,可以将不同的材料按照预定比例分别放置于不同的坩埚内,通过控制各个坩埚的温度及所放置材料的沸点,实现不同的材料的同时蒸镀。In the first implementation manner, a plurality of different materials may be simultaneously evaporated according to a predetermined ratio to obtain one of the color developing sub-layers 21. For example, different materials can be placed in different crucibles according to a predetermined ratio, and the simultaneous evaporation of different materials can be achieved by controlling the temperature of each crucible and the boiling point of the placed materials.
示例性的,该显色子层21可以由五氧化三钛和二氧化硅以预定比例混合而成。Exemplarily, the color developing sub-layer 21 may be formed by mixing titanium trioxide and silicon dioxide in a predetermined ratio.
在第二种实现方式中,可以将多种不同的材料按照预定比例依次进行蒸镀,以获得一个所述显色子层21。例如,可以将第一种材料蒸镀至基板1上之后,再将第二种材料蒸镀至第一种材料形成的膜表面上,依次类推,直至将多种材料蒸镀至基板1上。本实施例的蒸镀过程中,采用电子束蒸发镀膜法,与磁控溅射镀膜法相比,有利于对显色子层21中各种不同的材料的厚度进行很好地控制,使得相同厚度的显色层2可以由较薄的材料层叠加而成,这样一来,采用电子束蒸发镀膜法所获得的膜的层数可以更多,从而使显色层2的颜色的深浅变化范围也更宽,进而使得色彩更加饱满、艳丽。In a second implementation manner, a plurality of different materials may be sequentially evaporated in accordance with a predetermined ratio to obtain one of the color developing sub-layers 21. For example, after the first material is vapor-deposited on the substrate 1, the second material is vapor-deposited on the surface of the film formed by the first material, and so on, until a plurality of materials are vapor-deposited on the substrate 1. In the evaporation process of this embodiment, the electron beam evaporation coating method is adopted, which is better than the magnetron sputtering coating method, which is good for controlling the thickness of various materials in the color rendering sublayer 21 so that the same thickness The color developing layer 2 can be formed by stacking thinner material layers. In this way, the number of layers obtained by the electron beam evaporation coating method can be more, so that the range of color depth of the color developing layer 2 can also be changed. Wider, which makes the color fuller and more beautiful.
示例性的,一个所述显色子层21可以包括两个膜层211,两个膜层211可以分别为五氧化三钛层和二氧化硅层。例如,当显色子层21所呈现的色调为蓝色时,两个该膜层211(五氧化三钛层和二氧化硅层)的厚度比可以为30:100-95:100,可选的,两个该膜层211(五氧化三钛层和二氧化硅层)的厚度比可以为40:70-50:70,当显色子层21所呈现的色调为黄色时,两个该膜层211(五氧化三钛层和二氧化硅层)的厚度比可以为0.5-0.95,可选的,两个该膜层211(五氧化三钛层和二氧化硅层)的厚度比也可以为a:b,其中a的取值范围可以为65-70,b的取值范围可以为90-100,当显色子层21所呈现的色调为红色时,两个该膜层211(五氧化三钛层和二氧化硅层)的厚度比可以为80:130-95:130。Exemplarily, one of the color rendering sub-layers 21 may include two film layers 211, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively. For example, when the color tone presented by the color rendering sub-layer 21 is blue, the thickness ratio of the two film layers 211 (titanium trioxide layer and silicon dioxide layer) may be 30: 100-95: 100, which is optional. The thickness ratio of the two film layers 211 (titanium pentoxide layer and silicon dioxide layer) may be 40: 70-50: 70. When the hue presented by the color rendering sub-layer 21 is yellow, the two The thickness ratio of the film layer 211 (the titanium trioxide layer and the silicon dioxide layer) may be 0.5-0.95. Optionally, the thickness ratio of two film layers 211 (the titanium titanium oxide layer and the silicon dioxide layer) is also It can be a: b, where the range of a can be 65-70, and the range of b can be 90-100. When the hue presented by the color rendering sub-layer 21 is red, two of the film layers 211 ( The thickness ratio of the titanium trioxide layer and the silicon dioxide layer can be 80: 130-95: 130.
示例性的,当显色子层21所呈现的色调为蓝色时,五氧化三钛层与二氧化硅层的厚度之比可以为40:70-50:70这个范围内的任意值,例如可以为40:70,示例的,五氧化三钛层可以为40nm,二氧化硅层可以为70nm;例如可以为42:60,示例的,五氧化三钛层可以为42nm,二氧化硅层可以为60nm,例如还可以为45:70或者50:70,与该示例均相同,五氧化三钛层和二氧化硅层的厚度单位可以是纳米级。当显色子层21所呈现的色调为黄色时,五氧化 三钛层与二氧化硅层的厚度之比可以为0.5-0.95这个范围内的任意值,可选的,五氧化三钛层与二氧化硅层的厚度之比可以为60:100-70:90这个范围内的任意值,例如可以为65:90,示例的,五氧化三钛层可以为65nm,二氧化硅层可以为90nm;例如五氧化三钛层与二氧化硅层的厚度之比可以为0.7,示例的,五氧化三钛层可以为92nm,二氧化硅层可以为131nm;例如还可以为70:100、70:90或者70:100,与该示例均相同,五氧化三钛层和二氧化硅层的厚度单位可以是纳米级。当显色子层21所呈现的色调为红色时,五氧化三钛层与二氧化硅层的厚度之比可以为80:130-95:130这个范围内的任意值,例如可以为80:130,示例的,五氧化三钛层可以为80nm,二氧化硅层可以为130nm,例如可以为69:100,示例的,五氧化三钛层可以为220nm,二氧化硅层可以为321nm,例如还可以为90:130或者95:130,与该示例均相同,五氧化三钛层和二氧化硅层的厚度单位可以是纳米级。Exemplarily, when the hue exhibited by the color rendering sub-layer 21 is blue, the thickness ratio of the titanium trioxide layer to the silicon dioxide layer can be any value in the range of 40: 70-50: 70, for example, It can be 40:70. For example, the titanium trioxide layer can be 40nm and the silicon dioxide layer can be 70nm. For example, it can be 42:60. For example, the titanium trioxide layer can be 42nm and the silicon dioxide layer can be It is 60 nm, for example, 45:70 or 50:70, which is the same as this example. The thickness unit of the titanium trioxide layer and the silicon dioxide layer may be nanometers. When the hue exhibited by the color developing sub-layer 21 is yellow, the ratio of the thickness of the titanium trioxide layer to the silicon dioxide layer can be any value within the range of 0.5-0.95. Optionally, the titanium trioxide layer and the The thickness ratio of the silicon dioxide layer can be any value in the range of 60: 100-70: 90, for example, 65:90. For example, the titanium trioxide layer can be 65nm, and the silicon dioxide layer can be 90nm. For example, the thickness ratio of the titanium trioxide layer to the silicon dioxide layer may be 0.7. For example, the titanium trioxide layer may be 92 nm, and the silicon dioxide layer may be 131 nm; for example, it may be 70: 100, 70: 90 or 70: 100, as in this example, the unit of thickness of the titanium trioxide layer and the silicon dioxide layer may be in the nanometer order. When the hue exhibited by the color rendering sub-layer 21 is red, the thickness ratio of the titanium trioxide layer to the silicon dioxide layer can be any value in the range of 80: 130-95: 130, for example, it can be 80: 130 For example, the titanium trioxide layer can be 80 nm, the silicon dioxide layer can be 130 nm, for example, 69: 100, and for example, the titanium trioxide layer can be 220 nm, and the silicon dioxide layer can be 321 nm. It can be 90: 130 or 95: 130, which is the same as this example. The thickness of the titanium trioxide layer and the silicon dioxide layer can be in nanometers.
示例性的,一个所述显色子层21可以包括两个膜层211,两个膜层211可以分别为五氧化三钛层和二氧化硅层。例如,当显色子层21所呈现的色调为蓝色时,二氧化硅层的厚度可以为40-50nm,五氧化三钛层的厚度可以为70nm;当显色子层21所呈现的色调为黄色时,二氧化硅层的厚度可以为60-70nm,五氧化三钛层的厚度可以为90-100nm;当显色子层21所呈现的色调为红色时,二氧化硅层的厚度可以为80-95nm,五氧化三钛层的厚度可以为130nm。Exemplarily, one of the color rendering sub-layers 21 may include two film layers 211, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively. For example, when the hue exhibited by the color developing sub-layer 21 is blue, the thickness of the silicon dioxide layer may be 40-50 nm, and the thickness of the titanium trioxide layer may be 70 nm; When it is yellow, the thickness of the silicon dioxide layer can be 60-70nm, and the thickness of the titanium trioxide layer can be 90-100nm. When the hue exhibited by the color developing layer 21 is red, the thickness of the silicon dioxide layer can be It is 80-95 nm, and the thickness of the titanium trioxide layer can be 130 nm.
示例性的,一个所述显色子层21可以包括两个膜层211,两个膜层211可以分别为五氧化三钛层和二氧化硅层。例如,当显色子层21所呈现的色调为蓝色时,示例的,二氧化硅层的厚度可以为60nm-70nm,五氧化三钛层的厚度可以为15nm-25nm;示例的,二氧化硅层的厚度可以为45nm-55nm,五氧化三钛层的厚度可以为40nm-50nm;示例的,二氧化硅层的厚度可以为50nm-60nm,五氧化三钛层的厚度可以为45nm-55nm;示例的,二氧化硅层的厚度可以为55nm-65nm,五氧化三钛层的厚度可以为35nm-45nm;示例的,二氧化硅层的厚度可以为75nm-85nm,五氧化三钛层的厚度可以为40nm-50nm;示例的,二氧化硅层的厚度可以为100nm-110nm,五氧化三钛层的厚度可以为45nm-55nm;示例的,二氧化硅层的厚度可以为 410nm-430nm,五氧化三钛层的厚度可以为240nm-260nm。例如,当显色子层21所呈现的色调为黄色时,示例的,二氧化硅层的厚度可以为125-135nm,五氧化三钛层的厚度可以为85-95nm;示例地,二氧化硅层的厚度可以为120-130nm,五氧化三钛层的厚度可以为60-70nm;示例地,二氧化硅层的厚度可以为60-70nm,五氧化三钛层的厚度可以为55-65nm;示例地,二氧化硅层的厚度可以为310-330nm,五氧化三钛层的厚度可以为210-230nm。例如,当显色子层21所呈现的色调为红色时,示例的,二氧化硅层的厚度可以为145-155nm,五氧化三钛层的厚度可以为100-110nm;示例的,二氧化硅层的厚度可以为135-145nm,五氧化三钛层的厚度可以为70-80nm;示例的,二氧化硅层的厚度可以为70-80nm,五氧化三钛层的厚度可以为65-75nm;示例的,二氧化硅层的厚度可以为355-375nm,五氧化三钛层的厚度可以为240-260nm。Exemplarily, one of the color rendering sub-layers 21 may include two film layers 211, and the two film layers 211 may be a titanium trioxide layer and a silicon dioxide layer, respectively. For example, when the hue exhibited by the color developing layer 21 is blue, the thickness of the silicon dioxide layer may be 60nm-70nm, and the thickness of the titanium trioxide layer may be 15nm-25nm. The thickness of the silicon layer can be 45nm-55nm, the thickness of the titanium trioxide layer can be 40nm-50nm; for example, the thickness of the silicon dioxide layer can be 50nm-60nm, and the thickness of the titanium titanium oxide layer can be 45nm-55nm ; For example, the thickness of the silicon dioxide layer can be 55nm-65nm, the thickness of the titanium trioxide layer can be 35nm-45nm; for example, the thickness of the silicon dioxide layer can be 75nm-85nm, The thickness can be 40nm-50nm; for example, the thickness of the silicon dioxide layer can be 100nm-110nm, and the thickness of the titanium trioxide layer can be 45nm-55nm; for example, the thickness of the silicon dioxide layer can be 410nm-430nm, The thickness of the titanium trioxide layer can be 240 nm-260 nm. For example, when the hue exhibited by the color developing layer 21 is yellow, for example, the thickness of the silicon dioxide layer may be 125-135nm, and the thickness of the titanium trioxide layer may be 85-95nm. The thickness of the layer can be 120-130 nm, the thickness of the titanium trioxide layer can be 60-70 nm; for example, the thickness of the silicon dioxide layer can be 60-70 nm, and the thickness of the titanium trioxide layer can be 55-65 nm; For example, the thickness of the silicon dioxide layer may be 310-330 nm, and the thickness of the titanium trioxide layer may be 210-230 nm. For example, when the hue exhibited by the color rendering sub-layer 21 is red, the thickness of the silicon dioxide layer may be 145-155nm, and the thickness of the titanium trioxide layer may be 100-110nm. The thickness of the layer can be 135-145nm, the thickness of the titanium trioxide layer can be 70-80nm; for example, the thickness of the silicon dioxide layer can be 70-80nm, and the thickness of the titanium trioxide layer can be 65-75nm; For example, the thickness of the silicon dioxide layer may be 355-375 nm, and the thickness of the titanium trioxide layer may be 240-260 nm.
采用本申请实施例提供的方法制备得到的太阳能发电瓦用基底100的透光率可以介于50-91.5%之间,显色蓝色的太阳能发电瓦用基底100的透光率不低于85%;而且基底100的颜色一致性好,没有局部脱模现象。The light transmittance of the solar power generation tile substrate 100 prepared by the method provided in the embodiment of the present application may be between 50-91.5%, and the light transmittance of the blue-colored solar power generation tile substrate 100 is not less than 85. %; And the color consistency of the substrate 100 is good, and there is no local demolding phenomenon.
本申请实施例还提供了一种太阳能发电瓦的制备方法,所述制备方法可以包括:在如上所述的太阳能发电瓦用基底100或者如上所述的制备方法制备获得的太阳能发电瓦用基底100上,依次敷设太阳能电池芯片300和背板500,并进行封装处理,获得所述太阳能发电瓦。The embodiment of the present application further provides a method for preparing a solar power generating tile, which may include: preparing the substrate 100 for a solar power generating tile as described above or the substrate 100 for a solar power generating tile obtained by the manufacturing method described above. In the above, the solar cell chip 300 and the back plate 500 are laid in order, and the packaging process is performed to obtain the solar power generation tile.
本申请实施例提供的太阳能发电瓦的制备方法,能够获得外观为彩色的太阳能发电瓦,从而能够满足客户需求,在应用时使得建筑更具美感。The method for preparing a solar power generating tile provided in the embodiment of the present application can obtain a solar power generating tile with a colored appearance, thereby meeting customer needs and making the building more aesthetically pleasing when applied.
在太阳能发电瓦中,该太阳能电池芯片300和背板500可以敷设在该太阳能发电瓦用基底100上的任意一侧。In the solar power generation tile, the solar cell chip 300 and the back plate 500 may be laid on any side of the substrate 100 for the solar power generation tile.
示例性的,该太阳能发电瓦用基底100上可以在其任一侧设置有显色层2,该太阳能电池芯片300和背板500可以依次敷设在该基底100具有显色层2的一侧。Exemplarily, the substrate 100 for a solar power generation tile may be provided with a color developing layer 2 on either side thereof, and the solar cell chip 300 and the back plate 500 may be sequentially laid on the side of the substrate 100 having the color developing layer 2.
本公开内容是本申请实施例的原则的示例,并非对本申请作出任何形式上或实质上的限定,或将本申请限定到具体的实施方案。对本领域的技术人员而言,很显然本申请实施例的技术方案的要素、方法和系统等,可以进行 变动、改变、改动、演变,而不背离如上所述的本申请的实施例、技术方案的,如权利要求中所定义的原理、精神和范围。这些变动、改变、改动、演变的实施方案均包括在本申请的等同实施例内,这些等同实施例均包括在本申请的由权利要求界定的范围内。虽然可以许多不同形式来使本申请实施例具体化,但此处详细描述的是本申请的一些实施方案。此外,本申请的实施例包括此处所述的各种实施方案的一些或全部的任意可能的组合,也包括在本申请的由权利要求界定的范围内。在本申请中或在任一个引用的专利、引用的专利申请或其它引用的资料中任何地方所提及的所有专利、专利申请和其它引用资料据此通过引用以其整体并入。This disclosure is an example of the principles of the embodiments of the present application, and does not limit the present application in any form or substance, or limit the present application to specific implementations. It is obvious to those skilled in the art that the elements, methods, and systems of the technical solutions of the embodiments of the present application can be changed, changed, modified, and evolved without departing from the embodiments and technical solutions of the present application as described above. The principle, spirit and scope are as defined in the claims. These altered, changed, modified, and evolved implementations are all included in the equivalent embodiments of the present application, and these equivalent embodiments are included in the scope defined by the claims of the present application. Although the embodiments of the present application may be embodied in many different forms, some embodiments of the present application are described in detail herein. In addition, the examples of this application include any possible combination of some or all of the various embodiments described herein, and are also included within the scope of this application as defined by the claims. All patents, patent applications, and other cited materials mentioned in this application or anywhere in any cited patent, cited patent application, or other cited material are hereby incorporated by reference in their entirety.
以上公开内容规定为说明性的而不是穷尽性的。对于本领域技术人员来说,本说明书会暗示许多变化和可选择方案。所有这些可选择方案和变化旨在被包括在本权利要求的范围内,其中术语“包括”意思是“包括,但不限于”。The above disclosure is intended to be illustrative, not exhaustive. For those skilled in the art, this description will suggest many variations and alternatives. All of these alternatives and variations are intended to be included within the scope of the claims, where the term "including" means "including, but not limited to."
在此完成了对本申请可选择的实施方案的描述。本领域技术人员可认识到此处所述的实施方案的其它等效变换,这些等效变换也为由附于本文的权利要求所包括。This completes the description of the alternative embodiments of the present application. Those skilled in the art will recognize other equivalent transformations to the embodiments described herein, which equivalent transformations are also encompassed by the claims attached hereto.

Claims (21)

  1. 一种太阳能发电瓦用基底(100),所述基底(100)包括:A substrate (100) for a solar power generation tile, the substrate (100) comprising:
    基板(1);以及Substrate (1); and
    显色层(2),所述显色层(2)覆盖在所述基板(1)的相对两个表面中的至少一个表面上,所述显色层(2)可透光。A color-developing layer (2), the color-developing layer (2) covers at least one of two opposite surfaces of the substrate (1), and the color-developing layer (2) is transparent.
  2. 根据权利要求1所述的太阳能发电瓦用基底(100),其中,所述显色层(2)包括:一个显色子层(21),或者多个层叠设置的显色子层(21)。The substrate (100) for a solar power generation tile according to claim 1, wherein the color rendering layer (2) comprises: a color rendering sublayer (21), or a plurality of color rendering sublayers (21) arranged in a stack. .
  3. 根据权利要求2所述的太阳能发电瓦用基底(100),其中,每个所述显色子层(21)呈现相同的色调。The substrate (100) for a solar power generation tile according to claim 2, wherein each of the color rendering sub-layers (21) exhibits the same hue.
  4. 根据权利要求2所述的太阳能发电瓦用基底(100),其中,每个所述显色子层(21)包括多个膜层(211),所述多个膜层(211)层叠设置,每个所述膜层(211)由单一材料构成,且多个所述膜层(211)中至少有两个膜层(211)的材料不同。The substrate (100) for a solar power generation tile according to claim 2, wherein each of the color rendering sub-layers (21) includes a plurality of film layers (211), and the plurality of film layers (211) are stacked, Each of the film layers (211) is composed of a single material, and at least two of the plurality of film layers (211) have different materials.
  5. 根据权利要求4所述的太阳能发电瓦用基底(100),其中,每个所述显色子层(21)中的所述多个膜层(211)的折射率不同且按相同顺序依次层叠设置。The substrate (100) for a solar power generation tile according to claim 4, wherein the plurality of film layers (211) in each of the color rendering sublayers (21) have different refractive indices and are sequentially stacked in the same order. Settings.
  6. 根据权利要求4所述的太阳能发电瓦用基底(100),其中,每个所述显色子层(21)包括两个所述膜层(211),并且其中一个所述膜层(211)的折射率比另一个所述膜层(211)的折射率高至少0.5。The substrate (100) for a solar power generation tile according to claim 4, wherein each of the color rendering sublayers (21) includes two of the film layers (211), and one of the film layers (211) Has a refractive index that is at least 0.5 higher than that of the other said film layer (211).
  7. 根据权利要求4所述的太阳能发电瓦用基底(100),其中,所述膜层(211)选自二氧化硅层、五氧化三钛层、氟化镁层、硫化锌层、三氧化二铝层、二氧化钛层、三氧化二钛层、三氧化二铬层、二氧化锆层或硫酸镧层。The substrate (100) for a solar power generation tile according to claim 4, wherein the film layer (211) is selected from the group consisting of a silicon dioxide layer, a titanium trioxide layer, a magnesium fluoride layer, a zinc sulfide layer, and a dioxide An aluminum layer, a titanium dioxide layer, a titanium dioxide layer, a chromium trioxide layer, a zirconium dioxide layer, or a lanthanum sulfate layer.
  8. 根据权利要求4所述的太阳能发电瓦用基底(100),其中,每个所述显色子层(21)包括两个膜层(211),所述两个膜层(211)分别为五氧化三钛层和二氧化硅层;或者The substrate (100) for a solar power generation tile according to claim 4, wherein each of the color rendering sublayers (21) includes two film layers (211), and the two film layers (211) are five Trititanium oxide and silicon dioxide layers; or
    每个所述显色子层(21)包括两个膜层(211),所述两个膜层(211)分别为氟化镁层和硫化锌层;或者Each of the color rendering sub-layers (21) includes two film layers (211), and the two film layers (211) are a magnesium fluoride layer and a zinc sulfide layer, respectively; or
    每个所述显色子层(21)包括三个膜层(211),所述三个膜层(211)分别为五氧化三钛层、二氧化硅层和硫酸镧层。Each of the color rendering sub-layers (21) includes three film layers (211), and the three film layers (211) are a titanium trioxide layer, a silicon dioxide layer, and a lanthanum sulfate layer, respectively.
  9. 根据权利要求4-8中任一项所述的太阳能发电瓦用基底(100),其中,所述膜层(211)的厚度介于80-230nm之间,且所述显色层(2)中包括的所述膜层(211)的个数介于6-12个之间。The substrate (100) for a solar power generation tile according to any one of claims 4 to 8, wherein the thickness of the film layer (211) is between 80-230 nm, and the color developing layer (2) The number of the film layers (211) included in the film layer is between 6-12.
  10. 根据权利要求1所述的太阳能发电瓦用基底(100),其中,所述太阳能发电瓦用基底(100)的透光率介于50-91.5%之间。The substrate (100) for a solar power generation tile according to claim 1, wherein the light transmittance of the substrate (100) for a solar power generation tile is between 50 and 91.5%.
  11. 一种太阳能发电瓦,所述发电瓦包括:A solar power generation tile includes:
    太阳能电池芯片(300);以及Solar cell chip (300); and
    位于所述太阳能电池芯片(300)相对两侧的背板(500)和如权利要求1-10中任一项所述的太阳能发电瓦用基底(100)。A back plate (500) on opposite sides of the solar cell chip (300) and a substrate (100) for a solar power generation tile according to any one of claims 1-10.
  12. 一种如权利要求1-10任一项所述的太阳能发电瓦用基底(100)的制备方法,所述制备方法包括:A method for preparing a substrate (100) for a solar power generation tile according to any one of claims 1 to 10, the preparation method comprising:
    制备所述基板(1);以及Preparing the substrate (1); and
    在所述基板(1)的相对两个表面中的至少一个表面上形成所述显色层(2)。The color developing layer (2) is formed on at least one of two opposite surfaces of the substrate (1).
  13. 根据权利要求12所述的太阳能发电瓦用基底(100)的制备方法,其中,所述制备所述基板(1)的步骤,包括:将平板状基板进行热弯和冷却,获得曲面状的基板(1)。The method for preparing a substrate (100) for a solar power generation tile according to claim 12, wherein the step of preparing the substrate (1) comprises: thermally bending and cooling a flat substrate to obtain a curved substrate (1).
  14. 根据权利要求12所述的太阳能发电瓦用基底(100)的制备方法,其中,所述在所述基板(1)的相对两个表面中的至少一个表面上形成所述显色层(2)步骤,包括:采用电子束轰击法对靶材进行加热,使得所述靶材蒸发并沉积在所述基板(1)的相对两个表面中的至少一个表面上,形成所述显色层(2)。The method for preparing a substrate (100) for a solar power generation tile according to claim 12, wherein the color developing layer (2) is formed on at least one of two opposite surfaces of the substrate (1). The step comprises: heating the target material by an electron beam bombardment method, so that the target material is evaporated and deposited on at least one of two opposite surfaces of the substrate (1) to form the color developing layer (2 ).
  15. 根据权利要求14所述的太阳能发电瓦用基底(100)的制备方法,其中,所述靶材沉积到所述基板(1)上的温度为60-80℃。The method for preparing a substrate (100) for a solar power generation tile according to claim 14, wherein the temperature at which the target is deposited on the substrate (1) is 60-80 ° C.
  16. 根据权利要求14所述的太阳能发电瓦用基底(100)的制备方法,其中,形成所述显色层(2)过程中反应腔室的真空度≤10-2Pa。The method for preparing a substrate (100) for a solar power generation tile according to claim 14, wherein the vacuum degree of the reaction chamber during the formation of the color developing layer (2) is ≤10-2Pa.
  17. 根据权利要求14所述的太阳能发电瓦用基底(100)的制备方法,其中,形成所述显色层(2)之后,所述制备方法还包括:对所述显色层(2)和所述基板(1)进行加热。The method for preparing a substrate (100) for a solar power generation tile according to claim 14, wherein after the color developing layer (2) is formed, the method further comprises: applying the color developing layer (2) and the The substrate (1) is heated.
  18. 根据权利要求17所述的太阳能发电瓦用基底(100)的制备方法,其中,对所述显色层(2)和所述基板(1)进行加热的温度为200-400℃。The method for preparing a substrate (100) for a solar power generation tile according to claim 17, wherein the temperature for heating the color developing layer (2) and the substrate (1) is 200-400 ° C.
  19. 根据权利要求14所述的太阳能发电瓦用基底(100)的制备方法,其中,所述采用电子束轰击法对靶材进行加热,使得所述靶材蒸发并沉积在所述基板(1)的相对两个表面中的至少一个表面上,形成所述显色层(2)步骤之前,所述制备方法还包括:采用离子束轰击所述基板(1)的待镀膜表面,以对所述基板(1)的待镀膜表面进行清洁和粗糙化处理。The method for preparing a substrate (100) for a solar power generation tile according to claim 14, wherein the target is heated by using an electron beam bombardment method, so that the target is evaporated and deposited on the substrate (1). On at least one of the two opposite surfaces, before the step of forming the color developing layer (2), the preparation method further includes: bombarding a surface of the substrate (1) to be coated with an ion beam to blast the substrate. (1) The surface to be coated is cleaned and roughened.
  20. 根据权利要求12-19中任一项所述的太阳能发电瓦用基底(100)的制备方法,其中,所述在所述基板(1)的相对两个表面中的至少一个表面上形成所述显色层(2)步骤,包括:在所述基板(1)的相对两个表面中的至少一个表面上形成一个显色子层(21)或者多个层叠设置的显色子层(21);The method for producing a substrate (100) for a solar power generation tile according to any one of claims 12-19, wherein said forming said at least one of two opposite surfaces of said substrate (1) The color developing layer (2) step includes: forming a color developing sublayer (21) or a plurality of color developing sublayers (21) on at least one of two opposite surfaces of the substrate (1). ;
    其中,所述在所述基板(1)的相对两个表面中的至少一个表面上形成一个显色子层(21),包括:将多种不同的材料按照预定比例进行同时蒸镀,以获得一个所述显色子层(21);或者,将多种不同的材料按照预定比例依次进行蒸镀,以获得一个所述显色子层(21)。Wherein, the step of forming a color rendering sub-layer (21) on at least one of two opposite surfaces of the substrate (1) includes: simultaneously depositing a plurality of different materials according to a predetermined ratio to obtain One of the color developing sub-layers (21); or, a plurality of different materials are sequentially evaporated according to a predetermined ratio to obtain one of the color developing sub-layers (21).
  21. 一种太阳能发电瓦的制备方法,所述制备方法包括:A method for preparing a solar power generation tile, the preparation method includes:
    在如权利要求1-10中任一项所述的太阳能发电瓦用基底(100)或者如权利要求12-20中任一项所述的制备方法制备获得的太阳能发电瓦用基底(100)上,依次敷设太阳能电池芯片(300)和背板(500),并进行封装处 理,获得所述太阳能发电瓦。The substrate (100) for a solar power generation tile according to any one of claims 1 to 10 or the substrate (100) for a solar power generation tile prepared by the preparation method according to any one of claims 12 to 20. , Sequentially laying a solar cell chip (300) and a back plate (500), and performing a packaging process to obtain the solar power generation tile.
PCT/CN2019/089065 2018-06-11 2019-05-29 Solar power generation tile and base thereof, and preparation method therefor WO2019237923A1 (en)

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CN201810597953 2018-06-11
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CN201810885326.5A CN109004040A (en) 2018-06-11 2018-08-06 Solar power generation tile and substrate thereof and preparation methods of solar power generation tile and substrate

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201868444U (en) * 2010-03-05 2011-06-15 赵枫 Color solar cell
CN103346180A (en) * 2013-05-29 2013-10-09 中山大学 Color crystalline silicon solar cell module and preparation method thereof
CN105280728A (en) * 2014-06-05 2016-01-27 中国科学院苏州纳米技术与纳米仿生研究所 Color solar cell and manufacturing method thereof
CN109004040A (en) * 2018-06-11 2018-12-14 汉能移动能源控股集团有限公司 Solar power generation tile and substrate thereof and preparation methods of solar power generation tile and substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201868444U (en) * 2010-03-05 2011-06-15 赵枫 Color solar cell
CN103346180A (en) * 2013-05-29 2013-10-09 中山大学 Color crystalline silicon solar cell module and preparation method thereof
CN105280728A (en) * 2014-06-05 2016-01-27 中国科学院苏州纳米技术与纳米仿生研究所 Color solar cell and manufacturing method thereof
CN109004040A (en) * 2018-06-11 2018-12-14 汉能移动能源控股集团有限公司 Solar power generation tile and substrate thereof and preparation methods of solar power generation tile and substrate

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